JP2007103126A - El display device, method of manufacturing el display device and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an EL display device capable of minimizing changes of a structure caused by employment of the structure using only a one-side conduction type transistor. <P>SOLUTION: This EL display device is composed by stacking, on a substrate 20, a thin-film circuit layer 21 including a first transistor, a second transistors 33, a selection wire, a power wire and a cathode wire, and an EL element layer 22 including an EL element. The EL element layer is equipped with: a positive electrode 40 connected to the power wire 36; barrier ribs 39 surrounding the positive electrode; an EL layer 42 formed on the positive electrode surrounded by the barrier ribs; reversed taper-like separators 43 formed on the barrier ribs for partitioning respective pixel parts; and a negative electrode 44 formed in an area partitioned by the separators to cover the EL layer and the barrier ribs and each connected to the other-side source-drain of the second transistor by partially piercing the barrier ribs. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an EL display device and an electronic device including a pixel portion including an electroluminescence (EL) element.

  An organic EL display device in which a pixel circuit is configured using an organic EL element is known (see, for example, Patent Document 1). This organic EL display device has excellent features such as self-emission, high brightness, high viewing angle, thinness, high-speed response, and low power consumption, and a peripheral drive circuit is formed using polysilicon TFTs (thin film transistors). This has attracted attention because it can achieve further miniaturization and weight reduction.

  In order to reduce the cost of the organic EL display device as described above, a method of configuring each pixel circuit using only one of n-channel and p-channel transistors as a transistor has been studied. . At this time, in order to enjoy more cost reduction effects by adopting the configuration using only one of the conduction type transistors, the structure of the organic EL display device is changed due to adopting such a configuration. (Design changes) and manufacturing process changes need to be minimized. Such a problem is not limited to the organic EL display device but is common to the inorganic EL display device.

Japanese Patent Laid-Open No. 11-40358

Therefore, an object of the present invention is to provide an EL display device capable of minimizing structural changes caused by adopting a configuration using only one conduction type transistor.
Another object of the present invention is to provide a method for manufacturing an EL display device capable of minimizing a change in the manufacturing process caused by adopting a configuration using only one conduction type transistor. For the purpose.

  Here, the phrase “source / drain” in this specification will be described. Generally, a transistor includes three terminals of a gate, a source, and a drain. Among these, for each of the source and drain terminals, the relative relationship between potentials applied to these terminals and the conductivity type of the transistor (n-channel). Or p channel), and is not uniquely determined. For example, in the case of a p-channel transistor, a terminal having a low potential is “drain” and a terminal having a high potential is “source”, and in the case of an n-channel transistor, a terminal having a high potential is “drain” and a terminal having a low potential is “ "Source". Accordingly, in the present invention, terminals that function as either a source or a drain are collectively referred to as “source / drain”. Based on this premise, the present invention will be described below.

  The first aspect of the present invention is an EL display device including a plurality of pixel portions, wherein each of the pixel portions has a gate connected to a selection line and one source / drain connected to a data line. A first conductivity type transistor; a first conductivity type second transistor having a gate connected to the other source / drain of the first transistor and a source / drain connected to the cathode line; And an EL element (for example, an organic EL element) connected between the other source / drain of the second transistor. Each pixel portion includes, on a substrate, a thin film circuit layer including the first transistor, the second transistor, the selection line, the power supply line, and the cathode line, and an EL element layer including the EL element. It is constructed by stacking. The EL element layer includes an anode connected to the power supply line, a partition wall surrounding the anode, an EL layer provided on the anode surrounded by the partition wall, and provided on the partition wall. A reverse-tapered separator that is divided at each time, and provided in a region divided by the separator so as to cover the EL layer and the partition, and partly penetrates the partition and the other of the second transistor. And a cathode connected to the source / drain.

  When adopting a configuration using only one conduction type (for example, n-channel type) transistor, it is possible to take a current path from the power supply side to the EL element and the source / drain of the transistor as in the present invention. desirable. However, in this case, the anode and cathode of the EL element need to be separated for each pixel portion and made independent. At this time, by adopting a structure in which reverse-tapered separators that divide each pixel portion are employed as described above, an independent cathode can be easily formed for each pixel portion by forming a conductive film from above the separator. Can be formed. Therefore, according to the configuration of the present invention, it is possible to minimize the change in the structure caused by adopting the configuration using only one conduction type transistor.

  Preferably, the separator is made of a negative photosensitive resin to which a light absorbing dye is added.

  Thereby, a reverse taper-shaped separator can be formed easily.

  Preferably, each of the pixel portions has a first conductivity type in which a gate is connected to a reset line, one source / drain is connected to one terminal of a holding capacitor, and the other source / drain is connected to a cathode line. The thin film circuit layer further includes the third transistor.

  According to a second aspect of the present invention, the first conduction type first transistor includes a plurality of pixel portions, each of which has a gate connected to the selection line and one source / drain connected to the data line. A first conduction type second transistor having a gate connected to the other source / drain of the first transistor and one source / drain connected to a cathode line; a power supply line; the other of the second transistor EL element (for example, organic EL element) connected between the source and drain of the EL display device, wherein the first transistor and the second transistor are formed on a substrate. A thin film circuit layer forming step of forming a thin film circuit layer including the selection line, the power supply line, and the cathode line, and forming an EL element layer including the EL element on the thin film circuit layer. L includes a device layer forming step. The EL element layer forming step includes a first step of forming an anode connected to the power supply line, a second step of forming a partition surrounding the anode on the upper side of the thin film circuit layer, and penetrating the partition. A third step of forming an opening exposing the other source / drain of the second transistor, and a fourth step of forming a reverse-tapered separator for each of the pixel portions on the partition. A fifth step of forming an EL layer on the anode surrounded by the partition; and depositing a conductive material from the upper side of the partition to provide the EL layer in the region partitioned by the separator; And a sixth step of forming a cathode that covers the partition and a part of which is connected to the other source / drain of the second transistor through the opening.

  When adopting a configuration using only one conduction type (for example, n-channel type) transistor, it is possible to take a current path from the power supply side to the EL element and the source / drain of the transistor as in the present invention. desirable. However, in this case, the anode and cathode of the EL element need to be separated for each pixel portion and made independent. At this time, it is possible to easily form an independent cathode for each pixel portion by forming a reverse-tapered separator that separates each pixel portion as described above and depositing a conductive material from the upper side. It becomes. Therefore, according to the method of the present invention, it is possible to minimize the change in the manufacturing process due to the adoption of the configuration using only one conduction type transistor.

  Preferably, in the fourth step, the separator is formed by applying a negative photosensitive resin to which a light-absorbing dye is added on the partition, and exposing and developing the photosensitive resin.

  According to this method, a reverse taper type separator can be easily formed.

  Preferably, in the sixth step, the conductive material is deposited by physical vapor deposition.

  Thereby, the process of depositing a conductive material from the upper side of the partition can be easily realized.

  Preferably, each of the pixel portions has a first conductivity type in which a gate is connected to a reset line, one source / drain is connected to one terminal of a holding capacitor, and the other source / drain is connected to a cathode line. And the thin film circuit layer formed in the thin film circuit layer forming step further includes the third transistor.

  A third aspect of the present invention is an electronic apparatus including the above-described EL device as a display unit. Here, the “electronic device” includes any device including an EL device as a display unit, and includes a display device, a television device, an electronic paper, a clock, a calculator, a mobile phone, a portable information terminal, and the like.

  Embodiments of the present invention will be described below. Hereinafter, an organic EL display device will be described as an example of the EL display device according to the present invention.

  FIG. 1 is a block diagram illustrating a configuration example of an organic EL display device according to an embodiment. An organic EL display device 100 shown in FIG. 1 includes a display area 101 in which a plurality of pixel portions 102 are arranged in a matrix, and driver circuits 103 to 106 arranged around the display area 101. . The driver circuit 103 supplies a selection signal YSEL to each selection line 107. The driver circuit 104 supplies a reset signal YERS to each reset line 108. The driver circuit 105 supplies a data signal VDAT to each data line 109. The driver circuit 106 supplies a drive voltage VOEL to each power line 110.

  FIG. 2 is a circuit diagram for explaining a pixel circuit constituting each pixel unit 102. The pixel circuit shown in FIG. 2 includes a first transistor 10, a second transistor 11, a third transistor 12, a holding capacitor 13, and an organic EL element 14. The conduction types of the transistors 10 to 12 are all n-channel types.

  The gate of the first transistor 10 is connected to a selection line 107 that transmits a selection signal (scanning signal) YSEL given from the outside. The first transistor 10 has one source / drain connected to a data line 109 for transmitting a data signal VDAT given from the outside. When the selection signal YSEL becomes a predetermined potential, the first transistor 10 is turned on, and charges corresponding to the data signal VDAT transmitted through the data line 109 are stored in the holding capacitor 13.

  The second transistor 11 has a gate connected to the other source / drain of the first transistor 10, and one source / drain connected to the cathode line 111. Here, the cathode line 111 in this embodiment is connected to a ground terminal (GND) (not shown), for example. When a voltage corresponding to the amount of charge stored in the holding capacitor 13 is applied to the gate of the second transistor 11, a drive voltage VOEL corresponding to the gate voltage is supplied to the organic EL element 14.

  The holding capacitor 13 is connected between the other source / drain of the first transistor 10 and the cathode line 111. The holding capacitor 13 is for holding a potential corresponding to the data signal VDAT transmitted through the data line 109 when the first transistor 10 is turned on.

  The organic EL element 14 is connected between the power supply line 110 and the other source / drain of the second transistor 11. In the present embodiment, in consideration of the characteristics of the n-channel second transistor 11, a current path of the organic EL element 14 and the second transistor 11 is configured in order from the power supply line 110 on the power supply side. More specifically, the anode side of the organic EL element 14 is connected to the power supply line 110, and the cathode side of the organic EL element 14 is connected to the second transistor 11.

  The third transistor 12 has a gate connected to the reset line 108, one source / drain connected to one terminal of the holding capacitor 13, and the other source / drain connected to the cathode line 111. When the reset signal YERS transmitted through the reset line 108 reaches a predetermined potential, the third transistor 12 is turned on, and the charge accumulated in the holding capacitor 13 is discharged.

  FIG. 3 is a partial cross-sectional view illustrating the structure of the organic EL display device 100 of the present embodiment. In FIG. 3, a cross-sectional view of one pixel portion 102 is shown. The organic EL display device 100 according to this embodiment includes a first transistor 10, a second transistor 11, a third transistor 12, a holding capacitor 13, a selection line 107, a power line 110, and a cathode on a substrate 20 made of glass, plastic, or the like. The thin film circuit layer 21 including the line 111 and the organic EL element layer 22 including the organic EL element 14 are stacked.

  The thin film circuit layer 21 includes insulating films 31, 32, 34, 37, wiring films 35, 36, 50, 52, 53, and a semiconductor film 51.

The insulating film 31 is formed on the substrate 20 as a base insulating film and has a function of suppressing impurity diffusion from the substrate 20. The insulating film 31 is made of an inorganic thin film such as a SiO ₂ film or a SiN film.

The semiconductor film 51 is a thin film made of polycrystalline silicon or the like formed on the insulating film 31 and shaped into a predetermined shape (for example, a rectangular shape), and functions as a component of the thin film transistor 33. High conductivity regions (n ⁺ regions) 54 into which impurity elements are implanted at a high concentration are formed on both sides of the semiconductor film 51. The thin film transistor 33 functions as the second transistor 11 described above. Although illustration of the first transistor 10, the third transistor 12, and the holding capacitor 13 is omitted, the first transistor 10, the third transistor 12, and the holding capacitor 13, for example, are formed on the near side or the far side with respect to the paper surface of this drawing.

The insulating film 32 functions as a gate insulating film of the thin film transistor 33 and is formed on the insulating film 31 so as to cover the wiring film 50. The insulating film 32 is made of an inorganic thin film such as a SiO ₂ film or a SiN film.

  The wiring film 50 functions as a gate of the thin film transistor 33 and is formed above the insulating film 32. The wiring film 50 is made of a conductive material such as aluminum, tantalum, or chromium.

  The wiring film 35 functions as the above-described cathode line 111 and is formed on the upper side of the insulating film 32. The wiring film 35 is made of a conductive material such as aluminum, tantalum, or chromium.

  The insulating film 34 is provided on the upper side of the insulating film 32 and functions as a flattening film for flattening the upper side of the thin film transistor 33 and the wirings 35 and 50 and facilitating the formation of the organic EL element layer 22. In order to achieve the function, the insulating film 34 is formed to a thickness of about 2 μm to 5 μm, for example. As the insulating film 34, an inorganic film such as a SOG (spin on glass) film or a PSG (phospho silicate glass) film may be used, or an organic film such as a polyimide resin film or an acrylic resin film may be used. A laminated film of may be used.

  The wiring film 36 functions as the power supply line 110 described above, and is formed on the insulating film 34. The wiring film 36 is made of a conductive material such as aluminum, tantalum, or chromium.

  The wiring film 52 is disposed on the upper side of the insulating film 34 and is connected to one high conductive region 54 of the semiconductor film 51 through the insulating film 34, so that the thin film transistor 33 (that is, the second transistor 11). It functions as one source / drain. The wiring film 52 is made of a conductive material such as aluminum, tantalum, or chromium.

  The wiring film 53 is disposed above the insulating film 34 and is connected to the other highly conductive region 54 of the semiconductor film 51 through the insulating film 34, so that the thin film transistor 33 (that is, the second transistor 11). It functions as the other source / drain. Further, the wiring film 53 also penetrates in other portions of the insulating film 34 and is connected to the wiring film 35 that functions as the cathode line 111. The wiring film 53 is made of a conductive material such as aluminum, tantalum, or chromium.

  The insulating film 37 is provided on the upper side of the insulating film 34 and functions as a planarizing film for flattening the upper side of each of the wirings 36, 52, 53, etc. and facilitating the formation of the organic EL element layer 22. In order to achieve the function, the insulating film 37 is formed to a thickness of about 2 μm, for example. As this insulating film 37, an inorganic film such as an SOG (spin on glass) film or a PSG (phospho silicate glass) film may be used, or an organic film such as a polyimide resin film or an acrylic resin film may be used. A laminated film of may be used.

  The organic EL element layer 22 is provided on the upper side of the thin film circuit layer 21 and includes an insulating film 38, a partition wall 39, an anode 40, a wiring film 41, an EL layer 42, and a separator 43. .

  The insulating film 38 is provided on the upper side of the insulating film 37 and electrically insulates between the wirings 36, 52, 53 and the like and the components on the upper side. As the insulating film 38, an inorganic film such as an SOG film or a PSG film, or an organic film such as a polyimide resin film or an acrylic resin film is used. The insulating film 38 has an opening that exposes the anode 40.

  The anode 40 is formed on the upper side of the insulating film 37, and a part of the anode 40 is provided through the insulating film 37 and connected to the wiring film 36 that functions as the power supply line 110. The anode 40 is made of a light-transmitting conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

  The partition 39 is formed so as to surround the periphery of the anode 40. The partition wall 39 has such a height that the dropped liquid composition does not overflow when the EL layer 42 is formed by the ink jet method (droplet discharge method). Any material can be used as the material constituting the partition 39 as long as it has insulating properties, but a resin having heat resistance and solvent resistance, such as an acrylic resin and a polyimide resin, is preferably used.

  The EL layer 42 is provided on the anode 40 surrounded by the partition walls 39. The EL layer 42 generally has a laminated structure. A typical example is a laminated structure of “hole transport layer / light emitting layer / electron transport layer”. Furthermore, a hole injection layer may be provided between the hole transport layer and the electrode, or an electron injection layer may be provided between the electrode of the electron transport layer.

  The separator 43 is provided on the upper side of the partition wall 39 and is divided for each pixel portion. As shown in the figure, the separator 43 is formed in a cross-sectional shape in which the diameter becomes smaller as it is closer to the surface (bottom surface) in contact with the partition wall 39, that is, in a reverse taper shape. Such a separator 43 can be formed using, for example, a negative photosensitive resin to which a light absorbing dye is added. Details of the method of forming the reverse tapered separator 43 will be described later.

  The cathode 44 is provided in a region (pixel region) divided by the separator 43 and is formed so as to cover the EL layer 42 and the partition 39. A part of the cathode 44 penetrates the partition wall 39 and is connected to the wiring film 52 functioning as the other source / drain of the thin film transistor 33 (that is, the second transistor 11) through the wiring film 41. The cathode 44 is made of a conductive material such as aluminum.

  The organic EL display device 100 of the present embodiment has the above-described configuration. Next, a method for manufacturing the organic EL display device 100 will be described.

  4-6 is process sectional drawing explaining the manufacturing method of the organic electroluminescent display apparatus 100 of one Embodiment. The manufacturing method described below is roughly divided into a thin film circuit layer forming step (FIGS. 4A to 5B) for forming the thin film circuit layer 21 on the substrate 20 and an upper side of the thin film circuit layer 21. And an organic EL element layer forming step (FIG. 5C to FIG. 6C) for forming the organic EL element layer 22.

(Thin film circuit layer forming process)
First, an insulating film 31 made of a SiO ₂ film or the like is formed on one surface of the substrate 20 by sputtering or the like, and then an island-shaped semiconductor film 51 is formed on the insulating film 31 (FIG. 4A). . The semiconductor film 51 is obtained, for example, by polycrystallizing an amorphous silicon film formed by a plasma CVD method or the like by a laser crystallization method and patterning it into an island shape by photolithography and etching. Although not shown, a semiconductor film that should constitute the first transistor 10 and the like is also formed in the same manner (hereinafter the same).

Next, a mask 60 that covers a region where a channel formation region is to be formed is formed over the semiconductor film 51, and ion implantation is performed from above through the mask 60, so that the impurity element is implanted at a high concentration. A region (n ⁺ region) 54 is formed (FIG. 4B). The mask 60 is formed using, for example, a photosensitive polyimide film. The mask 60 is removed after ion implantation is performed.

Next, an insulating film 32 (gate insulating film) covering the semiconductor film 51 is formed over the substrate 20, and a wiring film 35 and a wiring film 50 are formed at predetermined positions on the upper surface of the insulating film 32 (FIG. 4C). ). As the insulating film 32, for example, a SiO ₂ film is formed by a plasma CVD method using TEOS (tetraethoxysilane) as a source gas. Each of the wiring films 35 and 50 is obtained, for example, by forming a conductive film such as aluminum on the entire upper surface of the insulating film 32 and then patterning the conductive film into a desired shape by photolithography and etching.

Next, ion implantation is performed on the semiconductor film 51 through the wiring film 50 functioning as a gate electrode, thereby adjacent to the high conductivity region 54 and a conductive region in which an impurity element is implanted at a low concentration ( n ⁻ region) 55 is formed (FIG. 4D).

  Next, an insulating film 34 is formed above the insulating film 32, and an opening 61 for exposing the highly conductive region 54 of the semiconductor film 51 and an opening 62 for exposing the wiring film 35 are formed in the insulating film 34, respectively (see FIG. FIG. 4 (E)). As the insulating film 34, for example, an organic film such as a polyimide resin film or an acrylic resin film is formed by a coating method. The openings 61 and 62 are formed by photolithography and etching.

  Next, each wiring film 36, 52, 53 is formed (FIG. 5A). Specifically, each of the wiring films 36, 52, and 53 is formed into a desired shape by photolithography and etching after a conductive film such as aluminum is formed in the entire upper surface of the insulating film 34 and in the openings 61 and 62, for example. It is obtained by patterning.

  Next, an insulating film 37 that covers the wiring films 36, 52, and 53 is formed on the insulating film 34, and an opening 64 that exposes the wiring film 36 and an opening 63 that exposes the wiring film 52 are formed in the insulating film 37. Each is formed (FIG. 5B). As the insulating film 37, for example, an organic film such as a polyimide resin film or an acrylic resin film is formed by a coating method. The openings 63 and 64 are formed by photolithography and etching.

(Organic EL element layer forming step)
Next, the anode 40 and the wiring film 41 are formed on the upper side of the insulating film 37 (FIG. 5C). Specifically, the anode 40 and the wiring film 41 are formed into a desired shape by forming a transparent conductive film such as ITO in the whole upper surface of the insulating film 37 and in the openings 63 and 64, and then forming the transparent conductive film by photolithography and etching. It is obtained by patterning. As illustrated, the anode 40 is connected to the wiring film 36 functioning as the power supply line 110 through the opening 64.

  Next, an insulating film 38 that covers the anode 40 and the wiring film 41 is formed above the insulating film 37, and an opening 66 that exposes the anode 40 and an opening 65 that exposes the wiring film 41 are formed in the insulating film 38, respectively. (FIG. 5D). As the insulating film 38, for example, an organic film such as a polyimide resin film or an acrylic resin film is formed by a coating method. The openings 65 and 66 are formed by photolithography and etching.

  Next, a partition wall 39 surrounding the anode 40 is formed above the insulating film 38 (that is, above the thin film circuit layer 21) (FIG. 6A). The partition wall 39 is formed of, for example, an acrylic resin or a polyimide resin, and then the opening 68 and the wiring film 41 (the other source and the second transistor 11 of the second transistor 11) are exposed through the partition wall 39 by photolithography and etching. It is obtained by forming an opening 67 exposing a wiring film functioning as a drain).

  Next, reverse-tapered separators 43 for partitioning the pixel portions 102 are formed on the partition walls 39 (FIG. 6B). Such a separator 43 can be formed using, for example, a negative photosensitive resin to which a light absorbing dye is added. These are negative photosensitive resins added with a dye that absorbs exposure light, and when exposed, the intensity of the exposure light irradiated to the lower side (substrate 20 side) inside the photosensitive resin decreases. Therefore, the difference in strength causes a difference in the dissolution rate in the developer, and an inversely tapered shape is obtained.

  Next, an EL layer 42 is formed over the anode 40 surrounded by the partition walls 39, and a cathode 44 is further formed (FIG. 6C). The EL layer 42 is formed by, for example, using a light emitting material such as PPV (polyparaphenylene vinylene) or Alq3 (aluminum quinolinol complex) and dropping a liquid containing the light emitting material into the partition wall 39 by a droplet discharge device. The In addition, a hole transport layer, an electron transport layer, and the like are appropriately formed (not shown). The cathode 44 is formed, for example, by depositing a conductive material such as aluminum from above the partition wall 39 by a physical vapor deposition method such as a sputtering method or a vapor deposition method. As a result, the EL layer 42 and the partition 39 are provided in a region separated by the separator 43, and a part thereof functions as the wiring film 41 (the other source / drain of the second transistor 11) through the opening 67. The cathode 44 connected to the wiring film is obtained. When the cathode 44 is formed by a sputtering method or the like by the separator 43 formed in a tapered shape, a conductive material such as aluminum as the cathode 44 can be prevented from entering the partition wall 39. Therefore, a photolithography method or the like is not used. The cathode 44 can be separated. Here, the reverse taper shape refers to an inverted trapezoidal shape in which the area of the upper surface of the separator 43 is larger than the area of the lower surface in contact with the partition wall 39. The angle formed by the upper surface of the separator 43 and the wall portion of the separator 43 (hereinafter referred to as “taper angle”) is preferably 20 ° or more and 90 ° or less. Next, it is preferably 30 ° or more and 75 ° or less, and more preferably 50 ° or more and 60 ° or less. If the taper angle is too large, the conductive material will wrap around the partition wall 39 and the cathode 44 cannot be separated. On the other hand, if the taper angle is too small, the lower surface of the separator 43 will be small, and as a result, the separator 43 will not be This is because it becomes stable.

  Through the above steps, the organic EL display device 100 according to the present embodiment is completed.

  FIG. 7 is a perspective view illustrating a specific example of an electronic apparatus including the above-described organic EL display device as a display unit. FIG. 7A is a perspective view illustrating a mobile phone which is an example of an electronic apparatus. The cellular phone 1000 includes a display unit 1001 configured using the organic EL display device 100 according to the present embodiment. FIG. 7B is a perspective view illustrating a wrist watch that is an example of an electronic apparatus. The wristwatch 1100 includes a display unit 1101 configured using the organic EL display device 100 according to the present embodiment. FIG. 7C is a perspective view illustrating a portable information processing device 1200 which is an example of an electronic device. The portable information processing device 1200 includes an input unit 1201 such as a keyboard, a main body unit 1202 in which arithmetic units and storage units are stored, and a display unit 1203 configured using the organic EL display device 100 according to the present embodiment. It has.

  As described above, according to the present embodiment, by utilizing an inversely tapered separator, the structural change caused by configuring an organic EL display device using only one conduction type transistor is minimized. It is possible to minimize changes in the manufacturing process.

  In addition, this invention is not limited to the content of embodiment mentioned above, A various deformation | transformation implementation is possible within the range of the summary of this invention. For example, in the above-described embodiment, the embodiment in which the present invention is applied to the organic EL display device has been described. However, the present invention can also be applied to an inorganic EL display device.

It is a block diagram explaining the structural example of the organic electroluminescence display of one Embodiment. It is a circuit diagram explaining the pixel circuit which comprises each pixel part. It is a fragmentary sectional view explaining the structure of an organic electroluminescence display. It is process sectional drawing explaining the manufacturing method of an organic electroluminescence display. It is process sectional drawing explaining the manufacturing method of an organic electroluminescence display. It is process sectional drawing explaining the manufacturing method of an organic electroluminescence display. It is a perspective view which shows the specific example of an electronic device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10-12 ... 1st-3rd transistor, 13 ... Holding capacitor, 14 ... Organic EL element, 20 ... Substrate, 21 ... Thin film circuit layer, 22 ... EL element layer, 31, 32, 34, 37, 38 ... Insulating film 33 ... Thin film transistor, 35, 36, 41, 50, 52, 53 ... Wiring film, 39 ... Partition, 40 ... Anode, 42 ... EL layer, 43 ... Separator, 44 ... Cathode, 51 ... Semiconductor film, 61, 62, 63, 64, 65, 66, 67, 68 ... opening, 100 ... organic EL display device, 101 ... display area, 102 ... pixel portion, 103, 104, 105, 106 ... driver circuit, 107 ... selection line, 108 ... reset Line 109 109 Data line 110 Power supply line 111 Cathode line

Claims (10)

An EL display device including a plurality of pixel units,
Each of the pixel portions includes a first conduction type first transistor having a gate connected to a selection line and one source / drain connected to a data line, and a gate connected to the other source / drain of the first transistor. Are connected, and a first conduction type second transistor having one source / drain connected to the cathode line, and an EL element connected between the power supply line and the other source / drain of the second transistor, Including,
And each of the pixel portions is
A thin film circuit layer including the first transistor, the second transistor, the selection line, the power supply line, and the cathode line, and an EL element layer including the EL element are stacked on the substrate. ,
The EL element layer is provided on an anode connected to the power supply line, a partition surrounding the anode, an EL layer provided on the anode surrounded by the partition, and on the partition. A reverse-tapered separator that is divided at each time, and is provided in a region divided by the separator so as to cover the EL layer and the partition wall, and partly penetrates the partition wall and the other of the second transistor. An EL display device comprising: a cathode connected to a source / drain.   The EL display device according to claim 1, wherein the separator is made of a negative photosensitive resin to which a light absorbing dye is added.   The EL display device according to claim 1, wherein the EL element is an organic EL element.   Each of the pixel portions has a first conductivity type third in which a gate is connected to a reset line, one source / drain is connected to one terminal of a storage capacitor, and the other source / drain is connected to a cathode line. The EL display device according to claim 1, further comprising a transistor, wherein the thin film circuit layer further includes the third transistor. A plurality of pixel portions, each of the pixel portions having a first conductive type first transistor having a gate connected to a selection line and one source / drain connected to a data line; A second transistor of the first conductivity type in which a gate is connected to the other source / drain and one source / drain is connected to the cathode line, and between the power source line and the other source / drain of the second transistor. An EL display device configured to include an EL element connected to
Forming a thin film circuit layer on the substrate, the thin film circuit layer including the first transistor, the second transistor, the selection line, the power supply line and the cathode line;
An EL element layer forming step of forming an EL element layer including the EL element on the thin film circuit layer;
Including
The EL element layer forming step includes
A first step of forming an anode connected to the power line;
A second step of forming a partition wall surrounding the anode above the thin film circuit layer;
A third step of forming an opening through the partition wall and exposing the other source / drain of the second transistor;
A fourth step of forming a reverse-tapered separator for each of the pixel portions on the partition;
A fifth step of forming an EL layer on the anode surrounded by the partition;
By depositing a conductive material from the upper side of the partition wall, the conductive material is provided in a region partitioned by the separator to cover the EL layer and the partition wall, and a part of the other of the second transistor through the opening. A sixth step of forming a cathode connected to the source / drain of
A method for manufacturing an EL display device.   The said 4th process apply | coats the negative photosensitive resin to which the light absorption pigment | dye was added on the said partition, and forms the said separator by exposing and developing with respect to the said photosensitive resin. The manufacturing method of EL display apparatus as described in 1 ..   The EL display device manufacturing method according to claim 5, wherein in the sixth step, the conductive material is deposited by a physical vapor deposition method.   The method for manufacturing an EL display device according to claim 5, wherein the EL element is an organic EL element.   Each of the pixel portions has a first conductivity type third in which a gate is connected to a reset line, one source / drain is connected to one terminal of a storage capacitor, and the other source / drain is connected to a cathode line. The method for manufacturing an EL display device according to claim 5, further comprising a transistor, wherein the thin film circuit layer formed in the thin film circuit layer forming step further includes the third transistor. An electronic apparatus comprising the EL display device according to claim 1 as a display unit.

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