JP2007141945A5 - - Google Patents

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Publication number
JP2007141945A5
JP2007141945A5 JP2005330242A JP2005330242A JP2007141945A5 JP 2007141945 A5 JP2007141945 A5 JP 2007141945A5 JP 2005330242 A JP2005330242 A JP 2005330242A JP 2005330242 A JP2005330242 A JP 2005330242A JP 2007141945 A5 JP2007141945 A5 JP 2007141945A5
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JP
Japan
Prior art keywords
insulating film
display device
coating type
type insulating
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2005330242A
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Japanese (ja)
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JP2007141945A (en
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Publication date
Application filed filed Critical
Priority to JP2005330242A priority Critical patent/JP2007141945A/en
Priority claimed from JP2005330242A external-priority patent/JP2007141945A/en
Publication of JP2007141945A publication Critical patent/JP2007141945A/en
Publication of JP2007141945A5 publication Critical patent/JP2007141945A5/ja
Abandoned legal-status Critical Current

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Claims (10)

基板と、
半導体層と、
前記基板と前記半導体層との間に形成された塗布型絶縁膜を含む下地層とを有する表示装置であって、前記半導体層は、結晶がラテラル成長した帯状結晶で形成されていることを特徴とする表示装置。 A substrate,
A semiconductor layer;
A display device having a base layer including a coating type insulating film formed between the substrate and the semiconductor layer, wherein the semiconductor layer is formed of a band-like crystal in which crystals are laterally grown. Display device. 前記半導体層はシリコンを含むことを特徴とする請求項１に記載の表示装置。   The display device according to claim 1, wherein the semiconductor layer contains silicon. 前記下地層は、前記塗布型絶縁膜と、堆積型絶縁膜とを含むことを特徴とする請求項１又は２に記載の表示装置。   The display device according to claim 1, wherein the underlayer includes the coating type insulating film and a deposition type insulating film. 前記下地層は、前記基板側から、ＳｉＮを主成分とする塗布型絶縁膜とＳｉＯ2を主成分とする絶縁膜であることを特徴とする請求項１から請求項３の何れか１項に記載の表示装置。 4. The base layer according to claim 1, wherein, from the substrate side, a coating type insulating film containing SiN as a main component and an insulating film containing SiO 2 as a main component are formed from the substrate side. The display device described. 前記下地層は、前記基板側から、ＳｉＮを主成分とする絶縁膜とＳｉＯ2を主成分とする塗布型絶縁膜であることを特徴とする請求項１から請求項３の何れか１項に記載の表示装置。 4. The base layer according to claim 1, wherein the base layer is an insulating film mainly composed of SiN and a coating type insulating film mainly composed of SiO 2 from the substrate side. The display device described. 前記下地層は、前記基板側から、ＳｉＮを主成分とする塗布型絶縁膜とＳｉＯ2を主成分とする塗布型絶縁膜であることを特徴とする請求項１から請求項３の何れか１項に記載の表示装置。 4. The base layer according to claim 1, wherein, from the substrate side, a coating type insulating film mainly composed of SiN and a coating type insulating film mainly composed of SiO 2 are provided. The display device according to item. 前記塗布型絶縁膜は、前記基板に近い側ではＳｉＯx1Ｎy1（但し、ｘ１＜ｙ１）であり、前記半導体結晶に近い側ではＳｉＯx2Ｎy2（但し、ｘ２＜ｙ２）であることを特徴とする請求項１から請求項３の何れか１項に記載の表示装置。 The coating type insulating film is SiO x1 N y1 (where x1 <y1) near the substrate, and SiO x2 N y2 (where x2 <y2) near the semiconductor crystal. The display device according to any one of claims 1 to 3. 前記塗布型絶縁膜は、無機ポリマー材料、ポリシラザン、ポリシラン、シロキサン、ＳｉＯ2系スピン・オン・グラス材料のうちの何れかを用いた絶縁膜であることを特徴とする請求項１から請求項７の何れか１項に記載の表示装置。 The coating type insulating film is an insulating film using any one of an inorganic polymer material, polysilazane, polysilane, siloxane, and a SiO 2 -based spin-on-glass material. The display device according to any one of the above. 前記帯状結晶の前記半導体層は、薄膜トランジスタの能動層であり、
前記帯状結晶の結晶成長方向が、前記薄膜トランジスタのチャネル長の方向と略同一であることを特徴とする請求項１から請求項８の何れか１項に記載の表示装置。 The semiconductor layer of the band crystal is an active layer of a thin film transistor,
9. The display device according to claim 1, wherein a crystal growth direction of the band-like crystal is substantially the same as a channel length direction of the thin film transistor. 前記基板上に、複数の画素を有する表示領域と、前記表示領域を囲む周辺領域とが形成され、前記薄膜トランジスタは、前記周辺領域に形成されることを特徴とする請求項９に記載の表示装置。

The display device according to claim 9, wherein a display region having a plurality of pixels and a peripheral region surrounding the display region are formed on the substrate, and the thin film transistor is formed in the peripheral region. .

JP2005330242A 2005-11-15 2005-11-15 Display device and manufacturing method thereof Abandoned JP2007141945A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005330242A JP2007141945A (en) 2005-11-15 2005-11-15 Display device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005330242A JP2007141945A (en) 2005-11-15 2005-11-15 Display device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JP2007141945A JP2007141945A (en) 2007-06-07
JP2007141945A5 true JP2007141945A5 (en) 2008-12-11

Family

ID=38204502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005330242A Abandoned JP2007141945A (en) 2005-11-15 2005-11-15 Display device and manufacturing method thereof

Country Status (1)

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JP (1) JP2007141945A (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59103457U (en) * 1982-12-28 1984-07-12 セイコーインスツルメンツ株式会社 Glass substrate for thin film semiconductor devices
JPH0616410A (en) * 1991-12-13 1994-01-25 Alps Electric Co Ltd Insulating film and its production
JP2001110802A (en) * 1999-10-06 2001-04-20 Matsushita Electric Ind Co Ltd Method for forming insulation film
JP4296762B2 (en) * 2001-09-14 2009-07-15 ソニー株式会社 Laser irradiation apparatus and semiconductor thin film processing method
JP2004119599A (en) * 2002-09-25 2004-04-15 Seiko Epson Corp Method for manufacturing thin film semiconductor device, thin film semiconductor device electro-optical device, and electronic apparatus
JP2004128421A (en) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd Laser irradiation method, laser irradiation device, and method for manufacturing semiconductor device

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