JP2007212816A - Electrooptical device, method for manufacturing the same, and electronic appliance - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrooptical device such as a liquid crystal device which can perform a high quality display by improving transmittance while keeping moisture resistance. <P>SOLUTION: The electrooptical device is equipped with: a TFT array substrate 10 and a counter substrate 20 holding a liquid crystal layer 50; pixel electrodes 9a mounted on the TFT array substrate 10; and an alignment layer 16 formed on the pixel electrodes 9a and controlling an alignment state of the liquid crystal layer 50. Furthermore, the electrooptical device is equipped with: a sealing material 52 to stick the TFT array substrate 10 and the counter substrate 20 to each other on a seal region 52a along a perimeter of an image display region 10a with the pixel electrodes 9a mounted thereon; and an optical thin film 91 laminated between the TFT array substrate 10 and the pixel electrodes 9a at least on a region of the image display region 10a, from which the seal region 52a is excluded, on the TFT array substrate 10 and having a refractive index with a magnitude intermediate between those of the TFT array substrate 10 and the pixel electrodes 9a. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an electro-optical device such as a liquid crystal device and a manufacturing method thereof, and a technical field of an electronic apparatus such as a liquid crystal projector including the electro-optical device.

  In a liquid crystal device which is an example of this type of electro-optical device, two transparent substrates such as a glass substrate and a quartz substrate are bonded together with a sealing material, and liquid crystal is sealed between the substrates. Transparent pixel electrodes made of an ITO (Indium Tin Oxide) film are arranged in a matrix, for example, on one substrate, and a counter electrode made of an ITO film is provided on the other substrate to face the pixel electrode. A voltage based on an image signal is applied to the liquid crystal layer between the pixel electrode and the counter electrode to change the alignment state of the liquid crystal molecules, thereby changing the light transmittance for each pixel. In this way, image display is performed by changing the light passing through the liquid crystal layer according to the image signal.

  In such an image display, incident light passes through the pixel electrode and the counter electrode in addition to the liquid crystal layer. Therefore, it is desirable to increase the transmittance of the pixel electrode and the counter electrode in order to perform high-quality display. It is. For example, Patent Document 1 discloses a technique for improving the transmittance by laying an optical thin film made of, for example, a nitride film or the like directly under an ITO film constituting a pixel electrode and a counter electrode.

JP 2005-140836 A

  However, according to the technique disclosed in Patent Document 1, the moisture resistance of the device is reduced due to low interfacial adhesion between an optical thin film made of a nitride film or the like and an alignment film made of polyimide or the like. There is a technical problem.

  The present invention has been made in view of the above-described problems, for example. An electro-optical device capable of improving transmittance while maintaining moisture resistance and capable of high-quality display, a manufacturing method thereof, and the electro-optical device are disclosed. It is an object to provide an electronic device provided.

  In order to solve the above problems, a first electro-optical device according to the present invention includes a pair of first and second substrates that sandwich an electro-optical material, and a first transparent conductive film provided on the first substrate. In a seal region along the periphery of the display region provided with the pixel electrode, a first alignment film that is formed on the pixel electrode and that regulates the alignment state of the electro-optic material, The first substrate and the pixel in a region excluding a sealing material for bonding the first and second substrates to each other, at least the display region on the first substrate, and a partial region forming at least a part of the sealing region. And a first optical thin film having a refractive index intermediate between the refractive index of the first substrate and the refractive index of the pixel electrode.

  According to the first electro-optical device of the present invention, the pair of first and second substrates are alternately bonded to each other in the sealing region along the periphery of the display region by the sealing material, and the pair of first and second substrates. Between them, for example, liquid crystal as an electro-optical material is sandwiched. The first substrate has a laminated structure in which, for example, a transistor for switching pixels and wirings such as scanning lines and data lines are laminated on a glass substrate, for example, NSG (non-silicate glass) as the uppermost layer. Alternatively, an interlayer insulating film made of a silicon oxide film is formed. The second substrate is made of, for example, a glass substrate. On the first substrate, transparent pixel electrodes made of a first transparent conductive film such as an ITO film are arranged in a matrix, for example. On the second substrate, a counter electrode made of a conductive film such as an ITO film is arranged as a pixel electrode. Are provided opposite to each other. In a state where the electro-optical device is not operated, the surface shape effect in the first alignment film made of an organic material such as polyimide or an inorganic material such as silica (SiO 2) and the second alignment film provided on the counter electrode The optical material takes a predetermined orientation state between the pair of first and second substrates. During operation of the electro-optical device, a voltage based on an image signal is applied to the liquid crystal layer between the pixel electrode and the counter electrode, and the alignment state of the liquid crystal molecules changes. The change in the alignment state of the liquid crystal molecules changes the light transmittance for each pixel. As a result, the light passing through the liquid crystal layer changes according to the image signal, and an image is displayed in the display area.

  In the present invention, in particular, when viewed in plan on the first substrate, at least the display region on the first substrate has a refractive index that is intermediate between the refractive index of the first substrate and the refractive index of the pixel electrode. For example, a first optical thin film made of a silicon nitride film (SiN film), a silicon oxynitride film (SiON film), or the like is disposed between the first substrate and the pixel electrode, that is, between the layers in the stacked structure on the first substrate. Is done. That is, for example, an optical element having a refractive index in the range of 1.6 to 1.8 (that is, 1.6 to 1.8), adjacent to the first substrate having a refractive index of 1.4, for example. A thin film and a pixel electrode having a refractive index of 2.0, for example, are stacked in this order. Here, the “intermediate size” means that when the refractive index of the first substrate is larger than the refractive index of the pixel electrode, it is smaller than the refractive index of the first substrate and larger than the refractive index of the pixel electrode. Yes, when the refractive index of the first substrate is smaller than the refractive index of the pixel electrode, it means larger than the refractive index of the first substrate and smaller than the refractive index of the pixel electrode. It means value. That is, it is not intended to be limited to the intermediate value. Therefore, the optical thin film can increase the transmittance when incident light incident from the pixel electrode side passes through the pixel electrode and is emitted into the first substrate. That is, if no countermeasure is taken and the pixel electrode is provided adjacent to the first substrate, the pixel electrode and the pixel electrode are caused by a relatively large difference in refractive index between the first substrate and the pixel electrode. Interfacial reflection at the interface with the first substrate is relatively large. However, according to the present invention, the interface reflection can be reduced by the first optical thin film having an intermediate refractive index. Accordingly, it is possible to increase the transmittance when the light passes through the pixel electrode and is emitted into the first substrate. In order to enhance such an effect, the “at least display area” in which the first optical thin film is formed in this manner is preferably the entire display area, but not all the areas are formed. Depending on the situation, a corresponding effect can be obtained.

  Further, in the present invention, in particular, the first optical thin film is provided in a region excluding a partial region that forms at least a part of the seal region as viewed in plan on the first substrate. That is, the first optical thin film is not provided in a partial region that forms at least a part of the seal region. That is, the interface between the first alignment film and the first optical thin film is not formed in the partial region of the seal region. In other words, the interface between the first alignment film and the first substrate is formed in the partial region. Therefore, the adhesiveness at the interface between the first alignment film made of an organic material such as polyimide or the inorganic material such as silica and the first optical thin film made of, for example, a silicon nitride film or a silicon oxynitride film is low. Thus, it is possible to reduce or prevent moisture from penetrating into the display region from the outside through the interface between the first alignment film and the first optical thin film. In other words, by forming the interface between the first alignment film and the first substrate in the partial region of the seal region, the adhesion at the interface can be enhanced. Therefore, the moisture resistance of the apparatus can be improved.

  As described above, according to the first electro-optical device of the present invention, the first optical thin film is provided at least in the display region while maintaining the moisture resistance by not providing the first optical thin film in the partial region of the seal region. By providing this, the transmittance can be improved and high-quality display can be achieved.

  In one aspect of the first electro-optical device according to the present invention, the first optical thin film is provided in a region excluding at least the seal region.

  According to this aspect, since the first optical thin film is not formed at least in the seal region, it is possible to prevent moisture from penetrating from the interface between the first optical thin film and the first alignment film. That is, in the seal region, the interface between the first alignment film and the first substrate is formed without forming the interface between the first alignment film and the first optical thin film having low interface adhesion, thereby improving the adhesion at the interface. The moisture resistance of the device can be improved.

  In another aspect of the first electro-optical device according to the present invention, the first optical thin film is formed so as to surround the display region in the seal region as viewed in plan on the first substrate. A first portion.

  According to this aspect, since the first portion of the first optical thin film is continuously formed so as to surround the display region, for example, moisture can be prevented from entering the display region from the outside. it can. That is, the first portion functions as a partition wall that separates the display area from the outside, so that the moisture intrusion path can be blocked almost or completely. Therefore, the moisture resistance of the device can be further improved. Note that an interface between the first alignment film and the first substrate is formed in a partial region where the first optical thin film is not formed, that is, a region excluding a region where the first portion is formed in the seal region, and adhesion at the interface is improved. Has been enhanced.

  In another aspect of the first electro-optical device according to the invention, the first optical thin film is formed separately from each other in the seal region as viewed in plan on the first substrate. A plurality of second portions arranged so as to surround the display area;

  According to this aspect, the plurality of second portions are arranged as a plurality of columns shifted from each other in a direction intersecting with the direction from the inside of the seal region toward the display region so as to surround the display region, for example. Accordingly, the plurality of second portions function as partition walls separating the outside and the display area, and can be blocked by complicating or lengthening the moisture intrusion route. Therefore, the moisture resistance of the device can be further improved. Note that an interface between the first alignment film and the first substrate is formed in a partial region where the first optical thin film is not formed, that is, a region excluding a region where the second portion is formed in the seal region, and adhesion at the interface is improved. Has been enhanced.

  In another aspect of the first electro-optical device according to the invention, the pixel electrode includes a plurality of transistors disposed on a peripheral region located around the display region on the first substrate. A peripheral circuit for driving, wherein the first optical thin film is at least one first formed in a region at least partially including a region in which the plurality of transistors are formed as viewed in plan on the first substrate. It has 3 parts.

  According to this aspect, the third portion of the first optical thin film overlaps with the peripheral circuits such as the data line driving circuit and the scanning line driving circuit when viewed in plan on the first substrate, and the peripheral circuit Since it is provided on the upper layer side, it can be reduced or prevented that moisture from the outside enters the vicinity of the transistor in the peripheral circuit and adversely affects the operation of the transistor. That is, the moisture resistance of the peripheral circuit can be improved. The third portion of the first optical thin film is preferably formed so as to include all of the regions where the plurality of transistors included in the peripheral circuit are formed as viewed in plan on the first substrate. In this case, the moisture resistance of the peripheral circuit can be improved more reliably.

  In another aspect of the first electro-optical device according to the invention, the first alignment film is provided at least in a region excluding the seal region.

  According to this aspect, since the first alignment film is not formed at least in the seal region, it is possible to prevent moisture from penetrating from the interface between the first optical thin film and the first alignment film. That is, the moisture resistance of the apparatus can be improved by forming an interface between the sealing material and the first substrate in a partial region of the seal region and improving the adhesion at the interface.

  In another aspect of the first electro-optical device according to the invention, the first transparent conductive film is an ITO film.

  According to this aspect, by providing the first optical thin film between the pixel electrode made of the ITO film having a relatively low transmittance and the first substrate, the entire transmission of the first substrate, the first optical thin film, and the pixel electrode is achieved. The rate can be improved.

  In another aspect of the first electro-optical device according to the invention, the first optical thin film has a refractive index in a range of 1.6 to 1.8.

  According to this aspect, for example, a refractive index of 1.6 to 1.6 provided between a first substrate having a refractive index of about 1.4 and a pixel electrode made of ITO having a refractive index of about 2. Interface reflection can be effectively reduced by the first optical thin film within the range of 1.8 (that is, 1.6 to 1.8). Therefore, the transmittance can be effectively improved.

  In another aspect of the first electro-optical device according to the invention, the light absorption coefficient of the first optical thin film is smaller than the light absorption coefficient of the first transparent conductive film.

  According to this aspect, it is possible to reduce or prevent light loss when light passes through the first optical thin film, that is, decrease in light intensity, and to improve the transmittance more reliably.

  In another aspect of the first electro-optical device according to the invention, the first optical thin film includes at least one of an inorganic nitride film and an oxynitride film.

  According to this aspect, the first optical thin film includes at least one of a nitride film such as a silicon nitride film (SiN) and an oxynitride film such as a silicon oxynitride film (SiON). It is easy to make the refractive index intermediate between the refractive index of the pixel electrode and the refractive index of the first substrate. Therefore, the transmittance can be improved easily and reliably.

  In another aspect of the first electro-optical device according to the invention, the first alignment film is made of polyimide.

  According to this aspect, the first optical thin film including the first alignment film made of polyimide and the nitride film such as a silicon nitride film or the oxynitride film such as the silicon oxynitride film in the partial region of the seal region Therefore, the moisture resistance of the apparatus can be improved.

  In another aspect of the first electro-optical device according to the present invention, a counter electrode made of a second transparent conductive film provided on the second substrate, and an orientation of the electro-optical material formed on the counter electrode On the second substrate, between the second substrate and the counter electrode, in a region excluding the second alignment film that regulates the state and at least the display region and the partial region on the second substrate. And a second optical thin film having a refractive index intermediate between the refractive index of the second substrate and the refractive index of the counter electrode.

  According to this aspect, also in the partial region of the seal region on the second substrate, the interface between the second alignment film and the second substrate is formed as in the case of the partial region of the seal region on the first substrate described above. By doing so, the adhesiveness in an interface can be improved. Therefore, the moisture resistance of the apparatus can be improved. Accordingly, the transmittance can be improved by providing the second optical thin film at least in the display region while maintaining the moisture resistance by not providing the second optical thin film in the partial region of the seal region.

  In order to solve the above problems, a second electro-optical device according to the present invention includes a pair of first and second substrates that sandwich an electro-optical material, and a first transparent conductive film provided on the first substrate. A counter electrode made of a second transparent conductive film provided on the second substrate, an alignment film that is formed on the counter electrode and regulates an alignment state of the electro-optic material, and the pixel In a seal region along the periphery of the display region where the electrodes are provided, a sealing material for bonding the first and second substrates together, at least the display region on the second substrate, and at least one of the seal regions A refractive index having an intermediate size between the refractive index of the second substrate and the refractive index of the counter electrode, and is laminated between the second substrate and the counter electrode in a region excluding the partial region forming a part An optical thin film.

  According to the second electro-optical device according to the present invention, during the operation, image display is performed in the display area in substantially the same manner as in the case of the first electro-optical device according to the present invention described above.

  In the present invention, in particular, when viewed in plan on the second substrate, at least the display region on the second substrate has a refractive index that is intermediate between the refractive index of the second substrate and the refractive index of the counter electrode. For example, an optical thin film made of a silicon nitride film (SiN film), a silicon oxynitride film (SiON film), or the like is disposed between the second substrate and the counter electrode, that is, between the layers in the stacked structure on the second substrate. . That is, for example, an optical element having a refractive index in the range of 1.6 to 1.8 (that is, 1.6 to 1.8) adjacent to the second substrate having a refractive index of 1.4. A thin film and a counter electrode having a refractive index of 2.0, for example, are stacked in this order. Here, “intermediate size” means that when the refractive index of the second substrate is larger than the refractive index of the counter electrode, it is smaller than the refractive index of the second substrate and larger than the refractive index of the counter electrode. Yes, when the refractive index of the second substrate is smaller than the refractive index of the counter electrode, it means that it is larger than the refractive index of the second substrate and smaller than the refractive index of the counter electrode. It means value. That is, it is not intended to be limited to the intermediate value. Therefore, the optical thin film can increase the transmittance when incident light incident from the second substrate side passes through the counter electrode and is emitted into an electro-optical material such as liquid crystal. That is, if no counter measure is taken and the counter electrode is provided adjacent to the second substrate, the counter electrode and the counter electrode are caused by a relatively large difference in refractive index between the second substrate and the counter electrode. Interfacial reflection at the interface with the second substrate is relatively large. However, according to the present invention, interface reflection can be reduced by an optical thin film having an intermediate refractive index. Accordingly, it is possible to increase the transmittance when the light passes through the counter electrode and is emitted into the electro-optical material. The “at least display area” in which the optical thin film is formed in this manner is preferably the entire display area in order to enhance such an effect, but depending on the formed area, if not all. Appropriate effects can be obtained.

  Further, particularly in the present invention, the optical thin film is provided in a region excluding a partial region forming at least a part of the seal region as viewed in plan on the second substrate. That is, the optical thin film is not provided in a partial region that forms at least a part of the seal region. That is, the interface between the alignment film and the optical thin film is not formed in the partial region of the seal region. In other words, the interface between the alignment film and the second substrate is formed in the partial region. Therefore, due to the low adhesion at the interface between an alignment film made of an organic material such as polyimide or an inorganic material such as silica and an optical thin film made of a silicon nitride film, a silicon oxynitride film, etc. It is possible to reduce or prevent moisture from penetrating into the display region through the interface between the alignment film and the optical thin film. In other words, by forming the interface between the alignment film and the second substrate in the partial region of the seal region, the adhesion at the interface can be enhanced. Therefore, the moisture resistance of the apparatus can be improved.

  As described above, according to the second electro-optical device according to the present invention, by providing the optical thin film at least in the display region while maintaining the moisture resistance by not providing the optical thin film in the partial region of the seal region. The transmittance can be improved and high-quality display is possible.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described first or second electro-optical device according to the present invention.

  According to the electronic apparatus of the present invention, since it includes the first or second electro-optical device according to the present invention described above, a projection display device, a television, Various electronic devices such as a cellular phone, an electronic notebook, a word processor, a viewfinder type or a monitor direct-view type video tape recorder, a workstation, a video phone, a POS terminal, and a touch panel can be realized. In addition, as an electronic apparatus of the present invention, for example, an electrophoretic device such as electronic paper, an electron emission device (Field Emission Display and Conduction Electron-Emitter Display), and a display device using these electrophoretic device and electron emission device are realized. Is also possible.

  In order to solve the above problems, an electro-optical device manufacturing method according to the present invention includes a pair of first and second substrates that sandwich an electro-optical material, and a pixel electrode provided on the first substrate. An electro-optical device manufacturing method for manufacturing a device, wherein the refractive index of the first substrate and the refractive index of the pixel electrode are intermediate between the first substrate and the first substrate so as to be adjacent to the first substrate. An optical thin film forming step of forming an optical thin film having a refractive index of a size; and a transparent conductive film on the upper layer side adjacent to the optical thin film in the display region on the first substrate, A step of forming an alignment film that regulates an alignment state of the electro-optic material on the pixel electrode, and a sealing material in a seal region along the periphery of the display region, and the first and second layers Bonding the substrates to each other, and the optical Film forming step, forming the optical thin film on at least the display region of the first substrate, and the region excluding the partial region forming at least part of the seal area.

  According to the method for manufacturing an electro-optical device of the present invention, the first electro-optical device according to the present invention described above can be manufactured. In particular, in the optical thin film forming step, the transmittance can be improved by forming the optical thin film at least in the display region while maintaining the moisture resistance by not forming the optical thin film in the partial region of the seal region. Therefore, an electro-optical device capable of high quality display can be manufactured.

  The operation and other advantages of the present invention will become apparent from the best mode for carrying out the invention described below.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, a driving circuit built-in type TFT active matrix driving type liquid crystal device, which is an example of the electro-optical device of the present invention, is taken as an example.
<First Embodiment>
The liquid crystal device according to the first embodiment will be described with reference to FIGS.

  First, the overall configuration of the liquid crystal device according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing the configuration of the liquid crystal device according to this embodiment, and FIG. 2 is a cross-sectional view taken along the line H-H 'in FIG.

  1 and 2, in the liquid crystal device according to the present embodiment, a TFT array substrate 10 and a counter substrate 20 are arranged to face each other. The TFT array substrate 10 is an example of a “first substrate” according to the present invention, and the counter substrate 20 is an example of a “second substrate” according to the present invention. The TFT array substrate 10 is made of, for example, a quartz substrate, a glass substrate, or a silicon substrate, and the counter substrate 20 is made of, for example, a quartz substrate, a glass substrate, or the like. The TFT array substrate 10 and the counter substrate 20 are bonded to each other by a seal material 52 provided in a seal region 52a positioned around the image display region 10a as an example of the “display region” according to the present invention. The liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20 by the material 52 and the sealing material 109.

  In FIG. 1, a light-shielding frame light-shielding film 53 that defines the frame area of the image display region 10 a is provided on the counter substrate 20 side in parallel with the inside of the seal region 52 a where the sealing material 52 is disposed. In the peripheral region, the data line driving circuit 101 and the external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 in a region located outside the sealing region 52 a where the sealing material 52 is disposed. The sampling circuit 7 is provided so as to be covered with the frame light shielding film 53 on the inner side of the seal region along the one side. Further, the scanning line driving circuit 104 is provided so as to be covered with the frame light-shielding film 53 inside the seal region along two sides adjacent to the one side. On the TFT array substrate 10, vertical conduction terminals 106 for connecting the two substrates with the vertical conduction material 107 are arranged in regions facing the four corner portions of the counter substrate 20. Thus, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20.

  On the TFT array substrate 10, a lead wiring 90 is formed for electrically connecting the external circuit connection terminal 102 to the data line driving circuit 101, the scanning line driving circuit 104, the vertical conduction terminal 106, and the like. .

  In FIG. 2, on the TFT array substrate 10, a laminated structure in which wiring such as a pixel switching TFT (Thin Film Transistor) as a driving element, a scanning line, and a data line is formed. In the image display area 10a, a pixel electrode 9a made of a transparent conductive film such as an ITO film is provided on a wiring layer such as a pixel switching TFT, a scanning line, or a data line. An alignment film is formed on the pixel electrode 9a. On the other hand, a light shielding film 23 is formed on the surface of the counter substrate 20 facing the TFT array substrate 10. Then, on the light shielding film 23, a counter electrode 21 made of a transparent conductive film such as an ITO film is formed opposite to the plurality of pixel electrodes 9a in the same manner as the pixel electrode 9a. An alignment film is formed on the counter electrode 21. Further, the liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films. In addition, although not shown here, an optical thin film, which will be described later, is formed immediately below the pixel electrode 9 a on the TFT array substrate 10.

  Although not shown here, in addition to the data line driving circuit 101 and the scanning line driving circuit 104, the TFT array substrate 10 is used for inspecting the quality, defects, etc. of the liquid crystal device during manufacturing or at the time of shipment. An inspection circuit, an inspection pattern, or the like may be formed.

  Next, an electrical configuration of the pixel portion of the liquid crystal device according to the present embodiment will be described with reference to FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix that forms an image display area of the liquid crystal device.

  In FIG. 3, a pixel electrode 9 a and a TFT 30 for controlling the switching of the pixel electrode 9 a are formed in each of a plurality of pixels formed in a matrix that forms the image display region of the liquid crystal device according to the present embodiment. The data line 6 a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Good.

  Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,..., Sn supplied from the data line 6a is obtained by closing the switch of the TFT 30 as a switching element for a certain period. Write at a predetermined timing.

  Image signals S1, S2,..., Sn written to the liquid crystal layer 50 (see FIG. 2) via the pixel electrode 9a are held for a certain period with the counter electrode formed on the counter substrate. The liquid crystal layer 50 modulates light and enables gradation display by changing the orientation and order of the molecular assembly according to the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The light transmittance is increased, and light having a contrast corresponding to an image signal is emitted from the liquid crystal device as a whole.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode 21 (see FIG. 2). One electrode of the storage capacitor 70 is connected to the drain of the TFT 30 in parallel with the pixel electrode 9a, and the other electrode is connected to a capacitor wiring 300 with a fixed potential so as to have a constant potential.

  Next, the optical thin film according to the present embodiment will be described with reference to FIGS. FIG. 4 is a partial enlarged cross-sectional view of the portion C1 in FIG. FIG. 5 is a graph showing the relationship between the thickness of the optical thin film and the transmittance. In FIG. 4, the illustration of the light shielding film 23 of FIG. 2 is omitted. In FIG. 4, in order to make each layer and each member recognizable on the drawing, the scale is different for each layer and each member.

  In FIG. 4, on the TFT array substrate 10, various layers including wirings such as TFTs 30, scanning lines 3a, and data lines 6a (not shown) are laminated, and an interlayer insulating film 89 is formed on the upper layer side of these layers. Has been. The interlayer insulating film 89 is formed of NSG (non-silicate glass) or silicon oxide film. Note that the interlayer insulating film 89 may be formed of silicate glass such as PSG (phosphorus silicate glass), BSG (boron silicate glass), or BPSG (boron phosphorus silicate glass), silicon oxide, or the like. An optical thin film 91 and a pixel electrode 9a, which will be described later, are sequentially stacked on the interlayer insulating film 89, and an alignment film 16 made of, for example, a polyimide film is formed on the pixel electrode 9a. On the other hand, a counter electrode 21 is laminated on the counter substrate 20, and an alignment film 22 made of, for example, a polyimide film is formed on the counter electrode 21. The liquid crystal layer 50 takes a predetermined alignment state between the pair of alignment films 16 and 22. The alignment films 16 and 22 may be formed of an inorganic film such as silica (SiO 2) other than an organic film such as a polyimide film. That is, the alignment films 16 and 22 may be organic alignment films made of organic materials or inorganic alignment films made of inorganic materials.

  As shown in FIG. 4, in this embodiment, in particular, the optical thin film 91 is laminated between the interlayer insulating film 89 and the pixel electrode 9a. That is, on the TFT array substrate 10, the interlayer insulating film 89, the optical thin film 91, and the pixel electrode 9a are laminated in this order. Further, particularly in the present embodiment, the optical thin film 91 has an intermediate refractive index between the refractive index of the interlayer insulating film 89 and the refractive index of the pixel electrode 9a. That is, the refractive index of the interlayer insulating film 89 made of NSG (or silicon oxide film) is about 1.4, and the refractive index of the pixel electrode 9a made of ITO film is about 2.0, whereas the optical thin film 91 is thin. Is formed so as to be in the range of 1.6 to 1.8. The optical thin film 91 is made of, for example, a silicon nitride film (SiN), a silicon oxynitride film (SiON), or the like. Therefore, the transmittance when the incident light that enters the pixel electrode 9a through the counter substrate 20, the liquid crystal layer 50, and the like is transmitted through the pixel electrode 9a and emitted into the interlayer insulating film 89 by the optical thin film 91, for example. Can be increased. That is, if no countermeasure is taken and the pixel electrode 9a is provided on the interlayer insulating film 89, a relatively large difference in refractive index between the interlayer insulating film 89 and the pixel electrode 9a (that is, the difference in refractive index). Causes a relatively large interface reflection at the interface between the pixel electrode 9a and the interlayer insulating film 89. However, according to the present embodiment, the interface reflection can be reduced by the optical thin film 91 having an intermediate refractive index (that is, a refractive index in the range of 1.6 to 1.8). That is, the difference in refractive index between the pixel electrode 9 a and the optical thin film 91 (that is, the difference in refractive index is in the range of about 0.2 to 0.4), and the refractive index between the optical thin film 91 and the interlayer insulating film 89. (That is, the difference in refractive index is within the range of about 0.2 to 0.4) is the difference in refractive index between the pixel electrode 9a and the interlayer insulating film 89 (that is, the difference in refractive index is Therefore, the amount of interface reflection at the interface between the pixel electrode 9a and the optical thin film 91 and the amount of interface reflection at the interface between the optical thin film 91 and the interlayer insulating film 89 are both low. The amount of interface reflection at the interface with the insulating film 89 is smaller. Further, the interface reflection amount at the interface between the pixel electrode 9 a and the optical thin film 91 and the interface reflection amount at the interface between the optical thin film 91 and the interlayer insulating film 89 are the same as the pixel electrode 9 a and the interlayer insulating film 89. It is smaller than the amount of interface reflection at the interface. Therefore, for example, it is possible to increase the transmittance when the light is transmitted through the pixel electrode 9a and emitted into the interlayer insulating film 89 (that is, into the TFT array substrate 10).

  FIG. 5 is a schematic diagram of a laminated film having a laminated structure in which, for example, an optical thin film made of, for example, a silicon nitride film (SiN), a silicon oxynitride film (SiON), and an ITO film are laminated on a substrate made of a silicon oxide film. The relationship between the film thickness of an optical thin film and the transmittance | permeability at the time of performing the simulation which changes the film thickness or refractive index of a thin film is shown. Here, the transmittance is a ratio of the intensity of the emitted light after the incident light passes through the ITO film, the optical thin film, and the substrate to the intensity of the incident light.

  Data E1 in FIG. 5 shows the relationship between the optical thin film thickness and transmittance when the refractive index of the optical thin film is 1.72, and data E2 in FIG. 5 shows the refractive index of the optical thin film. The relationship between the film thickness and transmittance of the optical thin film at 1.62 is shown. The film thickness of the ITO film is 80 nm, and as shown in FIG. 5, the transmittance when no optical thin film is provided (that is, the film thickness of the optical thin film is zero) is about 0.75.

  As shown in FIG. 5, in both cases where the refractive index of the optical thin film is 1.72 and 1.62, by providing the optical thin film, the transmittance is higher than that without the optical thin film. In particular, the transmittance is high when the thickness of the optical thin film is in the range of 55 to 100 nm. Therefore, it is preferable to provide an optical thin film having a refractive index in the range of 1.6 to 1.8 and a film thickness in the range of 55 to 100 nm between the substrate and the ITO film. Thereby, the transmittance can be effectively improved.

  Next, the arrangement of the optical thin film according to this embodiment will be described with reference to FIGS. FIG. 6 is a cross-sectional view taken along the line AA ′ of FIG. 1, and FIG. 7 is a schematic diagram showing a region where an optical thin film is formed.

  As shown in FIGS. 6 and 7, in this embodiment, in particular, the optical thin film 91 is at least between the interlayer insulating film 89 and the pixel electrode 9a in the image display region 10a (in other words, the TFT array substrate 10 and the pixel electrode 9a). And at least not formed in the seal region 52a. That is, the interface between the alignment film 16 and the optical thin film 91 is not formed in the seal region 52a. In other words, the interface between the alignment film 16 and the interlayer insulating film 89 is formed in the seal region 52a. Therefore, due to the low adhesion at the interface between the alignment film 16 made of polyimide or the like and the optical thin film 91 made of silicon nitride or silicon oxynitride film, the alignment film 16 and the optical thin film 91 are It is possible to reduce or prevent moisture from penetrating into the image display region 10a through the interface. That is, by forming the interface between the alignment film 16 and the interlayer insulating film 89 in the seal region 52a, the adhesion at the interface can be enhanced. Therefore, the moisture resistance of the apparatus can be improved.

  As shown in FIG. 7, in this embodiment, in particular, the optical thin film 91 is a data line driving circuit forming region in which the data line driving circuit 101 (see FIG. 1) is formed as viewed in plan on the TFT array substrate 10. It has the part 913 formed in 101a. That is, a portion 913 that is a part of the optical thin film 91 is provided on the upper side of the data line driving circuit 101 so as to overlap the data line driving circuit 101 when viewed in plan on the TFT array substrate 10. As described above, the optical thin film 91 is made of, for example, a silicon nitride film (SiN), a silicon oxynitride film (SiON), or the like, and hardly penetrates moisture. Therefore, it is possible to reduce or prevent external moisture from entering the vicinity of the transistor included in the data line driver circuit 101 and adversely affecting the operation of the transistor. That is, the moisture resistance of the data line driving circuit 101 can be improved.

  Furthermore, as shown in FIG. 7, in the present embodiment, the optical thin film 91 is provided not only in the image display area 10a but also in the light shielding area 53a. That is, the scanning line driving circuit 104 and the sampling circuit 7 provided in the light shielding region 53a are provided on the upper layer side so as to overlap the scanning line driving circuit 104 and the sampling circuit 7 when viewed in plan on the TFT array substrate 10. It has been. Therefore, it is possible to reduce or prevent external moisture from entering the vicinity of the transistors included in the scan line driver circuit 104 and the sampling circuit 7 and adversely affecting the operation of the transistors. That is, the moisture resistance of the scanning line driving circuit 104 and the sampling circuit 7 can be improved.

  Next, the arrangement of the optical thin film according to the first modification of the present embodiment will be described with reference to FIGS. FIG. 8 is a schematic view showing the arrangement of the optical thin film according to the first modification in the seal region, and FIG. 9 is a cross-sectional view having the same concept as FIG. 6 in the first modification.

  As shown in FIG. 8, particularly in the first modification, the optical thin film 91 is a portion 911 formed so as to surround the image display region 10a in the seal region 52a when viewed in plan on the TFT array substrate 10. have. The portion 911 which is a part of the optical thin film 91 is composed of two portions on the TFT array substrate 10 that are close to the image display region 10a and far from the image display region 10a, and each portion surrounds the image display region 10a. Thus, it is formed continuously. That is, when viewed in plan on the TFT array substrate 10, a portion 911 is formed so as to double surround the image display region 10 a by these two portions. As described above, the optical thin film 91 is made of, for example, a silicon nitride film (SiN), a silicon oxynitride film (SiON), or the like, and hardly penetrates moisture. Therefore, it is possible to reduce or prevent moisture from entering the image display region 10a from the outside. That is, as shown in FIG. 9 in addition to FIG. 8, the portion 911 of the optical thin film 91 functions as a partition that separates the outside from the image display region 10a, thereby blocking the moisture intrusion path almost or completely. Can do. Therefore, the moisture resistance of the device can be further improved. In addition, an interface between the alignment film 16 and the interlayer insulating film 89 is formed in a region excluding a region where the portion 911 of the optical thin film 91 is formed in the seal region 52a, and adhesion at the interface is enhanced.

  Next, the arrangement of the optical thin film according to the second modification of the present embodiment will be described with reference to FIG. FIG. 10 is a schematic diagram having the same concept as in FIG. 8 in the second modification.

As shown in FIG. 10, particularly in the second modification, the optical thin film 91 is formed separately from each other in the seal region 52a when viewed in plan on the TFT array substrate 10, and the image display region 10a. And a plurality of portions 912 arranged to surround. The plurality of portions 912 of the optical thin film 91 are arranged as a plurality of rows shifted from each other in a direction intersecting with the direction from the seal region 52a toward the image display region 10a so as to surround the image display region 10a. That is, the portion 912 includes a plurality of portions 912a, 912b, and 912b, and the plurality of portions 912a, 912b, and 912b are arranged in rows that are separated from each other and surround the image display region 10a. . These columns are shifted from each other in the arrangement direction (that is, the direction crossing the direction from the inside of the seal area 52a toward the image display area 10a). In other words, the plurality of portions 912a, 912b, and 912b are arranged so as to close the interval in which the portions are arranged. Accordingly, the plurality of portions 912 of the optical thin film 91 function as partition walls that separate the image display region 10a from the outside, similarly to the portion 911 in the first modification described above with reference to FIG. It can be blocked by complicating or lengthening the route. Therefore, the moisture resistance of the device can be further improved. In addition, an interface between the alignment film 16 and the interlayer insulating film 89 is formed in a region excluding a region where the portion 912 of the optical thin film 91 is formed in the seal region 52a, and adhesion at the interface is enhanced.
Second Embodiment
Next, a liquid crystal device according to a second embodiment will be described with reference to FIGS. FIG. 11 is a partially enlarged sectional view having the same concept as in FIG. 4 in the second embodiment. FIG. 12 is a sectional view having the same concept as in FIG. 6 in the second embodiment.

  In FIG. 11, the liquid crystal device according to the present embodiment is stacked between the counter substrate 20 and the counter electrode 21 in a region excluding the image display region 10 a and at least the seal region 10 a on the counter substrate 20. It differs from the liquid crystal device according to the first embodiment described above in that an optical thin film 92 having a refractive index intermediate between the refractive index of the substrate 20 and the refractive index of the counter electrode 21 is provided. Other points are generally the same as those of the liquid crystal device according to the first embodiment described above.

  In FIG. 11, in the present embodiment, in particular, the optical thin film 92 is laminated between the counter substrate 20 and the counter electrode 21. That is, the optical thin film 92 and the counter electrode 21 are laminated on the counter substrate 20 in this order. The optical thin film 92 has an intermediate refractive index between the refractive index of the counter substrate 20 and the refractive index of the counter electrode 21 made of an ITO film. That is, the refractive index of the counter substrate 20 made of a glass substrate is about 1.4 and the refractive index of the counter electrode 21 made of an ITO film is about 2.0, whereas the refractive index of the optical thin film 92 is 1 It is formed to be in the range of .6 to 1.8. The optical thin film 92 is made of, for example, a silicon nitride film (SiN), a silicon oxynitride film (SiON), or the like. Therefore, similarly to the optical thin film 91 provided on the TFT array substrate 10 described above, the optical thin film 92 allows incident light incident on the counter substrate 20 to pass through the counter electrode 21 and enter the alignment film 22 and the liquid crystal layer 50. The transmittance when emitted can be increased.

Furthermore, as shown in FIG. 12, in this embodiment, in particular, the optical thin film 92 is laminated between the counter substrate 20 and the counter electrode 21 at least in the image display region 10a, and at least in the seal region 52a. Not formed. That is, the interface between the alignment film 22 and the optical thin film 92 is not formed in the seal region 52a. In other words, the interface between the alignment film 22 and the counter substrate 20 is formed in the seal region 52a. Accordingly, the alignment film 22 and the optical thin film 92 are externally caused by low adhesion at the interface between the alignment film 22 made of, for example, a polyimide film and the optical thin film 92 made of, for example, a silicon nitride film, a silicon oxynitride film, or the like. It is possible to reduce or prevent moisture from penetrating into the image display region 10a through the interface with the. That is, by forming the interface between the alignment film 22 and the counter substrate 20 in the seal region 52a, the adhesion at the interface can be improved.
<Third Embodiment>
Next, a liquid crystal device according to a third embodiment will be described with reference to FIG. FIG. 13 is a sectional view having the same concept as in FIG. 6 in the third embodiment.

  In FIG. 13, the liquid crystal device of this embodiment is different from the liquid crystal device according to the first embodiment described above in that the alignment film 16 is provided at least in a region excluding the seal region 52a. Other points are generally the same as those of the liquid crystal device according to the first embodiment described above.

In FIG. 13, particularly in the present embodiment, the alignment film 16 is provided in a region excluding at least the seal region 52a. That is, the alignment film 16 is not formed at least in the seal region 52a. Therefore, it is possible to prevent moisture from penetrating from the interface between the optical thin film 91 and the alignment film 16. That is, the moisture resistance of the apparatus can be improved by forming an interface between the sealing material 52 and the interlayer insulating film 89 in the seal region 52a and improving the adhesion at the interface.
<Fourth embodiment>
Next, a liquid crystal device according to a fourth embodiment will be described with reference to FIG. FIG. 14 is a sectional view having the same concept as FIG. 6 in the fourth embodiment.

  In FIG. 14, the liquid crystal device of this embodiment is different from the liquid crystal device according to the first embodiment described above in that an optical thin film is not provided on the TFT array substrate 10. Further, the counter substrate 20 is laminated between the counter substrate 20 and the counter electrode 21 in a region excluding the image display region 10a and at least the seal region 10a, and the refractive index of the counter substrate 20 and the refraction of the counter electrode 21 are also stacked. It differs from the liquid crystal device according to the first embodiment described above in that it includes an optical thin film 92 having a refractive index in the middle of the refractive index. Other points are generally the same as those of the liquid crystal device according to the first embodiment described above.

  In FIG. 14, the optical thin film 92 is laminated between the counter substrate 20 and the counter electrode 21 as in the second embodiment described above. That is, the optical thin film 92 and the counter electrode 21 are laminated on the counter substrate 20 in this order. The optical thin film 92 has an intermediate refractive index between the refractive index of the counter substrate 20 and the refractive index of the counter electrode 21 made of an ITO film. Therefore, similarly to the second embodiment described above, the transmittance when the incident light incident on the counter substrate 20 is transmitted through the counter electrode 21 and emitted into the alignment film 22 and the liquid crystal layer 50 is reduced by the optical thin film 92. Can be increased.

  Furthermore, as shown in FIG. 14, as in the second embodiment described above, the optical thin film 92 is laminated between the counter substrate 20 and the counter electrode 21 at least in the image display region 10a, and at least a seal is formed. It is not formed in the region 52a. Therefore, as in the second embodiment described above, by forming the interface between the alignment film 22 and the counter substrate 20 in the seal region 52a, the adhesion at the interface can be enhanced.

In the present embodiment, an optical thin film such as the optical thin film 91 in the first embodiment described above is not provided on the TFT array substrate 10. That is, the interface between the alignment film 16 and the optical thin film from the outside due to the low adhesion at the interface between the alignment film 16 made of polyimide or the like and the optical thin film made of silicon nitride film or silicon oxynitride film, for example. There is no possibility that moisture will permeate into the image display area 10a via the.
<Manufacturing method>
Next, a manufacturing method of the liquid crystal device for manufacturing the liquid crystal device according to the first embodiment will be described with reference to FIG. FIG. 15 is a flowchart for explaining each step of the manufacturing process of the liquid crystal device according to the first embodiment.

  First, in FIG. 15, wirings such as a pixel switching TFT 30, a scanning line 3a, and a data line 6a are formed on the TFT array substrate 10 from various conductive films, semiconductor films, insulating films, and the like, and an interlayer insulating film 89 is formed. (Step S11). At this time, the interlayer insulating film 89 is formed by stacking NSGs by, for example, a CVD (Chemical Vapor Deposition) method. The interlayer insulating film 89 may be formed by laminating silicate glass such as PSG, BSG, or BPSG, silicon nitride, silicon oxide, or the like. The refractive index of the interlayer insulating film 89 formed in this way is about 1.4.

  Next, in the optical thin film forming step, a silicon oxynitride film (SiON) is laminated on the interlayer insulating film 89 by using, for example, a CVD method or the like using silicon nitride (SiN) while supplying oxygen (O 2) gas. The optical thin film 91 is formed (step S12). At this time, for example, the optical thin film 91 has an intermediate refractive index (for example, a refractive index of 1.6 to 1.8) between the refractive index of the interlayer insulating film 89 and the refractive index of the pixel electrode 9a. Adjust environmental conditions such as the amount of oxygen gas to be supplied, pressure, and temperature. The optical thin film 91 is preferably formed so that the film thickness is in the range of 55 to 100 nm.

  In the present embodiment, in particular, in the optical thin film forming step, the optical thin film 91 is formed on at least the image display region 10a on the TFT array substrate 10 (in other words, on the interlayer insulating film 89), and is not formed in the seal region 52a. Therefore, the optical thin film 91 can improve the transmittance while maintaining the moisture resistance of the apparatus. In the optical thin film forming step, the optical thin film 91 may be partially formed in the seal region 52a. For example, the optical thin film 91 is also formed in the region where the data line driving circuit 101, the scanning line driving circuit 104, etc. are formed. It may be formed.

  Next, an ITO film is laminated in a predetermined pattern on the image display area 10a on the optical thin film 91 to form a pixel electrode 9a (step S13).

  Next, the alignment film 16 is formed by applying polyimide on the surface of the TFT array substrate 10 (step S14). At this time, the formed alignment film 16 is rubbed.

  In FIG. 15, an ITO film is laminated on the counter substrate 20 by sputtering or the like in parallel with or before or after the manufacturing process of the TFT array substrate 10 from step S11 to step S14 to form the counter electrode 21 ( Step S21).

  Next, the alignment film 22 is formed by applying polyimide on the surface of the counter substrate 20 (step S22). At this time, the formed alignment film 22 is rubbed.

  Thereafter, in the bonding process, the TFT array substrate 10 and the counter substrate 20 are separated from the side on which the alignment film 16 is formed on the TFT array substrate 10 and the side on which the alignment film 22 is formed on the counter substrate 20 with the sealing material 52. (Step S31). Here, in particular, since the interface between the alignment film 16 having low interface adhesion and the optical thin film 91 is not formed in the seal region 52a, the moisture resistance of the apparatus is enhanced.

  Subsequently, liquid crystal is injected between the TFT array substrate 10 and the counter substrate 20 that are bonded together (step S32).

According to the liquid crystal device manufacturing method described above, the liquid crystal device according to the first embodiment described above can be manufactured. Here, in particular, in the optical thin film forming step, the transmittance can be improved by forming the optical thin film 91 at least in the image display region 10a while maintaining the moisture resistance by not forming the optical thin film 91 in the seal region 52a. Therefore, a liquid crystal device capable of high quality display can be manufactured.
<Electronic equipment>
Next, the case where the liquid crystal device which is the above-described electro-optical device is applied to various electronic devices will be described.

  First, a projector using this liquid crystal device as a light valve will be described. FIG. 16 is a plan view showing a configuration example of the projector. As shown in FIG. 16, a projector 1100 includes a lamp unit 1102 made of a white light source such as a halogen lamp. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Therefore, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display image by the liquid crystal panel 1110G needs to be horizontally reversed with respect to the display images by the liquid crystal panels 1110R and 1110B.

  In addition, since light corresponding to each primary color of R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  In addition to the electronic device described with reference to FIG. 16, a mobile personal computer, a mobile phone, a liquid crystal television, a viewfinder type, a monitor direct view type video tape recorder, a car navigation device, a pager, and an electronic notebook , Calculators, word processors, workstations, videophones, POS terminals, devices with touch panels, and the like. Needless to say, the present invention can be applied to these various electronic devices.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or concept of the invention that can be read from the claims and the entire specification. The manufacturing method and the electronic apparatus provided with the electro-optical device are also included in the technical scope of the present invention.

It is a top view which shows the whole structure of the liquid crystal device which concerns on 1st Embodiment. It is sectional drawing of the HH 'line of FIG. FIG. 3 is an equivalent circuit diagram of various elements and the like in the pixel of the liquid crystal device according to the first embodiment. It is a partial expanded sectional view of the C1 part of FIG. It is a graph which shows the relationship between the film thickness of an optical thin film, and the transmittance | permeability. It is sectional drawing of the AA 'line of FIG. It is a schematic diagram which shows the area | region in which an optical thin film is formed. It is a schematic diagram which shows arrangement | positioning in the seal | sticker area | region of the optical thin film which concerns on a 1st modification. It is sectional drawing with the same meaning as FIG. 6 in a 1st modification. It is a schematic diagram with the same meaning as FIG. 8 in a 2nd modification. It is a partial expanded sectional view of the same meaning as FIG. 4 in 2nd Embodiment. It is sectional drawing with the same meaning as FIG. 6 in 2nd Embodiment. It is sectional drawing with the same meaning as FIG. 6 in 3rd Embodiment. It is sectional drawing with the same meaning as FIG. 6 in 4th Embodiment. 4 is a flowchart for explaining each step of a manufacturing process of the liquid crystal device according to the first embodiment. It is a top view which shows the structure of the projector which is an example of the electronic device to which the electro-optical apparatus is applied.

Explanation of symbols

  3a ... Scanning line, 6a ... Data line, 7 ... Sampling circuit, 9a ... Pixel electrode, 10 ... TFT array substrate, 10a ... Image display area, 16 ... Alignment film, 20 ... Counter substrate, 21 ... Counter electrode, 22 ... Orientation Film 23 .. light-shielding film 50 .. liquid crystal layer 52 .. seal material 52 a .. seal region 53 .. frame light-shielding film 53 a .. light-shielding region 89 .. interlayer insulating film 91, 92. Drive circuit 102 ... External circuit connection terminal 104 ... Scanning line drive circuit 106 ... Vertical conduction terminal 107 ... Vertical conduction material

Claims (15)

A pair of first and second substrates sandwiching the electro-optic material;
A pixel electrode made of a first transparent conductive film provided on the first substrate;
A first alignment film formed on the pixel electrode and regulating an alignment state of the electro-optic material;
A seal material for bonding the first and second substrates to each other in a seal region along the periphery of the display region provided with the pixel electrode;
The first substrate is stacked between the first substrate and the pixel electrode in a region excluding at least the display region and a partial region forming at least a part of the seal region. An electro-optical device comprising: a first optical thin film having a refractive index intermediate between a refractive index and a refractive index of the pixel electrode.   The electro-optical device according to claim 1, wherein the first optical thin film is provided at least in a region excluding the seal region.   2. The first optical thin film includes a first portion formed so as to surround the display area in the seal area when viewed in plan on the first substrate. Electro-optic device.   The first optical thin film includes a plurality of second portions formed in the seal region so as to be separated from each other and to surround the display region when viewed in plan on the first substrate. The electro-optical device according to claim 1. A peripheral circuit disposed on a peripheral region located around the display region on the first substrate and including a plurality of transistors, and driving the pixel electrode;
The first optical thin film has at least one third portion formed in a region at least partially including a region in which the plurality of transistors are formed when viewed in plan on the first substrate. The electro-optical device according to any one of claims 1 to 4.   The electro-optical device according to claim 1, wherein the first alignment film is provided at least in a region excluding the seal region.   The electro-optical device according to claim 1, wherein the first transparent conductive film is an ITO film.   The electro-optical device according to claim 1, wherein the first optical thin film has a refractive index in a range of 1.6 to 1.8.   9. The electro-optical device according to claim 1, wherein a light absorption coefficient of the first optical thin film is smaller than a light absorption coefficient of the first transparent conductive film.   The electro-optical device according to claim 1, wherein the first optical thin film includes at least one of an inorganic nitride film and an oxynitride film.   The electro-optical device according to claim 1, wherein the first alignment film is made of polyimide. A counter electrode made of a second transparent conductive film provided on the second substrate;
A second alignment film that is formed on the counter electrode and regulates the alignment state of the electro-optic material;
At least the display area on the second substrate and the area excluding the partial area are stacked on the second substrate between the second substrate and the counter electrode, and on the second substrate. 12. The electro-optical device according to claim 1, further comprising: a second optical thin film having a refractive index that is intermediate between a refractive index and a refractive index of the counter electrode. A pair of first and second substrates sandwiching the electro-optic material;
A pixel electrode made of a first transparent conductive film provided on the first substrate;
A counter electrode made of a second transparent conductive film provided on the second substrate;
An alignment film that is formed on the counter electrode and regulates the alignment state of the electro-optic material;
A seal material for bonding the first and second substrates to each other in a seal region along the periphery of the display region provided with the pixel electrode;
The second substrate is laminated between the second substrate and the counter electrode in a region excluding at least the display region on the second substrate and a partial region forming at least a part of the seal region. An electro-optical device, comprising: an optical thin film having a refractive index intermediate between the refractive index and the refractive index of the counter electrode.   An electronic apparatus comprising the electro-optical device according to claim 1. An electro-optical device manufacturing method for manufacturing an electro-optical device including a pair of first and second substrates sandwiching an electro-optical material and a pixel electrode provided on the first substrate,
An optical thin film that forms an optical thin film having a refractive index intermediate between the refractive index of the first substrate and the refractive index of the pixel electrode on the first substrate so as to be adjacent to the first substrate. Forming process;
Forming a pixel electrode by laminating a transparent conductive film on an upper layer side adjacent to the optical thin film in a display region on the first substrate;
Forming an alignment film that regulates an alignment state of the electro-optic material on the pixel electrode;
Bonding the first and second substrates to each other with a sealing material in a sealing region along the periphery of the display region,
The optical thin film forming step includes forming the optical thin film in a region excluding at least the display region on the first substrate and a partial region forming at least a part of the seal region. Production method.

Images