JP2007027296A - Method of manufacturing molded circuit component - Google Patents

Method of manufacturing molded circuit component Download PDF

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JP2007027296A
JP2007027296A JP2005205222A JP2005205222A JP2007027296A JP 2007027296 A JP2007027296 A JP 2007027296A JP 2005205222 A JP2005205222 A JP 2005205222A JP 2005205222 A JP2005205222 A JP 2005205222A JP 2007027296 A JP2007027296 A JP 2007027296A
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circuit
substrate
molding
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molded
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Tetsuo Yumoto
哲男 湯本
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Sankyo Kasei Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To save resources by making a catalyst adhere only to the surface of plating deposit. <P>SOLUTION: (A) When a primary molded substrate 1 as a circuit forming body is molded by using a thermoplastic crystal material at a low mold temperature, it is quenched and crystallized at a low temperature. (B) The surfaces 1a and 1b are exposed on which a conductive layer of the primary molded substrate 1 is to be formed, and the other parts than them are covered with a circuit non-forming body 2 made of the same material as the material of the primary molded substrate 1, so as to form a secondary molded substrate 3. Molding temperature for injection-molding the circuit non-forming body 2 is sufficiently high to cause the circuit non-forming body to crystallize at high temperatures. (C) When the secondary molded body 3 is etched, its surface is roughened, and the surface of the circuit non-forming body 2 is not roughened. (D) A catalyst C is applied to the surface of the secondary molded substrate 3, and (E) conductive layers 4a and 4b are formed by electroless plating. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、熱可塑性結晶材料からなる電気絶縁性の一次成形基体または二次成形基体に導電性材料からなる所定の回路パターンの導電層を形成する成形回路部品の製造方法に関する。   The present invention relates to a method for manufacturing a molded circuit component in which a conductive layer having a predetermined circuit pattern made of a conductive material is formed on an electrically insulating primary molded substrate or a secondary molded substrate made of a thermoplastic crystal material.

従来から、表面上に回路パターンを形成した成形回路部品の製造方法には、無電解めっき用触媒を混入した素材と、混入しない素材とからなる2つの熱可塑性樹脂を使用したものが知られている。その第1の例は、無電解金属めっきのための非絶縁性触媒を含む無定形の熱可塑性樹脂コンパウンドを使って1つの第1絶縁形状を形成し、結晶性の熱可塑性樹脂コンパウンドを使って第2絶縁形状を前記第1絶縁形状の周りに形成して、表面に前記第2絶縁形状に囲まれた前記第1絶縁形状から所定領域を露出させた一体物品をつくり、この第1絶縁形状の露出部分に無電解金属めっきするものがある(特許文献1)。第2の例としては、無電解めっき触媒を混入したプラスチックからなる金属めっきが付着し易い第1の材料と、無電解めっき触媒を混入しないプラスチックからなる金属めっきがし難い第2の材料とから形成された基礎成形品において、前記第1の材料の表面に金属めっき処理したものがある(特許文献2)。
特許第2592243号公報 特許第3004689号公報
Conventionally, a method for manufacturing a molded circuit component having a circuit pattern formed on its surface uses two thermoplastic resins consisting of a material mixed with an electroless plating catalyst and a material not mixed. Yes. The first example is that an amorphous thermoplastic compound containing a non-insulating catalyst for electroless metal plating is used to form one first insulating shape, and a crystalline thermoplastic resin compound is used. A second insulating shape is formed around the first insulating shape, and an integrated article having a predetermined region exposed from the first insulating shape surrounded by the second insulating shape on the surface is formed. There is one in which an electroless metal plating is performed on the exposed portion of (Patent Document 1). As a second example, there are a first material that is easily attached with metal plating made of plastic mixed with an electroless plating catalyst, and a second material that is hard to make metal plating made of plastic without mixing an electroless plating catalyst. Among the formed basic molded articles, there is one in which the surface of the first material is subjected to metal plating (Patent Document 2).
Japanese Patent No. 2592243 Japanese Patent No. 3004689

解決しようとする問題点は、前記した2つの従来例はいずれも、無電解めっきが施される側の材料として、めっき用触媒を混入されているものが使用されている。しかし、この触媒はパラジウム、金などの稀少金属であって、このような高価な触媒を混入するのはコストの点で割高になる。触媒はめっきを析出させるものであって、製品内部まで存在する必要はなく、めっきが施される表面にあれば、それで必要にして十分である。   The problem to be solved is that both of the above two conventional examples use a material in which a plating catalyst is mixed as a material on which electroless plating is performed. However, this catalyst is a rare metal such as palladium or gold, and mixing such an expensive catalyst is expensive in terms of cost. The catalyst deposits the plating and does not need to exist in the interior of the product. If it is on the surface to be plated, it is sufficient if necessary.

そこで、本発明の目的はめっき析出表面にのみ触媒を付着させることにより省資源化できる成形回路部品の製造方法を提供することにある。   Accordingly, an object of the present invention is to provide a method of manufacturing a molded circuit component that can save resources by attaching a catalyst only to a plating deposition surface.

この発明の開発の背景として、熱可塑性結晶材料、例えばシンジオタチックポリスチレン樹脂(SPS)は、射出成形時において、溶融状態で成形金型内に射出され、冷却固化する過程で、低温の金型で急速冷却して固化した場合と、高温の金型で低速固化した場合との結晶化度率の差が大きいことに着目したことに始まる。そして、熱可塑性結晶材料は、結晶化度が高ければ高い程、つまり高結晶化(完全結晶化)領域では耐薬品性が高く、ケミカルアタック性に強い性質がある。逆に、非結晶化領域から低結晶化領域では耐薬品性が低く、ケミカルアタック性に弱い性質がある。   As a background of the development of the present invention, a thermoplastic crystal material, such as syndiotactic polystyrene resin (SPS), is injected into a molding die in a molten state at the time of injection molding, and in the process of cooling and solidifying, a low temperature die It begins with paying attention to the large difference in crystallinity rate between the case of solidification by rapid cooling and the case of low-speed solidification with a high-temperature mold. The higher the crystallinity of the thermoplastic crystal material, that is, the higher the chemical resistance in the highly crystallized (completely crystallized) region, and the stronger the chemical attack property. On the contrary, in the non-crystallized region to the low crystallized region, the chemical resistance is low and the chemical attack property is weak.

本発明の最大の特徴は、熱可塑性結晶材料の前記のような性質を利用して、同系の材料を使用しながら、射出成形の金型温度を変えて二回成形により成形するとき、回路形成体側の基体を低結晶させるに必要な限度の低温で成形し、回路非形成体側の基体を高結晶化させるに必要な高温で成形するところにある。そのため、低結晶化した部材のスキン層は、エッチング処理により粗面化するが、高結晶化した部材のスキン層は粗面化しない。この粗面化した面にプラスチック無電解プロセスによりめっきで回路パターンを形成するものである。そして、前記のように同系の熱可塑性結晶材料を使用しているので、回路形成体と回路非形成体の界面の相溶性がよく、めっきプロセスにおけるエッチング液などが境界面に進入することがなく、そのため信頼性の高い成形回路部品が製造できる。   The greatest feature of the present invention is that the above-mentioned properties of the thermoplastic crystal material are utilized to form a circuit when molding by twice molding while changing the mold temperature of the injection molding while using a similar material. The substrate on the body side is molded at a low temperature necessary for low crystallization, and the substrate on the non-circuit-formed body side is molded at a high temperature necessary for high crystallization. Therefore, the skin layer of the low-crystallized member is roughened by the etching process, but the skin layer of the highly crystallized member is not roughened. A circuit pattern is formed on the roughened surface by plating using a plastic electroless process. Since the same thermoplastic crystal material is used as described above, the interface between the circuit formed body and the circuit non-formed body is compatible, and the etching solution in the plating process does not enter the interface. Therefore, a highly reliable molded circuit component can be manufactured.

本発明に係る成形回路部品の製造方法の第1の特徴は、熱可塑性結晶材料を射出成形により電気絶縁性で所定形状の回路形成体である一次成形基体(1)を形成する工程と、上記一次成形基体の表面のうち、所定の回路パターンの導電層が形成されるべき表面部分(1a,1b)を露出させ、それ以外の部分を電気絶縁性の回路非形成体(2)で被覆するもので、この回路非形成体は、前記一次成形基体の素材と同系の熱可塑性結晶材料を素材とするものであって、この回路非形成体を射出成形することにより上記一次成形基体と一体的に形成してなる二次成形基体(3)を形成する工程と、上記一次成形基体(1)の上記回路パターンの導電層(4a,4b)が形成される表面部分に、エッチング工程を含むプラスチック無電解めっきプロセスにより導電性材料により導電層を形成する工程とを含むものであって、上記一次成形基体(1)の成形条件として、金型温度をこの一次成形基体のスキン層を低結晶化させるに必要な限度の低温に設定し、上記回路非形成体(2)の成形条件として、金型温度をこの回路非形成体のスキン層を高結晶化させるに十分な高温に設定してあるところにある。   A first feature of the method for producing a molded circuit component according to the present invention is that a thermoplastic crystal material is formed by injection molding to form a primary molded substrate (1) which is an electrically insulating and predetermined circuit formed body, Of the surface of the primary molded substrate, the surface portions (1a, 1b) on which the conductive layer of the predetermined circuit pattern is to be formed are exposed, and the other portions are covered with the electrically insulating circuit non-former (2). The circuit non-formed body is made of a thermoplastic crystal material similar to the material of the primary molded base, and the circuit non-formed body is integrated with the primary molded base by injection molding. A plastic including an etching step on a surface portion of the primary molding substrate (1) on which the conductive layers (4a, 4b) of the circuit pattern are formed; Conductive layer is formed of conductive material by electroless plating process The molding temperature of the primary molding substrate (1) is set as a molding temperature of the limit necessary for low crystallization of the skin layer of the primary molding substrate. The molding condition of the non-circuit formed body (2) is that the mold temperature is set to a high enough temperature to cause the skin layer of the non-circuit formed body to be highly crystallized.

そして、前記熱可塑性結晶材料とは、ポリエチレンテレフタレート(PET)、ポリブチレンテレフタレート(PBT)、ポリアミド(PA)、ポリエーテルイミド(PI)、シンジオタチックポリスチレン(SPS)、ポニフェニレンサルファイド(PPS)、ポリプロピレン(PP)、ポリエチレン(PE)、ポリエーテルエーテルケトン(PEEK)、ポリオキシメチレン(POM)から選択された少なくとも1つの材料からなるものである。   The thermoplastic crystal material includes polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyamide (PA), polyetherimide (PI), syndiotactic polystyrene (SPS), poniphenylene sulfide (PPS), It consists of at least one material selected from polypropylene (PP), polyethylene (PE), polyetheretherketone (PEEK), and polyoxymethylene (POM).

前記した回路非形成体が、一次成形基体の素材と同系の熱可塑性結晶材料を素材とするという、この同系とは、この回路形成体と一次成形基体とが、相互の界面の相溶性により、より強く一体化するためのものである。   The circuit non-former described above is made of a thermoplastic crystal material similar to the material of the primary molding substrate, and this same system is the compatibility between the circuit molded body and the primary molding substrate, It is for stronger integration.

本発明の第2の特徴は、熱可塑性結晶材料を射出成形により電気絶縁性で所定形状の回路非形成体である一次成形基体(20)を形成する工程と、上記一次成形基体の表面のうち、所定の回路パターンの導電層が形成されるべき部分に、前記一次成形基体の素材と同系の熱可塑性結晶材料を射出成形することによりこの一次成形基体と一体的に電気絶縁性の回路形成体(10)を形成してなる二次成形基体(30)を形成する工程と、上記二次成形基体(30)の上記回路パターンの導電層が形成される上記回路形成体の表面部分に、エッチング工程を含むプラスチック無電解めっきプロセスにより導電性材料により導電層(40a,40b,40c)を形成する工程とを含むものであって、上記回路非形成体である一次成形基体(20)の成形条件として、金型温度をこの一次成形基体のスキン層を高結晶化させるに十分な高温に設定してあり、上記二次成形基体(30)の回路形成体(10)の成形条件として、金型温度をこの回路形成体のスキン層を低結晶化させるに必要な限度の低温に設定してあるところにある。   The second feature of the present invention is that a thermoplastic crystalline material is formed by injection molding to form a primary molded substrate (20) which is an electrically insulating and non-formed circuit having a predetermined shape, and among the surfaces of the primary molded substrate, An electrically insulating circuit forming body integrally formed with the primary molding substrate by injection-molding a thermoplastic crystal material similar to the material of the primary molding substrate in a portion where a conductive layer having a predetermined circuit pattern is to be formed (10) forming a secondary molded substrate (30), and etching the surface portion of the circuit formed body on which the conductive layer of the circuit pattern of the secondary molded substrate (30) is formed. Forming a conductive layer (40a, 40b, 40c) with a conductive material by a plastic electroless plating process including a step, and forming conditions of the primary molded substrate (20) that is the circuit non-former As the mold temperature of this primary molding substrate The quin layer is set at a sufficiently high temperature for high crystallization, and as a molding condition of the circuit forming body (10) of the secondary forming substrate (30), the mold temperature is set to be low for the skin layer of the circuit forming body. The temperature is set to the low temperature necessary for crystallization.

第3の特徴は、前記第2の特徴において、上記一次成形基体(20)には貫通孔(20a)が形成してあり、上記二次成形基体(30)の少なくとも上下面に導電層(40b,40c)が形成されているところにある。   A third feature is that, in the second feature, a through hole (20a) is formed in the primary molded substrate (20), and a conductive layer (40b) is formed on at least the upper and lower surfaces of the secondary molded substrate (30). 40c) is formed.

本発明の効果として、めっき析出表面のみに触媒を付与させるため省資源化でき、回路形成体と回路非形成体とが、同系の熱可塑性結晶材料により一体的に射出成形してあるため、相互の界面の相溶性がよく、エッチング液、めっき液が相互間に進入することがないので信頼性の高い品質が得られる。さらに、前記の回路形成体と回路非形成体相互の界面に、触媒が介在せず、これら回路形成体や回路非形成体の内部にも触媒が混在しないため高い電気絶縁性が確保される。エッチング工程により粗面化した回路形成体には金属めっきにより回路パターンが形成されるが、この金属めっきは粗面化した面とアンカー効果(投錨効果)により強く接着する。また、非回路面のスキン層は高結晶化されているため、エッチング工程において粗面化されず、疎水性で水分が付着し難いので高い信頼性が確保できる。   As an effect of the present invention, it is possible to save resources because the catalyst is imparted only to the plating deposition surface, and the circuit formed body and the circuit non-formed body are integrally injection-molded with a similar thermoplastic crystal material, The interface has good compatibility, and the etching solution and the plating solution do not enter between each other, so that reliable quality can be obtained. Further, since no catalyst is present at the interface between the circuit forming body and the circuit non-forming body, and no catalyst is mixed inside the circuit forming body or the circuit non-forming body, high electrical insulation is ensured. A circuit pattern is formed on the circuit formed body roughened by the etching process by metal plating, and this metal plating strongly adheres to the roughened surface by an anchor effect (throwing effect). Further, since the skin layer on the non-circuit surface is highly crystallized, it is not roughened in the etching process, and is hydrophobic and moisture hardly adheres, so that high reliability can be ensured.

以下、図1を参照して本発明の第1の実施の形態を説明する。
図1(A)に示すように、熱可塑性結晶材料を射出成形により電気絶縁性で所定形状の回路形成体である一次成形基体1を形成する。この熱可塑性結晶材料としては、ポリエチレンテレフタレート(PET)、ポリブチレンテレフタレート(PBT)、ポリアミド(PA)、ポリエーテルイミド(PI)、シンジオタチックポリスチレン(SPS)、ポニフェニレンサルファイド(PPS)、ポリプロピレン(PP)、ポリエチレン(PE)、ポリエーテルエーテルケトン(PEEK)、ポリオキシメチレン(POM)から適宜選択された少なくとも1つの材料からなるものである。なお、この熱可塑性結晶材料の剛性を高めるため、ガラス繊維、チタン酸カリウムウイスカ、チタン酸ストロンチウムウイスカ、チタン酸バリウムウイスカなどの充填材を含んだものでもよい。また、耐衝撃性を高める為、ブタジェン、各種エラストマー成分を充填してもよい。
Hereinafter, a first embodiment of the present invention will be described with reference to FIG.
As shown in FIG. 1A, a primary molded substrate 1 which is a circuit forming body having a predetermined shape and an electric insulation is formed by injection molding of a thermoplastic crystal material. Examples of the thermoplastic crystal material include polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyamide (PA), polyetherimide (PI), syndiotactic polystyrene (SPS), poniphenylene sulfide (PPS), polypropylene ( It is made of at least one material appropriately selected from PP), polyethylene (PE), polyetheretherketone (PEEK), and polyoxymethylene (POM). In order to increase the rigidity of the thermoplastic crystal material, a filler such as glass fiber, potassium titanate whisker, strontium titanate whisker, or barium titanate whisker may be included. Further, butadiene and various elastomer components may be filled in order to improve impact resistance.

一次成形基体1を射出成形する場合の成形条件として、金型温度を、この一次成形基体のスキン層を低結晶化させるに必要な限度の低温に設定することが必要である。   As a molding condition in the case of injection molding the primary molding substrate 1, it is necessary to set the mold temperature to a low temperature necessary for low crystallization of the skin layer of the primary molding substrate.

熱可塑性結晶樹脂として、例えばシンジオタチックポリスチレン(SPS)樹脂、具体的な実施例として、「XAREC #S131」(出光興産株式会社の製品)を一次成形基体1の素材として使用する場合の成形条件、特に一次成形基体のスキン層を低結晶化させるに必要な限度の低温とは次の通りである。
金型温度 40℃〜60℃
シリンダー温度 280℃〜290℃
射出圧力 1000kg/cm
そのため、一次成形体1の素材の「XAREC #S131」は、溶融状態から金型温度が40℃〜60℃と低温であるため急速に冷却され、この一次成形体のスキン層の結晶化が遅れ低結晶化する。この低結晶化とは、殆ど結晶化していないもの、つまり非結晶化に近い状態のものも含む。
As thermoplastic crystal resin, for example, syndiotactic polystyrene (SPS) resin, and as a specific example, “XAREC # S131” (product of Idemitsu Kosan Co., Ltd.) is used as a material for primary molding substrate 1. Particularly, the low temperature necessary for low crystallization of the skin layer of the primary molded substrate is as follows.
Mold temperature 40 ℃ ~ 60 ℃
Cylinder temperature 280 ° C ~ 290 ° C
Injection pressure 1000kg / cm 2
Therefore, the material “XAREC # S131” of the primary molded body 1 is rapidly cooled because the mold temperature is as low as 40 ° C. to 60 ° C. from the melted state, and the crystallization of the skin layer of the primary molded body is delayed. Low crystallization. This low crystallization includes those that are hardly crystallized, that is, those that are nearly non-crystallized.

次に、図1(B)に示すように、一次成形基体1の表面のうち、所定の回路パターンの導電層(図1(E)の4a,4b参照)が形成されるべき表面部分1a,1bを露出させ、それ以外の部分を電気絶縁性の回路非形成体2で被覆するように、この回路非形成体を射出成形により一次成形基体1の素材と同系の前記した熱可塑性結晶材料により、この一次成形基体と一体的に形成し、二次成形基体3を形成する。回路非形成体2の素材が一次成形基体1の素材と同系とは、この回路非形成体の素材がこの一次成形基体と相溶性を有し、そのため、この回路形成体である一次成形体と回路非形成体2とが一体化して、二次成形基体3全体が一体化し易いものを言う。   Next, as shown in FIG. 1B, among the surface of the primary molded substrate 1, a surface portion 1a on which a conductive layer having a predetermined circuit pattern (see 4a and 4b in FIG. 1E) is to be formed. The circuit non-formed body is made of the thermoplastic crystal material similar to the material of the primary molding substrate 1 by injection molding so that 1b is exposed and the other part is covered with the electrically insulating circuit non-formed body 2. The secondary molded base 3 is formed integrally with the primary molded base. The material of the circuit non-formed body 2 is the same as the material of the primary molded base 1. The material of the circuit non-formed body has compatibility with the primary molded base, and therefore, the primary molded body that is the circuit formed body and This means that the non-circuit-formed body 2 is integrated and the secondary molded base 3 as a whole is easily integrated.

この二次成形基体3の構成部分の回路非形成体2を射出成形する場合の成形条件、特に金型温度を、この回路非形成体のスキン層を高結晶化させるに十分な高温に設定することが必要である。   The molding conditions in the case of injection molding of the non-circuit formed body 2 of the constituent parts of the secondary molded base 3, especially the mold temperature, are set to a high enough temperature to make the skin layer of the non-circuit formed body highly crystallized. It is necessary.

熱可塑性結晶樹脂として、例えばシンジオタチックポリスチレン(SPS)樹脂、具体的な実施例として、「XAREC #S120」(出光興産株式会社の製品)を回路非形成体2の素材として使用する場合の成形条件、特に金型の温度について、回路非形成体2のスキン層を高結晶化させるに十分な高温とは次の通りである。
金型温度 140℃〜160℃
シリンダー温度 280℃〜290℃
射出圧力 800kg/cm
このように、回路非形成体2を射出成形する時の金型温度が140℃〜160℃と高温であるため、この溶融状態の「XAREC #S120」を冷却するのに時間がかかるため結晶化が促進され、この回路非形成体のスキン層は高結晶化する。
Molding in the case of using, for example, syndiotactic polystyrene (SPS) resin as the thermoplastic crystal resin, and “XAREC # S120” (product of Idemitsu Kosan Co., Ltd.) as a material of the circuit non-former 2 as a specific example. Regarding the conditions, particularly the temperature of the mold, the high temperature sufficient to highly crystallize the skin layer of the non-circuit-formed body 2 is as follows.
Mold temperature 140 ℃ ~ 160 ℃
Cylinder temperature 280 ° C ~ 290 ° C
Injection pressure 800kg / cm 2
As described above, since the mold temperature at the time of injection molding of the non-circuit-formed body 2 is as high as 140 ° C. to 160 ° C., it takes time to cool the melted “XAREC # S120”. Is promoted, and the skin layer of the non-circuit formed body is highly crystallized.

次に、一次成形基体1の回路パターンの導電層が形成される表面部分1a,1bに、プラスチック無電解めっきプロセスにより導電性材料により導電層を形成する工程について説明する。   Next, a process of forming a conductive layer with a conductive material by a plastic electroless plating process on the surface portions 1a and 1b where the conductive layer of the circuit pattern of the primary molded substrate 1 is formed will be described.

先ず、図1(C)に示すように、二次成形体3を脱脂し、その表面を粗面化、つまりエッチング処理する。このエッチング処理の例としては、クロム硫酸液を所定濃度、例えば六価クロムCrOを430g/l、硫酸HSO(98%)を320cc/lとし、所定温度、例えば65℃に加熱し、二次成形体3を所定時間、例えば30分浸漬して行う。このエッチング処理により回路非形成体2から露出している一次成形体1の表面部分1a,1bは低結晶化しているためエッチングEされて粗面化するが、回路非形成体2の表面は高結晶化しているので粗面化しない。 First, as shown in FIG. 1C, the secondary molded body 3 is degreased and its surface is roughened, that is, etched. As an example of this etching process, a chromium sulfuric acid solution is set to a predetermined concentration, for example, hexavalent chromium CrO 3 is 430 g / l, sulfuric acid H 2 SO 4 (98%) is 320 cc / l, and heated to a predetermined temperature, for example, 65 ° C. The secondary molded body 3 is immersed for a predetermined time, for example, 30 minutes. By this etching process, the surface portions 1a and 1b of the primary molded body 1 exposed from the circuit non-formed body 2 are low-crystallized and etched to roughen the surface, but the surface of the circuit non-formed body 2 is high. Since it is crystallized, it does not roughen.

次に、図1(D)に示すように、一次成形基体1の表面部分1a,1bを含む二次成形基体3の表面にパラジウム、金などによる触媒Cを付与する。この触媒付与処理は、公知のものであるが、例えば、錫、パラジウム系の混合触媒液に二次成形基体3を浸漬した後、塩酸、硫酸などの酸で活性化し、表面にパラジウムを析出させる。または、塩化第1錫などの比較的強い還元剤を表面に吸着させ、金などの貴金属イオンを含む触媒溶液に浸漬し、表面に金を析出させる。この触媒溶液の温度は15〜23℃で、5分間浸漬すればよい。   Next, as shown in FIG. 1D, a catalyst C made of palladium, gold, or the like is applied to the surface of the secondary molded base 3 including the surface portions 1a and 1b of the primary molded base 1. This catalyst application treatment is a known one. For example, after the secondary molded substrate 3 is immersed in a mixed catalyst solution of tin and palladium, it is activated with an acid such as hydrochloric acid or sulfuric acid to deposit palladium on the surface. . Alternatively, a relatively strong reducing agent such as stannous chloride is adsorbed on the surface and immersed in a catalyst solution containing a noble metal ion such as gold to deposit gold on the surface. What is necessary is just to immerse the temperature of this catalyst solution at 15-23 degreeC for 5 minutes.

以上のような、プラスチック無電解めっき前処理プロセスを経て、図1(E)に示すように、無電解めっきにより一次成形基体1の表面部分1a,1bには、回路パターンの導電層4a,4bが形成される。   Through the plastic electroless plating pretreatment process as described above, as shown in FIG. 1 (E), the conductive layers 4a and 4b of the circuit pattern are formed on the surface portions 1a and 1b of the primary molded base 1 by electroless plating. Is formed.

次に、図2を参照して第2の実施の形態について説明する。
図2(A)に示すように、先ず、熱可塑性結晶材料を射出成形により電気絶縁性で所定形状の回路非形成体である一次成形基体20を形成する。この一次成形基体20には、上下に貫通する貫通孔20aが形成してある。この熱可塑性結晶材料は、前記第1の実施の形態においてすでに説明したものである。
回路非形成体である一次成形基体20の成形条件として、金型温度をこの一次成形基体のスキン層を高結晶化させるに十分な高温に設定してあることが必要である。
Next, a second embodiment will be described with reference to FIG.
As shown in FIG. 2A, first, a primary molded substrate 20 which is an electrically insulating and non-circuit shaped body having a predetermined shape is formed by injection molding of a thermoplastic crystal material. The primary molded base 20 is formed with a through hole 20a penetrating vertically. This thermoplastic crystal material has already been described in the first embodiment.
As a molding condition of the primary molded substrate 20 which is a non-circuited body, it is necessary that the mold temperature is set to a high enough temperature to cause the skin layer of the primary molded substrate to be highly crystallized.

熱可塑性結晶樹脂として、例えばシンジオタチックポリスチレン(SPS)樹脂、具体的な実施例として、「XAREC #S120」(出光興産株式会社の製品)を回路非形成体である一次成形基体20の素材として使用する場合の成形条件、特に金型の温度について、一次成形基体20のスキン層を高結晶化させるに十分な高温とは次の通りである。
金型温度 140℃〜160℃
シリンダー温度 280℃〜290℃
射出圧力 800kg/cm
このように、回路非形成体である一次成形基体20を射出成形する時の金型温度が140℃〜160℃と高温であるため、この溶融状態の「XAREC #S120」を冷却するのに時間がかかるため結晶化が促進され、この回路非形成体のスキン層は高結晶化する。
As a thermoplastic crystal resin, for example, syndiotactic polystyrene (SPS) resin, and as a specific example, “XAREC # S120” (product of Idemitsu Kosan Co., Ltd.) is used as a material for the primary molded substrate 20 which is a circuit non-former. Regarding the molding conditions when used, particularly the temperature of the mold, the high temperature sufficient to highly crystallize the skin layer of the primary molding substrate 20 is as follows.
Mold temperature 140 ℃ ~ 160 ℃
Cylinder temperature 280 ° C ~ 290 ° C
Injection pressure 800kg / cm 2
As described above, since the mold temperature at the time of injection molding the primary molded base body 20 which is a non-circuited body is as high as 140 ° C. to 160 ° C., it takes time to cool the molten “XAREC # S120”. Therefore, crystallization is promoted, and the skin layer of the non-circuit formed body is highly crystallized.

次に、図2(B)に示すように、一次成形基体20の表面のうち、所定の回路パターンの導電層(図2(E)の40a,40b,40c参照)が形成されるべき部分に、一次成形基体20の素材と同系の熱可塑性結晶材料を射出成形により、この一次成形基体と一体的に電気絶縁性の回路形成体10を具備する二次成形基体30を形成する。また、回路形成体10を射出成形するとき、貫通孔20aにより熱可塑性結晶材料は上下両面に分配され、この回路形成体10は二次成形基体30の上面に2箇所、下面に1箇所露出している。   Next, as shown in FIG. 2B, a portion of the surface of the primary molded base 20 where a conductive layer having a predetermined circuit pattern (see 40a, 40b, and 40c in FIG. 2E) is to be formed. Then, a thermoplastic crystal material similar to the material of the primary molding substrate 20 is injection-molded to form a secondary molding substrate 30 including the electrically insulating circuit forming body 10 integrally with the primary molding substrate. Further, when the circuit formed body 10 is injection-molded, the thermoplastic crystal material is distributed to the upper and lower surfaces through the through-holes 20a, and the circuit formed body 10 is exposed at two locations on the upper surface of the secondary molded substrate 30 and at one location on the lower surface. ing.

二次成形基体30の回路形成体10の成形条件として、金型温度をこの回路形成体のスキン層を低結晶化させるに必要な限度の低温に設定してある。   As a molding condition of the circuit-formed body 10 of the secondary molded body 30, the mold temperature is set to a low temperature necessary for low crystallization of the skin layer of the circuit-formed body.

熱可塑性結晶樹脂として、例えばシンジオタチックポリスチレン(SPS)樹脂、具体的な実施例として、「XAREC #S131」(出光興産株式会社の製品)を回路形成体10の素材として使用する場合の成形条件、特にこの回路形成体のスキン層を低結晶化させるに必要な限度の低温とは次の通りである。
金型温度 40℃〜60℃
シリンダー温度 280℃〜290℃
射出圧力 1000kg/cm
そのため、回路形成体10の素材の溶融状態の「XAREC #S131」は、金型温度が40℃〜60℃と低温であるため急速に冷却され、この一次成形体のスキン層の結晶化が遅れ低結晶化する。この低結晶化とは、殆ど結晶化していないもの、つまり非結晶化に近い状態のものも含む。
As thermoplastic crystal resin, for example, syndiotactic polystyrene (SPS) resin, and as a specific example, “XAREC # S131” (product of Idemitsu Kosan Co., Ltd.) is used as a material for circuit forming body 10. Particularly, the low temperature necessary for low crystallization of the skin layer of this circuit formed body is as follows.
Mold temperature 40 ℃ ~ 60 ℃
Cylinder temperature 280 ° C ~ 290 ° C
Injection pressure 1000kg / cm 2
Therefore, “XAREC # S131” in the molten state of the material of the circuit formed body 10 is rapidly cooled because the mold temperature is as low as 40 ° C. to 60 ° C., and the crystallization of the skin layer of this primary molded body is delayed. Low crystallization. This low crystallization includes those that are hardly crystallized, that is, those that are nearly non-crystallized.

次に、二次成形基体30の回路パターンの導電層が形成される回路形成体10の表面部分10a,10b,10cにエッチング工程を含むプラスチック無電解めっきプロセスにより導電性材料により導電層を形成する工程について説明する。なお、表面部分10b,10cは貫通孔20aに充填された「XAREC #S131」により連結している。   Next, a conductive layer is formed of a conductive material by a plastic electroless plating process including an etching step on the surface portions 10a, 10b, and 10c of the circuit forming body 10 on which the conductive layer of the circuit pattern of the secondary molded body 30 is formed. The process will be described. The surface portions 10b and 10c are connected by “XAREC # S131” filled in the through hole 20a.

先ず、図2(C)に示すように、二次成形基体30を脱脂し、その表面を粗面化、つまりエッチング処理する。このエッチング処理の例としては、クロム硫酸液を所定濃度、例えば六価クロムCrOを430g/l、硫酸HSO(98%)を320cc/lとし、所定温度、例えば65℃に加熱し、二次成形基体30を所定時間、例えば30分浸漬して行う。このエッチング処理により回路非形成体である一次成形基体20から露出している回路形成体10の表面部分10a,10b,10cは低結晶化しているためエッチングEaされて粗面化するが、回路非形成体である一次成形基体20の表面は高結晶化しているので粗面化しない。 First, as shown in FIG. 2C, the secondary molded substrate 30 is degreased and its surface is roughened, that is, etched. As an example of this etching process, a chromium sulfuric acid solution is set to a predetermined concentration, for example, hexavalent chromium CrO 3 is 430 g / l, sulfuric acid H 2 SO 4 (98%) is 320 cc / l, and heated to a predetermined temperature, for example, 65 ° C. The secondary molding substrate 30 is immersed for a predetermined time, for example, 30 minutes. By this etching process, the surface portions 10a, 10b, and 10c of the circuit formed body 10 that are exposed from the primary molded base body 20 that is a circuit non-formed body are low crystallized, so that they are etched and roughened. Since the surface of the primary molded substrate 20 as a formed body is highly crystallized, it is not roughened.

次に、図2(D)に示すように、回路形成体10の表面部分10a,10b,10cを含む二次成形基体30の表面にパラジウム、金などによる触媒Caを付与する。この触媒付与処理は、公知のものであるが、例えば、錫、パラジウム系の混合触媒液に二次成形基体30を浸漬した後、塩酸、硫酸などの酸で活性化し、表面にパラジウムを析出させる。または、塩化第1錫などの比較的強い還元剤を表面に吸着させ、金などの貴金属イオンを含む触媒溶液に浸漬し、表面に金を析出させる。この触媒溶液の温度は15〜23℃で、5分間浸漬すればよい。   Next, as shown in FIG. 2D, a catalyst Ca made of palladium, gold, or the like is applied to the surface of the secondary molded substrate 30 including the surface portions 10a, 10b, and 10c of the circuit formed body 10. This catalyst application treatment is a known one. For example, after the secondary molding substrate 30 is immersed in a mixed catalyst solution of tin and palladium, the catalyst is activated with an acid such as hydrochloric acid or sulfuric acid to deposit palladium on the surface. . Alternatively, a relatively strong reducing agent such as stannous chloride is adsorbed on the surface and immersed in a catalyst solution containing a noble metal ion such as gold to deposit gold on the surface. What is necessary is just to immerse the temperature of this catalyst solution at 15-23 degreeC for 5 minutes.

以上のような、プラスチック無電解めっき前処理プロセスを経て、図2(E)に示すように、無電解めっきにより回路形成体10の表面部分10a,10b,10cには、回路パターンの導電層40a,40b,40cが形成される。   After the plastic electroless plating pretreatment process as described above, as shown in FIG. 2E, the surface portions 10a, 10b, and 10c of the circuit formed body 10 are formed on the surface portions 10a, 10b, and 10c of the circuit pattern 10 by electroless plating. , 40b, 40c are formed.

この実施の形態では、二次成形基体30の表面において2箇所以上の導電層40a,40b,40c、つまり回路パターンの導電層が形成され、この導電層を連結する流路を一次成形基体20の内部に設けることができる。導電層40b,40cが回路形成体10で連結していても、この回路形成体は電気絶縁性であるので短絡することはない。したがって、二次成形基体30の表面ばかりでなく、裏面、側面に回路パターンを形成するのに、貫通孔20aにより熱可塑性結晶材料を分配できる。   In this embodiment, two or more conductive layers 40 a, 40 b, 40 c, that is, conductive layers having a circuit pattern are formed on the surface of the secondary molded substrate 30, and the flow path connecting the conductive layers is formed on the primary molded substrate 20. It can be provided inside. Even if the conductive layers 40b and 40c are connected by the circuit forming body 10, since the circuit forming body is electrically insulating, there is no short circuit. Therefore, the thermoplastic crystal material can be distributed through the through-holes 20a to form circuit patterns not only on the surface of the secondary molded substrate 30, but also on the back surface and side surfaces.

発明の活用例として、電子回路の三次元化、または、携帯電話の内蔵アンテナのエレメント形成の技術開発などに利用できる。   As an application example of the invention, the present invention can be used for three-dimensional electronic circuit or technology development for element formation of a built-in antenna of a mobile phone.

第1の実施の形態の各製造工程を示すもので、(A)は回路形成体である一次成形基体の成形工程、(B)は二次成形基体の成形工程、(C)はエッチング工程、(D)は触媒付与工程、(E)は導電層成形工程である。The manufacturing process of 1st Embodiment is shown, (A) is the shaping | molding process of the primary shaping | molding base | substrate which is a circuit formation body, (B) is a shaping | molding process of a secondary shaping | molding base | substrate, (C) is an etching process, (D) is a catalyst providing step, and (E) is a conductive layer forming step. 第2の実施の形態の各製造工程を示すもので、(A)は回路非形成体である一次成形基体の成形工程、(B)は二次成形基体の成形工程、(C)はエッチング工程、(D)は触媒付与工程、(E)は導電層成形工程である。The manufacturing process of 2nd Embodiment is shown, (A) is the shaping | molding process of the primary shaping | molding base | substrate which is a circuit non-formation body, (B) is a shaping | molding process of a secondary shaping | molding base | substrate, (C) is an etching process. , (D) is a catalyst application step, and (E) is a conductive layer forming step.

符号の説明Explanation of symbols

1 回路形成体である一次成形基体
1a,1b 表面部分
2 回路非形成体
3 二次成形基体
4a,4b 導電層
20 回路非形成体である一次成形基体
20a 貫通孔
10 回路形成体
30 二次成形基体
40a,40b,40c 導電層
DESCRIPTION OF SYMBOLS 1 Primary shaping | molding base | substrate 1a, 1b surface part 2 Circuit non-formation body 3 Secondary shaping | molding base | substrate 4a, 4b Conductive layer 20 Primary shaping | molding base | substrate 20a through-hole 10 Circuit formation body 30 Secondary shaping | molding which is a circuit non-formation body Base 40a, 40b, 40c Conductive layer

Claims (3)

熱可塑性結晶材料を射出成形により電気絶縁性で所定形状の回路形成体である一次成形基体(1)を形成する工程と、
上記一次成形基体の表面のうち、所定の回路パターンの導電層が形成されるべき表面部分(1a,1b)を露出させ、それ以外の部分を電気絶縁性の回路非形成体(2)で被覆するもので、この回路非形成体は、前記一次成形基体の素材と同系の熱可塑性結晶材料を素材とするものであって、この回路非形成体を射出成形することにより上記一次成形基体と一体的に形成してなる二次成形基体(3)を形成する工程と、
上記一次成形基体(1)の上記回路パターンの導電層(4a,4b)が形成される表面部分に、エッチング工程を含むプラスチック無電解めっきプロセスにより導電性材料により導電層を形成する工程とを含むものであって、
上記一次成形基体(1)の成形条件として、金型温度をこの一次成形基体のスキン層を低結晶化させるに必要な限度の低温に設定し、
上記回路非形成体(2)の成形条件として、金型温度をこの回路非形成体のスキン層を高結晶化させるに十分な高温に設定してある
ことを特徴とする成形回路部品の製造方法。
Forming a primary molded substrate (1), which is an electrically insulating and predetermined-shaped circuit formed body by injection molding of a thermoplastic crystal material; and
Of the surface of the primary molding substrate, the surface portions (1a, 1b) on which the conductive layer having a predetermined circuit pattern is to be formed are exposed, and the other portions are covered with an electrically insulating circuit non-former (2). The non-circuit formed body is made of a thermoplastic crystal material similar to the material of the primary molded base, and the non-circuit formed body is integrated with the primary molded base by injection molding. Forming a secondary molded substrate (3) formed by
Forming a conductive layer with a conductive material by a plastic electroless plating process including an etching step on a surface portion of the primary molded substrate (1) where the conductive layer (4a, 4b) of the circuit pattern is formed. And
As a molding condition of the primary molded substrate (1), the mold temperature is set to a low temperature necessary for low crystallization of the skin layer of the primary molded substrate,
A method for producing a molded circuit component, characterized in that, as a molding condition of the non-circuit-formed body (2), the mold temperature is set to a high enough temperature to cause the skin layer of the non-circuit-formed body to be highly crystallized. .
熱可塑性結晶材料を射出成形により電気絶縁性で所定形状の回路非形成体である一次成形基体(20)を形成する工程と、
上記一次成形基体の表面のうち、所定の回路パターンの導電層が形成されるべき部分に、前記一次成形基体の素材と同系の熱可塑性結晶材料を射出成形することによりこの一次成形基体と一体的に電気絶縁性の回路形成体(10)を形成してなる二次成形基体(30)を形成する工程と、
上記二次成形基体(30)の上記回路パターンの導電層が形成される上記回路形成体の表面部分に、エッチング工程を含むプラスチック無電解めっきプロセスにより導電性材料により導電層(40a,40b,40c)を形成する工程とを含むものであって、
上記回路非形成体である一次成形基体(20)の成形条件として、金型温度をこの一次成形基体のスキン層を高結晶化させるに十分な高温に設定してあり、
上記二次成形基体(30)の回路形成体(10)の成形条件として、金型温度をこの回路形成体のスキン層を低結晶化させるに必要な限度の低温に設定してある
ことを特徴とする成形回路部品の製造方法。
Forming a primary molded substrate (20), which is an electrically insulating and non-circuit formed body having a predetermined shape, by injection molding a thermoplastic crystal material;
A thermoplastic crystal material similar to the material of the primary molding substrate is injection-molded on a portion of the surface of the primary molding substrate where a conductive layer having a predetermined circuit pattern is to be formed. Forming a secondary molded substrate (30) formed by forming an electrically insulating circuit forming body (10) on
A conductive layer (40a, 40b, 40c) is formed of a conductive material on a surface portion of the circuit-formed body on which the conductive layer of the circuit pattern of the secondary molded substrate (30) is formed by a plastic electroless plating process including an etching process. Forming a step),
As a molding condition of the primary molded substrate (20) that is the non-circuit-formed body, the mold temperature is set to a high enough temperature to highly crystallize the skin layer of the primary molded substrate,
The molding temperature of the circuit molded body (10) of the secondary molded substrate (30) is characterized in that the mold temperature is set to a low temperature necessary for low crystallization of the skin layer of the circuit molded body. A method of manufacturing a molded circuit component.
請求項2において、上記一次成形基体(20)には貫通孔(20a)が形成してあり、上記二次成形基体(30)の少なくとも上下面には導電層(40b,40c)が形成されていることを特徴とする成形回路部品の製造方法。   In Claim 2, the said primary shaping | molding base | substrate (20) has the through-hole (20a), and the electroconductive layer (40b, 40c) is formed in at least the upper and lower surfaces of the said secondary shaping | molding base | substrate (30). A method for producing a molded circuit component, comprising:
JP2005205222A 2005-07-14 2005-07-14 Method of manufacturing molded circuit component Pending JP2007027296A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016021618A1 (en) * 2014-08-05 2016-02-11 株式会社江東彫刻 Method for making wiring circuit component, mold for making wiring circuit component, and resinous wiring circuit component

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016021618A1 (en) * 2014-08-05 2016-02-11 株式会社江東彫刻 Method for making wiring circuit component, mold for making wiring circuit component, and resinous wiring circuit component
US10390437B2 (en) 2014-08-05 2019-08-20 Koto Engraving Co., Ltd. Method for manufacturing wiring circuit component, mold for manufacturing wiring circuit component, and resinous wiring circuit component

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