JP2007142077A - Substrate-treating device and substrate treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate-treating device and a substrate treatment method capable of accurately treating etching width in a treatment region by protecting a non-treated region on the surface of a substrate reliably and preventing rinse failure. <P>SOLUTION: A screening plate 5 is disposed opposite a substrate surface Wf in the vicinity thereof in a separated state. A through-hole penetrating in upper and lower directions is formed at a position corresponding to a surface periphery TR on the screening plate 5. A periphery treatment nozzle 7 is moved from a separation position P1 to a treatment position P2 and is inserted into the through-hole. The hole diameter of the through-hole is formed to be larger than the outer diameter of the periphery treatment nozzle 7; and the periphery treatment nozzle 7 is selectively positioned at an etching position P21 for supplying a chemical liquid to a surface periphery TR as the treatment position P2, and a rinse position P22 positioned at the inside in the radial direction of the substrate W as compared with the etching position P21. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention provides a substrate processing apparatus and method for supplying a processing solution such as a chemical solution or a rinsing solution to a substrate such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal, or a substrate for an optical disk to perform a predetermined process on the substrate. About.

  A series of processing steps for a substrate such as a semiconductor wafer has a plurality of film forming steps for forming a thin film such as a photoresist on the surface of the substrate. The film may also be formed on the periphery of the film. However, in general, it is only the circuit formation region at the center of the substrate surface that needs to be formed on the substrate, and if the film is formed on the back surface of the substrate or the peripheral portion of the substrate surface, In some cases, the thin film formed on the peripheral edge of the substrate surface may be peeled off due to contact with other apparatuses, which may cause a decrease in yield and trouble in the substrate processing apparatus itself.

  Therefore, in order to remove the thin film formed on the back surface of the substrate and the peripheral edge of the substrate surface, for example, an apparatus described in Patent Document 1 has been proposed. In this apparatus, the outer peripheral end portion of the substrate having a thin film formed on the surface thereof is held by a holding member such as a chuck pin, and the holding member is rotated. Further, a chemical solution is supplied to the back surface of the rotating substrate. At this time, when the blocking member that has the facing surface facing the surface of the substrate and is separated from the surface of the substrate by a predetermined distance is rotated, the chemical solution spreads over the entire back surface of the substrate by the rotation of the substrate and the rotation of the blocking member. Not only the unnecessary material on the back surface of the substrate is removed by etching, but also the peripheral surface portion of the substrate surface is passed through the end surface of the substrate, and the unnecessary material on the peripheral portion is also etched away. Similarly, pure water is circulated around the peripheral portion of the substrate surface, and the rinsing process is performed on the peripheral portion. Thus, the thin film is etched away only at the back surface of the substrate and at the peripheral edge of the substrate surface.

  Moreover, in the apparatus described in Patent Document 2, the thin film formed on the peripheral portion of the substrate surface is removed by discharging the processing liquid from a nozzle disposed opposite to the peripheral portion of the substrate surface. In this apparatus, two nozzles, that is, a first nozzle that discharges a first processing liquid (hydrogen peroxide solution) and a second nozzle that discharges a second processing liquid (chemical liquid such as hydrofluoric acid). The first nozzle is provided closer to the center direction of rotation of the substrate than the second nozzle. With this configuration, the first processing liquid flows to the opposite side of the center direction of the substrate due to the centrifugal force generated by the rotation of the substrate, and the second processing liquid is discharged onto the flow of the first processing liquid. .

JP 2000-235948 A (page 2-3, FIG. 1) Japanese Patent Laid-Open No. 2001-319849 (FIG. 7)

  By the way, the above-described substrate processing is performed in order to remove a thin film in a certain range (processing region) from the periphery of the non-processing region formed in the substantially central portion of the substrate surface. Therefore, it is desirable to accurately control the width removed by etching (hereinafter referred to as “periphery etching width”). In particular, when a metal layer such as copper is formed on the substrate surface as a thin film, the above substrate processing aims to remove the metal near the end face (bevel), so the peripheral etching width is made uniform over the entire peripheral surface. It has become very important.

  However, the apparatus described in Patent Document 1 has the following problems because the peripheral etching width is controlled by the amount of wraparound of the processing liquid. In other words, changing the number of rotations of the substrate changes the amount of wraparound of the processing liquid and adjusts the peripheral etching width accordingly, but it is difficult to stabilize the amount of wraparound due to the number of rotations of the substrate. It was practically impossible to control the peripheral etching width with uniform uniformity. In addition, since the outer peripheral edge of the substrate is held by a holding member such as a chuck pin during processing, the chemical solution circulates between the portion held by the holding member and the portion other than the peripheral edge of the substrate surface. Due to the difference in amount, the processing with a uniform peripheral etching width was made more difficult.

  Further, after the etching process is performed on the peripheral portion (processing region) of the substrate surface due to the wraparound of the chemical solution, the chemical solution adhering to the interface between the processing region and the non-processing region is sufficiently washed away when the peripheral portion is rinsed. It was not possible to carry out rinsing.

  Further, in the apparatus described in Patent Document 2, since the nozzle is disposed facing the substrate surface, the blocking member cannot be disposed facing the substrate surface in this state. Therefore, it is conceivable to make the substrate facing surface of the blocking member smaller than the outer shape of the substrate in order to arrange the blocking member while arranging the nozzle facing the peripheral portion of the substrate surface. The following problems occur: That is, the atmosphere on the substrate surface cannot be controlled sufficiently, and the chemical atmosphere or the scattered mist-like processing liquid adheres to the circuit formation region (non-processing region) at the center of the substrate surface and corrodes. A problem occurs. Further, when the substrate is rotated at a high speed and spin-dried, an external atmosphere is involved, and a damage such as a watermark remains on the surface of the substrate, which may cause poor drying.

  SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and is a substrate processing apparatus capable of accurately processing an etching width in a processing region by preventing a rinsing failure while reliably protecting a non-processing region on a substrate surface. And to provide a method.

  A substrate processing apparatus according to the present invention supplies a chemical solution as a processing liquid to a processing region on a substrate surface having a processing region and a non-processing region, and performs an etching process on the processing region. A substrate processing apparatus for supplying a rinsing liquid as a processing liquid to perform a rinsing process on the processing region, and in order to achieve the above object, a substrate holding means for holding the substrate and a substrate by discharging the processing liquid A nozzle that supplies a processing liquid to a processing region on the surface of the substrate held by the holding means, a blocking member that is disposed facing the substrate surface and has a through-hole penetrating in the vertical direction, and drives the nozzle In this way, the nozzle is inserted into the through-hole to provide a processing position where the processing liquid can be supplied to the processing region, and a nozzle drive mechanism which is positioned at a separated position away from the blocking member. The hole diameter of the through hole is formed larger than the outer diameter of the nozzle, and the nozzle drive mechanism is capable of supplying, as the processing position, an etching position at which a chemical solution can be supplied to the processing region, and a rinsing liquid at the processing region. The nozzle is selectively positioned at a rinse position that is different from the position in the horizontal direction.

  Further, the substrate processing method according to the present invention supplies the chemical solution as the processing liquid to the processing region on the surface of the substrate having the processing region and the non-processing region, and performs the etching process on the processing region. A substrate processing method for supplying a rinsing liquid as a processing liquid to a processing region and rinsing the processing region. In order to achieve the above object, a blocking member having a through-hole penetrating in a vertical direction is provided on a substrate. A process of placing the nozzles close to each other, a process of inserting a nozzle into the through-hole and positioning the etching area where chemicals can be supplied to the processing area, performing an etching process on the processing area, and supplying a rinsing liquid to the processing area Etching is possible by positioning the nozzle at a rinsing position that is different from the etching position in the horizontal direction and supplying rinsing liquid from the nozzle. It is characterized in that a step of performing a rinsing process on the processing area management is performed.

  In the invention configured as described above (substrate processing apparatus and method), the substrate surface is covered by the blocking member disposed opposite to and close to the substrate surface, and the substrate surface is reliably protected from the external atmosphere around the substrate. In addition, since the blocking member has a through-hole penetrating in the vertical direction in which the nozzle can be inserted, the nozzle can be arranged to face the processing region by inserting the nozzle into the through-hole. Accordingly, the blocking member covers the substrate surface to prevent the chemical atmosphere or the mist-like processing liquid from adhering to the non-processing region, while supplying the processing liquid directly from the nozzle to the processing region. The etching width can be accurately processed.

  As described above, in the present invention, the nozzle is inserted into the through hole of the blocking member to perform the etching process and the rinsing process. However, it is further excellent by considering the relationship between the hole diameter of the through hole and the outer diameter of the nozzle. The effect is obtained. That is, considering only the insertion of the nozzle into the through hole, the hole diameter of the through hole and the outer diameter of the nozzle can be set to substantially the same size. However, when such a dimensional relationship is adopted, when the nozzle is inserted into and removed from the through hole, the nozzle and the inner wall of the through hole slide, and the particles generated by the sliding are transferred to the substrate surface. May adversely affect the process. Further, since the nozzle position is fixed, the supply range of the processing liquid is the same in the etching process and the rinsing process, and the chemical liquid adhering to the interface between the processing area and the non-processing area can be sufficiently washed away by the rinsing liquid. Failure to do so may result in poor rinsing. On the other hand, if the device is configured so that the hole diameter of the through hole is larger than the outer diameter of the nozzle, sliding between the nozzle and the through hole is prevented when the nozzle is inserted into and removed from the through hole, and etching and rinsing processes are performed. Thus, the supply range of the treatment liquid can be made different.

  Therefore, in the present invention, by forming the hole diameter of the through hole larger than the outer diameter of the nozzle, when the nozzle is moved between the separation position and the processing position and the nozzle is inserted into and removed from the through hole, The nozzle and the inner wall of the through hole are prevented from sliding. As a result, it is possible to prevent particles generated during sliding from adhering to the substrate surface and adversely affecting the process. In particular, nozzle drive parts such as nozzles and nozzle arms need to be resistant to chemicals and are often made of a resin material, and it is difficult to ensure the positioning accuracy of the nozzles. By setting the hole diameter, it is possible to effectively prevent the generation of particles.

  Further, in the present invention, while satisfying the relationship that the hole diameter of the through hole is larger than the outer diameter of the nozzle, the etching position where the chemical solution can be supplied to the processing region, and the rinsing liquid can be supplied to the processing region. The nozzle is selectively positioned at a rinse position that is different from the position in the horizontal direction. Therefore, by changing the nozzle position between the etching position and the rinsing position, the chemical liquid supply range and the rinsing liquid supply range can be made different, and the etching process and the rinsing process can be optimized. In other words, when the nozzle is positioned at the etching position, the chemical solution is supplied to the entire processing region and etching is performed. After this etching process, the nozzle is positioned at the rinse position so that the range including the chemical solution supply range and the range wider than the chemical solution supply range can be set as the rinse solution supply range. For this reason, in the rinsing process, the rinsing liquid supply range can be made wider than the chemical liquid supply range, and the chemical liquid adhering to the interface between the processing area and the non-processing area can be easily washed away with the rinsing liquid. As a result, it is possible to prevent rinsing defects.

  Further, the peripheral edge of the substrate surface is used as a processing region to supply a chemical solution to the peripheral edge to perform an etching process, and a rinsing liquid is supplied as a processing liquid to the peripheral edge of the etched substrate surface to the peripheral edge. In the apparatus for performing the rinsing process, the apparatus further includes substrate rotating means for rotating the substrate held by the substrate holding means, and the blocking member is formed with a through hole at a position facing the processing region. It is preferable to position the nozzle on the radially inner side of the substrate with respect to the etching position. In the apparatus configured as described above, the processing liquid discharged from the nozzle receives a centrifugal force accompanying the rotation of the substrate, flows outward in the radial direction of the substrate, and is discharged out of the substrate. Therefore, the rinsing liquid supply range can be made wider than the chemical liquid supply range by positioning the nozzle as the rinsing position on the radially inner side of the substrate with respect to the etching position. Thereby, the chemical | medical solution adhering to the interface of a process area | region and a non-process area | region can be fully washed away with a rinse liquid, and the rinse defect can be prevented. In addition, since the non-process area at the center of the substrate surface is covered with the blocking member disposed opposite to the substrate surface, it is possible to prevent the non-process area from being corroded due to rebound of the process liquid.

  In addition, a gas supply means for supplying gas to a space formed between the substrate surface and the facing surface of the blocking member facing the substrate surface is further provided, and the substrate holding means is rotatable about the vertical axis. A rotation member provided; and at least three or more support members that are provided upward on the rotation member and support the substrate separated from the rotation member by contacting the back surface of the substrate. Preferably, the substrate is pressed against the support member by supplying the gas to the space through the gas outlet provided on the opposing surface of the blocking member by the gas supply means. According to this configuration, the substrate is supported by being spaced apart by at least three or more support members that are in contact with the back surface of the substrate, and in a space formed between the opposing surface of the blocking member and the substrate surface from the gas supply means. It is pressed by the supporting member by the supplied gas and is held by the rotating member. In such a state, the substrate rotating means rotates the rotating member so that the substrate pressed by the supporting member rotates together with the rotating member while being supported by the supporting member by the frictional force generated between the supporting member and the back surface of the substrate. Thus, by holding the substrate on the rotating member, a holding member such as a chuck pin for holding the substrate in contact with the outer peripheral end of the substrate can be eliminated. Therefore, the processing liquid traveling radially outward along the substrate surface by the rotation of the substrate does not directly hit the holding member and bounce back to the substrate surface. In addition, since there is no factor that disturbs the airflow in the vicinity of the outer peripheral edge of the substrate, it is possible to reduce entrainment of the mist-like processing liquid on the substrate surface side. As a result, it is possible to effectively prevent the treatment liquid from adhering to the non-treatment region at the center of the substrate surface.

  Further, a gas introduction part may be provided on the inner wall of the through hole, and the gas may be introduced into the through hole from the gas introduction part. According to this configuration, when the nozzle moves to the separation position and is extracted from the through hole, the gas is ejected from the through hole, and the processing liquid enters the through hole. The occurrence of rebounding can be suppressed.

  In addition, a stepped surface between the nozzle tip side barrel and the nozzle rear end side barrel so that the cross-sectional area of the nozzle tip side barrel is smaller than the nozzle rear end barrel cross-sectional area. While the nozzle is formed so as to have a contact surface, a contact surface that can contact the stepped surface of the nozzle is provided on the inner wall of the through hole formed in the blocking member, and the stepped surface of the nozzle is pressed against the contact surface of the blocking member Thus, the nozzle may be positioned at the processing position. Thereby, the nozzle is abutted and fixed to the blocking member, and the nozzle can be stably positioned at the processing position. As a result, it is possible to prevent the discharge position of the processing liquid from the nozzle from becoming unstable due to the influence of the airflow around the nozzle, vibration transmitted to the nozzle, and the like. In particular, the distance between the substrate and the nozzle can be made constant, and the etching width and the like in the processing region can be strictly controlled.

  Here, in the blocking member, the through hole is formed so that the difference between the diameter of the body portion on the nozzle front end side and the diameter of the through hole is larger than the difference between the diameter of the body portion on the rear end side of the nozzle and the hole diameter of the through hole. It is preferred that According to such a configuration, even when the nozzle and the inner wall of the through hole slide, the sliding occurs between the body portion on the nozzle rear end side and the inner wall of the through hole. The following advantages are born. In other words, the more particles are generated at a position closer to the substrate, the greater the effect on the process is. However, even if sliding occurs, the position is relatively far away from the substrate. The effect of the particles on the process can be reduced. In this case, the discharge position of the nozzle can be changed between the etching position and the rinsing position between the difference between the body diameter on the nozzle rear end side and the hole diameter of the through hole.

  Furthermore, with this configuration, it is possible to minimize the hole diameter of the through hole while preventing adverse effects of the particles on the process. In other words, from the viewpoint of avoiding sliding between the nozzle and the through-hole, the larger the hole diameter of the through-hole than the outer diameter of the nozzle, the better. However, increasing the hole diameter reduces the area of the opposing surface of the blocking member, and the atmosphere blocking effect And the risk of occurrence of problems such as rebounding of the processing liquid due to the through hole is increased. Therefore, by setting the nozzle body diameter and the hole diameter of the through hole as described above, it is possible to suppress problems caused by the through hole while preventing adverse effects on the process due to particles.

  Also, if a gas introduction part is provided on the inner wall of the through hole in a direction away from the substrate with respect to the contact surface, and the gas is introduced from the gas introduction part into the through hole, the nozzle moves to the processing position and penetrates. When the nozzle is inserted into the hole, the stepped surface of the nozzle and the contact surface of the blocking member come into contact with each other, so that gas is prevented from being ejected from the through hole to the substrate side beyond the contact portion. For this reason, even when particles are generated by sliding between the nozzle and the inner wall of the through hole, it is possible to prevent the particles from reaching the substrate surface together with the gas. Further, it is possible to prevent the gas from leaking into the space between the substrate and the blocking member during the etching process or the rinsing process, disturbing the airflow on the substrate surface, and causing problems such as rebound of the processing liquid. The gas (and particles) introduced into the through hole is discharged from the opening on the side opposite to the substrate with respect to the gas introduction part.

  According to this invention, the nozzle is inserted into the through-hole formed in the blocking member while preventing the chemical atmosphere or the mist-like processing liquid from adhering to the non-processing area by arranging the blocking member facing the substrate surface. By supplying the processing liquid directly from the nozzle to the processing region, the etching width in the processing region can be accurately processed. In addition, by forming the hole diameter of the through hole larger than the outer diameter of the nozzle, the nozzle and the inner wall of the through hole are prevented from sliding when the nozzle is inserted into and removed from the through hole. It is possible to prevent particles generated during movement from adversely affecting the process. Furthermore, by changing the nozzle position between the etching position and the rinsing position inside the through hole, the rinsing liquid supply range can be made wider than the chemical liquid supply range, and the interface between the processing area and the non-processing area It is possible to easily wash away the chemical solution adhering to the rinsing liquid to improve the efficiency of the rinsing process and to prevent the rinsing failure.

  FIG. 1 is a diagram showing an embodiment of a substrate processing apparatus according to the present invention. This substrate processing apparatus is an apparatus for etching and removing a thin film such as a metal layer or a photoresist layer from a peripheral portion of a substrate surface Wf such as a semiconductor wafer. Specifically, a chemical solution or pure water such as a chemical or an organic solvent is applied to the peripheral portion TR (corresponding to the “treatment region” of the present invention) of the substrate W on which a thin film is formed on the surface Wf (device formation surface). Alternatively, an apparatus that etches and removes the thin film from the front surface peripheral portion TR by supplying a rinsing liquid such as DIW (hereinafter referred to as “processing liquid”), and supplies the processing liquid to the substrate back surface Wb to clean the entire back surface Wb. It is.

  This substrate processing apparatus includes a spin chuck 1 (substrate holding means) that horizontally rotates a substrate W with its front surface Wf facing upward, and a lower surface (back surface Wb) of the substrate W held by the spin chuck 1. ) And a lower surface processing nozzle 2 for supplying a processing liquid (chemical solution or rinsing liquid) toward the central portion, and a processing liquid is supplied toward the central portion of the upper surface (front surface Wf) of the substrate W held by the spin chuck 1. Upper surface processing nozzle 3, blocking plate 5 disposed opposite to the upper surface of substrate W held by spin chuck 1, and peripheral processing nozzle for supplying a processing liquid to surface peripheral portion TR of substrate W held by spin chuck 1 7 is provided.

  The spin chuck 1 has a hollow rotation support shaft 11 connected to a rotation shaft of a chuck rotation drive mechanism 13 including a motor, and can rotate around a rotation axis J extending in the vertical direction by driving the chuck rotation drive mechanism 13. ing. A spin base 15 is integrally connected to an upper end portion of the rotation spindle 11 by a fastening component such as a screw. Therefore, the spin base 15 rotates around the rotation axis J by driving the chuck rotation drive mechanism 13 in accordance with an operation command from the control unit 4 that controls the entire apparatus. Thus, in this embodiment, the spin base 15 corresponds to the “rotating member” of the present invention, and the chuck rotation drive mechanism 13 corresponds to the “substrate rotating means” of the present invention.

  A processing liquid supply pipe 21 is inserted into the hollow rotating spindle 11, and the lower surface processing nozzle 2 is coupled to the upper end of the processing liquid supply pipe 21. The treatment liquid supply pipe 21 is connected to a chemical liquid supply unit 22 and a rinse liquid supply unit 23, and a chemical liquid or a rinse liquid is selectively supplied. Further, a gap between the inner wall surface of the rotating spindle 11 and the outer wall surface of the processing liquid supply pipe 21 forms a cylindrical gas supply path 24. This gas supply path 24 is connected to a gas supply unit 25 (gas supply means), and can supply nitrogen gas to a space formed between the lower surface of the substrate W and the opposing surface of the spin base 15. In this embodiment, nitrogen gas is supplied from the gas supply unit 25. However, air or other inert gas may be discharged.

  FIG. 2 is a plan view of the spin base 15 as viewed from above. The spin base 15 is provided with an opening at the center thereof, and a plurality of (24 in this embodiment) support pins F1 to F12 and S1 to S12 are provided in the vicinity of the peripheral edge of the spin base 15 according to the present invention. As shown in FIG. Here, in order to horizontally support the substrate W, the number of support pins may be at least three or more. However, in order to process a portion where the support pins abut on the lower surface of the substrate W, the support pins are arranged on the substrate. It is desirable that the lower surface of W be configured so as to be able to come into contact with and separate from the lower surface of W, and that the support pins be separated from the lower surface of substrate W at least once during processing. Therefore, at least four or more support pins are required to process the lower surface of the substrate W including the portion where the support pins abut against the lower surface of the substrate W, which is more stable than the 24 embodiment. Thus, the substrate W can be supported.

  The support pins F1 to F12 and S1 to S12 are provided so as to protrude upward from the spin base 15 at substantially equal angular intervals radially about the rotation axis J. Each of the support pins F <b> 1 to F <b> 12 and S <b> 1 to S <b> 12 is capable of supporting the substrate W horizontally while being spaced apart from the spin base 15 by a predetermined distance by contacting the substrate back surface Wb. Among these, twelve support pins F1 to F12 arranged every other along the circumferential direction constitute a first support pin group, and these support the substrate W in conjunction with each other, or the substrate It operates so as to be separated from the back surface of W and release its support. On the other hand, the remaining twelve support pins S1 to S12 constitute a second support pin group, and these support the substrate W in conjunction with each other or release the support away from the back surface of the substrate W. To work.

  FIG. 3 is a partially enlarged view showing the structure of the support pin. Since each of the support pins F1 to F12 and S1 to S12 has the same configuration, only the configuration of one support pin F1 will be described here with reference to the drawings. The support pin F1 includes a contact portion 61 that can be brought into and out of contact with the lower surface of the substrate W, a movable rod 62 that supports the contact portion 61 so as to be movable in the vertical direction, a motor that moves the movable rod 62 up and down, and the like. And a bellows 64 provided so as to surround the movable rod 62 and blocking the movable rod 62 and the lift driving unit 63 from the external atmosphere. The bellows 64 is formed of PTFE (polytetrafluoroethylene), for example, and protects the movable rod 62 formed of stainless steel (SUS) or aluminum when the substrate W is processed with a chemical solution or the like. The contact portion 61 is preferably formed of PCTFE (polychlorotrifluoroethylene) in consideration of chemical resistance. The upper end portion of the bellows 64 is fixed to the lower surface side of the contact portion 61, while the lower end portion of the bellows 64 is fixed to the upper surface side of the spin base 15. In addition, the raising / lowering drive part 63 may use not only a motor but actuators, such as an air cylinder, in general.

  In the support pins F1 to F12 and S1 to S12 having the above-described configuration, the elevating drive unit 63 moves the movable rod 62 with a stroke of 1 to several mm via a drive connection unit (not shown) based on a drive signal from the control unit 4. By driving, the substrate W is supported as follows. That is, in a state where the elevating drive unit 63 is not driven, each of the support pins F1 to F12 and S1 to S12 is urged by a coil spring or the like so as to support the substrate W at a predetermined height position (substrate processing position). The substrate W is biased upward by a support pin group including both a first support pin group including support pins F1 to F12 and a second support pin group including support pins S1 to S12. Supported. On the other hand, when the support pins S1 to S12 are driven downward against the urging force, the contact portions 61 of the support pins S1 to S12 are separated from the lower surface of the substrate W, and the substrate W is formed of the support pins F1 to F12. It is supported only by one support pin group. When the support pins F1 to F12 are driven downward against the urging force, the contact portions 61 of the support pins F1 to F12 are separated from the lower surface of the substrate W, and the substrate W is the second formed of the support pins S1 to S12. It is supported only by the support pin group.

  Returning to FIG. 1, the description will be continued. Above the spin chuck 1, a disc-shaped blocking plate 5 facing the substrate W supported by the support pins F1 to F12 and S1 to S12 is horizontally disposed as the “blocking member” of the present invention. The blocking plate 5 is attached to a lower end portion of a rotation support shaft 51 disposed coaxially with the rotation support shaft 11 of the spin chuck 1 so as to be integrally rotatable. A shield plate rotation drive mechanism 52 is connected to the rotation support shaft 51, and the shield plate 5 is rotated by the rotation axis J by driving the motor of the shield plate rotation drive mechanism 52 in accordance with an operation command from the control unit 4. Rotate around. The control unit 4 can rotationally drive the shielding plate 5 at the same rotational direction and the same rotational speed as the spin chuck 1 by controlling the shielding plate rotation drive mechanism 52 to synchronize with the chuck rotation drive mechanism 13.

  Further, the blocking plate 5 is connected to the blocking plate lifting / lowering drive mechanism 53, and operates the lifting drive actuator (for example, an air cylinder) of the blocking plate lifting / lowering driving mechanism 53 to bring the blocking plate 5 close to the spin base 15. Can be opposed to each other, or conversely separated. Specifically, the control unit 4 drives the blocking plate lifting / lowering drive mechanism 53 so that the blocking plate 5 is placed at the retracted position above the spin chuck 1 when the substrate W is loaded into and unloaded from the substrate processing apparatus. Raise. On the other hand, when a predetermined process such as etching is performed on the substrate W, it is set very close to the surface Wf of the substrate W held by the spin chuck 1 and reaches a position facing the substrate surface Wf. The blocking plate 5 is lowered. As a result, the lower surface (opposing surface 501) of the blocking plate 5 and the substrate surface Wf are spaced apart and disposed opposite to each other.

  A processing liquid supply pipe 31 is inserted through the opening at the center of the blocking plate 5 and the hollow portion of the rotation support shaft 51, and the upper surface processing nozzle 3 is coupled to the lower end thereof. The treatment liquid supply pipe 31 is connected to the chemical liquid supply unit 22 and the rinse liquid supply unit 23, and the chemical liquid or the rinse liquid is selectively supplied to the upper surface of the substrate W held by the spin chuck 1. A gap between the inner wall surface of the rotation spindle 51 and the outer wall surface of the processing liquid supply pipe 31 forms a cylindrical gas supply path 32. The gas supply path 32 is connected to the gas supply unit 25 and can supply nitrogen gas to a space SP formed between the upper surface (front surface Wf) of the substrate W and the opposing surface 501 of the blocking plate 5. .

  FIG. 4 is a bottom view of the blocking plate 5. The planar size of the facing surface 501 facing the substrate surface Wf of the blocking plate 5 is formed to be equal to or larger than the diameter of the substrate W, and has an opening at the center. For this reason, when the shielding plate 5 is disposed at the opposing position, it is possible to cover the entire surface of the substrate W and shield the atmosphere on the substrate surface Wf from the external atmosphere. Further, a through hole 502 having a substantially cylindrical inner space that penetrates the blocking plate 5 in the vertical direction (vertical axis direction) is formed in the peripheral portion of the blocking plate 5, and a peripheral processing nozzle 7 described later is inserted therein. It is possible. Since the through hole 502 is formed at a position facing the surface peripheral portion TR of the substrate W held by the spin chuck 1, the peripheral processing nozzle 7 is inserted into the through hole 502 so that the peripheral processing nozzle 7 It can be arranged to face the part TR.

  In addition, a plurality of gas outlets 506 are opened on the facing surface 501. The plurality of gas ejection ports 506 are formed at equiangular intervals along the circumference centering on the rotation axis J at a position facing the non-treatment region NTR at the center of the surface of the substrate W held by the spin chuck 1. Yes. These gas outlets 506 communicate with the gas circulation space 505 inside the blocking plate 5, and when nitrogen gas is supplied to the gas circulation space 505, the nitrogen gas is transferred to the space SP via the gas outlet 506. Supplied. The gas outlet is not limited to a plurality of openings, but may be a single opening, for example, a ring opening around the entire circumference around the rotation axis J. However, the use of a plurality of gas outlets is advantageous in that the gas injection pressure is uniform.

  And by supplying nitrogen gas to this space SP, the internal pressure of space SP can be raised and the board | substrate W can be pressed by the support pins F1-F12 and S1-S12 which contact | abut the lower surface. Thereby, the substrate W pressed by the support pins F1 to F12 and S1 to S12 is rotated between the lower surface of the substrate W and the support pins F1 to F12 and S1 to S12 by the chuck rotation driving mechanism 13 rotating the spin base 15. It rotates with the spin base 15 while being supported by the support pins F1 to F12 and S1 to S12 by the frictional force generated therebetween. The supplied nitrogen gas flows in the space SP from the vicinity of the center of the substrate W to the outside in the radial direction.

  Returning to FIG. 1, the description will be continued. The peripheral processing nozzle 7 is fixed to one end of the nozzle arm 71. The other end of the nozzle arm 71 is pivotally supported by an arm shaft 72, and the periphery processing nozzle 7 can swing within a predetermined angle range about the arm shaft 72 by rotating the arm shaft 72. The arm shaft 72 is connected to a drive mechanism 73 that integrally drives the nozzle arm 71 and the peripheral edge processing nozzle 7 fixed to the nozzle arm 71. The drive mechanism 73 includes a swing drive source 731 such as a motor that swings the peripheral processing nozzle 7 and the nozzle arm 71, and a lift drive source such as a cylinder that vertically moves the peripheral processing nozzle 7 and the nozzle arm 71 up and down. 732. With these configurations, the peripheral edge processing nozzle 7 can be horizontally moved in parallel with the substrate surface Wf by the swing drive source 731 and can be moved up and down by the lift drive source 732. For this reason, the drive mechanism 73 is driven in accordance with an operation command from the control unit 4, thereby separating the peripheral processing nozzle 7 and the nozzle arm 71 from the surface peripheral portion TR (shown by a broken line in FIG. 1). Position) and a processing position P2 (a position indicated by a solid line in FIG. 1) which is inserted into the through hole 502 of the blocking plate 5 and can supply the processing liquid to the surface peripheral portion TR. Thus, in this embodiment, the peripheral processing nozzle 7 functions as the “nozzle” of the present invention, and the drive mechanism 73 functions as the “nozzle drive mechanism” of the present invention.

  FIG. 5 is a partial perspective view of the substrate processing apparatus of FIG. The peripheral processing nozzle 7 is formed in a substantially cylindrical shape in accordance with the shape of the through hole 502 of the blocking plate 5 and is inserted into the through hole 502 so that the front end side of the peripheral processing nozzle 7 becomes the surface peripheral portion TR (FIG. 1). Opposed to each other. A processing liquid supply path 701 is formed inside the peripheral processing nozzle 7, and a tip end (lower end) of the processing liquid supply path 701 forms an ejection port 701 a of the peripheral processing nozzle 7. When the peripheral processing nozzle 7 is inserted into the through hole 502, the tip surface 7 a around the discharge port 701 a of the peripheral processing nozzle 7 is inserted to a position flush with the opposing surface 501 of the blocking plate 5. The diameter of the peripheral processing nozzle 7 (the outer diameter of the nozzle) is, for example, about φ5 to 6 mm so as not to increase the diameter of the through-hole 502 more than necessary due to the insertion into the through-hole 502 of the blocking plate 5. Composed.

  The discharge port 701a of the peripheral processing nozzle 7 opens toward the outside in the radial direction of the substrate W, and the chemical solution and the rinse liquid can be selectively supplied from the discharge port 701a to the surface peripheral portion TR. The treatment liquid supply path 701 is connected to the chemical liquid supply unit 22 and the rinse liquid supply unit 23 via a tube or the like at the rear end of the nozzle, and is supplied with the chemical liquid or the rinse liquid. For this reason, for example, when the chemical solution is pumped from the chemical solution supply unit 22 in response to an operation command from the control unit 4, the chemical solution is discharged from the discharge port 701a of the peripheral processing nozzle 7 and supplied to the surface peripheral portion TR. It flows toward the outside in the radial direction of the substrate W and is discharged out of the substrate. Therefore, no chemical solution is supplied to the non-process region NTR on the inner periphery side of the substrate with respect to the supply position of the chemical solution. As a result, the peripheral portion of the substrate surface Wf has a constant peripheral etching width from the end surface of the substrate W to the inside. The thin film is etched away.

  Further, when the rinsing liquid is pumped from the rinsing liquid supply unit 23 in accordance with the operation command from the control unit 4, the rinsing liquid is discharged from the discharge port 701a of the peripheral processing nozzle 7 and supplied to the surface peripheral portion TR. , Flows radially outward of the substrate W and is discharged out of the substrate.

  The peripheral processing nozzle 7 is configured such that the cross-sectional area of the nozzle body formed in a substantially cylindrical shape is different between the nozzle front end side and the rear end side. Specifically, the cross-sectional area of the body 703 on the nozzle front end side is configured to be smaller than the cross-sectional area of the body 704 on the nozzle rear end side, and the body 703 on the nozzle front end side and the nozzle rear end are configured. A step surface 7 b is provided between the side body portion 704 and the side surface portion 704. That is, the outer surface (side surface) of the body portion 703 on the nozzle front end side and the outer surface (side surface) of the body portion 704 on the nozzle rear end side are coupled via the step surface 7b. The step surface 7 b is formed in an annular shape surrounding the periphery of the body 703 on the nozzle tip side at the joint portion of the body, and is formed substantially parallel to the substrate surface Wf held by the spin chuck 1.

  The peripheral processing nozzle 7 and the nozzle arm 71 are formed of a resin material in consideration of chemical resistance. Specifically, the peripheral processing nozzle 7 is made of PTFE (polytetrafluoroethylene), and the nozzle arm 71 is made of PVC (polyvinyl chloride). The stepped surface 7b of the peripheral processing nozzle 7 can be formed by cutting the tip side of a cylindrical nozzle formed of, for example, the resin material.

  On the other hand, a stepped portion 503 that can contact the stepped surface 7 b of the peripheral processing nozzle 7 is provided on the inner wall of the through hole 502 of the blocking plate 5. The step portion 503 has an annular contact surface 5a that contacts the peripheral processing nozzle 7 when the peripheral processing nozzle 7 is positioned at the processing position P2. The contact surface 5a is formed substantially parallel to the facing surface 501 of the blocking plate 5, that is, substantially parallel to the substrate surface Wf, and can come into surface contact with the step surface 7b of the peripheral edge processing nozzle 7. . For this reason, compared with the case where the step surface 7b and the contact surface 5a are not formed in parallel with the substrate surface Wf, the outer peripheral portion of the peripheral processing nozzle 7 and the inner wall of the through hole 502 can be easily processed, and the peripheral processing nozzle 7 is processed. When positioning to the position P2, the positional accuracy of the nozzle with respect to the board | substrate W can be improved. Further, when the peripheral processing nozzle 7 is positioned at the processing position P2, the stepped surface 7b of the peripheral processing nozzle 7 is pressed against the contact surface 5a of the blocking plate 5, so that the peripheral processing nozzle 7 contacts the blocking plate 5. It is fixed and can be positioned stably at the processing position P2.

  FIG. 6 is a cross-sectional view for explaining the relationship between the outer diameter of the peripheral processing nozzle 7 and the hole diameter of the through hole 502. The diameter of the through hole 502 is formed larger than the outer diameter of the peripheral processing nozzle 7, and the peripheral processing nozzle 7 can be moved in the horizontal direction inside the through hole 502. Specifically, by driving the swing drive source 731 of the drive mechanism 73, two positions different from each other in the horizontal direction as the processing position P2, that is, a chemical solution can be supplied to the surface peripheral portion TR of the substrate W. Etching position P21 (FIG. 6 (a)) and rinsing position P22 (FIG. 6 (FIG. 6 (A)) that can supply the rinsing liquid to the surface peripheral portion TR of the substrate W and are located radially inside the substrate W with respect to the etching position P21. It is possible to position the peripheral edge processing nozzle 7 at b)). Instead of rocking by the rocking drive source 731, the peripheral edge processing nozzle 7 may be moved linearly in the horizontal direction to be positioned at the etching position P21 and the rinse position P22.

  The etching position P21 is located radially outward of the substrate W (rightward in the figure) in the internal space of the through hole 502, while the rinse position P22 is radially inward of the substrate W (same as in the figure). (Left direction in the figure). The hole diameter of the through hole 502 is preferably larger by about 1 to 2 mm than the outer diameter of the peripheral edge processing nozzle 7, and the rinse position P22 is, for example, 0.2 to 0. 0 relative to the etching position P21. It is set so as to be located on the inner side in the radial direction of the substrate W by 5 mm.

  The difference (L2-L1) between the diameter (outer diameter) L1 of the body 703 on the nozzle front end side and the hole diameter L2 of the through-hole 502 is equal to the diameter (outer diameter) B1 of the body 704 on the nozzle rear end side. The through hole 502 is formed to be larger than the difference (B2−B1) between the hole 502 and the hole diameter B2. For this reason, even when the peripheral processing nozzle 7 and the inner wall of the through hole 502 slide, the sliding occurs between the body 704 on the nozzle rear end side and the inner wall of the through hole 502. Become. Therefore, even if sliding occurs, the position is relatively far from the substrate W, so that the effect of particles generated by sliding on the process is compared with the case where particles are generated near the substrate W. Can be reduced. In this case, the discharge position of the peripheral processing nozzle 7 is changed between the etching position P21 and the rinse position P22 between the difference (B2-B1) between the diameter of the body 704 on the nozzle rear end side and the hole diameter L2 of the through hole 502. Can be changed.

  Here, from the viewpoint of avoiding sliding between the peripheral processing nozzle 7 and the through hole 502, the larger the hole diameter of the through hole 502 is, the better the outer diameter of the peripheral processing nozzle 7, but the increase of the hole diameter is opposite to the blocking plate 5. The area of the surface 501 is reduced, the atmosphere blocking effect is reduced, and the risk of occurrence of problems such as rebound of the processing liquid due to the through hole 502 is increased. Therefore, by setting the body diameter of the peripheral processing nozzle 7 and the hole diameter of the through hole 502 as described above, it is possible to suppress problems caused by the through hole 502 while preventing adverse effects on the process due to particles. .

  Further, a gas introduction part 504 is opened on the inner wall of the through hole 502 of the blocking plate 5, so that nitrogen gas can be supplied from the gas introduction part 504 to the internal space of the through hole 502. The gas introduction part 504 communicates with the gas supply unit 25 via a gas circulation space 505 formed inside the blocking plate 5. Therefore, when nitrogen gas is pumped from the gas supply unit 25 in accordance with an operation command from the control unit 4, nitrogen gas is supplied to the internal space of the through hole 502, and the peripheral processing nozzle 7 is moved to the separation position P1 (FIG. 1). In the state moved to the position indicated by the broken line, that is, in the state where the peripheral edge processing nozzle 7 is not inserted into the through hole 502, nitrogen gas is ejected from both the upper and lower openings of the through hole 502.

  The gas introduction part 504 is opened with respect to the contact surface 5a formed on the inner wall of the through-hole 502 in a direction away from the substrate W, that is, on the opposite side to the direction in which the substrate W is positioned around the contact surface 5a. ing. For this reason, when the peripheral processing nozzle 7 is positioned at the processing position P2, the gas flow path to the substrate W side is blocked by the contact between the step surface 7b of the peripheral processing nozzle 7 and the contact surface 5a. Nitrogen gas is prevented from being ejected from the through hole 502 into the space SP sandwiched between the substrate surface Wf and the facing surface 501 beyond the contact portion. Note that the nitrogen gas introduced into the through-hole 502 via the gas introduction unit 504 is discharged from the upper side of the through-hole 502, that is, from the opening on the opposite side of the substrate W.

  Next, the operation of the substrate processing apparatus configured as described above will be described. FIG. 7 is a flowchart showing the operation of the substrate processing apparatus of FIG. FIG. 8 is a diagram schematically showing the operation of the substrate processing apparatus of FIG. In this apparatus, when the substrate W on which the thin film TF such as a metal layer is formed on the surface Wf of the substrate W is loaded and placed on the spin base 15 with the thin film formation surface facing upward, the control unit 4 is Each part of the apparatus is controlled as follows to perform a bevel etching process (etching process + rinsing process + drying process) on the substrate W. When the substrate W is transported, the blocking plate 5 is in a retracted position above the spin chuck 1 to prevent interference with the substrate W. Further, the substrate W to be carried in may be supported by all the support pins F1 to F12 and S1 to S12, or supported only by the first support pin group including the support pins F1 to F12, or the support pin S1. You may make it support only by the 2nd support pin group which consists of -S12.

  When the unprocessed substrate W is placed on the support pins F1 to F12 and S1 to S12, the control unit 4 lowers the blocking plate 5 to the opposing position and arranges it close to the substrate W (step S1). Then, nitrogen gas is discharged from the gas outlet 506 and nitrogen gas is supplied from the gas supply path 32 toward the center of the substrate surface Wf (step S2). As a result, the internal pressure of the space SP formed between the opposing surface 501 of the blocking plate 5 and the substrate surface Wf is increased, and the substrate W contacts the lower surface (back surface Wb) of the support pins F1 to F12, S1. It is pressed by S12 and held on the spin base 15. Further, the substrate surface Wf is covered in a state of being very close to the facing surface 501 of the blocking plate 5, so that the substrate surface Wf is reliably blocked from the external atmosphere around the substrate W.

  Next, the control unit 4 operates the drive mechanism 73 to move the peripheral processing nozzle 7 from the separation position P1 to the processing position P2. Here, first, the peripheral processing nozzle 7 is positioned at the etching position P21 as the processing position P2 (step S3). Specifically, the peripheral processing nozzle 7 is moved to a position above the through hole 502 of the blocking plate 5 along the horizontal direction by the operation of the swing driving source 731, and the peripheral processing nozzle 7 is moved by the operation of the lifting drive source 732. The nozzle tip surface 7 a is lowered and inserted into the through hole 502 until the nozzle tip surface 7 a is flush with the opposing surface 501 of the blocking plate 5. Since the through hole 502 is formed larger than the outer diameter of the peripheral processing nozzle 7, it is possible to prevent particles from being generated by sliding between the peripheral processing nozzle 7 and the inner wall of the through hole 502. Further, when the peripheral processing nozzle 7 is inserted into the through hole 502, the step surface 7b formed on the outer shape of the peripheral processing nozzle 7 and the contact surface 5a formed on the inner wall of the through hole 502 come into contact with each other. The peripheral edge processing nozzle 7 is pressed against the blocking plate 5 (stepped portion 503) toward the substrate W, that is, vertically downward. As a result, the peripheral processing nozzle 7 is fixed in contact with the blocking plate 5 and is stably positioned at the processing position P2 (etching position P21).

  Subsequently, the control unit 4 rotates the substrate W by controlling the chuck rotation driving mechanism 13 and rotating the spin base 15 with the blocking plate 5 stopped (step S4). At this time, the substrate W pressed by the support pins F1 to F12 and S1 to S12 is held on the spin base 15 by the frictional force generated between the support pins F1 to F12 and S1 to S12 and the lower surface of the substrate W. It will rotate with the spin base 15.

  The gas supplied to the space SP sandwiched between the substrate surface Wf and the facing surface 501 flows evenly radially outward about the rotation axis J by the centrifugal force accompanying the rotation of the substrate W, and is discharged out of the substrate. Go. Here, nitrogen gas also flows into the through hole 502 via the gas introduction part 504, but the flow path to the substrate W side is a contact surface formed on the step surface 7 b of the peripheral processing nozzle 7 and the inner wall of the through hole 502. 5a, the nitrogen gas does not enter the space SP from the through hole 502, and the gap between the inner wall of the through hole 502 and the peripheral processing nozzle 7 (the barrel 704 on the nozzle rear end side). It escapes from above the blocking plate 5. For this reason, nitrogen gas enters the space SP in a non-uniform manner with respect to the rotation axis J from one through hole 502 formed in the peripheral edge portion of the blocking plate 5 and flows evenly radially outward about the rotation axis J. It is possible to prevent disturbance of the air flow.

  In this state, a chemical liquid suitable for the etching process is pumped from the chemical liquid supply unit 22 to the peripheral edge processing nozzle 7, and the chemical liquid is supplied as a processing liquid to the surface peripheral edge TR (FIG. 8A). The chemical solution discharged toward the outside in the radial direction of the substrate W receives centrifugal force due to the rotation of the substrate W, flows toward the periphery of the substrate W, and flows down along the end surface of the substrate. As a result, the chemical solution is supplied to the entire surface peripheral portion TR and etched. At this time, the peripheral processing nozzle 7 is positioned at the processing position P <b> 2 (etching position P <b> 21) while being pressed against the stepped portion 503 of the blocking plate 5, so that the peripheral processing nozzle 7 is fixed to the blocking plate 5. The nozzle position, particularly the position in the vertical direction (height direction) is determined accurately. For this reason, it is possible to prevent the discharge position from the peripheral processing nozzle 7 from becoming unstable due to the influence of airflow, vibration, and the like accompanying the rotation of the substrate W. That is, the nozzle arm 71 formed of a material having a relatively low rigidity such as resin and the small-diameter peripheral edge processing nozzle 7 fixed thereto are easily affected by airflow, vibration, etc. Further, when the peripheral edge processing nozzle 7 is pressed against the blocking plate 5 which is not easily affected by vibration or the like on the mass, arrangement conditions, etc., the discharge position is prevented from fluctuating.

  In particular, in this embodiment, since the chemical solution is discharged obliquely toward the outside in the radial direction of the substrate W, not in the vertical direction, the distance between the substrate W and the peripheral processing nozzle 7 is made constant. It is possible to prevent the peripheral etching width EH from fluctuating. Further, when the nozzle tip surface 7 a is displaced above the facing surface 501, it is possible to prevent the chemical liquid discharged from the peripheral processing nozzle 7 from hitting the inner wall of the through-hole 502 and causing rebound. As a result, it is possible to avoid etching of the non-process region NTR other than the surface peripheral portion TR.

  Further, in this embodiment, since there is no holding member such as a chuck pin that holds the substrate W in contact with the outer peripheral end portion of the substrate W, there are a portion held by the holding member and a portion not held by the holding member. There is no difference in the amount of the chemical solution circulated, and the chemical solution can be uniformly circulated to the peripheral portion of the substrate surface Wf. In addition, since there is no factor that disturbs the airflow in the vicinity of the outer peripheral edge of the substrate W, the entrainment of the mist-like chemical liquid on the substrate surface Wf side is reduced. Further, the nitrogen gas supplied from the gas supply path 32 and the gas jet port 506 prevents the chemical liquid from entering the central portion of the substrate surface Wf. Therefore, unwanted substances are uniformly etched away from the surface peripheral portion TR over the entire periphery with a constant peripheral etching width EH (step S5).

  Furthermore, since the peripheral processing nozzle 7 is inserted into the through hole 502 of the blocking plate 5, the chemical solution is blocked by the opposing surface 501 of the blocking plate 5 even when the chemical solution is scattered and bounces back toward the peripheral processing nozzle 7. Thus, the chemical solution does not adhere to the periphery (side surface) of the peripheral processing nozzle 7. For this reason, it is possible to prevent the chemical solution from dropping from the peripheral processing nozzle 7 and adhering to the substrate W or the substrate peripheral member when the nozzle is moved. Therefore, it is not necessary to clean the peripheral processing nozzle 7, and the throughput of the apparatus can be improved.

  When the etching process on the surface peripheral portion TR is completed, the control unit 4 stops the feeding of the chemical liquid to the peripheral processing nozzle 7 and moves the peripheral processing nozzle 7 from the etching position P21 to the rinse position P22 (step S6). At this time, if the peripheral processing nozzle 7 is moved in the horizontal direction as it is, particles due to sliding are generated between the stepped surface 7b of the peripheral processing nozzle 7 and the contact surface 5a of the blocking plate that are in contact with each other. Therefore, it is desirable that the peripheral edge processing nozzle 7 is slightly raised to separate the step surface 7b and the contact surface 5a from each other and then moved in the horizontal direction to be positioned at the rinse position P22.

  When the peripheral processing nozzle 7 is positioned at the rinsing position P22, the rinsing liquid is pumped from the rinsing liquid supply unit 23 to the peripheral processing nozzle 7, and the rinsing liquid is supplied to the surface peripheral portion TR as the processing liquid (FIG. 8 ( b)). Here, the rinsing liquid discharged from the peripheral processing nozzle 7 receives the centrifugal force accompanying the rotation of the substrate W, flows outward in the radial direction of the substrate W, and is discharged out of the substrate. By being positioned at the rinse position P22 located on the inner side in the radial direction of the substrate W with respect to the position P21, the rinse liquid can be supplied in a range including the chemical liquid supply range and wider than the chemical liquid supply range. For this reason, the chemical | medical solution adhering to the interface of surface peripheral part TR (process area | region) and the non-process area | region NTR of the surface center part can be easily washed away with a rinse liquid (step S7).

  Thus, when the rinsing process for the surface peripheral portion TR is completed, the control unit 4 stops the pumping of the rinsing liquid to the peripheral processing nozzle 7, and the peripheral processing nozzle 7 is extracted from the through hole 502 and separated from the surface peripheral portion TR. Move to the separation position P1 (step S8). At this time, nitrogen gas introduced into the through-hole 502 from the gas introduction part 504 is ejected from the upper and lower openings of the blocking plate 5 in the vertical direction of the through-hole 502 (FIG. 8C). For this reason, even when the peripheral processing nozzle 7 is extracted from the through hole 502, the processing liquid is prevented from entering the through hole 502 and splashing back toward the substrate surface Wf.

  Subsequently, the control unit 4 controls the shield plate rotation drive mechanism 52 to rotate the shield plate 5 in the same direction at substantially the same rotational speed as that of the spin base 15 (step S9). Thereafter, the processing liquid is supplied from the lower surface processing nozzle 2 to the back surface Wb of the substrate W rotated together with the spin base 15, and the back surface cleaning process is performed on the back surface (non-device forming surface) Wb of the substrate W (step S10). ). Specifically, the chemical liquid and the rinse liquid are sequentially supplied from the lower surface processing nozzle 2 toward the central portion of the substrate back surface Wb, whereby the entire back surface and the substrate end surface portion connected to the back surface Wb are cleaned. By rotating the blocking plate 5 together with the substrate W in this way, it is possible to prevent the processing liquid adhering to the blocking plate 5 from adversely affecting the process, and between the substrate W and the blocking plate 5 there is an excess accompanying the rotation. Generation | occurrence | production of an airflow can be suppressed and inclusion of the process liquid to the substrate surface Wf can be prevented.

  Here, during the cleaning process, the support pins F1 to F12 and S1 to S12 are separated from the substrate back surface Wb at least once to process the contact portions of the support pins F1 to F12 and S1 to S12 and the substrate back surface Wb. The part can be washed by wrapping in the liquid. For example, during the cleaning process, the first support from the state where the substrate W is supported by both the first support pin group including the support pins F1 to F12 and the second support pin group including the support pins S1 to S12. The state is switched to a state in which the substrate W is supported only by the pin group, and the processing liquid is introduced into the contact portion between the substrate W and the second support pin group. Then, after shifting to a state in which the substrate W is supported by both the support pin groups, the substrate W is switched to a state in which the substrate W is supported only by the second support pin group, and the contact between the substrate W and the first support pin group is changed. Allow the processing solution to wrap around the part. As a result, the entire back surface can be cleaned by causing the processing liquid to wrap around all the contact portions between the substrate W and the support pins F1 to F12 and S1 to S12.

  Thus, when the back surface cleaning process is completed, the control unit 4 increases the rotation speed of the motors of the chuck rotation driving mechanism 13 and the blocking plate rotation driving mechanism 52 to rotate the substrate W and the blocking plate 5 at high speed, thereby drying the substrate W. Execute (Step S11). At this time, nitrogen gas is supplied to the front and back surfaces of the substrate W by supplying nitrogen gas also from the gas supply path 24 together with the nitrogen gas supply to the substrate surface Wf described above. Thereby, the drying process of the front and back of the board | substrate W is accelerated | stimulated.

  When the drying process of the substrate W is completed, the control unit 4 controls the blocking plate rotation drive mechanism 52 to stop the rotation of the blocking plate 5 (step S12), and controls the chuck rotation drive mechanism 13 to rotate the substrate W. Is stopped (step S13). Then, by stopping the supply of nitrogen gas from the gas supply path 32 and the gas outlet 506, the pressing and holding of the substrate W to the support pins F1 to F12 and S1 to S12 is released (step S14). Thereafter, the blocking plate 5 is raised and the processed substrate W is unloaded from the apparatus (step S15).

  As described above, according to this embodiment, the substrate surface Wf can be reliably protected from the external atmosphere by arranging the blocking plate 5 so as to face and oppose the substrate surface Wf. Moreover, since the through-hole 502 penetrating in the vertical direction is formed in the blocking plate 5 at a position facing the surface peripheral portion TR (processing region), the peripheral edge of the surface can be obtained by inserting the peripheral processing nozzle 7 into the through-hole 502. It can be arranged to face the part TR. Therefore, while the substrate surface Wf is covered by the blocking plate 5, the chemical atmosphere or mist-like processing liquid is prevented from adhering to the non-processing region NTR inside the surface peripheral portion TR, but directly from the peripheral processing nozzle 7. By supplying the processing liquid to the surface peripheral portion TR, the peripheral etching width EH can be accurately processed.

  Moreover, since the hole diameter of the through hole 502 is formed larger than the outer diameter of the peripheral processing nozzle 7, when the peripheral processing nozzle 7 is inserted into and removed from the through hole 502, the peripheral processing nozzle 7 and the through hole 502 The sliding with the inner wall is prevented. As a result, it is possible to prevent particles generated during sliding from adhering to the substrate surface Wf and adversely affecting the process. In particular, the nozzle drive parts such as the peripheral processing nozzle 7 and the nozzle arm 71 are made of a resin material and have a side surface on which it is difficult to ensure the positioning accuracy of the nozzle. By setting the hole diameter, it is possible to effectively prevent the generation of particles.

  Furthermore, while forming the hole diameter of the through-hole 502 larger than the outer diameter of the peripheral processing nozzle 7, the etching position P21 that can supply the chemical solution to the surface peripheral portion TR and the rinse liquid can be supplied to the surface peripheral portion TR. The peripheral edge processing nozzle 7 is selectively positioned at a rinsing position P22 located on the radially inner side of the substrate W with respect to the etching position P21. For this reason, the rinse liquid flows radially outward from the inward position of the substrate W with respect to the chemical liquid supply position, and the rinse liquid supply range can be made wider than the chemical liquid supply range. Thereby, the chemical | medical solution adhering to the interface of surface peripheral part TR (process area | region) and non-process area | region NTR can be easily washed away with a rinse liquid, and the efficiency of a rinse process can be improved, and a rinse defect can be prevented.

  In addition, according to this embodiment, the substrate W is supported by the support pins F1 to F12 and S1 to S12 that are in contact with the substrate back surface Wb, and is formed between the facing surface 501 of the blocking plate 5 and the substrate surface Wf. By supplying nitrogen gas to the space SP, the substrate W is pressed by the support pins F1 to F12 and S1 to S12 and held on the spin base 15. The substrate W is rotated together with the spin base 15 by the frictional force generated between the substrate W and the support pins F1 to F12 and S1 to S12. Therefore, a holding member such as a chuck pin that holds the substrate W in contact with the outer peripheral end of the substrate W can be eliminated. As a result, the treatment liquid supplied to the surface peripheral portion TR does not hit the holding member and bounce off, thereby corroding the non-treatment region NTR at the center of the surface. In addition, since there is no factor that disturbs the airflow near the outer peripheral edge of the substrate W, it is possible to reduce the entrainment of the mist-like processing liquid to the substrate surface side and effectively prevent the processing liquid from adhering to the non-processing region NTR. can do.

  Further, according to this embodiment, the body 703 on the nozzle front end side and the nozzle rear end so that the cross-sectional area of the body 703 on the nozzle front end side is smaller than the cross-sectional area of the body 704 on the nozzle rear end side. The peripheral edge processing nozzle 7 is formed so as to have a step surface 7b between the side body portion 704, and an abutting surface 5a capable of contacting the step surface 7b of the peripheral edge processing nozzle 7 is provided on the inner wall of the through hole 502. Thus, the peripheral processing nozzle 7 is positioned at the processing position P2 by pressing the step surface 7b of the peripheral processing nozzle 7 against the contact surface 5a. Thereby, the peripheral processing nozzle 7 is abutted and fixed to the blocking plate 5, and the peripheral processing nozzle 7 can be stably positioned at the processing position P2. As a result, it is possible to prevent the discharge position of the processing liquid from the peripheral processing nozzle 7 from becoming unstable due to the influence of the air current around the nozzle, the vibration transmitted to the peripheral processing nozzle 7 or the like.

  Further, according to this embodiment, the difference (L2−L1) between the diameter L1 of the body 703 on the nozzle front end side and the hole diameter L2 of the through hole 502 is equal to the diameter B1 of the body 704 on the nozzle rear end side and the through hole. The through hole 502 is formed so as to be larger than the difference (B2−B1) between the hole diameter B2 of 502. For this reason, even when the peripheral processing nozzle 7 and the inner wall of the through hole 502 slide, the sliding occurs between the body 704 on the nozzle rear end side and the inner wall of the through hole 502. Become. In other words, the effect on the process increases as particles are generated closer to the substrate W. However, according to the configuration described above, the position is relatively far from the substrate W even when sliding occurs. Therefore, the influence of particles generated by sliding on the process can be reduced.

  Further, according to this embodiment, the gas introduction part 504 is provided on the inner wall of the through hole 502, and nitrogen gas is introduced from the gas introduction part 504 into the through hole 502. For this reason, when the peripheral processing nozzle 7 is extracted from the through-hole 502, nitrogen gas is ejected from the through-hole 502 and the processing liquid is prevented from entering the through-hole 502. Therefore, it is possible to suppress the rebound of the processing liquid to the substrate surface Wf due to the processing liquid entering the through hole 502.

  Further, according to this embodiment, the gas introduction part 504 is provided on the inner wall of the through hole 502 in a direction away from the substrate W with respect to the contact surface 5a. Therefore, when the peripheral processing nozzle 7 moves to the processing position P2 and is inserted into the through hole 502, the step surface 7b of the peripheral processing nozzle 7 and the contact surface 5a of the blocking plate 5 come into contact with each other. Nitrogen gas is prevented from being ejected from the through hole 502 to the substrate side beyond the contact portion. For this reason, even when particles are generated by sliding between the peripheral processing nozzle 7 and the inner wall of the through hole 502, it is possible to prevent the particles from reaching the substrate surface Wf together with the nitrogen gas. Further, it is possible to prevent the nitrogen gas from leaking into the space SP sandwiched between the substrate W and the blocking plate 5 during the etching process or the rinsing process, disturbing the airflow on the substrate surface Wf, and causing problems such as the splashing of the processing liquid. Is done.

  The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above embodiment, the surface peripheral portion TR is processed as the processing region, but the processing region is not limited to this. For example, an etching process and a rinsing process may be performed on a specific area other than the peripheral edge of the surface as a processing area. Even in this case, when the blocking member having the through hole is arranged to face the substrate surface and the hole diameter of the through hole is formed larger than the outer diameter of the nozzle, the nozzle is inserted into and removed from the through hole. The sliding of the nozzle and the inner wall of the through hole can be prevented. In addition, by inserting a nozzle into the through hole and changing the nozzle position between the etching position and the rinsing position, the chemical solution supply range and the rinsing solution supply range can be made different, and the etching process and the rinsing process can be performed. Can be optimized. For this reason, in the rinsing process, the rinsing liquid supply range can be made wider than the chemical liquid supply range, and the same effect as in the above embodiment can be obtained.

  In the above embodiment, the chemical liquid and the rinse liquid are selectively ejected from one peripheral processing nozzle 7, but the means for supplying the chemical liquid and the rinse liquid to the processing region is not limited to this. For example, when a chemical nozzle dedicated for chemical liquid ejection and a rinse liquid nozzle dedicated for rinsing liquid ejection are respectively provided and etching is performed, the chemical liquid nozzle is driven and positioned at the etching position, while the rinsing process is performed. In this case, the rinsing liquid nozzle may be driven and positioned at the rinsing position. Moreover, you may make it form the separate discharge port and liquid supply path which discharge a chemical | medical solution and a rinse liquid in the inside of one peripheral process nozzle.

  Moreover, in the said embodiment, although the outer diameter of the peripheral process nozzle 7 and the hole diameter of the through-hole 502 are changed with the nozzle front end side (lower part) and the nozzle rear end side (upper part), the shape of a nozzle and a through-hole Is not limited to this. For example, as shown in FIG. 9, without changing the outer diameter of the nozzle 70 and the hole diameter of the through hole 510 between the nozzle front end side (lower part) and the nozzle rear end side (upper part), for example, the same diameter in a cylindrical shape. You may make it form. Even in such a configuration, the inner diameter of the nozzle 70 and the through hole 510 can be reduced when the nozzle 70 is inserted into and removed from the through hole 510 by forming the hole diameter of the through hole 510 larger than the outer diameter of the nozzle 70. Can be prevented from sliding. Further, the chemical solution is supplied to the entire processing region such as the surface peripheral portion TR of the substrate W that rotates by positioning the nozzle 70 at the etching position P21 (FIG. 9A), while the etching processing is performed with respect to the etching position P21. By positioning at the rinse position P22 located on the inner side in the radial direction of the substrate W (FIG. 9B), the chemical solution adhering to the interface between the surface peripheral portion TR and the non-processed region NTR at the center of the surface is sufficiently absorbed by the rinse solution. It is possible to wash away and prevent poor rinsing.

  The present invention supplies a chemical solution as a processing solution to processing regions of various substrates including a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for optical disk, etc. The present invention can be applied to a substrate processing apparatus and method for performing an etching process on a region, supplying a rinsing liquid as a processing liquid to the processed region, and performing a rinsing process on the processing region.

It is a figure showing one embodiment of a substrate processing device concerning this invention. It is the top view which looked at the spin base from the upper part. It is the elements on larger scale which show the structure of a support pin. It is a bottom view of a blocking plate. It is a fragmentary perspective view of the substrate processing apparatus of FIG. It is sectional drawing for demonstrating the relationship between the outer diameter of a periphery process nozzle, and the hole diameter of a through-hole. It is a flowchart which shows operation | movement of the substrate processing apparatus of FIG. It is a figure which shows typically operation | movement of the substrate processing apparatus of FIG. It is a figure which shows the modification of the substrate processing apparatus concerning this invention.

Explanation of symbols

1 ... Spin chuck (substrate holding means)
5 ... Blocking plate (blocking member)
5a ... Contact surface 7 ... Peripheral processing nozzle (nozzle)
7b ... Step surface 13 ... Chuck rotation drive mechanism (substrate rotation means)
15 ... Spin base (rotating member)
25 ... Gas supply unit (gas supply means)
70 ... Nozzle 73 ... Drive mechanism (nozzle drive mechanism)
501 ... Opposite surface 502 ... Through hole 504 ... Gas inlet 506 ... Gas outlet 703 ... Body on the nozzle tip side 704 ... Body on the nozzle rear end side B1 ... Body diameter on the nozzle rear end side B2 ... (after nozzle) Diameter of through hole on end side F1 to F12 ... Support pin (support member)
L1 ... Diameter of the barrel on the nozzle tip side L2 ... Hole diameter of the through hole (on the nozzle tip side) NTR ... Non-processing area P1 ... Separation position P2 ... Processing position P21 ... Etching position P22 ... Rinse position S1 to S12 ... Support pins (support) Element)
TR (surface of substrate) (processing area)
W ... Substrate Wb ... Substrate back surface Wf ... Substrate surface

Claims (8)

A chemical solution is supplied as a processing solution to the processing region of the substrate surface having a processing region and a non-processing region to perform an etching process on the processing region, and a rinsing liquid is applied as a processing solution to the etched processing region. In the substrate processing apparatus for supplying and rinsing the processing region,
Substrate holding means for holding the substrate;
A nozzle for discharging the processing liquid and supplying the processing liquid to a processing region on the surface of the substrate held by the substrate holding means;
A blocking member disposed opposite to the substrate surface and having a through-hole penetrating in the vertical direction,
A nozzle drive mechanism for positioning the nozzle at the processing position where the nozzle can be inserted into the through hole and supplying the processing liquid to the processing region, and at a separation position away from the blocking member;
In the blocking member, the hole diameter of the through hole is formed larger than the outer diameter of the nozzle,
The nozzle driving mechanism includes, as the processing position, an etching position at which a chemical solution can be supplied to the processing area, and a rinsing position at which a rinsing liquid can be supplied to the processing area, and the etching position is different in a horizontal direction A substrate processing apparatus, wherein the nozzle is selectively positioned. Using the peripheral edge of the substrate surface as the processing region, supplying a chemical to the peripheral edge to perform etching, and supplying a rinsing liquid to the peripheral edge of the etched substrate surface to rinse the peripheral edge The substrate processing apparatus according to claim 1, wherein
A substrate rotating means for rotating the substrate held by the substrate holding means;
In the blocking member, the through hole is formed at a position facing the processing region,
The said nozzle drive mechanism is a substrate processing apparatus which positions the said nozzle to the radial inside of the said board | substrate with respect to the said etching position as said rinse position. Gas supply means for supplying gas to a space formed between the substrate surface and the facing surface of the blocking member facing the substrate surface;
The substrate holding means is provided so as to be rotatable about a vertical axis, and is provided upward on the rotating member, and is in contact with the back surface of the substrate so as to be separated from the rotating member and supported. And at least three or more support members
The substrate processing apparatus according to claim 2, wherein the gas supply unit presses the substrate against the support member by supplying a gas to the space via a gas jet port provided on an opposing surface of the blocking member.   The substrate processing apparatus according to claim 1, wherein the blocking member includes a gas introduction portion that is provided on an inner wall of the through hole and introduces a gas into the through hole. The nozzle includes a body portion on the nozzle front end side and a body portion on the nozzle rear end side so that a cross-sectional area of the body portion on the nozzle front end side is smaller than a cross-sectional area of the body portion on the nozzle rear end side. While having a stepped surface in between,
In the blocking member, a contact surface capable of contacting the step surface of the nozzle is provided on the inner wall of the through hole,
The substrate processing apparatus according to claim 1, wherein the nozzle driving mechanism positions the nozzle at the processing position by pressing a stepped surface of the nozzle against a contact surface of the blocking member.   In the blocking member, the through-hole is formed such that a difference between the diameter of the body portion on the nozzle front end side and the diameter of the through-hole is larger than a difference between the diameter of the body portion on the rear end side of the nozzle and the hole diameter of the through-hole. The substrate processing apparatus according to claim 5, wherein the hole is formed.   The said interruption | blocking member is provided in the direction spaced apart from the said board | substrate with respect to the said contact surface in the inner wall of the said through-hole, and has a gas introduction part which introduce | transduces gas into the inside of the said through-hole. Substrate processing equipment. A chemical solution is supplied as a processing solution to the processing region of the substrate surface having a processing region and a non-processing region to perform an etching process on the processing region, and a rinsing liquid is applied as a processing solution to the etched processing region. In the substrate processing method for supplying and rinsing the processing region,
A step of disposing a blocking member having a through-hole penetrating in the vertical direction in close proximity to the substrate;
A step of performing an etching process on the processing region by inserting a nozzle into the through-hole and positioning the etching position at which the chemical solution can be supplied to the processing region and supplying the chemical solution from the nozzle;
The process in which the rinsing liquid can be supplied to the processing region and the etching process is performed by positioning a nozzle at a rinsing position that is different in a horizontal direction from the etching position and supplying the rinsing liquid from the nozzle. And a step of rinsing the region.

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