JP2007304383A - Liquid crystal device, method for manufacturing the same, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a transflective liquid crystal device in which loss of display caused by a contact hole is prevented, a method for manufacturing the liquid crystal device, and electronic equipment. <P>SOLUTION: The liquid crystal device is equipped with a liquid crystal panel and a backlight 31. The liquid crystal panel is equipped with an element substrate 60, a counter substrate 70, and a liquid crystal. A transparent electrode 55A is formed on a transmissive region 50A of the element substrate 60, and the transparent electrode 55A is extended to a reflective region 50B of the element substrate 60 and is electrically connected to a pixel potential side capacitor electrode 532 which is electrically connected to a drain electrode of a TFT. A resin film 65B of a reflective section is formed on the reflective region 50B of the element substrate 60 so as to cover the section of the transparent electrode 55A which is extended to the reflective region 50B, and the pixel potential side capacitor electrode 532, and a reflection film 58 and a transparent electrode 55B are formed on the resin film 65B of the reflective section. The reflection film 58 and the transparent electrode 55B are electrically connected to the transparent electrode 55A. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a liquid crystal device, a method for manufacturing a liquid crystal device, and an electronic apparatus.

Conventionally, there is a transflective liquid crystal device that has both a transmissive display that uses illumination light such as backlight and a reflective display that uses reflected light of ambient light such as natural light and room light (for example, , See Patent Document 1).

The liquid crystal device disclosed in Patent Document 1 includes a liquid crystal panel in which a plurality of pixels each having a transmission region and a reflection region are arranged, and a backlight that supplies light to the liquid crystal panel. The liquid crystal panel includes an element substrate having a plurality of switching elements provided in a reflection region of a pixel, a counter substrate disposed to face the element substrate, and a liquid crystal provided between the element substrate and the counter substrate.

On the element substrate, an insulating film is formed over the entire surface of the element substrate covering the switching element,
On the insulating film in the transmissive region, as the pixel electrode, ITO (Indium Tin Oxide) or IZO (IZO)
A transparent electrode made of a transparent conductor such as Indium Zinc Oxide is formed, and a reflective electrode made of a highly reflective metal such as aluminum is formed as a pixel electrode on the insulating film in the reflective region.
A data line is electrically connected to one end of the switching element. The transparent electrode and the reflective electrode are electrically connected to the other end of the switching element through a contact hole provided through a part of the insulating film.

  A common electrode is formed on the counter substrate so as to face the transparent electrode and the reflective electrode.

The above-described liquid crystal device of Patent Document 1 operates as follows.
That is, when an image signal is supplied to the data line, the switching element is turned on,
Image data based on the image signal is written to the transparent electrode and the reflective electrode as pixel electrodes.
When image data is written to these pixel electrodes, a driving voltage is applied to the liquid crystal due to a potential difference between the pixel electrode and the common electrode, and the alignment and order of the liquid crystal change. Then, in the transmissive region, the light from the backlight is changed by the liquid crystal whose orientation and order are changed, and gradation display is performed.
On the other hand, in the reflective region, ambient light incident on the liquid crystal panel is reflected by the reflective electrode, and the reflected light is changed by the liquid crystal whose orientation and order are changed, so that gradation display is performed.
JP 2006-78789 A

By the way, in the region where the contact hole is formed, since no driving voltage is applied to the liquid crystal, gradation display is not performed and display loss occurs. As described above, in the liquid crystal device of Patent Document 1,
Since a contact hole is provided in order to electrically connect the switching element and the pixel electrode, display loss is caused by this contact hole.

An object of the present invention is to provide a transflective liquid crystal device capable of preventing display loss due to a contact hole, a method for manufacturing the liquid crystal device, and an electronic apparatus.

The liquid crystal device of the present invention includes a liquid crystal panel in which a plurality of pixels each having a transmission region and a reflection region are arranged, and illumination that supplies light to the liquid crystal panel, and the liquid crystal panel is provided in the reflection region of the pixels. A first substrate having a plurality of the switching elements, a second substrate provided opposite to the first substrate, and a liquid crystal sandwiched between the first substrate and the second substrate , Wherein a transparent electrode is formed in a transmission region of the first substrate, and the transparent electrode is extended to a reflection region of the first substrate to electrically connect to the switching element. And a reflection part resin film is formed in the reflection region of the first substrate so as to cover the transparent electrode of the transparent electrode extending to the reflection region and the switching element. The reflective electrode is on the resin film. Made, the reflective electrode is characterized in that the the transparent electrode electrically connected.

According to this invention, the reflective electrode is electrically connected to the switching element through the transparent electrode. For this reason, the reflective electrode can be electrically connected to the switching element without providing a contact hole in the reflective resin film. Therefore, display loss due to the contact hole can be prevented by not providing the contact hole in the reflection part resin film.

In the liquid crystal device according to the aspect of the invention, it is preferable that a transmission part resin film is formed in the transmission region of the first substrate, and the transparent electrode is formed on the transmission part resin film.

In the layer where the switching element is formed, a wiring electrically connected to the switching element is formed. For this reason, in the transmissive area | region of the 1st board | substrate, when these space | intervals are small between the above-mentioned wiring and transparent electrodes, parasitic capacitance will arise and power consumption may increase.
Therefore, according to the present invention, the transmission part resin film is formed in the transmission region of the first substrate, and the transparent electrode is formed on the transmission part resin film. That is, a transmission part resin film was formed between the above-described wiring and the transparent electrode. For this reason, the space | interval of the above-mentioned wiring and transparent electrode becomes large with the thickness of the permeation | transmission part resin film. Therefore, it is possible to suppress an increase in power consumption by suppressing the generation of parasitic capacitance between the above-described wiring and the transparent electrode.

Further, according to the present invention, the transparent electrode is formed on the transmission part resin film, the transparent electrode is extended to the reflective region of the first substrate, and the transparent electrode is extended to the reflective region of the first substrate. A reflection portion resin film was formed to cover the electrodes and the switching elements. That is, the step of forming the transparent electrode was performed between the step of forming the transmissive portion resin film and the step of forming the reflective portion resin film. For this reason, since the transmissive portion resin film and the reflective portion resin film are formed in separate steps, they can be formed of different materials.

In the liquid crystal device according to the aspect of the invention, it is preferable that the transmission part resin film is formed of a negative type resin material, and the reflection part resin film is formed of a positive type resin material.

According to the present invention, the transmission part resin film is formed of a negative type resin material. The negative resin material has a higher light transmittance than the positive resin material. For this reason, the light transmittance of the transmission part resin film can be increased, and the light loss in the transmission part resin film can be reduced.

Further, according to the present invention, the reflection portion resin film is formed of a positive type resin material. The positive type resin material is excellent in moldability as compared with the negative type resin material. For this reason, the shape of the reflection part resin film can be complicated, for example, by providing a recess on the surface of the reflection part resin film.

In the liquid crystal device according to the aspect of the invention, it is preferable that the reflective electrode includes a reflective film and a transparent electrode formed on the reflective film.

According to this invention, the reflective electrode is composed of the reflective film and the transparent electrode. For this reason, light can be reflected by the reflective film of the reflective electrode, and a driving voltage can be applied to the liquid crystal by the transparent electrode to perform reflective display in the reflective region.

An electronic apparatus according to the present invention includes the above-described liquid crystal device.
According to the present invention, there are effects similar to those described above.

A method for manufacturing a liquid crystal device according to the present invention includes: a liquid crystal panel in which a plurality of pixels each having a transmission region and a reflection region are arranged; and an illumination that supplies light to the liquid crystal panel. The liquid crystal panel reflects the pixels. Sandwiched between a first substrate having a plurality of switching elements provided in a region, a second substrate provided to face the first substrate, and the first substrate and the second substrate A liquid crystal device comprising: a liquid crystal device; and a transmission region of the first substrate,
A procedure for forming a transmission part resin film, a procedure for forming a transparent electrode on the transmission part resin film and the switching element, and a reflection area of the first substrate. A procedure for forming a reflective resin film covering the transparent electrode and the switching element, and a procedure for forming a reflective electrode on the reflective resin film and electrically connecting the previous reflective electrode to the transparent electrode And.
According to the present invention, there are effects similar to those described above.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description of embodiments and modifications, the same constituent elements are denoted by the same reference numerals, and the description thereof is omitted or simplified.
<Embodiment>
FIG. 1 is a block diagram showing a configuration of a liquid crystal device 1 according to an embodiment of the present invention.
The liquid crystal device 1 includes a liquid crystal panel AA and a backlight 31 as illumination for supplying light to the liquid crystal panel AA. The liquid crystal device 1 performs a transflective display that combines a transmissive display that uses light from the backlight 31 and a reflective display that uses reflected light of ambient light such as natural light and room light.

The liquid crystal panel AA includes a display area A having a plurality of pixels 50, and a scanning line driving circuit 11 and a data line driving circuit 21 that are provided around the display area A and drive the pixels 50.

The liquid crystal panel AA includes a plurality of scanning lines 10 and a plurality of data lines 20 and a plurality of common lines 30 that intersect the plurality of scanning lines 10 and are alternately provided at predetermined intervals. Pixels 50 are provided at intersections of the data lines 10 and the data lines 20.

The pixel 50 includes a thin film transistor (hereinafter referred to as a TFT (Thin Film) as a switching element.
51), a pixel electrode 55, and a common electrode 56 facing the pixel electrode 55.
, And a storage capacitor 53 having one end electrically connected to the pixel electrode 55 and the other end electrically connected to the common line 30.

The scanning line 10 is connected to the gate electrode of the TFT 51, and the source electrode of the TFT 51 is
The data line 20 is connected, and the drain electrode of the TFT 51 is connected to the pixel electrode 55 and the storage capacitor 53. A liquid crystal is sandwiched between the pixel electrode 55 and the common electrode 56. Therefore, the TFT 51 is turned on when a selection voltage is applied from the scanning line 10,
The data line 20, the pixel electrode 55, and the storage capacitor 53 are brought into conduction.

The scanning line driving circuit 11 sequentially supplies a selection voltage for turning on the TFT 51 to each scanning line 10. For example, when a selection voltage is supplied to a certain scanning line 10, all the TFTs 51 connected to the scanning line 10 are turned on, and all the pixels 50 related to the scanning line 10 are selected.

The data line driving circuit 21 supplies an image signal to each data line 20 and turns on the TFT 51.
Then, the image data is sequentially written to the pixel electrode 55.

The liquid crystal device 1 described above operates as follows.
That is, by sequentially supplying a selection voltage from the scanning line driving circuit 11 to the scanning line 10, all the TFTs 51 related to the certain scanning line 10 are turned on, and all the pixels 50 related to the scanning line 10 are selected. In synchronization with the selection of the pixels 50, an image signal is supplied from the data line driving circuit 21 to the data line 20. Then, all the pixels 50 selected by the scanning line driving circuit 11 are displayed.
In addition, an image signal is supplied from the data line 20 through the TFT 51 in the on state, and the image data is written into the pixel electrode 55.

When image data is written to the pixel electrode 55, a potential difference is generated between the pixel electrode 55 and the common electrode 56, and a driving voltage is applied to the liquid crystal. Therefore, by changing the voltage level of the image signal, the orientation and order of the liquid crystal are changed, and gradation display by light modulation of each pixel 50 is performed.
Note that the drive voltage applied to the liquid crystal is held by the storage capacitor 53 for a period that is three orders of magnitude longer than the period during which image data is written.

FIG. 2 is an enlarged plan view of the pixel 50 of the liquid crystal panel AA. FIG. 3 shows the liquid crystal panel AA A
It is -A sectional drawing.

As shown in FIG. 3, the liquid crystal panel AA includes an element substrate 60 as a first substrate having a plurality of TFTs 51 provided corresponding to the pixels 50 and a second substrate provided opposite to the element substrate 60. It is composed of a counter substrate 70 as a substrate and a liquid crystal sandwiched between the element substrate 60 and the counter substrate 70.

As shown in FIG. 2, in the element substrate 60, each pixel 50 includes a scanning line 10 made of two light shielding conductive materials adjacent to each other and a data line made of two light shielding conductive materials adjacent to each other. 20 is provided in a region surrounded by. That is, each pixel 50 is partitioned by the scanning line 10 and the data line 20.

Each of the pixels 50 includes a transmissive region 50A that performs transmissive display and a reflective region 5 that performs reflective display.
0B.
The pixel electrode 55 includes a transparent electrode 55A provided in the transmissive region 50A and a transparent electrode 55B provided in the reflective region 50B. These transparent electrodes 55A and 55B are made of ITO as a transparent conductor.

In the present embodiment, the TFT 51 is an inverted stagger type amorphous silicon TFT, and a region 50C (a portion surrounded by a broken line in FIG. 2) where the TFT 51 is formed is provided in the reflective region 50B.

First, the element substrate 60 will be described.
The element substrate 60 includes a glass substrate 68, and the glass substrate 6 is provided on the glass substrate 68.
A base insulating film (not shown) is formed over the entire surface in order to prevent changes in the characteristics of the TFT 51 due to surface roughness and dirt on the surface 8.

A scanning line 10 and a common line 30 made of a light-shielding conductive material are formed on the base insulating film.
The scanning line 10 is provided along the boundary between adjacent pixels 50, and protrudes toward the reflection region 50 </ b> B in the vicinity of the intersection with the data line 20 to constitute the gate electrode 511 of the TFT 51.
The common line 30 is provided along the boundary between the transmission region 50A and the reflection region 50B, and each pixel 5
0 protrudes toward the reflection region 50 </ b> B to form a common potential side capacitor electrode 531.

Further, a planarizing film 531A made of the same light-shielding conductive material as the common potential side capacitor electrode 531 is formed on the base insulating film with the same film thickness as the common potential side capacitor electrode 531. Therefore, in the reflective region 50B, the light transmittance is uniform between the region where the common potential side capacitor electrode 531 is formed and the region where the common potential side capacitor electrode 531 is not formed. Also,
In the reflective region 50B, the layer on which the common potential side capacitor electrode 531 is formed is flat.

A gate insulating film 62 is formed in the transmissive region 50A and the reflective region 50B so as to cover the scanning line 10, the common line 30, the gate electrode 511, the common potential side capacitance electrode 531 and the planarizing film 531A.

In the region 50C where the TFT 51 is formed on the gate insulating film 62, a semiconductor layer (not shown) made of amorphous silicon and an ohmic contact layer (not shown) made of N + amorphous silicon are stacked facing the gate electrode 511. Has been. A source electrode 512 and a drain electrode 513 are stacked on the ohmic contact layer, thereby forming an amorphous silicon TFT.

The drain electrode 513 constitutes the pixel potential side capacitor electrode 532 in a region excluding the region 50C where the TFT 51 is formed and the reflective region 50B on the gate insulating film 62. That is, the pixel potential side capacitor electrode 532 is electrically connected to the drain electrode 513. The pixel potential side capacitor electrode 532 is connected to the common potential side capacitor electrode 5 via the gate insulating film 62.
31. The common potential side capacitor electrode 531 and the pixel potential side capacitor electrode 532 constitute a storage capacitor 53.

The source electrode 512 is formed of the same conductive material (same layer) as the data line 20. That is, the source electrode 512 extends from the data line 20. Data line 20
Are provided so as to intersect the scanning line 10 and the common line 30.
As described above, the gate insulating film 62 is formed on the scanning line 10 and the common line 30.
On the gate insulating film 62, the data line 20 is formed. For this reason, data line 2
0 is insulated from the scanning line 10 and the common line 30 by the gate insulating film 62.

A passivation film 64 as an insulating layer is formed in the transmission region 50A and the reflection region 50B so as to cover a part of the data line 20, the source electrode 512, the drain electrode 513, and the pixel potential side capacitance electrode 532 described above. .

In the transmissive region 50A on the passivation film 64, a transmissive resin film 65A is formed.

A transparent electrode 55A is formed in the transmission region 50A on the transmission part resin film 65A. The transparent electrode 55A extends to a part of the reflective region 50B, and is electrically connected to the pixel potential side capacitor electrode 532 in a region excluding the region where the above-described passivation film 64 is formed in the pixel potential side capacitor electrode 532. It is connected.

Covering the transparent electrode 55A extending to the reflective region 50B of the transparent electrode 55A, the passivation film 64, and the region excluding the region where the transparent electrode 55A is formed in the pixel potential side capacitive electrode 532, covering the reflective region 50B is formed with a reflection portion resin film 65B.
A plurality of recesses 651 are formed on the surface of the reflection portion resin film 65B on the liquid crystal layer side.

On the reflection part resin film 65B, a reflection film 58 made of a material mainly made of aluminum and added with nickel is formed. The reflection film 58 reflects ambient light and scatters ambient light in the vicinity of the recess 651. The reflective film 58 is electrically connected to the transparent electrode 55A in the vicinity of the boundary between the transmissive region 50A and the reflective region 50B.

A transparent electrode 55B is formed on the reflective film 58. The reflective film 58 and the transparent electrode 55B described above constitute a reflective electrode.

An alignment film (not shown) made of an organic film such as a polyimide film is formed on the transparent electrodes 55A and 55B.

Next, the counter substrate 70 will be described.
The counter substrate 70 has a glass substrate 74, and a light shielding film 71 as a black matrix is formed at a position of the glass substrate 74 facing the scanning lines 10 and the data lines 20.

A color filter 72 is formed on the glass substrate 74 and the light shielding film 71. In the present embodiment, the pixels 50 adjacent in the direction connecting the transmission region 50A and the reflection region 50B have the same colored layer. On the color filter 72, a common electrode 56 made of ITO is formed opposite to the pixel electrode 55 made of transparent electrodes 55A and 55B. Common electrode 5
An alignment film (not shown) is formed on 6.

The element substrate 60 and the counter substrate 70 described above are arranged to face each other with a predetermined interval by a photo spacer 42. A liquid crystal layer is formed between the element substrate 60 and the counter substrate 70, and the liquid crystal layer is formed on the sealing material 4 formed around the element substrate 60 and the counter substrate 70.
1 (see FIG. 5).
The liquid crystal layer has a thick layer thickness in the transmissive region 50A where the transmissive portion resin film 65A is formed, and a thin layer thickness in the reflective region 50B where the reflective portion resin film 65B is formed. The optical path (distance) through which light passes through the liquid crystal layer is adjusted to be equal to 50B.

A phase difference plate and a polarizing plate (not shown) are provided on the surfaces of the element substrate 60 and the counter substrate 70.
A backlight 31 is provided at a position facing the element substrate 60.

Next, transmissive display and reflective display of the liquid crystal device 1 will be described.
The liquid crystal device 1 performs transmissive display using light from the backlight 31 in an environment with little ambient light. That is, as indicated by an arrow in FIG. 3, the light emitted from the backlight 31 is linearly polarized by a polarizing plate (not shown) provided on the element substrate 60, and the glass substrate 68,
Gate insulating film 62, passivation film 64, transmissive resin film 65 </ b> A, and transparent electrode 55
It passes through A and enters the liquid crystal layer.

The light incident on the liquid crystal layer is rotated in the polarization direction by the liquid crystal according to the applied voltage due to the potential difference between the transparent electrode 55A and the common electrode 56 in the transmission region 50A, and passes through the common electrode 56, the color filter 72, and the glass substrate 74. The polarizing plate (not shown) provided on the counter substrate 70
To reach. The light that has reached the polarizing plate is transmitted through the polarizing plate according to the amount of rotation in the polarization direction by the liquid crystal.

On the other hand, in an environment where there is sufficient ambient light, the reflective display is performed using the reflected light of the ambient light.
That is, as indicated by the arrows in FIG. 3, the ambient light is linearly polarized by a polarizing plate (not shown) provided on the counter substrate 70, passes through the glass substrate 74, the color filter 72, and the common electrode 56, Incident on the liquid crystal layer. The light incident on the liquid crystal layer passes through the transparent electrode 55B and reaches the reflection film 58. The light that reaches the reflection film 58 is reflected by the reflection film 58 and is again transmitted to the transparent electrode 5.
The light passes through 5B and enters the liquid crystal layer.

The light that has entered the liquid crystal layer again has its polarization direction rotated by the liquid crystal according to the voltage applied by the potential difference between the transparent electrode 55B and the common electrode 56 in the reflection region 50B, and again the common electrode 56, the color filter 72, and the glass substrate 74. Is transmitted through the polarizing plate provided on the counter substrate 70 (
(Not shown). The light that has reached the polarizing plate is transmitted through the polarizing plate according to the amount of rotation in the polarization direction by the liquid crystal.

FIG. 4 is a plan view of the liquid crystal panel AA.
On the element substrate 60 of the liquid crystal panel AA, a driving IC 40 made of electronic components including the scanning line driving circuit 11 and the data line driving circuit 21 is provided around the display area A. The scanning line 10 and the data line 20 described above are electrically connected to the driving IC 40.

FIG. 5 is a cross-sectional view of the liquid crystal panel AA along BB.
A sealing material 41 that seals the liquid crystal layer is provided around the element substrate 60 and the counter substrate 70.
In the peripheral portion of the element substrate 60, the above-described base insulating film (not shown) is provided on the glass substrate 68.
The scanning line 10 and the data line 20 are formed on the base insulating film. That is, the data line 20 is formed in the same layer as the scanning line 10 at the periphery of the element substrate 60. Further, a gate insulating film 62 is formed to cover the scanning lines 10 and the data lines 20,
A passivation film 64 is formed on the gate insulating film 62.

Here, in the display region A of the element substrate 60, a contact hole 622 is formed in the gate insulating film 62, and the data line 20 formed on the gate insulating film 62 is grounded through the contact hole 622. It is electrically connected to a data line 20 formed on the film.

Further, at the peripheral portion of the element substrate 60, the gate insulating film 62 and the passivation film 6 are provided.
4, a contact hole 623 is formed, and the scanning line 10 and the data line 20 formed on the base insulating film are electrically connected to the driving IC 40 through the contact hole 623.

Next, the manufacturing procedure of the element substrate 60 of the liquid crystal panel AA will be described with reference to FIGS.
) To (f).
6A to 6F show the manufacturing procedure of the display area A of the element substrate 60, and correspond to the AA cross section of the liquid crystal panel AA of FIG. 7A to 7F show the manufacturing procedure of the peripheral portion of the element substrate 60, and correspond to the BB cross section of the liquid crystal panel AA of FIG.

First, the scanning line 10, the common line 30, the gate electrode 511, the common potential side capacitance electrode 531, and the planarizing film 531 </ b> A are formed in the display area A of the element substrate 60.
Scan lines 10 and data lines 20 are formed.
That is, a metal layer is formed over the entire surface of the glass substrate 68 by sputtering.
Next, photolithography and etching are performed on the glass substrate 68 on which the metal layer is formed.

As a result, as shown in FIG. 6A, the display region A of the element substrate 60 has a glass substrate 6.
On 8, the scanning line 10 and the common line 30 are formed. Further, a gate electrode 511 is formed in the vicinity of the intersection with the data line 20 so as to protrude from the scanning line 10 toward the reflection region 50B. In each pixel 50, a common potential side capacitor electrode 531 of the storage capacitor 53 is formed so as to protrude from the common line 30 to the reflection region 50 </ b> B side. Further, in each pixel 50, the planarizing film 531 is formed in a region other than the region where the common potential side capacitor electrode 531 is formed in the reflective region 50B.
A is formed.

At the same time, as shown in FIG. 7A, the scanning lines 10 and the data lines 20 are formed on the glass substrate 68 at the periphery of the element substrate 60.

Next, the gate insulating film 62 is formed in the display area A of the element substrate 60, and the gate insulating film 62 and contact holes 622 and 623 are formed in the peripheral portion of the element substrate 60.
That is, the gate insulating film 62 is formed over the entire surface of the element substrate 60 by the CVD method. Next, photolithography and etching are performed on the glass substrate 68 on which the gate insulating film 62 is formed.

As a result, as shown in FIG. 6B, the display area A of the element substrate 60 has scanning lines 10,
A gate insulating film 62 is formed to cover the common line 30, the gate electrode 511, the common potential side capacitance electrode 531 and the planarization film 531A.

At the same time, as shown in FIG. 7B, a gate insulating film 62 is formed on the periphery of the element substrate 60 so as to cover the scanning lines 10 and the data lines 20. The gate insulating film 62 includes a contact hole 622 for electrically connecting the data line 20 formed on the base insulating film to the data line 20 formed on the gate insulating film 62, and the base insulating film The contact hole 62 for electrically connecting the scanning line 10 and the data line 20 formed on the driving IC 40 to the driving IC 40.
3 are formed.

Next, the data line 20, the source electrode 512, the drain electrode 513, and the pixel potential side capacitance electrode 532 are formed in the display area A of the element substrate 60, and the data line 20 is formed in the peripheral portion of the element substrate 60.
That is, a metal layer is formed over the entire surface of the element substrate 60 by sputtering.
Next, photolithography and etching are performed on the element substrate 60 on which the metal layer is formed.

As a result, as shown in FIG. 6C, in the display region A of the element substrate 60, the storage capacitor 53 is formed in a region other than the reflective region 50B on the gate insulating film 62 and the region 50C where the TFT 51 is formed. The pixel potential side capacitor electrode 532 is formed.
The gate electrode 51 is formed in the region 50C where the TFT 51 is formed on the gate insulating film 62.
A semiconductor layer (not shown) made of amorphous silicon and an ohmic contact layer (not shown) made of N + amorphous silicon are stacked opposite to each other. A source electrode 512 and a drain electrode 513 are stacked on the ohmic contact layer, thereby forming an amorphous silicon TFT. The source electrode 512 is formed of the same conductive material (same layer) as the data line 20.

At the same time, as shown in FIG. 7C, the data line 20 is formed on the gate insulating film 62 at the periphery of the element substrate 60. The data line 20 formed on the gate insulating film 62 is electrically connected to the data line 20 formed on the base insulating film through the contact hole 622. Further, the same conductive material as the data line 20 formed on the gate insulating film 62 is also formed in the contact hole 623.

Next, a passivation film 64 is formed in the display area A of the element substrate 60, and the element substrate 60
A passivation film 64 and a contact hole 623 are formed on the peripheral edge of each.
That is, the passivation film 64 is formed over the entire surface of the element substrate 60 by the CVD method. Next, photolithography and etching are performed on the glass substrate 68 on which the gate insulating film 62 is formed.

As a result, as shown in FIG. 6D, the data line 20 is formed in the display area A of the element substrate 60.
A passivation film 64 is formed so as to cover a part of the source electrode 512, the drain electrode 513, and the pixel potential side capacitor electrode 532.

At the same time, as shown in FIG. 7D, a passivation film 64 is formed on the periphery of the element substrate 60 so as to cover the gate insulating film 62 and the data line 20. For the passivation film 64, the scanning lines 10 and the data lines 20 formed on the base insulating film are connected to the driving IC 40.
A contact hole 623 for electrical connection is formed.

Next, the transmission part resin film 65 </ b> A and the transparent electrode 55 </ b> A are formed in the display area A of the element substrate 60, and the conduction electrode 67 is formed in the peripheral part of the element substrate 60.
That is, first, photolithography and heat treatment are performed on the passivation film 64 using a negative resin material. Next, an amorphous ITO thin film is formed over the entire surface of the element substrate 60 by sputtering. Next, the glass substrate 68 on which the amorphous ITO thin film is formed is subjected to photolithography, etching, and heat treatment to form a crystallized ITO thin film in a predetermined region.
Note that the manufacturing procedure of the transmission part resin film 65 </ b> A is not performed on the periphery of the element substrate 60.

As a result, as shown in FIG. 6E, the transmission part resin film 65 </ b> A is formed on the passivation film 64 in the display region A of the element substrate 60. Further, a transparent electrode 55A is formed on part of the transmissive portion resin film 65A and the pixel potential side capacitor electrode 532.

At the same time, as shown in FIG. 7E, a contact hole 62 is formed in the peripheral portion of the element substrate 60.
The conductive electrode 67 is formed on the same conductive material as the data line 20 formed in FIG.

Next, the reflection portion resin film 65B, the reflection film 58, and the transparent electrode 55B are formed in the display area A of the element substrate 60.
That is, first, a positive resin material is used to cover a part of the transparent electrode 55A, the passivation film 64, the drain electrode 513, and a part of the pixel potential side capacitor electrode 532,
Photolithography and heat treatment are performed. Next, the reflection part resin film 65B of the element substrate 60 is formed by sputtering using a material mainly composed of aluminum and added with nickel.
A reflective layer is formed on the substrate. Next, an amorphous ITO thin film is formed by sputtering over the entire surface of the element substrate 60 on which the reflective layer is formed. Next, the glass substrate 68 on which the amorphous ITO thin film is formed is subjected to photolithography, etching, and heat treatment to form a crystallized ITO thin film in a predetermined region.
In addition, the manufacturing procedure of the reflecting portion resin film 65 </ b> B, the reflecting layer, and the crystallized ITO thin film is not performed on the peripheral portion of the element substrate 60.

Thereby, as shown in FIG. 6F, the transparent electrode 55 is formed in the display area A of the element substrate 60.
A part of A, the passivation film 64, the drain electrode 513, and the pixel potential side capacitor electrode 5
A reflecting portion resin film 65B having a recess 651 on the surface is formed.
In addition, a reflective film 58 is formed on the reflective resin film 65B. The reflective film 58 is electrically connected to the transparent electrode 55A. Further, the transparent electrode 55B is formed on the reflective film 58.
As described above, since the planarization film 531A is formed in the same layer as the layer on which the common potential side capacitance electrode 531 is formed, the layer on which the common potential side capacitance electrode 531 is formed is flat. It has become. For this reason, the several recessed part 651 can be uniformly formed in the surface of the reflection part resin film 65B.

Further, as shown in FIG. 7F, the reflection part resin film 65B, the reflection film 58, and the transparent electrode 55B are not formed on the periphery of the element substrate 60.

According to this embodiment, there are the following effects.
(1) The transparent electrode 55B was electrically connected to the drain electrode 513 of the TFT 51 through the pixel potential side capacitor electrode 532, the transparent electrode 55A, and the reflective film 58. Therefore, the transparent electrode 55B can be electrically connected to the drain electrode 513 of the TFT 51 without providing a contact hole in the reflection part resin film 65B. Therefore, display loss due to the contact hole can be prevented by not providing the contact hole in the reflection portion resin film 65B.

(2) The transmissive part resin film 65A is formed in the transmissive region 50A of the element substrate 60, and the transparent electrode 55A is formed on the transmissive part resin film 65A. That is, the transmission part resin film 65A was formed between the scanning line 10, the data line 20, the common line 30, and the transparent electrode 55A. For this reason, the distance between the scanning line 10, the data line 20, and the common line 30 and the transparent electrode 55A is increased depending on the thickness of the transmission part resin film 65A. Therefore, the scanning line 10, the data line 20, and the common line 30
And the transparent electrode 55A can be prevented from generating parasitic capacitance, and an increase in power consumption can be suppressed.

(3) A transparent electrode 55A is formed on the transmission part resin film 65A, the transparent electrode 55A is extended to the reflection region 50B of the element substrate 60, and the transparent electrode is extended to the reflection region 50B of the element substrate 60 55A, the passivation film 64, the drain electrode 513 of the TFT 51, and the region excluding the region where the transparent electrode 55A is formed in the pixel potential side capacitance electrode 532 are covered to form the reflection portion resin film 65B. That is, the step of forming the transparent electrode 55A was performed between the step of forming the transmissive portion resin film 65A and the step of forming the reflective portion resin film 65B. For this reason, since the transmission part resin film 65A and the reflection part resin film 65B are formed in separate steps, they can be formed of different materials.

(4) The transmission part resin film 65A was formed of a negative type resin material. The negative resin material has a higher light transmittance than the positive resin material. For this reason, the light transmittance of the transmission part resin film 65A can be increased, and the light loss in the transmission part resin film 65A can be reduced.

(5) The reflective portion resin film 65B is formed of a positive type resin material. The positive type resin material is excellent in moldability as compared with the negative type resin material. Therefore, a plurality of recesses 651 can be formed on the liquid crystal layer side surface of the reflective resin film 65B.

(6) The reflective film 58 and the transparent electrode 55B constitute a reflective electrode. For this reason, light can be reflected by the reflective film 58 of the reflective electrode, and a driving voltage can be applied to the liquid crystal by the transparent electrode 55B of the reflective electrode, whereby reflective display can be performed in the reflective region 50B.

<Modification>
In addition, this invention is not limited to the above-mentioned embodiment, The deformation | transformation in the range which can achieve the objective of this invention, improvement, etc. are included in this invention.
For example, in the above-described embodiment, a TN (Twisted Nematic) liquid crystal or a liquid crystal using a negative dielectric constant may be used. The liquid crystal display mode is IPS (In-Plane Switching).
Or FFS (Fringe-Field Switching).

Moreover, as the backlight 31 in the above-mentioned embodiment, a light emitting diode (LED) is used.
Alternatively, it may be a cold cathode fluorescent tube (CCFL) or the like.

<Application example>
Next, an electronic apparatus to which the liquid crystal device 1 according to the above-described embodiment is applied will be described.
FIG. 8 is a perspective view showing a configuration of a mobile phone 3000 to which the liquid crystal device 1 is applied. The cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and the liquid crystal device 1. By operating the scroll button 3002, the screen displayed on the liquid crystal device 1 is scrolled.

Electronic devices to which the liquid crystal device 1 is applied include, in addition to those shown in FIG. 8, a personal computer, an information portable terminal, a digital still camera, a liquid crystal television, a viewfinder type, a monitor direct view type video tape recorder, and a car navigation device. , Pagers, electronic notebooks, calculators, word processors, workstations, videophones, POS terminals, devices equipped with touch panels, and the like. And the above-mentioned liquid crystal device is applicable as a display part of these various electronic devices.

It is a block diagram which shows the structure of the liquid crystal device which concerns on one Embodiment of this invention. It is an enlarged plan view of a pixel of a liquid crystal panel in the liquid crystal device. It is AA sectional drawing of the liquid crystal panel in the said liquid crystal device. It is a top view of the liquid crystal panel in the said liquid crystal device. It is BB sectional drawing of the liquid crystal panel in the said liquid crystal device. It is a figure which shows the manufacture procedure of the display area | region of the element substrate in the said liquid crystal device. It is a figure which shows the manufacture procedure of the peripheral part of the element substrate in the said liquid crystal device. It is a perspective view which shows the structure of the mobile telephone to which the above-mentioned liquid crystal device is applied.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Liquid crystal device, 10 ... Scanning line, 20 ... Data line, 30 ... Common line, 31 ... Backlight (
Illumination), 50 ... pixel, 50A ... transmission region, 50B ... reflection region, 51 ... TFT (switching element), 55A, 55B ... transparent electrode, 58 ... reflection film, 60 ... element substrate (first substrate),
65A ... Transmission part resin film, 65B ... Reflection part resin film, 651 ... Recess, 70 ... Counter substrate (second substrate), 3000 ... Mobile phone (electronic device), AA ... Liquid crystal panel.

Claims (6)

A liquid crystal panel in which a plurality of pixels having a transmissive region and a reflective region are arranged; and an illumination for supplying light to the liquid crystal panel,
The liquid crystal panel includes a first substrate having a plurality of switching elements provided in a reflection region of the pixel, a second substrate provided to face the first substrate, the first substrate, and the A liquid crystal device comprising a liquid crystal sandwiched between second substrates,
A transparent electrode is formed in the transmission region of the first substrate,
The transparent electrode extends in the reflective region of the first substrate and is electrically connected to the switching element,
In the reflective region of the first substrate, a reflective resin film is formed so as to cover the transparent electrode extending to the reflective region of the transparent electrode and the switching element,
A reflective electrode is formed on the reflective resin film,
The liquid crystal device, wherein the reflective electrode is electrically connected to the transparent electrode. The liquid crystal device according to claim 1,
In the transmission region of the first substrate, a transmission part resin film is formed,
The liquid crystal device, wherein the transparent electrode is formed on the transmission part resin film. The liquid crystal device according to claim 2,
The transmission part resin film is formed of a negative resin material,
The liquid crystal device, wherein the reflection portion resin film is formed of a positive type resin material. The liquid crystal device according to any one of claims 1 to 3,
The reflective electrode includes a reflective film and a transparent electrode formed on the reflective film.   An electronic apparatus comprising the liquid crystal device according to claim 1. A liquid crystal panel in which a plurality of pixels having a transmissive region and a reflective region are arranged; and an illumination for supplying light to the liquid crystal panel,
The liquid crystal panel includes a first substrate having a plurality of switching elements provided in a reflection region of the pixel, a second substrate provided to face the first substrate, the first substrate, and the A liquid crystal device comprising: a liquid crystal sandwiched between second substrates,
Forming a transmissive resin film in the transmissive region of the first substrate;
A procedure of forming a transparent electrode on the transmission part resin film and the switching element;
A procedure for forming a reflection part resin film on the reflective region of the first substrate so as to cover the transparent electrode of the transparent electrode formed in the reflective region and the switching element;
Forming a reflective electrode on the reflective part resin film, and electrically connecting the first reflective electrode to the transparent electrode.

Images