JP2007189088A - Solid state imaging element and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide the manufacturing method wherein a metallic charge transfer electrode is covered by an excellent film quality interelectrode insulating film while preventing the oxidation of surface of metallic charge transfer electrodes, in the solid state imaging element having the metallic charge transfer electrode. <P>SOLUTION: The solid state imaging element has a photoelectric conversion unit, and a charge transfer unit 40 equipped with a charge transfer electrode 3 for transferring a charge produced in the photoelectric conversion unit. The forming process of the charge transfer electrode 3 comprises a step for forming a first electrode 3a by forming the pattern of a first layer conductive film 3a including a metallic film on the surface of a semiconductor substrate with a gate insulating film 2 formed thereon, a step for forming the silicon film so as to cover the first electrode 3a, a step for forming oxide silicon film by oxidizing the silicon film, a step for forming a second layer conductive film 3b constituting a second electrode 3b on the surface of the semiconductor substrate with the first electrode 3a and the oxide silicon film formed thereon, and a step for forming the second electrode 3b by forming the pattern of the second layer conductive film 3b after forming the second layer conductive film 3b. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device and a method for manufacturing the solid-state imaging device, and more particularly to a high-speed charge transfer electrode.

  A solid-state imaging device using a CCD used for an area sensor or the like has a charge transfer electrode for transferring a signal charge from a photoelectric conversion unit. A plurality of charge transfer electrodes are arranged adjacent to each other on a charge transfer path formed on the semiconductor substrate, and are sequentially driven.

  In the solid-state imaging device, the number of imaging pixels is increasing. As the number of pixels increases, signal charges need to be transferred at high speed, that is, the charge transfer electrodes need to be driven by high-speed pulses, so that the resistance of the charge transfer electrodes needs to be reduced. In addition, an increase in wiring resistance has become a problem due to a reduction in the wiring cross-sectional area accompanying the vertical and horizontal shring. Therefore, a charge transfer electrode containing a metal is used as a method for reducing the resistance. (For example, refer to Patent Document 1 below) Since the charge transfer electrode made of metal has a lower resistance than the charge transfer electrode made of polysilicon, it can be driven at high speed.

  By the way, when a metal electrode is used as a charge transfer electrode of a CCD solid-state imaging device, unlike an ordinary polysilicon charge transfer electrode, an interelectrode insulating film such as a silicon oxide film cannot be formed by plasma oxidation. Therefore, it is necessary to form a silicon oxide film on the upper layer of the metal electrode. However, when a silicon oxide film is formed on the upper layer of the metal electrode, the surface of the metal electrode is easily oxidized. When the surface of the metal electrode is oxidized, the resistance increases due to the reduction of the wiring cross-sectional area, which affects the charge transfer rate.

JP 2004-119996 A

  The present invention has been made in view of the above circumstances, and in a solid-state imaging device having a metal charge transfer electrode, the metal charge transfer electrode surface is prevented from being oxidized, and an inter-electrode insulating film having a good film quality is used. An object of the present invention is to provide a manufacturing method for coating a charge transfer electrode.

  The object of the present invention is a method of manufacturing a solid-state imaging device having a photoelectric conversion unit and a charge transfer unit including a charge transfer electrode for transferring a charge generated in the photoelectric conversion unit, the charge transfer The electrode forming step includes forming a first electrode by forming a pattern of a first layer conductive film including a metal film on the surface of the semiconductor substrate on which the gate insulating film is formed; and A step of forming the silicon film so as to cover; a step of oxidizing the silicon film to form a silicon oxide film; and a second surface on the surface of the semiconductor substrate on which the first electrode and the silicon oxide film are formed. Forming a second layer conductive film constituting the electrode, and forming a second electrode after forming the second layer conductive film and forming a pattern of the second layer conductive film; Achieved by a method of manufacturing a solid-state imaging device including That.

  In the method for manufacturing a solid-state imaging device according to the present invention, a silicon film is formed on the first electrode made of the first conductive film including the metal film, and the silicon film covers the first electrode. After forming the film, the silicon film is selectively oxidized. Therefore, by oxidizing the silicon film, a silicon oxide film that is an interelectrode insulating film can be formed on the surface of the first electrode, instead of oxidizing the first electrode. Thereby, the shape of the first electrode is maintained, and the speed at which the first electrode transfers charges is not affected.

  In addition, the method for manufacturing the solid-state imaging device includes a step of forming a pattern of the second layer conductive film, leaving a region overlapping on the first electrode after the second layer conductive film is formed. Is preferred. Thus, a charge transfer electrode having a two-layer electrode structure that can transfer charges at high speed can be formed.

  In the method for manufacturing a solid-state imaging element, the step of forming the silicon film is preferably a step of forming an amorphous silicon film. Since amorphous silicon does not have significant grain boundaries, the amorphous silicon film can be uniformly oxidized. That is, a silicon oxide film formed by oxidizing an amorphous silicon film can be formed with good control of the film thickness.

  In the method for manufacturing the solid-state imaging device, the step of forming the amorphous silicon film is preferably a step of forming a doped amorphous silicon film. Doped amorphous silicon has a higher oxidation rate than intrinsic amorphous silicon and has no grain boundary. Therefore, the silicon oxide film formed by oxidizing the doped amorphous silicon film oxidizes the surface of the first electrode to be coated. Therefore, a film having excellent film quality can be formed.

  In the method for manufacturing the solid-state imaging element, it is preferable that the step of forming the silicon film is a film forming step by a CVD method. Thus, a dense and highly reliable silicon film can be formed on the first electrode with good control.

  In the method for manufacturing the solid-state imaging device, it is preferable that the step of forming the silicon film is a film forming step by a low pressure CVD method. In this way, a silicon film with good coverage can be formed on the first electrode.

  In the method for manufacturing the solid-state imaging element, the step of forming the silicon oxide film is preferably a plasma oxidation step. In the method for manufacturing a solid-state imaging device according to the present invention, a dense and highly reliable silicon oxide film can be formed with good control by plasma-oxidizing the silicon film covering the first electrode. Thereby, an interelectrode insulating film with high film quality can be obtained.

  In the method for manufacturing the solid-state imaging device, it is preferable that at least the first layer conductive film is an aluminum film. Aluminum is inexpensive, has a small specific resistance, and is easy to finely process.

  Furthermore, the object of the present invention is a solid-state imaging device having a photoelectric conversion unit and a charge transfer unit having a charge transfer electrode for transferring a charge generated in the photoelectric conversion unit, the charge transfer unit Is in contact with a first electrode made of a first layer conductive film including a metal film and an interelectrode insulating film covering the first electrode, and a second electrode made of a second layer conductive film. This is achieved by a solid-state imaging device comprising a charge transfer electrode having two electrodes, wherein the interelectrode insulating film is a silicon oxide film formed by plasma oxidation.

  According to the above configuration, the shape of the first electrode is maintained without being oxidized. Since the shape of the first electrode is maintained, the speed at which the first electrode transfers charges is not affected.

  In the solid-state imaging device, the first layer conductive film or the second layer conductive film is preferably made of aluminum. Aluminum has excellent electrical conductivity and can transfer charges at high speed.

  In the solid-state imaging device, the first layer conductive film or the second layer conductive film is preferably tungsten, tantalum, titanium, molybdenum, nickel, cobalt, platinum, or a silicide thereof. Tungsten or the like often causes high resistance due to oxidation in particular, but by using the interelectrode insulating film of the present invention, a solid-state imaging device with low resistance and high withstand voltage can be provided.

  According to the present invention, in a solid-state imaging device having a metal charge transfer electrode, a method for coating the metal charge transfer electrode with an interelectrode insulating film having a good film quality while preventing oxidation of the surface of the metal charge transfer electrode Can be provided.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(First embodiment)
FIG. 1 is a schematic plan view of a solid-state image sensor for explaining a first embodiment of the present invention. 2 is a cross-sectional view taken along line AA in FIG.
The solid-state imaging device shown in FIGS. 1 and 2 is a solid-state imaging device having a photoelectric conversion unit and a charge transfer unit 40 including a charge transfer electrode 3 that transfers charges generated in the photoelectric conversion unit. The charge transfer unit 40 is in contact with the first electrode 3a made of the first conductive film 3a including the metal film via the interelectrode insulating film 5 covering the first electrode 3a. A solid-state imaging device comprising a charge transfer electrode 3 having a second electrode 3b made of a layer conductive film 3b, wherein the interelectrode insulating film 5 is a silicon oxide film formed by plasma oxidation. And

  A large number of photodiodes 30 serving as photoelectric conversion units are formed on the surface of the n-type silicon substrate 1, and a charge transfer unit for transferring signal charges generated in each photodiode 30 in the column direction (Y direction in FIG. 2). 40 is formed by meandering between a plurality of photodiode columns made up of a plurality of photodiodes 30 arranged in the column direction.

  The charge transfer unit 40 includes a plurality of charge transfer channels 33 formed in the column direction of the surface portion of the silicon substrate 1 corresponding to each of the plurality of photodiode columns, and two layers formed above the charge transfer channel 33. It includes a charge transfer electrode 3 (first electrode 3a, second electrode 3b) having an electrode structure, and a charge read region 34 for reading charges generated in the photodiode 30 to the charge transfer channel 33. The charge transfer electrode 3 has a meandering shape extending in the row direction (X direction in FIG. 2) as a whole between a plurality of photodiode rows composed of a plurality of photodiodes 30 arranged in the row direction. .

  As shown in FIG. 2, a p well layer 9 is formed on the surface portion of the silicon substrate 1, a p region 30a is formed on the surface portion of the p well layer 9, and an n region 30b is formed below the p region 30a. The p region 30a and the n region 30b are formed to constitute the photodiode 30, and signal charges generated in the photodiode 30 are accumulated in the n-type region 30b.

  As shown in FIG. 2, on the right side of the p region 30a, a charge transfer channel 33 composed of an n region is formed at a slight distance. A charge readout region 34 is formed in the p well layer 9 between the n region 30 b and the charge transfer channel 33. Further, a channel stop 32 made of a p + region is provided adjacent to the charge transfer channel 33, and separation from the adjacent photodiode 30 is achieved.

  A gate insulating film 2 is formed on the surface of the silicon substrate 1, and the first electrode 3a and the second electrode having a two-layer electrode structure are formed on the charge readout region 34 and the charge transfer channel 33 via the gate insulating film 2. Electrode 3b is formed. Here, aluminum is used as a material constituting the first electrode. Aluminum is excellent in electrical conductivity, and by using it as a charge transfer electrode, charge can be transferred at high speed. In addition, tungsten, tantalum, titanium, molybdenum, nickel, platinum, or a silicide thereof may be used.

  The first electrode 3a and the second electrode 3b are insulated by a silicon oxide film formed by plasma oxidation as the interelectrode insulating film 5, and a part of the second electrode 3b is formed on the first electrode 3a. Superimposed. According to such a configuration, the shape of the first electrode 3a is maintained without being oxidized. Therefore, there is no influence on the speed at which the first electrode 3a transfers the charge.

  An antireflection film 8 that covers the upper portion of the photodiode 30 and the side wall of the charge transfer electrode 3 is formed, and a silicon oxide film 6 is formed around the charge transfer electrode 3. Further, an intermediate layer 70 is formed thereon. Of the intermediate layer 70, 71 is a light shielding film, 72 is an insulating film made of BPSG (borophospho silicate glass), 73 is an insulating film (passivation film) made of P-SiN, and 74 is a flattening layer made of a transparent resin film. . The light shielding film 71 is provided except for the opening of the photodiode 30. Above the intermediate layer 70, the color filter 50 and the microlens 60 are provided. A flattening layer 61 made of an insulating transparent resin or the like is filled between the color filter 50 and the microlens 60.

  In the solid-state imaging device of the present embodiment, the signal charges generated in the photodiode 30 are accumulated in the n region 30b, and the accumulated signal charges are transferred in the column direction by the charge transfer channel 33, and the transferred signal charges are transferred. Is output from an amplifier (not shown).

  Next, a manufacturing process of the above-described solid-state imaging device will be described. Here, the process of forming the charge transfer electrode 3 will be described in detail with reference to FIGS. The manufacturing process other than the process of forming the charge transfer electrode 3 is the same as that of the conventional solid-state imaging device.

  First, a gate insulating film 2 having a three-layer structure in which a silicon oxide film, a silicon nitride film, and a silicon oxide film are stacked in this order is formed on the surface of an n-type silicon substrate 1. Subsequently, a first layer conductive film 3a constituting the first electrode is formed on the gate insulating film 2. The first layer conductive film 3a is an aluminum film. Aluminum is inexpensive, has a low specific resistance, and can be finely processed. In addition, tungsten, tantalum, titanium, molybdenum, nickel, platinum, or a silicide thereof may be used. Using the desired mask pattern, the first-layer conductive film 3a is selectively removed by etching using the silicon nitride film of the gate insulating film 2 as an etching stopper, and the wiring of the first electrode 3a and the peripheral circuit (not shown) is connected. Perform patterning. Here, it is desirable to use an etching apparatus such as an ECR (Electron Cyclotoron Resonance) system or an ICP (Inductively Coupled Plasma) system.

  Next, as shown in FIG. 3A, a silicon film 5 is formed on the first electrode 3a. The silicon film 5 is a dense and highly reliable film by being formed by the CVD method. Here, the first electrode 3a is made of an aluminum film. In this case, the silicon film 5 is preferably formed by a low temperature CVD method. Temperature conditions shall be 450 to 500 degreeC. By this step, the silicon film 5 can be formed on the first electrode 3a while preventing the oxidation of the surface of the first electrode 3a composed of the easily oxidized aluminum film. In addition, the silicon film 5 may be formed on the first electrode 3a by the low pressure CVD method, thereby forming the silicon film 5 with good coverage.

  After forming the silicon film 5 on the upper layer of the first electrode 3a, as shown in FIG. 3B, the resist pattern 4 is formed by performing exposure using a desired mask by photolithography, developing, and washing with water.

  Next, as shown in FIG. 3C, the silicon film 5 is selectively removed by etching using the resist pattern 4 as a mask and the gate insulating film 2 as an etching stopper. Etching removal of the silicon film 5 is performed using a chemical dry etching (CDE) apparatus. Then, after forming an electrode pattern, the resist pattern 4 is peeled and removed. (Fig. 4 (d))

  Subsequently, as shown in FIG. 4E, the silicon film 5 covering the first electrode 3a is plasma-oxidized, and an interelectrode insulating film 5 made of a silicon oxide film is formed around the first electrode 3a. Form. Here, the temperature of plasma oxidation is about 400 ° C. Ozone oxidation is possible even at 200 ° C.

  After the interelectrode insulating film 5 is formed, a second layer conductive film 3b is formed as shown in FIG. The second layer conductive film 3b is preferably an aluminum film, but may be a film made of tungsten, titanium, molybdenum, nickel, cobalt, platinum, or a silicide thereof. Alternatively, a silicon-based conductive film may be used.

  Next, as shown in FIG. 5G, exposure is performed by photolithography using a desired mask, development and washing are performed, and a resist pattern 7 is formed on the upper layer of the second conductive film.

  Using the resist pattern 7 as a mask pattern and the gate insulating film 2 and the interelectrode insulating film 5 as etching stoppers, the second-layer conductive film 3b is selectively removed by etching to form the second electrode 3b. As shown in FIG. 5 (h), the second electrode 3b is formed leaving a region overlapping with the first electrode.

  After forming the second electrode 3b, the resist pattern 7 is peeled off. Here, it is preferable to use an etching apparatus such as ECR or ICP. (FIG. 5 (i)) In this way, the second electrode 3b is formed, the silicon oxide film 6 is formed around the second electrode 3b by plasma oxidation, and the charge transfer electrode 3 having a two-layer electrode structure is formed. It is formed. Then, a light-shielding film pattern 71 and a BPSG film 72 are formed on the upper layer, reflowed and flattened. Then, an insulating film (passivation film) 73 made of P-SiN and a planarization layer 74 made of a transparent resin film are formed. Thereafter, the color filter 50, the flattening layer 61, the microlens 60, and the like are formed to obtain a solid-state imaging device as shown in FIGS.

  According to the manufacturing method described above, the silicon film is formed on the first electrode 3a, and the silicon film is formed so that the silicon film covers the first electrode 3a. Then, the silicon film is oxidized. In this case, after the silicon film is coated on the first electrode 3a, the silicon film is oxidized, and the silicon oxide film as the interelectrode insulating film 5 is formed without oxidizing the surface of the first electrode 3a. can do. Thereby, the shape of the first electrode 3a is maintained, and the charge transfer rate of the first electrode 3a that enables high-speed transfer of charges is not affected.

  Although a silicon oxide film formed by plasma oxidation of a silicon film was used as the interelectrode insulating film 5, the film thickness is preferably 850 to 1200 mm. That is, the film thickness of the interelectrode insulating film 5 is such that the surface of the first electrode 3a is not oxidized in the film forming process of the interelectrode insulating film 5 itself, and the interelectrode insulating film 5 is formed between the first electrode 3a and the second electrode. It is desirable that the film thickness be such that it plays a role of insulating the electrode 3b.

  In this embodiment, the silicon oxide film functioning as the interelectrode insulating film 5 is formed by plasma oxidation of a silicon film. However, a silicon-based conductive film such as an amorphous silicon film or a doped amorphous silicon film is plasma oxidized. May be formed. Since an amorphous silicon film can be uniformly oxidized, a silicon oxide film formed by oxidizing an amorphous silicon film can be formed with a controlled thickness. The doped amorphous silicon film has a higher oxidation rate than the intrinsic amorphous silicon film, and the silicon oxide film formed by oxidizing the doped amorphous silicon film oxidizes the surface of the first electrode to be coated. Therefore, a film having excellent film quality can be formed.

(Second embodiment)
The solid-state imaging device of this embodiment is different from the solid-state imaging device shown in FIG. 2 only in that the electrode structure of the charge transfer electrode 3 is a single-layer electrode structure. A schematic plan view of the solid-state imaging device of the present embodiment is the same as FIG.

  FIG. 6 is a schematic cross-sectional view of a solid-state imaging device for explaining a second embodiment of the present invention, and is a cross-sectional view taken along the line AA of FIG. In FIG. 6, the same components as those in FIG. The charge transfer electrode 3 of the solid-state imaging device shown in FIG. 6 is that the first electrode 3a and the second electrode 3b are adjacent to each other with the interelectrode insulating film 5 interposed therebetween. The solid-state imaging device shown in FIG. Although it is the same as an image sensor, it differs in that a part of the second electrode 3b is not superimposed on the first electrode 3a.

Hereinafter, of the method for manufacturing the solid-state imaging device shown in FIG. The manufacturing process other than the process of forming the charge transfer electrode 3 is the same as that of the conventional solid-state imaging device.
First, similarly to the solid-state imaging device shown in FIG. 2, the steps shown in FIGS. 3A to 4F are performed. Next, the second layer conductive film 3b is formed by a low pressure CVD method or the like. As the second layer conductive film 3b, an aluminum film or a metal film made of tungsten, titanium, molybdenum, nickel, cobalt, platinum, or a silicide thereof can be used. Also, other silicon-based conductive films such as an amorphous silicon film and a doped amorphous silicon film can be used.

  The film thickness of the second conductive film 3b needs to be formed so as to be about the same as or thicker than the total film thickness of the first electrode 3a and the interelectrode insulating film 5 on the upper layer. Then, a resist is applied, and the entire surface is etched under the condition that the etching rate of the resist and the second layer conductive film 3b is almost the same, and the second layer conductive film 3b above the first electrode 3a is removed. Then, the second conductive film 3b is planarized. Thereafter, a resist pattern 7 for forming an active region and a peripheral circuit is formed. Here, the resist pattern 7 is formed so as to cover a part of the solid-state imaging element forming portion and the peripheral circuit portion. Then, using the resist pattern 7 as a mask, the second-layer conductive film 3b on the photodiode 30 is removed by etching and other patterns of the peripheral circuit are left. Then, by removing the resist by, for example, ashing, the second electrode 3b is formed so as to cover a part of the solid-state imaging element forming portion and the peripheral circuit portion.

  In this way, the second electrode 3b is formed, and the silicon oxide film 6 is formed around the second electrode 3b by plasma oxidation to form the charge transfer electrode 3 having a single-layer electrode structure. Then, a light-shielding film pattern 71 and a BPSG film 72 are formed on the upper layer, reflowed and flattened. Then, an insulating film (passivation film) 73 made of P-SiN and a planarization layer 74 made of a transparent resin film are formed. Thereafter, the color filter 50, the flattening layer 61, the microlens 60, and the like are formed to obtain a solid-state imaging device as shown in FIGS.

  Note that since the charge transfer electrode of the solid-state imaging device of this embodiment has a single-layer electrode structure, it is not necessary to form the insulating film 5 on the entire surface of the first electrode 3a in the step of FIG. It is sufficient to form the insulating film 5 only on the side wall of the first electrode 3a.

  In the first embodiment and the second embodiment, the photoelectric conversion units arranged in the odd rows and the photoelectric conversion units arranged in the even rows are arranged in the direction of approximately ½ rows of the photoelectric conversion portion arrangement pitch of each row. Although a shifted so-called honeycomb-structured solid-state imaging device is illustrated, the present invention can also be applied to a solid-state imaging device in which photoelectric conversion portions are arranged in a square lattice pattern.

  As described above, the solid-state imaging device of the present invention can reduce the resistance of the charge transfer electrode, and is effective for mounting a digital camera or the like having a large number of pixels because it is fast and highly reliable.

Schematic plan view of a solid-state imaging device for explaining an embodiment of the present invention 1 is a schematic cross-sectional view of a solid-state imaging device according to a first embodiment of the present invention. The figure explaining the manufacturing process of the solid-state image sensor concerning 1st embodiment and 2nd embodiment of this invention. The figure explaining the manufacturing process of the solid-state image sensor of 1st embodiment and 2nd embodiment of this invention. The figure explaining the manufacturing process of the solid-state image sensor concerning 1st embodiment of this invention. Sectional schematic diagram of the solid-state image sensor which concerns on 2nd embodiment of this invention.

Explanation of symbols

1 n-type silicon substrate 2 gate insulating film 3a first layer conductive film 3b second layer conductive film 5 interelectrode insulating film

Claims (11)

A method for producing a solid-state imaging device, comprising: a photoelectric conversion unit; and a charge transfer unit including a charge transfer electrode that transfers charges generated in the photoelectric conversion unit,
The charge transfer electrode forming step includes:
Forming a first electrode by forming a pattern of a first conductive film including a metal film on the surface of the semiconductor substrate on which the gate insulating film is formed; and
Forming the silicon film so as to cover the first electrode;
Oxidizing the silicon film to form a silicon oxide film;
Forming a second-layer conductive film constituting a second electrode on the surface of the semiconductor substrate on which the first electrode and the silicon oxide film are formed;
Forming a pattern of the second layer conductive film and forming a second electrode after forming the second layer conductive film. It is a manufacturing method of the solid-state image sensing device according to claim 1,
A method of manufacturing a solid-state imaging device, comprising: forming a pattern of the second layer conductive film, leaving a region overlapping on the first electrode after forming the second layer conductive film. A method for producing a solid-state imaging device according to claim 1 or 2,
The process for forming the silicon film is a method for manufacturing a solid-state imaging device, which is a process for forming an amorphous silicon film. It is a manufacturing method of the solid-state image sensing device according to claim 3,
The process for forming the amorphous silicon film is a method for manufacturing a solid-state imaging device, which is a process for forming a doped amorphous silicon film. It is a manufacturing method of the solid-state image sensing device according to any one of claims 1 to 4,
The process for forming the silicon film is a method for manufacturing a solid-state imaging device, which is a film forming process by a CVD method. It is a manufacturing method of the solid-state image sensing device according to any one of claims 1 to 5,
The process for forming the silicon film is a method for manufacturing a solid-state imaging device, which is a film formation process by a low pressure CVD method. It is a manufacturing method of the solid-state image sensing device according to any one of claims 1 to 6,
The step of forming the silicon oxide film is a method for manufacturing a solid-state imaging device, which is a plasma oxidation step. It is a manufacturing method of the solid-state image sensing device according to any one of claims 1 to 7,
A method for producing a solid-state imaging device, wherein at least the first layer conductive film is an aluminum film. The method for manufacturing a solid-state imaging device of the present invention is a solid-state imaging device having a photoelectric conversion unit and a charge transfer unit including a charge transfer electrode that transfers charges generated in the photoelectric conversion unit,
A second layer conductive film in which the charge transfer portion is in contact with a first electrode made of a first layer conductive film including a metal film via an interelectrode insulating film covering the first electrode A solid-state imaging device comprising a charge transfer electrode having a second electrode comprising:
A solid-state imaging device, wherein the interelectrode insulating film is a silicon oxide film formed by plasma oxidation. The solid-state imaging device according to claim 9,
At least the first electrode is a solid-state imaging device made of aluminum. The solid-state imaging device according to claim 9 or 10,
At least the first electrode is a solid-state imaging device formed of tungsten, tantalum, titanium, molybdenum, nickel, cobalt, platinum, or a silicide thereof.

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