JP2007147573A - Manufacturing method of thermal infrared detecting element, and manufacturing method of array elements - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method capable of stably manufacturing thermal infrared detecting elements and array elements, even for a structure that is simpler than those of prior art. <P>SOLUTION: When a concave portion 8 is formed in a substrate 7 by an etching gas, it is necessary that an etching stopper be formed in the substrate 7, because etching of silicon is performed isotropally. In the present invention, however, since wet crystalline anisotropy treatment is performed, etching stoppers become unnecessary. Moreover, by adding a fixing member for supporting an infrared absorber 2 prior to the treatment, possible sticking during the drying period after the wet treatment can be prevented. Finally, the fixing member added is removed by dry processing. Accordingly, thermal infrared detecting elements 1 can be manufactured stably. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a thermal infrared detection element and a method for manufacturing an array element including a plurality of thermal infrared detection elements in an array. In particular, the present invention relates to a method for manufacturing a thermal infrared detection element and a method for manufacturing an array element, in which pixels can be easily and stably manufactured.

  A thermal infrared detection element is an element that absorbs infrared rays to increase the temperature when the infrared rays are irradiated, and detects the temperature change. In the thermal infrared detection element, the temperature detection unit is provided above a recess formed in, for example, a semiconductor substrate. As a result, the temperature detection unit is less susceptible to the influence of ambient heat and can detect temperature changes satisfactorily.

  For example, Japanese Patent Laying-Open No. 2002-299596 (Patent Document 1) discloses a method for manufacturing a thermal infrared detection element having such a configuration. In this manufacturing method, a hollow portion is formed by introducing an etching gas into the semiconductor substrate from only one etching hole. The etching shape is deepest immediately below the joining column where the etching hole is formed and becomes shallower toward the end portion, so that it is not necessary to form a deep etching stopper.

Japanese Patent Laying-Open No. 2003-139791 (Patent Document 2) discloses a manufacturing method of a microstructure (capacitive sensor) in which a fixed electrode and a movable electrode are formed on a substrate. In this manufacturing method, the resist member formed on one surface of the substrate is removed leaving only the support portion for fixing the movable electrode. Thereby, it is possible to prevent the movable electrode from sticking (adhering) to the peripheral portion.
JP 2002-299596 A (page 7, lines 15 to 27 and FIG. 6) Japanese Patent Laying-Open No. 2003-139791 (page 5, lines 8 to 24 and FIG. 2A)

  In the method for manufacturing a thermal infrared detection element disclosed in Japanese Patent Application Laid-Open No. 2002-299596 (Patent Document 1), the main steps can be realized by using a semiconductor manufacturing technique that is currently widely used. Further, according to this manufacturing method, sticking does not occur even when the temperature detecting element is finally released from the substrate, so that the thermal infrared detecting element can be manufactured stably.

  Sticking is caused by a wet processing method (a processing method using wet etching). When the wet processing method is used, in the final drying step, the pixel and the substrate are easily mechanically contacted by the surface tension of the remaining liquid. This tends to cause defects such as structural defects. Although the manufacturing method disclosed in Japanese Patent Laid-Open No. 2002-299596 (Patent Document 1) can prevent such a problem, a step of forming an etching stopper in the semiconductor is required.

  On the other hand, when a recess is formed in a semiconductor by a wet processing method, it is necessary to establish an effective method for performing drying while suppressing the occurrence of sticking. A useful technique is, for example, a supercritical drying method.

In the supercritical drying method, the liquid remaining in the concave portion is replaced with carbon dioxide (CO ₂ ) in a supercritical state (a state generated at a high temperature and a high pressure, neither a liquid phase nor a gas phase). Since carbon dioxide in a supercritical state has a small surface tension, the temperature detection unit can be prevented from contacting the substrate. Therefore, sticking can be avoided. However, special and large equipment is required to use the supercritical drying method.

  As another useful technique, there has been proposed a method of embedding some material in the gap before performing drying and performing sublimation drying or dry plasma etching. When sublimation drying is used, first, an organic material is embedded in the gap as a sublimation material. By the sublimation of the material, sticking is prevented because the force for sticking the temperature detecting element to the substrate does not occur. In the case of dry plasma etching, after a solution-like organic material is embedded and solidified, the organic material is removed by plasma processing. Also in this case, the same effect as the sublimation drying method can be obtained. However, although these techniques are effective techniques for preventing sticking, they are quite special techniques compared to general-purpose semiconductor manufacturing techniques.

  In addition, when forming recesses of a predetermined size by wet processing, based on the principle of crystal anisotropic processing, the structure of the element and the manufacturing process so that a predetermined portion of the substrate surface is immersed in the etching solution. It is necessary to design. The recess formed in the semiconductor substrate (particularly a silicon substrate) is performed by crystal anisotropic processing with an alkaline solution such as a potassium hydroxide solution. The element structure disclosed in Japanese Patent Laid-Open No. 2002-299596 (Patent Document 1) cannot perform desired wet processing.

  The present invention solves the above-described problems, and an object of the present invention is to provide a manufacturing method that can stably produce a thermal infrared detection element and an array element even with a simpler structure than the conventional one. is there.

  In summary, the present invention is a method for manufacturing a thermal infrared detection element. The thermal infrared detecting element is connected to the semiconductor substrate having a recess, the temperature detection unit supported in the air above the recess by being connected to the semiconductor substrate via the support leg, and the temperature detection unit. An infrared absorber that spreads in a plane parallel to the main surface of the semiconductor substrate is provided so as to cover at least the temperature detection unit. The manufacturing method includes a step of forming a temperature detector and a support leg on the main surface, a step of forming an infrared absorber, and a step of forming at least one fixing member for temporarily supporting the infrared absorber. And removing the lower part of the temperature detecting part and the lower part of the supporting leg of the semiconductor substrate by using wet processing to form a recess, and removing the fixing member.

  According to the present invention, prior to the crystal anisotropic processing by wet processing, by holding the infrared absorber with the fixing member, the infrared absorber and the temperature detection unit can be stabilized even if the concave portion is formed on the substrate. Can be released from the board.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same reference numerals indicate the same or corresponding parts.

[Embodiment 1]
FIG. 1 is a plan view of a thermal infrared detection element manufactured by the manufacturing method of the first embodiment.

2 is a cross-sectional view taken along line II-II in FIG.
With reference to FIG. 1 and FIG. 2, the thermal-type infrared detection element in Embodiment 1 is demonstrated. The thermal infrared detection element 1 includes a substrate 7. The substrate 7 is specifically a silicon substrate. The substrate 7 has a recess 8.

  The thermal infrared detection element 1 further includes an infrared absorber 2, a support leg 3, a temperature detection unit 4, and a metal wiring 6. The side surface of the temperature detection unit 4 is connected to the support leg 3. The temperature detector 4 is supported in the air above the recess 8 by being connected to the substrate 7 via the support legs 3.

  The infrared absorber 2 is an element that absorbs infrared rays incident on the thermal infrared detection element 1, and is connected to the temperature detection unit 4. Further, the infrared absorber 2 spreads in a planar shape in parallel with the main surface of the substrate 7 so as to cover at least the temperature detector 4. In FIG. 2, the infrared absorber 2 is formed so as to cover the temperature detection unit 4 and the support leg 3. By providing the infrared absorber 2, the thermal infrared detector 1 can increase the infrared absorption efficiency. Moreover, the infrared absorption efficiency can be increased as the area of the infrared absorber 2 is larger.

  The infrared absorber 2 includes a thin metal film that is a functional film that absorbs infrared rays, and a dielectric film (structure) that supports the film. Although the distinction between the thin film metal film and the dielectric film is not shown in detail in the drawing, for example, the infrared absorber 2 has a three-layer structure of silicon oxide film / thin film metal film / silicon oxide film.

  The support leg 3 includes a metal film 3A as a wiring and a dielectric film 3B (structure) that supports the metal film 3A. For example, the support leg 3 has a three-layer structure of silicon oxide film / metal film / silicon oxide film.

  Infrared light incident on the thermal infrared detection element 1 is absorbed by the infrared absorber 2. Thereby, the temperature of the infrared absorber 2 and the temperature detection part 4 rises. For example, a diode-type temperature sensor is incorporated in the temperature detection unit 4. Therefore, the infrared rays incident on the thermal infrared detection element 1 are converted into electric signals by the temperature sensor. It is obvious that a semiconductor element or a metal film element can be applied as the temperature sensor in addition to the diode by utilizing the temperature characteristics of the element.

  The temperature sensor in the temperature detection unit 4 is connected to the metal wiring 6 by the metal film 3 </ b> A inside the support leg 3. The metal wiring 6 transmits a temperature sensor signal to a peripheral circuit (not shown). The metal wiring 6 is made of, for example, aluminum. An insulating film is provided around the metal wiring 6.

  The recess 8 is formed by crystal anisotropic processing using an alkaline solution. By providing the recess 8, the incident infrared light is efficiently converted into temperature. The recess 8 is formed by wet processing using wet etching.

  By using a silicon substrate having an orientation flat surface orientation of <110>, the etching rate decreases as the <111> crystal plane is exposed to the etching surface, and so-called anisotropic etching occurs. Thereby, it can prevent that the recessed part 8 connects with adjacent elements. Therefore, an etching cross section having the shape shown in FIG. 2 can be formed.

  Next, the manufacturing process of the thermal infrared detection element of Embodiment 1 will be described. First, the temperature detector 4 and the support leg 3 are formed on the main surface of the substrate 7.

  FIG. 3 is a plan view at a stage where the temperature detection unit 4 and the support leg 3 are manufactured in the manufacturing process of the thermal infrared detection element 1.

4 is a cross-sectional view taken along line IV-IV in FIG.
Referring to FIGS. 3 and 4, metal wirings 6 are formed in a lattice shape, and their intersections are connected via an electrically conductive layer (not shown). This electrically conductive layer is provided in a metal wiring layer different from the metal wiring 6 shown in FIGS. The metal film 3A of the support leg 3 is connected to the metal wiring 6 provided in the lattice shape.

  Next, the infrared absorber 2 is formed above the temperature detector 4. Hereinafter, the manufacturing process of the infrared absorber 2 will be described in order with reference to FIGS.

FIG. 5 is a cross-sectional view at a first stage in the manufacturing process of the infrared absorber 2.
Referring to FIG. 5, sacrificial layer 20 is formed on support leg 3, temperature detection unit 4, and metal wiring 6. The sacrificial layer 20 has performance (for example, etching resistance, temperature resistance, etc.) that can withstand subsequent manufacturing processes, and for example, a photoresist having high heat resistance can be applied. More specifically, for example, a polyimide resin or the like can be applied to the sacrificial layer 20.

  As shown in FIG. 5, an opening 20 </ b> A that reaches the surface of the temperature detection unit 4 is formed in the sacrificial layer 20. When the sacrificial layer 20 is a photoresist, the opening 20A is formed by a lithography process.

FIG. 6 is a cross-sectional view at a second stage in the manufacturing process of the infrared absorber 2.
Referring to FIG. 6, infrared absorber 2 is formed on sacrificial layer 20 so as to close opening 20 </ b> A and to cover at least the temperature detection unit. Thereby, the infrared absorber 2 is connected to the temperature detector 4.

FIG. 7 is a cross-sectional view at a third stage in the manufacturing process of the infrared absorber 2.
Referring to FIG. 7, sacrificial layer 20 is removed by dry processing (dry etching), and infrared absorber 2 is released.

  Next, the concave portion 8 is formed in the substrate 7 below the temperature detecting portion 4 using a crystal anisotropic processing technique. FIG. 8 is a plan view at a first stage in the process of forming the recess 8.

9 is a cross-sectional view taken along line IX-IX in FIG.
With reference to FIGS. 8 and 9, a fixing member 22 for fixing the infrared absorber 2 to the substrate 7 is formed. The fixing member 22 can prevent the infrared absorber 2 from coming into contact with the substrate 7 or the support leg 3 (sticking occurs) during wet processing.

  The fixing member 22 is formed at a position that does not interfere with wet processing. Thereby, the recessed part 8 of a predetermined magnitude | size can be produced stably.

FIG. 10 is a diagram showing a portion where the crystal anisotropic processing proceeds smoothly in the substrate 7.
Referring to FIG. 10, crystal anisotropy processing proceeds smoothly in region 7 </ b> A that is a corner portion of support leg 3 and temperature detection unit 4. As a result, the recesses 8 surrounded by four surfaces substantially equal to the <111> surface are formed, so that the recesses 8 having a predetermined size can be stably produced. Further, the size of the recess 8 can be controlled without forming an etching stopper.

  For example, a negative type photoresist can be used as the fixing member 22. The infrared absorber 2 is a translucent film in terms of its function, and has transparency to ultraviolet light used in a normal lithography process. Therefore, for example, by masking a region other than the fixing member 22 shown in FIG. 8 during exposure, the pattern of the fixing member shown in FIGS. 8 and 9 can be transferred to the resist. Therefore, the fixing member 22 can be easily formed. A negative type photoresist can be easily obtained.

FIG. 11 is a cross-sectional view at the second stage in the process of forming the recess 8.
Referring to FIG. 11, crystal anisotropic processing is performed in a state where infrared absorber 2 is supported by fixing member 22.

  Since the fixing member 22 is immersed in a solution used for crystal anisotropic processing, it is necessary to have resistance to this solution. For example, when a recess is formed in the substrate 7 using a silicon oxide film provided on the surface of the substrate 7 as a sacrificial layer, processing is performed using hydrofluoric acid. Ordinary photoresist resins are resistant to this solution. However, photoresists that are resistant to alkaline solutions are limited. Therefore, in the first embodiment, a chemically amplified negative resist is used for the fixing member 22. The fixing member 22 can be heat-cured after pattern formation to ensure resistance to an alkaline solution.

  In the wet process (formation of the concave portion 8 and washing with water), no sticking occurs because the infrared absorber 2 is not released by the fixing member 22. In addition, a well-known alkaline solution such as a potassium hydroxide (KOH) solution or a silicon-containing tetramethylammonium hydroxide (TMAH) solution can be applied to the crystal anisotropic processing.

  Thereafter, the fixing member 22 is removed by dry processing (dry etching) using plasma, and the structure shown in FIG. 2 is completed. The gas used for plasma processing may be oxygen gas or hydrogen gas. By configuring the fixing member 22 with a photoresist, that is, an organic material, a conventional dry etching technique can be easily applied in the manufacture of a thermal infrared detection element.

  When the recess 8 is formed in the substrate 7 by the etching gas, silicon is isotropically etched, so that an etching stopper needs to be formed in the substrate 7. On the other hand, in this embodiment, an etching stopper is not required because wet crystal anisotropic processing is performed. Further, by adding a member that supports the infrared absorber 2 prior to processing, sticking that may occur during drying after wet processing can be prevented. The added fixing member is finally removed by dry processing. Thereby, the thermal infrared detecting element 1 can be stably produced. Therefore, it is possible to provide a manufacturing method that is simpler than the prior art and that enables stable production of a thermal infrared detection element and an array element.

  In FIG. 8, the two fixing members 22 are formed so as to overlap each of two opposing sides in the plate-like portion of the infrared absorber 2. However, the fixing member 22 may have a shape other than that shown in FIG. 8 as long as the infrared absorber 2 can be fixed to the substrate 7 and the solution can be introduced into a desired region of the substrate 7.

FIG. 12 is a diagram illustrating another example of the fixing member 22.
Referring to FIG. 12, the four fixing members 22 are formed so as to cover the four end portions 2 </ b> A to 2 </ b> D of the infrared absorber 2.

  The thermal infrared detection element manufactured by the manufacturing method of the present embodiment has a heat insulating property on the order of 10 MK (mega Kelvin) / W, and releases the temperature detection unit from the substrate by dry processing. In the same manner as the infrared detection element manufactured using the above, a uniform response to the incident infrared light can be obtained.

  In the case of wet processing, it is necessary to perform rinsing with water after forming the recesses on the substrate. According to the prior art, the fixing member 22 is not formed. Therefore, special equipment (for example, an apparatus for performing supercritical drying) is required to prevent sticking during drying. According to the manufacturing method of the present embodiment, it is possible to stably produce an infrared detection element without using special equipment. That is, according to the manufacturing method of the present embodiment, industrial significance is increased.

  As described above, according to the first embodiment, in the method for manufacturing a thermal infrared detection element, the infrared absorber is fixed to the fixing member in advance before the concave portion is formed in the lower part of the pixel (temperature detection unit and infrared absorber). To fix. Thereby, even if the concave portion is formed by wet processing, sticking can be prevented, so that the thermal infrared detection element can be stably formed.

[Embodiment 2]
The second embodiment can reduce the occurrence of sticking as compared with the first embodiment.

  Sticking during substrate drying may occur at various locations depending on the structure of the device. Sticking occurs because the suction force between the structures caused by the surface tension of the liquid remaining at the time of drying is stronger than the force for maintaining the shape of the structure itself. If it demonstrates concretely, the problem that an infrared absorber will contact a board | substrate will generate | occur | produce when an infrared absorber falls. Further, if the support leg is miniaturized in order to improve the heat insulation of the support leg 3 in order to improve the performance, the rigidity of the support leg is lowered. In this case, there is a possibility that the support leg and the temperature detection unit come into contact with each other during drying.

  Hereinafter, the manufacturing method of Embodiment 2 will be described in detail. However, since the process of forming temperature detection unit 4 and support leg 3 is the same as in the first embodiment, the following description will not be repeated.

FIG. 13 is a plan view showing a state in which an infrared absorber is formed.
Referring to FIG. 13, the infrared absorber 2 is provided with openings 31 and 32. The openings 31 and 32 are provided on the support legs 3 when viewed from the direction perpendicular to the main surface of the substrate 7.

FIG. 14 is a plan view showing a state in which the fixing member is formed.
Referring to FIG. 14, fixing member 22 is formed to cover two opposing sides of infrared absorber 2, and fixing member 22 </ b> A is formed to cover openings 31 and 32.

  FIG. 15 is a plan view for easily explaining the formation state of the fixing member shown in FIG.

  With reference to FIG. 15, the state which removed the infrared absorber 2 from FIG. 14 is shown. The two fixing members 22 </ b> A are formed so as to straddle the temperature detection unit 4 from the support leg 3. These fixing members 22A are also connected to the infrared absorber 2 that originally exists (that is, not shown in FIG. 15). Thereby, it becomes possible to prevent the support leg 3 from contacting the infrared absorber 2.

  Further, since the fixing member 22A is provided only in a very small area of the area 7A shown in FIG. 10, the recess 8 having a desired size is stably formed by crystal anisotropic processing also in this embodiment. It is possible.

  Since the step of forming the recess in the substrate and the step of removing fixing members 22 and 22A are the same as in the first embodiment, the following description will not be repeated.

  In the second embodiment, a portion where sticking may occur at the time of drying after completion of the crystal anisotropic processing is fixed by the fixing members 22 and 22A. Therefore, the second embodiment can suppress the occurrence of sticking as compared with the first embodiment.

  The thermal infrared detection element manufactured by the manufacturing method of the present embodiment has a heat insulation characteristic on the order of 100 MK (mega Kelvin) / W, and the conventional technology (releasing the temperature detection unit from the substrate by dry processing) is used. A uniform response can be obtained with respect to incident infrared light in the same manner as the infrared detecting element manufactured by using the infrared detecting element.

  As described above, according to the second embodiment, the possibility of sticking can be reduced as compared with the first embodiment.

[Embodiment 3]
The manufacturing method of the third embodiment is a method of manufacturing an array element. In the following, the step of forming the fixing member in the manufacturing method of the present embodiment will be described. Since other steps are the same as those in the first embodiment, the following description will not be repeated.

FIG. 16 is a plan view of an array element manufactured by the manufacturing method of the third embodiment.
17 is a cross-sectional view taken along line XVII-XVII in FIG.

  Referring to FIGS. 16 and 17, array element 1A has a configuration in which a plurality of thermal infrared detection elements 1 are arranged in an array.

  The effects of the manufacturing method of the present invention are exhibited particularly when manufacturing such an array element (image sensor). The recess 8 is determined by the physical properties of the substrate, that is, the crystallinity. As described above, when a recess is formed on a silicon substrate having an orientation flat surface orientation of <110> by crystal anisotropic processing, a recess surrounded by the <111> plane is formed, so that an array of recesses can be easily formed. Can be made.

  In the manufacturing method of the present invention, the fixing member 22 is not provided at a location where the crystal anisotropy processing proceeds smoothly (region 7A in FIG. 10) using such characteristics of the crystal anisotropy processing. As a result, it is possible to prevent the recesses from being connected between adjacent elements, so that the elements can be highly integrated. Note that it can be easily understood that the above-described effects can be obtained even when the number of thermal infrared detection elements is tens or hundreds.

  As shown in FIG. 17, the thermal infrared detection element 1 further includes an infrared reflector 9. The infrared reflector 9 covers at least a part of the support leg 3 and is disposed below the infrared absorber 2. It can be easily understood that the effects of the present invention can be obtained even when the infrared reflector 9 is provided.

  In FIG. 17, the fixing member 22 is provided between the infrared absorber 2 and the infrared reflector 9. The infrared reflector 9 is fixed to the substrate 7 through an insulating film. Therefore, it is possible to prevent the infrared absorber 2 from adhering to the infrared reflector 9 during drying after wet processing.

  The fixing member may be provided between the infrared absorber 2 and the substrate 7. Further, similarly to the second embodiment, the fixing member may be formed so as to connect the support leg 3 and the infrared absorber 2.

FIG. 18 is a cross-sectional view showing another arrangement example of the fixing member.
Referring to FIG. 18, fixing member 22 </ b> A is formed so as to connect infrared absorber 2 and support leg 3 via infrared reflector 9. Thereby, at the time of drying after wet processing, it can suppress that the support leg 3 contacts the temperature detection part 4, or contacts a cavity.

  As described above, according to the third embodiment, sticking can be prevented even in an array element in which thermal infrared detection elements are arrayed, so that the array element can be manufactured stably.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

2 is a plan view of a thermal infrared detection element manufactured by the manufacturing method of Embodiment 1. FIG. It is sectional drawing in the II-II line | wire of FIG. In the manufacturing process of the thermal type infrared detecting element 1, it is a top view in the stage in which the temperature detection part 4 and the support leg 3 were produced. It is sectional drawing in the IV-IV line of FIG. FIG. 3 is a cross-sectional view at a first stage in the manufacturing process of the infrared absorber 2. FIG. 4 is a cross-sectional view at a second stage in the manufacturing process of the infrared absorber 2. FIG. 4 is a cross-sectional view at a third stage in the manufacturing process of the infrared absorber 2. FIG. 6 is a plan view at a first stage in the formation process of the recess 8. It is sectional drawing in the IX-IX line of FIG. It is a figure which shows the part which crystal | crystallization anisotropic processing advances smoothly in the board | substrate 7. FIG. FIG. 6 is a cross-sectional view at a second stage in the formation process of the recess 8. It is a figure which shows another example of the fixing member. It is a top view which shows the state in which the infrared absorber was formed. It is a top view which shows the state in which the fixing member was formed. It is a top view for demonstrating clearly the formation state of the fixing member shown in FIG. 6 is a plan view of an array element manufactured by the manufacturing method of Embodiment 3. FIG. It is sectional drawing in the XVII-XVII line of FIG. It is sectional drawing which shows the other example of arrangement | positioning of a fixing member.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Thermal type infrared detection element, 1A array element, 2 Infrared absorber, 2A-2D edge part, 3 Support leg, 3A metal film, 3B dielectric film, 4 Temperature detection part, 6 Metal wiring, 7 Board | substrate, 7A area | region , 8 recess, 9 infrared reflector, 20 sacrificial layer, 20A opening, 22, 22A fixing member, 31, 32 opening.

Claims (8)

A method for manufacturing a thermal infrared detection element,
The thermal infrared detecting element is
A semiconductor substrate having a recess;
A temperature detector supported in the air above the recess by being connected to the semiconductor substrate via a support leg;
An infrared absorber that is connected to the temperature detector and spreads in a plane parallel to the main surface of the semiconductor substrate so as to cover at least the temperature detector;
The manufacturing method includes:
Forming the temperature detector and the support leg on the main surface;
Forming the infrared absorber;
Forming at least one fixing member for temporarily supporting the infrared absorber;
Removing the lower part of the temperature detection part and the lower part of the support leg of the semiconductor substrate using wet processing, and forming the concave part;
And a step of removing the fixing member.   The method for manufacturing a thermal infrared detection element according to claim 1, wherein in the step of forming the fixing member, the fixing member is formed so as to fix the infrared absorber to the semiconductor substrate.   The method for manufacturing a thermal infrared detection element according to claim 2, wherein in the step of forming the fixing member, the fixing member is further formed so as to connect the infrared absorber and the support leg. The thermal infrared detecting element is
An infrared reflector that covers at least a portion of the support leg and is disposed below the infrared absorber;
The method of manufacturing a thermal infrared detection element according to claim 2, wherein in the step of forming the fixing member, the fixing member is further formed so as to connect the infrared absorber and the infrared reflector. The thermal infrared detecting element is
An infrared reflector that covers at least a portion of the support leg and is disposed below the infrared absorber;
The thermal infrared ray according to claim 2, wherein in the step of forming the fixing member, the fixing member is further formed so as to connect the infrared absorber and the support leg through the infrared reflector. A method for manufacturing a detection element. The fixing member is formed using an organic material,
The method for manufacturing a thermal infrared detection element according to claim 1, wherein in the step of removing the fixing member, plasma fixing processing is performed to remove the fixing member.   The method for manufacturing a thermal infrared detection element according to claim 6, wherein the organic material is a negative photoresist.   An array element manufacturing method comprising a plurality of the thermal infrared detection elements in an array by the method for manufacturing a thermal infrared detection element according to any one of claims 1 to 7.

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