JP2007194320A - Electrostatic chuck device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrostatic chuck device having even the durability of device itself and having no possibility as a pollution source to a tabular sample such as a semiconductor wafer, because the electrostatic chuck device has the excellent durability and extensibility of a junction layer joining an electrostatic chuck member and a base member for controlling a temperature. <P>SOLUTION: The electrostatic chuck device 1 is composed of the electrostatic chuck member 2 consisting of ceramics, the base member 3 for controlling the temperature consisting of a metal and/or the ceramics, and the junction layer 4 joining and unifying these electrostatic chuck member 2 and base member 3 for controlling the temperature. The junction layer 4 contains a silicone resin composition as a cured body, and a surface-coating aluminum nitride (AlN) particles forming a coating layer consisting of silicon oxide (SiO<SB>2</SB>) on a surface. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an electrostatic chuck device, and more specifically, is used suitably when a plate-like sample such as a silicon wafer is fixed in a semiconductor manufacturing device for manufacturing a semiconductor device such as an IC, LSI, VLSI, etc. The present invention relates to an electrostatic chuck apparatus capable of performing various kinds of processing such as plasma processing by fixing the plate-like sample by electrostatic adsorption while efficiently holding the sample at a constant temperature.

Conventionally, in a semiconductor manufacturing process for manufacturing a semiconductor device such as an IC, LSI, VLSI, etc., a plate-like sample such as a silicon wafer is fixed to an electrostatic chuck member having an electrostatic chuck function by electrostatic attraction, and a predetermined sample is obtained. Processing is performed.
For example, when this plate-like sample is subjected to an etching process or the like in a plasma atmosphere, the surface of the plate-like sample becomes high temperature due to the heat of the plasma, and the resist film on the surface tears (bursts).
Therefore, in order to maintain the temperature of the plate-like sample at a desired constant temperature, a flow path for circulating a temperature control cooling medium inside the metal member is formed on the lower surface of the electrostatic chuck member. An electrostatic chuck device in which the temperature adjusting base member is joined and integrated with a silicone adhesive is used.
In this electrostatic chuck device, a temperature adjusting cooling medium is circulated through the flow path of the temperature adjusting base member to perform heat exchange, and the temperature of the plate-like sample fixed on the upper surface of the electrostatic chuck member is set to a desired constant level. Electrostatic adsorption is performed while maintaining the temperature, and various plasma treatments are applied to the plate-like sample.

By the way, in this electrostatic chuck device, in order to maintain the temperature of the plate sample at a desired constant temperature, it is necessary to increase the heat exchange efficiency between the plate sample and the temperature adjusting base member. It is necessary to improve the thermal conductivity of the silicone-based adhesive that is the layer.
Therefore, various high thermal conductive fillers for silicone adhesives, for example, ceramic powders such as alumina (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), aluminum nitride (AlN), and metal powders such as aluminum (Al) It is done to mix.
Among these, aluminum nitride (AlN) powder is suitable as a highly thermally conductive filler because it is excellent in thermal conductivity, halogen-based corrosive gas and its durability against plasma (see, for example, Patent Documents 1 and 2).
JP-A-4-287344 JP2003-258072

However, the conventional electrostatic chuck apparatus in which the electrostatic chuck member and the temperature adjusting base member are joined and integrated using a silicone adhesive containing aluminum nitride (AlN) powder has the following problems. there were.
(1) Since the water resistance of the aluminum nitride (AlN) powder is not sufficient, the silicone adhesive containing the aluminum nitride (AlN) powder does not have sufficient water resistance. In addition, the durability of the electrostatic chuck device is not sufficient.

(2) When the aluminum nitride (AlN) powder is hydrolyzed, aluminum hydroxide (Al (OH) ₃ ) and ammonia (NH ₃ ) are produced, so that the thermal conductivity of the aluminum nitride (AlN) itself decreases, The characteristics of aluminum nitride (AlN) will be lost. Thus, attempts have been made to improve the water resistance of aluminum nitride (AlN) by subjecting the surface of the aluminum nitride (AlN) powder to phosphoric acid treatment. There is a risk of permeation and diffusion, and the phosphorous compound volatilizes in the plasma atmosphere, which causes problems such as the possibility that phosphorus (P) may become a contamination source for a plate-like sample such as a semiconductor wafer.

(3) Since the extensibility of the bonding layer is not sufficient, the relaxation of the thermal stress due to the difference between the thermal expansion coefficient of the electrostatic chuck member and the thermal expansion coefficient of the temperature adjusting base member becomes insufficient, and therefore It is difficult to bond the electrostatic chuck member and the temperature adjusting base member accurately and firmly.
Further, since the durability against the heat cycle load during use is not sufficient, the durability of the electrostatic chuck device is also insufficient.

  The present invention has been made in order to solve the above-described problems, and is excellent in thermal conductivity between the electrostatic chuck member and the temperature adjusting base member, as well as the electrostatic chuck member and the temperature. The durability and extensibility of the bonding layer that joins the base member for adjustment is excellent, so the durability of the device itself is also excellent, and there is no possibility of becoming a source of contamination to a plate-like sample such as a semiconductor wafer. An object is to provide a chuck device.

As a result of intensive studies, the present inventors applied a predetermined surface treatment to the surface of aluminum nitride (AlN) particles mixed in the silicone-based resin composition to form a coating layer made of silicon oxide (SiO ₂ ). It has been found that the above-described problems can be solved by using aluminum nitride (AlN) particles, and the present invention has been completed.

That is, the electrostatic chuck device of the present invention is an electrostatic chuck device in which an electrostatic chuck member made of ceramics and a temperature adjusting base member made of metal and / or ceramics are joined via a joining layer. The bonding layer contains a silicone resin composition and surface-coated aluminum nitride (AlN) particles, and the surface-coated aluminum nitride (AlN) particles are formed on the surface of the aluminum nitride (AlN) particles with silicon oxide (AlN). It is characterized by forming a coating layer made of SiO ₂ .

In this electrostatic chuck device, the bonding layer contains surface-coated aluminum nitride (AlN) particles formed by forming a coating layer made of silicon oxide (SiO ₂ ) on the surface of aluminum nitride (AlN) particles. The water resistance of the surface-coated aluminum nitride (AlN) particles is improved, and the durability and elongation of the bonding layer containing the surface-coated aluminum nitride (AlN) particles are also improved. Therefore, the durability of the electrostatic chuck device itself having this bonding layer is excellent, and there is no possibility of becoming a contamination source for a plate-like sample such as a semiconductor wafer.

The thickness of the coating layer is preferably 0.005 μm or more and 0.05 μm or less.
In this electrostatic chuck device, by making the thickness of the coating layer made of silicon oxide (SiO ₂ ) 0.005 μm or more and 0.05 μm or less, without impairing the thermal conductivity of the aluminum nitride (AlN) particles, It is strongly bonded to the silicone resin composition and has excellent chemical stability against oxygen plasma and the like.

The average particle diameter of the surface-coated aluminum nitride (AlN) particles is preferably 1 μm or more and 20 μm or less.
In this electrostatic chuck device, the average particle diameter of the surface-coated aluminum nitride (AlN) particles is 1 μm or more and 20 μm or less, whereby the bonding layer containing the surface-coated aluminum nitride (AlN) particles and the silicone resin composition is formed. Excellent thermal conductivity, extensibility, and adhesive strength. Moreover, it becomes suitable for workability | operativity on handling because an average particle diameter shall be 1 micrometer or more and 20 micrometers or less.

The content of the surface-coated aluminum nitride (AlN) particles in the bonding layer is preferably 20 volume (vol)% or more and 40 volume (vol)% or less.
In this electrostatic chuck device, the content of the surface-coated aluminum nitride (AlN) particles is 20 vol% or more and 40 vol% or less, so that the bonding layer containing the surface-coated aluminum nitride (AlN) particles and the silicone resin composition is used. Becomes excellent in thermal conductivity, extensibility, and adhesive strength.

It is preferable that a plurality of spacers made of ceramics are disposed on the bonding layer.
In this electrostatic chuck device, the thickness of the bonding layer formed between the electrostatic chuck member and the temperature adjusting base member is accurately controlled by disposing a plurality of ceramic spacers on the bonding layer. As a result, the electrostatic chuck member and the temperature adjustment base can be joined accurately and firmly.

The thickness of the bonding layer is preferably 50 μm or more and 180 μm or less.
In this electrostatic chuck device, by setting the thickness of the bonding layer to 50 μm or more and 180 μm or less, sufficient thermal conductivity is ensured between the electrostatic chuck member and the temperature adjusting base member, and thermal stress relaxation is also sufficient. Thus, the plasma permeability is sufficient.

According to the electrostatic chuck device of the present invention, the bonding layer is a surface-coated aluminum nitride formed by forming a coating layer made of silicon oxide (SiO ₂ ) on the surface of a silicon-based resin composition and aluminum nitride (AlN) particles. Since (AlN) particles are contained, not only the thermal conductivity between the electrostatic chuck member and the temperature adjusting base member is excellent, but also the durability and extensibility of the bonding layer in an oxygen plasma atmosphere are excellent. Can be.
Therefore, the durability of the electrostatic chuck device itself can be dramatically improved, and there is no possibility of becoming a contamination source for a plate-like sample such as a semiconductor wafer.

The best mode of the electrostatic chuck device of the present invention will be described.
This embodiment is specifically described for better understanding of the gist of the invention, and does not limit the present invention unless otherwise specified.

  FIG. 1 is a cross-sectional view showing an electrostatic chuck apparatus according to an embodiment of the present invention. The electrostatic chuck apparatus 1 includes a disk-shaped electrostatic chuck member 2 and a lower part of the electrostatic chuck member 2. The temperature-adjusting base member 3 having a thick disk shape and a bonding layer 4 for bonding and integrating the electrostatic chuck member 2 and the temperature-adjusting base member 3 are configured.

  The electrostatic chuck member 2 has a mounting plate 11 made of ceramics, the upper surface of which is a mounting surface 11a on which a plate-like sample such as a silicon wafer is mounted, and a support made of ceramics that supports the mounting plate 11 from below. The plate 12, the electrostatic adsorption internal electrode 13 and the annular insulating material 14 provided between the mounting plate 11 and the support plate 12, and the support plate 12 so as to be in contact with the electrostatic adsorption internal electrode 13. And the power supply terminal 16 provided in the fixed hole 15.

  A total of four cooling gas introduction holes 17 penetrating in the thickness direction are formed in the mounting plate 11, the support plate 12, and the electrostatic adsorption internal electrode 13 at positions that are rotationally symmetric with respect to the central axis. A large number of projections for supporting a plate-like sample such as a silicon wafer are erected on the mounting surface 11a (not shown), and a cooling gas such as He is placed on the peripheral portion of the mounting surface 11a. A peripheral wall having a width of 1 to 5 mm and a height equal to the above-mentioned protrusion is formed so as not to leak (not shown), and the inside of the peripheral wall is an adsorption region for electrostatically adsorbing the plate-like sample. Yes. A cooling gas such as He is supplied to the gap between the placement surface 11a and the plate-like sample placed on the top surface of the protrusion via the cooling gas introduction hole 17.

The ceramics constituting the mounting plate 11 and the support plate 12 have a volume resistivity of about 10 ¹³ to 10 ¹⁵ Ω · cm, mechanical strength, and durability against corrosive gas and plasma. It is not particularly limited as long as it has, for example, alumina _(Al 2 _{O 3)} sintered body, aluminum nitride (AlN) sintered body, alumina _(Al 2 _{O 3)} - silicon carbide (SiC) composite sintered A ligature etc. are used suitably.
The thickness of the mounting plate 11 and the support plate 12 is preferably 0.3 mm to 3.0 mm, particularly preferably 0.5 mm to 1.5 mm. The reason is that if the thickness of the mounting plate 11 and the support plate 12 is less than 0.3 mm, sufficient withstand voltage cannot be ensured, while if it exceeds 3.0 mm, the electrostatic attraction force decreases. In addition, the thermal conductivity between the plate-like sample placed on the placement surface 11a of the placement plate 11 and the temperature-adjusting base member 3 is lowered, and the temperature of the plate-like sample being processed is preferably constant. This is because it is difficult to maintain the temperature.

Materials constituting the electrostatic adsorption internal electrode 13 include refractory metals such as titanium, tungsten, molybdenum and platinum, carbon materials such as graphite and carbon, and conductive ceramics such as silicon carbide, titanium nitride and titanium carbide. Preferably used. It is desirable that the thermal expansion coefficients of these materials approximate the thermal expansion coefficients of the mounting plate 11 and the support plate 12 as much as possible.
The thickness of the internal electrode 13 for electrostatic adsorption is preferably 5 μm to 200 μm, particularly preferably 10 to 100 μm. The reason is that if the thickness is less than 5 μm, sufficient conductivity cannot be ensured. On the other hand, if the thickness exceeds 200 μm, the plate-like sample placed on the placement plate 11 and the temperature adjusting base member 3 is reduced, it becomes difficult to keep the temperature of the plate-shaped sample being processed at a desired constant temperature, plasma permeability is lowered, and generation of plasma becomes unstable. It is.
The electrostatic adsorption internal electrode 13 having such a thickness can be easily formed by a film forming method such as a sputtering method or a vapor deposition method, or a coating method such as a screen printing method.

  The annular insulating material 14 surrounds the electrostatic adsorption internal electrode 13 and protects the electrostatic adsorption internal electrode 13 from corrosive gas and plasma thereof. The same composition or the main components are made of the same insulating material, and the mounting plate 11 and the support plate 12 are joined and integrated by the insulating material 14 via the internal electrode 13 for electrostatic attraction.

  The power supply terminal 16 is for applying a voltage to the electrostatic adsorption internal electrode 13, and the number, shape, and the like thereof depend on the form of the electrostatic adsorption internal electrode 13, that is, whether it is a monopolar type or a bipolar type. It is determined. The material of the power supply terminal 16 is not particularly limited as long as it is a conductive material having excellent heat resistance, but the thermal expansion coefficient approximates the thermal expansion coefficient of the internal electrode 13 for electrostatic adsorption and the support plate 12. For example, metal materials such as Kovar alloy and niobium (Nb), and various conductive ceramics are preferably used.

The temperature-adjusting base member 3 is a thick disk-shaped member made of metal and / or ceramics, and its casing is also configured to serve as an internal electrode for plasma generation, and contains water, He gas, A flow path 21 for circulating a cooling medium such as N ₂ gas is formed, and the cooling gas introduction hole 17 and the fixing hole 15 are formed in the same manner as the electrostatic chuck member 2.
The temperature adjusting base member 3 has a housing connected to an external high-frequency power source 22, and a power supply terminal 16 whose outer periphery is surrounded by an insulating material 23 is fixed to the fixing hole 15 via the insulating material 23. The power supply terminal 16 is connected to an external DC power supply 24.

The material constituting the temperature adjusting base member 3 is not particularly limited as long as it is a metal excellent in thermal conductivity, conductivity, and workability, or a composite material containing these metals. For example, aluminum (Al) Copper (Cu), stainless steel (SUS), etc. are preferably used. It is preferable that the entire surface of the temperature adjusting base member 3, at least the surface exposed to the plasma, is subjected to an alumite treatment or a resin coating with a polyimide resin.
These alumite treatments or resin coatings improve the plasma resistance of the temperature adjusting base member 3 and also prevent abnormal discharge, thus improving the plasma resistance stability and preventing the occurrence of surface scratches. .

As shown in FIG. 2, the bonding layer 4 includes a surface-coated aluminum nitride (SiC-based resin composition that is a cured product) and a surface-coated aluminum nitride (SiN ₂ ) on which a coating layer made of silicon oxide (SiO ₂ ) is formed. A plurality of spacers 32 made of square-shaped ceramics are arranged approximately regularly at a substantially constant density in the same plane on a composite material 31 containing (AlN) particles.
In FIG. 2, eight are arranged at equal intervals on the outermost concentric circle, eight are arranged at equal intervals on the inner concentric circle, and four are arranged at equal intervals on the innermost concentric circle. These spacers 31 are arranged so as not to be arranged in a straight line.

The spacer 32 is for joining the electrostatic chuck member 2 and the temperature adjusting base member 3 with a constant thickness. As a material thereof, a material having no high dielectric loss (tan δ), for example, Sintered bodies such as alumina (Al ₂ O ₃ ), silicon nitride (Si ₃ N ₄ ), zirconia (ZrO ₂ ) are preferably used. A material having a high dielectric loss, such as a silicon carbide (SiC) sintered body, a metal plate such as aluminum (Al), or a magnetic material such as ferrite (Fe ₂ O ₃ ), is not preferable because it causes discharge.

Hereinafter, the bonding layer 4 will be described in detail.
As the silicone resin composition, a silicone resin described in a known document (Japanese Patent Laid-Open No. 4-287344) can be used.
This silicone resin is a resin excellent in heat resistance and elasticity, and is a silicon compound polymer having a siloxane bond (Si—O—Si). This resin can be represented by the following chemical formula, for example.

但し、Ｒは、Ｈまたはアルキル基（Ｃ_ｎＨ_２ｎ＋１−：ｎは整数）

Here, R is, H or an alkyl group _{(C n H 2n + 1 -} : n is an integer)

但し、Ｒは、Ｈまたはアルキル基（Ｃ_ｎＨ_２ｎ＋１−：ｎは整数）

Here, R is, H or an alkyl group _{(C n H 2n + 1 -} : n is an integer)

  As such a silicone resin, it is particularly preferable to use a silicone resin having a thermosetting temperature of 70 ° C to 140 ° C. When the thermosetting temperature is lower than 70 ° C., when the support plate 12 of the electrostatic chuck member 2 and the temperature adjusting base member 3 are joined, curing starts during the joining process, which hinders the joining work. On the other hand, if the thermosetting temperature exceeds 140 ° C., the thermal expansion difference between the support plate 12 and the temperature adjusting base member 3 cannot be absorbed, and the mounting surface of the mounting plate 11 This is because not only the flatness of 11a is lowered, but also the bonding force between the support plate 12 and the temperature adjusting base member 3 is lowered, and there is a possibility that peeling occurs between them.

  It is preferable to use a silicone resin having a Young's modulus after curing of 8 MPa or less. If the Young's modulus after curing exceeds 8 MPa, the thermal expansion difference between the support plate 12 and the temperature-adjusting base member 3 cannot be absorbed when the bonding layer 4 is subjected to a heat cycle of increasing or decreasing temperature. This is because the durability of the bonding layer 4 decreases.

The surface-coated aluminum nitride (AlN) particles are mixed in order to improve the thermal conductivity of the silicone resin, and a coating layer made of silicon oxide (SiO ₂ ) is formed on the surface of the aluminum nitride (AlN) particles. Therefore, it has excellent water resistance as compared with simple aluminum nitride (AlN) particles that are not surface-coated. Therefore, the durability of the bonding layer 4 containing the silicone resin composition as a main component can be ensured, and thus the durability of the electrostatic chuck device can be dramatically improved.

Aluminum nitride (AlN) particles that are not surface-coated have the following chemical reaction formula:
AlN + 3H ₂ O → Al (OH) ₃ + NH ₃
As shown by, for example, it is hydrolyzed by water in the atmosphere to produce aluminum hydroxide (Al (OH) ₃ ) and ammonia (NH ₃ ), and is nitrided by this aluminum hydroxide (Al (OH) ₃ ) The thermal conductivity of aluminum (AlN) will decrease.
On the other hand, since the surface-coated aluminum nitride (AlN) particles are coated with a coating layer made of silicon oxide (SiO ₂ ) having excellent water resistance, the surface of the aluminum nitride (AlN) particles is aluminum nitride (AlN). Is not hydrolyzed by water in the atmosphere, and the thermal conductivity of aluminum nitride (AlN) is not reduced. Therefore, the durability of the bonding layer 4 is improved, and there is no possibility of becoming a contamination source for a plate-like sample such as a semiconductor wafer.

  Since the surface-coated aluminum nitride (AlN) particles can obtain a strong bonding state with Si in the coating layer and the silicone-based resin composition, it is possible to improve the extensibility of the bonding layer 4. is there. Thereby, the thermal stress resulting from the difference between the thermal expansion coefficient of the support plate 12 of the electrostatic chuck member 2 and the thermal expansion coefficient of the temperature adjusting base member 3 can be relieved. The base member 3 can be joined to the base member 3 accurately and firmly. In addition, the durability against the heat cycle load during use is sufficient, and the durability of the electrostatic chuck device is improved.

The thickness of the coating layer of the surface-coated aluminum nitride (AlN) particles is preferably 0.005 μm or more and 0.05 μm or less, more preferably 0.005 μm or more and 0.03 μm or less.
If the thickness of the coating layer is less than 0.005 μm, the water resistance (moisture resistance) of aluminum nitride (AlN) cannot be sufficiently exhibited, and therefore, simple aluminum nitride (AlN) that is not subjected to surface coating. This is because only the characteristics equivalent to those of the particles can be obtained and chemically unstable. On the other hand, when the thickness of the coating layer exceeds 0.05 μm, the thermal conductivity decreases, and as a result, the mounting plate 11 is mounted. Since the thermal conductivity between the plate-like sample placed on the placement surface 11a and the temperature adjusting base member 3 is lowered, it becomes difficult to keep the temperature of the plate-like sample being processed at a preferable constant temperature. It is.

The average particle diameter of the surface-coated aluminum nitride (AlN) particles is preferably 1 μm or more and 20 μm or less.
When the average particle diameter of the surface-coated aluminum nitride (AlN) particles is less than 1 μm, the contact between the particles may be insufficient, resulting in deterioration of thermal conductivity, and handling when the particle diameter is too fine. This is not preferable because it causes a decrease in workability. On the other hand, if the average particle diameter exceeds 20 μm, when viewed locally, the proportion of the silicone resin composition in the bonding layer decreases, which may lead to a decrease in the extensibility of the bonding layer and the adhesive strength. In this case, the particles are easily detached and pores are formed in the bonding layer, resulting in deterioration of thermal conductivity, extensibility, and adhesive strength.

The content of the surface-coated aluminum nitride (AlN) particles in the bonding layer 4 is preferably 20 vol% or more and 40 vol% or less.
When the content of the surface-coated aluminum nitride (AlN) particles is less than 20 vol%, the thermal conductivity of the bonding layer 4 is lowered, and as a result, the plate-like sample placed on the placement surface 11a of the placement plate 11 and the temperature. This is because the thermal conductivity between the adjusting base member 3 is lowered and it becomes difficult to keep the temperature of the plate-shaped sample being processed at a preferable constant temperature, while the content is 40 vol%. If exceeded, the extensibility of the bonding layer 4 is lowered and thermal stress relaxation becomes insufficient, and the flatness and parallelism of the mounting surface 11a of the mounting plate 11 are not only deteriorated, but also for the support plate 12 and temperature adjustment. This is because the bonding force with the base member 3 is reduced, and there is a risk of peeling between the two.

The thickness of the bonding layer 4 is preferably 50 μm or more and 180 μm or less.
If the thickness of the bonding layer 4 is less than 50 μm, the thermal conductivity between the electrostatic chuck member 2 and the temperature adjusting base member 3 is good, but the thermal stress relaxation is insufficient, If the thickness of the bonding layer 4 exceeds 180 μm, sufficient thermal conductivity between the electrostatic chuck member 2 and the temperature adjusting base member 3 cannot be ensured, and plasma permeability is also reduced. .

  According to the electrostatic chuck device 1, the bonding layer 4 for bonding the electrostatic chuck member 2 and the temperature adjusting base member 3 made of aluminum (Al) is formed by using a silicone resin composition and surface-coated aluminum nitride (AlN). Since it is composed of the composite material 31 containing particles, it is not only excellent in thermal conductivity between the electrostatic chuck member 2 and the temperature adjusting base member 3, but also a silicone resin caused by aluminum nitride (AlN) The decomposition reaction of the composition can be suppressed, and the durability of the bonding layer 4 can be improved. Further, since the extensibility of the bonding layer 4 is excellent, the durability of the electrostatic chuck device 1 can be greatly improved, and there is no possibility of becoming a contamination source for a plate-like sample such as a semiconductor wafer.

Hereinafter, the manufacturing method of the electrostatic chuck device 1 will be described with emphasis on the method of joining the electrostatic chuck member 2 and the temperature adjusting base member 3.
First, the electrostatic chuck member 2 and the temperature adjusting base member 3 are produced by a known method.
On the other hand, a silicone-based resin composition and surface-coated aluminum nitride (AlN) particles whose surfaces are coated with silicon oxide (SiO ₂ ) are mixed at a predetermined ratio, and this mixture is subjected to stirring and defoaming treatment. A mixture of the resin composition and surface-coated aluminum nitride (AlN) particles is prepared. In this case, the viscosity of the silicone-based resin composition may be adjusted with an organic solvent such as toluene or xylene so as to be a predetermined viscosity, for example, 50 to 300 Pa · s, so as to be suitable for coating.

Next, the joining surface of the temperature adjusting base member 3 is degreased and washed using, for example, acetone, and a ceramic spacer 31 having a width of 1 mm, a length of 1 mm, and a thickness of 0.1 mm is placed on the joining surface at room temperature curing type. Adhere using a silicone adhesive.
The spacer 31 is used for joining the electrostatic chuck member 2 and the temperature adjusting base member 3 at a predetermined interval. The number of the spacers 31 and the position at which the spacers 31 are arranged may be appropriate. For example, the diameter is 298 mm. When the electrostatic chuck member 2 and the temperature adjustment base member 3 having a diameter of 298 mm are joined, eight concentric circles on the outermost periphery on the temperature adjustment base member 3 and more appropriately concentric circles that are close to the center direction. 8 are arranged in a concentric manner and further concentrically in the center direction. These spacers 31 are arranged so as not to be arranged in a straight line. Further, four are arranged on a concentric circle in the center direction and four are arranged on a concentric circle on the innermost circumference.

Next, it is allowed to stand at room temperature for a predetermined time to sufficiently cure the room temperature curable silicone adhesive, and a silicone resin composition for forming the bonding layer 4 is applied thereon. The application amount of the silicone-based resin composition is set within a predetermined range in order to bond the electrostatic chuck member 2 and the temperature adjusting base member 3 with a predetermined interval.
For example, when the electrostatic chuck member 2 having a diameter of 298 mm and the temperature adjusting base member 3 having a diameter of 298 mm are bonded, the bonding surface of the temperature adjusting base member 3 includes 20 to 22 g, and the bonding surface of the electrostatic chuck member 2. 15 to 17 g, respectively.

As a method for applying the silicone resin composition, a bar coating method, a screen printing method, or the like can be used in addition to manual application using a spatula or the like.
After the application, the electrostatic chuck member 2 and the temperature adjusting base member 3 are overlapped via the silicone resin composition, and the distance between the electrostatic chuck member 2 and the temperature adjusting base member 3 becomes the thickness of the spacer 31. The excess silicone resin composition is removed. It is preferable to perform the dropping at a temperature at which the fluidity of the silicone resin composition is most obtained.

Further, in order to remove bubbles in the silicone resin composition, the vacuum chucking process may be performed after the electrostatic chuck member 2 and the temperature adjusting base member 3 are superposed on each other. This is effective in obtaining the layer 4.
Thereafter, the silicone resin composition is cured. The curing conditions may be in accordance with the optimal curing conditions for the silicone resin used, and may be pressurized during curing.
The support plate 12 and the temperature adjusting plate member 3 of the electrostatic chuck member 2 thus bonded have a practical bonding strength of 3 MPa or more. The bonding layer 4 has a thermal conductivity of 0.5 W / mK or more and a Young's modulus of 8 MPa or less, and is excellent in thermal conductivity and extensibility.

  The plate-like sample according to the present embodiment is not limited to a silicon wafer. For example, a glass substrate for a flat panel display (FPD) such as a liquid crystal display (LCD), a plasma display (PDP), or an organic EL display. The electrostatic chuck device of this embodiment may be designed in accordance with the shape and size of the substrate.

EXAMPLES Hereinafter, although this invention is demonstrated concretely by Examples 1-3 and Comparative Examples 1-3, this invention is not limited by these Examples.
First, the electrostatic chuck member used in common with Examples 1-3 and Comparative Examples 1-3 was produced as follows.

"Production of support plate"
Vapor-phase synthesis of silicon carbide ultrafine powder having an average particle size of 0.06 μm is performed by plasma CVD method, and 5 parts by weight of the silicon carbide ultrafine powder and 95 parts by weight of aluminum oxide powder having an average particle size of 0.15 μm are uniformly distributed. Mixed. Next, this mixed powder was formed into a disk shape, and then pressed and fired at 1800 ° C. for 4 hours in an argon atmosphere to obtain a disk-shaped alumina-based composite sintered body having a diameter of 298 mm and a thickness of 1.5 mm. Produced. The applied pressure was 40 MPa. Subsequently, a fixing hole (diameter 2.5 mm) for incorporating and fixing a power supply terminal was drilled into the disk-shaped alumina-based sintered body by a diamond drill to obtain a support plate. .

"Production of mounting plate"
A disc-shaped alumina-based sintered body having a diameter of 298 mm and a thickness of 1.5 mm was obtained in accordance with the method for producing the support plate. Next, one surface of the disk-shaped alumina-based sintered body (the surface on which the plate-shaped sample was placed) was polished so that the flatness was 10 μm or less, thereby obtaining a mounting plate made of an alumina-based sintered body.

"Production of power supply terminals"
A mixed powder composed of 40 parts by weight of alumina powder (average particle size 0.15 μm) and 60 parts by weight of tantalum carbide (TaC) powder (average particle size 1 μm) is molded and fired, and can be fixed to the fixing holes of the support plate An alumina-tantalum carbide composite conductive sintered body was obtained and used as a power supply terminal. The sintering conditions were the same as in the case of the support plate.

"Integration"
The power supply terminal was pushed into the fixing hole of the support plate, and fixed. Next, a coating agent containing 40 parts by weight of alumina powder (average particle size 0.15 μm) and 60 parts by weight of tantalum carbide powder (average particle size 1 μm) is screen-printed on a support plate in which the power supply terminals are incorporated and fixed. It was applied by the method and dried to form an internal electrode forming layer for electrostatic adsorption.

  Then, the support plate and the mounting plate are overlapped so that the internal electrode forming layer for electrostatic adsorption is sandwiched and the polishing surface of the mounting plate is the upper surface, and then pressed by a hot press. -These were integrated by heat treatment to produce an electrostatic chuck member. The pressure and heat treatment conditions at this time were a temperature of 1750 ° C. and a pressure of 7.5 MPa. During this pressurization and heat treatment, the electrostatic adsorption internal electrode forming layer was baked to form an electrostatic adsorption internal electrode (thickness 80 μm).

“Preparation of temperature control base material”
A temperature adjusting plate member made of Al having a diameter of 298 mm and a height of 20 mm was cast into a sand mold. A flow path for circulating the refrigerant is formed inside the temperature adjusting plate member.

“Production of spacers”
A square spacer having a width of 1 mm, a length of 1 mm, and a thickness of 0.1 mm was made of an alumina (Al ₂ O ₃ ) sintered body.

"Example 1"
Surface-coated aluminum nitride (AlN) powder TOYALNITE (manufactured by Toyo Aluminum Co., Ltd.) whose surface is coated with silicon oxide (SiO 2) on a silicone resin TSE3221 (manufactured by Toshiba Silicone Co., Ltd.) and the above silicone resin and It mixed so that it might become 25 vol% with respect to the total amount of the surface covering aluminum nitride (AlN) powder, and this mixture was stirred and defoamed, and the silicone type resin composition was obtained. The viscosity of this silicone resin composition was 240 Pa · S. The aluminum nitride powder having an average particle size of 7 to 20 μm was selected using a wet sieve. The thickness of silicon oxide (SiO ₂ ), which is a coating layer of this surface-coated aluminum nitride (AlN) powder, was 0.008 μm.

Next, the bonding surface of the temperature adjusting plate member is sufficiently degreased and washed with acetone, and a spacer made of alumina (Al ₂ O ₃ ) having a width of 1 mm, a length of 1 mm, and a thickness of 0.1 mm is attached to the bonding surface at room temperature. Curable silicone adhesive Shin-Etsu Silicone KE4895T (manufactured by Shin-Etsu Chemical Co., Ltd.) was used for adhesion. The spacers are arranged on the outermost concentric circle at regular intervals, on the inner concentric circle at eight equally spaced intervals, on the inner concentric circle at eight equal intervals, and further on the inner concentric circle at equal intervals. And four at equal intervals on the innermost concentric circle.
Next, the plate member is allowed to stand in the atmosphere for 5 hours to sufficiently cure the room temperature curable silicone adhesive, and then the silicone resin composition is applied to the bonding surface of the electrostatic chuck member using a spatula. 22 g of each was applied to the joint surface of the temperature adjusting base member.

After the application, it was kept under conditions of 50 ° C. and 1 Pa or less for 30 minutes to perform vacuum defoaming treatment. Thereafter, the electrostatic chuck member and the temperature adjusting base member were overlaid, and again held under conditions of 50 ° C. and 1 Pa or less for 30 minutes to perform vacuum defoaming treatment.
Next, the substrate was dropped in the air at 50 ° C. until the distance between the electrostatic chuck member and the temperature adjusting base member became 120 μm. Next, the silicone resin composition was cured by holding at 115 ° C. for 12 hours in the atmosphere, and the electrostatic chuck member and the temperature adjusting base member were joined together to produce the electrostatic chuck device of Example 1.

Further, in order to confirm the properties of the bonding layer, the above-mentioned silicone resin composition was subjected to vacuum defoaming treatment and curing treatment according to Example 1, and the silicone resin composition was made into a width of 100 mm, a length of 100 mm, and a thickness. A sheet-like cured body of Example 1 having a thickness of 1 mm was obtained.
Further, in order to confirm the adhesive strength of the bonding layer, a predetermined amount of the above-mentioned silicone resin composition was applied to an aluminum (Al) plate having a diameter of 40 mm and a height of 20 mm, and then vacuum defoaming according to Example 1. After the treatment, these were superposed and vacuum defoaming treatment and curing treatment were again carried out to produce an adhesive strength test sample of Example 1 having an adhesive layer thickness of 150 μm.

"Example 2"
An electrostatic chuck device was produced according to Example 1.
However, the addition amount of the surface-coated aluminum nitride (AlN) powder was set to 30 vol% with respect to the total volume of the silicone resin and the surface-coated aluminum nitride (AlN) powder.

Further, in order to confirm the characteristics of the bonding layer, the silicone resin composition of Example 2 was prepared according to Example 1, and then subjected to vacuum defoaming treatment and curing treatment according to Example 1, A sheet-like cured body of Example 2 having a width of 100 mm, a length of 100 mm, and a thickness of 1 mm made of the resin composition was obtained.
Further, in order to confirm the adhesive strength of the bonding layer, a predetermined amount of the silicone resin composition of Example 2 was applied to an aluminum (Al) plate having a diameter of 40 mm and a height of 20 mm, and then vacuum was applied according to Example 1. After defoaming treatment, these were superposed and vacuum defoaming treatment and curing treatment were again carried out to produce a sample for adhesion strength test of Example 2 having an adhesive layer thickness of 150 μm.

"Example 3"
An electrostatic chuck device was produced according to Example 1.
However, the addition amount of the surface-coated aluminum nitride (AlN) powder was set to 35 vol% with respect to the total volume of the silicone resin and the surface-coated aluminum nitride (AlN) powder.

Further, in order to confirm the characteristics of the bonding layer, the silicone resin composition of Example 3 was prepared according to Example 1, and then subjected to vacuum defoaming treatment and curing treatment according to Example 1, A sheet-like cured body of Example 3 having a width of 100 mm, a length of 100 mm, and a thickness of 1 mm made of the resin composition was obtained.
Further, in order to confirm the adhesive strength of the bonding layer, a predetermined amount of the silicone-based resin composition of Example 3 was applied to an aluminum (Al) plate having a diameter of 40 mm and a height of 20 mm, and then vacuum was applied according to Example 1. After defoaming treatment, these were superposed and vacuum defoaming treatment and curing treatment were again carried out to produce a sample for adhesion strength test of Example 3 having an adhesive layer thickness of 150 μm.

“Comparative Example 1”
An electrostatic chuck device was produced according to Example 1.
However, the surface-coated aluminum nitride (AlN) powder was changed to a simple aluminum nitride (AlN) powder (manufactured by Mitsui Chemicals, Inc.) whose surface was not coated.

Further, in order to confirm the characteristics of the bonding layer, a silicone-based resin composition of Comparative Example 1 was prepared according to Example 1, and then subjected to vacuum defoaming treatment and curing treatment according to Example 1, A sheet-like cured body of Comparative Example 1 having a width of 100 mm, a length of 100 mm, and a thickness of 1 mm made of a resin composition was obtained.
In order to confirm the adhesive strength of the bonding layer, a predetermined amount of the silicone-based resin composition of Comparative Example 1 was applied to an aluminum (Al) plate having a diameter of 40 mm and a height of 20 mm, and then vacuum was applied according to Example 1. A defoaming treatment was performed, and then, these were superposed and subjected to a vacuum defoaming treatment and a curing treatment again, and a sample for an adhesive strength test of Comparative Example 1 having an adhesive layer thickness of 150 μm was produced.

"Comparative Example 2"
An electrostatic chuck device was produced according to Example 1.
However, the surface-coated aluminum nitride (AlN) powder is changed to a simple aluminum nitride (AlN) powder (made by Mitsui Chemicals, Inc.) whose surface is not coated, and the addition amount of this aluminum nitride (AlN) powder is It was 30 vol% with respect to the total amount of the volume of the silicone resin and aluminum nitride (AlN) powder.

Further, in order to confirm the characteristics of the bonding layer, a silicone-based resin composition of Comparative Example 2 was prepared according to Example 1, and then subjected to vacuum defoaming treatment and curing treatment according to Example 1, A sheet-like cured body of Comparative Example 2 having a width of 100 mm, a length of 100 mm, and a thickness of 1 mm made of a resin composition was obtained.
Further, in order to confirm the adhesive strength of the bonding layer, a predetermined amount of the silicone resin composition of Comparative Example 2 was applied to an aluminum (Al) plate having a diameter of 40 mm and a height of 20 mm, and then vacuum was applied according to Example 1. A defoaming treatment was performed, and thereafter, these were superposed and subjected to a vacuum defoaming treatment and a curing treatment again, and a sample for an adhesive strength test of Comparative Example 2 having an adhesive layer thickness of 150 μm was produced.

“Comparative Example 3”
An electrostatic chuck device was produced according to Example 1.
However, the surface-coated aluminum nitride (AlN) powder is changed to a simple aluminum nitride (AlN) powder (made by Mitsui Chemicals, Inc.) whose surface is not coated, and the addition amount of this aluminum nitride (AlN) powder is It was 35 vol% with respect to the total amount of the volume of the silicone resin and aluminum nitride (AlN) powder.

Further, in order to confirm the characteristics of the bonding layer, a silicone-based resin composition of Comparative Example 3 was prepared according to Example 1, and then subjected to vacuum defoaming treatment and curing treatment according to Example 1, A sheet-like cured body of Comparative Example 3 having a width of 100 mm, a length of 100 mm, and a thickness of 1 mm made of a resin composition was obtained.
Further, in order to confirm the adhesive strength of the bonding layer, a predetermined amount of the silicone resin composition of Comparative Example 3 was applied to an aluminum (Al) plate having a diameter of 40 mm and a height of 20 mm, and then vacuum was applied according to Example 1. A defoaming treatment was performed, and then, these were superposed, and a vacuum defoaming treatment and a curing treatment were again performed, and a sample for an adhesive strength test of Comparative Example 3 having an adhesive layer thickness of 150 μm was produced.

"Evaluation"
Thermal conductivity and extensibility were evaluated using the sheet-like cured bodies made of the silicon resin compositions of Examples 1 to 3 and Comparative Examples 1 to 3.
Moreover, the adhesive strength was evaluated using the adhesive strength test samples of Examples 1 to 3 and Comparative Examples 1 to 3.

Each evaluation method is as follows.
A. Thermal conductivity Measured by a laser flash method at room temperature using a sheet-like cured body.
B. Elongation (Young's modulus)
Using the sheet-like cured body, a sample having an effective length of 20 mm, a length of 50 mm, and a thickness of 1 mm was prepared, and a tensile test was performed on this sample under a load of 1.0 kg / cm ² (0.098 MPa). Young's modulus (MPa) was calculated from the amount of elongation.

C. Elongation (Elongation rate)
Using the sheet-like cured body, a sample having an effective length of 20 mm, a length of 50 mm, and a thickness of 1 mm was prepared, and a tensile test was performed on this sample under a load of 1.0 kg / cm ² (0.098 MPa). The elongation (%) was calculated from the strain amount.
D. Adhesive strength Calculated from the breaking strength using an adhesive strength test sample.
These evaluation results are shown in Table 1.

  According to these evaluation results, in Examples 1 to 3, although the thermal conductivity is not much different from Comparative Examples 1 to 3, the Young's modulus, elongation, and adhesive strength are greatly improved, and the surface is oxidized. By using surface-coated aluminum nitride (AlN) powder coated with silicon (SiO2), good results could be obtained.

Moreover, the sample for a degassing test was produced using the silicon-type resin composition of Example 2 and Comparative Example 2, and the degassing property was evaluated.
The silicon-based resin composition of Example 2 was superposed on an alumina (Al ₂ O ₃ ) -silicon carbide (SiC) composite sintered body piece having a length of 35 mm, a width of 9 mm, and a thickness of 1.5 mm. Before and after, vacuum defoaming treatment and curing treatment were performed, and three test samples having a bonding layer thickness of 150 μm were produced.
Similarly, for the silicon-based resin composition of Comparative Example 2, three test samples having a bonding layer thickness of 150 μm were produced.
Next, three test samples of each of Example 2 and Comparative Example 2 were placed in a vacuum vessel, heated to room temperature to 100 ° C., and evaluated for residual gas analysis (RGA).

According to the evaluation result of this residual gas analysis (RGA), the presence of hydrocarbons was not observed in the test sample of Example 2, whereas the presence of hydrocarbons in the test sample of Comparative Example 2 ( 2 μg / 3 pieces) was observed.
Thereby, when surface-coated aluminum nitride (AlN) powder whose surface is coated with silicon oxide (SiO2) is used, decomposition reaction of the cured silicone resin caused by mere aluminum nitride (AlN) that is not surface-coated can be suppressed. I understood.

The electrostatic chuck device of the present invention includes an electrostatic chuck member made of ceramics and a temperature adjusting base member made of metal and / or ceramics, and a silicone resin composition and a surface covered with silicon oxide (SiO ₂ ). Since it is joined and integrated by the joining layer containing the surface-coated aluminum nitride (AlN) particles, a member made of ceramics and a member made of metal and / or ceramics other than the electrostatic chuck device It can also be applied to joining and integration, and its usefulness is very large.

It is sectional drawing which shows the electrostatic chuck apparatus of one Embodiment of this invention. It is a cross-sectional view which shows the joining layer of the electrostatic chuck apparatus of one Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Electrostatic chuck apparatus 2 Electrostatic chuck member 3 Temperature adjusting base member 4 Bonding layer 11 Mounting plate 11a Mounting surface 12 Support plate 13 Electrostatic adsorption internal electrode 14 Annular insulating material 15 Fixed hole 16 Feeding terminal 17 Cooling Gas introduction hole 21 Flow path 22 High frequency power supply 23 Insulating material 24 DC power supply 31 Composite material 32 Spacer

Claims (6)

An electrostatic chuck device in which an electrostatic chuck member made of ceramics and a temperature adjusting base member made of metal and / or ceramics are joined via a joining layer,
The bonding layer contains a silicone-based resin composition and surface-coated aluminum nitride (AlN) particles,
The surface-coated aluminum nitride (AlN) particles are formed by forming a coating layer made of silicon oxide (SiO ₂ ) on the surface of aluminum nitride (AlN) particles.   The electrostatic chuck apparatus according to claim 1, wherein a thickness of the coating layer is 0.005 μm or more and 0.05 μm or less.   3. The electrostatic chuck device according to claim 1, wherein an average particle diameter of the surface-coated aluminum nitride (AlN) particles is 1 μm or more and 20 μm or less.   4. The electrostatic chuck device according to claim 1, wherein the content of the surface-coated aluminum nitride (AlN) particles in the bonding layer is 20% by volume or more and 40% by volume or less.   5. The electrostatic chuck device according to claim 1, wherein a plurality of spacers made of ceramics are disposed in the bonding layer. 6.   6. The electrostatic chuck device according to claim 1, wherein a thickness of the bonding layer is not less than 50 μm and not more than 180 μm.

Images