JP2007043795A - Matrix converter apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a matrix converter apparatus for preventing semiconductor switching elements for constituting a bidirectional switch from overvoltage breakdown during a dielectric strength test. <P>SOLUTION: A matrix converter apparatus comprises the bidirectional switch provided with phase input terminals connected to an AC power supply 1, phase output terminals for outputting an arbitrary DC/AC voltage, IGBT transistors 102, 103 connected reversely in series, and diodes 104, 105 connected reversely to the IGBT transistors in parallel; and a group 5 of the bidirectional switches for connecting the phase input terminals and the phase output terminal, PWM-controls the group of the bidirectional switches, converts the voltage of the AC power supply into the arbitrary DC/AC voltage, and outputs it from the phase output terminals. Resistors R1, R2 are provided between a series connection of the IGBT transistors constituting the bidirectional switch and the phase input terminals or the phase output terminals. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an IGBT transistor (insulated gate bipolar) that constitutes a bidirectional switch that is an essential component of the device in a matrix converter device that outputs an arbitrary polyphase AC or DC voltage with a multiphase AC power supply as an input. The present invention relates to a matrix converter device having a function of preventing an overvoltage breakdown of a semiconductor switching element such as a transistor during a dielectric strength test performed for an assembly quality inspection of the matrix converter device.

  A general matrix converter device includes a bidirectional switch group composed of bidirectional switches that connect each phase input terminal of an AC power supply and each phase output terminal that outputs an arbitrary cross-flow voltage. This is specifically shown in FIG. In FIG. 1, on / off PWM control is performed on both switches S1 to S9 via a control device such as a CPU (not shown) to convert and output an AC power supply voltage to an arbitrary cross-flow voltage.

The bidirectional switch is configured on the basis of a semiconductor switching element such as an IGBT transistor. FIG. 17 to FIG. 19 specifically show various connection configuration examples of the bidirectional switch. In FIG. 17, IGBT transistors 102 and 103 are connected in series in the reverse direction, and diodes 104 and 105 are connected in antiparallel to each IGBT to constitute a bidirectional switch 100. The emitter terminal of the IGBT transistor 102 is connected to the phase input terminal R, and the emitter terminal side of the IGBT transistor 103 is connected to the phase output terminal U. Each collector terminal of the commonly connected IGBT transistors is not connected to each phase input / output terminal.
A bidirectional switch 110 shown in FIG. 18 is obtained by disconnecting the connection between the collector terminals of the IGBT transistors 102 and 103 with respect to the bidirectional switch 100 of FIG. Also in the bidirectional switch 110, each collector terminal of the IGBT transistor is not connected to each phase input / output terminal.
FIG. 19 shows a bidirectional switch 120 in which bridge-structured diodes 122 to 125 and an IGBT transistor 121 are connected in antiparallel. Also in this case, the collector terminal and emitter terminal of the IGBT transistor are not connected to each phase input / output terminal.

  By the way, since the bidirectional switch used in the matrix converter device is composed of a high-speed semiconductor switching element such as an IGBT transistor, the conduction current is instantaneously cut off by the instantaneous OFF operation of the IGBT transistor, and a surge voltage is generated between the output terminals of the IGBT transistor. appear. In a large-capacity model that cuts off a large current, a snubber circuit for absorbing and suppressing surge voltage is generally connected and arranged at an appropriate circuit position (see, for example, Patent Document 1). In order to connect a snubber circuit at a suitable position, the bidirectional switch 100 has a module configuration, and the collector terminal common connection portion of the IGBT transistor is used as an external terminal of the module (see, for example, Patent Document 2). ).

JP-A-11-262264 (FIG. 9) Japanese Patent Laid-Open No. 2003-333826 (FIG. 1)

The matrix converter device takes AC200V or AC400V commercial AC power as input, and its output is also high voltage output similar to the input. Therefore, when manufacturing quality tests of assembled products or when the matrix converter device is installed in equipment A dielectric strength test is performed.
In the dielectric strength test, the AC power supply input is shut off, all the phase input terminals and phase output terminals of the matrix converter device are connected together in common and connected between this common connection point and the ground terminal of the matrix converter device. A method is adopted in which an AC voltage of 60 Hz, AC 3000 V, or the like is applied, and whether the dielectric strength test is accepted or not is determined according to the amount of leakage current generated at that time.

  However, since there are IGBT transistor output terminals that are not connected to phase input / output terminals in semiconductor switching elements such as IGBT transistors that constitute a bidirectional switch, both the IGBT transistor and the IGBT transistor are applied when applying a high-voltage AC voltage in the dielectric strength test. Matrix converter, which cannot occur in a normal inverter device in which a high voltage is generated between the collector and emitter terminals of the IGBT transistor due to the influence of stray capacitance existing between each direction switch and the IGBT transistor is overvoltage destroyed. It has been found that there are problems specific to the device.

  The cause of this overvoltage damage will be described by taking the bidirectional switch 100 of FIG. 17 as an example. FIG. 2 shows the bidirectional switch 100 of FIG. 17 in a cross-sectional structure. A stray capacitance Cps exists between the collector and emitter terminals of the IGBT transistors 102 and 103, respectively, and a collector base common part of the IGBT transistors 102 and 103 and a copper base (case heat dissipation surface) 51 on which the IGBT transistors are mounted, There is a stray capacitance Cm. Cm cannot be made significantly smaller than Cps because of the relationship between area, distance, structure, and the like. The copper base 51 is directly mounted on the heat dissipation fin of the matrix converter device, but both the copper base and the heat dissipation fin are made of metal, and the heat dissipation fin is electrically connected to the ground terminal of the matrix converter device. Therefore, the stray capacitance Cm is substantially equal to the stray capacitance between the collector terminal and the ground terminal of the IGBT transistor.

  FIG. 3 shows the bidirectional switch 100 including the stray capacitance as an electric circuit diagram. In the dielectric strength test, the phase input terminal R and the phase output terminal U are connected in common and connected in common, and a voltage of 3000 V AC is applied between the common connection point and the ground terminal. Therefore, FIG. 4 shows a circuit diagram in the dielectric strength test. When the voltage of AC 3000 V is applied, the diodes 104 and 105 are present, so that a high voltage is generated between the collector and emitter terminals of the IGBT transistor only when the ground terminal side is at a high potential. In addition, the following calculation formula does not consider the presence of a diode. As a result, a maximum voltage of √2 · 3000 · Cm / (Cm + 2 · Cps) is generated between the collector and emitter terminals of the IGBT transistors 102 and 103. Since Cm does not become much smaller than Cps, the maximum allowable voltage between the terminals is easily exceeded between the collector and emitter terminals of the IGBT transistor. In a matrix converter device for AC400V input, the maximum allowable voltage of the IGBT transistor is generally 1200Vdc, and for AC200V, it is generally 600Vdc. Therefore, if Cm> 2.605 · Cps, a voltage exceeding the maximum allowable voltage of 1200 V between the collector and emitter terminals of the IGBT transistor is generated in the dielectric strength test, and the IGBT transistor is overvoltage destroyed. As described above, in the withstand voltage test, a semiconductor switching element such as an IGBT transistor is very easily damaged, and the matrix converter device is damaged.

  Further, when the IGBT transistors 102 and 103 constituting the bidirectional switch are both turned off during the operation of the matrix converter device, the collector terminals are in an electrically floating state, and intrusion noise from inside or outside the device. On the other hand, it is also in an unstable state that is likely to malfunction.

Therefore, the present invention extracts a unique problem that is latent in the matrix converter device provided with the bidirectional switch, solves this problem, and prevents the matrix converter device from being damaged during the withstand voltage test. An object of the present invention is to provide a matrix converter device in which the semiconductor switching element can be prevented from malfunctioning due to an electrically floating unstable state.

In order to solve the above-mentioned problems, a first aspect of the present invention provides a semiconductor switching element in which each phase input terminal connected to an AC power supply, each phase output terminal for outputting an arbitrary cross-flow voltage, and a series connection in a reverse direction are provided. A bidirectional switch group including a bidirectional switch including a diode connected in reverse parallel to each semiconductor switching element, and each bidirectional switch connecting between each phase input terminal and each phase output terminal. In the matrix converter device that PWM-controls the bidirectional switch group to convert the AC power supply voltage into an arbitrary orthogonal current voltage and outputs the voltage from each phase output terminal, the series of semiconductor switching elements constituting the bidirectional switch A resistor connected between the connection portion and the phase input terminal or the phase output terminal is provided.
By providing a resistor connected between the series connection part of the semiconductor switching elements constituting the bidirectional switch and the phase input terminal or the phase output terminal, the impedance value between the output terminals of the semiconductor switching element can be reduced. Since the voltage generated between the output terminals of the semiconductor switching element during the dielectric strength test of the matrix converter device can be reduced, the semiconductor switching element can be prevented from being destroyed by overvoltage.

The invention according to claim 2 is a connected body of each phase input terminal connected to an AC power source, each phase output terminal for outputting an arbitrary cross-flow voltage, and a semiconductor switching element and a diode connected in series in the forward direction. A bidirectional switch group composed of two bidirectional switches connected in reverse parallel and each bidirectional switch connecting between each phase input terminal and each phase output terminal, the bidirectional switch group In a matrix converter device that performs PWM control to convert the AC power supply voltage into an arbitrary cross-flow voltage and output from each phase output terminal, a series connection portion of a semiconductor switching element and a diode constituting the bidirectional switch; A resistor connected between the phase input terminal or the phase output terminal is provided.
Although both switches have different configurations from the invention of claim 1, the impedance value between the output terminals of the semiconductor switching element can be reduced by connecting a resistor. The voltage generated between the output terminals of the switching element can be reduced, and the overvoltage breakdown of the semiconductor switching element can be prevented.

In the invention according to claim 3, each phase input terminal connected to the AC power source, each phase output terminal for outputting an arbitrary cross-flow voltage, and two diodes connected in series in the forward direction are connected in parallel. A bidirectional switch comprising a connected parallel connection body and a semiconductor switching element connected in reverse parallel to the parallel connection body, and each bidirectional switch connecting between each phase input terminal and each phase output terminal. In a matrix converter device that PWM-controls the bidirectional switch group to convert the AC power supply voltage into an arbitrary cross-flow voltage and outputs it from each phase output terminal. A resistor connected between one parallel connection point of the parallel connection body and the phase input terminal or phase output terminal, and another parallel connection point and the phase input terminal of the parallel connection body Or it is characterized by comprising a resistor connected between the phase output terminal.
By providing the resistor, the impedance value between the output terminals of the semiconductor switching element can be reduced, and the voltage generated between the output terminals of the semiconductor switching element during the dielectric strength test of the matrix converter device can be reduced. Can be destroyed.

  The invention according to claim 4 is the one in which the connection position of the resistor is changed with respect to the invention according to claim 3, but the impedance value between the output terminals of the semiconductor switching element can be reduced, and the withstand voltage of the matrix converter device can be reduced. The voltage generated between the output terminals of the semiconductor switching element during the test can be reduced, and the semiconductor switching element can be prevented from being overvoltage destroyed.

  The invention according to claim 5 is a serially connected body of IGBT transistors in which each phase input terminal connected to an AC power source, each phase output terminal for outputting an arbitrary cross-flow voltage, and emitter terminals are commonly connected. A bidirectional switch group including a bidirectional switch including a diode connected in reverse parallel to each IGBT transistor, and each bidirectional switch connecting between each phase input terminal and each phase output terminal, In a matrix converter device that PWM-controls the bidirectional switch group to convert the AC power supply voltage into an arbitrary cross-flow voltage and outputs it from each phase output terminal, for on-off drive of the IGBT transistor that constitutes the bidirectional switch An impedance reduction means connected between the signal input terminal and the phase input terminal or the phase output terminal is provided.

Since the IGBT transistors are connected in series with the emitter terminals connected in common, the on / off drive signal input terminal becomes an external terminal that substitutes for the series connection portion, and the impedance reducing means is connected to the substitute external terminal. Thus, the same effect as that connected to the serial connection portion can be obtained.
When the bidirectional switch is configured in a module configuration, the serial connection portion of the IGBT transistor is usually not external, so in order to connect the impedance reduction means to the serial connection portion, the serial connection portion is connected to the external terminal according to a special specification. In the invention according to claim 5, since the serial connection portion of the IGBT transistor is replaced with an on / off drive signal input terminal as an external terminal, the impedance reduction means can be used without using a special specification. It becomes possible to connect to. The impedance reduction means is connected to the signal input terminal for on / off drive, is connected to the signal input terminal through which a small current flows, and is connected to a part different from the large current conduction path. It is different from the absorbing snubber circuit. The impedance reducing means is not limited to a resistor, and any means that reduces impedance, such as a capacitor or a combination of a capacitor and a resistor, may be used.

  The invention according to claim 6 is the one in which the connection configuration of the bidirectional switch is changed with respect to the invention according to claim 5, but the series connection portion of the IGBT transistor and the diode is an on / off drive signal input terminal of the IGBT transistor. In this case, the effect produced by the substitution external terminal is the same as that of the fifth aspect of the invention.

According to a seventh aspect of the present invention, in the matrix converter device according to any one of the first to fourth aspects, a module structure including the bidirectional switch group is provided, and the module structure includes the resistor. It is what.
The purpose of the resistor is to suppress the voltage generated between the output terminals of the semiconductor switching element during the dielectric strength test of the matrix converter device to be less than the maximum allowable voltage between the parts. From the relationship, it has been confirmed that a high resistance value of several hundred k ohms exhibits a sufficient voltage suppression effect. In this way, a high resistance value of several hundred k ohms can be used as a resistor, so that a small and small-capacity resistor can be used while suppressing the amount of heat generated inside the resistor, and can be built in a module structure. It becomes. Since the resistor is built in the module structure, it is not necessary to use a serial connection portion such as an IGBT transistor as an external terminal of the module.

The invention according to claim 8 is that each phase input terminal connected to an AC power source, each phase output terminal for outputting an arbitrary cross-flow voltage, a ground terminal, a semiconductor switching element connected in series in the reverse direction, A bidirectional switch group including a bidirectional switch including a diode connected in reverse parallel to each semiconductor switching element, and each bidirectional switch connecting between each phase input terminal and each phase output terminal, In the matrix converter device that PWM-controls the bidirectional switch group to convert the AC power supply voltage into an arbitrary cross-flow voltage and outputs it from each phase output terminal, the ground terminal, each phase input terminal, and each phase output terminal In the insulation withstand voltage test, the impedance between the serial connection portion of the semiconductor switching elements constituting the bidirectional switch and the phase input terminal or phase output terminal is determined. Dance is characterized by including a means for switching connection to reduce.
In the dielectric breakdown voltage test of the matrix converter device, the switching connection is made so as to reduce the impedance, thereby preventing a high voltage from being generated between the output terminals of the semiconductor switching element. Note that means for reducing the impedance does not function during normal operation. As described above, since the switching connection is performed so that the impedance is reduced in the dielectric strength test, it is not necessary to incorporate all of the means for reducing the impedance in the matrix converter device. Therefore, as a whole means for reducing the impedance. There is no need for small size and low cost.

The invention described in claim 9 is obtained by changing the configuration of the bidirectional switch with respect to the invention described in claim 8, and the operational effect is the same as that of the invention described in claim 8.

  The present invention relates to a matrix converter device, and a semiconductor constituting a bidirectional switch in the matrix converter device in an insulation withstand voltage test performed when manufacturing quality tests of assembled products or when the matrix converter device is installed in equipment. An overvoltage exceeding the maximum allowable voltage is applied between the terminals of the switching element, so that the semiconductor switching element can be prevented from being destroyed, in other words, the matrix converter device can be prevented from being destroyed.

In addition, when both of the series-connected semiconductor switching elements constituting the bidirectional switch are turned off during the operation of the matrix converter device, the output terminal of the semiconductor switching device is in an electrically floating state, and the inside of the device Or, it can be in an unstable state that is very likely to malfunction due to intrusion noise from the outside, but even in such a case, it becomes an unstable state in which the part is electrically fixed and electrically floating This also has the effect of preventing the malfunction.
Further, even when the bidirectional switch group has a module structure, the present invention can be implemented very easily without using a special module structure.

Hereinafter, each embodiment of the present invention will be described with reference to the drawings.
FIG. 1 shows a configuration of a general matrix converter device which is a premise of the present invention. Three-phase AC power source 1, each phase input terminal R, S, T connected to the AC power source, motor 9, each phase output terminal U, V, W, each phase input that outputs an arbitrary cross-flow voltage to the motor 1 shows a matrix converter device including a bidirectional switch group 5 composed of bidirectional switches S1 to S9 and bidirectional switches S1 to S9 that connect terminals and respective phase output terminals.

  FIG. 5 shows a first embodiment of the present invention. The present invention is implemented in the bidirectional switches S1 to S9 on the premise of the matrix converter device of FIG. The bidirectional switch S1 will be described as a representative example (the same applies to the following embodiments), but the bidirectional switches S2 to S9 have the same configuration as S1. The bidirectional switch S1 shown in FIG. 5 is different from the bidirectional switch 100 of FIG. 17 in that resistors R1 and R2 (both resistance values are R0) are added. Therefore, the common instrument code is the same. The stray capacitance between the collector terminals of the IGBT transistors 102 and 103 and the ground terminal is Cm, the stray capacitance between the collector and emitter terminals is Cps, and the phase input terminal R and the phase output terminal U are commonly connected in the dielectric strength test. Therefore, these electric circuit diagrams including the resistors have the configuration shown in FIG. In order to facilitate the description of the operational effects of the present invention, the following voltage calculation formula does not consider the presence of the diodes 104 and 105 in FIG. That is, in the withstand voltage test, since there are the diodes 104 and 105, the generation of a high voltage between the collector and emitter terminals of the IGBT transistor is limited only when the ground terminal 106 is at a positive potential. It is assumed that a high voltage is generated between the collector and emitter terminals of the IGBT transistor even when the ground terminal side has a negative potential. In this way, since a simple explanation using an AC voltage type can be made, it is easy to understand the meaning and effect of connecting the resistors R1 and R2 to the part.

When a voltage of 3000 V AC and 60 Hz is applied between the terminal R and the terminal U and the ground terminal 106, the maximum voltage Vce generated between the collector and emitter terminals of the IGBT transistors 102 and 103 is Vce = | √2 · 3000 Z0 / (Z0 + 1 / (j · 120 · π · Cm)) | = √2 · 3000 / √ ((1 + 2 · Cps / Cm) ² + 1 / (60 · π · Cm · R0) ² ) (However, Z0 = ((R0 / 2) · 1 / (j · 240 · π · Cps)) / (R0 / 2 + 1 / (j · 240 · π · Cps)))
Therefore, compared with √2 · 3000 / (1 + 2 · Cps / Cm) when there is no resistor (R0 = ∞), the voltage generated between the terminals can be reduced.

As is apparent from FIG. 6, the circuit configuration is the same as that in FIG. 6 when the resistor is only R1 or only R2 (however, the resistance value is R0 / 2 => R0). In this case as well, the voltage generated between the collector and emitter terminals can be reduced. In this case, the voltage generated between the collector and the emitter terminal is √2 · 3000 / √ ((1 + 2 · Cps / Cm) ² + 1 / (120 · π · Cm · R0) ² ). The voltage generated between the terminals is reduced as compared with the case where there is no.
In this embodiment, the collector terminal common connection portion of the IGBT transistors 102 and 103 is connected to the phase input terminal R and the phase output terminal U through resistors, but the connection destination is the phase input terminal S other than the above. , T, or phase output terminals V, W can be used. This is because the I / O terminals are commonly connected to the common for all phases during the dielectric strength test, and the resistors are high in resistance, so the interference received from other phases via resistors with high resistance during normal operation is ignored. Because it is as small as possible. The same applies to the following embodiments.

FIG. 7 shows a second embodiment of the present invention. The present invention is implemented in the bidirectional switches S1 to S9 on the premise of the matrix converter device of FIG. The bidirectional switch S1 shown in FIG. 7 is different from the bidirectional switch 110 in FIG. 18 in that resistors R3 and R4 (both resistance values are R0) are added. Therefore, the common instrument code is the same. The stray capacitance between the collector terminal and the ground terminal of the IGBT transistors 112 and 113 is Cm, the stray capacitance between the collector and emitter terminals is Cps, and the phase input terminal R and the phase output terminal U are commonly connected in the dielectric strength test. Therefore, these electric circuit diagrams including the resistors have the configuration shown in FIG. When a voltage of AC 3000 V 60 Hz is applied between the terminal R and the terminal U and the ground terminal, according to the same simplified calculation formula as described above, the voltage generated between the collector and emitter terminals of the IGBT transistors 112 and 113 is: √2 · 3000 / √ ((1 + Cps / Cm) ² + 1 / (120 · π · Cm · R0) ² ), compared to √2 · 3000 / (1 + Cps / Cm) without a resistor The voltage generated between them can be reduced.
As is apparent from FIG. 8, when the resistor R5 is connected in parallel to the diode 114 instead of the resistor R3, or when the resistor R6 is connected in parallel to the diode 115 instead of the resistor R4, In any case where all of the resistors R3 to R6 are connected, the voltage generated between the collector and emitter terminals can be reduced.

FIG. 9 shows a third embodiment of the present invention. The bidirectional switch S1 shown in FIG. 9 is different in that resistors R7 and R8 (both resistance values are R0) are added to the bidirectional switch 120 of FIG. Therefore, the common instrument code is the same. The stray capacitance between the collector terminal and the ground terminal of the IGBT transistor 121 is Cm, the stray capacitance between the emitter terminal and the ground terminal is Cn, and the stray capacitance between the collector and the emitter terminal is Cps. Since the phase output terminal U is commonly connected, these electric circuit diagrams including the resistors have the configuration shown in FIG.
When a voltage of AC 3000 V 60 Hz is applied between the terminal R and the terminal U and the ground terminal, and the terminal R and the terminal U side have a positive potential with respect to the ground terminal side, the circuit diagram of FIG. It can be simplified as follows. In this case, the voltage generated between the collector and emitter terminals of the IGBT transistor 121 is √2 · 3000 / √ ((1 + Cps / Cn) ² + 1 / (120 · π · Cn · R0) ² ), and the voltage generated between the terminals can be reduced as compared with √2 · 3000 / (1 + Cps / Cn) when there is no resistor. Further, when the terminal R and the terminal U side have a negative potential with respect to the ground terminal side, it can be simplified as shown in FIG. 11B. In this case, the voltage generated between the collector and emitter terminals of the IGBT transistor 121 Is √2 · 3000 / √ ((1 + Cps / Cm) ² + 1 / (120 · π · Cm · R0) ² ), compared to √2 · 3000 / (1 + Cps / Cm) without a resistor, The voltage generated between the terminals can be reduced.

FIG. 12 shows a fourth embodiment of the present invention. The bidirectional switch S1 shown in FIG. 12 is different from the bidirectional switch 120 of FIG. 19 in that a resistor R9 (resistance value is R0) is added. Therefore, the common instrument code is the same. The stray capacitance between the collector terminal and the ground terminal of the IGBT transistor 121 is Cm, the stray capacitance between the emitter terminal and the ground terminal is Cn, and the stray capacitance between the collector-emitter terminal is Cps. Since the phase output terminal U is commonly connected, these electric circuit diagrams including the resistors are configured as shown in FIG.
When a voltage of AC 3000 V 60 Hz is applied between the terminal R and the terminal U and the ground terminal, and the terminal R and the terminal U side have a positive potential with respect to the ground terminal side, it is equivalent to the circuit diagram of FIG. However, the instrument code R8 becomes R9). Further, when the terminal R and the terminal U side have a negative potential with respect to the ground terminal side, it is equivalent to the circuit diagram of FIG. 11B (however, the instrument code R7 becomes R9). Accordingly, as in the third embodiment, the voltage generated between the collector and emitter terminals of the IGBT transistor 121 can be reduced.

  FIG. 14 shows a modularized bidirectional switch S1 as a fifth embodiment of the present invention. The bidirectional switch S1 is configured by a series connection having the emitter terminals of the IGBT transistors 131 and 132 as a common connection point. This common connection point through which a large current flows does not come out of the module, but the on / off drive signal input terminal of the IGBT transistor is used as an external terminal instead of this common connection point. Here, for example, a circuit having a predetermined impedance value composed of a resistor or a capacitor is connected between the signal input terminal on the emitter side and the phase input terminal R or the phase output terminal S among the signal input terminals for on / off driving. By doing so, it is possible to reduce the voltage generated between the collector and emitter terminals of the IGBTs 131 and 132 during the dielectric strength test. Further, if an element such as a resistor having an impedance value smaller than the predetermined impedance value is connected between the gate and the emitter of the IGBT transistor, the signal input terminal on the gate side and the phase input terminal R or the phase output terminal S are connected to each other. Even when a circuit having a predetermined impedance value is connected between them, the voltage generated between the collector and emitter terminals of the IGBTs 131 and 132 can be reduced.

  In the first to fourth embodiments, the resistor for reducing the voltage generated between the collector and emitter terminals of the IGBT transistor during the dielectric strength test sufficiently functions even with a resistance value of about several hundred kΩ. If the resistance value is increased, less heat energy is consumed inside the resistor, so that the resistor size can be sufficiently reduced. Therefore, when the bidirectional switch S1, the bidirectional switches S1 to S3, or the bidirectional switches S1 to S9 are configured as one module, the resistor can be incorporated in the module. As a built-in method, not only a case where a resistor is mounted on a substrate inside a module but also a case where a resistor is mounted on a substrate that also has a function as a module upper lid is conceivable.

FIG. 15 shows a modularized bidirectional switch S1. The bidirectional switch S1 is configured by a series connection having the collector terminals of the IGBT transistors 141 and 142 as a common connection point, and the series connection point is a large current. Used as an external terminal. The external terminals are soldered on the main circuit board, and the series connection points are also soldered on the main circuit board in the bidirectional switches S2 to S9. The external terminal of the common connection point of each bidirectional switch is connected to each pin terminal arranged near the external cable connection input / output terminal portion of the matrix converter device shown in FIG. Each is connected. In the dielectric strength test, the input / output terminals of each phase are connected in common to the collective common, and the pin terminals are also connected in common to the input / output terminals of each phase. By doing so, the impedance between the series connection point of the IGBT transistor and the input / output terminals of each phase can be made substantially zero during the withstand voltage test, and generation of a high voltage between the collector and emitter terminals of the IGBT transistor can be prevented.
When the bidirectional switch having the configuration shown in FIG. 18 is used and the collector terminal of each IGBT transistor is an external terminal and connected to each pin terminal arranged near the input / output terminal portion of the matrix converter device, or Even when the collector and emitter terminals of the IGBT transistor are external terminals using the bidirectional switch having the configuration shown in FIG. It can be prevented from occurring.

The present invention relates to a matrix converter device that receives a multiphase AC power source and outputs an arbitrary multiphase AC or DC voltage by direct conversion.
In addition, the present invention provides a semiconductor switching element that constitutes a bidirectional switch in a matrix converter device in a dielectric strength test that is performed during a manufacturing quality test of an assembly product of a matrix converter device or when the matrix converter device is installed in a device. It is possible to provide a high-reliability and high-quality matrix converter device by preventing overvoltage breakdown and overvoltage breakdown or deterioration of the semiconductor switching element, and the entire device with the matrix converter device installed. The present invention relates to a matrix converter device that achieves high reliability and high quality.
Further, according to the present invention, both the IGBTs connected in series constituting the bidirectional switch are turned off during the operation of the matrix converter device, and the collector or emitter terminal of the IGBT transistor is in an electrically floating state. The present invention relates to a matrix converter device that can realize a stable operation by electrically fixing the potential even in an unstable state that is very likely to malfunction due to an intrusion noise from.

Configuration diagram of a general matrix converter device as a premise of the present invention A cross-sectional view of a bidirectional switch Circuit diagram of bidirectional switch taking into account stray capacitance existing between each part Circuit diagram of bidirectional switch in Fig. 3 during dielectric strength test The first embodiment of the present invention is shown Circuit diagram of bidirectional switch section during dielectric withstand voltage test in first embodiment of the present invention A second embodiment of the present invention is shown Circuit diagram of bidirectional switch section during dielectric strength test in second embodiment of the present invention A third embodiment of the present invention is shown Circuit diagram of bidirectional switch section during dielectric strength test in third embodiment of the present invention Simplified circuit diagram of the circuit diagram of FIG. A fourth embodiment of the present invention is shown Circuit diagram of bidirectional switch section during dielectric strength test in fourth embodiment of the present invention Bidirectional switch module configuration diagram in the sixth embodiment of the present invention Bidirectional switch module configuration diagram in the seventh embodiment of the present invention Matrix converter device in the seventh embodiment of the present invention Circuit diagram of first example of bidirectional switch Circuit diagram of second example of bidirectional switch Circuit diagram of third example of bidirectional switch

Explanation of symbols

1 Three-phase AC power supply 5 Bidirectional switch group 9 Motor 11, 12 IGBT transistor 13, 14 Diode 16 Insulating plate (insulating layer)
17 Conductor patterns 41, 42 Bidirectional switch external terminals 43, 44 ON / OFF drive signal input terminals (gate side input terminals)
51 Copper Base 52 Heat Dissipation Fins 53, 106 Ground Terminal 54 Ground Line 60 Matrix Converter Device 61 Input / Output Terminal Unit for External Cable Connection 62 Pin Terminal 63 Operators 100, 110, 120 Bidirectional Switches 102, 103, 112, 113, 121 IGBT transistors 131, 132, 141, 142 IGBT transistors 104, 105, 114, 115, 122 to 125 Diodes 133, 134, 143, 144 Diode 135, 145 External terminal of bidirectional switch S1 (phase input terminal R side)
136, 147 External terminal of bidirectional switch S1 (phase output terminal U side)
137, 139, 149, 150 ON / OFF drive signal input terminal (gate side input terminal)
138, 148, 151 ON / OFF drive signal input terminal (emitter side input terminal)
140, 152 Bidirectional switch module 146 External terminal R, S, T phase common terminal U, V, W phase output terminal S1-S9 Bidirectional switch R1-R9 resistor

Claims (9)

Each phase input terminal connected to the AC power source, each phase output terminal for outputting an arbitrary cross-flow voltage, a semiconductor switching element connected in series in the reverse direction, and a diode connected in reverse parallel to each of the semiconductor switching elements A bidirectional switch group including the bidirectional switch and each bidirectional switch connecting between each phase input terminal and each phase output terminal, and the AC power supply by PWM controlling the bidirectional switch group In the matrix converter device that converts the voltage into an arbitrary cross-flow voltage and outputs it from each phase output terminal,
A matrix converter device comprising a resistor connected between a series connection portion of semiconductor switching elements constituting the bidirectional switch and the phase input terminal or phase output terminal. Each phase input terminal connected to the AC power source, each phase output terminal for outputting an arbitrary cross-flow voltage, and two connections of semiconductor switching elements and diodes connected in series in the forward direction are connected in reverse parallel. A bidirectional switch group composed of the bidirectional switch and each bidirectional switch connecting between each phase input terminal and each phase output terminal, and the AC power supply by PWM controlling the bidirectional switch group In the matrix converter device that converts the voltage into an arbitrary cross-flow voltage and outputs it from each phase output terminal,
A matrix converter device comprising a resistor connected between a series connection portion of a semiconductor switching element and a diode constituting the bidirectional switch and the phase input terminal or phase output terminal. Each phase input terminal connected to an AC power source, each phase output terminal for outputting an arbitrary cross-flow voltage, a parallel connection body in which two diode connection bodies connected in series in the forward direction are connected in parallel, and the parallel connection A bidirectional switch group comprising a bidirectional switch including a semiconductor switching element connected in reverse parallel to the connection body, and each bidirectional switch connecting between each phase input terminal and each phase output terminal; In a matrix converter device that PWM-controls a bidirectional switch group to convert the AC power supply voltage into an arbitrary cross-flow voltage and outputs it from each phase output terminal.
A resistor connected between one parallel connection point of the parallel connection body constituting the bidirectional switch and the phase input terminal or phase output terminal, and another parallel connection point of the parallel connection body and the phase A matrix converter device comprising a resistor connected between an input terminal or a phase output terminal. Each phase input terminal connected to an AC power source, each phase output terminal for outputting an arbitrary cross-flow voltage, a parallel connection body in which two diode connection bodies connected in series in the forward direction are connected in parallel, and the parallel connection A bidirectional switch group comprising a bidirectional switch including a semiconductor switching element connected in reverse parallel to the connection body, and each bidirectional switch connecting between each phase input terminal and each phase output terminal; In a matrix converter device that PWM-controls a bidirectional switch group to convert the AC power supply voltage into an arbitrary cross-flow voltage and outputs it from each phase output terminal.
A matrix converter device comprising a resistor connected in parallel to a parallel connection body constituting the bidirectional switch. Each phase input terminal connected to an AC power source, each phase output terminal for outputting an arbitrary cross-flow voltage, a series connection body of IGBT transistors commonly connected to the emitter terminals, and each IGBT transistor in antiparallel A bidirectional switch group including a bidirectional switch including a connected diode and each of the bidirectional switches connecting between each phase input terminal and each phase output terminal; and PWM control of the bidirectional switch group In the matrix converter device that converts the AC power supply voltage to an arbitrary cross-flow voltage and outputs it from each phase output terminal,
A matrix converter device comprising impedance reduction means connected between an on / off drive signal input terminal of an IGBT transistor constituting the bidirectional switch and the phase input terminal or phase output terminal. There are 2 serial connection bodies composed of two phase input terminals connected to an AC power source, each phase output terminal outputting an arbitrary cross-flow voltage, an IGBT transistor in which an emitter terminal of an IGBT transistor and an anode terminal of a diode are connected, and a diode. A bi-directional switch group composed of bi-directional switches connected in reverse parallel and the bi-directional switches connecting the phase input terminals and the phase output terminals. In the matrix converter device that controls and converts the alternating current power supply voltage to an arbitrary cross-flow voltage and outputs it from each phase output terminal,
A matrix converter device comprising impedance reduction means connected between an on / off drive signal input terminal of an IGBT transistor constituting the bidirectional switch and the phase input terminal or phase output terminal. A module structure including the bidirectional switch group;
5. The matrix converter device according to claim 1, wherein the module structure includes the resistor. 6. Each phase input terminal connected to AC power supply, each phase output terminal outputting any cross current voltage, ground terminal, semiconductor switching element connected in series in reverse direction, and anti-parallel connection to each semiconductor switching element A bidirectional switch group including the bidirectional switch including the diodes and the bidirectional switches connecting the phase input terminals and the phase output terminals, and PWM controlling the bidirectional switch group. In the matrix converter device for converting the AC power supply voltage to an arbitrary cross-flow voltage and outputting from each phase output terminal,
In the dielectric strength test between the ground terminal and each phase input terminal and each phase output terminal, between the serial connection portion of the semiconductor switching elements constituting the bidirectional switch and the phase input terminal or phase output terminal A matrix converter device comprising means capable of switching connection so as to reduce impedance. Each phase input terminal connected to the AC power source, each phase output terminal for outputting an arbitrary cross-flow voltage, a ground terminal, and a connection body of two semiconductor switching elements and diodes connected in series in the forward direction are reversed. A bi-directional switch group composed of bi-directional switches connected in parallel, and the bi-directional switches connected between the phase input terminals and the phase output terminals; and PWM control the bi-directional switch group. In the matrix converter device for converting the AC power supply voltage to an arbitrary cross-flow voltage and outputting from each phase output terminal,
In a dielectric strength test between the ground terminal and each phase input terminal and each phase output terminal, a series connection portion of a semiconductor switching element and a diode constituting the bidirectional switch, and the phase input terminal or phase output terminal A matrix converter device comprising means capable of switching connection so as to reduce impedance between the two.

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