JP2007033894A - Optical modulator - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical modulator having a large extinction ratio and having small drive voltage and small DC bias voltage. <P>SOLUTION: The optical modulator comprises a substrate 1 having at least one face azimuth of an x-cut and a y-cut by possessing electro-optical effect, a light guide 5 for guiding light formed on the substrate 1, and a Mach-Zehnder light guide formed on one face side of the substrate 1, having an interaction part provided with a traveling wave electrode 6 comprising a center conductor and a contact conductor for a high frequency electric signal for applying the high-frequency electric signal for modulating light and including at least two interaction light guides 5a and 5b for modulating an optical phase by allowing the light guide 5 to apply the high-frequency electric signal on the traveling wave electrode 6. The center conductor of the traveling wave electrode is branched in an interaction part, the branched center conductors 6a and 6b are separated at a distance where coupling of light propagating the two interaction light guides 5a and 5b respectively is non-dense. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention belongs to the field of optical modulators that are high in speed, have a high extinction ratio, and have a low driving voltage and a small DC bias voltage.

An optical waveguide and a traveling wave electrode are provided on a substrate having a so-called electro-optic effect (hereinafter, the lithium niobate substrate is abbreviated as an LN substrate) such as lithium niobate (LiNbO ₃ ) whose refractive index is changed by applying an electric field. The formed traveling wave electrode type lithium niobate optical modulator (hereinafter abbreviated as LN optical modulator) is applied to a 2.5 Gbit / s, 10 Gbit / s large capacity optical transmission system because of its excellent chirping characteristics. Yes. Recently, application to an ultra large capacity optical transmission system of 40 Gbit / s is also being studied, and it is expected as a key device.

[Conventional technology]
This LN optical modulator includes a type using a z-cut substrate and a type using an x-cut substrate (or y-cut substrate). Here, an x-cut substrate LN optical modulator using an x-cut LN substrate and a coplanar waveguide (CPW) traveling wave electrode is taken up as a prior art, and a perspective view thereof is shown in FIG. 6 is a cross-sectional view taken along the line AA ′ of FIG.

In the figure, 1 is an x-cut LN substrate, 2 is a transparent SiO ₂ buffer layer having a thickness of about 200 nm to 1 μm in the wavelength region used in optical communication such as 1.3 μm or 1.55 μm, and 3 is an x-cut LN. This is an optical waveguide formed by thermally diffusing Ti at 1050 ° C. for about 10 hours after depositing Ti on the substrate 1, and constitutes a Mach-Zehnder interference system (or Mach-Zehnder optical waveguide). Reference numerals 3a and 3b denote optical waveguides (or interactive optical waveguides) in a portion where an electrical signal and light interact (referred to as an interaction portion), that is, two arms of a Mach-Zehnder optical waveguide. The CPW traveling wave electrode 4 includes a central conductor 4a and ground conductors 4b and 4c.

In FIG. 6, W _a and W _b are the widths of the interaction optical waveguides 3a and 3b. In this prior art, the widths of the two interaction optical waveguides 3a and 3b are equal (that is, W _a = W _b , for example, W _a and W _b are both 9 μm). G _wg is a distance (also referred to as a waveguide gap) between the interactive optical waveguides 3a and 3b, and is, for example, 16 μm. Further, S _wg is the distance between the centers of the interactive optical waveguides 3a and 3b (in this example, it is 25 μm). Δ is the distance between the edge of the center conductor 4a and the center of the interaction optical waveguide 3a or 3b (in this figure, the distance between the edge of the center conductor 4a and the center of the interaction optical waveguide 3b).

  FIG. 7 shows a top view of only the optical waveguide 3. Here, let L be the length of the interaction optical waveguides 3a and 3b. Although FIG. 7 shows only the optical waveguide, A-A ′ is indicated at a position corresponding to A-A ′ in the perspective view of FIG. 5.

In this prior art, a bias voltage (usually a DC bias voltage) and a high-frequency electric signal (also referred to as RF electric signal) are superimposed and applied between the center conductor 4a and the ground conductors 4b and 4c. Not only the RF electrical signal but also the DC bias voltage changes the phase of the light. Further, the microwave effective index n _m of the interaction optical waveguides 3a of the buffer layer 2 is an electrical signal, by approximating the effective refractive index n _o of the light propagating the 3b, and important function of expanding the optical modulation band is doing.

  Next, the operation of the LN optical modulator configured as described above will be described. In order to operate this LN optical modulator, a DC bias voltage and an RF electric signal are applied between the center conductor 4a and the ground conductors 4b and 4c.

  FIG. 8 is a characteristic diagram showing an example of the voltage-light output characteristic of the LN optical modulator in a certain state, and the voltage applied to the traveling wave electrode 4 and the intensity of light output from the LN optical modulator. Represents the relationship. Here, Vb is a DC bias voltage during operation. As shown in FIG. 8, the DC bias voltage Vb is normally set at the midpoint between the peak and bottom of the light output characteristic.

FIG. 9 shows the product of the half-wave voltage Vπ and the length L of the interactive optical waveguide (referred to as Vπ · L, which is a measure for considering the driving voltage), the edge of the center conductor 4a, and the interactive optical waveguide. The relationship with the distance Δ from the center of 3b is shown. In this calculation, the value of Δ is determined by changing the gap _Gwg between the optical waveguides 3a and 3b. From FIG. 9, it can be seen that the distance Δ between the edge of the center conductor 4a and the center of the interaction optical waveguide 3b should be small to some extent, and there is an optimum value.

Therefore, when the distance Δ between the edge of the center conductor 4a and the center of the interaction optical waveguide 3b (and 3a) is decreased in order to reduce the drive voltage, the gap _Gwg between the interaction optical waveguides 3a and 3b is decreased. Become. However, as shown in FIG. 10, when the gap _Gwg between the interaction optical waveguides 3a and 3b decreases, the degree of coupling between the interaction optical waveguides 3a and 3b increases remarkably, and the power when the light is turned on / off is increased. That is, there is a problem that the extinction ratio is deteriorated.

  As described above, when the two interactive optical waveguides are brought close to the central conductor as in the prior art in order to lower the drive voltage, the two interactive optical waveguides approach each other. For this reason, there is a problem that light is combined, resulting in deterioration of the extinction ratio.

  In order to solve the above-mentioned problem, an optical modulator according to claim 1 of the present invention is formed on a substrate having an electro-optic effect and having at least one surface orientation of x-cut or y-cut, and the substrate. Progression comprising an optical waveguide for guiding light and a central conductor and a ground conductor for high-frequency electrical signals formed on one surface side of the substrate for applying a high-frequency electrical signal for modulating the light A Mach-Zehnder including an interaction portion having a wave electrode, wherein the optical waveguide includes at least two interaction optical waveguides for modulating the phase of the light by applying the high-frequency electrical signal to the traveling wave electrode In the optical modulator provided with the optical waveguide, a central conductor of the traveling wave electrode is branched at the interaction portion, and the branched central conductors respectively pass the two interactive optical waveguides. Wherein the coupling of said light propagating are spaced a distance which becomes sparse.

  According to a second aspect of the present invention, there is provided the optical modulator according to the first aspect, wherein a gap between the two interactive optical waveguides is 18 μm or more.

  An optical modulator according to a third aspect of the present invention is the optical modulator according to the first or second aspect, wherein the branched central conductor is integrated before and after the interaction portion. .

  According to the first and second aspects of the present invention, in the interaction region where the RF electric signal propagating through the traveling wave electrode and the light propagating through the Mach-Zehnder optical waveguide interact with each other, the central conductor is divided into two and spaced apart. Yes. Therefore, the two interaction optical waveguides in the interaction region can also be spaced apart, so that the two interaction optical waveguides can be prevented from forming a directional coupler. As a result, it is possible to suppress deterioration of characteristics including an extinction ratio as an optical modulator caused by the two interactive optical waveguides constituting a directional coupler. Further, since each of the interaction optical waveguides can be disposed near the center conductor divided into two, there is an advantage that the driving voltage as the optical modulator can be reduced.

  In the invention according to claim 3, since the central conductor divided into two is integrated before and after in the longitudinal direction of the interaction region, the RF electrical signal interacting with the light in the interaction portion is processed by the electrical termination, or the connector It is easy to output to the outside.

  Hereinafter, embodiments of the present invention will be described. Since the same reference numerals as those in the prior art shown in FIG. 5 correspond to the same function units, the description of the function units having the same numbers is omitted here.

[First Embodiment]
FIG. 1 shows a top view of a first embodiment of the present invention. A cross-sectional view at BB ′ is shown in FIG. The manufacturing procedure of the optical modulator according to the present invention is the same as that of the prior art shown in FIG.

  In the figure, reference numeral 5 denotes a Mach-Zehnder optical waveguide, and reference numerals 5a and 5b denote two interactive optical waveguides that constitute the arms of the Mach-Zehnder optical waveguide. 6a and 6b are center conductors, and 6c, 6d and 6e are ground conductors. Reference numerals 7a, 7b, 7c and 7d denote electric lines of force of the electric signal.

  The operation principle of this embodiment will be described. First, light incident on the Mach-Zehnder optical waveguide 5 is branched into two interactive optical waveguides 5a and 5b. On the other hand, the center conductor 6 is also bifurcated into 6a and 6b. The electric lines of force of the electric signal are distributed as shown in FIG. 2, and a push-pull operation is possible as in the conventional x-cut LN optical modulator.

Since the center conductor 6 is bifurcated into 6a and 6b, it can be separated at a sufficient distance so that the interactive optical waveguides 5a and 5b are not coupled to each other. Although the distance between the interactive optical waveguides 5a and 5b can be determined from FIG. 10, it is generally sufficient if _Gwg ′ in the figure is 18 μm or more.

  Now there is something important here. As described with reference to FIG. 9 for the prior art, the distance Δ between the edge of the center conductor 4a of the prior art and the center of the optical waveguide 3b (3a is the same) is an optimum value from the viewpoint of reducing the drive voltage. was there. However, if this optimum value is to be realized in the prior art, the interaction optical waveguides 3a and 3b operate as directional couplers, and the light guided through the respective interaction optical waveguides 3a and 3b is coupled to each other. End up. As a result, extinction ratio degradation and other characteristics as an optical modulator have been degraded.

  However, according to the present invention, the central conductor 6 can be branched from and separated from the central conductor 6 so that the optical waveguides 5a and 5b have a distance that does not operate as a directional coupler. Accordingly, the two interactive optical waveguides operate as a directional coupler, and the characteristics as the optical modulator are not deteriorated.

  In FIG. 2, the optical waveguides 5a and 5b are arranged so that the electric lines of force 7a and 7d cross the optical waveguides 5a and 5b, but may be arranged so that the electric lines of force 7b and 7c cross.

[Second Embodiment]
FIG. 3 shows a second embodiment of the present invention. In this embodiment, the grounding conductor 6d in the first embodiment is omitted, so that the traveling wave electrode is changed from a CPW type to an asymmetric coplanar strip (ACPS) type.

[Third Embodiment]
FIG. 4 shows a third embodiment of the present invention. In this embodiment, the central conductor 8 is divided into 8a and 8b, and the RF electrical signal that has finished the interaction with the light propagating through the interaction optical waveguides 5a and 5b is propagated to the integrated central conductor again. Thereafter, it may be taken out of the optical modulator from the connector or may be consumed by an electrical terminator.

  The present invention is not limited to the above-described embodiments.

[About each embodiment]
In the above description, the CPW electrode and the ACPS are used as the traveling wave electrode. However, it goes without saying that other traveling wave electrodes such as other symmetric coplanar strips (CPS) or lumped constant type electrodes may be used.

  In carrying out the present invention, the widths of some or all of the two optical waveguides in the interaction portion may be different from each other. When the widths of the two interaction optical waveguides in the interaction part are made different and the magnitude relationship is changed in the longitudinal direction of the interaction part, the length is changed by determining the replacement length in consideration of the propagation loss of the electrode. This is useful for extremely reducing the chirping of light.

  Furthermore, in the above embodiment, the substrate may have an x-cut or y-cut plane orientation, that is, a crystal x-axis or y-axis in a direction perpendicular to the substrate surface (cut surface). The plane orientation in each of the embodiments described above may be the main plane orientation, and other plane orientations may be mixed as sub-plane orientations, and not only the LN substrate but also other elements such as lithium tantalate and semiconductors. Needless to say, a substrate may be used.

  As described above, the optical modulator according to the present invention is useful as an optical modulator having a high extinction ratio at a high speed and a small driving voltage and DC bias voltage.

1 is a top view of an LN optical modulator according to a first embodiment of the present invention. Sectional drawing in the B-B 'line of the 1st Embodiment of this invention Top view of an LN optical modulator according to a second embodiment of the invention Top view of an LN optical modulator according to a third embodiment of the invention Perspective view of a conventional LN optical modulator Sectional view taken along line A-A 'of a conventional LN optical modulator Top view of prior art optical waveguide The figure explaining operation | movement of the LN optical modulator by a prior art. Diagram showing the relationship between Vπ · L and Δ The figure which shows the relationship between the coupling _| bonding degree of light and _Gwg

Explanation of symbols

1: x-cut LN substrate (substrate)
2: SiO ₂ buffer layer (buffer layer)
3, 5: Optical waveguide 3a, 3b, 5a, 5b: Interaction optical waveguide 4, 6: Traveling wave electrode 4a, 6a, 6b, 8a, 8b: Central conductor 4b, 4c, 6c, 6d, 6e, 8c, 8e : Ground conductors 7a, 7b, 7c, 7d: Electric field lines

Claims (3)

A substrate having an electro-optic effect and having at least one surface orientation of x-cut or y-cut, an optical waveguide for guiding light formed on the substrate, and formed on one surface side of the substrate And an interaction portion comprising a traveling wave electrode comprising a center conductor and a ground conductor for a high frequency electrical signal for applying a high frequency electrical signal for modulating the light, wherein the optical waveguide is the traveling wave electrode An optical modulator comprising a Mach-Zehnder optical waveguide including at least two interactive optical waveguides for modulating the phase of the light by applying the high-frequency electrical signal to
A central conductor of the traveling wave electrode is branched at the interaction portion;
The optical modulator, wherein the branched central conductors are spaced apart by a distance at which the coupling of the light propagating through the two interactive optical waveguides is sparse.   The optical modulator according to claim 1, wherein a gap between the two interactive optical waveguides is 18 μm or more.   The optical modulator according to claim 1, wherein the branched central conductor is integrated before and after the interaction portion.

Images