JP2007088253A - Light emitting diode device and lighting apparatus - Google Patents

Light emitting diode device and lighting apparatus Download PDF

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JP2007088253A
JP2007088253A JP2005275902A JP2005275902A JP2007088253A JP 2007088253 A JP2007088253 A JP 2007088253A JP 2005275902 A JP2005275902 A JP 2005275902A JP 2005275902 A JP2005275902 A JP 2005275902A JP 2007088253 A JP2007088253 A JP 2007088253A
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substrate
emitting diode
light emitting
resin layer
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Iwatomo Moriyama
厳與 森山
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Toshiba Lighting and Technology Corp
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Toshiba Lighting and Technology Corp
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<P>PROBLEM TO BE SOLVED: To provide a light emitting diode device which can prevent or reduce such deformations as the warps of its substrate and its resin layer and can increase its heat radiating quantity, and to provide a lighting apparatus. <P>SOLUTION: The light emitting diode device has a substrate 2 having a front surface, and having substrates 3 each of which has steps 3e, 3f, and having slits 6 interposed between the substrates, and has a resin layer 12 having a plurality of recesses 11 formed in the front surface of each substrate, and having via each slit engagements 12a2, 12b2 for covering therewith the steps of the rear surface of each substrate, and having spaces 12a3, 12b3 formed between the engagements and the rear surface of each substrate, and further, has each conductor layer 8a provided in each substrate, and moreover, has each light emitting diode chip 9 provided in each recess and connected electrically with each conductor layer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は発光ダイオード装置および照明装置に関する。   The present invention relates to a light emitting diode device and a lighting device.

従来の発光ダイオード装置の一例としては、発光ダイオードチップを配設した樹脂製ケース内に、合成樹脂を充填して発光ダイオードチップをケース内に封止する面実装タイプのものが知られている(例えば特許文献1参照)。   As an example of a conventional light emitting diode device, a surface mount type device in which a synthetic resin is filled in a resin case in which a light emitting diode chip is disposed and a light emitting diode chip is sealed in the case is known ( For example, see Patent Document 1).

また、この種の発光ダイオード装置の中には、発光ダイオードチップを一対の金属板にそれぞれ電気的に接続し、これら複数の発光ダイオードチップと複数対の金属板を、透光性エポキシ樹脂等よりなる封止樹脂等の樹脂層により一体に被覆しているものもある(例えば特許文献2参照)。
特開2002−43625号公報 特開2003−60240号公報
Further, in this type of light emitting diode device, the light emitting diode chip is electrically connected to a pair of metal plates, and the plurality of light emitting diode chips and the plurality of pairs of metal plates are made of a translucent epoxy resin or the like. Some of them are integrally covered with a resin layer such as a sealing resin (see, for example, Patent Document 2).
JP 2002-43625 A JP 2003-60240 A

しかしながら、この特許文献2記載の発光ダイオード装置では、樹脂層の熱膨張率の方が金属板の熱膨張率よりも大きいという熱膨張差があるので、発光ダイオードチップの発熱により樹脂層が金属板に対して凸の円弧状に湾曲する反り等の変形が発生する。このために、樹脂層が金属板から浮き上がり、金属板と樹脂層との間に間隙が形成されるという課題がある。   However, in the light emitting diode device described in Patent Document 2, there is a difference in thermal expansion that the thermal expansion coefficient of the resin layer is larger than that of the metal plate. On the other hand, deformation such as warping that curves in a convex arc shape occurs. For this reason, there exists a subject that a resin layer floats from a metal plate and a gap | interval is formed between a metal plate and a resin layer.

これにより、樹脂層の浮き上がり量の大きい箇所と小さい箇所とでは、金属板と樹脂層との間隙の大きさが相違し、これら間隙内に封止樹脂の一部が侵入するので、発光ダイオードチップを覆う蛍光体入りの封止樹脂の充填量が一定せず、また、封止樹脂の投光面の傾きが相違して投光方向が相違するので、色むらや輝度むらを生じるという課題がある。さらに、発熱する発光ダイオードチップの全体を封止樹脂により被覆しているので、放熱量が少なく、発光ダイオード装置全体が高温に昇温するという課題がある。   As a result, the size of the gap between the metal plate and the resin layer is different between the portion where the lift amount of the resin layer is large and the portion where the resin layer is small, and a part of the sealing resin penetrates into the gap. Since the filling amount of the sealing resin containing the phosphor covering the surface is not constant, and the light projecting direction is different due to the difference in the light projecting surface of the sealing resin, there is a problem that uneven color and uneven brightness occur. is there. Further, since the entire light emitting diode chip that generates heat is covered with the sealing resin, there is a problem that the amount of heat radiation is small and the entire light emitting diode device is heated to a high temperature.

本発明は、基板や樹脂層の反り等の変形を防止または低減することができると共に、放熱量を増大させることができる発光ダイオード装置および照明装置を提供することを目的とする。   An object of the present invention is to provide a light-emitting diode device and an illumination device that can prevent or reduce deformation such as warping of a substrate or a resin layer and can increase the amount of heat dissipation.

請求項1に記載の発明は、表面および段部を有する基板部ならびに基板部間に設けられたスリット部を有してなる基板と;前記基板部表面に複数形成された凹部と前記スリット部を介して基板部裏面の段部を被覆する嵌合部とを有し、嵌合部と基板部裏面との間に空間部を形成してなる樹脂層と;前記基板部に配設された導電層;前記凹部内に配設されるとともに前記導電層に電気的に接続された発光ダイオードチップと;を具備することを特徴とする。   The invention described in claim 1 includes a substrate portion having a surface and a step portion, and a substrate having a slit portion provided between the substrate portions; and a plurality of recesses and the slit portion formed on the surface of the substrate portion. A resin layer having a fitting portion covering the step portion on the back surface of the substrate portion, and forming a space portion between the fitting portion and the back surface of the substrate portion; and a conductive layer disposed on the substrate portion A light emitting diode chip disposed in the recess and electrically connected to the conductive layer.

前記基板部は、長手方向に複数個配列されていてもよいし、マトリクス上に配列されていてもよく、前記スリット部はこの基板部間に形成される空間をいう。   A plurality of the substrate portions may be arranged in the longitudinal direction, or may be arranged on a matrix, and the slit portion refers to a space formed between the substrate portions.

前記段部は、基板部裏面に長手方向に沿って連続的に形成されていてもよいし、断続的でもよい。また前記段部は、凹部、凸部等であってもよく、前記樹脂層の一部が基板部の一部に入り込むような構成であって、樹脂層が基板部から浮かないように構成されいてればよい。   The stepped portion may be continuously formed on the back surface of the substrate portion along the longitudinal direction, or may be intermittent. The step portion may be a concave portion, a convex portion, or the like, and is configured such that a part of the resin layer enters a part of the substrate portion, and is configured so that the resin layer does not float from the substrate portion. It only has to be.

前記嵌合部と基板部裏面との間に形成される空間部は、放熱通路となり得る構成であれば、どのような構造であってもよい。   The space portion formed between the fitting portion and the back surface of the substrate portion may have any structure as long as it can be a heat dissipation path.

前記樹脂層は、スリット部の全域に樹脂層が充填されていてもよいし、空隙を有していてもよい。スリット部全域に充填される場合には、基板全体の強度がアップするとともに、樹脂層が基板から剥離して浮き上がりにくくなる。また、スリットに空隙を有する場合には、この空隙から発光ダイオードチップの熱が放熱され、樹脂層と基板との熱膨張差による、基板から樹脂層の浮き上がりを抑制することができる。   The resin layer may be filled with a resin layer throughout the slit portion or may have a gap. When the entire slit portion is filled, the strength of the entire substrate is increased, and the resin layer is not easily lifted off from the substrate. Further, when the slit has a gap, the heat of the light emitting diode chip is radiated from the gap, and the lifting of the resin layer from the substrate due to the difference in thermal expansion between the resin layer and the substrate can be suppressed.

請求項2に記載の発明は、照明器具本体と;前記基板部裏面を前記照明器具本体に当接して配設された請求項1記載の発光ダイオード装置と;を具備することを特徴とする。   The invention according to claim 2 is characterized by comprising: a lighting fixture body; and the light emitting diode device according to claim 1, wherein the back surface of the substrate portion is disposed in contact with the lighting fixture body.

前記基板部裏面を前記照明器具本体に当接することによって、発光ダイオードチップの熱を伝導する。   Heat of the light emitting diode chip is conducted by bringing the back surface of the substrate portion into contact with the lighting fixture body.

請求項1に係る発明によれば、複数の基板部同士の間において、基板にスリットを形成しているので、基板と樹脂層との熱膨張差により、樹脂層および基板に反り等の変形が発生しようとしても、前記樹脂層の一部が基板部の一部に入り込んで樹脂層が基板部から浮かないようにできる。さらに、前記嵌合部と基板部裏面との間に形成される空間部から発光ダイオードチップの熱を放熱でき、基板と樹脂層の熱膨張差による前記反り等の変形を低減することができる。この結果、樹脂層に形成された凹部の変形に起因する色むらや輝度むらを防止または低減することができる。   According to the first aspect of the present invention, since the slit is formed in the substrate between the plurality of substrate portions, the resin layer and the substrate are deformed such as warpage due to the difference in thermal expansion between the substrate and the resin layer. Even if it is going to be generated, a part of the resin layer can enter a part of the substrate part so that the resin layer does not float from the substrate part. Furthermore, the heat of the light emitting diode chip can be radiated from the space formed between the fitting portion and the back surface of the substrate portion, and deformation such as warpage due to the difference in thermal expansion between the substrate and the resin layer can be reduced. As a result, it is possible to prevent or reduce color unevenness and brightness unevenness due to deformation of the recesses formed in the resin layer.

請求項2に係る発明によれば、前記基板部裏面を前記照明器具本体に当接することによって、前記嵌合部と基板部裏面との間に形成される空間部は、放熱通路となり、発光ダイオードチップの熱を放熱する。すなわち、前記空間部は、基板部の長手方向等に貫通する構成となるので、空気流通路を増大させ、スリットに隣り合う基板部と樹脂層を冷却させることができる。これにより、発光ダイオード発光部の高温昇温を防止または抑制することができる。   According to the invention which concerns on Claim 2, the space part formed between the said fitting part and a board | substrate back surface by making the said board | substrate part back surface contact | abut to the said lighting fixture main body becomes a thermal radiation path | route, and a light emitting diode Dissipate the heat of the chip. That is, since the space portion is configured to penetrate in the longitudinal direction of the substrate portion, the air flow passage can be increased, and the substrate portion adjacent to the slit and the resin layer can be cooled. Thereby, the high temperature temperature rise of the light emitting diode light emitting part can be prevented or suppressed.

以下、本発明の発光ダイオード装置の一実施形態について、図面を参照して説明する。図1は本発明の一実施形態に係る発光ダイオード装置の平面図、図2は同じく基板の平面図、図3は図1のA−A線要部断面図、図4は図1のB−B線要部断面図、図5は図1のC−C線要部断面図、図6は他の実施形態に係る発光ダイオード装置であって、図1のB−B線に相当する部分で切断した要部断面図である。   Hereinafter, an embodiment of a light-emitting diode device of the present invention will be described with reference to the drawings. 1 is a plan view of a light emitting diode device according to an embodiment of the present invention, FIG. 2 is a plan view of the substrate, FIG. 3 is a cross-sectional view taken along line AA of FIG. 1, and FIG. FIG. 5 is a sectional view taken along the line CC of FIG. 1, and FIG. 6 is a light-emitting diode device according to another embodiment, corresponding to the line BB of FIG. It is the principal part sectional drawing cut | disconnected.

図において、発光ダイオード装置1は、ほぼ正方形平板の基板2の上面2a上に1列状の複数の基板部3と、端子部4a,4b、5a,5b、そしてスリット部6を形成している。これら基板部3は、基板2の表面2a上にて、複数の発光ダイオード発光部13を図1中横方向に1列状に配列して形成されている。この基板部3は、所要の間隔であるスリット部6を置いて、例えば16行で配設されている。   In the figure, the light-emitting diode device 1 has a plurality of substrate portions 3, a terminal portion 4a, 4b, 5a, 5b, and a slit portion 6 formed on an upper surface 2a of a substantially square flat substrate 2. . These substrate portions 3 are formed by arranging a plurality of light emitting diode light emitting portions 13 in a line in the horizontal direction in FIG. 1 on the surface 2 a of the substrate 2. The substrate portion 3 is arranged in 16 rows, for example, with slit portions 6 having a required interval.

基板2は、放熱性と剛性を有するアルミニウム(Al)やニッケル(Ni)等の金属製平板からなり、隣り合う基板部3のほぼ同じ長さまたは若干短い長さの貫通孔である所定幅のスリット部6を形成している。各基板部3上には、図3で示すように電気絶縁層7を介して導電層の一例である回路パターン8が配設されている。   The substrate 2 is made of a flat plate made of metal such as aluminum (Al) or nickel (Ni) having heat dissipation and rigidity, and has a predetermined width which is a through-hole having substantially the same length or slightly shorter length of the adjacent substrate portion 3. A slit portion 6 is formed. As shown in FIG. 3, a circuit pattern 8, which is an example of a conductive layer, is disposed on each substrate portion 3 with an electrical insulating layer 7 interposed therebetween.

また、基板部3には、その幅方向両側に、例えば角形の切欠3b,3cが形成され、これら一対の切欠3b,3cを長手方向に所定のピッチで複数対形成されている。さらに、基板部3は、樹脂層12を形成する一面(図中上面)の反対側である裏面3d側において、基板部3の幅方向両側に所要形状の左右一対の段部3e,3fを形成している。これら一対の段部3e,3fは基板部3の長手方向の全長に亘って連続的に形成されている。   In addition, for example, rectangular notches 3b and 3c are formed on both sides in the width direction of the substrate portion 3, and a plurality of pairs of these notches 3b and 3c are formed at a predetermined pitch in the longitudinal direction. Further, the substrate portion 3 is formed with a pair of left and right step portions 3e and 3f having a required shape on both sides in the width direction of the substrate portion 3 on the back surface 3d side opposite to the one surface (upper surface in the drawing) on which the resin layer 12 is formed. is doing. The pair of step portions 3 e and 3 f are continuously formed over the entire length of the substrate portion 3 in the longitudinal direction.

図5は基板2の上面(表面)2a上に形成された回路パターン8を主に示す平面図である。回路パターン8は、銅(Cu)箔上に、とニッケル(Ni)めっき、さらに金(Au)めっきすることにより形成され、各基板部3上にそれぞれ形成される複数の基板部用回路パターン8aと、これら基板部用回路パターン8aの長手方向両端部にそれぞれ電気的に接続される接続用回路パターン8b,8cとを有する。これら複数の基板部用回路パターン8aは、接続用回路パターン8b,8cに対して電気的に並列に接続されている。   FIG. 5 is a plan view mainly showing the circuit pattern 8 formed on the upper surface (front surface) 2 a of the substrate 2. The circuit pattern 8 is formed on a copper (Cu) foil by nickel (Ni) plating and further gold (Au) plating, and a plurality of circuit pattern 8a for a substrate part formed on each substrate part 3 respectively. And circuit patterns 8b and 8c for connection that are electrically connected to both ends in the longitudinal direction of the circuit pattern 8a for the substrate. The plurality of circuit pattern 8a for the substrate section are electrically connected in parallel to the connection circuit patterns 8b and 8c.

また、これら接続用回路パターン8b,8cは、その一端が上部端子部4a,5aに接続し、他端は、下部端子部4b,5bに接続している。なお、接続用回路パターン8b,8cは、PBTやPPA,PC等の樹脂により被覆されて電気的に絶縁してもよい。そして、端子部4a,5aの一方は直流電圧の例えば陽極側が印加され、端子部4b,5bの一方は、直流電圧の陰極側が供給されるようになっている。すなわち、端子部4a,5a同士間と、端子部4b,5b同士間のいずれかに直流電圧を適宜印加し得るようになっている。   The connection circuit patterns 8b and 8c have one end connected to the upper terminal portions 4a and 5a and the other end connected to the lower terminal portions 4b and 5b. The connection circuit patterns 8b and 8c may be covered with a resin such as PBT, PPA, or PC to be electrically insulated. One of the terminal portions 4a and 5a is supplied with, for example, the anode side of the DC voltage, and one of the terminal portions 4b and 5b is supplied with the cathode side of the DC voltage. That is, a DC voltage can be appropriately applied between the terminal portions 4a and 5a and between the terminal portions 4b and 5b.

図2に示すように、基板部用回路パターン8aは、基板部の幅とほぼ等しい幅または若干狭い幅に形成され、この基板部上に、複数の小回路パターン8a1を基板部3の長手方向に所要の電気絶縁用間隙8dを介して順次配設し、この長手方向両端部には、接続用回路パターン8b,8cにそれぞれ接続される接続端子8a2,8a3をそれぞれ設けている。   As shown in FIG. 2, the circuit pattern 8a for the substrate portion is formed to have a width substantially equal to or slightly narrower than the width of the substrate portion, and a plurality of small circuit patterns 8a1 are arranged on the substrate portion in the longitudinal direction of the substrate portion 3. Are sequentially arranged via a required electric insulation gap 8d, and connection terminals 8a2 and 8a3 respectively connected to connection circuit patterns 8b and 8c are provided at both ends in the longitudinal direction.

小回路パターン8a1は、各基板部3の長手方向で隣り合う回路パターン8a1側へ突出する矩形の突出端部上に、発光ダイオードチップ9を載置させて、ダイボンディング等により底面電極に電気的に接続する一方、発光ダイオードチップ9の上面電極にボンディングワイヤ10を介して電気的に接続される回路パターンである。なお、発光ダイオードチップ9は、例えば青色光を発光する窒化ガリウム(GaN)系から構成されている。また、発光ダイオードチップ9は、2本のボンディングワイヤ10により長手方向で隣り合う小回路パターン8a1にそれぞれ電気的に接続されるものでもよい。   The small circuit pattern 8a1 is formed by placing a light emitting diode chip 9 on a rectangular protruding end protruding to the side of the circuit pattern 8a1 adjacent to each other in the longitudinal direction of each substrate 3, and electrically connecting the bottom electrode by die bonding or the like. The circuit pattern is electrically connected to the upper surface electrode of the light-emitting diode chip 9 through the bonding wire 10. The light emitting diode chip 9 is made of, for example, a gallium nitride (GaN) system that emits blue light. The light emitting diode chip 9 may be electrically connected to the small circuit patterns 8a1 adjacent in the longitudinal direction by two bonding wires 10.

すなわち、これら小回路パターン8a1は各基板部3毎に、複数、例えば16個の発光ダイオードチップ9を順次直列に接続している。基板部3は基板2上に例えば16行配列されているので、発光ダイオードチップ9は基板2上に16行16列でマトリクス状に配設されている。   That is, the small circuit patterns 8a1 are formed by sequentially connecting a plurality of, for example, 16 light emitting diode chips 9 in series for each substrate unit 3. Since the substrate section 3 is arranged on the substrate 2, for example, in 16 rows, the light emitting diode chips 9 are arranged on the substrate 2 in a matrix of 16 rows and 16 columns.

そして、図1示すように各基板部3は、その基板部3上に樹脂層12を設け、発光ダイオードチップ9の周囲を取り囲み、漸次拡開する逆円錐台状の凹部11を発光ダイオードチップ9毎に一体に形成している。各凹部11は、その凹部内面に反射面11aを形成し、凹部11に配設された発光ダイオードチップ9毎に1単位の発光ダイオード発光部13をそれぞれ構成することになる。   As shown in FIG. 1, each substrate portion 3 is provided with a resin layer 12 on the substrate portion 3, surrounds the periphery of the light emitting diode chip 9, and has an inverted truncated cone-shaped recess 11 that gradually expands. Each is formed integrally. Each recess 11 forms a reflection surface 11 a on the inner surface of the recess, and constitutes one unit of light emitting diode light emitting portion 13 for each light emitting diode chip 9 disposed in the recess 11.

また、各凹部11の内部には、透光性を有するシリコーン樹脂やエポキシ樹脂等の熱硬化性透明樹脂を注入し、凹部11開口端とほぼ面一になるように充填し、封止樹脂14としてそれぞれ形成している。さらに、この封止樹脂14内には、例えば黄色発光の蛍光体が混入されている。   Moreover, a thermosetting transparent resin such as a translucent silicone resin or epoxy resin is injected into each recess 11 and filled so as to be substantially flush with the opening end of the recess 11. As each formed. Further, for example, a phosphor emitting yellow light is mixed in the sealing resin 14.

樹脂層12は、例えばPBT(ポリブチレンテレフタレート)やPPA(ポリフタルアミド)、PC(ポリカーボネート)等の合成樹脂により形成されている。この樹脂層12は、基板部の幅方向両側を挟持する一対の側面部12a,12bを一体に連成して断面コ字状に形成されている。なお、図6に示すように、スリット部6が全て樹脂層12で充填されていてもよい。   The resin layer 12 is formed of a synthetic resin such as PBT (polybutylene terephthalate), PPA (polyphthalamide), or PC (polycarbonate). The resin layer 12 is formed in a U-shaped cross section by integrally connecting a pair of side surface portions 12a and 12b sandwiching both sides in the width direction of the substrate portion. In addition, as shown in FIG. 6, all the slit portions 6 may be filled with the resin layer 12.

また、樹脂層12において、図1、図3示すように上方側に向けて開口する有底の溝15が基板部3全幅に亘って形成されている。各溝15は、回路パターン8の一部を外部に露出させて形成されている。また、この樹脂層12は、溝15部分における基板部2の幅方向の両側においても一対の側面部12a,12bを形成している。これら一対の側面部12a,12bは、図4に示すように、基板部3を幅方向で挟持するように配設され、樹脂層12の幅方向の両側面部と一体に連結されて断面形状がほぼコ字状基板に形成されている。   Further, in the resin layer 12, a bottomed groove 15 that opens upward is formed across the entire width of the substrate portion 3 as shown in FIGS. 1 and 3. Each groove 15 is formed by exposing a part of the circuit pattern 8 to the outside. The resin layer 12 also forms a pair of side surfaces 12a and 12b on both sides in the width direction of the substrate portion 2 in the groove 15 portion. As shown in FIG. 4, the pair of side surface portions 12 a and 12 b are arranged so as to sandwich the substrate portion 3 in the width direction, and are integrally connected to both side surface portions in the width direction of the resin layer 12 to have a cross-sectional shape. It is formed on a substantially U-shaped substrate.

図4、図5に示すように、樹脂層12の一対の側面部12a,12bは、基板部3の幅方向の両側を、幅方向で挟持するように所要厚でそれぞれ被覆し、図1に示すように基板部3の長手方向の全長に亘って連続的に連成されている。また、一対の側面部12a,12bは、図4で示す基板部3の切欠3b,3cにそれぞれ係合する角柱状の係合凸部12a1,12b1をそれぞれ形成している。これら係合凸部12a1,12b1は隣り合う凹部11間に形成される溝15と同一位置に形成されている。また、図5に示すように、各係合凸部12a1,12b1の厚さ方向上端は基板部3の表面2aとほぼ面一に形成されている。   As shown in FIGS. 4 and 5, the pair of side surface portions 12a and 12b of the resin layer 12 are coated with a required thickness so as to sandwich both sides in the width direction of the substrate portion 3 in the width direction. As shown, the substrate portion 3 is continuously coupled over the entire length in the longitudinal direction. Further, the pair of side surface portions 12a and 12b form prismatic engagement convex portions 12a1 and 12b1 that respectively engage with the notches 3b and 3c of the substrate portion 3 shown in FIG. These engaging convex portions 12a1 and 12b1 are formed at the same position as the groove 15 formed between the adjacent concave portions 11. Further, as shown in FIG. 5, the upper ends in the thickness direction of the respective engaging convex portions 12 a 1 and 12 b 1 are formed substantially flush with the surface 2 a of the substrate portion 3.

図4,図5に示すように、樹脂層12の一対の側面部12a,12bは、各下端部を基板部3裏面3d側へほぼ直角にそれぞれ屈曲し、基板部3裏面3d側の左右一対の段部3e,3fにそれぞれ嵌合する嵌合部12a2,12b2を一体に連成している。これにより、これら一対の側面部12a,12bの一対の嵌合部12a2,12b2が基板部裏面3d側の一対の段部3e,3fに嵌合することにより、樹脂層12に形成された一対の側面部12a,12bにより基板部3を厚さ方向に抱え持ちしている。すなわち、樹脂層12と一対の側面部12a,12bにより、基板部3を表裏方向と幅方向の3方向で挟持すると共に、基板部3の長手方向で係止しているので、樹脂層12を基板部3上の所定の位置に強固に固定することができる。   As shown in FIGS. 4 and 5, the pair of side surface portions 12 a and 12 b of the resin layer 12 are bent at their lower end portions substantially at right angles to the back surface 3 d side of the substrate portion 3, and left and right pair on the back surface 3 d side of the substrate portion 3. The fitting portions 12a2 and 12b2 that are respectively fitted to the step portions 3e and 3f are integrally formed. Accordingly, the pair of fitting portions 12a2 and 12b2 of the pair of side surface portions 12a and 12b are fitted to the pair of stepped portions 3e and 3f on the substrate portion back surface 3d side, whereby a pair of formed on the resin layer 12 is formed. The substrate portion 3 is held in the thickness direction by the side portions 12a and 12b. In other words, the resin layer 12 and the pair of side surface portions 12a and 12b sandwich the substrate portion 3 in the three directions of the front and back direction and the width direction, and are locked in the longitudinal direction of the substrate portion 3. It can be firmly fixed at a predetermined position on the substrate unit 3.

上述した樹脂層12を射出成形により基板2に形成する場合には、各溝15を形成するための成形型の左右両側に、隣り合う凹部11同士を連結する左右一対の側面部12a,12bを設けているので、これら凹部11を射出成形により形成する場合には、その配列方向に樹脂を射出することにより、その樹脂を、各溝15の一対の側面部12a1,12b1を通して列方向他端側の隅々まで行き渡らせることができる。このために、複数の凹部11を射出成形によりほぼ同時に形成することができると共に、その成形性を向上させることができる。   When the resin layer 12 described above is formed on the substrate 2 by injection molding, a pair of left and right side portions 12a and 12b that connect adjacent recesses 11 are formed on the left and right sides of the mold for forming each groove 15. When these recesses 11 are formed by injection molding, the resin is injected in the arrangement direction, so that the resin passes through the pair of side surface portions 12a1 and 12b1 of the grooves 15 in the other end in the column direction. Can be spread all over. For this reason, while being able to form the some recessed part 11 substantially simultaneously by injection molding, the moldability can be improved.

また事前に、一対の側面部12a,12b等を含む樹脂層12を弾性樹脂により形成する場合には、基板部3の回路パターン8上に一対の側面部12a,12bの下面開口12c端を載置し、樹脂層12を基板部3側へ押し込むことにより、簡単迅速かつ確実に取り付けることができる。   In addition, when the resin layer 12 including the pair of side surface portions 12a and 12b is formed of an elastic resin in advance, the ends of the lower surface openings 12c of the pair of side surface portions 12a and 12b are mounted on the circuit pattern 8 of the substrate portion 3. The resin layer 12 can be simply and quickly and reliably attached by pushing the resin layer 12 toward the substrate portion 3 side.

すなわち、樹脂層12側を基板部3側へ押し込むと、一対の側面部12a,12bの下端が次第に拡大するように弾性変形して行き、さらに、樹脂層12を基板部3側へ押し込み続けるとやがて基板部3裏面3dへ進み、この基板部3裏面3dへ到達したときに、一対の側面部12a,12bの嵌合部12a2,12b2が基板部3裏面3dの段部3e,3fに嵌合される。   That is, when the resin layer 12 side is pushed into the substrate portion 3 side, the lower ends of the pair of side surface portions 12a and 12b are elastically deformed so as to gradually expand, and further, when the resin layer 12 is continuously pushed into the substrate portion 3 side. Eventually, the process proceeds to the back surface 3d of the board part 3, and when the back surface 3d of the board part 3 is reached, the fitting parts 12a2 and 12b2 of the pair of side face parts 12a and 12b are fitted to the step parts 3e and 3f of the back surface 3d of the board part 3 Is done.

さらに、樹脂層12の側面部12a,12bは、その各対の係合凸部12a1,12b1を、基板部3の各切欠3b,3cに係合させているので、これら側面部12a,12bに一体に連成されている樹脂層12が基板部3の長手方向に変位するのを防止することができ、その反射面11aの変位に起因する光学的性能の変動を防止することができる。   Further, the side surface portions 12a and 12b of the resin layer 12 have their respective engaging projections 12a1 and 12b1 engaged with the notches 3b and 3c of the substrate portion 3, so that the side surface portions 12a and 12b It is possible to prevent the resin layer 12 integrally coupled from being displaced in the longitudinal direction of the substrate portion 3, and to prevent fluctuations in optical performance due to the displacement of the reflecting surface 11a.

そして、この発光ダイオード装置1は、基板2の上面(表面)2a上に、複数の基板部3を設けることにより、複数の発光ダイオードチップ9を基板2上面2a上に全面的に配設しているので、面状に発光させることができる。   In the light emitting diode device 1, a plurality of light emitting diode chips 9 are disposed on the entire top surface 2a of the substrate 2 by providing a plurality of substrate portions 3 on the top surface (surface) 2a of the substrate 2. Therefore, light can be emitted in a planar shape.

また、発光ダイオード装置1は、1枚の基板2上に、1列状の基板部3の複数個を形成しているので、これら基板部3毎にプレス剪断等により打ち抜くことにより、1列状の複数の基板部3をほぼ同時に形成することができる。また、基板部3は、複数の発光ダイオードチップ9を電気的に直列に接続しているので、これら発光ダイオードチップ9の輝度をほぼ等しくすることができる。さらに、複数の基板部3を端子部4a,5aまたは4b,5bに対して電気的に並列に接続しているので、万一、これら基板部3の一部の発光ダイオードチップ9が故障等により点灯しない事態が発生しても、他の基板部3の発光ダイオードチップ9を通電し、点灯させることができる。   Further, since the light emitting diode device 1 has a plurality of one-row substrate portions 3 formed on one substrate 2, each substrate portion 3 is punched by press shearing or the like to form one row. The plurality of substrate portions 3 can be formed almost simultaneously. Moreover, since the board | substrate part 3 has electrically connected the some light emitting diode chip 9 in series, the brightness | luminance of these light emitting diode chips 9 can be made substantially equal. Further, since the plurality of substrate parts 3 are electrically connected in parallel to the terminal parts 4a, 5a or 4b, 5b, some of the light emitting diode chips 9 of the substrate parts 3 should be damaged due to failure or the like. Even if the lighting does not occur, the light-emitting diode chip 9 of the other substrate unit 3 can be energized and lit.

次に、この発光ダイオード装置1の作用を説明する。まず、図2において、左右一対の端子部4a、5a間または端子部4bと5b間に所定の直流電圧が印加されると、この直流電圧が一対の接続用回路パターン8a,8bを介して各基板部3の各発光ダイオードチップ9に印加されて発光ダイオードチップ9が青色に発光する。この青色発光は透明の封止樹脂14内の黄色発光の蛍光体を励起し、黄色を発光させると共に発光ダイオードチップ9の青色光と混色することにより白色光となって、反射面11aにより反射されて開口から外部へ放射される。   Next, the operation of the light emitting diode device 1 will be described. First, in FIG. 2, when a predetermined DC voltage is applied between the pair of left and right terminal portions 4a and 5a or between the terminal portions 4b and 5b, the DC voltage is passed through the pair of connection circuit patterns 8a and 8b. Applied to each light emitting diode chip 9 of the substrate unit 3, the light emitting diode chip 9 emits blue light. This blue light emission excites the yellow light emitting phosphor in the transparent sealing resin 14 to emit yellow light and mix with the blue light of the light emitting diode chip 9 to form white light, which is reflected by the reflecting surface 11a. Radiated from the opening to the outside.

これら発光ダイオードチップ9は発光するとともに発熱し、発光ダイオード装置1全体に伝導するが、基板部3に伝導された熱の一部は、各溝15の外部露出底面である基板部3上面3bの一部から外部へ放出されるので、その昇温を抑制することができる。   These light emitting diode chips 9 emit light and generate heat, and are conducted to the entire light emitting diode device 1, but a part of the heat conducted to the substrate portion 3 is on the substrate portion 3 upper surface 3 b which is the externally exposed bottom surface of each groove 15. Since it is released from a part to the outside, the temperature rise can be suppressed.

さらに、発光ダイオードチップ9の熱は、前記嵌合部12a2,12b2と基板部3裏面3dとの間に形成される空間部12a3,12b3から放熱でき、基板2と樹脂層12の熱膨張差による前記反り等の変形を低減することができる。この結果、樹脂層12に形成された凹部11の変形に起因する色むらや輝度むらを防止または低減することができる。   Furthermore, the heat of the light emitting diode chip 9 can be radiated from the space portions 12a3 and 12b3 formed between the fitting portions 12a2 and 12b2 and the back surface 3d of the substrate portion 3, and is caused by the difference in thermal expansion between the substrate 2 and the resin layer 12. Deformation such as warpage can be reduced. As a result, it is possible to prevent or reduce color unevenness and brightness unevenness due to deformation of the recess 11 formed in the resin layer 12.

前記樹脂層12は、図6に示すように、スリット部6の全域に樹脂が充填されていてもよいし、図4および図5に示すように、空隙を有していてもよいが、スリット部6に空隙を有する場合には、この空隙から発光ダイオードチップ9の熱が放熱され、樹脂層12と基板2との熱膨張差による、基板2から樹脂層12の浮き上がりを抑制することができる。   As shown in FIG. 6, the resin layer 12 may be filled with resin in the entire area of the slit portion 6 or may have a gap as shown in FIGS. 4 and 5. When the portion 6 has a gap, the heat of the light emitting diode chip 9 is radiated from the gap, and the floating of the resin layer 12 from the substrate 2 due to the difference in thermal expansion between the resin layer 12 and the substrate 2 can be suppressed. .

次に、上記発光ダイオード装置を使用した照明装置の一実施形態について、図面を参照して説明する。図7は本発明に係る一実施形態の照明装置であって、図1のC−C線に相当する部分で切断した要部断面図である。   Next, an embodiment of a lighting device using the light emitting diode device will be described with reference to the drawings. 7 is an illuminating device according to an embodiment of the present invention, and is a cross-sectional view of a principal part cut at a portion corresponding to the line CC in FIG.

図において、照明装置は、前記発光ダイオード装置1の基板部3裏面3dを照明器具本体30に当接することによって、前記嵌合部12a2,12b2と基板部3裏面3dとの間に形成される空間部12a3,12b3は、放熱通路となり、発光ダイオードチップ9の熱を放熱する。すなわち、前記空間部12a3,12b3は、基板部3の長手方向等に貫通する構成となるので、空気流通路を増大させ、スリット部6に隣り合う基板部3と樹脂層12を冷却させることができる。これにより、発光ダイオード発光部13の高温昇温を防止または抑制することができる。   In the figure, the illuminating device is a space formed between the fitting portions 12a2 and 12b2 and the back surface 3d of the substrate portion 3 by bringing the back surface 3d of the substrate portion 3 of the light emitting diode device 1 into contact with the luminaire main body 30. The parts 12a3 and 12b3 serve as heat dissipation paths and radiate heat from the light emitting diode chip 9. That is, since the space portions 12a3 and 12b3 penetrate in the longitudinal direction of the substrate portion 3, the air flow passage is increased, and the substrate portion 3 adjacent to the slit portion 6 and the resin layer 12 can be cooled. it can. Thereby, the high temperature temperature rising of the light emitting diode light emission part 13 can be prevented or suppressed.

また、樹脂層12は、樹脂製であり、金属製の基板2および基板部3よりも熱膨張率が大きいので、その熱膨張差により、これらに反り等の変形が発生しようとするが、上述した放熱等により樹脂層12の変形を防止または低減することができる。   Further, since the resin layer 12 is made of resin and has a higher coefficient of thermal expansion than the metal substrate 2 and the substrate portion 3, the resin layer 12 tends to be deformed such as warpage due to the difference in thermal expansion. The deformation of the resin layer 12 can be prevented or reduced by the released heat.

このために、樹脂層12の反射面11aや封止樹脂14の変形により投光方向がずれて色むらや輝度むら(明るさのむら)が発生するのを防止または低減することができる。   For this reason, it is possible to prevent or reduce the occurrence of color unevenness and brightness unevenness (brightness unevenness) due to deviation of the light projecting direction due to deformation of the reflecting surface 11a of the resin layer 12 and the sealing resin 14.

本発明の一実施形態に係る発光ダイオード装置の平面図。The top view of the light emitting diode apparatus which concerns on one Embodiment of this invention. 同じく基板の平面図。The top view of a board | substrate similarly. 図1のA−A線要部断面図。FIG. 2 is a cross-sectional view taken along line AA in FIG. 1. 図1のB−B線要部断面図。FIG. 3 is a cross-sectional view of the main part of the line BB in FIG. 1. 図1のC−C線要部断面図。The CC sectional view taken on the line of FIG. 他の実施形態に係る発光ダイオード装置であって、図1のB−B線に相当する部分で切断した要部断面図。FIG. 6 is a cross-sectional view of a principal part of a light-emitting diode device according to another embodiment, cut at a portion corresponding to the line BB in FIG. 1. 本発明の一実施形態に係る照明装置であって、図1のC−C線に相当する部分で切断した要部断面図。It is an illuminating device which concerns on one Embodiment of this invention, Comprising: The principal part sectional drawing cut | disconnected by the part corresponded to CC line of FIG.

符号の説明Explanation of symbols

1…発光ダイオード装置、2…基板、3…基板部、3b,3c…切欠、3e,3f…段部、4a,4b、5a,5b…端子部、6…スリット部、7…絶縁層、8…回路パターン、8a…基板部用回路パターン、8b,8c…接続用回路パターン、9…発光ダイオードチップ、11…凹部、11a…反射面、12…樹脂層、14…封止樹脂、15…溝、12a,12b…一対の側面部、12a1,12b1…係合凸部、12a2,12b2…嵌合部、12a3,12b3…空間部、13…発光ダイオード発光部。   DESCRIPTION OF SYMBOLS 1 ... Light emitting diode device, 2 ... Board | substrate, 3 ... Board | substrate part, 3b, 3c ... Notch, 3e, 3f ... Step part, 4a, 4b, 5a, 5b ... Terminal part, 6 ... Slit part, 7 ... Insulating layer, 8 ... Circuit pattern, 8a ... Circuit pattern for substrate part, 8b, 8c ... Circuit pattern for connection, 9 ... Light emitting diode chip, 11 ... Recess, 11a ... Reflecting surface, 12 ... Resin layer, 14 ... Sealing resin, 15 ... Groove , 12a, 12b ... a pair of side parts, 12a1, 12b1, ... engaging convex part, 12a2, 12b2, ... fitting part, 12a3, 12b3 ... space part, 13 ... light emitting diode light emitting part.

Claims (2)

表面および段部を有する基板部ならびに基板部間に設けられたスリット部を有してなる基板と;
前記基板部表面に複数形成された凹部と前記スリット部を介して基板部裏面の段部を被覆する嵌合部とを有し、嵌合部と基板部裏面との間に空間部を形成してなる樹脂層と;
前記基板部に配設された導電層;
前記凹部内に配設されるとともに前記導電層に電気的に接続された発光ダイオードチップと;
を具備することを特徴とする発光ダイオード装置。
A substrate portion having a surface portion and a step portion, and a substrate having a slit portion provided between the substrate portions;
A plurality of concave portions formed on the surface of the substrate portion and a fitting portion that covers a step portion on the back surface of the substrate portion via the slit portion, and a space portion is formed between the fitting portion and the back surface of the substrate portion. A resin layer comprising:
A conductive layer disposed on the substrate portion;
A light emitting diode chip disposed in the recess and electrically connected to the conductive layer;
A light-emitting diode device comprising:
照明器具本体と;
前記基板部裏面を前記照明器具本体に当接して配設された請求項1記載の発光ダイオード装置と;
を具備することを特徴とする照明装置。
A lighting fixture body;
The light-emitting diode device according to claim 1, wherein the back surface of the substrate portion is disposed in contact with the lighting fixture body;
An illumination device comprising:
JP2005275902A 2005-09-22 2005-09-22 Light emitting diode device and lighting apparatus Pending JP2007088253A (en)

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Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013120821A (en) * 2011-12-07 2013-06-17 Citizen Holdings Co Ltd Light-emitting device
JP2015073131A (en) * 2015-01-05 2015-04-16 ローム株式会社 Led light emitter and led bulb

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013120821A (en) * 2011-12-07 2013-06-17 Citizen Holdings Co Ltd Light-emitting device
JP2015073131A (en) * 2015-01-05 2015-04-16 ローム株式会社 Led light emitter and led bulb

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