JP2007066803A - Pattern correcting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pattern correcting device capable of accurately forming the deposition layer of correction liquid in a defective portion. <P>SOLUTION: In this pattern correcting device, based on a response time Td from when an order to open or close a shutter 31 is given until the shutter 31 is brought into an open state or a closed state, and the relative movement speed v of an application nozzle 30 and a substrate 34, a response delay distance x covered by a shutter 31 within the response time Td is found, and when the application nozzle 30 reaches a position which is the response delay distance x on this side of the starting point P1 or the terminal point P2 of a section B for a deposition film 36 to be plotted, the order to open of close the shutter 31 is given. Therefore, the moment the application nozzle 30 reaches the starting point P1 of the terminal point P2, the shutter 30 is brought into the open state or the closed state. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a pattern correction apparatus, and more particularly to a pattern correction apparatus that corrects a defective portion of a fine pattern formed on a substrate. More specifically, the present invention relates to a pattern correction apparatus that corrects an open defect of an electrode, a rib (partition) defect of a plasma display, and the like that occur in a manufacturing process of a flat panel display.

   In recent years, with the increase in size and definition of flat panel displays such as plasma displays, liquid crystal displays, and EL displays, the probability of defects in electrodes and ribs on the glass substrate has increased, and the yield has been improved. Therefore, a method for correcting the defect has been proposed.

  For example, on the rear glass substrate of the plasma display, ribs having a height of about 150 μm and a width of about 60 to 100 μm are formed at a pitch of several hundreds of μm. If a part of this rib is missing, apply the correction paste to the application needle and apply it to the defect, and stack the correction paste while firing to prevent the correction paste from dripping, and protrude in the rib width direction. The cut portion is scraped off with a laser cut and a scratch needle, and the raised portion higher than the normal height of the rib is flattened by the squeegee function to correct the rib (for example, see Patent Document 1).

Electrodes are formed on the surface of the glass substrate of the liquid crystal display. When this electrode is disconnected, the conductive paste adhered to the tip of the application needle is applied to the disconnected portion, and applied multiple times while shifting the application position in the length direction of the electrode to correct the electrode (for example, Patent Documents) 2).
JP 2000-299059 A JP-A-8-292442

  However, in the method of correcting the rib, the coating needle reciprocates between the rib defect portion and the paste tank many times to fill the rib defect portion with the correction paste, so that the larger the defect portion, the longer the application time. There is a problem. In addition, a cutting laser part and a scratch mechanism that removes the correction paste that protrudes from the rib width, a mechanism that sucks out the foreign matter generated by this, and a mechanism that reshapes the correction part that has risen from the normal part using a squeegee mechanism are required The configuration becomes complicated.

  Also, in the method of correcting the electrode, since the application needle is replenished between the electrode disconnection portion and the paste tank many times and the application paste is applied while replenishing the conductive paste, the longer the disconnection portion, the longer the time required for correction. become longer. In addition, since the paste is applied in a shape in which circular application portions are arranged in one row, it is necessary to perform laser cutting processing on the portion protruding from the width of the electrode after application.

  Therefore, the inventor of the present application sprays the mist-like correction liquid through the application nozzle in a state where the substrate is heated at least in the range including the defective portion, and opens and closes the shutter between the application nozzle and the substrate, A pattern correction apparatus has been proposed in which correction liquid is sprayed onto a defective portion for correction (see Japanese Patent Application No. 2005-50766, for example). The coating nozzle and the substrate are moved relative to each other, and the shutter is opened when the coating nozzle reaches the starting point of the defective portion, and the shutter is closed when the coating nozzle reaches the end point of the defective portion.

  In this pattern correction device, it is possible to squirt while replenishing the correction liquid, so that the defective portion can be corrected quickly compared to the conventional case where the coating needle reciprocates between the defective portion and the paste tank many times. Can do. Further, since the deposited layer is formed while heating the defect portion and drying the correction liquid, the deposited layer can be formed in a certain shape. Therefore, there is no need to provide a mechanism for removing excess correction paste as in the prior art, so that the apparatus configuration can be simplified.

  However, in this pattern correction device, since a response time is required from when the shutter opening command or closing command is issued until the shutter is actually opened or closed, the coating nozzle reaches the start point or end point of the defective portion. If a command to open or close the shutter is issued at that time, the shutter is opened or closed after the coating nozzle has passed the start point or end point of the defective portion, and it is impossible to accurately form a correction liquid deposition layer on the defective portion. It is also assumed.

  Therefore, a main object of the present invention is to provide a pattern correction device capable of accurately forming a deposition layer of a correction liquid in a defect portion.

  A pattern correction device according to the present invention is a pattern correction device for correcting a defective portion of a fine pattern formed on a substrate, and includes a heating device for heating the substrate in a range including at least the defective portion, and a mist-like correction liquid And a deposition device that corrects the defective portion by depositing the correction liquid on the defective portion, and the deposition device includes a coating nozzle that sprays the mist-shaped correction liquid, and the coating nozzle and the substrate. A positioning device that relatively moves the deposition apparatus and the substrate so that the coating nozzle moves above the defective portion, and issues a command to open or close the shutter. From the response time until the shutter is opened or closed and the relative moving speed of the coating nozzle and the substrate, the response delay distance that the shutter moves within the response time is obtained, and the starting point of the defective portion or Characterized in that it comprises a control device outputs a command or closing command to open the shutter when the application nozzle only in front of the position response delay distance from point has reached.

  Preferably, the relative movement speed of the coating nozzle and the substrate is constant.

  In the pattern correction apparatus according to the present invention, the response time is based on the response time from when the shutter opening command or closing command is issued until the shutter is opened or closed, and the relative movement speed of the coating nozzle and the substrate. A response delay distance within which the shutter moves is obtained, and a command to open or close the shutter is issued when the coating nozzle reaches a position before the response delay distance from the start point or end point of the defective portion. Accordingly, since the shutter is opened or closed at the moment when the coating nozzle reaches the starting point or the end point of the defective portion, it is possible to accurately form the deposition layer of the correction liquid on the defective portion.

  Preferably, the relative movement speed of the coating nozzle and the substrate is constant. In this case, the response delay distance of the shutter can be easily obtained.

  FIG. 1 is a diagram showing an overall configuration of a pattern correction apparatus according to an embodiment of the present invention. In FIG. 1, a pattern correction apparatus 1 includes an observation optical system 2 that observes the surface of a substrate, a monitor 3 that displays an observed image, and a laser beam that is irradiated through the observation optical system 2 to cut unnecessary portions. And a fine particle deposition apparatus 5 for depositing fine particles on the defect portion by spraying the correction liquid in which the correction material, which is a fine particle of several μm or less and dispersed in the solvent, is atomized and sprayed to the defect portion. A substrate heating unit 6 that heats the defective part to vaporize the solvent in the mist-like correction liquid, an image processing unit 7 that recognizes the defective part, a host computer 8 that controls the entire apparatus, and an apparatus mechanism unit And a control computer 9 for controlling the operation. In addition, an XY stage 10 that moves a substrate having a defective portion in the XY direction (horizontal direction), a chuck portion 11 that holds the substrate on the XY stage 10, and the observation optical system 2 and the particle deposition apparatus 5 are moved in the Z direction. A Z stage 12 that is moved in the (vertical direction) is provided.

FIG. 2 is a cross-sectional view showing a main part of the pattern correction apparatus shown in FIG. Examples of the defect to be corrected include an open defect portion of an electrode, a rib defect portion of a plasma display, and a white defect of a color filter. For example, the substrate 14 on which the electrode 13 having the open defect portion 13 a is formed is fixed to the chuck portion 11, and the chuck portion 11 is moved in the XY direction by the XY stage 10. It is also possible to incorporate a heater for heating the entire substrate 14 in the chuck unit 11 and use it together with the substrate heating unit 6 that can partially heat the range including the defective portion 13a from the upper side of the substrate 14. When the substrate 14 is large, it is necessary to heat the entire substrate 14 by incorporating a heater in the chuck unit 11. In such a case, it is preferable to use only the substrate heating unit 6. preferable. As the substrate heating unit 6, an LD light source, a CO ₂ laser, or the like can be used.

  The fine particle deposition apparatus 5 has a correction material used for correction as a fine particle of several μm or less, and a spray unit 15 that atomizes the correction liquid that is liquefied by uniformly dispersing it in a solvent, and the correction made in the form of a mist The decompression unit 16 that reduces the pressure of the liquid flow, the heating unit 17 that heats the decompressed mist-like correction liquid, and the heated mist-like correction liquid converges and is ejected to the defect part 13a, and the defect part 13a And a head portion 18 for depositing fine particles.

  A correction liquid 20 is injected into the container 19 of the spray unit 15. When the open defect portion 13a of the electrode 13 is corrected, a silver paste, a gold paste, or a transparent electrode material fine particle dispersed in a solvent is used as the correction liquid 20. Further, as the correction liquid 20, a metal complex solution containing a compound in which ions and molecules are bonded around the central metal may be used. Further, when correcting a rib chip defect of a plasma display, a glass 20 that is a rib material is uniformly dispersed in a solvent as the correction liquid 20.

  A spray nozzle 21 is provided in the center of the container 19. The lower part of the spray nozzle 21 is immersed in the correction liquid 20. When atomizing gas (for example, nitrogen gas) is supplied to the spray nozzle 21 from the outside of the container 19, the atomizing gas flow rate at the jet outlet 21 a at the top of the spray nozzle 21 is increased and the atmospheric pressure is lowered from the surroundings. The correction fluid 20 is sucked up from the suction port 21b, and when the atomized gas is ejected from the ejection port 21a, the correction fluid 20 is also scattered around the ejection port 21a and atomized. This principle is the same as the principle of normal spraying, and is the application of Bernoulli's principle. Large mist particles fall into the container 19 or collide with the inner wall surface of the container 19 and remain in the container 19, and only fine mist particles are sent to the decompression unit 16.

  As the atomizing gas, an inert gas such as nitrogen gas is preferably used so that the correction liquid 20 is not oxidized, but air may be used as long as the correction liquid 20 does not oxidize. Further, the atomizing gas is used to make the correction liquid 20 in an atomized state. However, if the correction material in the correction liquid 20 is an ultrafine particle such as a submicron, an atomizer using an ultrasonic vibrator may be used. I do not care.

  In addition, when the fine particles of the correction material in the correction liquid 20 are likely to precipitate over time, a stirrer is placed in the container 19 and a magnetic stirrer is installed at the bottom of the container 19 to constantly agitate the correction liquid 20. You may do it.

  The decompression unit 16 is the same as a generally known virtual impactor, and classifies the mist particles of the correction liquid 20. Small mist particles are removed here, and the pressure of the mist particle flow is reduced. The decompression unit 16 includes a nozzle unit 22, a gas collection unit 23, an exhaust pipe 24, and an outer pipe 25. The nozzle portion 22 and the air collecting portion 23 are opposed to each other while maintaining a certain gap 26. Of the mist particles ejected from the nozzle unit 22, mist particles having a high flow velocity or heavy mist particles are supplied to the next stage through the air collecting portion 23, while mist particles having a low flow velocity, light mist particles, or the like are exhausted. It is discharged by an exhaust pump (not shown) through 24.

  The heating unit 17 includes a pipe 27 that connects the air collecting unit 23 and the next stage. A heater 28 and a temperature sensor 29 are attached to the outer peripheral portion of the pipe 27, and the pipe 27 is controlled so as to reach a set temperature, and has a function of heating fog particles. By heating the mist particles, the flow and scattering when the mist particles adhere to the defect portion 13a are suppressed. The heater 28 is covered with a heat insulating member (not shown). Further, depending on the correction liquid 20, as shown in FIG. 3, the heating unit 17 can be omitted.

  Returning to FIG. 2, the head unit 18 covers the periphery of the mist particles with a sheath gas (for example, nitrogen gas), converges the flow of the mist particles, and mists from the coating nozzle 30 at the lower end of the head unit 18 toward the defect portion 13 a. Eject particles. The inner diameter of the jet nozzle of the coating nozzle 30 is about 100 to 200 μm, and the flow of the mist particles can be converged to about 1/10 of the inner diameter of the jet nozzle by the sheath gas.

  The shutter 31 receives the mist particles ejected from the coating nozzle 30 so that the mist particles are not ejected onto the substrate 14 before the defect correction is performed. At the start of correction, the shutter 31 is opened to correct the defect. Simultaneously with the completion of the correction, the shutter 31 is moved between the tip of the coating nozzle 30 and the substrate 14 to receive fog particles. The shutter 31 may have a function of sucking the fog particles ejected from the application nozzle 30.

  Next, a method for using this pattern correction apparatus will be described. 4A is a diagram showing an open defect portion 13a of the electrode 13 formed on the surface of the substrate 14, and FIG. 4B is a diagram showing a process in the middle of correcting the open defect portion 13a. The XY stage 10 is driven to move the coating nozzle 30 and the substrate 14 relatively to deposit fine particles of the correction material from the end of the electrode 13 on one side of the defect 13a toward the end of the electrode 13 on the other side. I will let you. At this time, the distance between the tip of the coating nozzle 30 and the surface of the substrate 14 can be corrected in a non-contact manner while maintaining a constant distance (around 5 mm).

  In order to keep the line width of the deposition layer of the fine particles constant, a part of the substrate 14 or the entire substrate 14 is kept at an optimum temperature within a range including the defect portion 13a, and the flow rate and pressure reduction of the atomizing gas supplied to the spraying portion 15 are maintained. It is necessary to manage the exhaust gas flow rate of the portion 16 and the sheath gas flow rate of the head portion 18 to optimum values. The distance between the tip of the coating nozzle 30 and the surface of the substrate 14 has little influence on the line width of the fine particle deposition layer.

  FIG. 4C is a diagram illustrating a state where the repair of the defective portion 13a is completed. The correction unit 32 made of a fine particle deposition layer may be further baked by the substrate heating unit 6, or the entire substrate 14 may be baked again in a separate furnace. When the corrected film thickness is insufficient, a plurality of fine particle layers may be stacked. In addition, when the line width of the correction unit 32 is larger than the line width of the electrode 13 or fine particles adhere to portions other than the correction unit 32, the unnecessary portion may be laser-cut using the laser unit 4.

  Further, as shown in FIG. 5 and FIGS. 6A to 6D, the rib defect defect portion 35a in which a part of the rib 35 formed on the surface of the rear glass substrate 34 of the plasma display is missing is corrected. Is also possible. In FIG. 6A, first, the XY stage is positioned considerably before the defect portion 35a so that the defect portion 35a and the head portion 18 of the particle deposition apparatus 5 can be moved relative to each other beyond the width of the rib chip defect portion 35a. 10 is moved to start moving the rear glass substrate 34. At this time, the shutter 31 is located immediately below the application nozzle 30, is in a state of receiving the mist-like correction liquid 20 ejected from the application nozzle 30 (shutter closed state), and is not drawn on the rear glass substrate 34. Further, the substrate heating unit 6 heats a range wider than the area where the coating nozzle 30 draws.

  Next, as shown in FIG. 6B, the shutter 31 is opened slightly before the rib chip defect 35a, and the fog particles of the correction liquid 20 are converged on the normal rib top surface before the rib chip defect 35a. Start drawing. In this state, the movement of the rear glass substrate 34 is continued, and the mist particles of the correction liquid 20 are sprayed over the entire rib defect defect portion 35a.

  Next, as shown in FIG. 6C, drawing of the entire rib chip defect portion 35a is finished, and the shutter 31 is closed at a position where a little drawing is performed on a normal rib top surface. Even after the shutter 31 is closed, the rear glass substrate 34 continues to move, and as shown in FIG. 6D, the XY stage 10 is stopped at a position away from the point where drawing is stopped, and the rear glass substrate 34 moves. To stop. 5A to 5D, the deposited layer 36_1 drawn on the normal rib top surfaces slightly longer than the width of the rib chip defect 35a and on the normal rib top surfaces before and after the rib chip defect 35a is formed. It is formed.

  Thereafter, the same drawing is performed from the position shown in FIG. 6D to return to FIG. 6A, whereby the drawing is performed for the first time and the stacking is completed. If this operation is performed a plurality of times (n), and the stacking is finished when the deposited layer 36 stacked on the rib chip defect 35a becomes higher than the rib top surface, the deposited layer 36 is as shown in FIG. Shape.

  After the lamination, the deposited layer 36 laminated on the rib defect portion 35a is partially fired, or the entire back glass substrate 34 is fired in a furnace. Thereafter, the correction is completed by polishing the excess protruding portion with, for example, a polishing tape until the height becomes equal to the normal rib top surface 35b.

  In this example, since the deposition layers 36_1 to 36_n can be stacked while being heated to some extent by heating with the substrate heating unit 6, the stacking width is uniform and does not collapse. Therefore, the rib width reshaping step after lamination can be omitted.

  The deposited film thickness at one time is about 1 μm although it depends on the control of the correction material fine particle deposition apparatus 5, and the deposition layers 36_2 to 36_n are measured while measuring the height of the correction part with a measuring instrument (not shown). If stacked, it is possible to determine whether the top surface of the correction portion can be stacked with the normal top surface of the rib 35 higher than the normal top surface of the rib 35.

  As described above, in this pattern correction apparatus, the mist-like correction liquid 20 is jetted onto the heated defect portions 13a and 35a, fine particles of the correction material are deposited on the defect portions 13a and 35a, and the deposited layer is formed into the defect portions 13a and 35a. Since the drawing is performed on 35a, the correction time can be shortened as compared with the conventional case where the coating needle is used.

  In this pattern correction apparatus, the substrate 14 is moved by the XY stage 10 and the deposited layer is drawn. However, the deposited layer may be drawn by moving the fine particle deposition apparatus 5 without moving the substrate 14.

  Further, as the XY stage 10, various stage types such as a uniaxial stage stacked in the XY direction and a gantry system in which the substrate is fixed and the X axis and the Y axis are separated and driven can be considered. It is not limited to the stage.

  Next, a shutter control method that is a feature of the pattern correction apparatus 1 will be described. FIG. 8A is a front cross-sectional view showing the configuration of the shutter mechanism of the pattern correction device 1, FIG. 8B is a side view thereof, and FIG. 8A is a view in FIG. It is a VIIIA-VIIIA line sectional view. 8A and 8B, the closed shutter 31 is disposed immediately below the application nozzle 31 so as to face the tip of the application nozzle 31. On the surface of the shutter 31, a recess 31 a for receiving a flow of mist particles ejected from the application nozzle 30 is formed. The shutter 31 may be provided with a suction mechanism for sucking mist particles ejected from the application nozzle 30. The shutter 31 is fixed to the lower end portion of the dog-shaped column 40 that supports the shutter 31. The shutter 31 and the support column 40 may be integrally formed, or may be fixed with screws or the like. The upper end of the support column 40 is fixed to the lower end of the L-shaped movable unit 41 with a screw 42.

  The movable portion 41 is fixed to a bed 43 a of a linear slide bearing 43 using a ball, the table 43 b is fixed to the lower end portion of the fixed base 44, and the side surface of the fixed base 44 is fixed to the particle deposition apparatus 5. A linear motion electromagnetic solenoid 45 is fixed to the fixed base 44, and its output shaft 45 a is inserted into a hole 41 a opened in the upper end portion of the movable portion 41 and fixed to the movable portion 41 by a set screw 46. The connector 45b of the direct acting electromagnetic solenoid 45 is connected to the control device (computers 8 and 9 in FIG. 1) via the connector 45b. With this configuration, the shutter 31 can be moved left and right in FIG. 8B by driving the direct acting electromagnetic solenoid 45, and opens and closes the flow path of the mist particles.

  Since the output shaft 45a of the direct acting electromagnetic solenoid 45 is supported by the linear slide bearing 43, no load is applied to the output shaft 45a, the life of the direct acting electromagnetic solenoid 45 can be extended, and rigidity can be increased. The shutter 31 can be moved smoothly and smoothly. The moving distance of the shutter 31 is determined by the stroke of the direct acting electromagnetic solenoid 45, and the stroke is set to 3 mm, which is substantially equal to the width of the shutter 31.

  If a two-position latch type with a built-in electromagnet is used as the direct acting electromagnetic solenoid 45, the time for energizing the solenoid can be shortened and heat generation can be suppressed. Further, the shutter 31 may be driven by an actuator other than the direct acting electromagnetic solenoid 45.

  By the way, in the shutter mechanism shown in FIGS. 8A and 8B, due to the responsiveness of the direct acting electromagnetic solenoid 45, the shutter 31 is actually opened or closed after a command to open or close the shutter 31 is given. There is a delay Td before the state is reached. Although this response delay Td depends on the actuator used, in this example, it is about 30 ms. For example, when the deposition drawing is performed with the velocity v of the XY stage 10 set to 20 mm / s, the positional deviation x due to the response delay Td is x = v × Td = 20 × 0.03 = 0.6 mm.

  FIG. 9 is a diagram for explaining the deposition drawing process in which the response delay Td of the shutter 31 is not corrected and its problems. In FIG. 9, when there is a deposition drawing command section B to be deposited and drawn, the substrate 34 is moved by driving the XY stage 10 from before this section B, or the coating nozzle 30 is moved using a secondary shaft (not shown).

  First, the first deposition drawing will be described. The relative position between the coating nozzle 30 and the substrate 34 is obtained by counting encoder pulses (not shown) of the XY stage 10 with a counter, and the position can be grasped from the counter information. Outputs an opening / closing command for the shutter 31. The shutter is opened and closed while the speed of the XY stage 10 is constant.

  When a command to open the shutter 31 at the start point P1 of the deposition drawing command section B is given, from the position (P1 + x) delayed by the response time Td of the shutter 31 and the response delay distance x of the shutter obtained from the speed v of the XY stage 10. Deposition drawing is started. Further, when a command to close the shutter 31 is given at the end point P2 of the deposition drawing command section B, the deposition drawing is similarly performed up to the position (P2 + x) delayed by the response delay distance x of the shutter 31. That is, the first drawing line has the same length as the deposition drawing command section B, but is deposited at a position shifted from the deposition drawing command section B by x on the left side in FIG.

  Next, the second deposition drawing will be described. Since deposition is performed while the XY stage 10 returns to the original position evenly, deposition drawing is performed from the left side to the right side in FIG. When a command to open the shutter 31 at a point P2 in the deposition drawing command section B is given, a position (P2-x) delayed by a shutter response delay distance x obtained from the response time Td of the shutter 31 and the speed v of the XY stage 10. Deposition drawing is started from. Further, when a command to close the shutter 31 is given at the point P1 of the deposition drawing command section B, similarly, the deposition drawing is performed up to a position (P1-x) delayed by the response delay distance x of the shutter. That is, the second drawing line has the same length as the deposition drawing command section B, but is deposited at a position shifted from the deposition drawing command section B by x on the right side in FIG.

  If the above operations are alternately performed and deposition is performed up to n times, as shown in the lower part of FIG. 9, both end portions of the deposition layer 36 formed on the upper surface of the substrate 34 become thinner than the central portion. Convex shape. The lengths of the thin layers at both ends of the deposited layer 36 are twice the response delay distance x of the shutter 31.

  When tape polishing is performed after deposition as in rib correction, the deposited layer 36 is allowed to have a convex shape, but if it is not permitted, the response of the shutter 31 needs to be corrected.

  FIG. 10 is a diagram for explaining the deposition drawing process for correcting the response delay Td of the shutter 31 and the effect thereof. First, the first deposition drawing will be described. When a command to open the shutter 31 at a position (P1-x) before the response delay distance x of the shutter 31 from the start point P1 of the deposition drawing command section B is given, the deposition is performed at the position P1 advanced by the response delay distance x of the shutter 31. Drawing starts.

  Further, when a command to close the shutter 31 at a position (P2-x) before the response delay distance x of the shutter 31 from the end point P2 of the deposition drawing command section B is given, the response delay distance x of the shutter 31 is similarly advanced. The deposition drawing is performed up to the position P2. That is, the deposition drawing can be performed without deviating from the deposition drawing command section B, and the deposition drawing command section B and the deposition drawing section can be matched.

  Next, the second deposition drawing will be described. Since the deposition is performed while returning to the original position even number of times, the deposition drawing is performed from the left side to the right side in FIG. When a command to open the shutter 31 is given at the position (P2 + x) before the point P2 in the deposition drawing command section B, the response is delayed by the response delay distance x of the shutter 31 obtained from the response time Td of the shutter 31 and the speed v of the XY stage 10. The deposition drawing is started from the position P2.

  Further, when a command to close the shutter 31 is given at a position (P1 + x) before the point P1 in the deposition drawing command section B, similarly, the deposition drawing is performed up to a position P1 delayed by the response delay distance x of the shutter 31. That is, the deposition drawing can be performed without deviating from the deposition drawing section B, and the deposition drawing command section B and the deposition drawing section can be matched. If the above operations are alternately performed and deposition is performed up to n times, the height of the deposited layer 36 formed on the upper surface of the substrate 34 can be made uniform as shown in the lower part of FIG.

  If the relative movement speed v between the coating nozzle 30 and the substrate 34 is made constant, the response delay amount x of the shutter 31 can be easily obtained.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

1 is a perspective view showing an overall configuration of a pattern correction apparatus according to an embodiment of the present invention. It is sectional drawing which shows the principal part of the pattern correction apparatus shown in FIG. It is sectional drawing which shows the example of a change of the pattern correction apparatus shown in FIG. It is a figure which shows the usage method of the pattern correction apparatus shown in FIG. It is another figure which shows the usage method of the pattern correction apparatus shown in FIG. FIG. 7 is still another view showing a method for using the pattern correction apparatus shown in FIG. 1. FIG. 7 is still another view showing a method for using the pattern correction apparatus shown in FIG. 1. It is a figure which shows the structure of the shutter mechanism of the pattern correction apparatus shown in FIG. FIG. 9 is a diagram for explaining a deposition drawing process in which the response delay of the shutter illustrated in FIG. 8 is not corrected and its problems. FIG. 9 is a diagram for explaining a deposition drawing process for correcting the response delay of the shutter shown in FIG. 8 and its effect.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Pattern correction apparatus 2 Observation optical system 3 Monitor 4 Cut laser part 5 Fine particle deposition apparatus 6 Substrate heating part 7 Image processing part 8 Host computer 9 Control computer 10 XY stage 11 Chuck part , 12 Z stage, 13 electrode, 13a open defect part, 14 substrate, 15 spraying part, 16 decompression part, 17 heating part, 18 head part, 19 container, 20 correction liquid, 21 spraying nozzle, 21a jet outlet, 21b inlet , 22 Nozzle part, 23 Air collecting part, 24 Exhaust pipe, 25 Outer pipe, 26 Gap, 27 Pipe, 28 Heater, 29 Temperature sensor, 30 Application nozzle, 31 Shutter, 32 Correction part, 34 Back glass substrate, 35 Rib, 35a Rib chip defect part, 36_1 to 36_n Deposition layer, 40 struts, 41 movable part, 41a hole 42 screws, 43 linear slide bearings, 43a beds, 43b table, fixing stand 44, 45 linear electromagnetic solenoid, 45a output shaft, 45b connector, 46 set screws.

Claims (2)

A pattern correction apparatus for correcting a defective portion of a fine pattern formed on a substrate,
A heating device for heating the substrate in a range including at least the defect portion;
A spraying device for spraying a mist-like correction liquid onto the defect portion, and depositing the correction liquid on the defect portion to correct the defect portion;
The deposition apparatus includes an application nozzle that ejects the mist-like correction liquid, and a shutter that is opened and closed between the application nozzle and the substrate.
Further, a positioning device that relatively moves the deposition apparatus and the substrate so that the coating nozzle moves above the defect portion;
Based on the response time from when the shutter is opened or closed, until the shutter is opened or closed, and the relative movement speed of the coating nozzle and the substrate, the shutter is within the response time. And a control device for obtaining a response delay distance for moving the shutter and issuing a command to open or close the shutter when the coating nozzle reaches a position before the response delay distance from the start point or the end point of the defective portion. A pattern correction device characterized by the above.   The pattern correction apparatus according to claim 1, wherein a relative movement speed of the coating nozzle and the substrate is constant.

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