JP2007042535A - Electroluminescent device, manufacturing method of electroluminescent device, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an EL device which is equipped with an optical resonator having different wavelength for every pixel and can be formed comparatively easily and in high precision, a manufacturing method of the EL device, and an electronic equipment. <P>SOLUTION: This is a top emission type organic EL device 1 and has an optical resonator structure having a reflection layer 19 on the lower side of a positive electrode layer 12, and has an insulating protection layer 18 which is formed so as to cover the whole reflection layer 19 between the reflection layer 19 and the positive electrode layer 12. The insulating protection layer 18 has a refractive index (n) which has a corresponding relationship to the color of pixel for each of the formation region of the pixels 100(R), (G), (B). <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an electroluminescence device, a method for manufacturing an electroluminescence device, and an electronic apparatus.

Cellular phones, personal computers and PDAs (Personal Digital)
2. Description of the Related Art Light emitting devices such as organic electroluminescence (EL / Electroluminescence) devices have attracted attention as exposure heads in display devices used in electronic devices such as Assistants and image forming devices such as digital copying machines and printers. In constructing this type of light emitting device for color, conventionally, the material constituting the light emitting layer is changed for each pixel so that light of each color is emitted from each pixel.

On the other hand, an optical resonator is formed between a lower reflective layer formed on the lower side of the light emitting layer and an upper reflective layer formed on the upper side of the light emitting layer, and ITO (Indium Tin Oxide) or the like. A technique has been proposed in which the optical length of the optical resonator is changed for each pixel by changing the thickness of the anode made of the above, and light of each color is extracted from the light emitted from the light emitting element (see, for example, Patent Document 1).
Japanese Patent No. 2797883

  When a bottom emission type organic EL device that emits light to the substrate side as viewed from the light emitting layer is configured using the technique described in Patent Document 1, the lower reflective layer is formed of a semi-transmissive reflective layer. It will be. In addition, when configuring a top emission type organic EL device that emits light to the side opposite to the substrate as viewed from the light emitting layer, the lower reflective layer should be composed of a highly reflective metal film such as aluminum or silver. become.

  In order to form an anode with an ITO film, after forming the ITO film, a resist mask is formed on the ITO film using a photolithography technique and etching is performed. For this reason, in order to make the anode thickness different between the red pixel, the green pixel, and the blue pixel, it is necessary to repeat the above steps three or more times. As a result, the lower reflective layer is etched by the etching solution or etching gas used to etch the ITO film, resulting in a decrease in the reflective properties of the lower reflective layer and the lack of the lower reflective layer. A point is created. Such etching of the lower reflective layer is not limited to the end of the etching when the lower reflective layer is exposed from the ITO, and may occur immediately after the start of etching when the ITO has a minute hole.

  In order to change the thickness of the anode for each pixel, for example, a method of changing the etching time for each of the above three steps can be considered. However, if the etching time differs for each process, not only the process management becomes difficult, but also a long etching time occurs, resulting in inconvenience such as generation of side edges.

The present invention has been made in view of the above circumstances, and is an electroluminescence device provided with optical resonators having different wavelengths for each pixel, and can be formed relatively easily and with high accuracy. An object is to provide a device, a method for manufacturing an electroluminescent device, and an electronic apparatus.
In addition, the present invention is an electroluminescence device provided with optical resonators having different wavelengths for each pixel, and can avoid deterioration of the lower reflective layer for the optical resonator located on the lower layer side of the anode and is simple. It is an object of the present invention to provide an electroluminescent device, a method for manufacturing the electroluminescent device, and an electronic apparatus that can be manufactured.

In order to achieve the above object, an electroluminescent device of the present invention includes a light-transmitting anode layer, a functional layer including at least a light-emitting layer, and a cathode layer, which are stacked on a pixel corresponding to each of a plurality of colors on a substrate. An electroluminescence device that emits light to the side opposite to the substrate when viewed from the light emitting layer, wherein the light emitting element includes a reflective layer on a lower layer side of the anode layer A protective layer formed between the reflective layer and the anode layer so as to cover the entire reflective layer, the protective layer corresponding to the color of the pixel for each pixel It has the refractive index which has.
According to the present invention, an optical resonator that emits light of a desired color can be configured by adjusting the refractive index of the protective layer without changing the film thickness of each layer constituting the optical resonator. That is, in order to construct an optical resonator that emits a desired color, a desired optical length (for example, λ / 4) is provided between the reflective layer (lower reflective layer) and the cathode layer (upper reflective layer). It takes a thing. Conventionally, this optical length (optical distance) has been adjusted by changing the thickness of the anode. However, in the present invention, a desired optical length can be obtained by changing the refractive index of the protective layer for each pixel.
Therefore, conventionally, in order to form pixels of three colors, it is necessary to form anode layers having three different thicknesses, and at least three photolithography processes are required. Conventionally, the lower reflective layer mainly composed of aluminum or silver formed in the lower layer of the anode is very easily affected by the developer and the solvent of the stripping solution in the photolithography process, and easily deteriorates. According to the present invention, since the photolithography process can be omitted, the manufacturing process can be reduced and the reflection layer can be prevented from being deteriorated by the photolithography process.

In the electroluminescent device of the present invention, it is preferable that the protective layer has substantially the same thickness in the pixels of the plurality of colors.
According to the present invention, the thickness of each layer constituting the optical resonator can be made substantially the same in pixels of different colors. Conventionally, when a cathode made of MgAg or the like is formed, the cathode may be disconnected due to a step caused by a difference in layer (anode layer) thickness between pixels. In the present invention, the step can be almost eliminated, and the cathode can be prevented from being disconnected by the step.

In the electroluminescent device of the present invention, it is preferable that the reflective layer is made of a metal whose main component is aluminum or silver (the surface is in a mirror state).
ADVANTAGE OF THE INVENTION According to this invention, a reflective layer with a high reflectance can be comprised, and an electroluminescent apparatus with high light extraction efficiency can be provided.

In order to achieve the above object, a method of manufacturing an electroluminescent device according to the present invention includes a light-transmitting anode layer, a functional layer including at least a light-emitting layer, and a cathode layer on pixels corresponding to each of a plurality of colors on a substrate. The light-emitting element has an optical resonator structure including a reflective layer on the lower layer side of the anode layer, and emits light on the side opposite to the substrate when viewed from the light-emitting layer. A method of manufacturing an emitting electroluminescent device, wherein a step of forming a protective layer so as to cover the entire reflective layer between the reflective layer and the anode layer, and the protective layer are different for each pixel. And irradiating with light to form a refractive index corresponding to the color of the pixel for each pixel.
According to the present invention, by irradiating each pixel in the protective layer with predetermined light, a protective layer having a predetermined refractive index can be formed for each pixel. Therefore, according to the present invention, it is possible to eliminate the conventional photolithography process at the time of forming the anode layer, and to reduce the manufacturing process and improve the quality.

In the method for manufacturing an electroluminescence device of the present invention, it is preferable that the light applied to the protective layer is ultraviolet light.
According to the present invention, the optical length of the optical resonator can be optimized only by irradiating the protective layer with ultraviolet rays, and a highly efficient electroluminescence device can be easily manufactured.

In the method for manufacturing an electroluminescence device of the present invention, it is preferable that the light of the different modes is different in at least light intensity.
According to the present invention, the optical length of the optical resonator can be optimized only by adjusting the intensity of light applied to the protective layer, and a highly efficient electroluminescence device can be easily manufactured.

In order to achieve the above object, an electronic apparatus according to the present invention includes the electroluminescence device.
According to the present invention, an electronic device that can display a high-quality color image can be provided as a low-cost and highly reliable product.

  Embodiments of the present invention will be described below with reference to the drawings. In the drawings used for the following description, the scales of the layers and the members are made different in order to make the layers and the members large enough to be recognized on the drawings.

[First Embodiment]
(Basic configuration of EL device)
FIG. 1 is a cross-sectional view schematically showing the configuration of the organic electroluminescence device (organic EL device) according to the first embodiment of the present invention.

In FIG. 1, the organic EL device 1 of the present embodiment is a top emission type device that emits display light toward the side opposite to the substrate 11 when viewed from the light emitting layer 14, and is red (R), green ( The organic EL element 10 is formed in any of the pixels 100 (R), (G), and (B) of G) and blue (B). The organic EL element 10 includes a transparent anode layer 12 made of ITO or the like, a hole transport layer 13, a light emitting layer 14, an electron transport layer 15 and a semi-transmissive made of a magnesium-silver alloy on the upper layer side of a substrate 11 made of glass or the like. The cathode layer 16 having reflectivity is laminated in this order.
In the present invention, a pixel is a region where the organic EL element 10 corresponding to each color of red (R), green (G), and blue (B) is formed, and is an anode layer 16, at least a light emitting layer 14. The unit area | region corresponding to each color separately in which the light emitting element on which the functional layer containing cathode and the cathode layer 16 were laminated | stacked is shown.

  A reflective layer 19 (total reflective layer) made of aluminum, an aluminum alloy, silver, or a silver alloy is formed between the substrate 11 and the anode layer 12. An optical resonator 40 is formed between the lower reflective layer made of the reflective layer 19 and the upper reflective layer made of the cathode layer 16.

  Here, the hole transport layer 13 and the light emitting layer 14 used in the organic EL element 10 are made of the same material in any of the pixels 100 (R), (G), and (B), and the same film. It is thick. The organic EL element 10 generates white light inside.

  In the present embodiment, the anode layer 12 has substantially the same film thickness in any of the pixels 100 (R), (G), and (B). The film thickness of the anode layer 12 is, for example, 20 nm.

(Configuration of insulation protective layer)
In the present embodiment, a light-transmissive insulating protective layer 18 is formed between the reflective layer 19 and the anode layer 12 so as to cover the surface and side surfaces of the reflective layer 19. As such an insulating protective layer 18, for example, an epoxy resin having a thickness of about 100 nm is used. The refractive index of the insulating protective layer 18 is different between the pixels 100 (R), (G), and (B).
That is, the refractive index of the insulating protective layer 18 is
Pixel 100 (B) <Pixel 100 (G) <Pixel 100 (R)
It is. For example, the refractive index of the insulating protective layer 18 is set to the following value in each pixel 100 (R), (G), and (B).
Refractive index (n) of the insulating protective layer 18a in the pixel 100 (B) = 1.5
Refractive index (n) of the insulating protective layer 18b in the pixel 100 (G) = 1.8
Refractive index (n) of the insulating protective layer 18c in the pixel 100 (R) = 2.0

  Therefore, the optical length of the optical resonator 40 in each pixel 100 (R), (G), (B) is different in each pixel 100 (R), (G), (B). That is, the optical length is proportional to the product of film thickness and refraction. As a result, the optical resonators 40 in the respective pixels 100 (R), (G), and (B) have substantially the same film thickness but have different refractive indexes, and therefore have different optical lengths. The refractive index (n) of the insulating protective layers 18a, 18b, and 18c is such that the optical length of the optical resonator 40 of each pixel 100 (R), (G), and (B) is equal to each pixel 100 (R), ( G) and (B) are adjusted so that predetermined color light is emitted.

  In the organic EL element 10 configured as described above, when a current flows from the anode layer 12 to the cathode layer 16 through the hole transport layer 13 and the light emitting layer 14, the light emitting layer 14 emits light according to the amount of current at that time. The light emitted from the light emitting layer 14 passes through the cathode layer 16 and is emitted to the observer side, while the light emitted from the light emitting layer 14 toward the substrate 11 is formed below the anode layer 12. The reflected layer 19 reflects the light, passes through the cathode layer 16 and is emitted to the observer side. At that time, the light emitted from the light emitting layer 14 is multiple-reflected between the lower reflective layer (reflective layer 19) and the upper reflective layer (cathode layer 16) of the optical resonator 40, and the optical resonator 40 optical The chromaticity of light whose length corresponds to an integral multiple of ¼ wavelength can be improved. Accordingly, the organic EL element 10 generates white light internally, but emits red light from the pixel 100 (R) corresponding to red (R) and green from the pixel 100 (G) corresponding to green (G). Light is emitted, and blue light is emitted from the pixel 100 (B) corresponding to blue (B).

(Production method)
FIG. 2 is a schematic cross-sectional view showing the main procedure of the method for manufacturing the organic EL device 1.
In order to manufacture the organic EL device 1 configured as shown in FIG. 1, first, a metal film (aluminum, aluminum alloy, silver, or silver alloy) having light reflectivity is formed on the surface of the substrate 11 by sputtering or vacuum. After forming by vapor deposition or the like, the reflective layer 19 is formed by patterning using a photolithography technique.

  Next, an epoxy resin having a thickness of 100 nm and a refractive index of 1.5 is formed on the surface side of the reflective layer 19. Thereby, the entire surface of the reflective layer 19 is covered with the epoxy resin layer 18 ′. Next, as shown in FIG. 2, the photomask 80 is used to irradiate 2000 mJ ultraviolet rays onto the formation region of the pixel 100 (G) in the epoxy resin layer 18 ′. Further, the formation region of the pixel 100 (R) in the epoxy resin layer 18 ′ is irradiated with ultraviolet rays of 5000 mJ.

  Accordingly, the refractive index (n) of the insulating protective layer 18a in the pixel 100 (B) remains 1.5, and the refractive index (n) of the insulating protective layer 18b in the pixel 100 (G) is 1.8. Thus, the refractive index (n) of the insulating protective layer 18c in the pixel 100 (R) becomes 2.0, and the insulating protective layer 18 as shown in FIG. 1 is completed.

  Next, an ITO film (refractive index: 1.95) having a predetermined thickness (for example, 20 nm) is formed on the surface side of the insulating protective layer 18 by sputtering or the like. Thereafter, a resist mask is formed on the ITO film using a photolithography technique, and etching is performed to form the anode layer 12. Thereby, the anode layers 12 of all the pixels 100 (R), (G), and (B) are completed in one photolithography process.

  Next, the hole transport layer 13 and the light emitting layer 14 are sequentially formed using a droplet discharge method called a so-called inkjet method. In this droplet discharge method, a liquid material of the material constituting the hole transport layer 13 or the light emitting layer 14 is discharged as droplets from a droplet discharge head, and then dried to dry the hole transport layer 13 or the light emitting layer 14. As a fixing method. At that time, a partition wall (not shown) called a bank is formed around each of the pixels 100 (R), (G), and (B) so that the discharged droplets or liquid material does not protrude to the periphery. It is preferable to do.

  In adopting such a method, the hole transport layer 13 uses, for example, 3, 4-polyethylenediosithiophene / polystyrene sulfonic acid (PEDOT / PSS), which is a polyolefin derivative, as a hole injection material. It can be formed by discharging a dispersion obtained by dispersing as a main solvent to a predetermined region and drying it. In addition, the material for forming the hole transport layer 13 is not limited to the above-described materials, but polyphenylene vinylene, 1,1-bis- (4-N, 4-N,) whose polymer precursor is polytetrahydrothiophenylphenylene. N-ditolylaminophenyl) cyclohexane and the like can also be used.

  In addition, as a material for forming the light emitting layer 14, a polymer material, for example, a polymer material having a molecular weight of 1000 or more is preferably used. Specifically, a polyfluorene derivative, a polyphenylene derivative, polyvinylcarbazole, a polythiophene derivative, or a polymer material thereof, a perylene dye, a coumarin dye, a rhodamine dye, such as rubrene, perylene, 9,10-diphenylanthracene, What doped tetraphenyl butadiene, Nile red, coumarin 6, quinacridone, etc. is used. As such a polymer material, a π-conjugated polymer material in which π electrons of a double bond are non-polarized at the top of the polymer is also a conductive polymer, so that it is excellent in light emitting performance. Used for. In particular, a compound having a fluorene skeleton in the molecule, that is, a polyfluorene compound is more preferably used. In addition to such materials, for example, a composition for an organic EL device disclosed in JP-A-11-40358, that is, a precursor of a conjugated polymer organic compound, and at least one kind for changing light emission characteristics A composition for an organic EL device comprising the above fluorescent dye can also be used as a light emitting layer forming material.

  After the hole transport layer 13 and the light emitting layer 14 are formed in this way, the electron transport layer 15 and the cathode layer 16 are sequentially formed. As a result, the organic EL device 1 shown in FIG. 1 is completed.

(Conventional organic EL device)
FIG. 3 is a schematic cross-sectional view showing an example of a conventional organic EL device 1 ′. In FIG. 3, the same reference numerals are assigned to the components corresponding to the components of the organic EL device 1 of FIG. The main differences between the conventional organic EL device 1 ′ and the organic EL device 1 of the present embodiment are the insulating protective layer 18 and the anode layer 12. The insulating protective layer 18 of the conventional organic EL device 1 ′ is made of SiN having a thickness of 30 nm and a refractive index of 1.8 in common to each pixel 100 (R), (G), and (B). The anode layer 12 of the conventional organic EL device 1 ′ is made of ITO having a refractive index of 1.95. The pixel 100 (R) has a film thickness of 90 nm, the pixel 100 (G) has a film thickness of 50 nm, and the pixel 100 (B) has a film thickness. The film thickness is 20 nm.

(Effect of this embodiment)
According to this embodiment, the formation process of the anode layer 12 can be significantly reduced as compared with the conventional organic EL device and the manufacturing method thereof. Conventionally, anode layers 12 having three different thicknesses have to be formed in order to form pixels of three colors (see FIG. 3). For this reason, conventionally, at least three photolithography processes are required to form the anode layer 12. On the other hand, in this embodiment, since the thickness of the anode layer 12 is the same in all the pixels, the anode layer 12 of all the pixels can be formed by one photolithography process, and the number of processes can be reduced. it can.

  Furthermore, according to this embodiment, the optical length of the optical resonator 40 of each pixel can be optimized only by irradiation with light (ultraviolet rays). Therefore, the organic EL device 1 including a highly efficient optical resonator can be easily realized.

  Furthermore, according to the present embodiment, since the insulating protective layer 18 is formed between the reflective layer 19 and the anode layer 12, the reflective layer 19 is deteriorated by the etching process when forming the anode layer 12. You can avoid that. In particular, in the present embodiment, the light generated in the light emitting layer 14 is emitted to the side opposite to the substrate 11 when viewed from the light emitting layer 14. In such a case, the reflective layer 19 is required to have a high reflectance. However, according to the present embodiment, the reflective layer 19 is not deteriorated by etching when the anode layer 12 is formed. High reflective layer 19 can be formed. Therefore, this embodiment can provide an organic EL device with high light extraction efficiency.

  Furthermore, according to the present embodiment, the insulating protective layer 18 has substantially the same thickness in all pixels, and the other layers can also have substantially the same thickness in all pixels. In view of this, the organic EL device 1 according to the present embodiment indicates that the cathode layer 16 is disconnected due to a step caused by a difference in the thickness of the layer (anode layer 12) between pixels as in the conventional organic EL device 1 ′. Can be avoided.

  Furthermore, according to the present embodiment, each of the plurality of pixels 100 corresponds to red (R), green (G), and blue (B), but the hole transport layer 13 that constitutes the organic EL element 10. The material of the organic functional layer such as the light-emitting layer 14 is the same regardless of the corresponding color, and which color corresponds is determined by the refractive index of the insulating protective layer 18 (18a, 18b, 18c). ing. Therefore, regardless of which color the pixel 100 corresponds to, the lifetime of the organic EL element 10 is substantially the same, so that the lifetime of the entire organic EL device 1 can be extended. Further, when the organic EL device 1 is manufactured, the same material is used between the pixels 100, so that productivity can be improved.

[Second Embodiment]
FIG. 4 is a cross-sectional view schematically showing the configuration of the organic EL device according to the second embodiment of the present invention. FIG. 5 is a schematic cross-sectional view showing another example of a conventional organic EL device.

  Similarly to the first embodiment, the organic EL device 1 shown in FIG. 4 is a top emission type device that emits display light toward the side opposite to the substrate 11 when viewed from the light emitting layer 14, and is red (R). The organic EL element 10 is formed in any of the green (G) and blue (B) pixels 100 (R), (G), and (B). The organic EL element 10 includes a transparent anode layer 12 made of ITO or the like, a hole transport layer 13, a light emitting layer 14, an electron transport layer 15 and a semi-transmissive made of a magnesium-silver alloy on the upper layer side of a substrate 11 made of glass or the like. The cathode layer 16 having reflectivity is laminated in this order.

  A reflective layer 19 (total reflection layer) made of aluminum, an aluminum alloy, silver, or a silver alloy is formed between the substrate 11 and the anode layer 12. The optical resonator 40 is formed between the cathode layer 16 and the upper reflective layer. Furthermore, the hole transport layer 13 and the light emitting layer 14 used in the organic EL element 10 are made of the same material in any of the pixels 100 (R), (G), and (B). Generates white light internally.

  In the present embodiment, the anode layer 12 has substantially the same film thickness in any of the pixels 100 (R), (G), and (B). The film thickness of the anode layer 12 is, for example, 20 nm.

In the present embodiment, a light-transmissive insulating protective layer 18 is formed between the reflective layer 19 and the anode layer 12 so as to cover the surface and side surfaces of the reflective layer 19. As such an insulating protective layer 18, for example, an epoxy resin having a thickness of about 100 nm is used. The refractive index of the insulating protective layer 18 is different between the pixels 100 (R), (G), and (B).
That is, the refractive index of the insulating protective layer 18 is
Pixel 100 (B) <Pixel 100 (G) <Pixel 100 (R)
It is. For example, the refractive index of the insulating protective layer 18 is set to the following value in each pixel 100 (R), (G), and (B).
Refractive index (n) of the insulating protective layer 18a in the pixel 100 (B) = 1.5
Refractive index (n) of the insulating protective layer 18b in the pixel 100 (G) = 1.8
Refractive index (n) of the insulating protective layer 18c in the pixel 100 (R) = 2.0

  Therefore, the optical length of the optical resonator 40 in each pixel 100 (R), (G), (B) is different in each pixel 100 (R), (G), (B). That is, the optical length is proportional to the product of film thickness and refraction. As a result, the optical resonators 40 in the respective pixels 100 (R), (G), and (B) have substantially the same film thickness but have different refractive indexes, and therefore have different optical lengths. The refractive index (n) of the insulating protective layers 18a, 18b, and 18c is such that the optical length of the optical resonator 40 of each pixel 100 (R), (G), and (B) is equal to each pixel 100 (R), ( G) and (B) are adjusted so that predetermined color light is emitted.

  The manufacturing method of the organic EL device 1 having such a configuration can be the same manufacturing method as in the first embodiment. In particular, the method for forming the insulating protective layer 18 is preferably the same as the method for forming the anode layer 12 of the first embodiment.

  According to the present embodiment, the step of forming the anode layer 12 can be reduced as compared with the conventional organic EL device shown in FIG. Further, the insulating protective layer 18 can prevent the reflective layer 19 from being deteriorated by the etching during the formation of the anode layer 12. Furthermore, the optical length of the optical resonator 40 of each pixel can be optimized only by light (ultraviolet) irradiation. Therefore, the organic EL device 1 including a highly efficient optical resonator can be easily realized. Furthermore, according to the present embodiment, the insulating protective layer 18 has substantially the same thickness in all pixels, and the other layers can also have substantially the same thickness in all pixels. In view of this, the organic EL device 1 according to the present embodiment indicates that the cathode layer 16 is disconnected due to a step caused by a difference in the thickness of the layer (anode layer 12) between pixels as in the conventional organic EL device 1 ′. Can be avoided. Therefore, according to this embodiment, the same effect as that of the first embodiment can be obtained.

  Furthermore, in the present embodiment, red (R), green (G), and blue (B) are positioned on the upper layer side of the cathode layer 16 at positions corresponding to the pixels 100 (R), (G), and (B). The transparent substrate 20 on which the color filters 21 (R), (G), and (B) are formed is bonded by an epoxy-based transparent adhesive layer 30. Therefore, according to the present embodiment, light with high color purity can be emitted from each of the pixels 100 (R), (G), and (B) and the color reproduction range can be expanded as compared with the first embodiment. .

[Other Embodiments]
In the above embodiment, a metal mainly composed of aluminum is used for the reflective layer 19, but the reflective layer 19 may be formed using a metal mainly composed of silver. In this way, the reflectance at the reflective layer 19 can be increased, and the light extraction efficiency of the organic EL device 1 can be increased.

  Moreover, in the said embodiment, although the photosensitive epoxy-type resin was used for the insulation protective layer 18, as long as the formation material of the insulation protective layer 18 is a material from which a refractive index changes with light irradiation, it is other materials, such as an inorganic material. It may be.

  In the above embodiment, there are three layers, the hole transport layer 13, the light emitting layer 14, and the electron transport layer 15, between the anode layer 12 and the cathode layer 16, but between the anode layer 12 and the cathode layer 16. Further, a structure in which a plurality of layers (for example, an electron injection layer, a hole injection layer, a second light emitting layer, and the like) are further included may be employed. These may be a high molecular type or a low molecular type.

[Example of application to display devices]
The organic EL device 1 to which the present invention is applied can be used as a passive matrix display device or an active matrix display device. Among these display devices, the active matrix display device can have the electrical configuration shown in FIG.

  FIG. 6 is a circuit diagram showing an electrical configuration of an active matrix organic EL device according to an embodiment of the present invention. The organic EL device 1 shown in FIG. 6 includes a plurality of scanning lines 63, a plurality of data lines 64 extending in a direction intersecting with the extending direction of the scanning lines 63, and the data lines 64 in parallel. And a plurality of common power supply lines 65 and pixels 100 (light emitting regions) arranged corresponding to the intersections of the data lines 64 and the scanning lines 63. The pixels 100 are arranged in a matrix in the image display area.

  The data line 64 is connected to a data line driving circuit 51 including a shift register, a level shifter, a video line, and an analog switch. The scanning line 63 is connected to a scanning line driving circuit 54 including a shift register and a level shifter. Each pixel 100 holds a pixel switching thin film transistor 6 to which a scanning signal is supplied to the gate electrode through the scanning line 63 and an image signal supplied from the data line 64 through the thin film transistor 6. The storage capacitor 33, the current control thin film transistor 7 to which the image signal held by the storage capacitor 33 is supplied to the gate electrode 43, and the common supply line 65 when electrically connected to the common power supply line 65 through the thin film transistor 7 The organic EL element 10 into which a drive current flows from the electric wire 65 is configured. In the organic EL device 1, each pixel 100 corresponds to one of red (R), green (G), and blue (B).

[Example of mounting on electronic devices]
A light-emitting device (EL device) to which the present invention is applied can be used as a display device in various electronic devices such as a mobile phone, a personal computer, and a PDA. The light emitting device to which the present invention is applied can also be used as an exposure head in an image forming apparatus such as a digital copying machine or a printer.

  The technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention, and the specific materials and layers mentioned in the embodiment can be added. The configuration is merely an example, and can be changed as appropriate.

  For example, in the above embodiment, color display is performed with pixels of three primary colors of RGB. However, the present invention is not limited to this, and a color display may be performed with pixels of two primary colors or four or more primary colors. For example, in the case of a configuration in which color display is performed with four primary colors, a pixel that emits one of cyan, magenta, and yellow is added to RGB pixels.

  Moreover, in the said embodiment, although the example comprised using the organic EL element as a pixel about the display apparatus which concerns on this invention is given, this invention is not limited to this, The display apparatus which concerns on this invention is Various electro-optical elements other than the organic EL element can be used. In addition, the display device according to the present invention can be applied to an illumination device other than the display device such as an electro-optical device. Here, the illumination device is not a display device that displays an image or information, but emits predetermined light to an irradiated object.

  The display device (EL device) according to the present invention can also be applied to operation panels, various instruments, monitors having an operation unit, and the like of various home appliances.

1 is a cross-sectional view illustrating a configuration of an organic EL device according to a first embodiment of the present invention. It is sectional drawing which shows the formation method of the insulating protective layer in an organic electroluminescent apparatus same as the above. It is a schematic cross section showing an example of a conventional organic EL device. It is sectional drawing which shows the structure of the organic electroluminescent apparatus concerning 2nd Embodiment of this invention. It is a schematic cross section which shows the other example of the conventional organic EL apparatus. It is a circuit diagram which shows the electrical structural example of the organic electroluminescent apparatus which concerns on embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Organic EL apparatus, 10 ... Organic EL element, 11 ... Board | substrate, 12 ... Anode layer, 13 ... Hole transport layer, 14 ... Light emitting layer, 15 ... Electron transport layer, 16 ... Cathode layer (upper layer side reflection layer), DESCRIPTION OF SYMBOLS 18 ... Insulating protective layer, 19 ... Reflection layer (lower layer side reflection layer), 21 (R), (G), (B) ... Color filter, 40 ... Optical resonator, 100 (R), (G), (B ) ... Pixel

Claims (7)

On a substrate, a pixel corresponding to each of a plurality of colors is provided with a light-emitting element in which a light-transmitting anode layer, a functional layer including at least a light-emitting layer, and a cathode layer are stacked. An electroluminescence device that emits light to the opposite side,
The light emitting element forms an optical resonator structure including a reflective layer on the lower layer side of the anode layer,
A protective layer formed between the reflective layer and the anode layer so as to cover the entire reflective layer;
The electroluminescent device according to claim 1, wherein the protective layer has a refractive index corresponding to the color of each pixel.   The electroluminescent device according to claim 1, wherein the protective layer has substantially the same thickness in the pixels of the plurality of colors.   The electroluminescent device according to claim 1, wherein the reflective layer is made of a metal mainly composed of aluminum or silver. On a substrate, a pixel corresponding to each of a plurality of colors is provided with a light-transmitting anode layer, a light-emitting element in which a functional layer including at least a light-emitting layer and a cathode layer are stacked, and the light-emitting element is on a lower layer side of the anode layer Forming an optical resonator structure including a reflective layer, and a method of manufacturing an electroluminescence device that emits light to the side opposite to the substrate when viewed from the light emitting layer,
Forming a protective layer so as to cover the entire reflective layer between the reflective layer and the anode layer;
And a step of irradiating light in a different manner for each of the pixels with respect to the protective layer so that each pixel has a refractive index corresponding to the color of the pixel. Production method.   The method for manufacturing an electroluminescent device according to claim 4, wherein the light applied to the protective layer is ultraviolet light.   6. The method of manufacturing an electroluminescent device according to claim 4, wherein the light of the different mode is at least light having a different intensity. An electronic apparatus comprising the electroluminescence device according to any one of claims 1 to 3 or the electroluminescence device produced by the production method according to any one of claims 4 to 6. .

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