JP2007187567A - Wafer type temperature sensor, method of manufacturing wafer type temperature sensor, and temperature measuring method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wafer type temperature sensor capable of automating a temperature measuring process, and preventing deterioration of measurement accuracy even at high temperatures. <P>SOLUTION: The temperature sensor 11 includes a wafer 12; and a plurality of temperature sensors 13 arranged on each partitioned domain by partitioning the upside of the wafer 12 into a plurality of domains, for detecting the temperature of the upside of the wafer 12. Each temperature sensor 13 includes, as components, a linear expansion body 14, a latch mechanism 15 as a displacement regulation means, a reset circuit 16 as a deregulation means, and a scale 17 as a temperature display means. The linear expansion body 14 has a cantilever shape having a fixed end 14a fixed to the wafer 12 and a free end 14b whose position on the wafer 12 is displaced by a temperature change. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a wafer type temperature sensor, a wafer type temperature sensor manufacturing method, and a temperature measurement method using the wafer type temperature sensor, for example, an apparatus and method for measuring the temperature of a heating plate for heating a wafer.

  In the photolithography process in the manufacture of semiconductor devices, heat treatment (pre-baking) after applying a resist solution to the surface of a semiconductor wafer (hereinafter referred to as “wafer”), or heat treatment (post-posting) after pattern exposure. Various heat treatments such as exposure baking) and cooling treatment performed after each heat treatment are performed by, for example, a heating / cooling apparatus in which the wafer is maintained at a predetermined temperature.

  9 is a longitudinal sectional view of a conventional heating / cooling apparatus 101, FIG. 10 is a transverse sectional view taken along line AA of FIG. 9, and FIG. 11 is a sectional view seen from the right side of FIG.

  In FIG. 9, a cooling plate 103 for cooling and a heating plate 104 for heating are provided side by side in a housing 102 of the heating / cooling device 101. The cooling plate 103 and the heating plate 104 are formed in a thick disc shape. The cooling plate 103 incorporates, for example, a Peltier element (not shown) and can cool the cooling plate 103 to a predetermined temperature.

  Further, below the cooling plate 103, when the wafer is placed on the cooling plate 103, lift pins 105 are provided for supporting and lifting the wafer. The elevating pins 105 are movable up and down with respect to the elevating drive mechanism 106, and are configured to penetrate the cooling plate 103 from below the cooling plate 103 and protrude onto the cooling plate 103.

  On the other hand, the heating plate 104 includes a heater 107 and a heating plate temperature sensor 108. The temperature of the heating plate 104 is determined based on the temperature detected by the controller 109 by the heating plate temperature sensor 108. The set temperature is maintained by controlling the amount. Below the heating plate 104, as with the cooling plate 103, an elevating pin 110 and an elevating drive mechanism 111 are provided, and the elevating pin 110 allows the wafer to be placed on the heating plate 104.

  Also, as shown in FIG. 10, a transfer device 112 is provided between the cooling plate 103 and the heating plate 104 to transfer the wafer to the heating plate 104 and to transfer the wafer from the heating plate 104 to the cooling plate 103. It has been. On the cooling plate 103 side of the casing 102 of the heating / cooling device 101, a transfer port 113 for carrying the wafer into and out of the heating / cooling device 101 is provided.

  In addition, a shutter 114 for maintaining the atmosphere in the heating / cooling apparatus 101 at a predetermined atmosphere is provided at the transport port 113. A transfer arm 115 is provided so as to face the transfer port 113, and when the shutter 114 is opened, the wafer is transferred from the transfer port 113 by the transfer arm 115 and transferred onto the heating plate 104 by the transfer device 112. Is done.

  Such a heating / cooling device 101 measures the temperature distribution of the wafer placed on the heating plate 104 in advance to grasp the temperature characteristics on the heating plate 104, and corrects appropriately based on the result. It is important to uniformly heat the wafer on the heating plate 104. Therefore, a method for measuring the temperature distribution of the wafer on the heating plate 104 has been described in Japanese Patent Application Laid-Open No. 2002-124457 (Patent Document 1).

  According to the publication, as shown in FIG. 12, a wafer type including a wafer 121, a plurality of temperature sensors 122 arranged on the upper surface of the wafer 121, and a cable 123 that outputs temperature information detected by each temperature sensor 122. As shown in FIG. 11, the temperature sensor 120 is placed on the transport device 112, and the cable 123 is connected to the transmission device 116 disposed outside the heating / cooling device 101. When the wafer type temperature sensor 120 is automatically conveyed onto the heating plate 104, temperature information on the wafer 121 detected by each temperature sensor 122 is transmitted to a measuring instrument (not shown) via the transmission device 116, and the wafer 121 is transmitted. The upper temperature distribution can be measured.

  As another example of measuring the temperature distribution on the heating plate 104, as shown in FIG. 13, for example, a transmission device 134 is provided on a temperature measurement wafer 131, and each temperature sensor 132 and the transmission device 134 are connected to a cable 133. The temperature information detected by each temperature sensor 132 is transmitted wirelessly by the wireless wafer-type temperature sensor 130 connected in the above, and a receiving device is provided inside or outside the heating / cooling device 101 to transmit the wirelessly transmitted data. It may be configured to receive.

Furthermore, as another example of measuring the temperature distribution on the heating plate 104, Japanese Patent Laid-Open No. 2002-124457 (Patent Document 1) discloses a first example in which a plurality of temperature sensors 142 are arranged as shown in FIG. An example of a wafer type temperature sensor 140 is described in which a wafer 141 and a second wafer 143 on which a transmission device 144 is arranged are connected by a cable 145.
JP 2002-124457 A

  When the temperature on the heating plate 104 shown in FIGS. 11 and 12 is measured, an operator must manually place the wafer type temperature sensor 120 on the transfer arm 115 and connect the cable 123 to the transmitter 116. Therefore, in order to measure the temperature distribution, it is necessary to temporarily stop the heating / cooling apparatus 101, which is inefficient. In addition, since the cable 123 connecting the transmitter 116 and the wafer temperature sensor 120 passes through the transfer port 113, there is a problem that the heating / cooling device 101 cannot be completely sealed.

  Further, when the wafer type temperature sensor 130 as shown in FIG. 13 is used, since the temperature data detected by each temperature sensor 132 is an analog value, the analog temperature data is digitally transmitted to the transmitter 134. It is necessary to incorporate an A / D converter for conversion into data. However, since the A / D converter has the characteristic that the conversion accuracy deteriorates when the temperature rises, even in the atmosphere where the temperature rises to 250 ° C., even if the temperature can be measured up to about 150 ° C. Cannot be used.

  Further, in the case of the wafer type temperature sensor 140 as shown in FIG. 14, only the temperature measurement wafer 141 is placed on the heating plate 104 and the information transmission wafer 143 is separated from the temperature measurement wafer 141. Since it can be separated from the heating plate 104, the conversion accuracy of the A / D converter built in the transmission device 144 does not deteriorate due to the high temperature.

  However, when the wafer type temperature sensor 140 is transported into the heating / cooling device 101, two automatic transport means for transporting the temperature measuring wafer 141 and the information transmitting wafer 143 are required, and the existing transport device 112 and There is a problem that the transfer arm 115 cannot be used.

  Accordingly, an object of the present invention is to provide a wafer type temperature sensor that can automate the temperature measurement process and that does not deteriorate the measurement accuracy even at high temperatures, a method for manufacturing the wafer type temperature sensor, and a temperature using the wafer type temperature sensor. It is to provide a measurement method.

  A wafer type temperature sensor according to the present invention includes a wafer, and a plurality of temperature sensors that divide the upper surface of the wafer into a plurality of regions and are arranged in each of the divided regions. The plurality of temperature sensors include a fixed end fixed to the wafer, a linear expansion body having a free end whose position on the wafer is displaced by a temperature change, and a displacement restricting means for restricting the displacement of the free end in the fixed end direction. And have.

  The wafer type temperature sensor having the above-described configuration discriminates the temperature from the expansion amount of the linear expansion body, and therefore does not require a circuit having low heat resistance for temperature measurement. As a result, it is possible to obtain a wafer type temperature sensor that does not deteriorate the measurement accuracy even at high temperatures. In addition, since a cable or the like for connecting the wafer type temperature sensor and an external device is not required, the temperature measurement process can be automated. In the present specification, the term “linearly expanded body” refers to a material that expands and contracts due to a change in temperature, and particularly refers to a metal or alloy such as lead, aluminum, brass, or copper having a high linear expansion coefficient.

  Preferably, the wafer type temperature sensor further includes temperature display means for displaying the temperature at the position indicated by the free end. This makes it possible to easily detect the temperature distribution on the wafer.

  Preferably, the wafer type temperature sensor further includes displacement amount amplifying means for amplifying the displacement amount of the free end. Since the amount of displacement at the free end is very small, the resolution of the temperature sensor is improved by using a displacement amount amplifying means such as a gear.

  Preferably, the wafer type temperature sensor further includes a restriction releasing unit that releases the restriction of the displacement restricting unit. By adopting the above configuration, this wafer type temperature sensor can be used repeatedly.

  As one embodiment, the linear expansion body includes a spiral portion having one end fixed to the wafer as a fixed end, and a linear portion extending from the other end of the spiral portion and having a free end at the tip. The displacement restricting means includes a claw and a rack that is provided on the linear portion of the linear expansion body and that restricts the displacement of the free end toward the fixed end by being locked by the claw.

  As another embodiment, the displacement restricting means includes a claw and a rack that restricts the displacement of the free end toward the fixed end by being locked by the claw. The restriction release means attracts the elastic member to the electrode by applying a voltage to the elastic member having a claw provided at its tip and extending linearly, an electrode extending in parallel to the elastic member, and the elastic member and the electrode. And a switch circuit for releasing the restriction on the displacement of the free end toward the fixed end by pulling the claw away from the rack.

  As another embodiment, the displacement amount amplifying means includes a rotational motion converting means for converting the linear motion of the free end into a rotational motion, a rotational amplifying means for amplifying the rotation of the rotational motion converted by the rotational motion converting means, Linear motion conversion means for converting the rotational motion amplified by the amplification means into linear motion.

As another embodiment, the displacement amount amplifying means includes a fulcrum provided on the wafer, a linear member rotatably held by the fulcrum, and a temperature indicating member indicating the temperature of the temperature display means. The free end is disposed on one side of the linear member, the temperature indicating member is disposed on the other side of the linear member, the distance d ₁ from the fulcrum to the free end, and the distance d ₂ from the fulcrum to the temperature indicating member. And d ₁ <d ₂ .

  A method for manufacturing a wafer-type temperature sensor according to the present invention includes a wafer and a plurality of temperature sensors that are divided into a plurality of regions on the upper surface of the wafer, and each of the plurality of temperature sensors includes: A wafer type sensor having a fixed end fixed to a wafer and a linear expansion body having a free end whose position on the wafer is displaced by a temperature change, and a displacement restricting means for restricting the displacement of the free end toward the fixed end. It is a manufacturing method. Specifically, as a first step, a sacrificial film and a linear expansion material are stacked on the wafer. As a second step, a linear expansion body including a fixed end and a free end is formed in the linear expansion material. As a third step, the sacrificial film is removed leaving a portion corresponding to the fixed end, and the free end is floated from the wafer.

  By adopting the above method, the temperature sensor can be formed directly on the wafer, so there is no need to use an adhesive or the like for mounting the temperature sensor. As a result, it becomes possible to measure the temperature in an ultrahigh temperature of 1100 degrees or more.

  The temperature measurement method according to the present invention is a method for measuring the temperature on a wafer placed in a heat treatment apparatus. Specifically, as a first step, the wafer includes a wafer and a plurality of temperature sensors which are divided into a plurality of regions and are arranged in each of the divided regions. A heat treatment apparatus for treating a wafer type sensor having a linear expansion body having a fixed end fixed to the substrate and a free end whose position on the wafer is displaced by a temperature change, and a displacement regulating means for regulating displacement of the free end in the direction of the fixed end Carry in. As a second step, a plurality of temperature sensors measure the maximum temperature of each divided area on the wafer. As a third step, the wafer type temperature sensor is unloaded from the heat treatment apparatus. As a fourth step, the measurement results of the temperature sensors arranged in each region of the wafer type temperature sensor are determined.

  The above temperature measurement method does not require manual work by an operator, and can automatically perform all the steps. As a result, since it is not necessary to stop the heat treatment apparatus every time the temperature is measured, the work efficiency of the heat treatment apparatus is improved.

  According to the present invention, a temperature measurement process can be automated, and a wafer type temperature sensor, a method for manufacturing a wafer type temperature sensor, and a temperature measurement method can be obtained in which measurement accuracy does not deteriorate even at high temperatures.

  With reference to FIGS. 1-3, the wafer type temperature sensor which concerns on one Embodiment of this invention, and the temperature measurement method by this wafer type temperature sensor are demonstrated.

  First, FIG. 2 is a view showing a wafer type temperature sensor 11 according to an embodiment of the present invention. This wafer-type temperature sensor 11 divides the wafer 12 and the wafer 12 into a plurality of regions, and is arranged in each of the divided regions X, Y... To detect the temperature on the wafer 12. 13a, 13b (hereinafter collectively referred to as “temperature sensor 13”).

  FIG. 1 is an enlarged view of the temperature sensor 13 when the wafer 12 is viewed from above. The temperature sensor 13 includes a linear expansion body 14 as a component, a latch mechanism 15 as a displacement restricting means, a reset circuit 16 as a restriction releasing means, and a scale 17 as a temperature display means.

  The linear expansion body 14 is formed in a spiral shape, and the central portion of one end of the spiral shape is a fixed end 14a fixed to the wafer 12, and the other end of the spiral shape extends linearly. It is formed in a cantilever shape that is a free end 14b whose position is displaced. A probe 14c that indicates the temperature on the scale 17 is provided at the free end 14b.

  The reset circuit 16 includes a power supply 16a and a switch 16b. A positive electrode 16c is connected to the positive electrode side of the power supply 16a via the switch 16, and a negative electrode 16d is connected to the negative electrode side. The positive electrode 16c is not fixed to the wafer 12, and is formed of an elastic member that can be elastically deformed. On the other hand, the negative electrode 16d is fixed to the wafer 12 in parallel with the positive electrode 16c.

  The latch mechanism 15 includes a claw 15a attached to the tip of the positive electrode 16c, and a saw-toothed rack 15b provided on a linear portion of the linear expansion body 14. The saw tooth of the rack 15b is formed such that the left tooth surface in the drawing is perpendicular to the linear portion of the linear expansion body 14, and the right tooth surface is inclined at a predetermined angle with respect to the linear portion. Yes. On the other hand, the claw 15a is formed such that the right surface in the drawing is perpendicular to the positive electrode 16c and the left surface is inclined at a predetermined angle with respect to the positive electrode 16c. Thereby, although the free end 14c can move to the right side in the figure, the movement to the fixed end side on the left side in the figure is restricted.

The scale 17 is formed in parallel to the linear portion of the linear expansion body 14, and displays the temperature at the position indicated by the probe 14c provided at the free end 14c. The scale interval is determined by measuring in advance the amount of expansion / contraction of the linear expansion body 14 due to temperature change. For example, if the linear expansion coefficient of linear expansion body 14 using aluminum ^{23 × 10 -6 (/ ℃)} , elongation amount when the temperature changes up to 25 ° C. to 125 ° C. is about 100 [mu] m. Therefore, when the scale unit is 1 ° C., the scale interval is 1 μm.

  In the temperature sensor 13 shown in FIG. 1, the linear expansion body 14 expands as the temperature rises, and the free end 14b moves to the right side in the drawing on the extended line of the straight line portion. At this time, since the positive electrode 16c has elasticity, the inclined portion of the sawtooth of the rack 15b moves to the right while jumping up the inclined portion of the claw 15a. On the other hand, when the free end 14b is about to move to the left in the figure, the vertical portion of the sawtooth of the rack 15b engages with the vertical portion of the claw 15a to restrict the movement of the free end 14b. As a result, the probe 14c always indicates the maximum temperature even when the ambient temperature decreases.

  Further, the temperature sensor 13 can release the latch mechanism 15 after the temperature measurement is completed, and return the free end 14b to the original position. Specifically, when the switch 16b of the reset circuit 16 is turned on and a voltage is applied to the positive electrode 16c and the negative electrode 16d, the positive electrode 16c is charged with positive electricity and the negative electrode 16d is charged with negative electricity. The positive electrode 16c is attracted to the negative electrode 16d. As a result, the engagement between the claw 15a and the rack 15b is released, and the free end 14b can return to a predetermined position on the left fixed end 14a side in the drawing.

  3 measures the temperature distribution of the wafer placed on the heating plate 104 of the heating / cooling apparatus 101 as shown in FIGS. 9 and 10 by using the wafer type temperature sensor 11 shown in FIG. It is a figure explaining a method. Since the heating / cooling device 101 is the same as the conventional one, illustration and description thereof are omitted.

  First, as a first step, the wafer type temperature sensor 11 is carried into the heating / cooling device 101. Specifically, the wafer type temperature sensor 11 is placed on the heating plate 104 by the transfer device 112. Since the wafer type temperature sensor 11 has the same shape as the processing wafer, the wafer type temperature sensor 11 can be loaded in a normal loading procedure without any special preparation at the time of temperature measurement. At this time, as shown in FIG. 3A, each temperature sensor 13 on the wafer 12 is in a state where the switch 16b is OFF, and the probe 14c indicates normal temperature.

  Next, as a second step, each temperature sensor 13 on the wafer 12 measures the temperature of each region on the wafer 12. Specifically, when the heating plate 104 is heated by the heater 107, as shown in FIG. 3B, the free end 14b moves to the right side in the drawing as the temperature rises, and the probe 14c adjusts the temperature on the scale 17. Point to.

  Next, as a third step, the wafer temperature sensor 11 is unloaded from the heating / cooling device 101. Specifically, it is unloaded by the transfer device 112 in the same procedure as the processing wafer. At this time, since the movement of the free end 14b to the left side in the figure is restricted by the latch mechanism 15, even if the temperature of the wafer type temperature sensor 11 decreases due to contact with the outside air, the probe 14c remains on the heating plate 104. Always refers to temperature.

  Next, as a fourth step, the measurement result of the temperature sensor 13 arranged in each region of the wafer type temperature sensor 11 is determined. Specifically, the operator reads the value of the scale 17 indicated by the probe 14 c of each temperature sensor 13. Here, since the temperature sensor 13 is as small as about 1 mm, it is preferable to read the scale 17 using a microscope or the like.

  Finally, as a fifth step, the latch mechanism 15 is released and the free end 14b is returned to the original position. Specifically, when the switch 16b is turned on, the positive electrode 16c is charged with positive electricity and the negative electrode 16d is charged with negative electricity. Therefore, as shown in FIG. The tip is attracted to the negative electrode 16d, and the latch mechanism 15 is released. As a result, as the temperature decreases, the free end 14b moves to the left in the figure and returns to its original position.

  FIG. 4 is a view showing a wafer type temperature sensor according to another embodiment of the present invention. This wafer type temperature sensor is provided with a gear mechanism as a displacement amount amplifying means for amplifying the displacement amount of the free end 14b in the wafer type temperature sensor 11 shown in FIG.

  This gear mechanism includes a first rack gear 18 disposed in a linear portion of the linear expansion body 14, a second rack gear 22 disposed opposite to the first rack gear 14 and having a probe 14c attached to the tip, and a first rack gear 18 A first gear 19 that meshes with the second gear, a third gear that meshes with the second rack gear 22, and a second gear 20 that integrally forms a small-diameter gear 20a that meshes with the first gear 19 and a large-diameter gear 20b that meshes with the third gear. .

  The first rack gear 18 and the first gear 19 function as rotational motion conversion means for converting the linear motion of the free end 14 b into the rotational motion of the first gear 19. The first gear 19 and the small-diameter gear 20a having a smaller number of teeth than the first gear 19 function as rotation amplification means that amplifies the rotation of the first gear 19 and transmits it to the large-diameter gear 20b. The third gear 21 and the second rack gear 22 function as linear motion conversion means that converts the rotational motion of the large-diameter gear 20b into linear motion. As a result, the amount of displacement of the free end 14b is amplified by the gear ratio between the first gear 19 and the small diameter gear 20a and becomes the amount of displacement of the probe 14c.

  The gear mechanism is not limited to the configuration shown in FIG. 4, and any configuration that amplifies the amount of displacement of the free end 14b can be employed. For example, the third gear 21 may be removed and the large-diameter gear 20b and the second rack gear 22 may be directly meshed with each other.

  FIG. 5 is a view showing a wafer type temperature sensor according to still another embodiment of the present invention. This wafer type temperature sensor is provided with a lever mechanism as a displacement amount amplifying means for amplifying the displacement amount of the free end 14b in the wafer type temperature sensor 11 shown in FIG.

This lever mechanism has a fulcrum 23 provided on the wafer 12 shown in FIG. 2, a linear member 24 rotatably held at the fulcrum 23, and a probe 14c at the tip, and moves in parallel with the scale 17. And a temperature indicating member 25. The free end 14b abuts on one side of the linear member 24, and the temperature indicating member 25 abuts on the other side. In this case, _{d 1} the distance from the fulcrum 23 to the free end 14b, and the distance from the fulcrum 23 to a temperature indicating member 25 and _{d 2,} always relationship _d 1 _{<d 2} is satisfied.

When the free end 14c is displaced in the temperature sensor 13, the linear member 24 rotates with the contact portion between the linear member 24 and the free end 14c as a power point. Then, the probe 14c is displaced in the direction opposite to the moving direction of the free end 14b with the contact portion between the linear member 24 and the temperature indicating member 25 as an action point. At this time, the displacement amount of the probe 14c is amplified by d ₂ / d ₁ from the displacement amount of the free end 14b.

  The lever mechanism is not limited to the configuration shown in FIG. 5, and any configuration that amplifies the amount of displacement of the free end 14b can be adopted. For example, the probe 14c can be displaced in the same direction as the free end 14b by arranging the fulcrum, the force point, and the action point in this order from one end of the linear member 24.

  The temperature sensor 13 having the above-described configuration may be manufactured by an independent process and fixed on the wafer 12 with an adhesive or the like. However, the temperature sensor 13 may be directly formed on the wafer 12 by a method as shown in FIGS. Also good. 6 to 8 are diagrams for explaining a method of forming the linear expansion body 14 of the temperature sensor 13 as shown in FIG. 1 by using a MEMS (Micro Electro Mechanical System) technique. Each drawing (A) is a plan view, and each drawing (B) is a cross-sectional view taken along line XX in FIG.

First, as a first step, as shown in FIG. 6, a sacrificial film 12b and a linear expansion material 12c are laminated on a substrate 12a. Here, in order to form the linear expansion body 14, the linear expansion material 12c uses metals and alloys, such as aluminum, lead, brass, copper, etc. with a high linear expansion coefficient. Further, since the sacrificial film 12b is formed with the free end 14b floating from the substrate 12a, a silicon oxide film (SiO ₂ ) that can be removed in a later step is used.

  Next, as a second step, as shown in FIG. 7, a fixed end 14a, a free end 14b, a rack 15b, a spiral portion, and a straight portion are formed on the linear expansion material 12c. Specifically, a photoresist is applied to the linear expansion material 12c, and unnecessary portions other than the linear expansion body 14 are removed by photolithography to form a resist pattern. The linear expansion material 14 is formed by etching the linear expansion material 12c using the resist pattern as a mask. In this step, since only the layer of the linear expansion material 12c is processed, the free end 14b and the rack 15b are also fixed on the wafer 12.

  Next, as a third step, the sacrificial film 12b is removed with an etchant such as hydrofluoric acid. At this time, the fixed end 14a is formed thicker than the other part of the linear expansion body 14, so that a part of the sacrificial film 12b located below the fixed end 14a remains as shown in FIG. Become. Thereby, parts other than the fixed end 14a of the linear expansion body 14 will be in the state which floated from the board | substrate 12a, and the free end 14b will be displaceable.

  6 to 8, only the method for forming the linear expansion body 14 of the temperature sensor 13 has been described. However, the latch mechanism 15, the reset circuit 16, the scale 17, and the gear mechanism are also formed by the same method. It is possible.

  As mentioned above, although embodiment of this invention was described with reference to drawings, this invention is not limited to the thing of embodiment shown in figure. Various modifications and variations can be made to the illustrated embodiment within the same range or equivalent range as the present invention.

  The present invention is advantageously used for measuring the temperature distribution of a wafer in a semiconductor manufacturing apparatus or the like.

It is an enlarged view of the temperature sensor arrange | positioned at the wafer type temperature sensor shown in FIG. It is a figure which shows the wafer type temperature sensor which concerns on one Embodiment of this invention. It is a figure explaining the temperature measurement method of the temperature sensor shown in FIG. 1, (A) is the state before temperature measurement, (B) is the state at the time of temperature measurement, (C) is the state which has released the latch mechanism FIG. It is a figure which shows the example which provided the gear mechanism as a displacement amount amplification means in the temperature sensor shown in FIG. It is a figure which shows the example which provided the lever mechanism as a displacement amount amplification means in the temperature sensor shown in FIG. FIG. 2 is a diagram illustrating a method of manufacturing the temperature sensor illustrated in FIG. 1 and showing a state in which a sacrificial film and a linear expansion material are stacked on a substrate. It is a method of manufacturing the temperature sensor shown in FIG. 1, and is a diagram showing a state in which a linear expansion material is processed into the shape of the temperature sensor. FIG. 2 is a diagram showing a method for manufacturing the temperature sensor shown in FIG. 1 and showing a state in which a sacrificial film is removed by etching. It is a longitudinal cross-sectional view of the conventional heating / cooling device. FIG. 10 is a cross-sectional view taken along line AA in FIG. 9. It is the longitudinal cross-sectional view which looked at FIG. 9 from the right side surface. It is a figure which shows an example of the conventional wafer type wired type temperature sensor. It is a figure which shows an example of the conventional wafer type | mold radio | wireless type temperature sensor. It is a figure which shows the other example of the conventional wafer type | mold radio | wireless temperature sensor.

Explanation of symbols

11, 120, 130, 140 Wafer type temperature sensor, 12, 121, 131, 141, 143 wafer, 12a substrate, 12b sacrificial film, 12c linear expansion material, 13, 13a, 13b, 122, 132, 142 Temperature sensor, 14 Linear expansion body, 14a fixed end, 14b free end, 14c probe, 15 latch mechanism, 15a claw, 15b rack, 16 reset circuit 16a power supply, 16b switch, 16c positive electrode, 16d negative electrode, 17 scale, 18 first rack gear, 19 1st gear, 20 2nd gear, 20a small diameter gear, 20b large diameter gear, 21 3rd gear, 22 2nd rack gear, 23 fulcrum, 24 linear member, 25 temperature indicating member, 101 heating / cooling device, 102 housing Body, 103 Cooling plate, 104 Heating plate, 105, 110 Lifting pins, 106, 111 Lifting drive device 107 heater, 108 heating plate temperature sensor, 109 controller, 36, 56 information processing device, 37 processing wafer, 112 transport device, 113 transport port, 114 shutter, 115 transport arm, 116, 134, 144 transmission device, 123, 145 cable.

Claims (10)

A wafer,
Dividing the upper surface of the wafer into a plurality of regions, and a plurality of temperature sensors arranged in each of the divided regions,
The plurality of temperature sensors are:
A linear expansion body having a fixed end fixed to the wafer and a free end whose position on the wafer is displaced by a temperature change;
A wafer type sensor comprising: a displacement regulating means for regulating displacement of the free end toward the fixed end.   The wafer type temperature sensor according to claim 1, further comprising temperature display means for displaying a temperature at a position indicated by the free end.   The wafer type temperature sensor according to claim 1 or 2, further comprising a displacement amount amplifying means for amplifying the displacement amount of the free end.   The wafer type temperature sensor according to claim 1, further comprising a restriction release unit that releases the restriction of the displacement restriction unit. The linear expansion body includes a spiral portion having one end fixed to the wafer as the fixed end, and a linear portion extending from the other end of the spiral portion and having the free end at the tip.
The displacement restricting means includes a claw and a rack that is provided in a linear portion of the linear expansion body and that restricts the displacement of the free end toward the fixed end by being locked by the claw. The wafer type temperature sensor according to any one of 1 to 4. The displacement restricting means includes a claw and a rack that restricts the displacement of the free end toward the fixed end by being locked by the claw,
The restriction release means includes an elastic member that is provided with the claw at its tip and extends linearly;
An electrode extending parallel to the elastic member;
A switch circuit that pulls the elastic member to the electrode by applying a voltage to the elastic member and the electrode, and pulls the claw away from the rack to release the displacement restriction of the free end toward the fixed end; The wafer type sensor according to claim 4, comprising: The displacement amount amplifying means is a rotational motion converting means for converting the linear motion of the free end into a rotational motion;
Rotation amplification means for amplifying the rotation of the rotational motion converted by the rotational motion conversion means;
The wafer type temperature sensor according to claim 3, further comprising linear motion conversion means for converting the rotational motion amplified by the rotational amplification means into linear motion. The displacement amount amplifying means includes a fulcrum provided on the wafer, a linear member rotatably held on the fulcrum, and a temperature indicating member indicating the temperature of the temperature display means,
The free end is disposed on one side of the linear member;
The temperature indicating member is disposed on the other side of the linear member;
The distance d ₁ from the fulcrum to the free end and the distance d ₂ from the fulcrum to the temperature indicating member are:
The wafer type temperature sensor according to claim 3, wherein d ₁ <d ₂ is satisfied. A wafer, and a plurality of temperature sensors arranged in each of the divided areas, the plurality of temperature sensors including a fixed end and a temperature fixed to the wafer. A wafer type sensor manufacturing method comprising: a linear expansion body having a free end whose position on the wafer is displaced by a change; and a displacement restricting means for restricting displacement of the free end toward the fixed end.
Laminating a sacrificial film and a linear expansion material on the wafer;
Forming the linear expansion body including the fixed end and the free end in the linear expansion material;
And a step of removing the sacrificial film while leaving a portion corresponding to the fixed end to float the free end from the wafer. A method for measuring a temperature on a wafer placed in a heat treatment apparatus,
A wafer, and a plurality of temperature sensors arranged in each of the divided areas, the plurality of temperature sensors including a fixed end and a temperature fixed to the wafer. A step of carrying in a wafer type sensor having a linear expansion body having a free end whose position on the wafer is displaced by a change and a displacement regulating means for regulating displacement of the free end in the fixed end direction into the heat treatment apparatus; When,
The plurality of temperature sensors measuring the maximum temperature of each segmented area on the wafer;
Unloading the wafer temperature sensor from the heat treatment apparatus;
And a step of discriminating a measurement result of the temperature sensor arranged in each region of the wafer type temperature sensor.

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