JP2007088431A - Organic semiconductor material, and organic semiconductor element and field effect transistor using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic semiconductor material having a high carrier mobility, and to provide an organic semiconductor element and field effect transistor using the same. <P>SOLUTION: In this organic semiconductor material, groups X1, X2 and X3 having an aromatic ring respectively are bonded to a branch connection Y having at least three bonding links. The organic semiconductor material is charactorized in that the branch connection Y has preferably Structural Formula (1): wherein R<SB>1</SB>, R<SB>2</SB>and R<SB>3</SB>are any one of a hydrogen atom, an alkyl group which may be substituted, an alkoxy group which may be substituted and an aryl group which may be substituted, and these may be the same or different from each other. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an organic semiconductor material, an organic semiconductor element using the same, and a field effect transistor.

  In recent years, along with research on organic semiconductors, studies have been made on using organic semiconductor materials for semiconductor elements such as transistors in which Si materials are conventionally used. An organic semiconductor material can be deposited at a relatively low temperature, and when formed into a solution, a semiconductor layer can be formed by a printing method such as an inkjet method. Therefore, it is possible to manufacture a semiconductor element by a simple process as compared with the case of using a Si material.

  In Patent Document 1, a branched conjugated polymer in which the bond between the main chain and the side chain is conjugated is proposed as such a semiconductor material.

However, conventional organic semiconductor materials do not have sufficient carrier mobility, and organic semiconductor materials having higher carrier mobility have been demanded.
Japanese Patent Laid-Open No. 2004-6682

  The objective of this invention is providing the organic-semiconductor material with high carrier mobility, the organic-semiconductor element using the same, and a field effect transistor.

  The organic semiconductor material of the present invention is characterized in that the groups X1, X2, and X3 having an aromatic ring are bonded to a branch portion Y having at least three bonding portions.

  ADVANTAGE OF THE INVENTION According to this invention, it can be set as an organic-semiconductor material with high carrier mobility, and when it uses for an organic transistor element, the outstanding transistor characteristic can be acquired.

  The organic semiconductor material of the present invention is preferably characterized in that the branch portion Y has the following structure.

Wherein R ₁ , R ₂ and R ₃ are hydrogen, an optionally substituted alkyl group, an optionally substituted alkoxy group, or an optionally substituted aryl group, and may be the same or different from each other. Good.)
In the alkyl group that may be substituted, the alkoxy group that may be substituted, and the aryl group that may be substituted, the substituent may be a substituent containing an element such as oxygen, nitrogen, silicon, phosphorus, or sulfur. Good. Examples of the aryl group include a phenyl group and a naphthyl group.

  The organic semiconductor material of the present invention is preferably characterized in that at least one of the groups X1, X2 and X3 having an aromatic ring has a structure shown below.

Wherein R is hydrogen, an optionally substituted alkyl group, an optionally substituted alkoxy group, or an optionally substituted aryl group, and may be the same or different from each other. N is 1 to 20 (It is an integer up to.)
The organic semiconductor material of the present invention may have a chemical structure that is symmetric about the branch portion Y or may be asymmetric.

  Moreover, the organic semiconductor material of the present invention may have a chemical structure including two or more branch portions Y.

  Examples of the organic semiconductor material according to the present invention include those having the following structure.

Wherein Y is a branched part of the molecular chain, and R ₄ , R ₅ and R ₆ are hydrogen, an optionally substituted alkyl group, an optionally substituted alkoxy group, or an optionally substituted aryl group And may be the same or different from each other, n is an integer from 1 to 20.)
Moreover, what has the structure shown below as an organic-semiconductor material according to this invention is mentioned.

Wherein R _{1 to} R ₆ are hydrogen, an optionally substituted alkyl group, an optionally substituted alkoxy group, or an optionally substituted aryl group, and may be the same or different from each other. Is an integer from 1 to 20.)
Examples of the organic semiconductor material according to the present invention include those having a structure represented by the following general formula.

Wherein R _{1 to} R ₉ are hydrogen, an optionally substituted alkyl group, an optionally substituted alkoxy group, or an optionally substituted aryl group, and may be the same or different from each other. And n is an integer from 1 to 20.)
An organic semiconductor material having the following structure is exemplified as the one having the structure of the general formula.

  Examples of the organic semiconductor material according to the present invention include those having a structure represented by the following general formula.

(In the formula, F is a phenylene derivative, a fluorene derivative, an amine derivative, a phenylamine derivative, or a thiophene derivative, and R _{1 to} R ₉ are hydrogen, an alkyl group that may be substituted, or an alkoxy group that may be substituted. Or an aryl group which may be substituted, and may be the same or different from each other, m and n are integers from 1 to 20.)
F in the general formula may be a unit having a conjugated bond as described above, but may be a non-conjugated unit such as cyclohexane or ether.

  The following organic semiconductor materials are listed as those having the structure of the above general formula.

  Moreover, the organic semiconductor polymer material as shown below is mentioned.

  The molecular weight (Mw) in the organic semiconductor polymer material is preferably about 1,800 to 5,000,000.

  The branch part Y in the organic semiconductor material of the present invention may have the following structure.

  (In the formula, R represents hydrogen, an optionally substituted alkyl group, an optionally substituted alkoxy group, or an optionally substituted aryl group.)

  In the organic semiconductor material of the present invention, the groups X1, X2, and X3 having an aromatic ring may have a structure shown below.

Note that in the structural formulas shown below, R _{1 to} R ₃ are hydrogen, an alkyl group that may be substituted, an alkoxy group that may be substituted, or an aryl group that may be substituted, and may be the same or different from each other. May be. N is an integer from 1 to 20.

  The organic semiconductor element of the present invention is characterized by using the organic semiconductor material of the present invention.

  The organic transistor of the present invention is characterized by using the organic semiconductor material of the present invention.

  The field effect transistor of the present invention includes a charge transporting material layer and a gate electrode in direct contact with the charge transporting material layer, and applying an electric field between the gate electrode and the charge transporting material layer. A field effect transistor for controlling the current in the charge transporting material layer, wherein the charge transporting material layer is formed from the organic semiconductor material of the present invention.

  The organic semiconductor material of the present invention has high carrier mobility, and when used for an organic semiconductor element, good semiconductor characteristics can be obtained.

  Hereinafter, the present invention will be described with reference to specific examples, but the present invention is not limited to the following examples.

(Synthesis Example 1)
Tris [4,-(2,2′-bithiophen-5-yl) phenyl] amine (TPA-3T2) [Compound 1]

  A dry gastight reaction vessel equipped with a mechanical stirrer and connectable to a nitrogen line and a vacuum line was charged with tris (4-bromophenyl) amine (241 mg, 0.5 mmol), 5- (4,4,5,5- Tetramethyl-1,3,2-dioxaborolan-2-yl) -2,2'-bithiophene (460 mg, 1.575 mmol), Suzuki coupling catalyst, 5 ml of toluene, 8 ml of tetraethylammonium hydroxide (20 wt%) added And reacted. The reaction vessel was evacuated and then filled with nitrogen three times and heated to 95 ° C. The reaction was carried out at 95 ° C. under a nitrogen atmosphere for about 8 hours.

  After cooling the product, it was dropped into 200 ml of methanol to precipitate the product. Next, it was washed with methanol three times. After vacuum drying, the product was dissolved in 10 ml of chloroform and purified by column chromatography packed with silica gel. After removing the solvent with a rotary evaporator and concentrating to an appropriate amount, it was dropped into 200 ml of methanol to precipitate the product. The precipitate was washed 3 times with methanol and dried in vacuo. A yellow powder was obtained as the final product. The yield was 12%.

(Synthesis Example 2)
Bis [bis [(5-bithiophen-2-yl) -1,4-phenylenediyl] amino-1,4-phenylenediyl] -9,9-dioctylfluorene-2,7-diyl (F8-TPA-4T2) [Compound 2]

  A dry gas-tight reaction vessel equipped with a mechanical stirrer and connectable to a nitrogen line and a vacuum line was charged with tris (4-bromophenyl) amine (482 mg, 1 mmol), 9,9-dioctyl-2,7-dibromofluorene ( 321 mg, 0.5 mmol), a Suzuki coupling catalyst, 5 ml of toluene, and 8 ml of tetraethylammonium hydroxide (20 wt%) were added and reacted. The reaction vessel was evacuated and then filled with nitrogen three times and heated to 95 ° C. The reaction was carried out at 95 ° C. under a nitrogen atmosphere for about 4.5 hours. Next, 5- (4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl) -2,2'-bithiophene (614 mg, 2.1 mmol) was added followed by 95 ° C. For 5 hours under a nitrogen atmosphere.

  After cooling the product, it was dropped into 200 ml of methanol to precipitate the product. Next, it was washed with methanol three times. After vacuum drying, the product was dissolved in 10 ml of chloroform and purified by column chromatography packed with silica gel. After removing the solvent with a rotary evaporator and concentrating to an appropriate amount, it was dropped into 200 ml of methanol to precipitate the product. The precipitate was washed 3 times with methanol and dried in vacuo. A green powder was obtained as the final product. The yield was 63%.

(Synthesis Example 3)
Bis [bis [(5-bithiophen-2-yl) -1,4-phenylenediyl] amino- (1,1′-biphenyl)]-N, N′-bis [4- (1,1-dimethylethyl) Phenyl] -N, N′-bis (1,4-phenylenediyl)-(1,1′-biphenyl) -4,4′-diamine (TPD-TPA-4T2) [Compound 3]

  A dry gastight reaction vessel equipped with a mechanical stirrer and connectable to a nitrogen line and a vacuum line was charged with N, N′-bis [4- (1,1-dimethylethyl) phenyl] -N, N′-bis ( 1,4-phenylenediyl)-(1,1′-biphenyl) -4,4′-diamine-4,4′-bis-4,4,5,5-tetramethyl-1,3,2-dioxaborolane ( 426 mg, 0.5 mmol), tris (4-bromophenyl) amine (482 mg, 1 mmol), Suzuki coupling catalyst, toluene 5 ml, tetraethylammonium hydroxide (20 wt%) 8 ml were added and reacted. The reaction vessel was evacuated and then filled with nitrogen three times and heated to 95 ° C. The reaction was carried out at 95 ° C. under a nitrogen atmosphere for about 4.5 hours. Next, 5- (4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl) -2,2'-bithiophene (614 mg, 2.1 mmol) was added followed by 95 ° C. The reaction was further continued for 5 hours under a nitrogen atmosphere.

  After cooling the product, it was dropped into 200 ml of methanol to precipitate the product. Next, it was washed with methanol three times. After vacuum drying, the product was dissolved in 10 ml of chloroform and purified by column chromatography packed with silica gel. After removing the solvent with a rotary evaporator and concentrating to an appropriate amount, it was dropped into 200 ml of methanol to precipitate the product. The precipitate was washed 3 times with methanol and dried in vacuo. A green powder was obtained as the final product. The yield was 82%.

(Synthesis Example 4)
Poly [(9,9-dioctylfluorene-2,7-diyl) -co- (bithiophene-2,5'-diyl) -co- (4 ", 4""-tertiarybutyl-tetraphenyldiamine-4 , 4'-diyl) -co-N, N'-bis [4- (1,1-dimethylethyl) phenyl] -N, N'-bis (1,4-phenylenediyl)-(1,1'- Biphenyl) -4,4'-diamine-co- (4 "-trithiophene-phenylene-1,4-diyl) -di (1,4-phenylenediyl) amine] (PF8-T2 (40%)-TPD ( 25%)-TPA (10%) [Compound 4]

  A dry gastight reaction vessel equipped with a mechanical stirrer and connectable to a nitrogen line and a vacuum line was charged with N, N′-bis [4- (1,1-dimethylethyl) phenyl] -N, N′-bis ( 1,4-phenylenediyl)-(1,1′-biphenyl) -4,4′-diamine-4,4′-bis (4,4,5,5-tetramethyl-1,3,2-dioxaborolane ( 213 mg, 0.25 mmol), 9,9-dioctylfluorene-2,7-bis (4,4,5,5-tetramethyl-1,3,2-dioxaborolane (160.5 mg, 0.25 mmol), 2, 5'-dibromo-bithiophene (130 mg, 0.4 mmol), tris (4-bromophenyl) amine (48.2 mg, 0.1 mmol), 5- (4,4,5,5-tetramethyl-1,3, 2-Dioxa Loran-2-yl) -2,2 ′, 2 ″ -terthiophene (37.5 mg, 0.2 mmol), Suzuki coupling catalyst, 5 ml of toluene, 8 ml of tetraethylammonium hydroxide (20 wt%) are added and reacted. After the reaction vessel was evacuated, it was filled with nitrogen three times and heated to 95 ° C. The reaction was carried out for about 3 hours under a nitrogen atmosphere at 95 ° C. Next, 61 mg of phenylboronic acid was added, and then 95 The mixture was further reacted at 0 ° C. under a nitrogen atmosphere for 2 hours, after which about 0.12 ml of bromobenzene was added, and further reacted at 95 ° C. under a nitrogen atmosphere for 2 hours.

  After cooling the product, it was dropped into 300 ml of methanol to precipitate the product. Next, it was washed with methanol three times. After vacuum drying, the product was dissolved in 10 ml of toluene and purified by column chromatography packed with silica gel. After removing the solvent with a rotary evaporator and concentrating to an appropriate amount, it was dropped into 300 ml of methanol to precipitate the product. The precipitate was washed 3 times with methanol and dried in vacuo. A yellow powder was obtained as the final product. The yield was 58%.

  The molecular weight (Mw) of the obtained product was about 50,000.

(Synthesis Example 5)
Bis [bis [(5,2'-bithiophen-2-yl) -1,4-phenylenediyl] amino-1,4-phenylenediyl] -5,2'-bithiophene-2,5'-diyl (T2- TPA-4T2) [Compound 5]

  A dry gastight reaction vessel equipped with a mechanical stirrer and connectable to a nitrogen line and a vacuum line was charged with 5,5'-di (4,4,5,5-tetramethyl-1,3,2-dioxaborane-2. -Yl) -2,2'-bithiophene (209 mg, 0.5 mmol), tris (4-bromophenyl) amine (482 mg, 1 mmol), Suzuki coupling catalyst, toluene 5 ml, tetraethylammonium hydroxide (20 wt%) 8 ml Was added to react. The reaction vessel was evacuated and then filled with nitrogen three times and heated to 95 ° C. The reaction was carried out under a nitrogen atmosphere for about 4.5 hours. Next, 5- (4,4,5,5-tetramethyl-1,3,2-dioxaborane-2-yl-2,2'-bithiophene (614 mg, 2.1 mmol) was added, followed by nitrogen at 95 ° C. The reaction was further continued for 5 hours under the atmosphere.

  After cooling the product, it was dropped into 200 ml of methanol to precipitate the product. Next, it was washed with methanol three times. After vacuum drying, the product was dissolved in 10 ml of chloroform and purified by column chromatography packed with silica gel. After removing the solvent with an evaporator and concentrating to an appropriate amount, it was dropped into 200 ml of methanol to precipitate the product. The precipitate was washed 3 times with methanol and dried in vacuo. A yellow powder was obtained as the final product. The yield was 48%.

(Synthesis Comparative Example 1)
2,7-di (5,2 ', 5', 2 ", 5", 2 ""-tetrathiophen-2-yl) -9,9-dioctylfluorene (F8-4T) [Compound 6]

  A dry, airtight reaction vessel equipped with a mechanical stirrer and connectable to a nitrogen line and a vacuum line was charged with 9,9-dioctylfluorene-2,7-bis (4,4,5,5-tetramethyl-1,3 , 2-Dioxaborolane (321 mg, 0.5 mmol), 2,5′-dibromo-bithiophene (324 mg, 1.0 mmol), Suzuki coupling catalyst, 5 ml of toluene, 8 ml of tetraethylammonium hydroxide (20 wt%) are added and reacted. After the reaction vessel was evacuated, it was filled with nitrogen three times and heated to 95 ° C. The reaction was conducted at 95 ° C. under a nitrogen atmosphere for about 4.5 hours, then 5- (4, 4, 5,5-Tetramethyl-1,3,2-dioxaborolan-2-yl) -2,2′-bithiophene (307 mg, 1.05 mmol) was added followed by nitrogen at 95 ° C. It was further reacted for 5 hours under 囲気.

  After cooling the product, it was dropped into 200 ml of methanol to precipitate the product. Next, it was washed with methanol three times. After vacuum drying, the product was dissolved in 10 ml of chloroform and purified by column chromatography packed with silica gel. After removing the solvent with a rotary evaporator and concentrating to an appropriate amount, it was dropped into 200 ml of methanol to precipitate the product. The precipitate was washed 3 times with methanol and dried in vacuo. A yellow powder was obtained as the final product. The yield was 45%.

[Production of Organic Transistor: Examples 1 to 5 and Comparative Example 1]
A MOS type field effect transistor was produced using the organic semiconductor material produced above.

  FIG. 1 is a schematic cross-sectional view showing the structure of a fabricated MOS field effect transistor. As shown in FIG. 1, an insulating film 2 is provided on a silicon wafer 1, an organic semiconductor film 3 is formed on the insulating film 2, and a source electrode 4 and a drain are separated on the organic semiconductor film 3 by a predetermined distance. An electrode 5 is formed.

  FIG. 2 is a plan view showing the source electrode 4 and the drain electrode 5. As shown in FIG. 2, the distance L between the source electrode 4 and the drain electrode 5 is the channel length, and the width of each of the source electrode 4 and the drain electrode 5 is the channel width W.

  In the organic transistor shown in FIG. 1, an n-type doped silicon wafer 1 is used as a gate electrode. An insulating film 2 made of silicon dioxide having a thickness of 100 nm is formed on the silicon wafer 1. The silicon wafer 1 was used after ultrasonic cleaning in the order of 2-propanol, acetone, ion-exchanged water, and methanol and then cleaning the surface by ultraviolet / ozone treatment. An organic semiconductor film 3 is formed on the insulating film 2.

  The organic semiconductor film 3 was formed as follows. The organic semiconductor material was made into a solution with an organic solvent, this solution was spin-coated on the surface of the insulating film 2, and baked at 80 ° C. under reduced pressure in a vacuum oven for 1 hour to remove the organic solvent. Thereby, the organic semiconductor film 3 having a film thickness of 100 nm to 150 nm was formed.

  A source electrode 4 and a drain electrode 5 made of gold were formed on the organic semiconductor film 3 by vacuum deposition.

  The transistor characteristics between the three terminals of the gate electrode 1, the source electrode 4 and the drain electrode 5 made of the silicon wafer 1 were evaluated at room temperature (about 27 ° C.) using a 4156C type high precision semiconductor parameter analyzer manufactured by Agilent. .

Example 1
The organic semiconductor film 3 was formed using the compound 1, and the characteristics of the obtained organic transistor were evaluated as described above. The channel length L is 0.1 mm, and the channel width W is 1 mm.

FIG. 3 is a diagram illustrating the VI characteristic. The on / off ratio was 8, the mobility was 2.35 × 10 ⁻⁵ cm ² / Vs, and good transistor characteristics were obtained.

(Example 2)
The organic semiconductor film 3 was formed using the compound 2, and the characteristics of the obtained organic transistor were evaluated as described above. The channel length L is 0.07 mm, and the channel width W is 1 mm.

FIG. 4 is a diagram illustrating the VI characteristic. The on / off ratio was 71, the mobility was 1.61 × 10 ⁻⁵ cm ² / Vs, and good transistor characteristics were obtained.

(Example 3)
The organic semiconductor film 3 was formed using the compound 3, and the characteristics of the obtained organic transistor were evaluated as described above. The channel length L is 0.1 mm, and the channel width W is 1 mm.

FIG. 5 is a diagram illustrating the VI characteristic. The on / off ratio was 56, the mobility was 9.2 × 10 ⁻⁵ cm ² / Vs, and good transistor characteristics were obtained.

Example 4
The organic semiconductor film 3 was formed using the compound 4, and the characteristics of the obtained organic transistor were evaluated as described above. The channel length L is 0.1 mm, and the channel width W is 1 mm.

FIG. 6 is a diagram illustrating the VI characteristic. On / off ratio was 5, the mobility is ^{5.2 × 10 -5 cm 2 / Vs} , good transistor characteristics were obtained.

(Example 5)
The organic semiconductor film 3 was formed using the compound 5, and the characteristics of the obtained organic transistor were evaluated as described above. The channel length L is 0.05 mm, and the channel width W is 1 mm.

The on / off ratio was 8, the mobility was 4.6 × 10 ⁻⁵ cm ² / Vs, and good transistor characteristics were obtained.

(Comparative Example 1)
The organic semiconductor film 3 was formed using the compound 6, and the organic transistor was produced. However, even when the gate voltage was changed, the drain current was not modulated.

  As is clear from the above, good transistor characteristics are obtained in the organic transistor in which the organic semiconductor film is formed using the organic semiconductor material according to the present invention. Therefore, the organic semiconductor material according to the present invention has a high carrier mobility and gives good transistor characteristics when used in an organic transistor.

The typical sectional view showing the organic transistor produced in the example according to the present invention. The top view of the source electrode and drain electrode in the organic transistor shown in FIG. FIG. 5 shows VI characteristics of an organic transistor manufactured in Example 1. FIG. 6 shows VI characteristics of an organic transistor manufactured in Example 2. FIG. 10 shows VI characteristics of an organic transistor fabricated in Example 3. FIG. 10 is a graph showing VI characteristics of an organic transistor manufactured in Example 4;

Explanation of symbols

1 ... Silicon wafer (gate electrode)
2 ... Insulating film 3 ... Organic semiconductor film 4 ... Source electrode 5 ... Drain electrode

Claims (17)

  An organic semiconductor material, wherein groups X1, X2, and X3 each having an aromatic ring are bonded to a branched portion Y having at least three bonding portions. The organic semiconductor material according to claim 1, wherein the branch portion Y has a structure shown below.

Wherein R ₁ , R ₂ and R ₃ are hydrogen, an optionally substituted alkyl group, an optionally substituted alkoxy group, or an optionally substituted aryl group, and may be the same or different from each other. Good.) 3. The organic semiconductor material according to claim 1, wherein at least one of the groups X1, X2, and X3 having an aromatic ring has a structure shown below.

Wherein R is hydrogen, an optionally substituted alkyl group, an optionally substituted alkoxy group, or an optionally substituted aryl group, and may be the same or different from each other. N is 1 to 20 (It is an integer up to.)   The organic semiconductor material according to any one of claims 1 to 3, wherein the chemical structure is symmetrical about the branch portion Y.   The organic semiconductor material according to any one of claims 1 to 3, wherein the chemical structure is asymmetric about the branch portion Y.   The organic semiconductor material according to any one of claims 1 to 5, wherein the chemical structure includes two or more branch portions Y. It has the structure shown below, The organic-semiconductor material of any one of Claims 1-6 characterized by the above-mentioned.

Wherein Y is a branched part of the molecular chain, and R ₄ , R ₅ and R ₆ are hydrogen, an optionally substituted alkyl group, an optionally substituted alkoxy group, or an optionally substituted aryl group And may be the same or different from each other, n is an integer from 1 to 20.) It has the structure shown below, The organic-semiconductor material of any one of Claims 1-6 characterized by the above-mentioned.

Wherein R _{1 to} R ₆ are hydrogen, an optionally substituted alkyl group, an optionally substituted alkoxy group, or an optionally substituted aryl group, and may be the same or different from each other. Is an integer from 1 to 20.) It has the structure shown below, The organic-semiconductor material of Claim 8 characterized by the above-mentioned.

(Wherein R _{1 to} R ₉ are hydrogen, an optionally substituted alkyl group, an optionally substituted alkoxy group, or an optionally substituted aryl group, and may be the same or different from each other. And n is an integer from 1 to 20.) It has the structure shown below, The organic-semiconductor material of Claim 9 characterized by the above-mentioned.

It has the structure shown below, The organic-semiconductor material of Claim 8 characterized by the above-mentioned.

(In the formula, F is a phenylene derivative, a fluorene derivative, an amine derivative, a phenylamine derivative, or a thiophene derivative, and R _{1 to} R ₉ are hydrogen, an alkyl group that may be substituted, or an alkoxy group that may be substituted. Or an aryl group which may be substituted, and may be the same or different from each other, m and n are integers from 1 to 20.) It has the structure shown below, The organic-semiconductor material of Claim 11 characterized by the above-mentioned.

It has the structure shown below, The organic-semiconductor material of Claim 11 characterized by the above-mentioned.

It has the structure shown below, The organic-semiconductor material of Claim 8 characterized by the above-mentioned.

  The organic-semiconductor element characterized by using the organic-semiconductor material of any one of Claims 1-14.   An organic transistor using the organic semiconductor material according to claim 1. A charge transporting material layer; and a gate electrode directly or indirectly in contact with the charge transporting material layer, and applying an electric field between the gate electrode and the charge transporting material layer, thereby In a field effect transistor that controls the current in the layer,
A field effect transistor, wherein the charge transporting material layer is formed of the organic semiconductor material according to claim 1.

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