JP2007024607A - Pyroelectctric sensor - Google Patents

Pyroelectctric sensor Download PDF

Info

Publication number
JP2007024607A
JP2007024607A JP2005205011A JP2005205011A JP2007024607A JP 2007024607 A JP2007024607 A JP 2007024607A JP 2005205011 A JP2005205011 A JP 2005205011A JP 2005205011 A JP2005205011 A JP 2005205011A JP 2007024607 A JP2007024607 A JP 2007024607A
Authority
JP
Japan
Prior art keywords
spacer
amplifier substrate
pyroelectric
stem
tgs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005205011A
Other languages
Japanese (ja)
Inventor
Yasuhiko Furuyama
康彦 古山
Minoru Kashihara
稔 樫原
Kazuyuki Watanabe
一之 渡邉
Noriyuki Nishii
宣之 西居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP2005205011A priority Critical patent/JP2007024607A/en
Publication of JP2007024607A publication Critical patent/JP2007024607A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pyroelectric sensor capable of protecting generation of piezoelectric noises and cracks, suppressing dispersion in property, and preventing deterioration due to permeation of water. <P>SOLUTION: A TGS based pyroelectric crystal (1) is fixed to an amplifier substrate (4) in one-point support, with conductive paste (11). The amplifier substrate (4) is supported by a stem (7) by pinching a spacer (12). Let the spacer (12) be desiccating agents. Thereby, since deformation of the TGS based pyroelectric crystal (1) becomes possible, generation of piezoelectric noises and formation of cracks can be inhibited. Because the spacer (12) is pinched between the amplifier substrate (4) and the stem (7), dispersions in tilt and height of the amplifier substrate (4) are suppressed, resulting also in lessening of dispersion in the property. Even if permeation of water makes progress in a long term, as the spacer (12) of desiccating agents absorbs moisture, a deterioration including a sensitivity degradation due to leakage current and a performance decrement due to a deliquescence of the TGS based pyroelectric crystals do not occur. Moreover, the acceptance surface of TGS based pyroelectric crystal (1) can be placed at a desired height by adjusting the height of spacer (12). <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、焦電センサに関し、さらに詳しくは、圧電性ノイズやクラックの発生を防止でき、特性のバラツキを抑制でき、さらに、透湿による劣化を防止することが出来る焦電センサに関する。   The present invention relates to a pyroelectric sensor, and more particularly to a pyroelectric sensor capable of preventing the occurrence of piezoelectric noise and cracks, suppressing variation in characteristics, and preventing deterioration due to moisture permeability.

従来、焦電結晶の複数箇所をアンプ基板に固定し、そのアンプ基板をステムから浮かせて複数のピンでステムに支持した構造の焦電センサが知られている（例えば、特許文献１，２参照。）。   Conventionally, there are known pyroelectric sensors having a structure in which a plurality of pyroelectric crystals are fixed to an amplifier substrate, the amplifier substrate is lifted from the stem and supported by the stem with a plurality of pins (for example, see Patent Documents 1 and 2). .)

特開平６−２０１４７７号公報（図２）JP-A-6-2014477 (FIG. 2) 特開平９−１８４７５６号公報（図１）JP-A-9-184756 (FIG. 1)

従来の焦電センサでは、焦電結晶を複数箇所でアンプ基板に固定していたが、入力熱線による焦電結晶の変形が無理に抑えられるため、圧電性によるノイズが発生したり、クラックが発生してしまう問題点があった。
また、アンプ基板をステムから浮かせて複数のピンでステムに支持する場合にアンプ基板の傾きや高さにバラツキを生じることがあったが、アンプ基板に焦電結晶が固定されているために、特性にもバラツキを生じてしまう問題点があった。
さらに、ステムに窓付キャップを被せて密封するが、長期間のうちに透湿し、リーク電流による感度低下やＴＧＳ系焦電結晶の潮解による性能低下などの劣化を起こす問題点があった。
そこで、本発明の目的は、圧電性ノイズやクラックの発生を防止でき、特性のバラツキを抑制でき、さらに、透湿による劣化を防止することが出来る焦電センサを提供することにある。 In the conventional pyroelectric sensor, the pyroelectric crystal is fixed to the amplifier board at multiple locations. However, deformation of the pyroelectric crystal due to the input heat rays is forcibly suppressed, so noise due to piezoelectricity and cracks occur. There was a problem that would do.
In addition, when the amplifier board is floated from the stem and supported by the stem with a plurality of pins, there is a variation in the inclination and height of the amplifier board, but because the pyroelectric crystal is fixed to the amplifier board, There was also a problem that the characteristics varied.
Furthermore, although the stem is covered with a cap with a window, it has a problem in that it permeates moisture over a long period of time and causes deterioration such as a decrease in sensitivity due to leak current and a decrease in performance due to deliquescence of the TGS pyroelectric crystal.
Accordingly, an object of the present invention is to provide a pyroelectric sensor capable of preventing the occurrence of piezoelectric noise and cracks, suppressing variation in characteristics, and further preventing deterioration due to moisture permeation.

第１の観点では、本発明は、電極を形成した焦電結晶を載せたアンプ基板と、ＦＥＴと、抵抗器と、ピンを有するステムとを具備し、前記焦電結晶を一点支持で前記アンプ基板に固定すると共に、スペーサを挟んで前記アンプ基板をステムで支持したことを特徴とする焦電センサを提供する。
上記第１の観点による焦電センサでは、焦電結晶を一点支持でアンプ基板に支持するため、焦電結晶の変形が可能になり、圧電性ノイズが発生したり、クラックが発生してしまうことを防止できる。
また、アンプ基板とステムの間にスペーサを挟むため、アンプ基板の傾きや高さのバラツキが少なくなり、アンプ基板に焦電結晶が固定されているため、特性のバラツキも少なくなる。また、スペーサの高さを調節することにより所望の高さに焦電結晶の受光面を位置させることが出来る。 In a first aspect, the present invention includes an amplifier substrate on which a pyroelectric crystal on which an electrode is formed is mounted, an FET, a resistor, and a stem having a pin, and the amplifier is supported by one point of the pyroelectric crystal. There is provided a pyroelectric sensor characterized in that the amplifier substrate is supported by a stem while being fixed to a substrate and sandwiching a spacer.
In the pyroelectric sensor according to the first aspect, since the pyroelectric crystal is supported on the amplifier substrate with one point of support, the pyroelectric crystal can be deformed, and piezoelectric noise is generated or cracks are generated. Can be prevented.
In addition, since the spacer is sandwiched between the amplifier substrate and the stem, variations in the inclination and height of the amplifier substrate are reduced, and since the pyroelectric crystal is fixed to the amplifier substrate, variations in characteristics are also reduced. Further, the light receiving surface of the pyroelectric crystal can be positioned at a desired height by adjusting the height of the spacer.

第２の観点では、本発明は、上記構成の焦電センサにおいて、前記ＦＥＴおよび／または前記抵抗器が前記アンプ基板上に搭載されていることを特徴とする焦電センサを提供する。
上記第２の観点による焦電センサでは、ＦＥＴおよび抵抗器の少なくとも一方がアンプ基板上に搭載されているため、配線が容易になる。 In a second aspect, the present invention provides a pyroelectric sensor, wherein the FET and / or the resistor are mounted on the amplifier substrate in the pyroelectric sensor having the above-described configuration.
In the pyroelectric sensor according to the second aspect, since at least one of the FET and the resistor is mounted on the amplifier substrate, wiring becomes easy.

第３の観点では、本発明は、上記構成の焦電センサにおいて、前記スペーサが乾燥剤であることを特徴とする焦電センサを提供する。
上記第３の観点による焦電センサでは、乾燥剤をスペーサとして使うため、長期間のうちに透湿しても乾燥剤に吸湿され、リーク電流による感度低下やＴＧＳ系焦電結晶の潮解による性能低下などの劣化を起こすことがなくなる。 In a third aspect, the present invention provides a pyroelectric sensor, wherein the spacer is a desiccant in the pyroelectric sensor configured as described above.
In the pyroelectric sensor according to the third aspect, since the desiccant is used as a spacer, even if moisture permeates over a long period of time, the desiccant absorbs moisture, and the performance decreases due to a decrease in sensitivity due to leakage current and the liquefaction of the TGS pyroelectric crystal. Deterioration such as lowering will not occur.

本発明の焦電センサによれば、圧電性ノイズやクラックの発生を防止でき、特性のバラツキを抑制でき、さらに、透湿による劣化を防止することが出来る。   According to the pyroelectric sensor of the present invention, it is possible to prevent the occurrence of piezoelectric noise and cracks, to suppress variation in characteristics, and to prevent deterioration due to moisture permeability.

以下、図に示す実施例により本発明をさらに詳細に説明する。なお、これにより本発明が限定されるものではない。   Hereinafter, the present invention will be described in more detail with reference to the embodiments shown in the drawings. Note that the present invention is not limited thereby.

図１は、実施例１に係る焦電センサ１００を示す一部破断正面図である。
この焦電センサ１００は、上面電極２および下面電極３を形成したＴＧＳ系焦電結晶１と、ＦＥＴ５および抵抗器６を載せたアンプ基板４と、ピン８，９，１０を有するステム７と、全体を密封するためにステム７に接着される窓付キャップ１５とを具備しており、ＴＧＳ系焦電結晶１は導電ペースト１１により一点支持でアンプ基板４に固定されると共に、スペーサ１２を挟んでアンプ基板４はステム７に支持されている。また、アンプ基板４に形成された配線パターンとワイヤ１３により電気的接続が行われている。
赤外線は、窓材１６から入射し、ＴＧＳ系焦電結晶１で検出される。 FIG. 1 is a partially broken front view showing the pyroelectric sensor 100 according to the first embodiment.
The pyroelectric sensor 100 includes a TGS pyroelectric crystal 1 having an upper surface electrode 2 and a lower surface electrode 3, an amplifier substrate 4 on which an FET 5 and a resistor 6 are mounted, a stem 7 having pins 8, 9, and 10, A TGS-based pyroelectric crystal 1 is fixed to the amplifier substrate 4 at a single point by a conductive paste 11 and sandwiches a spacer 12 therebetween. The amplifier board 4 is supported by the stem 7. In addition, an electrical connection is made by the wiring pattern formed on the amplifier substrate 4 and the wire 13.
Infrared rays are incident from the window material 16 and detected by the TGS pyroelectric crystal 1.

図２は、窓付キャップ１５を外した焦電センサ１００を示す上面図である。
アンプ基板４に形成された配線パターンの図示は省略している。 FIG. 2 is a top view showing the pyroelectric sensor 100 with the window cap 15 removed.
The wiring pattern formed on the amplifier board 4 is not shown.

スペーサ１２は、乾燥剤であるモレキュラーシーブを成形したものである。   The spacer 12 is formed by molding a molecular sieve that is a desiccant.

図３〜図７は、焦電センサ１００の製造過程を示す説明図である。
まず、図３に示すように、ＦＥＴ５および抵抗器６を固着したアンプ基板４の上面中央に導電ペースト１１を塗布する。
そして、図４に示すように、導電ペースト１１の上にＴＧＳ系焦電結晶１を載せ、導電ペースト１１を硬化して固定する。 3-7 is explanatory drawing which shows the manufacturing process of the pyroelectric sensor 100. FIG.
First, as shown in FIG. 3, a conductive paste 11 is applied to the center of the upper surface of the amplifier substrate 4 to which the FET 5 and the resistor 6 are fixed.
Then, as shown in FIG. 4, the TGS pyroelectric crystal 1 is placed on the conductive paste 11, and the conductive paste 11 is cured and fixed.

次に、図５に示すように、ステム７の上面中央にスペーサ１２を接着剤（例えばエポキシ樹脂）で接着する。また、スペーサ１２の上面に接着剤を塗布する。
そして、図６に示すように、スペーサ１２の上にアンプ基板４を載せ、接着剤を硬化して固定する。 Next, as shown in FIG. 5, the spacer 12 is bonded to the center of the upper surface of the stem 7 with an adhesive (for example, epoxy resin). Further, an adhesive is applied to the upper surface of the spacer 12.
Then, as shown in FIG. 6, the amplifier substrate 4 is placed on the spacer 12, and the adhesive is cured and fixed.

次に、図７に示すように、アンプ基板４とピン８，９，１０とを導電性ペースト（図示省略）で固定し、上面電極２とピン１０とを導電性ペースト１４およびワイヤ１３で配線する。
そして、図１に示すように、窓付キャップ１５をステム７に被せて接着剤で封止固定する。 Next, as shown in FIG. 7, the amplifier substrate 4 and the pins 8, 9, 10 are fixed with a conductive paste (not shown), and the upper surface electrode 2 and the pin 10 are wired with the conductive paste 14 and the wires 13. To do.
Then, as shown in FIG. 1, a cap 15 with a window is placed on the stem 7 and sealed and fixed with an adhesive.

実施例１の焦電センサ１００によれば、次の効果が得られる。
（１）焦電結晶１を一点支持でアンプ基板４に支持するため、焦電結晶１の変形が可能になり、圧電性ノイズが発生したり、クラックが発生してしまうことを防止できる。
（２）アンプ基板４とステム７の間にスペーサ１２を挟むため、アンプ基板４の傾きや高さのバラツキが少なくなり、アンプ基板４に焦電結晶が固定されているため、特性のバラツキも少なくなる。また、スペーサ１２の高さを調節することにより所望の高さにＴＧＳ系焦電結晶１の受光面を位置させることが出来る。
（３）乾燥剤をスペーサ１２として使うため、長期間のうちに透湿しても乾燥剤に吸湿され、リーク電流による感度低下やＴＧＳ系焦電結晶１の潮解による性能低下などの劣化を起こすことがなくなる。 According to the pyroelectric sensor 100 of the first embodiment, the following effects can be obtained.
(1) Since the pyroelectric crystal 1 is supported on the amplifier substrate 4 by one point support, the pyroelectric crystal 1 can be deformed, and piezoelectric noise and cracks can be prevented from occurring.
(2) Since the spacer 12 is sandwiched between the amplifier substrate 4 and the stem 7, variations in the inclination and height of the amplifier substrate 4 are reduced, and since the pyroelectric crystal is fixed to the amplifier substrate 4, there is also a variation in characteristics. Less. Further, the light receiving surface of the TGS pyroelectric crystal 1 can be positioned at a desired height by adjusting the height of the spacer 12.
(3) Since the desiccant is used as the spacer 12, even if moisture permeates over a long period of time, the desiccant absorbs moisture, causing deterioration such as a decrease in sensitivity due to leakage current and a decrease in performance due to deliquescence of the TGS pyroelectric crystal 1. Nothing will happen.

透湿による劣化のおそれがない場合には、スペーサ１２として、ナイロンなど非乾燥剤を用いてもよい。   If there is no risk of deterioration due to moisture permeability, a non-drying agent such as nylon may be used as the spacer 12.

導電ペースト１１と共に、導電性の構造材を用いてもよい。   A conductive structural material may be used together with the conductive paste 11.

本発明の焦電センサは、熱型赤外センサとして利用できる。   The pyroelectric sensor of the present invention can be used as a thermal infrared sensor.

実施例１に係る焦電センサを示す一部破断正面図である。It is a partially broken front view which shows the pyroelectric sensor which concerns on Example 1. FIG. 実施例１に係る焦電センサから窓付キャップを除去した上面図である。It is the top view which removed the cap with a window from the pyroelectric sensor which concerns on Example 1. FIG. 導電性ペースト１１の塗布工程の説明図である。It is explanatory drawing of the application | coating process of the electrically conductive paste. 焦電結晶とアンプ基板の固定工程の説明図である。It is explanatory drawing of the fixing process of a pyroelectric crystal and an amplifier board | substrate. スペーサの接着工程の説明図である。It is explanatory drawing of the adhesion process of a spacer. アンプ基板とステムの接着工程の説明図である。It is explanatory drawing of the adhesion process of an amplifier board | substrate and a stem. 配線工程の説明図である。It is explanatory drawing of a wiring process.

符号の説明Explanation of symbols

１ ＴＧＳ系焦電結晶
４ アンプ基板
７ ステム
１１ 導電ペースト
１２ スペーサ
１００ 焦電センサ DESCRIPTION OF SYMBOLS 1 TGS type pyroelectric crystal 4 Amplifier board 7 Stem 11 Conductive paste 12 Spacer 100 Pyroelectric sensor

Claims (3)

電極を形成した焦電結晶を載せたアンプ基板と、ＦＥＴと、抵抗器と、ピンを有するステムとを具備し、前記焦電結晶を一点支持で前記アンプ基板に固定すると共に、スペーサを挟んで前記アンプ基板をステムで支持したことを特徴とする焦電センサ。 An amplifier substrate on which a pyroelectric crystal on which an electrode is formed is mounted, an FET, a resistor, and a stem having a pin are provided. A pyroelectric sensor characterized in that the amplifier substrate is supported by a stem. 前記ＦＥＴおよび／または前記抵抗器が前記アンプ基板上に搭載されていることを特徴とする請求項１に記載の焦電センサ。 The pyroelectric sensor according to claim 1, wherein the FET and / or the resistor is mounted on the amplifier substrate. 前記スペーサが乾燥剤であることを特徴とする請求項１または請求項２に記載の焦電センサ。 The pyroelectric sensor according to claim 1, wherein the spacer is a desiccant.
JP2005205011A 2005-07-14 2005-07-14 Pyroelectctric sensor Pending JP2007024607A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005205011A JP2007024607A (en) 2005-07-14 2005-07-14 Pyroelectctric sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005205011A JP2007024607A (en) 2005-07-14 2005-07-14 Pyroelectctric sensor

Publications (1)

Publication Number Publication Date
JP2007024607A true JP2007024607A (en) 2007-02-01

Family

ID=37785578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005205011A Pending JP2007024607A (en) 2005-07-14 2005-07-14 Pyroelectctric sensor

Country Status (1)

Country Link
JP (1) JP2007024607A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006105837A (en) * 2004-10-07 2006-04-20 Shimadzu Corp Pyroelectric sensor
JP2006200967A (en) * 2005-01-19 2006-08-03 Shimadzu Corp Pyroelectric sensor
JP2016156782A (en) * 2015-02-26 2016-09-01 株式会社島津製作所 Pyroelectric infrared detector

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01270624A (en) * 1988-03-02 1989-10-27 Philips Gloeilampenfab:Nv Pyroelectric type infrared detector and manufacture thereof
JPH034127A (en) * 1989-05-31 1991-01-10 Horiba Ltd Pyroelectric type infrared ray detector
JPH03113149U (en) * 1990-03-03 1991-11-19
JPH0682306A (en) * 1992-09-03 1994-03-22 Murata Mfg Co Ltd Infrared ray detector

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01270624A (en) * 1988-03-02 1989-10-27 Philips Gloeilampenfab:Nv Pyroelectric type infrared detector and manufacture thereof
JPH034127A (en) * 1989-05-31 1991-01-10 Horiba Ltd Pyroelectric type infrared ray detector
JPH03113149U (en) * 1990-03-03 1991-11-19
JPH0682306A (en) * 1992-09-03 1994-03-22 Murata Mfg Co Ltd Infrared ray detector

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006105837A (en) * 2004-10-07 2006-04-20 Shimadzu Corp Pyroelectric sensor
JP4581609B2 (en) * 2004-10-07 2010-11-17 株式会社島津製作所 Pyroelectric sensor
JP2006200967A (en) * 2005-01-19 2006-08-03 Shimadzu Corp Pyroelectric sensor
JP2016156782A (en) * 2015-02-26 2016-09-01 株式会社島津製作所 Pyroelectric infrared detector

Similar Documents

Publication Publication Date Title
JP4107347B2 (en) Infrared sensor and method of manufacturing infrared sensor
JP4762264B2 (en) Camera module and camera module manufacturing method
JP5287906B2 (en) Infrared temperature sensor, electronic device, and method of manufacturing infrared temperature sensor
US9250126B2 (en) Optical sensing element arrangement with integral package
JP2006245246A (en) Solid state imaging apparatus
JP2007024607A (en) Pyroelectctric sensor
CN111711907B (en) Miniature microphone dust keeper and MEMS microphone
JP2014134427A (en) Physical quantity sensor and method for manufacturing the same
JP2010002405A (en) Semiconductor pressure sensor
KR20090004352U (en) Reinforce structure of image sensor for camera module
JP2008032451A (en) Variable capacitance pressure sensor
JP2010261766A (en) Resistance-type humidity sensor and method for manufacturing the same
JP4219876B2 (en) Capacitive humidity sensor and manufacturing method thereof
JP5996328B2 (en) Semiconductor device
JP5333641B2 (en) Infrared temperature sensor, electronic device, and method of manufacturing infrared temperature sensor
WO2014088021A1 (en) Acceleration sensor
JP2013113692A (en) Infrared sensor
TWI674653B (en) Gas sensor package structure
JP2009130236A (en) Piezoelectric device, and electronic apparatus using the same, and automobile
JP4760351B2 (en) Pyroelectric sensor manufacturing method and pyroelectric sensor
JP2010204061A (en) Electronic component and method for fabricating the same
JP2007010445A (en) Pyroelectric sensor
JP7081354B2 (en) Sensor holding board and sensor module
JP6106840B2 (en) PZT device
JP2009016649A (en) Solid-state imaging device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071002

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090915

A131 Notification of reasons for refusal

Effective date: 20100105

Free format text: JAPANESE INTERMEDIATE CODE: A131

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100308

A131 Notification of reasons for refusal

Effective date: 20100803

Free format text: JAPANESE INTERMEDIATE CODE: A131

A02 Decision of refusal

Effective date: 20110705

Free format text: JAPANESE INTERMEDIATE CODE: A02