JP2007260886A - Cmp conditioner and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a CMP conditioner capable of suppressing the occurrence of scratch by surely preventing dropping off of abrasive grains even when highly corrosive slurry is used for a CMP device, and a manufacturing method for the CMP conditioner without requiring a complicated manufacturing method. <P>SOLUTION: In the CMP conditioner, an abrasive grain layer 3 in which the abrasive grains 6 are stuck by a metal bonding phase 7 is formed on a conditioning surface 2 opposed to and contacting to a polishing pad of the CMP device. An oxide film 9, which is polycrystal and has no grain boundary layer composed of a glass layer in the interface between the crystals, is formed on the surface of the metal bonding phase 7 in the abrasive grain layer 3 by spraying an aerosol in which fine particles of a brittle material are dispersed in a gas. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a CMP conditioner used for conditioning a polishing pad of a CMP (Chemical Mechanical Polishing) apparatus for polishing a semiconductor wafer or the like, and a method for manufacturing the same.

As this type of CMP conditioner, for example, Patent Document 1 discloses that a plurality of substantially cylindrical protrusions are formed on the upper surface of a disk-shaped base body (base metal) at intervals, and a plurality of protrusions are formed on the surfaces of these protrusions. In the proposed method, diamond grains and other abrasive grains are fixed by a metal plating binder phase. Patent Document 2 proposes brazing diamond abrasive grains, and Patent Document 3 further discloses a ceramic coating such as SiC on the surface of the metal binder phase to which the abrasive grains are fixed, It has been proposed to coat by vapor phase coating techniques such as CVD and ion plating.
JP 2001-71269 A JP 2002-273657 A JP 2001-210613 A

  By the way, in such a CMP apparatus in which the polishing pad is conditioned by the CMP conditioner, a highly acidic or alkaline corrosive slurry is used when polishing a semiconductor wafer or the like, so that a metal binder phase holding abrasive grains is present. There is a problem that the slurry is corroded (eluted) by the slurry and the abrasive grains fall off, and the semiconductor grains are damaged by the dropped abrasive grains to cause scratches. In particular, when the abrasive grains are diamond and the binder phase is a metal plating phase such as nickel, the wettability of the metal plating on the abrasive grains is poor, so there is a very small gap at the boundary (cavity) between the two. As a result, the slurry enters from the gap and corrodes the metal plating phase, and as a result, the removal of the abrasive grains is further promoted.

  In this regard, in the CMP conditioner in which the surface of the metal binder phase is coated with a ceramic coating as described in Patent Document 3, the corrosion of the metal binder phase is protected by the ceramic coating, so that the abrasive grains fall off. Can also be suppressed. However, on the other hand, when the ceramic film is coated by the vapor phase coating technique described in Patent Document 3, the film is also coated on the surface of abrasive grains such as diamond protruding from the metal binder phase. As a result, the sharpness of the abrasive grains is impaired, and the pad polishing rate is significantly reduced. Therefore, in order to obtain a pad polishing rate that can be used as a CMP conditioner, a process of removing the coating film coated on the surface of the abrasive grains as described in Patent Document 3 is required, and the manufacturing process is required. Complicated is inevitable.

  The present invention has been made under such a background, and it is possible to reliably prevent the abrasive grains from falling off and prevent the generation of scratches even in a highly corrosive slurry used in a CMP apparatus. It is an object of the present invention to provide a conditioner and to provide a CMP conditioner manufacturing method capable of manufacturing such a CMP conditioner without requiring a complicated manufacturing process.

  In order to solve the above problems and achieve such an object, in the CMP conditioner of the present invention, abrasive grains are fixed by a metallic binder phase on a conditioning surface that is in contact with a polishing pad of a CMP apparatus. A CMP conditioner in which an abrasive layer is formed, wherein the surface of the metal binder phase in the abrasive layer is polycrystalline, and there is no grain boundary layer composed of a glass layer at the interface between the crystals. An oxide film is formed.

  Here, the oxide film is preferably an alumina film. Further, the metal bonding phase may be a metal plating phase such as nickel or a metal brazing phase.

  Furthermore, it is desirable that the abrasive grains are diamond abrasive grains, and 111 of the crystal planes are fixed so that the conditioning faces are substantially parallel to the conditioning faces and face the facing faces. In this case, in the conditioning surface, when the X-ray diffraction intensity of the crystal surface of the diamond abrasive grain is measured at a plurality of measurement points on the conditioning surface, the X-ray diffraction of each measured crystal surface is measured. It is more desirable that the ratio of the X-ray diffraction intensity of the 111 plane with respect to the total intensity is 70% or more as an average at the plurality of measurement points.

  In the CMP conditioner manufacturing method of the present invention, an abrasive layer is formed by adhering abrasive grains to a conditioning surface of a CMP conditioner that is in contact with a polishing pad of a CMP apparatus by a metallic binder phase, An oxide film is formed by injecting and colliding an aerosol in which fine particles of a brittle material are dispersed in a gas on the surface of the metal binder phase in the abrasive layer.

  According to the present invention, it is possible to provide a CMP conditioner capable of reliably preventing abrasive grains from dropping even in a highly corrosive slurry used in a CMP apparatus and suppressing the generation of scratches. Such a CMP conditioner can be manufactured without requiring a complicated manufacturing process.

First, terms related to the aerosol deposition method according to the present invention will be described below.
(Polycrystalline) In this case, it refers to a structure in which crystallites are joined and accumulated. The crystallite is essentially one crystal, and its diameter is usually 5 nm or more. However, in some cases, the fine particles are taken into the structure without being crushed, but are substantially polycrystalline.

(Fine particles) When the primary particles are dense particles, the average particle size identified by particle size distribution measurement or a scanning electron microscope is 10 μm or less. In addition, when the primary particles are porous particles that are easily crushed by impact, the average particle diameter is 50 μm or less.

(Aerosol) The above-mentioned fine particles are dispersed in a gas such as helium, nitrogen, argon, oxygen, dry air, or a mixed gas thereof, and it is desirable that primary particles are dispersed. Includes agglomerated particles with aggregated particles. The gas pressure and temperature of the aerosol are arbitrary, but the concentration of fine particles in the gas is 0.0003 ml / l to 5 ml at the time of injection from the nozzle when the gas pressure is converted to 1 atm and the temperature is converted to 20 ° C. It is desirable for formation of the structure to be within the range of / l.

(Interface) In this case, it refers to the region that forms the boundary between crystallites.

(Grain boundary layer) A layer with a certain thickness (usually several nanometers to several micrometers) located at the grain boundary in the interface or sintered body, and usually takes an amorphous structure different from the crystal structure in the crystal grain, and in some cases Is accompanied by segregation of impurities.

  In the method for manufacturing a CMP conditioner of the present invention, a method of forming an oxide film by injecting and colliding with an aerosol in which fine particles of a brittle material are dispersed in a gas is a method recognized as the aerosol deposition method. Details thereof are disclosed in Japanese Patent No. 3348154, Japanese Patent Application Laid-Open No. 2002-309383, Japanese Patent Application Laid-Open No. 2003-034003, Japanese Patent Application Laid-Open No. 2004-091614, Japanese Patent Application Laid-Open No. 2003-183848, and the like. .

  The aerosol deposition method is a technique for forming a thick ceramic film on various substrates. An aerosol in which ceramic fine particles are dispersed in a gas is sprayed from a nozzle toward the substrate, and metal, glass, ceramics and plastics are sprayed. It is characterized by colliding microparticles with a substrate such as, causing deformation and crushing of the microparticles by the impact of the collision, joining them, and directly forming a film structure composed of the constituent materials of the microparticles on the substrate In particular, a structure can be formed at room temperature that does not require heating means, and a structure having mechanical strength equivalent to that of a sintered body can be obtained. The apparatus used in this method basically consists of an aerosol generator for generating aerosol and a nozzle for injecting the aerosol toward the base material. When a structure is produced with a larger area than the opening of the nozzle, In addition, it has a position control means that moves and swings the base material and the nozzle relative to each other, and has a chamber and a vacuum pump for forming a structure when producing under reduced pressure, and for generating aerosol It is common to have a gas source.

  The process temperature of the aerosol deposition method is room temperature, and one feature is that the structure is formed at a temperature lower than the melting point of the fine particle material, that is, several hundred degrees C or less.

  The fine particles used are mainly brittle materials such as ceramics, fine particles of the same material can be used alone or in combination, and different types of fine particles can be mixed or combined. Further, it is also possible to use a part of a metal material or organic material mixed with ceramic fine particles or coated on the surface of the ceramic fine particles. Even in these cases, the main component of the structure formation is ceramics.

  In the film structure formed by this method, when crystalline fine particles are used as a raw material, the film structure is a polycrystalline body whose crystallite size is smaller than that of the raw material fine particles, and the crystals are substantially In many cases, there is no crystal orientation, and it can be said that there is substantially no grain boundary layer composed of a glass layer at the interface between ceramic crystals, and a part of the film structure forms an anchor layer that bites into the substrate surface There are many features.

  The film structure formed by this method clearly has a sufficient strength, unlike a so-called green compact in which fine particles are packed by pressure and maintained in a physical form.

  In forming this film structure, it can be determined that the fine particles are crushed and deformed by measuring the fine particles used as a raw material and the crystallite size of the formed film structure by an X-ray diffraction method.

  That is, the crystallite size of the structure formed by the aerosol deposition method is smaller than the crystallite size of the brittle material fine particles used as a raw material and the formed brittle material structure. A new surface in which atoms originally present inside and bonded to other atoms are exposed is formed on the slip surface or fracture surface formed by crushing or deforming fine particles. It is considered that the active new surface having a high surface energy is joined to the surface of the adjacent brittle material, the new surface of the adjacent brittle material, or the substrate surface, thereby forming a structure. In addition, when hydroxyl groups are present on the surface of the fine particles moderately, a mechanochemical acid-base dehydration reaction occurs due to local shear stress generated between the fine particles or between the fine particles and the structure when the fine particles collide with each other. It can be considered. The addition of continuous mechanical impact force from the outside causes these phenomena to occur continuously, and the progress and densification of joints are performed by repeated deformation and crushing of fine particles, and brittle material structures grow. it is conceivable that.

  Therefore, for example, in the CMP conditioner of the present invention manufactured by the manufacturing method of the present invention using such an aerosol deposition method, the polycrystalline condition is formed on the surface of the substrate, that is, the surface of the metal binder phase. Oxide coating that does not have a grain boundary layer consisting of a glass layer at the interface between crystals makes it possible to obtain stable corrosion resistance and to prevent the abrasive grains from falling off due to corrosion of the metal binder phase, thereby preventing the occurrence of scratches. Polishing of a high-quality semiconductor wafer or the like can be achieved while suppressing this. In particular, when an oxide film is formed by the aerosol deposition method in this way, the oxide can be reliably transferred to the boundary between the abrasive grains and the metal bonded phase by moving and swinging the nozzle as described above. In addition to forming a film, the stress due to the collision of the fine particles causes a caulking effect in which the oxide film or the substrate surface, that is, the surface of the metal bonded phase presses the abrasive grains, thereby filling the gap in the boundary itself. Thus, it is possible to hold the abrasive grains more firmly and prevent them from falling off more reliably.

  On the other hand, in this aerosol deposition method, an anchor layer in which a part of the film structure as described above bites into the surface of hard abrasive grains, particularly high hardness superabrasive grains such as diamond and cBN. Since no oxide film is formed, an oxide film is not formed. Therefore, a process for removing the film from the surface of the abrasive grains is not required after the film is formed. Moreover, since the oxide film formation by the aerosol deposition method is possible by a relatively simple method of injecting the aerosol at normal temperature and normal pressure as described above, the manufacturing method of the present invention is complicated. It is possible to provide a CMP conditioner having excellent corrosion resistance as described above without requiring a manufacturing process or an expensive apparatus.

  Here, as the oxide film, an alumina film having more excellent corrosion resistance is desirable as described above. Similarly, as described above, the metal binder phase may be a metal plating phase such as nickel described in Patent Document 1 or a metal brazing phase described in Patent Document 2. Good.

  By the way, in Patent Document 2, in a CMP processing dresser in which diamond abrasive grains are fixed to the surface of a base material by brazing, a projection line of a perpendicular of the {111} plane of the diamond abrasive grain crystal onto the dresser substrate fixing surface is projected. It has also been proposed that the minute is substantially parallel to the grinding direction of the dresser, or that the {111} plane is inclined by 15 to 75 degrees with respect to the grinding surface of the polishing cloth, and this {111} having high strength By making the surface into contact with the abrasive grains of the polishing cloth (polishing pad), the dressing is effectively performed and the chipping of the abrasive grains is made difficult to occur, and the occurrence of scratches on the object to be polished is prevented. .

  However, the conditioner used in the CMP apparatus is placed on the polishing pad rotated by the CMP apparatus in contact with the conditioning surface, and the CMP conditioner itself is rotated about an axis different from the rotation axis of the polishing pad. In addition, since the surface of the polishing pad is swung, the projected line segment of the perpendicular of the {111} plane of the abrasive grains brazed to the conditioning surface is not always parallel to the grinding direction. For example, when conditioning is performed in a state where the surface other than the {111} surface is oriented exclusively in the grinding direction, the ridge line between this surface and the surface other than the {111} surface that becomes the protruding end surface of the abrasive grains. As a result, abrasion occurs at the top and the polishing rate is remarkably lowered at an early stage, or scratches occur due to defects at these ridge lines and the top.

  Therefore, in particular, when diamond abrasive grains are used as the abrasive grains, in order to prevent such scratches due to defects in the abrasive grains themselves and an early decrease in the polishing rate, the diamond abrasive grains are used as described above. Of these, it is desirable that the 111 surface is substantially parallel to the conditioning surface and is fixed so that the conditioning surface faces in the opposite direction.

  Therefore, in such a CMP conditioner, the conditioning surface is such that 111 of its crystal faces are oriented in a direction that faces the conditioning surface substantially parallel to the conditioning surface, that is, a direction that faces the polishing pad in the CMP apparatus. In the diamond abrasive grains fixed to the surface, since the 111 surface protrudes as a protruding end surface from the conditioning surface and comes into contact with the polishing pad, a sharp portion such as a ridge line portion or a top portion between the crystal surfaces of the diamond abrasive grains Does not become a protruding end protruding toward the polishing pad. For this reason, the polishing rate is remarkably reduced due to such pointed parts being worn out at an early stage, or the surface to be polished such as a semiconductor wafer is polished by the polishing pad due to the chipping of such parts. Scratching can be prevented.

  The diamond abrasive grains cut into the polishing pad and act as the edge of the cutting edge are the high-strength and high-abrasion-resistant 111 planes and the other crystal planes adjacent to the periphery. Since the 111 surface that is the ridge line portion or the top portion and the protruding end surface is always in contact with the polishing pad even if the grinding direction of the diamond abrasive grains with respect to the polishing pad varies, the cutting edge While maintaining a good sharpness, it is less likely to wear and does not cause defects. Therefore, according to such a CMP conditioner, a high polishing rate can be stably maintained over a long period of time, and the life of the conditioner can be extended, and the polishing that is conditioned by such a conditioner can be achieved. In a semiconductor wafer or the like polished by a pad, it is possible to form a high-quality polished surface with less scratches.

  Here, of the diamond abrasive grains fixed to the conditioning surface in this way, how much of the abrasive grains are oriented in the direction in which the conditioning surface is opposed to the 111 surface substantially parallel to the conditioning surface. This can be known by measuring the X-ray diffraction intensity of the crystal plane of the abrasive grains. That is, if there are a large number of diamond abrasive grains fixed with the 111 surface oriented substantially parallel to the conditioning surface in the opposite direction, a high X-ray diffraction intensity can be obtained with respect to the 111 surface, and the diffraction intensity of the other crystal surface accordingly Therefore, the higher the ratio of the X-ray diffraction intensity of the 111 plane to the total X-ray diffraction intensity of each crystal plane including the 111 plane (hereinafter referred to as the 111-plane detection rate), the more diamond abrasives. It can be recognized that the grains are fixed in the direction opposite to the conditioning surface with the 111 surface substantially parallel to the conditioning surface.

  Therefore, based on such knowledge, as described above, in the CMP conditioner having the above-mentioned configuration, the X-ray diffraction of the crystal surface of the diamond abrasive grain is present on the conditioning surface at a plurality of measurement points on the conditioning surface. It is desirable that the 111 surface detection rate when measuring the intensity is 70% or more as an average at the plurality of measurement points, and the above-described effects can be more reliably achieved by setting the 111 surface detection rate as high as this. It becomes possible to succeed. That is, when the 111-plane detection rate is less than 70%, diamond abrasive grains fixed with other crystal planes as protrusion surfaces, or diamond abrasive grains fixed by protruding ridges or tops of crystal planes. There is a risk that the polishing rate is lowered early by these abrasive grains, or the possibility of scratches due to defects is increased.

  On the other hand, in the diamond abrasive grains having the 111 surface as a protruding end surface and facing the conditioning surface substantially parallel to the conditioning surface, the 111 surface located on the opposite side of the 111 surface is the seating surface. It is seated so as to face the conditioner side in parallel with the conditioning surface, and is fixed by the metal binder phase. For this reason, the conditioner is particularly suitable when the metal binder phase is a brazing phase and has good wettability, that is, when the brazing phase between the surface 111 and the conditioner is thin. If the surface on the side is flat, the seating surface is satisfactorily seated. Therefore, the diamond abrasive grains can be fixed so that the 111 surface, which is the tip surface, protrudes in parallel with the conditioning surface. The above-described effects can be effectively achieved.

  1 and 2 show a first embodiment of a CMP conditioner of the present invention. In this embodiment, the conditioner main body (base metal) 1 is formed in a substantially disc shape centered on the axis O by a metal material such as stainless steel, and is subjected to CMP on one circular surface perpendicular to the axis O during conditioning. A conditioning surface 2 that is in contact with the polishing pad of the apparatus is disposed, and an abrasive layer 3 is formed on the conditioning surface 2. In such a CMP conditioner, the conditioning surface 2 is brought into contact with and parallel to the polishing pad surface of the CMP apparatus, and the conditioner 2 is rotated around the axis O at a position away from the rotation axis of the polishing pad. The main body 1 itself is also swung around the inner and outer peripheries of the pad surface and used for conditioning (dressing or dressing) of the polishing pad.

  In the present embodiment, an annular end surface 4f parallel to the conditioning surface 2 and a tapered surface 4t gradually retreating from the end surface 4f toward the outer periphery are provided on the outer periphery side of the conditioning surface 2. A ring portion 4 that protrudes in an annular shape with a constant width around the axis O is formed, and on the inner peripheral side of the ring portion 4, it is also parallel to the conditioning surface 2 and has a protrusion height equal to the ring portion 4. A plurality of substantially cylindrical projections 5 having a circular end surface 5f and having the same shape and the same size are formed at intervals. However, among these, as shown in FIG. 1, the protrusion 5 forms a plurality of (three in FIG. 1) concentric circles with the axis O as the center only in the outer peripheral portion of the inner periphery of the ring portion 4. The circles are arranged at equal intervals for each circle, and adjacent circles are arranged in a staggered pattern.

  In the present embodiment, the abrasive grain layer 3 is formed on the surface of the conditioner body 1 at the end face 4 f and the tapered face 4 t of the ring part 4 and the end face 5 f of the protrusion 5. Note that the bottom surface (the portion between the protrusions 5) 2f of the conditioning surface 2 on the inner peripheral side of the ring portion 4 is a flat surface perpendicular to the axis O, and the abrasive grain layer 5 is not formed, and the end surface 4f, Strictly speaking, 5f is parallel to the bottom surface 2f and perpendicular to the direction of the axis O, and is positioned so as to protrude from each other in the direction of the axis O. Further, the inner peripheral side of the end face 4 f of the ring portion 4 is formed into a cylindrical surface centered on the axis O.

  Here, as shown in FIG. 2, the abrasive grain layer 3 is composed of a diamond abrasive grain 6 as an abrasive grain and a ring portion 4 and a metal plating phase 7 such as nickel formed by electrodeposition as a metallic binder phase. Each of the protrusions 5 is a plurality of (many) pieces dispersed and fixed in a single layer, and the diamond abrasive grains 6 protrude about 30% of the average particle diameter from the surface of the metal plating phase 7, The remaining portion is buried and held in the metal plating phase 7. The diamond abrasive grains 6 fixed by the metal plating phase 7 by electrodeposition in this way have a very small gap at the boundary portion 8 with the metal plating phase 7 because of poor wettability with the metal plating. On the surface of the abrasive layer 3, the boundary 8 is formed in a concave shape that is microscopically depressed as shown in FIG.

  Further, these diamond abrasive grains 6 are such that one of 111 crystal faces thereof is substantially parallel to the conditioning surface 2, that is, along a plane substantially perpendicular to the axis O. The surface 2 is fixed so as to face in the opposite direction, that is, in the direction facing the surface side of the polishing pad during the above-described conditioning. Therefore, in the diamond abrasive grains 6 fixed in this way, the 111 surface becomes a protruding end surface 6 a protruding from the conditioning surface 2 in the direction of the axis O.

  However, in the diamond abrasive grains 6 fixed in this way, all of them need not have the 111 surface as a protruding end surface 6a as described above and parallel to the conditioning surface 2 and not directed in the opposite direction. The 111 surface which is the surface 6 a may not be strictly parallel to the conditioning surface 2. Here, in this embodiment, the 111 plane detection rate when the X-ray diffraction intensity of the crystal plane of the diamond abrasive grain 6 is measured at a plurality of measurement points P on the conditioning surface 2 is the average at the plurality of measurement points P. 70% or more. In other words, the diamond abrasive grains 6 are oriented in the above-mentioned opposite direction substantially parallel to the conditioning surface 2 with the 111 surface as the protruding end surface 6a so that such an average 111 surface detection rate is obtained. It is fixed.

  In order to fix the diamond abrasive grains 6 so that one of the 111 surfaces becomes the projecting end face 6a directed in the opposite direction substantially parallel to the conditioning surface 2 as described above, for example, one diamond abrasive grain 6 is provided. One may be arranged and fixed on the conditioning surface 2 with the orientation of the 111 surface aligned and fixed by the metal plating phase 7. For example, the 111 surface from among the commercially available artificial diamond abrasive grains 6 may be used. The so-called hexa-octahedral or octa-hexahedral abrasive grains having a large diameter are selected and dispersed in a metal plating solution in which the conditioner body 1 is immersed so that the conditioning surface 2 faces upward. You may make it fix by depositing the phase 7. FIG. In other words, such hexagonal or octahedral hexagonal diamond abrasive grains 6 are grounded and seated with any one of the 111 large surfaces facing the conditioner body 1 side perpendicular to the axis O. Since there is a high possibility of becoming the seating surface 6b, the opposite 111 surface parallel to the 111 surface that becomes the seating surface 6b is oriented in the direction in which the conditioning surface 2 faces substantially parallel to the conditioning surface 2. The diamond abrasive grain 6 can be fixed so that the 111 surface detection rate as described above can be obtained by using the opposite 111 surface as the protruding end surface 6a.

  And in the abrasive grain layer 3 in which the diamond abrasive grains 6 are fixed by the metal plating phase 7 in this way, the surface of the metal plating phase 7 is polycrystalline, and a grain made of a glass layer at the interface between the crystals. An oxide film 9 substantially free of the boundary layer is formed. Here, this oxide film 9 is an alumina film in this embodiment.

  In one embodiment of the CMP conditioner manufacturing method of the present invention, such an oxide film 9 is conditioned by forming the abrasive grain layer 3 by adhering the diamond abrasive grains 6 by the metal plating phase 7 as described above. The surface 2 is formed by an aerosol deposition method by injecting and colliding with an aerosol in which fine particles of a brittle material are dispersed in a gas on the surface of the metal plating phase 7 in the abrasive layer 3. .

  FIG. 3 shows an aerosol deposition apparatus 20 used in the manufacturing method of this embodiment. An aerosol generator 203 is installed at the tip of a nitrogen gas cylinder 201 via a gas transport pipe 202, and on the downstream side thereof. A nozzle 206 having, for example, a 2 mm diameter inlet opening and a 10 mm × 0.4 mm outlet opening disposed in the ceramic film forming chamber 205 is connected via the aerosol transport pipe 204. The aerosol generator 203 is filled with aluminum oxide (alumina) fine particle powder as fine particles of a brittle material. Then, at the tip of the nozzle 206, for example, the conditioner body 1 on which the abrasive grain layer 3 is formed as the film-formed product 208 held on the XYZθ stage 207, the conditioning surface 2 is placed on the opening side of the nozzle 203. It is arranged toward the. The ceramic film forming chamber 205 is connected to a vacuum pump 209.

  In the embodiment of the manufacturing method of the present invention in which the oxide film 9 is formed using such an aerosol deposition apparatus 20, first, the nitrogen gas cylinder 201 is opened, and the gas is supplied to the aerosol generator through the gas transport pipe 202. At the same time, the aerosol generator 203 is operated to generate an aerosol in which aluminum oxide fine particles and nitrogen gas are mixed in an appropriate ratio. Further, the vacuum pump 209 is operated to generate a differential pressure between the aerosol generator 203 and the ceramic film forming chamber 205. The aerosol rides on this differential pressure, is introduced into the aerosol transport pipe 204 on the downstream side, accelerates, and is injected from the nozzle 206 toward the conditioning surface 2 of the conditioner body 1. The conditioner body 1 is freely swung by an XYZθ stage 207, and a film-like oxide (alumina) film 9 is formed at a desired position on the conditioning surface 2 by collision of fine particles while changing the aerosol collision position.

  Here, although the ceramic film forming chamber 205 is placed under a reduced pressure environment by the vacuum pump 209, it is not always necessary to use a reduced pressure environment, and it is possible to form a film under atmospheric pressure. The gas is not limited to nitrogen, but helium, compressed air, etc. can be used.

  Therefore, in the CMP conditioner of this embodiment manufactured as described above, the surface of the metal plating phase (metal bonding phase) 7 of the conditioning surface 2 is polycrystalline, and a glass layer is formed at the interface between the crystals. Since the oxide film 9 having no grain boundary layer is formed and coated, even when a highly acidic or alkaline corrosive slurry is used for polishing a semiconductor wafer or the like in a CMP apparatus The high corrosion resistance of the oxide coating 9 can prevent the metal plating phase 7 from corroding. In particular, since this oxide film 9 is an alumina film in this embodiment, more stable corrosion resistance can be obtained. For this reason, according to the CMP conditioner having the above-described configuration, it is possible to prevent the diamond abrasive grains 6 from dropping off due to the corrosion of the metal plating phase 7 and to generate scratches on the semiconductor wafer or the like. Thus, it is possible to polish a high-quality semiconductor wafer.

  In particular, when the oxide film 9 is formed by the aerosol deposition method as in the embodiment of the manufacturing method, the bonding of the fine particles by the active new surface in which atoms are exposed as described above. Alternatively, by forming the anchor layer by bonding the fine particles and the surface of the base material (metal plating phase 7), sufficient film strength and adhesion strength can be obtained, and the corrosion resistance to the slurry can be maintained for a long time. Moreover, when the film is formed, the aerosol is sprayed while the conditioner body 1 is swung or tilted with respect to the nozzle 206 by the XYZθ stage 207 or the like, so that the diamond abrasive grains 6 and the metal plating phase 7 are depressed. The oxide film 9 can be reliably formed on the boundary portion 8, and stress is applied to the metal plating phase 7 and the attached oxide film 9 due to the sprayed aerosol fine particles colliding with the boundary portion 8. Due to the deformation caused by the stress, a minute gap in the boundary portion 8 is filled and a caulking effect is generated in which the diamond abrasive grains 6 are pressed from the surroundings and tightened. It is also possible to more reliably prevent the occurrence of scratches.

  Further, in the aerosol deposition method, a part of the oxide film 9 is bonded to the surface of the base material by joining the colliding fine particles and the active new surface by crushing or deformation of the base material surface. Since the anchor layer is formed by biting into the substrate, the hardness is significantly higher than that of the brittle material (alumina) fine particles. For example, superabrasive grains such as the above-mentioned diamond abrasive grains 6 and cBN abrasive grains are used as the base material. In this case, the oxide film 9 is not formed on the surface. Accordingly, even when a coating having high corrosion resistance as described above is formed, the abrasive grains are not formed after the coating is formed, for example, when a ceramic coating such as SiC is coated by a vapor phase coating technique such as CVD or ion plating. There is no need for a process for removing the coating only from the surface. Further, the oxide film 9 can be formed at room temperature and at atmospheric pressure under atmospheric pressure as described above, and is a simple manufacturing method in which aerosol is simply ejected from the nozzle 206. Accordingly, a CMP conditioner having excellent corrosion resistance can be manufactured at a relatively low cost without requiring a complicated process or an expensive apparatus.

  On the other hand, in the CMP conditioner of the present embodiment, in the diamond abrasive grains 6 fixed to the ring portion 4 of the conditioning surface 2 and the end surfaces 4f and 5f of the protrusion 5, one of 111 surfaces having high strength and high wear resistance is provided. As the projecting end surface 6a, the conditioning surface 2 is substantially parallel and oriented in the direction facing the polishing pad in the opposing CMP apparatus, so that the 111 surface and the crystal surface adjacent thereto are arranged. While ensuring sharp sharpness in the ridge line part and the top part which become the edge of the cutting edge which intersected, the wear of this cutting edge part can be suppressed and a chipping can be prevented. For this reason, the polishing rate of the pad can be prevented from significantly decreasing at an early stage, and a stable and high polishing rate can be maintained over a long period of time. The occurrence of scratches can also be prevented, which makes it possible to perform further high-quality polishing.

  In addition, the diamond surface 6 in which the 111 surface can be prevented from wearing and chipping in the cutting edge portion in this way and is directed in the opposite direction substantially parallel to the conditioning surface 2 has a 111 surface detection rate of 70%. Since it is fixed at a high rate as described above, it is possible to more reliably maintain the stable high pad polishing rate as described above and prevent the occurrence of scratches. That is, when the 111 plane detection rate is less than 70%, the ratio of the diamond abrasive grains 6 in which the other crystal planes and the ridgelines and the tops of the crystal planes are directed in the facing direction increases, and the above-described effects are achieved. May not be able to be fully successful. When the X-ray diffraction intensity of the diamond abrasive grains 6 is measured in this way to calculate the 111-plane detection rate, there is a possibility that the crystal plane that is partially directed in the facing direction on the conditioning surface 2 may be biased. Therefore, the X-ray diffraction intensity is measured at a plurality of measurement points P, preferably at four or more measurement points P like the measurement point P in the first embodiment or the second embodiment described later, and the average is obtained. It is desirable to take.

  Further, in the CMP conditioner in which the protrusion 5 is formed on the conditioning surface 2 as in the first embodiment and the diamond abrasive grains 6 are fixed to the end surface 5f facing the facing direction, the protrusion 5 is protruded during conditioning. Since the diamond abrasive grains 6 do not stick to the pad on the part 5 and a high grinding pressure is secured, a sharper sharpness can be given to the cutting edge to obtain a higher polishing rate. Can be stably maintained over a long period of time, and the number of scratches can be more reliably suppressed. Furthermore, in the first embodiment, the ring portion 4 is formed on the outer peripheral side of the portion of the conditioning surface 2 where the protrusion 5 is formed, and the diamond abrasive grains 6 are also formed on the end surface 4f and the outer peripheral tapered surface 4t. Since this is fixed, it is possible to obtain an effect that the cutting edge can be bitten more effectively by suppressing the bending of the polishing pad. However, when the protrusion 5 is formed in this way, the ring portion 4 may not be formed.

  Next, FIG. 4 and FIG. 5 show a second embodiment of the CMP conditioner of the present invention, and the same reference numerals are used for parts common to the first embodiment shown in FIG. 1 and FIG. Will be omitted. In the second embodiment, the protrusion 5 is not formed on the inner peripheral side of the conditioning surface 2, and only the ring portion 4 wider than the first embodiment is formed on the outer peripheral side. However, the outer peripheral portion of the ring portion 4 from the end face 4f is a tapered surface 4t that gradually recedes toward the outer peripheral side as in the first embodiment, while the inner peripheral portion of the end face 4f is also the inner peripheral portion. The taper surface 4t gradually recedes toward the side, and the abrasive grain layer 3 is formed on the end surface 4f and both the inner and outer tapered surfaces 4t.

  Furthermore, in this embodiment, the metal binder phase that fixes the diamond abrasive grains 6 in the abrasive grain layer 3 is the metal brazing phase 10 made of a brazing material such as amorphous nickel, that is, the abrasive of the conditioner body 1. The diamond abrasive grains 6 are fixed to each other by disposing the diamond abrasive grains 6 through the brazing material at the portion where the grain layer 3 is formed, heating and melting the brazing material, and then cooling and solidifying. Also in the present embodiment, an oxide film (alumina film) 9 is formed on the surface of the metal brazing phase (metal bonded phase) 10 by the aerosol deposition method as in the first embodiment.

  In this embodiment as well, the diamond abrasive grains 6 preferably have their crystal faces so that the average of the X-ray diffraction intensities measured at the four measurement points P shown in FIG. One of the 111 surfaces is a projecting end surface 6a that is substantially parallel to the conditioning surface 2, that is, along a plane substantially perpendicular to the axis O, and in the facing direction of the conditioning surface 2 that faces the surface side of the polishing pad during conditioning. Secured to be pointed. Accordingly, the other 111 surface opposite to the protruding end surface 6a, which becomes the seating surface 6b of the diamond abrasive grain 6, is also along the plane substantially perpendicular to the axis O in the end surface 4f portion. It will be directed to the main body 1 side.

  Further, the diamond abrasive grains 6 fixed in this manner have a portion of about 30% of the average particle diameter embedded in the metal brazing phase 10 and the remaining portion is the metal brazing, contrary to the first embodiment. It is held so as to protrude from the surface of the facing phase 10. Here, the brazing material heated and melted at the time of brazing as described above has good wettability with respect to the diamond abrasive grains 6, and the metal brazing phase 10 is formed around the fixed diamond abrasive grains 6 as shown in FIG. As shown, it is formed so as to rise and come into close contact with the crystal plane disposed around the seating surface 6b.

  FIG. 6 is a schematic view showing a mold 30 used as an example in the case where the diamond abrasive grains 6 are fixed by the metal brazing phase 10 by brazing. In this example, the conditioner body 1 is placed on the graphite plate 301 with the surface to be the conditioning surface 2 facing upward, and the brazing material such as amorphous nickel is formed on the portion of the surface where the abrasive grain layer 3 is formed. The diamond abrasive grains 6 are placed on the sheet 302 and fixed by an adhesive, for example, with a handset so that one of the 111 surfaces becomes the protruding end surface 6a as described above. . Next, the outer peripheral portion of the conditioner body 1 is surrounded by a graphite ring 303, and a graphite sheet 304 is covered on the fixed diamond abrasive grains 6, and a weight plate 305 such as alumina is further formed thereon. The mold 30 is placed and accommodates the conditioner body 1.

  The mold 30 thus configured is set in a vacuum furnace (not shown), evacuated, degreased, heated brazed and cooled, so that the diamond abrasive grains 6 are fixed by the metal brazing phase 10 and the abrasive grains. A layer 3 is formed on the conditioning surface 2. Then, the conditioner body 1 thus formed with the abrasive grain layer 3 is also applied to the surface of the metal brazing phase 10 using the same aerosol deposition apparatus 20 as shown in FIG. By forming the oxide film (alumina film) 9 by the aerosol deposition method, the CMP conditioner having the above-described configuration can be manufactured.

  Therefore, for example, even in the CMP conditioner of the second embodiment manufactured as described above, the surface of the metal brazing phase (metal bonded phase) 10 that fixes the diamond abrasive grains 6 in the abrasive grain layer 3 is polycrystalline. In addition, since the oxide film 9 having no grain boundary layer made of a glass layer is formed at the interface between the crystals, even if a highly corrosive slurry is used in the CMP apparatus as in the first embodiment, Thus, it is possible to reliably prevent the generation of scratches and polish a high-quality semiconductor wafer or the like. In the second embodiment, as described above, the protrusion amount of the diamond abrasive grains 6 from the metal binder phase (metal brazing phase 10) in the abrasive grain layer 3 is, for example, the metal plating phase 7 as a binder phase. Since it is made larger than that of the first embodiment or the like, even if the oxide film 9 is formed on the surface, it prevents solid contact with the polishing pad, holds slurry, and stores and discharges chips. This space (pocket) can be ensured between the adjacent diamond abrasive grains 6, and smooth conditioning can be promoted.

  On the other hand, also in the manufacturing method of the CMP conditioner of the second embodiment, in the step of forming the oxide film 9 by the aerosol deposition method after the diamond abrasive grains 6 are fixed by the metal brazing phase 10, The same effects as in the case of manufacturing the CMP conditioner of the embodiment can be obtained. Further, since the metal binder phase is the metal brazing phase 10 and the brazing material heated and melted when the diamond abrasive grains 6 are fixed, the brazing material has good wettability, that is, the fluidity is high. The thickness of the metal brazing phase 10 between 6b and the surface of the conditioner body 1 is reduced, thereby improving the seating of the seating surface 6b and making the seating surface 6b parallel to the surface of the conditioner body 1 It can be seated in a close state. For this reason, in the end face 4f portion perpendicular to the axis O of the ring portion 4, the 111 face which is the protruding end face 6a on the opposite side of the seating face 6b is also more reliably perpendicular to the axis O with respect to the conditioning face 2 described above. Therefore, the high polishing rate as described above can be stably maintained for a long period of time, and scratches due to the diamond abrasive grains 6 can be effectively prevented.

  Moreover, in the manufacturing method of the present embodiment, in the mold 30 used when the diamond abrasive grains 6 are fixed by the metal brazing phase 10, the diamond abrasive grains 6 placed on the sheet 302 made of the brazing material are bonded to the graphite. A load is applied by the weight plate 305 through the sheet 304, and the mold 30 is set in the vacuum furnace in this state, and the brazing material sheet 302 is heated and melted. Therefore, the seating surface 6b and the projecting end surface 6a are more reliably provided. Can be fixed perpendicularly to the axis O to fix the diamond abrasive grains 6. In particular, by using the sheet 302 of the amorphous metal brazing material, it is possible to minimize the movement of the diamond abrasive grains 6 without shrinkage of the brazing material at the time of melting, and the high fluidity as described above. It is possible to obtain the advantage that the holding time in the heated state can be shortened, the thickness variation of the metal brazing phase 10 can be reduced, and the handling thereof is easy. Further, since the sheet 302 is placed on the surface of the conditioner body 1 without using an adhesive or the like, the diamond abrasive grains 6 may be displaced due to the gas generated from the adhesive during brazing, It is also possible to suppress breakage and deterioration of the vacuum degree in the vacuum furnace.

  Next, the effect of the present invention will be demonstrated with examples of the present invention. In this example, first, except that the 111 plane detection rate of the X-ray diffraction intensity of the crystal surface of the diamond abrasive grain 6 at the plurality of measurement points P of the conditioning surface 2 is less than 70% on average, Two types of CMP conditioners based on the second embodiment and two types of CMP conditioners based on the first and second embodiments in which the 111-surface detection rate was 70% or more were manufactured. These are referred to as Examples 1 to 4 in order. Therefore, in Examples 1 and 3, an oxide film (alumina film) 9 is formed on the surface of the metal plating phase 7 as a metal binding phase, and in Examples 2 and 4, a similar oxide film 9 is formed on the surface of the metal brazing phase 10. Is formed. In addition, as a comparative example for these, CMP conditioners similar to those of Examples 1 to 4 were also manufactured except that the oxide film 9 was not formed. These are referred to as Comparative Examples 1 to 4.

In the CMP conditioners of Examples 1 and 3 and Comparative Examples 1 and 3, the conditioner body 1 has an outer diameter of the conditioning surface 2 (outer diameter of the conditioner body 1) of 101.6 mm, and an inner diameter of the ring portion 4. Is 90 mm, the outer diameter of the end surface 4 f is 94 mm, the outer diameter of the ring portion 4 including the tapered surface 4 t is 97 mm, the outer diameter of the protrusion 5 is 2 mm, and the ring portion 4 and the protrusion from the bottom surface 2 f of the conditioning surface 2 The protruding height of 5 (the height of the end faces 4f and 5f) is 0.3 mm. In addition, the protrusions 5 are arranged as shown in FIG. 1 on concentric circles with the axis line O as the center and at substantially equal intervals in a range of an annular surface centering on the axis line O having an inner diameter of 67 mm and an outer diameter of 85 mm. Yes. Further, the abrasive grains are diamond abrasive grains 6 having an average particle diameter of 160 μm, and the degree of concentration is 40 / mm ² as the number of diamond abrasive grains fixed per unit area in the abrasive grain layer 3. 7 is a nickel plating phase.

  When manufacturing the CMP conditioners of Examples 1 and 3 and Comparative Examples 1 and 3, first, the conditioner body 1 made of stainless steel (SUS304) as a base metal is washed to remove oil on the surface, and diamond After masking the parts other than the electrodeposited abrasive grains 6, pretreatment such as degreasing, acid activation treatment, nickel strike plating, etc. is performed, followed by underplating with nickel, and this is a nickel plating solution in which diamond abrasive grains 6 are dispersed The diamond abrasive grains 6 are fixed while depositing a nickel plating phase on the portion of the conditioning surface 2 where the abrasive grain layer 3 is formed by electrolytic plating, and the nickel abrasive grains 6 are removed while removing the excessive diamond abrasive grains 6. The plating phase is grown and diamond abrasive grains 6 are embedded, and then it is lifted from the plating tank and washed, and finally the masking is removed. It was prepared by Rukoto.

  Here, in Example 3 and Comparative Example 3 in which the 111-surface detection rate is 70% or more, as the diamond abrasive grains 6 dispersed in the nickel plating solution in the plating tank, six-eighth from commercially available artificial diamond abrasive grains. A group of diamond grains containing a large number of faceted or octahedral hexagonal grains is selected by observing with a microscope, and when the diamond grains 6 are fixed, the nickel plating solution is irradiated with ultrasonic waves. Thus, the diamond abrasive grains 6 are aligned so that the 111 surfaces serving as the seating surface 6b and the projecting end surface 6a are perpendicular to the axis O. On the other hand, in Example 1 and Comparative Example 1 in which the 111-surface detection rate is less than 70%, the commercially available artificial diamond abrasive grains having the above average particle diameter are dispersed as they are in the nickel plating solution without performing ultrasonic irradiation. Stuck.

  Further, in the CMP conditioners of Examples 2 and 4 and Comparative Examples 2 and 4, the outer diameter of the conditioner main body 1 (the outer diameter of the conditioning surface 2) is the same as that of Examples 1 and 3 and Comparative Examples 1 and 3. 6 mm, the ring portion 4 has a protruding height from the bottom surface 2 f of the conditioning surface 2 of 1 mm, the inner surface 6f has an inner diameter of 68.7 mm, an outer diameter of 94.1 mm, and includes an inner and outer tapered surface 4 f. Has an inner diameter of 61.1 mm and an outer diameter equal to the outer diameter of the conditioning surface 2. In addition, the material of the conditioner main body 1 used as a base metal, the average particle diameter of the diamond abrasive grains 6 to be fixed, and the degree of concentration are the same as those in Examples 1 and 3 and Comparative Examples 1 and 3.

  When manufacturing the CMP conditioners of Examples 2 and 4 and Comparative Examples 2 and 4, the conditioner body 1 is first placed on the graphite plate 301 as shown in FIG. An amorphous nickel brazing filler metal sheet (MBF-20 manufactured by Meto Glass Co., Ltd.) 302 is placed on the portion where the abrasive layer 3 is formed, and an adhesive (product name: spray paste ZERO manufactured by Sekisui Chemical Co., Ltd.) is placed thereon. The diamond abrasive grains 6 are adhered and fixed, and the outer periphery thereof is surrounded by the graphite ring 303, and a graphite sheet (PF manufactured by Toyo Tanso Co., Ltd.) is formed on the diamond abrasive grains 6. -50) Covering 304, and further placing thereon an alumina weight plate (mass 450 g) 305 having a disk shape of the same size as the conditioning surface 2 Containing the conditioner body 1 Te constituted the die 30.

Then, this mold 30 is set in a vacuum furnace, first evacuated to the 10 ⁻⁵ Torr level and held at 550 ° C. for 5 minutes to remove the decomposing gas of the adhesive and degrease, then 10 ⁻ The brazing filler metal sheet 302 is heated and melted and brazed by holding it at 1050 ° C. for 5 minutes on a ⁴ Torr stand, cooled to 200 ° C. or lower, taken out from the vacuum furnace, and further removed from the mold 30 by a CMP conditioner. Was taken out.

  Here, in Example 4 and Comparative Example 4 in which the 111-surface detection rate is 70% or more, the diamond abrasive grains 6 are made from commercially available artificial diamond abrasive grains as in the case of Example 3 and Comparative Example 3 described above. The brazing filler metal sheet 302 described above, in which a group of diamond grains containing a large number of faceted or octahedral hexagonal grains is selected by observing under a microscope, and each of which is coated with an adhesive by a handset. Above, it fixed and brazed so that one of 111 surfaces may become upward as the protrusion surface 6a, ie, the direction where the conditioning surface 2 opposes. On the other hand, in Example 2 and Comparative Example 2 where the 111-surface detection rate was less than 70%, the commercially available artificial diamond abrasive grains having the above average particle diameter were brazed simply by being fixed at random.

  And in Examples 1-4 which concern on this invention among the CMP conditioners in which the abrasive-grain layer 3 was formed in this way, all have an average particle diameter of 0.6 micrometer by the aerosol deposition apparatus 20 shown in FIG. Example 1 An aerosol is generated by using alumina particles at a flow rate of nitrogen gas of 7 l / min, and is sprayed from a nozzle 206 having a 2 mm diameter inlet opening and a 10 mm × 0.4 mm outlet opening as described above. An oxide film (alumina film) 9 having a film thickness of 3 to 5 μm was formed on the surface of the metal plating phase 7 in Examples 1 and 3 and on the surface of the metal brazing phase 10 in Examples 2 and 4, respectively. .

  With respect to these Examples 1 to 4 and Comparative Examples 1 to 4, as shown in FIGS. 1 and 3, the diamond abrasive grains 6 were measured at a plurality (four) of measurement points P in the abrasive grain layer 3 of the conditioning surface 2. The X-ray diffraction intensity of the 111 plane and the X-ray diffraction intensity of other crystal planes were measured. Table 1 shows the result and the result of calculating the 111-surface detection rate based on this result as the average of the four measurement points P. In the measurement of the X-ray diffraction intensity, the measuring device is manufactured by Rigaku Corporation, model number RINT2000 / ULTIMA +, the used tube (target) is Cu (Kα), the voltage is 40 kV, the current is 40 mA, and the slit is 1 ° -0.3 mm. -1 °, measurement range 2θ = 35 ° to 145 °, step width 0.02 °, scanning speed 3 ° / mm, and the measurement points P are respectively the end face 4f of the ring portion 4 and the tapered surface 4t on the outer peripheral side. The spot circles were inscribed in the ridge line within a range not exceeding the circular ridge line, and were located at equal intervals at 90 ° intervals in the circumferential direction around the axis O, and the spot diameter was 10 mm.

  Then, with the CMP conditioners of Examples 1 to 4 and Comparative Examples 1 to 4, the silicon wafer was polished with the polishing pad while conditioning the polishing pad in the CMP apparatus under the same conditions. The number of scratches generated on the wafer at each predetermined conditioning time and the pad polishing rate (μm / h) were measured. The results are shown in Table 2 for the number of scratches and Table 3 for the pad polishing rate. The polishing pad is a foamed polyurethane pad (trade name: IC1000) manufactured by Rohm and Haas, the outer diameter is 360 mm, and the platen (pad) rotational speed is 80 rpm. p / m, conditioner rotation speed is 80 r. p. m, the conditioner rocking speed is 3000 mm / min, and while applying a load of 49 N to the conditioner body 1, 100 ml / ml of slurry for STI (CES-333-2.5 manufactured by Seimi Chemical Co., Ltd.) is used as the slurry. Conditioning was performed while feeding at min.

  Among these, as for the number of occurrences of scratches, first, from the results of Table 2, in the CMP conditioners of Comparative Examples 1 to 4 in which only the abrasive grain layer 3 was formed and the oxide film 9 was not formed, 15 after the start of conditioning. In 19 hours, scratches were observed. In Comparative Examples 1 and 2 with a low 111 surface detection rate, scratches occurred earlier than in Comparative Examples 3 and 4 with a high 111 surface detection rate. On the other hand, in the CMP conditioners of Examples 1 to 4 according to the present invention, no occurrence of scratch was observed even 21 hours after the start of conditioning regardless of the 111-plane detection rate and the type of the metal bonded phase.

  On the other hand, with respect to the pad polishing rate, at the beginning of conditioning, the 111 plane detection rate is low, that is, the crystal plane other than the 111 plane and the ridge line portion or the top portion of the crystal planes are opposed to the polishing pad. In particular, in Example 1 and Comparative Example 2 and the like, a higher polishing rate was obtained for each of the other Examples and Comparative Examples. Including these, Example 1 with a 111-surface detection rate of less than 70%, In Example 2 and Comparative Examples 1 and 2, the polishing rate was remarkably lowered with the passage of the conditioning time, which was not preferable from the viewpoint of maintaining a stable polishing rate. On the other hand, in the CMP conditioners of Examples 3 and 4 and Comparative Examples 3 and 4 having a high 111-surface detection rate of 70% or more, the initial condition is slightly polished compared to Example 1 and Comparative Example 2 above. Although the rate is low, it can be seen that the decrease in the polishing rate over time is kept small, that is, stable conditioning is performed over a long period of time.

  Therefore, in consideration of solving the basic problem as a CMP conditioner for preventing the occurrence of scratches, Examples 1 to 4 according to the present invention in which the oxide film 9 is formed are superior to Comparative Examples 1 to 4. In addition, considering the stability of the pad polishing rate, it can be evaluated that the CMP conditioners of Examples 3 and 4 are excellent.

It is the top view seen from the direction side which the conditioning surface 2 shows which shows 1st Embodiment of the CMP conditioner of this invention. It is an expanded sectional view of the abrasive grain layer 3 in embodiment shown in FIG. It is a figure which shows the aerosol deposition apparatus 20 concerning one Embodiment of the manufacturing method of CMP conditioner of this invention. It is the top view seen from the direction side which the conditioning surface 2 shows which shows 2nd Embodiment of the CMP conditioner of this invention. It is an expanded sectional view of the abrasive grain layer 3 in embodiment shown in FIG. It is the schematic which shows the type | mold 30 which accommodated the conditioner main body 1 used for manufacturing embodiment shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Conditioner main body 2 Conditioning surface 3 Abrasive grain layer 4 Ring part 4f End face of ring part 5 Projection part 5f End face of projection part 6 Diamond abrasive grain (abrasive grain)
6a End face of diamond abrasive grain 6b Seating surface of diamond abrasive grain 7 Metal plating phase (metal bonded phase)
8 Boundary between diamond abrasive grains 6 and metal plating phase 7 9 Oxide coating 10 Metal brazing phase (metal bonding phase)
20 Aerosol Deposition Equipment 30 Type O Conditioner Body 1 Axis

Claims (7)

  A CMP conditioner in which an abrasive grain layer in which abrasive grains are fixed by a metal binder phase is formed on a conditioning surface that is in contact with and in contact with a polishing pad of a CMP apparatus, wherein the metal binder phase of the abrasive grain layer A CMP conditioner characterized in that an oxide film which is polycrystalline and has no grain boundary layer formed of a glass layer at the interface between the crystals is formed on the surface.   The CMP conditioner according to claim 1, wherein the oxide film is an alumina film.   The CMP conditioner according to claim 1, wherein the metal binder phase is a metal plating phase.   The CMP conditioner according to claim 1 or 2, wherein the metal binder phase is a metal brazing phase.   The abrasive grains are diamond abrasive grains, and 111 of the crystal faces thereof are substantially parallel to the conditioning surface, and are fixed so that the conditioning surfaces are directed in the opposite direction. The CMP conditioner according to any one of claims 1 to 4.   In the conditioning surface, when the X-ray diffraction intensity of the crystal surface of the diamond abrasive grain is measured at a plurality of measurement points on the conditioning surface, the total X-ray diffraction intensity of each crystal surface measured is measured. 6. The CMP conditioner according to claim 5, wherein an X-ray diffraction intensity ratio of the 111 surface is 70% or more as an average at the plurality of measurement points. Abrasive grains are fixed to the conditioning surface of a CMP conditioner that is in contact with the polishing pad of the CMP apparatus by a metal binder phase to form an abrasive grain layer, and then the surface of the metal binder phase in the abrasive grain layer is A method of manufacturing a CMP conditioner, comprising forming an oxide film by spraying and colliding an aerosol in which fine particles of a brittle material are dispersed in a gas.

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