JP2007169677A - Film deposition apparatus and film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of efficiently depositing a thin film having a high film quality. <P>SOLUTION: The film deposition apparatus 1 includes a magnetic field forming device 5, and the magnetic field forming device 5 forms first and second magnetic line groups Ma, Mb being parallel to each other and having opposite directions at the inside of a vacuum tank 2. When first and second vapor deposition sources 30a, 30b are selected one by one and charged particles are discharged in order, it is possible to allow the charged particles discharged from the first and second vapor deposition sources 30a, 30b to reach the same substrate by forming the magnetic line groups capable of bending charged particles having the same charge, in the charged particles discharged from the first and second vapor deposition sources 30a, 30b, to the same direction. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a film forming apparatus and a film forming method using the film forming apparatus.

Reference numeral 101 in FIG. 10 denotes a conventional film forming apparatus.
The film forming apparatus 101 has a vacuum chamber 102, and a vapor deposition source 130 is attached to the bottom wall of the vacuum chamber 102.

  The vapor deposition source 130 includes a cylindrical anode electrode 131 and a discharge unit 135 disposed inside the anode electrode 131. The discharge unit 135 includes a vapor deposition material 134 and a trigger electrode 132, and the trigger electrode 132 and the vapor deposition material 134 are each connected to a power supply device 141.

  An evacuation system 109 is connected to the vacuum chamber 102. After the vacuum chamber 102 is evacuated by the evacuation system 109 to form a vacuum atmosphere, the trigger electrode is placed with the anode electrode 131 at the ground potential. When a trigger discharge occurs between 132 and the vapor deposition material 134, an arc discharge is induced between the anode electrode 131 and the vapor deposition material 134 by the trigger discharge.

  When the arc discharge is induced, an arc current flows from the anode electrode 131 toward the vapor deposition material 134, and particles of the vapor deposition material 134 are emitted from the side surface of the vapor deposition material 134. Among the particles of the vapor deposition material, the charged particles are bent after the flight by the magnetic field formed by the arc current, and are released into the vacuum chamber 102 from the opening 136 of the anode electrode 131.

  The substrate holder 107 rotates in a horizontal plane so that the substrate 111 passes through a position facing the opening 136. When the substrate 111 passes through a position facing the opening 136, charged particles reach the surface of the substrate 111 and the deposition material A thin film is formed.

  In the above-described film forming apparatus 101, the amount of film formation is determined by the number of arc discharges. Therefore, even a very thin film (1 to 2 nm) can be formed with good control by setting the number of arc discharges.

  Further, since the flight speed of particles emitted from the vapor deposition source 130 is as fast as 10,000 m / sec or less (reference: J, Vac. Sec. Jpn (vacuum) Vol. 47, No. 9, 2004 pl3), the film is very flat. (Ulvac technical Journal No. 49 1998 p9).

  This feature is suitable for a process of laminating magnetic and nonmagnetic materials such as MRAM with a thin film of nm, such as MRAM. For example, when it is necessary to stack Co.FeNi / Ta / Py / Ir.Mn or the like in units of nm, if an apparatus having four deposition sources 130 mounted in the vacuum chamber 102 is used, The above materials can be laminated.

  In the coaxial vacuum arc deposition source 130 shown in FIG. 10, it has been confirmed that the ratio of the alloy used for the cathode material (deposition material 134) and the ratio of the alloy in the formed thin film are substantially equal. By using a cathode material having an alloy ratio of, a thin film having a desired alloy ratio is formed.

  By the way, when the arc current flows, a part of the vapor deposition material 134 is melted, and a melt (droplet) having a diameter of about 50 to 100 μm is discharged from the melted portion. Reference numeral 146 in FIG. 11 shows the droplet. The droplet 146 is discharged as it is from the opening 136 or collides with the inner wall surface of the anode electrode 131 to become a fine droplet 146 having a diameter of about 1 to 5 μm. Released from the opening 136.

  Therefore, large and small droplets 146 are emitted from the opening 136 in addition to the charged particles 145. The droplet 146 has a diameter of 1 μm or more, both large and small, and is very large compared to charged particles. When such droplets 146 are mixed into the thin film being formed, the film quality is deteriorated, and the function of the device obtained after the film formation is deteriorated.

  Various methods have been devised for removing the droplet 146. For example, a filter such as a water wheel (hereinafter referred to as a “Vane type filter”) is rotated at a high speed in front of the arc deposition source 130, and the charged particle 145 is determined from the difference in flight speed between the droplet 146 and the charged particle 145. It captures a droplet 146 of 1 μm or more whose flight speed is slower than that. However, in the method using this Vane type filter, it must be rotated at a very high speed depending on the kind of the vapor deposition material, and there are many problems from the viewpoint of cost and safety.

  As another method, there is a method of transporting charged particles by forming magnetic lines of force along the traveling direction from the opening 136 toward the substrate 111 (see, for example, Patent Documents 2 and 3). In this method, not only the apparatus becomes large, but also the distance of the transport space from the opening 136 to the substrate 111 is long, the amount of charged particles reaching the substrate 111 is reduced, and the film formation efficiency is deteriorated.

  Further, when the magnetic field forming means is arranged in the vacuum chamber 102 to form the transport space, the droplet collides with the magnetic field forming means to generate fine droplets, and the droplets are formed on the thin film being formed. There was also a new problem of contamination.

  Further, in a system in which a magnetic circuit bent by 90 degrees or more is formed using a yoke and a magnet, and the magnetic field lines of the magnetic circuit and the diffusion direction of the charged particles are made the same to deflect the flight direction of the charged particles (for example, patent document) 4), the droplets can be reduced, but the magnetic flux line approaches the magnet, the magnetic flux density increases, the charged particles converge, the density of the flying particles increases, and there is a problem that the large area cannot be irradiated uniformly.

  Therefore, according to the prior art, even if a plurality of types of films can be stacked in units of nm, it is difficult to prevent droplets from being mixed and form each film uniformly over a wide area.

In addition, when a plurality of deposition sources 130 are mounted in the vacuum chamber 102 in order to stack a plurality of types of films on the substrate, a complicated apparatus such as the above-described Vane filter is vacuumed by the number of deposition sources 130. There is a problem that it is necessary to install in the tank 102, and the film forming apparatus 101 becomes large and the structure thereof is complicated.
“Journal of the Vacuum Society of Japan” 2004, Vol. 47, No. 9, p. l3 “Ulvac technical Journal”, ULVAC Corporate Center, Inc., 1998. 49, p. 9 JP 2000-8157 A JP 2003-321769 A JP 2004-197177 A JP 2004-225107 A

  The present invention is for solving the above-mentioned problems, and an object of the present invention is to uniformly form a plurality of types of films without mixing droplets.

In order to solve the above-mentioned problems, a first aspect of the present invention provides a vacuum chamber, first and second vapor deposition sources that emit charged particles inside the vacuum chamber, and a magnetic field that forms lines of magnetic force in the vacuum chamber. The magnetic field forming device includes: first and second magnet members that form different magnetic poles facing each other, and form the lines of magnetic force in a deflection region in which the magnetic poles face each other; and the first and second magnets A reversing device for reversing the polarities of the magnetic poles facing each other and reversing the direction of the lines of magnetic force, and the first and second vapor deposition sources respectively enter charged particles from opposite directions into the deflection region And a film forming apparatus configured to exert a Lorentz force in the same direction on charged particles having the same charge.
A second aspect of the present invention is the film forming apparatus according to the first aspect, wherein the first and second magnet members are composed of permanent magnets, and the reversing device is the first and second magnet members. The film forming apparatus rotates the first and second magnet members so that the positions of the N pole and the S pole are switched.
A third aspect of the present invention is the film forming apparatus according to the second aspect, wherein the reversing device has first and second rotating shafts, and the first and second magnet members are the first and second rotating shafts. The film forming apparatus is configured to rotate around the central axis of the first and second rotating shafts.
According to a fourth aspect of the present invention, in the film forming apparatus according to the third aspect, the first and second magnet members are plate-shaped, and one end portions are attached to the first and second rotating shafts. The film forming apparatus.
A fifth aspect of the present invention is the film forming apparatus according to any one of the first to fourth aspects, wherein the reversing device is configured such that the first and second magnet members have different magnetic poles facing each other. The first and second magnet members are arranged to face each other in parallel when they are stationary at the first position and at the second position, respectively. The film forming apparatus.
The invention according to claim 6 is the film forming apparatus according to claim 5, wherein the first and second vapor deposition sources are formed when the first and second magnet members are stationary at the first position. A film forming apparatus that discharges the charged particles in a direction perpendicular to both the magnetic field lines formed and the magnetic field lines formed when the first and second magnet members are stationary at the second position.
A seventh aspect of the present invention is the film forming apparatus according to the first aspect, wherein the first and second magnet members are composed of electromagnets, and the reversing device energizes the first and second magnet members. A film forming apparatus configured to change the direction of the magnetic field lines formed by the first and second magnet members.
According to an eighth aspect of the present invention, the first and second magnet members are yokes, and the reversing device includes magnetizing means in which magnetic poles having different polarities are formed, and the magnetic poles of the magnetizing means are 2. The film forming apparatus according to claim 1, wherein different magnetic poles are formed at positions of the first and second magnet members facing each other when contacting the first and second magnet members, respectively. The reversing device is a film forming device configured to reverse the polarity of the magnetic poles of the magnetizing means contacting the first and second magnet members.
A ninth aspect of the present invention is the film forming apparatus according to the eighth aspect, wherein the reversing device rotates the magnetizing means and exchanges the magnetic poles in contact with the first and second magnet members. The film forming apparatus.
A tenth aspect of the present invention is the film forming apparatus according to the ninth aspect, wherein the magnetization means rotates about a rotation axis passing through a center between the magnetic poles formed on the magnetization means. It is the film-forming apparatus comprised in this.
According to an eleventh aspect of the present invention, the first and second vapor deposition sources emit the charged particles from opposite directions toward the same emission space, and the first and second magnet members are the first and second magnet members, respectively. 11. The film forming apparatus according to claim 8, which is disposed on both sides of a flight range of the charged particles emitted from the second vapor deposition source, toward each of the emission spaces. The discharge direction of the charged particles of the first and second vapor deposition sources is a reverse direction, and the third and fourth vapor deposition sources that emit the charged particles in a substantially vertical direction, and the third and fourth vapor deposition sources. The third and fourth magnet members disposed on both sides in the flight direction of the charged particles emitted by the four deposition sources, and the first to fourth deposition sources are the first and second The film forming apparatus is arranged so that a line segment connecting the vapor deposition sources intersects with the line segments connecting the third and fourth vapor deposition sources substantially perpendicularly.
Invention of Claim 12 has a vacuum chamber, the 1st and 2nd vapor deposition source which discharge | releases a charged particle inside the said vacuum chamber, and the magnetic field formation apparatus which forms a magnetic force line in the said vacuum chamber, The magnetic field forming device includes a power source and two sets of two unit electromagnets connected to the power source and facing each other across a space from which the charged particles are emitted, and each unit electromagnet is applied with a voltage from the power source. Then, the first magnetic field lines formed between the unit electromagnets of one set and the second magnetic field lines formed between the unit electromagnets of the other set are arranged in parallel to each other, The power source is configured to apply a voltage so that the other direction of the first magnetic field lines and the second magnetic field lines are opposite to each other, and the first and second evaporation sources are the first , Charged particles from different directions on the second magnetic field lines Is incident, it is configured film forming apparatus to exert a Lorentz force in the same direction to the charged particles of the same charge.
A thirteenth aspect of the present invention is the film forming apparatus according to the twelfth aspect, wherein the power source is configured not to energize the other set of unit electromagnets when energized to the one set of unit electromagnets. Film forming apparatus.
The invention according to claim 14 is the four vapor depositions that are arranged at equal intervals on the same circumference as the vacuum chamber and discharge charged particles from the opening toward the center located inside the vacuum chamber on the circumference. A source, four yokes in the radial direction from the center of the circumference to the outside, each positioned behind the opening, and passing through the center of the circumference and perpendicularly intersecting the plane on which the circumference is located Magnetizing means arranged on an extension line of the rotating axis and rotating around the rotating axis, the magnetizing means being behind the opening that emits charged particles from the opposite direction to the center of the circumference. It is a film forming apparatus in which a magnetic pole having a different polarity is formed at a position where it comes into contact with the yoke that is positioned and contacts the yoke of the magnetizing means.
A fifteenth aspect of the present invention is the film forming apparatus according to the fourteenth aspect, wherein the magnetizing unit is rotated about the rotation axis with the moving mechanism that allows the yoke to be attached and detached, and the magnetizing unit that is separated from the yoke. A film forming apparatus having a rotation mechanism.

  Even if multiple evaporation sources that emit charged particles from different directions are provided inside the vacuum chamber, electrons of the charged particles emitted from each evaporation source are bent by the Lorentz force due to the magnetic field, and ions are caused by the Coulomb force due to the electron flow. By following the electron orbit side, it is bent in the same direction and reaches the same substrate, so that a plurality of thin films can be stacked on the surface of the substrate.

  Large particles and neutral particles having a small charge-mass ratio are not bent in the flight direction due to the lines of magnetic force and travel straight, so that only charged particles having a large charge-mass ratio reach the substrate surface. Therefore, a thin film with good film quality is laminated on the substrate surface. The first and second magnet members and the reversing device have a simple structure of the conventional droplet removing means, and the installation space can be reduced. Since the first and second magnet members and the reversing device can be installed outside the vacuum chamber, the droplets do not collide and the scattering of the droplets is suppressed as compared with the conventional case.

  Reference numeral 1 in FIG. 1 is a film forming apparatus according to a comprehensive example, and reference numerals 5a to 5d in FIGS. 3 to 6 described later are examples 1 to 1 which are more specific examples of the above comprehensive example. 4 shows a film forming apparatus 4.

  First, the film forming apparatus 1 of a comprehensive example will be described. The film forming apparatus 1 includes a vacuum chamber 2, first and second vapor deposition sources 30a and 30b, and a magnetic field forming device 5. The magnetic field forming device 5 includes a first magnetic force line group Ma extending in the same direction and a second magnetic force line group Mb parallel to the first magnetic force line group Ma and extending in the opposite direction. It can be formed in a predetermined area (deflection area M).

  The first and second vapor deposition sources 30a and 30b are arranged on a straight line intersecting the first and second magnetic force lines Ma and Mb, and are arranged on one side and the other side with the deflection region M in between. Yes.

  The first and second vapor deposition sources 30a and 30b have cylindrical anode electrodes 31a and 31b. One end of each of the anode electrodes 31a and 31b is directed to the deflection region M, and an opening 36a at one end thereof, 36b faces each other with the deflection region M in between.

  Electrons and ions of charged particles generated inside the anode electrodes 31a and 31b are emitted from the openings 36a and 36b directed to the deflection region M, respectively. Incident from different directions.

  As will be described later, the charged particles are emitted in a direction parallel to the central axis of the anode electrodes 31a and 31b. Here, the anode electrodes 31a and 31b are arranged so that the central axes are located on the same straight line. The discharge direction of the charged particles from the vapor deposition source 30a and the discharge direction of the charged particles from the second vapor deposition source 30b are parallel to each other and opposite to each other.

  Reference numerals Fa and Fb in FIG. 1 are axes passing through the centers of the bundle of charged particles emitted from the first and second vapor deposition sources 30a and 30b, and are emitted when the charged particles are emitted from the openings 36a and 36b. The first and second emission axes parallel to the direction extension are shown.

  The magnetic field forming device 5 forms a first magnetic line group Ma when discharging charged particles from the first vapor deposition source 30a, and forms a second magnetic line group Mb when discharging charged particles from the second vapor deposition source 30b. To do.

  As described above, the first and second discharge axes Fa and Fb are parallel to each other and in opposite directions, and the directions of the first and second magnetic force lines Ma and Mb are also parallel to each other, and Because of the reverse direction, the incident angle when the charged particles emitted from the first vapor deposition source 30a enter the first magnetic field line group Ma and the charged particles from the second vapor deposition source 30b are the second magnetic field line group. Incident angles when entering Mb are substantially equal.

  The charged particles emitted from the first and second vapor deposition sources 30a and 30b include positive charged particles (for example, ions) and negative charged particles (for example, electrons). According to Fleming's left-hand rule, when positively charged particles are emitted in directions Fa and Fb, the direction indicated by the middle finger, and the direction of magnetic field lines Ma and Mb on which the charged particles are incident are indicated by the index finger, The direction of the applied Lorentz force is the same as when it enters the first magnetic field line group Ma from the first vapor deposition source 30a and when it enters the second magnetic field line group Mb from the second vapor deposition source 30b.

  Electrons that are negatively charged particles are subjected to a force that bends in the direction opposite to the Lorentz force applied to the positively charged particles. Therefore, electrons emitted from the first vapor deposition source 30a are also emitted from the second vapor deposition source 30b. The emitted electrons also bend in the same direction.

  When the substrate holder 7 is arranged ahead of the direction in which electrons are bent, an electron cloud is formed in the vicinity of the substrate holder 7. Reference numeral 45 in FIG. 2 indicates a minute charged particle having a large charge mass ratio (charge / mass) among positively charged particles, and the minute charged particle 45 is greatly influenced by a difference between the Coulomb force and the Lorentz force.

  When discharging charged particles from the first vapor deposition source 30a and when discharging charged particles 30b from the second vapor deposition source 30b, the electron cloud grows until the Coulomb force becomes larger than the Lorentz force. If the discharge of the charged particles is continued, the flight direction of the minute charged particles 45 is bent toward the substrate holder 7 side.

The giant particles 46 having a small charge-mass ratio are less affected by the Coulomb force and the Lorentz force, and the flight direction of the giant particles 46 is not bent. The holder 7 is not reached.
Therefore, only the minute charged particles 45 reach the substrate 11 held by the substrate holder 7 from the first and second vapor deposition sources 30a and 30b, and a thin film with good film quality is formed.

If charged particles of different types of vapor deposition materials are emitted from the first and second vapor deposition sources 30, different types of thin films are stacked on the same substrate 11. For example, magnetic devices such as Co.FeNi / Ta / Py / Ir.Mn and nonmagnetic materials can be laminated with a thin film having a thickness of nm unit to manufacture a magnetic device, particularly an MRAM.
Further, if charged particles of the same kind of vapor deposition material are emitted from the first and second vapor deposition sources 30, one kind of thin film can be grown on the same substrate 11.

  Next, the specific configuration of the magnetic field forming device 5 will be described as the following specific examples 1 to 4. The film forming devices 1a to 1d of the examples 1 to 4 are different from each other in the magnetic field forming devices 5a to 5d. Otherwise, it has the same structure as the above-described comprehensive embodiment.

  First, the film forming apparatus 1a of Example 1 will be described. The magnetic field forming apparatus 5a of the film forming apparatus 1a includes first and second magnet members 52a and 52b and a reversing device 50 (see FIG. 3).

  The reversing device 50 has first and second rotating shafts 51 a and 51 b erected outside the vacuum chamber 2, and the first and second discharge axes Fa and Fb inside the vacuum chamber 2 pass through. Assuming that the space is the discharge space, the first and second rotating shafts 51a and 51b are located on one side and the other side of the discharge space, respectively.

  The first and second magnet members 52a and 52b are plate-like permanent magnets, and one ends thereof are connected to the first and second rotating shafts 51a and 51b, respectively. Accordingly, the first and second magnet members 52a and 52b are located outside the vacuum chamber 2 and on one side and the other side of the discharge space, respectively.

  The first and second rotating shafts 51a and 51b are connected to a motor (not shown), and when the power of the motor is transmitted to the first and second rotating shafts 51a and 51b, the first and second rotating shafts. The central axes 51a and 51b are configured to rotate with the central axis as a rotation axis while the central axis is stationary with respect to the vacuum chamber 2.

  Reference numerals 59a and 59b in FIG. 3 indicate the rotation axes of the first and second rotation shafts 51a and 51b, respectively, and when the first and second rotation shafts 51a and 51b rotate, the first and second magnets are rotated. The members 52a and 52b also rotate about the rotation axes 59a and 59b, and the directions of the front and back surfaces of the first and second magnet members 52a and 52b change.

  For example, the first and second magnet members 52a and 52b are arranged in a direction in which the surfaces are separated from the discharge space from the place where the surfaces of the first and second magnet members 52a and 52b are arranged in parallel with each other toward the discharge space. When the magnet members 52a and 52b are rotated by 180 °, the first and second magnet members 52a and 52b move to the second position B where the back surfaces are arranged in parallel with each other toward the discharge space.

  The first and second rotating shafts 51a and 51b are configured to be able to reverse the rotation direction. When the first and second magnet members 52a and 52b are rotated 180 ° in the reverse direction, the first and second rotating shafts 51a and 51b The magnet members 52a and 52b return from the second position B to the first position A, and their surfaces are directed to the discharge space.

  Here, the reversing device 50 has a stopper (not shown), and when the first and second magnet members 52a and 52b rotate in the forward direction, the back surface contacts the stopper at the second position B and stops. When rotating in the opposite direction, the surface comes into contact with the stopper at the first position A and stops. Accordingly, the first and second magnet members 52 a and 52 b move between the first and second positions A and B without contacting the vacuum chamber 2.

  The second magnet members 52a and 52b are formed with magnetic poles having different polarities on the front surface and the back surface. When the S pole is formed on the front surface of the first magnet member 52a and the N pole is formed on the back surface, the second magnet member 52a, 52b When the N pole is formed on the surface of the member 52b, the S pole is formed on the back surface, the N pole is formed on the surface of the first magnet member 52a, and the S pole is formed on the back surface, the S pole is formed on the surface of the second magnet member 52b. An N pole is formed on the back surface.

  Therefore, when the first and second magnet members 52a and 52b are at the first position A, the surfaces on which the different magnetic poles are formed face each other, and the magnetic field lines are formed between the surfaces as the deflection region M. When they are at the second position B, the back surfaces on which different magnetic poles are formed face each other, and a magnetic field line is formed between the back surfaces as a deflection region M.

  As described above, the first and second magnet members 52a and 52b are located outside the vacuum chamber 2, but here the vacuum chamber 2 is made of a magnetically permeable material, and the magnetic field lines formed are It passes through the wall of the vacuum chamber 2 and passes through the inside of the vacuum chamber 2.

When the first and second magnet members 52a and 52b move between the first and second positions A and B, the surface on the vacuum chamber 2 side is changed from the front surface to the back surface. The magnetic poles on the surface of this are reversed. Therefore, the directions of the first and second magnetic force lines Ma and Mb are opposite to each other.
The shape and size of the first and second magnet members 52a and 52b and the arrangement at the first and second positions A and B are set so that the first and second magnetic force lines Ma and Mb are parallel to each other. Has been.

  For example, the first and second magnet members 52a and 52b have the same shape and the same size, and at the first position A, the surfaces face each other, and a first magnetic field line group Ma perpendicular to the surfaces is formed. In the second position B, the back surfaces face each other, and a second magnetic field line group Mb perpendicular to the back surface is formed.

  The movement between the first and second positions A and B includes a plane when the first and second magnet members 52a and 52b are rotated 180 ° and the front surface is at the first position A, and the back surface thereof. Since the planes at the second position B are the same, the first and second magnetic force lines Ma and Mb are parallel to each other.

  As described above, since the first and second vapor deposition sources 30a and 30b are parallel to each other and emit charged particles in opposite directions, the first and second vapor deposition sources 30a and 30b The incident angles when charged particles are incident on the first and second magnetic field lines Ma and Mb are equal.

  The above describes the case where one end of the first and second magnet members 52a, 52b is connected to the first and second rotating shafts 51a, 51b, but the present invention is not limited to this, It is also possible to insert the first and second rotating shafts 51a and 51b through the first and second magnet members 52a and 52b.

  When the first and second rotating shafts 51a and 51b are inserted through the first and second magnet members 52a and 52b, the first and second magnet members 52a and 52b are moved to the first and second positions A, respectively. , B, since one end of the first and second magnet members 52a, 52b rotates so as to approach the vacuum chamber 2, the first and second rotary shafts 51a, 51b and the vacuum chamber 2 It is necessary to increase the distance between the two.

  In the film forming apparatus 1a of the first embodiment described above and the film forming apparatus 1b of the second embodiment to be described later, the first and second magnet members 52a and 52b and the reversing device 50 may be arranged inside the vacuum chamber 2. However, the arrangement of these members outside the vacuum chamber 2 simplifies the structure of the apparatus and facilitates maintenance.

  The rotation angle when the first and second magnet members 52a and 52b are moved between the first and second positions A and B is not limited to 180 °, and the first and second are parallel and opposite to each other. If the magnetic field lines Ma and Mb are formed, the rotation angle may be less than 180 ° or may exceed 180 °.

  Next, the film forming apparatus 1b of Example 2 shown in FIG. 4 will be described. The magnetic field forming device 5b of the film forming apparatus 1b includes first and second magnet members 62a and 62b made of electromagnets, and a reversing device 60 made of a power supply device. The two magnet members 62a and 62b are respectively connected to the reversing device 60, and when current is supplied from the reversing device 60 to the coils of the first and second magnet members 62a and 62b, the first and second magnet members 62a. 62b are magnetized.

  The first and second magnet members 62a and 62b are disposed outside the vacuum chamber 2 and on one side and the other side of the discharge space from which charged particles are discharged, respectively. The surfaces of the first and second magnet members 62a and 62b on the side where the magnetic poles are formed are directed to the discharge space, and the direction of the current supplied by the reversing device 60 is the surface of the first magnet member 62a on the discharge space side. In addition, magnetic poles having different polarities are formed on the surface of the second magnet member 62b on the discharge space side.

  Therefore, in this film forming apparatus 1b, the space between the surface on the discharge space side of the first magnet member 62a and the surface on the discharge space side of the second magnet member 62b becomes the deflection region M, and the vacuum chamber 2 is made of a magnetically permeable material. When configured, the magnetic field lines in the deflection region M pass through the vacuum chamber 2.

  Here, the first and second magnet members 62a and 62b are such that the central axis of the coil is positioned on the same axis, and the center of the magnetic field lines formed inside the first and second magnet members 62a and 62b. Since the axes are also located on the same axis, the lines of magnetic force formed in the deflection region M are linear along the same axis.

  The reversing device 60 is capable of reversing the direction of the current supplied to the first and second magnet members 62a and 62b, and discharges when a reverse current is passed through the first and second magnet members 62a and 62b. The polarity of the magnetic poles on the space side surface is reversed.

  When the polarities of both the magnetic poles on the surface of the first magnet member 62a on the emission space side and the magnetic poles on the surface of the emission space of the second magnet member 62b are reversed, the magnetic field lines disappear and reverse to the same place. Magnetic field lines are formed.

  Since the magnetic field forming device 5b reverses only the polarity of the magnetic poles with the first and second magnet members 62a and 62b relatively stationary, the first and second magnet members 62a and 62b are parallel to each other at the same place and in the opposite directions. First and second magnetic field lines are formed.

Next, the film forming apparatus 1c of Example 3 shown in FIG. 5 will be described. The magnetic field forming device 5c of the film forming apparatus 1c has a power source 80 disposed outside the vacuum chamber 2 and four unit electromagnets 81a to 81d disposed outside the vacuum chamber 2 and connected to the power source 80, respectively. is doing.
Four unit electromagnets 81a to 81d are formed as a set, and two unit electromagnets 81a to 81d of each set are located on one side and the other side of the discharge space, respectively.

  The unit electromagnets 81a to 81d have coils (not shown), and when the coil of the unit electromagnets 81a to 81d is energized from the power supply 80, the unit electromagnets 81a to 81d are magnetized, and the unit electromagnets 81a to 81d have an S pole and N. Two magnetic poles are formed. In the unit electromagnets 81a to 81d, one magnetic pole is directed to the emission space, and the other magnetic pole is directed to the side opposite to the emission space.

  The power supply 80 is opposite to the discharge space side surface of one of the unit electromagnets 81a and 81c and the discharge space side surface of the other unit electromagnets 81b and 81d of the two unit electromagnets 81a to 81d of each set. When a current is supplied so as to form a magnetic pole of the polarity and the vacuum chamber 2 is made of a magnetically permeable material, one unit electromagnet 81a, 81c of the two unit electromagnets 81a-81d of each set. The first and second magnetic field lines Ma and Mb passing through the discharge space are formed between the other unit electromagnets 81b and 81d.

  Of the two unit electromagnets 81a to 81d in each group, one unit electromagnet 81a, 81c is arranged on one side of the emission space, and the other unit electromagnet 81b, 81d is arranged on the other side of the emission space. Two unit electromagnets 81a to 81d are arranged on one side and the other side of the discharge space, respectively.

  The power supply 80 is set so as to supply the two unit electromagnets 81a to 81d on the same side of the emission space with currents that form magnetic poles of different polarities on the surface of the emission space. The directions of the second magnetic field lines Ma and Mb are reversed.

  The two unit electromagnets 81a to 81d of each set are arranged so that the central axis of the coil, that is, the central axis of the magnetic force lines formed inside the unit electromagnets 81a to 81d is located on the same axis. The first and second magnetic force lines Ma and Mb are linear along the axis.

  The two unit electromagnets 81a and 81b in one set and the two unit electromagnets 81c and 81d in the other set are arranged so that the central axes of the magnetic lines of force formed therein are parallel to each other. The directions of the first and second magnetic force lines Ma and Mb are parallel.

  As described above, since the two unit electromagnets 81a to 81d on the same side of the emission space are formed with magnetic poles having different polarities on the surface of the emission space, the two unit electromagnets 81a to 81d are simultaneously provided with the two unit electromagnets 81a to 81d. When energized, a group of lines of magnetic force that do not pass through the discharge space is formed between the two unit electromagnets 81a to 81d.

  Here, the power source 80 includes a switch 89, and when the switch 89 is switched to supply current to the two unit electromagnets 81a and 81b in one set, the other unit electromagnet 81c in the other set. , 81d so that no current is supplied.

  Accordingly, only one of the first magnetic field line group Ma and the second magnetic field line group Mb is formed, and no magnetic field line group is formed between the two unit electromagnets 81a to 81d on the same side of the emission space.

  The case where the unit electromagnets 81a to 81d are arranged outside the vacuum chamber 2 has been described above. However, the present invention is not limited to this, and any one or all of the unit electromagnets 81a to 81d are disposed in the vacuum chamber 2. Although the unit electromagnets 81 a to 81 d may be arranged outside the vacuum chamber 2, the structure and maintenance of the apparatus are simplified.

  Next, the film forming apparatus 1d of Example 4 shown in FIG. 6 will be described. The film forming apparatus 1d includes first and second magnet members 72a and 72b and a reversing device, and the reversing device includes a magnetizing unit 72c.

  The magnetizing means 72c has an elongated plate-like yoke 73 and a magnet 74 attached to the central portion in the longitudinal direction of the yoke 73. The yoke 73 is magnetized by the magnet 74, and one end portion in the longitudinal direction and the other. Magnetic poles having opposite polarities are formed at the ends.

  The reversing device has a rotating mechanism (not shown) in addition to the magnetizing means 72c. The rotating mechanism moves the magnetizing means 72c around a rotation axis 79 perpendicular to the surface of the yoke 73 and passing through the center of the surface. It is configured to be rotatable in a horizontal plane. As described above, since the two magnetic poles of the N pole and the S pole are formed at one end and the other end of the yoke 73, the rotation axis 79 passes between the two magnetic poles, and the magnetizing means 72c rotates 180 °. When the one end and the other end in the longitudinal direction are exchanged, the positions of the two magnetic poles are exchanged.

  The first and second magnet members 72 a and 72 b are plate-like, and are arranged so that the surfaces face each other across the extension line of the rotation axis 79 in a state where the surface is parallel to the extension line of the rotation axis 79. Has been.

  The reversing device has a moving mechanism (not shown) that moves the magnetizing means 72 c along the extension line of the rotation axis 79. The distance between the first and second magnet members 72a and 72b is shorter than the length of the yoke 73 of the magnetizing means 72c, and the magnetizing means 72c is moved along the rotation axis 79 along the first and second magnets. When moved in a direction approaching the members 72a and 72b, one end contacts the first magnet member 72a and the other end contacts the second magnet member 72b.

  As described above, since the magnetic poles having different polarities are formed by the magnet 74 at one end and the other end of the yoke 73, the first and second magnet members 72a and 72b are in contact with the magnetic poles having different polarities. .

  The first and second magnet members 72a and 72b are made of a magnetized material such as a yoke, and are not magnetized in a non-contact state with the magnetic pole, but are magnetized when in contact with the magnetic pole and are the same as the contacted magnetic pole Become polar.

  Accordingly, the first and second magnet members 72a and 72b are magnetized to have different polarities, and the space between the opposing surfaces of the first and second magnet members 72a and 72b becomes a deflection space, A first magnetic field line group Ma is formed.

  Next, when the magnetizing means 72c is moved in the direction away from the first and second magnet members 72a and 72b along the rotation axis 79, the magnetizing means 72c is separated from the first and second magnet members 72a and 72b. The magnetic poles of the first and second magnet members 72a and 72b disappear and the first magnetic field line group Ma disappears.

  After the magnetizing means 72c is separated from the first and second magnet members 72a and 72b, the magnetizing means 72c is rotated as described above to change the position of the magnetic pole, and then the magnetizing means 72c is changed to the first and second magnet members 72c and 72b. When moved in the direction approaching the magnet members 72a and 72b, the first and second magnet members 72a and 72b are respectively contacted with magnetic poles having opposite polarities to those when the first magnetic field lines Ma are formed. Between the second magnet members 72a and 72b, a second magnetic field line group Mb opposite to the first magnetic field line group Ma is formed.

  The first and second magnet members 72a and 72b are relatively stationary, and only the polarities of the magnetic poles formed on the first and second magnet members 72a and 72b are reversed. The magnetic field lines Ma and Mb are formed at the same place, and their directions are parallel to each other and opposite to each other.

  The first and second vapor deposition sources 30a and 30b are arranged on the one side and the other side of the deflection region where the first and second magnetic force lines Ma and Mb are formed. When the charged particles from the first and second vapor deposition sources 30a and 30b are incident on the first and second magnetic force line groups Ma and Mb, respectively. Are substantially equal.

  In the film forming apparatus 1d of the fourth embodiment, the first and second magnet members 72a and 72b and the magnetizing unit 72c may be provided inside the vacuum chamber 2 or outside the vacuum chamber 2, respectively. Although the first and second magnet members 72a and 72b and the magnetizing means 72c are provided outside the vacuum chamber 2, the structure and maintenance of the apparatus are simplified. When the first and second magnet members 72a and 72b and the magnetizing means 72c are provided outside the vacuum chamber 2, if the vacuum chamber 2 is made of a magnetically permeable material, the first and second magnetic field lines Ma and Mb Passes through the vacuum chamber 2.

  The first and second magnet members 72a and 72b and the magnetizing means 72c are moved while the first and second magnet members 72a and 72b are relatively stationary. If the magnetizing means 72c moves relative to 72b, the first and second magnet members 72a and 72b may be moved while the magnetizing means 72c is stationary. The second magnet members 72a and 72b and the magnetizing means 72c may all be moved.

Next, a film forming apparatus of Example 5 which is an example different from the above comprehensive example will be described.
Reference numeral 76 in FIG. 7 has the film forming apparatus of the fifth embodiment. The film forming apparatus 76 includes a vacuum chamber (not shown), four vapor deposition sources 30a to 30d, and a magnetic field forming apparatus 77.

  Each of the vapor deposition sources 30a to 30d has the same structure as the first and second vapor deposition sources 30a and 30b in the above-described comprehensive example, and the four anode electrodes 31a to 31d of the vapor deposition sources 30a to 30d have one end. Each part is inserted in an airtight manner inside the vacuum chamber. Accordingly, the openings 36 a to 36 d at one end portions of the anode electrodes 31 a to 31 d are located inside the vacuum chamber 2.

  The two evaporation sources 30a to 30d form a set. The two evaporation sources 30a to 30d in each set have anode electrodes 31a and 31b whose central axes are located on the same straight line, and the openings 36a to 36d are mutually connected. It is made to oppose. Accordingly, charged particles are emitted from the two vapor deposition sources 30a to 30d in each set toward the inside of the vacuum chamber 2 from opposite directions.

The two evaporation sources 30a and 30b in one set and the two evaporation sources 30c and 30d in the other set are straight lines (first and second straight lines 91 and 92) on which the central axes of the anode electrodes 31a to 31d are located. Are positioned so as to cross each other substantially perpendicularly in the same plane.
Accordingly, the line segment connecting the two vapor deposition sources 30a and 30b in one set and the line segment connecting the two vapor deposition sources 30c and 30d in the other set intersect substantially perpendicularly.

  As described above, since the central axes of the anode electrodes 31a to 31d coincide with the emission direction of the charged particles, the flight direction of the charged particles emitted from the two vapor deposition sources 30a and 30b in one set is the same as that in the other set. It intersects with the emission direction of the charged particles emitted from the two vapor deposition sources 30c and 30d substantially perpendicularly.

  The anode electrodes 31a to 31d are inserted into the vacuum chamber so that the distances from the centers of the openings 36a to 36d to the intersections of the first and second straight lines 91 and 92 are equal to each other. Arranged at equal intervals on the circumference centered at the intersection of the first and second straight lines 91 and 92, charged particles are emitted from the openings 36a to 36d toward the center C, respectively.

The magnetic field forming device 77 has four yokes 75a to 75d (first to fourth magnet members) and the same magnetizing means 72c as the film forming device 1d of the fourth embodiment.
Each yoke 75a-75d is plate-shaped, and is attached to one yoke 75a-75d so that one anode electrode 31a-31d is inserted from the back surface to the surface at a position outside the vacuum chamber 2 (FIG. 8 (a)).

  Therefore, two yokes 75a to 75d are formed as a set, on an extension line of a line connecting one set of vapor deposition sources 30a and 30b and on an extension line of a line connecting the other set of vapor deposition sources 30c and 30d. Each is arranged.

Since the yokes 75a to 75d are outside the vacuum chamber 2 and the openings 36a to 36d are arranged inside the vacuum chamber 2, the yokes 75a to 75d are radially open from the center C of the circumference to the outside 36a. The yokes 75a to 75d do not block charged particles emitted from the openings 36a to 36d, and the charged particles fly toward the center C.
The magnetizing means 72c is arranged so that the extension line of the rotation axis 79 described above penetrates the center C in a direction substantially perpendicular to the circumference where the vapor deposition sources 30a to 30d are arranged.

  The magnetizing means 72c is connected to the same moving mechanism and rotating mechanism as the film forming apparatus 1d of the fourth embodiment, and when rotated around the rotation axis 79, the two magnetic poles of the magnetizing means 72c are centered on the rotation axis 79. When the magnetizing means 72c is moved in one direction along the rotation axis 79, it approaches the circumference where the vapor deposition sources 30a to 30d are arranged, and the magnetizing means 72c is reversed along the rotation axis 79. When it is moved in the direction, it moves away from the circumference where the vapor deposition sources 30a to 30d are arranged.

  Similarly to the distance between the first and second magnet members 72a and 72d, the distance between the two yokes 75a to 75d in each group can be in contact with the magnetic poles having different polarities of the magnetizing means 72c. When the two yokes 75a to 75d of each set come into contact with the magnetic poles having different polarities of the magnetizing means 72c, the yokes 75a to 75d are magnetized to different polarities, and the vacuum chamber 2 is made of a magnetically permeable material. If there is, a group of magnetic force lines is formed inside the vacuum chamber 2.

  As described above, the anode electrodes 31a to 31d are inserted into the yokes 75a to 75d, and the openings 36a to 36d are protruded from the surfaces of the yokes 75a to 75d. Therefore, the shape of the magnetic field lines is the openings 36a to 36d. It becomes a cylinder shape surrounding the space between the openings 36a to 36d facing the openings 36a to 36d.

  The size of the magnetizing means 72c is such that when it comes into contact with the two yokes 75a and 75b in one set, it does not come into contact with the two yokes 75c and 75d in the other set. Magnetic field lines are formed only between the two yokes 75a to 75d.

  The magnetizing means 72c is moved in the opposite direction along the rotation axis 79, and the positions of the magnetic poles of the magnetizing means 72c are switched as described above in a state where the two yokes 75a to 75d of each set are separated from the magnetizing means 72c. Then, magnetic field lines are formed in the direction opposite to that before the position of the magnetic pole is changed.

FIG. 8B shows a state in which the two magnetic poles of the magnetizing means 72c are in contact with the two yokes 75a and 75b of one set.
Since the two yokes 75a and 75b in one set and the two yokes 75c and 75d in the other set are respectively positioned on the line segments orthogonal to each other as described above, the first and second When the magnetizing means 72c is separated from the magnet members 72a and 72b, the magnetizing means 72c is rotated by 90 °, and the magnetizing means 72c is moved in one direction along the rotation axis 79, the magnetizing means 72c has different polarities. The magnetic poles are in contact with the other two yokes 75c and 75d, and different magnetic poles are formed on the two yokes 75c and 75d, respectively.

  Accordingly, since the magnetic field forming device 77 forms the magnetic field lines in the opposite directions between the two yokes 75a to 75d of each group, it is possible to form four types of magnetic field lines after all.

  Here, the two yokes 75a to 75d in each set face each other with their surfaces parallel to each other, and a group of magnetic force lines perpendicular to the surface is formed between the two yokes 75a to 75d. .

  The yokes 75a to 75d are arranged so that the surfaces thereof are perpendicular to the central axes of the anode electrodes 31a to 31d inserted through the yokes 75a to 75d, and therefore, between the two yokes 75a to 75d of each set. The magnetic lines of force formed in parallel to the central axes of the anode electrodes 31a to 31d inserted through the yokes 75a to 75d.

  As described above, since the emission direction of the charged particles from the openings 36a to 36d coincides with the central axis of the anode electrodes 31a to 31d, the charged particles emitted from one of the two vapor deposition sources 30a to 30d are the other. It enters substantially perpendicularly to the magnetic field lines formed by the yokes 75a to 75d to which the two vapor deposition sources 30a to 30d are attached.

  In the case where one of the four vapor deposition sources 30a to 30d is selected to emit charged particles one by one, the charged particles are a group of lines of magnetic force on which the charged particles are incident substantially vertically, and each of the vapor deposition sources 30a to 30d When a group of lines of magnetic force in which charged particles of the same charge are bent in the same direction by Lorentz force is generated, the positive minute charged particles 45 always fly in the same direction as in the film forming apparatus 1 shown in FIG. Is bent.

  If the substrate holder 7 is arranged ahead of the bent flight direction, minute charged particles emitted from the four vapor deposition sources 30a to 30d sequentially reach the surface of the substrate 11, and the four vapor deposition sources 30a to 30a. When 30d emits charged particles of different vapor deposition materials, four types of films are stacked on the surface of the substrate 11, and when the four vapor deposition sources 30a to 30b emit charged particles of the same vapor deposition material, the substrate 11 One type of film is formed on the surface.

  The yokes 75a to 75d and the magnetizing means 72c may be disposed inside the vacuum chamber 2, but the structure and maintenance of the film forming apparatus 1 are easier if they are disposed outside the vacuum chamber 2.

  Further, the number of yokes 75a to 75d and the vapor deposition sources 30a to 30d are not particularly limited. If the charged particles having the same charge can be bent in the same direction, the four yokes 75a to 75d and the four vapor deposition sources 30a. In addition to ˜30d, one set of two or more yokes and one set of two evaporation sources may be provided.

  The above describes the case where the anode electrodes 31a to 31d are inserted through the yokes 75a to 75d. However, the yokes 75a to 75d are positions where the charged particles emitted from the openings 36a to 36d are not blocked, and the yoke 75a. The arrangement is not particularly limited as long as it forms magnetic lines of force on which charged particles can be incident from two vapor deposition sources 30a to 30d of a set different from the vapor deposition sources 30a to 30d to which ~ 75d is attached. .

  Specifically, the yokes 75a to 75d may be arranged one by one on the sides of the vapor deposition sources 30a to 30d, or a plurality of yokes may be arranged on the sides of the vapor deposition sources 30a to 30d to form one vapor deposition source. You may comprise one magnet member with the some yoke arrange | positioned in the vicinity of 30a-30d.

  The magnetizing means 72c used in the fourth and fifth embodiments is not limited to the combination of the yoke 73 and the permanent magnet 74 described above. For example, the magnetizing means made of an electromagnet is used and the direction of the current flowing through the electromagnet is changed. You may replace the position of a magnetic pole.

  An example of the substrate holder 7 used in the film forming apparatus 1 of the present invention will be described in detail. A shaft-like rotational force transmission means 20 is inserted into the ceiling of the vacuum chamber 2 in an airtight manner, and the rotational force transmission means. 20 has an outer shaft 23 and an inner shaft 22 inserted through the outer shaft 23. The substrate holder 7 has a disk shape, and is connected to the outer shaft 23 in a state of being horizontal in the vacuum chamber 2 (FIG. 9).

  The substrate holder 7 is provided with a plurality of attachment portions 8 at positions separated from the center position in the radial direction of the disk by a predetermined distance, and each attachment portion 8 makes the substrate as the film formation target 11 substantially horizontal. Configured to hold. FIG. 9 shows a state in which the substrate 11 is held on each mounting portion 8.

  The outer shaft 23 and the inner shaft 22 are connected to power means 26 and 27 outside the vacuum chamber 2, respectively. The power of the power means 27 is transmitted to the substrate holder 7 by the outer shaft 23, and the substrate holder 7 rotates in the horizontal plane with the center of the disk as the rotation center C1.

  The mounting portion 8 is configured such that the power of the power means 26 is transmitted by the inner shaft 22, and when the power is transmitted to the mounting portion 8, the substrate 11 is centered on the rotation center C <b> 1 of the substrate holder 7. The center C2 of the substrate 11 and the rotation center C1 of the substrate holder 7 are relatively stationary while moving along the circumference, and the center C2 is configured to rotate in the horizontal plane with the center C2 as the rotation center. Yes.

  The positional relationship between the substrate holder 7 and the magnetic field forming devices 5a to 5f is such that the minute charged particles 45 whose flight direction is bent reach a part of the circumference (film formation region 6) in which the substrate 11 moves. The minute charged particles 45 whose flight direction is bent are incident on the surface of the substrate 11 passing through the film formation region 6 and a thin film grows.

  Since the substrate 11 passes through the film formation region 6 while rotating as its center C2, the amount of the minute charged particles 45 reaching each part of the surface of the substrate 11 is made uniform, and a thin film having a uniform film thickness is formed on the surface of the substrate 11. It is formed.

  Next, an example of the vapor deposition sources 30a to 30d used in the present invention will be described. Each vapor deposition source 30a to 30d has the same structure except that the emission direction of charged particles is different, and one vapor deposition source (first The vapor deposition source 30 a has a cylindrical anode electrode 31.

  One end of the anode electrode 31 is inserted into the vacuum chamber 2 in an airtight manner. Reference numeral 36 in FIG. 9 denotes an opening disposed inside the vacuum chamber 2 among the openings of the cylinder of the anode electrode 31. When particles are generated inside the anode electrode 31 as described later, the particles are released from the opening 36. It is discharged into the vacuum chamber 2.

  The vapor deposition source 30 a has a discharge part 35 in addition to the anode electrode 31. The discharge part 35 is rod-shaped and is disposed inside the anode electrode 31 with the tip directed toward the opening 36. The discharge part 35 has a vapor deposition material 34 and a trigger electrode 32, the vapor deposition material 34 is disposed at the tip of the discharge part 35, and the trigger electrode 32 is disposed closer to the bottom wall side of the anode electrode 31 than the vapor deposition material 34. Yes.

  Here, the vapor deposition material 34 has a columnar shape smaller in diameter than the inner diameter of the anode electrode 31, and its central axis coincides with the central axis of the anode electrode 31. There is a gap between the walls.

A power supply device 41 is disposed outside the vacuum chamber 2. Here, the power supply device 41 includes a trigger power supply 42, an arc power supply 43, and a capacitor unit 44. When the arc power supply 43 is operated, the capacitor unit 44 is charged.
The trigger power source 42 is configured to apply a voltage between the trigger electrode 32 and the vapor deposition material 34.

  An insulator 33 is disposed between the trigger electrode 32 and the vapor deposition material 34, and the vacuum exhaust system 9 connected to the vacuum chamber 2 is operated to form a vacuum atmosphere inside the vacuum chamber 2. When a voltage is applied between the trigger electrode 32 and the vapor deposition material 34 with the vacuum chamber 2 placed at the ground potential, creeping discharge is generated on the side surface of the insulator 33, and from the boundary between the vapor deposition material 34 and the insulator 33. Electrons are emitted (trigger discharge).

The capacitor unit 44 is connected to the vapor deposition material 34, and when trigger discharge occurs, the insulation resistance of the gap between the anode electrode 31 and the vapor deposition material 34 decreases, and the capacitor unit 44 discharges (arc discharge). A large amount of current (1400 A to 2000 A, arc current) flows from 31 to the vapor deposition material 34.
When an arc current flows through the vapor deposition material 34, the above-described minute charged particles 45 and electrons are emitted from the vapor deposition material 34.

  The vapor deposition material 34 is arranged such that when the shape is columnar, the center axis thereof coincides with the center axis of the anode electrode 31, and when the shape is ring-shaped, the center axis of the anode electrode 31 passes through the center of the ring. Since the vapor deposition material 34 is uniformly arranged around the central axis of the anode electrode 31, the minute charged particles 45 and electrons are generated in a range centered on the central axis of the anode electrode 31.

  The electrons emitted from the vapor deposition material 34 are directed toward the inner wall surface of the anode electrode 31 immediately after being emitted from the vapor deposition material 34, but the flight direction is bent toward the opening 36 by the magnetic field formed by the flight of itself. The minute charged particles 45 are attracted by electrons and the flight direction thereof is bent in the same direction as the electrons, and emitted from the opening 36 in a direction perpendicular to the plane constituting the opening 36.

Since the central axis of the anode electrode 31 intersects with the plane constituting the opening 36 perpendicularly, the central axis is parallel to the emission direction of the electrons and the minute charged particles 45.
Since charged particles are generated in a range centered on the central axis of the anode electrode 31, the center of the minute charged particles 45 and the electron bundle emitted from the opening 36 coincides with the central axis of the anode electrode 31. Accordingly, the first and second emission axes Fa and Fb described above coincide with the central axis of the anode electrode 31.

  When an arc current flows through the vapor deposition material 34, the vapor deposition material 34 is heated to a high temperature, and when a part thereof is melted, a droplet having a diameter of about 50 μm to 100 μm is scattered from the melted portion. When it collides with the inner wall surface of the electrode 31, it becomes a micro droplet having a diameter of about 1 to 5 μm.

  Since the large particle 46 such as a micro droplet or a droplet has a small charge-mass ratio, even if it is emitted from the opening 36, it does not fly in the direction in which the substrate holder 7 is located and is not mixed into the thin film as described above. .

  In the present invention, the giant particle 46 is a particle having a diameter of 1 μm or more, and the minute charged particle 45 is a cluster particle in which 1000 to 2000 atoms are gathered, or an atomic particle having a mass smaller than that of the cluster particle. The diameter is less than 1 μm.

  The shape and material of the members constituting the vapor deposition source 30 are not particularly limited. For example, a columnar vapor deposition material 34 having a diameter of 10 mm, a disk-shaped insulator 33, a cylindrical trigger electrode 32, and the like. , The discharge part 35 attached in close contact with a screw (not shown) is disposed in the anode electrode 31 having an inner diameter (diameter of the opening 36) of 30 mm, and the insulator 33 is made of alumina, for example. The material of the trigger electrode 32 and the anode electrode 31 is stainless steel, for example.

  The arrangement of the vapor deposition source 30 is not particularly limited. For example, the height from the central axis of the anode electrode 31 to the surface of the substrate 11 is 100 mm, and the distance from the center C2 of the substrate 11 to the plane on which the opening 36 is located is 50 mm. It is.

  Further, the power supply device 41 shown in FIG. 9 will be described in detail. The capacitor unit 44 uses four capacitors each having a capacitance of 2200 μF (withstand voltage: 160 V) connected in parallel. It is possible to use a transformer which outputs a 3.4 kV (several μA) polarity: plus by transforming a pulse voltage of μs of 200 V input by about 17 times.

  The arc power supply 43 is a direct current power supply having a capacity of, for example, 100 V and several A, and charges the capacitor unit 44 with a charge of 100 V before trigger discharge occurs. Since it takes about 1 second to charge the capacitor unit 44, in this power supply device 41, the cycle when discharging is repeated at 8800 μF is performed at 1 Hz.

  The positive output terminal of the trigger power source 42 is connected to the trigger electrode 32, the negative terminal is connected to the same potential as the negative side output terminal of the arc power source 43, and the vapor deposition material 34 is connected. The plus terminal of the arc power supply 43 is grounded to the ground potential and connected to the anode electrode 31. Both terminals of the capacitor unit 44 are connected between the positive and negative terminals of the arc power supply 43.

The evacuation system 9 is not particularly limited. For example, the evacuation system 9 includes a turbo molecular pump, a valve, and a rotary pump. The turbo molecular pump to the rotary pump are connected by a metal vacuum pipe, and the inside of the vacuum chamber 2 can be evacuated. Things are used. Further, the pressure inside the vacuum chamber 2 at the time of film formation is, for example, 10 ⁻⁵ Pa or less.

  If a film is formed while a gas supply system is connected to the vacuum chamber 2 and a reaction gas that reacts with the minute charged particles 45 is supplied from the gas supply system, a thin film made of a reaction product of the minute charged particles 45 and the reaction gas is formed. can do.

As a method for emitting charged particles from only one of the plurality of vapor deposition sources 30a to 30d described above, for example, there is a method in which only selected vapor deposition sources are energized to cause arc discharge. In addition, even if an arc discharge is generated in all the vapor deposition sources and charged particles are generated, if the unnecessary vapor deposition source openings are covered with a shielding plate, the charged particles from the unnecessary vapor deposition source adhere to the shielding plate and the magnetic field lines Only the charged particles emitted from the selected deposition source enter the magnetic field lines.
The yoke used in the present invention is a magnetized material such as a yoke, and is not magnetized when it is separated from the magnetic pole, but magnetized when the magnetic pole is close.

  If the flight direction of the charged particles incident on the first magnetic field line group Ma and the charged particles incident on the second magnetic field line group Mb are bent in the same direction, the first and second magnetic field line groups Ma, Mb The orientations of may not be parallel.

  The film forming apparatus and manufacturing method of the present application include a semiconductor gate electrode, a gate insulating film, a barrier layer formed in a semiconductor trench, a magnetic material for a magnetic device, a coating of a mechanical part, and a catalyst layer for a carbon tube. And can be used in various fields.

Sectional drawing explaining the film-forming apparatus of a comprehensive Example Enlarged sectional view explaining the relationship between micro charged particles and magnetic field lines Sectional drawing explaining the film-forming apparatus of Example 1 Sectional drawing explaining the film-forming apparatus of Example 2 Sectional drawing explaining the film-forming apparatus of Example 3 Sectional drawing explaining the film-forming apparatus of Example 4 Sectional drawing explaining the film-forming apparatus of Example 5 (A) Plan view of film forming apparatus of Example 5 (b) Side view of film forming apparatus of Example 5 Sectional drawing explaining the positional relationship between the substrate holder and the evaporation source Sectional drawing explaining the film-forming apparatus of a prior art Sectional drawing explaining the state by which the charged particle was discharge | released with the film-forming apparatus of a prior art

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus 2 ... Vacuum chamber 5a-5f ... Magnetic field formation apparatus 11 ... Substrate 30a-30d ... Deposition source 32 ... Trigger electrode 34 ... Deposition material 36 ... Opening 45 ... Charged particle 52a , 52b, 62a, 62b, 72a, 72b... First and second magnet members 72c... Magnetizing means 75a to 75d.

Claims (15)

A vacuum chamber;
First and second vapor deposition sources for discharging charged particles into the vacuum chamber;
A magnetic field forming device for forming magnetic lines of force inside the vacuum chamber;
The magnetic field forming device includes first and second magnet members that face different magnetic poles and form the lines of magnetic force in a deflection region where the magnetic poles face each other.
A reversing device for reversing the polarity of the magnetic poles facing each other of the first and second magnet members and reversing the direction of the lines of magnetic force,
The first and second evaporation sources are film forming apparatuses configured to cause charged particles to enter the deflection region from opposite directions and to apply Lorentz forces in the same direction to charged particles having the same charge. The first and second magnet members are composed of permanent magnets,
The film forming apparatus according to claim 1, wherein the reversing device rotates the first and second magnet members so that positions of the N pole and the S pole of the first and second magnet members are switched. The reversing device has first and second rotation axes,
The film forming apparatus according to claim 2, wherein the first and second magnet members are configured to rotate around a central axis of the first and second rotation shafts.   The film forming apparatus according to claim 3, wherein the first and second magnet members are plate-shaped, and one end portions are attached to the first and second rotating shafts. The reversing device stops the first and second magnet members at first and second positions where different magnetic poles face each other,
5. The first and second magnet members according to claim 1, wherein the first and second magnet members face each other in parallel when stationary at the first position and when stationary at the second position, respectively. The film-forming apparatus of any one of Claims.   The first and second vapor deposition sources include magnetic lines formed when the first and second magnet members are stationary at the first position, and the first and second magnet members are at the second position. The film forming apparatus according to claim 5, wherein the charged particles are emitted in a direction perpendicular to both of the magnetic field lines formed when the film is stationary. The first and second magnet members are composed of electromagnets,
2. The reversing device according to claim 1, wherein the reversing device is configured to change a direction of a current supplied to the first and second magnet members and to change a direction of the magnetic force lines formed by the first and second magnet members. Deposition device. The first and second magnet members are composed of yokes,
The reversing device has magnetizing means in which magnetic poles having different polarities are formed,
The magnetic poles of the magnetizing means are configured so that different magnetic poles are formed at positions of the first and second magnet members facing each other when the magnetic poles of the magnetizing means come into contact with the first and second magnet members, respectively. The film forming apparatus according to 1, wherein
The reversing device is a film forming device configured to reverse the polarity of the magnetic poles of the magnetizing means contacting the first and second magnet members.   The film forming apparatus according to claim 8, wherein the reversing device is configured to rotate the magnetizing unit and exchange magnetic poles in contact with the first and second magnet members.   The film forming apparatus according to claim 9, wherein the magnetization unit is configured to rotate about a rotation axis passing through a center between the magnetic poles formed on the magnetization unit. The first and second vapor deposition sources emit the charged particles from opposite directions toward the same emission space,
The said 1st, 2nd magnet member is arrange | positioned on either side of the flight range of the said charged particle discharge | released from said 1st, 2nd vapor deposition source of any one of Claims 8 thru | or 10. A film forming apparatus,
Third and fourth vapor deposition sources for emitting the charged particles in a direction substantially opposite to the discharge direction of the charged particles of the first and second vapor deposition sources toward the emission space. When,
The third and fourth magnet members disposed on both sides in the flight direction of the charged particles emitted by the third and fourth vapor deposition sources,
The first to fourth vapor deposition sources are arranged such that the line segment connecting the first and second vapor deposition sources intersects the line segment connecting the third and fourth vapor deposition sources substantially perpendicularly. apparatus. A vacuum chamber;
First and second vapor deposition sources for discharging charged particles into the vacuum chamber;
A magnetic field forming device for forming magnetic lines of force inside the vacuum chamber;
The magnetic field forming device includes a power source,
Two sets of two unit electromagnets connected to the power source and facing each other across a space from which the charged particles are emitted,
When a voltage is applied to each unit electromagnet from the power source, a first magnetic field line formed between one unit of the unit electromagnets and a second magnetic field formed between the other unit of the unit electromagnets. Arranged so that the magnetic field lines are parallel to each other,
The power source is configured to apply a voltage so that the other direction of the first magnetic field lines and the second magnetic field lines are opposite to each other;
The first and second vapor deposition sources are configured such that charged particles are incident on the first and second magnetic lines of force from different directions, respectively, and a Lorentz force in the same direction is applied to charged particles having the same charge. apparatus.   13. The film forming apparatus according to claim 12, wherein the power source is configured not to energize the other set of unit electromagnets when energizing the set of unit electromagnets. A vacuum chamber;
Four vapor deposition sources that are arranged at equal intervals on the same circumference and emit charged particles from the opening toward the center located inside the vacuum chamber of the circumference,
Four yokes respectively located behind the opening in the radial direction from the center of the circumference to the outside;
Magnetizing means that passes through the center of the circumference and is arranged on an extension line of a rotation axis that intersects the plane in which the circumference is located perpendicularly, and is rotatable about the rotation axis.
The magnetizing means is capable of contacting the yoke located behind the opening for discharging charged particles from the opposite direction to the center of the circumference;
A film forming apparatus in which magnetic poles having different polarities are formed at positions of the magnetizing means in contact with the yoke. A moving mechanism capable of attaching and detaching the yoke with the magnetizing means;
The film forming apparatus according to claim 14, further comprising: a rotation mechanism that rotates the magnetizing unit spaced apart from the yoke about the rotation axis.

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