JP2007086108A - Method of generating deep ultraviolet laser light and deep ultraviolet laser device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain high output by efficiently generating deep ultraviolet laser light having a wavelength in a deep ultraviolet range. <P>SOLUTION: In a method of generating deep wavelength laser light that generates a fourth higher harmonic of laser light having a wavelength in a 1 μm band, generating laser light through sum frequency generation of the fourth higher harmonic and laser light having a wavelength in a 1.4 to 1.5 μm band, and generates laser light of ≤200 nm in wavelength through sum frequency generation of the laser light generated through the sum frequency generation and the laser light having the wavelength in the 1.4 to 1.5 μm band, laser light of 193.3 to 193.5 nm in wavelength is generated as the laser light of ≤200 nm in wavelength, where the 1 μm band ranges from 1,063 to 1,065 nm and the 1.4 to 1.5 μm band ranges from 1,410 to 1,424 nm. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for generating deep ultraviolet laser light and a deep ultraviolet laser apparatus, and more particularly, to a deep ultraviolet region (wavelength of about 190 to 270 nm) using a wavelength conversion technique using a nonlinear optical effect. The present invention relates to a method for generating deep ultraviolet laser light and a deep ultraviolet laser apparatus configured to generate ultraviolet laser light.

  2. Description of the Related Art In recent years, various deep ultraviolet laser devices that generate deep ultraviolet laser light have been proposed for application to microfabrication techniques in the field of electronic industries such as semiconductor manufacturing processes.

  Such a conventional deep ultraviolet laser device is configured to generate deep ultraviolet laser light having a target wavelength by applying a wavelength conversion technique using a nonlinear optical effect.

  That is, the conventional deep ultraviolet laser device multiplies the frequency of the laser beam by generating harmonics, or generates a laser beam having a frequency that is the sum of the frequencies of two input laser beams by combining existing lasers. By generating the sum frequency, laser light having a target wavelength has been obtained.

  However, it is difficult to generate laser light in the wavelength region of about 190 to 200 nm by simple second harmonic generation (doubling the frequency, that is, halving the wavelength) or harmonic generation by repetition thereof. There was a problem that there was.

  Similarly, there is a problem that it is difficult to generate laser light in a wavelength region of 190 to 200 nm in the generation of sum frequency by a combination of wavelengths of solid lasers that are generally used.

  On the other hand, among materials having optical nonlinearity, those having sufficient transparency in a wavelength region of about 190 to 200 nm are limited, and further, it is a necessary condition for effective wavelength conversion. Since there are few crystals that satisfy the phase matching condition, it is difficult to generate laser light in a wavelength region of about 190 to 200 nm even in this respect.

By the way, in general, the nonlinearity of a nonlinear optical medium that performs laser wavelength conversion is on the order of pm / V, and it is known that efficient wavelength conversion is impossible by simply passing laser light. For this reason, conventionally, a technique has been used in which the wavelength conversion efficiency is improved by using an external resonator and arranging a nonlinear medium in the laser light confined in the external resonator.

  However, in such a method, it is necessary to synchronize the resonator length of the external resonator with an integer multiple of the wavelength of the laser beam, which requires a complicated servo system and complicates the configuration. It has also been pointed out that it is necessary to keep the optical loss of the external resonator small.

  In addition, by applying the above-described technique using an external resonator, a technique for generating a laser beam of about 198.5 nm by generating a sum frequency of the second harmonic of an argon laser and an Nd: YAG laser is known. However, since the method using an external resonator has the above-described problems, it has been difficult to widely use it as an industrial application.

On the other hand, a technique for increasing the nonlinear wavelength conversion efficiency by increasing the peak value of the power by applying a pulse laser has been proposed. The eighth harmonic of a laser light source having a wavelength of about 1.547 μm using an optical communication device. Thus, a light source that generates laser light having a wavelength of about 193.4 nm is realized. The wavelength of about 193.4 nm of such a light source is the same as the wavelength of laser light obtained by an argon fluoride laser, and is a wavelength that has received much attention in the field of semiconductor manufacturing.

From various backgrounds as described above, at present, a deep ultraviolet laser beam generation method and an ultraviolet laser device capable of efficiently generating deep ultraviolet laser light having a wavelength in the deep ultraviolet region and further increasing the output can be obtained. Proposals are highly desired.

Note that the prior art that the applicant of the present application knows at the time of filing a patent application is not an invention related to a known literature invention, so there is no prior art document information to be described.

  The present invention has been made in view of the above-mentioned demands of the prior art, and its object is to efficiently generate deep ultraviolet laser light having a wavelength of about 200 nm or less. An object of the present invention is to provide a method for generating deep ultraviolet laser light and an ultraviolet laser apparatus that can be used.

  Also, an object of the present invention is to provide a deep ultraviolet laser beam generation method and an ultraviolet laser apparatus which can generate deep ultraviolet laser beams having a wavelength of about 200 nm or less at a high output. It is what.

  Furthermore, the object of the present invention is to provide a deep ultraviolet laser beam generation method and an ultraviolet laser which can generate a deep ultraviolet laser beam having a wavelength of about 200 nm or less while reducing costs. The device is to be provided.

  Still further, an object of the present invention is to provide a deep ultraviolet laser beam generating method capable of generating a deep ultraviolet laser beam having a wavelength of about 200 nm or less while greatly improving reliability. And an ultraviolet laser apparatus.

  In order to achieve the above-described object, the present invention provides two sum frequency mixing of a fourth harmonic of a laser beam having a wavelength of about 1 μm and a laser beam having a wavelength of about 1.4 to 1.5 μm. A laser beam having a wavelength of about 200 nm or less is obtained.

  FIG. 1 shows the principle of the present invention. Referring to FIG. 1, in the present invention, the second harmonic is generated by generating a harmonic of a laser beam having a wavelength of about 1 μm band. In addition, the fourth harmonic is obtained by generating the second harmonic. Then, a laser beam (first sum frequency generation laser beam) obtained by sum frequency generation of the fourth harmonic and a laser beam having a wavelength of about 1.4 to 1.5 μm is obtained, and the first sum frequency generation laser is obtained. When a laser beam (second sum frequency generation laser beam) is generated by generating a sum frequency of light and a laser beam having a wavelength of about 1.4 to 1.5 μm, the second sum frequency generation laser beam has a wavelength of about 200 nm. It becomes the following laser light.

  That is, the present invention provides a laser beam obtained by generating a sum frequency of the fourth harmonic of a laser beam having a wavelength of about 1 μm and a laser beam having a wavelength of about 1.4 to 1.5 μm, and about 1.4 A laser beam having a wavelength of about 200 nm or less is obtained by generating a sum frequency with a laser beam having a wavelength of ˜1.5 μm.

  Here, a laser beam having a wavelength of about 1 μm is a laser beam having a wavelength of about 1.06 μm, and a laser beam having a wavelength of about 1.4 to 1.5 μm is a laser beam having a wavelength of about 1.42 μm. In this case, according to the present invention, a laser beam obtained by sum frequency generation of a fourth harmonic of a laser beam having a wavelength of about 1.06 μm and a laser beam having a wavelength of about 1.42 μm, A laser beam having a wavelength of about 193 nm can be obtained by generating a sum frequency with a laser beam having a wavelength of 1.42 μm.

  Also, the laser light with a wavelength of about 1 μm band is a laser light with a wavelength of about 1.03 μm band, and the laser light with a wavelength of about 1.4 to 1.5 μm band is a laser light with a wavelength of about 1.55 μm band. In some cases, according to the present invention, a laser beam obtained by sum frequency generation of a fourth harmonic of a laser beam having a wavelength of about 1.03 μm and a laser beam having a wavelength of about 1.55 μm, and about 1 A laser beam having a wavelength of about 193 nm can be obtained by generating a sum frequency of a laser beam having a wavelength of .55 μm.

  More specifically, a laser beam having a wavelength of about 1 μm is a laser beam having a wavelength of about 1.064 μm, and a laser beam having a wavelength of about 1.4 to 1.5 μm is a laser beam having a wavelength of about 1.415 μm. In the case of laser light, according to the present invention, the laser light obtained by sum frequency generation of the fourth harmonic of the laser light having a wavelength of about 1.064 μm and the laser light having a wavelength of about 1.415 μm By generating a sum frequency with a laser beam having a wavelength of about 1.415 μm, a laser beam having a wavelength of about 193.4 nm can be obtained.

  Also, the laser light with a wavelength of about 1 μm band is a laser light with a wavelength of about 1.031 μm band, and the laser light with a wavelength of about 1.4 to 1.5 μm band is a laser light with a wavelength of about 1.550 μm band. In some cases, according to the present invention, a laser beam obtained by sum frequency generation of a fourth harmonic of a laser beam having a wavelength of about 1.031 μm band and a laser beam having a wavelength of about 1.550 μm band, A laser beam having a wavelength of about 193.4 nm can be obtained by generating a sum frequency of a laser beam having a wavelength of .550 μm.

That is, the invention according to claim 1 of the present invention generates a fourth harmonic of a laser beam having a wavelength of 1 μm band, and a sum frequency of the fourth harmonic and a laser beam having a wavelength of 1.4 μm band. Generation of laser light by generation, generation of deep ultraviolet laser light that generates laser light having a wavelength of 200 nm or less by generation of the sum frequency of the laser light generated by the generation of the sum frequency and the laser light having the wavelength of the 1.4 μm band In the method, the 1 μm band is 1063 to 1065 nm, the 1.4 μm band is 1410 to 1424 nm, and a laser beam having a wavelength of 193.3 to 193.5 nm is generated as a laser beam having a wavelength of 200 nm or less. It is what I did.

  The invention according to claim 2 of the present invention generates a fourth harmonic of a laser beam having a wavelength of 1 μm band, and a sum frequency of the fourth harmonic and a laser beam having a wavelength of 1.5 μm band. Generation of laser light by generation, generation of deep ultraviolet laser light that generates laser light having a wavelength of 200 nm or less by generation of the sum frequency of the laser light generated by the above sum frequency generation and the laser light of the above 1.5 μm band wavelength In the method, the 1 μm band is 1027 to 1032 nm, the 1.5 μm band is 1541 to 1571 nm, and a laser beam having a wavelength of 193.3 to 193.5 nm is generated as a laser beam having a wavelength of 200 nm or less. It is what I did.

  The invention described in claim 3 is a deep ultraviolet laser apparatus that generates laser light having a wavelength of 200 nm or less from laser light having a wavelength of 1 μm band and laser light having a wavelength of 1.4 μm band. The first wavelength conversion means for generating the second harmonic of the laser light having the wavelength of 1 μm band, and the laser light having the wavelength of 1 μm band from the second harmonic generated by the first wavelength conversion means. The second wavelength converting means for generating the fourth harmonic, the fourth harmonic generated by the second wavelength converting means and the laser light having a wavelength of 1.4 μm are incident, and the wavelength is generated by sum frequency generation. Third wavelength converting means for generating converted laser light, laser light generated by the wavelength converting means and laser light having the wavelength of the 1.4 μm band incident thereon to convert the wavelength by sum frequency generation Generate In the deep ultraviolet laser apparatus having the fourth wavelength conversion means and generating laser light having a wavelength of 200 nm or less by the fourth wavelength conversion means, the 1 μm band is 1063 to 1065 nm, and the 1.4 μm The band is 1410 to 1424 nm, and the fourth wavelength converting means generates a laser beam having a wavelength of 193.3 to 193.5 nm as a laser beam having a wavelength of 200 nm or less.

  The invention according to claim 4 is a deep ultraviolet laser device that generates laser light having a wavelength of 200 nm or less from laser light having a wavelength of 1 μm band and laser light having a wavelength of 1.5 μm band. The first wavelength conversion means for generating the second harmonic of the laser light having the wavelength of 1 μm band, and the laser light having the wavelength of 1 μm band from the second harmonic generated by the first wavelength conversion means. The second wavelength converting means for generating the fourth harmonic, the fourth harmonic generated by the second wavelength converting means and the laser light having a wavelength of 1.5 μm are incident, and the wavelength is generated by sum frequency generation. Third wavelength conversion means for generating converted laser light, laser light generated by incidence of the laser light generated by the wavelength conversion means and the laser light having a wavelength of 1.5 μm band, and wavelength conversion by sum frequency generation Generate A deep ultraviolet laser apparatus having a fourth wavelength conversion means and generating a laser beam having a wavelength of 200 nm or less by the fourth wavelength conversion means, wherein the 1 μm band is 1027 to 1032 nm, and the 1.5 μm The band is 1541 to 1571 nm, and the fourth wavelength converting means generates a laser beam having a wavelength of 193.3 to 193.5 nm as a laser beam having a wavelength of 200 nm or less.

  Further, the invention according to claim 5 of the present invention is the invention according to any one of claims 3 or 4 of the present invention, wherein the first wavelength conversion means and the second wavelength conversion means. The third wavelength conversion unit and the fourth wavelength conversion unit are nonlinear optical crystals.

  According to a sixth aspect of the present invention, in the fifth aspect of the present invention, the nonlinear optical crystal is an LBO crystal, a CLBO crystal or a BBO crystal. .

  According to the present invention, there is an excellent effect that deep ultraviolet laser light having a wavelength of about 200 nm or less can be generated efficiently.

  In addition, according to the present invention, an excellent effect is achieved in that deep ultraviolet laser light having a wavelength of about 200 nm or less can be generated with high output.

  Furthermore, according to the present invention, there is an excellent effect that deep ultraviolet laser light having a wavelength of about 200 nm or less can be generated while cost reduction is achieved.

  Furthermore, according to the present invention, there is an excellent effect that deep ultraviolet laser light having a wavelength of about 200 nm or less can be generated while greatly improving the reliability.

  Hereinafter, an example of an embodiment of a deep ultraviolet laser device according to the present invention will be described in detail with reference to the accompanying drawings.

  In the following description and the accompanying drawings, the same or corresponding components are denoted by the same reference numerals, and overlapping descriptions of the configurations and functions are appropriately omitted.

FIG. 2 is a conceptual structural explanatory diagram of the deep ultraviolet laser apparatus 100 according to the first embodiment of the present invention.

  The deep ultraviolet laser device 100 includes a first semiconductor laser 102 that emits laser light having a wavelength of about 1 μm band, a second semiconductor laser 104 that emits laser light having a wavelength of about 1.4 to 1.5 μm, A pulse current source 106 for applying a pulse current for driving the first semiconductor laser 102 and the second semiconductor laser 104, and a first rare earth addition for amplifying a laser beam having a wavelength of about 1 μm band emitted from the first semiconductor laser 102 An optical fiber amplifier 108, a second rare earth-doped optical fiber amplifier 110 that amplifies laser light having a wavelength of about 1.4 to 1.5 μm emitted from the second semiconductor laser 104, and an emission side of the first rare earth-doped optical fiber amplifier 108 A first condenser lens 112 for condensing a laser beam having a wavelength of about 1 μm emitted from the end portion 108a, and a second rare earth A second condensing lens 114 that condenses laser light having a wavelength in the range of about 1.4 to 1.5 μm emitted from the exit-side end portion 110 a of the addition optical fiber amplifier 110 and the first condensing lens 112. In addition, a first nonlinear optical crystal 116 that emits a second harmonic wave by the generation of harmonics by entering a laser beam having a wavelength of about 1 μm band and a second harmonic wave emitted from the first nonlinear optical crystal 116 are incident. The second nonlinear optical crystal 118 that emits the fourth harmonic by the harmonic generation, the fourth harmonic emitted from the second nonlinear optical crystal 118, and about 1.4 to 1 emitted from the second condenser lens 114. A third nonlinear optical crystal 120 that emits a first sum frequency generation laser light by incidence of laser light having a wavelength of .5 μm band and generation of sum frequency, and first sum frequency generation emitted from the third nonlinear optical crystal 120 laser The light and the laser light having a wavelength of about 1.4 to 1.5 μm band transmitted through the third nonlinear optical crystal 120 without contributing to the sum frequency generation by the third nonlinear optical crystal 120 are incident to generate the first frequency. And a fourth nonlinear optical crystal 122 that emits deep ultraviolet laser light having a wavelength of about 200 nm or less as two-sum frequency generation laser light.

  The first rare-earth doped optical fiber amplifier 108 has an incident-side end connected to the emission end of the first semiconductor laser 102 and an emission-side end 108a disposed adjacent to the condenser lens 112. And an excitation laser group 108c that makes excitation light incident on the optical fiber 108b.

  On the other hand, the second rare earth-doped optical fiber amplifier 110 has an incident side end connected to the emission end of the second semiconductor laser 104 and an emission side end 110a adjacent to the condenser lens 114. And an excitation laser group 110c that makes excitation light incident on the optical fiber 110b.

  In the rare earth doped optical fiber amplifiers 108 and 110, the intensity of the laser light emitted from the optical fibers 108b and 110b is determined according to the output intensity of the excitation light incident on the optical fibers 108b and 110b doped with the rare earth. For this reason, in this embodiment, for the purpose of increasing the output intensity of the excitation light, the excitation laser groups 108c and 110c are each composed of three excitation lasers.

In the description of the “Best Mode for Carrying Out the Invention” section, in order to simplify the description and facilitate understanding of the present invention, a total reflection mirror for changing the optical path of the laser beam, etc. Although explanation and illustration of the optical system are omitted, it is needless to say that the optical path of the laser beam may be varied using an appropriate optical system. For example, in the first embodiment shown in FIG. 2 as well, for example, the fourth harmonic emitted from the second nonlinear optical crystal 118 and the about 1.4 to 1.5 μm band emitted from the condenser lens 114 are used. When a laser beam having a wavelength is incident on the third nonlinear optical crystal 120, the optical path of each laser beam is bent and incident as shown in FIG.

Here, the first semiconductor laser 102 can be composed of, for example, an InGaAs-based semiconductor laser, while the second semiconductor laser 104 is composed of, for example, a DFB laser (a DFB laser has a diffraction grating inside a laser chip). And a semiconductor laser that oscillates laser light by confining light in an active region by reflecting only light of a specific wavelength.

  The rare-earth doped optical fiber amplifier 108 can be constituted by, for example, an yttrium-doped fiber amplifier (YDFA) in which yttrium is added as a rare earth to an optical fiber. On the other hand, the second rare-earth doped optical fiber amplifier 110 can be configured by, for example, an erbium-doped fiber amplifier (EDFA) in which erbium is added to the optical fiber as a rare earth.

  In addition, the first nonlinear optical crystal 116 can be composed of, for example, an LBO crystal, and the second nonlinear optical crystal 118 can be composed of, for example, a CLBO crystal or a BBO crystal. 120 can be configured by, for example, a CLBO crystal or a BBO crystal, and the fourth nonlinear optical crystal 122 can be configured by, for example, a CLBO crystal, a BBO crystal, or the like.

  Note that wavelength conversion of a nonlinear optical crystal such as an LBO crystal, a CLBO crystal, or a BBO crystal that can be used as the first nonlinear optical crystal 116, the second nonlinear optical crystal 118, the third nonlinear optical crystal 120, or the fourth nonlinear optical crystal 122. The efficiency is about 50% in all cases.

In the above configuration, the operation of the above-described deep ultraviolet laser device 100 will be described. Generation of harmonics that generate laser light converted in wavelength by making laser light of a certain wavelength incident on the nonlinear optical crystal, Since the nonlinear optical effect such as sum frequency generation that generates laser light wavelength-converted by making two different laser beams incident on the nonlinear optical crystal is well known, detailed description thereof will be omitted.

  First, when a pulse current is applied to the first semiconductor laser 102 and the second semiconductor laser 104 from the pulse current source 106 and the first semiconductor laser 102 and the second semiconductor laser 104 are driven synchronously by current modulation, Laser light having a wavelength of about 1 μm band is emitted from the first semiconductor laser 102 and laser light having a wavelength of about 1.4 to 1.5 μm is emitted from the second semiconductor laser 104 in synchronization.

  Here, the laser light having a wavelength of about 1 μm emitted from the first semiconductor laser 102 is incident on the rare-earth-doped optical fiber amplifier 108, amplified while passing through the rare-earth-doped optical fiber amplifier 108, and is emitted on the emission-side end portion 108a. From about 1 μm wavelength is emitted with high output.

  Next, the laser light with a wavelength of about 1 μm emitted from the emission side end portion 108a is condensed by the condenser lens 112 and incident on the first nonlinear optical crystal 116, and the first nonlinear optical crystal is obtained. The laser light having a wavelength of about 1 μm that is incident on 116 is wavelength-converted to a second harmonic by generation of a harmonic that is a nonlinear optical effect of the first nonlinear optical crystal 116, and the first nonlinear optical crystal 116 transmits a second harmonic. A wave is emitted.

  Next, the second harmonic emitted from the first nonlinear optical crystal 116 is incident on the second nonlinear optical crystal 118, and the second harmonic incident on the second nonlinear optical crystal 118 is The second harmonic optical crystal 118 converts the wavelength to the fourth harmonic by the harmonic generation which is a nonlinear optical effect, and the fourth nonlinear optical crystal 118 emits the fourth harmonic.

  On the other hand, a laser beam having a wavelength of about 1.4 to 1.5 μm emitted from the second semiconductor laser 104 is incident on the second rare earth doped optical fiber amplifier 110 and passes through the second rare earth doped optical fiber amplifier 110. After being amplified, a laser beam having a wavelength of about 1.4 to 1.5 μm band is emitted from the emission side end portion 110a with a high output.

  Then, a fourth harmonic emitted from the second nonlinear optical crystal 118 and a laser beam having a wavelength of about 1.4 to 1.5 μm emitted from the emission side end portion 110a via the second condenser lens 114, Enters in synchronization with the third nonlinear optical crystal 120. In the third nonlinear optical crystal 120, the first sum that has been wavelength-converted by the sum frequency generation that is a nonlinear optical effect by the incident fourth harmonic and the laser light having a wavelength of about 1.4 to 1.5 μm band. A frequency generating laser beam is emitted.

  Further, the first sum frequency generation laser light emitted from the third nonlinear optical crystal 120 is incident on the fourth nonlinear optical crystal 122, and similarly contributes to wavelength conversion by the sum frequency generation in the third nonlinear optical crystal 120. Without passing through, the laser light having a wavelength of about 1.4 to 1.5 μm is also incident on the fourth nonlinear optical crystal 122. In the fourth nonlinear optical crystal 122, the wavelength was converted by the sum frequency generation which is a nonlinear optical effect by the incident first sum frequency generation laser light and the laser light having a wavelength of about 1.4 to 1.5 μm band. A deep ultraviolet laser beam having a wavelength of about 200 nm or less is emitted as the second sum frequency generation laser beam.

Therefore, according to the deep ultraviolet laser device 100, a pulse current is applied from the pulse current source 106 to the first semiconductor laser 102 and the second semiconductor laser 104, and the first semiconductor laser 102 and the second semiconductor laser 104 are made current. Since driving is performed by modulation, it is extremely easy to control the timing of incidence of laser light when generating the sum frequency in the third nonlinear optical crystal 120 or the fourth nonlinear optical crystal 122, and the generation efficiency of the sum frequency generation is improved. As a result, deep ultraviolet laser light having a wavelength of about 200 nm or less can be efficiently generated.

  Further, according to the deep ultraviolet laser device 100, the laser light emitted from the first semiconductor laser 102 and the laser light emitted from the second semiconductor laser 104 are amplified using the rare-earth doped optical fiber amplifiers 108 and 110, respectively. Therefore, deep ultraviolet laser light having a wavelength of about 200 nm or less can be generated with high output.

  Further, the deep ultraviolet laser device 100 can be configured using a semiconductor laser, a rare earth-doped optical fiber amplifier, or a nonlinear optical crystal such as an LBO crystal, a BBO crystal, or a CLBO crystal, which has been conventionally used. While achieving cost reduction, it is possible to generate deep ultraviolet laser light having a wavelength of about 200 nm or less.

  Furthermore, according to the deep ultraviolet laser device 100, the semiconductor laser, the rare earth-doped optical fiber amplifier, or the nonlinear optical crystal such as the LBO crystal, the BBO crystal, and the CLBO crystal, which are more stable than the conventional ones, are configured. Therefore, it is possible to generate deep ultraviolet laser light having a wavelength of about 200 nm or less while greatly improving reliability.

  In addition, since the deep ultraviolet laser device 100 controls the repetition frequency of the first semiconductor laser 102 and the second semiconductor laser 104 by current modulation, it is possible to generate a high repetition laser beam having a repetition frequency of 1 MHz or more. become.

Next, FIG. 3 shows a conceptual configuration explanatory diagram of a deep ultraviolet laser apparatus 200 according to the second embodiment of the present invention.

  The deep ultraviolet laser device 200 includes a solid-state laser 202 that emits laser light having a wavelength of about 1 μm band, and a half-wave plate 204 that emits laser light emitted from the solid-state laser 202 by changing the polarization of the laser light into linearly polarized light. The polarization beam splitter 206 that emits the linearly polarized laser light emitted from the half-wave plate 204 by separating it into two components, a P-polarized component and an S-polarized component, and one emitted from the polarized beam splitter 206 An optical parametric oscillator (OPO) 208 that converts the wavelength of laser light having a wavelength of about 1 μm into a laser light having a wavelength of about 1.4 to 1.5 μm and emits the laser light, and a polarizing beam splitter 206 A laser beam with a wavelength of about 1 μm of the other component emitted from the The first nonlinear optical crystal 116 that emits the second harmonic by wave generation and the second nonlinear that emits the fourth harmonic by the harmonic generation by entering the second harmonic emitted from the first nonlinear optical crystal 116 Sum frequency generation by incidence of the optical crystal 118, the fourth harmonic emitted from the second nonlinear optical crystal 118, and laser light having a wavelength of about 1.4 to 1.5 μm emitted from the optical parametric oscillator 208 The third nonlinear optical crystal 120 that emits the first sum frequency generation laser light by the above, and the first sum frequency generation laser light emitted from the third nonlinear optical crystal 120 and the third nonlinear optical crystal 120 do not contribute to the sum frequency generation The laser light having a wavelength of about 1.4 to 1.5 μm and transmitted through the third nonlinear optical crystal 120 is incident to generate a sum frequency, so that the second sum frequency generation laser light has a wavelength of about 2 0nm is constituted by a fourth non-linear optical crystal 122 for emitting the following deep ultraviolet laser beam.

  As the optical parametric oscillator 208, a conventionally known optical parametric oscillator may be used. For example, a laser resonator constituted by two mirrors 208a and 208b arranged to face each other, and this laser resonator may be used. Nonlinear optics such as periodically poled lithium niobate (Periodically-Poled Lithium Niobate, PPLN) or periodically poled lithium tantalate (Periodically-Poled Lithium Tantalate) disposed between the two mirrors 208a and 208b And a crystal 208c. Since a technique for wavelength conversion by optical parametric oscillation by an optical parametric oscillator is a known technique, detailed description thereof is omitted.

In the above configuration, the operation of the above-described deep ultraviolet laser device 200 will be described. First, laser light having a wavelength of about 1 μm band emitted from the solid-state laser 202 is incident on the half-wave plate 204. The laser light incident on the half-wave plate 204 is emitted from the half-wave plate 204 while the polarization is controlled to be linearly polarized by the half-wave plate 204.

  Then, the laser light emitted from the half-wave plate 204 is incident on the polarization beam splitter 206, and the P-polarized component of the laser light incident on the polarization beam splitter 206 is transmitted through the polarization beam splitter 206, and the polarization beam splitter. The S-polarized component of the laser light incident on 206 is reflected by the polarizing beam splitter 206, and the laser light emitted from the half-wave plate 204 is branched into two optical paths by the polarizing beam splitter 206. At this time, when the angle of the linearly polarized light with respect to the optical axis is changed by rotating the half-wave plate 204, the intensity of the P-polarized component and the S-polarized component in the laser light incident on the polarizing beam splitter 206 is changed. Thus, the intensity of the laser beam in each optical path branched into two optical paths by the polarization beam splitter 206 can be adjusted.

  Here, the P-polarized component of the laser beam having a wavelength of about 1 μm in one of the optical paths branched into two optical paths by the polarization beam splitter 206 is incident on the optical parametric oscillator 208, and the optical parametric oscillator 208 has a nonlinear optical effect. The wavelength is converted by a certain optical parametric oscillation, and laser light having a wavelength of about 1.4 to 1.5 μm is emitted from the optical parametric oscillator 208.

  On the other hand, the S-polarized component of the laser beam having a wavelength of about 1 μm in the other optical path branched into two optical paths by the polarization beam splitter 206 is incident on the first nonlinear optical crystal 116, and the first nonlinear optical crystal 116 is nonlinear. The wavelength is converted to the second harmonic by the harmonic generation which is an optical effect, and the second harmonic is emitted from the first nonlinear optical crystal 116. Next, the second harmonic emitted from the first nonlinear optical crystal 116 is incident on the second nonlinear optical crystal 118, and the second harmonic incident on the second nonlinear optical crystal 118 is The second harmonic optical crystal 118 converts the wavelength to the fourth harmonic by the harmonic generation which is a nonlinear optical effect, and the fourth nonlinear optical crystal 118 emits the fourth harmonic.

  The fourth harmonic emitted from the second nonlinear optical crystal 118 and the laser light having a wavelength of about 1.4 to 1.5 μm emitted from the optical parametric oscillator 208 are synchronized with the third nonlinear optical crystal 120. Will be incident. In the third nonlinear optical crystal 120, the first sum that has been wavelength-converted by the sum frequency generation that is a nonlinear optical effect by the incident fourth harmonic and the laser light having a wavelength of about 1.4 to 1.5 μm band. A frequency generating laser beam is emitted.

  Further, the first sum frequency generation laser light emitted from the third nonlinear optical crystal 120 is incident on the fourth nonlinear optical crystal 122, and similarly contributes to wavelength conversion by the sum frequency generation in the third nonlinear optical crystal 120. Without passing through, the laser light having a wavelength of about 1.4 to 1.5 μm is also incident on the fourth nonlinear optical crystal 122. In the fourth nonlinear optical crystal 122, the wavelength was converted by the sum frequency generation which is a nonlinear optical effect by the incident first sum frequency generation laser light and the laser light having a wavelength of about 1.4 to 1.5 μm band. A deep ultraviolet laser beam having a wavelength of about 200 nm or less is emitted as the second sum frequency generation laser beam.

  In this deep ultraviolet laser device 200, a laser beam having a wavelength of about 1.4 to 1.5 μm is obtained by using the optical parametric oscillator 208. Thus, the laser beam of about 1.4 to 1.5 μm is obtained. When the optical parametric oscillator 208 is used to generate laser light having a wavelength, the sum frequency is generated compared to the case where a solid laser is used to generate laser light having a wavelength of about 1.4 to 1.5 μm. It becomes easy to control the timing.

Next, FIG. 4 shows an explanatory diagram of a conceptual configuration of a deep ultraviolet laser apparatus 300 according to the third embodiment of the present invention.

  This deep ultraviolet laser device 300 includes a solid-state laser 302 that emits a pulse laser beam having a wavelength of about 1 μm as a pump wave, and a continuous laser beam (about 1 μm band) having a wavelength of about 1.4 to 1.5 μm as a signal wave. A solid-state laser that emits a laser beam that is longer than a pulse laser beam having a wavelength of approximately 1 μm and can be regarded as a substantially continuous laser beam when viewed from a pulse laser beam having a wavelength of about 1 μm band. 304, a beam splitter 306 that branches the pulse laser beam emitted from the solid-state laser 302 into two optical paths, and a pulse laser beam having a wavelength of about 1 μm band in one of the optical paths branched by the beam splitter 306, and is solid. A first mirror that reflects continuous laser light having a wavelength of about 1.4 to 1.5 μm emitted from the laser 304. 308, a pulsed laser beam having a wavelength of about 1 μm band transmitted through the first mirror 308, and a continuous laser beam having a wavelength of about 1.4 to 1.5 μm reflected by the first mirror 308 are incident to be about 1 An optical parametric amplifier (OPA) 310 that amplifies and emits a laser beam having a wavelength of 4 to 1.5 μm and a pulse laser having a wavelength of about 1 μm in the other optical path branched by the beam splitter 306. A first nonlinear optical crystal 116 that emits light and emits a second harmonic by harmonic generation, and a second harmonic that emerges from the first nonlinear optical crystal 116 that is emitted from the first nonlinear optical crystal 116 and generates a fourth harmonic. The second nonlinear optical crystal 118 that emits light and the fourth harmonic emitted from the second nonlinear optical crystal 118 and light Reflected by the second mirror 312 that reflects the laser light having a wavelength of about 1.4 to 1.5 μm emitted from the lametric amplifier 310, the fourth harmonic transmitted through the second mirror 312, and the second mirror 312. The third nonlinear optical crystal 120 that emits the first sum frequency generation laser light by sum frequency generation upon incidence of laser light having a wavelength of about 1.4 to 1.5 μm band, and is emitted from the third nonlinear optical crystal 120. The first sum frequency generation laser light and the laser light having a wavelength of about 1.4 to 1.5 μm transmitted through the third nonlinear optical crystal 120 without contributing to the sum frequency generation by the third nonlinear optical crystal 120 are incident. The fourth nonlinear optical crystal 122 that emits deep ultraviolet laser light having a wavelength of about 200 nm or less as the second sum frequency generation laser light by the generation of the sum frequency is configured.

In the above configuration, the operation of the above-described deep ultraviolet laser device 300 will be described. First, laser light having a wavelength of about 1 μm band emitted from the solid-state laser 302 is incident on the beam splitter 306 and branched into two optical paths. The

  The pulse laser beam having a wavelength of about 1 μm band in one optical path branched by the beam splitter 306 passes through the first mirror 308 together with the continuous laser beam having a wavelength of about 1.4 to 1.5 μm band emitted from the solid-state laser 304. Is incident on the optical parametric amplifier 310, and the optical parametric amplifier 310 amplifies the laser light having a wavelength of about 1.4 to 1.5 μm, and the optical parametric amplifier 310 has a wavelength of about 1.4 to 1.5 μm. Laser beam is emitted.

  On the other hand, a pulse laser beam having a wavelength of about 1 μm in the other optical path branched by the beam splitter 306 is incident on the first nonlinear optical crystal 116 and is generated by harmonic generation which is a nonlinear optical effect of the first nonlinear optical crystal 116. The wavelength is converted to the second harmonic, and the second harmonic is emitted from the first nonlinear optical crystal 116. Next, the second harmonic emitted from the first nonlinear optical crystal 116 is incident on the second nonlinear optical crystal 118, and the second harmonic incident on the second nonlinear optical crystal 118 is The second harmonic optical crystal 118 converts the wavelength to the fourth harmonic by the harmonic generation which is a nonlinear optical effect, and the fourth nonlinear optical crystal 118 emits the fourth harmonic.

  Then, the fourth harmonic emitted from the second nonlinear optical crystal 118 and the laser light having a wavelength of about 1.4 to 1.5 μm emitted from the optical parametric amplifier 310 pass through the second mirror 312 through the second mirror 312. 3 is incident on the nonlinear optical crystal 120 in synchronization. In the third nonlinear optical crystal 120, the first sum that has been wavelength-converted by the sum frequency generation that is a nonlinear optical effect by the incident fourth harmonic and the laser light having a wavelength of about 1.4 to 1.5 μm band. A frequency generating laser beam is emitted.

  Further, the first sum frequency generation laser light emitted from the third nonlinear optical crystal 120 is incident on the fourth nonlinear optical crystal 122, and similarly contributes to wavelength conversion by the sum frequency generation in the third nonlinear optical crystal 120. Without passing through, the laser light having a wavelength of about 1.4 to 1.5 μm is also incident on the fourth nonlinear optical crystal 122. In the fourth nonlinear optical crystal 122, the wavelength was converted by the sum frequency generation which is a nonlinear optical effect by the incident first sum frequency generation laser light and the laser light having a wavelength of about 1.4 to 1.5 μm band. A deep ultraviolet laser beam having a wavelength of about 200 nm or less is emitted as the second sum frequency generation laser beam.

  In this deep ultraviolet laser device 300, an optical parametric amplifier 310 is used to obtain a laser beam having a wavelength of about 1.4 to 1.5 μm. When the optical parametric amplifier 310 is used to generate laser light of a wavelength, it becomes easy to control the timing when generating the sum frequency.

Next, FIG. 5 shows a conceptual configuration explanatory diagram of a main part of a deep ultraviolet laser apparatus 400 according to the fourth embodiment of the present invention.

  The deep ultraviolet laser device 400 includes a first nonlinear optical crystal 116 that emits a second harmonic wave by generating a harmonic wave upon entering a laser beam having a wavelength of about 1 μm band, and a first nonlinear optical crystal 116 that is emitted from the first nonlinear optical crystal 116. It has a second nonlinear optical crystal 118 that emits a second harmonic and emits a fourth harmonic by generating a harmonic, and an optical parametric oscillator 402.

  The optical parametric oscillator 402 is arranged between a laser resonator constituted by two mirrors 402a and 402b arranged opposite to each other, and two mirrors 402a and 402b constituting the laser resonator, respectively. The wavelength emitted from the nonlinear optical crystal 402c, the third nonlinear optical crystal 120, the fourth nonlinear optical crystal 122, and the fourth nonlinear optical crystal 122 such as periodically poled lithium niobate or periodically poled lithium tantalate is about 200 nm. It has a mirror 402d that transmits the following deep ultraviolet laser light but reflects light of other wavelengths.

In the above configuration, the laser light having a wavelength of about 1 μm is incident on the first nonlinear optical crystal 116 and is wavelength-converted to the second harmonic by the harmonic generation that is the nonlinear optical effect of the first nonlinear optical crystal 116. A second harmonic is emitted from the first nonlinear optical crystal 116. Next, the second harmonic emitted from the first nonlinear optical crystal 116 is incident on the second nonlinear optical crystal 118, and the second harmonic incident on the second nonlinear optical crystal 118 is The wavelength is converted into the fourth harmonic by the harmonic generation which is the nonlinear optical effect of the two nonlinear optical crystal 118, passes through the mirror 402 b, and enters the optical parametric oscillator 402.

  On the other hand, the component that has passed through the first nonlinear optical crystal 116 without being wavelength-converted in the laser light having a wavelength of about 1 μm band incident on the first nonlinear optical crystal 116 is transmitted through the mirror 402a and is transmitted through the optical parametric oscillator 402. Is incident on the inside.

  Then, in the optical parametric oscillator 402, sum frequency generation is performed by the third nonlinear optical crystal 120 and the fourth nonlinear optical crystal 122 using the incident laser light having a wavelength of about 1 μm band and its fourth harmonic. Then, a deep ultraviolet laser beam having a wavelength of about 200 nm or less is emitted from the mirror 402d as the second sum frequency generation laser beam.

Next, FIG. 6 shows a conceptual configuration explanatory diagram of a main part of a deep ultraviolet laser device 500 according to the fifth embodiment of the present invention.

  The deep ultraviolet laser device 500 includes a first nonlinear optical crystal 116 that emits laser light having a wavelength of about 1 μm and emits a second harmonic by generating a harmonic, and a first nonlinear optical crystal 116 that is emitted from the first nonlinear optical crystal 116. It has a second nonlinear optical crystal 118 that emits a second harmonic and emits a fourth harmonic by generating a harmonic, and an optical parametric oscillator 502.

  The optical parametric oscillator 502 includes a laser resonator configured to form an optical path intersecting in an X shape by four mirrors 502a, 502b, 502c, and 502d, and two mirrors 502a that constitute the laser resonator. , 502b, a non-linear optical crystal 502e such as periodically poled lithium niobate or periodically poled lithium tantalate, and two mirrors 502c and 502d constituting a laser resonator, respectively. The third nonlinear optical crystal 120 and the fourth nonlinear optical crystal 122 are included.

In the above configuration, the laser light having a wavelength of about 1 μm is incident on the first nonlinear optical crystal 116 and is wavelength-converted to the second harmonic by the harmonic generation that is the nonlinear optical effect of the first nonlinear optical crystal 116. A second harmonic is emitted from the first nonlinear optical crystal 116. Next, the second harmonic emitted from the first nonlinear optical crystal 116 is incident on the second nonlinear optical crystal 118, and the second harmonic incident on the second nonlinear optical crystal 118 is The wavelength is converted into the fourth harmonic by the harmonic generation that is the nonlinear optical effect of the two nonlinear optical crystal 118, passes through the mirror 502 c, and enters the optical parametric oscillator 502.

  On the other hand, the component that is transmitted through the first nonlinear optical crystal 116 without being wavelength-converted in the laser light having a wavelength of about 1 μm band incident on the first nonlinear optical crystal 116 is transmitted through the mirror 502 a and is transmitted through the optical parametric oscillator 502. Is incident on the inside.

  In the optical parametric oscillator 502, the third nonlinear optical crystal 120 and the fourth nonlinear optical crystal 122 generate sum frequency using the incident laser light having a wavelength of about 1 μm band and the fourth harmonic. Then, a deep ultraviolet laser beam having a wavelength of about 200 nm or less is emitted from the mirror 502d as the second sum frequency generation laser beam.

Here, as a light source for generating a laser beam having a wavelength of about 1 μm band or a laser beam having a wavelength of about 1.4 to 1.5 μm, for example, a combination as shown below can be appropriately used. . Of course, the configuration of each combination shown below may be changed as appropriate.

(1) When generating a deep ultraviolet laser beam having a wavelength of about 193.3 to 193.5 nm as a deep ultraviolet laser beam having a wavelength of about 200 nm or less In this case, the wavelength of about 1 μm band is about 1063 to 1065 nm, The wavelength in the band of about 1.4 to 1.5 μm is about 1410 to 1424 nm.

a. Laser light having a wavelength of about 1063 to 1065 nm is generated using an Nd: YAG laser, Nd: YVO ₄ laser or a current-modulated semiconductor laser, and laser light having a wavelength of about 1410 to 1424 nm is generated using an optical parametric transmitter ( For example, it can be applied to the second embodiment, the fourth embodiment, and the fifth embodiment.)

(2) When generating a deep ultraviolet laser beam having a wavelength of about 193.3 to 193.5 nm as a deep ultraviolet laser beam having a wavelength of about 200 nm or less In this case, the wavelength of about 1 μm band is about 1027 to 1032 nm, The wavelength in the band of about 1.4 to 1.5 μm is about 1541 to 1571 nm.

      a. Laser light having a wavelength of about 1027 to 1032 nm is generated using an Nd: YAG laser, and laser light having a wavelength of about 1541 to 1571 nm is generated by amplifying the semiconductor laser light using an optical parametric amplifier (for example, the third embodiment) It can be applied to the form of

      b. Laser light having a wavelength of about 1027 to 1032 nm is generated using a current-modulated semiconductor laser, and laser light having a wavelength of about 1541 to 1571 nm is generated using a current-modulated semiconductor laser (for example, applied to the first embodiment) can do.).

      c. Laser light having a wavelength of about 1027 to 1032 nm is generated using a current-modulated semiconductor laser, and laser light having a wavelength of about 1541 to 1571 nm is generated by amplifying the semiconductor laser light using an optical parametric amplifier (for example, a third laser beam) It can be applied to the embodiment.)

      d. Laser light having a wavelength of about 1027 to 1032 nm is generated using an Nd: YAG laser or a current-modulated semiconductor laser, and laser light having a wavelength of about 1541 to 1571 nm is generated using an optical parametric transmitter (for example, in the second embodiment). This can be applied to the embodiment, the fourth embodiment, and the fifth embodiment.)

In the above (1) and (2), when a laser beam having a predetermined wavelength is generated using a current-modulated semiconductor laser, as shown in the first embodiment, a rare-earth doped optical fiber amplifier, etc. It is preferable that the output intensity is improved by using an optical fiber amplifier.

In the above-described embodiment, the first nonlinear optical crystal 116, the second nonlinear optical crystal 118, the third nonlinear optical crystal 120, and the fourth nonlinear optical crystal 122 are appropriately selected from LBO crystals, CLBO crystals, BBO crystals, and the like. However, CLBO crystals have high wavelength conversion efficiency but poor stability, while BBO crystals have low wavelength conversion efficiency but excellent stability. Therefore, it may be selected appropriately based on these characteristics.

  That is, the BBO crystal is said to have high conversion efficiency, and the phase matching of the sum frequency generation has a wide range of selection. For example, the generation of about 193.4 nm is possible by the sum frequency generation of about 266 nm and about 707 nm. However, the fundamental absorption edge of the material is about 190 nm, and there is considerable absorption at about 193.4 nm. As a result, the conversion efficiency does not increase, and there is a problem in reliability.

  On the other hand, the CLBO crystal has a shorter fundamental absorption edge than that of the BBO crystal and is excellent in reliability when used at a short wavelength. However, the birefringence and dispersion are small. Generation of the sum frequency of about 707 nm cannot achieve phase matching. In general, the sum frequency generation is easier to achieve phase matching when the two input wavelengths are separated from each other. The generation of about 224 nm due to the sum frequency generation of about 266 nm and about 1415 nm, or the generation of the sum frequency of about 224 nm and about 1415 nm. About 193.4 nm can also be phase matched.

As described above, according to the deep ultraviolet laser devices 100, 200, 300, 400, and 500, the incident timing of the laser light when generating the sum frequency in the third nonlinear optical crystal 120 or the fourth nonlinear optical crystal 122. It is extremely easy to control, and it is possible to improve the generation efficiency of sum frequency generation. As a result, deep ultraviolet laser light having a wavelength of about 200 nm or less can be efficiently generated.

  Further, according to the deep ultraviolet laser devices 100, 200, 300, 400, and 500, deep ultraviolet laser light having a wavelength of about 200 nm or less can be generated with high output.

  Further, according to the deep ultraviolet laser apparatus 100, 200, 300, 400, 500, conventionally used semiconductor lasers, solid state lasers, rare earth doped optical fiber amplifiers, optical parametric oscillators, optical parametric amplifiers or LBO crystals, BBO Since a non-linear optical crystal such as a crystal or a CLBO crystal can be used, a deep ultraviolet laser beam having a wavelength of about 200 nm or less can be generated while reducing the cost.

  Furthermore, according to the deep ultraviolet laser devices 100, 200, 300, 400, and 500, semiconductor lasers, solid-state lasers, rare earth-doped optical fiber amplifiers, optical parametric oscillators, and optical parametric amplifiers exhibiting more stable performance than before. Or since it can comprise using nonlinear optical crystals, such as a LBO crystal, a BBO crystal, and a CLBO crystal, the deep ultraviolet laser beam whose wavelength is about 200 nm or less can be generated, improving reliability significantly.

In addition, each wavelength shown above shall show the wavelength in either a vacuum or air.

  The present invention can be used for microfabrication and inspection of a fine structure in the field of electronic industry.

FIG. 1 is an explanatory diagram showing the principle of the present invention. FIG. 2 is a conceptual structural explanatory diagram of the deep ultraviolet laser device according to the first embodiment of the present invention. FIG. 3 is an explanatory diagram of a conceptual configuration of a deep ultraviolet laser apparatus according to the second embodiment of the present invention. FIG. 4 is a conceptual structural explanatory diagram of a deep ultraviolet laser device according to the third embodiment of the present invention. FIG. 5 is an explanatory diagram of a conceptual configuration of a main part of a deep ultraviolet laser apparatus according to the fourth embodiment of the present invention. FIG. 6 is an explanatory diagram of a conceptual configuration of a main part of a deep ultraviolet laser apparatus according to the fifth embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Deep ultraviolet laser apparatus 102 1st semiconductor laser 104 2nd semiconductor laser 106 Pulse current source 108 1st rare earth addition optical fiber amplifier 108a Output side edge part 108b Optical fiber 108c Excitation laser group 110 2nd rare earth addition optical fiber amplifier 110a Output side edge part 110b Optical fiber 110c Excitation laser group 112 First condenser lens 114 Second condenser lens 116 First nonlinear optical crystal 118 Second nonlinear optical crystal 120 Third nonlinear optical crystal 122 Fourth nonlinear optical crystal 200 Deep ultraviolet laser apparatus 202 Solid laser 204 Half-wave plate 206 Polarizing beam splitter 208 Optical parametric oscillator 208a Mirror 208b Mirror 208c Nonlinear optical crystal 300 Deep ultraviolet laser device 302 Solid laser 304 solid-state laser 306 beam splitter 308 first mirror 310 optical parametric amplifier 312 second mirror 400 deep ultraviolet laser device 402 optical parametric oscillator 402a mirror 402b mirror 402c nonlinear optical crystal 402d mirror 500 deep ultraviolet laser device 502 optical parametric oscillator 502a mirror 502b mirror 502c mirror 502d mirror 502e nonlinear optical crystal

Claims (6)

A fourth harmonic of a laser beam having a wavelength of 1 μm band is generated, a laser beam is generated by generating a sum frequency of the fourth harmonic and a laser beam having a wavelength of 1.4 μm band, and generated by the generation of the sum frequency. In a method for generating deep ultraviolet laser light, which generates laser light having a wavelength of 200 nm or less by generating a sum frequency of laser light and laser light having a wavelength of 1.4 μm band,
The 1 μm band is 1063 to 1065 nm, the 1.4 μm band is 1410 to 1424 nm, and a laser beam having a wavelength of 193.3 to 193.5 nm is generated as a laser beam having a wavelength of 200 nm or less. A method of generating deep ultraviolet laser light. A fourth harmonic of a laser beam having a wavelength of 1 μm band is generated, a laser beam is generated by generating a sum frequency of the fourth harmonic and a laser beam having a wavelength of 1.5 μm band, and generated by the generation of the sum frequency. In a method for generating deep ultraviolet laser light, which generates laser light having a wavelength of 200 nm or less by generating a sum frequency of laser light and laser light having a wavelength of 1.5 μm band,
The 1 μm band is 1027 to 1032 nm, the 1.5 μm band is 1541 to 1571 nm, and a laser beam having a wavelength of 193.3 to 193.5 nm is generated as a laser beam having a wavelength of 200 nm or less. A method of generating deep ultraviolet laser light. A deep ultraviolet laser device that generates laser light having a wavelength of 200 nm or less from laser light having a wavelength of 1 μm band and laser light having a wavelength of 1.4 μm band,
First wavelength converting means for generating a second harmonic of laser light having a wavelength of 1 μm band;
Second wavelength conversion means for generating a fourth harmonic of the laser light having a wavelength in the 1 μm band from the second harmonic generated by the first wavelength conversion means;
A third wavelength converting means for generating a laser beam wavelength-converted by sum frequency generation by entering the fourth harmonic generated by the second wavelength converting means and a laser light having a wavelength of 1.4 μm band;
A fourth wavelength converting means for generating a laser light having a wavelength converted by sum frequency generation by making the laser light generated by the wavelength converting means and the laser light having a wavelength of the 1.4 μm band incident; In the deep ultraviolet laser device that generates laser light having a wavelength of 200 nm or less by the fourth wavelength conversion means,
The 1 μm band is 1063 to 1065 nm, the 1.4 μm band is 1410 to 1424 nm, and the fourth wavelength converting means has a wavelength of 193.3 to 193.5 nm as a laser beam having a wavelength of 200 nm or less. A deep ultraviolet laser device that generates laser light. A deep ultraviolet laser device that generates laser light having a wavelength of 200 nm or less from laser light having a wavelength of 1 μm band and laser light having a wavelength of 1.5 μm band,
First wavelength converting means for generating a second harmonic of laser light having a wavelength of 1 μm band;
Second wavelength conversion means for generating a fourth harmonic of the laser light having a wavelength in the 1 μm band from the second harmonic generated by the first wavelength conversion means;
A third wavelength converting means for generating a laser beam wavelength-converted by sum frequency generation by making the fourth harmonic wave generated by the second wavelength converting means and a laser beam having a wavelength of 1.5 μm band incident;
A fourth wavelength converting means for generating a laser light having a wavelength converted by sum frequency generation by making the laser light generated by the wavelength converting means and the laser light having a wavelength of 1.5 μm band incident thereon, and In the deep ultraviolet laser device that generates laser light having a wavelength of 200 nm or less by the fourth wavelength conversion means,
The 1 μm band is 1027 to 1032 nm, the 1.5 μm band is 1541 to 1571 nm, and the fourth wavelength converting means has a wavelength of 193.3 to 193.5 nm as a laser beam having a wavelength of 200 nm or less. A deep ultraviolet laser device that generates laser light. In the deep ultraviolet laser device according to any one of claims 3 and 4,
The deep ultraviolet laser device, wherein the first wavelength conversion unit, the second wavelength conversion unit, the third wavelength conversion unit, and the fourth wavelength conversion unit are nonlinear optical crystals. In the deep ultraviolet laser device according to claim 5,
The non-linear optical crystal is a LBO crystal, a CLBO crystal, or a BBO crystal.

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