JP2007207792A - Planarization method of semiconductor substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a planarization method of a substrate which can increase productivity per unit time of an extremely thin semiconductor substrate with no warping by reducing a use amount of a protection adhesive tape by half when planarizing the semiconductor substrate. <P>SOLUTION: A pair of semiconductor substrates 2 are bonded at their the electronic circuit planes using a warm water soluble adhesive 3 to form a semiconductor substrate/the warm water soluble adhesive/a semiconductor substrate laminate 1. Front and rear faces of the laminate 1 are ground, washed, polished, and washed. Thereafter, the planarized laminate 1 is dipped in warm water at 60-90°C, and the warm water soluble adhesive 3 is dissolved to separate the laminate 1 into two extremely thin semiconductor substrates 2 each having a thickness of 20-50 μm. Instead of the warm water soluble adhesive 3, an adhesive 3 which disappears by heating may be used, and the polished and ground laminate 1 is heated to 150-170°C to be separated into the two extremely thin semiconductor substrates 2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for polishing a ground surface of a thinned semiconductor substrate by grinding the substrate surface of a semiconductor substrate having an electronic circuit provided on the substrate surface, and has a thickness of 20 to 20 that exhibits a mirror surface free from grinding flaws on the substrate surface. The object is to obtain a 50 μm semiconductor substrate.

As next-generation semiconductor substrates, semiconductor substrates having a thickness of 20 to 50 μm and a diameter of 300 to 450 mm are desired. When comparing a conventional semiconductor substrate having a thickness of 150 to 750 μm and a diameter of 200 to 300 mm with a next generation semiconductor substrate having a thickness of 80 to 120 μm, the next generation semiconductor substrate is extremely thin and has a large diameter, so that electrons are formed on the silicon substrate surface. A semiconductor substrate provided with a circuit has a property to bend, and when the back surface of the semiconductor substrate is ground and the ground surface is polished, the electronic circuit surface of the semiconductor substrate is exposed to a photocurable releasable adhesive tape (photocurable foaming). Protective stripping adhesive tape or UV radiation curable stripping adhesive tape) and protecting it with a light-impermeable aluminum plate or ceramic plate, or a transparent transparent glass plate or polycarbonate. -The electronic circuit surface is bonded to a support plate such as a bonnet resin plate, the opposite silicon substrate surface is ground back, and then the ground surface is polished or etched to mirror the ground surface. After that, the illuminance is adjusted so that the irradiation intensity becomes 40 mW / cm ^2, and the peeling adhesive tape is peeled off from the semiconductor substrate surface by irradiating from the peeling adhesive tape side for 2 minutes, and the thickness is 80 to 120 μm. (For example, refer to Patent Document 1).

  Also, a laminate in which a light-transmitting support plate having a thickness of 0.5 to 3 mm is laminated on one side of a semiconductor substrate via an adhesive containing a heat extinguishing resin obtained by crosslinking a polyoxyalkylene resin having a crosslinkable silyl group. After polishing the semiconductor substrate surface of this laminate, the semiconductor substrate was heated to 150 to 170 ° C. to extinguish the adhesive and polished from the light transmissive support plate to a thickness of 20 to 80 μm. A method for planarizing a semiconductor substrate to be peeled has also been proposed (see, for example, Patent Document 2).

  Furthermore, although the size of the substrate is small, two quartz wafers are bonded directly with a photo-curing adhesive or with a silicon or olefin adhesive with a dummy plate in between, and light is irradiated to cure the adhesive. A laminated wafer is formed, and both surfaces of the laminated wafer are polished to a desired thickness using a conventional carrier and polishing processing apparatus, and then the laminated wafer after polishing is immersed in a stripping solution and photocurable. There has also been proposed a double-side polishing method in which an agent is dissolved and separated into individual quartz wafers having a thickness of 10 to 25 μm (see, for example, Patent Document 3).

US Pat. No. 6,933,0023 JP 2004-186263 A JP 2001-274128 A

  When polishing a semiconductor substrate having a next generation thickness of 20 to 50 μm and a diameter of 300 to 450 mm, the deflection becomes larger than that of the next generation semiconductor substrate having a thickness of 80 to 120 μm. Compared with the grinding method and the polishing method described in Patent Document 1, the method of performing double-side polishing on the laminated crystal wafer described in Patent Document 3 has an advantage that the amount of the peelable adhesive tape used can be reduced by half. However, it is good when the substrate is a transparent light-transmitting material such as glass or quartz, but when it is an opaque non-light-transmitting substrate such as a silicon substrate or a GaAs substrate, an electronic circuit is provided on the substrate surface. When a laminated semiconductor substrate is laminated and ground or polished, the silicon substrate is opaque or translucent. Therefore, a photo-curing resin adhesive (including an ultraviolet irradiation curable resin pressure-sensitive adhesive) is used for laminating or peeling. ) Is hard to cure by irradiating with ultraviolet rays and is not practical.

  The present inventors use a semiconductor substrate used for polishing in the next step as a support, and dissolve in hot water at 60 to 90 ° C. used as a pressure-sensitive label pressure-sensitive adhesive for glass hollow bottles as an adhesive. The use of a hot water-soluble adhesive is based on the idea that hot water penetrates into the cutting groove on the electronic circuit surface of the semiconductor substrate, and the dissolution of the hot water-soluble adhesive proceeds, and the semiconductor substrate of the present invention is made extremely thin and flat. The method has been reached.

  In addition, the semiconductor substrate used for the polishing process in the next step is used as a support, and even if the heat extinguishing resin adhesive described in Patent Document 2 is used as an adhesive, the semiconductor substrate can be made extremely thin and flat. I found out that I can do it.

  According to the first aspect of the present invention, a semiconductor substrate / hot water soluble adhesive / semiconductor substrate is laminated by bonding the electronic circuit surfaces of a pair of semiconductor substrates using a hot water soluble adhesive that dissolves in hot water at 60 to 90 ° C. After the substrate surface on the front and back surfaces of this laminate is ground and cleaned, the ground surface is then polished to mirror the ground surface, and the polished surface is cleaned and then ground and polished. A method for flattening a semiconductor substrate, characterized in that the substrate is immersed in warm water at 60 to 90 ° C. to dissolve the hot water-soluble adhesive and separated into two semiconductor substrates having a thickness of 20 to 50 μm. It is.

  The invention of claim 2 forms a semiconductor substrate / heat extinguishing resin adhesive / semiconductor substrate laminate by bonding electronic circuit surfaces of a pair of semiconductor substrates using an adhesive containing a heat extinguishing resin. Then, after grinding and cleaning the substrate surfaces on the front and back surfaces of the laminate, the grinding surface is polished to make the ground surface mirror, and after polishing the polished surface, the ground and polished laminate is 150 to The present invention provides a method for planarizing a semiconductor substrate, characterized in that the heat extinguishing resin adhesive is extinguished by heating to 170 ° C. and separated into two semiconductor substrates having a thickness of 20 to 50 μm.

  According to a third aspect of the present invention, in the method for planarizing a semiconductor substrate according to the first or second aspect, the polishing process of the substrate surface of the multilayer body is performed by adsorbing the multilayer body to a chuck supported by a rotating shaft, Polishing using a polishing pad having a diameter of 1.15 to 1.3 times the substrate diameter, covering the entire substrate surface of the laminate, and swinging the polishing pad around 50 to 75 mm toward the center of the semiconductor substrate It is characterized by performing.

  A semiconductor substrate / hot water soluble adhesive / semiconductor substrate laminate is formed by bonding electronic circuit surfaces of a semiconductor substrate having a diameter of 300 to 450 mm and a thickness of 100 to 770 μm using a hot water soluble adhesive. Since the thickness of the substrate can be reduced by grinding and polishing the front and back surfaces of the laminate, the amount of the semiconductor substrate protective adhesive tape used is halved. Further, since the other semiconductor substrate serves as a support, the support becomes unnecessary. Furthermore, since a hot water-soluble adhesive is used, the semiconductor substrate is thinned as compared with a conventional method in which a thinned semiconductor substrate is peeled off using another peeling adhesive tape. Since no stress is applied during the peeling, there is no chance of damage to the ultrathin semiconductor substrate. Moreover, the thermal stress at the time of processing is released from the ultrathin semiconductor substrate by the annealing effect by the hot water, and an ultrathin semiconductor substrate with small warpage can be obtained.

  A semiconductor substrate / heat extinguishing resin adhesive / semiconductor substrate laminate is formed by adhering electronic circuit surfaces of a semiconductor substrate having a diameter of 300 to 450 mm and a thickness of 100 to 770 μm using a heat extinguishing resin adhesive, Thereafter, the front and back surfaces of the laminate can be ground and polished to reduce the thickness of the substrate, so the amount of the semiconductor substrate protective adhesive tape used is halved. Further, since the other semiconductor substrate serves as a support, the support becomes unnecessary. Furthermore, since a heat extinguishing resin adhesive is used, the semiconductor is thinned as compared with the conventional method in which the thinned semiconductor substrate is peeled off using another peeling adhesive tape. Since no stress is applied to the substrate during peeling, there is no opportunity for damage to the ultrathin semiconductor substrate. In addition, since the heat extinguishing resin adhesive is heated to 150 to 170 ° C. to be extinguished, an annealing effect by this heating releases thermal stress during processing from the ultrathin semiconductor substrate, and the ultrathin semiconductor substrate with small warpage. Can be obtained.

  Using a polishing pad having a diameter of 1.15 to 1.3 times the diameter of the semiconductor substrate, covering the entire substrate surface of the laminate, and swinging the polishing pad about 50 to 75 mm toward the center of the semiconductor substrate By polishing, an ultrathin semiconductor substrate without warping can be obtained.

Hereinafter, the present invention will be described in more detail with reference to the drawings.
1 is a sectional view of a semiconductor substrate / adhesive / semiconductor substrate laminate, FIG. 2 is a plan view of a semiconductor substrate thinning apparatus, FIG. 3 is a front view of the laminate polishing apparatus, and FIG. 4 is a laminate. It is sectional drawing of this hot water peeling apparatus.

  In FIG. 1, reference numeral 1 denotes a laminated body before being thinned, and this laminated body adopts a structure of semiconductor substrate 2 / warm water soluble adhesive 3 / semiconductor substrate 2. In this laminate 1, a hot water-soluble adhesive that dissolves in hot water of 60 to 90 ° C. is applied to the electronic circuit surface 2 a of the semiconductor substrate 2, and the cutting stream 2 b is also filled with the hot water-soluble adhesive 3. The semiconductor substrate pair of hot water-soluble adhesive surfaces are bonded together to form a laminated body 1 having a structure of semiconductor substrate / warm water-soluble adhesive / semiconductor substrate.

As the substrate of the semiconductor substrate 2 which circuit is applied to said surface, a silicon substrate, GaAs substrate, AlT i _C substrate, a sapphire substrate, a quartz substrate, a glass substrate or the like is used.

  The hot water-soluble adhesive (adhesive) 3 is, for example, an adhesive that dissolves in 30 to 120 seconds with hot water at 60 to 80 ° C. that is used in the hot water peeling label disclosed in JP-A-2002-140008. The dispersion type acrylic resin pressure-sensitive adhesive was treated with at least a granular starch or phosphate aqueous solution having an average particle size of 20 μm or less, preferably 15 μm or less, more preferably 10 μm or less having hot water solubility or swellability. 1 to 20% by mass, preferably 2 to 15% by mass, more preferably 3 to 10% by mass of colloidal or light calcium carbonate having an average particle diameter of 2 μm or less, preferably 1 μm or less, based on the solid content of the oligomer-adhesive The pressure-sensitive adhesive composition is preferably applied to the surface of the peelable film substrate so that it can be carried and used.

  When the particle size of the particulate starch exceeds 20 μm or the particle size of calcium carbonate exceeds 2 μm, the contact area with hot water is reduced, and the hot water responsiveness is lowered. If the blending amount of the particulate starch or calcium carbonate exceeds 20% by mass, the adhesive strength may be lost, and if it is less than 1% by mass, sufficient hot water peelability may not be obtained, which is not preferred.

  If only calcium carbonate is used, the amount of phosphate used is increased and the hygroscopicity of the adhesive layer is increased, so that the water resistance against cold water may be deteriorated. In such a case, the hot water peelability of the resin pressure-sensitive adhesive layer can be maintained by using the particulate starch and calcium carbonate in combination. When the above-mentioned particulate starch and calcium carbonate are used in combination, a pressure-sensitive adhesive containing 1 to 30% by weight, preferably 2 to 25% by weight, more preferably 3 to 20% by weight, based on the solid content of the pressure-sensitive adhesive. Use the composition. If the total amount of the particulate starch and calcium carbonate exceeds 30% by mass, the adhesive strength may be lost, and if it is less than 1% by mass, sufficient hot water peelability may not be obtained.

  Examples of the acrylic resin pressure sensitive adhesive include acrylic acid alkyl ester, methacrylic acid alkyl ester, hydroxyl ethyl acrylate, hydroxyl ethyl methacrylate, hydroxyl butyl methacrylate, hydroxyl isopropyl acrylate, hydroxyl isopropyl. (Meth) acrylic monomers such as methacrylate and hydroxylbutyl methacrylate, amide monomers such as acrylonitrile, acrylamide and methacrylamide, N-alkoxy substituted products of the amide monomers, N-methylo -Styrene monomers such as styrene, vinyltoluene, α-methylstyrene, divinylbenzene, allylic monomers such as allylglycidyl ether, triallyl isocyanurate, vinyl acetate, N-vinyl Pyrrolidone One or more monomers having a polymerizable double bond such as α-methyl / N-vinylpyrrolidone, and acrylic acid, methacrylic acid, maleic acid, maleic anhydride, fumaric acid, itacone having a carboxyl group Examples thereof include copolymers with one or more unsaturated carboxylic acids such as acids and the like.

  The dispersion type acrylic resin pressure-sensitive adhesive is in the form of an aqueous emulsion of the above acrylic resin pressure-sensitive adhesive.

  Particulate starch having an average particle diameter of 20 μm or less having hot water solubility or swelling property is gelatinized by hot water of 60 to 80 ° C., and becomes a filler having water solubility or water swelling property.

  The particulate starch is mainly composed of amylose and amylopectin, and amylose exhibits hot water solubility and amylopectin having a network structure exhibits hot water swelling. Particulate starch includes unmodified, modified starch such as etherified starch, esterified starch, graft copolymerized starch, pregelatinized starch, roasted dextrin, etc. Since some are included, it is necessary to use those appropriately modified so that the dissolution temperature is about 60 ° C. or higher.

  Among the alpha starches, rice starch derived from rice has a small polygonal structure with an average particle size of about 3 to 6 μm, so it has a large surface area, a large contact area with hot water, and a response to hot water. Since it becomes high, it can be preferably used. In addition, since the gelatinization temperature of unprocessed rice starch is too high at about 80 ° C., it is preferable that rice starch is partially etherified or esterified as necessary to lower the gelatinization temperature.

  The compounding amount of the particulate starch is required to be kept to the minimum necessary to sufficiently ensure the required adhesive force because the adhesive force decreases according to the increase of the compounding amount due to the filling effect. Specifically, for example, the amount of particulate starch blended rapidly from 10% by mass to the solid content of the adhesive, and the adhesive strength begins to rapidly decrease. At 12% by mass, the adhesive strength and tack become less than half, and 20% by mass. Exceeding the adhesive strength is almost lost.

  Calcium carbonate treated with an aqueous phosphate solution liberates calcium ions with warm water, causing acid groups such as carboxylic acids in the adhesive component to crosslink with metal salts, hardening the adhesive film and reducing peel strength. Let In order to improve the hot water reactivity, calcium carbonate having a small particle size and a large surface area can be preferably used.

  Calcium carbonate includes those treated with fatty acids, resin acids, and rosin acids, and those treated with carboxylic acid coupling agents such as carboxylated polybutadiene and carboxylated polyisoprene. Since the responsiveness becomes small, the solubility effect cannot be expected.

  Phosphate such as sodium hexametaphosphate has an effect of inactivating calcium ions, and is also used as a softener for hard water, for example. When this calcium carbonate dispersion is directly added to the dispersion type acrylic resin adhesive, the free calcium ions may react with the acidic groups of the adhesive to generate aggregates. Accordingly, a phosphate such as sodium hexametaphosphate is dissolved in water in which calcium carbonate is dispersed in advance, and even if calcium ions are dissolved from the added calcium carbonate, they are completely sealed with a phosphate such as sodium hexametaphosphate. It needs to be stopped. If the calcium carbonate dispersion liquid in which calcium ions are sealed is added to the dispersion type acrylic pressure-sensitive adhesive, aggregates are not generated.

  The solubility of calcium carbonate in water is 1.4 to 1.5 mg in 100 g of water at 25 ° C. and 1.8 mg at 75 ° C., so that it is necessary for calcium ion sealing above the solubility of calcium carbonate at room temperature. If only a phosphate such as sodium hexametaphosphate is added, calcium ions that cannot be sealed with phosphate such as sodium hexametaphosphate start to be released due to the difference in solubility when immersed in warm water. If calcium ions that cannot be sealed by liberation with hot water are liberated, acidic groups such as carboxylic acid in the acrylic resin adhesive component and metal salt cross-linking are caused to harden the adhesive film and reduce the peel strength. be able to.

  Examples of phosphates other than sodium hexametaphosphate include sodium tripolyphosphate, sodium tetrapolyphosphate, and sodium pyrophosphate.

  In order to bring out the functions of the above-mentioned particulate starch and calcium carbonate well, 3-4 components of 2-ethylhexyl acrylate / butyl acrylate / vinyl acetate / acrylic acid were copolymerized among the above acrylic resin adhesives. Acrylic resin adhesive is preferred. Moreover, what mix | blended the vinyl acetate type resin adhesive dispersion with the all-acrylic resin adhesive dispersion of 2-ethylhexyl acrylate and butyl acrylate / acrylic acid is also preferable.

  If necessary, the acrylic resin pressure-sensitive adhesive composition 3 is further added with a fungicide, a preservative, a dispersant, a pH adjuster, a stabilizer, a plasticizer, an antifoaming agent, and other desired additives. be able to.

  After the hot water soluble acrylic resin pressure-sensitive adhesive composition 3 is applied in advance to the surface of the electronic circuit 2a of the semiconductor substrate 2, and the surface 2b is sufficiently filled with the hot water soluble acrylic resin pressure sensitive adhesive composition 3 The electronic circuit of the semiconductor substrate 2 is made of an adhesive tape obtained by applying the hot water-soluble acrylic resin pressure-sensitive adhesive composition 3 to a biaxially stretched polyethylene terephthalate film base or a biaxially stretched polypropylene polyethylene terephthalate film base. The laminated body 1 may be formed by protecting the 2a surface, then peeling off the film base material, and pasting it on the front and back surfaces of the support plate 3 with the silicon substrate 2c surface of the semiconductor substrate 2 facing outside. As the hot water soluble adhesive, 60 ℃ hot water soluble adhesive from Sumitomo 3M Co., Ltd. under the grade name of S414, from Nikka Seiko Co., Ltd. under the Skybond product name, from Kaken Tech Co., Ltd. It is sold under the trade name of Ecolobara CT-1888A / B, which is soluble in hot water at 90 ° C. When the semiconductor substrate to be planarized is translucent, an 80 ° C. hot water-soluble photocurable acrylic resin adhesive from Sakamoto Yakuhin Kogyo Co., Ltd. or Toppan Moore Co., Ltd. can be used. .

  The thickness of the warm water-soluble acrylic resin pressure-sensitive adhesive composition layer 3 is 5 to 25 μm, and preferably 1 to 5 μm higher than the total value of the depth of the strip groove 2b and the height of the circuit surface. The pressure of the adhesive is preferably 20 to 100 g / 25 mm width at 25 ° C.

  The hot water soluble acrylic resin pressure-sensitive adhesive composition 3 may be replaced with the heat extinguishing resin adhesive 3. In the present specification, the heat extinguishing resin means a resin that decomposes into a gas by heating, or decomposes and vaporizes to lose a solid shape. The composition of this heat extinguishing resin adhesive 3 is disclosed in Patent Document 2, and can be purchased as SELFA BG series from Sekisui Chemical Co., Ltd. The heat stripper is exhibited at the booth of Sekisui Chemical Co., Ltd. at the semiconductor package exhibition held on January 23, 2006, and is available as a part of the ultra-thin semiconductor substrate support system.

  Examples of the heat extinguishing resin adhesive include polymethylenemalonic acid diester, polybutylene, nitrocellulose, α-methylstyrene polymer, propylene carbonate polymer, poly (meth) acrylic acid alkyl ester, carboxylic acid dihydrazide and diisocyanate. Copolymers, peroxides of these polymers, etc., and plasticizers such as dibutyl phthalate and dioctyl phthalate, and softeners such as xylene oil, terpene oil, and paraffin wax as necessary. The thing etc. which provided the adhesiveness are known. Polybutene and polylauryl methacrylate can also be used as the heat extinguishing resin.

  In order to rapidly extinguish these heat extinguishing resins, a resin obtained by crosslinking a polyoxyalkylene resin having a crosslinkable silyl group can be blended and heated to 150 to 170 ° C. to rapidly extinguish.

  Examples of the polyoxyalkylene resin include polyoxypropylene resin, polyoxyethylene resin, polyoxytetramethylene resin, and the like. Above all, if the polyoxypropylene resin is 50% by weight or more and the mixed resin contains a polyoxyethylene resin or a polyoxytetramethylene resin, by adjusting the mixing ratio of the resin, the temperature to disappear and the temperature to disappear It is preferable because time can be adjusted.

  Examples of the crosslinkable silyl group include an oxime silyl group, an alkenyloxy silyl group, an acetoxy silyl group, a halogeno silyl group, a vinyl silyl group, and a silanol group. Among these, a polyoxyalkylene resin having an alkoxysilyl group at the terminal is preferable because it becomes a rubber-like crosslinked resin having excellent elasticity.

  In order to crosslink the polyoxyalkylene resin having a crosslinkable silyl group, it is preferable to use a photoreaction catalyst. Thereby, a polyoxyalkylene resin composition can be bridge | crosslinked and hardened by irradiating light, such as visible light, an ultraviolet-ray, and an electron beam (henceforth light irradiation). Of these, carboxylic acid anhydrides, carboxylic acid imides, and diacylphosphine oxides are preferred because of their high photoreactivity and excellent solubility in polyoxyalkylene resins having a crosslinkable silyl group. Such a photoreaction catalyst may be used independently and may use 2 or more types together.

  Examples of the photoreaction catalyst include acetic anhydride, propionic anhydride, butyric anhydride, isobutyric anhydride, valeric anhydride, 2-methylbutyric anhydride, trimethylacetic anhydride, hexanoic anhydride, Heptanoic acid anhydride, decanoic acid anhydride, lauric acid anhydride, myristic acid anhydride, palmitic acid anhydride, stearyl acid anhydride, docosanoic acid anhydride, crotonic acid anhydride, acrylic acid anhydride, methacrylic acid anhydride, Oleic anhydride, linoleic anhydride, chloroacetic anhydride, iodoacetic anhydride, dichloroacetic anhydride, trifluoroacetic anhydride, chlorodifluoroacetic anhydride, trichloroacetic anhydride, pentafluoropropionic anhydride, hepta Fluorobutyric anhydride, succinic anhydride, methyl succinic anhydride, 2,2-dimethylsuccinic acid Anhydride, isobutyl succinic anhydride, 1,2-cyclohexanedicarboxylic anhydride, hexahydro-4-methylphthalic anhydride, itaconic anhydride, 1,2,3,6-tetrahydrophthalic anhydride, 3,4 , 5,6-tetrahydrophthalic anhydride, maleic anhydride, 2-methylmaleic anhydride, 2,3-dimethylmaleic anhydride, 1-cyclopentene-1,2-dicarboxylic anhydride, glutaric anhydride 1-naphthyl acetic anhydride, benzoic anhydride, phenyl succinic anhydride, phenyl maleic anhydride, 2,3-diphenyl maleic anhydride, phthalic anhydride, 4-methylphthalic anhydride, 3, 3 ′, 4,4′-benzophenonetetracarboxylic dianhydride, 4,4 ′-(hexafluoropropylidene) diphthalic anhydride, 1,2,4 5-benzenetetracarboxylic anhydride, 1,8-naphthalenedicarboxylic anhydride, 1,4,5,8-naphthalenetetracarboxylic anhydride, etc .; maleic anhydride and a compound having a radical polymerizable double bond Examples of the copolymer include a copolymer of maleic anhydride and (meth) acrylate, a copolymer of maleic anhydride and styrene, and a copolymer of maleic anhydride and vinyl ether. Among these, commercially available products include, for example, Adeka Hardner EH-700, Adeka Hardner EH-703, Adeka Hardner EH-705A manufactured by Asahi Denka Co., Ltd., Rikacid TH, Ricacid HT-1, Ricacid HH, manufactured by Shin Nippon Chemical Co. RIKACID MH-700, RIKACID MH-700H, RIKACID MH, RIKACID SH, RIKARESIN TMEG; Hitachi Chemical HN-5000, HN-2000; A Sumicure MS manufactured by Sumitomo Chemical Co., Ltd.

  Moreover, as a photoreaction catalyst, for example, succinimide, N-methylsuccinimide, α, α-dimethyl-β-methylsuccinimide, α-methyl-α-propylsuccinimide, maleimide, N-methylmaleimide, N -Ethylmaleimide, N-propylmaleimide, N-tert-butylmaleimide, N-laurylmaleimide, N-cyclohexylmaleimide, N-phenylmaleimide, N- (2-chlorophenyl) maleimide, N-benzylmaleimide, N- (1- Pyrenyl) maleimide, 3-methyl-N-phenylmaleimide, N, N′-1,2-phenylenedimaleimide, N, N′-1,3-phenylenedimaleimide, N, N′-1,4-phenylenediene Maleimide, N, N ′-(4-methyl-1,3-phenylene) bismaleimide, 1,1 '-(Methylenedi-1,4-phenylene) bismaleimide, phthalimide, N-methylphthalimide, N-ethylphthalimide, N-propylphthalimide, N-phenylphthalimide, N-benzylphthalimide, pyromellitic diimide, bis (2, 6-dimethoxybenzoyl) -2,4,4-trimethyl-pentylphosphine oxide, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, 2,4-pentanedione, 3-methyl-2,4 -Pentanedione, 3-ethyl-2,4-pentanedione, 3-chloro-2,4-pentanedione, 1,1,1-trifluoro-2,4-pentanedione, 1,1,1,5 5,5-hexafluoro-2,4-pentanedione, 2,2,6,6-tetramethyl-3,5 Diketones such as heptanedione, 1-benzoylacetone, dibenzoylmethane; polycarboxylic acid esters such as dimethylmalonate, diethylmalonate, dimethylmethylmalonate, tetraethyl1,1,2,2-ethanetetracarboxylic acid; And α-carbonyl-acetic acid esters such as methyl acetylacetonate, ethylacetylacetonate, and methylpropionyl acetate. Of these, diacylphosphine oxide and its derivatives are preferred because the residue after extinction is extremely small.

  The preferred amount of the photoreaction catalyst used is 0.01 parts by weight with respect to 100 parts by weight of the polyoxyalkylene resin having a crosslinkable silyl group, and the preferred upper limit is 30 parts by weight. When the amount is less than 0.01 part by weight, the photoreactivity may not be exhibited. When the amount exceeds 30 parts by weight, the light transmittance of the polyoxyalkylene resin composition decreases, and only the surface is irradiated even when irradiated with light. May be crosslinked and cured, and the deep part may not be crosslinked or cured. A more preferred lower limit is 0.1 parts by weight, and a more preferred lower limit is 20 parts by weight.

  When the polyoxyalkylene resin having a crosslinkable silyl group is crosslinked, a sensitizer may be used in combination. By using a sensitizer in combination, the photoreactivity can be improved, the light irradiation time can be shortened, the light irradiation energy can be reduced, and the surface can be uniformly crosslinked and cured from the surface to the deep part. Examples of the sensitizer include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, methoxyacetophenone, and 2,2-dimethoxy- Acetophenone derivative compounds such as 2-phenylacetophenone; benzoin ether compounds such as benzoin ethyl ether and benzoin propyl ether; ketal derivative compounds such as benzyldimethyl ketal; halogenated ketones; acyl phosphine oxides; acyl phosphonates; -1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one, 2-benzyl-2-N, N-dimethylamino-1- (4-morpholinophenyl) -1-butanone; bis ( 2,4,6-trimethylben Zoyl) -phenylphosphine oxide bis- (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentylphosphine oxide; bis (η5-cyclopentadienyl) -bis (pentafluorophenyl) -titanium, bis (Η5-cyclopentadienyl) -bis [2,6-difluoro-3- (1H-py-1-yl) phenyl] -titanium; anthracene, perylene, coronene, tetracene, benzanthracene, phenothiazine, flavin, acridine, Ketocoumarin, thioxanthone derivatives, benzophenone, acetophenone, 2-chlorothioxanthone, 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, isopropylthioxanthone, etc. It is done. These may be used independently and 2 or more types may be used together.

  The polyoxyalkylene resin having a crosslinkable silyl group may be used in combination with an alkylsilane compound or an alkoxysilane compound as necessary. Examples of the alkylsilane compound or alkoxysilane compound include dimethoxydimethylsilane, cyclohexyldimethoxymethylsilane, diethoxydimethylsilane, dimethoxymethyloctylsilane, diethoxymethylvinylsilane, chloromethyl (diisopropoxy) methylsilane, and dimethoxymethylphenylsilane. , Diethoxydiphenylsilane, trimethoxysilane, triethoxysilane, methyltrimethoxysilane, trimethoxypropylsilane, isobutyltrimethoxysilane, octyltrimethoxysilane, octadecyltrimethoxysilane, methyltriethoxysilane, ethyltriethoxysilane, isobutyl Triethoxysilane, Octyltriethoxysilane, Vinyltrimethoxysilane, Vinyltriethoxysilane , Allyltriethoxysilane, (3-chloropropyl) trimethoxysilane, chloromethyltriethoxysilane, tris (2-methoxyethoxy) vinylsilane, 3-glycidoxypropyltrimethoxysilane, diethoxy (3-glycidoxypropyl) ) Methylsilane, chlorotrimethoxysilane, chlorotriethoxysilane, chlorotris (1,3-dimethylbutoxy) -silane, dichlorodiethoxysilane, 3- (triethoxysilyl) -propionitrile, 4- (triethoxysilyl)- Butyronitrile, 3- (triethoxysilyl) -propyl isocyanate, 3- (triethoxysilyl) -propylthioisocyanate, phenyltrimethoxysilane, phenyltriethoxysilane, tetramethoxysilane, tetraethoxysilane , Tetrapropoxysilane, tetrabutoxysilane, 1,3,5,7-tetraethoxy-1,3,5,7-tetramethylcyclotetrasiloxane, 1,3,5,7-tetramethyl-1,3, 5,7-tetraproxycyclotetrasiloxane, 1,3,5,7-tetraisopropoxy-1,3,5,7-tetramethylcyclotetrasiloxane, 1,3,5,7-tetrabutoxy-1,3 , 5,7-tetramethylcyclotetrasiloxane, 1,3,5,7,9-pentaethoxy-1,3,5,7,9-pentamethylcyclopentasiloxane, octamethylcyclotetrasiloxane, decamethylcyclopenta Siloxane, dodecamethylcyclohexasiloxane, hexaphenylcyclotrisiloxane, octaphenylcyclotetrasiloxane, 1 , 3,5,7-tetramethylcyclotetrasiloxane, 1,3,5,7-tetramethyl-1,3,5,7-tetraphenylcyclotetrasiloxane, 1,1,3,3,5,5- Hexamethylcyclotrisilazane, 1,1,3,3,5,5,7,7-octamethylcyclotetrasilazane, 1,7-diacetoxyoctamethyltetrasiloxane, 1,7-dichlorooctamethyltetrasiloxane, 1 1,3,3,5,5-hexamethyl-1,5-dichlorotrisiloxane, 1,3-dichlorotetraisopropyldisiloxane, 1,3-diethoxytetramethyldisiloxane, 1,3-dimethoxytetramethyldi Siloxane, 1,1,3,3-tetramethyl-1,3-dichlorodisiloxane, 1,2-bis (methyldichlorosilyl) ethane, dia Toxidiphenylsilane, methyltris (ethylmethylketoxime) silane, methyltris (N, N-diethylaminoxy) silane, bis (ethylmethylketoxime) methylisopropoxysilane, bis (ethylmethylketoxime) ethoxymethylsilane, tris (1 -Methylvinyloxy) vinylsilane, methyltriisopropenoxysilane, ethyltriacetoxysilane, methyltriacetoxysilane, diacetoxydimethylsilane, triacetoxyvinylsilane, tetraacetoxysilane, diacetoxymethylphenylsilane, dimethoxyethylmethylketoxime methylsilane Etc.

  The ratio of the heat extinguishing resin in the adhesive is not particularly limited. When the heat extinguishing resin is the main component and occupies most of the adhesive, the adhesive can be extinguished by heating, and the support plate can be peeled off very easily. On the other hand, even when the content is such that the entire adhesive does not disappear, the gas generated by the decomposition of the heat extinguishing resin peels at least a part of the adhesive surface of the adhesive from the semiconductor wafer and reduces the adhesive strength. Therefore, the support plate can be easily peeled off.

In order for the gas generated by the decomposition of the heat extinguishing resin to peel off at least a part of the adhesive surface of the adhesive from the substrate surface of the semiconductor substrate and reduce the adhesive force, the adhesive is further stimulated. It is preferable to contain a crosslinkable resin component to be crosslinked. If the crosslinkable resin component is cross-linked by stimulating before decomposing the heat extinguishing resin and generating gas, the entire adhesive is cured and the gas generated by the decomposition of the heat extinguishing resin is more efficient. Gas can be released from the adhesive, and the support plate can be peeled off more easily.
Moreover, the ratio of the crosslinkable resin component that is cross-linked by the stimulus in the adhesive is not particularly limited, but the ratio of the crosslinkable resin component that is cross-linked by the stimulus is preferably 30% by weight or more. When the ratio of the crosslinkable resin component that is crosslinked by the stimulus is less than 30% by weight, the entire adhesive may not be sufficiently cured.

  The crosslinkable resin component that crosslinks upon stimulation is not particularly limited. For example, an acrylic acid alkyl ester-based and / or methacrylic acid alkyl ester-based polymerizable polymer having a radical polymerizable unsaturated bond in the molecule. And a radically polymerizable polyfunctional oligomer or monomer as a main component, and if necessary, a photocurable pressure-sensitive adhesive containing a photopolymerization initiator or a radically polymerizable unsaturated bond in the molecule A thermosetting pressure-sensitive adhesive comprising, as a main component, an acrylic acid alkyl ester-based and / or methacrylic acid alkyl ester-based polymerizable polymer and a radical polymerizable polyfunctional oligomer or monomer; Can be mentioned.

  Such a photo-curing pressure-sensitive adhesive or a thermosetting pressure-sensitive adhesive such as a thermosetting pressure-sensitive adhesive is polymerized and cured because the entire pressure-sensitive adhesive is uniformly and rapidly polymerized and cross-linked by irradiation or heating with light. The elastic modulus rises significantly due to, and the adhesive strength is greatly reduced. In addition, when gas is generated by decomposing a heat extinguishing resin in a hard cured product, most of the generated gas is released to the outside, and the released gas peels at least a part of the adhesion surface from the adherend. Reduce adhesion.

  The polymerizable polymer is prepared by, for example, previously synthesizing a (meth) acrylic polymer having a functional group in the molecule (hereinafter referred to as a functional group-containing (meth) acrylic polymer) and reacting with the functional group in the molecule. It can obtain by making it react with the compound (henceforth a functional group containing unsaturated compound) which has a functional group to perform and a radically polymerizable unsaturated bond.

  The functional group-containing (meth) acrylic polymer is an acrylic having an alkyl group usually in the range of 2 to 18 as a polymer having adhesiveness at room temperature, as in the case of a general (meth) acrylic polymer. By copolymerizing an acid alkyl ester and / or methacrylic acid alkyl ester as a main monomer, a functional group-containing monomer, and, if necessary, another modifying monomer copolymerizable therewith by a conventional method It is obtained. The weight average molecular weight of the functional group-containing (meth) acrylic polymer is usually about 200,000 to 2,000,000.

  Examples of the functional group-containing monomer include a carboxyl group-containing monomer such as acrylic acid and methacrylic acid; a hydroxyl group-containing monomer such as hydroxyethyl acrylate and hydroxyethyl methacrylate; and an epoxy group containing glycidyl acrylate and glycidyl methacrylate. Monomers; Isocyanate group-containing monomers such as isocyanate ethyl acrylate and isocyanate ethyl methacrylate; and amino group-containing monomers such as aminoethyl acrylate and aminoethyl methacrylate.

  Examples of other modifying monomers that can be copolymerized include various monomers used in general (meth) acrylic polymers such as vinyl acetate, acrylonitrile, and styrene.

  The functional group-containing unsaturated compound to be reacted with the functional group-containing (meth) acrylic polymer is the same as the functional group-containing monomer described above according to the functional group of the functional group-containing (meth) acrylic polymer. it can. For example, when the functional group of the functional group-containing (meth) acrylic polymer is a carboxyl group, an epoxy group-containing monomer or an isocyanate group-containing monomer is used, and when the functional group is a hydroxyl group, an isocyanate group-containing monomer is used. When the functional group is an epoxy group, a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide is used, and when the functional group is an amino group, an epoxy group-containing monomer is used.

  The polyfunctional oligomer or monomer preferably has a molecular weight of 10,000 or less, and more preferably has a molecular weight of 5000 or less so that the three-dimensional network of the pressure-sensitive adhesive layer can be efficiently formed by heating or light irradiation. And the number of radically polymerizable unsaturated bonds in the molecule is 2 to 20. As such more preferred polyfunctional oligomers or monomers, for example, trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate Or the above-mentioned methacrylates etc. are mentioned. Other examples include 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, and methacrylates similar to those described above. These polyfunctional oligomers or monomers may be used alone or in combination of two or more.

  Examples of the photopolymerization initiator include those activated by irradiation with light having a wavelength of 250 to 800 nm. Examples of such a photopolymerization initiator include acetophenone derivative compounds such as methoxyacetophenone. Benzoin ether compounds such as benzoin propyl ether and benzoin isobutyl ether; ketal derivative compounds such as benzyl dimethyl ketal and acetophenone diethyl ketal; phosphine oxide derivative compounds; bis (η5-cyclopentadienyl) titanocene derivative compounds, benzophenone, Michler's ketone Chlorothioxanthone, todecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl pro Examples thereof include photo radical polymerization initiators such as bread. These photoinitiators may be used independently and 2 or more types may be used together.

  Examples of the thermal polymerization initiator include those that decompose by heat and generate active radicals that initiate polymerization and curing, such as dicumyl peroxide, di-t-butyl peroxide, and t-butyl peroxybenzoale. , T-butyl hydroperoxide, benzoyl peroxide, cumene hydroperoxide, diisopropylbenzene hydroperoxide, paramentane hydroperoxide, di-t-butyl peroxide and the like. Among these, cumene hydroperoxide, paramentane hydroperoxide, di-t-butyl peroxide, and the like are preferable because of their high thermal decomposition temperature. Although it does not specifically limit as what is marketed among these thermal-polymerization initiators, For example, perbutyl D, perbutyl H, perbutyl P, permenta H (all are the products made from NOF) etc. are suitable. These thermal polymerization initiators may be used independently and 2 or more types may be used together.

  FIG. 2 shows a layout of a semiconductor substrate flattening device 10 and a hot water peeling device 100 for grinding and polishing the silicon substrate surface of the laminate 1. In the figure, 11 is a frame base, 11a is a first grinding chamber, 11b is a second grinding chamber, 11c is a first polishing chamber, 11d is a second polishing chamber, and 11e is a partition wall. A storage cassette 12 stores 10 or 15 laminates 1. A first transfer robot 13 and a first index table 14 are present in the first grinding chamber 11a. Reference numeral 14a denotes a rotating shaft which supports the first index table and rotates by 90 degrees clockwise according to an instruction from an encoder (not shown), or 90 degrees, 90 degrees and -270 degrees clockwise. , Rotate 90 degrees. Reference numerals 15a, 15b, 15c and 15d denote vacuum chuck tables which are concentrically arranged at four positions around the rotation shaft 14a of the first index table 14, and are each supported by a rotation shaft which is not shown. . 15a is a loading zone of the laminated body 1, 15b is a rough grinding zone of the laminated body 1, 15c is a finishing grinding zone of the laminated body 1, and 15d is a cleaning / unloading zone of the laminated body 1. -.

  On the loading zone 15a, the first transfer robot 13 sucks the silicon substrate surface of the stacked body 1 stored in the storage cassette 12 by a suction arm, and the stacked body 1 is transferred. A grinding wheel head 16 is rotatably and vertically movable on the rough grinding zone 15b so that the tip of the cup wheel type diamond grinding wheel rotates and passes through the center of the laminate 1. A grinding wheel head 17 is provided on the head of the finish grinding zone 15c so as to be able to rotate and move up and down so that the tip of the cup wheel type diamond grinding wheel rotates and passes through the center of the laminate 1. Further, a cleaning apparatus 18 in which a substrate cleaning device 18a and a vacuum chuck table liner 18b whose structure is disclosed in Japanese Patent Application Laid-Open No. 2005-44874 is paired above and below the vacuum chuck table 15d is vertically moved. It is provided as possible.

  The cup wheel type diamond grindstone used for grinding is a known coarse grinding cup wheel type diamond grindstone with a 360 wheel cup wheel grindstone, and a finish grinding cup wheel type diamond grindstone with a grind number of 1. , 500 mesh cup wheel type grindstone may be combined, but a rough wheel is a 325 mesh cup wheel type diamond grindstone, and a finishing wheel is a 2,000 mesh cup wheel type diamond. Combination of grindstones, or rough grinding grindstone (JIS general abrasive grain size) 320-360, softness of J or L, degree of concentration 60-80, porosity 0%, resin bond A cup wheel type diamond grindstone is used, and grinding numbers are 2,000 to 2,500 as finishing grinding wheels. Degree is 120 to 160, a porosity of 8% to 12%, Kappuhoi of resin bond - preferably used Le-type diamond grinding wheel. As the diamond abrasive grains, natural diamond (D), synthetic diamond (SD), or metal-coated synthetic diamond (SDC) is used.

  The second grinding chamber 11b is a chamber that grinds the silicon substrate surface of the laminate opposite to the grinding surface of the laminate 1 ground in the first grinding chamber 11a. Similarly to the first grinding chamber 11a, the second grinding robot 11b supports the second transfer robot 23, the second index table 24, and the second index table, and receives instructions from an encoder (not shown). Rotate 90 degrees clockwise or 90 degrees, 90 degrees, -270 degrees, 90 degrees rotating shaft 24a and concentric circle about the rotating shaft 24a of the second index table 24 Vacuum chuck tables 25a, 25b, 25c, and 25d arranged at four locations, 25a is a loading zone of the laminate 1, 25b is a rough grinding zone of the laminate 1, and 25c is a rough grinding zone of the laminate 1. The finish grinding zone of the laminate 1 is formed as a cleaning / unloading zone 25d of the laminate 1. Also on the loading zone 25a, the second transfer robot 23 is a suction arm to grind the silicon substrate of the laminate 1 on the vacuum chuck 15d in the cleaning / unloading zone of the first grinding chamber. The surface is adsorbed, and the laminate 1 is conveyed to the loading zone 25a of the second grinding chamber. The grindstone head 26 is also provided so as to be able to rotate and move up and down so that the tip of the diamond cup grindstone rotates and passes through the center of the laminate 1 also on the rough grinding zone 25b. The grinding wheel head 27 is also provided so as to be able to rotate and move up and down so that the tip of the diamond cup grinding wheel rotates and passes through the center of the laminate 1 over the finish grinding zone 25c. Further, a cleaning apparatus 28 having a pair of a substrate cleaning device 28a and a vacuum chuck table liner 28b whose structure is disclosed in Japanese Patent Application Laid-Open No. 2005-44874 is moved vertically above the head of the vacuum chuck table 25d. It is provided as possible. Further, a third transfer robot 29 is installed in the second grinding chamber 11d, and adsorbs the silicon substrate grinding surface of the laminate 1 on the vacuum chuck table 25d at the cleaning / unloading zone position. Then, it is transferred onto a vacuum chuck table 35a forming a loading zone on the third index table 34 in the first polishing chamber 11c.

  The first polishing chamber 11 c is a chamber that polishes the silicon substrate grinding surface of the laminate 1. In the first polishing chamber 11c, a fourth transfer robot 33, a third index table 34, and a third index table are supported and rotated by 90 degrees in the clockwise direction according to an instruction from an encoder (not shown). Or a rotation shaft 34a that rotates 90 degrees, 90 degrees, -270 degrees, and 90 degrees in the clockwise direction, and a vacuum that is concentrically arranged at four locations around the rotation shaft 34a of the third index table 34. A chuck table 35a, 35b, 35c, 35d, 35a is a loading zone of the laminate 1, 35b is a rough polishing zone of the laminate 1, and 35c is a finish polishing zone of the laminate 1. 35 d forms a cleaning / unloading zone of the laminate 1. As described above, the silicon of the laminate 1 on the vacuum chuck 25d located in the cleaning / unloading zone of the second grinding chamber is the suction arm provided by the third transfer robot 29 in the second grinding chamber 11b. The substrate grinding surface is adsorbed and conveyed to the loading zone 35a of the first polishing chamber 11c.

  On the head of the vacuum chuck table 35b forming the rough polishing zone, a polishing head 36 having a polishing pad having a diameter of 1.15 to 1.3 times the diameter of the semiconductor substrate as a rotating shaft is supported on the laminated body. The polishing pad is provided so as to be able to swing about 50 to 75 mm and move up and down so as to cover the entire surface of the silicon substrate and toward the center of the semiconductor substrate. A polishing head 37 having a polishing pad having a diameter of 1.15 to 1.3 times the diameter of the semiconductor substrate as a rotating shaft is also mounted on the head of the vacuum chuck table 35c forming the finish polishing zone. The polishing pad is provided so as to be able to swing about 50 to 75 mm and move up and down so as to cover the entire surface of the silicon substrate and toward the center of the semiconductor substrate. Further, a cleaning device 38, which is a pair of the substrate cleaning device 38a and the vacuum chuck tape liner 38b having the above-described structure, is provided on the head of the vacuum chuck table 35d so as to be movable up and down. The fourth transfer robot 33 in the first polishing chamber 11c adsorbs the silicon substrate polishing surface of the stacked body 1 on the vacuum chuck table 35d at the cleaning / unloading zone position, and the inside of the second polishing chamber 11d. Are transferred onto a vacuum chuck table 45a forming a loading zone on the fourth index table 44.

  The second polishing chamber 11d is also a chamber that polishes the silicon substrate grinding surface of the laminate 1. In the second polishing chamber 11d, the fifth transfer robot 43, the fourth index table 44, and the fourth index table are supported and rotated by 90 degrees in the clockwise direction according to an instruction from an encoder (not shown). Or a rotating shaft 44a that rotates 90 degrees, 90 degrees, -270 degrees, and 90 degrees in the clockwise direction, and a vacuum that is arranged at four locations concentrically around the rotating shaft 44a of the fourth index table 44. A chuck table 45a, 45b, 45c, 45d, 45a is a loading zone of the laminate 1, 45b is a rough polishing zone of the laminate 1, and 45c is a finish polishing zone of the laminate 1. 45 d forms a cleaning / unloading zone for the laminate 1. The fourth transfer robot 43 sucks the silicon substrate polishing surface of the stack 1 on the vacuum chuck 45d in the cleaning / unloading zone and transfers it to the stack storage cassette 52 outside the second polishing chamber. To do.

  Above the head of the vacuum chuck table 45b forming the rough polishing zone, a polishing head 46 having a polishing pad having a diameter of 1.15 to 1.3 times the diameter of the semiconductor substrate as a rotating shaft is supported on the laminated body. The polishing pad is provided so as to be able to swing about 50 to 75 mm and to be movable up and down so as to cover the entire surface of the silicon substrate and toward the center of the semiconductor substrate. A polishing head 47 in which a polishing pad having a diameter of 1.15 to 1.3 times the diameter of the semiconductor substrate is supported on the rotating shaft on the head of the vacuum chuck table 45c forming the finish polishing zone is also a laminate. The polishing pad is provided so as to be able to swing about 50 to 75 mm and to be movable up and down so as to cover the entire surface of the silicon substrate and toward the center of the semiconductor substrate. Further, a cleaning device 48 in which the substrate cleaning device 48a having the above structure and the vacuum chuck tape liner 48b are paired is also provided on the head of the vacuum chuck table 45d so as to be movable up and down.

  The laminate storage cassette 52 is conveyed and immersed in warm water stored in the hot water peeling apparatus 100, where ultrasonic vibration is added to the laminate storage cassette 52, and the hot water soluble adhesive is dissolved. The semiconductor substrates are separated from each other.

  FIG. 3 is a front partial sectional view of the polishing apparatus showing the positional relationship between the polishing head 36 and the third index table 34 in the first polishing chamber 11c.

In the polishing head 37 shown in FIG. 3, the disc-like polishing pad (upper surface plate) 60 in which the polishing cloth 62 is stuck on the surface of the disc-like support 61 has its polishing surface 62 a on the third index table 35. It is provided so as to cover the entire surface of the laminate 1 on the vacuum chuck table 35c in the existing finish polishing zone. The polishing head 37 is supported by a hollow spindle (rotating shaft) 63. The abrasive is supplied to the pipe 66 provided in the hollow spindle 63 through the pipe 64 and the rotary joint 65 by the pump P to wet the polishing cloth 62 of the polishing pad. The hollow spindle 63 of the polishing head 36 is supported by a mounting frame 70, and this mounting frame is further supported by a screw slider 71 provided in the middle of the ball screw 75. The ball screw 75 is movable in the front-rear direction on the guide rail 72 by receiving the rotational drive of the servo motor M ₂ , and the polishing head 37 can be swung in the center direction of the laminate 1. The air cylinder 79 moves the polishing head 37 in the vertical direction.

The hollow spindle 63 can be rotated at a predetermined rotational speed, for example, 10 to 180 min ⁻¹ by a rotary drive device including a prime mover M ₁ , a pulley 77, gears 76 and 78, and the like.

  Pressurized air is supplied from a compressor (not shown) to a space 68 between the inner chamber of the hollow spindle 63 and the abrasive supply pipe 66 via a pipe 66 connected to a rotary joint 65. Further, the gas in the space 68 is exhausted by a vacuum pump (not shown).

  The diameter of the polishing cloth 62 is 1.15 to 1.3 times the diameter of the semiconductor substrate to be polished, and polishing is performed while the polishing pad 60 is swung about 50 to 75 mm toward the center of the semiconductor substrate. In this case, the polishing pad surface can cover the entire surface of the silicon substrate of the laminated body for polishing. The number of back and forth oscillations of the polishing pad is sufficient from 1 to 20 times / minute. Further, the swing speed may be 80 to 200 cm / min.

  As a material for the polishing cloth 62, a polyurethane foam sheet or a sheet-like material obtained by processing a polyamide fiber into a nonwoven fabric and hardening it with a urethane prepolymer is used.

  The polishing agent varies depending on the type of substrate of the object to be polished, but a colloidal silica-based slurry for a silicon substrate, a ceria-based abrasive slurry for a glass substrate, and an alumina-based slurry and a diamond-based slurry for a sapphire substrate. Is preferred.

  In the third index table 34 shown in FIG. 3, the vacuum chuck tables 35 c and 35 d on which the laminate 1 is mounted include a porous ceramic plate 80 or a suction plate 80 perforated 80 a by a hollow spindle 81. The gas supply pipe 82 is built in the hollow spindle through the rotary joint 83 and the liquid supply pipe 84 is built in through the rotary joint 85. The tip of the gas supply pipe 82 is connected to a vacuum pump and a compressor via a three-way cock 86. The tip of the liquid supply pipe 84 is connected to a liquid pump via an opening / closing cock 87.

The hollow spindle 81 is Sa - Vomo - is rotationally driven by the motor M _4. The pair of vacuum chuck tables 35a and 35b is supported symmetrically with respect to the rotation shaft 34a (85) of the third index table 34. Rotary shaft 34a is Sa - Vomo - 90 degrees by motor M _3, or is -270 degree rotation drive.

The third index Te - spindle shaft 34a which journalled Bull 34 (85) the service - Vomo - is rotated by motor M ₃ to 90 degrees clockwise Russia - Dinguzo - lies down Vacu - Muchakkute - Bull 35a is The vacuum chuck table 35b in the first polishing zone moves to the position of the vacuum chuck table 35b, and the vacuum chuck table 35b in the rough polishing zone moves to the vacuum chuck table in the finishing polishing zone. The vacuum chuck table 35c in the finish polishing zone moves to the vacuum chuck table 35d in the cleaning / unloading zone. The third index Te - support the spindle shaft 34a of journalled Bull 34 - Vomo - is rotated by motor M ₃ to 90 degrees clockwise opposite direction around the second polishing zone - lies down Vacu - Muchakkute - Bull 35c is , Move to the position of the vacuum chuck table 35d in the cleaning / unloading zone. The cleaning device 38 includes a substrate cleaning brush device 38a, a ceramic-made chuck cleaner 38b, a shaft (hollow spindle) elevating mechanism 38c, a unit elevating mechanism 38d, a hollow spindle 38e through which the cleaning liquid passes, and a shaft rotating motor 38f. .

In the hot water peeling apparatus 100 shown in FIG. 4, the hot water tank 101 is covered with a heat insulating material outer shell made of foamed resin on the outer wall. On the bottom wall of the hot water tank 101, a support base 102 for storing a storage cassette 52 for storing 15 laminates 1 and ultrasonic transmitters 103, 104 are provided. Inside the hot water tank 101, hot water having a constant temperature of 60 to 90 ° C. is supplied by the pump P via the hot water supply pipe 105, and hot water in which the hot water dissolving adhesive is dissolved in the lower part of the side wall of the hot water tank 101. A drain pipe 106 for draining water is provided. In order to keep the hot water at a constant temperature of 60 to 90 ° C., the stirring blade 109, the heating heater 107, and the thermometer 108 that are rotationally driven by the motor M ₅ are buried in the hot water. If necessary, the upper open portion of the hot water tank 101 is covered with a heat insulating lid.

  The process of making the semiconductor substrate 2a extremely thin using the semiconductor substrate thinning apparatus 10 and the hot water peeling apparatus 100 shown in FIG. 3 is performed as follows.

  A storage cassette for storing 15 laminates 1 made of a laminate of semiconductor substrate 2 / warm water-soluble adhesive 3 / semiconductor substrate 2 by bonding the circuit surfaces of semiconductor substrate 2 using hot water-soluble adhesive 3 One of the laminates from 12 is adsorbed by the adsorbing arm of the first transfer robot 13 in the first grinding chamber 11a and is in the loading zone of the first index table 14 in the first grinding chamber. It is carried onto the vacuum chuck table 15a, and the laminated body 1 is fixed to the vacuum chuck table 15a by applying the vacuum.

  The first index table 14 is rotated 90 degrees clockwise to move the laminate 1 to the rough grinding zone 15b position.

  At that position, while rotating the vacuum chuck table 15b, the rotating cup wheel type diamond grindstone of the coarse grinding head 16 is lowered and brought into contact with and rubbed with the laminate 1, and the downfeed is performed. And grind 85-98% of the target grinding allowance. During grinding, a grinding liquid is supplied to the surface of the laminate.

  After the rough grinding is completed, the rough grinding head is raised to stop the rotation of the cup wheel type diamond grindstone, the supply of the grinding fluid, and the rotation of the vacuum chuck table 15b.

  The first index table 14 is rotated 90 degrees clockwise to move the laminate 1 to the finish grinding zone 15c position.

  At that position, while rotating the vacuum chuck table 15c, the cup wheel type diamond grindstone rotating in the finish grinding head 16 is lowered and brought into contact with and rubbed with the laminate 1, and the downfeed is performed. And grind the remainder of the target grinding allowance. During grinding, a grinding liquid is supplied to the surface of the laminate.

  After the finish grinding is finished, the finish grinding head is raised to stop the rotation of the cup wheel type diamond grindstone, the supply of the grinding fluid, and the rotation of the vacuum chuck table 15c.

  The first index table 14 is rotated 90 degrees or -270 degrees clockwise to move the laminate 1 to the cleaning / unloading zone 15d position.

  While rotating the vacuum chuck table 15d at the cleaning / unloading zone position, the substrate cleaning device 18a is lowered while supplying the cleaning liquid (pure water) to the grinding surface of the laminate 1, and the laminate 1 The ground surface is cleaned with a brush, and then the substrate cleaning device 18a is lifted, and spin drying is performed by rotating the vacuum chuck table 15d. After drying the ground surface of the laminate, rotation of the vacuum chuck table 15d is stopped, the vacuum is stopped, and compressed air is blown to the back side of the laminate to facilitate removal of the laminate from the vacuum chuck table 15d. To do.

  The suction surface of the laminated body at the position of the cleaning / unloading zone 15d is sucked by the suction arm of the second transfer robot 23 in the second grinding chamber 11b, and the suction arm is inverted halfway. After that, it is transported onto the vacuum chuck table 25a in the loading zone of the second index table 24 in the second grinding chamber 11b, and placed so that the unground surface of the laminate 1 faces upward. Let me put it.

  After the laminated body 1 is conveyed, the vacuum chuck table 15d at the cleaning / unloading zone position is rotated, and the ceramic chuck cleaner 18b is rotated and lowered to rotate the vacuum chuck table 15d. A cleaning liquid is also supplied while rubbing the surface. When the cleaning of the surface of the vacuum chuck table 15d is completed, the ceramic chuck cleaner 18b is raised, and then the rotation of the vacuum chuck table 15d is stopped.

  Next, the first index table 14 is rotated 90 degrees clockwise to return the vacuum chuck table to the loading zone 15a position.

  After the first index table 14 is rotated 90 degrees or -270 degrees in the clockwise direction, the chuck table 15a, 15b, 15c, 15d on the first index table 14 is described above. The new laminated body 1 is carried in, ground, cleaned, and the ground laminated body is conveyed to the second grinding chamber, so that the number of flattened laminated bodies per unit time in one flattening apparatus is increased.

Also in the second grinding chamber 11b into which the laminated body whose one side is ground is carried in, the first grinding chamber 11a.
Similarly to the above, the process of making the semiconductor substrate 2a surface of the laminated body extremely thin is performed as follows.

  It is adsorbed by the adsorbing arm of the second transfer robot 23 in the second grinding chamber 11b and is carried onto the vacuum chuck table 25a in the loading zone of the second index table 24. A vacuum is applied to fix the laminated body 1 to the vacuum chuck table 25a.

  The second index table 24 is rotated 90 degrees clockwise to move the laminate 1 to the rough grinding zone 25b position.

  At that position, while rotating the vacuum chuck table 25b, the rotating cup wheel type diamond grindstone of the rough grinding head 26 is moved down to contact the laminated body 1 and rubbed, and the downfeed is performed. And grind 85-98% of the target grinding allowance. During grinding, a grinding liquid is supplied to the surface of the laminate.

  After the rough grinding is finished, the rough grinding head is raised to stop the rotation of the cup wheel type diamond grindstone, the supply of the grinding fluid, and the rotation of the vacuum chuck table 25b.

  The second index table 24 is rotated 90 degrees clockwise to move the laminate 1 to the finish grinding zone 25c position.

  At that position, while rotating the vacuum chuck table 25c, the cup wheel type diamond grindstone rotating in the finish grinding head 26 is lowered and brought into contact with the laminated body 1, and the downfeed is made while sliding. And grind the remainder of the target grinding allowance. During grinding, a grinding liquid is supplied to the surface of the laminate.

  After the finish grinding is finished, the finish grinding head is raised to stop the rotation of the cup wheel type diamond grindstone, the supply of the grinding fluid, and the rotation of the vacuum chuck table 25c.

  The second index table 24 is rotated 90 degrees or -270 degrees clockwise to move the laminate 1 to the cleaning / unloading zone 25d position.

  While rotating the vacuum chuck table 25d located at the cleaning / unloading zone position, the substrate cleaning device 28a is lowered while supplying the cleaning liquid (pure water) to the ground surface of the laminate 1, and the laminate 1 The ground surface is cleaned with a brush, and then the substrate cleaning device 28a is raised, and spin drying is performed by rotating the vacuum chuck table 25d. After drying the ground surface of the laminated body, the rotation of the vacuum chuck table 25d is stopped, the vacuum is stopped, and compressed air is blown to the back side of the laminated body to easily remove the laminated body 1 from the vacuum chuck table 25d. And

  The laminated body whose both surfaces are ground at the position of the cleaning / unloading zone 25d is adsorbed by the adsorption arm of the third transfer robot 29 in the second grinding chamber 11b, and the first in the first polishing chamber 11c is adsorbed. The three-index table 34 is transported and placed on the vacuum chuck table 35a in the loading zone.

  After the laminate 1 is conveyed, the vacuum chuck table 25d located at the cleaning / unloading zone position is rotated, and the ceramic chuck cleaner 28b is rotated and lowered to rotate the vacuum chuck table 25d. A cleaning liquid is also supplied while rubbing the surface. When the cleaning of the surface of the vacuum chuck table 25d is completed, the ceramic chuck cleaner 28b is raised, and then the rotation of the vacuum chuck table 25d is stopped.

  Next, the second index table 24 is rotated 90 degrees clockwise to return the vacuum chuck table to the loading zone 25a position.

  After the second index table 24 is rotated 90 degrees or -270 degrees in the clockwise direction, the chuck table 25a, 25b, 25c, 25d on the second index table 24 is described above. The laminating body 1 with the new one side ground is brought in, ground, cleaned, and transported to the first polishing chamber, and the laminating body 1 is flattened per unit time in one flattening device. Increase the number of processed sheets.

  In the 1st grinding | polishing chamber 11c in which the double-sided grinding | polishing laminated body 1 was carried in, the grinding | polishing damage | wound and a stripe trace are removed by grinding | polishing, and the planarization which makes a grinding surface into a mirror surface is performed. The polishing allowance depends on the type of diamond grindstone used for grinding, but 2 to 10 μm is sufficient. The flattening process for mirror-finishing the semiconductor substrate grinding surface 2a of the multilayer body 1 is performed as follows.

  The laminate 1 carried by the third transfer robot 29 in the second grinding chamber 11b onto the vacuum chuck table 35a in the loading zone of the third index table 34 in the first polishing chamber. The stack 1 is fixed to the vacuum chuck table 35a by applying a vacuum.

  The third index table 34 is rotated 90 degrees clockwise to move the laminate 1 to the rough polishing zone 35b position.

  At that position, while rotating the vacuum chuck table 35b, the rotating polishing pad 60 of the rough polishing head 36 is lowered to contact, rub, and swing the laminated body 1 to achieve the target polishing allowance. Polish 85-99%. During polishing of the silicon substrate surface, a polishing liquid is supplied to the silicon substrate surface via the polishing cloth surface.

  After the rough polishing is completed, the polishing head 36 is raised, and then the rotation of the polishing head is stopped, the supply of the polishing liquid, and the rotation of the vacuum chuck table 35b are stopped.

  The third index table 34 is rotated 90 degrees clockwise to move the laminated body 1 to the finish polishing zone 35c position.

  At that position, while rotating the vacuum chuck table 35c, the rotating polishing pad of the finish polishing head 37 is lowered to contact, rub, and swing the laminated body 1 to obtain the target polishing allowance. Polish the remaining part. During polishing, the polishing liquid is supplied to the silicon substrate surface of the laminate through the polishing cloth surface.

  After finishing polishing, the finish polishing head is raised, and then the rotation of the polishing head is stopped, the supply of the polishing liquid, and the rotation of the vacuum chuck table 35c are stopped.

  The third index table 34 is rotated 90 degrees or -270 degrees clockwise to move the laminate 1 to the cleaning / unloading zone 35d position.

  While rotating the vacuum chuck table 35d at the cleaning / unloading zone position, the substrate cleaning device 38a is lowered while supplying the cleaning liquid (pure water) to the grinding surface of the laminate 1, and the laminate 1 The polished surface is cleaned with a brush, and then the substrate cleaning device 38a is raised, and spin drying is performed by rotating the vacuum chuck table 35d. After drying the polished surface of the laminated body, the rotation of the vacuum chuck table 35d is stopped, the vacuum is stopped, and the air is blown to the back side of the laminated body to facilitate the separation of the laminated body 1 from the vacuum chuck table 35d. And

  The laminated body having one surface polished at the position of the cleaning / unloading zone 35d is adsorbed by the adsorption arm of the fourth transfer robot 33 in the first polishing chamber 11c, and the laminated body 1 is inverted halfway. After that, it is transported and placed on the vacuum chuck table 45a in the loading zone of the fourth index table 44 in the second polishing chamber 11d.

  After the laminated body 1 is conveyed, the vacuum chuck table 35d at the cleaning / unloading zone position is rotated, and the ceramic chuck cleaner 38b is rotated and lowered to rotate the vacuum chuck table 35d. A cleaning liquid is also supplied while rubbing the surface. When the cleaning of the surface of the vacuum chuck table 35d is completed, the ceramic chuck cleaner 38b is raised, and then the rotation of the vacuum chuck table 35d is stopped.

  Then, the third index table 34 is rotated 90 degrees clockwise, and the vacuum chuck table is returned to the loading zone 35a position.

  After the third index table 34 is rotated 90 degrees or -270 degrees in the clockwise direction, the chuck table 35a, 35b, 35c, 35d on the third index table 34 is described above. The new laminated body 1 is grounded, polished, washed, transported to the second polishing chamber, and the flat body is flattened per unit time in one flattening device. Increase the number of processed sheets.

  The second polishing chamber 11d is a chamber that polishes the silicon substrate surface of the laminate opposite to the polishing surface of the laminate 1 polished in the first polishing chamber 11c. In the same manner as the first polishing chamber 11c, the second polishing chamber 11d also supports the fifth transfer robot 43, the fourth index table 44, and the fourth index table, and receives instructions from an encoder (not shown). A rotating shaft 44a that rotates 90 degrees clockwise or 90, 90, -270, and 90 degrees clockwise, and a concentric circle about the rotating shaft 44a of the fourth index table 44. Vacuum chuck tables 45a, 45b, 45c, and 45d arranged at four locations, 45a is a loading zone of the laminated body 1, 45b is a rough polishing zone of the laminated body 1, and 45c is a rough polishing zone of the laminated body 1. A finish polishing zone of the laminate 1 is formed, and 45d forms a cleaning / unloading zone of the laminate 1. On the loading zone 45a, the fourth transfer robot 33 in the first polishing chamber 11c is a suction arm on the vacuum chuck 35d in the cleaning / unloading zone of the first polishing chamber. The silicon substrate polishing surface of the laminate 1 is adsorbed and the laminate 1 is conveyed to the loading zone 45a of the fourth polishing chamber.

  A rough polishing head 46 is also provided on the head of the rough polishing zone 45b so as to be able to rotate, move up and down, and move back and forth. A finish polishing head 47 is also provided on the finish polishing zone 45c so as to be able to rotate, move up and down, and move back and forth. Further, a cleaning device 48 in which a substrate cleaning device 48a and a vacuum chuck table liner 48b whose structure is disclosed in Japanese Patent Application Laid-Open No. 2005-44874 is vertically moved also above the vacuum chuck table 45d. It is provided as possible.

  Above the head of the vacuum chuck table 45b forming the rough polishing zone, a polishing head 46 having a polishing pad having a diameter of 1.15 to 1.3 times the diameter of the semiconductor substrate as a rotating shaft is supported on the laminated body. The polishing pad is provided so as to be able to swing about 50 to 75 mm and to be movable up and down so as to cover the entire surface of the silicon substrate and toward the center of the semiconductor substrate. A polishing head 47 in which a polishing pad having a diameter of 1.15 to 1.3 times the diameter of the semiconductor substrate is supported on the rotating shaft on the head of the vacuum chuck table 45c forming the finish polishing zone is also a laminate. The polishing pad is provided so as to be able to swing about 50 to 75 mm and to be movable up and down so as to cover the entire surface of the silicon substrate and toward the center of the semiconductor substrate. Further, a cleaning device 48 in which the substrate cleaning device 38a and the vacuum chuck tape cleaner 38b having the above-described structure are paired is also provided on the head of the vacuum chuck table 45d so as to be vertically movable. The fifth transfer robot 43 is installed in the second polishing chamber 11d, and adsorbs the silicon substrate polishing surface of the stacked body 1 on the vacuum chuck table 45d at the cleaning / unloading zone position. Then, it is conveyed to the laminate storage cassette 52 outside the room.

  The laminate storage cassette 52 is transported and immersed in constant temperature hot water of 60 to 90 ° C. stored in the hot water peeling apparatus 100, where 20 to 150 KHz ultrasonic vibration is added to the laminate storage cassette 52, The soluble adhesive 3 is dissolved in about 2 to 5 minutes, and the semiconductor substrates 2 and 2 are separated from each other. The ultrasonic transmitters 103 and 104 may alternately transmit a low-frequency sound wave of 20 to 50 KHz and a high-frequency sound wave of 80 to 150 KHz, or one of the ultrasonic transmitters 103 to a low-frequency sound wave of 20 to 50 KHz. It is possible to set the other ultrasonic transmission device 104 to a high frequency sound wave of 80 to 150 KHz, and simultaneously irradiate a low frequency sound wave and a high frequency sound wave.

  When the heat extinguishing resin adhesive 3 is used instead of the hot water-soluble adhesive 3, the laminated body 1 that has been subjected to grinding and polishing is placed on the support base of the heat peeling device and supported at 150 to 170 ° C. The stage is heated for 2 to 5 minutes, and the heat extinguishing resin adhesive 3 is vaporized and extinguished to be separated into two ultrathin planarized semiconductor substrates 2 and 2.

  In carrying out the method for planarizing a semiconductor substrate of the present invention, a cutting groove surface of the semiconductor substrate is preliminarily cut with a dicer blade or laser light, and then laminated, ground, and polished. May be performed.

  The semiconductor substrate flattening method of the present invention is obtained by adhering the electronic circuit surfaces of the semiconductor substrate 2 using a hot water soluble adhesive or a heat extinguishing resin adhesive 3 to form a semiconductor substrate 2 / warm water soluble adhesive (heating The extinction resin adhesive) 3 / Semiconductor substrate 2 laminate 1 is formed, and then the laminate front and back surfaces can be ground and polished to reduce the thickness of the substrate. The amount of use is halved. Moreover, since the hot water-soluble adhesive or the heat extinguishing resin adhesive 3 is used, it is compared with the conventional method in which the thinned semiconductor substrate is peeled off using another peeling adhesive tape. Since no stress is applied to the thinned semiconductor substrate when it is peeled off, there is no opportunity for damage to the ultrathin semiconductor substrate. In addition, the annealing effect caused by the hot water of 60 to 90 ° C. or the heating of 150 to 170 ° C. releases heat stress during processing from the ultrathin semiconductor substrate, so that an ultrathin semiconductor substrate with small warpage can be obtained.

It is sectional drawing of the laminated body of a semiconductor substrate / warm water solubility adhesive / semiconductor substrate. It is a top view of the thinning processing apparatus of a semiconductor substrate. It is the front view which notched one part of the grinding | polishing apparatus of the laminated body. It is sectional drawing of the hot water peeling apparatus of a laminated body.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Laminated body 2 Semiconductor substrate 3 Hot water soluble adhesive 10 Thinning processing apparatus 100 Hot water peeling apparatus

Claims (3)

  The electronic circuit surfaces of a pair of semiconductor substrates are bonded using a hot water-soluble adhesive that dissolves in hot water at 60 to 90 ° C. to form a semiconductor substrate / warm water-soluble adhesive / semiconductor substrate laminate. The substrate surface on the front and back surfaces of the body is ground, washed, and then the ground surface is polished to mirror the ground surface. After the polished surface is cleaned, the ground and ground laminate is heated to 60 to 90 ° C. A method for planarizing a semiconductor substrate, wherein the method is soaked in a hot water-soluble adhesive and separated into two semiconductor substrates having a thickness of 20 to 50 μm.   A semiconductor substrate / heat extinguishing resin adhesive / semiconductor substrate laminate is formed by bonding electronic circuit surfaces of a pair of semiconductor substrates using an adhesive containing a heat extinguishing resin, and a surface of the laminate is displayed. After grinding and cleaning the substrate surface on the back side, the ground surface is then polished to mirror the ground surface, the polished surface is cleaned, and then the ground and ground laminate is heated to 150 to 170 ° C. and heated. A method for planarizing a semiconductor substrate, wherein the extinguishing resin adhesive is extinguished and separated into two semiconductor substrates having a thickness of 20 to 50 μm.   3. The method for planarizing a semiconductor substrate according to claim 1, wherein polishing of the substrate surface of the semiconductor substrate of the stacked body is performed by adsorbing the stacked body to a chuck that is supported by a rotating shaft so that the semiconductor substrate has a diameter of 1. Polishing is performed using a polishing pad having a diameter 15 to 1.3 times, while covering the entire substrate surface of the laminate and swinging the polishing pad about 50 to 75 mm toward the center of the semiconductor substrate. A characteristic planarization method.

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