JP2007088424A5

JP2007088424A5 -

Info

Publication number: JP2007088424A5
Application number: JP2006185705A
Authority: JP
Filing date: 2006-07-05
Publication date: 2008-09-04

Description

本発明に係る化学機械研磨用水系分散体は、水、重量平均分子量が２０万を超えるポリビニルピロリドン、酸化剤、水不溶性金属化合物を形成する第一の金属化合物形成剤と水溶性金属化合物を形成する第二の金属化合物形成剤とを含む保護膜形成剤および砥粒を含有し、前記ポリビニルピロリドンの含有率が、０．００１重量％以上０．５重量％以下であり、前記第一の金属化合物形成剤が、キナルジン酸および／またはキノリン酸を含むことを特徴とする。 The aqueous dispersion for chemical mechanical polishing according to the present invention forms water, a polyvinylpyrrolidone having a weight average molecular weight exceeding 200,000, an oxidizing agent, a first metal compound forming agent that forms a water-insoluble metal compound, and a water-soluble metal compound. A protective film forming agent containing a second metal compound forming agent and abrasive grains , wherein the polyvinyl pyrrolidone content is 0.001 wt% or more and 0.5 wt% or less, and the first metal The compound forming agent includes quinaldic acid and / or quinolinic acid .

前記水不溶性金属化合物は水不溶性錯体であることが好ましく、前記水溶性金属化合物は水溶性錯体であることが好ましい。
上記化学機械研磨用水系分散体の粘度は、２ｍＰａ・ｓ未満であることが好ましい。
前記ポリビニルピロリドンの、フィケンチャー（Ｆｉｋｅｎｔｓｃｈｅｒ）法により求めたＫ値は、５７を超えて１０６以下であることが好ましい。
前記酸化剤は、過硫酸アンモニウムを含むことが好ましい。
前記第二の金属化合物形成剤は、アミノ酸および／または塩基性塩を含むことが好ましい。
本発明に係る化学機械研磨方法は、ターンテーブル上に貼付された研磨布に、金属膜を有する半導体基板を当接させる工程、および前記研磨布上に、上記化学機械研磨用水系分散体を滴下しながら前記金属膜の表面を研磨する工程を具備することを特徴とする。 The water-insoluble metal compound is preferably a water-insoluble complex, and the water-soluble metal compound is preferably a water-soluble complex.
The viscosity of the chemical mechanical polishing aqueous dispersion is preferably less than 2 mPa · s.
It is preferable that K value of the polyvinyl pyrrolidone obtained by the Fikentscher method exceeds 57 and is 106 or less.
The oxidizing agent preferably includes ammonium persulfate.
The second metal compound forming agent preferably contains an amino acid and / or a basic salt.
The chemical mechanical polishing method according to the present invention includes a step of bringing a semiconductor substrate having a metal film into contact with a polishing cloth affixed on a turntable, and dropping the chemical mechanical polishing aqueous dispersion onto the polishing cloth. And a step of polishing the surface of the metal film.

Claims

A protective film comprising water, polyvinylpyrrolidone having a weight average molecular weight exceeding 200,000, an oxidizing agent, a first metal compound forming agent that forms a water-insoluble metal compound, and a second metal compound forming agent that forms a water-soluble metal compound a former and you contain abrasive chemical mechanical polishing aqueous dispersion,
The polyvinyl pyrrolidone content is 0.001 wt% or more and 0.5 wt% or less,
The chemical mechanical polishing aqueous dispersion, wherein the first metal compound forming agent contains quinaldic acid and / or quinolinic acid .

The chemical mechanical polishing aqueous dispersion according to claim 1, wherein the water-insoluble metal compound is a water-insoluble complex.

3. The chemical mechanical polishing aqueous dispersion according to claim 1, wherein the water-soluble metal compound is a water-soluble complex.

The chemical mechanical polishing aqueous dispersion according to any one of claims 1 to 3, wherein the viscosity is less than 2 mPa · s.

5. The chemical mechanical polishing aqueous dispersion according to claim 1, wherein the polyvinyl pyrrolidone has a K value determined by a Fikenscher method of more than 57 and 106 or less.

The chemical mechanical polishing aqueous dispersion according to claim 1, wherein the oxidizing agent contains ammonium persulfate.

The chemical mechanical polishing aqueous dispersion according to any one of claims 1 to 6, wherein the second metal compound forming agent contains an amino acid and / or a basic salt.

A step of bringing a semiconductor substrate having a metal film into contact with a polishing cloth affixed on a turntable, and the chemical mechanical polishing aqueous dispersion according to any one of claims 1 to 7 dropped on the polishing cloth A chemical mechanical polishing method comprising the step of polishing the surface of the metal film.

Forming an insulating film on the semiconductor substrate;
Forming a recess in the insulating film;
Forming a metal film by depositing metal inside the recess and on the insulating film;
A step of removing at least a part of the metal film deposited on the insulating film, and removing the metal from the chemical mechanical polishing aqueous dispersion according to any one of claims 1 to 7. A method of manufacturing a semiconductor device, which is performed by chemical mechanical polishing used.

A kit for preparing the chemical mechanical polishing aqueous dispersion according to any one of claims 1 to 7 , comprising the liquid (I) and the liquid (II).
The liquid (I) is an aqueous dispersion containing water, the polyvinyl pyrrolidone, the protective film forming agent and the abrasive grains,
A kit for preparing an aqueous dispersion for chemical mechanical polishing, wherein the liquid (II) contains water and the oxidizing agent.

A kit for preparing an aqueous dispersion for chemical mechanical polishing according to any one of claims 1 to 7 , comprising liquid (III) and liquid (IV), wherein the liquids are mixed.
The liquid (III) is an aqueous dispersion containing water and the abrasive grains,
The liquid (IV) contains water and the protective film forming agent,
The polyvinyl pyrrolidone is contained in the liquid (III) and / or the liquid (IV),
A chemical mechanical polishing aqueous dispersion preparation kit, wherein the oxidizing agent is contained in the liquid (III) and / or the liquid (IV).

A kit for preparing an aqueous dispersion for chemical mechanical polishing according to any one of claims 1 to 7 , comprising liquid (V), liquid (VI) and liquid (VII). There,
The liquid (V) is an aqueous dispersion containing water and the abrasive grains,
The liquid (VI) contains water and the protective film forming agent,
The liquid (VII) contains water and the oxidizing agent,
The chemical mechanical polishing aqueous dispersion preparation kit, wherein the polyvinyl pyrrolidone is contained in at least one selected from the liquids (V), (VI), and (VII).