JP2007093535A - Measuring method of probe card and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To resolve the problem (biased wearing), wherein unequal height at the leading edge of probes (probes) caused by polishing with polishing wafers or cleaning units for probe card capable of simultaneously inspecting two adjacent IC chips. <P>SOLUTION: By forming a spacer domain 6 and a spacer region 20, among the probe groups 3a and 3b inspecting a first test IC chips and the probe groups 4a and 4b inspecting a second test IC chips, the difference in the lengths between each probe of the probe group 3a and the probe group 4a, corresponding to the same kind of probes (input terminal group) and the probe group 3b and the probe group 4b corresponding to the same kind of probes (output terminal group), can be reduced to obtain equal length to a maximum. Also, the length (tip length), starting from the flection to the leading edge of the probe group 3a and the probe group 4b, and that between the head length the probe group 4a and the probe group 3b are set the same to a maximum. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a probe card for measuring electrical characteristics by mechanically contacting a probe (also referred to as a probe) to an input / output terminal of an IC chip, and in particular, a probe for simultaneously measuring electrical characteristics of a plurality of IC chips. Regarding cards.

  In the manufacturing process of a semiconductor device, after the wafer process is completed and an IC chip is completed in the wafer, an inspection of electrical characteristics called a probe test for determining the quality of the IC chip is performed.

  A probe card is used for this probe test. From the viewpoint of increasing the time spent for the probe test with the recent high integration of semiconductor integrated circuits, a probe card capable of simultaneously inspecting a plurality of IC chips is used.

  FIG. 4 is a schematic plan view of a conventional probe card capable of simultaneously inspecting two IC chips as viewed from above. In the probe card, a rectangular opening 101 is formed in a substantially central portion of the probe card substrate 100. In the periphery of the opening 101, probe groups 102 and 103 for making contact with corresponding input / output terminals (bonding pads, bump electrodes, etc.) of two adjacent IC chips to be measured are opened. It is arranged toward the center of the part 101. As a material of the probe groups 102 and 103, tungsten, nickel alloy or the like is used.

  The probe group 102 is arranged on the first measured IC chip side, and is divided into a probe group 102a corresponding to the input terminal group and a probe group 102b corresponding to the output terminal group. Similarly, the probe group 103 is arranged on the second measured IC chip side, and is divided into a probe group 103a corresponding to the input terminal group and a probe group 103b corresponding to the output terminal group.

  The number of probes in the probe group 102 and the probe group 103 is the same, but the number of probes in the probe groups 102b and 103b is much larger than the number of probes in the probe groups 102a and 103a. This is because certain types of IC chips (for example, LCD driver chips) have more output terminals than input terminals. For example, although not shown, if the probe groups 102a and 103a are composed of nine probes, the probe groups 102b and 103b are composed of 194 probes.

  The probe groups 102 and 103 are fixed to a probe fixing region 104 made of epoxy resin or the like. A portion where the probe group 102 is fixed is referred to as a probe fixing region 104a, and a portion where the probe group 103 is fixed is referred to as a probe fixing region 104b. In other words, the probe fixing region 104a is a region relatively closer to the first IC chip to be measured in the probe fixing region 102, and conversely, the probe fixing region 104b is the second target to be measured. This is an area on the measurement IC chip side.

  The usage state of the probe card will be described. Fig.5 (a) is an enlarged plan view which shows the use condition of the conventional probe card, FIG.5 (b) is the sectional drawing. In the probe test, a probe card is usually mounted on a device called a prober, the probe groups 102a and 102b are connected to the input terminal group 107 and output terminal group 108 of the first IC chip 105 to be measured, and the probe groups 103a and 103b are connected to the first. The input terminal group 109 and the output terminal group 110 of the second IC chip 106 to be measured are brought into contact with a predetermined stylus pressure, and a test is performed in this state based on a program preset in the test apparatus.

  However, when used many times over a long period of time, foreign materials such as finely divided aluminum metal particles and oxide of the input / output terminals adhere to the tip surfaces of the probe groups 102a, 102b, 103a, and 103b. If these foreign substances adhere excessively, the electrical contact between the probe and the input / output terminal groups 107, 108, 109, and 110 deteriorates, which adversely affects the accuracy and evaluation of the probe test.

Therefore, every time a predetermined number of probe tests are performed, it is necessary to clean the tip surfaces of the probe groups 102a, 102b, 103a, and 103b as shown in FIG. This cleaning process is mainly performed using a polishing wafer or a cleaning unit 115 for cleaning. Then, the tip surfaces of the probe groups 102a, 102b, 103a, and 103b are pressed against the surface of the polishing wafer or the cleaning unit 115, and in this state, the polishing wafer or the cleaning unit 115 is operated in the vertical direction to polish, and the adhered substance is removed. Remove.
JP 2004-304132 A

  However, in the above-described conventional probe card, when the cleaning process is performed by the polished wafer or the cleaning unit, the tips of the probe groups 102a and 102b on the first measured IC chip 105 side are the second measured IC chip 106. As shown in FIG. 6, there is a problem in that the heights of the tips in the vertical direction with respect to the polishing wafer or the cleaning unit 115 are uneven as compared with the tips of the probe groups 103a and 103b on the side. . Hereinafter, this is referred to as uneven wear.

  The inventor considers the occurrence mechanism of the uneven wear as follows. In other words, the reaction of the load applied to each probe during polishing causes deflection in the probe fixing region 104 that fixes each probe. In the conventional probe card, since the configuration of the probe group is different between the first measured IC chip 105 side and the second measured IC chip 106 side, there is a difference in the reaction force. In other words, the probe fixing region 104b in which many relatively long probes are arranged has a higher density of probes, and thus the reaction force is larger than that of the probe fixing region 104a. Then, the probe fixing region 104b is greatly deflected and lifted upward as a result. Accordingly, the positions of the probe groups 102a and 102b disposed in the probe fixing region 104a having a weak reaction force are relatively lowered, and the probe groups 102a and 102b are unevenly polished to cause uneven wear.

  This uneven wear causes a contact failure between the probe and the input / output terminal in the subsequent probe test, which deteriorates the accuracy of the test and the quality of the evaluation. Moreover, since the use period of a probe becomes short, it leads also to a running cost increasing.

  Therefore, the present invention provides a probe card and a semiconductor device measurement method capable of solving the problem of uneven wear, performing an accurate probe test after the cleaning process, and maintaining the period of use for a long time. is there.

  The present invention has been made in view of the above problems, and its main features are as follows. That is, the probe card according to the present invention is a probe card for transmitting and receiving signals to face two adjacent IC chips to be measured arranged in the same direction, and fixed to the probe card formed on the probe card. A first probe group extending from the first area of the probe fixing area and contacting a first terminal group arranged in parallel along one side of the first IC chip to be measured; A second probe group extending from the first region and in contact with a second terminal group arranged in parallel along the other side opposite to one side of the first IC chip to be measured; A third probe group extending from the second region of the probe fixing region opposite to the first region and contacting a third terminal group arranged side by side along one side of the second IC chip to be measured; , Extending from the second region, and the second region A fourth probe group in contact with a fourth terminal group arranged side by side along the other side opposite to one side of the measurement IC chip, and the first region is arranged in the center direction of the probe card. The first probe group extends from the first protrusion, and the second region has a second protrusion in the center direction of the probe card. The fourth probe group extends from the second projecting portion.

  In addition, the probe card according to the present invention is a probe card for transmitting and receiving signals to face two adjacent IC chips to be measured arranged in the same direction, and fixed to the probe card formed on the probe card. An area, a probe group extending from the first area of the probe fixing area, and a probe group extending from the second area of the probe fixing area facing the first area. The probe is characterized by comprising probes of substantially the same length.

  And the measuring method of the semiconductor device of this invention measures the electrical property of a to-be-measured IC chip using the said probe card.

  According to the present invention, since the balance of reaction force generated in each probe fixing region by contact between the probe and the polishing wafer or the cleaning unit is improved, the position of any probe is relatively lowered during the cleaning process. In other words, uneven wear of the probe is prevented. As a result, the accuracy of the probe test and the quality of evaluation can be improved, and the usage period of the probe card can be kept long.

  Next, a method for measuring a probe card and a semiconductor device according to the best mode for carrying out the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic plan view of a probe card according to an embodiment of the present invention as viewed from above, and FIG. 2 is a partially enlarged sectional view thereof. The probe card has a quadrangular opening 2 formed at substantially the center of the probe card substrate 1. A probe fixing region 5 made of epoxy resin or the like is disposed along the opening 2 around the opening 2.

  In addition, probe groups 3 and 4 for making contact with corresponding input / output terminals (bonding pads, bump electrodes, etc.) of two IC chips to be measured arranged in the same direction are directed toward the center of the opening 2. Thus, they are arranged so as to protrude obliquely downward at a predetermined approach angle. The probe is made of a material such as tungsten or nickel alloy.

  Although not shown, one end of each of the probe groups 3 and 4 is connected to a wiring on the probe card substrate 1 and can be electrically connected to an LSI tester (test apparatus) via the wiring. . Further, the tip of each probe is bent further downward so that the approach angle becomes large.

  The probe group 3 is fixed to one side of the opening 2, that is, the probe fixing region 5 a on the first measured IC chip side, and the probe group 4 is fixed to the other side of the opening 2, that is, the first side. 2 is fixed to the probe fixing region 5b on the IC chip side to be measured.

  Further, depending on the number of necessary probes and the positions of the input / output terminals, the contact points between the probes and the probe fixing region (hereinafter referred to as the base end portion) are hierarchically formed in the vertical direction with respect to the probe card substrate 1. It is fixed to. In this embodiment, as shown in FIG. 2 for convenience, the probe group 3 is a two-layered probe group 3a (upper layer) and probe group 3b (lower layer), and the probe group 4 is a probe 4b (upper layer) and a probe group 4a ( It is assumed that the lower layer has a two-layer structure.

  Of the probe group 3, the upper layer probe group 3a corresponds to all the terminals of the input terminal group 9 arranged along one side of the first IC chip 7 to be measured, and the lower layer probe group 3b. Corresponds to all the terminals of the output terminal group 10 arranged in parallel along the other side. Similarly, in the probe group 4, the upper probe group 4b corresponds to all the terminals of the output terminal group 12 arranged in parallel along one side of the second IC chip to be measured, and the probe group 4a This corresponds to all the terminals of the input terminal group 11 arranged side by side along the other side.

  Further, since the probe group 3a corresponds to the input terminal group 9 disposed at a position farther than the output terminal group 10, the length from the base end portion to the bent portion (hereinafter referred to as an arm length). It is formed slightly longer than the probe group 3b.

  The shape of the spacer is changed by arranging the spacer region 20 in the probe fixing region 5a and the spacer region 6 in the probe fixing region 5b. That is, a spacer region 20 (projecting portion) made of an epoxy resin or the like is formed at the base end portion of the probe group 3a that is an upper layer of the probe group 3, and a part of the probe fixing region 5a is the center of the opening 2. Protrudes in the direction. In addition, a spacer region 6 (protruding portion) is formed at the base end portion of the probe group 4 b that is an upper layer of the probe group 4, and a part of the probe fixing region 5 b protrudes toward the center of the opening 2.

  An example of a method for forming the spacer regions 6 and 20 (projections) will be described with reference to FIG. First, as shown in FIG. 3A, the probe groups 3a and 4b are arranged on dedicated jigs 25 and 25 and temporarily fixed. Next, as shown in FIG. 3B, first epoxy resins 26 and 26 (later spacer regions 6 and 20) are formed and fixed so as to cover a part of the probes of the probe groups 3a and 4b. To do. Next, as shown in FIG. 3C, the probe groups 3b and 4a are similarly placed on the dedicated jigs 27 and 27 and temporarily fixed. Next, as shown in FIG. 3D, second epoxy resins 28, 28 are formed and fixed so as to cover a part of each probe of the probe groups 3a, 3b, 4a, 4b. At this time, the second epoxy resins 28 and 28 are formed so that the first epoxy resins 26 and 26 and the second epoxy resins 28 and 28 are continuous. Through the above-described steps, the probe groups 3a and 3b are extended, and the probe fixing region 5a in which the probe group 3a is extended from the spacer region 20 (projecting portion) is formed. At the same time, a probe fixing region 5b is formed in which the probe groups 4a and 4b are extended and the probe group 4b is extended from the spacer region 6 (protrusion).

  Then, as shown in FIG. 2, by this spacer region 20, the length from the proximal end portion of the facing probe group 3a to the bent portion (hereinafter referred to as the arm length 21) and the arm length 22 of the probe group 4a facing the same. The difference in length is reduced, and the length is almost the same. For example, if the length of the arm length 21 is 2041 μm, the length of the arm length 22 is 2046 μm. Similarly, the spacer region 6 allows the arm length 17 of the probe group 3b facing each other and the arm length 16 of the probe group 4b to be substantially the same length. For example, if the length of the arm length 16 is 2154 μm, the length of the arm length 17 is 2133 μm. In this case, it is preferable that all the probes facing each other have the same arm length.

  Furthermore, it is preferable that the arm lengths of the probes of all the probe groups 3a, 3b, 4a, 4b are the same.

  As described above, the feature of this embodiment is that the spacer region 20 is formed at the proximal end portion of the probe group 3a of the probe fixing region 5a, and the spacer region 6 is formed at the proximal end portion of the probe group 4b of the probe fixing region 5b. Thus, the balance of the reaction generated in the probe fixing regions 5a and 5b during the cleaning process is improved as compared with the conventional structure. This is because the force applied to each probe is dispersed as the difference in arm length is reduced for each probe group corresponding to the same type of input / output terminal.

  Further, the difference in the arm lengths of the probes in the probe group 3a and the probe group 4a facing each other corresponding to the same type of input / output terminals, and in the probe group 3b and the probe group 4b is reduced, and as much as possible. It is the characteristic that it comprised so. As a result, the balance of the reaction generated in the probe fixing regions 5a and 5b during the cleaning process becomes more uniform.

  It is desirable that the length from the bent portion to the tip of the probe group 3a and the probe group 4b (hereinafter referred to as the tip length) and the tip length of the probe group 4a and the probe group 3b are also set to the same length.

  As described above, according to the present embodiment, one of the probe fixing regions 5a and 5b is not biased and deflected during the cleaning process, and the relative lowering of the position of either probe is reduced. Abrasion can be effectively prevented. Further, by measuring the operating characteristics of the semiconductor device using such a probe card, the accuracy of measurement and the quality of evaluation can be improved and the period of use can be maintained for a long time.

  As described above, it is more preferable that the arm lengths of the probes facing each other are equal, but the length of each probe is changed in design according to the arrangement of the input / output terminals of the IC chip to be measured. Even if the lengths are not completely the same, uneven wear can be effectively prevented if the difference is a slight difference from the overall length of the probe. For example, when the length of one of the facing probes is L1 and the length of the other probe is L2 (L1 ≧ L2), there is a slight difference of about 0 ≦ (L1−L2) /L1≦0.1. Adjust the length of each probe so that it is. In addition, the same applies to the individual probes constituting each probe group, and even if not exactly the same length, if the difference is a slight difference, the length of each probe is substantially the same length, Uneven wear can be prevented.

  Further, in the above description, the probe is fixed to each of the opposing sides of the probe fixing region, and the probes are arranged so as to protrude alternately. However, depending on the type of IC chip to be measured (arrangement of input / output terminals), etc. Accordingly, the arrangement position, number, and shape of the probes are changed as appropriate.

It is a top view explaining the probe card concerning the embodiment of the present invention. It is sectional drawing explaining the probe card which concerns on embodiment of this invention. It is sectional drawing explaining the probe card which concerns on embodiment of this invention. It is a top view explaining the probe card which concerns on a prior art example. It is sectional drawing explaining the probe card which concerns on a prior art example. It is sectional drawing explaining the probe card which concerns on a prior art example.

Explanation of symbols

1 Probe card board 2 Opening
3, 3a, 3b Probe group (first IC chip to be measured)
4, 4a, 4b Probe group (second measured IC chip side)
5, 5a, 5b Probe fixing area 6 Spacer area 7 First IC chip to be measured 8 Second IC chip to be measured 9 Input terminal group 10 Output terminal group 11 Input terminal group 12 Output terminal group 16 Arm length 17 Arm length 20 Spacer area 21 Arm length 22 Arm length 25 Jig 26 First epoxy resin 27 Jig 28 Second epoxy resin 100 Probe card board 101 Opening
102, 102a, 102b Probe group (first IC chip to be measured)
103, 103a, 103b Probe group (second measured IC chip side)
104, 104a, 104b Probe fixing region 105 First IC chip to be measured 106 Second IC chip to be measured 107 Input terminal group 108 Output terminal group 109 Input terminal group 110 Output terminal group 115 Polishing wafer or cleaning unit

Claims (6)

A probe card for transmitting and receiving signals to face two adjacent IC chips to be measured arranged in the same direction,
A probe fixing region formed on the probe card;
A first probe group extending from a first area of the probe fixing area and contacting a first terminal group arranged in parallel along one side of the first IC chip to be measured;
A second probe group extending from the first region and contacting a second terminal group arranged in parallel along the other side facing the one side of the first IC chip to be measured;
A third terminal extending from the second region of the probe fixing region facing the first region and contacting a third terminal group arranged in parallel along one side of the second IC chip to be measured. A probe group and a fourth probe group extending from the second region and in contact with a fourth terminal group arranged along the other side facing the one side of the second IC chip to be measured The first region has a first protrusion in the center direction of the probe card, the first probe group extends from the first protrusion, and the second The probe card is characterized in that the region has a second protrusion in the center direction of the probe card, and the fourth probe group extends from the second protrusion. 2. The probe card according to claim 1, wherein a length of the probe of the fourth probe group is equal to a length of the probe of the second probe group. The probe card according to claim 1, wherein the probe length of the first probe group is equal to the probe length of the third probe group. The first terminal group is an input terminal group of the first IC chip to be measured, the second terminal group is an output terminal group of the first IC chip to be measured, and the third terminal group. 2. The terminal group is an input terminal group of the second IC chip to be measured, and the fourth terminal group is an output terminal group of the second IC chip to be measured. The probe card according to claim 3. A probe card for transmitting and receiving signals to face two adjacent IC chips to be measured arranged in the same direction,
A probe fixing region formed on the probe card;
A group of probes extending from the first region of the probe fixing region;
And a probe group extending from a second region of the probe fixing region facing the first region, wherein the probes facing each other comprise probes of substantially the same length. A semiconductor device measurement method for measuring an electrical characteristic of the IC chip to be measured using the probe card according to claim 1.