JP2007113032A5 - - Google Patents

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Publication number
JP2007113032A5
JP2007113032A5 JP2005303134A JP2005303134A JP2007113032A5 JP 2007113032 A5 JP2007113032 A5 JP 2007113032A5 JP 2005303134 A JP2005303134 A JP 2005303134A JP 2005303134 A JP2005303134 A JP 2005303134A JP 2007113032 A5 JP2007113032 A5 JP 2007113032A5
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JP
Japan
Prior art keywords
sputtering
sintering
plane orientation
powder
electric current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005303134A
Other languages
English (en)
Japanese (ja)
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JP2007113032A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005303134A priority Critical patent/JP2007113032A/ja
Priority claimed from JP2005303134A external-priority patent/JP2007113032A/ja
Publication of JP2007113032A publication Critical patent/JP2007113032A/ja
Publication of JP2007113032A5 publication Critical patent/JP2007113032A5/ja
Pending legal-status Critical Current

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JP2005303134A 2005-10-18 2005-10-18 Ｒｕスパッタリング用ターゲット材 Pending JP2007113032A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005303134A JP2007113032A (ja) 2005-10-18 2005-10-18 Ｒｕスパッタリング用ターゲット材

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005303134A JP2007113032A (ja) 2005-10-18 2005-10-18 Ｒｕスパッタリング用ターゲット材

Publications (2)

Publication Number Publication Date
JP2007113032A JP2007113032A (ja) 2007-05-10
JP2007113032A5 true JP2007113032A5 (cg-RX-API-DMAC7.html) 2008-10-30

Family

ID=38095498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005303134A Pending JP2007113032A (ja) 2005-10-18 2005-10-18 Ｒｕスパッタリング用ターゲット材

Country Status (1)

Country Link
JP (1) JP2007113032A (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5616265B2 (ja) * 2011-03-25 2014-10-29 Hoya株式会社 薄膜の成膜方法、マスクブランクの製造方法及び転写用マスクの製造方法
EP3243914B1 (de) 2016-05-13 2018-10-17 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung von partikulärem ruthenium
CN111270210B (zh) * 2020-03-17 2021-11-12 贵研铂业股份有限公司 一种晶粒高定向取向的钌溅射靶材及其制备方法
CN116875952B (zh) * 2023-07-10 2025-06-13 云南贵金属实验室有限公司 一种低氧高密度Ru溅射靶材、制备方法及其用途

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4342639B2 (ja) * 1999-06-02 2009-10-14 株式会社東芝 スパッタリングターゲット、および電極膜の製造方法
JP2001020065A (ja) * 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
JP4503817B2 (ja) * 2000-11-30 2010-07-14 株式会社東芝 スパッタリングターゲットおよび薄膜
JP2004156114A (ja) * 2002-11-07 2004-06-03 Sumitomo Metal Mining Co Ltd 高純度ルテニウムスパッタリングターゲットの製造方法及びそれにより得られたターゲット
JP2005113174A (ja) * 2003-10-03 2005-04-28 Tanaka Kikinzoku Kogyo Kk スパッタリング用ルテニウムターゲット及びスパッタリング用ルテニウムターゲットの製造方法

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