JP2007292544A - Magnetic device - Google Patents

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JP2007292544A
JP2007292544A JP2006119210A JP2006119210A JP2007292544A JP 2007292544 A JP2007292544 A JP 2007292544A JP 2006119210 A JP2006119210 A JP 2006119210A JP 2006119210 A JP2006119210 A JP 2006119210A JP 2007292544 A JP2007292544 A JP 2007292544A
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conductive layer
magnetic
layer
magnetic field
insulating layer
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Katsufumi Nagasu
勝文 長洲
Takuya Aizawa
卓也 相沢
Satoru Nakao
知 中尾
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Fujikura Ltd
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<P>PROBLEM TO BE SOLVED: To provide a magnetic device with a magnetic element, which is small and light and can be manufactured at a low cost. <P>SOLUTION: The magnetic device 10 comprises: a substrate 11 made of a semiconductor; a magnetic sensor 12 which is stacked on one surface side 11a of the substrate 11; and a magnetic field applying means 13 which is stacked on the magnetic sensor 12. The magnetic field applying means 13 has a first conductive layer 15 and a second conductive layer 16 so as to sandwich a first insulation layer (insulating layer) 14, and these first conductive layer 15 and second conductive layer 16 are electrically connected by a connection layer 17 made of a conductive material for example. The magnetic field applying means 13 with above-mentioned structure is made up in the form of a coil composed of the first conductive layer 15, the second conductive layer 16 and the connection layer 17. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、磁気センサを備えた磁気デバイスに関する。   The present invention relates to a magnetic device including a magnetic sensor.

近年、コスト低減やチップ部品の削減を目的に、磁気インピーダンス素子等の誘導素子を、例えば半導体などの基板に集積化したものが提案されている。このような磁気インピーダンス素子を磁気センサとして利用する際には、インピーダンス変化の特性に起因して、磁気インピーダンス素子に対してバイアス磁界を印加することが必要である。   In recent years, in order to reduce costs and chip parts, an inductive element such as a magnetic impedance element integrated on a substrate such as a semiconductor has been proposed. When such a magnetic impedance element is used as a magnetic sensor, it is necessary to apply a bias magnetic field to the magnetic impedance element due to the characteristics of impedance change.

磁気インピーダンス素子に対してバイアス磁界を印加する手段としては、例えば、磁気インピーダンス素子の近傍に磁石を配置することが考えられる（特許文献１）。しかし、こうした磁石によるバイアス磁界の印加は、個々の磁石によって磁界強度が一定せず、安定して一定値のバイアス磁界を印加することが困難なために、磁気センサに適用するには課題がある。   As a means for applying a bias magnetic field to the magneto-impedance element, for example, a magnet may be disposed in the vicinity of the magneto-impedance element (Patent Document 1). However, the application of a bias magnetic field by such a magnet has a problem in application to a magnetic sensor because the magnetic field strength is not constant by each magnet and it is difficult to stably apply a constant bias magnetic field. .

一方、磁気インピーダンス素子に対して、一定の強度で安定してバイアス磁界を印加する手段として、磁気インピーダンス素子の近傍にスパイラル状やコイル状の導電層を形成し、この導電層に通電することによって、バイアス磁界を発生させる方法も知られている（特許文献２）。特に、コイル状に形成した導電層の巻き線中心軸に沿って磁気インピーダンス素子を配置した磁気センサは、磁気インピーダンス素子に対して強いバイアス磁界を安定して印加できる特性から、高精度な磁気センサとして好適である。
特開２００２−４３６４９号公報 特開２００１−２２１８３８号公報 On the other hand, as a means for stably applying a bias magnetic field to the magneto-impedance element with a constant strength, a spiral or coil-like conductive layer is formed in the vicinity of the magneto-impedance element, and the conductive layer is energized. A method for generating a bias magnetic field is also known (Patent Document 2). In particular, a magnetic sensor in which a magnetic impedance element is arranged along the central axis of a coiled conductive layer is a highly accurate magnetic sensor because it can stably apply a strong bias magnetic field to the magnetic impedance element. It is suitable as.
JP 2002-43649 A Japanese Patent Application Laid-Open No. 2001-221838

しかしながら、磁気インピーダンス素子に対してバイアス磁界を印加するために、磁気インピーダンス素子の周囲にコイル状の磁界印加手段を形成する場合、従来はこうしたコイルを別体で形成しておいて、磁気インピーダンス素子の周囲に配置するなどしていたため、磁気デバイス全体の外形が大きくなってしまい、磁気デバイスを搭載する機器の小型化、薄型化の障害になるといった課題があった。   However, in order to apply a bias magnetic field to the magneto-impedance element, when a coiled magnetic field applying means is formed around the magneto-impedance element, conventionally, such a coil is formed separately, and the magneto-impedance element Therefore, there has been a problem that the outer shape of the entire magnetic device becomes large, which obstructs the downsizing and thinning of the equipment on which the magnetic device is mounted.

本発明は、上記事情に鑑みてなされたもので、高感度で、かつ小型化、軽量化とともに低コスト化も図ることが可能な、磁気素子を備えた磁気デバイスを提供することを目的とする。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a magnetic device including a magnetic element that is highly sensitive and can be reduced in size, weight, and cost. .

本発明の請求項１に記載の磁気デバイスは、半導体からなる基板の一面側に配された磁気センサと、前記一面側にあって前記磁気センサと重なるように順に配された第一導電層、絶縁層および第二導電層とを少なくとも備え、前記第一導電層と前記第二導電層が電気的に接続されてコイル形状をなすことを特徴とする。
本発明の請求項２に記載の磁気デバイスは、半導体からなる基板の一面側に配された磁気センサと、前記一面側にあって前記磁気センサと重なるように配された第一導電層と、前記基板の他面側に配された第二導電層とを備え、前記第一導電層と前記第二導電層が電気的に接続されて前記磁気センサを包み込むコイル形状をなすことを特徴とする。 The magnetic device according to claim 1 of the present invention is a magnetic sensor disposed on one surface side of a substrate made of a semiconductor, and a first conductive layer disposed in order so as to overlap the magnetic sensor on the one surface side, An insulating layer and a second conductive layer are provided, and the first conductive layer and the second conductive layer are electrically connected to form a coil shape.
A magnetic device according to claim 2 of the present invention is a magnetic sensor disposed on one surface side of a substrate made of a semiconductor, a first conductive layer disposed on the one surface side so as to overlap the magnetic sensor, And a second conductive layer disposed on the other surface side of the substrate, wherein the first conductive layer and the second conductive layer are electrically connected to form a coil shape enclosing the magnetic sensor. .

本発明の磁気デバイスによれば、磁気デバイスは、第一導電層、第二導電層および連結層からなるコンパクトなコイル形状の磁界印加手段を１チップで小さく形成し、かつ半導体からなる基板の一面側に重ねて磁気センサを配することによって、コイル形状を構成できるので、小型、薄型の磁気デバイスを得ることができる。   According to the magnetic device of the present invention, the magnetic device has a compact coil-shaped magnetic field applying means composed of the first conductive layer, the second conductive layer, and the coupling layer formed in one chip, and is provided on one surface of the substrate made of a semiconductor. By arranging the magnetic sensor on the side, the coil shape can be configured, so that a small and thin magnetic device can be obtained.

以下、本発明に係る磁気デバイスの一例を図面に基づいて説明する。なお、本発明はこのような実施形態に限定されるものではない。図１は、本発明の磁気デバイス（磁気センサ）の一例を示す斜視図である。また、図２は、図１に示した磁気デバイスのＡ−Ａ線における断面図である。本発明の磁気デバイス１０は、半導体からなる基板１１と、この基板１１の一面側１１ａに重ねて配された磁気センサ１２と、磁気センサ１２に重なるように配された磁界印加手段１３を備えている。   Hereinafter, an example of a magnetic device according to the present invention will be described with reference to the drawings. Note that the present invention is not limited to such an embodiment. FIG. 1 is a perspective view showing an example of a magnetic device (magnetic sensor) of the present invention. 2 is a cross-sectional view taken along line AA of the magnetic device shown in FIG. A magnetic device 10 according to the present invention includes a substrate 11 made of a semiconductor, a magnetic sensor 12 disposed so as to overlap one surface 11 a of the substrate 11, and a magnetic field applying unit 13 disposed so as to overlap the magnetic sensor 12. Yes.

磁界印加手段１３は、第一絶縁層（絶縁層）１４を挟んで、第一導電層１５と第二導電層１６とを備え、これら第一導電層１５と第二導電層１６とが、例えば導電材からなる連結層１７によって電気的接続される。かかる構成によって、磁界印加手段１３は、第一導電層１５、第二導電層１６および連結層１７からなるコイル形状を構成する。   The magnetic field applying unit 13 includes a first conductive layer 15 and a second conductive layer 16 with a first insulating layer (insulating layer) 14 interposed therebetween. The first conductive layer 15 and the second conductive layer 16 are, for example, Electrical connection is made by a coupling layer 17 made of a conductive material. With this configuration, the magnetic field applying unit 13 forms a coil shape including the first conductive layer 15, the second conductive layer 16, and the coupling layer 17.

そして、このコイル形状を構成する磁界印加手段１３の両端１３ａ，１３ｂの間に電流を流すことによって、磁界印加手段１３に磁界が発生し、隣接する磁気センサ１２に対して、一方向に向いたバイアス磁界Ｍとして印加される。   A magnetic field is generated in the magnetic field application unit 13 by flowing a current between both ends 13a and 13b of the magnetic field application unit 13 constituting the coil shape, and the magnetic field application unit 13 is directed in one direction with respect to the adjacent magnetic sensor 12. Applied as a bias magnetic field M.

このような構成によって、磁気デバイス１０は、第一導電層１５、第二導電層１６および連結層１７からなるコンパクトなコイル形状の磁界印加手段１３を１チップで小さく形成できるので、磁気センサ１２と、この磁気センサ１２にバイアス磁界を印加する磁界印加手段１３を備えた磁気デバイス１０を小型、薄型に形成することが可能になる。   With such a configuration, the magnetic device 10 can form the compact coil-shaped magnetic field applying means 13 composed of the first conductive layer 15, the second conductive layer 16, and the coupling layer 17 in a single chip. The magnetic device 10 having the magnetic field applying means 13 for applying a bias magnetic field to the magnetic sensor 12 can be formed small and thin.

基板１１は、半導体基板、例えば、シリコンウェハから形成されていれば良い。基板１１の一面側１１ａには、例えばシリコンウェハの表面を酸化させたパッシベーション膜（酸化絶縁膜）１８を形成すればよい。磁気センサ１２と第一導電層１５との間には第二絶縁層２１が形成されていれば良い。また、第一絶縁層１４に重ねて、第二導電層１６を覆う第三絶縁層２２が形成されていればよい。これら第一絶縁層１４、第二絶縁層２１および第三絶縁層２２は、例えば、絶縁性の樹脂等から構成されていれば良い。また、第一絶縁層１４、第二絶縁層２１および第三絶縁層２２は、それぞれ別体に形成しても、一体の絶縁層として形成しても良い。   The substrate 11 may be formed from a semiconductor substrate, for example, a silicon wafer. For example, a passivation film (oxide insulating film) 18 obtained by oxidizing the surface of a silicon wafer may be formed on the one surface 11 a of the substrate 11. The second insulating layer 21 may be formed between the magnetic sensor 12 and the first conductive layer 15. Moreover, the 3rd insulating layer 22 which overlaps with the 1st insulating layer 14 and covers the 2nd conductive layer 16 should just be formed. The first insulating layer 14, the second insulating layer 21, and the third insulating layer 22 may be made of, for example, an insulating resin. Further, the first insulating layer 14, the second insulating layer 21, and the third insulating layer 22 may be formed separately or may be formed as an integral insulating layer.

磁気センサ１２は、両端で電流Ｗが印加され、外部磁界の強度や方向に応じて電流Ｗの出力電圧値が変動する。この出力電圧値の変動を検出することによって、外部磁界の強度や方向を検出することができる。こうした磁気センサ１２は、例えば磁性基板の表面に、軟磁性膜を形成したものであればよい。第一導電層１５や第二導電層１６は、導電性に優れた材料、例えば、Ｃｕ，Ａｌ，Ａｕなどから形成されれば良い。また、連結層１７は、第一絶縁層１４に開口を形成し、この開口に、例えば導電ペーストなどを充填することによって形成すればよい。   The magnetic sensor 12 is applied with a current W at both ends, and the output voltage value of the current W varies according to the strength and direction of the external magnetic field. By detecting the change in the output voltage value, the intensity and direction of the external magnetic field can be detected. Such a magnetic sensor 12 may be any sensor as long as a soft magnetic film is formed on the surface of a magnetic substrate, for example. The first conductive layer 15 and the second conductive layer 16 may be formed of a material having excellent conductivity, such as Cu, Al, Au, or the like. The connection layer 17 may be formed by forming an opening in the first insulating layer 14 and filling the opening with, for example, a conductive paste.

次に、本発明に係る磁気デバイスの別な一例を図面に基づいて説明する。図３は、本発明の磁気デバイス（磁気センサ）の別な一例を示す斜視図である。また、図４（ａ）は、図３に示した磁気デバイスのＢ−Ｂ線における断面図であり、図４（ｂ）はＣ−Ｃ線における断面図である。本発明の磁気デバイス３０は、半導体からなる基板３１と、この基板３１の一面側３１ａに重ねて配された磁気センサ３２とを有する。また、磁気センサ３２に重なるように配された第一導電層３５と、基板３１の他面側３１ｂに重ねて配された第二導電層３６とを有する。また、第一導電層３５と第二導電層３６とは、例えば導電材からなり基板３１を貫通する連結層３７によって電気的接続される。   Next, another example of the magnetic device according to the present invention will be described with reference to the drawings. FIG. 3 is a perspective view showing another example of the magnetic device (magnetic sensor) of the present invention. 4A is a cross-sectional view taken along line BB of the magnetic device shown in FIG. 3, and FIG. 4B is a cross-sectional view taken along line CC. The magnetic device 30 according to the present invention includes a substrate 31 made of a semiconductor and a magnetic sensor 32 disposed so as to overlap one surface side 31 a of the substrate 31. In addition, the first conductive layer 35 disposed to overlap the magnetic sensor 32 and the second conductive layer 36 disposed to overlap the other surface side 31 b of the substrate 31 are provided. The first conductive layer 35 and the second conductive layer 36 are electrically connected by a connecting layer 37 made of, for example, a conductive material and penetrating the substrate 31.

かかる構成によって、第一導電層３５、第二導電層３６および連結層３７からなるコイル形状をなす磁界印加手段３３を構成する。こうした磁界印加手段３３は、コイル形状の略中心に磁気センサ３２が配され、この磁気センサ３２の周囲を包むように第一導電層３５、第二導電層３６および連結層３７が形成されている。   With this configuration, the magnetic field applying unit 33 having a coil shape including the first conductive layer 35, the second conductive layer 36, and the coupling layer 37 is configured. In the magnetic field applying means 33, the magnetic sensor 32 is arranged at the approximate center of the coil shape, and the first conductive layer 35, the second conductive layer 36 and the coupling layer 37 are formed so as to wrap around the magnetic sensor 32.

こうしたコイル形状を構成する磁界印加手段３３の両端３３ａ，３３ｂの間に電流を流すことによって、磁界印加手段３３に磁界が発生し、磁界印加手段３３のコイル形状の中心に配された磁気センサ３２に対して、一方向に向いたバイアス磁界Ｍが印加される。   A magnetic field is generated in the magnetic field applying means 33 by passing a current between both ends 33a and 33b of the magnetic field applying means 33 constituting such a coil shape, and the magnetic sensor 32 disposed at the center of the coil shape of the magnetic field applying means 33. In contrast, a bias magnetic field M directed in one direction is applied.

以上の構成によって、磁気デバイス３０は、第一導電層３５、第二導電層３６および連結層３７からなるコンパクトなコイル形状の磁界印加手段３３を１チップで小さく形成でき、コイル形状の略中心に配された磁気センサ３２にバイアス磁界を印加する磁界印加手段３３を備えた磁気デバイス３０を小型、薄型に形成することが可能になる。   With the above configuration, the magnetic device 30 can form the compact coil-shaped magnetic field applying means 33 composed of the first conductive layer 35, the second conductive layer 36, and the coupling layer 37 with a single chip, and at the approximate center of the coil shape. The magnetic device 30 provided with the magnetic field applying means 33 for applying a bias magnetic field to the magnetic sensor 32 arranged can be formed small and thin.

基板３１は、半導体基板、例えば、シリコンウェハから形成されていれば良い。基板３１の一面側３１ａには、例えばシリコンウェハの表面を酸化させたパッシベーション膜（酸化絶縁膜）３８を形成すればよい。磁気センサ３２と第一導電層３５との間には第一絶縁層４１が形成されていれば良い。また、第一絶縁層４１に重ねて、第一導電層３５を覆う第二絶縁層４２が形成されていればよい。   The substrate 31 may be formed from a semiconductor substrate, for example, a silicon wafer. For example, a passivation film (oxide insulating film) 38 obtained by oxidizing the surface of a silicon wafer may be formed on the one surface side 31 a of the substrate 31. It suffices if the first insulating layer 41 is formed between the magnetic sensor 32 and the first conductive layer 35. Further, the second insulating layer 42 may be formed so as to overlap the first insulating layer 41 and cover the first conductive layer 35.

また、基板３１の他面側３１ｂと第二導電層３６との間には、第三絶縁層４３が形成されていれば良い。さらに、第三絶縁層４３に重ねて、第二導電層３６を覆う第四絶縁層４４が形成されていればよい。   Further, the third insulating layer 43 may be formed between the other surface side 31 b of the substrate 31 and the second conductive layer 36. Furthermore, the fourth insulating layer 44 may be formed so as to overlap the third insulating layer 43 and cover the second conductive layer 36.

これら第一絶縁層４１、第二絶縁層４２、第三絶縁層４３および第四絶縁層４４は、例えば、絶縁性の樹脂等から構成されていれば良い。また、第一絶縁層４１、第二絶縁層４２、第三絶縁層４３および第四絶縁層４４は、それぞれ別体に形成しても、一体の絶縁層として形成しても良い。   These first insulating layer 41, second insulating layer 42, third insulating layer 43, and fourth insulating layer 44 may be made of, for example, an insulating resin. The first insulating layer 41, the second insulating layer 42, the third insulating layer 43, and the fourth insulating layer 44 may be formed separately or as an integrated insulating layer.

磁気センサ３２は、両端で電流Ｗが印加され、外部磁界の強度や方向に応じて電流Ｗの出力電圧値が変動する。この出力電圧値の変動を検出することによって、外部磁界の強度や方向を検出することができる。こうした磁気センサ３２は、例えば磁性基板の表面に、軟磁性膜を形成したものであればよい。第一導電層３５や第二導電層３６は、導電性に優れた材料、例えば、Ｃｕ，Ａｌ，Ａｕなどから形成されれば良い。また、連結層３７は、第一絶縁層４１、基板３１および第三絶縁層４３を貫通する開口４５を形成し、この開口４５に、例えば導電ペーストなどを充填することによって形成すればよい。   The magnetic sensor 32 is applied with a current W at both ends, and the output voltage value of the current W varies according to the strength and direction of the external magnetic field. By detecting the change in the output voltage value, the intensity and direction of the external magnetic field can be detected. Such a magnetic sensor 32 may be anything as long as a soft magnetic film is formed on the surface of a magnetic substrate, for example. The first conductive layer 35 and the second conductive layer 36 may be formed of a material having excellent conductivity, such as Cu, Al, Au, or the like. The connection layer 37 may be formed by forming an opening 45 that penetrates the first insulating layer 41, the substrate 31, and the third insulating layer 43, and filling the opening 45 with, for example, a conductive paste.

次に、本発明の磁気デバイスの製造方法の一例を示す。この一例では、図３、図４に示したような、磁気センサを包み込む第一導電層、第二導電層および連結層からなるコイル形状の磁界印加手段を形成した磁気デバイスの製造方法を、図５、図６に例示する。なお、図５、図６のＡ列は、図３に示す磁気デバイスのＢ−Ｂ線における断面を示し、図５、図６のＢ列は、図３に示す磁気デバイスのＤ−Ｄ線における断面を示す。また、図５、図６のＡ列はＢ列よりも幅を縮小して示している。   Next, an example of the manufacturing method of the magnetic device of this invention is shown. In this example, a method of manufacturing a magnetic device in which a coil-shaped magnetic field applying means including a first conductive layer, a second conductive layer, and a coupling layer that encloses a magnetic sensor as shown in FIGS. 5 and FIG. 5 and FIG. 6 shows a cross section taken along line BB of the magnetic device shown in FIG. 3, and FIG. 5 and FIG. 6 shows a line B taken along line DD of the magnetic device shown in FIG. A cross section is shown. 5 and FIG. 6 are shown with a width smaller than that of the B column.

まず、例えばシリコンウェハなどの半導体からなる基板３１を用意し、この基板３１に後工程で連結層を形成するための開口４５を形成する（図５（ａ）参照）。この開口４５に、例えば導電ペーストなどを充填し、連結層３７を形成する（図５（ｂ）参照）。基板３１の一面側３１ａに磁気センサ（磁性膜）３２を形成する（図５（ｃ）参照）。この磁気センサ３２を覆うように第一絶縁層４１を形成する（図５（ｄ）参照）。   First, a substrate 31 made of a semiconductor such as a silicon wafer is prepared, and an opening 45 for forming a connection layer in a later process is formed in the substrate 31 (see FIG. 5A). The opening 45 is filled with a conductive paste, for example, to form a coupling layer 37 (see FIG. 5B). A magnetic sensor (magnetic film) 32 is formed on one surface side 31a of the substrate 31 (see FIG. 5C). A first insulating layer 41 is formed so as to cover the magnetic sensor 32 (see FIG. 5D).

そして、第一絶縁層４１の連結層３７に対応する部分に開口４１ａを形成する（図５（ｅ）参照）。第一絶縁層４１の上に第一導電層３５を形成するととともに、開口４１ａを介して第一導電層３５と連結層３７とを電気的に接続する（図５（ｆ）参照）。第一導電層３５は、例えば、フォトリソグラフィック法によりレジストマスクを形成した後、メッキによって導電体を積層すればよい。この後、第一導電層３５を覆う第二絶縁層４２を形成する（図６（ａ）参照）。   And the opening 41a is formed in the part corresponding to the connection layer 37 of the 1st insulating layer 41 (refer FIG.5 (e)). The first conductive layer 35 is formed on the first insulating layer 41, and the first conductive layer 35 and the coupling layer 37 are electrically connected through the opening 41a (see FIG. 5 (f)). The first conductive layer 35 may be formed by, for example, depositing a conductor by plating after forming a resist mask by photolithography. Thereafter, a second insulating layer 42 covering the first conductive layer 35 is formed (see FIG. 6A).

次に、基板３１の他面側３１ｂに第三絶縁層４３を形成する（図６（ｂ）参照）。そして、第三絶縁層４３の連結層３７に対応する部分に開口４３ａを形成する（図６（ｃ）参照）。第三絶縁層４３の上に第二導電層３６を形成するととともに、開口４３ａを介して第二導電層３６と連結層３７とを電気的に接続する（図６（ｄ）参照）。   Next, the third insulating layer 43 is formed on the other surface side 31b of the substrate 31 (see FIG. 6B). And the opening 43a is formed in the part corresponding to the connection layer 37 of the 3rd insulating layer 43 (refer FIG.6 (c)). The second conductive layer 36 is formed on the third insulating layer 43, and the second conductive layer 36 and the coupling layer 37 are electrically connected through the opening 43a (see FIG. 6D).

これにより、第一導電層３５、第二導電層３６および連結層３７からなるコイル形状をなす磁界印加手段３３が形成される。そして、磁気センサ３２の周囲を包むコイル形状を構成する第一導電層３５、第二導電層３６および連結層３７が形成される。第二導電層３６は、例えば、フォトリソグラフィック法によりレジストマスクを形成した後、メッキによって導電体を積層すればよい。この後、第二導電層３６を覆う第四絶縁層４４を形成すれば、本発明の磁気デバイス３０は完成する（図６（ｅ）参照）。   Thereby, the magnetic field applying means 33 having a coil shape including the first conductive layer 35, the second conductive layer 36, and the coupling layer 37 is formed. Then, a first conductive layer 35, a second conductive layer 36, and a coupling layer 37 that form a coil shape surrounding the magnetic sensor 32 are formed. The second conductive layer 36 may be formed by, for example, depositing a conductor by plating after forming a resist mask by photolithography. Then, if the 4th insulating layer 44 which covers the 2nd conductive layer 36 is formed, the magnetic device 30 of this invention will be completed (refer FIG.6 (e)).

本発明の磁気デバイスの一例を示す斜視図である。It is a perspective view which shows an example of the magnetic device of this invention. 図１のＡ−Ａ線での断面図である。It is sectional drawing in the AA of FIG. 本発明の磁気デバイスの他の一例を示す斜視図である。It is a perspective view which shows another example of the magnetic device of this invention. 図３のＢ−Ｂ線での断面図である。It is sectional drawing in the BB line of FIG. 本発明の磁気デバイスの製造方法の一例を示す断面図である。It is sectional drawing which shows an example of the manufacturing method of the magnetic device of this invention. 本発明の磁気デバイスの製造方法の一例を示す断面図である。It is sectional drawing which shows an example of the manufacturing method of the magnetic device of this invention.

符号の説明Explanation of symbols

１０ 磁気デバイス、１１ 基板、１２ 磁気センサ、１３ 磁界印加手段、１４ 第一絶縁層（絶縁層）、１５ 第一導電層、１６ 第二導電層、１７ 連結層。


DESCRIPTION OF SYMBOLS 10 Magnetic device, 11 Board | substrate, 12 Magnetic sensor, 13 Magnetic field application means, 14 1st insulating layer (insulating layer), 15 1st conductive layer, 16 2nd conductive layer, 17 connection layer.


Claims (2)

半導体からなる基板の一面側に配された磁気センサと、前記一面側にあって前記磁気センサと重なるように順に配された第一導電層、絶縁層および第二導電層とを少なくとも備え、前記第一導電層と前記第二導電層が電気的に接続されてコイル形状をなすことを特徴とする磁気デバイス。   A magnetic sensor disposed on one surface side of a substrate made of semiconductor; and at least a first conductive layer, an insulating layer, and a second conductive layer disposed on the one surface side so as to overlap the magnetic sensor, A magnetic device, wherein the first conductive layer and the second conductive layer are electrically connected to form a coil shape. 半導体からなる基板の一面側に配された磁気センサと、前記一面側にあって前記磁気センサと重なるように配された第一導電層と、前記基板の他面側に配された第二導電層とを備え、前記第一導電層と前記第二導電層が電気的に接続されて前記磁気センサを包み込むコイル形状をなすことを特徴とする磁気デバイス。
A magnetic sensor disposed on one surface side of a substrate made of a semiconductor; a first conductive layer disposed on the one surface side so as to overlap the magnetic sensor; and a second conductive material disposed on the other surface side of the substrate. A magnetic device, wherein the first conductive layer and the second conductive layer are electrically connected to form a coil that encloses the magnetic sensor.
JP2006119210A 2006-04-24 2006-04-24 Magnetic device Withdrawn JP2007292544A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009147925A1 (en) * 2008-06-06 2009-12-10 株式会社村田製作所 Electronic component
WO2014054371A1 (en) * 2012-10-04 2014-04-10 愛知製鋼株式会社 Magneto-impedance element and manufacturing method therefor
JP2015141945A (en) * 2014-01-27 2015-08-03 太陽誘電株式会社 coil component
JP2016172057A (en) * 2016-06-01 2016-09-29 株式会社三洋物産 Game machine
CN110426660A (en) * 2019-09-11 2019-11-08 昆山航磁微电子科技有限公司 GMI transducer sensitivity improves structure and its operating method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009147925A1 (en) * 2008-06-06 2009-12-10 株式会社村田製作所 Electronic component
WO2014054371A1 (en) * 2012-10-04 2014-04-10 愛知製鋼株式会社 Magneto-impedance element and manufacturing method therefor
JP5958548B2 (en) * 2012-10-04 2016-08-02 愛知製鋼株式会社 Magneto-impedance element and manufacturing method thereof
JP2015141945A (en) * 2014-01-27 2015-08-03 太陽誘電株式会社 coil component
JP2016172057A (en) * 2016-06-01 2016-09-29 株式会社三洋物産 Game machine
CN110426660A (en) * 2019-09-11 2019-11-08 昆山航磁微电子科技有限公司 GMI transducer sensitivity improves structure and its operating method

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