JP2007129061A - High-frequency electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-frequency electronic component that can be miniaturized by reducing degradation in electric characteristics of a conductor forming an inductor inside a laminated body. <P>SOLUTION: The high-frequency electronic component is formed by composing the conductors 111-115 which form the inductor inside the laminated body 110 mainly made of a nonmagnetic material, and a laminated inductor element 100C in which magnetic material layers 141, 142 are provided inside the laminated body 110 so as to face the conductors 111-115 forming the inductor. By this, it is possible to reduce disturbance of magnetic flux caused by grounding conductors 151, 152 arranged across the magnetic material layers 141, 142, to magnetic fields emitted from the conductors 111-115 forming the inductor. Also, it is possible to suppress eddy currents occurring in the conductors due to the magnetic fields, since the magnetic material layers 141, 142 are provided so as to face the conductors 111-115 forming the inductor. Consequently, it is possible to reduce the degradation in electric characteristics of the conductors 111-115 forming the inductor even when the high-frequency electronic component is miniaturized. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a high-frequency electronic component having an inductor conductor inside a laminated body mainly made of a nonmagnetic material, and more particularly to a high-frequency electronic component capable of suppressing deterioration of inductor characteristics.

  In recent years, with the miniaturization of electronic devices, there is an increasing demand for miniaturization and low profile for high-frequency electronic components such as inductors and filters. In order to meet such demands, it is necessary to eliminate the space provided inside the parts in order to avoid external influences, and to make an extreme design.

  Furthermore, in order to reduce the size of modules and devices, the distance between the high-frequency electronic components used for this and the distance between the high-frequency electronic components and the shield case of the module have come to the limit.

As a circuit device using this type of high-frequency electronic component, for example, a high-frequency circuit device disclosed in Japanese Patent Laid-Open No. 8-316686 (Patent Document 1) is known.
JP-A-8-316686

  However, as described above, if the space inside the high-frequency electronic component is eliminated and the interval between the high-frequency electronic component used in the module or device and the interval between the high-frequency electronic component and the shield case of the module are approached to the limit, the characteristics of the high-frequency electronic component are obtained. Fluctuations may occur and new countermeasures are needed.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a high-frequency electronic component that can be reduced in size by reducing deterioration in electrical characteristics of a conductor forming an inductor in a multilayer body. Is to provide.

  In order to achieve the above object, the present invention provides a high-frequency electronic component including a conductor that forms an inductor in a multilayer body mainly made of a nonmagnetic material so as to face the conductor that forms the inductor. A high-frequency electronic component in which a magnetic material layer is provided either on the inside or on the surface of the laminate is proposed.

  In the high frequency electronic component of the present invention, since the magnetic material layer is provided so as to face the conductor forming the inductor, the inductor is formed with respect to a magnetic field generated from the conductor forming the inductor. The disturbance of the magnetic flux caused by the opposing conductor disposed with the magnetic material layer sandwiched with respect to the conducting conductor is reduced, and the eddy current generated in the opposing conductor by the magnetic field is suppressed.

  According to the high frequency electronic component of the present invention, a GND (grounding) electrode and an internal electrode such as a wiring pattern that are close to the conductor forming the inductor, a shield case that exists outside the component, and a close proximity to the conductor. The influence of the inductor, the pattern of the printed wiring board, etc. on the magnetic field generated by the inductor can be reduced, so that the characteristics of the inductor and the filter using the inductor can be stabilized and the high frequency Even if the electronic component is reduced in size, stable and substantially similar characteristics can be obtained.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic side sectional view of a multilayer inductor element as an example of a high frequency electronic component according to a first embodiment of the present invention. In the figure, each of 100A, 100B, and 100C is a multilayer inductor element.

  A multilayer inductor element 100A includes a multilayer body 101 mainly composed of a nonmagnetic material, a plurality of conductors 111 to 115 embedded in a plurality of layers inside the multilayer body 101, and these conductors 111 to 115 are spirally connected. A via conductor 121, magnetic material layers 141 and 142 provided in the upper layer portion and the lower layer portion in the multilayer body 101, and external electrodes 131 and 132 provided in both end portions of the multilayer body 101, respectively.

  The conductors 111 to 115 form a spiral coil, and one end of the conductor 111 is connected to the external electrode 131, and the other end of the conductor 111 is disposed in different layers, respectively. The via conductor 121 is connected to one end of the conductor 115, and the other end of the conductor 115 is connected to the external electrode 132.

  In addition, the magnetic material layer 141 has a planar shape, and is provided on an upper layer with a predetermined interval from the conductor 111 so as to face the conductor 111, and the magnetic material layer 142 is provided with respect to the conductor 115. Thus, the conductor 115 is provided on the lower layer with a predetermined interval so as to face the conductor 115.

  The multilayer inductor element 100B has a configuration in which ground conductors 151 and 152 are provided on the multilayer inductor element 100A. The ground conductor 151 is provided in contact with the upper surface of the magnetic material layer 141, the ground conductor 152 is provided in contact with the lower surface of the magnetic material layer 142, and these ground conductors 151 and 152 are provided on the side surfaces of the multilayer body 110. It is conductively connected to a grounding external electrode (not shown).

  The multilayer inductor element 100C has substantially the same configuration as the multilayer inductor element 100B described above, and the difference between them is the distance between the conductor 111 and the magnetic material layer 141 and the difference between the conductor 115 and the magnetic material layer 142. The distance between them is set small, and a wasteful space between them is omitted, and the height of the laminate 110 is made low.

  Next, the electrical characteristics of the multilayer inductor elements 100A, 100B, and 100C having the above configuration will be described with reference to comparative examples. As a comparative example, the multilayer inductor elements 200A, 200B, and 200C shown in FIG. 2 were used. These multilayer inductor elements 200A, 200B, and 200C are obtained by removing the magnetic material layers 141 and 142 from the multilayer inductor elements 100A, 100B, and 100C described above.

  FIG. 3 is a diagram showing values obtained by simulating the inductance values of the multilayer inductors 100A, 100B, and 100C to which the present invention is applied and the multilayer inductors 200A, 200B, and 200C as comparative examples, and FIG. 4 shows these Q values. It is a figure which shows the value when it simulates. As shown in FIG. 3, when ground conductors 151 and 152 are provided, the multilayer inductor to which the present invention is applied even if the distance between the ground conductors 151 and 152 and the coil conductor formed by the conductors 111 to 115 is changed. The inductance values of the elements 100A, 100B, and 100C are almost the same value. In contrast, in the multilayer inductor elements 200A, 200B, and 200C of the comparative example, the inductance value decreases as the distance between the ground conductors 151 and 152 and the coil conductor formed by the conductors 111 to 115 becomes shorter. .

  That is, as shown in FIG. 3, when the present invention is applied, when the ground conductors 151 and 152 are not provided as in the multilayer inductor element 100A (A11), the multilayer inductor element has an inductance value of 7.60 nH. When ground conductors 151 and 152 are provided as in 100B and 100C (A12 to A15), even if the distance between the ground conductors 151 and 152 and the coil conductor formed by the conductors 111 to 115 is changed, 6. When the distance from the coil conductor to the ground conductors 151 and 152 is 167 μm (A12), 6.80 nH, 131 μm (A13), 6.65 nH, 93 μm (A14), 6.54 nH, and 58 μm (A15). It is 43 nH, and the substantially same value is maintained.

  On the other hand, the multilayer inductor elements 200A, 200B, and 200C of the comparative example have an inductance value of 7.00 nH when the ground conductors 151 and 152 are not provided (B11) as in the multilayer inductor element 200A. When the ground conductors 151 and 152 are provided as in the multilayer inductor elements 200B and 200C (B12 to B15), the distance between the ground conductors 151 and 152 and the coil conductor formed by the conductors 111 to 115 is changed. When the distance from the coil conductor to the ground conductors 151 and 152 is 167 μm (B12), 6.00 nH, 131 μm (B13), 5.56 nH, 93 μm (B14), 4.91 nH, and 58 μm (B15). It becomes 4.00 nH, and the inductance value decreases as the distance becomes shorter.

  As shown in FIG. 4, when the present invention is applied, when the ground conductors 151 and 152 are not provided (A21) like the multilayer inductor element 100A, the multilayer inductor element has a Q value of 46.0. When ground conductors 151 and 152 are provided as in 100B and 100C (A22 to A25), if the distance between the ground conductors 151 and 152 and the coil conductor formed by the conductors 111 to 115 is changed, the coil When the distance from the conductor to the ground conductors 151 and 152 is 167 μm (A22), the Q value is 36.4, when the distance is 131 μm (A23), the Q value is 35.0, and when the distance is 93 μm (A24), the Q value is 31. The Q value at 4 and 58 μm (A25) is 27.7.

  On the other hand, in the multilayer inductor elements 200A, 200B, and 200C of the comparative example, when the ground conductors 151 and 152 are not provided (B21) as in the multilayer inductor element 200A, the Q value is 44.0. When the ground conductors 151 and 152 are provided as in the multilayer inductor elements 200B and 200C (B22 to B25), the distance between the ground conductors 151 and 152 and the coil conductor formed by the conductors 111 to 115 is changed. The Q value when the distance from the coil conductor to the ground conductors 151 and 152 is 167 μm (B22) is 33.2, the Q value when it is 131 μm (B23) is 30.0, and the Q value when 93 μm (B24). When the value is 25.9 and 58 μm (B25), the Q value is 18.6.

  Thus, when the present invention is applied, the magnetic material layers 141 and 142 are maintained with substantially the same inductance value even when the distance between the ground conductors 151 and 152 and the coil conductor formed by the conductors 111 to 115 is changed. Compared with the case where it is not provided, the fluctuation of the Q value is also reduced.

  Next, a second embodiment of the present invention will be described.

  FIG. 5 is a schematic side sectional view of a multilayer inductor element as an example of the high frequency electronic component according to the second embodiment of the present invention. In the figure, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted. Each of 300A, 300B, and 300C is a multilayer inductor element, and is configured by removing the upper magnetic material layer 141 and the ground conductor 151 from the multilayer inductor elements 100A, 100B, and 100C in the first embodiment described above. is there.

  Next, the electrical characteristics of the multilayer inductor elements 300A, 300B, and 300C having the above configuration will be described with reference to comparative examples. As a comparative example, multilayer inductor elements 400A, 400B, and 400C shown in FIG. 6 were used. These multilayer inductor elements 400A, 400B, and 400C are obtained by removing the magnetic material layer 142 from the aforementioned multilayer inductor elements 300A, 300B, and 300C.

  FIG. 7 is a diagram showing values obtained by simulating the inductance values of the multilayer inductors 300A, 300B, and 300C to which the present invention is applied and the multilayer inductors 400A, 400B, and 400C as comparative examples, and FIG. 8 shows these Q values. It is a figure which shows the value when it simulates. As shown in FIG. 7, when the ground conductor 152 is provided, the multilayer inductor to which the present invention is applied even if the distance between the ground conductor 152 and the coil conductor formed by the conductors 111 to 115 is changed. The inductance values of the elements 300A, 300B, and 300C are almost the same value. In contrast, in the multilayer inductor elements 400A, 400B, and 400C of the comparative example, the inductance value decreases as the distance between the ground conductor 152 and the coil conductor formed by the conductors 111 to 115 becomes shorter. .

  That is, as shown in FIG. 7, when the present invention is applied, when the ground conductor 152 is not provided as in the multilayer inductor element 300A (A31), the multilayer inductor element has an inductance value of 7.60 nH. When ground conductor 152 is provided as in 300B and 300C (A32 to A35), even if the distance between the ground conductor 152 and the coil conductor formed by the conductors 111 to 115 is changed, When the distance from the coil conductor to the ground conductor 152 is 167 μm (A32), 6.91 nH, 131 μm (A33), 6.81 nH, 93 μm (A34), 6.70 nH, and 58 μm (A35). It is 49 nH and maintains almost the same value.

  In contrast, the multilayer inductor elements 400A, 400B, and 400C of the comparative example have an inductance value of 7.00 nH when the ground conductor 152 is not provided (B31) as in the multilayer inductor element 400A. When the ground conductor 152 is provided as in the multilayer inductor elements 400B and 400C (B32 to B35), the distance between the ground conductor 152 and the coil conductor formed by the conductors 111 to 115 is changed. When the distance from the coil conductor to the ground conductor 152 is 167 μm (B32), 6.28 nH, 131 μm (B33), 6.06 nH, 93 μm (B34), 5.57 nH, and 58 μm (B35). It becomes 4.79 nH, and the inductance value decreases as the distance becomes shorter.

  As shown in FIG. 8, when the present invention is applied, when the ground conductor 152 is not provided (A41) unlike the multilayer inductor element 300A, the multilayer inductor element has a Q value of 44.4. In the case where the ground conductor 152 is provided as in 300B and 300C (A42 to A45), if the distance between the ground conductor 152 and the coil conductor formed by the conductors 111 to 115 is changed, the coil When the distance from the conductor to the ground conductor 152 is 167 μm (A42), the Q value is 39.8, when the distance is 131 μm (A43), the Q value is 38.0, and when the distance is 93 μm (A44), the Q value is 36. The Q value at .6, 58 μm (A45) is 24.3.

  On the other hand, in the multilayer inductor elements 400A, 400B, and 400C of the comparative example, when the ground conductor 152 is not provided (B41) as in the multilayer inductor element 400A, the Q value is 43.1. When the ground conductor 152 is provided as in the multilayer inductor elements 400B and 400C (B42 to B45), the distance between the ground conductor 152 and the coil conductor formed by the conductors 111 to 115 is changed. When the distance from the coil conductor to the ground conductor 152 is 167 μm (B42), the Q value is 37.6, 131 μm (B43), and the Q value is 34.8, 93 μm (B44). When the value is 30.2 and 58 μm (B45), the Q value is 24.7.

  As described above, when the present invention is applied, even when the distance between the ground conductor 152 and the coil conductor formed by the conductors 111 to 115 is changed, the substantially same inductance value is maintained, and the magnetic material layer 142 is Compared with the case where it is not provided, the fluctuation of the Q value is also reduced.

  Next, a third embodiment of the present invention will be described.

  FIG. 9 is a schematic side sectional view of a low-pass filter element that is an example of a high-frequency electronic component according to a third embodiment of the present invention. In the figure, each of 500A, 500B, and 500C is a low-pass filter element.

  The low-pass filter element 500A includes a multilayer body 501 mainly composed of a nonmagnetic material, a plurality of conductors 511 to 514, 521 to 524, 531, 541, and 542 embedded in a plurality of layers inside the multilayer body 501, and via conductors 532 and 543 connecting these conductors. And a magnetic material layer 551 provided in the upper layer portion inside the laminated body 501.

  The conductors 511 to 514, 531 form a spiral coil, and one end of the conductor 511 is connected to an external electrode (not shown), and the other end of the conductor 511 is disposed in a different layer. 514 and via conductor 532 are connected to one end of conductor 531.

  The conductors 521 to 524 and 531 form a spiral coil. One end of the conductor 521 is connected to an external electrode (not shown), and the other end of the conductor 521 is disposed in a different layer. It is connected to the other end of the conductor 531 via 524 and a via conductor 532.

  The central portion of the conductor 531 is connected to a planar conductor 541 via a via conductor 543, and is connected to a ground external electrode (not shown) so as to face the conductor 541 with a predetermined interval. A planar ground conductor 542 is disposed.

  The magnetic material layer 551 has a planar shape and is provided on the upper layer at a predetermined interval from the conductors 511 and 512 so as to face the conductors 511 and 521.

  The low-pass filter elements 500B and 500C have a configuration in which the above-described low-pass filter element 500A is provided with a shield case 561. In the low-pass filter element 500B, the distance between the surface of the multilayer body 501 and the shield case 561 is set wide, and the low-pass filter element In 500C, the distance between the surface of the laminated body 501 and the shield case 561 is set narrow.

  Next, the electrical characteristics of the low-pass filter elements 500A, 500B, and 500C having the above configuration will be described with reference to comparative examples. As a comparative example, low-pass filter elements 600A, 600B, and 600C shown in FIG. 10 were used. These low-pass filter elements 600A, 600B, and 600C are obtained by removing the magnetic material layer 551 from the low-pass filter elements 500A, 500B, and 500C described above.

  FIG. 11 is a diagram showing a simulation result of the frequency characteristics of the attenuation amounts of the low-pass filter elements 500A, 500B, and 500C to which the present invention is applied. FIG. 12 is a frequency characteristic of the attenuation amount of the low-pass filter elements 600A, 600B, and 600C as a comparative example. It is a figure which shows the simulation result.

  In FIG. 11, the characteristic curve AT11 represents the frequency characteristic of the low-pass filter element 500A without the shield case 561. The attenuation amount is approximately 0 dB at 1 to 1.5 GHz, and the frequency increases from 1.5 GHz. The attenuation gradually increases, and shows a maximum value of −48 dB at 2.4 GHz. After that, the attenuation gradually decreased from 2.4 GHz to 2.7 GHz and showed a minimum value of −32 dB at 2.7 GHz, and then the attenuation gradually increased and again showed a maximum value of −53 dB at 3.0 GHz. ing. After that, the attenuation gradually decreases and shows −17 dB at 5.0 GHz.

  Characteristic curves AT12 to AT15 show the frequency characteristics of attenuation in the low-pass filter elements 500A and 500C provided with the shield case 561.

  A characteristic curve AT12 is a frequency characteristic when the distance between the multilayer body 501 and the shield case 561 is set to 300 μm, and shows a frequency characteristic obtained by shifting the frequency characteristic of the characteristic curve AT11 by about 40 MHz in the high frequency direction. Yes.

  The characteristic curve AT13 is a frequency characteristic when the interval between the laminate 501 and the shield case 561 is set to 200 μm, and shows the frequency characteristic obtained by shifting the frequency characteristic of the characteristic curve AT11 by about 80 MHz in the high frequency direction. Yes.

  The characteristic curve AT14 is a frequency characteristic when the interval between the laminate 501 and the shield case 561 is set to 100 μm, and shows the frequency characteristic obtained by shifting the frequency characteristic of the characteristic curve AT11 by about 120 MHz in the high frequency direction. Yes.

  The characteristic curve AT15 is a frequency characteristic when the interval between the laminate 501 and the shield case 561 is set to 50 μm, and shows the frequency characteristic obtained by shifting the frequency characteristic of the characteristic curve AT11 by about 160 MHz in the high frequency direction. Yes.

  In FIG. 12, a characteristic curve AT21 represents the frequency characteristic of the low-pass filter element 600A without the shield case 561. The attenuation amount is approximately 0 dB at 1 to 1.5 GHz, and the frequency increases from 1.5 GHz. The attenuation gradually increases, and shows a maximum value of −48 dB at 2.4 GHz. After that, the attenuation gradually decreased from 2.4 GHz to 2.7 GHz and showed a minimum value of −32 dB at 2.7 GHz, and then the attenuation gradually increased and again showed a maximum value of −53 dB at 3.15 GHz. ing. After that, the attenuation gradually decreases and shows −17 dB at 5.0 GHz.

  Characteristic curves AT22 to AT25 show the frequency characteristics of attenuation amounts in the low-pass filter elements 600A and 600C provided with the shield case 561.

  The characteristic curve AT22 is a frequency characteristic when the interval between the laminate 501 and the shield case 561 is set to 300 μm, and shows the frequency characteristic obtained by shifting the frequency characteristic of the characteristic curve AT21 by about 45 MHz in the high frequency direction. Yes.

  The characteristic curve AT23 is a frequency characteristic when the interval between the laminate 501 and the shield case 561 is set to 200 μm, and shows the frequency characteristic obtained by shifting the frequency characteristic of the characteristic curve AT21 by about 90 MHz in the high frequency direction. Yes.

  The characteristic curve AT24 is a frequency characteristic when the interval between the laminate 501 and the shield case 561 is set to 100 μm, and shows the frequency characteristic obtained by shifting the frequency characteristic of the characteristic curve AT21 by about 210 MHz in the high frequency direction. Yes.

  The characteristic curve AT25 is a frequency characteristic when the interval between the laminate 501 and the shield case 561 is set to 50 μm, and shows the frequency characteristic obtained by shifting the frequency characteristic of the characteristic curve AT21 by about 360 MHz in the high frequency direction. Yes.

  Thus, when the present invention is applied, the frequency characteristic when there is no shield case 561 and the frequency characteristic when the shield case 561 is brought close to the laminated body 501 up to 50 μm merely cause a frequency shift of about 160 MHz. Compared with the case where the magnetic material layer 551 is not provided, the frequency shift amount can be suppressed to half or less.

  Next, a fourth embodiment of the present invention will be described.

  FIG. 13 is a schematic side sectional view of a band-pass filter element that is an example of a high-frequency electronic component according to a fourth embodiment of the present invention. In the figure, each of 700A, 700B, and 700C is a band-pass filter element.

  The bandpass filter element 700A is provided in a multilayer body 701 mainly composed of a nonmagnetic material, a plurality of conductors 702 to 705 embedded in a plurality of layers inside the multilayer body 701, and an upper layer portion inside the multilayer body 701. And a magnetic material layer 710.

  The conductor 702 is a microstrip line forming an inductor, and conductors 703 and 704 are provided on the upper and lower layers of one end portion with a nonmagnetic material layer interposed therebetween. These conductors 703 and 704 are on a plane and are arranged to face the conductor 702 so as to form a capacitor. In addition, conductors 705 and 706 are provided on the upper and lower layers of the other end portion of the conductor 702 with a nonmagnetic material layer interposed therebetween. These conductors 705 and 706 are on a plane and are arranged to face the conductor 702 so as to form a capacitor.

  The magnetic material layer 710 is on a flat surface, and is provided on an upper layer at a predetermined interval with respect to the conductors 702 to 706 so as to face the conductors 702 to 706.

  The bandpass filter elements 700B and 700C have a configuration in which the above-described bandpass filter element 700A is provided with a shield case 720. In the bandpass filter element 700B, the interval between the surface of the multilayer body 701 and the shield case 720 is set wide, and the lowpass In the filter element 700C, the distance between the surface of the multilayer body 701 and the shield case 720 is set narrow.

  Next, the electrical characteristics of the bandpass filter elements 700A, 700B, and 700C having the above-described configuration will be described with reference to comparative examples. As a comparative example, band pass filter elements 800A, 800B, and 800C shown in FIG. 14 were used. These band pass filter elements 800A, 800B, and 800C are obtained by removing the magnetic material layer 701 from the band pass filter elements 700A, 700B, and 700C described above.

  FIG. 15 is a diagram showing a simulation result of the frequency characteristics of the attenuation amounts of the bandpass filter elements 700A, 700B, and 700C to which the present invention is applied, and FIG. 16 shows the attenuation amount of the bandpass filter elements 800A, 800B, and 800C as a comparative example. It is a figure which shows the simulation result of a frequency characteristic.

  In FIG. 15, a characteristic curve AT31 represents a frequency characteristic of the bandpass filter element 700A without the shield case 720, and has an attenuation of −38.3 dB at 1.00 GHz, and the frequency increases from 1.00 GHz. As the frequency increases from 2.16 GHz, the attenuation gradually increases as the frequency decreases from 2.16 GHz. The attenuation at 0.000 GHz is -30.0 dB.

  Characteristic curves AT32 to AT35 show frequency characteristics of attenuation amounts in the bandpass filter elements 700B and 700C provided with the shield case 720.

  The characteristic curve AT32 is a frequency characteristic when the interval between the laminate 701 and the shield case 720 is set to 300 μm, and has an attenuation of −41.7 dB at 1.00 GHz, and the frequency starts from 1.00 GHz. As the frequency rises, the attenuation gradually decreases. At about 2.01 GHz, the attenuation becomes almost 0 dB. After that, the attenuation is almost 0 dB until 2.18 GHz, and gradually increases as the frequency increases from 2.18 GHz. The attenuation at 3.00 GHz is −29.6 dB.

  A characteristic curve AT33 is a frequency characteristic when the interval between the laminate 701 and the shield case 720 is set to 200 μm, and has an attenuation of −42.5 dB at 1.00 GHz, and the frequency starts from 1.00 GHz. As the frequency rises, the attenuation gradually decreases. At about 2.03 GHz, the attenuation becomes almost 0 dB. After that, the attenuation is almost 0 dB until 2.19 GHz, and gradually increases as the frequency rises from 2.19 GHz. The attenuation at 3.00 GHz is −29.1 dBdB.

  The characteristic curve AT34 is a frequency characteristic when the interval between the laminate 701 and the shield case 720 is set to 100 μm, and has an attenuation of −44.2 dB at 1.00 GHz, and the frequency starts from 1.00 GHz. As the frequency rises, the attenuation gradually decreases. At about 2.05 GHz, the attenuation becomes almost 0 dB. After that, the attenuation is almost 0 dB up to 2.22 GHz, and gradually increases as the frequency increases from 2.22 GHz. The attenuation at 3.00 GHz is -27.5 dB.

  The characteristic curve AT35 is a frequency characteristic when the interval between the laminate 701 and the shield case 720 is set to 50 μm, and has an attenuation of −45.8 dB at 1.00 GHz, and the frequency starts from 1.00 GHz. As the frequency rises, the attenuation gradually decreases. At about 2.10 GHz, the attenuation becomes almost 0 dB. After that, it maintains almost 0 dB until 2.25 GHz, and gradually increases as the frequency increases from 2.25 GHz. The attenuation at 3.00 GHz is −25.8 dB.

  In FIG. 16, a characteristic curve AT41 represents the frequency characteristic of the band-pass filter element 800A without the shield case 720, and has an attenuation of −38.7 dB at 1.00 GHz, and the frequency increases from 1.00 GHz. As the frequency increases from 2.22 GHz, the attenuation increases gradually as the attenuation decreases gradually to about 0 dB at about 2.00 GHz and then maintains about 0 dB until 2.22 GHz. The attenuation at 0.000 GHz is −28.6 dB.

  Characteristic curves AT42 to AT45 show the frequency characteristics of attenuation amounts in the bandpass filter elements 800B and 800C provided with the shield case 720.

  The characteristic curve AT42 is a frequency characteristic when the interval between the laminate 701 and the shield case 720 is set to 300 μm, and has an attenuation of −41.5 dB at 1.00 GHz, and the frequency starts from 1.00 GHz. As the frequency rises, the attenuation gradually decreases. At about 2.07 GHz, the attenuation becomes almost 0 dB. After that, it maintains about 0 dB until 2.25 GHz, and gradually increases as the frequency increases from 2.25 GHz. The attenuation at 3.00 GHz is −27.4 dB.

  A characteristic curve AT43 is a frequency characteristic when the interval between the laminate 701 and the shield case 720 is set to 200 μm, and has an attenuation of −42.7 dB at 1.00 GHz, and the frequency starts from 1.00 GHz. As the frequency rises, the attenuation gradually decreases, and the attenuation reaches approximately 0 dB at about 2.08 GHz. After that, it maintains approximately 0 dB until 2.28 GHz, and gradually increases as the frequency increases from 2.28 GHz. The attenuation at 3.00 GHz is −26.2 dBdB.

  A characteristic curve AT44 is a frequency characteristic when the interval between the laminate 701 and the shield case 720 is set to 100 μm, and has an attenuation of −44.4 dB at 1.00 GHz, and the frequency starts from 1.00 GHz. As the frequency rises, the attenuation gradually decreases. At about 2.09 GHz, the attenuation becomes almost 0 dB. After that, it maintains about 0 dB until 2.36 GHz, and gradually increases as the frequency increases from 2.36 GHz. The attenuation at 3.00 GHz is -22.2 dB.

  A characteristic curve AT45 is a frequency characteristic when the interval between the laminate 701 and the shield case 720 is set to 50 μm, and has an attenuation of −46.0 dB at 1.00 GHz, and the frequency from 1.00 GHz. As the frequency rises, the attenuation gradually decreases. At about 2.16 GHz, the attenuation becomes almost 0 dB. After that, it remains almost 0 dB until 2.40 GHz, and gradually increases as the frequency increases from 2.40 GHz. The attenuation at 3.00 GHz is -19.0 dB.

  Thus, when the present invention is applied, the frequency characteristic when the shield case 720 is not provided and the frequency characteristic when the shield case 720 is brought close to the laminated body 701 to 50 μm merely cause a frequency shift of about 100 MHz. Compared with the case where the magnetic material layer 701 is not provided, the frequency shift amount can be reduced.

  As described above, according to the high frequency electronic components of the first to fourth embodiments, the magnetic flux is disturbed by forming the magnetic material layer in a predetermined portion facing the conductor forming the inductor, the microstrip line, and the like. Since it can be eliminated or eddy currents generated in the electrodes can be suppressed, internal electrodes such as GND electrodes and wiring patterns close to the inductor part, microstrip line part, etc. of the parts, or shield cases existing outside the parts In addition, fluctuations in characteristics due to the influence of components placed close to each other, printed circuit board patterns, etc. can be reduced. As a result, even if the modules and devices using the above-mentioned high-frequency electronic components are downsized, inductors and The electrical characteristics of the filter and the like can be stabilized.

  In addition, the said embodiment is an example of this invention, Comprising: This invention is not limited only to the structure of the said embodiment. For example, in each of the embodiments described above, the magnetic material layers 141, 142, 551, and 710 are provided inside the multilayer bodies 110, 501, and 701. However, the present invention is not limited to this, and substantially the same effect can be obtained by providing the magnetic material layers 141, 142, 551, and 710 on the surface of the multilayer bodies 110, 501, and 701. Obtainable.

Side surface schematic sectional drawing of the multilayer inductor element which is an example of the high frequency electronic component in 1st Embodiment of this invention Side surface schematic sectional drawing of the multilayer inductor element as a comparative example in 1st Embodiment of this invention The figure which shows the inductance value of the multilayer inductor element in 1st Embodiment of this invention. The figure which shows the multilayer inductor element Q value in 1st Embodiment of this invention Side surface schematic sectional drawing of the multilayer inductor element which is an example of the high frequency electronic component in 2nd Embodiment of this invention Side surface schematic sectional drawing of the multilayer inductor element as a comparative example in 2nd Embodiment of this invention The figure which shows the inductance value of the multilayer inductor element in 2nd Embodiment of this invention. The figure which shows the multilayer inductor element Q value in 2nd Embodiment of this invention Side surface schematic sectional drawing of the low-pass filter element in 3rd Embodiment of this invention. Side surface schematic sectional drawing of the low-pass filter element as a comparative example in 3rd Embodiment of this invention The figure which shows the frequency characteristic of the attenuation amount of the low-pass filter element in 3rd Embodiment of this invention. The figure which shows the frequency characteristic of the attenuation amount of the low-pass filter element of the comparative example in 3rd Embodiment of this invention. Side surface schematic sectional drawing of the band pass filter element in 4th Embodiment of this invention. Side surface schematic sectional drawing of the band pass filter element as a comparative example in 4th Embodiment of this invention The figure which shows the frequency characteristic of the attenuation amount of the band pass filter element in 4th Embodiment of this invention The figure which shows the frequency characteristic of the attenuation amount of the band pass filter element of the comparative example in 4th Embodiment of this invention

Explanation of symbols

  100A, 100B, 100C, 300A, 300B, 300C ... multilayer inductor element, 110 ... multilayer body, 111-115 ... conductor, 121 ... via conductor, 131, 132 ... external electrode, 141, 142 ... magnetic material layer, 151, 152 ... ground conductor , 500A, 500B, 500C ... low-pass filter element, 501 ... laminate, 511-514, 521-524, 531, 541, 542 ... conductor, 532, 543 ... via conductor, 551 ... magnetic material layer, 561 ... shield case, 700A, 700B, 700C ... band pass Filter element, 701 ... laminate, 702 to 706 ... conductor, 710 ... magnetic material layer, 720 ... shield case.

Claims (5)

In a high-frequency electronic component including a conductor that forms an inductor inside a laminate mainly composed of a non-magnetic material,
A high-frequency electronic component, wherein a magnetic material layer is provided on either the inside or the surface of the multilayer body so as to face the conductor forming the inductor. A grounding conductor disposed either inside or outside the laminate so as to face the conductor forming the inductor via the nonmagnetic material, on the side of the conductor forming the inductor The high-frequency electronic component according to claim 1, wherein a magnetic material layer is provided in the laminated body. The high-frequency electronic component according to claim 2, wherein the ground conductor is provided inside the multilayer body, and the magnetic material layer is provided in contact with the ground conductor.   2. The high frequency electronic component according to claim 1, wherein the conductor forming the inductor is a microstrip line. 2. The high-frequency electronic component according to claim 1, wherein the conductor forming the inductor is a coil conductor that circulates in a spiral shape.

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