JP2007173851A - Semiconductor light-emitting device of surface-emitting type, and method of manufacturing same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-emitting device, using a resin-based material as the material of an embedded insulating layer and the semiconductor light-emitting device, which can reliably and easily isolate a wafer. <P>SOLUTION: The method includes the steps of forming a semiconductor deposition layer 150 having a plurality of columnar parts 110 on a semiconductor substrate 101, forming a buried insulating layer 120, made of the resin-based material around the columnar parts, and forming a chip separated from the wafer. In a step of forming the semiconductor deposition layer 150 having the columnar parts, a predetermined pattern of an isolating semiconductor layer 130 is formed in a boundary region of the chip; in a step of forming the embedded insulating layer 120, at least the upper surface of the isolating semiconductor layer 130 is exposed; and in a step of forming the chip, the isolation semiconductor layer 130 is used to achieve this isolation. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a surface emitting semiconductor light emitting device such as a surface emitting semiconductor laser or a light emitting diode, and a method for manufacturing the same.

For example, a surface emitting semiconductor laser having a configuration in which a periphery of a columnar portion constituting a resonator is embedded with a resin material such as polyimide is known. By the way, when such a buried insulating layer made of a resin material is used, the following problems may occur when the wafer on which the light emitting element is formed is separated. That is, since the embedded insulating layer made of a resin-based material has a larger viscosity than the semiconductor layer and is difficult to cut, the cleavage of the semiconductor layer is hindered and it is difficult to perform wafer separation by scribing with high accuracy. Alternatively, for the same reason, when the wafer is separated by dicing, an external force applied to the buried insulating layer may adversely affect the light emitting element. If the wafers are not separated well in this way, problems such as generation of particles, defective die attach and die bonding, and chip breakage may occur.
Japanese Patent Laid-Open No. 08-070154 Japanese Patent Laid-Open No. 10-261839 Japanese Unexamined Patent Publication No. 07-094825

  An object of the present invention is to provide a manufacturing method and a semiconductor light emitting device capable of reliably and easily separating a wafer in manufacturing a semiconductor light emitting device using a resin-based material as a buried insulating layer.

A method for manufacturing a semiconductor light emitting device according to the present invention includes:
Forming a semiconductor deposition layer having a plurality of columnar portions on a semiconductor substrate;
Forming a buried insulating layer made of a resin-based material around the columnar part; and
Separating the semiconductor substrate and the layers on the semiconductor substrate to form a chip,
In the step of forming the semiconductor deposition layer having the columnar part, a separation semiconductor layer having a predetermined pattern is formed in a boundary region of the chip,
In the step of forming the buried insulating layer, exposing at least the upper surface of the isolation semiconductor layer; and
In the step of forming the chip, the separation is performed using the separation semiconductor layer.

  According to the manufacturing method of the present invention, the separation of the wafer (the semiconductor substrate and the layer formed thereon) can be reliably and easily performed by using the separation semiconductor layer.

  The production method of the present invention can further take the following aspects.

  (A) The columnar portion and the semiconductor layer for separation can be patterned by lithography and etching after forming a semiconductor layer on the semiconductor substrate.

  (B) A step of forming an electrode layer having a predetermined pattern may be included after the step of forming the buried insulating layer. The electrode layer can be formed such that an end portion thereof is separated from the separation semiconductor layer.

  (C) The separating semiconductor layer can take several forms.

  That is, the separation semiconductor layer is formed continuously in the boundary region of the chip, and the wafer can be separated along the separation semiconductor layer.

  Further, the separation semiconductor layer is formed discontinuously in the boundary region of the chip, and the wafer can be separated along the separation semiconductor layer.

  Furthermore, two separation semiconductor layers are formed at a predetermined interval in the boundary region of the chip, and the wafer can be separated between the two separation semiconductor layers. An insulating layer can be formed between the two isolation semiconductor layers in the same process as the buried insulating layer.

  (D) The isolation semiconductor layer may be provided with a reinforcing portion in the intersecting region. The reinforcing portion may include a semiconductor layer formed at a corner of the separating semiconductor layer. Further, the reinforcing portion is made of an insulating layer formed in an intersecting region of the isolation semiconductor layer, and the insulating layer can be formed in the same process as the buried insulating layer.

The semiconductor light emitting device according to the present invention has the following configuration reflecting the manufacturing method described above. That is, this semiconductor light-emitting device is a surface-emitting semiconductor light-emitting device that emits light in a direction perpendicular to the semiconductor substrate,
A semiconductor deposited layer having a columnar portion formed on the semiconductor substrate;
An embedded insulating layer made of a resin-based material formed around the columnar part;
An electrode layer formed on at least a part of the upper surface of the columnar part and a part of the upper surface of the buried insulating layer;
A separating semiconductor layer formed on the semiconductor substrate along an edge of the semiconductor substrate.

  The semiconductor light-emitting device of the present invention can further take the following aspects.

  The separation semiconductor layer may be formed in the same process as the semiconductor deposition layer in the columnar portion, and may have the same deposition structure as the columnar portion.

  An end portion of the electrode layer may be located away from the separation semiconductor layer. With this structure, electrical separation between the electrode layer and the semiconductor substrate can be achieved.

  The separating semiconductor layer can be continuously formed along the periphery of the semiconductor substrate. The separating semiconductor layer may be formed discontinuously along the periphery of the semiconductor substrate. Further, the separating semiconductor layer can be formed inside an insulating layer formed along the periphery of the semiconductor substrate.

  The separating semiconductor layer may have a reinforcing portion in the intersecting region. The reinforcing portion may include a semiconductor layer formed at a corner of the separating semiconductor layer. The reinforcing portion may be an insulating layer formed in an intersecting region of the isolation semiconductor layer, and the insulating layer may have the same layer structure as the buried insulating layer.

  The semiconductor light emitting device of the present invention can be applied to a surface emitting semiconductor laser or a surface emitting light emitting diode.

  Hereinafter, an embodiment in which the present invention is applied to a surface emitting semiconductor laser will be described with reference to the drawings.

[First Embodiment]
(Device structure)
FIG. 1 is a plan view of a surface emitting semiconductor laser (hereinafter referred to as “surface emitting laser”) 100 according to a first embodiment of the present invention, and FIG. 2 is taken along the line AA in FIG. FIG.

  First, the structure of the surface emitting laser 100 shown in FIGS. 1 and 2 will be described.

  The surface emitting laser 100 includes a vertical resonator (hereinafter referred to as a “resonator”) 140, a columnar part 110 constituting a part of the resonator 140, and a buried insulating layer 120 formed on the outer periphery of the columnar part 110. And a separating semiconductor layer 130 formed along the edge of the semiconductor substrate 101.

  Specifically, the surface emitting laser 100 includes a semiconductor substrate 101, a buffer layer 102 made of n-type GaAs formed on the semiconductor substrate 101, and a resonator 140.

  The configuration of the resonator 140 is not particularly limited as long as it functions as a resonator of the surface emitting laser 100. For example, the following configuration can be adopted.

The resonator 140 is formed on the buffer layer 102 and has 30 pairs of distributed reflection type multilayer mirrors (hereinafter referred to as “lower mirrors”) in which n-type AlAs layers and n-type Al _0.15 Ga _0.85 As layers are alternately stacked. 103, an n-type cladding layer 104 made of n-type Al _0.5 Ga _0.5 As, an active layer 105 having a multi-well structure comprising a GaAs well layer and an Al _0.3 Ga _0.7 As barrier layer, and the well layer comprising three layers, Al _0.5 A p-type cladding layer 106 made of Ga _0.5 As, and 25 pairs of distributed reflection multilayer mirrors (hereinafter referred to as “upper mirrors”) in which p-type Al _0.85 Ga _0.15 As layers and p-type Al _0.15 Ga _0.85 As layers are alternately stacked. 108) and a contact layer 109 made of p-type GaAs are sequentially stacked.

  The resonator 140 can have a current confinement layer as necessary. This current confinement layer can be provided, for example, between the p-type cladding layer 106 and the upper mirror 108. The current confinement layer can be composed of, for example, a semiconductor layer made of p-type AlAs and an insulating layer formed around the semiconductor layer. This insulating layer can be constituted by an insulator, for example, aluminum oxide, formed in a region of about several μm from the periphery of the current confinement layer. By providing the current confinement layer, the current from the upper electrode layer 113 can be concentrated in the central portion of the columnar portion 110.

  The upper mirror 108 is made p-type by doping with Zn, and the lower mirror 103 is made n-type by doping with Se. Therefore, a pin diode is formed by the upper mirror 108, the active layer 105 not doped with impurities, and the lower mirror 103.

  Further, a portion of the resonator 140 from the laser light emitting side of the surface emitting laser 100 to the n-type cladding layer 104 is etched into a circular shape when viewed from the laser light emitting side, so that the columnar portion 110 is formed. . That is, the columnar part 110 is a part of the resonator 140 and is formed of a columnar semiconductor deposited body. In the present embodiment, the planar shape of the columnar part 110 is circular, but this shape can be any shape.

  In the surface emitting laser 100, a buried insulating layer 120 is buried around the columnar portion 110. That is, the buried insulating layer 120 is formed so as to be in contact with the outer surface of the columnar part 110 and to cover the upper surface of the lower mirror 103.

  As the resin material for forming the buried insulating layer 120, for example, a resin that is cured by irradiation with energy rays such as heat or light, such as a polyimide resin, an acrylic resin, or an epoxy resin, can be used.

  In the surface emitting laser 100, the separating semiconductor layer 130 is continuously formed on the outermost side along the periphery of the semiconductor substrate 101. In the present embodiment, the separation semiconductor layer 130 is formed in the same process as the columnar portion 110, and thus has the same layer structure as the columnar portion 110. As will be described later, the separation semiconductor layer 130 is useful in reliably separating the wafer in the step of separating the wafer into chips in the method of manufacturing the surface emitting laser 100.

  An upper electrode layer 113 having a predetermined pattern is formed on the upper surfaces of the columnar part 110 and the buried insulating layer 120. The upper electrode layer 113 has a pattern in which the end portion is positioned away from the separation semiconductor layer 130. That is, the isolation semiconductor layer 130 and the upper electrode layer 113 are electrically isolated by the buried insulating layer 120. It is desirable that the shortest distance between the upper electrode layer 113 and the separating semiconductor layer 130 is about 10 μm. Since the upper electrode layer 113 and the separation semiconductor layer 130 are at least so far apart, for example, contact between the bonding bump formed on the upper electrode layer 113 and the separation semiconductor layer 130 is sufficiently avoided. be able to. A buried insulating layer 120 is also provided between the columnar part 110 and the isolation semiconductor layer 130.

  Further, an opening 116 serving as a laser beam emission port is formed at the center of the upper surface of the columnar part 110. In addition, a lower electrode layer 115 is formed on the surface of the semiconductor substrate 101 opposite to the side where the resonator 140 is formed. Note that the lower electrode layer 115 is formed at least in a portion corresponding to the region where the separation semiconductor layer 130 is formed so as not to hinder the separation using the separation semiconductor layer 130 in the step of separating into subsequent chips. It is desirable not to be.

  The operation of the surface emitting laser 100 according to the first embodiment will be described below.

  When a forward voltage is applied to the pin diode between the upper electrode layer 113 and the lower electrode layer 115, recombination of electrons and holes occurs in the active layer 105, and light emission due to the recombination occurs. Stimulated emission occurs when the generated light reciprocates between the upper mirror 108 and the lower mirror 103, and the intensity of the light is amplified. When the optical gain exceeds the optical loss, laser oscillation occurs, and laser light is emitted in a direction perpendicular to the semiconductor substrate 101 from the opening of the upper electrode layer 113.

  Further, according to the present embodiment, as will be described in detail later, since the wafer is accurately separated, the shape stability of the resonator 140 is high, and the surface emitting laser 100 having a uniform structure can be obtained. . As a result, according to the surface emitting laser 100 of the present embodiment, there are few variations in terms of threshold current, current gain, emission power, and the like due to its shape stability.

(Device manufacturing process)
Next, a method for manufacturing the surface emitting laser 100 according to the present embodiment will be described with reference to FIGS. 3 to 8 are views of the wafer 1000 schematically showing the steps of the method for manufacturing the surface emitting laser 100 according to the present embodiment. Here, the wafer 1000 includes a wafer in any state having a layer formed in each process on a semiconductor substrate.

  The method for manufacturing the surface emitting laser 100 according to the present embodiment includes the following steps (a) to (c).

(A) forming a semiconductor deposition layer 150 having a plurality of columnar portions 110 on the semiconductor substrate 101;
(B) forming a buried insulating layer 120 made of a resin-based material around the columnar part 110; and
(C) A step of separating the wafer, that is, the semiconductor substrate 101 and the layer on the semiconductor substrate 101 to form a chip.

  Then, in the step of forming the semiconductor deposition layer 150 having the columnar portions 110, the separation semiconductor layer 130 having a predetermined pattern is formed in the boundary region of the chip. In the step of forming the buried insulating layer 120, at least the upper surface of the isolation semiconductor layer 130 is exposed. Further, in the step of forming the chip, the separation of the chip is performed using the separation semiconductor layer 130.

  Hereafter, the manufacturing method of this Embodiment is demonstrated more concretely with reference to drawings.

(A) A semiconductor deposition layer 150 is formed on the surface of the semiconductor substrate 101 made of n-type GaAs shown in FIG. 4 by epitaxial growth while modulating the composition. Here, as shown in FIG. 2, the semiconductor deposition layer 150 includes a buffer layer 102 made of n-type GaAs, a lower mirror 103 in which n-type AlAs layers and n-type Al _0.15 Ga _0.85 As layers are alternately laminated. , An n-type cladding layer 104 made of n-type Al _0.5 Ga _0.5 As, an active layer 105 having a multi-well structure comprising a GaAs well layer and an Al _0.3 Ga _0.7 As barrier layer, and the well layer comprising three layers, Al _0.5 Ga _A p-type cladding layer 106 made of _0.5 As, an upper mirror 108 in which p-type Al _0.85 Ga _0.15 As layers and p-type Al _0.15 Ga _0.85 As layers are alternately stacked, and a contact layer 109 made of p-type GaAs are provided. The surface of the semiconductor substrate 101 refers to a surface of the semiconductor substrate 101 on the side where the resonator 140 is formed in a later process.

  The temperature at which the epitaxial growth is performed is appropriately determined depending on the type of the semiconductor substrate 101 or the type and thickness of the semiconductor deposition layer 150 to be formed, but it is generally preferably 600 ° C. to 800 ° C. Further, the time required for performing the epitaxial growth is also appropriately determined in the same manner as the temperature. As a method for epitaxial growth, a metal-organic vapor phase epitaxy (MOVPE) method, an MBE method (Molecular Beam Epitaxy) method, or an LPE method (Liquid Phase Epitaxy) can be used.

  Next, as shown in FIGS. 3 and 4, the semiconductor deposition layer 150 is patterned to form the columnar portion 110 constituting a part of the resonator 140 (see FIG. 2) and the separating semiconductor layer 130. FIG. 3 is a plan view of the wafer 1000, and FIG. 4 is a cross-sectional view taken along the line BB of FIG.

  Specifically, a photoresist layer (not shown) having a predetermined pattern is formed by applying a photoresist (not shown) to the semiconductor deposition layer 150 and then patterning the photoresist by photolithography. Next, by dry etching using this resist layer as a mask, the upper part of the semiconductor deposition layer 150 (the contact layer 109, the upper mirror 108, the p-type cladding layer 106, the active layer 105, and the n-type cladding layer 104 shown in FIG. Corresponding layers) are etched to form a plurality of columnar portions 110 made of columnar semiconductor deposits, and a separating semiconductor layer 130 continuous so as to surround each columnar portion 110. In the present embodiment, as shown in FIG. 3, the semiconductor layer for separation 130 is formed along the boundary region of the chip and has a rectangular ring shape. In FIG. 3, a broken line 1100 indicates a separation line when a chip is formed.

  Next, a current confinement layer is formed as necessary.

  Specifically, for example, the p-type AlAs layer formed between the p-type cladding layer 106 and the upper mirror 108 is exposed to a water vapor atmosphere at about 400 ° C. By this step, the AlAs layer is oxidized inward from the exposed surface, and aluminum oxide which is an insulator is formed. That is, the outer peripheral portion of the p-type AlAs layer is oxidized, and a current confinement layer made of aluminum oxide is formed on the outer periphery of the p-type AlAs layer.

  (B) Next, as shown in FIGS. 5 and 6, a buried insulating layer 120 made of a resin-based material is formed.

  Specifically, first, a liquid resin or a liquid resin precursor is applied onto the wafer 1000 and then dried. As a coating method, known techniques such as a spin coating method, a dipping method, and a spray coating method can be used.

  Next, the buried insulating layer 120 is cured by irradiating the resin material on the wafer 1000 with energy rays such as heat or light. Subsequently, the upper resin layer of the buried insulating layer 120 is removed to expose the upper surfaces of the columnar portion 110 and the isolation semiconductor layer 130. As a method for removing the resin layer, a method of patterning a resin using photolithography, an etch back method using dry etching, a CMP method, a method of patterning by photolithography using a photosensitive resin material, a wet etching of the resin layer A known method such as a development dip method for removing by the above can be used.

  Through the above steps, the buried insulating layer 120 can be formed between the columnar portion 110 and the isolation semiconductor layer 130.

  As the resin liquid or resin precursor liquid used in the above process, a resin that is cured by irradiation with energy rays such as heat and light is used. Examples of the resin liquid include polyacrylic resins and epoxy resins. Moreover, a polyimide precursor can be mentioned as a liquid material of a resin precursor.

  Examples of the polyimide resin include polyamic acid and long-chain alkyl ester of polyamic acid. When a polyimide resin is used as the resin precursor liquid, an imidization reaction takes place by applying the polyimide precursor liquid on the wafer and then heat-treating to form a polyimide resin. Although the temperature of the said heat processing changes with kinds of polyimide precursor, 150-400 degreeC is suitable.

  Further, when a polyacrylic resin or an epoxy resin is used as the resin liquid, it is preferable to use an ultraviolet curable polyacrylic resin or an epoxy resin. Since the ultraviolet curable resin can be cured only by ultraviolet irradiation, there is no problem that the element is damaged by heat.

  (C) As shown in FIGS. 7 and 8, an upper electrode layer 113 and a lower electrode layer 115 are formed. FIG. 7 is a plan view of the wafer 1000, and FIG. 8 is a cross-sectional view taken along the line BB of FIG.

  Specifically, for example, by forming an alloy layer made of gold or zinc on the upper surface of the columnar portion 110 and the buried insulating layer 120 by, for example, vacuum deposition, patterning the alloy layer using photoetching, Opening 116 is formed. Through the above steps, the upper electrode layer 113 is formed. Subsequently, an alloy layer composed of gold and germanium is formed on the back surface of the semiconductor substrate 101 (the surface opposite to the surface on which the resonator 140 is formed in the semiconductor substrate 101) by, for example, vacuum deposition, and then photoetching is performed. The lower electrode layer 115 is formed by patterning the alloy layer using

  (D) Next, as shown in FIG. 7, the chip of the surface emitting laser 100 is formed by separating the wafer 1000 along the assumed separation line 1100 on the separation semiconductor layer 130.

  As a method for separating the wafer, at least one of a scribing method and a dicing method using the cleavage of the compound semiconductor can be used. As the scribing method, either full surface scribing or end surface scribing can be used. In this embodiment, since the semiconductor layer for separation 130 is exposed in the entire region of the boundary region of the chip where the separation line 1100 is set, a scribe is formed by forming a scratch along the separation line 1100 with a diamond scriber or the like. The chip can be formed by reliably separating the wafer 1000 by the method.

  Through the above process, the surface emitting laser 100 shown in FIGS. 1 and 2 is obtained.

  According to the method for manufacturing surface-emitting laser 100 according to the present embodiment, in the separation process of wafer 1000, there is no layer made of a resin material in the separation part of wafer 1000, that is, the boundary region of the chip, Only the semiconductor layer 130 is present. As a result, the wafer 1000 can be separated reliably and easily. Further, since the separation semiconductor layer 130 can be cleaved in the same manner as the semiconductor substrate 101, a scribing method can be used as the separation means for the wafer 1000 as described in (d) above.

  In the present embodiment, dicing can be used when the wafer 1000 is separated into chips of the surface emitting laser 100. In this case, only the separating semiconductor layer 130 is present at the portion of the dicing saw to be shaved, and there is no resin insulating layer. For this reason, there is no contamination of the dicing saw by the resin, and the particles can be easily cleaned because there are no resin-based particles.

[Second Embodiment]
9 and 10 are plan views schematically showing one step of the method for manufacturing the surface emitting laser according to the present embodiment. These figures correspond to FIG. 7 showing the first embodiment.

  The surface emitting lasers 200 and 300 according to the present embodiment are different from the surface emitting laser 100 according to the first embodiment in that the separation semiconductor layer 130 is formed discontinuously. Except for this point, the second embodiment is basically the same as the first embodiment, and therefore, parts having substantially the same functions are denoted by the same reference numerals and detailed description thereof is omitted.

  In the wafer 1000 having the surface emitting laser 200 shown in FIG. 9, a separation semiconductor layer 130 is formed along the boundary region of the chip. The separation semiconductor layer 130 is composed of partial semiconductor layers 132 arranged apart along the separation line 1100. In the illustrated example, the partial semiconductor layer 132 is formed in a state where a line-shaped semiconductor layer is divided, and an insulating layer 122 that is continuous with the buried insulating layer 120 is provided between the partial semiconductor layers 132.

  The form of the partial semiconductor layer constituting the separation semiconductor layer 130 is not limited to that shown in FIG. 9 and can take various forms. For example, in the wafer 1000 having the surface emitting laser 300 shown in FIG. 10, the separation semiconductor layer 130 is composed of dot-shaped partial semiconductor layers 134 that are arranged along the separation line 1100.

  The wafer 1000 having these surface emitting lasers 200 and 300 also has the same operational effects as the surface emitting laser 100 according to the first embodiment. That is, by separating the semiconductor substrate 101, the separating semiconductor layer 130, and the insulating layer 122 along the separation line 1100, the chips of the surface emitting lasers 200 and 300 can be reliably and easily formed.

  In the present embodiment, the resin-based insulating layer 122 is discontinuously present along the separation line 1100. However, by appropriately setting the size and arrangement of the insulating layer 122, the separation of the wafer 1000 is not hindered. Can be. In addition, the presence of the insulating layer 122 makes it possible to make the thickness of the buried insulating layer 120 uniform in the boundary region between adjacent surface emitting lasers, and to reduce variations in elements.

  As a method for separating the wafer 1000, as in the first embodiment, at least one of a scribing method for separating by utilizing cleavage of a compound semiconductor and dicing can be used. In this case, when the end face scribing method is used, the wafer 1000 can be most reliably separated.

  The surface emitting lasers 200 and 300 according to the present embodiment have a structure in which the separated partial semiconductor layers 132 and 134 are discontinuously arranged at the edge.

[Third Embodiment]
FIG. 11 is a plan view schematically showing one step of the method for manufacturing the surface emitting laser according to the present embodiment, and FIG. 12 is a cross-sectional view taken along the line CC of FIG. FIG. 11 corresponds to FIG. 7 showing the first embodiment.

  The surface emitting laser 400 according to this embodiment is different from the surface emitting laser 100 according to the first embodiment in the configuration of the separation semiconductor layer. Except for this point, the second embodiment is basically the same as the first embodiment, and therefore, parts having substantially the same functions are denoted by the same reference numerals and detailed description thereof is omitted.

  In the wafer 1000 having the surface emitting laser 400 shown in FIGS. 11 and 12, two separation semiconductor layers 130a and 130b are formed along the boundary region between the chips. The separation semiconductor layers 130a and 130b are continuous. An insulating layer 120a is formed between the separation semiconductor layer 130a and the separation semiconductor layer 130b. The insulating layer 120a is formed in the same process as the buried insulating layer 120.

  In the present embodiment, the wafer 1000 can be separated into chips by dicing the insulating layer 120a along the separation line 1100. Since the insulating layer 120a is partitioned by the separating semiconductor layers 130a and 130b, external force can be dispersed by the separating semiconductor layers 130a and 130b even if a certain pressure is applied to the insulating layer 120a by dicing. Therefore, the wafer 1000 can be separated by dicing without adversely affecting the characteristics of the surface emitting laser 400.

  The surface emitting laser 400 according to the present embodiment has a structure in which the insulating layer 120a after separation and the separation semiconductor layer 130a or 130b are continuously arranged inside the edge portion.

[Fourth Embodiment]
FIGS. 13A to 13C are partial plan views showing main parts of the present embodiment.

  The surface emitting laser according to the present embodiment differs from the surface emitting laser according to the first embodiment in the configuration of the separation semiconductor layer. Except for this point, the second embodiment is basically the same as the first embodiment, and therefore, parts having substantially the same functions are denoted by the same reference numerals and detailed description thereof is omitted.

  In this embodiment mode, the separation semiconductor layer 130 is reinforced in a region where the separation lines 1100 intersect.

  For example, in the example shown in FIG. 13A, corners 130c and 130c made of a pair of semiconductor layers are formed symmetrically with respect to one of the separation lines 1100 in the intersecting region of the separation semiconductor layer 130. Yes. The corners 130 c are patterned in the same process as the separation semiconductor layer 130. By forming such a corner portion 130c, the corner of the separating semiconductor layer 130 is reinforced. As a result, when the wafer 1000 is separated along the separation line 110, chip corners are less likely to be chipped. In the example shown in the drawing, for example, if the separation is performed along the vertical separation line 1100 and then separated along the horizontal separation line 1100 in the direction of the arrow, this effect is easily exhibited.

  In the example shown in FIG. 13B, the insulating layer 124 is formed in part of the intersecting region of the isolation semiconductor layer 130. This insulating layer 124 is formed in the same process as the buried insulating layer 120 made of a resin-based material, and is harder to break than a semiconductor. Therefore, when the separating semiconductor layer 130 is separated, chip corners are less likely to be chipped. In the illustrated example, the insulating layer 124 has a circular planar shape, but the planar shape of the insulating layer 124 is not limited to this.

  Similarly, in the example illustrated in FIG. 13C, the insulating layer 126 is formed in the intersecting region of the isolation semiconductor layer 130. The insulating layer 126 is formed in the same process as the buried insulating layer 120 made of a resin-based material, and is harder to break than a semiconductor. Therefore, when the separating semiconductor layer 130 is separated, the chip corner is less likely to be chipped.

  The structure of this embodiment can be basically applied to the surface emitting laser of the present invention, and can be applied to, for example, the first and second embodiments.

In the present embodiment described above, the n-type buffer layer 102 to the p-type contact layer 109 are sequentially formed on the semiconductor substrate 101, but these may be of opposite conductivity types. That is, in the resonator 140 shown in FIG. 2, the buffer layer 102 is p-type GaAs, the lower mirror 103 is a layer in which p-type AlAs layers and p-type Al _0.15 Ga _0.85 As layers are alternately stacked, and the cladding layer 104 is p-type. P-type clad layer made of n-type Al _0.5 Ga _0.5 As, clad layer 106 made of n-type clad layer made of n-type Al _0.5 As, upper mirror 108 made of n-type Al _0.85 Ga _0.15 As layer and n-type Al _0.15 Ga _0.85 As layer The contact layer 109 may be n-type GaAs. In this case, the columnar portion formed as a resonator has a lower resistance than that described above.

  When the resonator 140 is formed with the conductivity type reversed, the polarities of the upper electrode 113 and the lower electrode 115 formed in a later process are also reversed. That is, the upper electrode is formed using, for example, an alloy layer composed of gold and germanium, and the lower electrode is formed using an alloy layer also composed of gold or zinc.

  In addition, the composition ratio of Al and Ga in the lower mirror 103 and the upper mirror 108 is not limited to this, and the composition can be determined by appropriately designing according to the wavelength of the target laser beam.

  As mentioned above, although the example which applied this invention to the surface emitting laser was described, this invention is not limited to this, A various aspect can be taken within the range of the summary of this invention. For example, the present invention can be applied to a surface emitting semiconductor light emitting device having a columnar portion made of a semiconductor layer and a buried insulating layer made of a resin-based material, and is applicable not only to a surface emitting laser but also to a surface emitting light emitting diode. Applicable.

1 is a plan view schematically showing a surface emitting semiconductor laser according to a first embodiment of the present invention. It is sectional drawing along the AA line of FIG. It is a top view which shows typically 1 process of the manufacturing method of the surface emitting semiconductor laser concerning the 1st Embodiment of this invention. It is sectional drawing along the BB line of FIG. It is sectional drawing which shows typically 1 process of the manufacturing method of the surface emitting semiconductor laser concerning the 1st Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the surface emitting semiconductor laser concerning the 1st Embodiment of this invention. It is a top view which shows typically 1 process of the manufacturing method of the surface emitting semiconductor laser concerning the 1st Embodiment of this invention. It is sectional drawing along the BB line of FIG. It is a top view which shows typically 1 process of the manufacturing method of the surface emitting semiconductor laser concerning the 2nd Embodiment of this invention. It is a top view which shows typically 1 process of the manufacturing method of the surface emitting semiconductor laser concerning the 2nd Embodiment of this invention. It is a top view which shows typically 1 process of the manufacturing method of the surface emitting semiconductor laser concerning the 3rd Embodiment of this invention. It is sectional drawing along CC line of FIG. (A)-(C) are each a top view which shows typically 1 process of the manufacturing method of the surface emitting semiconductor laser concerning the 4th Embodiment of this invention.

Explanation of symbols

  100, 200, 300, 400 Surface emitting semiconductor laser (surface emitting laser), 101 semiconductor substrate, 102 buffer layer, 103 lower mirror, 104 n-type cladding layer, 105 active layer, 106 p-type cladding layer, 108 upper mirror, 109 contact layer, 110 columnar portion, 113 upper electrode, 115 lower electrode, 116 opening, 120 buried insulating layer, 120a insulating layer, 130, 130a, 130b separating semiconductor layer, 132, 134 partial semiconductor layer, 140 resonator, 150 semiconductor deposition layers, 1000 wafers, 1100 separation lines

Claims (22)

Forming a semiconductor deposition layer having a plurality of columnar portions on a semiconductor substrate;
Forming a buried insulating layer made of a resin-based material around the columnar part; and
Separating the semiconductor substrate and the layers on the semiconductor substrate to form a chip,
In the step of forming the semiconductor deposition layer having the columnar part, a separation semiconductor layer having a predetermined pattern is formed in a boundary region of the chip,
In the step of forming the buried insulating layer, exposing at least the upper surface of the isolation semiconductor layer; and
A method of manufacturing a surface-emitting type semiconductor light emitting device, wherein in the step of forming the chip, the separation is performed using the semiconductor layer for separation. In claim 1,
The columnar section and the separating semiconductor layer are formed by forming a semiconductor deposition layer on the semiconductor substrate, and then patterning by lithography and etching. In claim 1 or 2,
A method of manufacturing a surface-emitting type semiconductor light emitting device, comprising a step of forming an electrode layer having a predetermined pattern after the step of forming the buried insulating layer. In claim 3,
The electrode layer is a method for manufacturing a surface-emitting type semiconductor light emitting device, wherein an end portion of the electrode layer is formed apart from the separating semiconductor layer. In any of claims 1 to 4,
The method for manufacturing a surface-emitting type semiconductor light emitting device, wherein the isolation semiconductor layer is formed continuously in a boundary region of the chip, and the isolation is performed along the isolation semiconductor layer. In any of claims 1 to 4,
The method for manufacturing a surface-emitting type semiconductor light emitting device, wherein the separation semiconductor layer is formed discontinuously in a boundary region of the chip, and the separation is performed along the separation semiconductor layer. In any of claims 1 to 4,
A method of manufacturing a surface-emitting type semiconductor light emitting device, wherein two separation semiconductor layers are formed at a predetermined interval in a boundary region of the chip, and the separation is performed between the separation semiconductor layers. In claim 7,
A method for manufacturing a surface-emitting type semiconductor light emitting device, wherein an insulating layer is formed between the two isolation semiconductor layers in the same step as the buried insulating layer. In any one of Claims 1 thru | or 6.
The isolation semiconductor layer is a method for manufacturing a surface-emitting type semiconductor light-emitting device in which a reinforcing portion is formed in an intersecting region. In claim 9,
The reinforcing part is a method for manufacturing a surface-emitting type semiconductor light emitting device, comprising a semiconductor layer formed at a corner of the separating semiconductor layer. In claim 9,
The method of manufacturing a surface-emitting type semiconductor light emitting device, wherein the reinforcing portion is formed of an insulating layer formed in an intersecting region of the isolation semiconductor layer, and the insulating layer is formed in the same process as the buried insulating layer. A surface emitting semiconductor light emitting device that emits light in a direction perpendicular to a semiconductor substrate,
A semiconductor deposited layer having a columnar portion formed on the semiconductor substrate;
An embedded insulating layer made of a resin-based material formed around the columnar part;
An electrode layer formed on at least a part of the upper surface of the columnar part and a part of the upper surface of the buried insulating layer;
A surface-emitting type semiconductor light emitting device including a separating semiconductor layer formed on the semiconductor substrate along an edge of the semiconductor substrate. In claim 12,
The surface-emitting type semiconductor light emitting device, wherein the separation semiconductor layer has the same deposition structure as the semiconductor deposition layer in the columnar portion. In claim 12 or 13,
The electrode layer is a surface-emitting type semiconductor light emitting device in which an end portion thereof is located apart from the separating semiconductor layer. In any of claims 12 to 14,
The surface-emitting type semiconductor light emitting device, wherein the separating semiconductor layer is formed continuously along the periphery of the semiconductor substrate. In any of claims 12 to 14,
The surface-emitting type semiconductor light emitting device, wherein the separating semiconductor layer is formed discontinuously along the periphery of the semiconductor substrate. In any of claims 12 to 14,
The surface-emitting type semiconductor light emitting device, wherein the separating semiconductor layer is formed inside an insulating layer formed along the periphery of the semiconductor substrate. In any of claims 12 to 16,
The isolation semiconductor layer is a surface-emitting type semiconductor light emitting device in which a reinforcing portion is formed in an intersecting region. In claim 18,
The reinforcing portion is a surface light emitting semiconductor light emitting device including a semiconductor layer formed at a corner of the separating semiconductor layer. In claim 18,
The reinforcing portion includes an insulating layer formed in an intersecting region of the isolation semiconductor layer, and the insulating layer has the same layer structure as the buried insulating layer. In any of claims 12 to 20,
The columnar portion is a surface-emitting type semiconductor light emitting device that constitutes at least a part of a resonator of a semiconductor laser. In any of claims 12 to 20,
The columnar portion is a surface-emitting type semiconductor light emitting device that constitutes at least a part of a light emitting diode.

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