JP2007158316A5 - - Google Patents
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- JP2007158316A5 JP2007158316A5 JP2006302661A JP2006302661A JP2007158316A5 JP 2007158316 A5 JP2007158316 A5 JP 2007158316A5 JP 2006302661 A JP2006302661 A JP 2006302661A JP 2006302661 A JP2006302661 A JP 2006302661A JP 2007158316 A5 JP2007158316 A5 JP 2007158316A5
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- 239000000758 substrate Substances 0.000 claims 31
- 238000001514 detection method Methods 0.000 claims 19
- 238000009826 distribution Methods 0.000 claims 19
- 238000002788 crimping Methods 0.000 claims 18
- 239000000463 material Substances 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 11
- 238000003825 pressing Methods 0.000 claims 6
- 238000003384 imaging method Methods 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000005755 formation reaction Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 230000001681 protective Effects 0.000 claims 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
Claims (25)
前記基板上に、第２の導電膜を有する素子群を、前記第１の導電膜と前記第２の導電膜とが重なるように選択的に配置し、
前記基板と前記素子群とを圧着させることによって、前記第１の導電膜と前記第２の導電膜とを電気的に接続し、
前記圧着時に、前記素子群に加わる圧力値および圧力分布を、前記圧力検出フィルムにより検出し、
前記検出された圧力値および圧力分布に基づいて、前記検出後に前記素子群に加える圧力を制御することを特徴とする圧着方法。 A substrate provided with the first conductive film is disposed on the pressure detection film,
Wherein on the substrate, the element group having a second conductive film, before Symbol disposed first conductive film and before SL selectively to the second conductive film are overlapped,
By crimping the said element group and said substrate, and a pre-Symbol first conductive film and before Symbol second conductive film electrically connected,
During the crimping, the pressure values and the pressure distribution applied to the element group is detected by the pressure detection film,
Crimping method on the basis of the detected pressure values and the pressure distribution, and controlling the pressure applied to the element group after said detection.
前記基板上に、第２の導電膜を有する素子群を、前記第１の導電膜と前記第２の導電膜とが重なるように選択的に配置し、
前記基板と前記素子群とを圧着させることによって、前記第１の導電膜と前記第２の導電膜とを電気的に接続し、
前記圧着時に、前記素子群における前記第１の導電膜と前記第２の導電膜との接続領域に加わる圧力値および圧力分布と、前記接続領域以外の領域に加わる圧力値および圧力分布とを、前記圧力検出フィルムにより検出し、
前記検出された圧力値および圧力分布に基づいて、前記検出後に前記素子群に加える圧力を制御することを特徴とする圧着方法。 A substrate provided with the first conductive film is disposed on the pressure detection film,
Wherein on the substrate, the element group having a second conductive film, before Symbol disposed first conductive film and before SL selectively to the second conductive film are overlapped,
By crimping the said element group and said substrate, and a pre-Symbol first conductive film and before Symbol second conductive film electrically connected,
During the crimping, the pressure values and the pressure distribution applied before Symbol connecting region between the first conductive film and the front Stories second conductive film in the element group, and the pressure values and the pressure distribution applied to a region other than the connection region and detected by the pressure detection film,
Crimping method on the basis of the detected pressure values and the pressure distribution, and controlling the pressure applied to the element group after said detection.
前記圧力検出フィルムとして、シリコンダイヤフラム方式の圧力センサー、または、一対の電極間に感圧導電性ゴムが設けられた圧力センサーを用いることを特徴とする圧着方法。 In claim 1 or claim 2,
A pressure bonding method using a pressure sensor of a silicon diaphragm system or a pressure sensor in which a pressure-sensitive conductive rubber is provided between a pair of electrodes as the pressure detection film.
前記基板上に、第２の導電膜を有する素子群を、前記第１の導電膜と前記第２の導電膜とが重なるように選択的に配置し、
前記基板と前記素子群とを圧着させることによって、前記第１の導電膜と前記第２の導電膜とを電気的に接続し、
前記圧着時に、前記フィルムの発色の濃淡を光学的に測定することによって、前記素子群に加わる圧力値および圧力分布を検出し、
前記検出された圧力値および圧力分布に基づいて、前記検出後に前記素子群に加える圧力を制御することを特徴とする圧着方法。 Place the substrate provided with the first conductive film on the film on which the pressure is applied to the colored film,
Wherein on the substrate, the element group having a second conductive film, before Symbol disposed first conductive film and before SL selectively to the second conductive film are overlapped,
By crimping the said element group and said substrate, and a pre-Symbol first conductive film and before Symbol second conductive film electrically connected,
Wherein upon crimping, the shading of the color of the film by light histological measures, detects the pressure values and the pressure distribution applied to the element group,
Crimping method on the basis of the detected pressure values and the pressure distribution, and controlling the pressure applied to the element group after said detection.
前記フィルムの発色の濃淡を撮像装置により測定することを特徴とする圧着方法。A pressure-bonding method, wherein the color density of the film is measured with an imaging device.
前記基板上に前記素子群を配置する際に、前記基板と前記素子群の間に異方導電性フィルムまたは異方導電性ペーストを設けることを特徴とする圧着方法。 In any one of Claims 1 thru | or 5,
Crimping method characterized by when placing the element group on the substrate, providing an anisotropic conductive film or anisotropic conductive paste between the element group and said substrate.
前記圧着と同時に加熱処理を行うことを特徴とする圧着方法。 In any one of Claims 1 thru | or 6,
Crimping method and performing the compression at the same time as the heat treatment.
前記素子群として、可撓性を有する素子群を用いることを特徴とする圧着方法。 In any one of Claims 1 thru | or 7,
A crimping method using a flexible element group as the element group.
前記押圧台を介して被圧着体に圧力を加える加圧手段と、
前記被圧着体に加わる圧力値および圧力分布を検出する検出フィルムと、
前記検出した圧力値および圧力分布に基づいて、前記加圧手段を制御する制御手段と、を有することを特徴とする圧着装置。 A pressing table;
A pressurizing means for applying pressure to the object to be bonded via the pressing table;
Wherein a detection film which detects the pressure values and the pressure distribution that Kuwawa to be pressure-bonded body,
Wherein based on the detected pressure values and the pressure distribution, pressure bonding apparatus characterized by and a control means for controlling said pressurizing means.
前記圧力検出フィルムは、シリコンダイヤフラム方式の圧力センサー、または、一対の電極間に感圧導電性ゴムが設けられた圧力センサーであることを特徴とする圧着装置。 In claim 9,
The pressure-sensitive adhesive device is characterized in that the pressure detection film is a silicon diaphragm type pressure sensor or a pressure sensor in which a pressure-sensitive conductive rubber is provided between a pair of electrodes .
押圧台と、
前記押圧台を介して、前記フィルム上に配置された被圧着体に圧力を加える加圧手段と、
前記フィルムの発色を光学的に測定することによって、前記被圧着体に加わる圧力値および圧力分布を検出する撮像装置と、
前記検出した圧力値および圧力分布に基づいて、前記加圧手段を制御する制御手段と、を有することを特徴とする圧着装置。 A film that develops color under pressure ,
A pressing table;
Pressurizing means for applying pressure to the object to be bonded disposed on the film via the pressing table;
By measuring the color optically of the film, and an imaging device for detecting the pressure values and the pressure distribution applied to the object to be pressure-bonded body,
Wherein based on the detected pressure values and the pressure distribution, pressure bonding apparatus characterized by and a control means for controlling said pressurizing means.
前記フィルムは、透光性を有する支持基板上に設けられていることを特徴とする圧着装置。 In claim 11 ,
Before notated Irumu is crimping apparatus which is characterized in that provided on the supporting substrate having a light-transmitting property.
前記支持基板は、前記撮像装置と前記フィルムの間に設けられていることを特徴とする圧着装置。The crimping apparatus, wherein the support substrate is provided between the imaging device and the film.
前記基板上に、素子群を、前記導電膜と重なるように選択的に配置し、An element group is selectively disposed on the substrate so as to overlap the conductive film,
前記基板と前記素子群とを圧着させることによって、前記導電膜と前記素子群とを電気的に接続し、By electrically bonding the substrate and the element group, the conductive film and the element group are electrically connected,
前記圧着時に、前記素子群に加わる圧力値および圧力分布を前記圧力検出フィルムにより検出し、At the time of the pressure bonding, a pressure value and a pressure distribution applied to the element group are detected by the pressure detection film,
前記検出された圧力値および圧力分布に基づいて、前記検出後に前記素子群に加える圧力を制御することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, comprising: controlling a pressure applied to the element group after the detection based on the detected pressure value and pressure distribution.
前記基板上に、素子群を、前記導電膜と重なるように選択的に配置し、An element group is selectively disposed on the substrate so as to overlap the conductive film,
前記基板と前記素子群とを圧着させることによって、前記導電膜と前記素子群とを電気的に接続し、By electrically bonding the substrate and the element group, the conductive film and the element group are electrically connected,
前記圧着時に、前記フィルムの発色の濃淡を光学的に測定することによって、前記素子群に加わる圧力値および圧力分布を検出し、At the time of the pressure bonding, the pressure value and the pressure distribution applied to the element group are detected by optically measuring the color density of the film,
前記検出された圧力値および圧力分布に基づいて、前記検出後に前記素子群に加える圧力を制御することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, comprising: controlling a pressure applied to the element group after the detection based on the detected pressure value and pressure distribution.
前記剥離層の上方に、トランジスタを含む素子形成層と、前記トランジスタと電気的に接続する第１の導電膜と、を有する素子層を形成し、
前記素子層に第１のシート材を貼り合わせ、
前記素子層および前記第１のシート材を、前記第１の基板から剥離し、
前記剥離によって露出した前記素子層の表面に第２のシート材を貼り合わせ、
前記第１のシート材を前記素子層から剥離し、
前記第１の導電膜と電気的に接続する第２の導電膜を形成することによって、前記素子層と、前記第２の導電膜と、前記第２のシート材と、を有する素子群を形成し、
圧力検出フィルム上に、第３の導電膜が設けられた第２の基板を配置し、
前記第２の基板上に、前記素子群を、前記第２の導電膜と前記第３の導電膜とが重なるように選択的に配置し、
前記第２の基板と前記素子群とを圧着させることによって、前記第２の導電膜と前記第３の導電膜とを電気的に接続し、
前記圧着時に、前記素子群に加わる圧力値および圧力分布を前記圧力検出フィルムにより検出し、
前記検出された圧力値および圧力分布に基づいて、前記検出後に前記素子群に加える圧力を制御することを特徴とする半導体装置の作製方法。 Forming a release layer on the first substrate;
The above release layer was formed and the element formation layer including a transistor, a first conductive film connected before Symbol in transistor electrically, an element layer having,
Before Symbol element layer bonded to the first sheet material,
The element layer and the first sheet material, and peeled from the first substrate,
A second sheet material is bonded to the surface of the element layer exposed by the peeling ,
Peeling off the first sheet material from the element layer;
By forming the second conductive film connected to the first conductive film and electrically, forming with the element layer, and the second conductive film, wherein the second sheet material, the element group having an And
A second substrate provided with a third conductive film is disposed on the pressure detection film,
On the second substrate, the element group, and selectively positioned such that the second conductive film and the third conductive film are overlapped,
By crimping the second substrate and the element group, the second conductive film and the third conductive film are electrically connected ,
At the time of the pressure bonding, a pressure value and a pressure distribution applied to the element group are detected by the pressure detection film,
The method for manufacturing a on the basis of the detected pressure values and the pressure distribution, a semiconductor device characterized by controlling the pressure applied to the element group after said detection.
前記剥離層の上方に、トランジスタを含む素子形成層と、前記トランジスタと電気的に接続する第１の導電膜と、を有する素子層を形成し、
前記素子層に第１のシート材を貼り合わせ、
前記素子層および前記第１のシート材を、前記第１の基板から剥離し、
前記剥離によって露出した前記素子層の表面に第２のシート材を貼り合わせ、
前記第１のシート材を前記素子層から剥離し、
前記第１の導電膜と電気的に接続する第２の導電膜を形成することによって、前記素子層と、前記第２の導電膜と、前記第２のシート材と、を有する素子群を形成し、
圧力が加わった部分が発色するフィルム上に、第３の導電膜が設けられた第２の基板を配置し、
前記第２の基板上に、前記素子群を、前記第２の導電膜と前記第３の導電膜とが重なるように選択的に配置し、
前記第２の基板と前記素子群とを圧着させることによって、前記第２の導電膜と前記第３の導電膜とを電気的に接続し、
前記圧着時に、前記フィルムの発色の濃淡を光学的に測定することによって、前記素子群に加わる圧力値および圧力分布を検出し、
前記検出された圧力値および圧力分布に基づいて、前記検出後に前記素子群に加える圧力を制御することを特徴とする半導体装置の作製方法。 Forming a release layer on the first substrate;
The above release layer was formed and the element formation layer including a transistor, a first conductive film connected before Symbol in transistor electrically, an element layer having,
Before Symbol element layer bonded to the first sheet material,
The element layer, and the first sheet material, and peeled from the first substrate,
A second sheet material is bonded to the surface of the element layer exposed by the peeling ,
Peeling off the first sheet material from the element layer;
By forming the second conductive film connected to the first conductive film and electrically, forming with the element layer, and the second conductive film, wherein the second sheet material, the element group having an And
A second substrate provided with a third conductive film is placed on a film that develops a colored portion where pressure is applied,
On the second substrate, the element group, and selectively positioned such that the second conductive film and the third conductive film are overlapped,
By crimping the second substrate and the element group, the second conductive film and the third conductive film are electrically connected ,
Wherein upon crimping, the shading of the color of the film by light histological measures, detects the pressure values and the pressure distribution applied to the element group,
The method for manufacturing a on the basis of the detected pressure values and the pressure distribution, a semiconductor device characterized by controlling the pressure applied to the element group after said detection.
前記第２の基板上に前記素子群を配置する際に、前記第２の基板と前記素子群の間に異方導電性フィルムまたは異方導電性ペーストを設けることを特徴とする半導体装置の作製方法。 In claim 16 or claim 17 ,
Preparation of the when placing the element group on the second substrate, a semiconductor device characterized by providing an anisotropic conductive film or anisotropic conductive paste between the element group and the second substrate Method.
前記第１のシート材を前記素子層から剥離する前に、前記素子層に選択的にレーザ光を照射することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the element layer is selectively irradiated with laser light before the first sheet material is peeled from the element layer.
前記第２の導電膜はバンプとして機能し、The second conductive film functions as a bump,
前記第３の導電膜はアンテナとして機能することを特徴とする半導体装置の作製方法。The method for manufacturing a semiconductor device, wherein the third conductive film functions as an antenna.
前記素子層は、前記第１の導電膜の端部を覆う保護膜を有し、The element layer has a protective film covering an end portion of the first conductive film,
前記第２の導電膜は、前記保護膜上に形成することを特徴とする半導体装置の作製方法。The method for manufacturing a semiconductor device, wherein the second conductive film is formed over the protective film.
前記第２のシート材として、可撓性を有するフィルムを用いることを特徴とする半導体装置の作製方法。 In any one of claims 16 to 21 ,
A method for manufacturing a semiconductor device, wherein a flexible film is used as the second sheet material.
前記圧力検出フィルムとして、シリコンダイヤフラム方式の圧力センサー、または、一対の電極間に感圧導電性ゴムが設けられた圧力センサーを用いることを特徴とする半導体装置の作製方法。 In claim 14 or claim 16 ,
A method for manufacturing a semiconductor device, wherein a pressure sensor of a silicon diaphragm type or a pressure sensor in which a pressure-sensitive conductive rubber is provided between a pair of electrodes is used as the pressure detection film.
前記フィルムの発色の濃淡を撮像装置により測定することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the color density of the film is measured with an imaging device.
前記圧着と同時に加熱処理を行うことを特徴とする半導体装置の作製方法。
25. In any one of claims 14 to 24 ,
The method for manufacturing a semiconductor device which is characterized in that the crimping at the same time as the heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006302661A JP5041787B2 (en) | 2005-11-11 | 2006-11-08 | Crimping method and manufacturing method of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005328030 | 2005-11-11 | ||
| JP2005328030 | 2005-11-11 | ||
| JP2006302661A JP5041787B2 (en) | 2005-11-11 | 2006-11-08 | Crimping method and manufacturing method of semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007158316A JP2007158316A (en) | 2007-06-21 |
| JP2007158316A5 true JP2007158316A5 (en) | 2009-10-22 |
| JP5041787B2 JP5041787B2 (en) | 2012-10-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2006302661A Expired - Fee Related JP5041787B2 (en) | 2005-11-11 | 2006-11-08 | Crimping method and manufacturing method of semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009063730A1 (en) * | 2007-11-12 | 2009-05-22 | Nec Corporation | Screen printing mask, solder paste printing machine using the mask, and solder paste printing method using the mask |
| MY160373A (en) * | 2010-07-21 | 2017-03-15 | Semiconductor Components Ind Llc | Bonding structure and method |
| CN102501542B (en) * | 2011-10-20 | 2015-02-18 | 北京德鑫泉物联网科技股份有限公司 | Lamination equipment with visual function |
| WO2024111278A1 (en) * | 2022-11-21 | 2024-05-30 | 富士フイルム株式会社 | Manufacturing device |
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| JPH10321674A (en) * | 1997-05-15 | 1998-12-04 | Toray Eng Co Ltd | Chip bonding head and method for measuring its parallelism to tool |
| JP2980073B2 (en) * | 1997-08-29 | 1999-11-22 | 日本電気株式会社 | Thermocompression bonding apparatus and control method thereof |
| JP2001291738A (en) * | 2000-04-06 | 2001-10-19 | Toshiba Corp | Tape carrier package and method of manufacturing flat display using the same |
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