JP2007235304A - Electronic component and manufacturing method therefor, and communications equipment using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem wherein an electronic component, such as, a filter and a duplexer packaged in a wafer level using a silicon substrate undergoes deterioration in modulation distortion characteristics due to a disturbance waves. <P>SOLUTION: A functional element 120 comprises a piezoelectric body layer 121, and an upper electrode 122 and a lower electrode 123 formed in a way of holding the layer 121 therebetween, and is formed via an insulating film (not shown) or the like, on a board 110 formed with a cavity 113 provided so as not to hinder the mechanical vibration of the functional section. The board 110 is formed with a terminal electrode 112 and a via-hole 111 for connecting the terminal electrode 112 to a wiring electrode of the functional section, the cavity 131 is formed in a vibration region of the functional section 130 of a lid part 130, and a magnetic thin film 140 is formed outside the lid part 130. Due to the magnetic field of the magnetic thin layer formed in the lid part 130, nonlinear distortion level can be improved. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an electronic component such as a surface acoustic wave device, a piezoelectric bulk wave device, and a mechanical switch, a manufacturing method thereof, and a communication device using the same.

  Components built in portable electronic devices are required to be smaller and lighter while maintaining high performance. For example, a filter or duplexer for selecting a high-frequency signal used in a mobile phone is required to be small and have a small insertion loss. As one of the filters that satisfy these requirements, a surface acoustic wave (SAW) device using piezoelectric vibration and a film bulk acoustic resonator (FBAR) device are known.

  FIG. 11 shows a cross-sectional view of a conventional thin film bulk acoustic wave resonator device as an example of an electronic component. Here, reference numeral 610 denotes a first substrate, 611 denotes a hollow portion, 620 denotes a thin film bulk acoustic wave resonator (functional portion) composed of a piezoelectric layer 621 and upper and lower electrodes 622 and 623, and is disposed on the first substrate 610. It is formed. Reference numeral 630 denotes a lid portion, which includes an external terminal 631, a via hole 632, and a hollow portion 633. Reference numeral 640 denotes a second substrate that seals the cavity of the first substrate.

  A plurality of thin film bulk acoustic wave resonators 620 including a piezoelectric layer 621 such as aluminum nitride and upper and lower electrodes 622 and 623 sandwiching the piezoelectric layer 621 such as aluminum nitride are formed on the first substrate made of silicon. The filter characteristics can be obtained by electrically connecting the resonators. Cavities 611 and 633 are formed in the first substrate 610 and the lid 630 so as not to hinder the mechanical vibration of the thin film bulk wave resonator 620. Further, a plurality of via holes 632 are formed in the lid portion 630 and filled with metal, whereby electrical connection between the external terminal 631 and the wiring electrode of the functional portion is achieved. In order to seal the cavity 611 of the first substrate 610, the second substrate 640 is bonded to the second substrate, which is also made of silicon, using a glass frit or the like.

  Thereby, it is possible to obtain an electronic component that can be easily handled by a conventional pick-and-place machine and is hermetically packaged (see, for example, Patent Document 1).

  Furthermore, as shown in FIG. 12, a package structure suitable for frequency adjustment of a surface acoustic wave device is known. In FIG. 12, reference numeral 710 is a base substrate, 712 is an external terminal, 714 is a bonding member, 715 is a conductive member, 721 and 723 are electrodes, 722 is an insulating member, and 730 is a surface acoustic wave resonator.

  A capacitor and a coil are formed on the insulating member 714, and the capacitance and inductance thereof are adjusted by pattern cutting to adjust the frequency of the surface acoustic wave resonator. The thermal stress caused by the difference in thermal expansion coefficient between the substrate constituting the surface acoustic wave resonator 730 and the base substrate 710 is relaxed by the insulating member 722 and the bonding member 714, and affects the characteristics of the surface acoustic wave resonator 730. Don't give.

  Thereby, after mounting the surface acoustic wave resonator, frequency adjustment can be performed easily and accurately, and a highly reliable electronic component free from frequency shift caused by stress change or the like can be obtained (for example, see Patent Document 2). ).

As described above, it is possible to package at the wafer level without using a metal or ceramic multi-layered box package that has been used in the past, and by packaging electronic components that do not require wire bonding. A low-profile and highly reliable electronic component can be obtained. Furthermore, an electronic component that can be easily mounted on a circuit board can be obtained by using an auxiliary board. Furthermore, by providing a frequency adjustment function, an electronic component having excellent electrical characteristics can be obtained.
JP-T-2004-503164 JP 2004-364139 A

  However, the conventional configuration shown in FIGS. 11 and 12 has a new problem that the intermodulation distortion characteristic of the electronic component deteriorates due to the miniaturization of the device using the wafer level package structure. Specifically, in a high-frequency filter, duplexer, high-frequency mechanical switch, or the like, there is a problem that intermodulation distortion characteristics deteriorate in a reception band due to a transmission signal and an interference wave coming from the outside such as an antenna.

  SUMMARY OF THE INVENTION The present invention solves the above-described conventional problems, and an object thereof is to provide an electronic component having good intermodulation distortion characteristics and a manufacturing method thereof without increasing the size of the electronic component.

  In order to solve the above-described problems, an electronic component of the present invention includes a functional element including a substrate, a functional unit formed on at least one main surface of the substrate, and one main substrate of the substrate on which the functional unit is formed. A lid disposed on the surface side; and at least one of the substrate or the lid, and a wiring electrode for electrical connection to the outside, and a magnetic material layer on at least one of the substrate or the lid It is characterized by having prepared.

  Furthermore, the electronic component of the present invention is disposed on the one main surface side of the substrate on which the functional element including the substrate and the functional portion formed on at least one main surface of the substrate is formed, and the functional portion. A lid, and at least one of the substrate or the lid, provided with a wiring electrode for electrical connection to the outside, the wiring electrode including a via hole formed in the substrate or the lid, A magnetic material layer is provided on at least a part of the side wall of the via hole.

  Furthermore, the electronic component of the present invention is disposed on the one main surface side of the substrate on which the functional element including the substrate and the functional portion formed on at least one main surface of the substrate is formed, and the functional portion. A lid, and at least one of the substrate or the lid, provided with a wiring electrode for electrical connection to the outside, the wiring electrode including a via hole formed in the substrate or the lid, The via hole is filled with a magnetic material.

  The method for manufacturing an electronic component of the present invention includes at least a step of forming a functional part on a substrate, a step of bonding the functional unit and the lid, and a magnetic material layer on a part of the substrate or the lid. Forming.

  Furthermore, in the method for manufacturing an electronic component of the present invention, at least a step of forming a functional part on a substrate, a step of bonding the functional unit and the lid, and forming a via hole in a part of the substrate or the lid. And a step of forming a magnetic material layer on at least a part of the side wall of the via hole.

  Furthermore, in the method for manufacturing an electronic component of the present invention, at least a step of forming a functional part on a substrate, a step of bonding the functional unit and the lid, and forming a via hole in a part of the substrate or the lid. And a step of filling the via hole with a magnetic material.

  According to the electronic component of the present invention, an electronic component having high reliability and excellent high frequency characteristics such as intermodulation distortion characteristics can be obtained without greatly changing the conventional structure.

  Furthermore, according to the method for manufacturing an electronic component of the present invention, an inexpensive and small electronic component having excellent high frequency characteristics such as intermodulation distortion characteristics can be obtained without adding a complicated process.

  Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1)
FIG. 1 is a cross-sectional view schematically showing the structure of an electronic component according to Embodiment 1 of the present invention. In FIG. 1, 110 is a substrate, 111 is a via hole, 112 is an external terminal, 113 is a cavity, 120 is a functional element, 121 is a piezoelectric layer, 122 is an upper electrode, 123 is a lower electrode, 130 is a lid, and 131 is a cavity. 140 are magnetic layers.

  In the present embodiment, a thin film bulk wave resonator device using a piezoelectric thin film is used as an electronic component. The functional element 120 includes a piezoelectric layer 121 and an upper electrode 122 and a lower electrode 123 formed so as to sandwich the piezoelectric layer 121, and aluminum nitride (AlN) is used as the piezoelectric layer 121. In addition to aluminum nitride, other piezoelectric thin films such as zinc oxide (ZnO) and lead zirconate titanate (PZT) may be used. Further, although molybdenum (Mo) is used as the electrodes 122 and 123, the present invention is not limited to this.

  The functional unit 120 is formed on an insulating film (not shown) by using a conventional process such as sacrificial layer etching on a substrate 110 made of silicon in which a cavity 113 provided so as not to inhibit mechanical vibration of the functional unit is formed. ) And the like. In addition, a sapphire substrate or a glass substrate may be used as the substrate. In the substrate, a terminal electrode 112 and a via hole 111 for connecting the terminal electrode 112 and the wiring electrode of the functional part are formed.

  The lid part 130 is made of silicon like the substrate 110, and a cavity part 131 is formed in the vibration region of the functional part 120. The substrate 110 and the lid part 130 can be joined together by using a glass frit, a metal layer, a covalent bond by surface activity, or using an organic adhesive, but there are no restrictions on the joining method. Absent. Further, a Fe—Ni-based magnetic thin film 140 was formed on the lid 103. As the magnetic thin film, an inexpensive magnetic film containing cobalt, manganese, chromium or the like can be formed. Furthermore, an organic material carrying a magnetic metal may be used. The magnetic thin film may be a multilayer film, and a protective film such as silicon oxide or silicon nitride may be further formed on the magnetic thin film.

  In the present embodiment, a piezoelectric thin film and a thin film bulk wave resonator device formed so as to sandwich the piezoelectric thin film are shown.

  Here, FIG. 2A is a configuration example of a ladder circuit. Series resonators 202a, 202b, and 202c are connected in series between the input terminal 201a and the output terminal 201b. In addition, one terminal of the parallel resonator 203a is connected in parallel between the series resonators 202a and 202b, and the other terminal is grounded via the inductor 205a. Further, one terminal of the parallel resonator 203b is connected in parallel between the series resonators 202b and 202c, and the other terminal is grounded via the inductor 205b.

  On the other hand, FIG. 2B is a configuration example of a lattice circuit. A series resonator 202 is connected between the input terminal 201a and the output terminal 201b. One terminal of the parallel resonator 203a is connected in parallel between the input terminal 201a and the series resonator 202, and the other terminal is grounded via the inductor 205a. Also, one terminal of the parallel resonator 203b is connected in parallel between the output terminal 201b and the series resonator 202, and the other terminal is grounded via the inductor 205b. Further, the terminals of the inductors 205 a and 205 b that are not grounded are connected via the bypass resonator 204.

  As described above, the series resonators 202, 202a, 202b, and 202c, the parallel resonators 203a and 203b, and the bypass resonator 204 having appropriate different resonance frequencies may be configured as a ladder type (FIG. 2A) or a lattice type (see FIG. 2 (b)), a band pass filter can be configured. The circuit configuration of the band pass filter is not limited to the configuration shown in FIG.

  FIG. 3 is a cross-sectional view schematically showing the structure of a duplexer including two filters having different pass frequency bands. In FIG. 3, 110 is a substrate, 120a is a transmission filter, 120b is a reception filter, 130 is a lid, and 140 is a magnetic layer.

  FIG. 4 is a block diagram of the duplexer, which includes transmission / reception terminals 301 and 302, an antenna terminal 303, transmission / reception filters 304 and 306, and a phase shift circuit 305 (not shown in FIG. 3). ing. When configuring a duplexer, a plurality of separate thin film bulk acoustic wave resonator devices shown in FIG. 1 may be connected on another substrate such as a mother substrate, but they are formed on the same substrate 110. Is preferred. Thereby, a smaller electronic component can be obtained.

  Next, intermodulation distortion characteristics will be described using this duplexer.

  FIG. 5 is a block diagram simply showing a wireless unit of a wireless communication device that performs simultaneous transmission and reception such as a mobile phone. In FIG. 5, 501 is a transmission terminal, 502 is a reception terminal, 503 is a baseband (BB) unit, 504 is a power amplifier (PA), 507 is a duplexer comprising a transmission filter 505 and a reception filter 506, and 508 is a low noise amplifier. (LNA) and 509 are antennas.

  A signal input from the transmission terminal 501 is modulated by the baseband unit 503, and the signal is amplified by the power amplifier 504. Then, the signal is filtered through the transmission filter 505, and a signal in the transmission band is transmitted from the antenna 509. At this time, the duplexer is designed so that the transmission signal does not enter the reception filter 506. The signal received from the antenna 509 is filtered through the reception filter 506 without going around the transmission filter, amplified by the LNA 508, demodulated by the baseband 503, and transmitted to the reception terminal 502.

  In a situation where a plurality of channels and systems using various radio frequencies are mixed, signals (interfering waves) having a plurality of frequency components are received from the antenna 509. For example, the transmission signal of the own terminal and the interference wave signal from the antenna are distorted due to nonlinearity of each component such as a duplexer, and when this signal enters the reception band, a failure such as a deterioration in reception level occurs. For example, when signals having different frequencies of fa and fb are input, second harmonics faX2 and fbX2 are generated due to nonlinearity of electronic components. A signal such as (2fa-fb) or (2fb-fa) is generated as the third-order intermodulation distortion (IM3) by the harmonics and the fundamental waves f1 and f2.

  Conventionally, it is a signal at a level that has not been a problem with duplexers using metallic packages or large ceramic packages, etc., but electronic components are rapidly becoming smaller, such as moisture resistance of functional elements themselves Due to the improved reliability, when a resin-molded duplexer is used, it becomes a level that cannot be ignored, which is a cause of deterioration of the call quality of the radio.

  FIG. 6 shows an example of a measurement system for intermodulation distortion characteristics. In FIG. 6, 401 and 411 are signal generators (SG), 402 is a power amplifier (PA), 407 is a duplexer comprising a transmission filter 405 and a reception filter 406, and 409 is a spectrum analyzer (SA).

  In this embodiment, assuming a North American PCS system, a transmission filter having a transmission band of 1850 MHz and 1910 MHz from a signal generator 401 and having a passband of a power amplifier 402, an isolator 403, and 1850 to 1910 MHz is provided. After that, the antenna end of the duplexer 407 was controlled to be 20 dBm.

  Next, as a disturbing wave, when the transmission frequency is Tx and the reception frequency is Rx from the signal generator 411, (Rx−Tx) = 80 MHz, (Rx + Tx) = 1770 MHz to 1830 MHz, (2Tx−Rx) = 3780 MHz. A frequency of ˜3900 MHz and (2Tx + Rx) = 5630 MHz to 5810 MHz was generated. The signal generated here passed through a reception filter 406 having a passband of 1930 to 1990 MHz, and a distortion level was measured by a spectrum analyzer 409. The signal level of the interference wave was 0 to 5 dBm, the reception level was measured, the distortion at the time of -15 dBm input was obtained from the exterior, and the conventional electronic component and the electronic component of the present invention were compared.

  First, when the interference wave is (Rx−Tx), in the case of the conventional duplexer, when the transmission signal is 1850 MHz to 1910 MHz, the distortion is about −70 dBm to −80 dBm, but the structure of the present invention. When the duplexer was used, it was confirmed that the distortion was −120 dBm or less over the entire band, which was greatly improved.

  When the interference wave is (Rx + Tx), it is about −80 dBm in the conventional configuration, whereas it is −110 dBm or less in the configuration of the present invention. Similarly, when the interference wave is (2Tx−Rx), the conventional configuration is −70 to −95 dBm, and the configuration of the present invention is −120 dBm or less. Furthermore, when the interference wave is (2Tx + Rx), the conventional configuration is approximately −100 dBm, whereas the configuration of the present invention can ensure −120 dBm or less.

  As described above, the non-linear distortion level can be significantly improved by the magnetic field of the magnetic layer formed on the lid against various interference waves, and an electronic component having excellent electrical characteristics can be obtained. . In addition, by using the electronic component of the present invention, a communication device excellent in call quality can be realized.

  The measurement of intermodulation distortion is not limited to the measurement system used in the present invention. In addition, it is preferable to use an isolator or a band pass filter as necessary to protect the measurement system. Moreover, although the effect of implementation on the duplexer has been described, in the case of measurement of a bandpass filter, the same evaluation can be performed by inputting two signal waves and an interference wave from the input terminal.

  The electronic component of the present invention does not change the size of the electronic component having the conventional structure, and can improve the electrical characteristics without impairing the same small electronic component as the conventional one. Further, it is possible to obtain an electronic component that is inexpensive and excellent in electrical characteristics without adding a complicated process.

  Further, as shown in FIG. 7, the same effect can be obtained even when the magnetic layer 140 is formed on a part of the side wall of the via hole 111 formed in the substrate 110. In this case, it is preferable to form a magnetic layer at least in a ring shape on the side wall of the via hole. A part of the external terminal 112 may be a magnetic layer. The via hole in which the magnetic layer is formed on the side wall is filled with a conductive material such as silver or copper, and by connecting the wiring pattern of the functional part to the external terminal, the conductor loss is small and the distortion characteristics Thus, it is possible to obtain an electronic component having excellent high frequency characteristics. The same effect can be obtained even when the entire via hole 111 is filled with the conductive magnetic material 140 (FIG. 8).

  Further, as shown in FIG. 9, similarly to the structure of the conventional electronic component (FIG. 11), a via hole 111 may be provided in the lid 130 to connect to the external terminal 112. In this case, the magnetic layer 140 is preferably disposed on the back surface of the substrate, but the magnetic layer may be formed in a portion where the external terminal is not formed in the lid. When an insulating magnetic layer is formed between external terminals, to provide an electronic component that has excellent isolation between terminals, excellent out-of-band attenuation, and excellent high-frequency characteristics such as distortion characteristics Can do.

  In this embodiment, a thin film bulk acoustic wave resonator device is used as an electronic component, but the same effect can be obtained with other high-frequency filters such as a surface acoustic wave (SAW) device using an acoustic wave propagating on the surface of a piezoelectric body. It is done. In the present embodiment, the duplexer has been described. However, the same effect can be obtained with a single filter.

  Further, as shown in FIG. 10, the same effect can be obtained in a mechanical switch such as a MEMS (Micro Electro-Mechanical System) used in a similar wireless circuit. In FIG. 10, 501 is a transmission terminal, 502 is a reception terminal, 503 is a baseband (BB) unit, 504 is a power amplifier (PA), 505 is a transmission filter, 506 is a reception filter, 508 is a low noise amplifier (LNA), 509 Is an antenna, 511 is a high-frequency switch for switching between transmission and reception.

  At the time of transmission, the signal input from the transmission terminal 501 is modulated by the baseband unit 503, and the signal is amplified by the power amplifier 504. Then, the signal is filtered through the transmission filter 505, and a signal in the transmission band is transmitted from the antenna 509. At the time of reception, a signal received from the antenna 509 is filtered through the reception filter 506 without going around the transmission filter, amplified by the LNA 508, demodulated by the baseband 503, and transmitted to the reception terminal 502. As described above, the switch is used when transmission and reception are performed in a time division manner, and a mechanical switch using the MEMS technology can be used.

  Even in such a system, as in the case of the duplexer, a mechanical switch is formed on the silicon substrate, and the magnetic layer is arranged on the structure, so that there are various kinds of cases compared to the case without the magnetic layer. An improvement effect of 20 to 50 dBm was obtained with respect to the interference wave.

  As described above, a functional element including a substrate and a functional unit formed on at least one main surface of the substrate, a lid unit disposed on one main surface side of the substrate on which the functional unit is formed, Since at least one of the substrate or the lid is provided with a wiring electrode for electrical connection with the outside, and at least one of the substrate or the lid is provided with a magnetic material layer, intermodulation distortion is reduced. An electronic component having excellent high frequency characteristics can be obtained.

  A functional element comprising a substrate and a functional portion formed on at least one main surface of the substrate; a lid disposed on one main surface side of the substrate on which the functional portion is formed; and the substrate or At least one of the lids is provided with a wiring electrode for electrical connection with the outside, and the wiring electrode includes a via hole formed in the substrate or the lid, and at least one of the side walls of the via hole. An electronic component having a magnetic material layer in a part, or a functional element comprising a substrate and a functional part formed on at least one principal surface of the substrate, and one principal surface side of the substrate on which the functional part is formed And at least one of the substrate or the lid portion and a wiring electrode for electrical connection with the outside, and the wiring electrode is a via formed in the substrate or the lid portion. Comprises Lumpur, the via holes by the electronic component that has been filled with magnetic material, passage loss is small, it is possible to obtain an electronic component having excellent frequency characteristics such as a distortion characteristic.

  Further, when the magnetic material is a conductive material, a magnetic layer can be formed without causing a short circuit between wiring patterns by covering the magnetic material with an insulating material. Since there is no deterioration in magnetic characteristics, it is possible to obtain a highly reliable electronic component that does not change with time.

  In addition, when the filler is an organic material supporting a magnetic metal such as iron (Fe), a general sealing material is used when a plurality of electronic components are mounted on a circuit board and resin-sealed in a lump. It is possible to obtain an electronic component having a high affinity with a resin such as an epoxy-based resin, which is a general base material, and excellent in long-term reliability.

  Furthermore, in order to obtain the electronic component, a step of forming a functional portion on the substrate, a step of bonding the functional portion and the lid portion, and a step of forming a magnetic material layer on a part of the substrate or the lid portion; Or a step of forming a functional part on the substrate, a step of bonding the functional part and the lid, a step of forming a via hole in the substrate or a part of the lid, and a side wall of the via hole Forming a magnetic material layer on at least a part of the substrate, forming a functional part on the substrate, joining the functional part and the lid, and a part of the substrate or the lid By providing at least a step of forming a via hole and a step of filling the via hole with a magnetic material, it is possible to provide a method of manufacturing an electronic component having excellent high frequency characteristics and reliability.

  Further, a communication device including an antenna, a transmission circuit and a reception circuit, wherein the electronic parts such as a bandpass filter, a duplexer, and a switch are connected to the antenna and the transmission circuit or the reception circuit, or By providing at least one of the transmission circuit and the reception circuit, a communication device having good intermodulation distortion characteristics and excellent call quality can be obtained.

  The electronic component according to the present invention can be realized inexpensively by a simplified process without affecting the small and low profile, and has excellent high frequency characteristics such as intermodulation distortion, out-of-band attenuation, and isolation. Furthermore, it is possible to provide an electronic component with excellent reliability.

  By using the electronic components, it is possible to realize a low-loss and small piezoelectric vibration device and functional devices such as a filter, a duplexer, an actuator, and a mechanical switch. A wireless communication device that is strong and excellent in call quality can be provided.

Sectional schematic diagram which shows the structure of the electronic component in Embodiment 1 of this invention The block diagram which shows the structure of the filter in Embodiment 1 of this invention. Sectional schematic diagram which shows the structure of the duplexer in Embodiment 1 of this invention. The block diagram which shows the structure of the duplexer in Embodiment 1 of this invention. The block diagram of the communication apparatus in Embodiment 1 of this invention The block diagram which shows the measurement system in Embodiment 1 of this invention The block diagram of the communication apparatus in Embodiment 1 of this invention Sectional schematic diagram which shows the structure of the other electronic component in Embodiment 1 of this invention Sectional schematic diagram which shows the structure of the other electronic component in Embodiment 1 of this invention Sectional schematic diagram which shows the structure of the other electronic component in Embodiment 1 of this invention Cross-sectional schematic diagram showing the structure of a conventional electronic component Cross-sectional schematic diagram showing the structure of another conventional electronic component

Explanation of symbols

DESCRIPTION OF SYMBOLS 110 Board | substrate 111 Via hole 112 External terminal 113 Cavity 120 Functional element 121 Piezoelectric layer 122 Upper electrode 123 Lower electrode 130 Cover part 131 Cavity 140 Magnetic body layer 201a Input terminal 201b Output terminal 202, 202a, 202b, 202c Series resonator 203a, 203b Parallel resonator 204 Bypass resonator 205 Inductor 301 Transmission terminal 302 Reception terminal 303 Antenna terminal 304 Transmission filter 305 Phase shift circuit 306 Reception filter 307 Duplexer 401 Signal generator 402 Power amplifier 405 Transmission filter 406 Reception filter 407 Duplexer 409 Spectrum analyzer 411 Signal generator 501 Transmission terminal 502 Reception terminal 503 Baseband unit 504 Power amplifier 505 Transmission filter 506 Reception filter 507 Duplexer 508 LNA
509 Antenna 510 Communication device 511 Switch 610 First substrate 611 Cavity 620 Function unit 621 Piezoelectric layer 622 Upper electrode 623 Lower electrode 630 Lid 631 External terminal 632 Via hole 633 Cavity 640 Second substrate 710 Base substrate 712 External terminal 714 Bonding member 715 Conductive member 721 Electrode 723 Electrode 722 Insulating member 730 Surface acoustic wave resonator

Claims (13)

A substrate,
A functional element comprising a functional part formed on at least one main surface of the substrate;
A lid portion disposed on one main surface side of the substrate on which the functional portion is formed;
Provided with at least one of the substrate and the lid part, a wiring electrode for electrical connection with the outside,
An electronic component comprising a magnetic material layer on at least one of the substrate and the lid. A substrate,
A functional element comprising a functional part formed on at least one main surface of the substrate;
A lid portion disposed on one main surface side of the substrate on which the functional portion is formed;
Provided with at least one of the substrate and the lid part, a wiring electrode for electrical connection with the outside,
An electronic component, wherein the wiring electrode includes a via hole formed in the substrate or the lid portion, and a magnetic material layer is provided on at least a part of a side wall portion of the via hole. A substrate,
A functional element comprising a functional part formed on at least one main surface of the substrate;
A lid portion disposed on one main surface side of the substrate on which the functional portion is formed;
At least one of the substrate or the lid portion is provided with a wiring electrode for electrical connection with the outside, the wiring electrode includes a via hole formed in the substrate or the lid portion, and the via hole is a magnetic material An electronic component filled with The electronic component according to claim 3, wherein the magnetic material is a conductive material. 4. The electron according to claim 1, wherein the magnetic material includes at least an element selected from nickel (Ni), iron (Fe), chromium (Cr), cobalt (Co), and manganese (Mn). parts. The electronic component according to any one of claims 1 to 3, wherein the filler is a magnetic material coated with an insulating material. The electronic component according to claim 1, wherein the filler is an organic material carrying a magnetic material. The electronic component according to claim 1, wherein the functional element is a passive component. The electronic component according to claim 1, wherein the functional element is a filter or a mechanical switch using elastic vibration. Forming a functional part on the substrate;
Joining the functional part and the lid part;
And a step of forming a magnetic material layer on a part of the substrate or the lid. Forming a functional part on the substrate;
Joining the functional part and the lid part;
Forming a via hole in a part of the substrate or the lid;
And a step of forming a magnetic material layer on at least a part of the side wall of the via hole. Forming a functional part on the substrate;
Joining the functional part and the lid part;
Forming a via hole in a part of the substrate or the lid;
A method of manufacturing an electronic component comprising at least a step of filling the via hole with a magnetic material. A communication device including an antenna, a transmission circuit, and a reception circuit,
A communication device comprising the electronic component according to any one of claims 1 to 3 at a connection portion between the antenna and the transmission circuit or the reception circuit, or at least one of the transmission circuit and the reception circuit.

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