200845170 九、發明說明： 【發明所屬之技術領域】 :七月係關於化學機械研磨墊及化學機械研磨方法。 L先1?技術】 近年來，於半導體裝置之形成等方面 '、、、可形成具有優越平坦性之表面的研磨方法’ p〇1 . " (Chemical Mechanical rcMPj}° 邊使化予機械研磨墊與被研磨面㈣，—邊於 =化，械研磨用水系分散體（分散了研磨粒之水系分 :水料)而進行研磨的技術。於此化學機械研磨方法 研磨將因化學機械研磨塾之性狀及特性等而大幅左右 研磨果'自習知以來已提案有各種化學機械研磨塾。 、由二：’自以珂已知有使用含細微氣泡之聚胺基甲酸酯發 泡體作f化學機械研磨墊，於開在此墊表面上之洞穴= 用於•中保持化學機械研磨用水系分散體而 '仃研磨的化學機械研磨墊（例如，參照日本專利# 公報，平―公報及二 ：!又於错由化學機械研磨法進行被研磨體之研磨時，係 用上: 二^墊以雙面膠帶貼附於研磨裝置定盤上而使 研磨墊之接黏方法係為了耐受研磨時之壓力和煎切斷 必須具有強接黏力（例如’參照曰本專利特開 97105535 200845170 =)04 140215號公報）。再者，關於研磨墊對於研磨裝置 疋盤的接黏方法，過去僅著眼於不對使用後之剝離容易度 和研磨丨生此造成影響而將整面予以均勻接黏的方法進行 檢例如，參照日本專利特開2〇〇5 —3494〇號公報）。 作為為了提升研磨性能而著眼於研磨裝置定盤與研磨 墊之接黏部分的技術，有如在研磨墊之接黏面侧上設置溝 •等之凹部的技術（例如，參照日本專利特開2006-75959號 公報）。然而，由於在接黏面整面上設置溝等之凹部，故 在研磨面壓附被研磨物的情況下，將涵括墊整面而墊表面 大巾田曲折’結果將難以達成研磨面之均勻研磨速度。 【發明内容】 本發明係提供可解決上述課題之化學機械研磨墊及化 學機械研磨方法。 本發明之化學機械研磨墊係用於固定於研磨裝置定盤 而使用者，其含有： () 研磨層，與 • 設於上述研磨層與上述研磨裝置定盤之間的接黏層， ^ 對於上述接黏層，含有上述研磨層之中央部之中央區域 的接黏強度係較其他區域之接黏強度低。 本發明之化學機械研磨藝中，上述中央區域之接黏強度 可為上述其他區域之接黏強度的75%以下。 本發明之化學機械研磨墊中，上述中央區域可為圓形 本發明之化學機械研磨墊中，上述接黏層可於上述中央 97105535 6 200845170 區域具有貫通孔。 本發明之化學機械研磨塾中，上述接黏層之厚度為5〇 # m〜250 // m， 上述中央區域之面積可相對於上述研磨層之上述研磨 裝置定盤侧之總面積，為0.4%〜60%。 本發明之化學機械研磨塾中，上述中央區域可為自研磨 •層中d朝周邊部延伸成放射線狀的直線形狀。 『本發明之化學機械研磨塾中，上述中央區域可為複數之 同心圓狀。 本發明之化學機械研磨方法，係使用上述化學機械研磨 墊之任一者。 條據本發明，可提供能抑制化學機械研磨中之研磨層損 傷’且製品壽命較長之化學機械研磨f，以及可提供藉由 使用該化學機械研磨墊進行研磨而可長時間進行高品質 化學機械研磨的化學機械研磨方法。 【實施方式】 • 1 ·本實施形態 — 圖1為表示本實施形態之化學機械研磨墊的剖面圖。本 實施形fe之化學機械研磨墊1 〇係含有研磨層1 1、與設於 研磨層11及研磨裝置定盤13之間的接黏層i 2。亦即， 於化學機械研磨墊10中，接黏層丨2係用於將研磨層i i 固定於研磨裝置定盤13上。以下，將研磨層u之接黏層 12側之面稱為非研磨面，將相反侧之面稱為研磨面。 對於接黏層12,含有上述研磨層n之中央部之中央區 97105535 7 200845170 域A的接黏強度，係較其他區域之接黏強度低。中央區域 A之接黏強度較佳為上述其他區域之接黏強度的75%以 下，更佳為50%以下。更具體而言，接黏層係於中央 區域A具有貫通孔20。貫通孔20係於接黏層12中從研 磨層11侧達至研磨裝置定盤13侧。200845170 IX. Description of the invention: [Technical field to which the invention pertains]: July relates to chemical mechanical polishing pads and chemical mechanical polishing methods. L first 1 technology] In recent years, in the formation of semiconductor devices, etc., it is possible to form a polishing method with a surface having superior flatness. pChem1 . " (Chemical Mechanical rcMPj}° The pad and the surface to be polished (4), the technique of grinding the water-based dispersion (the water component of the abrasive grain: water), and grinding the chemical mechanical polishing method. Various properties and characteristics, etc., have been greatly polished. 'A variety of chemical mechanical polishing 已 has been proposed since the introduction of the syllabus. 由2: 'From 珂, it is known to use a polyurethane foam containing fine bubbles for f A chemical mechanical polishing pad, a cavity opened on the surface of the pad = a chemical mechanical polishing pad for maintaining a chemical mechanical polishing aqueous dispersion and a 'grinding' (for example, refer to Japanese Patent # 公告, 平-公告 and II :! In the case of the grinding of the object to be polished by the chemical mechanical polishing method, the system uses: the double-sided tape is attached to the polishing device fixing plate to make the bonding method of the polishing pad to resist the grinding. Time The pressure and the frying cut must have a strong adhesive force (for example, 'Refer to JP-A-97105535 200845170 =) 04 140215). Further, regarding the method of bonding the polishing pad to the grinding device, the past only focused on A method of uniformly bonding the entire surface without affecting the ease of peeling after use and the influence of the polishing, for example, refer to Japanese Laid-Open Patent Publication No. Hei. No. Hei. As a technique for focusing on the bonding portion of the polishing apparatus fixing plate and the polishing pad in order to improve the polishing performance, there is a technique of providing a groove or the like on the adhesive side of the polishing pad (for example, refer to Japanese Patent Laid-Open No. 2006- Bulletin 75959). However, since a concave portion such as a groove is provided on the entire surface of the adhesive surface, when the object to be polished is pressed against the polishing surface, the entire surface of the pad is covered and the surface of the pad is tortuously folded. As a result, it is difficult to achieve the abrasive surface. Uniform grinding speed. SUMMARY OF THE INVENTION The present invention provides a chemical mechanical polishing pad and a chemical mechanical polishing method which can solve the above problems. The chemical mechanical polishing pad of the present invention is for use in a fixing device for a polishing apparatus, and comprises: () an abrasive layer, and an adhesive layer disposed between the polishing layer and the polishing device fixing plate, ^ In the adhesive layer, the adhesive strength of the central portion including the central portion of the polishing layer is lower than that of the other regions. In the chemical mechanical polishing technique of the present invention, the adhesive strength of the central region may be 75% or less of the adhesive strength of the other regions. In the chemical mechanical polishing pad of the present invention, the central region may be circular. In the chemical mechanical polishing pad of the present invention, the adhesive layer may have a through hole in the central portion of the central 97105535 6 200845170. In the chemical mechanical polishing crucible of the present invention, the thickness of the adhesive layer is 5 〇 #m~250 // m, and the area of the central region may be 0.4 relative to the total area of the polishing apparatus on the fixing side of the polishing layer. %~60%. In the chemical mechanical polishing crucible of the present invention, the central region may be a linear shape extending radially from the polishing layer to the peripheral portion. In the chemical mechanical polishing crucible of the present invention, the central region may be a plurality of concentric circles. In the chemical mechanical polishing method of the present invention, any of the above chemical mechanical polishing pads is used. According to the present invention, it is possible to provide a chemical mechanical polishing F capable of suppressing damage of an abrasive layer in chemical mechanical polishing and having a long product life, and to provide high-quality chemistry for a long period of time by polishing using the chemical mechanical polishing pad. Chemical mechanical polishing method for mechanical grinding. [Embodiment] 1] This embodiment - Fig. 1 is a cross-sectional view showing a chemical mechanical polishing pad of this embodiment. The chemical mechanical polishing pad 1 of the present embodiment contains an abrasive layer 11 and an adhesive layer i 2 provided between the polishing layer 11 and the polishing apparatus fixed plate 13. That is, in the chemical mechanical polishing pad 10, the adhesive layer 2 is used to fix the polishing layer i i to the polishing apparatus fixing plate 13. Hereinafter, the surface on the side of the adhesive layer 12 of the polishing layer u is referred to as a non-abrasive surface, and the surface on the opposite side is referred to as a polished surface. For the adhesive layer 12, the bonding strength of the central region 97105535 7 200845170 containing the central portion of the polishing layer n is lower than that of other regions. The bonding strength of the central portion A is preferably 75% or less, more preferably 50% or less, of the other regions. More specifically, the adhesive layer has a through hole 20 in the central region A. The through hole 20 is formed in the adhesive layer 12 from the side of the grinding layer 11 to the side of the polishing apparatus fixing plate 13.
貫通孔20之平面形狀較佳為圓形狀，其直徑為 =〜200_，更佳為20〜100_。中央區域a之面積、亦即 貫通孔20之面積的比例，係相對於研磨層n之非研磨面 可為0.4%〜60%，較佳為1%〜4〇%，更佳為2%〜3〇0/〇。 於此，中央部」係表示研磨層11之非研磨面之重心所 在的位置的概念。又’「含有中央部之中央區域」係除了 _央區域A之重心、由數學上嚴格之意味而言與非研磨面 之重心-致的情況之外’亦包括研磨層u之非研磨面之 重心位於中央區域A範圍内的情況的概念。 如此，藉由化學機械研磨墊10之接黏層12於含有中央 部之中央區域上具有貫通孔2G，則可緩和研磨層u之中 :部：近的壓力，可減低含有中央部之中央區域的龜裂和 溝的情況下溝之缺損的發生頻率，對於研 二態良好’抑制刮痕的發生，並可維持 被研磨物之良好面内均句性。 ^ ^ ^ Η ^ ^ 又，在接黏層12為例如含 Γ二Γ ’在將研磨，11固定於研磨裝置定 盤13上時’即使於㈣片材表面上“线，亦可將包 入的空氣集中於貫通孔2〇内 — 夺匕 Α之面積相對於研磨層u之 面、=藉由使中央區域 戸研磨面為2%〜30%，則可確 97105535 8 200845170 ^固定研磨層η並有效地將包人的空氣趕出至中央 Α 〇 本之化學機械研磨塾1。之形狀並無特別限 制，可作成為例如圓盤狀、多角柱狀等，並可配合安裝該 化學機械研磨墊10之研磨裝置而適當選擇。 v ^欠，針對研磨層及第丨接黏層的^及形狀進行詳細 • 說明。 _ 1 · 1 ·研磨層 研磨層11之平面形狀可例如為圓形狀。又，研磨層η 1 ° 層接黏層12之密黏性，錢高研磨層強度， 而可於研磨時防止研磨層U破損。 研磨層η係在具備上述要件之前提下，若為可發揮作 為化予機械研磨墊10的功能，則可由任音辛材所構材 作為化學機械研磨墊1Q+ 材所構材° ( 具有於化學機械研磨時伴持二：圭為/研磨前形成 π潛吋保持化學機械研磨用水系分散 體，使研磨屑暫時滯留等之功能的孔（細微空孔）。因此， ^佳為具備⑴由非水溶性部材與分散於該非水溶性部材 ^之水溶㈣子所構成㈣材或⑼由非水溶性部材盘 /刀政於該非水溶性部材中之空孔所構成的素材。 - /、中jl it素材（I )係於化學機械研磨步驟時，水生The planar shape of the through hole 20 is preferably a circular shape having a diameter of =~200_, more preferably 20 to 100_. The ratio of the area of the central region a, that is, the area of the through hole 20, may be 0.4% to 60%, preferably 1% to 4%, more preferably 2%, with respect to the non-polishing surface of the polishing layer n. 3〇0/〇. Here, the central portion indicates the concept of the position of the center of gravity of the non-polishing surface of the polishing layer 11. In addition, the "central area containing the central part" is the non-abrasive surface of the abrasive layer u except for the center of gravity of the central area A, which is mathematically strict and the center of gravity of the non-abrasive surface. The concept of a situation where the center of gravity is located within the central area A. In this way, by the through-hole 2G in the central region including the central portion of the chemical mechanical polishing pad 10, the polishing layer u can be alleviated: the portion: the near pressure, and the central portion including the central portion can be reduced. In the case of cracks and grooves, the frequency of the occurrence of the groove is good, and the occurrence of the scratch is good, and the good in-plane uniformity of the object to be polished can be maintained. ^ ^ ^ Η ^ ^ Again, in the adhesive layer 12, for example, containing bismuth Γ 'When the grinding is performed, 11 is fixed on the polishing apparatus plate 13', even if the line is "on the surface of the (4) sheet, it may be enclosed. The air is concentrated in the through hole 2〇—the area of the engraving is relative to the surface of the polishing layer u, and the surface of the polishing layer is 2% to 30%, so that the fixed polishing layer η can be confirmed as 97105535 8 200845170 And the air of the package is effectively driven out to the central Α 化学 化学 chemical mechanical polishing 塾 1. The shape is not particularly limited, and can be, for example, a disk shape, a polygonal column shape, etc., and can be fitted with the chemical mechanical polishing. The polishing device of the pad 10 is appropriately selected. v ^ owing, the shape and shape of the polishing layer and the second adhesive layer are described in detail. _ 1 · 1 · The planar shape of the polishing layer 11 can be, for example, a circular shape. Further, the polishing layer η 1 ° is adhered to the adhesive layer 12, and the strength of the polishing layer is high, and the polishing layer U can be prevented from being damaged during polishing. The polishing layer η is lifted before the above-mentioned requirements are provided, and As a function of the mechanical polishing pad 10, it can be constructed by any sound As a material for the chemical mechanical polishing pad 1Q+ material (a hole with the function of forming a π-latency 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋 吋Therefore, it is preferable to have (1) a water-soluble (four) material composed of a water-insoluble material and a water-soluble (tetra) material dispersed in the water-insoluble material, or (9) a water-insoluble material disk/knife in the water-insoluble material. The material formed by the hollow hole in the middle. - /, the medium jl it material (I) is in the chemical mechanical grinding step, aquatic
Hi化學機械研磨用水系分散體接觸，進行溶解或膨潤 X生脫離’藉此㈣成在非水雜部材 化學機械研磨用水系分散體，另一方面，素材⑽= 97105535 9 200845170 先形成為空孔的部分將具有化 等之保持能力。 'π保用水糸分散體 以下，針對此等素材進行詳述。 ⑴由非水料部材與分散於㈣水 粒子所構成之素材 何甲之水命性 (Α)非水溶性部材 構成上述⑴非水純部材之材料並無特職定，作由 ( ==狀Τ大之成形容易，可賦予適度硬度和適度 =寻而a，敢好使用有機材料。作為有機材料，可舉例 口"、、可塑性樹脂、彈性體或生橡膠、硬化樹脂等。 :為士述熱：塑性樹脂，可舉例如烯烴系樹脂(例如聚 ♦丙烯等）、笨乙烯系樹脂（例如聚苯乙烯等）、丙 烯酸系樹脂(例如(？基)丙烯酸_脂等)、乙㈣ :相田於（’基）丙婦酸酯系樹脂者除外）、聚酯樹脂 二中，相畲於乙婦酯樹脂者除外)、聚醯胺樹脂、氟樹脂、 I /聚碳酸酯樹脂、聚縮酸樹脂等。 -作為上述彈性體或生橡膠，可舉例如二烯系彈性體（例 .y，2-聚丁二稀等）、、歸煙系彈性體（例如使乙稀_丙烯橡 膠與聚丙稀樹脂動態性地交聯者等）、胺基甲酸乙醋系彈 ，虹胺基甲酸乙酯系橡膠（例如胺基甲酸乙酯橡膠等）、 苯乙婦系彈性體（例如苯乙烯_ 丁二烯-苯乙稀嵌段共聚合 體（以下有時稱為「SBS」）、苯乙烯_ 丁二烯—苯乙烯嵌段 共聚合體之氫化物（以下有時稱為「SEBS」）等）、共軛二 稀系橡膠（例如高順式丁二烯橡膠、低順式丁二稀橡谬、 97105535 200845170 異戊二烯橡膠、苯乙烯-丁二烯橡膠、苯乙烯_異戊二烯橡 膠、丙烯腈-丁二烯橡膠、氯丁二烯橡膠等）、乙烯_α_ 烯烴橡膠（例如乙烯-丙烯橡膠、乙烯_丙烯_非共軛二烯橡 膠等）、丁基橡膠、其他橡膠（例如聚矽氧橡膠、氟橡膠、 腈橡膠、氯砜化聚乙烯、丙烯酸橡膠、表氯醇橡膠、多硫 化橡膠等）等。 ，作為述硬化樹脂，可舉例可熱硬化樹脂、光硬化樹脂 等，此等之具體例有如胺基甲酸乙酯樹脂、環氧樹脂、不 飽和聚酯樹脂、聚胺基甲酸酯_脲樹脂、脲樹脂、㈣脂、 苯酚樹脂等。 此等有機材料可僅使用丨種，亦可並用2種以上。 又’此等有機材料亦可為具有適當官能基而經改質者。 :此’作為適當之官能基，可舉例如具有酸酐物構造之 基、鲮基、羥基、環氧基、胺基等。 ，等有機材料較佳係其—部分或全部經交聯者。藉由使 材賦ΓΓΐ材含有經交聯之有機材料，則可對非水溶性部 彈性回復力，並可於化學機械研磨時抑制化 興機二研f墊10之因磨擦應力所造成的變位。又，在化 研好職隸（dressing)(與化學難研磨= 或叫進行之化學機械研磨塾10之 互 :孔亚可有效抑制化學機械研磨墊10 ! 4。处而，在整修時亦有效形成孔，而可=起毛 學機械研磨用水系分散體之保持性的降 得 97105535 11 200845170 、且可長期間保持研磨平坦性的化學機械研磨墊1 〇。 作為上述經交聯之有機材料，較佳係含有自經交聯之熱 可塑性樹脂及經交聯之彈性體或經交聯之橡膠（於此，「經 交聯之橡膠」係指上述「生橡膠」之交聯物）中選擇之至 少一種，更佳係含有自經交聯之二烯系彈性體、經交聯之 苯乙烯系彈性體及經交聯之共軛二烯系橡膠中選擇之至 少一種，特佳為含有自經交聯之丨，2_聚丁二烯、經交聯 =SBS、經交聯之SEBS、經交聯之苯乙烯丁二烯橡膠、經 父聯之苯乙烯-異戊二烯橡膠及經交聯之丙烯腈—丁二烯 橡膠中選擇之至少一種，最好為含有自經交聯之丨，2一聚 丁二烯、經交聯之SBS、經交聯之SEBS中選擇之至少一 種0 在有機材料之一部分為經交聯者、其他部分為非交聯者 的情況下，作為此種非交聯之有機材料，較佳為含有非交 聯之熱可塑性樹脂及自非交聯之彈性體或生橡膠中選擇 之^少:種’更佳為含有自非交聯之烯烴系樹脂、非交聯 之笨乙烯系樹脂、非交聯之二烯系彈性體、非交聯之苯乙 稀系彈性體、非交聯之#二烯“膠及非交聯之丁基橡 科選擇之至卜種，更佳為含有自非交聯之聚苯乙土稀、 非j聯之1，2-聚丁二烯、非交聯之SBS、非交聯之sebs、 非交聯之苯乙烯-丁二烯橡膠、非交聯之苯乙烯—異戊二烯 橡膠及非交聯之丙烯腈-丁二烯橡膠中選擇之至少一種， 特佳為含有自非交聯之聚苯乙烯、非交聯之I，？ —聚丁二 烯、非交聯之SBS及非交聯之SEBS中選擇之至少二種厂 97105535 12 200845170 在有機材料之一部分為經交聯者、其他部分為非交聯者 的情況下，非水溶性部材中所占有之經交聯之有機材料的 比例，較佳為30質量％以上、更佳為50質量％以上、特佳 為70質量％以上。 在有機材料之一部分或全部為經交聯者的情況下，交聯 的方法並無特別限定，可藉由例如化學交聯法、放射線交 - 聯法、光交聯法等之方法進行。作為上述化學交聯法，可 使用例如有機過氧化物、硫、硫化合物等作為交聯劑而進 { ' 行。上述放射線交聯法可藉由例如電子束照射等之方法而 進行。上述光交聯法可藉由例如紫外線照射等之方法而進 行。 此等之中，較佳為化學交聯法，而由操作性佳及化學機 械研磨步驟中未有對被研磨物之汙染性而言，更佳為使用 有機過氧化物。作為有機過氧化物，可舉例如過氧化二異 丙苯基、過氧化二乙基、過氧化二第三丁基、過氧化二乙 ( 醯基、過氧化二醯基等。 ^ 在交聯為由化學交聯法所進行的情況下，作為交聯劑之 . 使用量，係相對於供於交聯反應之非水溶性部材之總量 100質量份，較佳為0.01〜0.6質量份。藉由設為此範圍 之使用量，則可得到於化學機械研磨步驟中抑制了刮痕發 生之化學機械研磨墊10。 尚且，交聯係可針對構成非水溶性部材之材料的全部予 以一次進行，亦可針對構成非水溶性部材之材料的一部分 進行交聯後再與剩餘部分混合。又，亦可混合經各別交聯 97105535 13 200845170 之數種交聯物。 整由化學交聯法所進行的情況下，藉由調 法二的^晰聯條件，或於交聯為由放射線交聯 -次交聯操作，簡單地得到_部分經 = 交聯的有機材料之混合物。 八他ρ刀為非 ⑴非水溶性部材中’為了抑制與後述之⑻水溶性粒子 =之親和性及非水溶性部材中之⑻水溶性粒子的分散 性’可含有適當之相溶化劑。於此，作為相溶化劑，可舉 例如非離子系界面活性劑、偶合劑等。 (Β)水溶性粒子 (Β)水溶性粒子係於化學機械研磨墊1〇中，藉由與化學 機械水系分散體接觸而自非水溶性部材脫離，於非水溶性 部材中形成孔’此外’具有使化學機械研磨墊U之研磨 基體之押人硬度增大的效果，而實現上述研磨基體之蕭氏 D硬度。 上述脫離係藉由與化學機械研磨用水系分散體中所含 有之水或水系混合媒體之接觸所造成的溶解、膨潤等而發 生。 (Β)水溶性粒子係為了確保上述化學機械研磨墊1〇之 研磨層11之押入硬度，較佳為中實體。從而，此水溶性 粒子特佳係於化學機械研磨墊10中可確保充分押入硬度 之中實體。 構成（Β)水溶性粒子之材料並無特別限定，可舉例如有 97105535 200845170 2水溶性粒子及無機水溶性粒子。作為 乳糖、甘♦醢莖/ '(彳彳如，澱粉、糊精、環糊精等）、 貝、聚乙_、聚乙婦対相、聚丙稀酸、 浚裱氧乙烷、水溶性之减光性 · 仆取里# ^ <这尤丨生树脂、颯化聚異戊二烯、石風 化承異戊一烯共聚合體等。作為 t作為上述無機水溶性粒子，可 =如，酸鉀、石肖酸鉀、碳酸鉀、碳酸氫卸、氯化鉀、漠 續酸鎮等。此等之中，較佳為有機水溶性 ’、:、、、多糖類’再更佳為環糊精，特佳為石-環糊 精0 此等水溶性粒子可單獨制上述各素材或組合2種以 上而使用、。再者，可為由既定材料所形成之i種水溶性粒 子’亦可為由不同材料所形成4 2種以上的水溶性粒子。 (B)水溶性粒子之平均粒徑較佳為〇 i 5〇〇#m、更佳 0.5〜100/zni。藉由作為此範圍之粒徑的（B)水溶性粒子， (則可將因⑻水溶性粒子之脫離所發生之孔的大小控制在 •適當範圍内，藉此，則可得到化學機械研磨步驟時之化學 機械研磨用水系分散體之保持能力及研磨速度優越、且機 械強度優越之化學機械研磨墊！ 〇。 (B)水溶性粒子之含有量係相對於（A)非水溶性部材與 (B)水溶性粒子之合計，較佳為1〇〜9〇體積％、更佳15〜6〇 體積％、再更佳為20〜40體積％。藉由將（B)水溶性粒子之 含有量设為此範圍，則可得到機械強度與研磨速度之均衡 優越的化學機械研磨墊1 〇。 97105535 15 200845170 j述（B)水溶性粒子較佳係於化學機械研磨墊Μ中，僅 溶:機械研磨用水系分散體接觸之表層時才 —y ;水而發生脫離，而在研磨層11内部並不進 ^ 、 口此，（β)水溶性粒子亦可於最外部之至少一部 ：抑制吸濕的外殼。此外殼可物理性吸附於水溶性粒 者而：：化學性地結合至水溶性粒子’再者亦可藉由此兩 、=於水溶性粒子上。作為形成此種外殼的材料，可 列如環氧樹脂、聚醯亞胺、聚醯胺、聚⑦酸醋等。 (Π)由非水溶性部材與分散於該非水溶性部材 孔所構成的素材 二 在研磨I 11 4由非纟溶性部材與分散於該非水 空孔所構成的情況下，可舉例如聚胺基甲酸酉旨、三 承虱胺樹脂、聚酯、聚砜、聚乙酸乙烯酯等之發泡體。 作為分散於上述非水溶性部材中之空孔的平均口徑較 佳為〇.l#m〜500 #m，更佳為〇.5〜1〇〇#m。 研磨層11之形狀並無特別限定，可作成為例如圓盤 狀、多角柱狀等，並可配合安裝化學機械 用之研磨裝置予以適當選擇。 而使 研磨層11之大小及厚度並無特職^，❹在圓盤狀 =It况下’直控可設為15Q〜12G()mm、尤其是5⑽〜刪咖， 厚度可設為1.0〜5.0醜、尤其是1.5〜3.〇mm。 化學機械研磨墊1〇之研磨層u可於研磨面上具有溝。 此溝係具有下述功能：保持供給於化學機械研磨時之化學 機械研磨用水系分散體，並將其均勻分配於研磨面上，使 97105535 16 200845170 研磨屑和使用完畢之水系分散體等之廢棄物暫時滯留，成 為用於排出至外部的經路。 上述溝之形狀並無特別限制，可為例如旋渦狀、同心圓 狀、放射狀等。本實施形態中，溝較佳係以對中央部均勻 施加壓力般具有以研磨& u之中央部為中心的點對稱形 狀0 另外’研磨層11之非研 '丨丨/々叫…丁入，工π从巧一面所形 成。藉此，可兩度維持機械強度。又，藉由以均一面形成 非研磨面側，則研磨層u可保持上述研磨面側 U 成區域的自由度。 心 另外，化學機械研磨塾10除了研磨部以外尚可具 其他功能的部分。作為具有其他功能的部分，可舉例如用 於使用光學式終點檢測裝置而檢測終點的窗Hi chemical mechanical polishing is contacted with a water-based dispersion to dissolve or swell X-ray detachment, thereby (4) forming a water-based dispersion in a non-hydro-complex chemical mechanical polishing. On the other hand, the material (10) = 97105535 9 200845170 is first formed into a void. The part will have the ability to maintain. 'π 保水糸分散 The following is a detailed description of these materials. (1) The non-aqueous material and the material composed of the (4) water particles are composed of the water-insoluble (Α) water-insoluble material. (1) The material of the non-water-purified component is not specified, (== It is easy to form, and it can be given moderate hardness and moderateness. = It is easy to use organic materials. As an organic material, it can be exemplified by mouth, plastic resin, elastomer or raw rubber, hardened resin, etc. The heat: the plastic resin may, for example, be an olefin resin (for example, polyacrylonitrile), a stupid vinyl resin (for example, polystyrene), an acrylic resin (for example, (meth)acrylic acid, etc.), or B (four): In addition to (in addition to ''base) propylene terephthalate resin), polyester resin 2, except for ethyl acrylate resin, polyamine resin, fluororesin, I / polycarbonate resin, polycondensation Acid resin, etc. - Examples of the elastomer or raw rubber include a diene elastomer (for example, y, 2-polybutylene dilute) and a quinone-based elastomer (for example, a vinyl propylene rubber and a polypropylene resin dynamic) Sexually cross-linked, etc.), urethane acetonate, ethyl urethane rubber (such as urethane rubber), styrene elastomer (such as styrene-butadiene - a styrene block copolymer (hereinafter sometimes referred to as "SBS"), a hydride of a styrene-butadiene-styrene block copolymer (hereinafter sometimes referred to as "SEBS"), or the like, and a conjugated second Rare rubber (eg high cis butadiene rubber, low cis butadiene rubber, 97105535 200845170 isoprene rubber, styrene-butadiene rubber, styrene-isoprene rubber, acrylonitrile - Butadiene rubber, chloroprene rubber, etc.), ethylene_α_ olefin rubber (for example, ethylene-propylene rubber, ethylene-propylene/non-conjugated diene rubber, etc.), butyl rubber, and other rubbers (for example, polyoxyethylene rubber) , fluororubber, nitrile rubber, chlorosulfone polyethylene, acrylic rubber, epichlorohydrin rubber Polysulfide rubber or the like) and the like. As the hardening resin, a thermosetting resin, a photocurable resin, and the like can be exemplified, and specific examples thereof include a urethane resin, an epoxy resin, an unsaturated polyester resin, and a polyurethane resin. , urea resin, (tetra) grease, phenol resin, and the like. These organic materials may be used alone or in combination of two or more. Further, such organic materials may also be modified with appropriate functional groups. Here, as a suitable functional group, for example, a group having an acid anhydride structure, a mercapto group, a hydroxyl group, an epoxy group, an amine group or the like can be mentioned. Preferably, the organic material is part or all of the crosslinked. By making the material-carrying material contain the cross-linked organic material, the elastic recovery force can be applied to the water-insoluble portion, and the change due to the frictional stress of the chemical machine can be suppressed during the chemical mechanical polishing. Bit. In addition, in the research and development of the faculty (dressing) (with chemical hard grinding = or chemical mechanical polishing 进行 10 mutual: Kong Ya can effectively inhibit the chemical mechanical polishing pad 10! 4, and also effective in the renovation The pores are formed, and the chemical mechanical polishing pad 1 which can maintain the polishing flatness for a long period of time can be obtained by reducing the retention of the water-based dispersion by the mechanical polishing. As the above-mentioned crosslinked organic material, The product contains a crosslinked thermoplastic resin and a crosslinked elastomer or crosslinked rubber (herein, "crosslinked rubber" means the crosslinked product of the above "raw rubber") At least one, more preferably, at least one selected from the crosslinked diene elastomer, the crosslinked styrene elastomer, and the crosslinked conjugated diene rubber, particularly preferably containing Cross-linking, 2_polybutadiene, cross-linked = SBS, cross-linked SEBS, cross-linked styrene butadiene rubber, conjugated styrene-isoprene rubber and cross At least one selected from the group consisting of acrylonitrile-butadiene rubber, preferably Having self-crosslinking, at least one selected from the group consisting of 2-polybutadiene, cross-linked SBS, and cross-linked SEBS is a cross-linker in one part of the organic material and a non-cross-linking part in the other part. In the case of such a non-crosslinked organic material, it is preferred to include a non-crosslinked thermoplastic resin and a non-crosslinked elastomer or raw rubber selected from the group: Crosslinked olefinic resin, non-crosslinked stupid vinyl resin, non-crosslinked diene elastomer, non-crosslinked styrene elastomer, non-crosslinked #diene "glue" and non-crosslinking The butyl rubber is selected from the group, more preferably from non-crosslinked polystyrene, non-j-linked 1,2-polybutadiene, non-crosslinked SBS, non-crosslinked sebs At least one selected from the group consisting of non-crosslinked styrene-butadiene rubber, non-crosslinked styrene-isoprene rubber and non-crosslinked acrylonitrile-butadiene rubber, particularly preferably containing non-crossing At least two plants selected from the group consisting of polystyrene, non-crosslinked I, polybutadiene, non-crosslinked SBS and non-crosslinked SEBS 97105535 12 2008 45170 In the case where one of the organic materials is a cross-linker and the other part is a non-crosslinker, the proportion of the cross-linked organic material occupied in the water-insoluble material is preferably 30% by mass or more, more preferably 50% by mass or more, particularly preferably 70% by mass or more. In the case where one or all of the organic materials are cross-linked, the method of crosslinking is not particularly limited, and may be, for example, chemical crosslinking or radiation crosslinking. - a method such as a combination method or a photocrosslinking method. As the above chemical crosslinking method, for example, an organic peroxide, a sulfur, a sulfur compound or the like can be used as a crosslinking agent. The above-mentioned radiation crosslinking method can be borrowed. This is carried out by a method such as electron beam irradiation, etc. The above photocrosslinking method can be carried out by a method such as ultraviolet irradiation. Among these, a chemical crosslinking method is preferred, and an organic peroxide is more preferably used because of the operability and the contamination of the object to be polished in the chemical mechanical polishing step. Examples of the organic peroxide include diisopropylphenyl peroxide, diethyl peroxide, dibutyl peroxide, diethyl peroxide (fluorenyl, bismuth peroxide, etc.) In the case of the chemical crosslinking method, the amount of the crosslinking agent is preferably 0.01 to 0.6 parts by mass based on 100 parts by mass of the total amount of the water-insoluble member to be subjected to the crosslinking reaction. By using the amount of use in this range, the chemical mechanical polishing pad 10 which suppresses the occurrence of scratches in the chemical mechanical polishing step can be obtained. Further, the crosslinking can be performed once for all the materials constituting the water-insoluble material. Further, a part of the material constituting the water-insoluble material may be cross-linked and then mixed with the remaining portion. Further, a plurality of cross-linking materials of 97105535 13 200845170 may be mixed and cross-linked by the chemical crosslinking method. In the case of the second method, the mixture of the organic materials of the _ part by = cross-linking is simply obtained by the crosslinking condition of the second method or by the cross-linking operation of the radiation cross-linking. Non-(1) water-insoluble parts In order to suppress (8) the affinity with water-soluble particles (8) and the (8) dispersibility of water-soluble particles in the water-insoluble material, an appropriate compatibilizing agent may be contained. Here, as the compatibilizing agent, for example, An ion-based surfactant, a coupling agent, etc. (Β) Water-soluble particles (Β) water-soluble particles are contained in a chemical mechanical polishing pad, and are separated from a water-insoluble material by contact with a chemical mechanical water dispersion. The formation of the pores 'in addition' in the water-insoluble material has an effect of increasing the hardness of the polishing substrate of the chemical mechanical polishing pad U, and achieving the Shore D hardness of the above-mentioned polishing substrate. The above-mentioned detachment is performed by chemical mechanical polishing. It is produced by dissolution or swelling caused by contact with water or a water-based mixed medium contained in the dispersion. (Β) Water-soluble particles are preferably used to ensure the hardness of the polishing layer 11 of the chemical mechanical polishing pad 1〇. It is a medium entity. Therefore, the water-soluble particles are particularly preferably used in the chemical mechanical polishing pad 10 to ensure sufficient entrapment of the hardness in the entity. The material constituting the (Β) water-soluble particles is not particularly The limitation is, for example, 97105535 200845170 2 water-soluble particles and inorganic water-soluble particles. As lactose, glycerol stems / '((such as starch, dextrin, cyclodextrin, etc.), shell, poly-b, poly B-Women's Phase, Polyacrylic Acid, Ethylene Oxide, Water-Solubility, Dimming · Servative # ^ <This is a special resin, bismuth polyisoprene, stone weathering and isoprene a copolymer or the like. The above-mentioned inorganic water-soluble particles may be, for example, potassium acid, potassium silicate, potassium carbonate, hydrogen carbonate, potassium chloride, orthostatic acid, etc. Among them, preferably The organic water-soluble ',:,, and polysaccharide' is more preferably a cyclodextrin, and particularly preferably a stone-cyclodextrin. These water-soluble particles can be used alone or in combination of two or more kinds. Further, it may be a kind of water-soluble particles ' formed of a predetermined material' or more than 42 kinds of water-soluble particles formed of different materials. The average particle diameter of the water-soluble particles (B) is preferably 〇 i 5 〇〇 #m, more preferably 0.5 to 100/zni. By (B) water-soluble particles having a particle diameter in this range, (the size of the pores due to the detachment of the (8) water-soluble particles can be controlled within an appropriate range, whereby a chemical mechanical polishing step can be obtained. At the time, the chemical mechanical polishing water dispersion system has excellent retention ability and polishing speed, and the mechanical strength of the chemical mechanical polishing pad is excellent! (B) The content of the water-soluble particles is relative to (A) the water-insoluble material and B) The total of the water-soluble particles is preferably from 1 to 9 vol%, more preferably from 15 to 6% by volume, still more preferably from 20 to 40% by volume. By (B) the content of the water-soluble particles When it is set to this range, a chemical mechanical polishing pad 1 which is excellent in balance between mechanical strength and polishing speed can be obtained. 97105535 15 200845170 j (B) Water-soluble particles are preferably used in chemical mechanical polishing pad, only solvent: mechanical When the surface layer in contact with the water-based dispersion is ground, y; water is detached, and the inside of the polishing layer 11 does not enter, and the (β) water-soluble particles may be at least one of the outermost portions: the suction is suppressed. Wet outer casing. This outer casing is physically Attached to the water-soluble granules: chemically bonded to the water-soluble particles, and then by the two, = on the water-soluble particles. As a material for forming such a shell, it can be listed as epoxy resin, poly醯 imine, polyamide, poly 7 vinegar, etc. (Π) a material composed of a water-insoluble material and a pore dispersed in the water-insoluble portion, is ground in I 11 4, and is dispersed in the non-aqueous material. In the case of the pores, for example, a foam such as a polyurethane, a ruthenium amide resin, a polyester, a polysulfone or a polyvinyl acetate may be used. The dispersion is dispersed in the water-insoluble material. The average diameter of the pores is preferably 〇.l#m~500#m, more preferably 〇.5~1〇〇#m. The shape of the polishing layer 11 is not particularly limited, and may be, for example, a disk shape or a plurality of It can be appropriately selected in accordance with the grinding device for installing chemical machinery. However, the size and thickness of the polishing layer 11 are not special, and in the case of a disk shape = It can be set to 15Q~ 12G () mm, especially 5 (10) ~ delete coffee, the thickness can be set to 1.0 ~ 5.0 ugly, especially 1.5 ~ 3. 〇 mm. The polishing layer u of the mechanical polishing pad 1 can have a groove on the polishing surface. This groove has the function of maintaining the chemical mechanical polishing aqueous dispersion supplied to the chemical mechanical polishing and uniformly distributing it to the polishing surface. In the above, 97105535 16 200845170 wastes such as grinding dust and a used aqueous dispersion are temporarily retained, and are used as a passage for discharging to the outside. The shape of the groove is not particularly limited, and may be, for example, a spiral shape or a concentric shape. In the present embodiment, the groove preferably has a point-symmetric shape centering on the center portion of the polishing & u, and uniformly applying pressure to the center portion. Howling... Ding, the work π is formed from the clever side. Thereby, the mechanical strength can be maintained twice. Further, by forming the non-polishing surface side on the uniform surface, the polishing layer u can maintain the degree of freedom in the region on the polishing surface side U. In addition, the chemical mechanical polishing crucible 10 has a function other than the polishing portion. As a part having other functions, for example, a window for detecting an end point using an optical end point detecting device
=可r述材料··厚度一波長二 波長的光穿透畅G·咖上（錢2%以上）， :=:〜3_nm之間之任-波長的累計穿透率為0.U 則益特別肥一 m p之材枓滿足上述光學特性， 構1:二:使用與上述研磨層11相同的組成。 別限定，又，研磨==:11的製造方法並無特 可預先準備成為化-機朽 =無特別限定。例如， 械研磨塾用組:了升1塾10之研磨層11的化學機 狀後，藉由切削力，开1組成物成形為所需形狀的概略形 田切削加工形成滏笪 风屏等再者，藉由使用形成有成 97105535 17 200845170 =等之圖案的鑄模而將化學機械 ⑽成形1可同時形成研磨層u之概略形狀=進仃 侍到化學機械研磨墊用組、^ ^ ^ v、、 如，可藉由混練機等將既定之法亚無特別限定。例 、 寻將既疋之有機材料等之必專姑祖、仓〜 混練而獲得。作為混練機，可使 ’、仃 輥、捏合機、班伯里π入媸 Α 13者。可舉例如 練機。 擠出機（單轴、多軸）等之混 用於得到含有水溶性粒子之研磨塾1()的含有水溶 之^墊用組成物’例如可將非水溶性基質、水溶性粒 進劑！進行混練而得。但是，通常於混練時係 以 容易，但最好此時之溫度下水溶性 丨肖由呈固體’則無論與非水溶性基質之相溶 、，、’均可依上述較佳之平均粒徑使水溶性粒子分 :。從而’較佳係視所使用之非水溶性基質的加工溫度， 選擇水溶性粒子之種類。 1· 2·接黏層12 本貫施形態之化學機械研磨塾10，係具有設於研磨層 η與研磨裝置定盤13之間的接黏層12。接黏層12係用 於將研磨層11固定於研磨I置定盤13上。&，由於化學 機械研磨墊10係於含有研磨層u中央部之中央區域上具 有無接黏層的區域、亦即具有貫通孔20，故即使在研磨 時對劃11施加過大的壓力，未固定於定盤上之區域 的研磨層將可藉由微小量之伸縮而使壓力分散，緩和壓力 的集中，使賦予於研磨層u上的損傷減輕，而可使研磨 97105535 18 200845170 層長哥命化。 接黏層12係例如可含有黏著片材。 佳為50//m〜250//m。藉由^ 旱度較 柯田具有50/zm以上之厚戶，則π 充分缓和來自研磨層U + Ζ1Τ Λ 又貝J巧 研⑼11之研磨面側的壓力，且藉由且有 250 /z m以下之厚度，則 ^ ^ 、了提众研磨性能不受凹凸影塑 程度的均度厚度之化學機械研磨塾1〇。 〜曰之 之形狀並無特別限定，較佳為以研 央部為重心之圓形或多角形。 r 作為黏著片材之材質，若 t ^ ^ ^ ^ ^ 宗般μ日，丨f从丨 ^保續U固疋於研磨機 疋盤上’則無特別限定，較佳為彈性率較研磨層n低之 丙烯酸系、橡膠系’更具體而言，較佳為丙烯酸系。 黏者片材之接黏強度若為可將化學機械研磨塾固定於 研磨機定盤上，則盔特只丨丨pp A . ττ 、 、、特別限疋，在依JIS Ζ0237規格測定 黏著片材之接黏強度時’接黏強度為期5咖以上、較佳 4N/CM以上、更佳1〇Ν/25_以上。 2·化學機械研磨方法 實施=態之化學機械研磨塾，係安裝於市售之研磨裝置 上，可糟由公知之方法使用於化學機械研磨方法中。而 且可使用此種4匕學機械研磨方》去，而製造例如半導體襄 置。以下，針對使用上述化學機械研磨墊之化學機械研磨 方法的一例子進行說明。 圖2及，3係用於說明本實施形態之化學機械研磨方法 的圖本貝轭形態之化學機械研磨方法中，化學機械研磨 墊10係朝箭頭D方向旋轉。半導體晶圓3〇係保持在固定 97105535 19 200845170 於加壓頭之夾持具（hold )3 μ # ^ -S Ρ ^ aer;U上，精由該加壓頭，而使 其朝則頭B方向旋轉並如箭頭c方向 外側之間的放射方向）搖動山出 Τ ^ ^ ^ . 士 g動〇如此，使半導體晶圓30滑 動，同0讀化學機械研磨墊1〇進行擠壓並予以抿接而押 附’將衆料供給至化學機械研磨塾1〇上進行研磨。 本實施形態之化學機械研磨方法中，由於使用具有區域 2〇的化學機械研磨塾10，故在使半導體晶圓3〇滑動時―， 可使研磨層U朝箭頭Ε方向之非研磨面侧彎曲，故可防 止對中央部附近之溝40施加過大塵力，而長期間保持均 勻之研磨面。 作為可使用實施形態中之化學機械研磨墊而進行化學 機械研磨的被研磨物，可舉例如成為佈線材料的金屬、位 障金屬、絕緣膜等。作為上述金屬，可舉例如鎢、紹及銅 暨含有此等之合金等。作為上述位障金屬，可舉例如鈕、 氮化鈕、鈦、氮化鈦、氮化鎢等。作為上述絕緣膜，可舉 例如：以化學蒸鍍法等之真空製程所形成之氧化矽膜 (PETE0S 膜（Plasma Enhanced-TEOS 膜）、HDP 膜（High= can be described in the material · thickness - wavelength two wavelengths of light through the smooth G · coffee (money 2% or more), : =: ~ 3_nm between the - wavelength cumulative penetration rate of 0. U In particular, the material of the mp mp satisfies the above optical characteristics, and the structure 1:2: the same composition as the above-mentioned polishing layer 11 is used. Further, the manufacturing method of the grinding ==:11 is not particularly prepared in advance and is not specifically limited. For example, the mechanical polishing group: after the chemical mechanism of the polishing layer 11 of 1 to 10 is raised, the workpiece is formed into a desired shape by a cutting force to form a hurricane screen, and the like. By forming the chemical machine (10) by using a mold formed with a pattern of 97105535 17 200845170 =, etc., the outline shape of the polishing layer u can be simultaneously formed = the group of the chemical mechanical polishing pad, the ^ ^ ^ v, , for example The predetermined method is not particularly limited by a kneading machine or the like. For example, it is necessary to find the organic materials, such as the ancestors, and the warehouses. As a kneading machine, it is possible to use a ', a roll, a kneader, or a Banbury. For example, a training machine can be mentioned. An organic solvent-containing composition for obtaining a polishing crucible 1() containing a water-soluble particle, for example, an extruder (uniaxial or multiaxial) can be used, for example, a water-insoluble substrate or a water-soluble granule; Get mixed training. However, it is usually easy to mix, but it is preferable that the water-soluble enthalpy at the temperature at this time is solid, so that it is compatible with the water-insoluble matrix, and can be dissolved in water according to the above preferred average particle diameter. Sex particles: Thus, it is preferred to select the type of water-soluble particles depending on the processing temperature of the water-insoluble substrate to be used. 1· 2· Adhesive layer 12 The chemical mechanical polishing crucible 10 of the present embodiment has an adhesive layer 12 provided between the polishing layer η and the polishing apparatus fixing plate 13. The adhesive layer 12 is used to fix the polishing layer 11 to the polishing I set disk 13. & Since the chemical mechanical polishing pad 10 is provided with a region having no adhesive layer in the central portion including the central portion of the polishing layer u, that is, having the through hole 20, even if excessive pressure is applied to the stroke 11 during polishing, The polishing layer fixed in the area on the fixed plate can disperse the pressure by a small amount of expansion and contraction, alleviate the concentration of the pressure, and reduce the damage imparted to the polishing layer u, and can grind the 97105535 18 200845170 layer long life Chemical. The adhesive layer 12 may, for example, contain an adhesive sheet. Good is 50//m~250//m. By the fact that the dryness is more than 50/zm thicker than Ketian, π sufficiently relaxes the pressure from the side of the polishing surface of the polishing layer U + Ζ1Τ Λ 贝 巧 巧 巧 (9)11, and is less than 250 /zm The thickness of the ^ ^ , the polishing performance of the public is not affected by the degree of unevenness of the degree of chemical mechanical polishing 塾 1 〇. The shape of the 曰 曰 is not particularly limited, and is preferably a circle or a polygon having a center of gravity of the center portion. r is the material of the adhesive sheet, if t ^ ^ ^ ^ ^ is the same as μ, 丨f is 疋 保 保 U U U 疋 疋 ' ' ' 则 则 则 则 则 则 则 则 则 则 则 则 则 则 则 则 则 则 则 则The acrylic type and the rubber type which are low n are more preferably acrylic. If the adhesive strength of the adhesive sheet can be fixed to the polishing machine's plate by chemical mechanical polishing, the helmet is only 丨丨pp A. ττ , , , and especially limited, the adhesive sheet is measured according to JIS Ζ 0237 specification. When the bond strength is reached, the bond strength is 5 coffee or more, preferably 4 N/CM or more, more preferably 1 turn/25_ or more. 2. Chemical mechanical polishing method The chemical mechanical polishing method of the = state is mounted on a commercially available polishing apparatus, and can be used in a chemical mechanical polishing method by a known method. Moreover, it is possible to use, for example, a semiconductor device. Hereinafter, an example of a chemical mechanical polishing method using the above chemical mechanical polishing pad will be described. Figs. 2 and 3 are views for explaining the chemical mechanical polishing method of the embodiment of the chemical mechanical polishing method of the present embodiment, in which the chemical mechanical polishing pad 10 is rotated in the direction of the arrow D. The semiconductor wafer 3 is held at a fixed position of 97105535 19 200845170 on the holding head of the pressing head (hold) 3 μ # ^ -S Ρ ^ aer; U, which is precisely pressed by the pressing head to face the head B The direction of rotation and the direction of the radiation between the outer sides of the arrow c direction) shakes the mountain out ^ ^ ^ . Shi g, so that the semiconductor wafer 30 is slid, and the chemical mechanical polishing pad 1 is pressed and squeezed. Then attach it to 'pump the whole material to the chemical mechanical polishing 塾1〇 for grinding. In the chemical mechanical polishing method of the present embodiment, since the chemical mechanical polishing crucible 10 having the region 2A is used, when the semiconductor wafer 3 is slid, the polishing layer U can be bent toward the non-polishing surface side in the direction of the arrow Ε. Therefore, it is possible to prevent excessive dusting force from being applied to the groove 40 in the vicinity of the center portion, and to maintain a uniform polishing surface for a long period of time. The object to be polished which can be subjected to chemical mechanical polishing using the chemical mechanical polishing pad in the embodiment may, for example, be a metal to be a wiring material, a barrier metal, an insulating film or the like. Examples of the metal include tungsten, copper, and alloys containing the above. Examples of the barrier metal include a button, a nitride button, titanium, titanium nitride, and tungsten nitride. The insulating film may be, for example, a ruthenium oxide film formed by a vacuum process such as a chemical vapor deposition method (PETE0S film (Plasma Enhanced-TEOS film), HDP film (High).
Density Plasma Enhanced-TEOS 膜）、由熱 CVD 法所得之 虱化矽膜等）、於Si〇2中添加了少量硼及磷之硼磷矽酸酯 膜（BPSG膜）、於Si〇2中摻雜了氟之所謂 FSG(Fluorine-doped silicate glass)之絕緣膜、所謂 SiON(Sil icon oxynitride)之絕緣膜、Silicon nitride、 低介電係數之絕緣膜等。 作為上述低介電係數之絕緣膜，可舉例如：於氧、一氧 97105535 20 200845170 化碳、二氧化碳、氮、氨 由使燒氧基錢、錢 ' ϋ等之存在下， 柃其说^ h始 基夕燒、芳基矽烷、矽氣烷、 凡土乳燒等之含石夕化合物 取 所形成的絕緣膜；由聚矽氧：而：之-合體 苯並啊、聚醯亞胺、件半二氮 '聚伸方基驗、聚 介電係㈣之絕緣膜；低 實施形態之化學機械研磨墊，係如上述般，可使用 =圍的化學機械研磨步驟中，尤其適合使用於以銅作^ :線：料之金屬鑲嵌佈線的形成步驟中。以銅作為佈線材 科之金屬鑲嵌佈線的形成步驟’係藉由下述步驟而得到平 坦之金屬鑲嵌佈線：於應形成佈線之部分形成了溝之絕緣 膜的溝部及溝部以外之部分，形成位障金屬層後，使佈線 材料之銅堆積而作成被研磨物，並去除剩餘之銅的步驟 (第1研磨處理步驟），去除溝部位以外之位障金屬的步驟 (第2研磨處理步驟），以及對絕緣膜部分亦進行些許研磨 的步驟（第3研磨處理步驟）。本發明之化學機械研磨墊亦 可使用於用於上述第1〜第3研磨處理步驟中任一步驟的 化學機械研磨步驟。 尚且，上述「銅」係除了純銅之外，亦為銅與鋁、石夕等 之合金，應理解為涵括銅含量為95質量％以上者的概念。 3·變形例 其次，針對本實施形態之變形例進行說明。 3 · 1 ·第1變形例 圖4為表示第1變形例之化學機械研磨塾的剖面圖。第 97105535 21 200845170 1變形例中之化學機 ^ ^ ^ 機械研磨墊110，係於在中央區域A上 形成低接黏層2 2的要駐μ ,^ ^ ^ 要點上，與中央區域Α為空洞之上述 化學機械研磨墊1Q不同。 k 低接黏層2 2係且古> & ^ ^ ^ ^ ^ /、有較接黏層12低之接黏強度，其平面 ..^ Λ ，、直徑為10〜200mm，更佳為20〜100mm。 之材質。-黏層22之材質，可使用與上述接黏層12相同 血Γ此’藉由使化學機械研純1G之接黏層12於含有中 研磨 = ί具有低接黏層22，則可減低化學機械 3 、部之中央區域的龜裂和於研磨面上具有 之缺損的發生頻率。又，在接黏層12為例如由 所形成的情況下，在將研磨層u固定於 置定盤13上時，即使於溆| ^从主 ^ 「便於黏者片材表面上包入空氣，亦可 將包入的空氣集中於 、貝通孔20内部，故可避免墊局部性 地隆起而確保平坦化性能。 〔2係_央_ A之接黏強度為其他區域之接黏強度 的75%以下。藉此，在包入空教 工孔的N况下，可使研磨層11 與接黏層12之間空洞化，而在未包入空氣的情況下，可 維持研磨層11的平坦性。 第1變形例之化學機械研磨塾110之製造方法，並 別限定，化學機械研磨墊110係例如將黏著片材貼附於研 f層之非研磨面上後，形成貫通孔2G，其後將低接黏強 度之黏者片材貼附於中央區域A，藉此可獲得。又，藉由 將預先形成了低接黏強度之區域的黏著片材貼附於心 97105535 22 200845170 層上，而形成化學機械研磨墊11〇亦可。 針對第1變形例之化學機械研磨墊丨丨〇之其他構成，係 與上述化學機械研磨墊1〇相同，故省略其說明。 3 · 2 ·第2變形例 〃圖5為表示第2變形例之化學機械研磨塾中之接黏層的 :面圖帛2變开> 例之化學機械研磨塾中之接黏層別的 貝通孔52，係於平面觀看時呈自中心部朝周邊部之方向 延伸的直線狀的要點上，與僅於中央區域A上具有貫通孔 20之上述化學機械研磨墊10不同。 於圖5中，貫通孔52係具有於平面觀看時呈自令心部 朝周邊部之方向延伸的直線狀，非研磨面之中心部之區域 中’ 2條直線狀之貫通孔52呈交差，其他直線狀之貫通 孔52則未交差◊直線狀之貫通孔52的端部完全達到化學 機械研磨墊外侧之端部。 ^藉由具有如圖5所示之形狀，接黏層5〇可將包入的空 氣趕出至化學機械研磨墊侧面部，並可使固定於研磨裝置 定盤13上後之化學機械研磨墊的研磨面平坦度提升。貫 通孔52之平面形狀為自中心部朝化學機械研磨墊側面之 方向上延伸的複數直線狀，且在複數之直線彼此連續的情 況下，由於可緻密地將空氣趕出，故較佳。 第2變形例中，所謂「中心部」係指以化學機械研磨墊 面上之重心為中心的半徑50min之圓所包圍的區域。直線 狀之非研磨面若為自該「中心部」中之任一點朝周邊部之 方向延伸即可，其形狀可例如為直線狀或圓弧狀或此等之 97105535 23 200845170 組合形狀。 直線狀之貫通孔的數目較佳為4〜64條，更佳為8〜48條。 直線狀之貫通孔可與其他直線狀之貫通孔52連接，亦 可不連接，但並不互相交差。較佳係複數之直線狀貫通孔 52中之2〜32條於上述中心部區域中與其他直線狀之貫通 孔52連接，更佳為2〜16條與其他直線狀之貫通孔52連 - 接。 Γ 另外，複數之直線狀之貫通孔52中，較佳係2〜32條於 上述中心部之區域中不與其他直線狀之貫通孔52連接， 更佳係6〜32條與其他直線狀之貫通孔52連接。直線狀之 貝通孔5 2係可與其他直線狀之貫通孔於中心部以夕卜 域連接。 再者，如圖5所示，於中心部之區域中，與其他直線狀 貫通孔連接之直線狀貫通孔令，於鄰接之2條直線狀貫通 孔之間，可存在屬於自中心部發出而朝向周邊部之直線狀 (貫通孔且於中心部區域令未與其他直線狀貫通孔連接的 •直線狀貫通孔，此種貫通孔最好存在2〜7條。 • 在複數之直線狀貫通孔均自中心部發出，而呈朝周邊部 延伸之面的情況下，直線狀之貫通孔較佳係含有：於中心 部區域中未與其他直線狀貫通孔連接之面；於中心部之區 域中與其他直線狀貫通孔連接的面。 I令心部之區域中，不與其他直線狀貫通孔連接之直線狀 貫通孔，較佳係由距化學機械研磨墊中心1〇〜5〇_之位置 所發出，亚朝周邊部之方向延伸的面，更佳係由距化學機 97105535 24 200845170 械研磨墊中心20〜50mm之位置所發出，並朝周邊部之方向 延伸。 另一方面，複數之直線狀貫通孔中，較佳係自中心部發 出並朝向周邊部之直線狀貫通孔的複數條、與自中心部^ 周邊。p的中途發出之直線狀貫通孔，為自屬於連結化學機 械研磨墊中心與外周的假想直線上的點、且位於自化學機 械研磨墊中心朝向外周為20〜8〇%位置的點發出，更佳為 自位於40〜60%位置的點發出。即使在此情況下，自中心 部朝向周邊部發出之直線狀貫通孔的複數條，較佳係由在 中心部區域中與其他直線狀貫通孔連接之面所構成。 複數之直線狀貫通孔，較佳係於化學機械研磨墊之非研 磨面表面上，配置為更均等。構成直線狀貫通孔之半徑上 的位置（亦即，距直線狀貫通孔之非研磨面中心的距I) 了與複數條之直線狀貫通孔一致，亦可不同。 各個直線狀貫通孔之平面觀看時之線寬，較佳為〇1咖 以上、更佳0.1〜5mm、再更佳0.2〜3mm。藉由作成此種形 狀之直線狀貫通孔，則可作成研磨速度及刮痕減低效果、 研磨耐久性優越的化學機械研磨塾。 尚且，於圖5中，雖有貫通孔之條數和形狀與上述較佳 條數及形狀不一致的情況，但圖5為概略圖，應理解上述 條數及形狀係較佳。 第2變形例之化學機械研磨墊的其他構成，由於與上述 化學機械研磨墊1 〇相同，故省略其說明。 3· 3·第3變形例 97105535 25 200845170 第2變形例中，貫甬 朝周邊部之方向延伸的直線狀係=面觀看時呈自中心部 例之接黏層6。中，=1但如圖6示般，第3變形 數個的環、或複數個的多角 1之平面觀看時的形狀可為複 二變形例之化學機械研磨墊中之接黏層 =面m變形例之化學機械研磨墊中，貫通孔 + 時之形狀為由複數㈣環所形成。 時形狀為複數個之環或多角形 亦可為同心或偏心，較佳心置為互相不乂差，但此配置 使貫通孔62之形狀配置^门…化學機械研磨塾係藉由 者更優越。複數個 圓環更佳係配置為同心為由硬數個圓環所形成，此等 上平面觀看時的線寬，較佳為… 形狀=上、:更佳為0.2〜3,藉由作成此種 2之線狀貝通孔’射作成研磨速度 研磨耐久性優越之化學機械研磨f 咸低效果 第3變形例之化學機械 之形狀為複數的同心圓狀。若磨為塾如糸上4貫通孔62 未黏著的部分成為緩衝;)位右=此構成’則黏著片材所 此種緩衝部，則於研磨作c小氣泡。藉由設置 磨裝置定盤之間移動、率！:成::氣泡/黏著片材與研 磨裝置定盤剝離。…成為大乳泡’可防止塾從研 尚且，第3變形例之複數貫通孔62未互相交差並未 97105535 26 200845170 到達化學機械研磨墊外側的端部 關於其他構成，由於與第 同，故省略其說明。 3 · 4 ·弟4變形例 變形例之化學機械研磨墊相 ’係於直線狀貫通孔72配 2變形例之直線狀貫通孔 於第4變形例之接黏層7〇中 置為互相平行的要點上，與第 52不同。 圖7為表示第4變形例之化學機械研磨塾中之接黏層 7〇的平面圖。設於接黏層7G之複數貫通孔72係配置為 互相平行且等間隔。又，各個貫通孔72係未互相交差， 而到達化學機械研磨墊之外側的端部。 關於其他構成，由於與第2變形例之化學機械研磨塾相 同，故省略其說明。 4 ·實施例及比較例 製造本實施形態之實施例之化學機械研磨藝及比較例 之化學機械研磨墊，實施化學機械研磨。研磨 學機械研磨墊之外觀。 ' 4· 1·化學機械研磨墊（a)、（d)之製造（實驗例〇 所，1，2-聚 丁二烯（JSR(股）製，商品名「JSR rb83〇」）72· 8 貝里份及沒-環糊精（橫濱國際生物研究 :刪一，。」’平均粒叫m)27)2=名 藉由調溫為16〇°c之擠出機進行混練2分鐘。其次，加入 PERCUMYL D40」（商品名，日本油脂（股）製，含有4〇質 里/g之過氧化二異丙笨）〇·55質量份（換算為每質量份 97105535 27 200845170 之1，2-聚丁二烯的過氧化二異丙苯量，相當於〇·3〇質量 份），再於12(TC下以60pm進行混練2分鐘，得到化學機 械研磨墊用組成物之顆粒。將此顆粒丨5〇〇克以具備2 5丽 之間隙的鑄模依i7(rc、18分鐘進行加熱而成形，得到直 徑762_、厚2. 5_之圓形平板。將此使用市售之溝加工 機，形成間距2. Omm、溝寬〇. 5mm、深0mm之同心圓狀 - 的溝而付到研磨層。 r 再者於热溝的侧上，貼附與研磨層外形相同形狀（圓 '形)之作為接黏層的積水化學工業公司製之雙面膠帶狀1 品名#5673JX(接黏強度10N/25mm)，得到（Α_υ。 藉由將以此（Α-1)之雙面膠帶中央部為中心的直徑6cm 的圓狀中央區域去除，形成貫通孔，得到化學機械研磨墊 (A-2)。 另外，於此化學機械研磨墊以_2)之貫通孔的所在區 域，再貼附積水化學工業公司製之雙面膠帶、商品名 (#5604TDX(接黏強度5N/25mm) ’得到化學機械研磨墊 ,(A-3) 〇 • 另外，再使用市售之溝加工機，於上述研磨層之無溝侧 上，形成間距2· Omm、溝寬〇· 5mm、深〇· 5mm之同心圓狀 溝後，再貼附作為接黏層之積水化學工業公司製之雙面膠 帶、商品名#5673JX(接黏強度10N/25_)，得到（ο—〗）。 4· 2·化學機械研磨墊（β)、（c)之製造（實施例2、 除了將「4·1·化學機械研磨墊（4)之製造」中之各原料 之種類及使用量設為如表i外，其餘與「41•化學二械研 97105535 28 200845170 磨墊（A)之製造」同樣地實施。於實驗例2中得到化學機 械研磨塾（B+3)’於實驗例3中得到化學機械研磨塾 (C-1〜3) 〇 其中，表1所使用之簡稱係分別表示如下。又，表！中 之數值為質量份。 咄謂^-聚丁二烯⑽⑻製鳴品以皿咄謂」） HF55 :聚苯乙烯（PS JAPAN(股）製，商品名「肝55」） β-CD:石-環糊精（橫濱國際生物研究所（股）製，商品 名「DEXYPEARL·万-40」，平均粒獲15 “ m) D4〇:日本油脂（股）製，商品名「PERCUMYLD40」，含有 40質量％之過氧化二異丙苯 尚且，於化學機械研磨墊（A_2)、（B_2)、（c_2)中，接 黏層係具有貫通孔，於化學機械研磨墊 中，係不具貫通孔。 [表1] 調配t RB830 t例（單 HF55 位：重詈 β -CD 份） D40^ ------- 所得之化學機械研磨墊 實驗例1 72. 8 0 27. 2 0. 55 A-1-3 實驗例2 ~~75~ ~Γδ~ 7- —--__ ί實驗例3 97 0 -------1 -Β-1 〜3 4· 3·化學機械研磨步 將4· 1·及4· 2·中所製造之务凤u 化予機械研磨墊，安裝於化Density Plasma Enhanced-TEOS film, bismuth film obtained by thermal CVD, etc.), a small amount of boron and phosphorus borophosphonate film (BPSG film) added to Si〇2, doped in Si〇2 An insulating film of a fluorine-like FSG (Fluorine-doped silicate glass), an insulating film of SiON (Sil icon oxynitride), Silicon nitride, an insulating film having a low dielectric constant, and the like. As the insulating film having a low dielectric constant, for example, in the presence of oxygen, oxygen, 97105535 20 200845170 carbon, carbon dioxide, nitrogen, ammonia, etc., in the presence of alkoxy money, money, and the like, An insulating film formed by a compound containing a stone compound such as a base kiln, an aryl decane, a decane, or a territories; a polyfluorene: a benzophenone, a phthalimide, a piece Semi-diazo' poly-extension square test, poly dielectric system (four) insulation film; low-implementation chemical mechanical polishing pad, as described above, can be used in the chemical mechanical polishing step, especially suitable for copper ^: Line: The step of forming the metal damascene wiring. In the step of forming a metal damascene wiring using copper as a wiring material, a flat damascene wiring is obtained by forming a portion other than the groove portion and the groove portion of the insulating film formed in the portion where the wiring is to be formed. After the barrier metal layer is formed, the copper of the wiring material is deposited to form a workpiece, and the remaining copper is removed (first polishing treatment step), and the step of removing the barrier metal other than the groove portion (second polishing treatment step) is performed. And a step of slightly grinding the portion of the insulating film (third polishing step). The chemical mechanical polishing pad of the present invention can also be used in the chemical mechanical polishing step used in any of the above-described first to third polishing treatment steps. Further, the above-mentioned "copper" is an alloy of copper, aluminum, and shixi, in addition to pure copper, and is understood to include the concept of a copper content of 95% by mass or more. 3. Modified Example Next, a modified example of the present embodiment will be described. 3 · 1 · First Modification Fig. 4 is a cross-sectional view showing a chemical mechanical polishing crucible according to a first modification. 97105535 21 200845170 1 Chemical machine in the modification ^ ^ ^ Mechanical polishing pad 110 is formed on the central region A to form a low adhesion layer 2 2 to be in the μ, ^ ^ ^ point, and the central region is hollow The above chemical mechanical polishing pad 1Q is different. k low adhesion layer 2 2 series and ancient >& ^ ^ ^ ^ ^ /, has a lower adhesion strength of the adhesive layer 12, its plane .. ^ Λ, diameter is 10~200mm, more preferably 20~100mm. Material. - The material of the adhesive layer 22 can be the same as the above-mentioned adhesive layer 12, which can reduce the chemistry by making the chemical mechanically pure 1G adhesive layer 12 have a low adhesion layer 22 The frequency of cracks in the center of the machine 3 and the part and the occurrence of defects on the grinding surface. Further, in the case where the adhesive layer 12 is formed, for example, when the polishing layer u is fixed to the set disk 13, even if the air is encased in the surface of the adhesive sheet, The enclosed air can also be concentrated inside the Beton hole 20, so that the pad can be prevented from being locally raised to ensure the flattening performance. [2 Series_Central_A bonding strength is 75 of the bonding strength of other areas. % or less. Thereby, in the case of N encased in the empty teaching hole, the polishing layer 11 and the adhesive layer 12 can be hollowed, and the flatness of the polishing layer 11 can be maintained without entrapping air. In the method of manufacturing the chemical mechanical polishing crucible 110 according to the first modification, the chemical mechanical polishing pad 110 is formed by, for example, attaching an adhesive sheet to a non-polishing surface of the grinding layer to form a through hole 2G, and thereafter An adhesive sheet having a low adhesive strength is attached to the central region A, and is obtained by attaching an adhesive sheet having a region in which a low adhesive strength is formed in advance to a layer of 97105535 22 200845170, The chemical mechanical polishing pad 11 may be formed. The chemical mechanical polishing of the first modification is also possible. The other configuration of the crucible is the same as that of the above-described chemical mechanical polishing pad 1A, and the description thereof is omitted. 3 · 2 · Second modification example FIG. 5 is an adhesive layer in the chemical mechanical polishing crucible of the second modification. The top surface of the chemical mechanical polishing crucible is a linear point which extends from the center portion toward the peripheral portion when viewed in plan. Unlike the chemical mechanical polishing pad 10 having the through hole 20 only in the central region A. In FIG. 5, the through hole 52 has a linear shape extending from the center of the core toward the peripheral portion when viewed in plan, In the region of the center portion of the polished surface, the two straight through holes 52 intersect, and the other straight through holes 52 are not intersected. The end of the straight through hole 52 completely reaches the end of the chemical mechanical polishing pad. By having the shape shown in FIG. 5, the adhesive layer 5〇 can drive out the entrapped air to the side surface of the chemical mechanical polishing pad, and can be chemically polished after being fixed on the polishing apparatus fixing plate 13. The flat surface of the pad is raised in flatness. The through hole 52 The planar shape is a plurality of linear shapes extending from the center portion toward the side surface of the chemical mechanical polishing pad, and when the plurality of straight lines are continuous with each other, it is preferable to evacuate the air densely. Therefore, in the second modification The term "central portion" refers to a region surrounded by a circle having a radius of 50 minutes centered on the center of gravity of the chemical mechanical polishing pad. The linear non-polishing surface may extend from any of the "central portions" toward the peripheral portion, and its shape may be, for example, a linear shape or an arc shape or a combination of the shapes of 97105535 23 200845170. The number of straight through holes is preferably 4 to 64, more preferably 8 to 48. The straight through holes may or may not be connected to other linear through holes 52, but may not intersect each other. Preferably, 2 to 32 of the plurality of linear through-holes 52 are connected to the other linear through-holes 52 in the central portion, and more preferably 2 to 16 are connected to the other linear through-holes 52. . Further, in the plurality of linear through-holes 52, preferably 2 to 32 are not connected to the other linear through-holes 52 in the region of the central portion, and more preferably 6 to 32 and other straight lines. The through holes 52 are connected. The linear shell hole 5 2 can be connected to other central through holes at the center portion. Further, as shown in FIG. 5, in the region of the center portion, the linear through-holes connected to the other linear through-holes may be emitted from the center portion between the two adjacent straight through-holes. Straight-line through-holes that are not linearly connected to the peripheral portion and are not connected to other linear through-holes in the central portion, and preferably have 2 to 7 such through-holes. In the case where the surface extends toward the peripheral portion, the linear through-hole preferably includes a surface that is not connected to the other linear through-holes in the central portion; in the central portion a surface that is connected to other linear through-holes. The linear through-hole that is not connected to other linear through-holes in the region of the core is preferably 1 to 5 inches from the center of the chemical mechanical polishing pad. The surface that extends in the direction of the periphery of the Asian-era is preferably 20 to 50 mm away from the center of the mechanical polishing pad 97105535 24 200845170, and extends toward the peripheral portion. On the other hand, the plural straight line shape The through hole is preferably a plurality of linear through holes that are emitted from the center portion and are directed toward the peripheral portion, and a linear through hole that is formed in the middle of the center portion from the center portion of the center portion, and is a center of the bonded chemical mechanical polishing pad. It is emitted from a point on the imaginary straight line on the outer circumference and at a position from the center of the chemical mechanical polishing pad toward the outer circumference of 20 to 8 %, more preferably from a point located at 40 to 60%. Even in this case, The plurality of linear through-holes that are emitted from the center portion toward the peripheral portion are preferably formed by a surface that is connected to other linear through-holes in the central portion. The plurality of linear through-holes are preferably chemical mechanical. The surface of the non-polishing surface of the polishing pad is arranged to be more uniform. The position on the radius of the linear through-hole (that is, the distance I from the center of the non-polishing surface of the linear through-hole) is linearly connected to the plurality of lines. The hole width is uniform or different. The line width when viewed in plan view of each linear through hole is preferably 〇1 coffee or more, more preferably 0.1 to 5 mm, still more preferably 0.2 to 3 mm. By making a linear shape of such a shape Through The through hole can be used as a chemical mechanical polishing crucible having a polishing rate and a scratch reducing effect and excellent polishing durability. Further, in FIG. 5, the number and shape of the through holes do not coincide with the preferred number and shape. In the case of Fig. 5, it is to be understood that the number and shape of the chemical mechanical polishing pad of the second modification are the same as those of the chemical mechanical polishing pad 1 ,. 3. Third Modification 97105535 25 200845170 In the second modification, the straight line extending in the direction of the peripheral portion is viewed from the surface of the adhesive layer 6 in the center portion. 6 shows that the shape of the third deformed ring or the plurality of polygonal corners 1 can be the chemical mechanical polishing pad in the chemical mechanical polishing pad of the second modified example. In the middle, the shape of the through hole + is formed by a complex (four) ring. The ring or polygon having a plurality of shapes may be concentric or eccentric, and preferably the heart is not inferior to each other, but this arrangement allows the shape of the through hole 62 to be configured. The chemical mechanical polishing system is superior. . Preferably, the plurality of rings are configured to be concentrically formed by a plurality of rings, and the line width when viewed in the upper plane is preferably... shape = upper, more preferably 0.2 to 3, by making this The linear bead hole of the second type is produced as a polishing rate. The chemical mechanical polishing is excellent in durability. The salty low effect The chemical mechanical shape of the third modification is a plurality of concentric shapes. If the grinding is performed, for example, the portion where the 4 through-holes 62 are not adhered serves as a buffer; and if the position is right = the configuration is such that the buffer portion of the sheet is adhered, the small bubbles are formed by grinding. By setting the grinding device to move between the plates, the rate! :Make::The bubble/adhesive sheet is peeled off from the grinding device. ...becoming a large emulsion" can prevent the 塾 from proceeding, and the plurality of through holes 62 of the third modification do not intersect each other. 97105535 26 200845170 The end reaching the outside of the chemical mechanical polishing pad is different from the other components. Its description. 3 · 4 · The fourth embodiment of the modified example of the chemical mechanical polishing pad phase is formed in the linear through-hole 72. The linear through-holes of the modified example are placed parallel to each other in the adhesive layer 7 of the fourth modification. The point is different from the 52nd. Fig. 7 is a plan view showing an adhesive layer 7A in a chemical mechanical polishing crucible according to a fourth modification. The plurality of through holes 72 provided in the adhesive layer 7G are arranged parallel to each other and at equal intervals. Further, each of the through holes 72 does not intersect each other and reaches the end portion on the outer side of the chemical mechanical polishing pad. Since the other configuration is the same as that of the chemical mechanical polishing boring of the second modification, the description thereof will be omitted. 4. Examples and Comparative Examples A chemical mechanical polishing pad of the examples of the present embodiment and a chemical mechanical polishing pad of a comparative example were produced, and chemical mechanical polishing was carried out. Grinding the appearance of a mechanical polishing pad. '4·1·Manufacture of chemical mechanical polishing pads (a) and (d) (Experimental example, 1,2-polybutadiene (manufactured by JSR), trade name "JSR rb83〇") 72·8 Berry and no-cyclodextrin (Yokohama International Biological Research: Delete one, "The average grain is called m) 27) 2 = Name is kneaded for 2 minutes by an extruder with a temperature adjustment of 16 °C. Next, add PERCUMYL D40" (trade name, manufactured by Nippon Oil & Fats Co., Ltd., containing 4 〇/g of diisopropyl peroxide) 〇·55 parts by mass (converted to 1,105 parts per mass of 97105535 27 200845170) - The amount of diisopropylbenzene of polybutadiene is equivalent to 〇·3 〇 parts by mass), and further kneaded at 60 pm for 2 minutes at 12 pm to obtain particles of a composition for a chemical mechanical polishing pad. The granules of 5 gram were formed by heating with a mold having a gap of 25 liters by i7 (rc, 18 minutes) to obtain a circular plate having a diameter of 762 Å and a thickness of 2.5 Å. This is a commercially available groove processing machine. , a groove having a pitch of 2. Omm, a groove width of 5 5 mm, and a depth of 0 mm is added to the polishing layer. r Further, on the side of the heat groove, the same shape as the shape of the polishing layer is attached (circular shape) The double-sided tape of the Sekisui Chemical Industry Co., Ltd., which is an adhesive layer, has a double-sided tape type #5673JX (bonding strength 10N/25mm), which is obtained by (Α_υ. By using this (Α-1) double-sided tape central part The central portion of the center having a diameter of 6 cm was removed, and a through hole was formed to obtain a chemical mechanical polishing pad (A-2). In the chemical mechanical polishing pad, the area of the through hole of _2) is attached with a double-sided tape made by Sekisui Chemical Industry Co., Ltd., and the trade name (#5604TDX (bonding strength 5N/25mm)' is used to obtain a chemical mechanical polishing pad. (A-3) 〇• In addition, a commercially available groove processing machine is used to form a concentric circular groove having a pitch of 2·Omm, a groove width of 5·5 mm, and a depth of 5 mm on the grooveless side of the polishing layer. Then, attach double-sided tape made of Sekisui Chemical Industry Co., Ltd. as a bonding layer, trade name #5673JX (bonding strength 10N/25_), and get (ο-). 4· 2·Chemical mechanical polishing pad (β) (c) Production (Example 2, except that the type and amount of each raw material in the "4·1·Chemical Mechanical Polishing Mat (4) Manufacturing" are set as shown in Table i, and the other Ergoyan 97105535 28 200845170 The manufacture of the abrasive pad (A) was carried out in the same manner. Chemical mechanical polishing 塾(B+3)' was obtained in Experimental Example 2, and chemical mechanical polishing 塾 (C-1~3) was obtained in Experimental Example 3. 〇 , , , , 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表(10) (8) 制 品 」 」 ) HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF HF , the product name "DEXYPEARL·W-40", the average grain is 15" m) D4〇: Japanese fat (stock) system, the trade name "PERCUMYLD40", containing 40% by mass of dicumyl peroxide, and in chemical machinery In the polishing pads (A_2), (B_2), and (c_2), the adhesive layer has a through hole, and in the chemical mechanical polishing pad, there is no through hole. [Table 1] Formulation t RB830 t Example (single HF55 position: heavy 詈β-CD part) D40^ ------- Chemical mechanical polishing pad obtained Experimental Example 1 72. 8 0 27. 2 0. 55 A -1-3 Experimental Example 2 ~~75~ ~Γδ~ 7-_--__ ί Experimental Example 3 97 0 -------1 -Β-1 〜3 4·3·Chemical Mechanical Grinding Step 4 · 1· and 4· 2·······························
子機械研磨裝置「ReflexiQ U un LK」（Applied Materials 公司製）之定盤上，對p—TE〇s * a „ ^ 7 二白晶圓進行化學機械研 磨。化學機械研磨之條件係如下述。 97105535 29 200845170 化學機械研磨用水系分散體：JSR股份有限公司製之含 二氧化矽研磨粒之漿料，CMS-1101 水系分散體供給量：300mL/分 疋盤旋轉數：63rpm 模頭旋轉數：6〇rpin 模頭押附壓：扣環壓： 研磨時間：60秒 4· 4·評價 :8psi、膜壓：4. Opsi 進行化學機械研磨後之化學機械研磨墊之外觀評價。將 評價結果示於表2。 97105535 30 200845170 〔(Nl<〕 化學機械研磨後之墊外觀 研磨28片後有研磨溝缺損 研磨20片後有研磨溝缺損 研磨4片後有研磨溝缺損 顰 鵝。 f ^ 5 ! N vg 研磨300片後亦無研磨溝損傷 研磨300片後亦無研磨溝損傷 研磨103片後有研磨溝缺損 研磨300片後亦無研磨溝損傷 研磨239片後有研磨溝缺損 研磨77片後有研磨溝缺損 墊背面之樣態 整面上有雙面膠帶 整面上有雙面膠帶，研磨層之背面有溝 画 S Ή -Μ 121) ^ •6-㈣ L 咪鲶 vg 杯· Φ W 於含有中央部之中央區域上，作成直徑6cm之 圓形之無雙面膠帶的區域，再於無雙面膠帶之 貫通孔區域賦予低接黏強度之雙面膠帶。 墊之種類 r-H 1 0Q ό r-H 1 (XI CsJ 1 PQ ό CO CO ώ CO ό λ3 ί 200845170 如表2所示，針對化學機械研磨墊（A—2)、（B-2)、 (C-2)、（A-3)，以300片完成檢討，但研磨溝均完全未受 到損傷，對研磨裝置定盤之接黏狀態亦良好，並可繼續進 行研磨。又，關於（B-3)、（C-3)亦相對於比較例提升了溝 而于久性。由此等結果確認到，藉由於含有塾背面中央部之 中央區域上形成貫通孔或低接黏強度之接黏層，則可緩和 來自研磨頭所施加的過大負荷，防止因過大負荷對研磨溝 造成之損傷。 相對於此，關於化學機械研磨墊（A—1)、（β-ΐ)、（c —1)， 係發生研磨溝缺損，無法繼續研磨。又，關於化學機械研 磨墊（D-1)，係於20片研磨後未發生研磨溝缺損，但墊從 研磨機定盤剝離，無法繼續研磨作業。推測此係因為研磨 層之背面上具有溝，相對於押附壓之墊變形將大於無溝的 研磨墊，而施加於接黏層之應力變大所致。 由以上可知，藉由本發明將可提供可抑制研磨層之損 傷、製品壽命長之化學機械研磨墊。 4·5·化學機械研磨墊（Ε)之製造（實驗例4) 將1，2-聚丁二烯（JSR(股）製，商品名「jSRRB83〇」）72 2 質量份及/5 -環糊精（橫濱國際生物研究所（股）製，商品名 「DEXY PEARL 0 -100」，平均粒徑 2〇# m)27· 2 質量^份， 藉由調溫為160C之擠出機以6〇rpm進行混練2分鐘。立 次，加入「PERCUMYL D40」（商品名，日本油脂（ 八 含有40質量％之過氧化二異丙苯）〇 722質量份（換算每 100質篁份之1，2-聚丁二烯的過氧化二異丙苯量，相二於 97105535 32 200845170 0.4質量份），再於職下以6()pffl進行混練2分鐘得 到化學機械研磨墊用組成物之顆粒。 =此顆粒於在下盤—部分具有鏡面凸部（長徑59瞧短 徑21職㈣0.6職，凸部中心位於距圓形之塾外形之中心 二随處’通過凸部中心、與構成長徑之邊平行的直線， 形之墊外形的直徑方向平行）的禱模内以i抓進 ‘ 鐘’使其交聯而得到直徑_随、厚2 5_、 『月_研磨面）之一部分被薄化的圓盤狀成形體。其次， =用市售之㈣加工機，上述成形體之研磨面側上形成 間距U咖、溝寬0.5随、深顔之同心圓狀的溝而得 到研磨層。 其後’於研磨層之非研磨面上，將具有圖5所示之自中 ^朝向周邊部之方向呈放射直線狀之寬—、16條之 貫通孔（未塗佈黏著劑之部分）的黏著片材（積水化學工業 公司^之雙面膠帶、膠帶厚度120# m)貼附於非研磨面” t藉此作成貝通孔面積占非研磨面之總面積0. 85%的化 學機械研磨墊（E)。 4 · 6 ·化學機械研磨墊（e )之評價 對化學機械研磨墊⑻以黏著片材面接著安裝於化學機 械研磨裝置「_12」（接原製作所（股）製）之定盤上，以 無圖案之表面上具有PETE0S膜（以四乙基鄰矽酸酯作為 原料’透過作為促進條件之利用電漿的化學氣相成長法而 形成之氧化石夕膜）之直徑200mm之晶圓作為被研磨體，依 以下條件進行化學機械研磨。 97105535 33 200845170 化學機械研磨用水系分散體：JSR股份有限公司』人 二氧化矽研磨粒之漿料，將CMS-1101以離子六认之含 為3倍。 于又換水稀釋 r 水系分散體供給量：200mL/分 疋盤旋轉數·· 70;rpro 模頭旋轉數：63rpm 模頭押附壓：扣環壓·· 8psi、膜壓：4 研磨時間：12〇秒 進之研磨速度、面内均勾性及刮痕數’係如下述般 攸自晶圓端部進入内侧i 〇mm的點起於直徑方向上依 =咖之，隔取49點，對此藉由光學式膜厚計測定；磨 之膜厚，將此等49點之研磨前後之膜厚差平均值作 =2,將此等49點之膜厚差依下式進行計算的』 果作為面内均勻性。 Γ:(Γ性=(膜厚差之標準偏差H(膜厚差之平均錄 曰曰圓：二：係針對研磨後之晶圓被研磨面之全面，使用 曰曰回仏檢查裝置(KLA 一 Teno 「KLA2351」），古十制所u U t就 、」；冲测所生成之刮痕總數。 ;上述化學機械研磨中 均勻性為？ 1〇/ 研磨逮度為200mn/分，面内 面内均;性^又，即使連續研磨850片後，研磨速度、 研磨性能與耐久性 戰的相，可知其維持優越之 97105535 34 200845170 4·7·化學機械研磨墊（F)之製造及評價（實驗例5) 與「4·5·化學機械研磨墊（E)之製造 J俅進仃而形志 研磨層，於該研磨層之非研磨面上，貼附如 有覓15mm、間隔5mm之同心圓狀之貫通孔的雙面黏 〃 材（積水化學公司製、UAX0N)、膠帶厚i6〇#m) / 學機械研磨墊（F)。於化學機械研磨墊（F)中，貫通孔=化 積係占非研磨面之總面積的5. 1%。 面 其次，與「4· 6·化學機械研磨墊（E)之評價」同樣地 價化學機械研磨墊（F)。研磨速度為186nm/分，面内均°句 性為2.3%。又，即使連續研磨7〇〇片後，研磨速度、面1 内均勻性均未確認到有意義的差W，可知其維持優越 磨性能與耐久性。 4.8.化學機械研磨墊（G)之製造及評價（實驗例6) 與「4.5.化學機械研磨墊（£：)之製造」同樣進行而形成 研f層，於該研磨層之非研磨面上，貼附如圖？所示般具 有寬15mm、間隔5mm之平行線狀之貫通孔的雙面黏著/、 =(積水化學公司製、（JAX0N)、膠帶厚HO#"，作成化 學機械研磨墊（G)。於化學機械研磨墊（G)中，貫通孔之面 積係占非研磨面之總面積的5. 1 %。 人，與「4· 6·化學機械研磨墊（e)之評價」同樣地評 價化學機械研磨墊（G)。研磨速度為198nm/分，面内均勻 性為1.8%。又，即使連續研磨73〇片後，研磨速度、面 内均勻性均未確認到有意義的差別，可知其維持優越之研 磨性能與耐久性。 97105535 35 200845170 本實施形態之說明係如上述。本發明並不限定於上述之 實施形態，可進一步進行各種變形。例如，不使用雙面膠 帶，藉由將液狀接黏劑塗佈於研磨劑之被研磨面上，則可 將研磨層固定於研磨裝置定盤上。此情況 中央部不具有接黏層之區域(貫通孔)，則可表 之效果。 另外，本發明中係包括與實施形態所說明之構成實質上 相同之構成（例如，功能、方法及結果為相同的構成，或 目的及結果為相同之構成）。又，本發明中係包括取代實 施形態所說明構成之非本質部份的構成。又，本發明中^系 包括可發揮與實施形態所說明之構成相同之作用效果的/、 構成或可達成相同目的構成。又，本發明係包括於實施形 恶所說明之構成中加入公知技術的構成。 【圖式簡單說明】 圖1為表示本實施形態之化學機械研磨墊的剖面圖。 圖2為用於說明本實施形態之化學機械研磨方法的圖。 圖3為用於說明本實施形態之化學機械研磨方法的圖。 圖4為表示第1變形例之化學機械研磨墊的剖面圖。 、，圖5為表示第2變形例之化學機械研磨墊中之接黏層的 平面圖。 圖6為表示第3變形例 平面圖。 之化學機械研磨墊中之接黏層 的 圖7為表示第 平面圖。 4變形例之化學機械研磨墊中之接黏層的 97105535 36 200845170 【主要元件符號說明】 10、110 化學機械研磨墊 11 研磨層 12 、 50 、 60 、 70 接黏層 13 研磨裝置定盤 20 、 52 、 62 、 72 貫通孔 -22 低接黏層 30 半導體晶圓 '32 夾持具 40 溝 97105535 37The mechanical polishing of p-TE〇s * a „ ^ 7 two white wafers was carried out on a plate of a sub-mechanical polishing apparatus "ReflexiQ U un LK" (manufactured by Applied Materials Co., Ltd.). The conditions of chemical mechanical polishing are as follows. 97105535 29 200845170 Chemical mechanical polishing water dispersion: JSR-containing slurry containing cerium oxide abrasive, CMS-1101 aqueous dispersion supply: 300 mL / minute 旋转 disk rotation number: 63 rpm Die rotation number: 6〇rpin die attach pressure: buckle ring pressure: grinding time: 60 seconds 4·4· evaluation: 8 psi, film pressure: 4. Opsi The appearance of chemical mechanical polishing pad after chemical mechanical polishing. Table 2. 97105535 30 200845170 [(Nl<] The surface of the pad after chemical mechanical polishing is 28 pieces after grinding, and there are grinding groove defects after grinding 20 pieces, there are grinding groove defects after grinding 4 pieces, there is grinding groove defect 颦 goose. f ^ 5 ! N vg After grinding 300 pieces, there is no grinding groove damage. After grinding 300 pieces, there is no grinding groove damage. After grinding 103 pieces, there are grinding groove defects. After grinding 300 pieces, there is no grinding groove damage. After grinding 239 pieces, there are grinding groove defects after grinding 77 pieces. The back surface of the grinding groove defect pad has a double-sided tape on the entire surface of the double-sided tape, and the back surface of the polishing layer has a groove drawing S Ή -Μ 121) ^ • 6-(4) L 鲶 vg cup · Φ W In the central area including the central portion, a circular double-sided tape with a diameter of 6 cm is formed, and a double-sided adhesive tape having a low adhesive strength is applied to the through-hole region without the double-sided tape. Type of pad rH 1 0Q ό rH 1 ( XI CsJ 1 PQ ό CO CO ώ CO ό λ3 ί 200845170 As shown in Table 2, for chemical mechanical polishing pads (A-2), (B-2), (C-2), (A-3), 300 The film was reviewed, but the grinding ditch was completely unaffected, and the bonding state of the grinding device was good, and the grinding was continued. Further, (B-3) and (C-3) were also compared with the comparative example. The groove was improved for a long time. As a result, it was confirmed that the excessive load applied from the polishing head can be alleviated by forming a through hole or a low adhesion adhesive layer in the central portion of the center portion of the back surface of the crucible. To prevent damage to the grinding groove caused by excessive load. In contrast, regarding chemical mechanical research Grinding pads (A-1), (β-ΐ), (c-1), grinding groove defects occur, and grinding cannot be continued. Also, the chemical mechanical polishing pad (D-1) is after 20 pieces of grinding. The grinding groove defect occurred, but the pad was peeled off from the grinding machine platen, and the grinding operation could not be continued. It is presumed that because the groove on the back side of the polishing layer has a groove deformation, the deformation of the pad relative to the urging pressure is larger than that of the grooveless polishing pad, and is applied to The stress of the adhesive layer becomes large. As apparent from the above, according to the present invention, it is possible to provide a chemical mechanical polishing pad which can suppress the damage of the polishing layer and has a long product life. 4·5·Manufacture of chemical mechanical polishing pad (Experimental Example 4) 1,2-polybutadiene (manufactured by JSR (trade name, "jSRRB83〇") 72 parts by mass and /5-ring Dextrin (manufactured by Yokohama International Institute of Biology, trade name "DEXY PEARL 0 -100", average particle size 2〇# m) 27· 2 mass parts, by extruder with a temperature adjustment of 160C 〇 rpm for 2 minutes. For the second time, add "PERCUMYL D40" (trade name, Japanese fat (eight contains 40% by mass of dicumyl peroxide) 〇 722 parts by mass (converted per 100 mass parts of 1,2-polybutadiene) The amount of dicumyl oxide, phase two is 97105535 32 200845170 0.4 parts by mass), and then mixed with 6 () pffl for 2 minutes to obtain particles of the chemical mechanical polishing pad composition. = This granule is in the lower part - part It has a mirror convex part (long diameter 59瞧 short diameter 21 (4) 0.6 position, the center of the convex part is located at the center of the shape of the circle from the top of the circle, 'through the center of the convex part, parallel with the side forming the long diameter, shape In the prayer mode in which the shape of the pad is parallel to the diameter of the pad, the 'clock' is cross-linked to obtain a disk-shaped molded body in which one of the diameter _, the thickness is 5 5 , and the part of the moon _ the surface is thinned. . Next, a commercially available (four) processing machine was used, and a polishing layer was formed on the side of the polished surface of the formed body to form a groove having a pitch of U coffee, a groove width of 0.5, and a deep concentric groove. Then, on the non-polishing surface of the polishing layer, the width of the film from the center to the peripheral portion shown in FIG. 5 is linear, and 16 through-holes (the portion where the adhesive is not applied) 85%的化工机械研磨。 Adhesive sheet (the water-based chemical industry company ^ double-sided tape, tape thickness 120 # m) attached to the non-polishing surface" t Pad (E) 4 · 6 · Evaluation of chemical mechanical polishing pad (e) The chemical mechanical polishing pad (8) is attached to the chemical mechanical polishing device "_12" (manufactured by the original manufacturer) On the disk, the surface of the unpatterned PETE0S film (the oxidized stone film formed by the chemical vapor phase growth method using tetraethyl phthalate as a raw material as a promoting condition) is 200 mm in diameter. The wafer was subjected to chemical mechanical polishing as the object to be polished under the following conditions. 97105535 33 200845170 Chemical mechanical polishing water dispersion: JSR Co., Ltd. A slurry of cerium oxide abrasive grains, which is three times as large as CMS-1101. Diluted with water again r water dispersion supply: 200mL / min disk rotation number · · 70; rpro die rotation number: 63rpm die attach pressure: buckle ring pressure · · 8psi, membrane pressure: 4 grinding time: 12 The grinding speed, the in-plane uniformity, and the number of scratches in the leap second are as follows. From the point where the end of the wafer enters the inner side of the imm, the diameter is in the direction of the coffee, and the interval is 49 points. This is measured by an optical film thickness meter; the film thickness of the grain is made, and the average value of the film thickness difference before and after the polishing of 49 points is made = 2, and the film thickness difference of 49 points is calculated according to the following formula. As in-plane uniformity. Γ: (Γ = = standard deviation H of film thickness difference (average recorded circle of film thickness difference: two: for the full surface of the polished surface of the wafer after polishing, using the 曰曰 仏 inspection device (KLA one Teno "KLA2351"), the ancient ten system u U t, "; the total number of scratches generated by the impulse test. The uniformity of the above chemical mechanical polishing is 1 〇 / grinding arrest is 200mn / min, in-plane Even if it is continuously polished 850 pieces, the grinding speed, the polishing performance and the durability phase are good. 97105535 34 200845170 4·7·Chemical mechanical polishing pad (F) manufacturing and evaluation (experiment Example 5) With the "4·5·Chemical Mechanical Polishing Pad (E), the J-shaped enamel and the abrasive layer are attached to the non-abrasive surface of the polishing layer, and the concentric circles of 15 mm and 5 mm intervals are attached. Double-sided adhesive material of the through-hole (made by Sekisui Chemical Co., Ltd., Uax0N), tape thickness i6〇#m) / Mechanical polishing pad (F). In chemical mechanical polishing pad (F), through hole = chemical product The amount of the total area of the non-abrasive surface is 5.1%. The surface is the same as the "4·6·Chemical mechanical polishing pad (E) evaluation" The chemical mechanical polishing pad (F) has a polishing rate of 186 nm/min and an in-plane angle of 2.3%. Further, even after 7-inch continuous polishing, the polishing rate and the uniformity in the surface 1 are not confirmed to be meaningful. The difference W is known to maintain superior grinding performance and durability. 4.8. Manufacture and evaluation of chemical mechanical polishing pad (G) (Experimental Example 6) The same procedure as in "4.5. Manufacture of chemical mechanical polishing pad (£:)" On the non-polishing surface of the polishing layer, a double-sided adhesion of a parallel hole having a width of 15 mm and a spacing of 5 mm as shown in the figure is attached, and (manufactured by Sekisui Chemical Co., Ltd., (JAX0N) And the area of the through-holes is 5.1% of the total area of the non-abrasive surface. The person, and the "manufacturer", and the "mechanical mechanical polishing pad (G). 4·6·Evaluation of chemical mechanical polishing pad (e) The chemical mechanical polishing pad (G) was similarly evaluated, and the polishing rate was 198 nm/min, and the in-plane uniformity was 1.8%. Further, even after continuously polishing 73 pieces, No significant difference was observed between the polishing rate and the in-plane uniformity. Grinding performance and durability 97105535 35 200845170 The description of the embodiment is as described above. The present invention is not limited to the above embodiment, and various modifications can be made. For example, without using a double-sided tape, the liquid is adhered. When the agent is applied to the surface to be polished of the polishing agent, the polishing layer can be fixed to the polishing device fixing plate. In this case, the central portion does not have a region (through hole) for the adhesive layer, and the effect can be expressed. In the invention, the configuration is substantially the same as the configuration described in the embodiment (for example, the functions, methods, and results are the same, or the objects and the results are the same). Further, the present invention includes a configuration that replaces the non-essential portion of the configuration described in the embodiment. Further, in the present invention, the structure having the same effect as the configuration described in the embodiment can be achieved, or the configuration can be achieved. Further, the present invention includes a configuration in which a known technique is added to the configuration described in the description of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a chemical mechanical polishing pad of this embodiment. Fig. 2 is a view for explaining the chemical mechanical polishing method of the embodiment. Fig. 3 is a view for explaining the chemical mechanical polishing method of the embodiment. 4 is a cross-sectional view showing a chemical mechanical polishing pad according to a first modification. Fig. 5 is a plan view showing an adhesive layer in the chemical mechanical polishing pad of the second modification. Fig. 6 is a plan view showing a third modification. Fig. 7 of the adhesive layer in the chemical mechanical polishing pad shows a first plan view. Adhesive layer in chemical mechanical polishing pad of 4 modified example 97105535 36 200845170 [Explanation of main component symbols] 10, 110 chemical mechanical polishing pad 11 polishing layer 12, 50, 60, 70 adhesive layer 13 polishing device fixing plate 20 52, 62, 72 through hole-22 low adhesion layer 30 semiconductor wafer '32 holder 40 groove 97105535 37