JP2007027774A - Semiconductor device and method for manufacturing same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device by reducing the crystalline defects and the surface roughness of a silicon germanium film epitaxially grown on a semiconductor substrate. <P>SOLUTION: A silicon germanium film 71 is epitaxially grown on a semiconductor wafer 70 and a distorted silicon film 72 is epitaxially grown on the silicon germanium film 71. The distribution of the germanium concentration in the direction of the thickness of the silicon germanium film 71 has a peak of the maximum concentration in the middle area in the direction of the thickness of the silicon germanium film 71. After that, a semiconductor device is formed on the semiconductor wafer 70 on which the silicon germanium film 71 and the distorted silicon film 72 have been formed. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device and a semiconductor device technology, and more particularly to a method for manufacturing a semiconductor device in which a silicon germanium film is formed on a semiconductor substrate and a technology effective when applied to the semiconductor device.

Japanese Patent Application Laid-Open No. 6-69131 by Ashikaga et al. (Patent Document 1) describes a consideration on a low pressure CVD method and an atmospheric pressure CVD method in forming a SiGe film and a novel SiGe film forming method in which those defects are improved. .
JP-A-6-69131

  In recent years, the speed of semiconductor devices has been increased, and as one of countermeasures, the use of a silicon germanium (SiGe) thin film has been adopted. For example, a silicon germanium film and a silicon film are sequentially epitaxially grown on a silicon substrate, and a semiconductor element such as a MOS transistor is formed on the silicon film to manufacture a semiconductor device.

  As a method for forming the silicon germanium film, it is conceivable to use a film forming method performed by MBE (molecular beam epitaxy) method or UHV-CVD (ultrahigh vacuum chemical vapor deposition) method.

  However, in these film forming methods, since the silicon germanium film is formed under a high vacuum, an advanced vacuum exhaust equipment is required for the film forming apparatus. For this reason, the film-forming apparatus becomes large and the manufacturing cost of the semiconductor device increases. Further, in the film formation under high vacuum, the film formation speed of the silicon germanium film is relatively small. For this reason, the time required for forming the silicon germanium film becomes longer, and the manufacturing time of the semiconductor device is increased.

  In addition, as a method for forming a silicon germanium film, a single wafer CVD method using a laminar flow under normal pressure may be used. In this case, the film formation speed of the silicon germanium film can be made relatively high, but since the condition that it is a single wafer type is also added, the productivity of semiconductor devices is poor in the case of thick film formation. Problem arises. Further, when this type of CVD apparatus is used, the gas introduced into the processing chamber of the film forming apparatus flows in the processing chamber as a laminar flow, and it is difficult to improve the film quality of the silicon germanium film formed on the semiconductor substrate. . For this reason, the manufacturing yield of the semiconductor device decreases.

  In addition, when the silicon germanium film epitaxially grown on the silicon substrate has many crystal defects or the surface roughness is high, the reliability of the manufactured semiconductor device may be reduced, and the manufacturing yield of the semiconductor device may be reduced.

  An object of the present invention is to provide a method of manufacturing a semiconductor device and a semiconductor device that can reduce the manufacturing time.

  Another object of the present invention is to provide a method of manufacturing a semiconductor device and a semiconductor device capable of improving the manufacturing yield.

  Another object of the present invention is to provide a semiconductor device manufacturing method and a semiconductor device that can improve reliability.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  The semiconductor device manufacturing method of the present invention forms a silicon germanium film under a pressure in a normal pressure region and a sub-normal pressure region using a batch type film forming device.

  In addition, according to the method for manufacturing a semiconductor device of the present invention, a silicon germanium film is formed by introducing a gas so that a turbulent flow is generated in a processing chamber of the film forming apparatus.

  In the semiconductor device of the present invention, the germanium concentration distribution in the thickness direction of the silicon germanium film formed on the semiconductor substrate has a peak in the intermediate region of the silicon germanium film.

  The method for manufacturing a semiconductor device of the present invention includes a step of epitaxially growing a silicon germanium film on a semiconductor substrate and a step of epitaxially growing a silicon film on the silicon germanium film, the thickness direction of the silicon germanium film being The germanium concentration distribution is formed by controlling the flow rate of the gas containing germanium so as to have a maximum concentration peak in an intermediate region in the thickness direction of the silicon germanium film.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  By depositing the silicon germanium film at a pressure in the normal pressure and sub-normal pressure regions, the deposition rate of the silicon germanium film can be increased.

  By forming a silicon germanium film using a batch type film forming apparatus, the manufacturing time of the semiconductor device can be shortened.

  By forming a silicon germanium film by generating a turbulent flow in the film forming gas introduced into the processing chamber of the film forming apparatus, the film quality and film thickness of the silicon germanium film can be made uniform.

  Since the germanium concentration distribution in the thickness direction of the silicon germanium film epitaxially grown on the semiconductor substrate has a peak in the middle region in the thickness direction of the silicon germanium film, defects in the silicon germanium film can be reduced. In addition, the surface can be further flattened.

  Before describing the present invention in detail, the meaning of terms in the present application will be described as follows.

  1. Gas turbulence refers to a state in which a vortex is generated in the gas flow and the vortex changes irregularly. In the turbulent flow of gas, the position, direction, shape, size, etc. of the vortex are not constant and vary irregularly or fluctuate.

  2. The normal pressure and quasi-normal pressure regions refer to a combination of the normal pressure region and the quasi-normal pressure region. The normal pressure region is a pressure of about 88000 to 115000 Pa (660 to 860 Torr). The quasi-normal pressure region is composed of a quasi-normal pressure depressurization region having a pressure of about 20000 to 88000 Pa (150 to 660 Torr) and a quasi-normal pressure pressurization region having a pressure of about 115,000 Pa to 180000 Pa (860 to 1350 Torr). Accordingly, the normal pressure and quasi-normal pressure regions correspond to pressures of about 20000 to 18000 Pa (150 to 1350 Torr, 0.2 to 1.8 atmospheres).

  3. An amorphous film is an amorphous film with no ordering of atomic arrangement, a polycrystalline film in which crystal grains with various crystal orientations gather at the grain boundary, and a fine film between amorphous and polycrystalline. A microcrystalline film having a crystal structure is included.

  4). When referring to the name of a substance such as silicon germanium, unless otherwise indicated, it does not indicate only the indicated substance, but the indicated substance (element, atomic group, molecule, compound, etc.) It shall be included as a component or as a main component. Therefore, in addition to the displayed gas components, etc., various additives such as additive gas, carrier gas, dilution gas, auxiliary component gas added for the purpose of secondary effects, or composite components shall not be excluded. .

  5. In the present application, a semiconductor device is not limited to a device manufactured on a single crystal silicon substrate, and unless otherwise specified, an SOI (Silicon On Insulator) substrate, an SOS (Silicon On Sapphire) substrate, It shall include those made on other substrates such as TFT (Thin Film Transistor) liquid crystal manufacturing substrates.

  6). A semiconductor substrate is a silicon or other semiconductor single crystal substrate (generally disk-shaped, semiconductor wafer), a sapphire substrate, a glass substrate, other insulating, anti-insulating, or semiconductor substrates used in the manufacture of semiconductor integrated circuits, and their composites. Say the target board.

  In the following embodiments, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments. However, unless otherwise specified, they are not irrelevant to each other. There are some or all of the modifications, details, supplementary explanations, and the like.

  Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and may be more or less than the specific number.

  Further, in the following embodiments, the constituent elements (including element steps and the like) are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say.

  Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.

  Also, components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof is omitted.

  In the drawings used in the present embodiment, hatching may be added even in a plan view for easy understanding of the drawings.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
FIG. 1 is a partially cutaway front view showing a conceptual structure of a semiconductor manufacturing apparatus used in the semiconductor device manufacturing process of the present embodiment. 2 is a partially cut-out top view of the semiconductor manufacturing apparatus of FIG. In FIG. 1, a conceptual cross section is shown for the notched portion.

  A semiconductor manufacturing apparatus 1 shown in FIGS. 1 and 2 is a film forming apparatus used in a process of forming a silicon germanium film or a silicon film on a semiconductor substrate, for example, a batch type CVD apparatus. For the sake of easy understanding, illustration and detailed description of the structure of the semiconductor device 1 other than the processing chamber 2 and the inside thereof are omitted.

  The semiconductor manufacturing apparatus 1 includes a reaction chamber or a processing chamber 2, a susceptor 3 disposed in the processing chamber 2, a susceptor support 4 that supports the susceptor 3, and a susceptor 3. The housed high-frequency coil 6, a gas nozzle 7 for introducing various gases into the processing chamber 2, and a gas exhaust port 8 for exhausting gas from the processing chamber 2 are provided.

  The processing chamber 2 is an airtight reaction chamber, and includes a base plate 9, a bell jar 10 connected to the base plate 9 through an O-ring or the like so as to be air tight, and a bell jar purge unit 11. The bell jar 10 is composed of a quartz bell jar 10a on the inner wall (inside) side and a stainless steel bell jar 10b on the outer wall (outside) side. The stainless bell jar 10b is provided with a viewing window 10c that allows the inside of the processing chamber 2 to be observed. ing.

  In the processing chamber 2 which is a space surrounded by the base plate 9 and the bell jar 10, the susceptor 3 is supported by the susceptor support 4 and is configured to be rotatable in the susceptor rotation direction 3a in the processing chamber 2. The susceptor 3 is made of, for example, carbon, and the surface thereof is coated with, for example, silicon carbide (SiC). In addition, a plurality of semiconductor wafers (semiconductor substrates) 12 can be arranged on the susceptor 3.

  The high frequency coil 6 accommodated in the coil cover 5 is connected to a high frequency power source (not shown) outside the processing chamber 2 and is configured to apply or supply a high frequency voltage or high frequency power from the high frequency power source to the high frequency coil 6. When high-frequency power is supplied to the high-frequency coil 6, an induced current is generated in the susceptor 3 whose inside is made of carbon or the like, and the temperature of the susceptor 3 can be raised to, for example, about 1200 ° C. Thereby, the semiconductor wafer 12 arrange | positioned on the susceptor 3 can be heated to desired temperature (RF heating system).

  The gas nozzle 7 is connected to a gas introduction unit (not shown), and is configured so that a desired gas can be introduced from the gas nozzle 7 into the processing chamber 2 at a desired flow rate. The gas exhaust port 8 is connected to a gas exhaust pipe (not shown) and configured to exhaust the gas introduced from the gas nozzle 7 into the processing chamber 2. In FIG. 2, only one gas exhaust port 8 is shown, but the gas exhaust port 8 is also formed at a position symmetrical to the illustrated gas exhaust port 8 (end of the processing chamber 2). The number of gas exhaust ports 8 can be increased or decreased as necessary.

  In the present embodiment, the gas nozzle 7 is disposed so as to protrude upward from the approximate center of the susceptor 3, and gas is introduced into the processing chamber 2 above the plurality of semiconductor wafers 12 disposed on the susceptor 3. It is configured as follows.

  3 is a side view conceptually showing the structure near the tip of the gas nozzle 7, and FIG. 4 is a top view thereof. In the gas nozzle 7, a plurality of holes 7 a are formed in the vicinity of the rounded tip, and a predetermined gas is discharged or introduced into the processing chamber 2 from each hole 7 a. Each hole 7a has a diameter of, for example, 4 mm, and nine holes 7a are formed at various positions on the curved surface at the tip of the gas nozzle 7, for example. For this reason, the hole 7a is directed in various directions, and the gas is released from the inside of the processing chamber 2 to the inner wall of the processing chamber 2 through the hole 7a of the gas nozzle 7. Further, the gas nozzle 7 can be configured to be able to rotate in the processing chamber 2.

The flow of the gas introduced or released into the processing chamber 2 from the plurality of holes 7 a of the gas nozzle 7 has various directions in the processing chamber 2. For example, as shown as a gas discharge direction 13 in FIGS. 1 to 4, a horizontal direction (a direction parallel to the susceptor 3, that is, a direction parallel to the main surface of the semiconductor wafer 12), upward from the gas nozzle 7 through the hole 7 a. Alternatively, the gas is released in a vertical direction (a direction perpendicular to the susceptor 3, that is, a direction perpendicular to the main surface of the semiconductor wafer 12) and an arbitrary direction between the horizontal and vertical directions. When the gas is discharged or ejected from the gas nozzle 7, the gas ejection speed from the hole 7 a of the gas nozzle 7 is, for example, 25 m / sec. The gas pressure (gas supply pressure) when the gas is discharged from the gas nozzle 7 is, for example, about 200000 Pa (about 2 kgf / cm ² ), and the gas flow rate is, for example, 170 slm (standard liters per minute). Further, the gas released into the processing chamber 2 from the hole 7 a of the gas nozzle 7 collides with the inner wall of the processing chamber 2 and the like. For this reason, the flow of the gas introduced into the processing chamber 2 does not become a laminar flow, but a turbulent flow is generated. In FIG. 1 and FIG. 2, an average flow or a typical gas flow 13 a in the processing chamber 2 is schematically indicated by an arrow, but turbulence causes a vortex in the gas flow in the processing chamber 2. (Vortex) occurs, and this vortex changes irregularly. The gas in which the turbulent flow is generated and the vortex is generated in the flow above the semiconductor wafer 12 is forcibly convected in the processing chamber 2. Further, the vortex of the gas flow in the processing chamber 2 is not constant and changes irregularly. For this reason, the gas in the processing chamber 2 is homogenized. Thereby, gas components can stay uniformly or homogeneously on the plurality of semiconductor wafers 12 disposed on the susceptor 3. Therefore, the silicon germanium film or silicon film formed on the semiconductor wafer 12 by the CVD method or the like can be made uniform in film quality and thickness between the semiconductor wafers 12. The gas that has not contributed to the reaction is discharged from the gas exhaust port 8 to the outside of the processing chamber 2. In this embodiment, the gas is discharged from the gas nozzle 7 in a plurality of directions, but it may be only in one direction, for example, one direction in the upward or vertical direction.

  Next, a manufacturing process of the semiconductor device of the present embodiment, for example, a MISFET (Metal Insulator Semiconductor Field Effect Transistor) will be described with reference to the drawings. 5 to 9 are main-portion cross-sectional views during the manufacturing process of the semiconductor device of the present embodiment.

  First, a plurality of semiconductor wafers (semiconductor substrates) 12 made of, for example, a silicon substrate are prepared. As the semiconductor wafer 12, for example, a silicon single crystal (100) 4 degree off substrate, that is, a single crystal silicon substrate (silicon wafer) having a main surface inclined by 4 degrees from the (100) plane of silicon can be used.

Next, the semiconductor wafer 12 is carried into the semiconductor device 1 and the semiconductor wafer 12 is placed on the susceptor 3. Then, high frequency power is applied or supplied from the high frequency power source to the high frequency coil 6 of the semiconductor manufacturing apparatus 1. Thereby, the susceptor 3 is heated by the induced current, and thereby the semiconductor wafer 12 is heated to a predetermined temperature. Then, a film forming gas is introduced into the processing chamber 2 from the gas nozzle 7. That is, for example, hydrogen gas (H ₂ ) as a carrier gas, monosilane (SiH ₄ ) gas as a silicon source gas, diborane (B ₂ H ₆ ) gas having a concentration of 30 ppm diluted with H ₂ as a P-type doping gas, and As a germanium source gas, for example, 1% concentration monogermane (GeH ₄ ) gas diluted with H ₂ is introduced into the processing chamber 2. The gas introduced into the processing chamber 2 reacts and deposits on the semiconductor wafer 12, whereby a silicon germanium film (SiGe film) 21 is epitaxially grown on each semiconductor wafer 12. At this time, the pressure in the processing chamber 2 is preferably a normal pressure and a quasi-normal pressure region pressure, and more preferably a normal pressure region pressure. That is, the pressure in the processing chamber 2 in the film formation process of the silicon germanium film is preferably in the range of 20000 to 18000 Pa (150 to 1350 Torr), more preferably 60000 to 140000 Pa (450 to 1050 Torr), and still more preferably. 88000 to 115000 Pa (660 to 860 Torr). Thereby, as described above, the hydrogen gas (H ₂ ), monosilane (SiH ₄ ) gas, diborane (B ₂ H ₆ ) gas, and monogermane (GeH ₄ ) gas released from the gas nozzle 7 in the processing chamber 2 are A turbulent flow can be generated in the processing chamber 2, and the film quality and film thickness of the silicon germanium film 21 can be made uniform.

Further, as described above, in the present embodiment, the pressure in the processing chamber 2 is the MBE apparatus (the pressure in the processing chamber during film formation is an ultrahigh vacuum region of about 10 ⁻⁴ to 10 ⁻³ Pa), UHV-CVD. Compared to the case of the apparatus (the pressure in the processing chamber during film formation is a high vacuum region of about 0.1 Pa) and the low pressure CVD device (the pressure in the processing chamber during film formation is a low pressure region of about 10 to 1000 Pa). Therefore, the growth rate or deposition rate of the silicon germanium film 21 can be increased as compared with the case where an MBE apparatus, a UHV-CVD apparatus, a low pressure CVD apparatus, or the like is used. Further, if the pressure in the processing chamber 2 is smaller than the pressure of the outside air within the range of normal pressure and quasi-normal pressure, the connection between the base plate 9 and the bell jar 10 via the O-ring or the like can be further strengthened.

As the silicon source gas, not only monosilane (SiH ₄ ) gas but also other silicon source, for example, disilane (Si ₂ H ₆ ) gas may be used. Alternatively, dichlorosilane (SiH ₂ Cl ₂ ) gas, trichlorosilane (SiHCl ₃ ) gas, or silicon tetrachloride (SiCl ₄ ) gas containing Cl element can be used as the silicon source gas. Further, HCl gas may be added to such a gas. Thereby, it is possible to improve the growth rate of the silicon germanium film 21 and improve the quality such as the reduction of foreign matter. As the germanium source gas, germanium tetrachloride (GeCl ₄ ) gas or Ge ₂ H ₆ gas may be used instead of GeH ₄ gas. Further, the P-type silicon germanium film 21 is formed by using a P-type doping gas, for example, B ₂ H ₆ gas, but an N-type doping gas, for example, phosphine (PH ₃ ) gas is used instead of the P-type doping gas. You can also. As a result, an N-type silicon germanium film can be formed on the semiconductor wafer 12.

Thereafter, the introduction of the monogermane gas into the processing chamber 2 is stopped, and the gas introduced into the processing chamber 2 from the gas nozzle 7 is replaced with hydrogen gas (H ₂ ) as a carrier gas and monosilane (SiH ₄ as a silicon source gas). ) Gas and B ₂ H ₆ gas as P-type doping gas. Thereby, the growth of the silicon germanium film 21 is completed, and the silicon film (strained silicon film) 22 is epitaxially grown on the silicon germanium film 21. At this time, due to the difference in lattice constant between silicon germanium and silicon, a silicon film 22 having a lattice constant larger than that of a normal silicon crystal, that is, a so-called strained silicon film 22 is formed on the silicon germanium film 21. In the strained silicon film 22, the mobility of electrons is improved (increased) compared to a normal silicon film. For this reason, as will be described later, in the MISFET formed in the strained silicon film 22, the mobility of electrons moving between the source and the drain is improved, and the speed of the semiconductor device can be increased.

  In this way, the silicon germanium film 21 and the strained silicon film 22 are epitaxially grown on each semiconductor wafer 12 to obtain the structure of FIG.

  After the semiconductor wafer 12 is taken out from the semiconductor device 1, semiconductor elements are formed in each of the semiconductor wafers 12. Here, a process of forming a semiconductor element on one semiconductor wafer 12 will be described, but a semiconductor element can be formed on other semiconductor wafers 12 in the same manner.

  Although not shown in FIG. 6, impurity ion implantation for forming a well region in the main surface of the semiconductor wafer 12 is performed as necessary. For example, if an impurity such as boron (B) is implanted, a P-type well region can be formed, and if an impurity such as phosphorus (P) is implanted, an N-type well region can be formed. Further, by using a photoresist as a mask, impurities can be implanted only in a desired region.

  Next, as shown in FIG. 6, an element isolation region 23 made of silicon oxide or the like is formed on the main surface of the semiconductor wafer (so-called SiGe epitaxial wafer) 12 on which the silicon germanium film 21 and the strained silicon film 22 are formed. The The element isolation region 23 can be formed by, for example, a LOCOS (Local Oxidation of Silicon) method. The element isolation region 23 may be formed by embedding a silicon oxide film in a groove formed in the main surface of the semiconductor wafer 12, for example, by STI (Shallow Trench Isolation).

  Then, a gate insulating film 24 is formed on the surface of the semiconductor wafer 12 (that is, the surface of the strained silicon film 22). The gate insulating film 24 is made of, for example, a thin silicon oxide film, and can be formed by thermally oxidizing the semiconductor wafer 12.

  Next, as shown in FIG. 7, a silicon germanium film 25 is formed on the semiconductor wafer 12. The silicon germanium film 25 can be formed in substantially the same manner as the silicon germanium film 21 using the semiconductor manufacturing apparatus 1. The underlying gate insulating film 24 is made of a silicon oxide film, and the silicon germanium film 25 formed on the gate insulating film 24 is made of a polycrystalline silicon germanium film. In addition, the silicon germanium film 25 made of a microcrystalline silicon germanium film or an amorphous silicon germanium film may be formed using the semiconductor manufacturing apparatus 1. That is, the silicon germanium film 25 can be composed of an amorphous silicon germanium film. In the film formation process of the silicon germanium film 25, the same gas as in the film formation process of the silicon germanium film 21 can be used. In this case, the silicon germanium film 25 is doped with phosphorus.

Next, a tungsten silicide (WSi ₂ ) film 26 is formed on the silicon germanium film 25. Then, as shown in FIG. 8, by patterning the silicon germanium film 25 and the tungsten silicide film 26 using a photolithography method and an etching method, a gate electrode composed of the silicon germanium film 25 and the tungsten silicide film 26 is formed. 27 is formed. TiSi ₂ or CoSi ₂ may be used instead of WSi ₂ .

  Next, an n-type semiconductor region (source, drain) 28 is formed by ion-implanting impurities such as phosphorus (P) into the regions on both sides of the gate electrode 27.

  As a result, an n-channel MISFET 29 is formed. Since the channel region of the MISFET 29 is formed in the strained silicon film 22, the mobility of electrons moving between the source and drain (n-type semiconductor region 28) of the MISFET 29 is improved, and the operation of the MISFET 29 can be speeded up. it can.

  Next, as shown in FIG. 9, an interlayer insulating film 30 is formed on the main surface of the semiconductor wafer 12. The interlayer insulating film 30 can be formed, for example, by depositing a silicon oxide film by a CVD method. Then, the interlayer insulating film 30 is dry-etched using a photoresist pattern (not shown) formed on the interlayer insulating film 30 as a mask, thereby forming a through hole or a contact hole 31 above the n-type semiconductor region 28 and the gate electrode 27. To do. Thereafter, the plug 32 filling the contact hole 31 is formed by, for example, a titanium nitride film and a tungsten film.

  Next, a barrier film, an aluminum alloy film, or the like is deposited on the interlayer insulating film 30, and a wiring (first layer wiring) 33 is formed by patterning using a photolithography method and an etching method. Then, an interlayer insulating film 34 is formed on the interlayer insulating film 30 so as to cover the wiring 33.

  Thereafter, although illustration and detailed description are omitted, vias or through holes that expose a part of the wiring 33 are formed in the interlayer insulating film 34, and plugs or plugs that fill the through holes in the same manner as the plugs 32 and the wirings 33. An upper layer wiring that is electrically connected to the wiring 33 is formed, and is diced as necessary to be divided into semiconductor device chips, whereby the semiconductor device of the present embodiment is manufactured. The number of wiring layers and the like can be changed as appropriate according to the design.

  According to the present embodiment, since the silicon germanium film 21 and the silicon germanium film 25 are formed at a pressure in the normal pressure and quasi-normal pressure regions, the deposition rate can be increased. Further, by using the batch type semiconductor manufacturing apparatus 1, the silicon germanium film 21 and the silicon germanium film 25 can be formed on a plurality of semiconductor wafers 12 at a time. For this reason, the manufacturing time of the semiconductor device can be shortened. The manufacturing cost of the semiconductor device can also be reduced.

  Further, since turbulent flow is generated in the processing chamber 2 of the semiconductor manufacturing apparatus 1 and the gas in the processing chamber 2 is forcibly convected to form the silicon germanium film 21 and the silicon germanium film 25, Thus, the film quality and film thickness of the silicon germanium film 21 and the silicon germanium film 25 can be made uniform. Further, the film quality and film thickness of the silicon germanium film 21 and the silicon germanium film 25 can be made uniform in the plane of the semiconductor wafer 12. For this reason, the reliability of the semiconductor device can be improved. In addition, the manufacturing yield of the semiconductor device can be improved.

  Further, when the pressure in the processing chamber 2 is not lower than the outside air, it is not necessary to connect the gas exhaust port 8 to a vacuum pump or the like. For this reason, the semiconductor manufacturing apparatus 1 does not require an evacuation facility and can be downsized. In addition, the manufacturing cost of the semiconductor device can be reduced.

  Further, even when the pressure in the processing chamber 2 is set lower than the outside air within the range of the normal pressure and sub-normal pressure regions, the pressure in the processing chamber 2 is the same as that of the MBE apparatus, UHV-CVD apparatus, reduced pressure CVD apparatus, etc. Since it is comparatively high, there is no need for an exhaust facility having a high displacement such as that used in an MBE apparatus, UHV-CVD apparatus or reduced pressure CVD apparatus.

  Further, when the pressure in the processing chamber 2 is set to be higher than the outside air within the range of the normal pressure and the sub-normal pressure region, the balance between the introduction of the gas into the processing chamber 2 and the exhaust of the gas from the processing chamber 2. A mechanism that takes this into consideration may be installed on the exhaust side.

  In this embodiment, an example of an n-channel MISFET is shown. However, in the case of a p-channel MISFET, a polycrystalline silicon germanium film 25 doped with boron (B) instead of phosphorus (P) is used. Used as part of the gate electrode 27. The polycrystalline silicon germanium film 25 doped with boron has an improved boron activation rate compared to the polycrystalline silicon film doped with boron. For this reason, depletion at the interface between the gate electrode 27 and the gate insulating film 24 can be suppressed by using the polycrystalline silicon germanium film 25 doped with boron for the gate electrode 27. The same effect is obtained when other impurities such as phosphorus (P) are doped in the silicon germanium film 25 as described above. The same effect can be obtained when the silicon germanium film 25 is made of a microcrystalline or amorphous silicon germanium film doped with boron or the like.

(Embodiment 2)
FIG. 10 is an explanatory diagram of a semiconductor manufacturing apparatus used in a semiconductor device manufacturing process according to another embodiment of the present invention.

  A semiconductor manufacturing apparatus 41 shown in FIG. 10 is a film forming apparatus used in a process of forming a silicon germanium film or a silicon film on a semiconductor substrate, and is a single wafer type CVD apparatus. For the sake of easy understanding, illustration and detailed description of the structure of the semiconductor device 41 other than the processing chamber 42 and the inside thereof are omitted.

  The semiconductor manufacturing apparatus 41 includes a processing chamber 42, a susceptor 43 disposed in the processing chamber 42, a susceptor support portion 44 that supports the susceptor 43, and a lower portion of the susceptor 43. A high-frequency coil 46, a gas nozzle 47 for introducing various gases into the processing chamber 42, and a gas exhaust port 48 for exhausting the gas from the processing chamber are provided.

  The processing chamber 42 is a reaction chamber capable of airtightness, and includes a base plate 49 and a bell jar 50 connected to the base plate 49 via an O-ring or the like so as to be airtight. Since the configuration of the bell jar 50 is substantially the same as that of the bell jar 10 of the first embodiment, detailed illustration and description are omitted.

  A susceptor 43 is supported by a susceptor support base 44 in a processing chamber 42 that is a space surrounded by a base plate 49 and a bell jar 50, and a large-diameter semiconductor wafer (semiconductor substrate) 52, for example, The semiconductor wafer 52 having a diameter of 200 mm or more can be arranged. The susceptor 43 is made of, for example, carbon, and the surface thereof is coated with, for example, silicon carbide (SiC).

  The high frequency coil 46 accommodated in the coil cover 5 is connected to a high frequency power source (not shown) outside the processing chamber 42 and is configured to apply or supply a high frequency voltage or high frequency power from the high frequency power source to the high frequency coil 46. When high-frequency power is supplied to the high-frequency coil 46, an induced current is generated in the susceptor 43 made of carbon or the like. Thereby, the semiconductor wafer 52 disposed on the susceptor 43 can be heated to a desired temperature.

  The gas nozzle 47 is connected to a gas introduction unit (not shown), and is configured such that a desired gas can be introduced from the gas nozzle 47 into the processing chamber 42 at a desired flow rate. The gas exhaust port 48 is connected to a gas exhaust pipe (not shown) and configured to exhaust the gas introduced into the processing chamber 42 from the gas nozzle 47.

  The gas nozzle 47 is installed in the upper part of the processing chamber 42, and is configured to introduce a predetermined gas into the processing chamber 42 above the semiconductor wafer 52 disposed on the susceptor 43. The gas nozzle 47 is bifurcated and has two tip portions. In each of the two tip portions of the gas nozzle 47, a plurality of holes (not shown) are formed in the same manner as the tip portion of the gas nozzle 7 in the first embodiment, and a predetermined gas flows from each hole into the processing chamber 42. Released or introduced into. Similar to the gas nozzle 7, the holes of the gas nozzle 47 are formed at various positions on the curved surface at the tip of the gas nozzle 47. Further, the gas nozzle may be configured not to be divided into two or more than three. Further, the gas nozzle 47 can be configured to be able to rotate in the processing chamber 42.

  For this reason, the film-forming gas is released from the inside of the processing chamber 42 in a plurality of directions toward the inner wall of the processing chamber 42 through the holes of the gas nozzle 47. As can be seen from the gas flow 53 schematically shown by arrows in FIG. 10, for example, from the gas nozzle 47, the horizontal direction (direction parallel to the susceptor 43, that is, the direction parallel to the main surface of the semiconductor wafer 52), upward or vertical. The gas is released in a direction (a direction perpendicular to the susceptor 43, that is, a direction perpendicular to the main surface of the semiconductor wafer 52) and an arbitrary direction between the horizontal and vertical directions. The gas released from the hole of the gas nozzle 47 into the processing chamber 42 generates turbulent flow in the processing chamber 42 as in the first embodiment, and generates a vortex in the gas flow above the semiconductor wafer 52. Further, the vortex of the gas flow in the processing chamber 42 is not constant and changes irregularly. Thereby, the gas in the processing chamber 42 is forcibly convected, and the film quality and film thickness of the silicon germanium film and the silicon film formed on the semiconductor wafer 52 can be made uniform in the surface of the semiconductor wafer 52. In the case of this embodiment, the gas is discharged from the gas nozzle 47 in a plurality of directions, but it may be in one direction, for example, only one direction upward or in the vertical direction.

  The manufacturing process of the semiconductor device using the semiconductor manufacturing apparatus 41 is almost the same as that of the first embodiment except that a silicon germanium film is formed using the semiconductor manufacturing apparatus 41 for each semiconductor wafer 52. The description is omitted here.

  According to the present embodiment, even when a silicon germanium film is formed on a semiconductor wafer 52 having a large diameter (for example, a diameter of 200 mm or more) using a single wafer type film forming apparatus, the film forming speed of the silicon germanium film is increased. The film thickness and film quality can be made uniform. A semiconductor manufacturing apparatus having a plurality of such processing chambers is also possible.

(Embodiment 3)
FIG. 11 is a sectional view conceptually showing a state in which a silicon germanium film 61 and a silicon film (strained silicon film) 62 are formed on a semiconductor wafer (semiconductor substrate) 60.

  The lattice constant of silicon germanium increases with increasing germanium concentration. For this reason, when the silicon germanium film 61 is formed on the semiconductor wafer 60 made of single crystal silicon, if the silicon germanium film having a high germanium concentration is epitaxially grown on the semiconductor wafer 60, the silicon germanium film is caused by the difference in lattice constant. May be greatly distorted to cause defects such as high density defects in the silicon germanium film. For this reason, the germanium concentration in the silicon germanium film 61 is relatively small in the vicinity of the interface between the semiconductor wafer 60 and the silicon germanium film 61, and the lattice constant is easily matched at the interface between the semiconductor wafer 60 and the silicon germanium film 61. Then, as the formation of the silicon germanium film 61 proceeds, for example, the germanium concentration is increased stepwise to increase the germanium concentration, and when the predetermined germanium concentration is reached, the germanium concentration becomes constant. A silicon germanium film 61 is formed (forward step graded process). Thereby, the generation of defects concentrated near the interface between the semiconductor wafer 60 and the silicon germanium film 61 can be suppressed, and the threading dislocation density in the silicon germanium film 61 can be reduced. On the other hand, when the silicon film (strained silicon film) 62 is epitaxially grown on the silicon germanium film 61, the silicon film 62 formed thereon is distorted according to the lattice constant of the underlying silicon germanium film 61 (a normal silicon film). Although the strained silicon film 62 is relatively thin (for example, 40 to 50 nm), dislocations hardly occur in the strained silicon film 62.

  However, according to studies by the present inventors, the germanium concentration in the thickness direction of the silicon germanium film 61 is gradually increased from the interface between the semiconductor wafer 60 and the silicon germanium film 61 toward the inner direction of the silicon germanium film 61 as described above. When stress is increased, stress or stress is applied in the same direction in the silicon germanium film 61, and various defects caused by the accumulated stress, such as an increase in defects in the silicon germanium film 61, silicon germanium film 61 and strain, It has been found that the roughness of the surface of the silicon film 62 increases.

  Therefore, in the present embodiment, the above-mentioned inconvenience caused by increasing the germanium concentration in the thickness direction of the silicon germanium film 61 from the interface between the semiconductor wafer 60 and the silicon germanium film 61 toward the inner direction of the silicon germanium film 61. We considered improvement.

  A method for manufacturing a semiconductor device of the present embodiment, here, a process of forming a silicon germanium film and a silicon film (strained silicon film) over a semiconductor substrate will be described.

FIG. 12 is a fragmentary cross-sectional view of the semiconductor device of the present embodiment during the manufacturing process. A silicon germanium film (SiGe film) 71 and a silicon film (strained silicon film) 72 are formed on a semiconductor wafer (semiconductor substrate) 70. The formed state is shown. FIG. 13 is a graph showing the temperature of the semiconductor wafer 70 and the flow rate of monogermane (GeH ₄ ) gas introduced into the film forming apparatus in the process of forming the silicon germanium film 71 and the silicon film 72. The vertical axis of the graph of FIG. 13 corresponds to the temperature of the semiconductor wafer and the flow rate of monogermane (GeH ₄ ) gas. Also, it should be noted that the horizontal axis of the graph of FIG. 13 corresponds to time or time, but is an arbitrary unit, and the time intervals of the times t _{1 to} t ₁₇ are not uniform.

  First, a semiconductor wafer (semiconductor substrate) 70 is carried into a film forming apparatus. In this case, if the above-described semiconductor manufacturing apparatus 1 or semiconductor manufacturing apparatus 41 is used as the film forming apparatus and the silicon germanium film and the silicon film (strained silicon film) are epitaxially grown at a pressure in the normal pressure and quasi-normal pressure regions, the time can be shortened. It is more preferable because a silicon germanium film and a strained silicon film can be formed on a large number of semiconductor wafers, or the film forming speed can be improved. However, it is also possible to epitaxially grow the silicon germanium film and the strained silicon film on the semiconductor wafer 70 under vacuum using another film forming apparatus such as a low pressure CVD apparatus or a UHV-CVD apparatus. Here, the case where the said semiconductor manufacturing apparatus 1 is used is demonstrated.

  As the semiconductor wafer 70, for example, a silicon single crystal (100) 4 degree off substrate, that is, a single crystal silicon substrate having a principal surface inclined by 4 degrees from the (100) plane of silicon can be used.

Nitrogen (N ₂ ) gas is introduced at a flow rate of, for example, 150 slm (standard liters per minute) into the processing chamber 2 of the semiconductor manufacturing apparatus 1 in which the semiconductor wafer 70 is arranged, and the air in the processing chamber 2 is sufficiently removed. . Thereby, it can prevent that air and the hydrogen gas introduce | transduced later react. In the present embodiment, the gas flow rate indicates a gas flow rate calibrated at 0 ° C. and 1 atm.

Then, introduction of nitrogen gas is stopped at time (time) t ₁ , and hydrogen (H ₂ ) gas as a carrier gas is introduced into the processing chamber 2 at a flow rate of, for example, 170 slm. Incidentally, introduction of hydrogen gas is continued until the time t _17.

After nitrogen gas in the processing chamber 2 is removed, it starts the application or supply of the high-frequency power to the high frequency coil 6 of the semiconductor manufacturing device 1 at time t _2. Thereby, the susceptor 3 is heated by the induced current, and the temperature of the semiconductor wafer 70 rises. Then, the semiconductor wafer 70 is heated at 1040 ° C., for example, for about 10 minutes (corresponding to time t _{3 to} t ₄ ). By heating the semiconductor wafer 70 in a reducing atmosphere such as a hydrogen atmosphere (preheating treatment), the natural oxide film on the surface of the semiconductor wafer 70 is removed, and the surface of the semiconductor wafer is cleaned or cleaned.

Next, the temperature of the semiconductor wafer 70 is lowered to, for example, 980 ° C. from time t _{4 to} t ₅ . Then, over time t ₅ to t ₆ (for example, about 1 minute), monosilane (SiH ₄ ) gas as a silicon source gas is added into the processing chamber 2 in addition to the hydrogen gas, for example, at 40 sccm (standard cubic centimeters per minute). Introduce at flow rate. As a result, a silicon film 70a of about several nm is formed on the semiconductor wafer 70, and a cleaner silicon surface is obtained. Then stopping the introduction of the monosilane gas at time t _6, to lower the temperature of the semiconductor wafer 70, for example, 800 ° C..

Next, at time t ₇ , in addition to hydrogen gas as the carrier gas, monosilane (SiH ₄ ) gas as silicon source gas, diborane (B ₂ H ₆ ) gas as P-type doping gas, and germanium source gas Monogermane (GeH ₄ ) gas is introduced into the processing chamber 2 at a flow rate of, for example, 20 sccm, 60 sccm, and 80 sccm, respectively. As a result, epitaxial growth of the silicon germanium film 71 is started, but since the germane gas flow rate is relatively low, the germanium concentration of the silicon germanium film 71 formed at this stage is relatively low. The introduction of monosilane (SiH ₄ ) gas and diborane (B ₂ H ₆ ) gas is continued at the same flow rate, for example, until time t ₁₄ .

Then, increasing the flow rate of monogermane gas is introduced into the processing chamber 2 at time t _8, for example, 170 sccm. Thereby, the germanium concentration of the silicon germanium film 71 to be formed is slightly increased.

Thereafter, at times t ₉ , t ₁₀ and t ₁₁ , the flow rate of the monogermane gas introduced into the processing chamber 2 is sequentially increased to, for example, 420 sccm, 1050 sccm, and 3000 sccm. At each flow rate stage, the germanium concentration of the silicon germanium film 71 to be formed increases sequentially as the flow rate of the monogerman gas increases.

Then, reducing the flow rate of monogermane gas is introduced into the processing chamber 2 at time _{t 12,} for example, in 2100Sccm. As a result, the germanium concentration of the silicon germanium film 71 formed at the time t _{12 to} t ₁₃ (monogerman gas flow rate 2100 sccm) is the silicon germanium formed at the time t _{11 to} t ₁₂ (monogerman gas flow rate 3000 sccm). It becomes lower than the germanium concentration of the film 71.

Next, to stop the introduction of the mono-germane gas into the process chamber 2 at time t ₁₃ (monosilane gas and the introduction of diborane gas continues). Thereby, the epitaxial growth of the silicon germanium film 71 is completed, and the silicon film (strained silicon film) 72 is epitaxially grown on the silicon germanium film 71. The time _t 7 _~t thickness for example 3~4μm about the silicon-germanium film 71 which is formed in _13, the thickness of the strained silicon film 72 is deposited on the silicon-germanium film 71 at time _t 13 _{~t 14} For example, it is about 40 to 50 nm.

Thereafter, at time t ₁₄ , the introduction of monosilane gas and diborane gas into the processing chamber 2 is stopped to finish the formation of the strained silicon film 72, and the supply of high-frequency power to the high-frequency coil 6 is stopped, and the temperature of the semiconductor wafer 70 is stopped. For example, near room temperature. Then, by stopping the introduction of hydrogen gas into the processing chamber 2 at time t ₁₆ and introducing nitrogen gas. After the hydrogen gas in the processing chamber 2 is sufficiently removed, the semiconductor wafer 70 is taken out from the semiconductor manufacturing apparatus 1. FIG. 12 corresponds to the state in which the silicon germanium film 71 and the silicon film (strained silicon film) 72 are formed on the semiconductor wafer 70 in this way. The taken-out semiconductor wafer 70 is sent to the next manufacturing process, and semiconductor elements are formed on the semiconductor wafer 70.

  Since the subsequent manufacturing steps of the semiconductor device are substantially the same as those of the first embodiment, description thereof is omitted here.

In the above embodiment, the monogermane gas flow rate was increased or decreased stepwise from time t ₇ to t ₁₂ as shown in the graph of FIG. 13, but as shown in the graph of FIG. a, it is also possible to continuously increase or decrease the flow rate of mono-germane gas toward time t ₇ ~t _12.

  FIG. 15 is a graph showing the germanium concentration distribution in the thickness direction of the silicon germanium film 71 formed according to the above embodiment, and shows the result (actual measurement value) analyzed by the SIMS (secondary ion mass spectroscopy) method. . The horizontal axis of the graph of FIG. 15 corresponds to the distance (depth) in the depth direction from the surface of the strained silicon film, and the vertical axis of the graph corresponds to the germanium concentration (Ge concentration).

As can be seen from FIG. 15, the germanium concentration distribution in the thickness direction of the silicon germanium film 71 is the interface of the silicon germanium film 71 on the semiconductor wafer (semiconductor substrate) 70 side (the silicon germanium film 71 and the semiconductor wafer 70 or the silicon film 70 a. It increases stepwise from the interface) toward the inside of the silicon germanium film 71, but decreases after a maximum value or peak is formed in an intermediate region in the thickness direction of the silicon germanium film 71. The germanium concentration of the silicon germanium film 71 depends on the flow rate of the germanium source gas, here monogermane (GeH ₄ ) gas, during the film forming process. The germanium concentration is increased stepwise from the interface of the silicon germanium film 71 on the semiconductor wafer 70 side to the inside of the silicon germanium film 71 (this concentration increasing region and its vicinity are referred to as a forward step graded region). This is because the flow rate of monogermane gas was increased stepwise to 80 sccm, 170 sccm, 420 sccm, 1050 sccm, and 3000 sccm in the step of forming the silicon germanium film 71. Therefore, the region of the silicon germanium film 71 where the germanium concentration reaches the maximum value or the peak is a film formation stage (time t _{11 to} t) in which the flow rate of the monogerman gas is maximum (3000 sccm) in the film formation process of the silicon germanium film 71. ₁₂ ). After the germanium concentration of the silicon germanium film 71 forms a peak, the silicon germanium film 71 decreases stepwise in the direction of the interface on the strained silicon film 72 side (interface between the silicon germanium film 71 and the strained silicon film 72) (this concentration). The reason why the decrease region and the vicinity thereof are referred to as a reverse step graded region) is that the flow rate of the monogerman gas was decreased from 3000 sccm to 2100 sccm in the film formation process of the silicon germanium film 71. After the monogermane gas flow rate was maintained at 2100 sccm during the time t _{12 to} t ₁₃ , the introduction of the monogermane gas was stopped, so that the germanium concentration of the silicon germanium film 71 once decreased from the peak in the reverse step graded region. After that, it becomes almost constant up to the vicinity of the interface between the silicon germanium film 71 and the strained silicon film 72. In the graph of FIG. 15, the region where the germanium concentration rapidly decreases in the region where the distance from the surface of the strained silicon film 72 is several tens of nm corresponds to the region where the strained silicon film 72 is formed.

  FIG. 16 is a graph schematically showing a germanium concentration distribution in the thickness direction of the silicon germanium film 71 when the silicon germanium film 71 is formed according to the present embodiment, and corresponds to FIG. FIG. 17 is a graph schematically showing the germanium concentration distribution in the thickness direction of the silicon germanium film 71 when the silicon germanium film 71 is formed by continuously increasing and decreasing the flow rate of the monogerman gas as shown in FIG. It is. The horizontal axis of the graphs of FIGS. 16 and 17 corresponds to the distance (depth) in the depth direction from the surface of the strained silicon film 72. The vertical axis of the graphs of FIGS. 16 and 17 corresponds to the germanium concentration (Ge concentration).

The germanium concentration Y ₁ of the silicon germanium film 71 in the vicinity of the interface between the silicon germanium film 71 and the strained silicon film 72 is preferably 5 to 40% (atomic%), more preferably 10 to 30% (atomic%). More preferably, it is 15 to 25% (atomic%). As a result, the strained silicon film 72 having the optimum lattice constant for improving the electron mobility can be accurately formed on the silicon germanium film 71, and a high-speed semiconductor device can be manufactured.

The difference between the germanium concentration peak value Y ₂ in the silicon germanium film 71 and the germanium concentration Y ₁ , that is, Y ₂ -Y ₁ is preferably 1 to 40% (atomic%), more preferably 3 to 3. It is 20% (atomic%), more preferably 5 to 10% (atomic%). The ratio of the germanium concentration peak value Y _{2 in} the silicon germanium film 71 to the germanium concentration Y ₁ , that is, Y ₂ / Y ₁ is preferably 1.02 to 9.0, more preferably 1 .1 to 3.0, more preferably 1.2 to 1.7. Thereby, as will be described later, the strain, stress, or stress in the silicon germanium film 71 can be relaxed, and the silicon germanium film 71 and the strained silicon film 72 with suppressed crystal defects can be formed. Therefore, a highly reliable and high performance semiconductor device can be realized.

Further, the thickness T ₁ of the region where the germanium concentration is changed or increased is, for example, about 1.5 to ₂ μm, and the thickness T ₂ of the region where the germanium concentration of the silicon germanium film 71 is uniform is, for example, about 1.5 to ₂ μm. It is. Further, the interval between the steps when the germanium concentration is changed stepwise is, for example, about 0.3 to 0.5 μm.

Next, in order to evaluate crystal defects in the silicon germanium film 71, the maximum threading dislocation density of the silicon germanium film 71 was measured. The maximum threading dislocation density was determined by selectively etching a semiconductor wafer (semiconductor substrate) 70 on which the silicon germanium film 71 and the strained silicon film 72 were formed, and observing the surface with a metal microscope. As a result, the maximum threading dislocation density of the silicon germanium film 71 formed according to the present embodiment was about 1 × 10 ⁴ cm ⁻² or less.

As a comparative example, the germanium concentration is increased stepwise from the initial stage of the formation of the silicon germanium film, and after the germanium concentration reaches the maximum value, the silicon germanium film is made constant without decreasing the germanium concentration. The maximum threading dislocation density was also measured when the film was formed (that is, in the case of the silicon germanium film 61). In the case of this comparative example, the maximum threading dislocation density was about 1 × 10 ⁶ cm ⁻² .

  Therefore, as in the present embodiment, the germanium concentration is increased stepwise from the initial stage of the formation of the silicon germanium film, and after the germanium concentration reaches the maximum value, the silicon germanium film is once decreased. By depositing 71, the maximum threading dislocation density can be reduced. For this reason, it becomes possible to reduce the defect density of the silicon germanium film 71 and the strained silicon film 72 formed thereon. Thereby, the reliability of the semiconductor device can be improved. In addition, the manufacturing yield of the semiconductor device can be improved.

  As described above, when the germanium concentration in the thickness direction of the silicon germanium film 71 is gradually increased from the interface on the semiconductor wafer (semiconductor substrate) 70 side toward the inside of the silicon germanium film 71, stress or stress is generated in the silicon germanium film 71. Are applied in the same direction and the stress is accumulated. As in the present embodiment, by reducing the germanium concentration after the germanium concentration reaches the peak, the stress accumulated in the forward step graded region can be relaxed in the vicinity of the reverse step graded region. Therefore, defects in the silicon germanium film 71 near the interface between the silicon germanium film 71 and the strained silicon film 72 can be reduced. As a result, the strained silicon film 72 can be epitaxially grown on the underlying silicon germanium film 71 with few defects. For this reason, generation | occurrence | production of the defect in the distortion silicon film 72 can also be suppressed. Note that such an effect is obtained when the germanium concentration of the silicon germanium film 71 is reduced in a stepwise manner in the direction of the interface between the silicon germanium film 71 and the strained silicon film 72 after the germanium concentration of the silicon germanium film 71 forms a peak (FIG. 16). It can be obtained in the same manner whether it is a germanium concentration distribution) or continuously reduced (corresponding to the germanium concentration distribution in FIG. 17).

  Next, the surface roughness of the semiconductor wafer (semiconductor substrate) 70 on which the silicon germanium film 71 was formed according to the present embodiment was measured. Here, a silicon germanium film 71 and a strained silicon film 72 are formed on a semiconductor wafer 70, the surface roughness of the surface (the strained silicon film surface) is measured by AFM (atomic force microscopy), and the surface roughness RMS ( root mean square) was calculated. The surface roughness of the thin strained silicon film 72 depends on the surface roughness of the underlying silicon germanium film 71.

  When the silicon germanium film 71 is formed according to the present embodiment, when the deposition temperature of the silicon germanium film 71 is 777 ° C., the RMS of the surface roughness is 3.6 nm, and the deposition temperature of the silicon germanium film 71 is 800 ° C. In this case, the RMS of the surface roughness was 2.5 nm.

  As a comparative example, the germanium concentration is increased stepwise from the initial stage of the formation of the silicon germanium film, and after the germanium concentration reaches the maximum value, the silicon germanium film is made constant without decreasing the germanium concentration. Even when the film was formed (that is, in the case of the silicon germanium film 61), the RMS of the surface roughness was measured. However, the deposition temperature of the silicon germanium film 61 is 777 ° C. In the case of this comparative example, the RMS of the surface roughness was 4.1 nm.

  Therefore, as in the present embodiment, the germanium concentration is increased stepwise from the initial stage of the formation of the silicon germanium film, and after the germanium concentration reaches the maximum value, the silicon germanium film is once decreased. By forming 71, the surface roughness can be reduced. Therefore, the surface roughness of the silicon germanium film 71 and the strained silicon film 72 formed thereon can be reduced, and the reliability of the semiconductor device can be improved. In addition, the manufacturing yield of the semiconductor device can be improved. Further, the surface roughness can be further reduced by increasing the deposition temperature of the silicon germanium film 71. Note that such an effect is obtained when the germanium concentration of the silicon germanium film 71 is reduced in a stepwise manner in the direction of the interface between the silicon germanium film 71 and the strained silicon film 72 after the germanium concentration of the silicon germanium film 71 forms a peak (FIG. 16). It can be obtained in the same manner whether it is a germanium concentration distribution) or continuously reduced (corresponding to the germanium concentration distribution in FIG. 17).

FIG. 18 is a graph showing the results of measuring the lattice constant elongation of the strained silicon film 72 formed on the silicon germanium film 71 formed according to the present embodiment. The horizontal axis of the graph of FIG. 18 corresponds to the germanium concentration of the silicon germanium film 71 in the vicinity of the interface between the silicon germanium film 71 and the strained silicon film 72 (Y _{1 in} the graphs of FIGS. 16 and 17). The vertical axis of the graph of FIG. 18 corresponds to the elongation of the lattice constant of the strained silicon film 72 in the xy direction (in-plane direction parallel to the main surface of the semiconductor wafer 70), and the lattice constant of a normal silicon single crystal is 1 The relative value is shown. 18 corresponds to the actually measured value of the lattice constant of the strained silicon film 72, and the straight line in the graph is a theoretical value showing the relationship between the lattice constant of silicon germanium and the germanium concentration (when cubic strain relaxation is performed). ).

As can be seen from the graph of FIG. 18, the measured lattice constant of the strained silicon film 72 substantially coincides with the theoretical line indicating the relationship between the lattice constant of silicon germanium and the germanium concentration. That is, the lattice constant of the strained silicon film 72 has a lattice constant extended (distorted) corresponding to the lattice constant of the silicon germanium film 71 as the underlying layer. Therefore, the strained silicon film 72 formed in accordance with the present embodiment has a strain corresponding to the germanium concentration (Y ₁ ) of the underlying silicon germanium film 71, and the silicon germanium film 71 is sufficiently relaxed. I can confirm that.

  Next, a processing method of the semiconductor wafer (semiconductor substrate) 70 before forming the silicon germanium film 71 will be described. More preferably, the silicon germanium film 71 is epitaxially grown on the semiconductor wafer 70 after the following treatment. The following processing method can also be applied as a processing method for the semiconductor wafer (semiconductor substrate) 12 before the silicon germanium film 21 is formed in the first embodiment. Of course, it is more preferable that the germanium film 21 is epitaxially grown on the semiconductor wafer 12.

  For example, the semiconductor wafer 70 is heated to, for example, 1040 ° C. in a reducing atmosphere such as hydrogen gas (preheating treatment), thereby removing a natural oxide film on the surface of the semiconductor wafer 70 and cleaning the surface of the semiconductor wafer 70. Can be As a result, the silicon germanium film 71 can be epitaxially grown on the clean surface of the semiconductor wafer 70.

Further, after the natural oxide film is removed by the preheating process, monosilane gas (SiH ₄ ) is introduced into the processing chamber 2 and the semiconductor wafer 70 is heated at, for example, 980 ° C. to form a thin silicon film 70 a on the semiconductor wafer 70. It can also be epitaxially grown to form a clean silicon surface. In the embodiment described according to FIG. 13, this process is performed.

  Alternatively, hydrogen chloride (HCl) gas is introduced into the processing chamber 2 and the semiconductor wafer 70 is heated at, for example, 900 ° C. to etch the surface of the semiconductor wafer 70 to remove the natural oxide film on the surface of the semiconductor wafer 70. it can. This process is particularly effective when the temperature of the semiconductor wafer 70 must be suppressed to 1000 ° C. or lower.

  Alternatively, after the preheating process is performed to clean the surface of the semiconductor wafer 70 as described above, the surface of the semiconductor wafer 70 is etched by introducing hydrogen chloride gas into the processing chamber 2 as described above. You can also.

  Alternatively, after the preheating treatment is performed in order to clean the surface of the semiconductor wafer 70 as described above, hydrogen chloride gas is further introduced into the processing chamber 2 as described above to etch the surface of the semiconductor wafer 70. After that, a thin silicon film 70a can be epitaxially grown on the semiconductor wafer 70 as described above.

  In these surface treatment methods, the case where the silicon germanium film 71 is formed on the semiconductor wafer 70 has been described. However, a silicon germanium film or a silicon film is further formed on the silicon germanium film 71 already formed on the semiconductor wafer 70. It is also effective as a surface treatment method. Further, for example, after the surface of the silicon germanium film 71 is polished by CMP (Chemical Mechanical Polishing) or the like, it is also effective as a surface treatment method for further forming a silicon germanium film or a silicon film.

In the above embodiment, monosilane (SiH ₄ ) gas is used as the silicon source gas. However, SiH ₂ Cl ₂ gas can be used as the silicon source gas instead of SiH ₄ gas. As a result, the growth rate of the silicon germanium film 71 and the strained silicon film 72 can be further improved, and the generation of foreign matter can be suppressed.

Also, initially using a _SiH 2 Cl ₂ gas as a silicon source gas, (the last few minutes during the time _t 12 _{~t 13} of the graph, for example, FIG. 13) and the strained silicon final stage of forming the silicon-germanium film 71 It is also possible to switch the silicon source gas to the monosilane (SiH ₄ ) gas in the film formation stage of the film 72 (time t _{13 to} t ₁₄ ). Thereby, the surface of the grown film can be made flatter. Further, it is effective to use monosilane gas only for the strained silicon film 72.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  Although the semiconductor device having a MISFET has been described in the above embodiment, the present invention is not limited to this, and can be applied to various semiconductor device manufacturing methods and semiconductor devices in which a silicon germanium film is formed. it can. For example, a SiGe film can be selectively formed as the base portion of the bipolar element.

  The present invention can be applied to a semiconductor device manufacturing method and a semiconductor device in which a silicon germanium film is formed on a semiconductor substrate.

1 is a partially cutaway front view showing a conceptual structure of a semiconductor manufacturing apparatus used in a semiconductor device manufacturing process according to an embodiment of the present invention; FIG. 2 is a partially cutaway top view of the semiconductor manufacturing apparatus of FIG. 1. It is a side view which shows notionally the structure near the front-end | tip of the gas nozzle of the semiconductor manufacturing apparatus of FIG. It is a top view of the gas nozzle of FIG. It is principal part sectional drawing in the manufacturing process of the semiconductor device which is one embodiment of this invention. FIG. 6 is a fragmentary cross-sectional view of the semiconductor device during a manufacturing step following that of FIG. 5; FIG. 7 is a fragmentary cross-sectional view of the semiconductor device during a manufacturing step following that of FIG. 6; FIG. 8 is an essential part cross sectional view of the semiconductor device during a manufacturing step following FIG. 7; FIG. 9 is an essential part cross sectional view of the semiconductor device during a manufacturing step following FIG. 8; It is explanatory drawing of the semiconductor manufacturing apparatus used at the manufacturing process of the semiconductor device which is other embodiment of this invention. It is sectional drawing which shows notionally the state which formed the silicon germanium film | membrane and the silicon film on the semiconductor wafer. It is principal part sectional drawing in the manufacturing process of the semiconductor device which is the other form of this invention. Silicon germanium film and the strained silicon film monogerman be introduced into the temperature and the film formation apparatus of the semiconductor wafer in the step of forming (GeH ₄₎ is a graph showing the flow rate of the gas. Silicon germanium film and the strained silicon film monogerman be introduced into the temperature and the film formation apparatus of the semiconductor wafer in the step of forming (GeH ₄₎ is a graph showing the flow rate of the gas. It is a graph which shows the germanium density | concentration distribution of the thickness direction of a silicon germanium film | membrane. It is a graph which shows typically the germanium concentration distribution of the thickness direction of a silicon germanium film. It is a graph which shows typically the germanium concentration distribution of the thickness direction of a silicon germanium film. It is a graph which shows the result of having measured the elongation rate of the lattice constant of the strained silicon film formed on the silicon germanium film.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor manufacturing apparatus 2 Processing chamber 3 Susceptor 3a Susceptor rotation direction 4 Susceptor support stand 5 Coil cover 6 High frequency coil 7 Gas nozzle 7a Hole (hole of a gas nozzle)
8 gas exhaust port 9 base plate 10 bell jar 10a quartz bell jar 10b stainless steel bell jar 10c viewing window 11 bell jar purge section 12 semiconductor wafer (semiconductor substrate)
13 Gas emission direction 13a Gas flow 21 Silicon germanium film (SiGe film)
22 Silicon film (strained silicon film)
23 element isolation region 24 gate insulating film 25 silicon germanium film 26 tungsten silicide (WSi ₂ ) film 27 gate electrode 28 n-type semiconductor region (source, drain)
29 n-channel MISFET
30 Interlayer insulating film 31 Contact hole 32 Plug 33 Wiring (first layer wiring)
34 Interlayer insulating film 41 Semiconductor manufacturing apparatus 42 Processing chamber 43 Susceptor 44 Susceptor support 45 Coil cover 46 High frequency coil 47 Gas nozzle 48 Gas exhaust port 49 Base plate 50 Berja 52 Semiconductor wafer (semiconductor substrate)
53 Gas flow 60 Semiconductor wafer (semiconductor substrate)
61 Silicon germanium film 62 Silicon film (strained silicon) film 70 Semiconductor wafer (semiconductor substrate)
70a Silicon film 71 Silicon germanium film (SiGe film)
72 Silicon film (strained silicon film)

Claims (20)

A semiconductor substrate;
A silicon germanium film epitaxially grown on the semiconductor substrate;
A silicon film epitaxially grown on the silicon germanium film;
Comprising
The semiconductor device characterized in that the germanium concentration distribution in the thickness direction of the silicon germanium film has a maximum concentration peak in an intermediate region in the thickness direction of the silicon germanium film. The semiconductor device according to claim 1,
A semiconductor device further comprising a silicon film formed between the semiconductor substrate and the silicon germanium film. The semiconductor device according to claim 1,
The germanium concentration distribution in the thickness direction of the silicon germanium film increases in the direction from the vicinity of the interface on the semiconductor substrate side toward the inside of the silicon germanium film, and has the peak of the maximum concentration in the intermediate region. A semiconductor device characterized in that it decreases once in a direction toward the interface on the silicon film side, and thereafter is substantially constant up to the interface on the silicon film side. The semiconductor device according to claim 1,
A semiconductor device, wherein a germanium concentration of the silicon germanium film in the vicinity of an interface between the silicon germanium film and the silicon film is in a range of 5 to 40 atomic%. The semiconductor device according to claim 1,
The difference between the peak of the germanium concentration of the silicon germanium film and the germanium concentration of the silicon germanium film in the vicinity of the interface between the silicon germanium film and the silicon film is in the range of 1 to 40 atomic%. A semiconductor device. The semiconductor device according to claim 1,
The difference between the peak of the germanium concentration of the silicon germanium film and the germanium concentration of the silicon germanium film in the vicinity of the interface between the silicon germanium film and the silicon film is in the range of 3 to 20 atomic%. A semiconductor device. The semiconductor device according to claim 1,
The difference between the peak of the germanium concentration of the silicon germanium film and the germanium concentration of the silicon germanium film in the vicinity of the interface between the silicon germanium film and the silicon film is in the range of 5 to 10 atomic%. A semiconductor device. The semiconductor device according to claim 1,
The ratio of the maximum concentration peak of the germanium concentration of the silicon germanium film to the germanium concentration of the silicon germanium film in the vicinity of the interface between the silicon germanium film and the silicon film is in the range of 1.02 to 9.0. There is a semiconductor device. The semiconductor device according to claim 1,
The ratio of the maximum concentration peak of the germanium concentration of the silicon germanium film to the germanium concentration of the silicon germanium film in the vicinity of the interface between the silicon germanium film and the silicon film is within a range of 1.1 to 3.0. There is a semiconductor device. The semiconductor device according to claim 1,
The ratio of the maximum concentration peak of the germanium concentration of the silicon germanium film to the germanium concentration of the silicon germanium film in the vicinity of the interface between the silicon germanium film and the silicon film is in the range of 1.2 to 1.7. There is a semiconductor device. Preparing a semiconductor substrate;
Epitaxially growing a silicon germanium film on the semiconductor substrate;
Epitaxially growing a silicon film on the silicon germanium film;
Have
The semiconductor device is characterized in that the germanium concentration distribution in the thickness direction of the silicon germanium film is formed by controlling a gas flow rate containing germanium so as to have a maximum concentration peak in an intermediate region in the thickness direction of the silicon germanium film. Manufacturing method. The method of manufacturing a semiconductor device according to claim 11.
Further comprising forming a silicon film on the semiconductor substrate before forming the silicon germanium film;
The method of manufacturing a semiconductor device, wherein the silicon germanium film is formed on the semiconductor substrate after the silicon film is formed. The method of manufacturing a semiconductor device according to claim 11.
The germanium concentration distribution in the thickness direction of the silicon germanium film increases in the direction from the vicinity of the interface on the semiconductor substrate side toward the inside of the silicon germanium film, and after having the peak in the intermediate region, the silicon film side A method of manufacturing a semiconductor device, comprising: forming a gas containing germanium by controlling a flow rate so as to decrease once in a direction toward the interface of the silicon film and thereafter to be substantially constant up to the interface on the silicon film side. The method of manufacturing a semiconductor device according to claim 11.
The germanium concentration of the silicon germanium film in the vicinity of the interface between the silicon germanium film and the silicon film is formed by controlling the gas flow rate including germanium so that the germanium concentration is in the range of 5 to 40 atomic%. A method for manufacturing a semiconductor device. The method of manufacturing a semiconductor device according to claim 11.
The difference between the peak of germanium concentration of the silicon germanium film and the germanium concentration of the silicon germanium film in the vicinity of the interface between the silicon germanium film and the silicon film is in the range of 1 to 40 atomic%. A method for manufacturing a semiconductor device, comprising: controlling a gas flow rate including: The method of manufacturing a semiconductor device according to claim 11.
The difference between the peak of the germanium concentration of the silicon germanium film and the germanium concentration of the silicon germanium film in the vicinity of the interface between the silicon germanium film and the silicon film is in the range of 3 to 20 atomic%. A method for manufacturing a semiconductor device, comprising: controlling a gas flow rate including: The method of manufacturing a semiconductor device according to claim 11.
The difference between the peak of the germanium concentration of the silicon germanium film and the germanium concentration of the silicon germanium film in the vicinity of the interface between the silicon germanium film and the silicon film is in the range of 5 to 10 atomic%. A method for manufacturing a semiconductor device, comprising: controlling a gas flow rate including: The method of manufacturing a semiconductor device according to claim 11.
The ratio of the peak of the germanium concentration of the silicon germanium film to the germanium concentration of the silicon germanium film in the vicinity of the interface between the silicon germanium film and the silicon film is in the range of 1.02 to 9.0. A method for manufacturing a semiconductor device, comprising forming a gas containing germanium by controlling a flow rate of gas. The method of manufacturing a semiconductor device according to claim 11.
The ratio of the peak of the germanium concentration of the silicon germanium film to the germanium concentration of the silicon germanium film in the vicinity of the interface between the silicon germanium film and the silicon film is in the range of 1.1 to 3.0. A method for manufacturing a semiconductor device, comprising forming a gas containing germanium by controlling a flow rate of gas. The method of manufacturing a semiconductor device according to claim 11.
The ratio of the peak of the germanium concentration of the silicon germanium film to the germanium concentration of the silicon germanium film in the vicinity of the interface between the silicon germanium film and the silicon film is in the range of 1.2 to 1.7. A method for manufacturing a semiconductor device, comprising forming a gas containing germanium by controlling a flow rate of gas.

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