JP2007180120A - Two-dimensional photonic crystal surface light emitting laser light source - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a two-dimensional photonic crystal surface light emitting laser light source with easy fabrication wherein the extraction efficiency of light is high in plane perpendicular direction. <P>SOLUTION: In the laser light source having an active layer and a two-dimensional photonic crystal layer, a different refractive index region assembly 25 comprised of a first hole 251 and a second hole 252 smaller in area and thickness than the first hole 251 is arranged in a tetragonal lattice to form the two-dimensional photonic crystal layer 24. The laser light source has the different refractive index region assembly 25 that is lower in symmetry than a columnar hole used in the conventional two-dimensional photonic crystal surface light emitting laser light source, so that the extraction efficiency of light is high in plane perpendicular direction vertical to the surface. In addition, the different refractive index region assembly 25 can be easily fabricated by ordinary dry etching. Furthermore, even if the first and second holes 251 and 252 are slightly deformed due to heat given during manufacture, low symmetry can be kept and the reduction of the extraction efficiency of light can be prevented. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a surface emitting laser light source that emits laser light in a direction perpendicular to a surface from a planar light source.

  Conventionally, a Fabry-Perot type laser light source using a Fabry-Perot resonator and a distributed feedback (DFB) type laser light source using a diffraction grating have been used. Each of these laser light sources oscillates laser light by amplifying light of a predetermined wavelength by resonance or diffraction.

  On the other hand, in recent years, a new type of laser light source using a photonic crystal has been developed. A photonic crystal is a material in which a periodic structure is artificially formed on a base material made of a dielectric. In general, the periodic structure is formed by periodically providing a region having a refractive index different from that of the base material (different refractive index region) in the base material. Due to this periodic structure, Bragg diffraction occurs in the crystal, and an energy band gap appears in the energy of light. Some photonic crystal laser light sources use a point defect as a resonator using the band gap effect, and others use a standing wave at the band edge where the group velocity of light is zero. In either case, light of a predetermined wavelength is amplified to obtain laser oscillation.

  Patent Document 1 describes a laser light source in which a two-dimensional photonic crystal is formed in the vicinity of an active layer containing a light emitting material. In this two-dimensional photonic crystal, cylindrical holes are periodically provided in a plate-shaped base material made of a semiconductor (triangular lattice, square lattice, hexagonal lattice, etc.), and the refractive index distribution is 2 Has a dimensional periodicity. By making this period coincide with the wavelength in the medium of the light generated in the active layer by the injection of carriers from the electrodes, a two-dimensional standing wave is formed inside the two-dimensional photonic crystal, and thus light Is strengthened and laser oscillation occurs.

FIG. 1 schematically shows a standing wave formed inside the two-dimensional photonic crystal described in Patent Document 1. In this figure, only a standing wave in one direction (referred to as the x direction) in the crystal plane is shown one-dimensionally. However, in the case of a square lattice, for example, a standing wave is also formed in a direction perpendicular thereto. . Focusing on the electric field, this standing wave forms two modes, one having a node at the hole 12 in the two-dimensional photonic crystal 11 and the other having a belly. When an axis (z axis) passing through the center of a hole 12 is defined as a symmetry axis, the former is antisymmetric with respect to the axis, and the latter is symmetrical. Here, considering the coupling with the external plane wave, the distribution function of the plane wave propagating in the z direction is uniform in the x direction, whereas the symmetric axis is an odd function in the antisymmetric mode and an even function in the symmetric mode. It becomes a function. Assuming that the size of the two-dimensional photonic crystal is infinite, since the overlap integral with the external plane wave is not zero in the symmetric mode, first-order diffracted light in the direction perpendicular to the plane is generated. On the other hand, in the antisymmetric mode, the overlap integral with the external plane wave becomes 0, so that the first-order diffracted light in the direction perpendicular to the plane does not occur due to interference. Therefore, this antisymmetric mode cannot extract light in the direction perpendicular to the plane.
Actually, since the size of the two-dimensional photonic crystal is finite, the light in the antisymmetric mode can be extracted in the direction perpendicular to the plane because the symmetry is lost. However, even in that case, the intensity of light extracted in the direction perpendicular to the plane is weakened due to the influence of interference.

  In order to suppress the influence of such interference and increase the light extraction efficiency in the direction perpendicular to the surface, it has been studied to break the symmetry of the refractive index distribution in the plane of the two-dimensional photonic crystal. . An example is described below.

  Patent Document 2 discloses a surface emitting laser light source having a two-dimensional photonic crystal in which symmetry in a plane parallel to a base material is broken by forming a lattice structure having translational symmetry but not rotational symmetry. Is described. Such symmetry is, for example, that holes that are different refractive index regions are arranged in a square lattice, and the planar shape of each hole (the shape of the cross section parallel to the two-dimensional photonic crystal) is an equilateral triangle. It is formed by. In this case, the lattice has a 4-fold rotational symmetry and the vacancies have a 3-fold rotational symmetry. However, since the rotational symmetries of the two do not match, the crystal as a whole has no rotational symmetry. In addition, two holes having a planar shape with a perfect circle and different diameters can be provided adjacent to one lattice point of a square lattice. In this case, the lattice points do not have rotational symmetry, and therefore the entire crystal has no rotational symmetry. In these laser light sources, since the symmetry of the lattice structure of the two-dimensional photonic crystal is lower than that of the lattice structure shown in FIG. 1, the influence of light interference in the antisymmetric mode is suppressed, and the light extracted in the direction perpendicular to the plane is reduced. The strength can be made stronger than before.

  In Patent Document 3, the planar shape differs between the surface on the active layer side and the surface on the opposite side (light emitting side), and the center of gravity of the planar shape on the active layer side and the center of gravity of the planar shape on the light emitting side are shifted in the in-plane direction. A two-dimensional photonic crystal surface emitting laser light source having a different refractive index region is described. According to this configuration, since the shape of the different refractive index region can be changed also in the direction perpendicular to the surface, the shape of the different refractive index region can be adjusted more freely than that of Patent Document 2. Thereby, the symmetry of the shape of the different refractive index region can be broken as compared with that of Patent Document 2, and the intensity of light extracted in the direction perpendicular to the plane can be further increased.

JP 2000-332351 A ([0037] to [0056], FIG. 1) JP 2004-296538 A ([0026] to [0037], [0046], FIGS. 1 to 5, FIG. 22) International Publication No. WO2005 / 086302 ([0014] to [0018], [0029], FIG. 3, FIG. 8)

  The two-dimensional photonic crystal surface emitting laser light source described in Patent Document 2 has the following problems during its manufacture. According to a normal manufacturing method, first, a base material of a two-dimensional photonic crystal (or a base material in which a part of a layer such as an active layer is laminated) is manufactured, and the base material is formed by a method such as dry etching. Regular triangular prism holes are formed periodically. And each layer (clad layer, electrode, etc.) containing a base material is piled up, and each layer is adhere | attached by heating. During this heat treatment, the corners of the regular triangular prisms of the holes may be deformed and rounded, resulting in a shape close to a cylinder. When this deformation occurs, the symmetry of the planar shape of the holes becomes higher than that of the regular triangular prism, and the light extraction efficiency decreases.

  Further, when manufacturing the two-dimensional photonic crystal surface emitting laser light source described in Patent Document 3, each hole has a shape that is not uniform in the direction perpendicular to the surface, such as a stepped structure. It becomes complicated.

  A problem to be solved by the present invention is a two-dimensional photonic crystal surface emitting laser light source that has high light extraction efficiency in the direction perpendicular to the surface, is easy to manufacture, and is not easily affected by deformation due to heat, and the like. It is to provide a method.

In order to solve the above problems, the present invention provides a two-dimensional photonic crystal light emitting laser light source having an active layer and a two-dimensional photonic crystal provided on one side thereof.
The two-dimensional photonic crystal is formed of a plurality of regions having different refractive indexes from the base material in a plate-shaped base material, and at least two of the regions have different refractive index region aggregates having different thicknesses. Many, arranged periodically,
It is characterized by that.

The planar shapes of the different refractive index regions in the different refractive index region assembly can be different from each other.
Each of the different refractive index regions in the different refractive index region aggregate is preferably thicker as the planar area is larger.

A method of manufacturing a two-dimensional photonic crystal surface emitting laser light source according to the present invention includes a method of manufacturing a laser light source having an active layer and a two-dimensional photonic crystal provided on one side of the active layer.
A mask is formed by periodically arranging a large number of hole assemblies composed of two or more holes having different areas on a plate-shaped base material,
The base material is dry-etched from above the mask, and the dry etching is finished before all the holes formed in the base material penetrate the base material.
Thus, the two-dimensional photonic crystal is formed.

Embodiments and effects of the invention

  The two-dimensional photonic crystal surface emitting laser light source according to the present invention has a two-dimensional photonic crystal on one side of the active layer. However, the active layer and the two-dimensional photonic crystal do not need to be in contact with each other, and a member such as a spacer may be inserted between them. The active layer can be the same as that conventionally used for a Fabry-Perot type laser light source.

  A different refractive index region assembly is provided in the base material of the two-dimensional photonic crystal. The different refractive index region aggregate is formed by forming a plurality of regions (different refractive index regions) having different refractive indexes from the base material. A periodic refractive index distribution is formed by periodically arranging a large number of different refractive index region aggregates. Examples of the periodic arrangement include a square lattice shape and a triangular lattice shape. A periodic refractive index distribution is formed by disposing different refractive index region aggregates on the lattice points of these lattices.

  At least two of the plurality of different refractive index regions included in each aggregate of different refractive index regions have different thicknesses. If this condition is satisfied, the thicknesses of all the different refractive index regions in the different refractive index region aggregate may be different, or some of the different refractive index regions may have the same thickness. By setting the thicknesses of the different refractive index regions in this way, the symmetry in the plane parallel to the base material is lower than that of the two-dimensional photonic crystal in which the cylindrical different refractive index regions are periodically arranged. To do. Thereby, it is possible to suppress a decrease in the extraction efficiency of the laser light due to cancellation of the antisymmetric mode due to interference.

  The method of using the two-dimensional photonic crystal surface emitting laser light source of the present invention is the same as the conventional one. Carriers are injected into the active layer by applying a voltage, whereby light generated in the active layer becomes a two-dimensional standing wave inside the two-dimensional photonic crystal, and laser oscillation occurs when the light is strengthened.

  The planar shapes of the different refractive index regions may be the same, but the planar shapes of the regions in the different refractive index region aggregate may be different from each other in order to lower the in-plane symmetry. desirable.

As for each different refractive index area | region in a different refractive index area | region assembly, it is desirable to enlarge the area of a planar shape, so that thickness is thick. The reason will be described below.
When manufacturing a two-dimensional photonic crystal, in many cases, holes are formed in a base material by using a dry etching method. When forming the holes, the smaller the area of the planar shape is, the more difficult it is for the etching gas to enter the holes, and the etching rate becomes slower. As a result, the thickness of each of the different refractive index regions in the different refractive index region aggregate increases as the area increases. That is, the different refractive index region aggregates according to the present invention can be easily produced by using a normal dry etching method only by making the areas of the different refractive index regions different from each other without using any special technique. be able to.
However, if all the holes penetrate the base material, the thicknesses of all the different refractive index regions become the same. Therefore, in dry etching, all the holes formed in the base material penetrate the base material. You must exit before you can.

  One of the different refractive index region aggregates in the present invention has a first rectangular portion having a substantially rectangular plane shape and an area that is substantially circular and has a diameter shorter than the long side of the first different refractive index region. And the second different refractive index region is small and has a small thickness. It is symmetric that the planar shape of the first and second refractive index regions is slightly distorted or the rectangular corner of the first different refractive index region is deformed and rounded due to manufacturing reasons or the like. There is no problem as long as the characteristic of breaking the nature is not impaired. In addition, since the second different refractive index region has a smaller area than the first different refractive index region, the second dimensional photonic crystal is naturally formed by using the dry etching method as described above. The thickness of the different refractive index region is smaller than the thickness of the first different refractive index region.

  This aggregate of different refractive index regions has a planar shape close to a triangle as a whole. That is, the first different refractive index region constitutes one side of the triangle, and the second different refractive index region constitutes one vertex facing the side. Also, making the first and second different refractive index regions different in thickness corresponds to providing a step inside one different refractive index region. From these facts, it can be said that this different refractive index region aggregate has the same asymmetry as one different refractive index region having a step in the triangular prism. Due to such asymmetry, it is possible to suppress a decrease in laser light extraction efficiency due to cancellation of the antisymmetric mode caused by interference.

  Further, the different refractive index region assembly composed of the first different refractive index region and the second different refractive index region has the first different refractive index region even if each of the different refractive index regions is slightly deformed due to the influence of heat applied at the time of manufacture. It is possible to maintain the planar feature that the long side of the refractive index region is one side of a triangle and the second different refractive index region is one vertex facing the side. Therefore, even if such deformation occurs, it is possible to suppress a decrease in light extraction efficiency.

An embodiment of a two-dimensional photonic crystal surface emitting laser light source (hereinafter referred to as “laser light source”) according to the present invention will be described with reference to FIGS.
In the laser light source of this embodiment, as shown in FIG. 2, a multiple quantum well (Multiple-Quantum) formed of indium gallium arsenide (InGaAs) and gallium arsenide (GaAs) between the positive electrode 21 and the negative electrode 22. An active layer 23 made of Well; MQW) is provided. Then, a two-dimensional photonic crystal layer 24 made of p-type GaAs is provided on the active layer 23. The configuration of the two-dimensional photonic crystal layer 24 will be described later. A spacer layer 261 made of p-type GaAs, a cladding layer 271 made of p-type AlGaAs, and a contact layer 28 made of p-type GaAs are provided between the active layer 23 and the positive electrode 21. A spacer layer 262 made of n-type GaAs and a clad layer 272 made of n-type AlGaAs are provided between the active layer 23 and the negative electrode 22. In FIG. 2, in order to show the structure of the two-dimensional photonic crystal layer 24, the space between the spacer layer 261 and the two-dimensional photonic crystal layer 24 is drawn.

The configuration of the two-dimensional photonic crystal layer 24 will be described.
FIG. 3A shows a top view of the two-dimensional photonic crystal layer 24. The two-dimensional photonic crystal layer 24 is made of p-type GaAs and has a slab-like base material having a thickness of 130 nm and different refractive index region aggregates 25 arranged in a square lattice with a period of 285 nm. FIG. 3 (b) shows a top view of one different refractive index region assembly 25, and FIG. 3 (c) shows a longitudinal sectional view. The different refractive index region assembly 25 includes a first hole 251 and a second hole 252 formed by punching a base material. The shape of the first hole 251 is a rectangular parallelepiped having a long side of 167 nm, a short side of 87 nm, and a thickness of 120 nm, and the second hole 252 is a cylinder having a diameter of 56 nm and a thickness of 60 nm. The second hole 252 is disposed adjacent to the long side of the first hole. The distance between the centers is 90 nm. The ratio (filling factor) occupied by the first holes 251 and the second holes 252 in the two-dimensional photonic crystal layer 24 is 0.18.

A method for manufacturing the laser light source of this embodiment will be described with reference to FIG.
First, the first laminated body 32 is formed by laminating the cladding layer 272, the spacer layer 262, the active layer 23, and the base material 31 made of p-type GaAs in this order by using a normal MOCVD method or the like (a). Next, a resist 33 is formed on the base material 31, and a planar shape is formed on the resist 33 corresponding to the position where the first holes 251 and the second holes 252 are provided by an electron beam exposure method, a nanoimprint method, or the like. Form a hole 341 having a long side of 167 nm × short side of 87 nm and a circular hole 342 having a diameter of 56 nm (b). Thereafter, an etching gas containing chlorine is introduced onto the resist 33 (c). The etching gas dry-etches the base material 31 from the rectangular hole 341 and the circular hole 342, respectively. By performing this dry etching for a predetermined time, the base material 31 has a first hole 251 formed in a predetermined thickness below the rectangular hole 341 and a lower hole than the first hole 251 below the circular hole 342. A second hole 252 having a small thickness is drilled to form a two-dimensional photonic crystal layer 24 (d). The reason why the first holes 251 and the second holes 252 are formed with different thicknesses will be described later. The predetermined time is obtained by a preliminary experiment. After the dry etching is completed, the resist 33 is removed.

  Separately from the first stacked body 32, a second stacked body 35 in which the spacer layer 261, the clad layer 271 and the contact layer 28 are stacked in this order is manufactured using normal MOCVD or the like. The two-dimensional photonic crystal layer 24 and the spacer layer 261 are overlapped and heated to 200 to 700 ° C. to fuse them together (e). Finally, the positive electrode 21 is vapor-deposited on the surface of the contact layer 28 and the negative electrode 22 is vapor-deposited on the surface of the cladding layer 272, thereby completing the laser light source of this embodiment (f).

  The reason why the first hole 251 and the second hole 252 having different thicknesses are formed by the process of FIG. Since the area of the circular hole 342 is sufficiently smaller than the area of the rectangular hole 341 (about 1/5), the etching gas is less likely to enter the circular hole 342 than the rectangular hole 341. As a result, the etching speed that proceeds from the circular hole 342 is slower than the etching speed that proceeds from the rectangular hole 341. Therefore, the etching depth at the end of the dry etching is deeper in the first hole 251 than in the second hole 252, and thus the thickness of the first hole 251 and the second hole 252 described above. Differences occur.

  FIG. 5 shows a micrograph of the two-dimensional photonic crystal layer 24 after the completion of the step (d) of the manufacturing method of the present embodiment in a top view (a) and a longitudinal sectional view (b). From FIG. 5A, it can be seen that the first hole 251 and the second hole 252 having a rectangular planar shape are formed. 5B that the first hole 251 is thicker than the second hole 252. FIG.

  For the laser light source of this example, the relationship between the current injected from the electrode and the emission intensity was measured. In addition, the base material has a two-dimensional photonic crystal layer in which cylindrical holes having a diameter of 110 nm and a height of 100 nm are arranged in a square lattice pattern with a period of 285 nm. The same measurement was performed for the laser light source (comparative example). The measurement results of this example are shown in FIG. 6 (a), and the measurement results of the comparative example are shown in FIG. 6 (b). This example has higher slope efficiency and stronger emission intensity than the comparative example.

  For the laser light source of this example, the electromagnetic field distribution in the two-dimensional photonic crystal layer 24 was calculated. In this calculation, in the two-dimensional photonic crystal having a square lattice-like refractive index profile, the calculation was performed for the band edge A having the lowest energy in the vicinity of the Γ point (k = 0) among the four bands. The calculation results are shown in FIG. The direction of the arrow in the figure indicates the direction of the electric field, the length of the arrow indicates the strength of the electric field, and the shading indicates the strength of the magnetic field. Here, the calculation results are shown for the case where the distance between the first hole 251 and the second hole 252 is 114 nm (a) and the case where the distance is 85.5 nm (b). The Q value obtained from this electromagnetic field distribution was 3396 in (a) and 2378 in (b). In all cases, the value was about several thousand, which is considered suitable for extracting laser light in the direction perpendicular to the plane (see, for example, Patent Document 1).

  The planar shapes of the first hole 251 and the second hole 252 are not limited to those described above. For example, as shown in FIG. 8, both the first hole 251 and the second hole 252 are thicker in the first hole 251 than in the second hole 252 (when the manufacturing method shown in FIG. 4 is used). As long as the condition that the first hole 251 has a larger planar shape than the second hole 252 is satisfied, various shapes can be taken.

The graph which shows the antisymmetric mode and symmetric mode of the standing wave in a two-dimensional photonic crystal. The perspective view of one Example of the laser light source which concerns on this invention. The top view (a) of the two-dimensional photonic crystal layer 24 in the laser light source of a present Example, and the enlarged view (top view (b) and longitudinal cross-sectional view (c)) of the different refractive index area | region aggregate 25. The longitudinal cross-sectional view which shows the manufacturing method of the laser light source of a present Example. The microscope picture (top view (a) and longitudinal cross-sectional view (b)) of the two-dimensional photonic crystal layer 24 of the laser light source produced in the present Example. The graph which shows the result of having measured the relationship between the electric current inject | poured from the electrode of the laser light source of a present Example (a) and the comparative example (b), and emitted light intensity. The figure which shows the calculation result of the electromagnetic field distribution regarding the band edge A in the two-dimensional photonic crystal layer 24 in the laser light source of a present Example. The top view which shows the example of the shape of a 1st hole and a 2nd hole.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... Two-dimensional photonic crystal 12 ... Hole 21 ... Positive electrode 22 ... Negative electrode 23 ... Active layer 24 ... Two-dimensional photonic crystal layer 25 ... Different refractive index area | region aggregate 251 ... 1st hole 252 ... 2nd sky Holes 261, 262 ... Spacer layers 271, 272 ... Cladding layer 28 ... Contact layer 31 ... Base material 32 ... First laminated body 33 ... Resist 341 ... Rectangular hole 342 ... Circular hole 35 ... Second laminated body

Claims (6)

In a two-dimensional photonic crystal surface emitting laser light source having an active layer and a two-dimensional photonic crystal provided on one side thereof,
The two-dimensional photonic crystal is formed of a plurality of regions having different refractive indexes from the base material in a plate-shaped base material, and at least two of the regions have different refractive index region aggregates having different thicknesses. Many, arranged periodically,
A two-dimensional photonic crystal surface emitting laser light source.   2. The two-dimensional photonic crystal surface emitting laser light source according to claim 1, wherein the planar shapes of the different refractive index regions in the different refractive index region aggregate are different from each other.   3. The two-dimensional photonic crystal surface emitting laser light source according to claim 2, wherein each of the different refractive index regions in the different refractive index region aggregate is thicker as a planar area is larger.   The aggregate of the different refractive index regions is provided with a first different refractive index region having a substantially rectangular planar shape and a diameter shorter than the length of the long side provided adjacent to the long side of the first different refractive index region. 4. The two-dimensional photonic according to claim 3, further comprising: a second different refractive index region having a substantially circular plane shape having a smaller area and a smaller thickness than the first different refractive index region. Crystal surface emitting laser light source.   The two-dimensional photonic crystal surface emitting laser light source according to any one of claims 1 to 4, wherein each region in the different refractive index region aggregate is composed of holes. In a method of manufacturing a two-dimensional photonic crystal surface emitting laser light source having an active layer and a two-dimensional photonic crystal provided on one side thereof,
A mask is formed by periodically arranging a large number of hole assemblies composed of two or more holes having different areas on a plate-shaped base material,
The base material is dry-etched from above the mask, and the dry etching is finished before all the holes formed in the base material penetrate the base material.
A method of manufacturing a two-dimensional photonic crystal surface-emitting laser light source, characterized in that the two-dimensional photonic crystal is formed by the method.