JP2007227715A - Manufacturing method for patterning substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a patterning substrate manufacturing method of forming a resist pattern using an ordinary resist material but without using a photomask to carry out patterning. <P>SOLUTION: On substrates 10 and 11 whose surfaces are to be processed into a desired pattern, a thin film 12 is formed into a given shape with a surface energy different from that of the surface of the substrates 10 and 11. The entire surface of the substrates 10 and 11 is coated with a resin material to form a resin material film 13 on a part where the thin film 12 is not formed. The substrates 10 and 11 are etched using the resin material film 13 as a mask, and then the resin material film 13 is eliminated. In this process, the substrates 10 and 11 can be shaped into a given pattern by only coating the substrates 10 and 11 with the resin material, which enables patterning by etching with the resin material as a mask. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a substrate on which a desired pattern is formed, and more particularly, to a method of forming a resist pattern without using a photomask and performing patterning.

Conventionally, patterning of a transparent conductive film such as ITO (Indium Tin Oxide) or a metal material film has been performed using a general photolithography technique described below.
(1) A photoresist material is formed to a thickness of 1 to 25 microns by a roll coater, a spinner or the like on a substrate on which a layer of a desired material such as ITO or a metal material is formed on the entire surface.
(2) Pre-bake the resist coating with an oven, hot plate, far-infrared furnace, etc. to evaporate the solvent of the resist coating.
(3) The resist is exposed to a desired pattern through a photomask with an exposure machine.
(4) The resist is developed by dipping the substrate into the developer or showering the developer.
(5) Perform post-baking of the resist using an oven or hot plate, or perform UV cure by irradiating UV light.
(6) Etching the ITO or metal material layer on the surface of the substrate by dipping the substrate into the etchant or showering the etchant.
(7) The resist is removed by dipping the substrate into the remover or showering the remover. As a result, a substrate having a desired pattern of ITO or a metal material layer can be manufactured.

In recent years, Patent Documents 1 and 2 disclose methods for forming a desired resist pattern by directly applying a resist material in a pattern shape using a high-precision printing technique such as inkjet. Patent Document 3 describes a method of forming a conductor layer having a desired pattern by applying an adhesive flux in a desired pattern using an ink jet technique and attaching conductive particles to the flux. Yes. Patent Document 4 describes a method of forming a conductive metal in a pattern in which a plating catalyst is ejected by ejecting an ink containing an electroless plating catalyst into a desired pattern by inkjet technology and then performing electroless plating. ing.
Japanese Patent Laid-Open No. 11-340129 JP 2000-34028A JP 2000-349416 A JP 2000-311527 A

  In the conventional photolithography technique, it is necessary to produce a photomask for each pattern to be formed. However, photomasks are expensive and are often ordered by photomask manufacturers, and there is a problem that it takes time from design to completion. Further, every time the pattern to be manufactured is changed, an operation of exchanging the photomask of the exposure machine is necessary, which leads to a decrease in manufacturing efficiency. Photomasks that are not used need to be stored so as not to be damaged, a storage space is required, and management costs are also increased.

  On the other hand, a method of forming a resist having a desired pattern by discharging a resist material by an inkjet technique as in Patent Documents 1 and 2 requires a resist material that can be discharged by inkjet. Resist materials must achieve various performances that require high resist reliability, such as high etching resistance and removeability, and develop new resist materials in order to be able to be ejected by inkjet. There is a need. Also, as described in Patent Document 3, it is difficult to form an electrode having excellent conductivity by the method of attaching conductive particles. According to the method using electroless plating as in Patent Document 4, it is difficult to form a transparent electrode having excellent transparency.

  An object of the present invention is to provide a patterning substrate manufacturing method in which a resist pattern is formed using a normal resist material without using a photomask, and patterning is performed.

  In order to achieve the above object, according to the first aspect of the present invention, the following manufacturing method is provided. That is, a thin film having a surface energy different from the surface of the substrate is formed in a predetermined shape on the substrate, and a resin material is applied to the entire surface of the substrate, thereby forming a resin material film on a portion where the thin film is not formed. Then, using the resin material film as a mask, after etching the substrate, the resin material film is removed, and this is a patterning substrate manufacturing method. Thereby, since it can form in a predetermined pattern only by apply | coating resin material, it can pattern by etching using this as a mask.

  According to the second aspect of the present invention, a thin film having a surface energy different from the surface of the substrate is formed in a predetermined shape on the substrate, and a resin material is applied to the entire surface of the substrate to form a thin film. The material film to be patterned is formed on the entire surface of the substrate, and the material film to be patterned is removed by removing the resin material film. A method of manufacturing a patterning substrate is provided which leaves a material film to be patterned on the thin film. Thereby, since it can form in a predetermined pattern only by apply | coating a resin material, a desired material film | membrane can be patterned by the lift-off method.

  As the above-described thin film, a film having a surface energy smaller than that on the substrate can be used. As a result, the resin material is repelled by the thin film, and no resin film is formed on that portion. For example, the surface energy of the thin film is desirably 39 dyn / cm or less. A thin film having a surface contact angle with water of 40 degrees or more (more desirably 90 degrees or more) and 150 degrees or less can be used.

  The thin film can be formed by printing. For example, printing can be performed by an inkjet method.

  A film formed of a material to be patterned can be provided on the surface of the substrate, and the above-described thin film can be formed on this film. Thereby, the film on the substrate can be patterned.

  According to the third aspect of the present invention, a thin film having a surface repelling a predetermined resin material is formed in a predetermined shape on a substrate whose surface is to be processed into a desired pattern, and the predetermined resin is formed on the entire surface of the substrate. By applying a material, a method of manufacturing a patterning substrate is provided in which a resin material film is formed in a portion where a thin film is not formed, the substrate is etched using the resin material film as a mask, and then the resin material film is removed. . Thus, by utilizing the fact that the resin material film is repelled by a thin film, it can be formed into a desired pattern and used as an etching mask.

  According to the fourth aspect of the present invention, a thin film having a surface repelling a predetermined resin material is formed in a predetermined shape on the substrate, and the predetermined resin material is applied to the entire surface of the substrate to form the thin film. The resin material film is formed on the part that is not formed, the film of the material to be patterned is formed on the entire surface of the substrate, and the material film to be patterned on the resin material film is removed by removing the resin material film. A method of manufacturing a patterning substrate is provided which leaves a material film to be patterned on the thin film. Thus, the resin material film can be formed into a desired pattern by utilizing the fact that the resin material film is repelled by the thin film, and can be patterned by the lift-off method.

An embodiment of the present invention will be described with reference to the drawings.
In the present invention, a material that can be ejected by ink jet and has a property of repelling a resist material, for example, a water repellent material, is applied onto a substrate or a substrate on which a film of ITO or a metal material to be patterned is formed. Application is performed using an apparatus, and a general photoresist material is coated on the entire surface. According to this method, the resist film is not formed on the portion where the material having the property of repelling the resist material is applied, and the portion without the resist is formed depending on the presence or absence of the material repelling the resist material. A desired pattern can be produced. By using this resist pattern as an etching mask and etching a desired film such as ITO on the substrate, a film such as ITO can be patterned. As a result, it is possible to form a resist pattern using an ordinary resist material without using a photomask, and perform patterning.

  When patterning a substrate or film under the resist using the resist pattern as an etching mask, a material that repels the resist material is applied to a region opposite to the desired pattern (a portion to be removed by etching). Further, a desired film such as a metal film can be formed on the resist pattern, and the desired pattern can be formed into a pattern shape by lifting off the resist pattern. In the case of this lift-off method, a resist repelling material is applied to a desired pattern such as a metal film.

(First embodiment)
As a first embodiment, a manufacturing method of patterning by etching using a resist pattern formed depending on whether or not a resist material is applied will be described with reference to FIG.

  First, a material capable of forming a surface state that repels a resist material is prepared. The phenomenon that the resist is repelled on the surface of the predetermined region is caused by the surface energy of the region being smaller than the surface energy of the surrounding area (substrate or film). Therefore, a material that can form a surface having a surface energy smaller than the surface to which the resist is applied, such as a water repellent material, can be used. Specifically, a material capable of forming a surface with a surface energy of 39 dyn / cm or less is desirable. In addition, when the material is a thin film, the contact angle with water is desirably 40 ° or more and 150 ° or less, and more desirably 90 ° or more and 150 ° or less in view of ease of pattern shape. .

  For example, silicone acrylic block copolymer, which is a water repellent material, vertical alignment film material for liquid crystal display devices (polyamide (polyimide after thermal firing)), silane-based vertical alignment film material (DMOAP: n-n'-dimethyl-n) -octadecyl-3-aminopropyltrimethoxysilylchloride) and various oils can be used. Various oils that solidify at room temperature and liquefy when heated can be used.

  These resist-repelling materials are adjusted in viscosity by mixing a viscosity adjusting agent, etc., so that the viscosity can be discharged by an ink jet apparatus. Since the viscosity that can be ejected by the ink jet apparatus varies depending on the structure of the ink jet head, it is obtained in advance by experiments or the like. For example, the adjustment is made to be about 5 to 15 CP. When oil is used as a resist repelling material, the viscosity is adjusted by the heating temperature.

  When a silicone acrylic block copolymer is used as the resist-repelling material, a solvent such as isopropyl alcohol (IPA) can be used as a viscosity modifier. When polyamide is used, γ-butyllactone (γ-BL) can be used as a viscosity modifier. As the viscosity modifier, a suitable solvent, solution, or the like is appropriately selected and used in accordance with the properties of the material that repels the resist. At this time, in consideration of the material of the head portion of the ink jet apparatus, a solvent or solution that does not dissolve or corrode the head portion is selected.

  In this embodiment, by using a water-repellent material that repels resist, a solvent that does not corrode the head portion of the inkjet apparatus can be selected and used as a viscosity modifier. For this reason, without affecting the inkjet head having a fine structure capable of precise ejection, ejection can be performed stably over a long period under precise ejection conditions, and a precise pattern can be stably drawn. In general, an inkjet head having a smaller discharge amount tends to have a lower solvent resistance because a material that can realize the structure is limited. For this reason, when drawing a desired pattern by directly ejecting a normal resist material with an inkjet head, the organic solvent contained in the resist material tends to cause dissolution / corrosion in the welded portion of the head, and a precise pattern. It is difficult to stably draw for a long time. In this embodiment mode, drawing can be performed without causing such a corrosion problem by using a material that repels resist.

  Further, since the viscosity that can be ejected by the ink jet apparatus is low (for example, 5 to 15 CP), even if the liquid droplet is ejected precisely, it spreads on the substrate upon landing and precise drawing is difficult. Therefore, the contact angle is high, and a fine pattern can be drawn while maintaining the discharged shape as it is. For example, when a material having a contact angle of 90 ° is used, a drawing point (landing diameter) having substantially the same diameter as the discharged droplet diameter can be drawn on the substrate, and when a material having a contact angle of 90 ° or more is used, It is possible to draw a drawing point smaller than the discharged droplet diameter.

  A manufacturing process will be specifically described with reference to FIGS. As shown in FIG. 1A, a substrate 10 on which a film 11 to be patterned is formed is prepared. A material that repels the viscosity-adjusted resist is set in an ink jet apparatus, and on a film 11 in FIG. 1A under a predetermined discharge condition (discharge amount, drawing point density, feed rate), a predetermined region (for etching). The portion to be removed) is printed (drawn) in a shape (FIG. 1B). Thereafter, firing is performed under predetermined conditions. For example, when a vertical alignment film material for a liquid crystal display device or DMOAP is used as a resist repelling material, baking is performed at 180 ° C. for 1 hour, and when a silicone acrylic block copolymer is used, baking is performed at 100 ° C. for 1 hour. The film 12 of the material that repels the formed resist is transparent and very thin, and can exhibit the performance of repelling the resist even if the formation state cannot be observed visually or with an optical microscope.

  Next, a desired resist material is coated on the entire surface with a desired thickness on the substrate 10 of FIG. 1B to form a resist coating film. Thereafter, the resist coating film is pre-baked at a predetermined temperature and time to evaporate the solvent of the resist coating film, thereby forming a resist film 13 (FIG. 1C). Thereby, the resist film 13 can be formed in a region where the film 12 is not formed.

  As the coating method, a roll coater method and a die (slit) coating method are suitable. A spin coating method can also be used, but depending on the pattern shape of the material that repels the resist, radial defects (unevenness of resist thickness) may occur on the outside thereof.

  Although a general resist material can be used as the resist material, in this embodiment mode, exposure through a photomask is not performed, and thus there is no need to have photoreactivity. Therefore, a resin material other than a general photoreactive resin can be used as a resist material as long as it has high etching resistance and removeability.

  The pre-bake conditions (temperature and time) are set so that the solvent contained in the resist material evaporates. For example, heating is performed at 90 to 110 ° C. for 10 to 15 minutes. Pre-baking can be performed in a clean oven (hot air drying furnace) or a far-infrared furnace.

  When the surface of the substrate 10 in FIG. 1C after pre-baking was observed with an optical microscope, it was confirmed that the resist film 13 was not formed only in the portion where the film 12 was formed. In addition, when the inkjet head is moved linearly in the step of FIG. 1B to form the film 12 in a line shape, and the width of the portion where the resist film 13 is not formed in FIG. It was confirmed that the line width was almost equal to the diameter at the time of landing on the film 11 calculated from the amount of droplets ejected by the inkjet head. For example, when the amount of ejected droplets is 4 pl, the particle size in the air is 20 microns, but upon landing, it expands 2-3 times and becomes 40-60 microns. The width of the portion where the resist film 13 is not formed is approximately equal to that. Accordingly, the patterning accuracy (resolution) of the resist film 13 depends on the minimum ejection amount of the ink jet, and a high-definition pattern can be formed by using a high-definition head. Although the resolution (40 to 60 microns) obtained in this embodiment is somewhat insufficient to form a high-definition pattern such as a TFT, a simple character pattern display, a large television (plasma display (PDP), liquid crystal This value is sufficient for patterning for forming relatively large pixel patterns such as displays and field emission displays (FEDs), and for printed circuit boards.

  Next, the film 11 is etched by a desired etching method using the resist film 13 as an etching mask. Thereby, only the exposed region of the film 11 on which the resist film 13 is not formed is etched (FIG. 1D). Etching conditions can be set similarly to conventional photolithography. For example, a wet etching method for dipping in an etching solution or a dry etching method can be used.

  Finally, the resist film 13 of the substrate 10 in FIG. 1D is removed using a remove liquid (resist stripping liquid) (FIG. 1E). For example, a method of dipping the substrate 10 into a remove liquid or a method of spraying the remove liquid onto the resist film 13 of the substrate 10 can be used.

  In the substrate 10 of FIG. 1E manufactured by the above steps, the pattern of the resist film 13 is formed as it is as the pattern of the film 11, so that a patterning substrate can be manufactured.

(Second Embodiment)
As a second embodiment, a manufacturing method for forming a pattern by lift-off using a resist pattern formed depending on whether or not a resist material is applied will be described with reference to FIG.

  First, a material that repels the resist material is prepared, and the viscosity is adjusted to a viscosity that can be discharged by an inkjet apparatus. As the material that repels the resist, the same material as in the first embodiment can be used. On the other hand, a substrate 10 is prepared, and a material that repels resist is printed in a desired pattern by an ink jet apparatus as in the first embodiment, and then fired under predetermined conditions to form a film 12 (FIG. 2). (A)). Since the formed film is transparent and very thin, the formation state cannot be observed visually and with an optical microscope, but it can exhibit a property of repelling a resist material.

  Next, a resist material is coated on the entire surface of the substrate 10 in FIG. 2A with a desired thickness to form a resist coating film, and then pre-baked under predetermined conditions to form a resist film 13 ( FIG. 2 (b)). Thereby, the resist film 13 can be formed in a region where the film 12 is not formed. As the coating method, the roll coater method and the die (slit) coating method are suitable as in the first embodiment. Although spin coating may be used, depending on the pattern shape of the material that repels the resist, defects (unevenness of resist thickness) may occur radially outside the resist.

  As the resist material, a general resist material can be used as in the first embodiment, and it is not necessary to have photoreactivity, but when a resist material having photoreactivity (positive type) is used. In order to improve releasability, light (ultraviolet rays) can be irradiated in the step of FIG.

  A desired film 15 to be patterned is formed on the entire surface of the substrate 10 with the resist film 13 shown in FIG. 2B by a desired film forming method (FIG. 2C). For example, when the film 15 is a metal material film, a sputtering method, a vacuum evaporation method, various CVD methods, or the like can be used as the film formation method. In addition to a metal material, a semiconductor material, an insulating material, or the like can be formed.

  When a positive resist is used as described above, light irradiation is performed as necessary (FIG. 2D). When the film 15 is a metal film, the entire surface can be irradiated from the back surface (the substrate 10 side).

  Finally, the resist film 13 is removed with a remover (resist stripper). For example, it is possible to dip in the remove liquid or to spray the remove liquid in a spray form. By this step, the film 15 on the resist film 13 is removed together with the resist film 13, and the film 15 of the portion where the resist film 13 is not formed (that is, the portion of the material film 13 that repels the resist) remains. Can be patterned (so-called lift-off) (FIG. 2E).

  The substrate 10 on which the film 15 having a desired pattern is formed can be obtained from the steps of FIGS. The manufacturing method of the second embodiment is particularly effective for patterning a material that is difficult to etch.

  In the first and second embodiments, the case where an inkjet apparatus is used to form the film 12 of a material that repels resist has been described. However, various printing apparatuses such as dispensers and screen printing are used for rough patterns. It is also possible to use it.

  The films 13 and 15 to be patterned are not limited to a single layer, but are effective when a plurality of materials are laminated.

  In the first embodiment, the example in which the film 11 on the substrate 10 is patterned by etching has been described. However, the film 11 is not provided, and the surface of the substrate 10 can be directly etched and processed into a desired pattern. It is.

  Unlike the conventional photolithography techniques, the manufacturing methods of the first and second embodiments do not require a photomask. Therefore, the manufacturing cost of the photomask is not required, and the pattern substrate can be prototyped and manufactured immediately after the pattern design without waiting for the manufacturing of the photomask. There is also an advantage that even if there is a design mistake, it can be corrected immediately without producing a new photomask.

  Further, even if the pattern to be manufactured changes, it is only necessary to change the pattern shape data set in the ink jet apparatus, so that a so-called setup change time for replacing the photomask with the exposure apparatus is unnecessary. In addition, exposure and development of the resist film become unnecessary, and the process is shortened. An expensive exposure apparatus is unnecessary, and initial introduction costs and running costs can be reduced. In addition, since a developing solution for the resist film is unnecessary, no waste liquid treatment is required.

  Furthermore, a space for storing the photomask is not required, and exposure is not performed. Therefore, photoreaction performance is unnecessary, and an inexpensive resin material can be used as the resist material. The consumption of the resist can be slightly reduced.

  Further, by using the manufacturing method of the second embodiment, patterning of a material that is difficult to etch can be performed by lift-off.

  In addition, since the manufacturing method of the first and second embodiments is not a method of discharging a resist material by inkjet technology as in the conventional patent documents 1 and 2, a special resist material that can be discharged by inkjet is developed. The resist film can be easily formed into a desired pattern by utilizing the fact that the resist material is repelled by a water repellent material or the like. Further, since the film 11 and the film 15 to be patterned can be formed by a conventional film formation method, they can be formed by an optimum film formation method. Therefore, a patterned substrate having excellent characteristics such as an electrode film having excellent conductivity and a transparent electrode having excellent transparency can be produced.

  For example, substrates with electrodes for various display elements can be manufactured by the manufacturing methods of the first and second embodiments. Specifically, a substrate with an electrode having a relatively large pixel pattern, such as a character pattern display device, a large television device (PDP, liquid crystal, FED), or a display device for electronic paper, can be formed. Moreover, it is possible to manufacture wiring patterns, such as a printed circuit board, electrode patterns, such as a touch panel.

Example 1
As a first example, the first embodiment was implemented under the following conditions.
As a water repellent material that repels the resist material, RIPELL COAT 130 (manufactured by Nippon Paint), which is a silicone acrylic block copolymer, was used. This material has a contact angle with water of 105 ° when applied on a glass substrate and does not have a particularly high water repellency. As a viscosity modifier, isopropyl alcohol (IPA) was used, and the viscosity was adjusted to 9.0 CP. This material was set in an inkjet device. A high-definition head made by Konica Minolta was used as the inkjet head (minimum discharge amount: 4 pl). The discharge conditions were 360 dpi and a feed rate of 300 mm / sec.

  On the other hand, as a substrate 10 in FIG. 1A, a blue plate glass substrate having a thickness of 0.7 mm was prepared, and an ITO film 11 having a thickness of 2000 angstroms was formed in advance. On this ITO film | membrane 11, the said water-repellent material was printed in the shape of a line with the inkjet apparatus, and the silicone acrylic block copolymer film | membrane 12 was formed by baking for 15 minutes at 100 degreeC (FIG.1 (b)). ). Since the film 12 was transparent and very thin, the formation state could not be observed visually and with an optical microscope.

  Next, PMER-P-7130MA manufactured by Tokyo Ohka Kogyo Co., Ltd. was used as a resist material, and the entire surface was coated on the substrate of FIG. Thereafter, pre-baking was performed at 110 ° C. for 15 minutes in a clean oven (hot air drying furnace) to form a resist film 13 (FIG. 1C). FIG. 3 shows the surface of the ITO-coated substrate 10 on which the resist film 13 is formed as shown in FIG. It can be seen that the resist film 13 is not formed only in the portion where the water repellent material is formed in a line shape. Here, the width of the portion where the resist film 13 was not formed was measured to be 56.5 microns. The particle size in the air calculated from the 4 pl droplets ejected by the inkjet head is 20 microns, but when landed, it expands 2-3 times, so the particle size at the time of landing and the line where the resist film 13 is not formed. It was confirmed that the widths of these were almost equal.

  Next, the ITO film 11 was etched by using the resist film 13 as an etching mask by the process of FIG. The etchant was a mixture of hydrochloric acid and nitric acid heated to 45 ° C., and a dipping method was used. The etching rate was 800 Å / min and the time was 180 seconds. As a result, only the ITO film 11 on which the resist film 13 was not formed was etched. Further, cupric chloride or ferric chloride solution may be used as an etching solution.

  Finally, the resist film 13 was removed by the process shown in FIG. The removal was performed by dipping for 120 seconds in a solution of 3-5% NaOH aqueous solution heated to 40 ° C. When using the spray method instead of the dipping method, the spray pressure is set to 0.1 to 0.2 MPa.

  FIG. 4 shows a photograph of the surface of the glass substrate 10 on which the ITO film 11 thus prepared is patterned with an optical microscope. It was confirmed that the pattern of the resist film 13 formed in FIG. 3 was formed as it was as the pattern of the ITO film 11, and a substrate provided with the patterned ITO film was manufactured.

  In the first embodiment, a case where a resist repellent material having high water repellency is used will be described.

  As the water-repellent material, the same silicone acrylic block copolymer as in Example 1 was used, but Ripper Coat 410 (manufactured by Nippon Paint) showing super water-repellency was used. This material has a contact angle with water of 155 ° when applied on a glass substrate.

  Except for this, a glass substrate 10 on which the ITO film 11 was patterned under the same conditions as in Example 1 was produced. FIG. 5 shows a state when the surface of the prepared substrate 10 is observed with an optical microscope. Although the line width of the film 12 that repels the resist material is the same as that of the first embodiment, the ITO film 11 is widely removed (100 microns or more) and the shape is also undulated.

  It is considered that this phenomenon is mainly caused when the resist material is repelled in a wide range because the water repellency of the film 12 is too strong when the resist material is applied by a roll coater. Therefore, the contact angle of the water repellent material is preferably less than 155 °, desirably 40 ° or more and 150 ° or less. The surface energy of the film 12 is desirably 39 dyn / cm.

(Example 2)
As a second example, the second embodiment was performed under the following conditions.
As a water-repellent material that repels the resist material, a vertical alignment film material for a liquid crystal display device (polyamide, polyimide by thermal firing) was used (surface energy 31 dyn / cm). This material was mixed with γ-ptyllactone (γ-BL) to adjust the viscosity, and the viscosity was adjusted to 9.2 CP. This material was set in an inkjet device. A high-definition head made by Konica Minolta was used as the inkjet head (minimum discharge amount: 4 pl). The discharge conditions were 360 dpi and a feed rate of 300 mm / sec.

  On the other hand, a blue plate glass substrate having a thickness of 0.7 mm was prepared as the substrate 10 in FIG. The polyamide was formed in a line shape on this, and baked at 180 ° C. for 60 minutes to form a polyimide film 12. Since the formed film was transparent and very thin, the formation state could not be observed visually and with an optical microscope. When the film thickness was measured with a surface level meter, it was 50 angstroms or less and was a very thin film.

  Next, OFPR-800 manufactured by Tokyo Ohka Co., Ltd. was used as a resist material, and the entire surface of the substrate 10 in FIG. Thereafter, pre-baking was performed at 110 ° C. for 15 minutes in a clean oven (hot air drying furnace) to form a resist film 13 (FIG. 2B).

On top of this, a molybdenum film 15 having a thickness of 1000 angstroms was formed by sputtering (FIG. 2C). Thereafter, as shown in FIG. 2D, the entire surface was irradiated with ultraviolet rays from the back surface (glass substrate 10 side) (120 mJ / cm ² ). Since the resist film 13 was a positive resist, this light irradiation was performed in order to improve the peelability.

  Finally, the substrate 10 in FIG. 2D was dipped in a remove liquid (resist stripping solution), and the resist film 13 was stripped (removed) (FIG. 2E). The remove liquid used was a 3-5% NaOH aqueous solution heated to 40 ° C. and dipped for 120 seconds. Thereafter, a pure water shower was performed to wash away the resist film 13, the molybdenum film 15 on the resist film 13, and the remove liquid. When using the spray method which sprays a spray-like remove liquid instead of dipping, it sets to spray pressure: 0.1-0.2MPa.

  2A to 2E, the molybdenum film 15 in the region where the resist film 13 is formed is removed, and a portion where the resist film 13 is not formed (that is, the water repellent material film 12 is formed). The molybdenum pattern was left (so-called lift-off process). Thereby, the board | substrate 10 provided with the molybdenum film | membrane 15 processed into the desired pattern was able to be obtained.

  Moreover, in Example 2, in order to confirm the magnitude | size of the surface energy of the polyimide film 12 formed at the process of Fig.2 (a), the vertical alignment film of the liquid crystal element was formed on the same conditions, and the liquid crystal element was manufactured. . As a result, liquid crystal molecules could be aligned vertically. It is confirmed that the liquid crystal molecules are vertically aligned generally at 39 dyn / cm or less, and thus the polyimide film 12 formed in Example 2 has a surface energy of 39 dyn / cm or less.

(A)-(e) It is explanatory drawing which shows the manufacturing process of the patterning board | substrate of 1st Embodiment. (A)-(e) It is explanatory drawing which shows the manufacturing process of the patterning board | substrate of 2nd Embodiment. The photograph which image | photographed the surface of the board | substrate 10 with the resist film 13 produced at the process of FIG.1 (c) of a 1st Example with the optical microscope. The photograph which image | photographed the surface of the glass substrate 10 with which the ITO film | membrane 11 of FIG.1 (e) manufactured by the 1st Example was patterned with the optical microscope. The photograph which image | photographed the surface of the glass substrate 10 with which the ITO film | membrane 11 manufactured by the 1st Example was patterned with the optical microscope.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Substrate, 11 ... Film to be patterned, 12 ... Film of material that repels resist, 13 ... Resist film, 15 ... Film to be patterned

Claims (8)

A thin film having a surface energy different from the surface of the substrate is formed in a predetermined shape on the substrate,
By applying a resin material to the entire surface of the substrate, the resin material film is formed on a portion where the thin film is not formed,
A method of manufacturing a patterning substrate, comprising: etching the substrate using the resin material film as a mask, and then removing the resin material film. A thin film having a surface energy different from the surface of the substrate is formed in a predetermined shape on the substrate,
By applying a resin material to the entire surface of the substrate, the resin material film is formed on a portion where the thin film is not formed,
Forming a film of a material to be patterned on the entire surface of the substrate;
A method of manufacturing a patterning substrate, comprising: removing the resin material film to remove the material film to be patterned above the resin material film, and leaving the material film to be patterned above the thin film.   2. The patterning substrate manufacturing method according to claim 1, wherein the surface energy of the thin film is smaller than the surface energy on the substrate. 4. The method for manufacturing a patterning substrate according to claim 1, wherein the thin film has a surface contact angle with water of 40 degrees or more and 150 degrees or less. 5.
Law.   5. The patterning substrate manufacturing method according to claim 1, wherein the thin film is formed by an ink jet method. 6.   6. The patterning substrate manufacturing method according to claim 1, wherein a film formed of a material to be patterned is provided on a surface of the substrate, and the thin film is formed on the film. A method for producing a patterning substrate, comprising: A thin film having a surface repelling a predetermined resin material is formed in a predetermined shape on a substrate whose surface is to be processed into a desired pattern,
By applying the predetermined resin material on the entire surface of the substrate, the resin material film is formed on a portion where the thin film is not formed,
A method of manufacturing a patterning substrate, comprising: etching the substrate using the resin material film as a mask, and then removing the resin material film. On the substrate, a thin film having a surface that repels a predetermined resin material is formed in a predetermined shape,
By applying the predetermined resin material on the entire surface of the substrate, the resin material film is formed on a portion where the thin film is not formed,
Forming a film of a material to be patterned on the entire surface of the substrate;
A method of manufacturing a patterning substrate, comprising: removing the resin material film to remove the material film to be patterned above the resin material film, and leaving the material film to be patterned above the thin film.