JP2007108228A - Photoelectric consolidated substrate and its manufacturing method - Google Patents

Photoelectric consolidated substrate and its manufacturing method Download PDF

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JP2007108228A
JP2007108228A JP2005296571A JP2005296571A JP2007108228A JP 2007108228 A JP2007108228 A JP 2007108228A JP 2005296571 A JP2005296571 A JP 2005296571A JP 2005296571 A JP2005296571 A JP 2005296571A JP 2007108228 A JP2007108228 A JP 2007108228A
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thin film
opto
metal thin
core layer
cladding layer
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Hideyuki Usui
英之 薄井
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Nitto Denko Corp
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Nitto Denko Corp
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<P>PROBLEM TO BE SOLVED: To provide a photoelectric consolidated substrate capable of sufficiently shortening a distance between a core layer of an optical waveguide and a metallic wiring pattern surface and also sufficiently improving the propagation efficiency of an optical signal, and to provide its manufacturing method. <P>SOLUTION: The method of manufacturing the photoelectric consolidated substrate comprises: a process for forming a 1st cladding layer 2a on a metallic thin film surface of a metallic thin film transfer sheet which is a release base material formed with a metallic thin film thereon; a process for releasing the release base material; a process for forming a predetermined wiring pattern 11 by etching the metallic thin film; a process for forming the core layer 2b on the surface of the 1st cladding layer 2a; a process for forming a 2nd cladding layer 2c to cover the surface of this core layer 2b; and a process for forming a predetermined position of this core layer 2b into an optical path conversion mirror 21. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、一つの基板に光導波路（光配線）と金属製配線パターン（電気配線）とが形成されている光電気混載基板およびその製造方法に関するものである。   The present invention relates to an opto-electric hybrid board in which an optical waveguide (optical wiring) and a metal wiring pattern (electric wiring) are formed on one substrate, and a method for manufacturing the same.

最近、光を媒体とした情報通信が普及している。そこで、情報通信用電子機器等に用いる基板として、光導波路（光配線）と金属製配線パターン（電気配線）とが形成されている光電気混載基板（例えば、特許文献１参照）が採用されている。   Recently, information communication using light as a medium has become widespread. Therefore, an opto-electric hybrid board (for example, see Patent Document 1) in which an optical waveguide (optical wiring) and a metal wiring pattern (electric wiring) are formed is employed as a board used for information communication electronic devices and the like. Yes.

この光電気混載基板は、図９に示すように、金属製配線パターン１１が形成された基板５０と、光導波路２とが、接着剤層６０を介して接着されて形成されている。この光電気混載基板には、通常、上記金属製配線パターン１１上に、電気信号を光信号Ｌに変換する発光素子Ａと、光信号Ｌを電気信号に変換する受光素子Ｂとが接続されている。そして、発光素子Ａからの光信号Ｌを、光導波路を介して受光素子Ｂに伝達できるよう、発光素子Ａの下方および受光素子Ｂの下方では、上記基板５０に貫通孔５１が形成され、かつ、コア層２ｂに光路変換ミラー２１が形成されている。この光路変換ミラー２１は、コア層２ｂに形成された、光軸に対して４５°傾斜した傾斜面である。   As shown in FIG. 9, this opto-electric hybrid board is formed by bonding a substrate 50 on which a metal wiring pattern 11 is formed and an optical waveguide 2 via an adhesive layer 60. This opto-electric hybrid board is usually connected on the metal wiring pattern 11 with a light emitting element A for converting an electric signal into an optical signal L and a light receiving element B for converting the optical signal L into an electric signal. Yes. A through hole 51 is formed in the substrate 50 below the light emitting element A and below the light receiving element B so that the optical signal L from the light emitting element A can be transmitted to the light receiving element B through the optical waveguide. The optical path conversion mirror 21 is formed on the core layer 2b. The optical path conversion mirror 21 is an inclined surface formed in the core layer 2b and inclined by 45 ° with respect to the optical axis.

そして、光信号Ｌの伝達は、発光素子Ａから下方に発せられた光信号Ｌを、一方（図９では左側）の光路変換ミラー（傾斜面）２１で反射させて（光路を９０°変換させて）、光導波路２のコア層２ｂ内に導き、再度、他方（図９では右側）の光路変換ミラー（傾斜面）２１で反射させて（光路を９０°変換させて）、上方の受光素子Ｂに伝達させることにより行われる。なお、図９において、２ａは第１クラッド層、２ｃは第２クラッド層である。
特開２００４−２０７６７号公報 Then, the optical signal L is transmitted by reflecting the optical signal L emitted downward from the light emitting element A by one (left side in FIG. 9) optical path conversion mirror (inclined surface) 21 (the optical path is converted by 90 °). Then, the light is guided into the core layer 2b of the optical waveguide 2 and reflected again by the other (right side in FIG. 9) optical path conversion mirror (inclined surface) 21 (the optical path is converted by 90 °) to receive the upper light receiving element. This is done by transmitting to B. In FIG. 9, 2a is a first cladding layer, and 2c is a second cladding layer.
JP 2004-20767 A

しかしながら、信号の高密度化および高速化に伴って、従来の光電気混載基板では、光信号Ｌの伝搬効率が不充分になってきている。   However, with the increase in the density and speed of signals, the propagation efficiency of the optical signal L has become insufficient in the conventional opto-electric hybrid board.

そこで、本発明者は、この原因について研究を重ねた結果、その原因は、特に、光導波路２のコア層２ｂと受光素子Ｂとの間で光信号Ｌが減衰することにあることを突き止めた。そして、その減衰する原因は、光導波路２のコア層２ｂと受光素子Ｂとの間の距離が長いことにあることも突き止めた。   Therefore, as a result of repeated research on this cause, the present inventor has found that the cause is that the optical signal L is attenuated particularly between the core layer 2b of the optical waveguide 2 and the light receiving element B. . It was also found that the cause of the attenuation is that the distance between the core layer 2b of the optical waveguide 2 and the light receiving element B is long.

この原因究明結果に基づいて、本発明者は、光導波路２のコア層２ｂと受光素子Ｂとの間の距離（コア層２ｂと金属製配線パターン１１の表面との間の距離）を短縮すべく、金属製配線パターン１１が形成された基板５０を用いない光電気混載基板の製造方法を考えた。この製造方法は、金属箔等の金属シートの片面に光導波路２を形成した後、上記金属シートをエッチングすることにより、所定の金属製配線パターン１１に形成する方法である。   Based on the cause investigation result, the inventor shortens the distance between the core layer 2b of the optical waveguide 2 and the light receiving element B (the distance between the core layer 2b and the surface of the metal wiring pattern 11). Accordingly, a method of manufacturing an opto-electric hybrid board that does not use the board 50 on which the metal wiring pattern 11 is formed has been considered. This manufacturing method is a method of forming the optical waveguide 2 on one side of a metal sheet such as a metal foil and then forming the predetermined metal wiring pattern 11 by etching the metal sheet.

しかしながら、この製造方法では、金属シートの厚みをある程度厚くしなければ、製造過程における金属シートの取り扱い性が悪く、光導波路２および金属製配線パターン１１を形成する際の作業性が悪かった。そこで、金属シートの取り扱い性をよくするために金属シートを厚くすると、金属製配線パターン１１も厚くなるため、今度は光導波路２のコア層２ｂと受光素子Ｂとの間の距離が充分に短縮されず、光信号Ｌの伝搬効率を充分に向上させることができないという問題が生じた。   However, in this manufacturing method, unless the thickness of the metal sheet is increased to some extent, the handleability of the metal sheet in the manufacturing process is poor, and the workability when forming the optical waveguide 2 and the metal wiring pattern 11 is poor. Therefore, if the metal sheet is thickened to improve the handleability of the metal sheet, the metal wiring pattern 11 is also thickened, so that the distance between the core layer 2b of the optical waveguide 2 and the light receiving element B is sufficiently shortened. As a result, there is a problem that the propagation efficiency of the optical signal L cannot be sufficiently improved.

本発明は、このような事情に鑑みなされたもので、光導波路のコア層と金属製配線パターン表面との間の距離を充分に短縮し、光信号の伝搬効率を充分に向上させることができる光電気混載基板およびその製造方法の提供をその目的とする。   The present invention has been made in view of such circumstances, and can sufficiently shorten the distance between the core layer of the optical waveguide and the surface of the metal wiring pattern and sufficiently improve the propagation efficiency of the optical signal. An object is to provide an opto-electric hybrid board and a manufacturing method thereof.

上記の目的を達成するため、本発明は、光信号伝達手段と、電気信号伝達手段とを有した光電気混載基板であって、上記光信号伝達手段が、第１クラッド層と第２クラッド層とでコア層を挟持するとともに被包し、そのコア層の所定位置を光路変換ミラーに形成してなる光導波路からなり、上記電気信号伝達手段が、上記第１クラッド層の表面に絶縁層を介さず直接形成した金属製配線パターンからなる光電気混載基板を第１の要旨とする。   In order to achieve the above object, the present invention provides an opto-electric hybrid board having optical signal transmission means and electrical signal transmission means, wherein the optical signal transmission means includes a first cladding layer and a second cladding layer. The core layer is sandwiched and encapsulated, and a predetermined position of the core layer is formed on an optical path conversion mirror, and the electric signal transmission means includes an insulating layer on the surface of the first cladding layer. An opto-electric hybrid board made of a metal wiring pattern directly formed without any intervention is taken as a first gist.

また、本発明は、上記光電気混載基板を製造する方法であって、剥離基材の表面に金属薄膜が形成された金属薄膜転写シートを準備し、その金属薄膜の表面に第１クラッド層を形成する工程と、上記剥離基材を金属薄膜から剥離する工程と、上記金属薄膜をエッチングにより所定の配線パターンに形成する工程と、上記第１クラッド層の表面にコア層を形成する工程と、このコア層の表面を覆うように第２クラッド層を形成する工程と、上記コア層の所定位置を光路変換ミラーに形成する工程とを備えている光電気混載基板の製造方法を第２の要旨とする。   The present invention is also a method for producing the opto-electric hybrid board, comprising preparing a metal thin film transfer sheet in which a metal thin film is formed on the surface of a release substrate, and providing a first cladding layer on the surface of the metal thin film. A step of forming, a step of peeling the release substrate from the metal thin film, a step of forming the metal thin film into a predetermined wiring pattern by etching, a step of forming a core layer on the surface of the first cladding layer, A second summary of a method for manufacturing an opto-electric hybrid board, comprising: a step of forming a second cladding layer so as to cover the surface of the core layer; and a step of forming a predetermined position of the core layer on an optical path conversion mirror. And

本発明者は、先の考えた光電気混載基板の製造方法での結果に基づき、さらに研究を重ねた。その結果、光電気混載基板の製造方法において、剥離基材の表面に金属薄膜が形成された金属薄膜転写シートを用い、その金属薄膜の表面に第１クラッド層を形成した後に、上記剥離基材を金属薄膜から剥離し、上記金属薄膜をエッチングにより所定の配線パターンに形成すると、作業性がよく、品質の安定した光電気混載基板を製造することができ、しかも、コア層と配線パターン表面との間の距離を充分に短縮できることを見出し、本発明に到達した。   The inventor conducted further research based on the result of the above-described method for manufacturing an opto-electric hybrid board. As a result, in the method for manufacturing an opto-electric hybrid board, a metal thin film transfer sheet having a metal thin film formed on the surface of the peeling base material is used, and after forming the first cladding layer on the surface of the metal thin film, the peeling base material If the metal thin film is peeled off from the metal thin film and the metal thin film is formed into a predetermined wiring pattern by etching, an opto-electric hybrid board with good workability and stable quality can be manufactured. The present inventors have found that the distance between the two can be sufficiently shortened, and have reached the present invention.

すなわち、剥離基材の表面に金属薄膜が形成された上記金属薄膜転写シートを用いると、その金属薄膜を厚くしなくても、剥離基材により、ある程度の剛性を有しているため、金属薄膜転写シートの取り扱い性がよくなっている。これにより、その金属薄膜転写シートの金属薄膜の表面に第１クラッド層を形成する際の作業性がよくなっている。そして、剥離基材を剥離しても、上記金属薄膜と第１クラッド層との積層体は、第１クラッド層の形成により、ある程度の剛性を得ることができ、取り扱い性がよくなっている。このため、その後の工程（金属薄膜をエッチングにより所定の配線パターンに形成する工程，第１クラッド層表面にコア層を形成する工程等）でも、作業性がよく、その結果、品質の安定した光電気混載基板を得ることができる。そして、その得られた光電気混載基板は、従来の光電気混載基板を構成する、コア層上方の基板（金属製配線パターンが形成された基板）がなく、しかも、配線パターン（金属薄膜）の厚みも薄くできるため、その配線パターン上に接続される受光素子と光導波路のコア層との間の距離を充分に短縮することができ、光信号の伝搬効率を充分に向上させることができる。   That is, when the metal thin film transfer sheet having the metal thin film formed on the surface of the peeling substrate is used, the metal thin film has a certain degree of rigidity even if the metal thin film is not thickened. The transfer sheet is easy to handle. Thereby, the workability | operativity at the time of forming a 1st clad layer on the surface of the metal thin film of the metal thin film transfer sheet is improving. And even if it peels a peeling base material, the laminated body of the said metal thin film and 1st cladding layer can acquire a certain amount of rigidity by formation of a 1st cladding layer, and the handleability is improving. For this reason, in subsequent processes (such as a process of forming a metal thin film into a predetermined wiring pattern by etching, a process of forming a core layer on the surface of the first cladding layer, etc.) An electric mixed substrate can be obtained. The obtained opto-electric hybrid board does not have a substrate above the core layer (a board on which a metal wiring pattern is formed) that constitutes a conventional opto-electric hybrid board, and the wiring pattern (metal thin film) Since the thickness can be reduced, the distance between the light receiving element connected on the wiring pattern and the core layer of the optical waveguide can be sufficiently shortened, and the propagation efficiency of the optical signal can be sufficiently improved.

本発明の光電気混載基板は、金属製配線パターンが、光導波路の第１クラッド層の表面に絶縁層を介さず直接形成されているため、光導波路のコア層と金属製配線パターン表面との間の距離が充分に短縮されている。その結果、上記配線パターン上に接続される受光素子と光導波路のコア層との間の距離を充分に短縮することができ、光信号の伝搬効率を充分に向上させることができる。   In the opto-electric hybrid board according to the present invention, the metal wiring pattern is directly formed on the surface of the first cladding layer of the optical waveguide without an insulating layer, so that the core layer of the optical waveguide and the surface of the metal wiring pattern The distance between them is sufficiently shortened. As a result, the distance between the light receiving element connected on the wiring pattern and the core layer of the optical waveguide can be sufficiently shortened, and the propagation efficiency of the optical signal can be sufficiently improved.

特に、上記金属製配線パターンの厚みが、１．０〜５．０μｍの範囲内である場合には、その金属製配線パターンの厚みが充分に薄いため、光信号の伝搬効率をより一層向上させることができる。   In particular, when the thickness of the metal wiring pattern is in the range of 1.0 to 5.0 μm, the thickness of the metal wiring pattern is sufficiently thin, so that the propagation efficiency of the optical signal is further improved. be able to.

また、本発明の光電気混載基板の製造方法は、後に所定の配線パターンに形成される金属薄膜が剥離基材の表面に形成されている金属薄膜転写シートを用いるため、その金属薄膜転写シートを、ある程度の剛性を有した状態で取り扱うことができる。このため、その金属薄膜転写シートの金属薄膜（配線パターン）を薄くすることができる。また、その金属薄膜の表面に第１クラッド層を形成するため、金属薄膜転写シートの剥離基材を剥離しても、金属薄膜と第１クラッド層との積層体は、その第１クラッド層により、ある程度の剛性を得ることができ、取り扱い性がよくなっている。このため、その後の工程では、作業性がよく、その結果、品質の安定した光電気混載基板を得ることができる。そして、その得られた光電気混載基板では、配線パターンが、光導波路の第１クラッド層の表面に絶縁層を介さず直接形成されているため、光導波路のコア層と配線パターン表面との間の距離を充分に短縮することができる。その結果、上記配線パターン上に接続される受光素子と光導波路のコア層との間の距離を充分に短縮することができ、光信号の伝搬効率を充分に向上させることができる。   In addition, the method for manufacturing an opto-electric hybrid board according to the present invention uses a metal thin film transfer sheet in which a metal thin film to be formed later on a predetermined wiring pattern is formed on the surface of a release substrate. , It can be handled with a certain degree of rigidity. For this reason, the metal thin film (wiring pattern) of the metal thin film transfer sheet can be made thin. In addition, since the first clad layer is formed on the surface of the metal thin film, even if the peeling substrate of the metal thin film transfer sheet is peeled off, the laminate of the metal thin film and the first clad layer is formed by the first clad layer. A certain degree of rigidity can be obtained, and the handleability is improved. For this reason, in a subsequent process, workability | operativity is good, As a result, the opto-electric hybrid board | substrate with stable quality can be obtained. In the obtained opto-electric hybrid board, the wiring pattern is formed directly on the surface of the first cladding layer of the optical waveguide without an insulating layer, and therefore, between the core layer of the optical waveguide and the surface of the wiring pattern. Can be sufficiently shortened. As a result, the distance between the light receiving element connected on the wiring pattern and the core layer of the optical waveguide can be sufficiently shortened, and the propagation efficiency of the optical signal can be sufficiently improved.

特に、上記金属薄膜の厚みが、１．０〜５．０μｍの範囲内である場合には、後に形成される配線パターンの厚みを充分に薄くすることができ、しかも、剥離基材を剥離した後の、金属薄膜と第１クラッド層との積層体を、ある程度の剛性を得た状態で取り扱うことができる。このため、光信号の伝搬効率をより一層向上させた光電気混載基板を、安定した品質で製造することができる。   In particular, when the thickness of the metal thin film is in the range of 1.0 to 5.0 μm, the thickness of the wiring pattern to be formed later can be made sufficiently thin, and the peeling substrate is peeled off. The subsequent laminate of the metal thin film and the first cladding layer can be handled with a certain degree of rigidity. For this reason, the opto-electric hybrid board that further improves the propagation efficiency of the optical signal can be manufactured with stable quality.

つぎに、本発明の実施の形態を図面にもとづいて詳しく説明する。但し、本発明は、これに限定されるわけではない。   Next, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to this.

図１〜図６は、本発明の光電気混載基板の製造方法の一実施の形態を示している。この光電気混載基板の製造方法は、図６に示す光電気混載基板を製造する方法である。この光電気混載基板は、図６に示すように、光導波路２の表面に、絶縁層を介さず直接、金属製配線パターン１１を形成したものである。   1 to 6 show an embodiment of a method for manufacturing an opto-electric hybrid board according to the present invention. This opto-electric hybrid board manufacturing method is a method of manufacturing the opto-electric hybrid board shown in FIG. As shown in FIG. 6, this opto-electric hybrid board is obtained by forming a metal wiring pattern 11 directly on the surface of the optical waveguide 2 without using an insulating layer.

より詳しく説明すると、上記光導波路２は、第１クラッド層２ａと第２クラッド層２ｃとでコア層２ｂを挟持するとともに被包し、そのコア層２ｂの所定位置（図６では、左右両側部分）を光路変換ミラー２１に形成してなるものとなっている。この光路変換ミラー２１は、コア層２ｂを光軸に対して傾斜した傾斜面に形成した部分であり、その傾斜角度は、光路を変換させる角度によって決まり、通常、光軸に対して４５°に設定され、光路を９０°変換するように形成される。そして、金属製配線パターン１１は、光導波路２の第１クラッド層２ａの表面に形成されている。   More specifically, the optical waveguide 2 sandwiches and encloses the core layer 2b between the first clad layer 2a and the second clad layer 2c, and in a predetermined position of the core layer 2b (in FIG. ) Is formed on the optical path conversion mirror 21. The optical path conversion mirror 21 is a portion in which the core layer 2b is formed on an inclined surface inclined with respect to the optical axis, and the inclination angle is determined by the angle for converting the optical path, and is usually 45 ° with respect to the optical axis. It is set so that the optical path is converted by 90 °. The metal wiring pattern 11 is formed on the surface of the first cladding layer 2 a of the optical waveguide 2.

このような光電気混載基板は、つぎのようにして製造することができる。   Such an opto-electric hybrid board can be manufactured as follows.

まず、図１に示す、金属薄膜１ａが剥離基材１ｂの表面（図１では下面）に形成された金属薄膜転写シート１を準備し、さらに、下記に説明する、上記第１クラッド層２ａおよび第２クラッド層２ｃの形成材料、ならびにコア層２ｂの形成材料を準備する。   First, a metal thin film transfer sheet 1 in which a metal thin film 1a shown in FIG. 1 is formed on the surface (lower surface in FIG. 1) of a peeling substrate 1b is prepared, and the first cladding layer 2a and A material for forming the second cladding layer 2c and a material for forming the core layer 2b are prepared.

すなわち、上記金属薄膜転写シート１は、通常、市販品を用いるが、作製（例えば、剥離基材１ｂの表面に、スパッタリング法により金属薄膜１ａを形成する等）してもよい。そして、上記金属薄膜１ａは、後に配線パターン１１（図４参照）に形成されるものであり、その材料は、特に限定されないが、通常、銅が用いられる。金属薄膜１ａの厚みも、特に限定されないが、後に形成されるコア層２ｂと金属薄膜１ａの表面（上面）と間の距離を短くする観点から、１．０〜５．０μｍの範囲内にすることが好ましい。この距離が１．０μｍを下回ると、後に形成される配線パターン１１（図４参照）が断線し易くなり、上記距離が５．０μｍを上回ると、光信号Ｌの伝搬効率が不充分になるからである。また、上記剥離基材１ｂは、上記金属薄膜１ａとの接触面に剥離処理が施されており、金属薄膜１ａとの剥離が容易になっている。剥離基材１ｂとしては、特に限定されないが、通常、樹脂シートまたは金属シート等が用いられる。剥離基材１ｂの厚みも、特に限定されないが、できる限り薄い範囲で、金属薄膜転写シート１の取り扱い性がよくなる程度に剛性が得られる観点から、１０〜５０μｍの範囲内にすることが好ましい。   That is, although the said metal thin film transfer sheet 1 uses a commercial item normally, you may produce (for example, form the metal thin film 1a on the surface of the peeling base material 1b by sputtering method etc.). And the said metal thin film 1a is later formed in the wiring pattern 11 (refer FIG. 4), Although the material is not specifically limited, Usually, copper is used. Although the thickness of the metal thin film 1a is not particularly limited, it is within the range of 1.0 to 5.0 μm from the viewpoint of shortening the distance between the core layer 2b to be formed later and the surface (upper surface) of the metal thin film 1a. It is preferable. If this distance is less than 1.0 μm, the wiring pattern 11 (see FIG. 4) to be formed later is likely to break, and if the distance exceeds 5.0 μm, the propagation efficiency of the optical signal L becomes insufficient. It is. Further, the peeling substrate 1b is subjected to a peeling treatment on the contact surface with the metal thin film 1a, so that the peeling from the metal thin film 1a is easy. Although it does not specifically limit as the peeling base material 1b, Usually, a resin sheet or a metal sheet is used. The thickness of the release substrate 1b is not particularly limited, but is preferably in the range of 10 to 50 μm from the viewpoint of obtaining rigidity to the extent that the handleability of the metal thin film transfer sheet 1 is improved in the thinnest possible range.

上記第１クラッド層２ａおよび第２クラッド層２ｃの形成材料としては、例えば、エポキシ樹脂が用いられる。また、それ以外の形成材料としては、ポリイミド樹脂前駆体等があげられる。なお、第１クラッド層２ａの形成材料と第２クラッド層２ｃの形成材料とは、同じであってもよいし、異なっていてもよい。   As a material for forming the first cladding layer 2a and the second cladding layer 2c, for example, an epoxy resin is used. Other forming materials include polyimide resin precursors and the like. The forming material of the first cladding layer 2a and the forming material of the second cladding layer 2c may be the same or different.

上記コア層２ｂの形成材料としては、例えば、感光性エポキシ樹脂があげられる。また、それ以外の形成材料としては、感光性ポリイミド前駆体等があげられる。   Examples of the material for forming the core layer 2b include a photosensitive epoxy resin. Other forming materials include photosensitive polyimide precursors and the like.

なお、光導波路２を構成する関係から、コア層２ｂは第１クラッド層２ａおよび第２クラッド層２ｃよりも屈折率が高い必要があるが、この屈折率の調整は、例えば、エポキシ樹脂の種類の選択や組成比率を調整して行うことができる。具体的には、コア層２ｂの屈折率と第１クラッド層２ａおよび第２クラッド層２ｃの屈折率との関係、すなわち、両者の比屈折率差Δ〔比屈折率差Δ＝（ｎコア−ｎクラッド）／ｎコア：ｎ＝屈折率〕は、通常、０．１〜５．０％の範囲であればよい。   In addition, from the relationship which comprises the optical waveguide 2, the core layer 2b needs to have a higher refractive index than the 1st cladding layer 2a and the 2nd cladding layer 2c, but adjustment of this refractive index is, for example, the kind of epoxy resin And the composition ratio can be adjusted. Specifically, the relationship between the refractive index of the core layer 2b and the refractive indexes of the first cladding layer 2a and the second cladding layer 2c, that is, the relative refractive index difference Δ [specific refractive index difference Δ = (n core− n clad) / n core: n = refractive index] is usually in the range of 0.1 to 5.0%.

そして、このようにして準備された上記金属薄膜転写シート１および各種形成材料を用いて、つぎのようにして、光電気混載基板を製造する。   Then, using the metal thin film transfer sheet 1 prepared in this way and various forming materials, an opto-electric hybrid board is manufactured as follows.

すなわち、図２に示すように、上記金属薄膜転写シート１の金属薄膜１ａの表面（図２では下面）に、第１クラッド層２ａの形成材料であるエポキシ樹脂ワニス等を、乾燥後の膜厚が好ましくは１〜３０μｍ、特に好ましくは５〜２０μｍとなるよう塗布し、乾燥させることにより、エポキシ樹脂からなる樹脂層を形成する。上記塗布方法としては、スピンコート法やキャスティング法等の一般的な成膜方法を用いることができる。ついで、ＵＶ硬化、加熱することにより上記樹脂層中の残存溶媒の除去および硬化反応を完結させることにより、上記金属薄膜転写シート１の金属薄膜１ａの表面にエポキシ樹脂製の第１クラッド層２ａを形成する。なお、通常は、図２に図示したものを上下逆さまにした状態で、第１クラッド層２ａが形成される。   That is, as shown in FIG. 2, an epoxy resin varnish or the like, which is a material for forming the first cladding layer 2a, is formed on the surface (the lower surface in FIG. 2) of the metal thin film 1a of the metal thin film transfer sheet 1 after drying. Is preferably 1 to 30 μm, particularly preferably 5 to 20 μm, and dried to form a resin layer made of an epoxy resin. As the coating method, a general film forming method such as a spin coating method or a casting method can be used. Next, the first clad layer 2a made of epoxy resin is formed on the surface of the metal thin film 1a of the metal thin film transfer sheet 1 by completing the removal of the residual solvent in the resin layer and the curing reaction by UV curing and heating. Form. In general, the first cladding layer 2a is formed with the one shown in FIG. 2 turned upside down.

つぎに、図３に示すように、上記金属薄膜転写シート１の剥離基材１ｂを金属薄膜１ａから剥離し、その剥離により露呈した金属薄膜１ａの表面（第１クラッド層２ａとは反対側の表面）に、フォトレジストを用いて、金属製配線パターンと同じパターンのエッチング用レジスト３を形成する。   Next, as shown in FIG. 3, the peeling substrate 1b of the metal thin film transfer sheet 1 is peeled from the metal thin film 1a, and the surface of the metal thin film 1a exposed by the peeling (on the side opposite to the first cladding layer 2a). Etching resist 3 having the same pattern as the metal wiring pattern is formed on the surface) using a photoresist.

ついで、図４に示すように、エッチング液を用いて、エッチング用レジスト３以外の部分の（エッチング用レジスト３から露出している）金属薄膜１ａを溶解し除去する。その後、エッチング用レジスト３を除去する。これにより、所定パターンの金属製配線パターン１１を形成する。   Next, as shown in FIG. 4, the metal thin film 1 a (exposed from the etching resist 3) other than the etching resist 3 is dissolved and removed using an etching solution. Thereafter, the etching resist 3 is removed. Thereby, the metal wiring pattern 11 of a predetermined pattern is formed.

つぎに、図５に示すように、上記第１クラッド層２ａの表面（図５では下面）に、コア層２ｂの形成材料である感光性エポキシ樹脂ワニス等を、乾燥後の膜厚が好ましくは２〜６０μｍ、特に好ましくは６〜５０μｍとなるよう塗布し、初期乾燥によりコア層２ｂとなる感光性エポキシ樹脂層を形成する。ついで、所望のパターンが得られるよう、感光性ポリイミド樹脂前駆体層上にフォトマスクを載置してその上方から紫外線を照射する。この紫外線の照射における露光量は１０００〜１００００ｍＪ／ｃｍ2 である。その後、光反応を完結させるために、Post Exposure Bake（ＰＥＢ）と呼ばれる露光後の熱処理を行い、現像液を用いて現像を行う（ウェットプロセス法）。そして、現像によって得られた所望のパターンをイミド化するために、通常熱処理を行う。この際の加熱温度は、一般的に１００〜１５０℃である。このようにして硬化することにより、ポリイミド樹脂製のパターンとなるコア層２ｂを形成する。 Next, as shown in FIG. 5, a photosensitive epoxy resin varnish, which is a material for forming the core layer 2b, is preferably formed on the surface of the first cladding layer 2a (the lower surface in FIG. 5) after drying. The photosensitive epoxy resin layer to be the core layer 2b is formed by initial coating so as to be 2 to 60 μm, particularly preferably 6 to 50 μm. Next, a photomask is placed on the photosensitive polyimide resin precursor layer so as to obtain a desired pattern, and ultraviolet rays are irradiated from above. The exposure amount in this ultraviolet irradiation is 1000 to 10000 mJ / cm 2 . Thereafter, in order to complete the photoreaction, post-exposure heat treatment called Post Exposure Bake (PEB) is performed, and development is performed using a developer (wet process method). And in order to imidize the desired pattern obtained by image development, it heat-processes normally. The heating temperature at this time is generally 100 to 150 ° C. By curing in this way, the core layer 2b to be a polyimide resin pattern is formed.

その後、コア層２ｂの表面（下面および側面）を覆うように、第２クラッド層２ｃを、上記第１クラッド層２ａの形成と同様にして形成する。なお、通常は、図５に図示したものを上下逆さまにした状態で、コア層２ｂおよび第２クラッド層２ｃが形成される。   Thereafter, the second cladding layer 2c is formed in the same manner as the formation of the first cladding layer 2a so as to cover the surface (lower surface and side surfaces) of the core layer 2b. Normally, the core layer 2b and the second cladding layer 2c are formed with the one shown in FIG. 5 turned upside down.

そして、図６に示すように、レーザ加工，ダイヤモンドブレードを用いたダイシング等により、コア層２ｂの所定位置（図６では、左右両側部分）を、上記第２クラッド層２ｃの側から、光軸に対して傾斜した光路変換ミラー（傾斜面）２１に形成する。この実施の形態では、コア層２ｂと第２クラッド層２ｃとからなる積層部分を断面三角形に切削し、その断面三角形の斜面の一部を上記光路変換ミラー２１としている。また、左右の上記光路変換ミラー２１の形成位置は、後で説明する発光素子Ａおよび受光素子Ｂ（図７参照）の下方位置である。このようにして、上記光電気混載基板が製造される。なお、通常は、図６に図示したものを上下逆さまにした状態で、光路変換ミラー２１が形成される。   Then, as shown in FIG. 6, the predetermined position of the core layer 2b (the left and right side portions in FIG. 6) is moved from the second clad layer 2c side to the optical axis by laser processing, dicing using a diamond blade, or the like. Are formed on an optical path conversion mirror (inclined surface) 21 that is inclined with respect to. In this embodiment, the laminated portion composed of the core layer 2b and the second cladding layer 2c is cut into a triangular cross section, and a part of the slope of the triangular cross section is used as the optical path conversion mirror 21. The left and right optical path conversion mirrors 21 are formed at positions below light emitting elements A and light receiving elements B (see FIG. 7), which will be described later. In this way, the opto-electric hybrid board is manufactured. Normally, the optical path conversion mirror 21 is formed with the one shown in FIG. 6 turned upside down.

このようにして製造された上記光電気混載基板には、図７に示すように、光路変換ミラー２１の上方位置に形成されている金属製配線パターン１１に、発光素子Ａおよび受光素子Ｂが接続される。   As shown in FIG. 7, the light-emitting element A and the light-receiving element B are connected to the metal wiring pattern 11 formed above the optical path conversion mirror 21 in the opto-electric hybrid board manufactured as described above. Is done.

そして、上記光電気混載基板による光路変換は、つぎのようにして行われる。すなわち、発光素子Ａから下方に発せられた光信号Ｌは、上記光電気混載基板の第１クラッド層２ａの表面から入射し、第１クラッド層２ａ内を透過した後、コア層２ｂの一方（図７では左側）の光路変換ミラー２１で反射し（光路を９０°変換し）、コア層２ｂ内に導かれ、再度、他方（図７では右側）の光路変換ミラー２１で反射し（光路を９０°変換し）、上方の受光素子Ｂに伝達される。   The optical path conversion by the opto-electric hybrid board is performed as follows. That is, the optical signal L emitted downward from the light emitting element A is incident from the surface of the first cladding layer 2a of the opto-electric hybrid board, passes through the first cladding layer 2a, and then passes through one of the core layers 2b ( Reflected by the optical path conversion mirror 21 on the left side in FIG. 7 (the optical path is converted by 90 °), guided into the core layer 2b, and reflected again by the optical path conversion mirror 21 on the other side (right side in FIG. 7) (the optical path is changed). 90 °) and transmitted to the upper light receiving element B.

この光路変換では、図９に示す従来の光電気混載基板による光路変換と比較すると、金属製配線パターン１１形成用の基板５０がないため、コア層２ｂと受光素子Ｂとの間の距離が短く、光信号Ｌの伝搬効率が向上している。さらに、この実施の形態では、発光素子Ａとコア層２ｂとの間の距離も短くなっており、光信号Ｌの伝搬効率がより向上している。   In this optical path conversion, the distance between the core layer 2b and the light receiving element B is short because there is no substrate 50 for forming the metal wiring pattern 11 compared with the optical path conversion by the conventional opto-electric hybrid board shown in FIG. The propagation efficiency of the optical signal L is improved. Furthermore, in this embodiment, the distance between the light emitting element A and the core layer 2b is also shortened, and the propagation efficiency of the optical signal L is further improved.

なお、上記実施の形態では、発光素子Ａも、光導波路２の表面に形成した金属製配線パターン１１に接続させたが、図８に示すように、発光素子Ａを、コア層２ｂの光軸上でその一端面（図８では左端面）の外側近傍に配置し、コア層２ｂの一方（図７では左側）の光路変換ミラー２１を形成しないようにしてもよい。   In the above embodiment, the light emitting element A is also connected to the metal wiring pattern 11 formed on the surface of the optical waveguide 2, but the light emitting element A is connected to the optical axis of the core layer 2b as shown in FIG. The optical path conversion mirror 21 on one side (left side in FIG. 7) of the core layer 2b may not be formed by disposing it near the outside of one end surface (left end surface in FIG. 8).

また、上記実施の形態では、金属薄膜転写シート１の金属薄膜１ａの表面に第１クラッド層２ａを形成した後に、金属薄膜転写シート１の剥離基材１ｂを金属薄膜１ａから剥離し、エッチング用レジスト３の形成を経て金属製配線パターン１１を形成したが、上記剥離基材１ｂを剥離する順序は、これに限定されるものではなく、コア層２ｂを形成した後でもよいし、第２クラッド層２ｃを形成した後でもよいし、光路変換ミラー２１を形成した後でもよい。そして、いずれの場合でも、上記剥離基材１ｂを剥離した後は、上記実施の形態と同様に、エッチング用レジスト３の形成を経て金属製配線パターン１１を形成する。   Moreover, in the said embodiment, after forming the 1st clad layer 2a in the surface of the metal thin film 1a of the metal thin film transfer sheet 1, the peeling base material 1b of the metal thin film transfer sheet 1 is peeled from the metal thin film 1a, and it is for etching. Although the metal wiring pattern 11 is formed through the formation of the resist 3, the order in which the peeling base material 1b is peeled off is not limited to this, and may be after the core layer 2b is formed, or the second cladding. It may be after the layer 2c is formed or after the optical path conversion mirror 21 is formed. In any case, after the peeling substrate 1b is peeled off, the metal wiring pattern 11 is formed through the formation of the etching resist 3 in the same manner as in the above embodiment.

つぎに、実施例について比較例および従来例と併せて説明する。   Next, examples will be described together with comparative examples and conventional examples.

〔金属薄膜転写シート〕
市販の金属薄膜転写シート〔三井金属社製、ＭｉｃｏＴｈｉｎ ＭＴＳＤ−Ｈ（３μｍ）〕を準備した。この金属薄膜転写シートは、厚み３μｍの銅薄膜が、厚み２５μｍの剥離基材（銅箔）の表面に形成されているものである。 [Metal thin film transfer sheet]
A commercially available metal thin film transfer sheet [MicoThin MTSD-H (3 μm), manufactured by Mitsui Kinzoku Co., Ltd.] was prepared. In this metal thin film transfer sheet, a copper thin film having a thickness of 3 μm is formed on the surface of a peeling substrate (copper foil) having a thickness of 25 μm.

〔第１クラッド層および第２クラッド層の形成材料〕
ＢＰＥＦＧ（長瀬産業社販売、オンコートＥＸ−１０２０）２０ｇ、セロキサイド２０２１Ｐ（ダイセル化学社製）４．１ｇ、ＳＰ−１７０（旭電化社製）０．２４ｇを、シクロへキサン８．４７ｇに溶解することにより、第１クラッド層および第２クラッド層の形成材料である樹脂溶液を得た。 [Formation materials of the first cladding layer and the second cladding layer]
20 g of BPEFG (sold by Nagase Sangyo Co., Ltd., ONCOAT EX-1020), 4.1 g of Celoxide 2021P (manufactured by Daicel Chemical Industries), and 0.24 g of SP-170 (manufactured by Asahi Denka) are dissolved in 8.47 g of cyclohexane. As a result, a resin solution as a material for forming the first cladding layer and the second cladding layer was obtained.

〔コア層の形成材料〕
ＢＰＥＦＧ（長瀬産業社販売、オンコートＥＸ−１０２０）２０ｇ、ＢＰＦＧ（長瀬産業社販売、オンコートＥＸ−１０１０）１０ｇ、ＳＰ−１７０（旭電化社製）０．３ｇを、シクロへキサン２０ｇに溶解することにより、コア層の形成材料である樹脂溶液を得た。 [Material for forming the core layer]
Dissolve 20 g of BPEFG (sold by Nagase Sangyo Co., Ltd., on coat EX-1020), 10 g of BPFG (sold by Nagase Sangyo Co., Ltd., on coat EX-1010), 0.3 g of SP-170 (manufactured by Asahi Denka) in 20 g of cyclohexane. As a result, a resin solution as a material for forming the core layer was obtained.

〔光電気混載基板の製造〕
上記実施の形態（図１〜図６参照）と同様にして、光電気混載基板を製造した。このとき、第１クラッド層および第２クラッド層の厚みをそれぞれ２０μｍとし、コア層を直線状のパターンに形成し、その寸法を、厚み５０μｍ，幅５０μｍ，長さ５ｃｍとした。また、光路変換ミラーは、レーザ加工により、光軸に対して４５°傾斜した傾斜面に形成した。なお、金属製配線パターンを形成する際に用いるエッチング液として、５％ＮａＨＣＯ3 水溶液を用いた。 [Manufacture of opto-electric hybrid board]
An opto-electric hybrid board was manufactured in the same manner as in the above embodiment (see FIGS. 1 to 6). At this time, the thickness of each of the first cladding layer and the second cladding layer was 20 μm, the core layer was formed in a linear pattern, and the dimensions were 50 μm thickness, 50 μm width, and 5 cm length. The optical path conversion mirror was formed on an inclined surface inclined by 45 ° with respect to the optical axis by laser processing. Incidentally, as the etching solution used in forming the metal wiring pattern, with 5% NaHCO 3 aq.

上記実施例１において、金属薄膜転写シートとして、銅薄膜の厚みが５μｍのもの〔三井金属社製、ＭｉｃｏＴｈｉｎ ＭＴＳＤ−Ｈ（３μｍ）〕を用いた。それ以外は、実施例１と同様にした。   In Example 1 above, a metal thin film transfer sheet having a copper thin film thickness of 5 μm [MicoThin MTSD-H (3 μm), manufactured by Mitsui Kinzoku Co., Ltd.] was used. Otherwise, the same procedure as in Example 1 was performed.

〔製造方法の比較例１〕
上記実施例１において、金属薄膜転写シートに代えて、圧延銅箔（厚み１８μｍ）を用いた。それ以外は、実施例１と同様にした。すなわち、上記圧延銅箔の片面に第１クラッド層を形成した後、圧延銅箔をエッチングすることにより、所定パターンの金属製配線パターンを形成した。そして、上記第１クラッド層の表面にコア層および第２クラッド層を形成した後、光路変換ミラーを形成した。 [Comparative Example 1 of Manufacturing Method]
In Example 1 described above, a rolled copper foil (thickness: 18 μm) was used instead of the metal thin film transfer sheet. Otherwise, the same procedure as in Example 1 was performed. That is, after forming the first cladding layer on one side of the rolled copper foil, the rolled copper foil was etched to form a predetermined metal wiring pattern. Then, after forming the core layer and the second cladding layer on the surface of the first cladding layer, an optical path conversion mirror was formed.

〔従来例１〕
図９に示す従来の光電気混載基板を準備した。この光電気混載基板において、金属製配線パターンが形成された基板の厚みは１４３μｍ、金属製配線パターンの厚みは１８μｍだった。また、光導波路を構成する第１クラッド層，第２クラッド層およびコア層の厚みはそれぞれ実施例１と同様であった。また、基板と光導波路との間の接着剤層の厚みは１０μｍだった。 [Conventional example 1]
A conventional opto-electric hybrid board shown in FIG. 9 was prepared. In this opto-electric hybrid board, the thickness of the board on which the metal wiring pattern was formed was 143 μm, and the thickness of the metal wiring pattern was 18 μm. The thicknesses of the first cladding layer, the second cladding layer, and the core layer constituting the optical waveguide were the same as those in Example 1. The thickness of the adhesive layer between the substrate and the optical waveguide was 10 μm.

〔光伝搬損失の測定〕
このようにして得られた実施例１，２ならびに比較例１および従来例１の光電気混載基板に、発光素子および受光素子を実装し、光信号を、発光素子から発し、コア層を経て、受光素子に伝達させた。そして、そのときの光伝搬損失を測定した。その結果、実施例１の光伝搬損失は３．０ｄＢ、実施例２のそれは３．４ｄＢ、比較例１のそれは８．２ｄＢ、従来例１のそれは９．５ｄＢであった。 (Measurement of optical propagation loss)
A light emitting element and a light receiving element are mounted on the opto-electric hybrid boards of Examples 1 and 2 and Comparative Example 1 and Conventional Example 1 obtained in this way, and an optical signal is emitted from the light emitting element, through the core layer, It was transmitted to the light receiving element. And the optical propagation loss at that time was measured. As a result, the optical propagation loss of Example 1 was 3.0 dB, that of Example 2 was 3.4 dB, that of Comparative Example 1 was 8.2 dB, and that of Conventional Example 1 was 9.5 dB.

このように、実施例１，２および比較例１の光電気混載基板は、従来例１の光電気混載基板よりも、光伝搬損失が小さいことから、光信号の伝搬効率が高いことがわかる。なかでも、実施例１，２の光電気混載基板は、比較例１の光電気混載基板よりも、光信号の伝搬効率がさらに高いことがわかる。   Thus, it can be seen that the opto-electric hybrid boards of Examples 1 and 2 and Comparative Example 1 have higher optical signal propagation efficiency because the optical propagation loss is smaller than that of the opto-electric hybrid board of Conventional Example 1. In particular, it can be seen that the opto-electric hybrid boards of Examples 1 and 2 have higher optical signal propagation efficiency than the opto-electric hybrid board of Comparative Example 1.

本発明の光電気混載基板の製造方法の一実施の形態を模式的に示す説明図である。It is explanatory drawing which shows typically one Embodiment of the manufacturing method of the opto-electric hybrid board | substrate of this invention. 上記光電気混載基板の製造方法を模式的に示す説明図である。It is explanatory drawing which shows typically the manufacturing method of the said opto-electric hybrid board | substrate. 上記光電気混載基板の製造方法を模式的に示す説明図である。It is explanatory drawing which shows typically the manufacturing method of the said opto-electric hybrid board | substrate. 上記光電気混載基板の製造方法を模式的に示す説明図である。It is explanatory drawing which shows typically the manufacturing method of the said opto-electric hybrid board | substrate. 上記光電気混載基板の製造方法を模式的に示す説明図である。It is explanatory drawing which shows typically the manufacturing method of the said opto-electric hybrid board | substrate. 上記光電気混載基板の製造方法を模式的に示す説明図である。It is explanatory drawing which shows typically the manufacturing method of the said opto-electric hybrid board | substrate. 本発明の光電気混載基板に発光素子および受光素子を実装した状態を模式的に示す説明図である。It is explanatory drawing which shows typically the state which mounted the light emitting element and the light receiving element on the opto-electric hybrid board of this invention. 本発明の光電気混載基板の他の実施の形態に発光素子および受光素子を実装した状態を模式的に示す説明図である。It is explanatory drawing which shows typically the state which mounted the light emitting element and the light receiving element in other embodiment of the opto-electric hybrid board of this invention. 従来の光電気混載基板を模式的に示す説明図である。It is explanatory drawing which shows the conventional opto-electric hybrid board | substrate typically.

符号の説明Explanation of symbols

２ａ 第１クラッド層
２ｂ コア層
２ｃ 第２クラッド層
１１ 配線パターン
２１ 光路変換ミラー 2a First cladding layer 2b Core layer 2c Second cladding layer 11 Wiring pattern 21 Optical path conversion mirror

Claims (4)

光信号伝達手段と、電気信号伝達手段とを有した光電気混載基板であって、上記光信号伝達手段が、第１クラッド層と第２クラッド層とでコア層を挟持するとともに被包し、そのコア層の所定位置を光路変換ミラーに形成してなる光導波路からなり、上記電気信号伝達手段が、上記第１クラッド層の表面に絶縁層を介さず直接形成した金属製配線パターンからなることを特徴とする光電気混載基板。   An opto-electric hybrid board having an optical signal transmission means and an electric signal transmission means, wherein the optical signal transmission means sandwiches and encloses the core layer between the first cladding layer and the second cladding layer, The core layer is made of an optical waveguide formed on a light path conversion mirror at a predetermined position, and the electric signal transmission means is made of a metal wiring pattern formed directly on the surface of the first cladding layer without an insulating layer. An opto-electric hybrid board. 上記金属製配線パターンの厚みが、１．０〜５．０μｍの範囲内である請求項１記載の光電気混載基板。   2. The opto-electric hybrid board according to claim 1, wherein the metal wiring pattern has a thickness in the range of 1.0 to 5.0 [mu] m. 上記請求項１記載の光電気混載基板を製造する方法であって、剥離基材の表面に金属薄膜が形成された金属薄膜転写シートを準備し、その金属薄膜の表面に第１クラッド層を形成する工程と、上記剥離基材を金属薄膜から剥離する工程と、上記金属薄膜をエッチングにより所定の配線パターンに形成する工程と、上記第１クラッド層の表面にコア層を形成する工程と、このコア層の表面を覆うように第２クラッド層を形成する工程と、上記コア層の所定位置を光路変換ミラーに形成する工程とを備えていることを特徴とする光電気混載基板の製造方法。   A method for producing an opto-electric hybrid board according to claim 1, wherein a metal thin film transfer sheet having a metal thin film formed on the surface of a peeling substrate is prepared, and a first cladding layer is formed on the surface of the metal thin film. A step of peeling the release substrate from the metal thin film, a step of forming the metal thin film into a predetermined wiring pattern by etching, a step of forming a core layer on the surface of the first cladding layer, A method for manufacturing an opto-electric hybrid board, comprising: a step of forming a second cladding layer so as to cover a surface of the core layer; and a step of forming a predetermined position of the core layer on an optical path conversion mirror. 上記請求項２記載の光電気混載基板を製造する方法であって、上記金属薄膜の厚みが、１．０〜５．０μｍの範囲内である請求項１記載の光電気混載基板の製造方法。   The method for manufacturing an opto-electric hybrid board according to claim 2, wherein the thickness of the metal thin film is in the range of 1.0 to 5.0 μm.
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