JP2001110802A - Method for forming insulation film - Google Patents
Method for forming insulation filmInfo
- Publication number
- JP2001110802A JP2001110802A JP28555199A JP28555199A JP2001110802A JP 2001110802 A JP2001110802 A JP 2001110802A JP 28555199 A JP28555199 A JP 28555199A JP 28555199 A JP28555199 A JP 28555199A JP 2001110802 A JP2001110802 A JP 2001110802A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- substrate
- forming
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Liquid Crystal (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ガラスやプラスチ
ック等の基板表面に、例えば酸化珪素や窒化珪素などの
絶縁膜を形成する方法に関する。さらに、それらの絶縁
膜を用いた薄膜デバイスおよびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an insulating film such as silicon oxide or silicon nitride on a surface of a substrate such as glass or plastic. Furthermore, the present invention relates to a thin film device using such an insulating film and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】絶縁膜の形成は、基材に絶縁性、硬度、
化学的耐久性、光学的機能等を付与する目的から広く行
なわれている。その方法には、塗布法、ＰＶＤ法、ＣＶ
Ｄ法、溶射法などがあるが、なかでも塗布法は特殊装置
を要せず、様々な基材の種類、サイズ、形状に対応でき
る汎用性の高い方法である。この塗布法としては、金属
アルコキシドを主原料とする化合物溶液を基材上に塗布
してコーティング膜を作り、それを焼成することにより
金属酸化物からなる絶縁膜を得る方法（いわゆるゾルー
ゲル法）がＳＯＧ（スピン・オン・グラス）などとして
すでに実用化されている。2. Description of the Related Art An insulating film is formed on a substrate by insulating, hardness, or the like.
It is widely used for the purpose of imparting chemical durability, optical function and the like. The methods include coating, PVD, CV
There are D method and thermal spraying method. Among them, the coating method is a highly versatile method that does not require a special device and can cope with various types, sizes and shapes of base materials. As the coating method, there is a method of applying a compound solution containing a metal alkoxide as a main material on a substrate to form a coating film, and baking it to obtain an insulating film made of a metal oxide (so-called sol-gel method). It has already been put to practical use as SOG (spin-on-glass).
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、一般に
ゾル−ゲル法においては、原料として用いられる金属ア
ルコキシド中の有機成分量が比較的多いため、形成され
た絶縁膜の性能上不十分な点も多い。また、上記の材料
を用いて基板上に絶縁膜を形成するには、化合物を熱分
解するために少なくとも３００℃以上、通常は４００℃
〜６００℃の高温が必要でるので、プラスチック基板の
ような熱に弱い基板上に上記の方法で絶縁膜を形成する
ことは困難であった。また、薄膜デバイスに適用できる
ような良好な絶縁性を得るためには、さらに高温に加熱
する必要があることから、ガラス基板のような比較的耐
熱性のある基板であっても、その上に良質な絶縁膜を得
るのは困難であった。However, in general, in the sol-gel method, since the amount of organic components in the metal alkoxide used as a raw material is relatively large, the performance of the formed insulating film is often insufficient. . In addition, in order to form an insulating film on a substrate using the above materials, at least 300 ° C. or more, usually 400 ° C., for thermally decomposing the compound.
Since a high temperature of up to 600 ° C. is required, it has been difficult to form an insulating film on a heat-sensitive substrate such as a plastic substrate by the above method. In addition, in order to obtain good insulating properties applicable to thin film devices, it is necessary to heat the film to a higher temperature. It was difficult to obtain a good quality insulating film.
【０００４】本発明は上記課題を鑑みてなされたもの
で、基板の温度をあまり高くすることなく良質な絶縁膜
を形成できる方法を提供するものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and provides a method for forming a high-quality insulating film without excessively increasing the temperature of a substrate.
【０００５】加えて、その絶縁膜を用いた薄膜デバイス
およびその製造方法を提供する。In addition, a thin film device using the insulating film and a method for manufacturing the same are provided.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に、本発明の絶縁性薄膜の製造方法は、シリコン化合物
ポリマーを含んだ溶液を基板上に塗布して、前記ポリマ
ーの塗布膜を形成する工程と、前記塗布膜を紫外光照射
により加熱して、絶縁膜に転化する工程とを有する。In order to solve the above-mentioned problems, a method of manufacturing an insulating thin film of the present invention comprises applying a solution containing a silicon compound polymer onto a substrate to form a coating film of the polymer. And a step of heating the coating film by ultraviolet light irradiation to convert the coating film into an insulating film.
【０００７】前記構成においては、シリコン化合物ポリ
マーが、Si−N結合またはSi−C結合を有することが望ま
しい。In the above structure, the silicon compound polymer preferably has a Si—N bond or a Si—C bond.
【０００８】前記構成においてはまた、絶縁膜が酸化珪
素、窒化珪素、炭化珪素から選ばれる１種、または２種
以上が組み合わされた複合化合物、あるいはそれらに金
属元素が組み合わされた複合化合物であることが望まし
い。[0008] In the above structure, the insulating film may be a compound compound of one or more selected from silicon oxide, silicon nitride, and silicon carbide, or a compound compound of a combination thereof and a metal element. It is desirable.
【０００９】前記構成においては、紫外光照射を、酸素
を含む雰囲気下で行なうことにより、シリコン化合物ポ
リマー塗布膜を酸化珪素薄膜に転化することが望まし
い。In the above structure, it is desirable to convert the silicon compound polymer coating film into a silicon oxide thin film by irradiating ultraviolet light in an atmosphere containing oxygen.
【００１０】前記構成においてはまた、紫外光の光源が
エキシマレーザーであることが望ましい。In the above structure, it is preferable that the ultraviolet light source is an excimer laser.
【００１１】本発明の薄膜デバイスは、ガラス基板上に
複数の薄膜を積層して構成され、上記の本発明の絶縁膜
形成手段で形成された絶縁性薄膜を少なくとも1層含ん
で構成されている。The thin film device of the present invention is formed by laminating a plurality of thin films on a glass substrate, and includes at least one insulating thin film formed by the above-mentioned insulating film forming means of the present invention. .
【００１２】本発明の薄膜デバイスの製造方法は、ガラ
ス基板上に複数の薄膜を積層してなる薄膜デバイスの製
造方法において、請求項１〜５に記載の方法で絶縁膜を
形成する工程を含む。A method for manufacturing a thin film device according to the present invention is a method for manufacturing a thin film device in which a plurality of thin films are stacked on a glass substrate, the method including a step of forming an insulating film by the method according to any one of claims 1 to 5. .
【００１３】以上の構成においては、紫外光照射により
シリコン化合物ポリマー塗布膜から酸化珪素や窒化珪素
からなる絶縁膜を得るものである。このとき、塗布膜は
加熱され分解反応が起こるが、その下の基板の温度はあ
まり上がることはない。すなわち、耐熱性の低い基板へ
の絶縁膜形成を可能にする。さらに、ガラス基板上へ形
成した薄膜デバイスに適用を可能にする。In the above arrangement, an insulating film made of silicon oxide or silicon nitride is obtained from a silicon compound polymer coating film by irradiation with ultraviolet light. At this time, the coating film is heated to cause a decomposition reaction, but the temperature of the underlying substrate does not rise so much. That is, an insulating film can be formed on a substrate having low heat resistance. Further, the present invention can be applied to a thin film device formed on a glass substrate.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態につい
て、図面を参照しながら詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【００１５】（実施の形態１：絶縁膜の形成方法）図１
は本発明における絶縁膜の形成方法の一実施形態を模式
的に示した図である。基板１１上に、シリコン化合物ポ
リマーを含む溶液を塗布して塗布膜１２を形成し、次に
紫外光を照射して塗布膜１２を絶縁膜１３に転化する工
程を示している。(Embodiment 1: Method for Forming Insulating Film) FIG.
FIG. 2 is a view schematically showing one embodiment of a method for forming an insulating film according to the present invention. A step of applying a solution containing a silicon compound polymer on a substrate 11 to form a coating film 12 and then irradiating ultraviolet light to convert the coating film 12 to an insulating film 13 is shown.
【００１６】シリコン化合物ポリマーとしては、例えば
Ｓｉ−Ｎ結合や、Ｓｉ−Ｃ結合を有するポリシラザン系
化合物、ポリカルボシラン系化合物を用いることができ
る。これらを各種有機溶剤に溶解させた溶液を塗布液と
して用いる。As the silicon compound polymer, for example, a polysilazane-based compound or a polycarbosilane-based compound having a Si—N bond or a Si—C bond can be used. A solution in which these are dissolved in various organic solvents is used as a coating solution.
【００１７】なお、良質な絶縁膜を得るためには前記の
シリコン化合物ポリマーが含む有機成分が少ないほうが
好ましく、より望ましくは無機ポリマーであればよい。In order to obtain a high-quality insulating film, it is preferable that the silicon compound polymer contains a small amount of organic components, more preferably an inorganic polymer.
【００１８】これらのシリコン化合物ポリマーを含む溶
液をスピンコート等の手段を用いて基板に塗布し、塗布
膜を形成する。A solution containing these silicon compound polymers is applied to a substrate by means such as spin coating to form a coating film.
【００１９】塗布膜をよく乾燥させた後、紫外光を照射
する。紫外光の光源としては、エキシマレーザ、エキシ
マランプ、水銀ランプ等を用いることができるが、いず
れにしても塗布膜を形成するシリコン化合物ポリマーに
紫外光が照射されることにより、酸化珪素や窒化珪素な
どに転化されて絶縁膜が形成される。光照射の強度は、
用いるシリコン化合物の種類、基板の耐熱性、所望の絶
縁膜性能によって異なるが、充分にシリコン化合物が分
解されて絶縁膜に転化され、かつ基板温度があまり高く
ならないような条件（光強度、時間、回数）を選ぶこと
が重要である。After the coating film is thoroughly dried, it is irradiated with ultraviolet light. As a light source of ultraviolet light, an excimer laser, an excimer lamp, a mercury lamp, or the like can be used. In any case, the silicon compound polymer forming the coating film is irradiated with ultraviolet light, so that silicon oxide or silicon nitride can be used. And an insulating film is formed. The intensity of light irradiation is
Depending on the type of silicon compound used, the heat resistance of the substrate, and the desired insulating film performance, conditions (light intensity, time, light intensity, time, It is important to choose the number of times).
【００２０】以下、実施の形態１について、具体的実施
例をあげて説明する。Hereinafter, the first embodiment will be described with reference to specific examples.
【００２１】（実施例１）ぺルヒドロポリシラザン溶液
（２０重量％キシレン溶液、東燃株式会社製）をガラス
基板上にスピンコートし、ぺルヒドロポリシラザンの塗
布膜を形成した。充分に乾燥させた後、酸素を含む雰囲
気下でエキシマレーザによる光照射をおこない、酸化珪
素膜を形成した。用いたエキシマレーザはＸｅＣｌで、
その波長は３０８ｎｍである。パルス周波数は数１０〜
数１００Ｈｚ、例えば３００Ｈｚ、エネルギー密度は３
００ｍＪ／ｃｍ2を使用した。このときの周囲温度は室
温であった。Example 1 A perhydropolysilazane solution (20% by weight xylene solution, manufactured by Tonen Co., Ltd.) was spin-coated on a glass substrate to form a perhydropolysilazane coating film. After drying sufficiently, light irradiation with an excimer laser was performed in an atmosphere containing oxygen to form a silicon oxide film. The excimer laser used was XeCl,
Its wavelength is 308 nm. The pulse frequency is several tens
Several hundred Hz, for example 300 Hz, energy density is 3
00 mJ / cm 2 was used. At this time, the ambient temperature was room temperature.
【００２２】（実施例２）実施例１と同様にしてガラス
基板上にぺルヒドロポリシラザンの塗布膜を形成した。
乾燥させた後、低圧水銀ランプ（主波長253nm、４５０
Ｗ×４本）による光照射を２４時間おこない、酸化珪素
膜を形成した。Example 2 A coating film of perhydropolysilazane was formed on a glass substrate in the same manner as in Example 1.
After drying, a low-pressure mercury lamp (main wavelength 253 nm, 450
(W × 4 wires) was irradiated for 24 hours to form a silicon oxide film.
【００２３】（実施の形態２：薄膜デバイス）図２は本
発明の薄膜デバイスの一実施の形態として、ガラス基板
上に形成した薄膜トランジスタ（以下、ＴＦＴと称す
る。）を模式的に示した断面図である。以下、図２を参
照しながら具体的に本実施の形態を説明する。(Embodiment 2: Thin Film Device) FIG. 2 is a cross-sectional view schematically showing a thin film transistor (hereinafter, referred to as a TFT) formed on a glass substrate as one embodiment of the thin film device of the present invention. It is. Hereinafter, this embodiment will be specifically described with reference to FIG.
【００２４】本実施の形態では、本発明を液晶駆動用ア
レイ基板に用いられるトップゲート型ＴＦＴに適用した
例を示している。ガラス基板２１上に、例えば酸化珪素
や窒化珪素からなるアンダーコート層２２、その上に半
導体層２３、酸化珪素からなるゲート絶縁膜２４、金属
膜からなるゲート電極２５、及び酸化珪素からなる層間
絶縁膜２６が順に積層されて構成されている。さらに、
金属膜からなるソース・ドレイン電極２７が設けられ、
それらを覆って例えば窒化珪素からなるパッシベーショ
ン膜２８が形成されている。In this embodiment, an example is shown in which the present invention is applied to a top gate type TFT used for an array substrate for driving a liquid crystal. On a glass substrate 21, for example, an undercoat layer 22 made of silicon oxide or silicon nitride, a semiconductor layer 23, a gate insulating film 24 made of silicon oxide, a gate electrode 25 made of a metal film, and an interlayer insulating film made of silicon oxide The film 26 is configured by being sequentially laminated. further,
A source / drain electrode 27 made of a metal film is provided,
A passivation film 28 made of, for example, silicon nitride is formed to cover them.
【００２５】実施例として、アンダーコート層に本発明
の絶縁膜を適用した一例を記述する。As an example, an example in which the insulating film of the present invention is applied to an undercoat layer will be described.
【００２６】（実施例３）アンダーコート層への適用 アンダーコート層はガラス基板に含まれる不純物が溶出
するのを防ぐバリアとして機能するもので、その厚みは
２００〜１０００ｎｍ程度であることが多い。ガラス基
板上に、ぺルヒドロポリシラザン溶液（２０重量％キシ
レン溶液、東燃株式会社製）をガラス基板上にスピンコ
ートし、ぺルヒドロポリシラザンの塗布膜を形成した。
充分に乾燥させた後、酸素を含む雰囲気下でエキシマレ
ーザによる光照射をおこない、酸化珪素からなるアンダ
ーコート層を形成した。用いたエキシマレーザはＸｅＣ
ｌで、その波長は３０８ｎｍである。パルス周波数は３
００Ｈｚ、エネルギー密度は３００ｍＪ／ｃｍ2を使用
した。このときの周囲温度は室温であった。Example 3 Application to Undercoat Layer The undercoat layer functions as a barrier for preventing impurities contained in the glass substrate from being eluted, and its thickness is often about 200 to 1000 nm. A perhydropolysilazane solution (20% by weight xylene solution, manufactured by Tonen Co., Ltd.) was spin-coated on the glass substrate to form a perhydropolysilazane coating film.
After sufficient drying, light irradiation with an excimer laser was performed in an atmosphere containing oxygen to form an undercoat layer made of silicon oxide. The excimer laser used was XeC
At 1, its wavelength is 308 nm. The pulse frequency is 3
00 Hz and an energy density of 300 mJ / cm 2 were used. At this time, the ambient temperature was room temperature.
【００２７】なお、本実施例ではアンダーコート層の組
成を酸化珪素としたが、窒化珪素、または酸化珪素と窒
化珪素の混成膜でもよい。その際には、例えば窒素雰囲
気下でエキシマレーザ照射をおこなうことにより、窒化
珪素膜を得ることができる。In this embodiment, the composition of the undercoat layer is silicon oxide. However, silicon nitride or a mixed film of silicon oxide and silicon nitride may be used. At that time, for example, a silicon nitride film can be obtained by performing excimer laser irradiation in a nitrogen atmosphere.
【００２８】また、光照射の光源として、本実施の形態
ではエキシマレーザを用いたが、本発明はこれに限定さ
れるものではない。Although an excimer laser is used in this embodiment as a light source for light irradiation, the present invention is not limited to this.
【００２９】以上の実施例では、アンダーコート層とし
て本発明の絶縁膜を適用する例を記述したが、層間絶縁
膜、パッシベーション膜、その他の絶縁膜に適用する際
も同様の方法で形成することができる。In the above embodiment, an example in which the insulating film of the present invention is applied as an undercoat layer has been described. However, when the insulating film is applied to an interlayer insulating film, a passivation film, and other insulating films, the same method is used. Can be.
【００３０】上記の実施の形態では、薄膜デバイスとし
てＴＦＴについて説明したが、本発明はこれに限定され
るものではなく、他のデバイスに対しても同様に適用で
きる。In the above embodiment, the TFT is described as a thin film device. However, the present invention is not limited to this, and can be similarly applied to other devices.
【００３１】[0031]
【発明の効果】本発明の構成によれば、ガラスやプラス
チック基板表面に、酸化珪素や窒化珪素からなる絶縁膜
を比較的低い温度で形成できる。よって、耐熱性の低い
基板にも絶縁膜を形成できる。According to the structure of the present invention, an insulating film made of silicon oxide or silicon nitride can be formed on a glass or plastic substrate surface at a relatively low temperature. Therefore, an insulating film can be formed even on a substrate having low heat resistance.
【図１】絶縁膜の形成工程を模式的に示した図FIG. 1 is a diagram schematically showing a process of forming an insulating film.
【図２】実施の形態２の薄膜デバイス（ＴＦＴ）を模式
的に示した断面図FIG. 2 is a cross-sectional view schematically showing a thin-film device (TFT) according to a second embodiment.
１１ 基板 １２ 塗布膜 １３ 絶縁膜 ２１ ガラス基板 ２２ アンダーコート層 ２３ 半導体層 ２４ ゲート絶縁膜 ２５ ゲート電極 ２６ 層間絶縁膜 ２７ ソース・ドレイン電極 ２８ パッシベーション膜 DESCRIPTION OF SYMBOLS 11 Substrate 12 Coating film 13 Insulating film 21 Glass substrate 22 Undercoat layer 23 Semiconductor layer 24 Gate insulating film 25 Gate electrode 26 Interlayer insulating film 27 Source / drain electrode 28 Passivation film
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/318 Ｈ０１Ｌ 21/318 Ｂ 29/786 Ｇ０２Ｆ 1/1333 ５０５ // Ｇ０２Ｆ 1/1333 ５０５ Ｃ０８Ｌ 83:04 Ｃ０８Ｌ 83:04 Ｈ０１Ｌ 29/78 ６１９Ａ ６２６Ｃ Ｆターム(参考） 2H090 HB03X HB04X HC05 HC16 HD02 JB02 JB03 LA04 4F073 AA32 BA33 BB01 CA46 CA62 5F058 AA10 AC03 AF04 AG09 BB07 BC02 BC08 BF46 BH03 BH17 5F110 AA17 BB01 CC01 DD01 DD02 DD12 DD13 DD14 DD15 DD24 DD25 EE02 FF02 GG02 HL02 NN02 NN03 NN23 NN24 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/318 H01L 21/318 B 29/786 G02F 1/1333 505 // G02F 1/1333 505 C08L 83: 04 C08L 83:04 H01L 29/78 619A 626C F-term (Reference) 2H090 HB03X HB04X HC05 HC16 HD02 JB02 JB03 LA04 4F073 AA32 BA33 BB01 CA46 CA62 5F058 AA10 AC03 AF04 AG09 BB07 BC02 BC08 BF46 BH01 DD17B17 DD17 DD14 DD15 DD24 DD25 EE02 FF02 GG02 HL02 NN02 NN03 NN23 NN24
Claims (7)
基板上に塗布して、前記ポリマーの塗布膜を形成する工
程と、前記塗布膜を紫外光照射により加熱して、絶縁性
薄膜に転化する工程とを有することを特徴とする絶縁膜
の形成方法。1. A step of applying a solution containing a silicon compound polymer on a substrate to form a coating film of the polymer, and a step of heating the coating film by irradiation with ultraviolet light to convert the coating film into an insulating thin film. And a method for forming an insulating film.
またはSi−C結合を有することを特徴とする請求項１記
載の絶縁膜の形成方法。2. The method according to claim 1, wherein the silicon compound polymer has a Si—N bond or a Si—C bond.
から選ばれる１種、または２種以上が組み合わされた複
合化合物、あるいはそれらに金属元素が組み合わされた
複合化合物からなることを特徴とする請求項１記載の絶
縁膜の形成方法。3. The method according to claim 1, wherein the insulating film is made of one of silicon oxide, silicon nitride, and silicon carbide, or a composite compound of two or more thereof, or a composite compound of a combination thereof and a metal element. The method for forming an insulating film according to claim 1.
なうことにより、シリコン化合物ポリマー塗布膜を酸化
珪素膜に転化することを特徴とする請求項１記載の絶縁
膜の形成方法。4. The method for forming an insulating film according to claim 1, wherein the ultraviolet light irradiation is performed in an atmosphere containing oxygen to convert the silicon compound polymer coated film into a silicon oxide film.
ことを特徴とする請求項１〜４のいずれかに記載の絶縁
膜の製造方法。5. The method of manufacturing an insulating film according to claim 1, wherein the ultraviolet light source is an excimer laser.
る薄膜デバイスであって、請求項１〜５のいずれかに記
載の方法で形成された絶縁膜を少なくとも1層含んで構
成された薄膜デバイス。6. A thin-film device comprising a plurality of thin films laminated on a glass substrate, comprising at least one insulating film formed by the method according to claim 1. Thin film devices.
る薄膜デバイスの製造工程において、請求項１〜５のい
ずれかに記載の方法で絶縁膜を形成する工程を含むこと
を特徴とする薄膜デバイスの製造方法。7. A method for manufacturing a thin film device comprising a plurality of thin films laminated on a glass substrate, comprising the step of forming an insulating film by the method according to claim 1. Description: A method for manufacturing a thin film device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28555199A JP2001110802A (en) | 1999-10-06 | 1999-10-06 | Method for forming insulation film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28555199A JP2001110802A (en) | 1999-10-06 | 1999-10-06 | Method for forming insulation film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001110802A true JP2001110802A (en) | 2001-04-20 |
Family
ID=17693017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28555199A Pending JP2001110802A (en) | 1999-10-06 | 1999-10-06 | Method for forming insulation film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001110802A (en) |
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