JP2007189207A5 - - Google Patents
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- Publication number
- JP2007189207A5 JP2007189207A5 JP2006329465A JP2006329465A JP2007189207A5 JP 2007189207 A5 JP2007189207 A5 JP 2007189207A5 JP 2006329465 A JP2006329465 A JP 2006329465A JP 2006329465 A JP2006329465 A JP 2006329465A JP 2007189207 A5 JP2007189207 A5 JP 2007189207A5
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- film
- nitride semiconductor
- semiconductor light
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 21
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 20
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N al2o3 Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 229910001882 dioxygen Inorganic materials 0.000 claims 3
- 125000004429 atoms Chemical group 0.000 claims 2
- 230000001590 oxidative Effects 0.000 claims 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N Hafnium(IV) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N Niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N TiO Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- XCCANNJCMHMXBZ-UHFFFAOYSA-N hydroxyiminosilicon Chemical compound ON=[Si] XCCANNJCMHMXBZ-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 229910001929 titanium oxide Inorganic materials 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
Claims (15)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006329465A JP4776514B2 (en) | 2005-12-16 | 2006-12-06 | Nitride semiconductor laser device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005363589 | 2005-12-16 | ||
| JP2005363589 | 2005-12-16 | ||
| JP2006329465A JP4776514B2 (en) | 2005-12-16 | 2006-12-06 | Nitride semiconductor laser device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007189207A JP2007189207A (en) | 2007-07-26 |
| JP2007189207A5 true JP2007189207A5 (en) | 2008-04-03 |
| JP4776514B2 JP4776514B2 (en) | 2011-09-21 |
Family
ID=38344122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006329465A Active JP4776514B2 (en) | 2005-12-16 | 2006-12-06 | Nitride semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4776514B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5004597B2 (en) | 2006-03-06 | 2012-08-22 | シャープ株式会社 | Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device |
| JP5430826B2 (en) | 2006-03-08 | 2014-03-05 | シャープ株式会社 | Nitride semiconductor laser device |
| JP5127644B2 (en) * | 2007-09-28 | 2013-01-23 | 三洋電機株式会社 | Nitride semiconductor laser device |
| JP5127642B2 (en) * | 2007-09-28 | 2013-01-23 | 三洋電機株式会社 | Nitride semiconductor laser device |
| JP4621791B2 (en) | 2009-06-11 | 2011-01-26 | シャープ株式会社 | Nitride semiconductor laser device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000021860A (en) * | 1998-07-03 | 2000-01-21 | Hitachi Ltd | Semiconductor device and its manufacture |
| JP4977931B2 (en) * | 2001-03-06 | 2012-07-18 | ソニー株式会社 | GaN semiconductor laser manufacturing method |
| JP2005340625A (en) * | 2004-05-28 | 2005-12-08 | Nichia Chem Ind Ltd | Nitride semiconductor laser device |
-
2006
- 2006-12-06 JP JP2006329465A patent/JP4776514B2/en active Active
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