JP2007142479A5 - - Google Patents

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Publication number
JP2007142479A5
JP2007142479A5 JP2007049440A JP2007049440A JP2007142479A5 JP 2007142479 A5 JP2007142479 A5 JP 2007142479A5 JP 2007049440 A JP2007049440 A JP 2007049440A JP 2007049440 A JP2007049440 A JP 2007049440A JP 2007142479 A5 JP2007142479 A5 JP 2007142479A5
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JP
Japan
Prior art keywords
light emitting
substrate
emitting element
semiconductor device
length
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Pending
Application number
JP2007049440A
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Japanese (ja)
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JP2007142479A (en
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Priority to JP2007049440A priority Critical patent/JP2007142479A/en
Priority claimed from JP2007049440A external-priority patent/JP2007142479A/en
Publication of JP2007142479A publication Critical patent/JP2007142479A/en
Publication of JP2007142479A5 publication Critical patent/JP2007142479A5/ja
Pending legal-status Critical Current

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Claims (6)

長辺方向の長さＬが１ｍｍ以上の発光素子と、該素子が搭載される上面と、その反対側に位置する底面とを有する熱伝導率が１７０Ｗ／ｍ・Ｋ以上の、Ｃｕ−ＷまたはＣｕ−Ｍｏの基板とを備え、該発光素子の主面の長辺方向の長さＬと該基板の上面の発光素子搭載部から底面までの距離Ｈとの比Ｈ／Ｌが、０．３以上であり、前記基板の熱膨張係数が５〜１２×１０-6／Ｋ、および前記発光素子の熱膨張係数が３〜７×１０-6／Ｋである、半導体装置。 Cu—W having a thermal conductivity of 170 W / m · K or more, having a light emitting element having a length L in the long side direction of 1 mm or more, a top surface on which the element is mounted, and a bottom surface located on the opposite side. And a ratio H / L of the length L in the long side direction of the main surface of the light emitting element to the distance H from the light emitting element mounting portion to the bottom surface of the upper surface of the substrate is 0.3. The semiconductor device in which the thermal expansion coefficient of the substrate is 5 to 12 × 10 −6 / K and the thermal expansion coefficient of the light emitting element is 3 to 7 × 10 −6 / K. 前記基板のＣｕの含有量が５〜４０質量％である、請求項１に記載の半導体装置。   The semiconductor device according to claim 1, wherein the Cu content of the substrate is 5 to 40 mass%. 長辺方向の長さＬが１ｍｍ以上でサファイヤ基板上にＩＩ−ＶＩ族またはＩＩＩ−Ｖ族の化合物半導体が形成された発光素子と、該素子が搭載される上面と、その反対側に位置する底面とを有する熱伝導率が１７０Ｗ／ｍ・Ｋ以上の基板とを備え、該発光素子の主面の長辺方向の長さＬと該基板の上面の発光素子搭載部から底面までの距離Ｈとの比Ｈ／Ｌが、０．３以上であり、前記基板および前記発光素子の熱膨張係数が３〜７×１０A light emitting device having a length L in the long side direction of 1 mm or more and having a II-VI group or III-V group compound semiconductor formed on a sapphire substrate, an upper surface on which the device is mounted, and an opposite side A substrate having a bottom surface and a thermal conductivity of 170 W / m · K or more, a length L in the long side direction of the main surface of the light emitting element, and a distance H from the light emitting element mounting portion to the bottom surface of the top surface of the substrate. H / L is 0.3 or more, and the thermal expansion coefficient of the substrate and the light emitting element is 3 to 7 × 10 -6-6 ／Ｋである、半導体装置。A semiconductor device that is / K. 前記基板の素子搭載面の表面粗さが最大粗さＲｍａｘで０．１〜２０μｍである、請求項１または３に記載の半導体装置。 Surface roughness of the element mounting surface of the substrate is a 0.1~20μm the maximum roughness Rmax, the semiconductor device according to claim 1 or 3. 該素子が搭載される基板の部分が凹部を形成するとともに、上面上に金属層が形成されている請求項１または３に記載の半導体装置。 With a portion of the substrate the element is mounted to form a recess, the semiconductor device according to claim 1 or 3 metal layer is formed on the top surface. 前記発光素子と該素子への電力供給のための端子板との間を繋ぐ接続部材が、凹部と別の位置に配置され、同接続部材の凹部への浸入を防ぐ手段が、同接続部材に隣接する上面上に設けられている、請求項５に記載の半導体装置。 A connecting member that connects between the light emitting element and a terminal plate for supplying power to the element is disposed at a position different from the recessed portion, and means for preventing the connecting member from entering the recessed portion is provided in the connecting member. The semiconductor device according to claim 5 , wherein the semiconductor device is provided on an adjacent upper surface.
JP2007049440A 2003-03-14 2007-02-28 Semiconductor device Pending JP2007142479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007049440A JP2007142479A (en) 2003-03-14 2007-02-28 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003069711 2003-03-14
JP2007049440A JP2007142479A (en) 2003-03-14 2007-02-28 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2005503515A Division JP4001169B2 (en) 2003-03-14 2004-03-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JP2007142479A JP2007142479A (en) 2007-06-07
JP2007142479A5 true JP2007142479A5 (en) 2007-08-23

Family

ID=38204872

Family Applications (1)

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JP2007049440A Pending JP2007142479A (en) 2003-03-14 2007-02-28 Semiconductor device

Country Status (1)

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JP (1) JP2007142479A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397193B (en) * 2007-11-05 2013-05-21 Univ Nat Chunghsing Light emitting diode chip element with heat dissipation substrate and method for making the same
JP2009123823A (en) * 2007-11-13 2009-06-04 Denki Kagaku Kogyo Kk Light emitting element package, and light emitting device mounted with the same
JP5400290B2 (en) * 2007-11-13 2014-01-29 電気化学工業株式会社 Light emitting device
JP5400289B2 (en) * 2007-11-13 2014-01-29 電気化学工業株式会社 Light emitting device
WO2011007872A1 (en) * 2009-07-17 2011-01-20 電気化学工業株式会社 Manufacturing method of led chip assembly
JPWO2011007874A1 (en) * 2009-07-17 2012-12-27 電気化学工業株式会社 LED chip assembly, LED package, and manufacturing method of LED package
KR101685231B1 (en) * 2009-07-31 2016-12-09 덴카 주식회사 Wafer for led mounting, method for manufacturing same, and led-mounted structure using the wafer
WO2013038964A1 (en) * 2011-09-13 2013-03-21 電気化学工業株式会社 Clad material for led light-emitting element holding substrate, and method for manufacturing same
JP5792694B2 (en) 2012-08-14 2015-10-14 株式会社東芝 Semiconductor light emitting device
WO2017014127A1 (en) * 2015-07-21 2017-01-26 株式会社村田製作所 Led mounting substrate

Family Cites Families (14)

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JPS6074485A (en) * 1983-09-29 1985-04-26 Toshiba Corp Semiconductor light-emitting device
JPH05211373A (en) * 1992-01-20 1993-08-20 Nec Corp Semiconductor laser
JPH0796620A (en) * 1993-09-30 1995-04-11 Kyocera Corp Thermal head
JPH09234896A (en) * 1995-12-27 1997-09-09 Kyocera Corp Thermal head
JPH1051065A (en) * 1996-08-02 1998-02-20 Matsushita Electron Corp Semiconductor laser device
JPH10150227A (en) * 1996-11-15 1998-06-02 Rohm Co Ltd Chip-type light emitting device
JP3432113B2 (en) * 1997-07-07 2003-08-04 シャープ株式会社 Optical semiconductor device
JPH11307875A (en) * 1998-04-24 1999-11-05 Sony Corp Electronic device
CA2326723A1 (en) * 1999-02-03 2000-08-10 Takeshi Aikiyo Semiconductor laser device and semiconductor laser module using the same
JP2001135886A (en) * 1999-08-24 2001-05-18 Mitsui Chemicals Inc Semiconductor laser element, semiconductor laser module and fiber module
JP4897133B2 (en) * 1999-12-09 2012-03-14 ソニー株式会社 Semiconductor light emitting device, method for manufacturing the same, and mounting substrate
JP4959071B2 (en) * 2001-07-04 2012-06-20 ローム株式会社 Surface mount semiconductor device
JP3912130B2 (en) * 2002-02-18 2007-05-09 住友電気工業株式会社 Submount
JP2004235534A (en) * 2003-01-31 2004-08-19 Fuji Photo Film Co Ltd Laser element and manufacturing method thereof, and laser module using the laser element

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