JP2007149865A - Semiconductor device and method of manufacturing electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a highly reliable electronic apparatus and a highly reliable semiconductor device. <P>SOLUTION: The method of manufacturing an electronic apparatus includes a process of preparing a semiconductor device 1 including a semiconductor chip 10 in which a surface 15 having electrodes 14 formed thereon has a rectangular shape, a resin projection 20 arranged on an end region 18 of a short side 17 of the surface 15 of the semiconductor chip 10, and a wiring 30 having an electric connection portion 32 provided on the resin projection 20 and electrically connected to the electrodes 14; a process of preparing a wiring board 40 having a conductive portion 44; a process of mounting the semiconductor device 1 on the wiring board 40 and allowing the electric connection portion 32 to contact the conductive portion 44 to electrically connect them; and a process of cutting the wiring 30. The wiring 30 includes the electric connection portion 32; first and second extending portions 34, 36 and a led-out portion 38 led out from the first extending portion 34 and wired so as to reach the electrodes 14. The wiring 30 is cut on a boundary between the electric connection portion 32 and the second extending portion 36. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor device and a method for manufacturing an electronic device.

An electronic device in which a semiconductor device is mounted on a wiring board or the like is known. And a semiconductor device and a wiring board may expand and contract under the influence of the temperature change of the operating environment of an electronic device or the temperature change by a thermal cycle test. When the semiconductor device and the wiring board have different coefficients of thermal expansion, force may be applied to the wiring of the semiconductor device. In order to increase the reliability of the semiconductor device, it is preferable to reduce stress on the wiring and the like.
JP-A-2-272737

  An object of the present invention is to provide a highly reliable semiconductor device and a method for manufacturing a highly reliable electronic device.

(1) A method of manufacturing an electronic device according to the present invention includes:
An electrode is formed, a semiconductor chip in which the surface on which the electrode is formed has a rectangular shape, a resin protrusion disposed in an end region of a short side of the surface of the semiconductor chip, and an upper end portion of the resin protrusion A step of providing a semiconductor device including a wiring electrically connected to the electrode having an electrical connection portion provided;
Preparing a wiring board having a base substrate and a conductive portion formed on the base substrate;
Mounting the semiconductor device on the wiring board and bringing the electrical connection portion and the conductive portion into contact with each other to electrically connect;
Cutting the wiring on the resin protrusion;
Including
The wiring is led out from the electrical connecting portion, first and second extending portions extending to the electrical connecting portion, and the first extending portion to reach the electrode. A drawn-out portion that is routed,
The first extending portion is disposed closer to the center of the surface than the electrical connection portion,
The second extending portion is disposed outside the surface with respect to the electrical connection portion,
In the step of cutting the wiring, the wiring is cut at a boundary between the electrical connection portion and the second extending portion.

  According to the present invention, the wiring is cut after the semiconductor device is mounted on the wiring board. At this time, since the wiring is cut at the boundary between the electrical connection portion and the second extending portion, the electrical connection between the electrical connection portion and the electrode can be maintained. Moreover, the stress applied to the electrical connection portion, the first extension portion, and the lead-out portion can be reduced by cutting the wiring. That is, according to the present invention, a highly reliable electronic device can be efficiently manufactured.

(2) In this method of manufacturing an electronic device,
The electrical connection portion and the first and second extending portions may be arranged in a direction orthogonal to the short side.

(3) In this method of manufacturing an electronic device,
The electrical connection portion and the first and second extending portions may be arranged along an imaginary straight line that extends radially from a central region of the surface.

(4) A semiconductor device according to the present invention includes:
A plurality of electrodes formed, a semiconductor chip having a rectangular surface on which the electrodes are formed;
A resin protrusion provided on the surface of the semiconductor chip;
A plurality of wirings electrically connected to the plurality of electrodes, the plurality of wirings having a plurality of electrical connection portions provided on an upper end portion of the resin protrusion;
Including
Each of the wirings includes the electrical connection portion, an extension portion extended to the electrical connection portion, and a lead portion drawn from the extension portion so as to reach the electrode. Have
In the end region of the short side of the surface, all of the extending portions are disposed on the center side of the surface with respect to the electrical connection portion.

  According to the semiconductor device of the present invention, the electrical connection portion is electrically connected to the electrode via the extension portion and the lead portion. And the extension part is arrange | positioned rather than the electrical connection part at the center side of a surface. That is, according to the present invention, in the end region of the semiconductor chip, the disconnection of the wiring hardly occurs at the boundary between the electrical connection portion and the extension portion, and the electrical connection reliability between the electrical connection portion and the electrode is high. A semiconductor device can be provided.

(5) A semiconductor device according to the present invention includes:
A plurality of electrodes formed, a semiconductor chip having a rectangular surface on which the electrodes are formed;
A resin protrusion which is disposed in an end region of the short side of the surface of the semiconductor chip and has a shape extending along the short side;
A plurality of wirings electrically connected to the plurality of electrodes, the plurality of wirings having a plurality of electrical connection portions provided on an upper end portion of the resin protrusion;
Including
Each of the wirings includes the electrical connection portion, an extension portion extended to the electrical connection portion, and a lead portion drawn from the extension portion so as to reach the electrode. Have
The extending portion is disposed closer to the center of the surface than the electrical connection portion.

  According to the semiconductor device of the present invention, the electrical connection portion is electrically connected to the electrode via the extension portion and the lead portion. And the extension part is arrange | positioned rather than the electrical connection part at the center side of a surface. That is, according to the present invention, in the end region of the semiconductor chip, the disconnection of the wiring hardly occurs at the boundary between the electrical connection portion and the extension portion, and the electrical connection reliability between the electrical connection portion and the electrode is high. A semiconductor device can be provided.

  Embodiments to which the present invention is applied will be described below with reference to the drawings. However, the present invention is not limited to the following embodiments. Moreover, this invention includes what combined the following content freely.

  FIG. 1A to FIG. 4 are diagrams for explaining a method of manufacturing an electronic device according to an embodiment to which the present invention is applied.

  A method for manufacturing an electronic device according to this embodiment includes preparing a semiconductor device 1 shown in FIGS. 1 (A) to 1 (C). FIG. 1A is a top view of the semiconductor device 1. However, in FIG. 1A, the electrode 14 and the wiring 30 are omitted for explanation. FIG. 1B is a partially enlarged view of FIG. FIG. 1C is a partially enlarged view of a cross section taken along the line IC-IC in FIG.

  The semiconductor device 1 includes a semiconductor chip 10 as shown in FIGS. 1 (A) to 1 (C). The semiconductor chip 10 may be a silicon chip, for example. An integrated circuit 12 may be formed on the semiconductor chip 10 (see FIG. 1C). The configuration of the integrated circuit 12 is not particularly limited, and may include, for example, an active element such as a transistor or a passive element such as a resistor, a coil, or a capacitor.

  As shown in FIGS. 1B and 1C, the semiconductor chip 10 is formed with a plurality of electrodes 14. And the surface 15 in which the electrode 14 of the semiconductor chip 10 was formed makes a rectangle as shown to FIG. 1 (A). The surface 15 may be an active surface of the semiconductor chip 10. That is, the surface 15 of the semiconductor chip 10 may be a surface on which the integrated circuit 12 is formed. The electrode 14 may be formed only on the peripheral edge, avoiding the central portion of the surface 15. Alternatively, the electrode 14 may be formed on the surface 15 in an area array shape (in a region including the central portion). At this time, the electrodes may be arranged in a lattice pattern in a plurality of rows and a plurality of columns, or may be arranged randomly.

The electrode 14 may be electrically connected to the integrated circuit 12. Alternatively, a conductor that is not electrically connected to the integrated circuit 12 may be referred to as the electrode 14. The electrode 14 may be a part of the internal wiring of the semiconductor chip. The electrode 14 may be formed of a metal such as aluminum or copper. As shown in FIG. 1C, a passivation film 16 may be formed on the surface 15 of the semiconductor chip 10, and at this time, the electrode 14 may be an exposed region from the passivation film 16. The passivation film may be an inorganic insulating film such as SiO ₂ or SiN. Alternatively, the passivation film 16 may be an organic insulating film such as a polyimide resin.

  As shown in FIGS. 1A to 1C, the semiconductor device 1 includes a resin protrusion 20. The resin protrusion 20 is formed on the semiconductor chip 10. The resin protrusion 20 may be formed on the passivation film 16. The resin protrusion 20 may be formed so as to avoid (expose) the electrode 14.

  The resin protrusion 20 is formed on the surface (surface 15) on which the electrode 14 of the semiconductor chip 10 is formed. The resin protrusion 20 may be formed in the end region 18 of the short side 17 of the surface 15. The end region 18 of the short side 17 may refer to a region around the short side 17 on the surface 15. For example, the end region 18 of the short side 17 may indicate a square region in the surface 15 with the short side 17 as one side. Alternatively, the end region 18 of the short side 17 may be a region having the same width as the thickness of the semiconductor chip 10 from the short side 17 of the surface 15. Alternatively, the end region 18 of the short side 17 may indicate a region on the surface 15 outside the integrated circuit 12 or the electrode 14. Alternatively, the end region 18 of the short side 17 may refer to a region outside the resin protrusion 22 (described later) on the surface 15.

  As shown in FIGS. 1A and 1B, the resin protrusion 20 may have a shape extending along the short side 17 in the end region 18 of the short side 17 of the surface 15. In the semiconductor device 1, only one resin protrusion 20 may be formed in the end region 18. However, a plurality of resin protrusions 20 may be formed in the end region 18. According to this, since it is possible to widen a region where an electrical connection portion 32 described later can be formed, a large number of connection points can be secured without increasing the outer shape of the semiconductor chip 10, and the electrical connection portion can be secured. 32 The degree of freedom of arrangement can be increased.

  The semiconductor device 1 may include other resin protrusions 22 formed on the surface 15 of the semiconductor chip 10 as shown in FIGS. 1 (A) and 1 (B). The resin protrusion 22 may have a shape extending along the long side 19 of the surface 15. As shown in FIG. 1, only one resin protrusion 22 may be formed along the long side 19 of the surface 15. However, a plurality of resin protrusions may be formed along the long side 19 of the surface 15 (not shown).

  The material of the resin protrusions 20 and 22 is not particularly limited, and any known material may be applied. For example, the resin protrusions 20 and 22 are formed of a resin such as polyimide resin, silicone-modified polyimide resin, epoxy resin, silicone-modified epoxy resin, benzocyclobutene (BCB), polybenzoxazole (PBO), or phenol resin. May be.

  As shown in FIGS. 1B and 1C, the semiconductor device 1 includes a wiring 30. The wiring 30 is electrically connected to the electrode 14. The wiring 30 has an electrical connection portion 32 provided at the upper end portion of the resin protrusion 20. The electrical connection portion 32 is a portion used as an external terminal. The wiring 30 also has first and second extending portions 34 and 36 extending to the electrical connection portion 32. The first and second extending portions 34 and 36 may be formed only on the resin protrusion 22 (the base end portion of the resin protrusion 22). That is, the first and second extending portions 34 and 36 may refer to a region of the wiring 30 that overlaps the resin protrusion 20. However, the first and second extending portions 34 and 36 may be formed so as to reach the semiconductor chip 10 (surface 15). In the semiconductor device 1, the first extending portion 34 is disposed closer to the center of the surface 15 than the electrical connection portion 32. Further, the second extending portion 36 is disposed outside the surface 15 with respect to the electrical connecting portion 32. That is, the first and second extending portions 34 and 36 may be disposed on both sides of the electrical connection portion 32. At this time, the electrical connection portion 32 and the first and second extending portions 34 and 36 may be arranged in a direction orthogonal to the short side 17 as shown in FIG. The wiring 30 has a lead portion 38 that is drawn from the first extending portion 34. The lead portion 38 may be drawn out from the first extending portion 34 so as to reach the electrode 14. That is, the electrical connection portion 32 may be electrically connected to the electrode 14 via the first extension portion 34 and the lead portion 38.

  The structure and material of the wiring 30 are not particularly limited. The wiring 30 may be formed of a single layer. Alternatively, the wiring 30 may be formed of a plurality of layers. At this time, the wiring 30 may include a first layer formed of titanium tungsten and a second layer formed of gold (not shown).

  The method for manufacturing an electronic device according to the present embodiment includes preparing a wiring board 40 (see FIGS. 2A and 2B). The wiring substrate 40 may include a base substrate 42 and a conductive portion 44 formed on the base substrate 42. The material of the base substrate 42 is not particularly limited, and may be any organic or inorganic material, or may be composed of a composite structure thereof. As the base substrate 42, a substrate formed of an inorganic material may be used. At this time, the base substrate 42 may be a ceramic substrate or a glass substrate. When the base substrate 42 is a glass substrate, the wiring substrate 40 may be a part of an electro-optical panel (liquid crystal panel, electroluminescence panel, etc.). Further, the conductive portion 44 may be a part of the wiring pattern formed on the base substrate 42. The conductive portion 44 may be formed of a metal film such as ITO (Indium Tin Oxide), Cr, or Al, a metal compound film, or a composite film thereof. At this time, the conductive portion 44 may be electrically connected to an electrode (scanning electrode, signal electrode, counter electrode, etc.) that drives the liquid crystal. Alternatively, the base substrate 42 may be a substrate or film made of polyethylene terephthalate (PET). Alternatively, a flexible substrate made of polyimide resin may be used as the base substrate 42. As the flexible substrate, a tape used in FPC (Flexible Printed Circuit) or TAB (Tape Automated Bonding) technology may be used. At this time, the conductive portion 44 is formed by stacking any one of, for example, copper (Cu), chromium (Cr), titanium (Ti), nickel (Ni), and titanium tungsten (Ti-W). Also good.

  The manufacturing method of the electronic device according to the present embodiment includes mounting the semiconductor device 1 on the wiring board 40. The semiconductor device 1 is mounted on the wiring board 40 and the electrical connection portion 32 and the conductive portion 44 are brought into contact with each other to be electrically connected. Hereinafter, as shown in FIGS. 2A and 2B, a process of mounting the semiconductor device 1 on the wiring board 40 will be described.

  First, as shown in FIG. 2A, the semiconductor device 1 is arranged on the wiring substrate 40, and the electrical connection portion 32 (resin protrusion 20) of the semiconductor device 1 and the conductive portion 44 of the wiring substrate 40 face each other. Align so that

  At this time, the semiconductor device 1 may be held by a jig (bonding tool) (not shown). A heater may be built in the jig, and thereby the semiconductor device 1 (electrical connection portion 32) may be heated. By heating the semiconductor device 1, the electrical connection portion 32 is heated, and the electrical connection portion 32 and the conductive portion 44 can be reliably electrically connected.

  Note that an adhesive (not shown) may be provided between the semiconductor device 1 and the wiring board 40. For example, a film-like adhesive may be used as the adhesive. Alternatively, a paste adhesive may be used as the adhesive. The adhesive may be an insulating adhesive. The adhesive may be a resin adhesive.

  Thereafter, as shown in FIG. 2B, the semiconductor device 1 and the wiring substrate 40 are brought close to each other, and the electrical connection portion 32 and the conductive portion 44 are brought into contact with each other. Thereby, the electrical connection portion 32 and the conductive portion 44 are electrically connected. That is, the portion of the wiring 30 that contacts the conductive portion 44 may be referred to as the electrical connection portion 32. In this step, the resin protrusion 20 may be crushed by the semiconductor chip 10 and the wiring substrate 40 to elastically deform the resin protrusion 20. Thereby, since the electrical connection part 32 and the electroconductive part 44 can be pressed by the elastic force of the resin protrusion 20, an electronic device with high electrical connection reliability can be manufactured.

  Further, an adhesive layer (not shown) may be formed between the semiconductor device 1 and the wiring board 40. The distance between the semiconductor chip 10 and the wiring board 40 may be maintained by the adhesive layer. That is, the state in which the resin protrusion 20 is elastically deformed may be maintained by the adhesive layer. For example, by forming the adhesive layer in a state where the resin protrusion 20 is elastically deformed, the state where the resin protrusion 20 is elastically deformed can be maintained.

  As shown in FIG. 3, the method for manufacturing the electronic device according to the present embodiment includes cutting the wiring 30 on the resin protrusion 20. The wiring 30 is cut at the boundary between the electrical connection portion 32 and the second extension portion 36. The wiring 30 may be cut using a difference in expansion and contraction between the semiconductor chip 10 and the wiring substrate 40 (base substrate 42).

  The dimensions of the semiconductor device 1 and the wiring board 40 may be changed during the mounting process or after the mounting process. For example, as described above, in the process of mounting the semiconductor device 1 on the wiring substrate 40, after the semiconductor device 1 is mounted on the wiring substrate 40 and the supply of heat by the jig is stopped, the semiconductor device 1 and the wiring substrate 40 cools and shrinks, reducing external dimensions. Alternatively, the dimensions of the semiconductor device 1 and the wiring board 40 change when a change in the operating environment after mounting or a thermal cycle test for inspection is performed.

  In particular, since the semiconductor chip 10 has a rectangular shape, dimensional changes accumulate toward the end region 18 of the short side 17. Therefore, the size of the surface 15 of the semiconductor chip 10 is greatly changed in the end region 18 of the short side 17 as compared with the central region. In the semiconductor chip 10, the dimensional change amount in the direction along the long side 19 is larger in the end region 18 of the short side 17 than the dimensional change amount in the direction along the short side 17. . Therefore, a large force can be applied to the resin protrusion 20 (wiring 30) disposed in the end region 18 of the short side 17 of the semiconductor chip 10 in the direction intersecting the short side 17 of the semiconductor chip 10.

  The electrical connection portion 32 of the wiring 30 is in contact with the conductive portion 44. Therefore, the position of the electrical connection portion 32 changes according to the expansion and contraction of the wiring board 40. In contrast, the positions of the first and second extending portions 34 and 36 change in accordance with the expansion and contraction of the semiconductor device 1 (semiconductor chip 10). Therefore, a large force is applied to the boundary between the electrical connection portion 32 and the first and second extending portions 34 and 36. In particular, a large force is concentrated on the electrical connection portion 32 and the second extending portion 36. This is because the expansion / contraction amount increases toward the outside of the semiconductor chip 10 (surface 15), and the positional deviation between the semiconductor chip 10 and the wiring substrate 40 increases. In the electronic device manufacturing method according to the present embodiment, this force may be used to cut the wiring 30 at the boundary between the electrical connection portion 32 and the second extension portion 36. That is, in the electronic device manufacturing method according to the present embodiment, the wiring 30 may be cut using the difference in expansion and contraction between the semiconductor chip 10 and the wiring substrate 40 (base substrate 42).

  The electronic device 1000 shown in FIG. 4 may be manufactured through the above steps. The electronic device 1000 may be a display device. The display device may be, for example, a liquid crystal display device or an EL (Electrical Luminescence) display device. The semiconductor device 1 (semiconductor chip 10) may be a driver IC that controls the display device.

  According to the present invention, as described above, the wiring 30 is cut at the boundary between the electrical connection portion 32 and the second extending portion 36. Thereby, the stress concerning the wiring 30 (the electrical connection part 32, the 1st extension part 34, and the drawer | drawing-out part 38) can be made small. Therefore, the force applied to the boundary between the electrical connection portion 32 and the first extension portion 34 can be reduced. In other words, according to the present invention, it is possible to provide a highly reliable electronic device in which wiring disconnection hardly occurs between the electrical connection portion 32 and the electrode 14.

  Further, according to the present invention, the wiring 30 is cut after the semiconductor device 1 is mounted on the wiring board 40. Therefore, the alignment between the wiring 30 and the conductive portion 44 can be easily performed, and the electronic device can be manufactured efficiently.

  In the semiconductor device 1, the electrical connection portion 32 is electrically connected to the electrode 14 via the first extension portion 34 and the lead portion 38. Therefore, even if the wiring 30 is cut at the boundary between the electrical connection portion 32 and the second extension portion 36, the electrical connection between the electrical connection portion 32 and the electrode 14 can be maintained. That is, according to the semiconductor device 1, electrical connection between the electrode 14 and the electrical connection portion 32 is ensured even when the wiring 30 is disconnected in the end region 18 of the short side 17 of the semiconductor chip 10. Therefore, a highly reliable semiconductor device capable of achieving the above can be provided.

  Note that the electronic device manufacturing method according to the present embodiment may further include a step of removing the second extending portion 36. According to this, since it is possible to prevent the occurrence of an electrical short due to the second extending portion 36, it is possible to manufacture a more reliable electronic device.

(Modification)
FIG. 5 is a diagram for explaining a modification of the embodiment to which the present invention is applied. The method for manufacturing an electronic apparatus according to this modification includes preparing the semiconductor device 2 shown in FIG. Hereinafter, the configuration of the semiconductor device 2 will be described.

  As shown in FIG. 5, the semiconductor device 2 has a plurality of resin protrusions 25. The resin protrusion 25 is formed in the end region 18 on the short side of the semiconductor chip 10. The semiconductor device 2 has a plurality of wirings 50. The wiring 50 has an electrical connection portion 52 disposed on the resin protrusion 25. The wiring 50 also has first and second extending portions 54 and 56 extending from the electrical connection portion 52. In the wiring 50, the electrical connection portion 52 and the first and second extending portions 54 and 56 are arranged along the virtual straight line 100. Here, the virtual straight line 100 is a straight line extending radially from the central region of the surface 15 of the semiconductor chip 10. The wiring 50 has a lead portion 58. The lead-out portion 58 is drawn out from the first extending portion 54 and routed to reach the electrode 14.

  The semiconductor chip 10 may expand and contract radially from the central region under the influence of temperature change. According to this modification, when the semiconductor chip 10 expands and contracts radially from the central region, the wiring 50 is easily cut at the boundary between the electrical connection portion 52 and the second extending portion 56. Therefore, even when the semiconductor device 2 is used, a highly reliable electronic device can be manufactured.

  In the semiconductor device 2, all of the first extending portions 54 may be disposed closer to the center of the surface 15 than the electrical connection portion 52 in the end region 18 of the short side 17 of the semiconductor chip 10. . According to this, since it becomes possible to maintain the electrical connection between the electrode 14 and the electrical connection portion 52 regardless of the occurrence of disconnection in any of the wirings 50, it is possible to provide a highly reliable electronic device. Can do.

  In addition, this invention is not limited to embodiment mentioned above, A various deformation | transformation is possible. For example, the present invention includes substantially the same configuration as the configuration described in the embodiment (for example, a configuration having the same function, method, and result, or a configuration having the same purpose and effect). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

1A to 1C are diagrams for explaining a method of manufacturing an electronic device according to an embodiment to which the invention is applied. 2A and 2B are diagrams for explaining a method of manufacturing an electronic device according to an embodiment to which the invention is applied. FIG. 3 is a diagram for explaining a method of manufacturing an electronic apparatus according to an embodiment to which the present invention is applied. FIG. 4 is a diagram for explaining a method of manufacturing an electronic apparatus according to an embodiment to which the present invention is applied. FIG. 5 is a diagram for explaining a method for manufacturing an electronic apparatus according to a modification of the embodiment to which the present invention is applied.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 10 ... Semiconductor chip, 12 ... Integrated circuit, 14 ... Electrode, 15 ... Surface, 16 ... Passivation film, 17 ... Short side, 18 ... End region, 19 ... Long side, 20 ... Resin protrusion, 22 ... resin protrusion, 30 ... wiring, 32 ... electrical connection part, 34 ... first extension part, 36 ... second extension part, 38 ... drawer part, 40 ... wiring board, 42 ... base board, 44 ... Conductive part 50 ... wiring 52 ... electrical connection part 54 ... first extension part 56 ... second extension part 58 ... drawing part

Claims (5)

An electrode is formed, a semiconductor chip in which the surface on which the electrode is formed has a rectangular shape, a resin protrusion disposed in an end region of a short side of the surface of the semiconductor chip, and an upper end portion of the resin protrusion A step of providing a semiconductor device including a wiring electrically connected to the electrode having an electrical connection portion provided;
Preparing a wiring board having a base substrate and a conductive portion formed on the base substrate;
Mounting the semiconductor device on the wiring board and bringing the electrical connection portion and the conductive portion into contact with each other to electrically connect;
Cutting the wiring on the resin protrusion;
Including
The wiring is led out from the electrical connecting portion, first and second extending portions extending to the electrical connecting portion, and the first extending portion to reach the electrode. A drawn-out portion that is routed,
The first extending portion is disposed closer to the center of the surface than the electrical connection portion,
The second extending portion is disposed outside the surface with respect to the electrical connection portion,
A method of manufacturing an electronic device, wherein the wiring is cut at a boundary between the electrical connection portion and the second extending portion in the step of cutting the wiring. In the manufacturing method of the electronic device of Claim 1,
The method for manufacturing an electronic device, wherein the electrical connection portion and the first and second extending portions are arranged in a direction orthogonal to the short side. In the manufacturing method of the electronic device of Claim 1,
The method for manufacturing an electronic device, wherein the electrical connection portion and the first and second extending portions are arranged along a virtual straight line extending radially from a central region of the surface. A plurality of electrodes formed, a semiconductor chip having a rectangular surface on which the electrodes are formed;
A resin protrusion provided on the surface of the semiconductor chip;
A plurality of wirings electrically connected to the plurality of electrodes, the plurality of wirings having a plurality of electrical connection portions provided on an upper end portion of the resin protrusion;
Including
Each of the wirings includes the electrical connection portion, an extension portion extended to the electrical connection portion, and a lead portion drawn from the extension portion so as to reach the electrode. Have
In the end region of the short side of the surface, all the extending portions are arranged closer to the center side of the surface than the electrical connection portion. A plurality of electrodes formed, a semiconductor chip having a rectangular surface on which the electrodes are formed;
A resin protrusion which is disposed in an end region of the short side of the surface of the semiconductor chip and has a shape extending along the short side;
A plurality of wirings electrically connected to the plurality of electrodes, the plurality of wirings having a plurality of electrical connection portions provided on an upper end portion of the resin protrusion;
Including
Each of the wirings includes the electrical connection portion, an extension portion extended to the electrical connection portion, and a lead portion drawn from the extension portion so as to reach the electrode. Have
The extending portion is a semiconductor device that is disposed closer to the center of the surface than the electrical connection portion.

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