JP2007026501A - Semitransparent reflection film for optical recording medium and ag alloy sputtering target for forming semitransparent reflection film - Google Patents
Semitransparent reflection film for optical recording medium and ag alloy sputtering target for forming semitransparent reflection film Download PDFInfo
- Publication number
- JP2007026501A JP2007026501A JP2005204503A JP2005204503A JP2007026501A JP 2007026501 A JP2007026501 A JP 2007026501A JP 2005204503 A JP2005204503 A JP 2005204503A JP 2005204503 A JP2005204503 A JP 2005204503A JP 2007026501 A JP2007026501 A JP 2007026501A
- Authority
- JP
- Japan
- Prior art keywords
- mass
- translucent reflective
- optical recording
- reflection film
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
この発明は、半導体レーザーなどのレーザービームを用いて音声、映像、文字などの情報信号を再生あるいは記録・再生・消去を行う光記録ディスク（ＣＤ−ＲＷ，ＤＶＤ−ＲＷ，ＤＶＤ−ＲＡＭなど）の光記録媒体の構成層である半透明反射膜およびこの半透明反射膜をスパッタリング法にて形成するためのＡｇ合金スパッタリングターゲットに関するものである。 The present invention relates to an optical recording disk (CD-RW, DVD-RW, DVD-RAM, etc.) for reproducing or recording / reproducing / erasing information signals such as audio, video, and characters using a laser beam such as a semiconductor laser. The present invention relates to a translucent reflective film that is a constituent layer of an optical recording medium, and an Ag alloy sputtering target for forming the translucent reflective film by a sputtering method.
近年、記録膜を２層有する２層記録型の光記録媒体が提案されており、この２層記録型の光記録媒体においては、入射光側に厚さ：５〜１５ｎｍ程度の極めて薄い半透明反射膜が設けられており、かかる半透明反射膜は入射光側の記録層に対する反射膜としての機能の他に光を透過して第二の記録層に記録させる機能を有している。この２層記録型の光記録媒体に形成する半透明反射膜として純Ａｇ膜またはＡｇ合金膜が使用されており、この純Ａｇ膜またはＡｇ合金膜は加熱された記録膜の熱を速やかに逃がす作用を有するとともに３００〜８００ｎｍの幅広い波長域でのレーザー光に対する低い吸収率を有するところから広く使用されている。 In recent years, a two-layer recording type optical recording medium having two recording films has been proposed. In this two-layer recording type optical recording medium, an extremely thin translucent film having a thickness of about 5 to 15 nm on the incident light side. In addition to the function as a reflective film for the recording layer on the incident light side, the translucent reflective film has a function of transmitting light and recording on the second recording layer. A pure Ag film or an Ag alloy film is used as a translucent reflective film formed on the two-layer recording type optical recording medium. The pure Ag film or the Ag alloy film quickly releases the heat of the heated recording film. It is widely used because it has an action and has a low absorptance with respect to laser light in a wide wavelength range of 300 to 800 nm.
光記録媒体の半透明反射膜としていろいろなＡｇ合金からなる半透明反射膜が提案されている（例えば、特許文献１参照）。前記特許文献１には、Ｃｕ：０．５〜３質量％を含有し、さらにＣａ：０．００５〜０．０５質量％を含有し、残部がＡｇからなる光記録媒体の半透明反射膜が記載されており、この半透明反射膜はＣｕ：０．５〜３質量％を含有し、さらにＣａ：０．００５〜０．０５質量％を含有し、残部がＡｇからなる組成を有するＡｇ合金ターゲットを使用してスッパッタリングすることにより形成することが記載されている。
この場合、半透明反射膜が入射光を吸収すると、第二記録層において記録する効率が劣化するという問題が生じることから、半透明反射膜においては入射光の半透明反射膜への吸収を低減させることが重要な課題である。一方、半透明反射膜は入射側の第一の記録層への記録のために、先に述べた高倍速記録の要求から高熱伝導性も同時に実現しなければならない。
こうした特性を付与するのに最も好適な材料として純Ａｇが知られているが、半透明反射膜が純Ａｇからなる場合、記録、または記録／再生／消去の際に加熱されると膜が凝集することにより半透明反射膜に穴があいてしまうという問題点があり、一方、従来のＣｕ：０．５〜３質量％を含有し、さらにＣａ：０．００５〜０．０５質量％を含有し、残部がＡｇからなるＡｇ合金の半透明反射膜は、記録、または記録／再生／消去の際に加熱されても膜が凝集することはないが、熱伝導率が低くかつ吸収率が純Ａｇに比べて高いという問題点があった。
In this case, if the semi-transparent reflective film absorbs incident light, the recording efficiency in the second recording layer deteriorates, so the semi-transparent reflective film reduces the absorption of incident light into the semi-transparent reflective film. This is an important issue. On the other hand, the semitransparent reflective film must also realize high thermal conductivity at the same time due to the requirement for high-speed recording described above for recording on the first recording layer on the incident side.
Pure Ag is known as the most suitable material for imparting such characteristics. However, when the translucent reflective film is made of pure Ag, the film aggregates when heated during recording or recording / reproducing / erasing. There is a problem in that there is a hole in the translucent reflective film. On the other hand, conventional Cu: 0.5 to 3% by mass, further Ca: 0.005 to 0.05% by mass In addition, the Ag alloy translucent reflective film, the balance of which is made of Ag, does not aggregate even when heated during recording or recording / reproducing / erasing, but has low thermal conductivity and pure absorption. There was a problem that it was higher than Ag.
そこで本発明者らは、従来の半透明反射膜に比べてＣｕの添加量を吸収率があまり増加しない程度に少なくし、少量のＣａを同程度添加することにより耐凝集性を維持できるようにし、さらにＰｒ，Ｅｕ，Ｓｍの内から選ばれる１種または２種以上を少量添加することにより表面にバリア層を形成させ、もって耐腐食性を保持したＡｇ合金からなる半透明反射膜を得るべく研究を行なった。その結果、
（イ）Ｃｕ：０．１〜０．５質量％未満、Ｃａ：０．０１〜０．１質量％を含有し、さらにＰｒ，Ｅｕ，Ｓｍの内から選ばれる１種または２種以上を合計で０．０１〜０．３質量％を含有し、残部がＡｇおよび不可避不純物からなる組成のＡｇ合金膜は、低吸収率、高耐凝集性、高耐腐食性を有し、このＡｇ合金膜は光記録媒体の半透明反射膜として優れた特性を有する、
（ロ）前記（イ）記載の光記録媒体の半透明反射膜は、該光記録媒体の半透明反射膜の成分組成と同じ成分組成を有するＡｇ合金ターゲットを用いてスパッタリングすることにより得られる、という研究結果が得られたのである。
Therefore, the present inventors made it possible to maintain the aggregation resistance by reducing the amount of Cu added to the extent that the absorption rate does not increase so much as compared with the conventional translucent reflective film and adding a small amount of Ca to the same extent. In addition, in order to obtain a translucent reflective film made of an Ag alloy that maintains corrosion resistance by forming a barrier layer on the surface by adding a small amount of one or more selected from Pr, Eu and Sm. I did research. as a result,
(A) Cu: 0.1 to less than 0.5% by mass, Ca: 0.01 to 0.1% by mass, and one or more selected from Pr, Eu, Sm The Ag alloy film having a composition of 0.01 to 0.3% by mass with the balance being composed of Ag and inevitable impurities has a low absorption rate, high aggregation resistance, and high corrosion resistance. This Ag alloy film Has excellent properties as a translucent reflective film for optical recording media,
(B) The translucent reflective film of the optical recording medium described in (a) above is obtained by sputtering using an Ag alloy target having the same component composition as that of the translucent reflective film of the optical recording medium. The research result was obtained.
この発明は、かかる研究結果に基づいて成されたものであって、
（１）Ｃｕ：０．１〜０．５質量％未満、Ｃａ：０．０１〜０．１質量％を含有し、さらにＰｒ，Ｅｕ，Ｓｍの内から選ばれる１種または２種以上を合計で０．０１〜０．３質量％を含有し、残部がＡｇおよび不可避不純物からなる組成の銀合金からなる光記録媒体の半透明反射膜、
（２）Ｃｕ：０．１〜０．５質量％未満、Ｃａ：０．０１〜０．１質量％を含有し、さらにＰｒ，Ｅｕ，Ｓｍの内から選ばれる１種または２種以上を合計で０．０１〜０．３質量％を含有し、残部がＡｇおよび不可避不純物からなる組成の銀合金からなる光記録媒体の半透明反射膜を形成するためのＡｇ合金スパッタリングターゲット、に特徴を有するものである。
The present invention has been made based on such research results,
(1) Cu: 0.1 to less than 0.5% by mass, Ca: 0.01 to 0.1% by mass, and a total of one or more selected from Pr, Eu, Sm A translucent reflective film of an optical recording medium comprising a silver alloy having a composition of 0.01 to 0.3% by mass with the balance comprising Ag and inevitable impurities,
(2) Cu: 0.1 to less than 0.5% by mass, Ca: 0.01 to 0.1% by mass, and a total of one or more selected from Pr, Eu, Sm And an Ag alloy sputtering target for forming a translucent reflective film of an optical recording medium made of a silver alloy having a composition comprising Ag and inevitable impurities. Is.
この発明の半透明反射膜を形成するためのＡｇ合金スパッタリングターゲットは、原料として純度：９９.９９質量％以上の高純度Ａｇ、純度：９９．９９質量％以上の高純度Ｃｕ、純度：９９質量％以上のＣａ、いずれも純度：９９.９質量％以上のＰｒ，Ｅｕ，Ｓｍを用意する。
そして、まず、高純度Ａｇを高真空もしくは不活性ガス雰囲気中で溶解して得られたＡｇ溶湯を作製し、これらのＡｇ溶湯にＣａを所定の含有量となるように添加し、その後、真空または不活性ガス雰囲気中で鋳造することによりＡｇ−Ｃａ母合金を予め作製する。
さらに、高純度Ａｇを高真空もしくは不活性ガス雰囲気中で溶解して得られたＡｇ溶湯を作製し、これらのＡｇ溶湯にＣｕを所定の含有量となるように添加しさらにＰｒ，Ｅｕ，Ｓｍを所定の含有量となるように添加し、このようにして得られたＣｕ含有Ａｇ合金溶湯に予め作製したＡｇ−Ｃａ母合金を添加してＣａ含有を所定の成分組成となるように成分調整し、その後、得られたＡｇ合金溶湯を鋳型に鋳造してインゴットを作製し、これらインゴットを冷間加工したのち機械加工することによりＡｇ合金スパッタリングターゲットを製造することができる。このようにして作製したＡｇ合金ターゲットを用い、通常のスパッタリング装置を用いてこの発明のＡｇ合金からなる半透明反射膜を形成することができる。
An Ag alloy sputtering target for forming the translucent reflective film of the present invention has a purity of 99.99% by mass or more as a raw material, a purity of 99.99% by mass or more, a purity of 99.99% by mass or more of high purity Cu, and a purity of 99% by mass. % Of Ca, Pr: Eu, Sm of which purity is 99.9% by mass or more are prepared.
First, Ag melts obtained by melting high purity Ag in a high vacuum or in an inert gas atmosphere are prepared, and Ca is added to these Ag melts so as to have a predetermined content. Alternatively, an Ag—Ca master alloy is prepared in advance by casting in an inert gas atmosphere.
Furthermore, Ag melts obtained by melting high purity Ag in a high vacuum or inert gas atmosphere are prepared, Cu is added to these Ag melts to a predetermined content, and Pr, Eu, Sm is further added. Is added so as to have a predetermined content, and an Ag-Ca master alloy prepared in advance is added to the Cu-containing Ag alloy molten metal obtained in this way, so that the content of Ca is adjusted to a predetermined component composition. Then, the obtained Ag alloy molten metal is cast into a mold to produce ingots, and these ingots are cold worked and then machined to produce an Ag alloy sputtering target. Using the thus produced Ag alloy target, a translucent reflective film made of the Ag alloy of the present invention can be formed using an ordinary sputtering apparatus.
次に、この発明のＡｇ合金からなる半透明反射膜およびこのＡｇ合金からなる半透明反射膜を形成するためのスパッタリングターゲットにおける成分組成を前記の如く限定した理由を説明する。 Next, the reason why the composition of components in the sputtering target for forming the translucent reflective film made of the Ag alloy of the present invention and the translucent reflective film made of the Ag alloy is limited as described above will be described.
Ｃｕ：
Ｃｕは、Ａｇに固溶して半透明反射膜の耐凝集性を高める作用を有するが、Ｃｕを０．１質量％未満含んでも半透明反射膜の耐凝集性を高めるに十分な作用がなく、、一方、０．５質量％以上を含有すると、半透明反射層の吸収率が大きくなり、光記録ディスクなどの特性を十分維持できなくなるので好ましくない。したがって、Ａｇ合金半透明反射層およびこのＡｇ合金半透明反射層を形成するためのスパッタリングターゲットに含まれるこれらＣｕの含有量は０．１〜０．５質量％未満に定めた。一層好ましい範囲は０．２〜０．４質量％である。
Cu:
Cu has the effect of increasing the aggregation resistance of the translucent reflective film by dissolving in Ag, but it does not have sufficient effect to increase the aggregation resistance of the translucent reflective film even if it contains less than 0.1% by mass of Cu. On the other hand, when the content is 0.5% by mass or more, the absorptivity of the translucent reflective layer increases, and the characteristics of the optical recording disk and the like cannot be sufficiently maintained, which is not preferable. Therefore, the content of these Cu contained in the Ag alloy translucent reflective layer and the sputtering target for forming the Ag alloy translucent reflective layer is determined to be less than 0.1 to 0.5% by mass. A more preferable range is 0.2 to 0.4% by mass.
Ｃａ：
Ｃａは、Ａｇにほとんど固溶しないが、スッパッタリングにより膜を形成することによりＡｇによって形成される結晶粒内に強制的に固溶され、それによって半透明反射膜の結晶粒内でのＡｇの自己拡散を抑制し、さらに結晶粒界にも析出し、Ａｇ内部への強制固溶と結晶粒界ヘの析出と言う両者の効果により膜が加熱されても結晶粒同士の結合を防止し、半透明反射膜の凝集防止を促進する効果を有するが、Ｃａを０．０１質量％未満含んでも所望の効果が得られず、一方、Ｃａが０．１質量％を越えて含有すると、Ａｇ合金半透明反射膜の熱伝導率を低下させるので好ましくない。したがって、Ａｇ合金半透明反射膜およびこのＡｇ合金半透明反射膜を形成するためのスパッタリングターゲットに含まれるこれらＣａの含有量は０．０１〜０．１質量％に定めた。一層好ましい範囲は０．０１〜０．０３質量％である。
Ca:
Ca hardly dissolves in Ag, but by forming a film by sputtering, the Ca is forcibly dissolved in the crystal grains formed by Ag, and thereby Ag in the crystal grains of the translucent reflective film. Suppression of self-diffusion, and also precipitation at the grain boundaries, prevents the bonding of the grains even when the film is heated by the effects of both forced solid solution inside Ag and precipitation at the grain boundaries. , The effect of promoting the prevention of aggregation of the translucent reflective film is obtained, but even if Ca is contained in an amount of less than 0.01% by mass, the desired effect cannot be obtained. This is not preferable because it reduces the thermal conductivity of the alloy translucent reflective film. Therefore, the content of these Ca contained in the Ag alloy translucent reflective film and the sputtering target for forming the Ag alloy translucent reflective film is set to 0.01 to 0.1% by mass. A more preferable range is 0.01 to 0.03% by mass.
Ｐｒ，Ｅｕ，Ｓｍ：
これら成分は、Ａｇと反応し、結晶粒内および／または結晶粒界に金属間化合物を形成し、凝集抑制効果を発揮するとともに耐腐食性を向上させるのでＣａと共に添加するが、これら成分の添加量が０．０１質量％未満含んでも凝集を抑制する格段の効果が得られず、一方、０．３質量％を越えて含有すると熱伝導率が低下し、高熱伝導率を有する半透明反射膜とはならないので好ましくない。したがって、Ａｇ合金からなる半透明反射膜およびこの半透明反射膜を形成するためのＡｇ合金スパッタリングターゲットに含まれるこれら成分の含有量は０．０１〜０．３質量％に定めた。
Pr, Eu, Sm:
These components react with Ag to form intermetallic compounds in the crystal grains and / or crystal grain boundaries, exhibiting the aggregation suppressing effect and improving the corrosion resistance. Therefore, these components are added with Ca. Even if the amount is less than 0.01% by mass, a remarkable effect of suppressing aggregation cannot be obtained. On the other hand, if the amount exceeds 0.3% by mass, the thermal conductivity decreases and the translucent reflective film has a high thermal conductivity. It is not preferable because it is not. Therefore, the content of these components contained in the Ag alloy sputtering target for forming the translucent reflective film made of Ag alloy and the translucent reflective film is set to 0.01 to 0.3% by mass.
この発明のＡｇ合金スパッタリングターゲットを用いて作製した光記録媒体の半透明反射膜は、従来のＡｇ合金スパッタリングターゲットを用いて作製した光記録媒体の半透明反射膜に比べて、純Ａｇ半透明反射膜に近い高熱伝導率および純Ａｇ半透明反射膜に近い低吸収率を有し、しかも高倍速記録に対する半透明反射膜の経時変化によって生じる凝集による穴明きがなく、長期にわたって使用できる光記録媒体を製造することができ、メディア産業の発展に大いに貢献し得るものである。 The translucent reflective film of the optical recording medium manufactured using the Ag alloy sputtering target of the present invention is pure Ag translucent reflective as compared to the translucent reflective film of the optical recording medium manufactured using the conventional Ag alloy sputtering target. Optical recording that has a high thermal conductivity close to that of a film and a low absorptance close to that of a pure Ag semi-transparent reflective film, and that is free from perforation due to agglomeration caused by changes over time of the semi-transparent reflective film for high-speed recording Media can be manufactured and can greatly contribute to the development of the media industry.
原料として純度:９９．９９質量％以上のＡｇ、純度：９９質量％以上のＣａ、並びに純度：９９.９質量％以上のＰｒ，Ｅｕ，Ｓｍを用意した。
まず、Ａｇを高周波真空溶解炉で溶解してＡｇ溶湯を作製し、このＡｇ溶湯にＣａが５質量％となるように添加し、溶解後炉内圧力が大気圧になるまでＡｒガスを充填し、その後、黒鉛鋳型に鋳造し、Ａｇ−５質量％Ｃａ母合金を作製した。
次に、Ａｇを高周波真空溶解炉で溶解してＡｇ溶湯を作製し、このＡｇ溶湯にＣｕ、Ｐｒ，Ｅｕ，Ｓｍを添加し、さらに前記Ａｇ−５質量％Ｃａ母合金を添加して溶解し鋳造することによりインゴットを作製し、得られたインゴットを６００℃、２時間加熱した後、圧延し、次いで機械加工することにより直径：１２５ｍｍ、厚さ：５ｍｍの寸法を有し、表１〜２に示される成分組成を有する本発明ターゲット１〜１８、比較ターゲット１〜１０および従来ターゲット１を作製した。
さらに比較のために、Ａｇを高周波真空溶解炉にて溶解することによりＡｇ溶湯を作製し、得られたＡｇ溶湯を黒鉛製鋳型にＡｒガス雰囲気中で鋳造することによりインゴットを作製し、得られたインゴットを所定の大きさに切断した後、室温にて冷間圧延し、その後５５０℃、１時間保持の条件で熱処理を加え、次いで機械加工することにより直径：１２５ｍｍ、厚さ：５ｍｍの寸法を有し、表２に示される純Ａｇからなる従来ターゲット２を製造した。
Purity: 99.99 mass% or more of Ag, purity: 99 mass% or more of Ca, and purity: 99.9 mass% or more of Pr, Eu, Sm were prepared as raw materials.
First, Ag is melted in a high-frequency vacuum melting furnace to prepare a molten Ag, added to this molten Ag so that Ca becomes 5% by mass, and after melting, Ar gas is charged until the pressure in the furnace reaches atmospheric pressure. Thereafter, the resultant was cast into a graphite mold to produce an Ag-5 mass% Ca master alloy.
Next, Ag is melted in a high-frequency vacuum melting furnace to produce a molten Ag, Cu, Pr, Eu, Sm is added to the molten Ag, and the Ag-5 mass% Ca master alloy is further added and melted. An ingot was produced by casting, and the obtained ingot was heated at 600 ° C. for 2 hours, then rolled and then machined to have a diameter of 125 mm and a thickness of 5 mm. Tables 1-2 Inventive targets 1 to 18, comparative targets 1 to 10, and conventional target 1 having the component composition shown in FIG.
For further comparison, an Ag melt was prepared by melting Ag in a high-frequency vacuum melting furnace, and an ingot was prepared by casting the obtained Ag melt into a graphite mold in an Ar gas atmosphere. The ingot was cut into a predetermined size, cold-rolled at room temperature, then heat-treated at 550 ° C. for 1 hour, and then machined to obtain a diameter of 125 mm and a thickness of 5 mm. The conventional target 2 made of pure Ag shown in Table 2 was manufactured.
これら本発明ターゲット１〜１８、比較ターゲット１〜１０および従来ターゲット１〜２を用いて下記の条件でスパッタリングすることにより表３〜４に示される成分組成を有する本発明半透明反射膜１〜１８、比較半透明反射膜１〜１０および従来半透明反射膜１〜２を形成し、これら本発明半透明反射膜１〜１８、比較半透明反射膜１〜１０および従来半透明反射膜１〜２について、下記の測定を行った。 The translucent reflective films 1-18 of the present invention having the component compositions shown in Tables 3-4 by sputtering under the following conditions using these inventive targets 1-18, comparative targets 1-10 and conventional targets 1-2. The comparative translucent reflective films 1 to 10 and the conventional translucent reflective films 1 to 2 are formed. These semitransparent reflective films 1 to 18, the comparative translucent reflective films 1 to 10 and the conventional translucent reflective films 1 to 2 are formed. The following measurements were performed.
（ａ）膜の熱伝導率測定
本発明ターゲット１〜１８、比較ターゲット１〜１０および従来ターゲット１〜２をそれぞれ無酸素銅製のバッキングプレートにはんだ付けし、これを直流マグネトロンスパッタ装置に装着し、真空排気装置にて直流マグネトロンスパッタ装置内を１×１０-4Ｐａまで排気した後、Ａｒガスを導入して１．０Ｐａのスパッタガス圧とし、続いて直流電源にてターゲットに１００Ｗの直流スパッタ電力を印加し、前記ターゲットに対抗しかつ７０ｍｍの間隔を設けて前記ターゲットと平行に配置した直径：３０ｍｍ、厚さ：１ｍｍの酸化膜付きＳｉウエハ基板と前記ターゲットの間にプラズマを発生させ、厚さ：１００ｎｍの表２〜３に示される成分組成を有する本発明半透明反射膜１〜１８、比較半透明反射膜１〜１０および従来半透明反射膜１〜２を形成した。
このようにして形成した厚さ：１００ｎｍの半透明反射膜の比抵抗を四探針法により測定し、ウィーデマンフランツの法則に基づく式：κ＝２．４４×１０−８Ｔ／ρ（ただし、κ：熱伝導率、Ｔ：絶対温度、ρ：比抵抗）により比抵抗値から熱伝導率を計算により求め、その結果を表３〜４に示した。
(A) Measurement of thermal conductivity of film The present invention targets 1 to 18, comparative targets 1 to 10, and conventional targets 1 to 2 are each soldered to a backing plate made of oxygen-free copper, and this is attached to a direct current magnetron sputtering apparatus. After evacuating the DC magnetron sputtering device to 1 × 10 −4 Pa with a vacuum exhaust device, Ar gas is introduced to a sputtering gas pressure of 1.0 Pa, and then a DC power of 100 W is applied to the target with a DC power source. The plasma is generated between the Si wafer substrate with an oxide film having a diameter of 30 mm and a thickness of 1 mm disposed opposite to the target and parallel to the target with a distance of 70 mm and the target, The present invention translucent reflective films 1 to 18 having comparative composition shown in Tables 2 to 3 of 100 nm, comparative translucent reflective films 1 to 1 0 and the conventional translucent reflective films 1 and 2 were formed.
The specific resistance of the thus formed translucent reflective film having a thickness of 100 nm was measured by the four-probe method, and the formula based on the Weedmann Franz law: κ = 2.44 × 10 −8 T / ρ (however, , Κ: thermal conductivity, T: absolute temperature, ρ: specific resistance), the thermal conductivity was calculated from the specific resistance value, and the results are shown in Tables 3-4.
（ｂ）膜の反射率・透過率・吸収率測定
反射率・透過率を測定するために直径：３０ｍｍ、厚さ：０．６ｍｍのポリカーボネート基板と前記本発明ターゲット１〜１８、比較ターゲット１〜１０および従来ターゲット１〜２の間にプラズマを発生させ、ポリカーボネート基板に厚さ：５〜１５ｎｍの表３〜４に示される成分組成を有する本発明半透明反射膜１〜１８、比較半透明反射膜１〜１０および従来半透明反射膜１〜２を形成し、波長：３００〜８００ｎｍの範囲の反射率と透過率を分光光度計にて測定し、波長：６５０ｎｍでのスパッタ側での反射率、および透過率を求め、「１００−（反射率＋透過率）」を吸収率と定義して求め、その結果を表３〜４に示した。
(B) Measurement of reflectance / transmittance / absorptivity of film In order to measure reflectance / transmittance, a polycarbonate substrate having a diameter of 30 mm and a thickness of 0.6 mm, the present invention targets 1 to 18 and comparative targets 1 to 10 and the conventional targets 1 and 2, the present invention translucent reflective films 1 to 18 having comparative composition shown in Tables 3 to 4 having a thickness of 5 to 15 nm on a polycarbonate substrate, comparative translucent reflection Films 1 to 10 and conventional translucent reflective films 1 to 2 are formed, and the reflectance and transmittance in the wavelength range of 300 to 800 nm are measured with a spectrophotometer, and the reflectance on the sputtering side at the wavelength of 650 nm. The transmittance was determined, and “100− (reflectance + transmittance)” was defined as the absorptance, and the results are shown in Tables 3-4.
（ｃ）膜の耐凝集性測定
直径：１２０ｍｍ、厚さ：０．６ｍｍのポリカーボネート基板と前記本発明ターゲット１〜１８、比較ターゲット１〜１０および従来ターゲット１〜２の間にプラズマを発生させ、ポリカーボネート基板に厚さ：５〜１５ｎｍの表３〜４に示される成分組成を有する本発明半透明反射膜１〜１８、比較半透明反射膜１〜１０および従来半透明反射膜１〜２を形成し、これら膜を温度：９０℃、相対湿度：８５％の恒温恒湿槽にて３００時間保持したのち、原子間力顕微鏡による表面形態を観察することにより膜に発生する穴の有無を調査し、その結果を表３〜４に示して膜の耐凝集性を評価した。
(C) Measurement of anti-aggregation property of the film A plasma was generated between a polycarbonate substrate having a diameter of 120 mm and a thickness of 0.6 mm and the above-mentioned targets 1 to 18, comparative targets 1 to 10, and conventional targets 1 and 2. The present invention translucent reflective films 1 to 18, comparative translucent reflective films 1 to 10 and conventional translucent reflective films 1 and 2 having the composition shown in Tables 3 to 4 having a thickness of 5 to 15 nm are formed on a polycarbonate substrate. These films were kept in a constant temperature and humidity chamber with a temperature of 90 ° C. and a relative humidity of 85% for 300 hours, and then the presence of holes generated in the films was investigated by observing the surface form with an atomic force microscope. The results are shown in Tables 3 to 4, and the aggregation resistance of the film was evaluated.
表１〜４に示される結果から、本発明ターゲット１〜１８を用いてスパッタリングを行うことにより得られた半透明反射膜は、従来ターゲット１を用いてスパッタリングを行うことにより得られた純Ａｇ膜に比べて熱伝導率、および反射率、透過率が近似していることから吸収率が低いことを示しており、さらに凝集による穴が発生しない点で優れており、さらに従来ターゲット２を用いてスパッタリングを行うことにより得られた半透明反射膜に比べて熱伝導率が高く、吸収率が低いので優れていることがわかる。しかし、この発明の範囲から外れてＣｕ、Ｃａ、Ｐｒ、ＥｕおよびＳｍを含む比較ターゲット１〜１０を用いて作製した半透明反射膜は、反射率、透過率、吸収率が悪化したり、熱伝導率が低下したり、さらに凝集による穴が発生したりして好ましくない特性が現れることが分かる。 From the results shown in Tables 1 to 4, the translucent reflective film obtained by performing sputtering using the present invention targets 1 to 18 is a pure Ag film obtained by performing sputtering using the conventional target 1. Compared to the above, the thermal conductivity, reflectance, and transmittance are close, indicating that the absorption rate is low, and further excellent in that no holes are formed due to agglomeration. It can be seen that it is excellent because it has a high thermal conductivity and a low absorptivity compared to the translucent reflective film obtained by sputtering. However, the translucent reflective film produced using the comparative targets 1 to 10 containing Cu, Ca, Pr, Eu, and Sm outside the scope of the present invention has deteriorated reflectivity, transmittance, and absorptivity. It can be seen that undesirable characteristics appear due to the decrease in conductivity and the occurrence of holes due to aggregation.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005204503A JP4693104B2 (en) | 2005-07-13 | 2005-07-13 | Translucent reflective film for optical recording medium and Ag alloy sputtering target for forming the translucent reflective film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005204503A JP4693104B2 (en) | 2005-07-13 | 2005-07-13 | Translucent reflective film for optical recording medium and Ag alloy sputtering target for forming the translucent reflective film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007026501A true JP2007026501A (en) | 2007-02-01 |
| JP4693104B2 JP4693104B2 (en) | 2011-06-01 |
Family
ID=37787098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005204503A Expired - Fee Related JP4693104B2 (en) | 2005-07-13 | 2005-07-13 | Translucent reflective film for optical recording medium and Ag alloy sputtering target for forming the translucent reflective film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4693104B2 (en) |
-
2005
- 2005-07-13 JP JP2005204503A patent/JP4693104B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP4693104B2 (en) | 2011-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2005020222A1 (en) | Reflection film optical recording medium and silver alloy sputtering target for forming reflection film | |
| JP3772972B2 (en) | Silver alloy sputtering target for reflection layer formation of optical recording media | |
| JP2007066417A (en) | Aluminum alloy reflection film for optical recording medium having excellent corrosion resistance and surface smoothness and sputtering target for forming the reflection film | |
| JP4864538B2 (en) | Translucent reflective film for optical recording medium and Ag alloy sputtering target for forming the translucent reflective film | |
| JP4186221B2 (en) | Reflective film and translucent reflective film for optical recording medium, and Ag alloy sputtering target for forming these reflective films | |
| JP2005048231A (en) | Sputtering target material | |
| JP3915114B2 (en) | Silver alloy sputtering target for reflection film formation of optical recording media | |
| JP4693104B2 (en) | Translucent reflective film for optical recording medium and Ag alloy sputtering target for forming the translucent reflective film | |
| JPWO2010090137A1 (en) | Thin film mainly composed of titanium oxide and sintered sputtering target composed mainly of titanium oxide | |
| JP4186223B2 (en) | Reflective film and translucent reflective film for optical recording medium, and Ag alloy sputtering target for forming these reflective films | |
| JP4186224B2 (en) | Reflective film for optical recording medium and Ag alloy sputtering target for forming the reflective film | |
| JP4186222B2 (en) | Reflective film and translucent reflective film for optical recording medium, and Ag alloy sputtering target for forming these reflective films | |
| US8815149B2 (en) | Semi-reflective film and reflective film for optical recording medium, and Ag alloy sputtering target for forming semi-reflective film or reflective film for optical recording medium | |
| JP3770156B2 (en) | Silver alloy sputtering target for reflecting film formation of optical recording medium and reflecting film formed using this target | |
| JP4553149B2 (en) | Translucent reflective film and reflective film for optical recording medium, and Ag alloy sputtering target for forming these translucent reflective film and reflective film | |
| JP2003293055A (en) | Silver alloy thin film and silver alloy for forming thin film | |
| JP2003160860A (en) | Silver alloy sputtering target for forming reflection coat on optical recording medium | |
| JP3968662B2 (en) | Silver alloy sputtering target for reflection film formation of optical recording media | |
| WO2004081929A1 (en) | Silver alloy sputtering target for forming reflective layer of optical recording medium | |
| JP3772971B2 (en) | Silver alloy sputtering target for reflection layer formation of optical recording media | |
| JP5287028B2 (en) | Ag alloy sputtering target for forming translucent reflective film of optical recording medium | |
| JP4069661B2 (en) | Silver alloy sputtering target for reflection film formation of optical recording media | |
| JP3803864B2 (en) | Silver alloy sputtering target for reflection layer formation of optical recording media | |
| TWI504770B (en) | An aluminum alloy reflective film for optical recording media, and a sputtering target used to form the reflective film | |
| JP2012238365A (en) | Translucent reflective film for optical recording media and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080321 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090126 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090129 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090420 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110218 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140304 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4693104 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |