JP2007299905A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2007299905A
JP2007299905A JP2006126157A JP2006126157A JP2007299905A JP 2007299905 A JP2007299905 A JP 2007299905A JP 2006126157 A JP2006126157 A JP 2006126157A JP 2006126157 A JP2006126157 A JP 2006126157A JP 2007299905 A JP2007299905 A JP 2007299905A
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emitting element
light emitting
semiconductor device
light
epoxy resin
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Inventor
Yasuo Fujikawa
康夫 藤川
Shingo Omura
新吾 大村
Hideaki Takeda
英明 竹田
Takahiro Oyu
孝寛 大湯
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Priority to JP2006126157A priority Critical patent/JP2007299905A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device 100 which can increase a life inexpensively. <P>SOLUTION: A semiconductor device 100 comprises a light emitting element 110, a placement member 120 on which the light emitting element 110 is disposed, a seal 130 joined to the placement member 120 to seal the light emitting element 110 and to transmit light emitted from the element 110 through the seal, a resin 140 provided between the placement member 120 and the seal 130 to join them, and an adsorbent 150 provided in a space surrounded by the placement member 120 and the seal 130. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体装置に関する。   The present invention relates to a semiconductor device.

発光ダイオードやレーザダイオードを備えた半導体装置においては、発光ダイオードやレーザダイオードなどの素子が何らかの部材により封止されることがあるが、従来、素子あるいは部品をキャンパッケージする際の真空封止方法として、次のような方法が提案された（特許文献１参照）。すなわち、素子もしくは部品を金属性のキャップでパッケージするキャンパッケージの真空封止方法において、メタルガスケットをシュテムとキャップとの間にはさんで、真空状態にしたチャンバ内で冷間圧接を行うことにより、真空に封止するようにする方法である。
特開平７−１２２６６７号公報 In a semiconductor device including a light emitting diode or a laser diode, an element such as a light emitting diode or a laser diode may be sealed by some member. Conventionally, as a vacuum sealing method when an element or a component is can packaged The following method has been proposed (see Patent Document 1). In other words, in a can package vacuum sealing method in which an element or component is packaged with a metallic cap, a metal gasket is sandwiched between the stem and the cap, and cold welding is performed in a vacuum chamber. This is a method of sealing in a vacuum.
JP-A-7-122667

しかしながら、近年は、素子や部品の低コスト化が進展しており、真空封止するしないにかかわらず、簡易な製造工程により、より安価に封止された装置が求められている。もっとも、より安価に封止された装置であっても、その寿命は向上させる必要がある。
そこで、本発明は、安価でありながらも、寿命の向上を図ることが可能な半導体装置を提供することを目的とする。 However, in recent years, the cost reduction of elements and components has progressed, and there is a demand for a device that is sealed at a lower cost by a simple manufacturing process regardless of whether or not vacuum sealing is performed. However, even if the device is sealed at a lower cost, its life needs to be improved.
In view of the above, an object of the present invention is to provide a semiconductor device capable of improving the life while being inexpensive.

本発明によれば、上記課題は、次の手段により解決される。   According to the present invention, the above problem is solved by the following means.

本発明は、発光素子と、前記発光素子が配置される配置部と、前記配置部と接合され、前記発光素子を封止し、前記発光素子から発せられる光を透過する封止部と、前記配置部と前記封止部とを接合する樹脂と、前記配置部と前記封止部とで囲まれた空間に設けられた吸着剤と、を備えた半導体装置である。
なお、封止部には、その名称の如何を問わず、発光素子を封止する機能を果たす全ての部材が含まれる。 The present invention includes a light emitting element, an arrangement part in which the light emitting element is arranged, a sealing part that is joined to the arrangement part, seals the light emitting element, and transmits light emitted from the light emitting element, A semiconductor device comprising: a resin that joins an arrangement portion and the sealing portion; and an adsorbent provided in a space surrounded by the arrangement portion and the sealing portion.
Note that the sealing portion includes all members that perform the function of sealing the light emitting element regardless of the name.

前記吸着剤の孔径は、前記樹脂から生じるガスを構成する分子の径よりも大きいことが好ましい。
前記吸着剤は、ゼオライトであることが好ましい。 It is preferable that the pore diameter of the adsorbent is larger than the diameter of molecules constituting the gas generated from the resin.
The adsorbent is preferably zeolite.

本発明は、発光素子と、前記発光素子が配置される配置部と、前記配置部と接合され、前記発光素子を封止し、前記発光素子から発せられる光を透過する封止部と、前記配置部と前記封止部とを接合する、芳香族エポキシ樹脂が含まれていない脂環式エポキシ樹脂または芳香族エポキシ樹脂が５ｗｔ％以下の脂環式エポキシ樹脂と、を備えた半導体装置である。この発明は、配置部と封止部とを接合する「芳香族エポキシ樹脂が含まれていない脂環式エポキシ樹脂または芳香族エポキシ樹脂が５ｗｔ％以下の脂環式エポキシ樹脂」を備えていれば足る。「芳香族エポキシ樹脂が含まれていない脂環式エポキシ樹脂または芳香族エポキシ樹脂が５ｗｔ％以下の脂環式エポキシ樹脂」を含む樹脂組成物によって配置部と封止部とが接合される場合であっても、半導体装置が「芳香族エポキシ樹脂が含まれていない脂環式エポキシ樹脂または芳香族エポキシ樹脂が５ｗｔ％以下の脂環式エポキシ樹脂」を備えていることに変わりはなく、本発明に含まれる。
なお、封止部には、その名称の如何を問わず、発光素子を封止する機能を果たす全ての部材が含まれる。 The present invention includes a light emitting element, an arrangement part in which the light emitting element is arranged, a sealing part that is joined to the arrangement part, seals the light emitting element, and transmits light emitted from the light emitting element, A semiconductor device comprising: an alicyclic epoxy resin not containing an aromatic epoxy resin or an alicyclic epoxy resin having an aromatic epoxy resin content of 5 wt% or less that joins the arrangement portion and the sealing portion. . If this invention is equipped with the "alicyclic epoxy resin or aromatic epoxy resin not containing aromatic epoxy resin containing 5 wt% or less" that joins the arrangement portion and the sealing portion Enough. In the case where the arrangement portion and the sealing portion are joined by a resin composition containing “an alicyclic epoxy resin not containing an aromatic epoxy resin or an alicyclic epoxy resin having an aromatic epoxy resin of 5 wt% or less”. Even in such a case, the semiconductor device is provided with “an alicyclic epoxy resin not containing an aromatic epoxy resin or an alicyclic epoxy resin having an aromatic epoxy resin of 5 wt% or less”. include.
Note that the sealing portion includes all members that perform the function of sealing the light emitting element regardless of the name.

前記脂環式エポキシ樹脂は、その厚みを１０ｍｍにした場合における、４００ｎｍの波長域に発光ピーク波長を有する光の透過率が９５％以上であることが好ましい。
ここで、「その厚みを１０ｍｍにした場合における」とは、脂環式エポキシ樹脂の厚みが１０ｍｍであるとの意味ではなく、仮に厚みを１０ｍｍにしたならば、４００ｎｍの波長域に発光ピーク波長を有する光の透過率が９５％以上となる脂環式エポキシ樹脂を用いる、との意味である。 The alicyclic epoxy resin preferably has a light transmittance of 95% or more having an emission peak wavelength in a wavelength region of 400 nm when the thickness is 10 mm.
Here, “when the thickness is 10 mm” does not mean that the thickness of the alicyclic epoxy resin is 10 mm. If the thickness is 10 mm, the emission peak wavelength is in the wavelength region of 400 nm. This means that an alicyclic epoxy resin having a light transmittance of 95% or more is used.

前記脂環式エポキシ樹脂は、高圧水銀ランプ照射（５０ｍＷ／ｃｍ２×１０日）後における、４００ｎｍの波長域に発光ピーク波長を有する光の透過率が９０％以上であることが好ましい。
ここで、「高圧水銀ランプ照射（５０ｍＷ／ｃｍ２×１０日）後における」とは、（５０ｍＷ／ｃｍ２×１０日）の条件で高圧水銀ランプが照射された脂環式エポキシ樹脂であるとの意味ではなく、仮に（５０ｍＷ／ｃｍ２×１０日）の条件で高圧水銀ランプを照射したならば、４００ｎｍの波長域に発光ピーク波長を有する光の透過率が９０％以上となる脂環式エポキシ樹脂を用いる、との意味である。 The alicyclic epoxy resin preferably has a transmittance of 90% or more of light having an emission peak wavelength in a wavelength region of 400 nm after irradiation with a high-pressure mercury lamp (50 mW / cm 2 × 10 days).
Here, “after high-pressure mercury lamp irradiation (50 mW / cm 2 × 10 days)” means an alicyclic epoxy resin irradiated with a high-pressure mercury lamp under the conditions of (50 mW / cm 2 × 10 days). If the high-pressure mercury lamp is irradiated under the condition of (50 mW / cm 2 × 10 days), the transmittance of light having an emission peak wavelength in the wavelength region of 400 nm is 90% or more. It means that an epoxy resin is used.

前記脂環式エポキシ樹脂は分子量が５００以下であることが好ましい。   The alicyclic epoxy resin preferably has a molecular weight of 500 or less.

前記半導体装置において、さらに、前記配置部と前記封止部とで囲まれた空間に吸着剤を備えていることが好ましい。   In the semiconductor device, it is preferable that an adsorbent is further provided in a space surrounded by the arrangement portion and the sealing portion.

前記吸着剤は、ゼオライトであることが好ましい。
前記吸着剤の孔径は、前記樹脂から生じるガスを構成する分子の径よりも大きいことが好ましい。 The adsorbent is preferably zeolite.
It is preferable that the pore diameter of the adsorbent is larger than the diameter of molecules constituting the gas generated from the resin.

前記半導体装置において、さらに、前記配置部と前記封止部とで囲まれた空間に光触媒を備えていることが好ましい。   In the semiconductor device, it is preferable that a photocatalyst is further provided in a space surrounded by the arrangement portion and the sealing portion.

前記半導体装置において、さらに、マイクロプリズムを備え、前記発光素子がレーザダイオードとする構成を採ることもできる。   The semiconductor device may further include a microprism so that the light emitting element is a laser diode.

前記半導体装置において、さらに、受光素子を備え、前記発光素子がレーザダイオードとする構成を採ることもできる。   The semiconductor device may further include a light receiving element, and the light emitting element may be a laser diode.

前記発光素子は、窒化物系半導体発光素子であることが好ましい。   The light emitting device is preferably a nitride semiconductor light emitting device.

本発明は、配置部と封止部とが溶接ではなく樹脂により接合された半導体装置に吸着剤を設ける構成により、あるいは、配置部と封止部とを接合する樹脂に芳香族エポキシ樹脂が含まれていない脂環式エポキシ樹脂または芳香族エポキシ樹脂が５ｗｔ％以下の脂環式エポキシ樹脂を用いる構成により、安価でありながらも、寿命の向上を図ることが可能な半導体装置を提供する。   In the present invention, an aromatic epoxy resin is included in the resin that joins the placement portion and the sealing portion by a configuration in which the adsorbent is provided in the semiconductor device in which the placement portion and the sealing portion are joined by resin instead of welding. Provided is a semiconductor device capable of improving the life while being inexpensive by using an alicyclic epoxy resin whose alicyclic epoxy resin or aromatic epoxy resin is not more than 5 wt%.

以下に、添付した図面を参照しつつ、本発明を実施するための最良の形態を詳細に説明する。   The best mode for carrying out the present invention will be described below in detail with reference to the accompanying drawings.

図１は、本発明の第１の実施の形態に係る半導体装置１００の概略を示す図である。
図１に示すように、第１の実施の形態に係る半導体装置１００は、発光素子１１０と、発光素子１１０が配置される平板状の配置部１２０と、封止部１３０と、配置部１２０と封止部１３０とを接合する樹脂１４０と、吸着剤１５０と、光触媒１６０と、を備えている。この第１の実施の形態に係る半導体装置１００によれば、配置部１２０と封止部１３０との接合が樹脂１４０によりなされるため、従来と比較して、半導体装置１００における封止を安価に行うことが可能となる。
ここで、配置部１２０には、スルーホール１７０などの貫通孔が設けられており、配置部１２０の裏面には、スルーホール１７０に接して電極１８０が設けられている。発光素子１１０には、これらスルーホール１７０及び電極１８０を介して電力が供給される。
また、封止部１３０は、樹脂１４０によって配置部１２０と接合され、発光素子１１０を封止し、発光素子１１０から発せられる光を透過するガラスなどからなる。
図１に示すように、第１の実施の形態では、封止部１３０がレンズ形状に形成されているが、このようにすると、発光素子１１０から放射状に発せられた光の焦点を絞ることが可能となる。
吸着剤１５０は、樹脂１４０から発生するガスを吸着し、配置部１２０と封止部１３０とで囲まれた空間内にガスが滞留するのを抑える。樹脂１４０から発生したガスが発光素子１１０に付着し安定化すると、発光素子１１０を通電させた場合に、光分解によって一部はガス化し、一部は付着物として発光素子１１０に付着したままとなる。ここで、発光素子１１０を通電し続けると、付着物が光エネルギの蓄積により、光吸収率が大きな材質に変質する。このため、半導体装置１００からの光出力を一定に保つためには、発光素子１１０の駆動電流を大きくする必要が生じるが、発光素子１１０の駆動電流を大きくすると、発光素子１１０が劣化しやすくなり、寿命が短くなる。しかしながら、第１の実施の形態によれば、吸着剤１５０による吸着により、樹脂１４０から発生するガスの発光素子１１０に付着する量を低下できるため、発光素子１１０、ひいては半導体装置１００の寿命を向上させることができる。
なお、第１の実施の形態では、吸着剤１５０に加えて、光触媒１６０を備えている。樹脂１４０から生じたガスは発光素子１１０に付着するが、光触媒１６０は、樹脂１４０から生じたガスが発光素子１１０に付着する前に、これを低分子化（分子量を小さく）する。発光素子１１０に付着したガスは、その分子量が小さい方が、発光素子１１０からの光照射による光分解でガス化し易い傾向にある。逆に言うと、発光素子１１０に付着したガスは、その分子量が大きいほど、光分解によりガス化がし難く、発光素子１１０に付着したままとなる。したがって、光触媒１６０によれば、発光素子１１０の付着物を光分解によって取り除きやすくなる。このように、第１の実施の形態によれば、吸着剤１５０と光触媒１６０との組合せにより、吸着剤１５０を単独で用いる場合と比較して、発光素子１１０、ひいては半導体装置１００の寿命を向上させることができる。 FIG. 1 is a diagram schematically showing a semiconductor device 100 according to the first embodiment of the present invention.
As shown in FIG. 1, the semiconductor device 100 according to the first embodiment includes a light emitting element 110, a flat plate-like arrangement portion 120 in which the light emitting element 110 is arranged, a sealing portion 130, and an arrangement portion 120. A resin 140 that joins the sealing portion 130, an adsorbent 150, and a photocatalyst 160 are provided. According to the semiconductor device 100 according to the first embodiment, since the placement portion 120 and the sealing portion 130 are joined by the resin 140, the sealing in the semiconductor device 100 is cheaper than in the past. Can be done.
Here, the arrangement portion 120 is provided with a through hole such as a through hole 170, and an electrode 180 is provided on the back surface of the arrangement portion 120 in contact with the through hole 170. Electric power is supplied to the light emitting element 110 through the through hole 170 and the electrode 180.
In addition, the sealing portion 130 is made of glass or the like that is bonded to the arrangement portion 120 with the resin 140, seals the light emitting element 110, and transmits light emitted from the light emitting element 110.
As shown in FIG. 1, in the first embodiment, the sealing portion 130 is formed in a lens shape. However, in this case, the light emitted radially from the light emitting element 110 can be focused. It becomes possible.
The adsorbent 150 adsorbs the gas generated from the resin 140 and suppresses the gas from staying in the space surrounded by the arrangement part 120 and the sealing part 130. When the gas generated from the resin 140 adheres to the light emitting element 110 and stabilizes, when the light emitting element 110 is energized, part of the gas is gasified by photolysis and part of the gas remains attached to the light emitting element 110 as an adhering substance. Become. Here, when the light emitting element 110 is continuously energized, the attached material is transformed into a material having a large light absorption rate due to the accumulation of light energy. Therefore, in order to keep the light output from the semiconductor device 100 constant, it is necessary to increase the driving current of the light emitting element 110. However, if the driving current of the light emitting element 110 is increased, the light emitting element 110 is likely to deteriorate. The life is shortened. However, according to the first embodiment, the amount of the gas generated from the resin 140 adhering to the light emitting element 110 can be reduced by the adsorption by the adsorbent 150, so that the lifetime of the light emitting element 110, and by extension, the semiconductor device 100 is improved. Can be made.
In the first embodiment, a photocatalyst 160 is provided in addition to the adsorbent 150. The gas generated from the resin 140 adheres to the light emitting element 110, but the photocatalyst 160 reduces the molecular weight (lowers the molecular weight) before the gas generated from the resin 140 adheres to the light emitting element 110. The gas attached to the light emitting element 110 tends to be easily gasified when the molecular weight is smaller due to photolysis by light irradiation from the light emitting element 110. Conversely, the gas attached to the light emitting element 110 is less likely to be gasified by photolysis as the molecular weight increases, and remains attached to the light emitting element 110. Therefore, according to the photocatalyst 160, the deposits of the light emitting element 110 can be easily removed by photolysis. As described above, according to the first embodiment, the lifetime of the light emitting element 110 and thus the semiconductor device 100 is improved by the combination of the adsorbent 150 and the photocatalyst 160 as compared with the case where the adsorbent 150 is used alone. Can be made.

図２は、本発明の第２の実施の形態に係る半導体装置２００の概略を示す図である。
図２に示すように、第２の実施の形態に係る半導体装置２００は、発光素子２１０と、発光素子２１０が配置される箱状の配置部２２０と、封止部２３０と、配置部２２０と封止部２３０とを接合する樹脂２４０と、を備えている。この第２の実施の形態に係る半導体装置２００によれば、配置部２２０と封止部２３０との接合が樹脂２４０によりなされるため、従来と比較して、半導体装置２００における封止を安価に行うことが可能となる。
ここで、配置部２２０には、スルーホール２７０などの貫通孔が設けられており、配置部２２０の裏面には、スルーホール２７０に接して電極２８０が設けられている。発光素子２１０には、これらスルーホール２７０及び電極２８０を介して電力が供給される。また、第２の実施の形態においては、配置部２２０の底に凹部が設けられ、この凹部に発光素子２１０が配置されている。
また、封止部２３０は、樹脂２４０によって配置部２２０と接合され、発光素子２１０を封止し、発光素子２１０から発せられる光を透過するガラスなどからなる。
吸着剤２５０は、樹脂２４０から発生するガスを吸着し、配置部２２０と封止部２３０とで囲まれた空間内にガスが滞留するのを抑える。樹脂２４０から発生したガスが発光素子２１０に付着し安定化すると、発光素子２１０を通電させた場合に、光分解によって一部はガス化し、一部は付着物として発光素子２１０に付着したままとなる。ここで、発光素子２１０を通電し続けると、付着物が光エネルギの蓄積により、光吸収率が大きな材質に変質する。このため、半導体装置２００からの光出力を一定に保つためには、発光素子２１０の駆動電流を大きくする必要が生じるが、発光素子２１０の駆動電流を大きくすると、発光素子２１０が劣化しやすくなり、寿命が短くなる。しかしながら、第２の実施の形態によれば、吸着剤２５０による吸着により、樹脂２４０から発生するガスの発光素子２１０に付着する量を低下できるため、発光素子２１０、ひいては半導体装置２００の寿命を向上させることができる。
なお、第２の実施の形態では、吸着剤２５０に加えて、光触媒２６０を備えている。樹脂２４０から生じたガスは発光素子２１０に付着するが、光触媒２６０は、樹脂２４０から生じたガスが発光素子２１０に付着する前に、これを低分子化（分子量を小さく）する。発光素子２１０に付着したガスは、その分子量が小さい方が、発光素子２１０からの光照射による光分解でガス化し易い傾向にある。逆に言うと、発光素子２１０に付着したガスは、その分子量が大きいほど、光分解によるガス化がし難く、発光素子２１０に付着したままとなる。したがって、光触媒２６０によれば、発光素子２１０の付着物を光分解によって取り除きやすくなる。このように、第２の実施の形態によれば、吸着剤２５０と光触媒２６０との組合せにより、吸着剤２５０を単独で用いる場合と比較して、発光素子２１０、ひいては半導体装置２００の寿命を向上させることができる。 FIG. 2 schematically shows a semiconductor device 200 according to the second embodiment of the present invention.
As shown in FIG. 2, the semiconductor device 200 according to the second embodiment includes a light emitting element 210, a box-shaped arrangement part 220 in which the light emitting element 210 is arranged, a sealing part 230, and an arrangement part 220. And a resin 240 that joins the sealing portion 230. According to the semiconductor device 200 according to the second embodiment, since the placement portion 220 and the sealing portion 230 are joined by the resin 240, sealing in the semiconductor device 200 is inexpensive compared to the conventional case. Can be done.
Here, the arrangement part 220 is provided with a through hole such as a through hole 270, and an electrode 280 is provided on the back surface of the arrangement part 220 in contact with the through hole 270. Electric power is supplied to the light emitting element 210 through the through hole 270 and the electrode 280. In the second embodiment, a recess is provided at the bottom of the arrangement portion 220, and the light emitting element 210 is arranged in the recess.
The sealing portion 230 is made of glass or the like that is bonded to the arrangement portion 220 with a resin 240, seals the light emitting element 210, and transmits light emitted from the light emitting element 210.
The adsorbent 250 adsorbs the gas generated from the resin 240 and suppresses the gas from staying in the space surrounded by the arrangement part 220 and the sealing part 230. When the gas generated from the resin 240 adheres to the light emitting element 210 and stabilizes, when the light emitting element 210 is energized, part of the gas is gasified by photolysis, and part of the gas remains attached to the light emitting element 210 as an adhering substance. Become. Here, when the light emitting element 210 is continuously energized, the adhering matter is transformed into a material having a large light absorption rate due to the accumulation of light energy. Therefore, in order to keep the light output from the semiconductor device 200 constant, it is necessary to increase the driving current of the light emitting element 210. However, if the driving current of the light emitting element 210 is increased, the light emitting element 210 is likely to deteriorate. The life is shortened. However, according to the second embodiment, the amount of the gas generated from the resin 240 adhering to the light emitting element 210 can be reduced by the adsorption by the adsorbent 250, so that the lifetime of the light emitting element 210 and thus the semiconductor device 200 is improved. Can be made.
In the second embodiment, a photocatalyst 260 is provided in addition to the adsorbent 250. The gas generated from the resin 240 adheres to the light emitting element 210, but the photocatalyst 260 reduces the molecular weight (lowers the molecular weight) before the gas generated from the resin 240 adheres to the light emitting element 210. The gas attached to the light emitting element 210 tends to gasify more easily when the molecular weight is smaller due to photolysis by light irradiation from the light emitting element 210. Conversely, the gas attached to the light emitting element 210 is less likely to be gasified by photolysis as the molecular weight increases, and remains attached to the light emitting element 210. Therefore, according to the photocatalyst 260, it becomes easy to remove the deposits of the light emitting element 210 by photolysis. As described above, according to the second embodiment, the lifetime of the light emitting element 210 and thus the semiconductor device 200 is improved by the combination of the adsorbent 250 and the photocatalyst 260 as compared with the case where the adsorbent 250 is used alone. Can be made.

図３は、本発明の第３の実施の形態に係るレーザカプラ３００の概略を示す図である。
図３に示すように、本発明の第３の実施の形態に係るレーザカプラ３００は、２波長レーザダイオード３１０と、配置部３２０と、封止部の一例である波長板３３０と、配置部３２０と波長板３３０とを接合する樹脂３４０と、吸着剤３５０と、複合レンズ３６０と、複合プリズム３７０と、受光素子３８０と、マイクロプリズム３９０と、を有している。
第３の実施の形態に係るレーザカプラ３００においては、２波長レーザダイオード３１０からの光がマイクロプリズム３９０で反射され、波長板３３０、複合レンズ３６０、複合プリズム３７０を介して、ディスクに照射される。また、ディスクからの光は、複合プリズム３７０、複合レンズ３６０、波長板３３０を介して、受光素子３８０に入射する。
吸着剤３５０は、樹脂３４０から発生するガスを吸着し、配置部３２０と波長板３３０とで囲まれた空間内にガスが滞留するのを抑える。樹脂３４０から発生したガスが２波長レーザダイオード３１０に付着し安定化すると、２波長レーザダイオード３１０を通電させた場合に、光分解によって一部はガス化し、一部は付着物として２波長レーザダイオード３１０に付着したままとなる。ここで、２波長レーザダイオード３１０を通電し続けると、付着物が光エネルギの蓄積により、光吸収率が大きな材質に変質する。このため、レーザカプラ３００からの光出力を一定に保つためには、２波長レーザダイオード３１０の駆動電流を大きくする必要が生じるが、２波長レーザダイオード３１０の駆動電流を大きくすると、２波長レーザダイオード３１０が劣化しやすくなり、寿命が短くなる。しかしながら、第３の実施の形態によれば、吸着剤３５０による吸着により、樹脂３４０から発生するガスの２波長レーザダイオード３１０に付着する量を低下できるため、２波長レーザダイオード３１０、ひいてはレーザカプラ３００の寿命を向上させることができる。
なお、図示してはいないが、第３の実施の形態においても、第１の実施の形態及び第２の実施の形態の場合と同様にして、光触媒を備えることができる。 FIG. 3 is a diagram showing an outline of a laser coupler 300 according to the third embodiment of the present invention.
As shown in FIG. 3, a laser coupler 300 according to the third embodiment of the present invention includes a two-wavelength laser diode 310, an arrangement unit 320, a wave plate 330 that is an example of a sealing unit, and an arrangement unit 320. And a wave plate 330, an adsorbent 350, a composite lens 360, a composite prism 370, a light receiving element 380, and a microprism 390.
In the laser coupler 300 according to the third embodiment, the light from the two-wavelength laser diode 310 is reflected by the microprism 390 and irradiated onto the disk via the waveplate 330, the composite lens 360, and the composite prism 370. . Further, light from the disk enters the light receiving element 380 via the composite prism 370, the composite lens 360, and the wave plate 330.
The adsorbent 350 adsorbs the gas generated from the resin 340 and suppresses the gas from staying in the space surrounded by the arrangement part 320 and the wave plate 330. When the gas generated from the resin 340 adheres to the two-wavelength laser diode 310 and stabilizes, when the two-wavelength laser diode 310 is energized, a part of the gas is gasified by photolysis, and a part of the two-wavelength laser diode is deposited. It remains attached to 310. Here, if the two-wavelength laser diode 310 is continuously energized, the deposits are transformed into a material having a large light absorption rate due to the accumulation of light energy. Therefore, in order to keep the optical output from the laser coupler 300 constant, it is necessary to increase the drive current of the two-wavelength laser diode 310. However, if the drive current of the two-wavelength laser diode 310 is increased, the two-wavelength laser diode 310 is likely to deteriorate and the life is shortened. However, according to the third embodiment, the amount of the gas generated from the resin 340 adhering to the two-wavelength laser diode 310 can be reduced by the adsorption by the adsorbent 350, so that the two-wavelength laser diode 310 and thus the laser coupler 300 can be reduced. Can improve the service life.
Although not shown, in the third embodiment, a photocatalyst can be provided in the same manner as in the first and second embodiments.

次ぎに、第１、２、３の実施の形態で説明した各部材についてより詳細に説明する。   Next, each member described in the first, second, and third embodiments will be described in more detail.

［発光素子１１０、２１０、３１０］
発光素子は、その形状や材質などを特に限定されないが、窒化物系発光素子、特に、窒化物系発光ダイオードや窒化物系レーザダイオードなどを用いることが好ましく、より好ましくは、可視光の短波長側の光や紫外線領域の光を発する窒化物系発光ダイオードや窒化物系レーザダイオードなどである。窒化物系発光ダイオードや窒化物系レーザダイオード（特に、可視光の短波長側の光や紫外線領域の光を発するもの）などについては、安価であるにもかかわらず寿命が長いということが求められており、寿命の向上を図ることができる第１の実施の形態及び第２の実施の形態は、これら窒化物系発光ダイオードや窒化物系レーザダイオード（特に、可視光の短波長側の光や紫外線領域の光を発するもの）などに好適に適用できる。なお、発光素子の数は特に限定されず、１以上であればよい。２以上の発光素子を用いる場合は、少なくとも１つが上記した窒化物系発光素子、特に、窒化物系発光ダイオードや窒化物系レーザダイオード（なかでも、可視光の短波長側の光や紫外線領域の光を発する窒化物系発光ダイオードや窒化物系レーザダイオード）などであることが好ましい。 [Light emitting elements 110, 210, 310]
The shape and material of the light-emitting element are not particularly limited, but a nitride-based light-emitting element, in particular, a nitride-based light-emitting diode or a nitride-based laser diode is preferably used, and more preferably a short wavelength of visible light Nitride-based light-emitting diodes and nitride-based laser diodes that emit light on the side and in the ultraviolet region. Nitride-based light-emitting diodes and nitride-based laser diodes (especially those that emit light on the short wavelength side of visible light or light in the ultraviolet region) are required to have a long life despite being inexpensive. In the first embodiment and the second embodiment, which can improve the lifetime, these nitride-based light-emitting diodes and nitride-based laser diodes (especially, light on the short wavelength side of visible light) And the like that emit light in the ultraviolet region). Note that the number of light-emitting elements is not particularly limited and may be one or more. When two or more light-emitting elements are used, at least one of the nitride-based light-emitting elements described above, in particular, a nitride-based light-emitting diode or a nitride-based laser diode (in particular, light in the short wavelength side of visible light or in the ultraviolet region) Nitride-based light-emitting diodes or nitride-based laser diodes that emit light are preferable.

［配置部１２０、２２０、３３０］
配置部は、その形状や材質を特に限定されない。 [Arrangements 120, 220, 330]
The arrangement portion is not particularly limited in its shape and material.

［封止部１３０、２３０、３３０］
封止部は、その形状や材質を特に限定されない。なお、封止部は、その名称の如何を問わず、発光素子を封止する機能を果たせばよい。 [Sealing portions 130, 230, 330]
The shape and material of the sealing part are not particularly limited. Note that the sealing portion may have a function of sealing the light emitting element regardless of the name.

［樹脂１４０、２４０、３４０］
図４は、発光時間と光量との関係が、発光素子に付着している樹脂の材質の違いによってどのように変化するかを示すモデル図であり、図４（ａ）は脂環式エポキシ樹脂が発光素子に付着している場合のモデル図、図４（ｂ）は芳香族エポキシ樹脂が発光素子に付着している場合のモデル図である。
樹脂は、配置部と封止部とを接合できるものであれば、特に、その形状や材質を限定されないが、芳香族エポキシ樹脂が含まれていない脂環式エポキシ樹脂、または、芳香族エポキシ樹脂が５ｗｔ％以下の脂環式エポキシ樹脂を用いることが好ましい。芳香環は、４００ｎｍ付近（特に４０７ｎｍ）に発光ピーク波長がある光の吸収が少ない樹脂として知られているが、光分解と酸化が進行すると、共役結合が増加して、４００ｎｍ付近（特に４０７ｎｍ）に発光ピーク波長がある光を吸収する性質（黄変）を持つ。このため、発光素子に付着した物が芳香族エポキシ樹脂から生じたガスに基づく場合、発光素子からの光量が、発光開始から所定時間経過後に低下し始める。これに対し、脂環式エポキシ樹脂は二重結合を持たない。したがって、芳香族エポキシ樹脂が含まれていない脂環式エポキシ樹脂、または、芳香族エポキシ樹脂が５ｗｔ％以下の脂環式エポキシ樹脂から生じたガスは、光分解しても黄変し難い。よって、芳香族エポキシ樹脂が含まれていない脂環式エポキシ樹脂、または、芳香族エポキシ樹脂が５ｗｔ％以下の脂環式エポキシ樹脂を用いることとすれば、これらの樹脂から生じたガスが発光素子に付着して付着物となった場合に、発光開始から所定時間経過後に光量が低下するということがない。
なお、脂環式エポキシ樹脂は、その厚みを仮に１０ｍｍにしたならば、４００ｎｍの波長域に発光ピーク波長を有する光の透過率が９５％以上となるものが好ましく、より好ましくは、この条件を満たした上で、さらに、仮に（５０ｍＷ／ｃｍ２×１０日）の条件で高圧水銀ランプを照射したならば、その照射後において、４００ｎｍの波長域に発光ピーク波長を有する光の透過率が９０％以上となるものが良い。
なお、配置部と封止部とを接合する樹脂は、分子量が小さいことが好ましく、望ましくは５００以下である。樹脂から生じて発光素子に付着したガスは、光分解によりガス化するが、このガス化は、発光素子に付着したガスの分子量が小さいほど、進行しやすい。したがって、樹脂の分子量が小さい場合は、分子量が大きい場合と比較して、発光素子の発光開始から短時間で発光素子に付着した物がガス化し、発光素子からの光量が短時間で向上し易い。また、樹脂の分子量が小さい場合は、分子量が大きい場合よりも、発光素子に付着していた物がより多くガス化するため、発光素子からの光量が向上し易い。よって、分子量が小さい樹脂を用いれば、半導体装置の寿命をより長くすることができる。
なお、配置部と封止部とを接合する樹脂として、芳香族エポキシ樹脂が含まれていない脂環式エポキシ樹脂、または、芳香族エポキシ樹脂が５ｗｔ％以下の脂環式エポキシ樹脂を単独で用いることもできるが、これらに硬化剤や硬化促進剤や充填剤や顔料などを加えて組成物としたものを用いることもできる。 [Resin 140, 240, 340]
FIG. 4 is a model diagram showing how the relationship between the light emission time and the amount of light changes depending on the difference in the material of the resin adhering to the light emitting element, and FIG. 4A is an alicyclic epoxy resin. FIG. 4B is a model diagram in the case where an aromatic epoxy resin is attached to the light emitting element.
As long as the resin can join the arrangement part and the sealing part, the shape and material are not particularly limited, but the alicyclic epoxy resin not containing the aromatic epoxy resin, or the aromatic epoxy resin Is preferably 5 wt% or less of an alicyclic epoxy resin. An aromatic ring is known as a resin having a light emission peak wavelength near 400 nm (especially 407 nm) and low light absorption. However, as photolysis and oxidation proceed, the conjugated bond increases, and the vicinity of 400 nm (especially 407 nm) increases. It has the property of absorbing light having an emission peak wavelength (yellowing). For this reason, when the thing adhering to a light emitting element is based on the gas which arose from aromatic epoxy resin, the light quantity from a light emitting element begins to fall after predetermined time progress from light emission start. In contrast, alicyclic epoxy resins do not have double bonds. Therefore, a gas generated from an alicyclic epoxy resin not containing an aromatic epoxy resin or an alicyclic epoxy resin having an aromatic epoxy resin content of 5 wt% or less is hardly yellowed even when photolyzed. Therefore, if an alicyclic epoxy resin that does not contain an aromatic epoxy resin or an alicyclic epoxy resin having an aromatic epoxy resin content of 5 wt% or less is used, the gas generated from these resins emits light-emitting elements. In this case, the amount of light does not decrease after a predetermined time has elapsed since the start of light emission.
If the thickness of the alicyclic epoxy resin is 10 mm, it is preferable that the transmittance of light having an emission peak wavelength in the wavelength region of 400 nm is 95% or more, and more preferably, this condition is satisfied. Furthermore, if the high-pressure mercury lamp is irradiated under the condition of (50 mW / cm 2 × 10 days) after satisfying the condition, the transmittance of light having an emission peak wavelength in the wavelength region of 400 nm after the irradiation is 90. % Or more is good.
In addition, it is preferable that resin which joins an arrangement | positioning part and a sealing part has a small molecular weight, It is 500 or less desirably. The gas generated from the resin and attached to the light emitting element is gasified by photolysis, but this gasification is more likely to proceed as the molecular weight of the gas attached to the light emitting element is smaller. Therefore, when the molecular weight of the resin is small, compared with the case where the molecular weight is large, the thing adhering to the light emitting element is gasified in a short time from the start of light emission of the light emitting element, and the amount of light from the light emitting element is easily improved in a short time. . In addition, when the molecular weight of the resin is small, the amount of light attached to the light emitting element is more gasified than when the molecular weight is large, and thus the amount of light from the light emitting element is easily improved. Therefore, if a resin having a low molecular weight is used, the lifetime of the semiconductor device can be further extended.
In addition, as resin which joins an arrangement | positioning part and a sealing part, the alicyclic epoxy resin in which an aromatic epoxy resin is not contained, or the alicyclic epoxy resin whose aromatic epoxy resin is 5 wt% or less is used independently. However, it is also possible to use a composition obtained by adding a curing agent, a curing accelerator, a filler or a pigment to these.

［電極１８０、２８０］
電極は、その形状や材質を特に限定されない。 [Electrodes 180, 280]
The shape and material of the electrode are not particularly limited.

［吸着剤１５０、２５０］
吸着剤は、その形状や材質を特に限定されないが、たとえば、活性炭やゼオライトなどを用いることができる。また、吸着剤を配置する位置は、樹脂の近傍にあることが好ましい。樹脂から発生するガスを効果的に吸着させることができるからである。但し、吸着剤を配置する位置は、これに限定されず、配置部と封止部とで囲まれた空間であればどこでもよい。
吸着剤による吸着は、ガスの分子径が吸着剤の孔径よりも小さいほうが促進され、ガスの分子径は、ガスの分子量が小さいほど小さくなる。したがって、吸着剤の孔径は、樹脂から生じるガスを構成する分子の径よりも大きいことが好ましい。
なお、吸着剤を、上記で説明した樹脂とともに用いることとすれば、吸着剤により脂環式エポキシ樹脂から発生するガスの大部分は吸着することができ、また、吸着できずに発光素子に付着した付着物についても、発光素子からの光によって変質せず、発光素子の光出力の大幅な低減を抑制することができる。 [Adsorbent 150, 250]
The shape and material of the adsorbent are not particularly limited. For example, activated carbon or zeolite can be used. Moreover, it is preferable that the position which arrange | positions adsorption agent exists in resin vicinity. This is because the gas generated from the resin can be effectively adsorbed. However, the position where the adsorbent is disposed is not limited to this, and may be any space as long as it is a space surrounded by the placement portion and the sealing portion.
Adsorption by the adsorbent is promoted when the molecular diameter of the gas is smaller than the pore diameter of the adsorbent, and the molecular diameter of the gas becomes smaller as the molecular weight of the gas is smaller. Therefore, the pore diameter of the adsorbent is preferably larger than the diameter of the molecules constituting the gas generated from the resin.
If the adsorbent is used together with the resin described above, most of the gas generated from the alicyclic epoxy resin can be adsorbed by the adsorbent, and cannot be adsorbed and adheres to the light emitting element. The attached matter is not deteriorated by light from the light emitting element, and a significant reduction in the light output of the light emitting element can be suppressed.

［光触媒１６０、２６０］
光触媒は、その形状や材質を特に限定されない。また、光触媒を配置する位置は、特に限定されず、配置部と封止部とで囲まれた空間であればどこでもよい。上述したように、吸着剤と光触媒との組合せにより、吸着剤を単独で用いる場合と比較して、発光素子、ひいては半導体装置の寿命を向上させることができる。なお、配置部と封止部とを樹脂で接合する際や、配置部内における部材を樹脂で接合する際に、これらの樹脂を硬化などするために高圧水銀ランプなどの紫外線を用いる場合には、この紫外線により光触媒を活性化させることができ、半導体装置の製造工程の簡略化を図ることができる。 [Photocatalyst 160, 260]
The shape and material of the photocatalyst are not particularly limited. Further, the position where the photocatalyst is disposed is not particularly limited, and may be any space as long as it is surrounded by the disposition portion and the sealing portion. As described above, the combination of the adsorbent and the photocatalyst can improve the lifetime of the light emitting element, and thus the semiconductor device, as compared with the case where the adsorbent is used alone. In addition, when joining the placement portion and the sealing portion with a resin, or when joining the members in the placement portion with a resin, when using ultraviolet rays such as a high-pressure mercury lamp to cure these resins, The photocatalyst can be activated by the ultraviolet rays, and the manufacturing process of the semiconductor device can be simplified.

以上説明した半導体装置は、発光素子を有するすべての半導体装置（たとえば、レーザカプラなど）に適用できる。   The semiconductor device described above can be applied to all semiconductor devices having a light emitting element (for example, a laser coupler).

本発明の第１の実施の形態に係る半導体装置の概略を示す図である。1 is a diagram showing an outline of a semiconductor device according to a first embodiment of the present invention. 本発明の第２の実施の形態に係る半導体装置の概略を示す図である。It is a figure which shows the outline of the semiconductor device which concerns on the 2nd Embodiment of this invention. 本発明の第３の実施の形態に係るレーザカプラ３００の概略を示す図である。It is a figure which shows the outline of the laser coupler 300 which concerns on the 3rd Embodiment of this invention. 発光時間と光量との関係が、発光素子に付着している樹脂の材質の違いによってどのように変化するかを示すモデル図である。It is a model figure which shows how the relationship between light emission time and light quantity changes with the difference in the material of the resin adhering to the light emitting element.

符号の説明Explanation of symbols

１００、２００ 半導体装置
１１０、２１０ 発光素子
１２０、２２０、３２０ 配置部
１３０、２３０ 封止部
１４０、２４０、３４０ 樹脂
１５０、２５０、３５０ 吸着剤
１６０、２６０ 光触媒
１７０、２７０ スルーホール
１８０、２８０ 電極
３００ レーザカプラ
３１０ ２波長レーザダイオード
３３０ 波長板
３６０ 複合レンズ
３７０ 複合プリズム
３８０ 受光素子
３９０ マイクロプリズム 100, 200 Semiconductor device 110, 210 Light emitting element 120, 220, 320 Arrangement part 130, 230 Sealing part 140, 240, 340 Resin 150, 250, 350 Adsorbent 160, 260 Photocatalyst 170, 270 Through hole 180, 280 Electrode 300 Laser coupler 310 Two-wavelength laser diode 330 Wave plate 360 Compound lens 370 Compound prism 380 Light receiving element 390 Micro prism

Claims (14)

発光素子と、
前記発光素子が配置される配置部と、
前記配置部と接合され、前記発光素子を封止し、前記発光素子から発せられる光を透過する封止部と、
前記配置部と前記封止部とを接合する樹脂と、
前記配置部と前記封止部とで囲まれた空間に設けられた吸着剤と、
を備えたことを特徴とする半導体装置。 A light emitting element;
An arrangement part in which the light emitting element is arranged;
A sealing portion that is joined to the arrangement portion, seals the light emitting element, and transmits light emitted from the light emitting element;
A resin that joins the placement portion and the sealing portion;
An adsorbent provided in a space surrounded by the placement portion and the sealing portion;
A semiconductor device comprising: 前記吸着剤の孔径は、前記樹脂から生じるガスを構成する分子の径よりも大きい、ことを特徴とする請求項１に記載の半導体装置。   The semiconductor device according to claim 1, wherein a pore diameter of the adsorbent is larger than a diameter of a molecule constituting a gas generated from the resin. 前記吸着剤は、ゼオライトであることを特徴とする請求項１に記載の半導体装置。   The semiconductor device according to claim 1, wherein the adsorbent is zeolite. 発光素子と、
前記発光素子が配置される配置部と、
前記配置部と接合され、前記発光素子を封止し、前記発光素子から発せられる光を透過する封止部と、
前記配置部と前記封止部とを接合する、芳香族エポキシ樹脂が含まれていない脂環式エポキシ樹脂または芳香族エポキシ樹脂が５ｗｔ％以下の脂環式エポキシ樹脂と、
を備えたことを特徴とする半導体装置。 A light emitting element;
An arrangement part in which the light emitting element is arranged;
A sealing portion that is joined to the arrangement portion, seals the light emitting element, and transmits light emitted from the light emitting element;
An alicyclic epoxy resin containing no aromatic epoxy resin or an alicyclic epoxy resin having an aromatic epoxy resin content of 5 wt% or less, which joins the placement portion and the sealing portion;
A semiconductor device comprising: 前記脂環式エポキシ樹脂は、その厚みを１０ｍｍにした場合における、４００ｎｍの波長域に発光ピーク波長を有する光の透過率が９５％以上である、ことを特徴とする請求項４に記載の半導体装置。   5. The semiconductor according to claim 4, wherein the alicyclic epoxy resin has a light transmittance of 95% or more having a light emission peak wavelength in a wavelength region of 400 nm when the thickness is 10 mm. apparatus. 前記脂環式エポキシ樹脂は、高圧水銀ランプ照射（５０ｍＷ／ｃｍ２×１０日）後における、４００ｎｍの波長域に発光ピーク波長を有する光の透過率が９０％以上である、ことを特徴とする請求項４又は請求項５に記載の半導体装置。 The alicyclic epoxy resin has a transmittance of 90% or more of light having an emission peak wavelength in a wavelength region of 400 nm after irradiation with a high-pressure mercury lamp (50 mW / cm 2 × 10 days). 6. The semiconductor device according to claim 4 or 5. 前記脂環式エポキシ樹脂は分子量が５００以下である、ことを特徴とする請求項４乃至請求項６のいずれか一項に記載の半導体装置。   The semiconductor device according to claim 4, wherein the alicyclic epoxy resin has a molecular weight of 500 or less. 請求項１乃至請求項７のいずれか一項に記載の半導体装置において、さらに、前記配置部と前記封止部とで囲まれた空間に吸着剤を備えたことを特徴とする半導体装置。   8. The semiconductor device according to claim 1, further comprising an adsorbent in a space surrounded by the placement portion and the sealing portion. 9. 前記吸着剤は、ゼオライトであることを特徴とする請求項８に記載の半導体装置。   The semiconductor device according to claim 8, wherein the adsorbent is zeolite. 前記吸着剤の孔径は、前記樹脂から生じるガスを構成する分子の径よりも大きい、ことを特徴とする請求項８に記載の半導体装置。   9. The semiconductor device according to claim 8, wherein the pore diameter of the adsorbent is larger than the diameter of molecules constituting the gas generated from the resin. 請求項１乃至請求項１０のいずれか一項に記載の半導体装置において、さらに、前記配置部と前記封止部とで囲まれた空間に光触媒を備えたことを特徴とする半導体装置。   11. The semiconductor device according to claim 1, further comprising a photocatalyst in a space surrounded by the arrangement portion and the sealing portion. 請求項１乃至請求項１１のいずれか一項に記載の半導体装置において、さらに、マイクロプリズムを備え、前記発光素子がレーザダイオードである、ことを特徴とする半導体装置。   12. The semiconductor device according to claim 1, further comprising a microprism, wherein the light emitting element is a laser diode. 請求項１乃至請求項１２のいずれか一項に記載の半導体装置において、さらに、受光素子を備え、前記発光素子がレーザダイオードである、ことを特徴とする半導体装置。   The semiconductor device according to any one of claims 1 to 12, further comprising a light receiving element, wherein the light emitting element is a laser diode. 前記発光素子は、窒化物系半導体発光素子である、ことを特徴とする請求項１乃至請求項１３のいずれか一項に記載の半導体装置。   The semiconductor device according to claim 1, wherein the light emitting element is a nitride semiconductor light emitting element.
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