JP2007300145A - Active matrix electro-optic device, liquid crystal display device, video camera, and method of manufacturing these - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent an effect caused by the generation of whiskers and hillocks in a device using aluminum as wiring. <P>SOLUTION: The active matrix electro-optic device has a silicon film, a gate insulating film in contact with the silicon film, a gate electrode in contact with the gate insulating film, a silicon nitride film on the gate electrode, and a source electrode and a drain electrode electrically connected to the silicon film. The gate electrode is formed of an aluminum film or a film primarily composed of aluminum, the concentration of oxygen in the gage electrode is not higher than 8×10<SP>18</SP>atom cm<SP>-3</SP>, the concentration of carbon is not higher than 5×10<SP>18</SP>atom cm<SP>-3</SP>, and the concentration of nitrogen is not higher than 7×10<SP>17</SP>atom cm<SP>-3</SP>. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The invention disclosed in this specification relates to a semiconductor device in which electrodes and wirings are formed using aluminum or a material mainly containing aluminum. Furthermore, the present invention relates to a manufacturing method thereof.

  In recent years, an active matrix liquid crystal display device having a large-area screen has attracted attention. This active matrix type liquid crystal display device is required to have a larger area and a smaller size.

  In order to satisfy such requirements, it is necessary to use a low-resistance wiring material. This is because a delay of a signal propagating through the wiring becomes a problem when the size is 10 inches square or more.

  Aluminum is the most preferable material for the low resistance wiring material. However, when aluminum is used, there is a problem in heat resistance in the manufacturing process. (For this point, see the explanation paper described in Display and Imaging 1996 Vol.4, pp 199-206 (published by Science Communications International))

  Specifically, in the thin film transistor manufacturing process, various thin films are formed and annealed, and laser light irradiation and impurity ion implantation process cause abnormal growth of aluminum, resulting in the formation of protrusions called hillocks and whiskers. There is. These hillocks and whiskers are believed to be due to the low heat resistance of aluminum.

  The protrusions called hillocks and whiskers may reach a growth distance of 1 μm or more. Such a phenomenon causes a short circuit between the wirings.

  In order to prevent this problem, there is a technique of forming an anodic oxide film on the surface of the wiring made of aluminum. (Refer to the previous commentary)

According to the study by the present applicants, the film quality of the anodic oxide film (considered to be mainly composed of Al ₂ O ₃ ) is strong and effective in preventing the generation of hillocks and whiskers. Therefore, it has been found that it is difficult to form a contact hole for a wiring made of aluminum because of its strength.

  The invention disclosed in this specification can solve the problem of heat resistance of the wiring made of aluminum, and can solve the problem that it is difficult to form a contact that causes a problem when an anodized film is formed. The issue is to provide technology.

One of the inventions disclosed in this specification is:
Having a pattern based on aluminum or aluminum,
The concentration of oxygen atoms in the aluminum or aluminum-based film is 8 × 10 ¹⁸ cm ⁻³ or less, the concentration of carbon atoms is 5 × 10 ¹⁸ cm ⁻³ or less, and nitrogen atoms The density of this is 7 × 10 ¹⁷ cm ⁻³ or less.

  When the said structure is employ | adopted, the largest height of protrusions, such as the generated hillock and a whisker, can be 500 mm or less.

Other aspects of the invention are:
A method for manufacturing an electronic device having a pattern containing aluminum or aluminum as a main component,
The concentration of oxygen atoms in the aluminum or aluminum-based film is 8 × 10 ¹⁸ cm ⁻³ or less, the concentration of carbon atoms is 5 × 10 ¹⁸ cm ⁻³ or less, and nitrogen atoms Concentration of 7 × 10 ¹⁷ cm ⁻³ or less,
The process temperature applied to the pattern during the manufacturing process is 400 ° C. or less.

  By setting the process temperature to 400 ° C. or lower, the effect of limiting the concentration of each element of oxygen, carbon, and nitrogen can be maximized.

  By utilizing the invention disclosed in this specification, it is possible to solve the problem of heat resistance of wiring made of aluminum, and to facilitate the formation of a contact that becomes a problem when an anodized film is formed. it can.

As shown in FIG. 1B, the concentration of oxygen atoms is 8 × 10 ¹⁸ atoms / cm ³ or less, the concentration of carbon atoms is 5 × 10 ¹⁸ atoms / cm ³ or less, and the concentration of nitrogen atoms The silicon nitride film 107 is provided on the upper surface of the pattern 106 made of an aluminum film having a thickness of 7 × 10 ¹⁷ cm ⁻³ or less, and anodic oxide films (oxide films) 108 and 109 are provided on the side surfaces thereof. .

  With such a configuration, formation of protrusions such as hillocks and whiskers can be suppressed, and contacts can be easily formed.

[Example 1]
An outline (cross-sectional view) of a manufacturing process of this example is shown in FIG. In this embodiment, a manufacturing process of a thin film transistor (collectively referred to as a pixel transistor) arranged in a pixel matrix portion in an active matrix liquid crystal display is shown.

  First, as shown in FIG. 1A, a glass substrate 101 is prepared, and a base film (not shown) is formed on the surface thereof. Here, a silicon oxide film having a thickness of 3000 mm is formed by sputtering as a base film (not shown).

  This base film has a function to alleviate the influence of diffusion of impurities from the glass substrate and minute irregularities on the surface of the glass substrate. Here, an example using a glass substrate is shown, but a quartz substrate can also be used.

  After the base film is formed on the glass substrate 101, an amorphous silicon film (not shown) which is the starting film of the semiconductor film (which constitutes the active layer) that constitutes the active layer 102 of the thin film transistor is then formed by plasma CVD. To form a film having a thickness of 500 mm.

  After the amorphous silicon film is formed, laser light irradiation is performed to obtain a crystalline silicon film (not shown). Next, the crystalline silicon film is patterned to form an active layer pattern 102.

  Further, a silicon oxide film 103 functioning as a gate insulating film is formed to a thickness of 1000 mm by plasma CVD.

  After the silicon oxide film 103 is formed, the aluminum film 104 is formed to a thickness of 4000 mm by sputtering. In this way, the state shown in FIG.

  Here, 0.18% by weight of scandium is contained in the aluminum film.

  The reason why scandium is contained in the aluminum film is to suppress the generation of hillocks and whiskers in the subsequent process. Scandium is effective in suppressing the generation of hillocks and whiskers because it has the effect of suppressing abnormal growth of aluminum.

  Next, by patterning the laminated film of the aluminum film 104 and the silicon nitride film 105, an aluminum pattern indicated by 106 is obtained. Reference numeral 107 denotes a silicon nitride film remaining on the gate electrode 106.

  This aluminum pattern 106 becomes a gate electrode. A gate line extends from the gate electrode 106.

  In the pixel matrix portion, gate lines extending from the gate electrode 106 are arranged in a lattice pattern together with the source lines.

  Next, anodic oxidation is performed using the gate electrode 106 as an anode, thereby forming anodic oxide films 108 and 109 on the side surface where the aluminum material is exposed. The thickness of these anodized films is 500 mm.

  In this anodizing step, an electrolytic solution obtained by neutralizing an ethylene glycol solution containing 3% tartaric acid with aqueous ammonia is used. In this electrolytic solution, platinum is used as a cathode and an aluminum film is used as an anode, and an anodic oxide film is formed by passing a current between both electrodes.

  The anodic oxide film 105 formed in this step has a dense and strong film quality. The film thickness in this anodic oxidation process can be controlled by the applied voltage.

  In the above process, since the electrolytic solution contacts only the side surface of the gate electrode 106, an anodic oxide film is not formed on the upper surface. In this way, the state shown in FIG.

  Next, the source region 110, the channel region 111, and the drain region 112 are formed by doping P (phosphorus). Here, a plasma doping method is used as a doping means. In this way, the state shown in FIG.

  Note that an example in which P is doped in order to fabricate an N-channel thin film transistor is shown; however, if a P-channel thin film transistor is fabricated, B (boron) doping is performed.

  In the doping step, the sample is heated or inevitably heated, but it is important to make the sample temperature 400 ° C. or less from the viewpoint of heat resistance of aluminum. When the sample temperature exceeds 400 ° C., hillocks (and whiskers (both distinctions are not strict)) are manifested, so care must be taken.

  After completion of the doping step, laser light irradiation is performed to simultaneously activate the dopant and activate the doped region.

  Next, as a first interlayer insulating film, a silicon nitride film 113 is formed to a thickness of 2000 mm by plasma CVD. (See Fig. 2 (A))

  Further, a film 114 made of polyimide is formed as a second interlayer insulating film by a spin coating method. When polyimide is used as the interlayer insulating film, the surface can be made flat.

  Then, contact holes 115 and 116 for the source and drain regions are formed. In this way, the state shown in FIG.

  Further, a stacked film of a titanium film, an aluminum film, and a titanium film is formed by a sputtering method, and is patterned to form the source electrode 117 and the drain electrode 118. In this way, the state shown in FIG.

  Further, a third interlayer insulating film 119 is formed with polyimide. Then, a contact hole for the drain electrode 118 is formed, and a pixel electrode 120 made of ITO is formed. In this way, the state shown in FIG.

  Finally, heat treatment in a hydrogen atmosphere is performed to compensate for defects in the active layer and complete the thin film transistor.

[Example 2]
This embodiment is performed at the same time as the manufacturing process shown in Embodiment 1, and shows a manufacturing process of a thin film transistor disposed in a peripheral driver circuit formed around the pixel matrix portion. This embodiment also shows a process for manufacturing an N-channel thin film transistor.

  The manufacturing process of the thin film transistor shown in this embodiment is the same as that shown in Embodiment 1 up to the step shown in FIG. (Of course, there are differences in wiring patterns and active layer pattern dimensions)

  First, according to the process shown in Example 1, the state shown in FIG. Next, as shown in FIG. 3A, a silicon nitride film 113 is formed as a first interlayer insulating film.

  Further, a layer 114 made of polyimide is formed as a second interlayer insulating film. Next, contact holes 301, 302, and 303 are formed.

  At this time, since the anodic oxide film is not formed on the upper surface of the gate electrode 106 (a silicon nitride film is formed), the contact hole indicated by 302 can be easily formed.

  In the structure shown in this embodiment, contact holes indicated by 301, 302, and 303 are simultaneously formed by using a dry etching method. In this way, the state shown in FIG.

  Next, a three-layer film including a titanium film, an aluminum film, and a titanium film is formed by a sputtering method. Furthermore, the source electrode 304, the gate extraction electrode 305, and the drain electrode 306 are formed by patterning this. In this way, the state shown in FIG.

  Thereafter, a hydrogenation step is performed in the same manner as in Example 1 to complete the thin film transistor.

  Here, a process for manufacturing an N-channel thin film transistor is shown. In general, the peripheral driver circuit includes an N-channel thin film transistor and a P-channel thin film transistor that are configured in a complementary manner.

Example 3
This embodiment shows a manufacturing process of a thin film transistor in which a resistance impurity region is disposed between a channel region and a drain region.

  4 and 5 show a manufacturing process of the thin film transistor of this embodiment. First, a base film (not shown) is formed on the glass substrate 401. Further, an amorphous silicon film is formed and crystallized by laser light irradiation. A crystalline silicon film is thus obtained.

  Next, the obtained crystalline silicon film is patterned to form an active layer of a thin film transistor indicated by 402.

  Further, a silicon oxide film 403 that functions as a gate insulating film is formed. After the silicon oxide film 403 is formed, an aluminum film 404 is formed.

  Next, a silicon nitride film 405 is formed over the aluminum film. In this way, the state shown in FIG.

  After obtaining the state shown in FIG. 4A, patterning is performed to obtain an aluminum pattern indicated by 406. This aluminum pattern becomes a base pattern of a gate electrode to be formed later.

  Here, 407 is the remaining silicon nitride film pattern. In this way, the state shown in FIG.

  In this state, anodization using the aluminum pattern 406 as an anode is performed to form anodized films 409 and 410.

  Here, a 3% oxalic acid aqueous solution is used as the electrolytic solution. The anodized film formed in this step has a porous shape (porous shape). The growth distance of this anodic oxide film can be several μm. This growth distance can be controlled by the anodic oxidation time. In this way, the state shown in FIG.

  In this state, the remaining pattern indicated by 408 becomes the gate electrode.

  Next, anodic oxidation is performed again. Here, anodic oxidation is performed under the conditions for forming an anodic oxide film having a dense film quality shown in the first embodiment. In this way, formation of an anodized film having a dense film quality indicated by 411 and 412 in FIG. 5A is performed.

  Here, the thickness of the anodic oxide films 411 and 412 having the dense film quality is set to 500 mm. This anodic oxide film having a dense film quality is selectively formed on the side surface of the gate electrode 408. This is because the silicon nitride film 407 exists on the upper surface of the gate electrode 408. Further, since the electrolytic solution penetrates into the porous anodic oxide films 409 and 410, an anodic oxide film having a dense film quality is formed in the state shown by 411 and 412. In this way, the state shown in FIG.

  Next, doping of P is performed. Here, P is doped by plasma doping. By performing this doping, a source region 413, an I-type region 414, and a drain region 415 are formed in a self-aligned manner as shown in FIG.

  Next, the porous anodic oxide films 409 and 410 are selectively removed. In this step, as shown in FIG. 5C, part of the silicon nitride film 407 existing on the anodic oxide films 409 and 410 to be removed is also removed.

  Then, doping of P is performed again. In this step, P is doped with a lower dose than the conditions in the previous doping step. In this step, the low concentration impurity regions 416 and 418 are formed in a self-aligned manner. A channel formation region 417 is formed in a self-aligned manner.

  The low-concentration impurity regions 416 and 418 have a lower concentration of P (phosphorus) element contained therein than the source region 413 and the drain region 415.

  In general, the low concentration impurity region on the drain region side indicated by 418 is called an LDD (lightly doped drain) region.

  When the state shown in FIG. 5C is obtained, laser light irradiation is performed to anneal the doped region.

  In the structure shown in this embodiment, the upper surface of the gate electrode (and the gate line extending therefrom) is covered with a silicon nitride film, and the side surface thereof is covered with an anodic oxide film having a dense film quality.

  With such a structure, generation of hillocks and whiskers on the surface of the gate electrode can be suppressed in the impurity doping process and the laser light irradiation process.

  Further, it is possible to provide a structure that facilitates the formation of a contact with the gate electrode (or gate line).

Example 4
This embodiment relates to a thin film transistor having a structure called a bottom gate type in which a gate electrode is between an active layer and a substrate.

  6 and 7 show a manufacturing process of this example. First, an aluminum film 602 is formed to a thickness of 3000 mm on a glass substrate indicated by 601 by sputtering. This aluminum film will later constitute a gate electrode.

  After the aluminum film 602 is formed, a silicon nitride film 603 is formed thereon by a plasma CVD method to a thickness of 500 mm. In this way, the state shown in FIG.

  Next, gate electrode 604 is obtained by performing patterning. Reference numeral 605 denotes a silicon nitride film remaining on the gate electrode 604. In this way, the state shown in FIG.

  Next, anodic oxidation using the gate electrode 604 as an anode is performed to form a dense anodic oxide film 606 and 607 having a thickness of 500 mm.

  In this step, an anodic oxide film is formed only on the side surface of the gate electrode 604 due to the presence of the silicon nitride film 605. In this way, the state shown in FIG.

  Next, a silicon oxide film 608 functioning as a gate insulating film is formed to a thickness of 1000 mm by plasma CVD. Further, an amorphous silicon film (not shown) for forming the active layer is formed to a thickness of 500 mm by plasma CVD. The amorphous silicon film is irradiated with laser light to obtain a crystalline silicon film (not shown).

  When a crystalline silicon film (not shown) is obtained, an active layer pattern including regions indicated by 609, 610, and 611 is formed by patterning the film.

  Then, exposure is performed from the back side of the substrate 601 using the gate electrode 604 as a mask, thereby forming a resist mask indicated by 612. (Refer to FIG. 6 (D))

  In this state, P is doped by plasma doping. In this doping step, the source region 609, the drain region 611, and the channel region 610 are formed in a self-aligned manner. In this way, the state shown in FIG.

  After completion of the doping step, laser light irradiation is performed to activate the doped element and anneal the doped region.

  Next, a silicon nitride film is formed as a first interlayer insulating film 612 to a thickness of 2000 mm by plasma CVD, and a second interlayer insulating film 613 is formed from polyimide. In this way, the state shown in FIG.

  Next, contact holes are formed, and a source electrode 614 and a drain electrode 615 are formed. Finally, hydrogenation is performed.

  Although not shown, a contact hole is formed in an upper portion of the wiring extending from the gate electrode 604 in another portion, and a contact to the gate electrode 604 is formed. In this way, the state shown in FIG.

  Also in the configuration shown in the present embodiment, the formation of hillocks and whiskers is prevented by forming the anodic oxide film on the side surface of the gate electrode 604, and the silicon nitride film is formed on the upper surface thereof. Occurrence of hillocks and whiskers is prevented. Since the silicon nitride film is formed on the upper surface of the gate electrode, the contact hole can be easily formed.

Example 5
In this embodiment, the relationship between the concentration of impurities in the aluminum film containing 0.18% by weight of scandium and hillocks generated is shown. Table 1 shows the hillock height when the surface of the 3000-thick aluminum film formed by sputtering is subjected to heat treatment in a hydrogen atmosphere at 350 ° C. for 1 hour, and the surface is observed. This is the relationship with the impurity concentration in the film.

  In Table 1, the difference in impurity concentration in the film between the samples reflects differences due to the time for evacuation during sputtering, the presence or absence of cleaning of the chamber of the sputtering apparatus, the maintenance of the exhaust pump, and the like.

  Here, the height of the hillock was examined by cross-sectional SEM (scanning electron microscope) observation and AFM (atomic force microscope) observation. The impurity concentration is the maximum value determined by SIMS (secondary ion analysis method).

  As apparent from Table 1, the generation of hillocks can be suppressed by reducing the concentration of oxygen (O), carbon (C), and nitrogen (N) in the film.

  Considering the film thickness of the interlayer insulating film and the like, if the hillock height is 500 mm or less, its existence can be allowed practically.

From Table 1, as conditions for satisfying this value, the oxygen concentration is 7 × 10 ¹⁸ cm ⁻³ or less, the carbon concentration is 5 × 10 ¹⁸ cm ⁻³ or less, and the nitrogen concentration is 7 × 10 ¹⁷ cm. It is concluded that it should be ^-3 or less.

  It should be noted that SIMS (secondary ion analysis method) may measure a value different from the actual value near the interface of the film.

[Explanation of the device]
An apparatus used when carrying out the invention disclosed in this specification will be described. FIG. 8 shows an outline of the apparatus. The apparatus shown in FIG. 8 has a multi-chamber type in which a plurality of processes can be continuously performed without exposing the sample to the atmosphere. Each chamber is provided with a necessary exhaust device and has a structure capable of maintaining airtightness.

  In the apparatus shown in FIG. 8, 804 is a substrate carry-in chamber and 805 is a substrate carry-out chamber. A plurality of substrates (samples) stored in the cassette 815 are carried into the substrate carry-in chamber 804 from the outside for each cassette. The processed substrate is stored in the cassette 816, and the cassette 816 is taken out to the outside when a predetermined number of processes are completed.

  Reference numeral 801 denotes a substrate transfer chamber, which has a function of transferring the substrate 800 to a required chamber by the robot arm 814.

  Reference numeral 803 denotes a chamber having a sputtering function for depositing aluminum. A cryopump is disposed in this chamber, and the impurity concentration in the aluminum film to be formed is set to a predetermined value or less.

  Reference numeral 802 denotes a sputtering apparatus for forming a germanium film (or tin film) that is used to realize good electrical contact when forming a contact. A cryopump is also provided in this chamber so that impurities can be prevented as much as possible.

  Reference numeral 807 denotes a chamber for performing heat treatment. Here, it has a function of heating by lamp irradiation.

  Reference numeral 806 denotes a chamber having a function for performing plasma CVD for forming a silicon nitride film.

  Between the transfer chamber 801 and peripheral chambers for performing each process, gate valves (opening / closing type partition walls or partitions) indicated by 810, 809, 808, 813, 812, 811 are arranged. .

  An example of the operation of operating the apparatus shown in FIG. Here, a process of continuously forming an aluminum film, a germanium film, heat treatment, and a silicon nitride film is shown.

  In the following, all except the gate valve through which the sample passes shall be closed. First, a substrate (sample) on which an aluminum film is to be formed is stored in a plurality of cassettes 815 and carried into a substrate carry-in chamber 804. Next, one substrate is transferred to the chamber 803 by the robot arm 814.

  When film formation of the aluminum film is completed in the chamber 803, the substrate is transferred to the chamber 806, and a silicon nitride film is formed. And a board | substrate is accommodated in the cassette 816 of the board | substrate carry-out chamber 805, and a series of processes are complete | finished.

  Further, when a contact aluminum film is formed after the contact hole is formed, a germanium film is formed in the chamber 802 after the aluminum film is formed in the chamber 803, and further, heat treatment is performed in the heating chamber 807. Annealing is performed to form a contact called reflow.

  Reflow is the part where aluminum and germanium are in contact, the melting point decreases, and germanium diffuses into the aluminum film by heat treatment, making electrical contact with the electrode that is in contact with aluminum (exposed at the bottom of the contact hole) It has the effect | action which makes it favorable.

Example 6
This embodiment shows an example in which plasma oxidation is used instead of anodic oxidation as a method for forming a metal oxide film on the surface of aluminum. Plasma oxidation can be formed by performing high frequency discharge in an oxidizing reduced pressure atmosphere.

Example 7
The invention disclosed in this specification can be applied to an electro-optical device having an active matrix structure. Examples of the electro-optical device include a liquid crystal display device, an EL (electroluminescence) display device, and an EC (electrochromic) display device.

  Application products include TV cameras, personal computers, car navigation systems, TV projections, video cameras, and the like. A brief description of these applications will be given with reference to FIG.

  FIG. 9A illustrates a TV camera, which includes a main body 2001, a camera portion 2002, a display device 2003, and operation switches 2004. The display device 2003 is used as a viewfinder.

  FIG. 9B illustrates a personal computer which includes a main body 2101, a cover portion 2102, a keyboard 2103, and a display device 2104. The display device 2104 is used as a monitor, and is required to have a size of a dozen inches diagonal.

  FIG. 9C illustrates car navigation, which includes a main body 2201, a display device 2202, operation switches 2203, and an antenna 2204. Although the display device 2202 is used as a monitor, it can be said that the allowable range of resolution is relatively wide because the main purpose is to display a map.

  FIG. 9D illustrates a TV projection, which includes a main body 2301, a light source 2302, a display device 2303, mirrors 2304 and 2305, and a screen 2306. Since the image displayed on the display device 2303 is projected on the screen 2306, the display device 2303 is required to have a high resolution.

  FIG. 9E illustrates a video camera, which includes a main body 2401, a display device 2402, an eyepiece 2403, operation switches 2404, and a tape holder 2405. Since the photographed image displayed on the display device 2402 can be viewed in real time through the eyepiece 2403, the user can photograph while viewing the image.

10A and 10B illustrate a manufacturing process of a thin film transistor. 10A and 10B illustrate a manufacturing process of a thin film transistor. 10A and 10B illustrate a manufacturing process of a thin film transistor. 10A and 10B illustrate a manufacturing process of a thin film transistor. 10A and 10B illustrate a manufacturing process of a thin film transistor. 10A and 10B illustrate a manufacturing process of a thin film transistor. 10A and 10B illustrate a manufacturing process of a thin film transistor. The figure which shows the outline | summary of the film-forming apparatus. The figure which shows the outline | summary of the apparatus using a liquid crystal panel.

Explanation of symbols

101 glass substrate 102 active layer (crystalline silicon film)
103 Gate insulating film (silicon oxide film)
104 Aluminum film 105 Silicon nitride film 106 Gate electrode 107 Remaining silicon nitride film 108 Anodized film 109 Anodized film 110 Source region 111 Channel region 112 Drain region 113 First interlayer insulating film (silicon nitride film)
114 Second interlayer insulating film (layer made of polyimide)
115 Contact hole to source region 116 Contact hole to drain region 117 Source electrode 118 Drain electrode 119 Third interlayer insulating film (layer made of polyimide)
120 Pixel electrode (ITO electrode)

Claims (12)

A silicon film;
A gate insulating film in contact with the silicon film;
A gate electrode in contact with the gate insulating film;
A silicon nitride film on the gate electrode;
A source electrode and a drain electrode electrically connected to the silicon film;
The gate electrode is made of an aluminum film or a film mainly composed of aluminum,
The oxygen concentration in the gate electrode is 8 × 10 ¹⁸ cm ⁻³ or less, the carbon concentration is 5 × 10 ¹⁸ cm ⁻³ or less, and the nitrogen concentration is 7 × 10 ¹⁷ cm ⁻³ or less. An active matrix type electro-optical device. A silicon film;
A gate insulating film in contact with the silicon film;
A gate electrode in contact with the gate insulating film;
A silicon nitride film on the gate electrode;
A source electrode and a drain electrode electrically connected to the silicon film;
The gate electrode is made of an aluminum film or a film mainly composed of aluminum,
Said oxygen concentration in the gate electrode is not more than 8 × ^{10 18} atoms ^{cm -3,} and a carbon concentration of 5 × ^{10 18} atoms ^{cm -3} or less, the nitrogen concentration is 7 × ^{10 17} atoms ^{cm -3} or less A liquid crystal display device. A silicon film;
A gate insulating film in contact with the silicon film;
A gate electrode in contact with the gate insulating film;
A silicon nitride film on the gate electrode;
A source electrode and a drain electrode electrically connected to the silicon film;
The gate electrode is made of an aluminum film or a film mainly composed of aluminum,
The oxygen concentration in the gate electrode is 8 × 10 ¹⁸ cm ⁻³ or less, the carbon concentration is 5 × 10 ¹⁸ cm ⁻³ or less, and the nitrogen concentration is 7 × 10 ¹⁷ cm ⁻³ or less. Features a video camera. A gate electrode,
A first insulating film made of a silicon nitride film provided on the gate electrode;
A second insulating film made of a silicon oxide film provided on the first insulating film;
A silicon film provided on the gate electrode via the first insulating film and the second insulating film;
A source electrode and a drain electrode electrically connected to the silicon film;
The gate electrode is made of an aluminum film or a film mainly composed of aluminum,
The oxygen concentration in the gate electrode is 8 × 10 ¹⁸ cm ⁻³ or less, the carbon concentration is 5 × 10 ¹⁸ cm ⁻³ or less, and the nitrogen concentration is 7 × 10 ¹⁷ cm ⁻³ or less. An active matrix type electro-optical device. A gate electrode,
A first insulating film made of a silicon nitride film provided on the gate electrode;
A second insulating film made of a silicon oxide film provided on the first insulating film;
A silicon film provided on the gate electrode via the first insulating film and the second insulating film;
A source electrode and a drain electrode electrically connected to the silicon film;
The gate electrode is made of an aluminum film or a film mainly composed of aluminum,
The oxygen concentration in the gate electrode is 8 × 10 ¹⁸ cm ⁻³ or less, the carbon concentration is 5 × 10 ¹⁸ cm ⁻³ or less, and the nitrogen concentration is 7 × 10 ¹⁷ cm ⁻³ or less. A liquid crystal display device. A gate electrode,
A first insulating film made of a silicon nitride film provided on the gate electrode;
A second insulating film made of a silicon oxide film provided on the first insulating film;
A silicon film provided on the gate electrode via the first insulating film and the second insulating film;
A source electrode and a drain electrode electrically connected to the silicon film;
The gate electrode is made of an aluminum film or a film mainly composed of aluminum,
The oxygen concentration in the gate electrode is 8 × 10 ¹⁸ cm ⁻³ or less, the carbon concentration is 5 × 10 ¹⁸ cm ⁻³ or less, and the nitrogen concentration is 7 × 10 ¹⁷ cm ⁻³ or less. Features a video camera. A silicon film;
A gate insulating film in contact with the silicon film;
A gate electrode in contact with the gate insulating film;
A silicon nitride film on the gate electrode;
A source electrode and a drain electrode electrically connected to the silicon film;
The gate electrode is made of an aluminum film or a film mainly composed of aluminum,
The oxygen concentration in the gate electrode is 8 × 10 ¹⁸ cm ⁻³ or less, the carbon concentration is 5 × 10 ¹⁸ cm ⁻³ or less, and the nitrogen concentration is 7 × 10 ¹⁷ cm ⁻³ or less.
The method for manufacturing an active matrix electro-optical device, wherein the aluminum film or the film containing aluminum as a main component and the silicon nitride film are continuously formed using a multi-chamber apparatus. A silicon film;
A gate insulating film in contact with the silicon film;
A gate electrode in contact with the gate insulating film;
A silicon nitride film on the gate electrode;
A source electrode and a drain electrode electrically connected to the silicon film;
The gate electrode is made of an aluminum film or a film mainly composed of aluminum,
The oxygen concentration in the gate electrode is 8 × 10 ¹⁸ cm ⁻³ or less, the carbon concentration is 5 × 10 ¹⁸ cm ⁻³ or less, and the nitrogen concentration is 7 × 10 ¹⁷ cm ⁻³ or less.
The method for manufacturing a liquid crystal display device, wherein the aluminum film or the film containing aluminum as a main component and the silicon nitride film are continuously formed using a multi-chamber apparatus. A silicon film;
A gate insulating film in contact with the silicon film;
A gate electrode in contact with the gate insulating film;
A silicon nitride film on the gate electrode;
A source electrode and a drain electrode electrically connected to the silicon film;
The gate electrode is made of an aluminum film or a film mainly composed of aluminum,
The oxygen concentration in the gate electrode is 8 × 10 ¹⁸ cm ⁻³ or less, the carbon concentration is 5 × 10 ¹⁸ cm ⁻³ or less, and the nitrogen concentration is 7 × 10 ¹⁷ cm ⁻³ or less.
The method for manufacturing a video camera, wherein the aluminum film or the film containing aluminum as a main component and the silicon nitride film are successively formed using a multi-chamber apparatus. A gate electrode,
A first insulating film made of a silicon nitride film provided on the gate electrode;
A second insulating film made of a silicon oxide film provided on the first insulating film;
A silicon film provided on the gate electrode via the first insulating film and the second insulating film;
A source electrode and a drain electrode electrically connected to the silicon film;
The gate electrode is made of an aluminum film or a film mainly composed of aluminum,
The oxygen concentration in the gate electrode is 8 × 10 ¹⁸ cm ⁻³ or less, the carbon concentration is 5 × 10 ¹⁸ cm ⁻³ or less, and the nitrogen concentration is 7 × 10 ¹⁷ cm ⁻³ or less.
The method for manufacturing an active matrix electro-optical device, wherein the aluminum film or the film containing aluminum as a main component and the first insulating film are continuously formed using a multi-chamber apparatus. A gate electrode,
A first insulating film made of a silicon nitride film provided on the gate electrode;
A second insulating film made of a silicon oxide film provided on the first insulating film;
A silicon film provided on the gate electrode via the first insulating film and the second insulating film;
A source electrode and a drain electrode electrically connected to the silicon film;
The gate electrode is made of an aluminum film or a film mainly composed of aluminum,
The oxygen concentration in the gate electrode is 8 × 10 ¹⁸ cm ⁻³ or less, the carbon concentration is 5 × 10 ¹⁸ cm ⁻³ or less, and the nitrogen concentration is 7 × 10 ¹⁷ cm ⁻³ or less.
The method for manufacturing a liquid crystal display device, wherein the aluminum film or the film containing aluminum as a main component and the first insulating film are successively formed using a multi-chamber apparatus. A gate electrode,
A first insulating film made of a silicon nitride film provided on the gate electrode;
A second insulating film made of a silicon oxide film provided on the first insulating film;
A silicon film provided on the gate electrode via the first insulating film and the second insulating film;
A source electrode and a drain electrode electrically connected to the silicon film;
The gate electrode is made of an aluminum film or a film mainly composed of aluminum,
The oxygen concentration in the gate electrode is 8 × 10 ¹⁸ cm ⁻³ or less, the carbon concentration is 5 × 10 ¹⁸ cm ⁻³ or less, and the nitrogen concentration is 7 × 10 ¹⁷ cm ⁻³ or less.
The method for manufacturing a video camera, wherein the aluminum film or the film containing aluminum as a main component and the first insulating film are successively formed using a multi-chamber apparatus.

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