JP2007035999A - Wafer holding body for wafer prober, and wafer prober for mounting the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wafer holding body for wafer probers capable of accurate measurement by reducing deformation (deflection) in a chuck top, to provide a heater unit for mounting the wafer holding body, and to provide the wafer prober having the heater unit. <P>SOLUTION: The wafer holding body for wafer probers is used to inspect a semiconductor, and comprises at least the chuck top and a support for supporting the chuck top, and then the ratio (diameter/thickness) of the maximum diameter of the chuck top to the maximum thickness is 5 or larger and 100 or smaller. The ratio of the maximum diameter to the maximum thickness is preferably 10 or larger and 50 or smaller. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a wafer holder and heater unit used in a wafer prober for mounting a semiconductor wafer on a wafer mounting surface and inspecting the electrical characteristics of the wafer by pressing a probe card against the wafer. The present invention relates to a wafer prober.

  Conventionally, in a semiconductor inspection process, a heat treatment is performed on a semiconductor substrate (wafer) that is an object to be processed. In other words, the wafer is heated to a temperature higher than the normal use temperature, and semiconductor chips that may become defective are accelerated and removed, and burn-in is performed to prevent the occurrence of defects after shipment. . In the burn-in process, after a semiconductor circuit is formed on a semiconductor wafer and before cutting into individual chips, the electrical performance of each chip is measured while heating the wafer to remove defective products. In this burn-in process, reduction of process time is strongly demanded in order to improve throughput.

  In such a burn-in process, a heater for holding the semiconductor substrate and heating the semiconductor substrate is used. A conventional heater is made of metal because the entire back surface of the wafer needs to be in contact with the ground electrode. A wafer on which a circuit is formed is placed on a metal flat heater, and the electrical characteristics of the chip are measured. At the time of measurement, a probe called a probe card having a large number of electrode pins for energization is pressed against the wafer with a force of several tens kgf to several hundred kgf. Poor contact may occur between them. Therefore, in order to maintain the rigidity of the heater, it is necessary to use a thick metal plate having a thickness of 15 mm or more, and it takes a long time to raise and lower the temperature of the heater.

  In the burn-in process, electricity is supplied to the chip and the electrical characteristics are measured. With the recent increase in the output of the chip, the chip generates a large amount of heat when measuring the electrical characteristics. Since it may break down due to heat generation, it is required to cool rapidly after measurement. In addition, it is required to be as uniform as possible during the measurement. Therefore, copper (Cu) having a high thermal conductivity of 403 W / mK has been used as the metal material.

  Therefore, Patent Document 1 proposes a wafer prober that is difficult to deform and has a small heat capacity by forming a thin metal layer on the surface of a ceramic substrate that is thin but highly rigid and difficult to deform, instead of a thick metal plate. ing. According to this document, since the rigidity is high, contact failure does not occur and the heat capacity is small, so that the temperature can be raised and lowered in a short time. And it is supposed that an aluminum alloy, stainless steel, etc. can be used as a support stand for installing a wafer prober.

  However, as described in Patent Document 1, if the wafer prober is supported only at its outermost periphery, the wafer prober may be warped by pressing the probe card. Met.

  Furthermore, in recent years, with the miniaturization of semiconductor processes, the load per unit area during probing increases, and the accuracy of alignment between the probe card and the prober is also required. The prober normally repeats the operation of heating the wafer to a predetermined temperature, moving to a predetermined position during probing, and pressing the probe card. At this time, in order to move the prober to a predetermined position, high positional accuracy is also required for the drive system.

  However, when the wafer is heated to a predetermined temperature, that is, a temperature of about 100 to 200 ° C., the heat is transmitted to the drive system, and the metal parts of the drive system are thermally expanded, thereby impairing accuracy. is there. Furthermore, due to an increase in load during probing, the rigidity of the prober itself on which the wafer is placed has been required. That is, if the prober itself is deformed by a load during probing, the pins of the probe card cannot be uniformly contacted with the wafer, and inspection cannot be performed, or worst, the wafer is damaged. For this reason, in order to suppress the deformation of the prober, there is a problem that the prober is enlarged and its weight increases, and this weight increase affects the accuracy of the drive system. Furthermore, with the large size of the prober, there has been a problem that the temperature of the prober is increased and the cooling time becomes very long and the throughput is lowered.

  Further, in order to improve the throughput, a cooling mechanism is often provided in order to improve the temperature raising / lowering speed of the prober. However, conventionally, the cooling mechanism is air-cooled as in Patent Document 1, for example, or a cooling plate is provided directly below the metal heater. In the former case, there is a problem that the cooling rate is slow because of air cooling. Even in the latter case, since the cooling plate is made of metal and the probe card pressure is directly applied to the cooling plate at the time of probing, there is a problem that it is easily deformed.

In addition, the prober is deformed by applying a load to the chuck top due to stress applied during probing. When the deflection due to this deformation is large, there is a variation in the contact state between the probe pins attached to the probe card and a large amount of the wafer, an error occurs during measurement, and there is a problem that accurate evaluation cannot be performed.
JP 2001-033484 A

  The present invention has been made to solve the above problems. That is, the present invention provides a wafer prober wafer holder capable of realizing accurate measurement by reducing deformation (deflection) of the chuck top and further improving heat uniformity, and a heater unit equipped with the wafer holder, and the heater unit It is an object of the present invention to provide a wafer prober provided with

  A wafer holder for a wafer prober according to the present invention is a wafer holder for a wafer prober for inspecting a semiconductor, and the holder comprises at least a chuck top and a support that supports the chuck top, and the chuck The ratio (diameter / thickness) of the maximum diameter and the maximum thickness of the top is 5 or more and 100 or less. The ratio of the maximum diameter to the maximum thickness is preferably 10 or more and 50 or less.

  The material of the chuck top is preferably a composite of metal and ceramic, and more preferably a composite of aluminum and silicon carbide or a composite of silicon and silicon carbide. The chuck top may be made of ceramic.

  The material of the support is preferably ceramics or a composite of two or more kinds of ceramics, more preferably alumina, silicon nitride, mullite, or a composite of alumina and mullite.

  A heater unit for a wafer prober provided with a wafer holder for a wafer prober as described above, or a wafer prober provided with the heater unit.

  According to the present invention, since the deformation (deflection) of the chuck top can be reduced, it is possible to provide a wafer prober capable of accurately measuring the electrical characteristics of the wafer without damaging the wafer.

  An embodiment of the present invention will be described with reference to FIG. FIG. 1 is an example of an embodiment of the present invention. A wafer holder 1 for a wafer prober according to the present invention includes a chuck top 2 having a chuck top conductor layer 3 and a support 4 that supports the chuck top, and a part between the chuck top 2 and the support 4. There are gaps 5 in them. By having this void 5, the heat insulation effect can be enhanced. There are no particular restrictions on the shape of the gap, and the shape may be such that the amount of heat or cold generated at the chuck top transmitted to the support is minimized. It is preferable that the support 4 has a bottomed cylindrical shape because the contact area between the chuck top and the support can be reduced and the gap 5 can be easily formed. By forming such a gap 5, most of the space between the chuck top and the support becomes an air layer, and an efficient heat insulating structure can be obtained.

  The ratio (diameter / thickness) of the maximum diameter and the maximum thickness of the chuck top is 5 or more and 100 or less. When this ratio exceeds 100, the chuck top is deflected by a load applied by probing, and the flatness and parallelism of the chuck top upper surface are remarkably deteriorated. Therefore, it has been found that accurate measurement cannot be performed due to poor contact of the probe pin. Further, when the ratio is less than 5, it is affected by heat from the side surface of the chuck top. That is, it has been found that the area of the outer peripheral surface becomes too large compared to the area of the upper and lower surfaces, and cannot be controlled only by the heat balance from the upper and lower surfaces. As a result, it was found that the temperature uniformity of the wafer mounting surface of the chuck top deteriorates and accurate measurement cannot be performed. The ratio of the maximum diameter to the maximum thickness is more preferably 10 or more and 50 or less. In particular, when the Young's modulus of the material used for the chuck top is 250 GPa or more, the ratio of the maximum diameter to the maximum thickness is effective. In the structure in which the gap 5 is provided, the deflection of the load is likely to occur, so the ratio between the maximum diameter and the maximum thickness is more important.

  The chuck top is preferably provided with a heating element 6. This is because in recent semiconductor probing, it is often necessary to heat the wafer to a temperature of 100 to 200 ° C. For this reason, if it is not possible to prevent the heat of the heating body that heats the chuck top from being transmitted to the support, heat is transmitted to the drive system provided at the bottom of the wafer prober support, and due to the difference in thermal expansion of each component, This causes a deviation in machine accuracy, which causes a significant deterioration in the flatness and parallelism of the chuck top upper surface (wafer mounting surface). However, since this structure is a heat insulating structure, the flatness parallelism is not significantly deteriorated. Furthermore, since it is a hollow structure, weight reduction can be achieved compared with a cylindrical support.

  As shown in FIG. 2, the heating element 6 is preferably a structure in which a resistance heating element 61 is sandwiched between insulators 62 such as mica because the structure is simple. A metal material can be used for the resistance heating element. For example, nickel, stainless steel, silver, tungsten, molybdenum, chromium, and alloys of these metals, for example, metal foils can be used. Of these metals, stainless steel and nichrome are preferred. When stainless steel or nichrome is processed into the shape of a heating element, a resistance heating element circuit pattern can be formed with relatively high accuracy by a technique such as etching. In addition, since it is inexpensive and has oxidation resistance, it can withstand long-term use even at high temperatures, which is preferable. The insulator that sandwiches the heating element is not particularly limited as long as it has heat resistance. For example, as described above, there are no particular restrictions such as mica, silicon resin, epoxy resin, and phenol resin. In addition, when the heating element is sandwiched between such insulating resins, a filler can be dispersed in the resin in order to transfer the heat generated by the heating element to the chuck top more smoothly. The role of the filler dispersed in the resin is to increase the thermal conductivity of silicon resin, etc., and the material is not particularly limited as long as there is no reactivity with the resin. For example, boron nitride, aluminum nitride, alumina, silica Can raise the substance. The heating element can be fixed to the mounting portion by a mechanical method such as screwing.

  The Young's modulus of the support is preferably 200 GPa or more. When the Young's modulus of the support is less than 200 GPa, the thickness of the bottom cannot be reduced, so that the volume of the gap cannot be secured sufficiently and a heat insulating effect cannot be expected. Furthermore, a space for mounting a cooling module described later cannot be secured. A more preferable Young's modulus is 300 GPa or more. Use of a material having a Young's modulus of 300 GPa or more is particularly preferable because deformation of the support can be significantly reduced, and the support can be further reduced in size and weight.

  Moreover, it is preferable that the heat conductivity of a support body is 40 W / mK or less. When the thermal conductivity of the support exceeds 40 W / mK, the heat applied to the chuck top is easily transmitted to the support and affects the accuracy of the drive system, which is not preferable. In recent years, since a high temperature of 150 ° C. is required as a temperature during probing, the thermal conductivity of the support is particularly preferably 10 W / mK or less. A more preferable thermal conductivity is 5 W / mK or less. This is because the amount of heat transferred from the support to the drive system is significantly reduced when the thermal conductivity is this level. The specific material of the support that satisfies these conditions is preferably mullite or silicon nitride, alumina, or a composite of mullite and alumina (mullite-alumina composite). In particular, mullite is preferable because it has a low thermal conductivity and a large heat insulating effect, and alumina is preferable because it has a high Young's modulus and high rigidity. The mullite-alumina composite is generally preferable because it has a thermal conductivity smaller than that of alumina and a Young's modulus larger than that of mullite.

  The wall thickness of the cylindrical portion of the bottomed cylindrical support is preferably 20 mm or less. If it exceeds 20 mm, the amount of heat transfer from the chuck top to the support increases, which is not preferable. For this reason, the thickness of the cylindrical portion of the support that supports the chuck top is preferably 10 mm or less. However, if the wall thickness is less than 1 mm, the probe card is pressed against the wafer when inspecting the wafer. This is preferable because the cylindrical portion of the support is deformed or worst damaged by the pressing pressure at that time. Absent. The most preferred thickness is 10 mm to 15 mm. Furthermore, the thickness of the portion of the cylindrical portion that contacts the chuck top is preferably 2 to 5 mm. This thickness is preferable because the balance between the strength of the support and the heat insulation is good.

  Moreover, it is preferable that the height of the cylindrical part of a support body is 10 mm or more. If it is less than 10 mm, the pressure from the probe card is applied to the chuck top at the time of wafer inspection, and further transmitted to the support, which causes the bottom of the support to bend, and this deteriorates the flatness of the chuck top. .

  The thickness of the bottom of the support is preferably 10 mm or more. If the thickness of the bottom of the support is less than 10 mm, the pressure from the probe card is applied to the chuck top during wafer inspection and is further transmitted to the support, resulting in deflection at the bottom of the support, and thus the flatness of the chuck top is reduced. It is not preferable because it deteriorates. Preferably, it is 10 mm to 35 mm. If it is 35 mm or less, it can reduce in size and is suitable. Moreover, it is also possible to have a structure in which the cylindrical portion and the bottom portion of the support are separated from each other. In this case, since the separated cylindrical part and the bottom part have an interface with each other, this interface becomes a thermal resistance layer, and heat transmitted from the chuck top to the support is interrupted at this interface, so that the temperature of the bottom part is unlikely to rise. Therefore, it is preferable.

  The support surface of the support that supports the chuck top preferably has a heat insulating structure. As this heat insulating structure, a heat insulating structure can be formed by forming a notch groove in the support and reducing the contact area between the chuck top and the support. It is also possible to form a heat insulation structure by forming a notch groove in the chuck top. In this case, it is necessary that the chuck top has a Young's modulus of 250 GPa or more. That is, since the pressure of the probe card is applied to the chuck top, if there is a notch, if the material has a small Young's modulus, the amount of deformation is inevitably large, and if the amount of deformation is large, the wafer breaks, The chuck top itself may be damaged. However, it is preferable to form a notch in the support because the above problem does not occur. As the shape of the notch, as shown in FIG. 3, a concentric groove 21 is formed, a groove 22 is formed radially as shown in FIG. 4, or a plurality of protrusions are formed, etc. There is no particular restriction on the shape. However, it is necessary to make it symmetrical in any shape. If the shape is not symmetrical, the pressure applied to the chuck top cannot be uniformly distributed, and this is unfavorable because it affects deformation and breakage of the chuck top.

  Further, as a form of the heat insulating structure, it is preferable to install a plurality of columnar members 23 between the chuck top and the support as shown in FIG. Preferably, there are eight or more concentric circles that are equally or similar to each other. Particularly in recent years, since the size of the wafer has increased to 8 to 12 inches, if the quantity is smaller than this, the distance between the columnar members becomes longer, and the pins of the probe card are placed on the wafer mounted on the chuck top. Since it becomes easy to generate | occur | produce between columnar members when pressing, it is not preferable. Compared to the integrated type, when the contact area with the chuck top is the same, two interfaces can be formed between the chuck top and the columnar member, and between the columnar member and the support. Since the heat resistance layer can be increased by a factor of 2, it is possible to effectively insulate the heat generated at the chuck top. The columnar member may have a cylindrical shape, a triangular column, a quadrangular column, or any polygonal shape, and there is no particular limitation on the shape. In any case, the heat from the chuck top to the support can be blocked by inserting the columnar member in this way.

The columnar member used for the heat insulating structure preferably has a thermal conductivity of 30 W / mK or less. If the thermal conductivity is higher than this, the heat insulating effect is lowered, which is not preferable. As the material of the columnar member, use a heat resistant resin such as Si ₃ N ₄ , mullite, mullite-alumina composite, steatite, cordierite, stainless steel, glass (fiber), polyimide, epoxy, phenol, or a composite thereof. Can do.

  The surface roughness of the contact portion between the support and the chuck top or the columnar member is preferably Ra 0.1 μm or more. When the surface roughness is less than Ra 0.1 μm, the contact area between the support and the chuck top or the columnar member increases and the gap between the two becomes relatively small. This is not preferable because the amount of heat transfer increases. There is no particular upper limit on the surface roughness. However, when the surface roughness Ra is 5 μm or more, the cost for treating the surface may increase. As a method for setting the surface roughness to Ra 0.1 μm or more, it is preferable to perform a process such as polishing or sandblasting. However, in this case, it is necessary to make the polishing conditions and blasting conditions appropriate and control them to Ra 0.1 μm or more.

  The surface roughness of the bottom of the support is preferably Ra 0.1 μm or more. Similarly to the above, since the surface roughness of the bottom of the support is rough, the amount of heat transferred to the drive system can be reduced. Moreover, when the bottom part and cylindrical part of the said support body can be isolate | separated, it is preferable that at least one of the surface roughness of the contact part is Ra0.1micrometer or more. When the surface roughness is smaller than this, the heat shielding effect from the cylindrical portion to the bottom is small. Furthermore, the surface roughness of the contact surface of the columnar member with the support, and further the contact surface with the chuck top is preferably Ra 0.1 μm or more. Even with this columnar member, the transfer of heat to the support can be reduced by increasing the surface roughness. As described above, the amount of heat transferred to the bottom of the support can be reduced by forming an interface in each member and setting the surface roughness of the interface to Ra 0.1 μm or more. The amount of electric power supplied to can also be reduced.

  The perpendicularity between the contact surface between the outer peripheral portion of the cylindrical portion of the support and the chuck top of the support or the contact surface between the outer peripheral portion of the cylindrical portion of the support and the chuck top of the columnar member is 100 mm in measurement length. Preferably, it is 10 mm or less. For example, if the squareness exceeds 10 mm, it is not preferable because the cylindrical portion itself is likely to be deformed when the pressure applied from the chuck top is applied to the cylindrical portion of the support.

  A metal layer is preferably formed on the surface of the support. An electromagnetic wave generated from a heating element for heating the chuck top becomes a noise and has an effect when inspecting the wafer, but it is preferable to form a metal layer on the support because the electromagnetic wave can be blocked. There is no restriction | limiting in particular as a method of forming a metal layer. For example, a conductive paste in which glass frit is added to metal powder such as silver, gold, nickel, or copper may be applied and baked with a brush or the like.

  Further, a metal such as aluminum or nickel may be formed by thermal spraying. It is also possible to form a metal layer on the surface by plating. It is also possible to combine these methods. That is, after baking the conductor paste, a metal such as nickel may be plated, or the plating may be formed after thermal spraying. Of these methods, plating or thermal spraying is particularly preferable. Plating is preferable because it has high adhesion strength and high reliability. Thermal spraying is preferable because a metal film can be formed at a relatively low cost.

  The metal layer may include a conductor on at least a part of the surface of the support. The material to be used is not particularly limited as long as it is a conductor. For example, stainless steel, nickel, aluminum, etc. can be mentioned.

  In the method including a conductor, a ring-shaped conductor can be attached to the side surface of the support. The metal foil of the said material can be shape | molded in a ring shape with a dimension larger than the outer diameter of a support body, and this can be attached to the side surface of a support body. Moreover, you may attach a metal foil or a metal plate to the bottom face part of a support body, and can heighten the effect which interrupts | blocks electromagnetic waves more by connecting with the metal foil attached to the side surface. In addition, using the space inside the support, a metal foil or a metal plate may be attached in the bottomed cylindrical space, and the blocking effect can be further enhanced by connecting to the metal foil attached to the side and bottom surfaces. . Adopting such a method is preferable because the above-described effects can be obtained at a relatively low cost compared to the case of applying plating or conductive paste. Although there is no restriction | limiting in particular about the fixing method of metal foil and a metal plate, and a support body, For example, metal foil and a metal plate can be attached to a support body using a metal screw. Moreover, it is preferable to integrate the metal foil and metal plate of the bottom face part and the side face part of the support.

Further, as shown in FIG. 6, a support bar 7 is preferably provided near the center of the support 4. This support bar can suppress deformation of the chuck top when the probe card is pressed against the chuck top. At this time, the material of the support rod at the center is preferably the same as the material of the support. Since both the support and the support bar receive heat from the heating body that heats the chuck top, they expand thermally. If the material of the support is different at this time, a step is generated between the support and the support rod due to the difference in thermal expansion coefficient, which is not preferable because the chuck top is easily deformed. Although there is no restriction | limiting in particular as a magnitude | size of a support rod, It is preferable that a cross-sectional area is 0.1 cm < ² > or more. When the cross-sectional area is less than this, the effect of support is not sufficient, and the support rod is easily deformed, which is not preferable. The cross-sectional area is preferably 100 cm ² or less. When the cross-sectional area is larger than this, as will be described later, the size of the cooling module inserted into the cylindrical portion of the support is reduced, and cooling efficiency is lowered, which is not preferable. The shape of the support rod is not particularly limited, such as a cylindrical shape, a triangular prism, or a quadrangular prism. There is no restriction | limiting in particular as a method of fixing a support rod to a support body. Brazing with active metal, glassing, screwing, etc. can be raised. Among these, screwing is particularly preferable. By screwing, it becomes easy to attach and detach, and further, since heat treatment is not performed at the time of fixing, deformation of the support and the support rod due to heat treatment can be suppressed.

  Further, it is preferable that a metal layer for shielding (shielding) electromagnetic waves is also formed between the heating body for heating the chuck top and the chuck top. The electromagnetic shield electrode layer has a role of blocking noise that affects the probing of the wafer, such as electromagnetic waves and electric fields generated by a heating body. Although this noise does not have a great influence on the measurement of normal electrical characteristics, it particularly affects the measurement of the high frequency characteristics of the wafer. In this electromagnetic shield electrode layer, for example, a metal foil can be inserted between the heating body and the chuck top, and the chuck top and the heating body need to be insulated. In this case, the metal foil to be used is not particularly limited, but since the heating body has a temperature of about 200 ° C., a foil of stainless steel, nickel, aluminum, or the like is preferable.

  When the chuck top is an insulator, the role of the insulating layer between the chuck top and the electromagnetic shield electrode layer is between the chuck top conductor layer formed on the wafer mounting surface of the chuck top or the chuck top. In the case of a conductor, a capacitor on an electric circuit is formed between the chuck top itself and the electromagnetic shield layer, and this capacitor component may affect as a noise when probing the wafer. For this reason, in order to reduce these influences, the noise can be reduced by forming an insulating layer between the electromagnetic shield electrode layer and the chuck top.

  Furthermore, it is preferable to provide a guard electrode layer through an insulating layer between the chuck top and the electromagnetic shield electrode layer. The guard electrode layer can be further connected to a metal layer formed on the support to further reduce noise that affects the high frequency characteristics of the wafer. That is, in the present invention, the influence of noise at the time of measuring wafer characteristics at high frequencies can be reduced by covering the entire support including the heating element with a conductor.

At this time, the resistance value of the insulating layer between the heating body and the electromagnetic shield electrode layer, between the electromagnetic shield electrode layer and the guard electrode layer, and between the guard electrode layer and the chuck top may be 10 ⁷ Ω or more. preferable. When the resistance value is less than 10 ⁷ Ω, a minute current flows toward the chuck top conductor layer due to the influence from the heating element, which becomes a noise during probing, which is not preferable. It is preferable to set the resistance value of the insulating layer to 10 ⁷ Ω or more because the minute current can be reduced to an extent that does not affect the probing. In particular, since the circuit pattern formed on the wafer has been miniaturized recently, it is necessary to reduce the noise as described above as much as possible, and by further increasing the resistance value of the insulating layer to 10 ¹⁰ Ω or more, A highly reliable structure can be obtained.

  The dielectric constant of the insulating layer is preferably 10 or less. If the dielectric constant of the insulating layer exceeds 10, electric charges are likely to be stored in the electromagnetic shield electrode layer, the guard electrode layer, and the chuck top that sandwich the insulating layer, which causes noise generation, which is not preferable. Particularly recently, since the miniaturization of the wafer circuit has progressed as described above, it is necessary to reduce noise, and the dielectric constant is particularly preferably 4 or less, and further preferably 2 or less. Reducing the dielectric constant is preferable because the thickness of the insulating layer necessary for securing the insulation resistance value and the capacitance can be reduced, and the thermal resistance due to the insulating layer can be reduced.

  Furthermore, when the chuck top is an insulator, between the chuck top conductor layer and the guard electrode layer, and between the chuck top conductor layer and the electromagnetic shield electrode layer, and when the chuck top is a conductor, the chuck top itself The capacitance between the guard electrode layer and between the chuck top and the electromagnetic shield electrode layer is preferably 5000 pF or less. When the capacitance exceeds 5000 pF, the influence of the insulating layer as a capacitor is increased, which may be affected as noise during probing, which is not preferable. In particular, with the miniaturization of the wafer circuit as described above, it is particularly preferable that the electrostatic capacity is 1000 pF or less because good probing can be realized.

  As described above, noise that affects probing can be significantly reduced by controlling the resistance value, dielectric constant, and capacitance of the insulating layer within the above ranges. The thickness of the insulating layer at this time is preferably 0.2 mm or more. Originally, in order to reduce the size of the device and to maintain good heat conduction from the heating body to the chuck top, it is better that the thickness of the insulating layer is thin, but if the thickness is less than 0.2 mm, Since the problem of durability occurs, it is not preferable. The ideal thickness of the insulating layer is 1 mm or more. A thickness of this level is preferable because there is no problem of durability and heat conduction from the heating body is good. Although there is no restriction | limiting in particular regarding the upper limit of thickness, It is preferable that it is 10 mm or less. If it has a thickness greater than this, noise is highly effective in blocking, but it takes time until the heat generated in the heating element is conducted to the chuck top and wafer, making it difficult to control the heating temperature. Therefore, it is not preferable. The preferred thickness is preferably 5 mm or less, although it depends on the probing conditions, because the temperature can be controlled relatively easily.

  Further, the thermal conductivity of the insulating layer is not particularly limited, but it is particularly preferably 0.5 W / mK or more in order to realize good thermal conduction from the heating body as described above. Moreover, if it is 1 W / mK or more, since heat transfer becomes further favorable, it is preferable.

  A specific material for the insulating layer is not particularly limited as long as it satisfies the above characteristics and has heat resistance sufficient to withstand the probing temperature, and ceramics and resins can be raised. Among these, as the resin, for example, a silicon resin, a resin in which a filler is dispersed in the resin, or a ceramic such as alumina can be preferably used. The role of the filler dispersed in the resin is to increase the thermal conductivity of the silicon resin, and the material is not particularly limited as long as there is no reactivity with the resin. For example, boron nitride, aluminum nitride, alumina, silica, etc. The substance can be raised.

  Moreover, it is preferable that the formation region of the insulating layer is equal to or more than the formation region of the electromagnetic shield electrode layer, the guard electrode layer, and the heating body. When the formation region is small, noise may enter from a portion not covered with the insulating layer, which is not preferable.

An example will be described below. For example, a silicon resin in which boron nitride is dispersed is used as the insulating layer. The dielectric constant of this material is 2. When sandwiching a boron nitride-dispersed silicon resin as an insulating layer between the electromagnetic shield electrode layer and the guard electrode layer and between the guard electrode layer and the chuck top, if the chuck top is compatible with a 12-inch wafer, for example, the diameter is 300 mm. Can be formed. At this time, if the thickness of the insulating layer is 0.25 mm, the capacitance can be set to 5000 pF. Furthermore, if the thickness is 1.25 mm or more, the capacitance can be 1000 pF. Since the volume resistivity of this material is 9 × 10 ¹⁵ Ω · cm, the resistance can be reduced to about 1 × 10 ¹² Ω when the diameter is 300 mm and the thickness is 0.8 mm or more. . In addition, since this material has a thermal conductivity of about 5 W / mK, the thickness can be selected depending on the probing conditions. However, if the thickness is 1.25 mm or more, both the capacitance and the resistance are sufficient. can do.

  Although an enlarged cross-sectional view is shown in FIG. 7, it is preferable that the cylindrical portion 41 of the support body 4 is formed with a through hole 42 for inserting an electrode for supplying power to the heating body and an electromagnetic shield electrode. In this case, the position where the through hole is formed is particularly preferably near the center of the cylindrical portion of the support. When the formed through hole is close to the outer periphery, the strength of the support supported by the circumferential portion of the support decreases due to the influence of the pressure of the probe card, and the support deforms in the vicinity of the through hole, which is not preferable. In the drawings other than FIG. 7, electrodes and through holes are omitted.

  If the warping of the chuck top is 30 μm or more, the probe needle at the time of probing will cause contact with one piece, and the characteristics cannot be evaluated, or the defect is judged erroneously due to poor contact, and the yield is evaluated worse than necessary. It is not preferable. Further, even if the parallelism between the surface of the chuck top conductor layer and the bottom rear surface of the support is 30 μm or more, contact failure is similarly caused, which is not preferable. Even when the warp and parallelism of the chuck top are good at 30 μm or less at room temperature, if the warp and parallelism are 30 μm or more when probing at 200 ° C., it is not preferable as described above. The same applies when probing at -70 ° C. That is, it is preferable that both the warp and the parallelism are 30 μm or less over the entire temperature range for probing.

  A chuck top conductor layer is formed on the wafer mounting surface of the chuck top. The purpose of forming the chuck top conductor layer is to protect the chuck top from corrosive gases, acids, alkali chemicals, organic solvents, water, etc., which are usually used in semiconductor manufacturing, and with the wafer placed on the chuck top. In order to cut off electromagnetic noise from below the chuck top, there is a role to drop to the ground.

  The method for forming the chuck top conductor layer is not particularly limited, and examples thereof include a technique of applying a conductor paste by screen printing and baking, or a technique such as vapor deposition or sputtering, or a technique such as spraying or plating. Of these, thermal spraying and plating are particularly preferable. In these methods, since the heat treatment is not involved in forming the conductor layer, the chuck top itself does not warp due to the heat treatment, and the cost is relatively low, so that the inexpensive conductor having excellent characteristics. A layer can be formed. In particular, it is particularly preferable to form a sprayed film on the chuck top and form a plating film thereon. This is because the thermal sprayed film has better adhesion to ceramics or metal-ceramics than the plated film. This is because the material to be sprayed, such as aluminum or nickel, forms some oxide, nitride or oxynitride during spraying. The formed compound reacts with the surface layer of the chuck top and can be firmly adhered.

  However, since the sprayed film contains these compounds, the conductivity of the film is lowered. On the other hand, since plating can form a substantially pure metal, the adhesion strength with the chuck top is not as high as that of the sprayed film, but a conductor layer having excellent conductivity can be formed. Therefore, when a sprayed film is formed on the base and a plated film is formed thereon, the plated film has good adhesion strength with respect to the sprayed film because the sprayed film is a metal, and further has a good electrical property. Since conductivity can also be provided, it is particularly preferable.

  Further, the surface thickness of the conductor layer on the chuck top is preferably 0.1 μm or less in terms of Ra. If the surface roughness exceeds 0.1 μm, when measuring a device with a large calorific value, the heat generated by the device itself during probing cannot be dissipated from the chuck top, and the device itself is heated. Thermal destruction may occur. The surface roughness Ra is preferably 0.02 μm or less because heat can be radiated more efficiently.

  When the heating element of the chuck top is heated and probing at 200 ° C., for example, the temperature of the lower surface of the support is preferably 100 ° C. or less. If the temperature exceeds 100 ° C, the prober drive system at the bottom of the support will be distorted due to the difference in thermal expansion coefficient, and its accuracy will be impaired. As a result, the device cannot be evaluated accurately. In addition, when measuring room temperature after measuring temperature rise at 200 ° C., it takes time to cool from 200 ° C. to room temperature, resulting in poor throughput.

  The Young's modulus of the chuck top is preferably 250 GPa or more. If the Young's modulus is less than 250 GPa, the chuck top bends due to the load applied to the chuck top during probing, and the flatness and parallelism of the chuck top upper surface are significantly deteriorated. For this reason, contact failure of the probe pin occurs, so that an accurate inspection cannot be performed, and further, the wafer may be damaged. For this reason, the Young's modulus of the chuck top is preferably 250 GPa or more, and more preferably 300 GPa or more.

  The thermal conductivity of the chuck top is preferably 15 W / mK or more. When it is less than 15 W / mK, the temperature distribution of the wafer placed on the chuck top is deteriorated, which is not preferable. For this reason, if the thermal conductivity is 15 W / mK or more, it is possible to obtain heat uniformity so as not to hinder probing. An example of such a material having thermal conductivity is alumina having a purity of 99.5% (thermal conductivity 30 W / mK). Particularly preferred is 170 W / mK or more. Examples of the material having such thermal conductivity include aluminum nitride (170 W / mK), Si—SiC composite (170 W / mK to 220 W / mK), and the like. With this level of thermal conductivity, it is possible to obtain a chuck top that is extremely excellent in heat uniformity.

  The thickness of the chuck top is preferably 8 mm or more. If the thickness is less than 8 mm, the chuck top will bend due to the load applied to the chuck top during probing, and the flatness and parallelism of the upper surface of the chuck top will be significantly deteriorated. Furthermore, the wafer may be damaged. For this reason, the thickness of the chuck top is preferably 8 mm or more, and more preferably 10 mm or more.

  The material forming the chuck top is preferably a metal-ceramic composite, ceramic, or metal. As a metal-ceramic composite, either a composite of aluminum and silicon carbide, or a composite of silicon and silicon carbide, which has a relatively high thermal conductivity and is easy to obtain soaking when the wafer is heated, is used. It is preferable that Among these, a composite of silicon and silicon carbide is particularly preferable because it has a particularly high Young's modulus and a high thermal conductivity.

  In addition, since these composite materials have electrical conductivity, a heating element is formed by, for example, forming an insulating layer on the surface opposite to the wafer mounting surface by a technique such as spraying or screen printing, and on the surface. The conductor layer can be formed into a predetermined pattern by screen printing or vapor deposition or the like to form a heating element.

  Further, a metal foil such as stainless steel, nickel, silver, molybdenum, tungsten, chromium, and alloys thereof can be formed into a heating element by forming a predetermined heating element pattern by etching. In this method, the insulation from the chuck top can be formed by the same method as described above. For example, an insulating sheet can be inserted between the chuck top and the heating element. This is preferable because the insulating layer can be easily formed at a lower cost than the above method. Examples of the resin that can be used in this case include mica sheet, epoxy resin, polyimide resin, phenol resin, and silicon resin from the viewpoint of heat resistance. Of these, mica is particularly preferable. The reason for this is that it is excellent in heat resistance and electrical insulation, is easy to process, and is inexpensive.

  Further, ceramics as the material of the chuck top is relatively easy to use because there is no need to form an insulating layer as described above. In this case, a method similar to the above can be selected as a method for forming the heating element. Among the ceramic materials, alumina, aluminum nitride, silicon nitride, mullite, and a composite of alumina and mullite are particularly preferable. Since these materials have a relatively high Young's modulus, they are particularly preferable because deformation due to pressing of the probe card is small. Among these, alumina is the most excellent because it is relatively inexpensive and has excellent electrical characteristics at high temperatures. In particular, alumina having a purity of 99.6% or higher has high insulation properties at high temperatures. Further, those having a purity of 99.9% or more are particularly preferable. In other words, alumina generally adds oxides such as silicon and alkaline earth metals to lower the sintering temperature when the substrate is sintered. This is the electrical insulation of pure alumina at high temperatures. Therefore, the purity is preferably 99.6% or more, and more preferably 99.9% or more.

  It is also possible to apply metal as the material of the chuck top. In this case, it is also possible to use tungsten, molybdenum and alloys thereof having a particularly high Young's modulus. Specific examples of the alloy include an alloy of tungsten and copper and an alloy of molybdenum and copper. These alloys can be produced by impregnating copper into tungsten or molybdenum. Since these metals are also conductors like the ceramic-metal composites described above, the above method is applied as they are to form a chuck top conductor layer and a heating element to form a chuck. Can be used as a top.

  When a load of 3.1 MPa is applied to the chuck top, the amount of deflection is preferably 30 μm or less. A number of pins for inspecting the wafer from the probe card press the wafer against the chuck top, so that the pressure also affects the chuck top, and the chuck top is bent at least. If the amount of bending exceeds 30 μm at this time, the pins of the probe card cannot be uniformly pressed against the wafer, so that the wafer cannot be inspected, which is not preferable. The amount of deflection when this pressure is applied is more preferably 10 μm or less.

  In the present invention, as shown in FIG. 8, a cooling module 8 can be provided in the cylindrical portion of the support 4. The cooling module can quickly cool the chuck top by removing the heat when the chuck top needs to be cooled. Further, when the chuck top is heated, the temperature can be increased efficiently by separating the cooling module from the chuck top. As a method for making the cooling module movable, elevating means 9 such as an air cylinder is used. This is preferable because the cooling rate of the chuck top can be greatly improved and the throughput can be increased. Also, this method is preferable because the cooling module is not subjected to any probe card pressure during probing, so that it is not deformed by the pressure of the cooling module, and further has a higher cooling capacity than air cooling.

  When priority is given to the cooling speed of the chuck top, the cooling module may be fixed to the chuck top. As a fixed form, as shown in FIG. 9, a heating element 6 having a structure in which a resistance heating element is sandwiched between insulators is installed on the opposite side of the wafer mounting surface of the chuck top 2, and a cooling module 8 is provided on the lower surface thereof. Can be fixed. As another embodiment, as shown in FIG. 10, a cooling module 8 is directly installed on the opposite side of the wafer mounting surface of the chuck top 2, and a resistance heating element is sandwiched between insulators on the lower surface thereof. There is a method of fixing the heating body 6. At this time, a soft material having deformability and heat resistance and high thermal conductivity can be inserted between the opposite side of the wafer mounting surface of the chuck top 2 and the cooling module 8. By providing a soft material that can relieve the flatness and warpage between the chuck top and the cooling module, the contact area can be increased, and the cooling capacity of the cooling module that is originally provided can be further demonstrated. The cooling rate can be increased.

  There is no particular limitation on the fixing method in any of the methods, but the fixing can be performed by a mechanical method such as screwing or clamping. In addition, when fixing the chuck top, cooling module, and insulated heater with screws, the number of screws is set to 3 or more, and further to 6 or more, the adhesiveness between them increases, and the cooling capacity of the chuck top further improves. Therefore, it is preferable.

  In the case of this structure, the cooling module may be mounted in the gap of the support, or the cooling module may be mounted on the support and the chuck top may be mounted thereon. . In any method, since the chuck top and the cooling module are fixed, the cooling rate can be increased as compared with the movable type. In addition, since the cooling module unit is mounted on the support body, the contact area of the cooling module with the chuck top increases, and the chuck top can be cooled more quickly.

  Thus, when fixing a cooling module with respect to a chuck | zipper top, it is also possible to heat up, without flowing a refrigerant | coolant to a cooling module. In this case, since the refrigerant does not flow into the cooling module, the heat generated in the heating element is lost to the refrigerant and does not escape to the outside of the system, so that the temperature can be increased more efficiently. However, even in this case, the chuck top can be efficiently cooled by flowing the coolant through the cooling module during cooling.

  Further, the chuck top and the cooling module can be integrated. In this case, the material of the chuck top and the cooling module used for the integration is not particularly limited, but it is necessary to form a flow path for flowing the coolant in the cooling module. The difference in coefficient of thermal expansion from the cooling module is preferably small, and of course, the same material is preferable.

  In this case, as the material to be used, ceramics described as the material of the chuck top or a composite of ceramics and metal can be used. In this case, a chuck top conductor layer is formed on the wafer mounting surface side, a flow path for cooling is formed on the opposite surface side, and a substrate made of the same material as the chuck top is formed, for example, A wafer holder can be manufactured by integrating by a technique such as brazing or glassing. As a matter of course, the flow path may be formed on the side of the substrate to be attached, or the flow path may be formed on both substrates. It is also possible to integrate by screwing.

  In this way, by integrating the chuck top and the cooling module, the chuck top can be cooled more quickly than when the cooling module is fixed to the chuck top as described above.

  In this method, a metal can also be used as the material of the integrated chuck top. Metals are easier to process and less expensive than the ceramics or ceramic / metal composites, and therefore, it is easy to form a refrigerant flow path. However, when metal is used as an integrated chuck top, bending may occur due to pressure applied during probing. For this reason, as shown in FIG. 11, bending can be prevented by installing the chuck top deformation preventing substrate 10 on the opposite side of the wafer mounting surface of the integrated chuck top 2.

  A substrate having a Young's modulus of 250 GPa or more is preferably used as the chuck top deformation preventing substrate. Further, as shown in FIG. 12, the chuck top deformation preventing substrate may be accommodated in a gap formed in the support body, or the chuck top deformation preventing substrate and the support body integrated with each other. You may make it insert between. Further, the chuck top integrated with the chuck top deformation preventing substrate may be fixed by a mechanical method such as screwing as described above, or by a method such as brazing or glassing. You may do it. Further, as in the case where the cooling module is fixed to the chuck top, when the chuck top is heated or kept at a high temperature, it is preferable because the coolant can be raised and lowered more efficiently by flowing the coolant without cooling. .

  Further, in the present embodiment in which the chuck top material is metal, for example, when the surface is likely to be oxidized or deteriorated as the chuck top material, or the electrical conductivity is not high, the wafer mounting surface A chuck top conductor layer can be formed anew on the surface. Regarding this method, as described above, it is formed by plating with oxidation resistance such as nickel, forming a chuck top conductor layer by combination with thermal spraying, and polishing the surface of the wafer mounting surface can do.

  Also in this structure, the electromagnetic shield layer and the guard electrode layer described above can be formed as necessary. In this case, the insulated heating element is covered with metal as described above, a guard electrode layer is formed via an insulating layer, and an insulating layer is formed between the guard electrode layer and the chuck top. Furthermore, the chuck top deformation prevention substrate may be integrally fixed to the chuck top.

  In this structure, as an installation method for the support of the chuck top integrated with the cooling module, the cooling module may be installed in a gap formed in the support, or the chuck top and the cooling module Similarly to the case where the screw is screwed, the cooling module unit may be installed on the support.

  Although there is no restriction | limiting in particular as a material of a cooling module, Since aluminum, copper, and its alloy have comparatively high thermal conductivity, they can take away the heat | fever of a chuck | zipper top rapidly, and are used preferably. Further, stainless steel, magnesium alloy, nickel, and other metal materials can be used. In order to impart oxidation resistance to the cooling module, a metal film having oxidation resistance such as nickel, gold, or silver can be formed using a technique such as plating or thermal spraying.

  Ceramics can also be used as the material for the cooling module. The material in this case is not particularly limited, but aluminum nitride and silicon carbide are preferable because heat conductivity is relatively high and heat can be quickly taken from the chuck top. Silicon nitride and aluminum oxynitride are preferable because of high mechanical strength and excellent durability. Oxide ceramics such as alumina, cordierite, and steatite are preferable because they are relatively inexpensive. As described above, since the material of the cooling module can be variously selected, the material may be selected depending on the application. Among these, aluminum plated with nickel and copper plated with nickel are particularly preferable because they have excellent oxidation resistance, high thermal conductivity, and are relatively inexpensive. .

  It is also possible to flow a coolant through the cooling module. By doing in this way, since the heat transmitted from the heating body to the cooling module can be quickly removed from the cooling module, the cooling rate of the heating body can be further improved, which is preferable.

  As a preferred example, two aluminum plates are prepared, and a flow path for flowing water through one of the aluminum plates is formed by machining or the like. Nickel plating is applied to the front surface in order to improve corrosion resistance and oxidation resistance. Then, another aluminum plate with nickel plating is attached. At this time, an O-ring or the like is inserted around the flow path so that water does not leak, and two aluminum plates are bonded together by screwing or welding.

  Alternatively, two copper (oxygen-free copper) plates are prepared, and a flow path for flowing water to one of the copper plates is formed by machining or the like. The other copper plate and the stainless steel pipe at the inlet / outlet of the refrigerant are brazed and joined simultaneously. In order to improve the corrosion resistance and oxidation resistance of the joined cooling plate, nickel plating is applied to the entire surface. Moreover, as another form, it can be set as a cooling module by attaching the pipe which flows a refrigerant | coolant to cooling plates, such as an aluminum plate or a copper plate. In this case, the cooling efficiency can be further increased by forming a counterbore groove having a shape close to the cross-sectional shape of the pipe on the cooling plate and closely contacting the pipe. Moreover, in order to improve the adhesiveness of a cooling pipe and a cooling plate, you may insert thermally conductive resin, ceramics, etc. as an intervening layer.

  Moreover, as another form, the pipe which can flow a refrigerant | coolant can be fixed to aluminum or copper, and it can also be set as a cooling module. In this case, in order to secure the contact area between the pipe and aluminum or copper, the metal plate such as aluminum or copper is subjected to groove processing substantially the same as the cross-sectional shape of the cooling pipe, or resin or the like is provided between the metal plate and pipe. A substance having the deformability may be sandwiched. Conversely, a planar shape may be formed in a part of the cross-sectional shape of the pipe, and this may be fixed to the metal plate. The metal plate and the pipe may be fixed by screwing using a metal band or the like, or of course, welding or brazing.

  Moreover, as a refrigerant | coolant which flows in these cooling modules, liquids, such as Florinart, Galden, and water, or gases, such as nitrogen, air | atmosphere, and helium, may be sufficient, for example. There is no restriction | limiting in particular about the refrigerant | coolant sent at this time, What is necessary is just to use properly by a use.

  The wafer holder for a wafer prober of the present invention can be suitably used for heating and inspecting a workpiece such as a wafer. For example, if it is applied to a wafer prober, a handler device or a tester device, the characteristics of high rigidity and high thermal conductivity can be particularly utilized, which is preferable.

  An alumina substrate having a purity of 99.5% and a diameter of 305 mm and a thickness shown in Table 1 was prepared. Concentric grooves and through holes for vacuum chucking the wafer were formed on the wafer mounting surface of the alumina substrate, and nickel plating was applied to the wafer mounting surface to form a chuck top conductor layer. Thereafter, the chuck top conductor layer was polished, the total warpage amount was 10 μm, the surface roughness was finished to 0.02 μm with Ra, and the chuck top was obtained.

  Next, a cylindrical mullite-alumina composite having a diameter of 305 mm and a thickness of 40 mm was prepared as a support. This support was subjected to spot facing with an inner diameter of 285 mm and a depth of 20 mm. In addition, a stainless steel foil insulated with mica was attached to each chuck top as an electromagnetic shield electrode layer, and a heating element sandwiched between mica was attached. As the heating element, stainless steel foil was etched in a predetermined pattern. Further, a through hole for connecting an electrode for supplying power to the heating element was formed in the support. Next, a metal layer was formed on the side and bottom surfaces of the support by thermal spraying of aluminum.

  Next, a chuck top on which a heating element and an electromagnetic shield electrode layer were mounted was mounted on the support to obtain a wafer holder for a wafer prober.

  By energizing the heating element of the wafer prober wafer holder, the wafer was heated to 150 ° C. and probing was performed continuously. The results are shown in Table 1. When the ratio of diameter to thickness was 5 or more and 100 or less, there was no problem even when probing was performed continuously for 10 hours, but when the ratio was less than 5, the probe top warped after 2 hours. Can no longer be probed. Moreover, when the ratio of diameter to thickness exceeded 100, the heat uniformity of the wafer mounting surface of the chuck top was poor, and accurate measurement could not be performed.

  Further, a load (100 kg) was applied to a position of 275 mm in diameter of the chuck top of the wafer holder for the wafer prober with a load sensor having a diameter of 20 mm, and the amount of deflection was measured. The results are shown in Table 1.

  As can be seen from Table 1, when the ratio of diameter to thickness exceeds 100, the amount of deflection increases, and accurate measurement cannot be performed.

  No. 1 of Example 1 except that the metal layer of the support was not thermally sprayed but a stainless steel metal foil was screwed. When the probing was performed by heating to 150 ° C. in the same manner as in Example 1 with the same wafer holder for wafer prober as in No. 5, no problem occurred even if probing was continued for 10 hours.

  For comparison, the metal layer of the support was removed and probing was performed. Under the conditions of Example 1, no problem occurred even when probing was performed continuously for 10 hours. In response, I was unable to probe properly. Further, when the electromagnetic shield electrode layer was removed and probing was performed, the characteristics of the wafer could not be measured due to the influence of noise estimated to be generated from the heating element.

  A Si—SiC substrate having a diameter of 305 mm or a diameter of 205 mm and a thickness shown in Table 2 was prepared. Concentric grooves and through holes for vacuum chucking the wafer were formed on the wafer mounting surface of the Si-SiC substrate, and nickel plating was applied to the wafer mounting surface to form a chuck top conductor layer. Thereafter, the chuck top conductor layer was polished, the total warpage amount was 10 μm, the surface roughness was finished to 0.02 μm with Ra, and the chuck top was obtained.

  Next, a cylindrical mullite-alumina composite having a diameter of 305 mm, a diameter of 205 mm, and a thickness of 40 mm was prepared as a support. This support was subjected to spot facing with an inner diameter of 285 mm and 185 mm and a depth of 20 mm. In addition, a stainless steel foil insulated with mica was attached to each chuck top as an electromagnetic shield electrode layer, and a heating element sandwiched between mica was attached. As the heating element, stainless steel foil was etched in a predetermined pattern. Further, a through hole for connecting an electrode for supplying power to the heating element was formed in the support. Next, a metal layer was formed on the side and bottom surfaces of the support by thermal spraying of aluminum.

  Next, a chuck top on which a heating element and an electromagnetic shield electrode layer were mounted was mounted on the support to obtain a wafer holder for a wafer prober.

  By energizing the heating element of the wafer prober wafer holder, the wafer was heated to 150 ° C. and probing was performed continuously. The results are shown in Table 2. When the ratio of diameter to thickness was 5 or more and 100 or less, there was no problem even when probing was performed continuously for 10 hours, but when the ratio was less than 5, the probe top warped after 2 hours. Can no longer be probed. Moreover, when the ratio of diameter to thickness exceeded 100, the heat uniformity of the wafer mounting surface of the chuck top was poor, and accurate measurement could not be performed.

  Further, a load (100 kg) was applied to the position of the chuck top of the wafer prober for wafer prober having a diameter of 275 mm or a diameter of 175 mm with a load sensor having a diameter of 20 mm, and the amount of deflection was measured. The results are shown in Table 2.

  As can be seen from Table 1, when the ratio of diameter to thickness exceeds 100, the amount of deflection increases, and accurate measurement cannot be performed.

  No. of Example 3 except that the metal layer of the support was not thermally sprayed but a stainless steel metal foil was screwed. The wafer holder for wafer probers similar to 9 was heated at 150 ° C. for probing in the same manner as in Example 3. When probing was continued for 10 hours, no problem occurred.

  For comparison, the metal layer of the support was removed and probing was performed. Under the conditions of Example 3, no problem occurred even when probing was performed continuously for 10 hours. In response, there were cases where probing was not successful. Further, when the electromagnetic shield electrode layer was removed and probing was performed, the characteristics of the wafer could not be measured due to the influence of noise estimated to be generated from the heating element.

  According to the present invention, a wafer holder and a heater unit used in a wafer prober for mounting a semiconductor wafer on a wafer mounting surface and inspecting the electrical characteristics of the wafer by pressing a probe card against the wafer, As a result, it is possible to reduce the deflection of the chuck top, and to provide a wafer holder for a wafer prober that enables accurate measurement without damaging the wafer.

An example of the cross-sectional structure of the wafer holder for wafer probers of this invention is shown. An example of the cross-sectional structure of the heating body of this invention is shown. An example of the heat insulation structure of this invention is shown. The other example of the heat insulation structure of this invention is shown. The other example of the heat insulation structure of this invention is shown. The other example of the cross-section of the wafer holder for wafer probers of this invention is shown. An example of the cross-sectional structure of the electrode part of the wafer holder for wafer probers of this invention is shown. The other example of the cross-section of the wafer holder for wafer probers of this invention is shown. The other example of the cross-section of the wafer holder for wafer probers of this invention is shown. The other example of the cross-section of the wafer holder for wafer probers of this invention is shown. The other example of the cross-section of the wafer holder for wafer probers of this invention is shown. The other example of the cross-section of the wafer holder for wafer probers of this invention is shown.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wafer holder for wafer probers 2 Chuck top 3 Chuck top conductor layer 4 Support body 5 Gap 6 Heating body 7 Support rod 8 Cooling module 9 Lifting means 10 Chuck top deformation prevention substrate 21 Annular groove 22 Radial groove 23 Cylinder 41 Support body Cylindrical portion 42 Through hole 61 Resistance heating element 62 Insulator

Claims (9)

  A wafer holder for a wafer prober for inspecting a semiconductor, wherein the holder comprises at least a chuck top and a support for supporting the chuck top, and a ratio (diameter of the maximum diameter and the maximum thickness of the chuck top). / Thickness) is 5 or more and 100 or less, a wafer holder for a wafer prober.   The wafer holder for a wafer prober according to claim 1, wherein the ratio of the maximum diameter to the maximum thickness is 10 or more and 50 or less.   The wafer holder for a wafer prober according to claim 1 or 2, wherein the chuck top is made of a composite of metal and ceramics.   The wafer holder for a wafer prober according to claim 3, wherein the chuck top is made of a composite of aluminum and silicon carbide or a composite of silicon and silicon carbide.   3. The wafer holder for a wafer prober according to claim 1, wherein the chuck top is made of ceramics.   6. A wafer holder for a wafer prober according to claim 1, wherein the material of the support is ceramics or a composite of two or more ceramics.   The wafer holder for a wafer prober according to claim 6, wherein the material of the support is any one of alumina, silicon nitride, mullite, and a composite of alumina and mullite.   A heater unit for a wafer prober comprising the wafer holder for a wafer prober according to any one of claims 1 to 7. A wafer prober comprising the heater unit according to claim 8.

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