JP2007208223A - Method and device for wet etching - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wet etching device and a wet etching method of a simple configuration, which has a sealing property and reduces a variation in etching amount in the substrate plane. <P>SOLUTION: The wet etching device 1 is capable of housing a substrate inside, and comprises a process bath 2 for holding a chemical liquid for etching and transportation arms 3a and 3b for transporting a semiconductor substrate 6 into the process bath 2. The transportation arms 3a and 3b comprise handling parts for holding the semiconductor substrate 6, and rotates the semiconductor substrate 6 while the handling parts hold the semiconductor substrate 6. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a wet etching apparatus and a wet etching method for etching a substrate surface using a chemical solution.

  In recent years, as semiconductor devices have been miniaturized, it has been required to reduce the thickness of a gate insulator formed on a substrate. The gate insulating film is formed by forming an oxide film on the substrate and then etching the oxide film to a predetermined thickness by etching. At this time, the gate insulating film needs to be uniformly etched on the same substrate surface and each substrate surface subjected to batch processing. If the gate insulating film is not uniformly etched, the film thickness varies on the substrate surface, which may affect the manufacturing yield or the characteristics / reliability of the semiconductor element formed on the substrate surface.

  Etching methods used for forming the gate insulating film include wet etching and dry etching. Among these, wet etching has advantages such as batch processing of a large number of substrates at a time and low price of equipment and chemicals compared with dry etching. Therefore, generally, wet etching is used to form the gate insulating film.

  In order to batch-process a plurality of substrates by wet etching, a wet etching apparatus is used. The wet etching apparatus is configured to accommodate a plurality of substrates in a treatment tank that stores a chemical for etching. In addition, the wet etching apparatus includes a conventional type having a plurality of processing tanks for storing chemicals for etching a substrate and a single processing tank for storing chemicals for etching a substrate. Thereafter, there is a one bath type in which the chemical solution in the treatment tank is replaced with pure water in order to clean the substrate.

  A conventional one-bus type wet etching apparatus is described in Patent Document 1. Hereinafter, a configuration of a conventional one-bus type wet etching apparatus described in Patent Document 1 will be described with reference to FIG. FIG. 4 is a front view showing a schematic configuration of a conventional wet etching apparatus 101.

  As shown in FIG. 4, the conventional wet etching apparatus 101 includes a processing tank 102, a rotation roller 103, a pressing roller 104, and a discharge tube 105.

  The processing tank 102 is a container having a rectangular bottom surface, and the top surface thereof is not provided. The bottom surface is a current plate, and a discharge tube 105 is provided below the current plate. The rotation roller 103 is for rotating the substrate, and is rotated by a driving means provided outside the processing tank 102. The rotating roller 103 has a cylindrical shape, and both ends thereof are connected to both side surfaces of the processing tank 102 facing each other. The shaft passing through the center of the rotation roller 103 is connected to the driving means via the processing tank 102. The pressing roller 104 is for pressing the semiconductor substrate 106. The discharge tube 105 is for discharging pure water for cleaning the semiconductor substrate 106 into the processing tank 102 through a current plate.

  The semiconductor substrate 106 having an oxide film formed on the surface in advance is immersed in a chemical solution (for example, hydrofluoric acid) stored in the treatment tank 102 and supported by the rotation roller 103 and the pressing roller 104. Then, after etching the semiconductor substrate 106 with the chemical solution, pure water for cleaning the semiconductor substrate 106 is introduced into the treatment tank 102 from the discharge tube 105. At this time, the chemical solution stored in the processing tank 102 is discharged from the upper surface of the processing tank 102. Therefore, there is a difference in chemical concentration between the vicinity of the bottom surface and the vicinity of the top surface of the treatment tank 102. When a difference occurs in the chemical concentration, the etching amount varies on the surface of the semiconductor substrate 106.

  Therefore, the semiconductor substrate 106 pressed by the pressing roller 104 is rotated about the center of the semiconductor substrate 106 by rotating the rotating roller 103 by the driving means provided outside the processing tank 102. .

Thereby, the wet etching apparatus 101 can improve the uniformity of the etching amount on the same substrate surface and on each substrate surface subjected to batch processing.
JP 2001-284305 A (publication date: October 12, 2001)

  However, the conventional wet etching apparatus 101 does not consider the variation in the immersion time on the substrate surface that occurs when the semiconductor substrate 106 is immersed in the chemical stored in the processing bath 102. In the wet etching apparatus 101, when the substrate is immersed in the chemical stored in the processing bath 102, a difference of 3 to 5 seconds occurs between the position a on the semiconductor substrate 106 and the position c. Therefore, the etching amount varies as shown in FIG. 5 between the positions a and c on the semiconductor substrate 106. FIG. 5 is a step view of the semiconductor substrate 106 processed by the conventional wet etching apparatus 101. In addition, a to c in the figure correspond to a to c in FIG. 4, and the substrate is immersed in the chemical stored in the processing tank 102 in the order of c, b, and a.

  In the wet etching apparatus 101, the rotation roller 103 is rotated by a driving unit provided outside the processing tank 102. Therefore, the processing tank 102 is provided with a hole for connecting the driving means and the rotation roller 103. As a result, it becomes difficult to maintain the sealing property and wear resistance of the treatment tank 102.

  Further, in the conventional type wet etching apparatus, since the chemical solution stored in the processing tank is not replaced with pure water, the semiconductor substrate is not rotated while the semiconductor substrate is etched in the processing tank. . Therefore, the semiconductor substrate is carried out from the processing tank in the same direction as the direction carried into the processing tank. As a result, the variation in the etching amount becomes larger at the positions a and c on the semiconductor substrate than when the one-bus type wet etching apparatus is used.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a wet etching apparatus and a wet etching apparatus that have a hermeticity and reduce variations in the etching amount in the substrate surface with a simple configuration. An etching method is provided.

  In order to solve the above problems, the wet etching apparatus of the present invention can accommodate a substrate therein, and stores a chemical tank for etching and transports the substrate into the processing tank. The transport member has a substrate holding part for holding the substrate, and the substrate holding part holds the substrate and rotates the substrate.

  With the above configuration, the substrate can be rotated in a state where the substrate is held by the transport member that transports the substrate into the processing tank. As a result, the position of the substrate when the substrate is carried into the processing tank and the position of the substrate when the substrate is carried out of the processing tank can be changed.

  Thereby, the dispersion | variation in the immersion time in each part on a substrate surface is reduced by rotating the position of the board | substrate when carrying in in a processing tank, and the position of the board | substrate when carrying out from the inside of a processing tank. . Therefore, the variation in the etching amount in each part on the substrate surface is reduced.

  For example, by inverting the position of the substrate when it is carried into the processing tank and the position of the substrate when it is carried out from the processing tank, the immersion time in each part on the substrate surface becomes uniform. Therefore, the etching amount in each part on the substrate surface is less uniform and becomes substantially uniform.

  Further, since the conveying member is used to rotate the substrate, it is not necessary to provide a hole in the processing tank and it is not necessary to add parts. As a result, it is possible to reduce the variation in the etching amount with a simple structure and airtightness.

  In the wet etching apparatus of the present invention, the transport member is a pair of members parallel to each other, and the transport member moves in the opposite directions while holding the substrate, thereby moving the substrate to the substrate. May be rotated about the rotation axis.

  With the configuration described above, the substrate can be rotated about the center of the substrate as a rotation axis by moving the transport members in opposite directions.

  Thereby, the dispersion | variation in the immersion time in each part on a substrate surface is reduced by rotating the position of the board | substrate when carrying in in a processing tank, and the position of the board | substrate when carrying out from the inside of a processing tank. . Therefore, the variation in the etching amount in each part on the substrate surface is reduced.

  Further, in the wet etching apparatus of the present invention, the pair of transport members release the substrate by moving the substrate holders in a direction away from each other. A holding member for holding the state of the substrate when the holding of the substrate is released may be provided.

  If the predetermined angle cannot be rotated at a time by moving the conveying members in opposite directions, it is necessary to move the conveying members in the opposite directions again. Therefore, it is necessary to once cancel the holding of the substrate by the substrate holding unit and return the positional relationship between the pair of transport members to the initial state.

  With the above configuration, the substrate holding part releases the holding of the substrate and adjusts the position of the transport member while maintaining the state of the substrate by the holding member. Then, the transport member whose position has been adjusted holds the substrate again and moves in the opposite directions to further rotate the substrate.

  Accordingly, by moving the transport member once, the length of the substrate holding portion can be shortened and the volume of the processing tank can be reduced as compared with the case where the substrate is rotated by a predetermined angle. It becomes possible.

  Further, the wet etching apparatus of the present invention may include a drying unit for drying the substrate carried out of the processing tank.

  The substrate etched with the chemical solution needs to be dried immediately after being taken out of the treatment tank. This is because the chemical solution remaining on the substrate advances the etching even after the substrate is carried out of the processing tank.

  Therefore, according to the configuration of the present invention, the substrate carried out from the processing tank is dried by the drying means at the moment when the substrate is taken out from the chemical solution. Thereby, it can suppress that etching advances with the said chemical | medical solution adhering to the said board | substrate.

  In the wet etching apparatus of the present invention, the substrate holding part has a substrate holding surface having a circular cross section perpendicular to the bottom surface of the processing tank, and the arc radius of the substrate holding surface is larger than the radius of the substrate. Is also preferably large.

  By the said structure, the part which the said substrate holding surface and the said substrate contact is large compared with the case where a substrate holding surface is a linear structure. Therefore, the substrate holder can stably hold the substrate.

  The wet etching method of the present invention is a wet etching method for etching a substrate surface by immersing the substrate in a chemical solution for etching stored in a processing tank, the substrate being held, and the substrate being The substrate is carried into the processing tank, the substrate is reversed with the center of the substrate as a rotation axis, and the substrate is carried out of the processing tank.

  By the above method, the position of the substrate when the substrate is carried into the processing tank and the position of the substrate when the substrate is carried out from the processing tank can be reversed.

  Thereby, in each part on the said substrate surface, the immersion time to the chemical | medical solution stored in the said processing tank becomes uniform. Therefore, the amount of etching in each part on the substrate surface is less uniform and becomes substantially uniform.

  In the wet etching method of the present invention, the substrate carried out from the processing bath may be sequentially dried at the portion carried out from the chemical stored in the processing bath.

  The substrate treated with the chemical solution needs to be immediately dried when it is unloaded from the treatment tank. This is because the chemical solution remaining on the substrate advances the etching reaction even after the substrate is carried out of the processing tank.

  Therefore, the substrate etched by the chemical solution stored in the treatment tank by the above method is sequentially dried at the moment when it comes out of the chemical solution. Thereby, it can suppress that etching advances with the said chemical | medical solution adhering to the said board | substrate.

  As described above, the wet etching apparatus of the present invention includes a transport member that transports the substrate to the inside of the processing tank, and the transport member has a substrate holding portion for holding the substrate. The harmful substrate holding unit rotates the substrate while holding the substrate.

  The wet etching method of the present invention holds the substrate, carries the substrate into the processing tank, reverses the substrate with the center of the substrate as a rotation axis, and carries the substrate out of the processing tank. It is characterized by doing.

  This makes it possible to rotate the position of the substrate when it is loaded into the processing tank and the position of the substrate when it is unloaded from the processing tank, reducing variations in immersion time at each part on the substrate surface. Is done. And the dispersion | variation in the etching amount in each part on a substrate surface is reduced. Further, since the conveying member is used to rotate the substrate, it is not necessary to provide a hole in the processing tank and it is not necessary to add parts. As a result, there is an effect that it is possible to realize a wet etching apparatus and a wet etching method that can be hermetically sealed with a simple configuration and can reduce variations in etching amount.

  One embodiment of the present invention is described below with reference to FIGS.

  The wet etching apparatus of the present invention performs etching by carrying a semiconductor substrate held by a conveying member into a processing tank in which a chemical for etching is stored.

  The configuration of the wet etching apparatus 1 of the present embodiment will be described with reference to FIG. FIG. 1 is a front view showing a schematic configuration of a wet etching apparatus 1 when a substrate is carried in. In addition, the arrow of the broken line in a figure has shown the direction to which a semiconductor substrate moves. Further, the Δ mark in the figure indicates the position of the notch provided in the semiconductor substrate.

  As shown in FIG. 1, the wet etching apparatus 1 includes a processing tank 2, transfer arms (transfer members) 3a and 3b, and guides (holding members) 4a and 4b.

  The wet etching apparatus 1 of the present embodiment is used for uniformly etching the surface of the semiconductor substrate 6.

  The processing tank 2 is a container having a rectangular bottom surface, and the top surface thereof is not provided. Then, when the semiconductor substrate 6 is etched, a chemical solution corresponding to the material to be etched is introduced into the processing tank 2.

  The transfer arms 3 a and 3 b are for holding the semiconductor substrate 6 perpendicular to the bottom surface of the processing tank 2 and immersing the semiconductor substrate 6 in a chemical solution stored in the processing tank 2. The transfer arms 3a and 3b are a pair of members having handling parts (substrate holding parts) parallel to each other, and the handling parts can be moved in parallel with each other. Further, the transfer arms 3a and 3b can also move in directions opposite to each other in a direction perpendicular to the bottom surface of the processing tank 2, and thereby the semiconductor substrate 6 held can be rotated. The transfer arms 3a and 3b are driven by a driving means (not shown).

  The handling portion has a substrate holding surface having an arc-shaped vertical section, and the arc radius is larger than the radius of the semiconductor substrate 6. By making the substrate holding surface arcuate, the contact portion between the substrate holding surface and the semiconductor substrate 6 becomes larger than when the substrate holding surface has a linear configuration. Therefore, the transfer arms 3a and 3b can hold the semiconductor substrate 6 stably.

  Thus, since the transfer arms 3a and 3b are used to rotate the semiconductor substrate 6, there is no need to provide a hole in the processing tank 2 and to add a new part. Therefore, the sealing property of the processing tank 2 is maintained.

  The guides 4 a and 4 b are for holding the semiconductor substrate 6 perpendicular to the processing tank 2 in the processing tank 2 when the transfer arms 3 a and 3 b are separated from the semiconductor substrate 6. The guides 4a and 4b are cylindrical, and both ends thereof are connected to opposite side surfaces of the processing tank 2. Note that the guides 4 a and 4 b are not limited to a cylindrical shape, and may be any configuration as long as the semiconductor substrate 6 can be held perpendicular to the bottom surface of the processing bath 2.

In addition, the wet etching apparatus 1 of the present embodiment includes a drying unit 5 at a position away from the upper surface of the processing tank 2 by a predetermined distance. The drying means 5 injects N ₂ gas toward the upper surface direction of the treatment tank 2. Therefore, when the semiconductor substrate 6 immersed in the chemical solution stored in the treatment tank 2 is unloaded from the treatment tank 2, the semiconductor substrate 6 is sequentially dried from the portion unloaded from the chemical liquid surface. Note that the gas injected from the drying means 5 is not limited to N ₂ gas. In the wet etching apparatus of the present invention, the drying unit 5 may be omitted.

  As described above, the wet etching apparatus 1 according to the present embodiment rotates the semiconductor substrate 6 by using the transfer arms 3a and 3b, so that the position of the semiconductor substrate 6 when it is carried into the processing tank 2 and the processing. The position of the semiconductor substrate 2 when unloaded from the tank 2 can be reversed. In the present embodiment, the inversion means that the center of the semiconductor substrate 6 is the rotation axis and the rotation is within a range of 170 degrees to 190 degrees.

  Below, the wet etching method of this embodiment is demonstrated with reference to FIG. 1 and FIG. 2 (a)-(h). 2A to 2H are plan views showing respective steps of the wet etching method of the present embodiment. The white arrows indicate the movement directions of the transfer arms 3a and 3b, and the solid arrows indicate the rotation direction of the semiconductor substrate 6.

  As shown in FIG. 1, the semiconductor substrate 6 held at both ends by the transfer arms 3 a and 3 b in the chemical solution stored in the processing tank 2 is formed on the bottom surface of the processing tank 2 as indicated by broken arrows in the figure. It is immersed vertically. This is performed by moving the transfer arms 3 a and 3 b perpendicularly to the bottom surface of the processing tank 2 and from the top surface to the bottom surface of the processing tank 2.

  Then, as shown in FIG. 2A, the transfer arms 3 a and 3 b move in opposite directions perpendicular to the bottom surface of the processing tank 2. Specifically, the transfer arm 3 a holding the semiconductor substrate 6 moves perpendicularly to the bottom surface of the processing tank 2 and from the bottom surface of the processing tank 2 toward the top surface. The transfer arm 3 b holding the semiconductor substrate 6 moves perpendicularly to the bottom surface of the processing tank 2 and from the top surface to the bottom surface of the processing tank 2.

  As a result, the semiconductor substrate 6 held by the transfer arms 3a and 3b is rotated about 45 degrees in the direction indicated by the solid line arrow in FIG. 2A due to the movement of the transfer arms 3a and 3b. The amount of movement of the transfer arms 3a and 3b is determined by the diameter of the semiconductor substrate 6 and the rotation angle.

  Hereinafter, an example of a method for determining the movement amount of the transfer arms 3a and 3b will be described.

  For example, when the diameter of the semiconductor substrate 6 is 200 mm, the circumference of the semiconductor substrate 6 is 200 mm × 3.14 = 628 mm. In order to rotate the semiconductor substrate 6 by 180 degrees, it is necessary to rotate the semiconductor substrate 6 by 314 mm, which is a half of the circumference (360 degrees) of the semiconductor substrate 6. Similarly, in order to rotate the semiconductor substrate 6 by 90 degrees, it is necessary to rotate it by 157 mm, and in order to rotate the semiconductor substrate 6 by 45 degrees, it is necessary to rotate by 78.5 mm.

  Since the substrate holding surfaces of the transfer arms 3a and 3b have an arc shape, the movement angle of the transfer arms 3a and 3b is slightly smaller than the calculated value described above. However, the amount of movement of the transfer arms 3a and 3b can be adjusted arbitrarily, so that there is no problem.

  Next, as shown in FIG. 2B, the transfer arms 3 a and 3 b move perpendicular to the bottom surface of the processing tank 2 and from the top surface to the bottom surface of the processing tank 2. Then, the transfer arms 3a and 3b move to a position where the semiconductor substrate 6 held by the transfer arms 3a and 3b can be stably supported by the guides 4a and 4b perpendicularly to the bottom surface of the processing tank 2.

  Then, as shown in FIG. 2C, the transfer arms 3 a and 3 b move away from the semiconductor substrate 6 with respect to the direction parallel to the bottom surface of the processing tank 2 and are separated from the semiconductor substrate 6. Since the semiconductor substrate 6 is supported by the guides 4a and 4b, a state perpendicular to the bottom surface of the processing tank 2 is maintained.

  Then, as shown in FIG. 2D, the transfer arms 3a and 3b separated from the semiconductor substrate 6 move in the direction opposite to the direction moved in FIG. Specifically, the transfer arm 3 a moves perpendicularly to the bottom surface of the processing tank 2 and moves from the top surface to the bottom surface of the processing tank 2. Further, the transfer arm 3 b moves perpendicularly to the bottom surface of the processing tank 2 and moves from the bottom surface to the top surface of the processing tank 2. As a result, the positions of the transfer arms 3 a and 3 b are located at the same distance from the bottom surface of the processing tank 2.

  Then, as shown in FIG. 2 (e), the transfer arms 3 a and 3 b move toward the semiconductor substrate 6 with respect to the direction parallel to the bottom surface of the processing tank 2 to hold the semiconductor substrate 6 again.

  Then, as shown in FIG. 2 (f), the semiconductor substrate 6 held by the transfer arms 3 a and 3 b is moved perpendicularly to the bottom surface of the processing tank 2 and from the bottom surface to the top surface of the processing tank 2. .

  Then, as shown in FIG. 2 (g), the transfer arms 3 a and 3 b move in the opposite directions perpendicular to the bottom surface of the processing tank 2, as in FIG. Specifically, the transfer arm 3 a holding the semiconductor substrate 6 moves perpendicularly to the bottom surface of the processing tank 2 and from the bottom surface of the processing tank 2 toward the top surface. The transfer arm 3 b holding the semiconductor substrate 6 moves perpendicularly to the bottom surface of the processing tank 2 and from the top surface to the bottom surface of the processing tank 2.

  As a result, the semiconductor substrate 6 held by the transfer arms 3a and 3b is rotated about 45 degrees in the direction indicated by the solid line arrow in FIG. As a result, the semiconductor substrate 6 rotates about 90 degrees from the position where the semiconductor substrate 6 is first immersed in the chemical solution stored in the processing tank 2.

  Then, by repeating the operations of FIG. 2B to FIG. 2G described above twice, the semiconductor substrate 6 is moved approximately from the position where the semiconductor substrate 6 is first immersed in the chemical solution stored in the processing bath 2. It will rotate 180 degrees.

As shown in FIG. 2 (h), the semiconductor substrate 6 rotated about 180 degrees is held at both ends by the transfer arms 3a and 3b, and is carried out from the inside of the processing tank 2 perpendicular to the bottom surface of the processing tank 2. The This is performed by moving the transfer arms 3 a and 3 b perpendicularly to the bottom surface of the processing tank 2 and from the bottom surface of the processing tank 2 toward the top surface. Then, the drying means 5 injects N ₂ gas toward the semiconductor substrate 6 and blows away the chemical remaining on the semiconductor substrate 6 carried out of the processing tank 2 as indicated by solid arrows in the drawing. ,dry.

  If the chemical solution for etching remains on the semiconductor substrate 6, the etching proceeds even after the semiconductor substrate 6 is unloaded from the processing tank 2. Therefore, when the semiconductor substrate 6 is unloaded from the processing tank 2, the drying unit 5 dries the semiconductor substrate 6, thereby preventing the etching from proceeding.

  As described above, the position of the semiconductor substrate 6 etched by the wet etching method of the present embodiment when it is carried into the processing tank 2 and the position when it is carried out of the processing tank 2 are rotated by 180 degrees. is doing. Therefore, when the semiconductor substrate 6 is carried into the processing bath 2, the semiconductor substrate 6 is immersed in the chemical solution in the order of position c, position b, and position a on the substrate (see FIG. 1). When the semiconductor substrate 6 is unloaded from the processing tank 2, the semiconductor substrate 6 is taken out from the chemical solution in the order of position c, position b, and position a on the substrate (see FIG. 2A).

  FIG. 3 compares the relationship between the etching amount and the positions a to c on the semiconductor substrate 106 etched by the conventional wet etching apparatus 101 and the semiconductor substrate 6 etched using the wet etching apparatus 1 of the present embodiment. It is a graph.

  As shown in FIG. 3, when etching is performed by the conventional wet etching apparatus 101, the order in which the semiconductor substrate 106 is immersed in the chemical stored in the processing tank 102, that is, the positions c, b, and a on the substrate. In sequence, the etching amount decreases on the surface of the semiconductor substrate 106. However, the semiconductor substrate 6 that has been subjected to the wet etching method of the present embodiment using the wet etching apparatus 1 of the present embodiment, regardless of the order in which the semiconductor substrate 6 is immersed in the chemical solution stored in the processing bath 2, The etching amount is uniform on the surface of the semiconductor substrate 6.

  Thus, by rotating the position of the semiconductor substrate 6 when being carried into the processing tank 2 and the position of the semiconductor substrate 6 when being carried out from the processing tank 2 on the surface of the semiconductor substrate 6 The immersion time in each of the parts becomes uniform. For this reason, the etching amount in each part on the surface of the semiconductor substrate 6 is less uniform and substantially uniform.

  The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims. That is, embodiments obtained by combining technical means appropriately changed within the scope of the claims are also included in the technical scope of the present invention.

  The wet etching apparatus and wet etching method of the present invention are suitably used for etching a semiconductor substrate.

It is a front view which shows schematic structure in one Embodiment of the wet etching apparatus of this invention at the time of board | substrate carrying-in. (A)-(h) is a front view which shows the wet etching method using the said wet etching apparatus. It is the graph which showed the relationship between the position on the board | substrate and the etching amount in the conventional wet etching apparatus and the said wet etching apparatus. It is a front view which shows schematic structure of the conventional wet etching apparatus. It is sectional drawing of the board | substrate which performed the wet etching using the conventional wet etching apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wet etching apparatus 2 Processing tank 3a * 3b Transfer arm (transfer member)
4a, 4b Guide (holding member)
5 Drying means 6 Semiconductor substrate

Claims (7)

A processing tank that can accommodate a substrate therein and stores a chemical for etching;
A transport member for transporting the substrate to the processing tank;
The transport member has a substrate holding part for holding the substrate,
A wet etching apparatus, wherein the substrate holding unit rotates the substrate while holding the substrate. The conveying member is a pair of members parallel to each other,
2. The wet etching apparatus according to claim 1, wherein the transfer member moves in opposite directions while holding the substrate, thereby rotating the substrate about the center of the substrate as a rotation axis. The pair of transport members release the substrate holding by moving the substrate holding part in a direction in which they are separated from each other,
3. The wet etching according to claim 2, wherein a holding member for holding the state of the substrate when the holding of the substrate of the transport member is released is provided inside the processing tank. apparatus.   The wet etching apparatus according to claim 1, further comprising a drying unit for drying the substrate carried out of the processing tank.   2. The substrate holding portion has a substrate holding surface having an arc-shaped cross section perpendicular to the bottom surface of the processing tank, and the arc radius of the substrate holding surface is larger than the radius of the substrate. The wet etching apparatus described in 1. A wet etching method for etching a substrate surface by immersing the substrate in a chemical solution for etching stored in a processing tank,
A wet etching method characterized by holding the substrate, carrying the substrate into the processing bath, reversing the substrate with the center of the substrate as a rotation axis, and carrying the substrate out of the processing bath. . The wet etching method according to claim 6, wherein a portion of the substrate carried out of the processing bath is sequentially dried from a chemical stored in the processing bath.

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