JP2007079015A - Projection optical system, exposure device, and method of manufacturing micro device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a projection optical system having a wide exposure area, a high resolution, and satisfactory optical characteristics. <P>SOLUTION: The projection optical system PL1 for projecting an image of a first object M1 on a second object P1 includes a first negative lens group GN1 having a negative refracting power, a first positive lens group GP1 having a positive refracting power, a second negative lens group GN2 having a negative refracting power, a second positive lens group GP2 having a positive refracting power, a third negative lens group GN3 having a negative refracting power, a third positive lens group GP3 having a positive refracting power, a fourth negative lens group GN4 having a negative refracting power, which are arranged in order from the first object side. At least one of the first negative lens group and the fourth negative lens group includes first refracting members L1 and L30 having a negative refracting power and second refracting members L3 and L32 having a negative refracting power. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a projection optical system used for manufacturing a microdevice such as a flat panel display element such as a liquid crystal display element in a lithography process, an exposure apparatus provided with the projection optical system, and a microdevice using the exposure apparatus It is related with the manufacturing method.

  In recent years, liquid crystal display panels have been frequently used as display elements used in personal computers, televisions and the like. The liquid crystal display panel is manufactured by patterning a transparent thin film electrode on a glass substrate (plate) into a desired shape by a photolithography technique. As an apparatus for this photolithography process, there is used a projection exposure apparatus that projects and exposes an original pattern formed on a mask onto a photoresist layer on a plate via a refractive projection optical system.

  In a projection optical system provided in a projection exposure apparatus, a wide exposure area and a high resolving power are required as the pattern becomes finer and the plate becomes larger. In order to realize a wide exposure area and high resolving power, a double-sided telecentric projection optical system using an aspherical surface has been developed (for example, see Patent Document 1).

JP 2000-199850 A

  In general, in order to realize a projection exposure apparatus having high resolution, it is necessary to increase the numerical aperture of the projection optical system to be mounted. On the other hand, the depth of focus of the projection optical system becomes narrower in inverse proportion to the square of the numerical aperture. For this reason, in a projection optical system having a high resolution with a large numerical aperture, the depth of focus becomes narrow. Therefore, in order to achieve a high resolution and a wide exposure area in the projection optical system, it is necessary to ensure the flatness of the image plane. In order to ensure the flatness of the image plane, it is necessary to reduce the curvature of field of the projection optical system, and the curvature of field can be reduced by reducing the Petzval sum.

  The Petzval sum is corrected by providing an optical member having a negative refractive power in the projection optical system. In the projection optical system described in Patent Document 1, a lens group (referred to as a negative lens group) having a negative refractive power in the vicinity of a lens group (referred to as a main lens group) having a positive refractive power responsible for a main image forming function. Is provided. When the Petzval sum is corrected by increasing the negative refractive power of the negative lens group, the light divergence increases, so that the optical member constituting the main lens group must be enlarged. However, increasing the size of the optical member constituting the main lens group that corrects longitudinal chromatic aberration has been difficult both in terms of cost and technology.

  An object of the present invention is to provide a projection optical system having a wide exposure area, high resolution and good optical characteristics, an exposure apparatus provided with the projection optical system, and a method of manufacturing a micro device using the exposure apparatus. .

  The projection optical system according to the present invention is a projection optical system that projects an image of a first object onto a second object, and a first negative lens group having negative refractive power arranged in order from the first object side. A first positive lens group having a positive refractive power, a second negative lens group having a negative refractive power, a second positive lens group having a positive refractive power, and a third negative lens having a negative refractive power A lens group, a third positive lens group having a positive refractive power, and a fourth negative lens group having a negative refractive power, wherein at least one of the first negative lens group and the fourth negative lens group is negative The lens group includes a first refractive member having a negative refractive power and a second refractive member having a negative refractive power.

  The exposure apparatus of the present invention includes the projection optical system of the present invention and a substrate stage that holds a photosensitive substrate as the second object, and the pattern optical image on the first object is transferred to the projection optical system. And projecting onto the photosensitive substrate.

  The microdevice manufacturing method of the present invention includes an exposure step of exposing a predetermined pattern on a photosensitive substrate using the exposure apparatus of the present invention, and a development of developing the photosensitive substrate exposed by the exposure step. And a process.

  According to the projection optical system of the present invention, since the first negative lens group is provided on the first object side and the fourth negative lens group is provided on the second object side, the second positive lens group is not increased in size. The Petzval sum can be corrected well. Therefore, since the amount of field curvature of the projection optical system can be reduced, the flatness of the image plane can be ensured. Further, since the first refracting member and the second refracting member having negative refracting power are provided, the coma aberration of the projection optical system can be satisfactorily corrected without excessively diverging light rays. . Therefore, it is possible to provide a projection optical system having a wide exposure area, high resolution, and good optical characteristics.

  Further, according to the exposure apparatus of the present invention, since a projection optical system having a wide exposure area, high resolution and good optical characteristics is provided, a fine pattern can be exposed on a photosensitive substrate with high throughput. .

  Further, according to the microdevice manufacturing method of the present invention, since exposure is performed using an exposure apparatus including a projection optical system having a wide exposure area, high resolution, and good optical characteristics, a highly accurate microdevice can be obtained. High throughput can be obtained.

  Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 are diagrams showing the lens configuration of the projection optical system according to the first to third embodiments of the present invention. The projection magnifications MAG of the projection optical systems PL1 to PL3 according to the respective embodiments satisfy the condition of MAG ≧ 1. In other words, since the projection magnifications of the projection optical systems PL1 to PL3 are equal or magnified, the projection area (exposure area) on the plate P1 can be increased, and the throughput can be improved.

  The projection optical systems PL1 to PL3 according to the embodiments include a first negative lens group GN1 (GN11, GN21) having a negative refractive power and a positive refractive power in order from the object side (that is, the mask M1 to M3 side). A first positive lens group GP1 (GP11, GP21) having a negative refractive power, a second negative lens group GN2 (GN12, GN22) having a negative refractive power, and a second positive lens group GP2 (GP12, GP22 having a positive refractive power). ), A third negative lens group GN3 (GN13, GN23) having a negative refractive power, a third positive lens group GP3 (GP13, GP23) having a positive refractive power, and a fourth negative lens having a negative refractive power. And a lens group GN4 (GN14, GN24).

  In the first embodiment shown in FIG. 1, the first negative lens group GN1 includes a biconcave lens (first lens) in which the image side is formed in an aspherical order in the order in which light rays from the object side (masks M1 to M3 side) pass. 1 refracting member) L1, a positive meniscus lens L2 having a concave surface facing the object side, and a negative meniscus lens (second refracting member) L3 having an aspheric surface facing the object side.

  The first positive lens group GP1 includes a biconvex lens L4, a positive meniscus lens L5 having a concave surface facing the object side, a biconvex lens L6, a biconvex lens L7, and a concave surface on the image side, in the order in which light rays from the first negative lens group GN1 pass. And a positive meniscus lens L8.

  The second negative lens group GN2 includes a negative meniscus lens L9 having a concave surface on the image side, a positive meniscus lens L10 having a concave surface on the image side, and a non-object side on the object side in the order in which light rays from the first positive lens group GP1 pass. A negative meniscus lens L11 having a concave surface formed in a spherical shape, a negative meniscus lens L12 having a concave surface facing the object side, a biconvex lens L13, and a negative meniscus lens L14 having a concave surface formed in an aspheric shape on the object side. It is configured.

  The second positive lens group GP2 includes a biconvex lens L15, a positive meniscus lens L16 having a concave surface facing the object side, an aperture stop AS1, a biconvex lens L17, and a concave surface on the image side in the order in which light rays from the second negative lens group GN2 pass. A positive meniscus lens L18 having a concave surface, a positive meniscus lens L19 having a concave surface facing the image side, and a biconvex lens L20.

  The third negative lens group GN3 includes a biconcave lens L21 having an aspheric surface on the image side, a negative meniscus lens L22 having a concave surface facing the image side, and a biconcave lens L23 in the order in which light rays from the second positive lens group GP2 pass. And a positive meniscus lens L24 having a concave surface facing the object side, and a biconcave lens L25.

  The third positive lens group GP3 includes a biconvex lens L26, a positive meniscus lens L27 having a concave surface on the object side, a positive meniscus lens L28 having a concave surface on the image side, in the order in which light rays from the third negative lens group GN3 pass. It is constituted by a biconvex lens L29.

  The fourth negative lens group GN4 includes a negative meniscus lens (first refractive member) L30 having a concave surface formed in an aspheric shape on the image side, a biconvex lens L31, and a biconcave lens formed in an aspheric shape on the object side. (Second refraction member) L32.

  In the second embodiment shown in FIG. 2, the first negative lens group GN11 includes a positive meniscus lens L35 having a concave surface directed toward the object side and an image side in the order in which light rays from the object side (mask M2 side) pass. It is composed of a biconcave lens (first refractive member) L36 having a concave surface formed in an aspheric shape and a negative meniscus lens (second refractive member) L37 having a concave surface formed in an aspheric shape on the object side. ing.

  The first positive lens group GP11 includes a biconvex lens L38, a positive meniscus lens L39 having a concave surface facing the object side, a biconvex lens L40, a biconvex lens L41, and a concave surface on the image side, in the order in which the light rays from the first negative lens group GN11 pass. Is formed by a positive meniscus lens L42 facing the lens.

  The second negative lens group GN12 includes a negative meniscus lens L43 having a concave surface on the image side, a positive meniscus lens L44 having a concave surface on the image side, and a non-object side on the object side in the order in which light rays from the first positive lens group GP11 pass. The lens includes a biconcave lens L45 having a concave surface formed in a spherical shape, a biconcave lens L46, a positive meniscus lens L47 having a concave surface facing the image side, and a biconcave lens L48 formed in an aspheric shape on the image side.

  The second positive lens group GP12 has a biconvex lens L49, a biconvex lens L50, an aperture stop AS2, a biconvex lens L51, a biconvex lens L52, and a positive surface with a concave surface facing the image in the order in which the light rays from the second negative lens group GN12 pass. A meniscus lens L53 and a biconvex lens L54 are used.

  The third negative lens group GN13 includes a biconcave lens L55 having an aspheric surface on the image side, a negative meniscus lens L56 having a concave surface directed to the image side, and a biconcave lens L57 in the order in which light rays from the second positive lens group GP12 pass. , A positive meniscus lens L58 having a concave surface facing the object side, and a biconcave lens L59.

  The third positive lens group GP13 includes a positive meniscus lens L60 having a concave surface directed toward the object side, a biconvex lens L61, a biconvex lens L62, and a biconvex lens L63 in the order in which light rays from the third negative lens group GN13 pass. .

  The fourth negative lens group GN14 includes a negative meniscus lens (first refractive member) L64 having a concave surface formed in an aspheric shape on the image side in the order in which the light beam from the third positive lens group GP13 passes, and the object side. And a biconcave lens (second refractive member) L65 and a biconvex lens L66 formed in an aspherical shape.

  In the third embodiment shown in FIG. 3, the first negative lens group GN21 includes a biconcave lens (first lens) in which the image side is formed in an aspheric shape in the order in which light rays from the object side (mask M2 side) pass. (Refractive member) L70, a positive meniscus lens L71 having a concave surface facing the object side, and a negative meniscus lens (second refractive member) L72 having a concave surface formed in an aspherical shape on the object side.

  The first positive lens group GP21 includes a biconvex lens L73, a positive meniscus lens L74 having a concave surface facing the object side, a biconvex lens L75, a positive meniscus lens L76 having a concave surface facing the image side, and a positive meniscus lens having a concave surface facing the image side. L77.

  The second negative lens group GN22 includes a negative meniscus lens L78 having a concave surface on the image side, a negative meniscus lens L79 having a concave surface on the image side, and a non-object side on the object side in the order in which light rays from the first positive lens group GP21 pass. A negative meniscus lens L80 having a concave surface formed in a spherical shape, a negative meniscus lens L81 having a concave surface directed to the object side, a biconvex lens L82, and a biconcave lens L83 formed in an aspheric shape on the image side.

  The second positive lens group GP22 includes a biconvex lens L84, a positive meniscus lens L85 having a concave surface facing the object side, an aperture stop AS3, a biconvex lens L86, a biconvex lens L87 in the order in which the light rays from the second negative lens group GN22 pass. The lens includes a positive meniscus lens L88 and a biconvex lens L89 having a concave surface facing the image side.

  The third negative lens group GN23 includes a biconcave lens L90 having an aspheric surface on the object side, a biconcave lens L91, a biconcave lens L92, a biconvex lens L93, and a negative meniscus lens L94 having a concave surface facing the object side.

  The third positive lens group GP23 includes a positive meniscus lens L95 having a concave surface facing the object side, a positive meniscus lens L96 having a concave surface facing the object side, a biconvex lens L97, in the order in which light rays from the third negative lens group GN23 pass. A biconvex lens L98 is used.

  The fourth negative lens group GN24 includes a negative meniscus lens (first refractive member) L99 having a concave surface formed in an aspheric shape on the image side in the order in which light rays from the third positive lens group GP23 pass, and a biconvex lens. L100 is composed of a biconcave lens (second refractive member) L101 formed in an aspheric shape on the object side.

  In the first to third embodiments described above, the first negative lens group GN1 (GN11, GN21) is derived from the second positive lens group GP2 (GP12, GP22) responsible for the main imaging function of the projection optical systems PL1 to PL3. Since they are arranged at distant positions, Petzval is prevented by the negative refractive power of the first negative lens group GN1 (GN11, GN21) without increasing the size of the lens constituting the second positive lens group GP2 (GP12, GP22). Sum correction can be performed. Further, since the first negative lens group GN1 (GN11, GN21) includes two lenses L1 and L3 (L36, L37; L70, L72) having negative refractive power, the first negative lens group GN1 (GN11, The divergence of light rays in GN21) does not become too large, and the coma aberration of the projection optical systems PL1 to PL3 is corrected well.

  Here, in the first embodiment, as shown in FIG. 1, the concave surface (first concave surface) R1 of the biconcave lens L1 and the aspherical surface of the negative meniscus lens L3 are formed. The concave surfaces (second concave surfaces) R2 are arranged so as to face each other in opposite directions. In the second embodiment, as shown in FIG. 2, the concave surface (first concave surface) R5 of the positive meniscus lens L36 formed in an aspheric shape and the concave surface (a concave surface of the negative meniscus lens L37 formed in an aspheric shape ( The second concave surface (R6) is arranged so as to face each other in opposite directions. And in 3rd Embodiment, as shown in FIG. 3, the concave surface (1st concave surface) R9 formed in the aspherical shape of the biconcave lens L70 and the concave surface formed in the aspherical shape of the negative meniscus lens L72. (Second concave surface) R10 and R10 are arranged so as to face each other in opposite directions.

  In these first to third embodiments, the off-axis light beam passing through the first negative lens group GN1 (GN11, GN21) passes through the position farthest from the optical axis of the projection optical systems PL1 to PL3. The first concave surface R1 (R5, R9) and the second concave surface R2 (R6, R10) are arranged so as to face each other in opposite directions, and the coma aberration and Petzval sum of the projection optical systems PL1 to PL3 are corrected well. Yes. As in the first and third embodiments, the lenses L2, L31 (L71, L100) are interposed between the first concave surface R1 (R5, R9) and the second concave surface R2 (R6, R10). It does not matter.

In the projection optical systems PL1 to PL3 according to the first to third embodiments, the focal length of the first negative lens group GN1 (GN11, GN21) is f1CC, and the first positive lens group GP1 (GP11, GP21). When the focal length is f1CV,
1 <| f1CC | / f1CV <3 (1)
It is preferable to satisfy the following conditions.

  By satisfying the above condition (1), the coma aberration and Petzval sum of the projection optical systems PL1 to PL3 can be corrected well without increasing the size of the lenses constituting the second positive lens group GP2 (GP12, GP22). be able to. If the lower limit of the condition (1) is not reached, the negative refractive power of the first negative lens group GN1 (GN11, GN21) becomes large, and it is difficult to correct the coma aberration of the projection optical systems PL1 to PL3. Therefore, it is not preferable. If the upper limit of the condition (1) is exceeded, the negative refractive power of the first negative lens group GN1 (GN11, GN21) becomes small, and it becomes difficult to correct the Petzval sum, or the second positive lens The negative refractive powers of the second negative lens group GN2 (GN12, GN22) and the third negative lens group GN3 (GN13, GN23) located in the vicinity of the group GP2 (GP12, GP22) are increased, and the second positive lens group GP2 Since it is necessary to increase the size of the lenses constituting (GP12, GP22), it is not preferable.

  In the projection optical systems PL1 to PL3 according to the first to third embodiments, the lenses L15 to L20 (L49 to L54; L84 to L89) constituting the second positive lens group GP2 (GP12, GP22) are It is an optical member suitable for correcting axial chromatic aberration, and is difficult to increase in size and cost in terms of technology. However, in the first to third embodiments, the first negative lens group GN1 (GN11) having negative refractive power suitable for Petzval sum correction at a position away from the second positive lens group GP2 (GP12, GP22). , GN21) and the fourth negative lens group GN4 (GN14, GN24), the lenses L15 to L20 (L49 to L54; L84 to L89) constituting the second positive lens group GP2 (GP12, GP22). Miniaturization can be achieved.

In the projection optical systems PL1 to PL3 according to the first to third embodiments, the focal length of the second negative lens group GN2 (GN12, GN22) is f2CC, and the second positive lens group GP2 (GP12, GP22). When the focal length is f2CV,
0.5 <| f2CC | / f2CV <1.5 (2)
It is preferable to satisfy the following conditions.
By satisfying the above condition (2), the spherical aberration and Petzval sum of the projection optical systems PL1 to PL3 are corrected well.

  If the lower limit of the condition (2) is not reached, the negative refractive power of the second negative lens group GN2 (GN12, GN22) becomes too large, and it becomes difficult to correct the spherical aberration of the projection optical systems PL1 to PL3. Therefore, it is not preferable. If the upper limit of the condition (2) is exceeded, the negative refractive power of the second negative lens group GN2 (GN12, GN22) becomes too small, and it is difficult to correct the Petzval sum of the projection optical systems PL1 to PL3. This is not preferable.

In the projection optical systems PL1 to PL3 according to the first to third embodiments, the focal length of the third negative lens group GN3 (GN13, GN23) is f3CC and that of the second positive lens group GP2 (GP12, GP22). When the focal length is f2CV,
0.5 <| f3CC | / f2CV <1.5 (3)
It is preferable to satisfy the following conditions.

  By satisfying the condition (3), the spherical aberration and the Petzval sum of the projection optical systems PL1 to PL3 are corrected well. If the lower limit value of the condition (3) is not reached, the negative refractive power of the third negative lens group GN3 (GN13, GN23) becomes too large, and it becomes difficult to correct the spherical aberration of the projection optical systems PL1 to PL3. Therefore, it is not preferable. If the upper limit of the condition (3) is exceeded, the negative refractive power of the third negative lens group GN3 (GN13, GN23) becomes too small, and it is difficult to correct the Petzval sum of the projection optical systems PL1 to PL3. This is not preferable.

  In the projection optical systems PL1 to PL3 according to the first to third embodiments, the fourth negative lens group GN4 (GN14, GN24) is a second positive lens responsible for the main imaging action of the projection optical systems PL1 to PL3. Since the lens is disposed at a position away from the group GP2 (GP12, GP22), the fourth negative lens group GN4 (GN14, GN24) is not enlarged without increasing the size of the lens constituting the second positive lens group GP2 (GP12, GP22). The negative Petroval sum can be corrected by the negative refractive power. Further, since the fourth negative lens group GN4 (GN14, GN24) includes two lenses L30 and L32 (L64, L65; L99, L101) having negative refractive power, the fourth negative lens group GN4 (GN14, The divergence of light rays in GN24) does not become too large, and the coma aberration of the projection optical systems PL1 to PL3 is corrected well.

  Here, in the first embodiment, as shown in FIG. 1, the concave surface (first concave surface) R3 of the negative meniscus lens L30 and the aspheric surface of the biconcave lens L32 are formed. The concave surface (second concave surface) R4 is disposed so as to face each other in opposite directions. In the second embodiment, as shown in FIG. 2, the concave surface (first concave surface) R7 of the negative meniscus lens L36 formed as an aspheric surface and the concave surface (first surface) of the biconcave lens L65 formed as an aspheric surface. 2 concave surfaces) are arranged so as to face each other in the opposite directions. And in 3rd Embodiment, as shown in FIG. 3, the concave surface (1st concave surface) R11 formed in the aspherical surface of the negative meniscus lens L99 and the concave surface formed in the aspherical surface of the biconcave lens L101. (Second concave surface) R12 and R12 are arranged to face each other in opposite directions.

  In these first to third embodiments, the off-axis light beam passing through the fourth negative lens group GN4 (GN14, GN24) passes through the position farthest from the optical axis of the projection optical systems PL1 to PL3. The first concave surface R3 (R7, R11) and the second concave surface R4 (R8, R12) are arranged so as to face each other in opposite directions, and the coma aberration and Petzval sum of the projection optical systems PL1 to PL3 are corrected well. Yes.

In the projection optical systems PL1 to PL3 according to the first to third embodiments, the focal length of the fourth negative lens group GN4 (GN14, GN24) is f4CC, and that of the third positive lens group GP3 (GP13, GP23). When the focal length is f3CV,
1 <| f4CC | / f3CV <3 (4)
It is preferable to satisfy the following conditions.

  By satisfying the above condition (4), the coma aberration and Petzval sum of the projection optical systems PL1 to PL3 can be corrected well without increasing the size of the lenses constituting the second positive lens group GP2 (GP12, GP22). be able to. If the lower limit of the condition (4) is not reached, the negative refractive power of the fourth negative lens group GN4 (GN14, GN24) becomes large, and it is difficult to correct the coma aberration of the projection optical systems PL1 to PL3. Therefore, it is not preferable. If the upper limit of the condition (4) is exceeded, the negative refractive power of the fourth negative lens group GN4 (GN14, GN24) becomes small, and it becomes difficult to correct the Petzval sum, or the second positive lens. The negative refractive powers of the second negative lens group GN2 (GN21, GN22) and the third negative lens group GN3 (GN13, GN23) located in the vicinity of the group GP2 (GP12, GP22) are increased, and the second positive lens group GP2 Since it is necessary to increase the size of the lenses constituting (GP12, GP22), it is not preferable.

  According to the projection optical systems PL1 to PL3 according to the first to third embodiments, the first negative lens group GN1 (GN11, GN21) is provided on the masks M1 to M3 side, and the first on the plates P1 to P3 side. Since the four negative lens groups GN4 (GN14, GN24) are provided, the Petzval sum can be corrected well without increasing the size of the second positive lens group GP2 (GP12, GP22). Therefore, the curvature of field of the projection optical systems PL1 to PL3 can be reduced, and the flatness of the image plane can be ensured. Further, in the first negative lens group GN1 (GN11, GN21) and the fourth negative lens group GN4 (GN14, GN24), negative lenses L1, L3, L30, L32 (L36, L37) as first and second refractive members. , L64, L65; L70, L72, L99, L101), the divergent action of light rays in the first negative lens group GN1 (GN11, GN21) and the fourth negative lens group GN4 (GN14, GN24) is large. The coma aberration of the projection optical systems PL1 to PL3 is corrected well.

  Next, with reference to FIG. 4, a projection exposure apparatus including the projection optical systems PL1 to PL3 according to the first to third embodiments described above as a fourth embodiment will be described. FIG. 4 is a diagram showing a schematic configuration of a step-and-repeat type projection exposure apparatus according to the fourth embodiment of the present invention. In the following description, the XYZ orthogonal coordinate system shown in FIG. 4 is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system is set so that the X axis and the Y axis are parallel to the wafer W, and the Z axis is set in a direction orthogonal to the wafer W. In the XYZ coordinate system in the figure, the XY plane is actually set to a plane parallel to the horizontal plane, and the Z-axis is set vertically upward.

  As shown in FIG. 4, the projection exposure apparatus according to the fourth embodiment includes an illumination optical system IL that includes a light source and includes an optical integrator, a field stop, a condenser lens, and the like. The exposure light emitted from the light source passes through the illumination optical system IL and illuminates the pattern provided on the mask M. The light that has passed through the mask M is constituted by the projection optical system PL1 according to the first embodiment, the projection optical system PL2 according to the second embodiment, or the projection optical system PL3 according to the third embodiment. Projection exposure is performed on an exposure region on a flat panel display plate (photosensitive substrate) P having an outer diameter of greater than 500 mm through the projection optical system PL. Here, that the outer diameter is larger than 500 mm means that one side or diagonal line is larger than 500 mm.

  The mask M is held on the mask stage MST. The mask stage MST is configured to be finely movable in the X direction and the Y direction, and to be slightly rotatable around the Z direction. In the mask stage MST, the positions in the X direction, the Y direction, and the rotation direction are measured and controlled in real time by a mask laser interferometer (not shown).

  The plate P is held on the plate stage PST. The plate stage PST is configured to be movable in the X direction and the Y direction, and to be rotatable about the Z direction. In the plate stage PST, the positions in the X direction, the Y direction, and the rotation direction are measured and controlled in real time by a wafer laser interferometer (not shown).

  The control unit 6 provided in the projection exposure apparatus adjusts the position of the mask M in the X direction, the Y direction, and the rotation direction based on the measurement values measured by the mask laser interferometer. That is, the control unit 6 transmits a control signal to the mask stage driving unit 8 and finely moves the mask stage MST to adjust the position of the mask M.

  Further, the control unit 6 adjusts the position of the plate P in the X direction, the Y direction, and the rotation direction based on the measurement values measured by the plate laser interferometer. That is, the control unit 6 transmits a control signal to the substrate stage driving unit 10 and drives the plate stage PST by the substrate stage driving unit 10 to adjust the position of the plate P in the X direction, the Y direction, and the rotation direction.

  At the time of exposure, the control unit 6 outputs a control signal to the substrate stage driving unit 10 to drive the plate stage PST on which the plate P is placed, thereby sequentially moving each shot area on the plate P to the exposure position. That is, the operation of exposing the pattern image of the mask M on the plate P by the step and repeat method is repeated.

  The projection exposure apparatus according to the fourth embodiment includes a projection optical system having a wide exposure area, high resolution, and good optical characteristics, so that a fine pattern is exposed on the plate with high throughput. be able to.

  The fourth embodiment is an exposure apparatus that collectively exposes the pattern image of the mask M onto the plate P. However, the present invention is not limited to this, and the plate P is moved in the scanning direction with respect to the projection optical systems PL1 to PL3. It is also possible to use a scanning exposure apparatus (step-and-scan exposure apparatus) that performs exposure while moving to the position.

  In the projection exposure apparatus according to the above-described embodiment, the illumination optical system illuminates the mask M (illumination process), and the projection optical system PL1 according to the first embodiment of the present invention and the second embodiment are applied. By exposing the photosensitive substrate (plate) to the transfer pattern formed on the mask using the projection optical system PL2 or the projection optical system PL3 according to the third embodiment (exposure process), a micro device (semiconductor Element, image sensor, liquid crystal display element, thin film magnetic head, etc.). FIG. 5 is a flowchart of an example of a method for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a plate or the like as a photosensitive substrate using the exposure apparatus according to the above-described embodiment. Will be described with reference to FIG.

  First, in step 301 of FIG. 5, a metal film is deposited on one lot of plates. In the next step 302, a photoresist is applied on the metal film on the one lot of plates. Thereafter, in step 303, using the exposure apparatus according to the above-described embodiment, the pattern image on the mask is sequentially exposed and transferred to each shot area on the plate of the one lot via the projection optical system. . Thereafter, in step 304, the photoresist on the one lot of plates is developed, and in step 305, the resist pattern is etched on the one lot of plates to form a pattern on the mask. Corresponding circuit patterns are formed in each shot area on each plate.

  Thereafter, a device pattern such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer. According to the semiconductor device manufacturing method described above, since exposure is performed using an exposure apparatus having a projection optical system having high resolution and good aberration correction, it has an extremely fine circuit pattern. A semiconductor device can be obtained. In steps 301 to 305, a metal is vapor-deposited on the plate, a resist is applied on the metal film, and exposure, development, and etching processes are performed. Prior to these processes, the process is performed on the plate. It is needless to say that after forming a silicon oxide film, a resist may be applied on the silicon oxide film, and steps such as exposure, development, and etching may be performed.

  In the exposure apparatus according to the above-described embodiment, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG. In FIG. 6, in a pattern forming process 401, a so-called photolithography process is performed in which the exposure pattern of the present embodiment is used to transfer and expose a mask pattern onto a photosensitive substrate (such as a glass substrate coated with a resist). By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate undergoes steps such as a developing step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step 402.

  Next, in the color filter forming step 402, a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three of R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning line direction. Then, after the color filter forming step 402, a cell assembling step 403 is executed. In the cell assembling step 403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern forming step 401, the color filter obtained in the color filter forming step 402, and the like. In the cell assembly step 403, for example, liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern formation step 401 and the color filter obtained in the color filter formation step 402, and a liquid crystal panel (liquid crystal cell) is obtained. ).

  Thereafter, in a module assembling step 404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display element, since exposure is performed using an exposure apparatus having a projection optical system having high resolution and good aberration correction, an extremely fine circuit pattern is formed. The liquid crystal display element which has can be obtained.

  Since the lens configuration of the projection optical system according to Example 1 is the same as the lens configuration of the projection optical system according to the first embodiment shown in FIG. 1, the description of the projection optical system according to Example 1 includes The reference numerals used in the description of the projection optical system according to the first embodiment are used.

The value of the item of projection optical system PL1 concerning Example 1 is shown. Table 1 shows the optical member specifications of the projection optical system PL1 according to Example 1. In the optical member specifications of Table 1, the surface number of the first column is the order of the surfaces along the light beam traveling direction from the object side, r of the second column is the radius of curvature (mm) of each surface, d is the axial distance between the surfaces, that is, the surface distance (mm), n in the fourth column is the refractive index of the optical member, and ν in the fifth column is the Abbe number. The Abbe number ν is expressed by Equation 1 below.
(Formula 1)
v = {n (365) -1} / {n (363.5) -n (366.5)}
n (365): Refractive index for light with a wavelength of 365 nm n (363.5): Refractive index for light with a wavelength of 363.5 nm n (366.5): Refractive index for light with a wavelength of 366.5 nm Table 2 shows the aspheric coefficients of the lenses having the aspherical lens surfaces used in the catadioptric projection optical system PL1 (reference numerals and surface numbers shown in Table 1). In the first embodiment, the aspherical surface is along the optical axis AX1 from the tangential plane at the apex of the aspherical surface to the position on the aspherical surface at the height y, where y is the height in the direction perpendicular to the optical axis AX1. The distance (sag amount) is z, the apex radius of curvature is r, the cone coefficient is k, the fourth-order aspheric coefficient is A, the sixth-order aspheric coefficient is B, the eighth-order aspheric coefficient is C, 10 When the next aspherical coefficient is D, the 12th-order aspherical coefficient is E, and the 14th-order aspherical coefficient is F, the following expression 2 is obtained.
(Formula 2)
z = (r · y ² ) / [1+ {1− (1 + k) · r ² · y ² } ^1/2 ] + A · y ⁴ + B · y ⁶ + C · y ⁸ + D · y ¹⁰ + E · y ¹² + F · y ¹⁴

(Specifications)
Image side (plate side) numerical aperture (NA): 0.225
Exposure field: 132mm x 132mm
Imaging magnification: 1.25 times Wavelength: i-line ± 1.5 nm
Corresponding value of conditional expression:
f1CC = −336.9 mm, f1CV = 202.4 mm, f2CC = −112.1, f2CV = 138.6 mm, f3CC = −107.4, f3CV = 258.1 mm, f4CC = −643.4 mm
| F1CC | / f1CV = | −336.9 | /202.4=1.7
| F2CC | / f2CV = | −112.1 | /138.6=0.8
| F3CC | / f2CV = | −126.7 | /138.6=0.9
| F4CC | / f3CV = | −643.4 | /258.1=2.5

(Table 1)
(Optical member specifications)
rd n ν
0.000 61.062
1 -684.790 20.000 1.47459 539.3
2 203.168 23.071
3 -156856.5 32.763 1.61246 277.8
4 -291.305 14.762
5 -192.993 30.000 1.47459 539.3
6 -1119.567 1.200
7 1001.058 48.322 1.47459 539.31
8 -423.419 1.200
9 -4237.943 35.000 1.47459 539.3
10 -480.392 1.200
11 1667.943 35.000 1.47459 539.3
12 -840.667 1.200
13 492.686 43.319 1.47459 539.3
14 -2559.172 1.200
15 439.311 37.627 1.47459 539.3
16 9860.836 1.200
17 308.317 33.000 1.47459 539.3
18 151.629 6.894
19 158.990 29.943 1.48677 675.1
20 215.222 68.715
21 -242.129 21.000 1.47459 539.3
22 1845.192 25.271
23 -252.805 23.000 1.47459 539.3
24 1377.659 1.200
25 461.697 31.506 1.48677 675.1
26 -648.072 32.363
27 -157.514 20.536 1.61246 277.8
28 1801.304 1.200
29 889.606 43.519 1.48677 675.1
30 -347.931 1.200
31 -34975.829 50.000 1.47459 539.3
32 -254.880 0.800
33 0.000 0.800
34 429.677 50.000 1.47459 539.3
35 -686.691 1.200
36 344.893 41.914 1.47459 539.3
37 30518.584 1.200
38 290.795 35.701 1.47459 539.3
39 990.711 8.940
40 700.379 30.000 1.48677 675.1
41 -1091.632 3.369
42 -2400.000 50.000 1.61246 277.8
43 214.845 20.450
44 712.085 19.000 1.61246 277.8
45 250.571 26.345
46 -1070.313 20.000 1.48677 675.1
47 346.320 17.937
48 -11579.528 34.624 1.61246 277.8
49 -237.909 6.598
50 -209.173 26.000 1.47459 539.3
51 838.944 106.392
52 5925.001 38.853 1.47459 539.3
53 -461.289 40.284
54 -929.179 37.579 1.47459 539.3
55 -346.762 1.200
56 397.433 35.000 1.47459 539.3
57 1184.591 1.200
58 481.448 49.876 1.47459 539.3
59 -996.883 1.200
60 603.826 30.000 1.47459 539.3
61 391.517 9.943
62 489.536 33.934 1.61246 277.8
63 -1524.921 2.000
64 -1254.246 28.000 1.47459 539.3
65 187.724 59.598

(Table 2)
(Aspheric coefficient)
<R1 R1 side> 2
k = 0.00000
A = -0.93050E-07
B = 0.37523E-11
C = -0.19924E-15
D = 0.91496E-20
E = -0.35429E-24
F = 0.68803E-29

<R2 R2 side> 5
k = 0.00000
A = 0.42250E-08
B = 0.18391E-12
C = 0.10637E-16
D = -0.30580E-23
E = 0.36778E-25
F = -0.49080E-30

<Object side of L11> 21
k = 0.00000
A = 0.24161E-07
B = 0.26570E-12
C = 0.41397E-17
D = 0.40683E-21
E = -0.17752E-25
F = 0.11347E-29

<Object side of L15> 28
k = 0.00000
A = 0.16965E-07
B = -0.34869E-12
C = 0.14527E-17
D = 0.12096E-21
E = -0.35198E-26
F = 0.40342E-31

<Object-side surface of L21> 42
k = 0.00000
A = -0.25747E-07
B = 0.33906E-12
C = 0.59957E-17
D = -0.26047E-21
E = 0.23974E-26
F = 0.25508E-32

<R3 R3 side> 61
k = 0.00000
A = 0.83535E-08
B = -0.82018E-14
C = -0.28860E-18
D = -0.44667E-22

<R4 side of L32> 64
k = 0.00000
A = 0.18360E-07
B = -0.88840E-12
C = 0.25068E-16
D = -0.94472E-21
E = 0.26178E-25
F = -0.32742E-30

7 is a spherical aberration of the projection optical system PL1 according to the present embodiment, FIG. 8 is an astigmatism, and FIG. 9 is an aberration diagram showing distortion. FIG. 10 is an aberration diagram showing coma aberration in the tangential direction and the sagittal direction. 7 to 10, Y indicates the object height, the broken line indicates the aberration at the wavelength of 366.5150 nm, the solid line indicates the aberration at the wavelength of 365.0150 nm, and the alternate long and short dash line indicates the aberration at the wavelength of 363.5150 nm. In FIG. 8, broken line T1, solid line T2, and alternate long and short dash line T3 indicate astigmatism in the tangential direction, and broken line S1, solid line S2, and alternate long and short dash line S3 indicate astigmatism in the sagittal direction. As shown in the aberration diagrams of FIGS. 7 to 10, the spherical aberration, astigmatism, distortion, and coma aberration of the projection optical system PL1 according to the present example are corrected in a well-balanced manner.

  Since the lens configuration of the projection optical system according to Example 2 is the same as the lens configuration of the projection optical system PL2 according to the second embodiment shown in FIG. 2, the description of the projection optical system according to Example 2 will be omitted. The reference numerals used in the description of the projection optical system PL2 according to the second embodiment are used.

The value of the item of projection optical system PL2 concerning Example 2 is shown. In addition, Table 3 shows the optical member specifications of the projection optical system PL2 according to Example 2. Table 4 shows aspheric coefficients of lenses having an aspheric lens surface used in the projection optical system PL2 according to Example 2. These specifications, optical member specifications, and aspheric coefficients will be described using the same reference numerals used in the description of the specifications of the projection optical system PL1 according to the first example.

(Specifications)
Image side (plate side) numerical aperture (NA): 0.225
Exposure field: 132mm x 132mm
Imaging magnification: 1.25 times wavelength: i-line = ± 1.5 nm
Corresponding value of conditional expression:
f1CC = −343.5 mm, f1CV = 202.4 mm, f2CC = −117.0, f2CV = 137.0 mm, f3CC = −107.4, f3CV = 205.8 mm, f4CC = −499.7 mm
| F1CC | / f1CV = | −343.5 | /202.4=1.7
| F2CC | / f2CV = | −117.0 | /137.0=0.9
| F3CC | / f2CV = | −107.4 | /137.0=0.8
| F4CC | / f3CV = | −499.7 | /205.8=2.4

(Table 3)
(Optical member specifications)
rd n ν
0.000 57.020
1 -2046.667 34.175 1.61246 277.8
2 -191.835 1.200
3 -232.623 20.000 1.47459 539.3
4 198.656 58.374
5 -169.899 30.000 1.47459 539.3
6 -346.814 1.200
7 1330.431 45.621 1.47459 539.3
8 -417.528 1.200
9 -2562.876 35.000 1.47459 539.3
10 -446.682 1.200
11 1934.475 35.000 1.47459 539.3
12 -786.904 1.200
13 430.524 48.083 1.47459 539.3
14 -2395.410 1.200
15 459.078 35.669 1.47459 539.3
16 5525.435 1.200
17 339.888 33.000 1.47459 539.3
18 185.473 8.417
19 204.420 36.708 1.48677 675.1
20 276.835 43.964
21 -297.445 21.000 1.47459 539.3
22 3033.749 17.946
23 -409.833 23.000 1.47459 539.3
24 567.221 1.200
25 329.302 29.000 1.48677 675.1
26 3221.466 42.528
27 -154.909 20.000 1.61246 277.8
28 1043.327 2.734
29 793.521 38.649 1.48677 675.1
30 -458.824 1.200
31 22770.679 48.774 1.47459 539.3
32 -265.910 0.800
33 0.000 0.800
34 869.793 49.257 1.47459 539.3
35 -381.123 1.200
36 289.531 50.000 1.47459 539.3
37 -9195.608 1.200
38 254.495 40.444 1.47459 539.3
39 956.544 8.307
40 889.331 30.000 1.48677 675.1
41 -804.881 2.016
42 -1805.207 50.000 1.61246 277.8
43 174.182 31.784
44 12408.567 19.000 1.61246 277.8
45 342.583 28.369
46 -398.216 20.000 1.48677 675.1
47 645.189 16.193
48 -11422.928 39.178 1.61246 277.8
49 -226.893 10.152
50 -187.066 26.000 1.47459 539.3
51 1291.299 58.267
52 -19912.524 39.608 1.47459 539.3
53 -417.812 1.200
54 5631.381 50.000 1.47459 539.3
55 -375.662 13.757
56 441.333 49.298 1.47459 539.3
57 -1730.882 1.200
58 349.931 50.000 1.47459 539.3
59 -2220.787 1.200
60 642.568 30.000 1.47459 539.3
61 225.881 44.504
62 -566.770 28.000 1.47459 539.3
63 255.449 21.787
64 1615.484 28.000 1.61246 277.8
65 -429.045 30.424

(Table 4)
(Aspheric coefficient)
<R5 R5 side> 4
k = 0.00000
A = -0.78144E-07
B = 0.18596E-11
C = -0.71320E-16
D = 0.21022E-20
E = -0.18373E-25
F = -0.81639E-30

<R37 R6 side> 5
k = 0.00000
A = -0.25071E-08
B = -0.99507E-13
C = -0.78702E-17
D = 0.66221E-21
E = -0.99170E-25
F = 0.43965E-29

<Object side of L45> 21
k = 0.00000
A = 0.11392E-07
B = 0.18474E-12
C = 0.49560E-17
D = 0.13495E-21
E = -0.13127E-26
F = 0.40903E-30

<L48 image side> 28
k = 0.00000
A = 0.15061E-07
B = -0.33294E-12
C = 0.26072E-17
D = 0.56265E-22
E = -0.20110E-26
F = 0.24313E-31

<Object side surface of L55> 42
k = 0.00000
A = -0.27830E-07
B = 0.44582E-12
C = 0.72481E-17
D = -0.40860E-21
E = 0.45764E-26
F = 0.12006E-31

<R64 R7 side> 61
k = 0.00000
A = 0.94023E-08
B = 0.25789E-12
C = 0.34564E-17
D = 0.47054E-21

<R8 R8 side> 62
k = 0.00000
A = 0.31353E-07
B = -0.11384E-11
C = 0.25101E-16
D = 0.23353E-21
E = -0.62800E-25
F = 0.16592E-29

11 is a spherical aberration of the projection optical system PL2 according to the present embodiment, FIG. 12 is an astigmatism, and FIG. 13 is an aberration diagram showing distortion. FIG. 14 is an aberration diagram showing coma aberration in the tangential and sagittal directions. 11 to 14, Y indicates the object height, the broken line indicates the aberration at the wavelength of 366.5150 nm, the solid line indicates the aberration at the wavelength of 365.0150 nm, and the alternate long and short dash line indicates the aberration at the wavelength of 363.5150 nm. In FIG. 12, broken line T1, solid line T2, and alternate long and short dash line T3 indicate astigmatism in the tangential direction, and broken line S1, solid line S2, and alternate long and short dash line S3 indicate astigmatism in the sagittal direction. As shown in the aberration diagrams of FIGS. 11 to 14, the spherical aberration, astigmatism, distortion, and coma aberration of the projection optical system PL2 according to the present example are corrected in a well-balanced manner.

  Since the lens configuration of the projection optical system according to Example 3 is the same as the lens configuration of the projection optical system PL3 according to the third embodiment shown in FIG. 3, the description of the projection optical system according to Example 3 will be omitted. The reference numerals used in the description of the projection optical system PL3 according to the third embodiment are used.

The value of the item of projection optical system PL3 concerning Example 3 is shown. Table 5 shows the optical member specifications of the projection optical system PL3 according to Example 3. Table 6 shows aspheric coefficients of lenses having an aspheric lens surface used in the projection optical system PL3 according to Example 3. These specifications, optical member specifications, and aspheric coefficients will be described using the same reference numerals used in the description of the specifications of the projection optical system PL1 according to the first example.

(Specifications)
Image side (plate side) numerical aperture (NA): 0.3
Exposure field: 100mm x 100mm
Imaging magnification: 1.00 times Wavelength: i-line ± 1.5 nm
Corresponding value of conditional expression:
f1CC = −488.2 mm, f1CV = 232.0 mm, f2CC = −125.8, f2CV = 148.3 mm, f3CC = −174.5, f3CV = 261.1 mm, f4CC = −475.4 mm
| F1CC | / f1CV = | −488.2 | /232.0=2.1
| F2CC | / f2CV = | −125.8 | /148.3=0.8
| F3CC | / f2CV = | −174.5 | /148.3=1.2
| F4CC | / f3CV = | −475.4 | /261.1=1.8

(Table 5)
(Optical member specifications)
rdn ν
0.000 70.437
1 -258.788 20.000 1.47459 539.3
2 274.653 18.207
3 -6538.780 41.162 1.61246 277.8
4 -221.553 13.940
5 -168.297 30.000 1.47459 539.3
6 -345.640 1.200
7 813.475 46.486 1.47459 539.3
8 -585.512 1.200
9 -1747.808 35.000 1.47459 539.3
10 -431.028 1.200
11 1253.815 35.000 1.47459 539.3
12 -1430.254 1.200
13 463.700 34.496 1.47459 539.3
14 2402.187 1.200
15 379.226 34.506 1.47459 539.3
16 1282.827 1.200
17 254.389 33.000 1.47459 539.3
18 160.112 17.820
19 207.751 50.000 1.48677 675.1
20 210.288 51.651
21 -201.735 27.621 1.47459 539.3
22 -4048.406 22.956
23 -241.363 23.000 1.47459 539.3
24 -3570.592 1.200
25 465.673 35.796 1.48677 675.1
26 -495.113 28.044
27 -170.153 20.000 1.61246 277.8
28 1582.126 1.200
29 806.879 41.226 1.48677 675.1
30 -400.599 1.200
31 -15372.560 47.978 1.47459 539.3
32 -270.081 0.800
STO 0.000 0.80000
34 434.897 50.000 1.47459 539.3
35 -885.506 1.200
36 360.669 43.805 1.47459 539.3
37 -10365.946 1.200
38 306.291 35.852 1.47459 539.3
39 1025.040 26.251
40 1019.770 30.000 1.48677 675.1
41 -722.299 2.022
42 -1488.547 28.326 1.61246 277.8
43 238.635 30.461
44 -2099.957 19.000 1.61246 277.8
45 307.358 29.963
46 -656.603 20.000 1.48677 675.1
47 556.183 16.834
48 20591.930 45.120 1.61246 277.8
49 -382.740 46.076
50 -184.247 26.000 1.47459 539.3
51 -237.848 1.200
52 -740.480 35.000 1.47459 539.3
53 -324.641 55.838
54 -912.915 35.000 1.47459 539.3
55 -391.474 1.200
56 438.446 42.875 1.47459 539.3
57 -19672.146 1.200
58 386.069 48.971 1.47459 539.3
59 -1959.644 1.200
60 300.724 30.000 1.47459 539.3
61 208.442 19.441
62 334.687 45.976 1.61246 277.8
63 -929.569 4.915
64 -457.896 28.000 1.47459 539.3
65 149.757 53.757

(Table 6)
(Aspheric coefficient)
<R9 R9 side> 2
k = 0.00000
A = -0.80274E-07
B = 0.40391E-11
C = -0.22362E-15
D = 0.11469E-19
E = -0.44357E-24
F = 0.84142E-29

<R10 R10 surface> 5
k = 0.00000
A = 0.59734E-08
B = 0.27520E-12
C = 0.10629E-16
D = 0.28403E-21
E = 0.13932E-25
F = 0.51539E-30

<Object side surface of L80> 21
k = 0.00000
A = 0.36565E-07
B = 0.45119E-12
C = 0.25889E-17
D = 0.45082E-21
E = -0.10539E-25
F = 0.12053E-29

<Image side surface of L83> 28
k = 0.00000
A = 0.19801E-07
B = -0.47922E-12
C = 0.24845E-17
D = 0.20238E-21
E = -0.64653E-26
F = 0.74575E-31

<Object side surface of L90> 42
k = 0.00000
A = -0.27082E-07
B = 0.31515E-12
C = 0.68453E-17
D = -0.24515E-21
E = 0.14862E-26
F = 0.18302E-31

<R11 R11 surface> 61
k = 0.00000
A = 0.74163E-08
B = 0.15618E-12
C = 0.19223E-17
D = 0.84163E-22

<R12 side of L101> 64
k = 0.00000
A = 0.57467E-07
B = -0.34532E-11
C = 0.18480E-15
D = -0.92365E-20
E = 0.32461E-24
F = -0.55361E-29

FIG. 15 is a spherical aberration diagram of the projection optical system PL3 according to the present example, FIG. 16 is an astigmatism diagram, and FIG. 17 is an aberration diagram showing distortion aberration. FIG. 18 is an aberration diagram showing coma aberration in the tangential direction and the sagittal direction. 15 to 18, Y indicates the object height, the broken line indicates the aberration at the wavelength of 366.5150 nm, the solid line indicates the aberration at the wavelength of 365.0150 nm, and the alternate long and short dash line indicates the aberration at the wavelength of 363.5150 nm. In FIG. 16, broken line T1, solid line T2, and alternate long and short dash line T3 indicate astigmatism in the tangential direction, and broken line S1, solid line S2, and alternate long and short dash line S3 indicate astigmatism in the sagittal direction. As shown in the aberration diagrams of FIGS. 15 to 18, the spherical aberration, astigmatism, distortion, and coma aberration of the projection optical system PL3 according to the present example are corrected in a well-balanced manner.

It is a figure which shows the lens structure of the projection optical system concerning 1st Embodiment. It is a figure which shows the lens structure of the projection optical system concerning 2nd Embodiment. It is a figure which shows the lens structure of the projection optical system concerning 3rd Embodiment. It is a figure which shows schematic structure of the projection exposure apparatus concerning 4th Embodiment. It is a flowchart of the method of manufacturing the semiconductor device as a micro device concerning an embodiment. It is a flowchart of the method of manufacturing the liquid crystal display element as a microdevice concerning embodiment. FIG. 6 is an aberration diagram showing spherical aberration of the projection optical system according to Example 1; FIG. 6 is an aberration diagram showing astigmatism of the projection optical system according to Example 1; FIG. 6 is an aberration diagram illustrating distortion of the projection optical system according to Example 1; FIG. 6 is an aberration diagram showing coma aberration of the projection optical system according to Example 1; FIG. 10 is an aberration diagram showing spherical aberration of the projection optical system according to Example 2. FIG. 6 is an aberration diagram showing astigmatism of the projection optical system according to Example 2. FIG. 6 is an aberration diagram showing distortion of the projection optical system according to Example 2. FIG. 6 is an aberration diagram showing coma aberration of the projection optical system according to Example 2. FIG. 10 is an aberration diagram showing spherical aberration of the projection optical system according to Example 3; FIG. 10 is an aberration diagram showing astigmatism of the projection optical system according to Example 3; FIG. 10 is an aberration diagram showing distortion of the projection optical system according to Example 3; FIG. 10 is an aberration diagram showing coma aberration of the projection optical system according to Example 3;

Explanation of symbols

  PL, PL1, PL2, PL3 ... projection optical system, M, M1, M2, M3 ... mask, P, P1, P2, P3 ... plate, GN1 to GN4, GN11 to GN14, GN21 to GN24 ... negative lens group, GP1 to GP1 GP3, GP11-GP13, GP21-GP23 ... positive lens group, L1-L32, L35-L66, L70-L101 ... lens, IL ... illumination optical system, MST ... mask stage, PST ... plate stage, 6 ... control unit, 8 ... mask stage drive unit, 10 ... substrate stage drive unit.

Claims (12)

In a projection optical system that projects an image of a first object onto a second object,
A first negative lens group having negative refractive power arranged in order from the first object side;
A first positive lens group having positive refractive power;
A second negative lens group having negative refractive power;
A second positive lens group having positive refractive power;
A third negative lens group having negative refractive power;
A third positive lens group having positive refractive power;
A fourth negative lens group having negative refractive power;
With
At least one negative lens group of the first negative lens group and the fourth negative lens group includes a first refractive member having a negative refractive power and a second refractive member having a negative refractive power. Characteristic projection optical system. The first refractive member has a first concave surface;
The second refractive member has a second concave surface;
The projection optical system according to claim 1, wherein the first concave surface and the second concave surface are arranged so that the concave surfaces face each other in opposite directions.   3. The projection according to claim 1, wherein at least one negative lens group of the first concave lens group and the fourth lens group includes at least one refractive member having an aspherical refractive surface. Optical system. When the focal length of the first negative lens group is f1CC and the focal length of the first positive lens group is f1CV,
1 <| f1CC | / f1CV <3
The projection optical system according to any one of claims 1 to 3, wherein: When the focal length of the fourth negative lens group is f4CC and the focal length of the third positive lens group is f3CV,
1 <| f4CC | / f3CV <3
The projection optical system according to claim 1, wherein the projection optical system satisfies the following. When the projection magnification for projecting the image of the first object onto the second object is MAG,
MAG ≧ 1
The projection optical system according to claim 1, wherein the projection optical system satisfies the following. When the focal length of the second negative lens group is f2CC and the focal length of the second positive lens group is f2CV,
0.5 <| f2CC | / f2CV <1.5
The projection optical system according to any one of claims 1 to 6, wherein: When the focal length of the third negative lens group is f3CC and the focal length of the second positive lens group is f2CV,
0.5 <| f3CC | / f2CV <1.5
The projection optical system according to claim 1, wherein the projection optical system satisfies the following. A projection optical system according to any one of claims 1 to 8,
A substrate stage for holding a photosensitive substrate as the second object,
An exposure apparatus that projects an image of a pattern on the first object onto the photosensitive substrate through the projection optical system.   The exposure apparatus according to claim 9, wherein the photosensitive substrate has an outer diameter larger than 500 mm.   The exposure apparatus according to claim 9 or 10, wherein the exposure is performed with the photosensitive substrate being stationary with respect to the projection optical system. An exposure step of exposing a predetermined pattern on a photosensitive substrate using the exposure apparatus according to any one of claims 9 to 11,
A developing step of developing the photosensitive substrate exposed by the exposing step;
A method for manufacturing a microdevice, comprising:

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