JP2007266630A - Substrate processing equipment and substrate processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To perform a uniform and high processing-efficiency fluid treatment for a substrate, while reducing damages to a formed pattern, and simplify the structure of substrate processing equipment. <P>SOLUTION: The substrate processing equipment is structured by the use of a fluid supply nozzle 100. This fluid supply nozzle 100, which is provided at a fluid inflow section 101 into which a fluid flows, a fluid reservoir section 102 for fluid storage, and between the fluid inflow section 101 and fluid reservoir section 102, includes a flow velocity control wall 103, having an orifice 103a for fluid inflow into the fluid reservoir section 102 with the flow velocity reduced and a discharge section 104, having a slit 105 for discharging a fluid with a fluid pressure applied to the fluid reservoir section 102. The substrate processing method includes a step of processing a substrate, by discharging a fluid onto the substrate in one layer of continuous membrane, and thereby allowing the use of the fluid supply nozzle 100. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly to substrate processing using a fluid supply nozzle in substrate processing such as a semiconductor device or a flat display panel (liquid crystal display device and PDP (Plasma display panel)). The present invention relates to an apparatus and a substrate processing method.

  The substrate processing using the fluid of the semiconductor substrate in the semiconductor device manufacturing process includes not only wet etching of the semiconductor substrate but also cleaning of the semiconductor substrate with various fluids, and the processing is performed everywhere in the semiconductor device manufacturing process. ing. Conventionally, many batch-type processing methods have been employed in which a plurality of wafers are immersed in a fluid tank at the same time, and wet etching or cleaning processing is performed. However, in such a batch type processing method, a large fluid processing tank is required regardless of the number of semiconductor substrates processed, so that the entire manufacturing apparatus becomes large with an increase in the diameter of the semiconductor substrate. Had problems.

  Further, even when a plurality of semiconductor substrates are simultaneously processed by a batch type treatment apparatus, if the next process is a process using a single wafer processing apparatus, the processing waiting time differs for each semiconductor substrate. As a result, in the semiconductor substrate whose processing waiting time becomes long after the wet etching process, inconveniences that affect the device characteristics of the semiconductor device, such as generation of a natural oxide film on the surface of the semiconductor substrate, occur.

  Therefore, a single-wafer type substrate processing apparatus for processing semiconductor substrates one by one has been proposed in a substrate processing apparatus using a fluid, as in other processes.

  A substrate processing apparatus using a single-wafer type fluid is configured so that a semiconductor substrate mounted on a rotary table is rotated in a processing chamber while fluid is supplied from a fluid supply nozzle installed near the center position of the semiconductor substrate. Is a device that performs wet etching or surface treatment of a semiconductor substrate and the like. However, the substrate processing apparatus using the single-wafer type fluid also has the following problems with the increase in the diameter of the semiconductor substrate.

  That is, a large amount of clean fluid is supplied to the central portion of the semiconductor substrate and the surface of the semiconductor substrate is sufficiently fluid-treated, whereas the amount of processing fluid per unit area decreases toward the outer peripheral portion of the semiconductor substrate. . Furthermore, the fluid also deteriorates as it goes to the outer peripheral portion as compared with immediately after discharge, and it becomes difficult to make the processing uniform in the semiconductor substrate surface.

  For example, Patent Document 1 proposes a single-wafer substrate processing apparatus for solving this problem. Hereinafter, this will be described with reference to the drawings.

  FIG. 13 is a schematic configuration diagram of a single-wafer type substrate processing apparatus using a conventional fluid.

  A turntable 11 is installed in the processing chamber 10, and the turntable 11 is connected to a drive unit 12 and can be rotated by a rotation operation of the drive unit 12.

  The silicon substrate 13 is installed on the turntable 11 and rotates together with the turntable 11.

  The fluid supply nozzle 14 installed at the upper part in the processing chamber 10 supplies the fluid 15 onto the silicon substrate 13 and is controlled in angle and direction by a nozzle adjustment mechanism 16. Here, the fluid 15 is a liquid such as a chemical solution or pure water.

  The fluid 15 is supplied to the fluid supply nozzle 14 by the pump device 17, and the pump device 17 and the nozzle adjustment mechanism 16 are controlled by the control system 18. In this way, the flow rate of the fluid 15 supplied onto the silicon substrate 13 is controlled to an optimum state according to the processing.

  The fluid 15 used for processing the silicon substrate 13 is discharged from the processing chamber 10 through the waste liquid drain 19.

  Processing by such a processing apparatus is performed by setting the silicon substrate 13 on the turntable 11 and supplying the fluid 15 onto the silicon substrate 13 by the fluid supply nozzle 14 while rotating.

  The substrate processing apparatus shown in FIG. 13 uses an arrangement of fluid supply nozzles 14 for uniformizing the processing in a plane in the silicon substrate 13. FIG. 14 shows an example of this as a plan view.

  As shown in FIG. 14, a position A near the center of the silicon substrate 13, a position B closer to the outer periphery than the position A, and a position C closer to the outer periphery than the position B are considered. At this time, one fluid supply nozzle 14a for supplying the fluid 15 aiming at the position A, two fluid supply nozzles 14b for supplying the fluid 15 aiming at the position B, and fluid supplying the fluid 15 aiming at the position C Four supply nozzles 14c are respectively installed. That is, a total of seven fluid supply nozzles 14 are used, and the number of fluid supply nozzles 14 is increased as the position is closer to the outer peripheral portion of the silicon substrate 13.

  By doing in this way, since the flow volume of the fluid 15 can be increased with respect to the outer peripheral part of the silicon substrate 13, a fluid can be supplied uniformly over the whole surface on the silicon substrate 13.

  In addition to the above, the nozzle adjustment mechanism 14 and the pump device 17 are controlled by the control system 18, and the direction and angle at which the fluid supply nozzle 14 discharges the fluid 15, the flow rate of the fluid 15, and the like correspond to the processing performed on the silicon substrate 13. To be optimal.

  In this way, when the silicon substrate 13 placed on the turntable 11 is rotated and the fluid 15 is supplied from the seven fluid supply nozzles 14, the fluid 15 that has not deteriorated over the entire surface of the silicon substrate 13. Can be supplied. As a result, in-plane non-uniformity of processing on the silicon substrate 13 can be reduced.

  In general, a simple tube is used as a fluid supply nozzle in a conventional substrate processing apparatus.

  Another example of a processing apparatus for performing uniform processing on the entire surface of the substrate is, for example, an apparatus disclosed in Patent Document 2.

According to the apparatus of Patent Document 2, a plurality of fluid supply nozzles and a plurality of fluid recovery nozzles are arranged so as to cover the entire surface of the silicon substrate 13.
JP 2002-151455 A (page 3-4, FIGS. 1 and 2) JP 2001-68449 A

  However, in the substrate processing apparatus described above, the number of nozzles increases as the substrate diameter increases. This complicates the apparatus configuration and increases the parameters that need to be controlled for fluid ejection. As a result, a very long time is required to determine the optimum conditions for processing the substrate. Further, when the apparatus configuration is complicated, it becomes difficult to locate the cause when a problem such as generation of particles occurs in the fluid supply nozzle or the fluid supply pipe.

  Furthermore, in the fluid treatment process, fluid treatment with a plurality of fluids is often performed continuously. Therefore, in the conventional substrate processing apparatus, individual fluid supply nozzles for supplying respective fluids are provided in order to continuously perform processing using different fluids in the same processing chamber. As a result, a large number of fluid supply nozzles are installed, the time required to determine the parameters of the optimum processing conditions is further increased, and the maintenance work of the apparatus becomes very complicated.

  In addition, when a fluid is supplied using a fluid supply nozzle having a conventional structure, which is generally a simple tube, even if the processing method uses a plurality of fluid supply nozzles, the processing of the substrate may be uneven depending on the region on the substrate. is there. This is because, on the substrate, there are a region where the fluid discharged from the fluid supply nozzle directly collides and a region where the fluid flows from such a region and comes into contact with the fluid.

  Further, in order to improve the processing efficiency, processing speed, processing uniformity, etc., the flow rate of the fluid is increased (for this purpose, for example, the discharge pressure applied to the fluid is increased) and the rotation speed of the substrate is increased. Is desired. This is because the rate at which the fluid is replaced on the substrate (referred to as liquid replacement or removal rate) increases.

  However, when the flow rate of the fluid is increased, a physical impact when the ejected fluid comes into contact with the substrate increases, and damage to the substrate such as a pattern formed on the substrate falling or peeling occurs.

Furthermore, for example, in the case of performing cleaning processing of a substrate (wafer or the like) using ultrapure water, electric charges are generated due to friction between the rotating substrate and ultrapure water and accumulated in the substrate. An electric field may occur. When such an electric field is increased and a voltage exceeding the withstand voltage of an insulating film or the like formed in the substrate is generated, the pattern formed in the substrate is destroyed. Here, when the rotation speed of the substrate is high, or when the discharge pressure of the fluid is high (the flow rate of the fluid is large), charging becomes easy, and pattern destruction increases. This is mitigated by a method such as adding CO ₂ to lower the specific resistance value of ultrapure water. However, even in such a case, there is a problem depending on the rotation speed of the substrate and the discharge pressure of the fluid. It becomes.

  In view of the above problems, the present invention simplifies the structure of the apparatus, improves the efficiency, speed and uniformity of substrate processing and reduces damage to the substrate, and uses the substrate processing method. An object of the present invention is to provide a fluid supply nozzle capable of performing the above and a substrate processing apparatus including the fluid supply nozzle.

  In order to achieve the above object, a fluid supply nozzle according to the present invention includes a fluid inflow portion into which a fluid flows, a liquid reservoir portion connected to the fluid inflow portion to accumulate fluid, a fluid inflow portion, and a liquid reservoir portion. A flow rate adjusting wall provided with an orifice for passing a fluid while reducing the flow rate, and a discharge connected to a liquid reservoir and having a slit for discharging the fluid by the pressure of the fluid passing through the orifice A part.

  According to the fluid supply nozzle of the present invention, the fluid that has flowed into the fluid inflow portion moves to the liquid reservoir while the flow velocity is reduced by passing through the orifice of the flow velocity adjusting wall. For this reason, the pressure of the fluid having the flow velocity when flowing into the fluid inflow portion is not directly applied inside the liquid reservoir, and the pressure of the fluid whose flow rate is adjusted by the flow velocity adjusting wall is uniformly applied. Since the fluid is discharged from the slit of the discharge portion by such a uniform pressure, the fluid is discharged in a film shape, and the flow rate is uniform in each portion of the film when discharged.

  In addition, it is preferable that a slit has an opening surface whose ratio of length to width is 10 or more.

  In this way, the fluid can be reliably supplied in the form of a film. Here, the slit has, for example, a rectangular opening surface, and the length of the long side is referred to as the length, and the length of the short side is referred to as the width. Even in the case of an opening having a shape other than a rectangle, the longer dimension is called the length, and the shorter dimension is called the width. Moreover, an opening surface shall mean the surface of the edge on the opposite side to the liquid reservoir part in a slit.

  In addition, the liquid reservoir is a straight line connecting the contact between the inner wall of the liquid reservoir and the flow rate adjusting wall and the contact between the inner wall of the liquid reservoir and the slit in a cross section perpendicular to the length direction of the opening surface of the slit. On the other hand, it is preferable to have a cross-sectional shape that swells on the opposite side of the flow rate adjusting wall.

  In this way, since the liquid reservoir can store a sufficient amount of fluid, the pressure is surely applied uniformly within the liquid reservoir, and a film with a uniform flow rate at each part when fluid is discharged. Can be surely discharged.

  In addition, the liquid reservoir is a straight line connecting the contact between the inner wall of the liquid reservoir and the flow rate adjusting wall and the contact between the inner wall of the liquid reservoir and the slit in a cross section perpendicular to the length direction of the opening surface of the slit. On the other hand, it is preferable to have a curved cross-sectional shape on the side opposite to the flow rate adjusting wall.

  In this way, the liquid reservoir can store a sufficiently large amount of fluid, so that the pressure is surely applied uniformly within the liquid reservoir. In addition to this, since the inner wall of the liquid reservoir is curved, the fluid flows smoothly. From the above, it is possible to reliably discharge the fluid in a film shape with a uniform flow rate at each portion, and to increase the flow rate more.

  The slit preferably discharges fluid in a direction having an angle with respect to the central axis of the fluid supply nozzle.

  In this case, the direction in which the fluid supply nozzle is installed and the direction in which the fluid is discharged can be set individually. Therefore, when the fluid supply nozzle is incorporated in, for example, the substrate processing apparatus, Design freedom is improved.

  In order to achieve the above object, a substrate processing apparatus of the present invention includes the fluid supply nozzle of the present invention and a flow rate control unit for controlling the flow rate of the fluid flowing into the fluid supply nozzle, from the fluid supply nozzle to the substrate. The fluid is supplied, and the length direction of the opening surface of the slit and the direction in which the fluid is discharged from the slit are substantially parallel to the substrate.

  According to the substrate processing apparatus of the present invention, a fluid can be supplied to a substrate or the like to be processed in a continuous film shape in which the flow rate of the fluid in each part of the contact area when the fluid contacts the substrate is uniform. . The reason for this is that, when a fluid is discharged using the fluid supply nozzle of the present invention, the fluid is discharged in the form of a film and the flow rate is uniform in each part of the film during the discharge. In addition, since the length direction of the opening surface of the slit is parallel to the substrate, the flow rate of the fluid (fluid supply per unit time and unit area) even when the substrate and the fluid contact each other. The amount is uniform in each part.

  Moreover, compared with the case where the conventional fluid supply nozzle which is a simple pipe | tube is used, the fluid can be supplied with respect to a wide range with one fluid supply nozzle.

  As a result, the following effects can be obtained by using the substrate processing apparatus of the present invention.

  Since the fluid can be supplied in a wide range by discharging in a film shape, it is not necessary to increase the number of fluid supply nozzles even if the substrate has a large diameter. For this reason, it is possible to prevent the structure of the substrate processing apparatus from becoming complicated.

  In addition, since a fluid can be supplied as a film having a uniform flow rate at each part on the substrate, it is possible to prevent the processing of the substrate from being uneven depending on the position.

  In addition, since the fluid supplied in a uniform film form has a small physical impact when falling on the substrate, it is possible to reduce damage such as the pattern formed on the substrate falling or peeling off. Furthermore, since the physical impact is small during the treatment with ultrapure water or the like, the generation of static electricity is also reduced, and it is possible to prevent the pattern formed inside the substrate from being broken due to the generation of an electric field in the substrate. .

  Moreover, compared with the case where the fluid is supplied by the conventional fluid supply nozzle, the flow rate of the supplied fluid can be increased while suppressing damage to the substrate. For this reason, liquid substitution property can be made high and processing efficiency and processing speed can be improved.

  The length direction of the opening surface of the slit and the substrate need only be substantially parallel and are not required to be strictly parallel. In other words, even if it is out of strict parallelism, it can be considered substantially parallel if effects such as uniformity of processing on the substrate are realized to the extent that the requirements are satisfied.

  In order to achieve the above object, a substrate processing method of the present invention is a substrate processing method for processing a substrate by supplying a fluid onto the substrate, wherein the fluid is supplied to the substrate in a continuous film shape, The flow rate of the fluid in each part of the contact area when contacting the substrate is uniform.

  According to the substrate processing method of the present invention, the fluid is supplied in the form of a continuous film in which the flow rate of each part of the contact area when contacting the substrate is uniform. From this, as described in the description of the substrate processing apparatus of the present invention, it is possible to efficiently perform a process that is uniform over the entire surface of the substrate and has little damage.

  The fluid supply to the substrate is preferably performed using the fluid supply nozzle of the present invention.

  In this way, the fluid is reliably supplied to the substrate in a continuous film shape, and the flow rate of the fluid in each part of the contact region when the fluid contacts the substrate becomes uniform. Therefore, the effect of the present invention can be realized with certainty.

  Further, it is preferable that a pattern having a pattern width of 0.13 μm or less and an aspect ratio of 2.5 or more is formed on the substrate.

  If such a pattern is formed on the substrate, it is possible to reliably realize the effect of the present invention for processing the substrate while reducing damage to the pattern.

  When the fluid supply nozzle of the present invention is used, the fluid is discharged in the form of a film, and when discharged, the flow rate is uniform in each part of the film. When the substrate is processed by supplying the fluid in this way, uniform processing can be performed over the entire surface of the substrate. In addition, since the fluid flow rate can be increased while suppressing physical impact when contacting the substrate, both physical damage to the pattern formed on the substrate and damage caused by the generated electric charges are alleviated. Efficiency can be improved. Furthermore, since the fluid can be supplied to a wide range by one fluid supply nozzle, the number of fluid supply nozzles required for processing a large-diameter substrate may be small, for example, one. Therefore, the structure of the substrate processing apparatus using the fluid supply nozzle of the present invention is simple.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the fluid is a liquid used for processing a substrate such as an etching solution and pure water. However, the present invention is not limited to this.

(First embodiment)
FIG. 1 is a view showing an appearance of a fluid supply nozzle 100 according to the first embodiment of the present invention.

  Further, a cross section taken along the line IIa-IIa ′ in FIG. 1 (hereinafter referred to as a horizontal cross section) is shown in FIG. 2A, and a cross section taken along the line IIb-IIb ′ (hereinafter referred to as a vertical cross section) is shown in FIG. , Respectively.

  As shown in FIGS. 1, 2A, and 2B, the fluid supply nozzle 100 includes a fluid inflow portion 101, a liquid reservoir portion 102 that accumulates fluid flowing into the fluid inflow portion 101, and a fluid inflow. A flow rate adjusting wall 103 (not shown in FIG. 1) provided between the part 101 and the liquid reservoir 102 and a discharge part 104 connected to the liquid reservoir 102 are provided. The flow rate adjusting wall 103 has a flat plate shape and is provided with an orifice 103a for allowing fluid to pass while reducing the flow rate. The orifice 103a has a truncated cone shape in which the liquid reservoir 102 side is narrowed.

  Here, considering a straight line passing through the center of the flow velocity adjusting wall 103 and perpendicular to the flow velocity adjusting wall 103, this is referred to as a central axis 200.

  The discharge unit 104 includes a slit 105 for discharging a fluid. As shown in FIG. 2B, the slit 105 is parallel to the central axis 200 in a direction from the side in contact with the liquid reservoir 102 to the tip on the opposite side (hereinafter referred to as an opening surface).

  In the horizontal sectional view shown in FIG. 2 (a) and the vertical sectional view shown in FIG. 2 (b), the fluid inflow portion 101, the liquid reservoir portion 102, the flow rate adjusting wall 103, and the discharge portion 104 are separated by dotted lines. Although shown, these components may be integrally molded. In that case, the boundary indicated by the dotted line does not exist as a clear structure.

  FIG. 2C shows a cross section taken along the line IIc-IIc ′ in FIG. 2A, and shows the cross-sectional shapes of the discharge section 104 and the slit 105. FIG. In the present embodiment, the slit 105 has a rectangular cross section with rounded corners. Further, the dimension of the long side ignoring the rounded corners represented by L is called the length, and the dimension of the short side ignoring the rounded corners represented by W is called the width.

  In addition, as shown in FIG. 2B, the liquid reservoir 102 is curved with respect to a straight line 201 connecting the contact between the liquid reservoir 102 and the flow velocity adjusting wall 103 and the contact between the liquid reservoir 102 and the discharge portion 104. It has a shape swelled outward (on the opposite side to the flow rate adjusting wall 103). With such a shape, a sufficient amount of fluid can be accumulated in the liquid reservoir 102, and the fluid that has entered the liquid reservoir 102 from the orifice 103 a smoothly flows and reaches the discharge unit 104.

  The horizontal cross section includes the central axis 200 and is parallel to the length direction of the opening surface of the slit 105, and the vertical cross section includes the central axis 200 and is a plane orthogonal to the horizontal cross section.

  The discharge of fluid using the fluid supply nozzle 100 having the above structure will be described below with reference to the drawings.

  FIG. 3A schematically shows the flow of fluid when fluid is discharged using the fluid supply nozzle 100 of the present invention, and is the same as the line IIa-IIa ′ in FIG. It is sectional drawing by. FIG. 3B schematically shows the flow of the fluid when the fluid is discharged using the reference fluid supply nozzle 100b for comparison. In the fluid supply nozzle 100 of the present invention, the reference fluid supply nozzle 100b has a configuration in which the flow rate adjusting wall 103 is not formed and the fluid inflow portion 101 and the liquid reservoir portion 102 are directly connected.

  When the fluid supply nozzle 100 of the present embodiment is used, the fluid flows into the fluid inflow portion 101 according to the arrow 202 as shown in FIG. Thereafter, the fluid passes through the orifice 103 a provided in the flow rate adjusting wall 103 to reduce the flow rate, moves to the liquid reservoir 102, and accumulates in the liquid reservoir 102.

  By making the width of the slit 105 sufficiently narrow, the liquid reservoir 102 can be almost sealed. In this way, when the liquid reservoir 102 is filled with the fluid, the fluid in the liquid reservoir 102 is subjected to a uniform pressure by the fluid flowing in through the orifice 103a. Due to such a uniform pressure, the fluid is discharged in a continuous film form as shown by the arrow array 202a in FIG.

  The discharged fluid falls while showing a certain stable shape in the air. At this time, the shape of the fluid becomes a thinner film according to the cross-sectional shape of the slit 105, and the film formed by such a fluid flow is maintained without being disturbed until a certain distance is dropped. For example, when performing substrate processing, the film can be maintained until the ejected fluid falls on the substrate. Further, by continuously supplying the fluid to the fluid supply nozzle 100, the fluid can be continuously discharged in a film shape while preventing the shape from being disturbed or interrupted. This means that the fluid is discharged in the form of a continuous film.

  At this time, the flow rate of the fluid per unit area and per unit time is uniform on the discharge surface.

  The case where fluid is discharged using the control fluid supply nozzle 100b will be described below.

  As shown in FIG. 3B, the point where the fluid flows into the fluid inflow portion 101 according to the arrow 202 is the same as in the case of using the fluid supply nozzle 100 shown in FIG.

  However, since the flow rate adjusting wall 103 is not provided in the control fluid supply nozzle 100b, the fluid moves to the liquid reservoir 102 while substantially maintaining the flow rate when flowing into the fluid inflow portion 101.

  Here, the liquid reservoir 102 has a circular shape on the fluid inflow portion 101 side and a flat shape on the discharge portion 104 side. For this reason, when the flow rate of the fluid supplied to the fluid inflow portion 101 is too large (in other words, the flow velocity is too high), the pressure applied to the fluid filled in the liquid reservoir 102 becomes non-uniform. That is, the pressure differs near the center of the slit 105 (near the central axis 200) and near both ends (a position away from the central axis 200). As a result, the fluid discharged from the slit 105 of the reference fluid supply nozzle 100b cannot maintain the same cross-sectional shape as the cross-sectional shape of the slit 105. Specifically, as shown by the arrow array 202b in FIG. 3B, immediately after being ejected from the ejection unit 104, it is separated at both ends and the center of the slit 105 and cannot be ejected as a single layer film. . For this reason, the flow rate of the fluid per unit area and unit time is not uniform on the discharge surface.

  As described above, the fluid supply nozzle 100 of the present embodiment is sufficient by having the discharge portion 104 having the narrow slit 105 and the shape swollen to the outside (on the side opposite to the flow rate adjusting wall 103). A fluid reservoir 102 capable of accumulating various fluids and a flow rate adjusting wall 103 having an orifice 103a that allows the fluid to flow while reducing the flow rate of the fluid. it can.

  In the fluid supply nozzle 100 according to the present embodiment, for example, the fluid inflow portion 101 may be circular with an inner diameter of 25 mm, and the thickness of the flow velocity adjusting wall 103 may be 10 mm. Further, the inner diameter of the orifice 103a on the fluid inflow portion 101 side can be 5 mm, and the inner diameter of the liquid reservoir portion 102 side can be 4 mm.

  Further, the length from the contact point to the tip of the liquid reservoir 102 of the discharge unit 104 is 5 mm, and in the cross-sectional shape of the discharge unit 104 shown in FIG. 2C, the length is 53 mm and the thickness is 1.5 mm. Yes. The width of the slit 105 is 0.7 mm.

  The above dimensions are an example suitable for processing a silicon substrate having a diameter of 200 mm. In addition to such values, the flow rate of the required fluid or the ease of processing when forming the fluid supply nozzle 100 is facilitated. What is necessary is just to set suitably according to etc.

  The cross-sectional shape of the slit 105 is, for example, a rectangular shape having a width of 0.5 mm or more and 1 mm or less and a ratio of the length to the width of 10 or more. Obtainable. Further, it is desirable that a sufficient amount of fluid can be accumulated in the liquid reservoir 102. For this reason, the liquid reservoir 102 is located outside the straight line 201 (on the side opposite to the flow rate adjusting wall 103). The shape is inflated.

  Further, in the present embodiment, the fluid supply nozzle 100 may be integrally formed, but is divided into a plurality of arbitrary portions and combined and shown in FIGS. 1 and 2A to 2C. It may be used as a shape. In that case, an O-ring for preventing liquid leakage may be inserted into the joint of each component.

  In the present embodiment, the cross-sectional shape of the slit 105 is a rectangle with rounded corners, but is not limited thereto. For example, a rectangular shape with no rounded corners or a slit having an arcuate cross-sectional shape and an opening surface may be used.

  In this embodiment, two frustoconical orifices 103a are provided for the flow rate adjusting wall 103, but this is not an essential element. It is only necessary that the flow rate is adjusted in order to discharge the fluid into a single film so that a uniform pressure can be applied to the liquid reservoir 102. For this purpose, for example, it is sufficient that the pressure of the fluid flowing into the fluid inflow portion 101 is applied from a part of the flow rate adjusting wall 103 to the fluid filled in the liquid reservoir 102. Then, the number and shape of the orifices may be designed according to the type of fluid, the required flow rate, and the like.

  Furthermore, although the flow rate adjusting wall 103 has a flat plate shape, the present invention is not limited to this.

  Further, as the material of the fluid supply nozzle 100, a property such as chemical resistance corresponding to the type of fluid to be ejected is selected, and for example, the silicon substrate that is a processing target is prevented from being contaminated by impurities. For example, it is possible to use fluororesin or stainless steel.

  Further, when processing a silicon substrate having a flat surface, such as after a CMP (Chemical Mechanical Polishing) process, it is also preferable to provide a mesh or the like in the vicinity of the connection portion between the liquid reservoir 102 and the discharge portion 104. . If it does in this way, it can contain in the fluid discharged | emitted by generating a bubble, and can further relieve the physical impact with respect to a board | substrate. For this reason, it is possible to further increase the fluid discharge amount while preventing damage to the substrate.

  Next, the relationship between the flow rate of the fluid supplied to the fluid supply nozzle 100 of the present embodiment and the discharge shape indicated by the fluid discharged from the slit 105 will be described with reference to FIG.

  FIG. 4 is a diagram illustrating a state in which the fluid supply nozzle 100 is installed such that the slit 105 is horizontal and fluid is discharged. That is, in the fluid supply nozzle 100 of the present embodiment, since the direction from the side where the slit 105 contacts the liquid reservoir 102 toward the opening surface is parallel to the central axis 200, the opening surface of the central axis 200 and the slit 105. It is installed so that the length direction of both is horizontal.

  Further, the discharged fluid falls, for example, on a horizontally installed silicon substrate, and processing with the fluid of the silicon substrate is performed. At this time, the silicon substrate is rotating.

  First, the case of an appropriate flow rate shown in (B) will be described.

  In this case, the flow rate of the fluid flowing into the fluid supply nozzle 100 is appropriate. Specifically, the flow rate is, for example, in the range of 10 to 20 liters / minute if the fluid supply nozzle 100 has an appropriate size when processing the silicon substrate having a diameter of 200 mm exemplified above.

  At this time, the flow velocity at the time of discharge is the same in both the vicinity of the central axis 200 of the discharge unit 104 and the vicinity of both ends, and the fluid is discharged in a continuous film shape. Thereafter, the film is dropped into a silicon substrate at a position away from the discharge unit 104 by a certain distance while maintaining the film.

  For this reason, when it observes from an upper surface, the discharge shape is a square shape. In addition, when observed from the side, it is dropped on the silicon substrate with a curved discharge shape that almost draws an arc. In addition, the flow rate of the fluid is uniform in each part of the contact region where the single layer film of the fluid contacts the silicon substrate. That is, the fluid supply amount per unit area and unit time is equal in any part of the contact area.

  On the other hand, the case where the flow rate is insufficient as shown in FIG.

  In this case, the fluid flow rate with respect to the fluid supply nozzle 100 is insufficient. In the case of the same fluid supply nozzle 100 as described above, for example, the flow rate is 10 liters / minute or less.

  In such a case, the fluid cannot be discharged due to the uniform pressure applied to the fluid in the liquid reservoir 102, and the fluid is discharged in a state close to dripping.

  Specifically, the film is formed immediately after the fluid is discharged from the discharge unit 104, but the film cannot be maintained as it falls. When observed from the upper surface, it has a convex discharge shape that discharges more in the vicinity of the central axis 200 than in the vicinity of both ends. Observing from the side, the discharge shape is not a single line, and the fluid falls from a position close to directly below the discharge portion 104 to a certain distance. As a result, it falls unevenly on the substrate. Furthermore, in such a case, although the flow rate of the fluid is smaller than that in the case of the appropriate flow rate of (B), a part of the fluid falls on the substrate as droplets, so that the physical fluid gives to the substrate. The impact may be partially greater than in (B).

  Next, the case of excessive fluid shown in FIG.

  In this case, the flow rate of the fluid to the fluid supply nozzle 100 is excessive. In the case of the same fluid supply nozzle 100 as described above, for example, the flow rate is 20 liters / minute or more.

  In such a case, since the flow rate is excessive, the flow rate cannot be sufficiently reduced by the flow rate adjusting wall 103, and an excessive pressure is applied to the fluid in the liquid reservoir 102. For this reason, the fluid cannot be discharged from the slit 105 with uniform pressure.

  Specifically, the flow rate is greater near the both ends of the slit 105 than near the central axis 200, and when viewed from the top, a concave discharge shape is obtained. Further, when observed from the side, the discharge shape is not a single line, and the fluid falls in a certain range greatly away from directly below the discharge portion 104. As a result, the flow rate of each part is not constant in the contact region where the fluid falls and contacts the substrate.

  As described above, when a fluid is supplied at an appropriate flow rate to the fluid supply nozzle 100 of the present embodiment, the fluid can be discharged uniformly and in a single layer.

  Here, the removal of particles on the silicon substrate, which is one of the purposes of performing fluid treatment of the silicon substrate, will be considered. In this case, the removal of particles per unit time increases as the fluid flow rate increases regardless of the fluid discharge shape. However, the pattern formed on the silicon substrate is easily damaged when the flow rate is increased. It is particularly susceptible to damage when the pattern has a high aspect ratio. When the flow rate increases, the pressure of the fluid applied to the silicon substrate increases, and damages such as the formed pattern falling down or peeling off from the silicon substrate occur.

  FIG. 5A shows a cross-sectional view of the line pattern 211 formed densely on the silicon substrate 210. Here, the line pattern 211 has, for example, a width of 0.13 μm and an aspect ratio of 3. FIG. 5A shows the state of the line pattern 211 that is normally formed. When fluid processing is performed under conditions such as an appropriate fluid flow rate, such a normal line pattern 211 can be maintained after processing.

  On the other hand, when the flow rate of the fluid is excessive, the pressure applied from the fluid to the silicon substrate is increased in a region where the fluid is in contact with the silicon substrate, and as shown in FIG. Damage will occur. For example, as shown by 213, the line pattern 211 is peeled off from the silicon substrate 210 and disappears. Alternatively, as indicated by 214, the line pattern 211 may fall. In particular, when the width of the line pattern is 0.13 μm or less, damage is likely to occur.

  When such damage occurs, it causes a defect in a semiconductor device to be manufactured.

  Therefore, the flow rate of the fluid, the particle removal rate, and the pattern destruction rate will be described next.

  FIG. 6 shows the results of examining the removal rate of particles and the destruction rate of the pattern with respect to the flow rate of the fluid when the substrate is processed by discharging the fluid using the fluid supply nozzle 100 of the present embodiment. Here, the horizontal axis represents the fluid flow rate, and the vertical axis represents the particle removal rate and the pattern destruction rate.

  In FIG. 6, in the excessive flow rate region indicated by C, the particle removal rate is very high. However, the pattern destruction rate is also increased at the same time, which causes a decrease in yield when manufacturing a semiconductor device.

  Further, in the region where the flow rate is insufficient as indicated by A, the pattern destruction rate is very low, but since the particle removal rate is also low, it is necessary to perform processing for a long time. As a result, the throughput is lowered and the production efficiency is lowered.

  Therefore, if the substrate is processed by the fluid flow rate immediately before the pattern destruction rate starts to increase, the semiconductor device is most efficiently manufactured. This applies to the region of the proper flow rate indicated by B in FIG. As described above, if the silicon substrate has a diameter of 200 mm, an appropriate flow rate is, for example, 10 to 20 liters / minute.

  The line pattern 211 may be a resist pattern formed as a mask for performing etching. Alternatively, a pattern formed on a semiconductor device including an insulating film or a conductive film after etching may be used.

  Although the aspect ratio is set to 3, a pattern of 2.5 or more is effective in preventing pattern collapse and the like. The example of the pattern width is 0.13 μm, but the effect is remarkable when the pattern width is 0.13 μm or less. Further, not only the line pattern but also the dot pattern is similarly effective in preventing pattern collapse.

  Further, the greater the physical impact when the fluid falls on the silicon substrate 210, the greater the charge generated by the friction between the fluid and the silicon substrate 210. Such charges are accumulated in the silicon substrate 210, and when the electric field is increased thereby, the pattern formed in the silicon substrate 210 is destroyed.

  The damage due to such a reason can be reduced because the physical impact can be reduced by discharging the fluid into a film and performing the treatment.

  As described above, when the processing is performed by supplying the fluid to the target object such as the silicon substrate at an appropriate flow rate using the fluid supply nozzle 100 of the present embodiment, the following effects are obtained.

  First, since the fluid is discharged in a film shape, the fluid can be supplied over a wide range by one fluid supply nozzle. For this reason, it is possible to eliminate the necessity of installing a large number of fluid supply nozzles.

  Further, the flow rate of the fluid (amount of fluid supplied per unit area and unit time) is uniform in each part of the region where the fluid falls on the object to be processed and contacts the substrate. For this reason, it is possible to prevent variations in processing depending on the position on the substrate.

  In addition, when the fluid is discharged in a stable film shape, a physical impact at the time of dropping on the substrate can be reduced. For this reason, it is possible to reduce damage to the substrate and increase the flow rate of the fluid, thereby improving the processing efficiency and productivity.

  In addition, since the physical impact is reduced, static electricity generated between the substrate and the fluid is also reduced. For this reason, it is possible to suppress a phenomenon in which charges are accumulated on the substrate and a pattern formed inside the substrate is destroyed by an electric field.

  In FIG. 4, the case where the fluid supply nozzle 100 is installed so that the central axis 200 is horizontal and the fluid is discharged in the horizontal direction has been described. However, although such a configuration is a desirable configuration, it is not essential. This will be described below.

  The fluid discharged by the fluid supply nozzle 100 has a horizontal driving force derived from the supply pressure except when discharged in the vertical direction. However, such a horizontal driving force is lost by air resistance or the like after discharge. As a result, the fluid discharged in the form of a single continuous film falls vertically by gravity while maintaining the film. It is desirable for the fluid to fall perpendicular to the substrate after such a loss of horizontal thrust. This is because the pattern on the substrate can be prevented from being damaged by the horizontal driving force.

  Furthermore, it is preferable that the distance from the position where the horizontal driving force is lost after the discharge and the substrate starts to drop in the vertical direction is short. Specifically, for example, it is preferably 5 mm or less. When such a distance becomes long, an increase in the falling speed of the fluid due to gravity increases, so that a physical impact applied to the substrate increases and the substrate is damaged. Therefore, in order to reduce damage, it is better that the distance at which the fluid falls vertically is shorter.

  The above can be realized by setting the dimensions and structure of the fluid supply nozzle, the installation angle, the height of the installation position relative to the substrate, and the like.

  If this is the case, it is not essential that the fluid supply nozzle 100 be installed so that the central axis 200 is horizontal and that the fluid be discharged horizontally. However, it is desirable to discharge horizontally because the influence of the vertical driving force during discharge can be alleviated.

(Second Embodiment)
Next, a substrate processing apparatus according to a second embodiment of the present invention will be described with reference to the drawings.

  FIG. 7 is a diagram showing a schematic configuration of a single wafer type substrate processing apparatus using the fluid supply nozzle 100 according to the first embodiment. In this apparatus, as an example, a silicon substrate is processed.

  A rotation table 301 is installed horizontally in the processing chamber 300, and the rotation table 301 is connected to a drive unit 302 and can be rotated by a rotation operation of the drive unit 302.

  The silicon substrate 303 is placed on the turntable 301 and rotates together with the turntable 301.

  Above the silicon substrate 303 in the processing chamber 300, a chemical solution supply nozzle 304 that supplies a chemical solution for performing a process such as etching on the silicon substrate 303, and a pure water supply for cleaning the silicon substrate 303 with pure water. A nozzle 305 is provided. Both the chemical solution supply nozzle 304 and the pure water supply nozzle 305 have the same configuration as the fluid supply nozzle 100 of this embodiment. In addition, in each case, the slit 105 (see FIG. 2B) is installed so as to be parallel to the silicon substrate 303. That is, the length direction of the opening surface of the slit 105 and the central axis 200 are both set parallel to the silicon substrate 303. For this reason, the fluid is discharged in a film shape parallel to the silicon substrate 303, and then falls.

  The chemical solution discharged from the chemical solution supply nozzle 304 is supplied after its temperature and flow rate are adjusted by a chemical solution supply system 306 provided outside the processing chamber 300 and having a temperature adjustment function, a flow rate adjustment function, and the like. The chemical solution to be supplied may be supplied to the chemical solution supply system 306 through a central pipe, or a chemical solution tank may be provided in the chemical solution supply system 306 and held therein.

  The pure water discharged from the pure water supply nozzle 305 is supplied after the temperature and flow rate are adjusted by a pure water supply system 307 provided outside the processing chamber 300 and having a temperature adjustment function, a flow rate adjustment function, and the like. The Pure water is usually supplied using centralized piping, but is not limited to this.

  A protective wall 308 is provided in the processing chamber 300 to prevent the fluid (chemical solution, pure water, etc.) used for processing the silicon substrate 303 from scattering into the processing chamber 300. The fluid used for the treatment is transported to the waste liquid treatment system 309 as waste liquid through a waste liquid pipe provided in the lower part of the processing chamber 300. Depending on the type, the transported fluid is processed and collected in the waste liquid processing system 309 or transported to the outside of the substrate processing apparatus and processed.

  A control system 310 is also provided to control the drive unit 302, the chemical solution supply system 306, the pure water supply system 307, the waste liquid treatment system 309, and the like. That is, the rotation speed and rotation time of the drive unit 302, the temperature and flow rate of the chemical and pure water, the waste liquid processing method, and the like are instructed by the control system 310.

  The slit of the chemical solution supply nozzle 304 is located 30 mm above the silicon substrate 303. Further, the discharged hydrofluoric acid 311 falls to the vicinity of the center of the silicon substrate 303. This is desirable in terms of processing efficiency and processing uniformity, but is not limited thereto.

  When the substrate processing apparatus is configured as described above, the structure is simpler than that of the conventional substrate processing apparatus. This is because, in the conventional substrate processing apparatus, a plurality of chemical liquid supply nozzles are used at the same time to supply one type of chemical liquid, whereas according to the substrate processing apparatus of this embodiment, a single chemical liquid supply nozzle is used. This is because the chemical liquid is supplied using 304. However, if necessary, it is naturally possible to configure a substrate processing apparatus using a plurality of chemical solution supply nozzles 304 of the present embodiment.

  Next, a silicon substrate processing method using the substrate processing apparatus of this embodiment will be described. Here, an etching process is taken as an example.

  First, a silicon substrate 303 that is an object to be processed is placed on the turntable 301 in the processing chamber 300. The silicon substrate 303 rotates together with the turntable 301 when the drive unit 302 operates according to the rotation speed and time determined by the control system 310.

  Next, hydrofluoric acid 311 is discharged as a chemical solution onto the rotating silicon substrate 303.

  The discharged hydrofluoric acid falls on the silicon substrate 303. At this time, since the slit 105 of the chemical solution supply nozzle 304 is installed so as to be parallel to the silicon substrate 303, the hydrofluoric acid is discharged as a film parallel to the silicon substrate 303 immediately after the discharge. . Thereafter, the hydrofluoric acid 311 falls onto the silicon substrate 303 so as to draw a substantially arc while maintaining a single layer of film. Since the discharge of the hydrofluoric acid 311 is continuously performed for a time determined by the control system 310, one layer of the hydrofluoric acid 311 is continuous.

  In this way, wet etching of the silicon substrate 303 is performed by the hydrofluoric acid 311 supplied to the silicon substrate 303.

  After the wet etching process, pure water supplied by the pure water supply system 307 is discharged from the pure water supply nozzle 305 to clean the silicon substrate 303 that has been subjected to wet etching.

  Also at this time, pure water is discharged into a continuous film and falls onto the silicon substrate 303 so as to draw a parabola.

  Note that the silicon substrate 303 is rotationally dried after the wet etching process and pure water cleaning. That is, by rotating the silicon substrate 303, hydrofluoric acid or pure water remaining on the silicon substrate 303 is removed using centrifugal force.

  In wet etching, hydrofluoric acid is adjusted to, for example, 30 ° C. and supplied at a flow rate of 15 liters / minute. Pure water at the time of cleaning with pure water is adjusted to, for example, 25 ° C. and supplied at a flow rate of 15 liters / minute. Such adjustments of temperature and flow rate are set and adjusted by the chemical solution supply system 306 and the pure water supply system 307 and the control system 310 that controls them. However, all of the numerical values given above are examples, and may be set as necessary.

  Further, the hydrofluoric acid 311 and pure water used for the treatment are collected by the waste liquid treatment system 309 and processed.

  In the substrate processing apparatus of the present embodiment, only one system of chemical solution is used. However, a plurality of chemical solutions can be used by installing a plurality of chemical solution supply systems as required.

  When a substrate is processed using the substrate processing apparatus according to this embodiment, the flow rate of the fluid can be increased without increasing the force directly applied to the substrate by the fluid. For this reason, in a board | substrate, while being able to reduce damage, such as a line pattern falling down or peeling and lose | disappearing, the efficiency and productivity of a process can be improved.

  In addition, since a single fluid supply nozzle is used for a single chemical solution, the structure of the substrate processing apparatus can be simplified, and a substrate processing apparatus that performs a plurality of fluid processes in the same processing chamber can be configured. Will also be easier. Furthermore, it is possible to simplify the condition determination when performing the processing, and it is possible to determine in a short time.

  In the present embodiment, the chemical solution supply nozzle 304 and the like are installed so that the central axis 200 is horizontal. However, in the same manner as described in the first embodiment, if the fluid discharged in a continuous film form loses the horizontal driving force and falls vertically onto the substrate 303, such a configuration is used. Is not required.

(Third embodiment)
Next, a fluid supply nozzle according to a third embodiment of the present invention will be described with reference to the drawings.

  FIG. 8 is a view showing a vertical cross section of the fluid supply nozzle 150 according to the present embodiment. That is, it is a figure corresponding to Drawing 2 (b) showing the vertical section of fluid supply nozzle 100 of a 1st embodiment. Except for points to be described later, the appearance of the fluid supply nozzle 150 is the same as that of the fluid supply nozzle 100 shown in FIG. 1, and the horizontal sectional view thereof is the same as that of FIG. Therefore, in FIG. 8, the same components as those in FIG. However, both FIG. 2A and FIG. 8 are diagrams showing a schematic configuration, and the scales do not match.

  8 is different from FIG. 2B in that the discharge unit 104 and the slit 105 provided in the discharge unit 104 are bent. That is, the slit 105 includes a slit rear portion 105a extending from the liquid reservoir portion 102 along the central axis 200, and a slit front portion 105b connected to the slit rear portion 105a and extending at an angle with respect to the central axis 200. Contains. The discharge unit 104 includes the slit 105 having such a configuration.

  In addition, the cross section of the slit front part 105b is the same as that of FIG.2 (c).

  Other configurations are the same as the fluid supply nozzle 100 shown in FIGS. 1 and 2A to 2C as described above.

  If the direction of the slit front part 105b is represented by a straight line 203, it forms an angle of, for example, 60 degrees with respect to the direction of the central axis 200 in which the slit rear part 105a extends.

  When fluid is discharged using the fluid supply nozzle 150 according to the present embodiment, the fluid is discharged into a continuous film like the fluid supply nozzle 100 of the first embodiment. It is possible to have a uniform flow rate. For this reason, both of the effects of the present invention described in the first embodiment and the second embodiment can be realized.

  In addition, the fluid supply nozzle is configured by a combination of a plurality of components, and a mesh or the like is provided in the vicinity of the slit 105 of the liquid reservoir 102 to include bubbles, and the fluid of the first embodiment. Naturally, it can be used in the same manner as the supply nozzle 100.

  However, in the fluid supply nozzle 100 of the first embodiment, fluid is discharged in parallel to the central axis 200, whereas in the case of the fluid supply nozzle 150 of the third embodiment, the central axis 200 is The fluid can be discharged in the direction of the straight line 203 having an angle. This is because the slit 105 is bent. For this reason, when the fluid supply nozzle 150 is used in the substrate processing apparatus, the degree of freedom of the configuration of the substrate processing apparatus is higher than when the fluid supply nozzle 100 is used. This will be explained below.

  FIG. 9 is a schematic view showing the configuration of the substrate processing apparatus according to the third embodiment. Here, the substrate processing apparatus is the same as the substrate processing apparatus according to the second embodiment shown in FIG. 7 except that the chemical supply nozzle 354 and the pure water supply nozzle 355 which are fluid supply nozzles 150 are used. It is the composition of. Therefore, the same components as those in FIG. 7 are denoted by the same reference numerals as those in FIG. Also, the chemical solution supply system 306 provided outside the processing chamber 300 is not shown.

  In the substrate processing apparatus of the second embodiment, the fluid supply nozzle 100 is installed such that the central axis 200 is horizontal. On the other hand, in the substrate processing apparatus of the present embodiment, the chemical solution supply nozzle 354 and the pure water supply nozzle 355, which are the fluid supply nozzles 150, both have a horizontal orientation 203 of the slit front portion 105b as shown in FIG. (Parallel to the silicon substrate 303). As a result, the central axis 200 is inclined.

  Here, the chemical solution supply nozzle 354 and the like may be moved from the top of the silicon substrate 303 to other positions and stored, except when discharging the fluid. In such a case, if the central axis 200 of the chemical solution supply nozzle 354 and the like is installed to be inclined, the projected area when the substrate processing apparatus is viewed from directly above becomes small. Easy to secure space for storage.

  Therefore, more fluid supply nozzles 150 can be installed in the processing chamber 300 than the substrate processing apparatus of the second embodiment.

  Further, when the protective wall 308 that prevents the fluid from scattering in the processing chamber 300 is installed, the possibility that the protective wall 308 interferes with the chemical solution supply nozzle 354 and the like can be suppressed. This is because, unlike the case of the second embodiment, the chemical solution supply nozzle 354 and the like need not be installed horizontally, and can be installed obliquely.

  Thus, when the fluid supply nozzle 150 is used, the direction of the central axis 200 of the fluid supply nozzle and the direction 203 of the slit front part 105b, which is the direction in which the fluid is discharged, can be made different directions. The degree of freedom in designing the substrate processing apparatus increases.

  In the fluid supply nozzle 150, the slit front part 105 b is connected to the slit rear part 105 a so as to have an angle of 60 degrees with respect to the central axis 200. However, the angle may be other than 60 degrees and may be set as necessary.

  In addition, the slit 105 may have a straight structure with no bending and may be connected to the central axis 200 at an angle directly from the connecting portion with the liquid reservoir 102. Further, it may be a slit having a smoothly bent vertical section, and it is sufficient that the fluid can be discharged at an angle with respect to the central axis 200.

  As described above, the fluid supply nozzle 150 of this embodiment has the effect of increasing the degree of freedom in designing the substrate processing apparatus in addition to realizing the same effects as those of the first and second embodiments. . For example, since the space required for storage in the processing chamber 300 can be reduced, the number of fluid supply nozzles that can be installed in the processing chamber 300 can be increased.

  In this embodiment, the chemical solution supply nozzle 354 and the like are installed so that the direction 203 of the slit front portion 105b is horizontal, and the chemical solution is discharged in a film shape parallel to the substrate 303. However, as described in the first embodiment, such a configuration is not essential for the discharged fluid, and the direction 203 of the slit front portion 105b may be inclined. However, the length direction of the slit 105 is preferably horizontal.

(Fourth embodiment)
Next, a fluid supply nozzle according to a fourth embodiment of the present invention will be described with reference to the drawings.

  The fluid supply nozzle of the fourth embodiment has the same configuration as the fluid supply nozzle of the first embodiment shown in FIGS. 2A to 2C except for the points described later. Therefore, although the structure of the fluid supply nozzle which concerns on 4th Embodiment is shown to Fig.10 (a)-(c), the same code | symbol is attached | subjected about the same component as Fig.2 (a)-(c). Therefore, detailed description is omitted.

  2A to 2C, FIG. 2A shows a horizontal section of the fluid supply nozzle, and FIG. 2B shows a vertical section of the fluid supply nozzle. Further, (c) shows the cross-sectional shapes of the discharge unit 104 and the slit 105.

  The configuration of the fluid supply nozzle according to the present embodiment is different from the fluid supply nozzle of the first embodiment in the shape of the vertical cross section shown in FIG.

  In the fluid supply nozzle of the first embodiment, as shown in FIG. 2B, a straight line 201 connecting the contact points of the liquid reservoir 102 and the flow rate adjusting wall 103 and the contact points of the liquid reservoir 102 and the discharge unit 104 is formed. On the other hand, the liquid reservoir 102 has a curved shape that swells outward.

  On the other hand, in the fluid supply nozzle of the present embodiment, the liquid reservoir 102 has a shape that coincides with the straight line 201 as shown in FIG.

  As in the fluid supply nozzle of the first embodiment, it is preferable that the liquid reservoir 102 has an outwardly expanded shape because a sufficient amount of fluid can be accumulated in the liquid reservoir 102. It was a shape.

  However, depending on the type of fluid used, the dimensions of the liquid reservoir 102, and the like, even the liquid reservoir 102 having the shape as in the present embodiment accumulates a sufficient amount of fluid. It is possible to exhibit the same effect as the fluid supply nozzle.

  As a specific example, when ultrapure water is used as the fluid, the fluid inflow portion 101 has a circular shape with an inner diameter of 20 mm, and the length from the flow rate adjusting wall 103 to the discharge portion 104 along the central axis 200 is 46 mm. The dimension in the length direction of the slit 105 may be 48 mm. For example, with such dimensions, the effect of the present invention that the fluid can be discharged in a single continuous film shape can be sufficiently exhibited.

  When the substrate is processed using the fluid supply nozzle of this embodiment, the same effect as described in the first embodiment can be obtained. That is, there are effects such as reduction of variation when the substrate is processed, suppression of damage to the pattern formed on the substrate, improvement of processing efficiency and throughput.

  In addition, when the substrate processing apparatus is configured using the fluid supply nozzle of the present embodiment, effects such as simplification of the configuration of the substrate processing apparatus can be obtained, as described in the second embodiment.

  Furthermore, the fluid supply nozzle of this embodiment may be provided with a slit 105 having a bent structure, similar to the fluid supply nozzle of the third embodiment. In this way, the fluid supply nozzle described in the third embodiment is provided. The same effect as can be obtained. With respect to the configuration of the substrate processing apparatus, there is an effect that the degree of freedom is improved.

(Fifth embodiment)
Next, a fluid supply nozzle according to a fifth embodiment of the present invention will be described with reference to the drawings.

  The fluid supply nozzle of the fifth embodiment has the same configuration as the fluid supply nozzle of the first embodiment shown in FIGS. 2A to 2C except for the points described later. Therefore, although the structure of the fluid supply nozzle according to the fifth embodiment is shown in FIGS. 11A to 11C, the same components as those in FIGS. 2A to 2C are denoted by the same reference numerals. Therefore, detailed description is omitted.

  2A to 2C, FIG. 2A shows a horizontal section of the fluid supply nozzle, and FIG. 2B shows a vertical section of the fluid supply nozzle. Further, (c) shows the cross-sectional shapes of the discharge unit 104 and the slit 105.

  The configuration of the fluid supply nozzle according to the present embodiment is different from the fluid supply nozzle of the first embodiment in the shape of the horizontal cross section shown in FIG. 11A as described below.

  In the fluid supply nozzle of the first embodiment, as shown in the horizontal sectional view of FIG. 2A, the liquid reservoir 102 has a shape that extends from the flow rate adjusting wall 103 toward the discharge unit 104 in the horizontal direction. is doing.

  On the other hand, in the fluid supply nozzle of the present embodiment, as shown in the horizontal sectional view of FIG. 11A, the liquid reservoir 102 has a shape having a constant width in the horizontal direction.

  As an example, the fluid supply nozzle of this embodiment suitable for processing a silicon substrate having a diameter of 200 mm includes a fluid inflow portion 101 having an inner diameter of 50 mm. The flow rate adjusting wall 103 has a thickness of 10 mm, and the orifice 103a has a truncated cone shape with a diameter of 5 mm on the fluid inflow portion 101 side and a diameter of 4 mm on the liquid reservoir portion 102 side. Further, the slit 105 is 5 mm from the contact point with the liquid reservoir 102 to the tip (opening surface), the length in the length direction is 50 mm, and the width is 0.7 mm. Of course, a fluid supply nozzle having other dimensions and shapes may be used.

  Even when the fluid supply nozzle having such a configuration is used, the same effect as that of the fluid supply nozzle of the first embodiment can be exhibited.

  Further, by using the fluid supply nozzle of this embodiment in the substrate processing apparatus, it is possible to obtain the same effect as that of the second embodiment, and the third embodiment has a structure in which the slit 105 is bent. Similar effects can be obtained.

(Sixth embodiment)
Next, a fluid supply nozzle according to a sixth embodiment of the present invention will be described with reference to the drawings.

  The configuration of the fluid supply nozzle of the present embodiment is the first implementation shown in FIGS. 2A to 2C except that the flow rate adjusting wall 103 and the orifice 103a provided in the flow rate adjusting wall 103 are different in shape. It has the same configuration as the fluid supply nozzle of the embodiment. For this reason, FIG. 12 shows a horizontal sectional view of the fluid supply nozzle according to the sixth embodiment, but the same components as those in FIGS. To do.

  In the fluid supply nozzle of the first embodiment, the flow velocity adjusting wall 103 is a flat plate shape that divides the fluid inflow portion 101 and the liquid reservoir portion 102, and the orifice 103a provided in the flow velocity adjusting wall 103 has a fluid inflow portion. The side of the part 101 has a frustoconical shape that is widened.

  On the other hand, in the fluid supply nozzle of the sixth embodiment, the orifice 103a has a cylindrical gap 103c having a smaller cross-sectional area than the fluid inflow portion 101, and both the fluid inflow portion 101 side and the liquid reservoir portion 102 side. The taper-shaped gap 103b is provided. In other words, the orifice 103a has a structure in which the central gap 103c having a small cross-sectional area formed at the center of the flow velocity adjusting wall 103 is smoothly narrowed conically from both the fluid inflow portion 101 side and the liquid reservoir portion 102 side. have. Although the shape of the vertical cross section of the flow velocity adjusting wall 103 in the fluid supply nozzle of the present embodiment is not individually illustrated, it is the same as the horizontal cross section. However, this is not an essential element.

  The fluid supply nozzle provided with the flow rate adjusting wall 103 having such a configuration can also obtain the effect of discharging the fluid in a continuous film shape, and therefore, any of the effects of the present invention described above can be realized.

  Further, when the orifice 103a is structured as in the present embodiment, the fluid flow-in portion 101 is directed from the fluid inflow portion 101 toward the liquid reservoir portion 102 as compared with the fluid supply nozzle or the like of the first embodiment in which the flow rate adjusting wall 103 has a flat plate shape. The fluid flows smoothly. For this reason, the fluid flow rate can be increased while maintaining the film-like discharge shape, and the liquid replacement property can be improved. As a result, processing efficiency and processing speed are further improved.

  As an example, when processing a silicon substrate having a diameter of 200 mm, it is preferable to have the following dimensions and shapes. That is, it is preferable that the fluid inflow portion 101 has a circular shape with an inner diameter of 20 mm, the flow rate adjusting wall 103 has a thickness of 24 mm, and the gap 103 c has a cylindrical shape with an inner diameter and a length of 5 mm.

  As described above, the configurations of the flow velocity adjusting wall 103 and the orifice 103a are not particularly limited as long as the flow velocity is sufficiently reduced when the fluid flows into the liquid reservoir 102.

  The shape of the liquid reservoir 102 may have the same shape as any one of the first, fourth, and fifth embodiments.

  In each of the first to sixth embodiments, the silicon substrate is treated with a fluid. However, the present invention is not limited to this. In addition to this, for example, it can be used in a resist developing apparatus in a lithography process and used in pure water cleaning after development processing.

  In addition, the present invention has a particularly remarkable effect when the fluid flow rate needs to be increased and the fluid cannot be discharged at a high pressure. Specifically, for example, it can be used for the production of flat display panels such as liquid crystal display devices and PDPs. Furthermore, it can be used for manufacturing a photomask used for manufacturing them.

  In such a case, the flow rate of the fluid suitable for processing differs depending on the size of the object to be processed, but the size of each part of the fluid supply nozzle is changed, and the process is performed while maintaining a continuous continuous film-like discharge shape. What is necessary is just to make it fall on the body.

  Also, the case where processing is performed by rotating the substrate has been described. However, when processing such as a flat display panel that is larger than a silicon substrate is performed, it is difficult to perform processing by rotating the object to be processed. There is. In such a case, processing may be performed by scanning the fluid supply nozzle over the object to be processed. Alternatively, the fluid supply nozzle can be kept stationary and the process can be performed by moving the object to be processed.

  Moreover, when the processing capability by one fluid supply nozzle is insufficient, such as when the object to be processed is particularly large, it is naturally possible to supply the same fluid by a plurality of fluid supply nozzles.

  The fluid supply nozzles of any of the embodiments have the fluid inflow portion 101 and the liquid reservoir portion 102 that are symmetrical with respect to the central axis 200 in the horizontal cross section and the vertical cross section. However, this is not a requirement.

  Further, in any of the fluid supply nozzles of the embodiments, the discharge unit 104 having the slit 105 is provided as an individual member connected to the liquid reservoir 102. However, it is possible to adopt a configuration in which the slit 105 is directly provided in the liquid reservoir 102 without providing the discharge unit 104 as an individual member.

  According to the fluid supply nozzle, the substrate processing apparatus using the fluid supply nozzle, and the substrate processing method of the present invention, it is possible to reduce damage to the substrate that is the object to be processed and improve the processing efficiency and processing speed. In addition, the configuration of the substrate processing apparatus can be simplified. For this reason, it is useful for processing a substrate or the like by a fluid, and particularly useful for processing a large-diameter silicon substrate or a flat display panel.

It is a figure which shows the external appearance of an example of the fluid supply nozzle which concerns on the 1st Embodiment of this invention. (A)-(c) is sectional drawing which shows schematic structure of the fluid supply nozzle which concerns on the 1st Embodiment of this invention, (a) is a horizontal cross section, (b) shows a vertical cross section. (C) shows the cross-sectional shapes of the discharge section 104 and the slit 105. (A) is a figure which shows the mode of the fluid discharge by the fluid supply nozzle which concerns on the 1st Embodiment of this invention, (b) is the figure of the fluid discharge by the reference | standard fluid supply nozzle which is not equipped with the flow-velocity adjustment wall 103. It is a figure which shows a mode. It is a figure which shows the relationship between the fluid flow volume in the case of discharging using the fluid supply nozzle which concerns on the 1st Embodiment of this invention, and the discharge shape of a fluid. (A) is a schematic diagram which shows the normal line pattern formed in the silicon substrate, (b) is a schematic diagram which shows the line pattern destroyed by the fluid process. It is a characteristic view which shows the particle removal rate and pattern destruction rate with respect to the fluid flow rate. It is a figure which shows schematic structure of the substrate processing apparatus which concerns on the 2nd Embodiment of this invention. It is a schematic diagram which shows the vertical cross section of the fluid supply nozzle which concerns on the 3rd Embodiment of this invention. It is a figure which shows schematic structure of the substrate processing apparatus which concerns on the 3rd Embodiment of this invention. (A)-(c) is sectional drawing which shows schematic structure of the fluid supply nozzle which concerns on the 4th Embodiment of this invention, (a) is a horizontal cross section, (b) shows a vertical cross section. (C) shows the cross-sectional shapes of the discharge section 104 and the slit 105. (A)-(c) is sectional drawing which shows schematic structure of the fluid supply nozzle which concerns on the 5th Embodiment of this invention, (a) is a horizontal cross section, (b) shows a vertical cross section. (C) shows the cross-sectional shapes of the discharge section 104 and the slit 105. It is a schematic diagram which shows the vertical cross section of the fluid supply nozzle which concerns on the 6th Embodiment of this invention. It is a schematic diagram which shows the structure of the substrate processing apparatus using the conventional fluid supply nozzle. It is a top view explaining the conventional substrate processing method using a some fluid supply nozzle.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Fluid supply nozzle 101 Fluid inflow part 102 Liquid reservoir part 103 Flow rate adjustment wall 103a Orifice 103b Taper-shaped space | gap 103c Air gap 104 Discharge part 105 Slit 105a Slit rear part 105b Slit front part 150 Fluid supply nozzle 200 Center axis 201 Shape of a liquid reservoir part Straight line 202 for explaining the flow 202 Arrows 202a and 202b indicating the flow of fluid Arrow arrangement 203 Direction of slit front 210 Silicon substrate 211 Line pattern 213 Position of line pattern peeled off from silicon substrate 214 Falling line pattern 300 Processing Chamber 301 Rotary table 302 Drive unit 303 Silicon substrate 304 Chemical liquid supply nozzle 305 Pure water supply nozzle 306 Chemical liquid supply system 307 Pure water supply system 308 Protective wall 309 Waste liquid treatment system 310 Control System 354 Chemical Solution Supply Nozzle 355 Pure Water Supply Nozzle

Claims (7)

A substrate processing apparatus for supplying a fluid onto a substrate to perform surface treatment of the substrate,
A fluid supply nozzle for discharging the fluid;
A flow rate controller for controlling the flow rate of the fluid flowing into the fluid supply nozzle,
The fluid supply nozzle is
A fluid inflow portion into which the fluid flows;
A liquid reservoir connected to the fluid inflow portion and storing the fluid;
A flow rate adjusting wall provided between the fluid inflow portion and the liquid reservoir, and having an orifice for allowing the fluid to pass while reducing the flow rate;
A discharge part connected to the liquid reservoir, and having a slit for discharging the fluid by the pressure of the fluid that has passed through the orifice;
The length direction of the opening surface of the slit and the direction in which the fluid is discharged from the slit are substantially parallel to the substrate installed horizontally,
The fluid ejected from the fluid supply nozzle in a continuous film form is supplied to the substrate surface by being dropped so that the flow rate of the fluid in each part of the contact area when contacting the substrate is uniform. A substrate processing apparatus.   The substrate processing apparatus according to claim 1, wherein the slit has an opening surface in which a ratio of a length in a horizontal direction to a width in a vertical direction is 10 or more. In the cross section perpendicular to the length direction of the opening surface of the slit, the liquid reservoir,
It has a cross-sectional shape that swells on the opposite side of the flow rate adjusting wall with respect to the straight line connecting the contact point between the inner wall of the liquid reservoir part and the flow velocity adjusting wall and the contact point between the inner wall of the liquid reservoir part and the slit. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is provided. In the cross section perpendicular to the length direction of the opening surface of the slit, the liquid reservoir,
A cross-sectional shape swelled in a curved shape on the opposite side of the flow rate adjustment wall with respect to a straight line connecting the contact point between the inner wall of the liquid reservoir part and the flow rate adjustment wall and the contact point between the inner wall of the liquid reservoir part and the slit. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus includes:   The substrate processing apparatus according to claim 1, wherein the slit discharges the fluid in a direction having an angle with respect to a central axis of the fluid supply nozzle. A substrate processing method for performing a surface treatment of the substrate by supplying a fluid from a fluid supply nozzle onto the substrate,
Injecting a fluid into a fluid inflow portion of the fluid supply nozzle;
Accumulating the fluid that has flowed into the fluid inflow portion in a liquid reservoir included in the fluid supply nozzle while passing through a flow velocity adjusting wall having an orifice and reducing the flow velocity;
Discharging the fluid from a slit of a discharge unit connected to the liquid reservoir by the pressure of the fluid that has passed through the orifice;
And supplying the fluid discharged from the slit by dropping it on the substrate surface,
The fluid supply nozzle adjusts the flow rate of the fluid flowing in and discharges it in a film shape continuous from the slit and substantially parallel to the substrate, and in each part of the contact region when contacting the substrate A substrate processing method, wherein the substrate is dropped onto the substrate surface so that a fluid flow rate is uniform.   The substrate processing method according to claim 6, wherein a pattern having a pattern width of 0.13 μm or less and an aspect ratio of 2.5 or more is formed on the substrate.