JP2007281210A - Method and apparatus for slicing substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To sufficiently supply a slicing fluid to a processing point even in slicing a large-diameter ingot by reducing the cut amount of a blade into the ingot as much as possible. <P>SOLUTION: The ingot S is rotatably held around a shaft. The ingot S is sliced in rounds by combining a cutting operation for allowing an external peripheral blade 230 having a rotary shaft (spindle shaft 221) arranged in parallel to the shaft direction of the ingot S to cut, so that the blade edge of the external blade 232 can reach the diameter center of the ingot S; and a rotary operation of rotating the ingot S at 180° or more. A cutting edge protruding quantity R of the external blade 230 can be made small to the degree equivalent to the radius of the ingot S. As a result, the cutting liquid can easily reach a processing point, and a large-diameter ingot can be cut without any trouble. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate cutting method and a substrate cutting apparatus that can be suitably applied to, for example, obtaining a disk-shaped semiconductor wafer by slicing a single crystal silicon ingot.

  A semiconductor wafer is manufactured by thinly slicing a cylindrical single crystal silicon ingot. As a cutting means, conventionally, an inner peripheral blade blade in which a grindstone is fixed to an inner peripheral edge of a doughnut-shaped substrate made of a thin plate is used. It was used (refer patent document 1). By the way, in the semiconductor field, in order to increase the production efficiency of semiconductor chips, there is a tendency to increase the diameter of the semiconductor wafer by increasing the diameter of the ingot. In order to cut a large-diameter ingot with an inner peripheral blade, the inner peripheral blade itself needs to be enlarged, but there is a limit to increasing the strength in order to ensure strength. For example, the strength of the inner peripheral blade was ensured until the diameter of the ingot was about 100 to 150 mm, but this was difficult. Therefore, a wire saw has been proposed and put to practical use as means for cutting a large-diameter ingot (see Patent Document 2).

Japanese Unexamined Patent Publication No. 7-88836 JP-A-7-205141

  Cutting with a wire saw is performed by a method in which a plurality of wires arranged in parallel are cut into an ingot while reciprocating while supplying a processing liquid containing abrasive grains to the processing point. The wire saw is not configured to increase in size according to the size of the ingot like the inner peripheral blade, but has the advantage of being able to accommodate large diameter ingots by adjusting the incision length to the ingot Yes. However, when cutting a large-diameter ingot, it is difficult for the machining fluid to reach the machining point between cutting to the vicinity of the center of the ingot and further cutting to the end, so that the frictional heat In addition, the cutting resistance may increase and the wire saw may be cut. Such a tendency becomes more prominent as the ingot becomes larger, and it has been judged that it is not practical for large-diameter ingots having a diameter exceeding 300 mm (for example, a diameter of 400 mm or more).

  On the other hand, when cutting a large-diameter ingot with an outer peripheral blade with a grindstone fixed to the outer peripheral edge of the substrate, the problem of insufficient supply of the machining fluid (in the case of the outer peripheral blade) is the same. It was. Also, with the outer peripheral blade, the blade tip extension amount (corresponding to the radius from the rotation center to the outer peripheral edge) corresponds to the diameter of the ingot, so the outer diameter is more than twice the diameter of the ingot, and the thickness is Therefore, it is disadvantageous in increasing the number of semiconductor wafers to be cut from the ingot by cutting with a blade as thin as possible (for example, about 0.1 to 0.3 mm). It cannot be adopted as a means.

  Therefore, according to the present invention, the cutting amount of the blade can be reduced as much as possible, so that the cutting fluid can be sufficiently supplied to the processing point even when cutting a large-diameter ingot, the blade is thick, and It is an object of the present invention to provide a substrate cutting method and a substrate cutting apparatus capable of cutting an ingot with a blade having a sufficient strength that is suppressed from increasing in size.

  The substrate cutting method of the present invention is a substrate cutting method for obtaining a disk-shaped substrate by slicing a cylindrical substrate material into a circular shape, and holding the substrate material rotatably around an axis, The outer peripheral edge of the rotating outer peripheral blade is provided with an outer peripheral blade made of a grindstone, has a blade tip extension amount that corresponds to the radius of the substrate material, and the rotation axis is set parallel to the axial direction of the substrate material By combining the cutting operation of cutting the blade with respect to the substrate material until the cutting edge of the outer peripheral blade reaches at least the diameter center of the substrate material, and the substrate material rotating operation of rotating the substrate material by 180 ° or more, It is characterized by cutting the substrate material. The substrate material of the present invention is particularly assumed to be a single crystal silicon ingot or the like which is a material for the semiconductor wafer described above.

  According to the cutting method of the present invention, the substrate material can be sliced into a circular shape by appropriately combining the operation of cutting the outer peripheral blade to the center of the diameter of the substrate material and the operation of rotating the substrate material by 180 ° or more. . By rotating the substrate material around the axis, the cutting amount of the outer peripheral blade to the substrate material may be the radius of the substrate material, and therefore, the cutting edge amount of the outer peripheral blade blade should be equal to or greater than the radius of the substrate material. is there. In the case of using an outer peripheral blade, the blade tip diameter has conventionally been required to be equivalent to the diameter of the substrate material, so the diameter of the outer peripheral blade is more than twice that of the substrate material. Although it was difficult, in the present invention, the diameter of the outer peripheral blade can be suppressed to be equivalent to the radius of the substrate material.

  Thus, since the cutting amount of the outer peripheral blade into the substrate material can be made as small as possible, the cutting fluid should be made a sufficient processing point even when cutting a large-diameter substrate material (for example, a diameter of 400 mm or more). Can be supplied. This means that since the distance from the cut opening to the processing point is at most the center of the diameter of the substrate material, the distance between them is short and the cutting fluid can be easily reached. Also, since the outer peripheral blade can be small and thin, the outer peripheral blade can be sufficiently strong. Further, by thinning the outer peripheral blade, the number of substrates cut out from the substrate material can be increased, and the production efficiency is improved.

  As a specific example of the combination of the above cutting operation and the substrate material rotating operation, the outer peripheral blade blade reaches the center of the diameter of the substrate material without rotating the substrate material at first. There is a method of cutting the remaining portion by rotating the substrate material while continuing to rotate the outer peripheral blade blade. In addition, there is also a method of rotating the substrate material from the beginning and cutting the outer peripheral blade with respect to the substrate material until the cutting edge of the outer peripheral blade reaches the diameter center of the substrate material.

  Next, the substrate cutting apparatus of the present invention is an apparatus that can suitably carry out the above-described cutting method of the present invention, comprising a substrate holding means for holding a substrate material rotatably about an axis, and a disk-shaped base material. A rotary outer peripheral blade with an outer peripheral edge provided by a grindstone at the outer peripheral edge, having a blade tip extension amount corresponding to the radius of the substrate material, and a rotation axis set parallel to the axial direction of the substrate material And an advancing / retreating means for advancing / retreating the outer peripheral blade with respect to the substrate material.

  According to the present invention, since the substrate material is cut by appropriately combining the cutting operation for cutting the outer peripheral blade into the substrate material and the substrate material rotation operation for rotating the substrate material by 180 ° or more, the blade cutting amount can be made as small as possible. Therefore, even when cutting a large-diameter ingot, the cutting fluid can be sufficiently supplied to the processing point, and the blade can be made thicker and suppressed in size and has sufficient strength. There is an effect that the ingot can be cut.

Hereinafter, an embodiment according to the present invention will be described with reference to the drawings.
[1] Ingot Cutting Device An ingot cutting device (substrate cutting device) 1 according to an embodiment of the present invention will be described with reference to FIGS.
This ingot cutting apparatus 1 is a device for obtaining a large number of semiconductor wafers by slicing a substrate material such as a cylindrical silicon ingot in a ring shape. FIG. 1 is a perspective view and FIG. 2 is a plan view. The ingot cutting device 1 has a base 2 whose upper surface is horizontal, and the ingot is held on the base 2 from the front side in the X direction (lower side in FIG. 2) to the back side (upper side). A part (substrate holding means) 10 and a cutting part moving mechanism 30 are installed. The cutting part moving mechanism 30 reciprocates the cutting part 20 including the outer peripheral blade blade 230 in the Y direction. Hereinafter, each of these components will be described.

(A) Ingot holding portion The ingot holding portion 10 includes a holder 100 that holds the ingot S so as to be rotatable about the axis in a horizontally placed state in which the axis is along the Y direction, and the ingot S held on the holder 100 as a shaft. And an ingot rotation drive mechanism 110 that rotates around. As shown in FIG. 3, the holder 100 is provided on the base 2 with a pair of holder plate portions 101 extending in the Y direction fixed so as to form a V shape when viewed in the Y direction, and the holder plate portions 101. And a roller 102 extending in the Y direction. The holder plate portion 101 is a plate-like member that is longer than the ingot S to be cut, and has a slit (not shown) extending in the longitudinal direction. The roller 102 is rotatably supported while entering the slit. ing. The diameter of the roller 102 is sufficiently larger than the thickness of the holder plate portion 101, and the ingot S is held in a state of being rotatably mounted on the pair of rollers 102.

  The ingot rotation drive mechanism 110 has a stand 111 mounted on the base 2 so as to be finely adjustable in the vertical direction (Z direction) and the X direction. The stand 111 is a rectangular flat plate-like member that is arranged in parallel with the upper surface of the base 2 and is erected on the end of the base portion 112 on the holder 100 side (right side in FIG. 2). And a triangular support plate 113. A disc-shaped suction pad 114 disposed on the holder 100 side is supported at the top of the upper end of the support plate 113 so as to be rotatable about the Y direction. The suction pad 114 has the end face of the ingot S sucked concentrically, the rotation shaft passes through the support plate 113, and the gear 115 is fixed concentrically at the tip. A motor 116 is fixed to the base portion 112. A drive shaft of the motor 116 and a gear 115 are connected by a timing belt 117, and the suction pad 114 is rotated when the motor 116 is rotated.

  As shown in FIG. 1, an operation space 3 that opens to the side surface is formed below a portion of the base 2 where the base portion 112 is fixed. The base portion 112, that is, the stand 111, is located above the operation space 3. On the fixed plate portion 4, the position adjustment mechanism 120 is fixed so as to be movable in the Z direction and the X direction. As shown in FIGS. 2 and 4, the position adjusting mechanism 120 includes bolts 121 passed through elongated holes 112 a formed in the vicinity of the four corners of the base portion 112 from the bolt through holes 4 a of the fixing plate portion 4. An upper nut 122 screwed into the upper end portion of these bolts 121, a lower nut 123 screwed into the lower side of the fixing plate portion 4 of the bolt 121, and a plurality of potato screws 124 screwed into the base portion 112 from above. It is composed of In this case, the number of the screw 124 is four, and is disposed at a position relatively distant from the center of the base portion 112 and close to the inside of the pair of long holes 112a arranged in the X direction.

  According to this position adjusting mechanism 120, when each tread screw 124 whose tip (lower end) protrudes downward from the base portion 112 and contacts the upper surface of the fixed plate portion 4 is screwed in, the base portion 112 moves upward. The stand 111 is brought into contact with the upper nut 122, further screwed with each tread screw 124, the bolt 121 is raised through the upper nut 122 together with the base portion 112, and the lower nut 123 is in contact with the lower surface of the fixed plate portion 4. And the position in the X direction are fixed. Each braid screw 124 is strongly tightened so that the lower nut 123 is in pressure contact with the lower surface of the fixing plate portion 4 and the base portion 112 is in pressure contact with the upper nut 122, whereby the stand 111 is firmly fixed. .

  From this fixed state, loosening each potato screw 124 releases the fixed state, and the position of the stand 111 can be adjusted in the X direction along the long hole. Further, when the respective nut screws 124 are loosened and the respective upper nuts 122 are screwed in, the base portion 112 is lowered, and when the respective nut screws 124 are screwed in while the respective upper nuts 122 are loosened, the base portion 112 is raised. By appropriately performing such operations, the height of the stand 111 and the position in the X direction can be adjusted. After the position adjustment, the stand 111 is fixed to the fixing plate portion 4 by tightening the potato screws 124 again as described above. Note that the range of vertical movement of the stand 111 is adjusted by adjusting the screwing position of the lower nut 123.

  The adjustment of the height of the stand 111 and the position in the X direction is intended to adjust the position of the suction pad 114, and the suction pad 114 is adjusted in height and position in the X direction by operating the position adjustment mechanism 120 described above. Is made. The suction pad 114 sucks the end face of the ingot S by a vacuum action, and the suction pad 114 is connected to a vacuum pipe (not shown) for air suction. The suction pad 114 is disposed at a position facing one end surface of the ingot S held by the holder 100, and is adjusted in position concentrically with the ingot S by the position adjusting mechanism 120 and then operated in a vacuum, whereby the ingot S The end surfaces are sucked concentrically, and the ingot S is integrated with the suction pad 114. When the motor 116 is operated from this state, the rotation of the motor 116 is transmitted to the ingot S via the timing belt 117, the gear 115, and the suction pad 114, and the ingot S rotates about its axis. Thus, the ingot S is rotated around the axis by the ingot rotation drive mechanism 110.

(B) Cutting part The cutting part 20 reciprocates on the base 2 along the Y direction via a cutting part moving mechanism 30 described later. As shown in FIGS. 1 and 2, the cutting unit 20 includes a column 200 having an L shape when viewed in the Y direction, and a blade unit 210 attached to the front surface of the column 200. The blade unit 210 is mounted on the front surface of the column 200 via a slide plate 201 and a pair of left and right guide rails 202 extending in the Z direction so as to be movable up and down in the Z direction. 204 can be moved up and down.

  As shown in FIGS. 3 and 5, the blade unit 210 includes a cylindrical spindle 220 and an outer peripheral blade blade 230 attached to the spindle 220. A spindle shaft (rotating shaft) 221 is coaxially incorporated in the spindle 220, and a motor for rotating the spindle shaft 221 is housed (not shown). The spindle shaft 221 protrudes from one end portion (the left end portion in FIG. 5) of the spindle 220, and an outer peripheral blade blade 230 sandwiched between two flanges 240 is concentrically formed by bolts 241 on the protruding end surface. It is fixed. In the blade unit 210, the spindle 220 is fixed to the slide plate 201 via a rectangular parallelepiped spindle holder 222 in a state where the axial direction of the spindle shaft 221 is parallel to the Y direction.

  The outer peripheral blade 230 is provided with an outer peripheral blade 232 made of a grindstone on the outer peripheral edge of a disk-shaped base material 231. The base material 231 is made of, for example, a stainless steel plate having a thickness of about 0.1 to 0.3 mm, and abrasive grains made of diamond or the like are generally known on the outer periphery of the base material 231 such as electrodeposition and electroforming. The outer peripheral blade 232 is formed by being fixed by a metal bond method. In this case, the size of the abrasive grains is preferably about # 600 to # 1000. The outer peripheral blade 230 is rotated at a high speed of, for example, about 2000 to 5000 rpm by the operation of the spindle 220.

  A part of the outer peripheral blade 230 is covered with a blade cover 250. The blade cover 250 is a rectangular thin plate member, and a slit 251 is formed at the center in the thickness direction so as to open on one side (shown by 250a in FIG. 3). An arcuate cutout 252 is formed across one side 250a and the lower end side (indicated by 250b in FIG. 3) of the blade cover 250. The outer peripheral blade 230 is rotatably accommodated in the slit 251, and is configured to cut the ingot S with the outer peripheral blade 232 exposed from the notch 252. In other words, in the outer peripheral blade 230, a portion other than the portion that substantially cuts the ingot S is covered with the blade cover 250. The blade cover 250 is supported by the spindle holder 222 or the like via a stay (not shown) or the like.

  The cutting unit 20 is moved in the direction of the ingot S held by the holder 100 by the cutting unit moving mechanism 30, and the blade unit 210 evacuated above the ingot S is moved down, so that FIG. 3 and FIG. As shown, the ingot S is cut at a portion of the outer peripheral blade 230 exposed from the notch 252 of the blade cover 250.

  As shown in FIG. 3, the cutting edge amount of the outer peripheral blade 230 (the portion that substantially contributes to cutting out of the length from the outer peripheral edge to the center of the diameter) R is the cutting edge that is the outermost edge of the outer peripheral blade 232 in this case. To the outer peripheral edge of the flange 240, and the cutting edge protrusion amount R is set to be equal to or slightly larger than the radius of the ingot S to be cut. Therefore, when the outer peripheral blade 230 is cut deepest into the ingot S, that is, using all of the blade leading amount R (FIG. 3 shows the state), the outer peripheral blade 232 has a cutting edge at the diameter center of the ingot S. Is supposed to reach

  Further, cutting fluid nozzles 260 are attached to the outer surfaces of both sides of the blade cover 250 sandwiching the outer peripheral blade 230 so as to eject and supply the cutting fluid to a processing point that is a cut portion of the outer peripheral blade 230 with respect to the ingot S. Yes. The cutting fluid is used as a lubricant for cooling the heat generated during the cutting, washing away the cutting waste, and reducing friction, and the cutting fluid is pumped from the pipe 261 to the cutting fluid nozzle 260. The ejection direction of the cutting fluid from the cutting fluid nozzle 260 is directed to the point where the outer peripheral blade blade 230 acts most on the ingot S.

  Further, a plurality (four in this case) of hydrostatic pressure pads 270 are arranged at equal intervals in the circumferential direction at a portion sandwiching the outer peripheral portion of the outer peripheral blade 230 in the blade cover 250. These hydrostatic pressure pads 270 blow pressurized air on both surfaces of the outer peripheral portion of the outer peripheral blade blade 230 and suppress vibration and vibration of the rotating outer peripheral blade blade 230 with the pressure. There is a contact-type vibration suppression mechanism such as a rubber roller having the same function, and such a vibration suppression mechanism may be provided in place of the hydrostatic pressure pad 270.

  According to the cutting unit 20, the blade unit 210 is moved up and down along the guide rail 202 by the lifting drive mechanism 204, and the outer peripheral blade blade 230 is cut into the ingot S while moving down. . The ingot S is sliced into a ring shape by combining the cutting operation of the outer peripheral blade 230 and the operation of rotating the ingot S on the holder 100.

  On the front surface of the spindle holder 222, a disk-shaped suction pad (hereinafter referred to as a receiving pad) 280 that receives and sucks a thin-plate semiconductor wafer formed by slicing the ingot S is disposed. The receiving pad 280 is a vacuum suction type pad, similar to the suction pad 114, and is provided so as to advance and retreat with respect to the ingot S by the air cylinder 281.

  The air cylinder 281 is attached to the front surface of the spindle holder 222 via an L-shaped bracket 284 having a vertical plate portion 282 and a horizontal plate portion 283. The bracket 284 is attached to the spindle holder 222 so that the height of the bracket 284 can be adjusted by screws (not shown) passed through a pair of left and right elongated holes 282a formed in the vertical plate portion 282 extending in the vertical direction. Although not shown, the horizontal plate portion 283 of the bracket 284 is formed with a pair of left and right elongated holes extending in the X direction, and the air cylinder 281 is adjusted in position in the X direction by screws passed through these elongated holes. It is attached as possible. The receiving pad 280 can be arranged concentrically with respect to the end surface of the ingot S by adjusting the mounting height of the bracket 284 and adjusting the position of the air cylinder 281 in the X direction.

(C) Cutting unit moving mechanism The cutting unit moving mechanism 30 includes a pair of parallel guide rails 300 extending in the Y direction, a screw rod 310 disposed between the guide rails 300 and extending in the Y direction, and the screw. The motor 320 is configured to rotate the rod 310. The column 200 of the cutting part 20 is movably engaged with the guide rail 300. The screw rod 310 is supported on the base 2 via a bearing (not shown) so as to be rotatable and immovable in the axial direction, and is screwed into the column 200. The motor 320 is fixed on the base 2 via a motor bracket 321 and is connected to the screw rod 310 so as to rotate the screw rod 310 in one direction and the other direction.

  According to the cutting unit moving mechanism 30, when the screw rod 310 is rotated in one direction by the motor 320, a propulsive force is generated in the column 200 to which the screw rod 310 is screwed, and the column 200, that is, the entire cutting unit 20 is connected to the guide rail 300. 2 to the left in the Y direction in FIG. Further, when the motor 320 rotates in the reverse direction, the cutting unit 20 moves to the right in the Y direction in FIG. Here, the position where the cutting unit 20 is located on the rightmost side in FIG. When the blade unit 210 is lowered at the standby position, the blade unit 210 is positioned in a free space on the right side of the ingot S held by the holder 100 as shown in FIG.

[2] Ingot cutting operation The above is the configuration of the ingot cutting apparatus 1, and the operation of slicing the ingot S with the apparatus 1 to obtain a large number of semiconductor wafers (substrates) will be described.
First, the ingot S is placed horizontally on the holder 100 of the ingot holding unit 10. The ingot S becomes rotatable around the axis by the rotating action of the roller 102. Next, the suction pad 114 of the ingot rotation drive mechanism 110 is disposed concentrically on the end face of the ingot S facing the suction pad 114, and the end face of the ingot S is sucked by the suction pad 114 by vacuum operation. In order to make the suction pad 114 concentric with the end surface of the ingot S, the position adjustment mechanism 120 is operated as described above, and the height and the position in the X direction of the suction pad 114 are adjusted via the stand 111. The ingot S cannot be rotated unless the motor 116 is rotated, and is fixed.

  After the blade unit 210 of the cutting unit 20 is retracted upward to a position where the outer peripheral blade blade 230 does not hit the ingot S, the cutting unit 20 is moved in the ingot S direction by the cutting unit moving mechanism 30, and the ingot S 2, the cutting part 20 is stopped at the position where the outer peripheral blade blade 230 corresponds to the predetermined cutting end which is the right end in FIG. 2. A receiving pad 280 for receiving the semiconductor wafer after cutting is arranged concentrically with respect to the end surface of the ingot S, and the air cylinder 281 is extended to match the end surface of the ingot S, and is vacuum-operated on the end surface of the ingot S. Adsorb.

  This completes the preparation for cutting. Subsequently, the spindle 220 of the blade unit 210 is operated to rotate the outer peripheral blade 230 at a high speed and the cutting fluid nozzles 260 are ejected from the cutting fluid nozzle 260 while the blade drive unit 204 is moved by the lift drive mechanism 204. The outer peripheral blades 230 are cut into the ingot S. The cutting fluid is supplied into the grooves of the ingot S formed by cutting the outer peripheral blade blade 230, and the cutting edge of the outer peripheral blade blade 230 reaches the processing point where the ingot S is cut.

  As a method for slicing the ingot S completely in a circular shape, first, the blade unit 210 is lowered while the ingot S is fixed, and the cutting edge of the outer peripheral blade 230 is moved to the ingot as shown in FIG. The descent is stopped when it reaches the center of the diameter of S. While continuing the rotation of the outer peripheral blade blade 230, the motor 116 is operated to rotate the ingot S around the axis in one direction, and the ingot S is operated by pressing the remaining portion to be cut against the outer peripheral blade blade 230. Cut off. Then, when the cutting is completed by rotating the ingot S by 180 ° or more, the blade unit 210 is retracted upward. By such an operation, the ingot S can be sliced in a ring shape.

  In addition to this slicing method, the ingot S is rotated before the outer peripheral blade 230 is cut, and the outer blade 230 is gradually cut into the rotating ingot S so that the cutting edge is the center of the diameter of the ingot S. Alternatively, a method may be adopted in which the slicing of the ingot S is completed at the point of time when the value is reached.

  In any method, the cutting conditions are preferably such that the rotational speed of the outer peripheral blade 230 is about 2000 to 5000 rpm, and the cutting speed (the descending speed of the blade unit 210) is about 0.1 to 20 mm / second. In addition, although the cutting speed is adjusted by the length with which the cutting edge of the outer peripheral blade 230 comes into contact with the ingot S (the longer it is, the slower the cutting speed), it is more preferably about 1 to 10 mm / second. The sliced semiconductor wafer is adsorbed and held on the receiving pad 280, and the air cylinder 281 is reduced to remove the semiconductor wafer from the receiving pad 280 and store it in a predetermined storage location.

  With the above cutting operation, one semiconductor wafer is cut out from the ingot S. Thereafter, the cutting unit 20 is moved along the ingot S at a pitch corresponding to the thickness of the semiconductor chip to be obtained, and then the cutting operation of lowering the blade unit 210 while rotating the outer peripheral blade 230 as described above. The ingot S is cut into a large number of semiconductor wafers by repeatedly performing the process of cutting out one semiconductor wafer by combining the operation of rotating the ingot S and the operation of rotating the ingot S over the entire length of the ingot S.

  As described above, according to the method of cutting the ingot S using the ingot cutting device 1 of the present embodiment, the operation of cutting the outer peripheral blade blade 230 to the center of the diameter of the ingot S and the operation of rotating the ingot S by 180 ° or more. By appropriately combining these, the ingot S can be sliced into a circular shape. By rotating the ingot S about the axis, the cutting amount of the outer peripheral blade blade 230 into the ingot S may be equal to the radius of the ingot S. Therefore, the cutting edge amount R of the outer peripheral blade blade 230 is as shown in FIG. As shown, a radius equal to or greater than the radius of the ingot S is sufficient.

  This means that the cutting amount of the outer peripheral blade 230 into the ingot S can be a minimum length such as the radius of the ingot S. For this reason, even if the ingot S has a diameter larger than 300 mm or 400 mm, the cutting fluid ejected from the cutting fluid nozzle 260 can be sufficiently supplied to the machining point, and as a result A large-diameter ingot S can be cut without hindrance. Moreover, since the thickness can be reduced without increasing the size of the outer peripheral blade blade 230, the outer peripheral blade blade 230 can have sufficient strength. Furthermore, by thinning the outer peripheral blade 230, the number of semiconductor wafers cut out from the ingot S can be increased, and there is an advantage that the production efficiency can be improved.

It is a perspective view of the ingot cutting device concerning one embodiment of the present invention. FIG. 2 is a plan view of the apparatus of FIG. 1. It is a side view which shows the state cut into the ingot with the blade unit which the apparatus comprises. It is sectional drawing which shows the structure of the position adjustment mechanism of the suction pad of the ingot rotation drive mechanism which the apparatus comprises. It is a top view which shows the relative position of a blade unit and an ingot. It is a front view which shows the relative position of a blade unit and an ingot.

Explanation of symbols

1 ... Ingot cutting device (substrate cutting device)
10: Ingot holding part (substrate holding means)
204 ... Elevating drive mechanism (advance / retreat means)
221 ... Spindle shaft (rotating shaft)
230: Peripheral blade 232: Peripheral blade R: Amount of blade tip S: Ingot (substrate material)

Claims (5)

A substrate cutting method for obtaining a disk-shaped substrate by slicing a cylindrical substrate material into a circular shape, holding the substrate material rotatably about an axis,
An outer peripheral edge made of a grindstone is provided on the outer peripheral edge of the disk-shaped base material, and has a cutting edge amount corresponding to the radius of the substrate material, and the rotation axis is set parallel to the axial direction of the substrate material. A cutting operation for cutting the rotated outer peripheral blade blade into the substrate material until the cutting edge of the outer peripheral blade reaches at least the diameter center of the substrate material;
A substrate cutting method comprising cutting the substrate material in combination with a substrate material rotating operation for rotating the substrate material by 180 ° or more. First, without rotating the substrate material, the outer peripheral blade blade is cut into the substrate material until the cutting edge of the outer peripheral blade reaches the diameter center of the substrate material,
The substrate cutting method according to claim 1, wherein the remaining portion is cut by rotating the substrate material while continuing to rotate the outer peripheral blade.   The substrate material is rotated from the beginning, and the outer peripheral blade is cut with respect to the substrate material until the cutting edge of the outer peripheral blade reaches the diameter center of the substrate material. Substrate cutting method.   The substrate cutting method according to claim 1, wherein the substrate material has a diameter of 400 mm or more. A substrate cutting apparatus for obtaining a disk-shaped substrate by slicing a cylindrical substrate material into a circular shape, and a substrate holding means for holding the substrate material rotatably about an axis;
An outer peripheral edge made of a grindstone is provided on the outer peripheral edge of the disk-shaped base material, and has a cutting edge amount corresponding to the radius of the substrate material, and the rotation axis is set parallel to the axial direction of the substrate material. Rotated outer peripheral blades,
A substrate cutting apparatus comprising: an advancing / retreating means for advancing and retracting the outer peripheral blade with respect to the substrate material.

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