JP2007104065A - Dielectric device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dielectric device capable of easily adjusting the inter-stage coupling between resonator units adjacent to each other while satisfying a requirement of downsizing. <P>SOLUTION: A one-side end of a first hole 41 of the resonator unit Q1 is open to a one-side 21 of a dielectric base and the first hole 41 is bored from the side 21 toward its opposed outer side 22. A second hole of the resonator unit Q1 opens to an outer side 24 not opposed to the side 21 and is connected to the first hole 41 inside the dielectric base 1. A one-side end of a first hole 42 of the resonator unit Q2 is open to a one-side 21 of the dielectric base and the first hole 41 is bored from the side 21 toward its opposed outer side 22. A second hole 52 of the resonator unit Q2 opens to an outer side 23 not opposed to the side 21 and is connected to the first hole 42 inside the dielectric base 1. The resonator units Q1, Q2 are laid out in a relationship wherein the first hole 41 of the resonator unit Q1 is adjacent to the second hole 52 of the resonator unit Q2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a dielectric resonator and a dielectric device such as a dielectric filter or a duplexer.

  This type of dielectric device is used in a high frequency region such as a quasi-microwave band, a microwave band, a millimeter wave band, or a submillimeter wave band. More specific application examples include satellite communication devices, mobile communication devices, wireless communication devices, high frequency communication devices, or base stations for these communication devices.

  In a conventional dielectric device of this type, taking a dielectric filter as an example, a plurality of resonance parts are configured by sharing a dielectric substrate, and the plurality of resonance parts are coupled by capacitive coupling or inductive coupling. A predetermined frequency component is extracted by coupling between stages.

For example, in the dielectric filter disclosed in Patent Document 1, each of the two resonating portions has a T-shaped hole structure including first and second holes. Specifically, the first hole is directed from one surface of the dielectric substrate to the facing outer surface. One end of the second hole opens on the outer surface not facing the one surface, and the first hole intersects the other end in a T-shape. In these resonating parts, the first hole of one resonating part is arranged adjacent to the first hole of the other resonating part, and a coupling capacitance is generated between the first holes.
Japanese Patent No. 3329450

  However, in the dielectric filter disclosed in Patent Document 1, it is difficult to ensure the adjustment width of the coupling capacitance between the first holes. That is, there is a strong demand for miniaturization of the dielectric filter, and the outer dimensions of the dielectric substrate are limited. Therefore, in the structure in which the first hole of one resonance part and the first hole of the other resonance part are arranged adjacent to each other, the interval between the first holes cannot be increased, and the adjustment width of the coupling capacitance Cannot be secured. For this reason, a limit arises in adjusting the interstage coupling between the resonance parts.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a dielectric device that can easily adjust interstage coupling between adjacent resonators while satisfying the demand for miniaturization. .

  In order to solve the above-described problems, a dielectric device according to the present invention includes a dielectric substrate and at least two resonating parts. The dielectric substrate includes an outer conductor film on one surface and the other outer surface.

  Each of the two resonating portions includes a first hole and a second hole. The first hole is provided in the dielectric base, has one end opened on the one surface, directed from the one surface toward the opposite outer surface, and provided with a first inner conductor therein.

  The second hole is provided in the dielectric substrate, opens to an outer surface not facing the one surface, is connected to the first hole inside the dielectric substrate, and has a second inner conductor inside. The second inner conductor has one end connected to the first inner conductor inside the dielectric substrate and the other end connected to the outer conductor film.

  The other end portion of the first hole protrudes in the depth direction from the connection region with the second hole.

  The two resonating parts are arranged such that the first hole of one resonating part is adjacent to the second hole of the other resonating part.

  In the above-described dielectric device according to the present invention, each of the two resonating portions includes a first hole and a second hole. One end of the first hole opens on one surface of the dielectric substrate, and extends from the one surface toward the opposing outer surface. The second hole opens on the outer surface not facing the one surface, and is continuous with the first hole inside the dielectric substrate. Furthermore, the other end of the first hole protrudes in the depth direction from the connection region with the second hole. Accordingly, each resonance part has a hole structure in which the first and second holes intersect, and unlike the case where the holes are provided in a straight line, either the first hole or the second hole is shortened. , The amount can be supplemented by the length of the other hole to ensure a predetermined physical length. For this reason, the length of the dielectric substrate can be shortened and the miniaturization can be achieved.

  Furthermore, as a characteristic configuration of the present invention, the two resonating portions are arranged in such a relationship that the first hole of one resonating portion is adjacent to the second hole of the other resonating portion. According to such an interdigital structure, even if the outer dimensions of the dielectric substrate are limited, the interval between the first hole of one resonance part and the second hole of the other resonance part can be increased or decreased. Therefore, it is possible to secure the adjustment width of the capacitive coupling generated between the first and second holes. Therefore, it is possible to easily adjust the interstage coupling between the resonating parts while satisfying the demand for miniaturization. Further, the terminal arrangement can be diversified by the interdigital structure.

  Typically, for each resonator, the first hole has a width dimension that is greater than the width dimension of the second hole. In this case, by applying an arrangement structure in which the first hole of one resonance part and the second hole of the other resonance part are adjacent to each other, a large interval for adjustment is provided between the first and second holes. Can be secured.

  As a configuration of the resonating portion, the first hole may be such that the first inner conductor is separated from the outer conductor film by a gap on the one surface. According to such a configuration, the resonance unit operates as a λ / 4 resonator.

  As another configuration of the resonating portion, the first hole may have the first inner conductor connected to the outer conductor film on the one surface. According to such a configuration, the resonance unit operates as a λ / 2 resonator.

  As a specific configuration of the dielectric device, a terminal may be provided on the outer surface of the dielectric substrate and electrically coupled to the first inner conductor via the dielectric substrate. Specifically, the terminal may be electrically coupled to the first inner conductor provided at the other end of the first hole via the dielectric base.

  The dielectric device according to the present invention can be used as a device that widely covers a resonator, an oscillator, a dielectric filter, or a duplexer (also referred to as a duplexer or an antenna duplexer). For example, when used as a dielectric filter, two terminals are provided on the outer surface of the dielectric substrate, one terminal is electrically coupled to one of the two resonating parts, and the other terminal is connected to the other of the two resonating parts. Electrically coupled. These terminals are used as input / output terminals, and are all insulated from the outer conductor film.

  As described above, according to the present invention, it is possible to provide a dielectric device that can easily adjust the interstage coupling between adjacent resonating parts while satisfying the demand for miniaturization.

  1 is a perspective view showing an embodiment of a dielectric device according to the present invention, FIG. 2 is a perspective view of the dielectric device shown in FIG. 1 as viewed from the back side, and FIG. 3 is shown in FIGS. It is a perspective view which shows the structure of the 1st hole and 2nd hole in a dielectric material apparatus. The illustrated dielectric device includes a dielectric substrate 1 and two resonance parts Q1 and Q2, and is used as a dielectric filter.

  The dielectric substrate 1 is made of a known dielectric ceramic, and includes first and second surfaces 21 and 22 facing the thickness direction Z, and third and fourth surfaces 23 and 24 facing the length direction X. And, it is formed in a substantially hexahedron shape having fifth and sixth surfaces 25 and 26 facing in the width direction Y. The thickness direction Z, the length direction X, and the width direction Y are defined as three orthogonal directions. In the dielectric substrate 1, most of the second to sixth surfaces 22 to 26 are covered with the outer conductor film 3 except for the first surface 21. The outer conductor film 3 generally has copper or silver as a main component and is formed by means such as baking or plating.

  The resonance parts Q1 and Q2 share the dielectric base 1 and are integrated via the dielectric base 1.

  4 is a cross-sectional view taken along line 4-4 of FIG. With particular reference to FIG. 4, the resonance unit Q1 will be described. The resonating part Q1 includes a first hole 41 and a second hole 51. The first hole 41 is provided in the dielectric substrate 1, and one end opens in the first surface 21, and extends from the first surface 21 toward the second surface 22, which is the opposite surface.

  The first hole 41 includes a first inner conductor 61 inside. The first inner conductor 61 is formed as an electrode film by the same material and means as the outer conductor film 3. Unlike this, the first inner conductor 61 may be filled so as to fill a part or the whole of the first hole 41. In the illustrated embodiment, the first inner conductor 61 is separated from the outer conductor film 3 by the gap g11 on the first surface 21, but unlike the first inner conductor 61, the first inner conductor 61 The surface 21 may be continuous with the outer conductor film 3. A dielectric layer 711 having a thickness d11 exists between the first inner conductor 61 provided on the inner surface of the first hole 41 and the outer conductor film 3 provided on the third surface 23. A capacitance C11 is formed.

  The second hole 51 is also provided in the dielectric substrate 1. One end of the second hole 51 opens in the fourth surface 24, and travels from the fourth surface 24 toward the third surface 23 that is the opposite surface. The other end of the second hole 51 is continuous with the first hole 41 inside the dielectric substrate 1.

  The second hole 51 includes a second inner conductor 81 inside. The second inner conductor 81 has one end opened to the fourth surface 24 continuing to the outer conductor film 3 and the other end continuing to the first inner conductor 61 inside the dielectric substrate 1. The second inner conductor 81 is formed of the same material and means as the first inner conductor 61. The second inner conductor 81 may be filled so as to fill a part or the whole of the second hole 51.

  The second hole 51 has a substantially circular shape with an inner diameter D5, and the width dimension viewed in the width direction Y matches the inner diameter D5 (hereinafter referred to as the width dimension D5). As shown in FIG. 1, the first hole 41 has a substantially rectangular hole shape in which the width dimension D <b> 11 in the width direction Y is larger than the dimension D <b> 12 in the length direction X. The width dimension D11 of the first hole 41 is larger than the width dimension D5 of the second hole 51. Therefore, the other end of the second hole 51 is connected to the first hole 41 within the width dimension D11 of the first hole 41. As for the 1st hole 41, it is preferred that a corner is circular. In this figure, D11> D12, but it is also possible to satisfy D11 ≦ D12.

  Furthermore, the distance d10 between the fourth surface 24 in which the second hole 51 is open and the first hole 41 has a third surface 23 facing the second hole 51, and the first surface It is longer than the distance d11 with the hole 41 (see FIG. 4). That is, d10> d11.

  The other end 91 of the first hole 41 protrudes from the connection region with the second hole 51 in the direction of the second surface 22 by a distance Z11 (see FIG. 4).

  A terminal 11 is provided on the second surface 22 with an insulating gap g12 from the outer conductor film 3 (see FIGS. 2 and 4). The terminal 11 is coupled to the first inner conductor 61 provided at the other end 91 of the first hole 41 by a capacitance C12 through a dielectric layer 712 having a thickness d12. In the drawing, the terminal 11 is formed over the second surface 22 and the fifth surface 25, but unlike this, the terminal 11 may be formed over the second surface 22 and the third surface 23. Alternatively, it may be formed only in the second surface 22.

  FIG. 5 is a cross-sectional view taken along line 5-5 of FIG. With particular reference to FIG. 5, the resonance unit Q2 will be described. The resonating part Q2 has substantially the same structure as the resonating part Q1, and redundant description may be omitted.

  The resonance part Q <b> 2 includes a first hole 42 and a second hole 52. One end of the first hole 42 opens in the first surface 21, and travels from the first surface 21 toward the second surface 22 that is the opposite surface.

  The first hole 42 includes a first inner conductor 62 inside. In the illustrated embodiment, the first inner conductor 62 is separated from the outer conductor film 3 by the gap g21 on the first surface 21, but the first inner conductor 62 is different from the first inner conductor 62 in the first surface 21. The surface 21 may be continuous with the outer conductor film 3. A dielectric layer 721 having a thickness d21 exists between the first inner conductor 62 provided on the inner surface of the first hole 42 and the outer conductor film 3 provided on the fourth surface 24. A capacitance C21 is formed.

  One end of the second hole 52 opens in the third surface 23 and extends from the third surface 23 toward the fourth surface 24, which is the opposite surface. The other end of the second hole 52 is continuous with the first hole 42 inside the dielectric substrate 1.

  The second hole 52 includes a second inner conductor 82 inside. The second inner conductor 82 has one end opened to the third surface 23 continuing to the outer conductor film 3 and the other end continuing to the first inner conductor 62 inside the dielectric substrate 1.

  The second hole 52 has a substantially circular shape with an inner diameter D6, and the width dimension viewed in the width direction Y matches the inner diameter D6 (hereinafter referred to as the width dimension D6). As shown in FIG. 1, the first hole 42 has a substantially rectangular hole shape in which the width dimension D <b> 21 in the width direction Y is larger than the dimension D <b> 22 in the length direction X. The width dimension D21 of the first hole 42 is larger than the width dimension D6 of the second hole 52. Therefore, the other end of the second hole 52 is connected to the first hole 42 within the width dimension D 21 of the first hole 42. In this figure, D21> D22, but it is also possible to satisfy D21 ≦ D22.

  Further, the distance d20 between the third surface 23 where the second hole 52 is open and the first hole 42 is such that the fourth surface 24 facing the second hole 52 and the first surface It is longer than the distance d21 with the hole 42 (see FIG. 5). That is, d20> d21.

  The other end 92 of the first hole 42 protrudes from the connection region with the second hole 52 in the direction of the second surface 22 by a distance Z12 (see FIG. 5).

  A terminal 12 is provided on the second surface 22 with an insulating gap g22 from the outer conductor film 3 (see FIGS. 2 and 5). The terminal 12 is coupled to the first inner conductor 62 provided at the other end 92 of the first hole 42 via the dielectric layer 722 having a thickness d22 by the capacitance C22. In the drawing, the terminal 12 is formed over the second surface 22 and the sixth surface 26, but unlike this, the terminal 12 may be formed over the second surface 22 and the fourth surface 24. Alternatively, it may be formed only in the second surface 22.

  FIG. 6 is a cross-sectional view taken along line 6-6 of FIG. The arrangement relationship between the resonating parts Q1 and Q2 will be described with particular reference to FIGS.

  The resonance parts Q1 and Q2 are arranged such that the first hole 41 of the resonance part Q1 and the second hole 52 of the resonance part Q2 are adjacent to each other. Specifically, the first hole 41 of the resonance part Q1 extends in the thickness direction Z of the dielectric substrate 1, while the second hole 52 of the resonance part Q2 extends in the length direction X. Next to each other with an interval d21.

  Similarly, the second hole 51 of the resonance part Q1 and the first hole 42 of the resonance part Q2 are adjacent to each other. Specifically, the second hole 51 of the resonance part Q1 extends in the length direction X of the dielectric substrate 1, while the first hole 42 of the resonance part Q2 extends in the thickness direction Z. Next to each other with an interval d22.

  As described above, the resonating parts Q1 and Q2 each include a first hole and a second hole. Referring to FIG. 4, the resonance portion Q1 will be described as a representative example. The first hole 41 has one end opened on the first surface 21 of the dielectric substrate 1 and is opposed to the first surface 21. It goes in the direction of the second surface 22. The second hole 51 opens in the fourth surface 24 that does not face the first surface 21, and is continuous with the first hole 41 inside the dielectric substrate 1. Furthermore, the other end of the first hole 41 projects in the depth direction from the connection region with the second hole 51.

  Therefore, the resonance portion Q1 (Q2) has a hole structure in which the first hole 41 (42) and the second hole 51 (52) intersect, and unlike the case where the holes are provided in a straight line, the first hole Either one of 41 (42) or the second hole 51 (52) can be shortened, and that amount can be supplemented by the length of the other hole to ensure a predetermined physical length. For this reason, the length dimension X0 of the dielectric substrate 1 can be shortened, and downsizing can be achieved.

  From the viewpoint of miniaturization, the width Y0 of the dielectric substrate 1 is also desired to be shortened. However, if a structure in which the first holes 41 and 42 of the resonance parts Q1 and Q2 are arranged adjacent to each other in the limited width dimension Y0, the interval Δd between the first holes 41 and 42 cannot be increased. As a result, the adjustment range of the coupling capacitance cannot be secured (see FIG. 6). For this reason, a limit arises in adjusting the interstage coupling between the resonance parts.

  In the present invention, as described with reference to FIGS. 3 and 6, the resonance parts Q1 and Q2 are arranged in such a relationship that the first hole 41 of the resonance part Q1 is adjacent to the second hole 52 of the resonance part Q2. (See FIGS. 3 and 6). According to such a structure, even if the width dimension Y0 of the dielectric substrate 1 is limited, the distance d21 between the first hole 41 of the resonance part Q1 and the second hole 52 of the resonance part Q2 is widened or narrowed. Therefore, the adjustment width of the capacitive coupling generated between the first hole 41 and the second hole 52 can be ensured. Accordingly, it is possible to easily adjust the interstage coupling between the resonating parts Q1 and Q2 while satisfying the demand for miniaturization.

  Similarly, the second hole 51 of the resonance part Q1 and the first hole 42 of the resonance part Q2 are adjacent to each other. Therefore, even if the width Y0 of the dielectric substrate 1 is limited, the distance d22 between the second hole 51 of the resonance part Q1 and the first hole 42 of the resonance part Q2 can be widened or narrowed. Therefore, it is possible to secure the adjustment width of the capacitive coupling generated between the second hole 51 and the first hole 42.

  In the resonance part Q1, the width dimension D11 of the first hole 41 is larger than the width dimension D5 of the second hole 51, and the resonance part Q2 also has the width dimension D21 of the first hole 42 in the second hole 52. It is larger than the width dimension D6. Therefore, by applying an arrangement structure in which the first hole 41 of the resonance part Q1 and the second hole 52 of the resonance part Q2 are adjacent to each other, the first hole 41 of the resonance part Q1 and the first hole 41 of the resonance part Q2 are applied. A large distance d21 for adjustment can be secured between the two holes 52. The same applies to the second hole 51 of the resonance part Q1 and the first hole 42 of the resonance part Q2, and a large interval d22 for adjustment can be secured.

  On the other hand, if a structure in which the first holes 41 and 42 of the resonance parts Q1 and Q2 are arranged next to each other is applied, the interval Δd between the first holes 41 and 42 is narrowed, and the adjustment range of the coupling capacitance is increased. It cannot be secured (see FIG. 6).

  Next, frequency characteristics of the dielectric device shown in FIGS. 1 to 6 will be described with specific examples. 1 to 6, the dielectric substrate 1 is made of a dielectric material having a relative dielectric constant εr = 36.8 and has a substantially rectangular parallelepiped shape. The shape of the dielectric substrate 1 was such that the plane area viewed on the third surface 23 (3.3 mm × 1.65 mm) and the length X0 was 4.15 mm. The width dimensions D11 and D21 of the first holes 41 and 42 are both 1.2 mm, and the width dimensions D5 and D6 of the second holes 51 and 52 are both 0.5 mm. This is an example.

  The dielectric device of the comparative example has the same configuration as the dielectric device shown in FIGS. 1 to 6 except that the first holes 41 and 42 of the resonance parts Q1 and Q2 are arranged adjacent to each other.

  FIG. 7 shows the frequency attenuation characteristics of the example and the comparative example. In the figure, the horizontal axis represents frequency (MHz) and the vertical axis represents attenuation (dB). A curve U1 shows the characteristics of the example, and a curve U2 shows the characteristics of the comparative example.

  Referring to FIG. 7, the dielectric device (curve U2) of the comparative example has a pass band W2 of 2,044 MHz to 2,320 MHz, whereas the dielectric device (curve U1) of the example has 2,010 MHz to 2,420 MHz. Passband W1. Thus, it can be seen that the dielectric device of the example can achieve a wider band in comparison with the dielectric device of the comparative example.

  The dielectric device according to the present invention can be used as a device that covers a wide range of dielectric resonators, dielectric filters, or duplexers. Among these, the dielectric filter has been described in detail with reference to FIGS. For the sake of space, the description of the dielectric filter is not limited to the above, but it can be provided with more resonance parts, and there can be many combinations of the illustrated and described embodiments, etc. Is self-explanatory.

  Next, an aspect of the dielectric device according to the present invention as a duplexer will be described.

  8 is a perspective view showing another embodiment of the dielectric device according to the present invention, FIG. 9 is a perspective view of the dielectric device shown in FIG. 8 as seen from the back side, and FIG. 10 is shown in FIGS. It is a perspective view which shows the structure of the 1st hole and 2nd hole in a dielectric material apparatus. In the figure, the same reference numerals are given to the same components as those shown in the previous drawings, and the duplicated description will be omitted as much as possible.

  The illustrated duplexer has seven resonance parts Q1 to Q7. Each of the resonating parts Q1 to Q7 is integrated by sharing the dielectric substrate 1. The dielectric substrate 1 is covered with the outer conductor film 3 in most of the outer surface except for the first surface 21.

  Among the resonance parts Q1 to Q6, the resonance part Q1 is a combination of the first hole 41 and the second hole 51, the resonance part Q2 is a combination of the first hole 42 and the second hole 52, and the resonance part Q3 is Each of the combinations of the first hole 43 and the second hole 53 is included. The resonance unit Q4 includes a combination of the first hole 44 and the second hole 54. The resonance part Q5 includes a combination of the first hole 45 and the second hole 55, and the resonance part Q6 includes a combination of the first hole 46 and the second hole 56, respectively.

  The first holes 41 to 47 open in the first surface 21 for any of the resonance parts Q1 to Q7. Among the resonating parts Q1 to Q7, the second holes 51 to 54 of the resonating parts Q1 to Q4 are opened in the fourth surface 24, and the second holes 55 to 57 of the resonating parts Q5 to Q7 are the third holes. Open to the surface 23.

  As for the resonance portion Q4, the second hole 54 has a structure including a large diameter portion and a small diameter portion, and one end of the large diameter portion viewed in the length direction X opens in the fourth surface 24. . One end of the small diameter portion viewed in the length direction X is connected to the other end of the large diameter portion, and the other end is connected to the first hole 44.

  The first holes 41 to 47 have first inner conductors 61 to 67, respectively, and the second holes 51 to 57 have second inner conductors 81 to 87, respectively.

  Next, an arrangement relationship between adjacent resonance parts among the resonance parts Q1 to Q7 will be described in order.

  First, regarding the arrangement relationship between the resonance parts Q1 and Q2, the resonance parts Q1 and Q2 are arranged such that the first hole 41 of the resonance part Q1 and the first hole 42 of the resonance part Q2 are adjacent to each other. Yes. Specifically, both the first hole 41 of the resonance part Q1 and the first hole 42 of the resonance part Q2 extend in the thickness direction Z of the dielectric substrate, and they are adjacent to each other with an interval in the width direction Y therebetween. Fit.

  Furthermore, the second hole 51 of the resonance part Q1 and the second hole 52 of the resonance part Q2 are adjacent to each other. Specifically, the second hole 51 of the resonance part Q1 and the second hole 52 of the resonance part Q2 both extend in the length direction X of the dielectric substrate, and are adjacent to each other with an interval in the width direction Y. .

  The arrangement relationship between the resonance units Q2 and Q3 and the arrangement relationship between the resonance units Q3 and Q4 are the same as the arrangement relationship between the resonance units Q1 and Q2, and a duplicate description is omitted.

  Next, regarding the arrangement relationship between the resonance parts Q4 and Q5, the resonance parts Q4 and Q5 are arranged such that the first hole 44 of the resonance part Q4 and the second hole 55 of the resonance part Q5 are adjacent to each other. ing. Specifically, the first hole 44 of the resonance part Q4 extends in the thickness direction Z of the dielectric substrate, while the second hole 55 of the resonance part Q5 extends in the length direction X. Adjacent at a distance.

  Furthermore, the second hole 54 of the resonance part Q4 and the first hole 45 of the resonance part Q5 are adjacent to each other. Specifically, the second hole 54 of the resonance part Q4 extends in the length direction X of the dielectric substrate, while the first hole 45 of the resonance part Q5 extends in the thickness direction Z. Adjacent at a distance.

  Next, regarding the arrangement relationship between the resonance parts Q5 and Q6, the resonance parts Q5 and Q6 are arranged such that the first hole 45 of the resonance part Q5 and the first hole 46 of the resonance part Q6 are adjacent to each other. ing. Furthermore, the first hole 45 of the resonance part Q5 and the first hole 46 of the resonance part Q6 are adjacent to each other. The details of the arrangement relationship between the resonance portions Q5 and Q6 are the same as the arrangement relationship between the resonance portions Q1 and Q2, except that the second holes 85 and 86 are opened in the third surface 23.

  Finally, the arrangement relationship between the resonance units Q6 and Q7 is the same as the arrangement relationship between the resonance units Q5 and Q6, and redundant description is omitted.

  Terminals 11, 14, and 17 are provided on the second surface 22 of the dielectric substrate. The terminal 11 is coupled to the first hole 41 of the resonance part Q1 through a dielectric layer made of a dielectric substrate. Similarly, the terminal 14 is coupled to the first hole 44 of the resonance part Q4 via a dielectric layer made of a dielectric substrate, and the terminal 17 is connected to the resonance part Q7 via a dielectric layer made of a dielectric substrate. It is coupled to the first hole 47.

  The terminals 11, 14, and 17 are disposed on the second surface 22 in a state of being electrically insulated from the outer conductor film 3 by the insulation gaps g12, g42, and g72. The terminals 11, 14, and 17 can be used for imposing on the mounting substrate.

  Although illustration is omitted, it is needless to say that various structures exemplified in the dielectric filter can be applied to the duplexer.

1 is a perspective view showing an embodiment of a dielectric device according to the present invention. It is the perspective view which looked at the dielectric material device shown in FIG. 1 from the back side. FIG. 3 is a perspective view showing configurations of a first hole and a second hole in the dielectric device shown in FIGS. 1 and 2. FIG. 4 is a cross-sectional view taken along line 4-4 of FIG. FIG. 5 is a cross-sectional view taken along line 5-5 of FIG. FIG. 6 is a cross-sectional view taken along line 6-6 of FIG. It is a figure which shows a frequency attenuation characteristic about the dielectric device which concerns on the Example of FIGS. 1-6, and the dielectric device of a comparative example. It is a perspective view which shows another embodiment of the dielectric material device concerning this invention. It is the perspective view which looked at the dielectric material device shown in FIG. 8 from the back side. FIG. 10 is a perspective view showing configurations of a first hole and a second hole in the dielectric device shown in FIGS. 8 and 9.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Dielectric base | substrate 3 Outer conductor film Q1, Q2 Resonance part 41, 42 1st hole 51, 52 2nd hole

Claims (8)

A dielectric device including a dielectric substrate and at least two resonating parts,
The dielectric substrate includes an outer conductor film on one surface and the other outer surface,
The two resonating portions each include a first hole and a second hole,
The first hole is provided in the dielectric substrate, and has one end opened on the one surface, directed from the one surface toward the opposite outer surface, and provided with a first inner conductor therein,
The second hole is provided in the dielectric base, opens to an outer surface not facing the one surface, is connected to the first hole inside the dielectric base, and has a second inner conductor inside. Provided, one end of the second inner conductor is connected to the first inner conductor inside the dielectric base, and the other end is connected to the outer conductor film,
The other end of the first hole protrudes in the depth direction from the connection region with the second hole,
The two resonance parts are arranged such that the first hole of one resonance part is adjacent to the second hole of the other resonance part.
Dielectric device. The dielectric device according to claim 1, comprising:
The first hole has a width dimension larger than the width dimension of the second hole.
Dielectric device. A dielectric device according to claim 1 or 2, wherein
In the first hole, the first inner conductor is separated from the outer conductor film by a gap on the one surface.
Dielectric device. A dielectric device according to claim 1 or 2, wherein
In the first hole, the first inner conductor is connected to the outer conductor film on the one surface.
Dielectric device. The dielectric device according to any one of claims 1 to 4, comprising a terminal,
The terminal is provided on the outer surface of the dielectric substrate, and is electrically coupled to the first inner conductor via the dielectric substrate.
Dielectric device. The dielectric device according to any one of claims 1 to 4, comprising a terminal,
The terminal is provided on the outer surface of the dielectric base and is electrically coupled to the second inner conductor provided at the other end of the second hole.
Dielectric device. The dielectric device according to claim 1, wherein the dielectric device is a dielectric filter. The dielectric device according to claim 1, wherein the dielectric device is a duplexer.