JP2007081424A - Semiconductor device with trench structure and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve properties of a gate oxide film formed on trench inner walls, in a MOS gate power device etc. having a trench MOS gate structure. <P>SOLUTION: Trenches are formed in a principal plane of a semiconductor substrate, at least an insulating layer is formed on inner surfaces of the trenches, and an electric conductive film is formed on the principal plane of a semiconductor substrate including the interior of the trenches. Furthermore, nitrogen is injected into the electric conductive film, and the semiconductor device having trench structures is formed, on which the electric conductive film is patterned corresponding to the trench. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor device using a trench structure as a MOS gate and a manufacturing method thereof. More particularly, the present invention relates to a semiconductor device with improved characteristics of a gate oxide film formed on an inner wall of a trench and a method for manufacturing the same.

  FIG. 16 is a diagram for explaining the structure of a conventional power device (for example, IGBT: insulated gate bipolar transistor) using a trench as a MOS gate. 16A is a conceptual diagram showing the arrangement of the trenches, FIG. 16B is a cross-sectional view of the power device along the longitudinal direction of the trenches along the line AA ′ in FIG. 16A, and FIG. ) Is a cross-sectional view of the power device along a vertical line crossing the trench along line BB ′ in FIG.

In the figure, 1 is an n− type diffusion layer, 2 is an n type diffusion layer, 3 is a p ⁺ type high concentration diffusion layer, 4 is a p type base layer, 5 is an n ⁺ type emitter diffusion layer, 7 is a trench, 11 is A gate oxide film, 12 is a gate, 15 is a silicon oxide film, 16 and 17 are interlayer films, 18 is a p ⁺ region, 19 is a silicide layer, 20 is a barrier metal, and 21 is aluminum.
In such a conventional trench MOS gate structure, as shown in FIG. 16C, the surface of the gate 12 is located below the surface of the silicon substrate, in other words, below the trench opening surface.

  FIG. 17 shows a conventional planar MOS gate structure for comparison. Since the same reference numerals as those in FIG. 16 indicate the same or corresponding parts, detailed description thereof is omitted.

18 to 20 are views showing a manufacturing process of a conventional power device (IGBT: insulated gate bipolar transistor) using a trench as a MOS gate.
The manufacturing method will be described. First, as shown in FIG. 18A, an n + region 2 and a p ⁺ region 3 are formed on the lower surface of the n ⁻ type region 1 of a semiconductor substrate 30 such as silicon, and a p type impurity is formed on the upper surface. Region 4 is formed. Further, an n-type high impurity concentration region 5 is selectively formed thereon. Thereafter, a trench 7 penetrating the p-type region 4 and the n-type region 5 is formed. Thereafter, the inner surface and the opening of the trench 7 are smoothed.

  Next, as shown in FIG. 18B, a silicon oxide film 11 is formed from the inside of the trench 7 to the surface of the substrate 30. This silicon oxide film 11 becomes a gate oxide film.

Next, as shown in FIG. 18C, a low-resistance polycrystalline silicon film is formed as the gate electrode material 12 on the entire surface of the substrate 30, and the trench 7 is also filled.
Next, as shown in FIG. 18D, the gate electrode material 12 is patterned to form the gate 12 inside the trench 7.
Next, as shown in FIG. 19A, a silicon oxide film 15 is formed on the gate 12.

Next, as shown in FIG. 19B, CVD films 16 and 17 are formed on the entire surface of the substrate 30 as interlayer insulating films.
Next, as shown in FIG. 19C, the oxide films 16 and 17 are shaped by etching to form a trench MOS gate.

  Next, as shown in FIG. 20, a silicide layer 19, a barrier metal 20, and aluminum 21 are formed by sputtering, lamp annealing, or the like. In addition, the electrode 22 is formed. In this way, an IGBT having a trench structure is completed.

  In the conventional device structure as shown in FIG. 16 manufactured as described above, a convex portion appears in the Si / SiO2 interface shape in the trench opening portion in the region C shown in the cross-sectional view of FIG. . In addition, the gate oxide film 11 is thinned in the regions C and D shown in the drawing, which causes deterioration of the oxide film characteristics and reliability of the gate oxide film 11 formed on the inner wall of the trench 7.

18B, when the gate oxide film 11 is formed, since the n ⁺ emitter layer 5 and the p base layer 4 are formed on the side surface of the trench 7, the gate oxide film 11 is formed. The dopant in the diffusion layer diffused, deteriorating the gate oxide film characteristics and reliability.

  The present invention was made to solve these problems, and in a semiconductor device such as a power device using a trench as a MOS gate, a device structure that improves the characteristics of an insulating film such as a gate oxide film formed on the inner wall of the trench And it aims at obtaining the manufacturing method.

  A semiconductor device having a trench structure according to the present invention includes a trench formed on a main surface of a semiconductor substrate, an insulating film formed on at least the inner surface of the trench, and at least nitrogen is implanted inside the trench. And a conductive portion.

  The method for manufacturing a semiconductor device having a trench structure according to the present invention includes a step of forming a trench in a main surface of a semiconductor substrate, a step of forming an insulating film on at least the inner surface of the trench, and the inside of the trench. The method includes a step of forming a conductive film on a main surface of the semiconductor substrate and injecting nitrogen into the conductive film, and a step of patterning the conductive film corresponding to the trench.

According to the present invention, in the semiconductor device having a trench structure and the manufacturing method thereof, since nitrogen is implanted into the conductive film inside the trench, impurity diffusion from the substrate side to the insulating film (gate oxide film) is suppressed, There is an effect of reducing deterioration of the characteristics of the insulating film (gate oxide film). This also has the effect of improving the characteristics of the trench MOS transistor.
Other features and effects of the present invention will become apparent from the following description.

Embodiment 1 FIG. (Reference example)
1 to 6 are diagrams for explaining a manufacturing method and a structure of a semiconductor device having a trench structure according to the first embodiment of the present invention. Hereinafter, an IGBT having a trench MOS gate structure will be described as an example of the semiconductor device.
First, the manufacturing method will be described, and the structure will be described later.

  FIG. 1A to FIG. 6B are diagrams for each manufacturing process in the cross section of the trench, and the cross section taken along line BB ′ in the plan view of the trench in FIG. It corresponds to a surface. Because of the restriction that a different figure number must be assigned to each page of the drawing, FIG. 1 (d) follows FIG. 2 (a), FIG. 2 (d) follows FIG. 3 (a), and FIG. FIG. 4D shows a series of steps following FIG. 4A, FIG. 4D follows FIG. 5A, and FIG. 5B shows a series of steps following FIG. 6A.

First, in the semiconductor substrate 30 shown in FIG. 1A, 1 is an n ⁻ type low concentration diffusion layer (concentration: 1 × 10 ¹² to 1 × 10 ¹⁴ cm ⁻³ , depth: 40 to 600 μm), 2 is n Type diffusion layer (peak concentration: 1 × 10 ¹⁸ cm ⁻³ or less, diffusion depth: p ⁺ type high concentration diffusion layer 3 or more and 400 μm or less), 3 is p ⁺ type high concentration diffusion layer (surface concentration: surface concentration: 2 × 10 ¹⁸ cm ⁻³ or more, diffusion depth: 1 μm or more and less than the diffusion depth of the n-type diffusion layer 2). Here, the diffusion layers 1, 2, and 3 may be formed by implantation or diffusion, or may be formed by epitaxial growth.

Next, as shown in FIG. 1B, the p-type base layer 4 is diffused into the substrate surface (n ⁻ type low concentration diffusion layer 1) (peak concentration: 1 × 10 ¹⁵ to 1 × 10 ¹⁸ cm). ⁻³ , diffusion depth: 1 to 4 μm, which is shallower than the depth of the trench 7 to be formed later).
Next, as shown in FIG. 1C, an n ⁺ -type emitter diffusion layer 5 (surface concentration: 1 × 10 ^{18 to} 5 × 10 ²⁰ cm ⁻³ , diffusion depth: 0.3 to 2 μm) is formed. . In addition, the code | symbol of the semiconductor substrate 30 is abbreviate | omitted after FIG.1 (c) for simplification.

Next, as shown in FIG. 1D, the CVD film 6 is deposited and patterned to open a position where the trench 7 is formed.
Next, as shown in FIG. 2A, the semiconductor substrate is etched using the oxide film 6 as a mask to form a trench 7.

Next, post-processing after trench etching is performed to improve the characteristics of the trench MOS gate.
For this purpose, first, as shown in FIG. 2B, a portion of the oxide film 6 near the opening of the trench 7 is selectively removed, and the oxide film 6 is retreated from the trench 7 by a distance x.
Next, as shown in FIG. 2C, isotropic plasma etching of silicon is performed. As a result, the opening 8 of the trench 7 is chamfered, and the bottom 9 is rounded to eliminate the angular portion.

Next, as shown in FIG. 2D, an oxide film 10 (sacrificial oxide film) is formed.
Next, as shown in FIG. 3A, the oxide film 10 is removed.
Through these steps, the trench opening 8 and the bottom 9 are rounded and the inner wall of the trench is smoothed.

Next, as shown in FIG. 3B, a silicon oxide film 11 (first insulating film) is formed on the entire surface from the inner wall of the trench 7 to the outer surface of the trench. This becomes the gate oxide film of the trench.
Next, as shown in FIG. 3C, a first gate electrode material 12 (first conductive film) (for example, poly-Si containing high-concentration phosphorus) is embedded in the trench 7.
Next, as shown in FIG. 3D, etching is performed to etch the first gate electrode material 12 to a position lower than the silicon substrate surface. That is, etching is performed to a position lower than the outer surface of the trench opening.

Thereafter, as shown in FIG. 4A, the CVD film 13 (second insulating film) is deposited.
Next, as shown in FIG. 4B, the CVD film 13 is patterned and opened, and the first gate electrode material 12 in the trench 7 is left while leaving the CVD film 13 on the silicon oxide film 11. To expose the surface.
Next, as shown in FIG. 4C, a second gate electrode material 14 (second conductive film) is formed, and contact is made with the first gate electrode material 12 inside the trench 7.

Next, as shown in FIG. 4D, the second gate electrode material 14 is patterned.
Here, the same material is used for the first gate electrode material 12 and the second gate electrode material 14. Before the second gate electrode material 14 is deposited, a silicide layer (TiSi, CoSi, etc.) is formed on the surface of the first gate electrode material 12 at the stage of FIG. 4B in order to reduce the gate resistance. ) May be formed.

Next, as shown in FIG. 5A, a resist 14a is applied to the second gate electrode material 14, the CVD film 13 is patterned and etched, and then a p ⁺ type region 18 is formed by ion implantation. .
Next, as shown in FIG. 5B, the surface of the second gate electrode material 14 is oxidized to form an oxide film 15, and interlayer films 16 and 17 (for example, silicate glass containing CVD film, boron, phosphorus, etc.) ).

Thereafter, contact patterning is performed as shown in FIG.
Next, as shown in FIG. 6B, the silicide layer 19, the barrier metal 20, and the aluminum 21 are formed by sputtering, lamp annealing, or the like. In addition, the electrode 22 is formed. Thus, an IGBT having a trench MOS gate structure is completed.

As described above, as an example of the semiconductor device of this embodiment, an IGBT having a trench MOS gate structure is shown by the cross-sectional view of the cross section of FIG.
This structure is summarized as follows. That is, the semiconductor device of this embodiment includes a trench 7 formed in the main surface of the semiconductor substrate 30, and extends from the inner surface of the trench 7 to the outer surface along the main surface of the semiconductor substrate 30. Gate insulating films 11 and 13 are formed thick from the opening to the outer surface of the trench. Furthermore, gates (conductive portions) 12 and 14 having a shape extending from the inside of the trench 7 to the outer surface and narrowed down at the opening of the trench 7 are provided.

  Moreover, it can also be paraphrased as follows. That is, the semiconductor device of this embodiment includes a trench 7 formed on the main surface of the semiconductor substrate 30 and a first extending from the inner surface of the trench 7 to the outer surface along the main surface of the semiconductor substrate 30. An insulating film 11 is provided. In addition, the first conductive portion 12 filled to a position lower than the opening surface of the trench 7 is provided inside the trench 7. In addition, a second insulating film 13 is formed on the first insulating film 11 so as to extend from the peripheral portion of the first conductive portion 12 in the trench 7 to the outer surface. Further, a second conductive portion 14 is formed between the second insulating films 13 and connected to the lower first conductive portion 12 and formed on the outer surface of the second insulating film 13.

  Moreover, the manufacturing method of the semiconductor device of this embodiment described above can be summarized as follows. That is, first, a plurality of trenches 7 are formed in the main surface of the semiconductor substrate 30. Next, the first insulating film 11 extending from the inner surface of the trench 7 to the outer surface along the main surface of the semiconductor substrate 30 is formed. This becomes a gate insulating film. Next, the first conductive film 12 is formed on the main surface of the semiconductor substrate 30 so as to fill the inside of the trench 7, and then the first conductive film 12 is removed by etching to a position lower than the opening surface of the trench 7. This is the lower gate part. Next, the second insulating film 13 is formed over the entire main surface of the semiconductor substrate 30, and then the second insulating film 13 is left on the first insulating film 11, leaving the first insulating film 13 in the trench 7. An opening reaching the conductive portion 12 is formed. Next, a second conductive portion 14 that reaches the first conductive portion 12 is formed in the opening. This is the upper gate part. In this way, a semiconductor device having a trench structure is manufactured.

With the trench MOS gate structure formed as described above, there is no convex shape of the Si / SiO ₂ interface in the trench opening. That is, there is no structure that causes the gate oxide film leakage characteristics formed on the inner wall of the trench to deteriorate. This improves the gate oxide film leakage characteristics.

Embodiment 2. FIG. (Reference example)
7 to 9 are views for explaining a manufacturing method and a structure of a semiconductor device having a trench structure according to the second embodiment of the present invention. Since the steps up to FIG. 7 are the same as the steps of FIGS. 1 and 2 of the first embodiment, they are incorporated.
First, the manufacturing method will be described, and then the structure will be described.

In the manufacturing method, first, steps similar to those shown in FIGS.
Next, as shown in FIG. 7A, after the trench etching or after the post-treatment of the trench etching, a lower concentration of strain than that of the n ⁻ -type region 1 is implanted into the trench bottom.

Next, as shown in FIG. 7B, a silicon oxide film 11 (insulating film) is formed on the entire surface from the inner wall to the outer surface of the trench 7. This becomes a gate oxide film.
As a result of this, as shown in FIG. 7B, the conventional thinning of the gate oxide film 11 at the trench bottom 9 is avoided by the accelerated oxidation. In addition, it is expected that the uniformity of the gate oxide film thickness on the inner wall of the trench is improved and the gate oxide film characteristics are improved.

Next, as shown in FIG. 7C, the trench 7 is filled with a gate electrode material 12 (conductive film) (for example, poly-Si containing high-concentration phosphorus).
Next, as shown in FIG. 8A, etching is performed so that the gate electrode material 12 protrudes from the surface of the silicon substrate. Further, the p ⁺ type region 18 is formed by implantation. Thereafter, the surface of the gate electrode material 12 is oxidized to form an oxide film 15.
Next, as shown in FIG. 8B, interlayer films 16 and 17 (for example, a CVD film, silicate glass containing boron, phosphorus, or the like) are formed.

Thereafter, contact patterning is performed as shown in FIG.
Next, as shown in FIG. 9, the silicide layer 19, the barrier metal 20, and the aluminum 21 are formed by using a sputtering method, lamp annealing, or the like. Thus, an IGBT having a trench MOS gate structure is completed.

  The manufacturing method for diffusing impurities in the trench bottom has been described above in the manufacture of a semiconductor device having a structure in which the gate protrudes from the trench opening. However, the diffusion of impurities into the trench bottom has an effect regardless of the gate structure, and can be applied to a conventional gate structure semiconductor device or the gate structure semiconductor device described in the first embodiment. Applicable and effective.

  The structure and manufacturing method of this embodiment described above are summarized as follows. That is, the semiconductor device according to this embodiment has a trench 7 formed in the main surface of the semiconductor substrate 30 and extends from the inner surface of the trench 7 to the outer surface along the main surface of the semiconductor substrate 30. A film 11 is provided. In addition, the conductive film 12 extending from the inside of the trench 7 to the outer surface along the main surface of the semiconductor substrate 30 is provided. That is, the conductive film 12 has a structure protruding from the surface of the silicon substrate.

  In the method of manufacturing the semiconductor device according to this embodiment, first, the trench 7 is formed in the main surface of the semiconductor substrate 30. Next, the insulating film 11 extending from the inner surface of the trench 7 to the outer surface along the main surface of the semiconductor substrate 30 is formed. Next, the conductive film 12 is formed on the main surface of the semiconductor substrate 30 including the inside of the trench 7. Next, a portion of the conductive film 12 that is a predetermined distance away from the trench 7 is removed by etching so that the conductive film 12 extends from the inside of the trench 7 to the main surface of the semiconductor substrate 30. Thus, a semiconductor device having a trench structure is manufactured.

  In the semiconductor device of this embodiment formed as described above, since the gate oxide film 11 and the gate 12 extending from the inside of the trench 7 to the outer surface of the trench are provided, the current flowing through the gate oxide film 11 is opened to the trench opening. It can ease concentration in the department. This has the effect of improving the reliability of the gate oxide film.

  In addition, the other semiconductor device according to this embodiment has a trench formed by injecting an impurity such as arsenic into the bottom of the trench 7 regardless of the shape and structure of the gate, and then forming the gate insulating film 11 by oxidation. The bottom gate oxide film 11 has a sufficiently thick structure.

  In another semiconductor device manufacturing method according to this embodiment, first, the trench 7 is formed in the main surface of the semiconductor substrate 30. Next, impurities are implanted into the bottom of the trench 7. Thereafter, an insulating film 11 is formed on the inner surface of the trench 7. Subsequent processes are the same as before.

  When the trench MOS gate structure formed as described above is used, the uniformity of the thickness of the gate oxide film on the inner wall of the trench is improved and the gate oxide characteristics are improved.

Embodiment 3 FIG. (Reference example)
FIG. 10 is a diagram for illustrating the structure of a semiconductor device according to the third embodiment of the present invention. 11 and 12 are diagrams for explaining the operation of the semiconductor device of this embodiment.

  FIG. 10A shows an example of the semiconductor device according to this embodiment, which has the same concept as the trench MOS gate structure shown in the second embodiment, but the gate insulating film 11 extends from the trench opening to the outside of the trench. The gate 12 protrudes from the trench 7 and extends to the outer surface with the same length as the gate oxide film 11.

  FIG. 10B shows another example of the semiconductor device according to this embodiment. In the trench MOS gate structure shown in the second embodiment, the gate insulating film 11 is separated between adjacent trenches. The gate 12 is continuous without being separated. The reference numerals in the figure indicate the same or equivalent ones as in the second embodiment, and detailed description thereof is omitted.

In the structure shown in this embodiment, the gate electrode material 12 is formed above the silicon substrate in the trench opening portion as compared with the conventional trench MOS structure. Therefore, out of the total capacitor area (Stotal trench) occupied by the gate oxide film 11 extending from the trench inner wall to the substrate surface, the area of the trench opening, that is, the capacitor area of the planar portion on the substrate surface (FIG. 10A). The ratio β of the (Splanar part) increases.
Here, in the conventional trench MOS gate structure, a planar portion is present in the Splanar portion shown in FIG.

  Similarly to the case of the capacitor area, the ratio α of the trench opening portion, that is, the gate edge length of the outer surface of the trench, in the total gate edge length of the trench MOS gate structure is also shown in FIG. The trench MOS gate structure shown in a) and FIG. 10B increases.

  11 and 12 are diagrams showing the relationship between the capacitance ratio β and the edge length ratio α and the amount of charge (Qbd) stored until the gate oxide film is destroyed. The charge amount Qbd indicates the amount of charge that can be charged until the gate oxide film breaks down. This value is a parameter serving as an index of the reliability characteristic of the oxide film. It can be said that the larger the Qbd, the better the quality of the oxide film and the higher the reliability.

  In FIG. 11, it can be seen that the Qbd value increases more rapidly in the trench MOS gate structure shown in FIGS. 10A and 10B than in the conventional trench MOS gate structure. In the conventional structure, the capacity ratio β is about 2%, and in this embodiment is around 10%. From the curve of FIG. 11, if the gate oxide film 11 and the gate 12 are formed so that the capacitance ratio β is 5% or more, the amount of charge (Qbd) until dielectric breakdown can be increased by an order of magnitude or more.

  Also, in FIG. 12, it can be seen that the Qbd value increases more rapidly in the trench MOS gate structure shown in FIGS. 10A and 10B than in the conventional trench MOS gate structure. In the conventional structure, the edge length ratio α is about 5%, and in this embodiment is about 40%. When the gate oxide film 11 and the gate 12 are formed so that the edge length ratio α is 30% or more as seen from the curve of FIG. it can.

  Thus, the behavior shown in FIG. 11 and FIG. 12 is that the area of the trench opening occupies the area of the entire capacitor because the current flowing in the gate oxide film formed on the inner wall of the trench is concentrated in the trench opening. This is because the current density at the trench opening is reduced. 11 and 12, the values α and β = 100% indicate the conventional planar MOS gate structure shown in FIG.

Note that the manufacturing method of the semiconductor device having the structure shown in FIG. 10A is basically the same as the method described in the second embodiment, and thus the description thereof is omitted.
Also, the method of manufacturing the semiconductor device having the structure shown in FIG. 10B is the same as the process up to FIG. 7C in the second embodiment, and two trenches are formed in the process of FIG. 7 are formed without separating the gate 12. Since the rest is basically the same as that of the second embodiment, detailed description thereof is omitted. However, the step of FIG. 7A may be omitted.

The structure and manufacturing method of the semiconductor device according to this embodiment described above are summarized as follows.
That is, the semiconductor device of this embodiment includes an insulating film (gate oxide film) 11 extending from the inner surface of trench 7 to the outer surface along the main surface of semiconductor substrate 30, and the inside of trench 7. A conductive portion (gate) 12 extending from the first to the outer surface along the main surface of the semiconductor substrate 30 is formed to be as long as the insulating film (gate oxide film) 11.

  In another semiconductor device of this embodiment, an insulating film (gate insulating film) 11 and a conductive portion (gate) 12 are continuously formed between adjacent trenches.

  Another semiconductor device of this embodiment has a trench MOS gate structure in which the area of the planar portion in the trench opening portion occupying the total capacitor area is increased. It is particularly preferable that the capacitor area sandwiching the insulating film portion on the outer surface of the trench is 5% or more of the total capacitor area sandwiching the insulating film.

  Another semiconductor device of this embodiment has a trench MOS gate structure in which the gate edge length in the trench opening is increased. Particularly preferably, the gate edge length of the insulating film portion on the outer surface of the trench is 30% or more of the total gate edge length of the insulating film.

  According to this embodiment described above, an effect of improving the reliability of the gate oxide film can be obtained.

Embodiment 4 FIG. (Reference example)
13 and 14 are views for explaining a method and structure for manufacturing a semiconductor device having a trench structure according to the fourth embodiment of the present invention. The manufacturing steps up to FIG. 13 are the same as the steps of FIGS.
First, the manufacturing method will be described, and then the structure will be described.

The manufacturing method of this embodiment first undergoes the same steps as those shown in FIGS. 1A to 1C of the first embodiment.
Next, in the step of FIG. 1D, the CVD film 6 is deposited thicker than in the first and second embodiments, and this is patterned to open a position where the trench 7 is formed.
Next, the steps from FIG. 2A to FIG. 2D are the same as those in the first embodiment, except that the CVD film 6 is formed thick.

Next, FIG. 13A shows a state after the oxide film 10 is removed by etching from the state of FIG. Since the CVD film 6 is formed thick, the CVD film 6 remains on the outer surface of the trench opening after the oxide film 10 is removed.
Next, as shown in FIG. 13B, a gate oxide film 11 (insulating film) is formed. At this time, the gate oxide film 11 on the outer surface of the trench opening is combined with the CVD film to increase the film thickness. At this time, the thickness of the gate oxide film 11 on the outer surface of the trench opening is set to be twice or more thicker than the thickness on the inner surface of the trench.
The subsequent steps may be the same as the conventional steps, the steps after FIG. 3C of the first embodiment, the steps after FIG. 7C of the second embodiment, or the like. Is not to be done.
As described above, the manufacturing method of this embodiment is characterized in that the CVD film 6 used as a trench etching mask shown in FIG. 1 (d) is formed thicker than in the first and second embodiments.

  FIG. 14 is a cross-sectional view showing the structure of the semiconductor device thus formed. FIG. 14A is a cross-sectional view of the semiconductor device having a structure in which the upper surface of the gate 12 falls from the opening surface of the trench 7. 14 (b) is a cross-sectional view in the longitudinal direction of the trench 7. Moreover, FIG.14 (c) is an enlarged view of the corner area | region A of the trench opening part shown to Fig.14 (a). Further, FIG. 14D is a cross-sectional view of the semiconductor device having a structure in which the gate 12 protrudes from the opening surface of the trench 7.

  As shown in the enlarged view of the corner region A in FIG. 14C, the semiconductor device manufactured according to this embodiment is characterized in that the film thickness tgo × 1 of the gate oxide film 11 in the trench opening portion is That is, the gate oxide film 11 is formed more than twice the film thickness tgo × 2.

  As a result, in the vertical direction at the corner of the trench opening, that is, in the Y-direction electric field (Ecor, y), the thickness tgo × 1 of the gate oxide film 11 in the trench opening is the same as the thickness tgo × 2 inside the trench. It is more relaxed than when there is only one. Therefore, the total electric field (Ecor), which is a combined component of the X and Y direction electric fields at the corners of the trench opening, is lower than in the prior art. Therefore, the electric field applied to the gate oxide film 11 in the trench opening is relaxed, the gate oxide film leakage characteristics are improved, and the yield is improved.

Embodiment 5. FIG. (Reference example)
A structure and manufacturing method of a semiconductor device according to Embodiment 5 of the present invention will be described.
First, the manufacturing method will be described, and then the structure will be described. About a manufacturing method, as a figure which shows a process, Fig.1 (a)-FIG.3 (b) demonstrated in Embodiment 1 are used.

In the manufacturing method of this embodiment, first, the trench 7 is formed in the semiconductor substrate 30 as shown in FIG. 3A through the same steps as the steps of FIG. 1A to FIG.
Next, a feature of the manufacturing method of this embodiment is a method of forming a gate oxide film inside the trench shown in FIG.
In this embodiment, as a method for forming the gate oxide film 11 (insulating film) shown in FIG. 3B, a thermal oxide film is first formed as in the prior art, and a CVD film is further formed to form two layers. The laminated film is formed. Alternatively, a CVD film may be formed first, and then a thermal oxide film may be formed to form a two-layered film.

  As another method, a thermal oxide film is first formed, a CVD film is formed thereon, a thermal oxide film is further formed thereon, and a three-layered film is formed.

By forming the gate oxide film 11 in this way, the nonuniformity of the gate oxide film thickness on the inner wall of the trench can be alleviated. If this method is used, the uniformity of the thickness of the gate oxide film formed on the inner wall of the trench is improved, and the effect of avoiding the adverse effect due to the nonuniform thickness of the gate oxide film can be obtained.
Note that a channel may be formed at the interface with silicon, and the formation of a thermal oxide film eliminates the possibility of lowering the mobility of the MOS channel portion than using a CVD film.

  Thus, the process after forming the gate oxide film is the conventional manufacturing process, the process after FIG. 3C of the first embodiment, or the process after FIG. 7C of the second embodiment. Any of these may be used and is not limited.

Conventionally, the nonuniformity of the thickness of the gate oxide film formed on the inner wall of the trench occurs for the following reason. That is, several types of plane orientations are generated on the inner wall of the trench. Therefore, when the gate oxide film 11 is formed on the inner wall of the trench by the conventional thermal oxidation method, the plane orientation dependency appears, and thus the film thickness of the gate oxide film is nonuniform.
In this embodiment, a CVD film is laminated on a thermal oxide film, or thermal oxidation is performed after the CVD film is formed, thereby reducing the non-uniformity of the gate oxide film.

  Further, if the gate oxide film of this embodiment is formed, the LOCOS portion 23 (isolation oxide film) and the gate oxide film 11 as in the region E shown in the sectional view of FIG. Thinning (necking) of the gate oxide film 11 at the boundary can be prevented. As a result, it is possible to prevent the gate oxide film from being broken in the region E and the gate oxide film characteristics from being deteriorated.

  The method of this embodiment can be used in place of the method of removing the non-uniform thickness of the gate oxide film 11 by forming an n layer at the trench bottom and performing accelerated oxidation. Both of these methods can obtain the effect of making the thickness of the gate oxide film uniform.

  In addition, as described above, the semiconductor device according to this embodiment has the trench 7 formed in the main surface of the semiconductor substrate 30, and insulation such as the gate oxide film 11 formed on the inner surface of the trench 7. A structure in which a CVD film is laminated on a thermal oxide film, a structure in which a thermal oxide film is formed on a CVD film, or a structure in which a CVD film is laminated on a thermal oxide film and a thermal oxide film is further laminated It is said. The trench 7 has a structure in which a conductive film such as a gate 12 is formed.

  As described above, according to this embodiment, the gate oxide film 11 formed on the inner wall of the trench has a thermal oxide film + CVD film laminated film, a CVD film + thermal oxide film laminated film, or a thermal oxide film + CVD film + By using a laminated film made of a thermal oxide film, the uniformity of the film thickness of the gate oxide film 11 formed on the inner wall of the trench can be improved, and the reliability of the gate oxide film can be improved.

Embodiment 6 FIG.
A method for manufacturing a semiconductor device according to Embodiment 6 of the present invention will be described.
About a manufacturing method, as a figure which shows a process, Fig.1 (a)-FIG.3 (c) demonstrated in Embodiment 1 are used.

In the manufacturing method according to this embodiment, first, the trench 7 is formed in the semiconductor substrate 30 as shown in FIG. 3B through the same steps as the steps of FIGS. A gate oxide film 11 (insulating film) is formed on the inner surface of the trench.
Next, a feature of the manufacturing method of this embodiment is a method of forming the gate electrode material 12 (conductive film) shown in FIG.
In this embodiment, as shown in FIG. 3C, a gate electrode material 12 (for example, poly-Si containing high-concentration phosphorus) is embedded in the trench 7. Then, nitrogen is implanted into the gate electrode material 12. This nitrogen implantation amount is 0.1 to 2 times the implantation amount for forming the n ⁺ emitter diffusion layer 5.

  In the subsequent steps, as shown in FIG. 1D of the first embodiment, the gate electrode material 12 is etched. Alternatively, as shown in FIG. 8A of the second embodiment, the gate electrode material 12 may be etched. Thus, the subsequent steps are not limited.

In this embodiment, as described above, nitrogen is injected into the gate electrode material 12 and annealed, so that nitrogen diffused by annealing is precipitated in the gate oxide film 11 and is formed at the interface between the gate oxide film 11 and the substrate 30. Alternatively, a nitrogen-rich gate oxide film 11 is formed at the interface between the gate oxide film 11 and the date electrode material 12. As a result, after the gate oxide film 11 is formed, the diffusion of impurities from the n ⁺ emitter layer 5 and the p base layer 4 serving as a dopant to be diffused into the gate oxide film 11 by annealing is suppressed to the gate oxide film 11. There is an effect of reducing the deterioration of the characteristics of the oxide film.

  Further, nitridation by nitrogen implantation reduces the generation of interface states by occupying dangling bonds and imperfect crystals existing at the interface between the gate oxide film 11 and the substrate 30. In addition, Si—H and Si—PH bonds that act as electron traps in the oxide film become Si—N bonds, so that electron traps in the gate oxide film can be reduced. As a result, there is an effect of improving the hot carrier resistance of the transistor having the trench MOS gate structure.

This method may be the case where the gate oxide film 11 is a thermal oxide film, or, as shown in the third embodiment, when a CVD film is formed on the thermal oxide film as a gate oxide film, or CVD is performed. The same effect can be obtained when a thermal oxide film is formed after film formation, or when a CVD film is formed on a thermal oxide film and further a thermal oxide film is formed thereon.
The same effect can be obtained when the present invention is applied not only to a trench MOS gate structure but also to a planar MOS gate structure power device shown in FIG.

  According to this embodiment, as described above, a semiconductor device having a trench structure in which nitrogen is implanted into the gate can be obtained.

  As described above, according to the manufacturing method of this embodiment, nitrogen is injected into the gate electrode material to nitride the silicon / gate oxide film interface, thereby suppressing impurity diffusion into the gate oxide film and the gate oxide film. The trap inside can be reduced. Thereby, the reliability of the gate oxide film formed on the inner wall of the trench can be improved.

Embodiment 7 FIG. (Reference example)
FIG. 15 is a diagram for explaining a semiconductor device according to a seventh embodiment of the present invention.
FIG. 15A shows a structure of a trench MOSFET to which the trench MOS gate structure of the second embodiment is applied.

FIG. 15B is an example of an IGBT structure to which the trench MOS gate structure of the second embodiment is applied. The collector structure forms not only the p ⁺ type diffusion layer 3 but also the p − type region 3a. It has a p ⁺ / p ⁻ collector structure.

FIG. 15C shows another structure example of the IGBT to which the trench MOS gate structure of the second embodiment is applied. The collector structure forms not only the p ⁺ type diffusion layer 3 but also the n + type region 3b. , P ⁺ / n ⁺ collector structure. Since other reference numerals are the same as those already described, detailed description thereof is omitted.

  As described above, the trench MOS gate structure described in the first to sixth embodiments can be applied to various semiconductor devices such as a power device having the trench MOS gate structure, and is described in the first to sixth embodiments. The effect which was made.

Sectional drawing which shows the manufacturing process of the semiconductor device which has a trench structure by Embodiment 1 of this invention. Sectional drawing which shows the manufacturing process of the semiconductor device which has a trench structure by Embodiment 1 of this invention. Sectional drawing which shows the manufacturing process of the semiconductor device which has a trench structure by Embodiment 1 of this invention. Sectional drawing which shows the manufacturing process of the semiconductor device which has a trench structure by Embodiment 1 of this invention. Sectional drawing which shows the manufacturing process of the semiconductor device which has a trench structure by Embodiment 1 of this invention. Sectional drawing which shows the manufacturing process of the semiconductor device which has a trench structure by Embodiment 1 of this invention. Sectional drawing which shows the manufacturing process of the semiconductor device which has a trench structure by Embodiment 2 of this invention. Sectional drawing which shows the manufacturing process of the semiconductor device which has a trench structure by Embodiment 2 of this invention. Sectional drawing which shows the manufacturing process of the semiconductor device which has a trench structure by Embodiment 2 of this invention. Sectional drawing which shows the manufacturing process of the semiconductor device which has a trench structure by Embodiment 3 of this invention. The figure for demonstrating the effect | action of the semiconductor device which has a trench structure by Embodiment 3 of this invention. The figure for demonstrating the effect | action of the semiconductor device which has a trench structure by Embodiment 3 of this invention. Sectional drawing which shows the manufacturing process of the semiconductor device which has trench structure by Embodiment 4 of this invention. Sectional drawing which shows the structure of the semiconductor device which has trench structure by Embodiment 4 of this invention. Sectional drawing which shows the structure of the semiconductor device which has trench structure by Embodiment 7 of this invention. Sectional drawing which shows the semiconductor device of the conventional trench MOS gate structure. Sectional drawing which shows the semiconductor device of the conventional planar MOS gate structure. Sectional drawing which shows the manufacturing process of the conventional trench MOS gate structure. Sectional drawing which shows the manufacturing process of the conventional trench MOS gate structure. Sectional drawing which shows the manufacturing process of the conventional trench MOS gate structure.

Explanation of symbols

1 n− type diffusion layer, 2 n type diffusion layer, 3 p + type high concentration diffusion layer, 4 p type base layer, 5 n ⁺ type emitter diffusion layer, 6 CVD film, 7 trench, 8 trench opening, 9 trench Bottom, 10 silicon oxide film, 11 silicon oxide film, gate oxide film, gate insulating film, (insulating film, first insulating film), 12 gate electrode material (conductive film, first conductive film), gate (conductive part) , First conductive portion), 13 CVD film, second gate insulating film (second insulating film), 14 gate electrode material (conductive film), gate (second conductive portion), 15 silicon oxide film, 16 , 17 interlayer film, 18 p ⁺ region, 19 silicide layer, 20 barrier metal, 21 aluminum, 30 semiconductor substrate.

Claims (6)

  A trench formed on a main surface of a semiconductor substrate, an insulating film formed on at least the inner surface of the trench, and a conductive portion formed at least inside the trench and implanted with nitrogen. A semiconductor device having a trench structure.   2. The semiconductor device having a trench structure according to claim 1, wherein the semiconductor substrate is a silicon semiconductor substrate, the insulating film is a silicon oxide film, and the conductive film is a silicon polycrystalline conductor.   2. The semiconductor device having a trench structure according to claim 1, wherein the trench side surface of the semiconductor substrate is a channel, the insulating film is a gate insulating film, and the conductive film is a gate.   Forming a trench on the main surface of the semiconductor substrate; forming an insulating film on at least the inner surface of the trench; forming a conductive film on the main surface of the semiconductor substrate including the inside of the trench; A method for manufacturing a semiconductor device having a trench structure, comprising: a step of injecting nitrogen; and a step of patterning the conductive film corresponding to the trench.   5. The semiconductor device having a trench structure according to claim 4, wherein a silicon semiconductor substrate is used as the semiconductor substrate, a silicon oxide film is formed as the insulating film, and a silicon polycrystalline conductive film is formed as the conductive film. Manufacturing method.   5. The method of manufacturing a semiconductor device having a trench structure according to claim 4, wherein the side surface of the trench of the semiconductor substrate is a channel, the insulating film is a gate insulating film, and the conductive film is a gate.

Images