JP2007156019A - Display device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a transflective display device which has a high reflection efficiency and a high transmittance by forming smooth ruggedness on a surface of a foundation film forming a reflection electrode, without the reduction of transmittance. <P>SOLUTION: A coating-type inorganic insulating film material is used in an inter-layer insulating layer INS provided on a principal surface of a thin film transistor substrate SUB1 being a first substrate, and a rugged surface with angles which is formed by a photo process is reflown on this coating film to obtain a smooth surface rugged BUP, and a reflection electrode RT is formed on the BUP to obtain an inside diffusion plate. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a display device having a light reflection film or a reflection electrode inside a transparent substrate constituting a display surface of the device, such as a reflective or transflective liquid crystal display device or an electrophoretic display device, and a method for manufacturing the same. About.

  This type of display device includes a first substrate provided with a pixel selection circuit formed of a thin film transistor and a second substrate constituting a display surface, and a light reflecting layer (film) or reflection is formed on the first substrate. Reflective type that has an electrode and reflects light incident from the outside through the second substrate by a reflective film or reflective electrode provided on the inner surface, or a reflective layer or reflective electrode provided in part of each pixel Further, a transflective type (also referred to as a partial reflection type) is known. Examples of these display devices include a display device in which liquid crystal or an electrophoretic substance is sealed between at least a pair of substrates, such as a liquid crystal display device or an electrophoretic display device. Here, a transflective liquid crystal display device that is typical of this type of display device will be described as an example.

  A transflective liquid crystal display device has a reflective region and a transmissive region in one pixel region. In the reflection region, the external light incident from the second substrate, which is the substrate on the display surface side, is reflected by a reflective film or a reflective electrode provided on a part of the pixels on the first substrate, and is the substrate on the display surface side. The light is emitted from the second substrate. On the other hand, in the transmissive region, light from the auxiliary light source device (backlight) or the like incident from the first substrate is transmitted through the liquid crystal layer and emitted from the second substrate. Note that a transparent glass substrate is usually used for both the first substrate and the second substrate. In the following, for example, the “reflective film” may be referred to as “reflective layer”, but these should be understood to be the same.

Liquid crystal display devices include various display methods such as a TN method, an IPS method, and a VA method. In a transflective liquid crystal display device, it is desirable to form unevenness for diffuse reflection only in a reflective region so as not to affect the characteristics of transmissive display. Further, in the case where a color filter is provided on the second substrate, a brightness (opening) is provided in a part of the color filter, thereby increasing the amount of reflected light and improving the brightness. An organic material such as acrylic resin is used for the inner surface diffusion plate. Note that Patent Document 1 and Patent Document 2 can be cited for transflective display devices.
JP 2003-57640 A JP 2003-207795 A

  The organic material such as acrylic forming the inner diffuser plate that is the base of the reflective film has a low heat resistance of 230 ° C., and can be applied to an LTPS (low temperature polysilicon semiconductor) interlayer insulating layer that requires 400 ° C. There wasn't. Also in the manufacture of a-Si TFT (amorphous silicon thin film transistor), the CVD film formation temperature is lower than LTPS, but is about 300 ° C., and cannot be put into the CVD process after the organic film is formed.

  On the other hand, in the case of an inorganic insulating film used for an interlayer insulating layer or the like in a thin film transistor substrate which is a first substrate of a display device, although it has a heat resistance of about 300 to 400 ° C. which is a CVD temperature, its surface is smooth by etching. Uneven shape could not be formed.

The reflective layer provided on the first substrate is formed on a smooth uneven surface obtained by reflowing the surface of the insulating layer in the lower layer (side closer to the first substrate) of the pixel electrode or the counter electrode (also referred to as a common electrode). By doing so, diffuse reflection is given and uniform light reflection is realized. Usually, this insulating layer is an organic film. Generally, an organic passivation (PAS) film is used for the inner surface diffusion plate, and smooth surface irregularities are formed by reflowing the surface. Since the organic PAS film has a heat resistance of only about 230 ° C., it has been difficult to apply it to an interlayer insulating layer that requires a heat resistance of 400 ° C. Further, usually, the Si0 ₂ film is etched in the interlayer insulating film formed in a film forming method such as CVD, it is difficult to form a smooth irregularities on the surface thereof.

  An object of the present invention is to form a smooth projection and depression on the surface of a base film on which a reflective film or a reflective electrode is formed without reducing the transmittance, thereby providing a transflective display device having high reflection efficiency and high transmittance. There is in getting.

  Currently, some of the coating-type inorganic insulating film materials that are being studied for application as high-permeability planarization films are supplied to the inorganic film by supplying more moisture than usual during the humidification process. Nevertheless, the surface was found to reflow. In the present invention, by utilizing this phenomenon, this coating type inorganic insulating film material is applied to the base of the reflective film such as the interlayer insulating layer, and the generally angular uneven surface formed on the coating film by a photo process or the like is reflowed. Thus, an inner surface diffusion layer having smooth surface irregularities is obtained, and a reflective film or the like is formed on the surface to constitute a display device. Furthermore, the present invention realizes a color filter-on-array structure in which a color filter layer is provided on the thin film transistor substrate side in the transflective display mode, which has been impossible with the prior art.

Typical characteristics of the partially transmissive display device according to the present invention are as follows. That is,
(1) An inner surface diffusing plate having a reflective film formed on smooth irregularities formed by reflowing the surface of the inorganic insulating film was provided.
(2) A flat PAS film is formed on a reflective region having an inner surface diffuser plate having a reflective film formed on the irregularities formed on the surface of the inorganic insulating film applied to the interlayer insulating layer, and a transmissive region of only the flat interlayer insulating layer. A comb-like transparent electrode was formed.
(3) A reflection region having an inner surface diffuser formed on the irregularities formed on the surface of the inorganic insulating film applied to the interlayer insulating layer, and a flat on the transmission region where a transparent electrode is formed on the flat interlayer insulating layer A transparent electrode having a linear portion was formed through a conductive passivation film.
(4) An interlayer insulating film having a partially uneven surface and a flat passivation layer were both formed using an inorganic coating type insulating film.
(5) A reflective region having a passivation layer made of an inorganic film, having a gentle irregularity on its surface and having a reflective electrode thereon, and a transmissive region having a transparent electrode formed on a surface with high surface flatness A vertical alignment type liquid crystal or a horizontal alignment type liquid crystal is sealed between the counter substrate and the counter substrate.
(6) On a reflective region having an inner surface diffusion plate formed with a reflective film on the irregularities formed on the surface of the inorganic insulating film applied to the interlayer insulating layer, and on a transmissive region where a transparent electrode is formed on the flat interlayer insulating layer A transparent electrode having a color resist layer and having a linear portion on the color resist layer was formed.

  The present invention is not limited to the configurations described in the claims, the above configurations, and the configurations described in the embodiments described below, and various modifications are possible within the scope of the technical idea of the present invention. Is possible.

  The present invention improves the luminance in a partial reflection type display device using liquid crystal rotation or electrophoresis. In particular, the transflective liquid crystal mode partial reflection type display device having a single liquid crystal gap interval, for example, a twist type transflective IPS (In Plane Switching), a single gap transflective VA (Vertical Alignment), and the inner diffusion layer according to the present invention. By providing the reflective film or the reflective electrode with the base as the base, the luminance and contrast in the transmissive display mode are also improved.

  By forming a hole for light transmission in a part of the color filter portion through which reflected light is transmitted in the reflection region in the pixel, the reflection luminance can be improved without deteriorating the color purity in the transmission region.

  By using an inorganic material having a higher transmittance than the organic material in the transmission region, the transmittance of the transmission part is improved and light absorption on the short wavelength side as in the organic material is eliminated, so that yellow coloring can be prevented. It becomes possible.

  In addition, after forming the reflective electrode and the transmissive electrode, a color filter is formed on the array substrate as a planarizing layer, and a comb-like electrode is formed on the upper layer, so that the color filter of the transflective display device is formed on the thin film transistor substrate ( Array substrate). As a result, the overlap tolerance between the array substrate and the counter substrate is greatly improved, and the aperture ratio of the partial reflection type display device can be greatly improved.

  Hereinafter, the best mode of the present invention will be described in detail with reference to examples in which the present invention is applied to a liquid crystal display device.

FIG. 1 is a cross-sectional view showing a configuration in the vicinity of one pixel of a liquid crystal display device illustrating Embodiment 1 of the present invention. In FIG. 1, after a silicon film SI is formed on a transparent insulating first substrate (thin film transistor substrate) SUB1, it is crystallized (polysiliconized) by laser annealing. After forming the TEOS-Si0 ₂ film as a gate insulating film GI, the gate electrode GT formed and processed.

  As the interlayer insulating layer INS, polysilazane, which is a coating type insulating film material, is applied, exposed, and developed. At this time, a humidification process is performed in order to remove the nitrogen component in the polysilazane film. The order is: coating-exposure-humidification (1) -development-full exposure-humidification (2) -firing. Normally, the humidification (2) time required for nitrogen removal is about 4 minutes, but here the humidification treatment is carried out in about 8 minutes. Usually, the first substrate coated with polysilazane is baked while maintaining the substrate surface in a nearly vertical state. By applying excessive humidification at the time of firing, the surface reflows and rounds off, resulting in a rounded corner.

  The contact hole portion CH is irradiated with light of an appropriate exposure amount and developed to a state where the hole penetrates from the interlayer insulating layer INS to the gate insulating film GI. On the other hand, in the interlayer insulating layer INS in the inner surface diffusion region RFA, the half exposure pattern of the half exposure photomask is used, and development for realizing the underexposure state is performed to make the remaining film state in the lower layer, so that unevenness having generally corners is formed. Next, a smooth surface unevenness BUP can be formed on the surface of the interlayer insulating layer INS by performing the above-described excessive humidification treatment and baking.

  On the interlayer insulating layer INS, the source electrode SD1, the drain electrode SD2, and the reflective electrode (here, the reflective film) RT are formed using the same metal film as the source electrode SD1 and the drain electrode SD2. For the convenience of forming a reflective electrode, a wiring structure having a high surface reflectance is preferable. For example, as the material of the source electrode SD1 and the drain electrode SD2 which are the same as the reflective electrode, titanium or molybdenum is used for the base for contact with the silicon film, and aluminum or silver having high reflectivity is used for the upper layer. good.

  Then, on the source electrode SD1, the drain electrode SD2, and the reflective electrode RT, an insulating film is applied as a protective film on the plasma SiN film PAS formed by the CVD method to form a surface planarizing film OC. The coating type insulating film for forming the surface planarizing film OC may be either an organic film or an inorganic film. When a photosensitive material is used for the surface planarizing film OC, an opening reaching the source electrode SD1 may be formed by processing the inorganic protective film PAS using the through hole TH formed by exposure and development as a mask.

  The comb electrode for the pixel electrode PX of ITO is connected to the source electrode SD1 through the contact layer CNT. The counter electrodes CT that mesh with the pixel electrodes PX alternately are formed of ITO. In the IPS mode, a lateral electric field substantially parallel to the substrate surface is applied to the liquid crystal LC, and the liquid crystal on the reflective electrode RT is driven in the reflection area RFA, and incident light from outside light is switched to generate contrast in the reflected light.

  Similarly, in the transmissive region TRA, the liquid crystal is driven between the comb electrodes (pixel electrode PX and the counter electrode CT) by a horizontal electric field, and light from a backlight (not shown) installed on the back surface of the first substrate SUB1 is switched. .

  Incident light from the outside passes through the color filter CF formed on the main surface (inner surface) of the second substrate (counter substrate, color filter substrate) SUB2 twice in the reflection area RFA. A hole WN is processed in a part of the color filter CF so that light can pass therethrough. As a result, it is possible to maintain the balance of the amount of reflected light with respect to the transmission region TRA where light passes through the color filter only once. The alignment films of the first substrate SUB1 and the second substrate are not shown.

  As described above, in the first embodiment, the reflection area RFA and the transmission area TRA can be clearly divided, so that the balance between the reflection characteristics and the transmission characteristics can be adjusted by drilling the color filter.

  Conventionally, the unevenness of the reflective electrode RT (here, the reflective film) RT formed on the surface of the inner surface diffusion layer is formed following the unevenness formed on the surface of the inner surface diffusion layer, which is the lower organic film. This organic film has low heat resistance, and film deterioration occurs when heated at 230 ° C. or more, and the light transmittance of the film rapidly deteriorates. In Example 1, it is possible to avoid deterioration of light transmittance due to heat treatment by forming surface irregularities using an inorganic insulating film under the reflective electrode RT.

  In the liquid crystal display having a single gap structure in which the liquid crystal is driven at substantially the same gap interval in the reflective area RFA and the transmissive area TRA according to Example 1, when the inner surface diffusion plate is formed using the inorganic insulating film, the transmission of the transmissive area is achieved. The transmissive display characteristics can be improved without reducing the rate.

  FIG. 2 is an explanatory diagram of a process for forming a diffuse reflection layer (underlayer) having a smooth uneven surface using an inorganic coating-type insulating film. Photosensitive polysilazane is used as an inorganic coating type insulating film material. This photosensitive polysilazane film is soluble in an alkali developer by generating an acid in the photosensitive part during exposure and changing the Si—N bond to the Si—O bond by humidification. Therefore, as shown in FIG. 2A, the contact hole portion is exposed to the lower layer using the full exposure opening pattern portion FHL of the half exposure photomask MSK to form a through hole FPN to form a reflection film. The concavo-convex forming portion to be exposed is exposed halfway using the half exposure opening pattern portion HHL of the half exposure photomask MSK so as to be an engraved portion HPN. Next, this is heated and humidified, and is immersed in an alkaline developer to form a concavo-convex structure having a corner as shown in the lower side of FIG. 2A in the interlayer insulating layer INS.

  Next, the interlayer insulating layer INS having a concavo-convex structure with corners is further heated while being humidified to change into Si—N bonds and Si—O bonds in the film. At this time, if an excessive amount of moisture is supplied than usual, not only the Si—O bonds in the film increase, but also the Si—O network of the film breaks, forming an aggregate of fine Si—O bonds. Heat deformation is likely to occur.

  By utilizing this phenomenon, it becomes possible to cause reflow similar to reflow (thermal deformation) even in an inorganic material such as polysilazane when the organic material exceeds the glass transition point during firing. FIG. 2B shows the film shape when the polysilazane film is normally subjected to a humidification time of about 4 minutes up to about 8 minutes and then baked at 400 ° C. As described above, an inorganic film can be applied to a portion requiring heat resistance, and the surface thereof can be processed to have a smooth unevenness BUP. This process is the same for each of the following examples.

  FIG. 3 is a cross-sectional view showing a configuration in the vicinity of one pixel of a liquid crystal display device illustrating Embodiment 2 of the present invention. In FIG. 3, as in the first embodiment, the second embodiment applies a VA liquid crystal display mode to a single gap structure having a reflective region and a transmissive region having a single liquid crystal gap width. The same reference numerals as those in FIG. 1 correspond to the same functional parts. Description of parts common to FIG. 1 is omitted.

  On the overcoat layer OC using polysilazane as a high-transmittance coated inorganic material, the reflective area RFA, the reflective electrode RT disposed in the transmissive area TRA, and the transparent pixel electrode PX are formed. The reflective electrode RT and the transparent pixel electrode PX are electrically connected, and are connected to the source electrode SD1 of the thin film transistor at a portion not shown. A surface (inner surface diffusion layer) having a smooth surface irregularity BUP is formed on the overcoat layer OC serving as a base layer of the reflective electrode RT by using the reflow of the coating type inorganic insulating film. Then, alignment control protrusions PJ are formed on the color filter CF formed on the inner surface of the counter substrate SUB2, and the vertically aligned liquid crystal LC is sealed. An alignment film (not shown) is formed on the first substrate SUB1 and the second substrate. Instead of the alignment control protrusion PJ, a slit may be provided in the counter electrode CT.

  The overcoat layer OC using polysilazane has a high transmittance of 8% on the short wavelength side and 3% on the long wavelength side in the transmission region TRA compared to a flattening film formed of an organic material such as a normal acrylic resin. Since this can be realized, the transmission luminance can be improved. In addition, since the overcoat layer OC using polysilazane has no yellow coloration due to absorption on the short wavelength side as compared with the organic material, it is possible to realize the transmission characteristics with no coloration and good chromaticity. In the second embodiment, the case of the VA mode has been described. However, the present invention can also be applied to a horizontal alignment mode such as a TN type. In that case, a horizontal alignment film is used. For example, a TN type liquid crystal is used. The orientation control protrusion PJ may be omitted.

  FIG. 4 is a cross-sectional view showing a configuration in the vicinity of one pixel of a liquid crystal display device illustrating Embodiment 3 of the present invention. In FIG. 4, the counter substrate is not shown. This embodiment is a liquid crystal display device in which a thin film transistor (TFT) using amorphous silicon is used for a pixel switch. First, as in each example, a polysilazane film as an inorganic coating type insulating film INS is formed on a transparent first substrate SUB1 suitable for glass. A smooth uneven surface BUP is formed in the reflection area RFA of the inorganic coating type insulating film INS, and the transmission area TRA is set to a flat surface. Then, the gate electrode GT and the reflective electrode RCT are formed on this surface. In this embodiment, a counter electrode TCT composed of a transparent electrode such as ITO for generating a fringe electric field is formed in the same layer as the gate electrode GT and the reflective electrode RCT. The reflective electrode RCT and the counter electrode TCT are formed in a planar shape, for example.

A SiN film as a gate insulating layer / interlayer insulating layer GI, an a-Si film SI as a semiconductor layer, and an n ⁺ a-Si film as a contact layer are continuously formed by CVD. The Si film is processed into an island shape, and a source electrode SD1 and a drain electrode SD2 are formed thereon using a metal film. A coating type insulating film is formed as the protective layer PAS, and the through hole TH is formed.

  Both the reflective area RFA and the transmissive area TRA form a pixel electrode PX (for example, comb-like) having a linear portion of ITO. In the structure of this embodiment, the reflective area RFA and the transmissive area TRA both generate fringe electric fields toward the reflective electrode RCT and counter electrode TCT located in the lower layer, and the liquid crystal LC corresponding to the lateral electric field is a plane substantially parallel to the substrate surface. Can be rotated within. The coating type planarization insulating film used as the passivation vane layer PAS may be an organic material or an inorganic material. However, by using the inorganic insulating film, the transmittance of the film can be improved and the film is not colored.

  FIG. 5 is a cross-sectional view showing a configuration in the vicinity of one pixel of a liquid crystal display device for explaining a fourth embodiment of the present invention. In Example 4, the present invention is applied to a transflective liquid crystal display device having a so-called color filter on array structure. The fourth embodiment differs from the first embodiment in that the color filter layer CF is formed in the flattening film portion in the same cross-sectional structure as the first embodiment described with reference to FIG.

  In the structure of Example 4, in the reflective area RFA, there is a diffuse reflector (reflective film) below the color filter layer CF, and ITO comb electrodes (pixel electrode PX, counter electrode CT) are provided on the color filter layer CF. Therefore, the color filter on array structure can be realized even in the reflection mode. The transmission part TRA has a normal color filter on array structure. An alignment film (not shown) is formed in a portion in direct contact with the liquid crystal LC. The color filter on-array structure can also be applied to the third embodiment.

  Here, for comparison, the case of a normal multi-gap structure will be described. When an ECB (Electrically Controlled Birefringence) transflective liquid crystal mode is used, the multi-gap structure is a multi-gap structure in which the liquid crystal gap between the reflective part and the transmissive part is different. In such a structure, when the color filter on array structure is applied, there is no problem in the transmissive region, but in the reflective region, the color resist will not function because the color filter is placed under the reflective electrode. End up.

  On the other hand, according to the present invention, a semi-transmissive color filter-on-array structure can be realized in the single gap structure as shown in FIG. Therefore, the inorganic coating type insulating layer having smooth unevenness according to the present invention is indispensable for the interlayer insulating layer INS located under the reflective electrode RT.

  In the reflection area RFA in FIG. 5, since there is the reflection electrode RT, a fringe electric field is generated also in the meantime, and the alignment axis of the liquid crystal on the ITO comb electrode is rotated. Therefore, the reflectance is improved even at a low voltage. Although not shown, an ITO counter electrode for generating a fringe electric field may be formed on the insulating film INS in the transmissive region TRA.

  In FIG. 5, although there is no electrode as described above in the lower layer of the color filter in the transmissive area TRA, by forming the transmissive ITO counter electrode in the transmissive area TRA as described above, the same as in the reflective area RFA. In addition, a fringe electric field can be generated and the transmittance on the comb electrode of ITO is also improved. In this case, in order to sufficiently apply the fringe electric field to the liquid crystal, it is necessary to set the dielectric constant of the color filter material high.

  Since the ordinary color resist material has a dielectric constant of only 3 to 4, a sufficient electric field cannot be applied to the liquid crystal as it is. By setting the dielectric constant to about 10, an electric field is efficiently applied to the liquid crystal, and driving at a low voltage is possible. In order to increase the dielectric constant, it is preferable to disperse a colorless high dielectric constant material in the color filter. For example, titanium oxide or tantalum oxide has a large dielectric constant of 50 to 100, and a high dielectric constant color filter can be obtained with a small amount of dispersion.

  FIG. 6 is a cross-sectional view showing a configuration in the vicinity of one pixel of a liquid crystal display device according to Embodiment 5 of the present invention. In Example 6, the common electrode CT made of ITO and the reflective electrode RT were first formed on the reflective region on the inorganic coating type insulating film having the gentle unevenness BUP in the reflective region, and the film was formed thereon by the CVD method. An insulating film (capacitance film) is formed with the plasma SiN film IL. A comb-teeth electrode PX, which is a pixel electrode made of ITO, is formed thereon, and a fringe electrode is applied between the comb-teeth electrode PX and the common electrode CT of ITO. The liquid crystal is sealed so that the liquid crystal rotates mainly parallel to both substrates against this electric field. The pixel electrode is not limited to a comb shape, and may have a linear portion.

  In the reflective area RFA, an unevenness is formed by the same process as in Examples 1 to 4 using a coating-type insulating film, and an internal diffusion plate is formed by forming a reflective film RT on top thereof. Since the interlayer insulating film is formed by using the CVD method, the interlayer insulating film IL having a certain thickness according to the uneven shape can be formed, so that a uniform vertical electric field can be applied regardless of the reflective region or the transmissive region. There is a feature.

  As in Example 5, in order to form an interlayer insulating film with a CVD film on the inner surface diffusion plate, the base must have heat resistance, and by applying irregularities using an inorganic coating type insulating film, It is possible to form a stable plasma SiN film on the top.

  When a plasma SiN film is formed on an organic film, there is a problem that the organic film is altered and colored due to plasma damage, and the formed SiN film is unstable due to degassing from the organic film. There is also a problem that the film quality is deteriorated and processing defects occur.

  However, according to the present invention, such problems can be eliminated by applying an inorganic coating type insulating film having high heat resistance.

  In Examples 1 to 5, it is possible to form a coating-type inorganic insulating film for forming the unevenness BUP on a flat base. This eliminates the need to form a coating-type inorganic insulating film on the base having irregularities.

It is sectional drawing which shows the structure of 1 pixel vicinity of the liquid crystal display device explaining Example 1 of this invention. It is explanatory drawing of the formation process of the diffuse reflector which has a smooth uneven surface using an inorganic type coating type insulating film. It is sectional drawing which shows the structure of 1 pixel vicinity of the liquid crystal display device explaining Example 2 of this invention. It is sectional drawing which shows the structure of 1 pixel vicinity of the liquid crystal display device explaining Example 3 of this invention. It is sectional drawing which shows the structure of 1 pixel vicinity of the liquid crystal display device explaining Example 4 of this invention. It is sectional drawing which shows the structure of 1 pixel vicinity of the liquid crystal display device explaining Example 5 of this invention.

Explanation of symbols

SUB1 ... first substrate, SUB2 ... second substrate, SI ... silicon film, GI ... gate insulating layer, GT ... gate electrode, INS ... interlayer insulating layer, CH. ..Contact holes, BUP ... smooth irregularities, RT ... reflecting electrode (reflection film, inner diffuser), PAS ... passivation layer, OC ... flattening layer, TH ... through hole, CNT ... contact layer, PX ... pixel electrode, CT ... counter electrode (common electrode), CF ... color filter layer, IL ... CVD interlayer insulating film.

Claims (12)

A display device comprising: a first substrate having a reflective film on each pixel formed on the main surface or a part thereof; and a second substrate bonded to the first substrate with a predetermined gap,
The display device, wherein the reflective film is formed on a smooth uneven surface formed by reflowing a surface of an inorganic insulating film formed on a flat base.   The display device according to claim 1, wherein a surface of the inorganic insulating film excluding a portion where the reflective film is formed is a flat surface.   The display device according to claim 2, wherein the flat surface of the inorganic insulating film is light transmissive.   A protective film is formed to cover the inorganic insulating film on which the reflective film is formed, and a comb-like pixel electrode and a comb-like shape are formed on the surface of the surface insulating layer further formed on the protective film. The display device according to claim 3, wherein the counter electrodes are alternately meshed with each other.   5. The display device according to claim 4, wherein the surface insulating layer is a planarizing layer, and has a color filter layer on an inner surface of the second substrate.   The display device according to claim 5, wherein an opening for emitting light reflected by the reflective film to the outside of the second substrate is provided in a portion of the color filter layer facing the reflective film.   The display device according to claim 4, wherein the surface insulating layer is a color filter layer.   The display device according to claim 1, wherein liquid crystal is sealed between the first substrate and the second substrate. A first substrate having a reflective film on a part of each pixel formed on the main surface; and a second substrate in which liquid crystal is sealed and bonded between the first substrate with a predetermined gap. A display device,
The reflective film is formed on a smooth uneven surface formed by reflowing the surface of an inorganic insulating film formed on a flat base,
A transparent pixel electrode that is electrically connected to the reflective film is disposed on a flat surface of the surface of the inorganic insulating film excluding a portion where the reflective film of the inorganic insulating film is formed,
A display device comprising a counter electrode on an inner surface of the second substrate. A first substrate having a reflective film on a part of each pixel formed on the main surface; and a second substrate in which liquid crystal is sealed and bonded between the first substrate with a predetermined gap. A display device,
The reflective film is formed on a smooth uneven surface formed by reflowing the surface of the inorganic insulating film formed on the flat main surface of the first substrate,
The surface of the inorganic insulating film excluding the portion where the reflective film of the inorganic insulating film is formed has a transparent counter electrode electrically connected to the reflective film on a flat surface,
A display device, wherein a pixel electrode having a linear portion is arranged on a surface of an insulating film formed so as to cover the reflective film and a transparent counter electrode electrically connected to the reflective film. A method for manufacturing a display device, comprising: a first substrate having a reflective film on a part of each pixel formed on a main surface; and a second substrate bonded to the first substrate with a predetermined gap. ,
A photosensitive inorganic insulating film forming step of applying and drying a photosensitive inorganic insulating film on a flat surface of the main surface of the first substrate;
By exposing and drying the dried photosensitive inorganic insulating film with a half exposure mask, the photosensitive inorganic insulating film is digged into the photosensitive inorganic insulating film in a depth direction from the surface in accordance with the half exposure openings of the half exposure mask. Digging process to form,
A reflow process in which the plurality of digs are made to have a smooth uneven surface by reflow heating at a temperature lower than the transition temperature of the first substrate;
And a reflective film forming step of forming the reflective film on the smooth uneven surface obtained in the reflow step. The photosensitive inorganic insulating film is composed of polysilazane as a main component, and is a photosensitive polysilazane obtained by adding a photosensitive agent thereto.
The method for manufacturing a display device according to claim 11, wherein the reflow step performs the heating by applying excessive humidification to the photosensitive polysilazane.

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