JP2007010387A - Photovoltaic device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photovoltaic device and its manufacturing method for achieving pattern sharing while maintaining an output level. <P>SOLUTION: A solar battery layer 24 comprising a first electrode layer 11, a semiconductor layer 13, and a second electrode layer 12, is provided with opening domains 25A and 25B with an opening part 17 formable therein. The second electrode layer 12 in a domain corresponding to an outer edge of the opening domain 25B is removed in a groove-like shape to form a second removal domain 16. Further, the second electrode layer 12 within the opening domain 25B is connected to the second electrode layer 12 outside the opening domain 25B via a connection part 14 comprising the second electrode layer 12 remaining around the opening domain 25B. Accordingly, the second electrode layer 12 within the opening domain 25B functions as an electricity generation domain if the opening domain 25B is not punched out. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a photovoltaic device and a manufacturing method thereof, and more particularly to a photovoltaic device having an opening provided through a solar cell layer and a manufacturing method thereof.

  Conventionally, for example, there is a device in which a solar cell is arranged on a display surface provided in a display unit, and at least a part of the display function of the display unit is operated by the obtained power.

  Among these, as a most typical photovoltaic device, there is a wristwatch in which a light receiving surface of a solar cell is arranged instead of the whole dial plate or a part thereof. This type of wristwatch is provided with a light receiving surface of the solar cell where it should be the surface of the dial, so there is no need to provide a light receiving surface other than the display surface, and space for providing the light receiving surface is saved. be able to. In particular, in a small wristwatch, a solar cell having a power generation capability that can sufficiently cover power consumption can be easily incorporated.

  A conventional photovoltaic device 100 used for a wristwatch will be described with reference to FIG. In the photovoltaic device 100, solar cells (cells) 102 </ b> A and 102 </ b> B are placed on a substrate 101 in a divided manner. Display portion 103 on which date and day of the week are displayed is formed in solar cell 102A. The display unit 103 is formed by hollowing out the substrate 101 and the solar cell 102 during the manufacturing process (Patent Document 1).

  Further, a needle hole 109 for providing a short hand or a long hand of a wristwatch is formed by punching the solar cell and the substrate 101 in the same manner as the display unit 103 described above.

  Next, a method for manufacturing the above-described photovoltaic device 100 will be described with reference to FIG.

  Referring to FIG. 9A, first, the first electrode layer 110, the semiconductor layer 111, and the second electrode layer 112 are stacked on the upper surface of the substrate 101 to form the solar cell layer 113.

  Referring to FIG. 9B, next, the second electrode layer 112 is removed in a groove shape so as to surround the region where the display portion 103 shown in FIG. 8 is formed, and a dummy cell 114 is formed. The dummy cell 114 is electrically isolated from the second electrode layer 112 in other regions and does not function as a power generation region.

Referring to FIG. 9C, next, in the region where the dummy cell 114 is formed, the solar cell layer 113 and the substrate 101 are removed by punching to form an opening 115. The opening 115 becomes the needle hole 109 and the display unit 103 in FIG. By forming the dummy cell 114, it is possible to prevent a burr formed of the second electrode layer 112 from being generated by punching. Therefore, the burr can prevent the second electrode layer 112 and the first electrode layer 110 from short-circuiting.
JP 2002-90475 A

  A wristwatch or the like incorporating a solar cell as described above has various designs, and the layout of the display unit 103 and the needle hole 109 differs depending on the model even though the outer shape is the same. Therefore, the dummy cells 114 provided for forming the opening serving as the display portion 103 and the like must also be provided at different locations depending on the model. However, if a predetermined pattern is designed and created for each model having a different layout, there is a problem that the manufacturing cost increases. Therefore, conventionally, dummy cells 114 are formed in a plurality of regions where the display unit 103 and the needle holes 109 are formed in order to share a pattern. As a result, the cost associated with pattern design and creation can be reduced.

  However, when a plurality of dummy cells 114 that do not function as a power generation region are provided, the region that functions as a power generation region becomes narrow, and a problem has arisen that the output level of the photovoltaic device decreases.

  The present invention has been made in view of such problems, and a main object of the present invention is to provide a photovoltaic device capable of sharing a pattern while maintaining an output level, and a method for manufacturing the same. There is.

  The photovoltaic device of the present invention is a photovoltaic device comprising a solar cell layer in which a first electrode layer, a semiconductor layer, and a second electrode layer are laminated, wherein the first electrode layer, the semiconductor layer, and the first layer An opening region in which an opening that penetrates the two electrode layers can be formed is provided in the solar cell layer, and the second electrode layer is formed in a groove shape so as to completely surround the opening region in the second electrode layer. The removed second removal region is provided, and the second electrode layer located inside the opening region and the other regions are connected to each other through the connection portion made of the second electrode layer remaining around the opening region. The second electrode layer is electrically connected, and the first electrode layer in a region corresponding to the connection portion is provided with a first removal region by partially removing the first electrode layer. .

  In the method for producing a photovoltaic device of the present invention, a solar cell layer is formed by laminating one electrode layer, a semiconductor layer, and a second electrode layer, and the first electrode layer, the semiconductor layer, and the second electrode layer are formed. In the method for manufacturing a photovoltaic device, wherein the solar cell layer is provided with an open region in which a through-opening can be formed. The first electrode layer is formed, and a region corresponding to a peripheral portion of the open portion is partially formed Providing a first removed region that has been removed, a step of forming the semiconductor layer and the second electrode layer on the first electrode layer, and an incomplete surrounding of the opening region in the second electrode layer A second removal region in which the second electrode layer is removed in a groove shape is provided in the groove, and the second electrode layer remaining corresponding to the first removal region is connected to the inside of the opening region through the connection portion. The second electrode layer to be connected to the second electrode layer in another region Characterized by comprising the step of.

  According to the present invention, since a plurality of opening regions where the display portion or the opening serving as the needle hole can be formed are provided, the pattern of the solar cell layer is shared, and the positions of the opening serving as the display portion and the needle hole are different. The photovoltaic device can be manufactured. Furthermore, in the present invention, since the solar cell layer inside the opening region functions as a power generation region, the output level of the photovoltaic device is not reduced even if a large number of opening regions are provided in the solar cell layer.

  Furthermore, in the present invention, the second electrode layer, which is a transparent electrode, is provided with a groove-shaped second removal region that completely surrounds the opening region, and the connection portion including the second electrode layer remaining around the opening region is provided. The second electrode layer located inside the opening region is connected to the second electrode layer in another region. Further, by partially removing the first electrode layer, the first electrode layer located below the connection portion of the second electrode layer is isolated from other regions. Therefore, even if the burr generated from the connecting portion of the second electrode layer reaches the first electrode layer by forming the opening by punching the opening region, the portion of the first electrode layer where the burr reaches Since it is isolated from the region, the first electrode layer and the second electrode layer do not short-circuit.

  The configuration of the photovoltaic device 10 will be described with reference to FIGS. FIG. 1 is a diagram illustrating the overall configuration of the photovoltaic device 10, and FIGS. 2 to 4 are diagrams illustrating details of the opening region 25.

  In this embodiment, a photovoltaic device for a wristwatch will be described as an example, but a variety of products are used. For example, the photovoltaic device 10 of the present embodiment can be applied to electronic devices such as a calculator, a telephone, and a portable device.

  First, the overall configuration of the photovoltaic device 10 will be described with reference to FIG. 1A is a plan view of the photovoltaic device 10, and FIG. 1B is a cross-sectional view taken along the line B-B 'of FIG. 1A.

  In the photovoltaic device 10 of this embodiment, the solar cell layer 24 is formed on the surface of the substrate 18 by laminating the first electrode layer 11, the semiconductor layer 13, and the second electrode layer 12 in this order. Further, the solar cell layer 24 is formed with a plurality of opening regions 25 that are regions where the openings 17 penetrating the photovoltaic device 10 are formed.

  Referring to FIG. 1A, the second electrode layer 12 is composed of a plurality of second electrode layers 12A to 12D arranged in a divided manner. Each of the second electrode layers 12 </ b> A to 12 </ b> D has a fan shape with a central angle of approximately 90 °, and is arranged so as to be circular as a whole. Each second electrode layer 12 is electrically connected.

  The connection terminals 20 </ b> A and 20 </ b> B are electrically connected to external connection electrodes (not shown) formed on the back surface of the substrate 18 through through holes (not shown) provided in the substrate 18. Here, an external connection electrode may be formed on the surface of the substrate 18. The connection terminal 20A is electrically connected to the second electrode layer 12A. The connection terminal 20B is connected to the first electrode layer 11 located below the second electrode layer 20D. The connection terminals 20 </ b> A and 20 </ b> B have a role of transmitting electrical energy obtained from the solar cell layer 24 to the outside.

  A cross-sectional structure of the photovoltaic device 10 will be described with reference to FIG.

  The substrate 18 can be formed of metal, resin, glass or the like, but metal or resin is preferable in consideration of workability. The thickness of the substrate 18 is, for example, about 0.15 mm.

  The first electrode layer 11 formed on the surface of the substrate 18 is a metal film having a thickness of about 0.1 to 1.0 μm. Examples of the material of the first electrode layer 11 include tungsten, aluminum, titanium, nickel, or copper. However, a transparent electrode such as ITO or ITZ may be adopted as the material of the first electrode layer 11.

  The semiconductor layer 13 is laminated over the entire substrate 18 so as to cover the first electrode layer 11, and the thickness thereof is about 0.3 μm to 1.0 μm. The semiconductor layer 13 is formed by laminating amorphous silicon, amorphous silicon carbide, amorphous silicon germanium, or the like at p / n or p / i / n.

  The second electrode layer 12 is formed on the upper surface of the semiconductor layer 13. The second electrode layer 12 is a transparent electrode layer made of zinc oxide (ZnO), indium tin oxide (ITO), tin oxide (SnO 2), or the like. In this embodiment, indium tin oxide (ITO) is employed as the second electrode layer 12, and the film thickness is about 30 nm to 300 nm.

  The opening region 25 is a region where the opening 17 provided through the solar cell layer 24 and the substrate 18 can be formed. In the opening region 25, the second electrode layer 12 and the first electrode layer 11 therebelow are partially removed. As a result, even if the opening 17 is provided in the opening region 25 by punching, it is possible to prevent the first electrode layer 11 and the second electrode layer 12 from being short-circuited by burrs generated by this processing. Moreover, since the 2nd electrode layer 12 located in the inside of the opening area | region 25 is following the 2nd electrode layer 12 of another area | region, it functions as an electric power generation area | region. Details of the opening region 25 will be described later with reference to FIGS.

  Referring to FIG. 1A, two open regions 25A and 25B are provided on the surface of the photovoltaic device 10. The opening region 25A is provided in the second electrode layer 12A, and the opening region 25B is provided in the second electrode layer 12B. The opening 17 is formed by removing the solar cell layer 24 and the substrate 18 in the opening region 25A. In the case of a wristwatch, the opening 17 is used as a display unit or a needle hole for displaying a date or day of the week. And the opening part 17 is not formed in the opening area | region 25B, but the 2nd electrode layer 12B located inside the opening area | region 25B is functioning as an electric power generation area | region.

  Depending on the model, the opening 17 may be provided only in the opening region 25B, or the opening 17 may be provided in both the opening regions 25A and 25B. In addition, although two opening regions 25A and 25B are provided here, a large number of three or more opening regions 25 may be provided. Furthermore, the planar shape of the opening region 25 and the opening 17 may be other than a rectangle. That is, the opening region 25 and the opening 17 having other planar shapes such as a circle, a triangle, and an ellipse may be formed.

  In this embodiment, a plurality of opening regions 25 functioning as power generation regions are provided, and the opening portions 17 are provided by removing the opening regions 25 according to the model. Therefore, the output level of the photovoltaic device 10 can be maintained and the pattern of the second electrode layer 12 can be shared. That is, by forming a large number of opening regions 25 that are regions where the openings 17 can be formed, a single solar cell layer 24 pattern can be used for various types of photovoltaic devices having different positions of the openings 17. can do. However, if the second electrode layer 12 in the opening region 25 is used as a dummy cell in consideration of the generation of burrs when the opening 17 is formed by punching, the amount of power obtained from the photovoltaic device 10 is reduced. End up. In particular, in the case where a large number of opening regions 25 are provided as in the present embodiment, the area occupied by the opening regions 25 becomes large, so that the power consumption is significantly reduced. Therefore, in this embodiment, the second electrode layer 12 inside the opening region 25 is made continuous with the second electrode layer 12 in other regions. Therefore, since the second electrode layer 12 inside the opening region 25 also functions as a power generation region, even when a large number of opening regions 25 are formed, the power obtained from the photovoltaic device 10 does not decrease.

  Details of the above-described opening region 25 will be described with reference to FIGS.

  With reference to FIG. 2, the structure of the opening region 25B where the opening 17 is not provided will be described first. 2A is a plan view of the opening region 25B, FIG. 2B is a cross-sectional view taken along line BB ′ of FIG. 2A, and FIG. 2C is FIG. It is sectional drawing in CC 'line | wire of ().

  2A and 2B, in the opening region 25B, a first removal region 15 is provided in the first electrode layer 11, and a second removal region is provided in the second electrode layer 12. 16 is formed.

  The second removal region 16 is a region where the second electrode layer 12 is removed in a groove shape so as to completely surround the outer edge of the opening region 25B. Here, two second removal regions 16 are formed in a U shape along the outer edge of the rectangular opening region 25B. A portion where the second electrode layer 12 is not removed in the peripheral portion of the opening region 25 </ b> B is the connection portion 14. The second electrode layer 12 inside the opening region 25B is electrically connected to the second electrode layer 12 located outside the opening region 25B via the connection portion 14. Accordingly, the second electrode layer 12 inside the opening region 25B functions as a power generation region. Here, the two connection portions 14 are provided in the peripheral portion of the opening region 25B, but at least one connection portion 14 may be provided.

  The first removal region 15 is a region provided so that the first electrode layer 11 in a region corresponding to the connection portion 14 of the second electrode layer 12 is isolated. Here, the first removal region 15 is formed by removing the first electrode layer 11 in a ring shape so as to completely surround the first electrode layer 11 positioned below the connection portion 14.

  Referring to FIG. 2C, by providing the first removal region 15, even if burrs are generated from the connection portion 14 by punching, the first electrode layer 11 and the second electrode layer 12 are caused by the burrs. Short circuit can be prevented. Specifically, when the region of the opening region 25B is punched out, the burr 22 is generated at the portion where the connecting portion 14 is located. Even if the burr 22 extending from the connection portion 14 of the second electrode layer 12 reaches the first electrode layer 11, the first electrode layer 11 at the portion to which the burr 22 is connected is separated by the first removal region 15. Isolated with area. Therefore, even if the burr 22 is generated from the connection portion 14, the first electrode layer 11 and the second electrode layer 12 do not short-circuit.

  With reference to FIG. 3, the structure of the opening area | region 25B of another form is demonstrated. 3A is a plan view of the opening region 25B, FIG. 3B is a cross-sectional view taken along line BB ′ of FIG. 3A, and FIG. 3C is FIG. It is sectional drawing in CC 'line | wire of ().

  Referring to these drawings, here, the first removal region 15 is formed by completely removing the first electrode layer 11 located below the connection portion 14 of the second electrode layer 12. . Even with such a configuration, it is possible to prevent a short circuit due to burrs generated in the punching process. That is, referring to FIG. 3C, even if the burr 22 extends downward from the connection portion 14 by punching the opening region 25B, the first electrode layer 11 is formed below the connection portion 14. not exist. Therefore, even if the burr 22 is generated, the first electrode layer 11 and the second electrode layer 12 do not short-circuit.

  Next, the configuration of the opening 17 will be described with reference to FIG. 4A is a plan view showing the opening 17, and FIG. 4B is a cross-sectional view taken along line B-B 'of FIG. 4A.

  With reference to FIG. 4A and FIG. 4B, the opening 17 is formed by punching out the solar cell layer 24 and the substrate 18 where the opening region 25A is provided. Here, punching is performed from the solar cell layer 24 side (from the top to the bottom on the paper surface) using a press or the like. As described above, except for the connection portion 14, the second electrode layer 12 located at the outer edge of the opening portion 17 is removed in a groove shape to form the second removal region 16. Therefore, in the portion where the second removal region 16 is formed, burrs made of the second electrode layer 12 do not occur even if punching is performed.

  With reference to FIG. 4 (B), the burr | flash 22 generate | occur | produces along the side surface of the opening part 17 by stamping in the location in which the connection part 14 which consists of the 2nd electrode layer 12 was provided. However, the first electrode layer 11 located below the connection portion 14 is isolated from other regions by the first removal region 15. Therefore, even if the burr 22 reaches the first electrode layer 11 located below the connection portion 14, the first electrode layer 11 and the second electrode layer 12 do not short-circuit.

  Next, with reference to FIGS. 5 to 7, a method for manufacturing the photovoltaic device 10 will be described.

  Referring to FIG. 5, first, the first electrode layer 11 is formed on the upper surface of the substrate 18. As the substrate 18, a rectangular flexible film made of a resin such as polyimide or a metal plate such as stainless steel having an insulating layer formed on the surface can be used.

  In this step, the four first electrode layers 11A to 11D are divided and arranged. Each of the first electrode layers 11A to 11D has a fan shape with a central angle of approximately 90 °, and these are arranged so as to be circular as a whole with a predetermined interval therebetween. Furthermore, each of the first electrode layers 11 </ b> A to 11 </ b> C has connection portions 11 </ b> Ae, 11 </ b> Be, and 11 </ b> Ce extending outward from the adjacent first electrode layer 11. Here, the first electrode layers 11A to 11D have a thickness of about 0.1 to 1.0 μm and are made of a metal film such as tungsten, aluminum, titanium, nickel, copper, or the like. A transparent electrode such as ITO or ITZ may be used as the material of the first electrode layer 11.

  In the first electrode layer 11A, an opening region 25A, which is a region where an opening can be formed, is defined. The first removal region 15 is formed by removing the first electrode layer 11A in a groove shape so as to surround one region at the outer edge of the opening region 25A. Similarly to the first electrode layer 11A, an opening region 25B is defined on the surface of the first electrode layer 11B, and a first removal region 15 is formed. The first removal region 15 is formed by partially removing the first electrode layer 11 by laser line processing using a YAG laser.

  By providing the first removal region 15 in the first electrode layer 11 as described above, it becomes possible to electrically isolate one region of the first electrode layer 11. Accordingly, it is possible to prevent a short circuit between the electrode layers due to burrs generated in the punching process in a later process. Details of this matter will be described later.

  In addition, the first electrode layers 11A and 11D are not formed in the through portions 23A and 23B, which are regions where the connection terminal 20A and 20B (see FIG. 1) are formed. By doing in this way, the short circuit between electrode layers can be prevented in the process of forming a through hole in order to form the connection terminal 20A and the like.

  Next, referring to FIG. 6, the semiconductor layer 13 and the second electrode layer 12 are stacked on the upper surface of the substrate 18. 6A is a plan view of this process, FIG. 6B is a cross-sectional view taken along line BB ′ in FIG. 6A, and FIG. 6C is an enlarged view of the opening region 25A. FIG.

  Referring to FIGS. 6A and 6B, a semiconductor layer 13 (thickness) in which amorphous silicon, amorphous silicon carbide, amorphous silicon germanium, or the like is stacked on pn or pin on the first electrode layer 11. About 0.3 to 1.0 μm).

  Thereafter, the second electrode layer 12 is formed on substantially the entire surface of the semiconductor layer 13. The second electrode layer 12 is made of a transparent conductive film (thickness: about 0.3 to 1.0 μm) such as zinc oxide (ZnO), indium oxide (ITO), or tin oxide (SnO 2). Further, after partially covering the upper surface of the second electrode layer 12 with a protective film (not shown), the entire surface of the second electrode layer 12 is irradiated with excimer laser (KrF laser light) from above. By this step, the second electrode layer 12 that is not covered by a protective film (not shown) is removed, and the second electrode layers 12A to 12D are formed. The planar shape of the second electrode layers 12A to 12D is substantially the same as that of the first electrode layers 11A to 11D, and each has a sector shape with a central angle of approximately 90 °. Furthermore, the second removal region 16 described later is also formed by this step.

  Furthermore, the upper second electrode layer 12 and the lower first electrode layer 11 are connected in connection regions 19A to 19C. Specifically, YAG laser light (wavelength: 1.06 μm) is irradiated from above the second electrode layer 12 located on the connection portions 11Ae, 11Be, 11Ce (see FIG. 5A) of the first electrode layer 11. To do. The connection parts 11Ae, 11Be, 11Ce of the first electrode layer 11 and the second electrode layer 12 thereabove are melted by the YAG laser light and both are welded. In the connection region 19A, the connection portion 11Ae of the first electrode layer 11A is connected to the second electrode layer 12B. In the connection region 19B, the connection portion 11Be of the first electrode layer 11B is connected to the second electrode layer 12C. In the connection region 19C, the connection portion 11Ce of the first electrode layer 11C is connected to the second electrode layer 12D.

  Referring to FIG. 6C, in this step, the second removal region 16 is formed by removing the second electrode layer 12 in a groove shape along the outer edge of the opening region 25A. Specifically, two second removal regions 16 are formed in a U shape along the outer edge of the rectangular opening region 25A.

  The second removal region 16 is formed so as to incompletely surround the opening region 25A, and the connection portion 14 made of the remaining second electrode layer 12 is formed around the opening region 25A. By forming the connection portion 14, the second electrode layer 12 positioned inside the opening region 25A is connected to the second electrode layer 12 positioned outside the opening region 25A. Therefore, when the opening region 25A is not removed by punching, the second electrode layer 12 located inside the opening region 25A functions as a power generation region.

  The connection portion 14 is formed corresponding to the position of the first removal region 15 formed in the lower first electrode layer 11. That is, in plan view, the connection portion 14 of the second electrode layer 12 is formed in a region inside the first removal region 15 formed in the first electrode layer 11. Further, the number of connection portions 14 formed in this step may be other than two, and at least one connection portion 14 may be formed.

  The above-described configuration is the same for the opening region 25B formed in the second electrode layer 12B.

  Next, referring to FIG. 7, the opening region 25A is punched to form the opening 17. 7A is a plan view of this process, FIG. 7B is a cross-sectional view taken along line BB ′ of FIG. 7A, and FIG. 7C is an enlarged view of the opening region 25A. FIG.

  In this step, the opening 17 is formed by punching out the solar cell layer 24 and the substrate 18 in the region of the opening region 25A. Here, the opening area 25 </ b> A is punched downward from above by using a press machine or the like, and the solar cell layer 24 and the substrate 18 are partially removed to form the opening 17. Further, the solar cell layer 24 and the substrate 18 in the opening region 25A may be removed by laser processing.

  With reference to FIGS. 7B and 7C, as described above, in this embodiment, the first removal region 15 and the second removal region 16 are provided in the opening region 25A. Is prevented. Specifically, even if the burr 22 generated by the punching process extends from the connecting portion 14 of the second electrode layer 12 to the first electrode layer 11, the portion of the first electrode layer 11 in contact with the burr 22 is surrounded by Isolated from. Therefore, even if burrs 22 are generated by the punching process in this step, a short circuit between the first electrode layer 11 and the second electrode layer 12 does not occur.

  Here, the opening 17 is provided only in the opening region 25A, and the opening 17 is not provided in the opening region 25B. As a result, it is possible to cope with a model in which the opening 17 serving as a display portion is required only in the opening region 25A. Further, in the case of a model in which the opening 17 serving as a display part or a needle hole is required only in the opening area 25B, the opening 17 is provided in the opening area 25B, and the opening 17 is not provided in the opening area 25A. Furthermore, the opening 17 may be formed in both of the opening regions 25A and 25B as necessary, or the opening 17 may not be provided in both.

  In this step, through holes 21A and 21B penetrating the solar cell layer 24 and the substrate 18 are formed by performing laser processing. The opening diameters of the through holes 21A and 21B are about 100 μm.

After this process is completed, a conductive material such as silver paste is printed in the through holes 21A and 21B to provide connection terminals 20A and 20B (see FIG. 1). Further, the substrate 18 is punched in a region indicated by a dotted line in FIG. Through these steps, the photovoltaic device 10 as shown in FIG. 1 is formed.

It is a figure which shows the photovoltaic apparatus of this invention, (A) is a top view, (B) is sectional drawing. It is a figure which shows the photovoltaic apparatus of this invention, (A) is a top view, (B) is sectional drawing, (C) is sectional drawing. It is a figure which shows the photovoltaic apparatus of this invention, (A) is a top view, (B) is sectional drawing, (C) is sectional drawing. It is a figure which shows the photovoltaic apparatus of this invention, (A) is a top view, (B) is sectional drawing. It is a figure which shows the manufacturing method of the photovoltaic apparatus of this invention, (A) is a top view, (B) is sectional drawing. It is a figure which shows the manufacturing method of the photovoltaic apparatus of this invention, (A) is a top view, (B) is sectional drawing, (C) is a top view. It is a figure which shows the manufacturing method of the photovoltaic apparatus of this invention, (A) is a top view, (B) is sectional drawing, (C) is a top view. It is a top view which shows the conventional photovoltaic apparatus. It is a figure which shows the manufacturing method of the conventional photovoltaic apparatus, (A)-(C) is a top view.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Photovoltaic device 11 1st electrode layer 12 2nd electrode layer 13 Semiconductor layer 14 Connection part 15 1st removal area 16 2nd removal area 17 Opening part 18 Substrate 19A, 19B, 19C Connection area 20A, 20B Connection terminal 21A, 21B Through hole 22 Burr 23A, 23B Through part 24 Solar cell layer 25A, 25B Opening area

Claims (8)

A photovoltaic device comprising a solar cell layer in which a first electrode layer, a semiconductor layer and a second electrode layer are laminated,
An opening region in which an opening penetrating the first electrode layer, the semiconductor layer, and the second electrode layer can be formed is provided in the solar cell layer;
The second electrode layer is provided with a second removal region in which the second electrode layer is removed in a groove shape so as to imperfectly surround the opening region, and the second electrode layer remaining around the opening region The second electrode layer located inside the opening region and the second electrode layer in another region are electrically connected via a connection portion made of:
A photovoltaic device, wherein the first electrode layer in a region corresponding to the connection portion is provided with a first removal region by partially removing the first electrode layer. A plurality of the opening regions are provided in the solar cell layer,
The photovoltaic device according to claim 1, wherein the opening is formed in at least one of the opening regions.   The photovoltaic device according to claim 1, wherein the opening is used as a display unit or a needle hole.   The photovoltaic device according to claim 1, wherein the second electrode layer is made of a material that transmits sunlight.   The photovoltaic device according to claim 1, wherein the opening is formed by punching the opening region. A solar cell layer is formed by laminating a first electrode layer, a semiconductor layer, and a second electrode layer, and an opening region in which an opening penetrating the first electrode layer, the semiconductor layer, and the second electrode layer can be formed In the method of manufacturing a photovoltaic device provided in the solar cell layer,
Forming the first electrode layer and providing a first removal region in which a region corresponding to a peripheral portion of the opening is partially removed;
Forming the semiconductor layer and the second electrode layer on the first electrode layer;
The second electrode layer is provided with a second removal region in which the second electrode layer is removed in a groove shape so as to imperfectly surround the opening region, and the second electrode remaining corresponding to the first removal region And a step of connecting the second electrode layer located inside the opening region and the second electrode layer in another region through a connecting portion made of a layer. Photovoltaic device manufacturing method. Providing a plurality of open areas in the solar cell layer;
The method for manufacturing a photovoltaic device according to claim 6, wherein the opening is provided in at least one of the opening regions. The method for manufacturing a photovoltaic device according to claim 6, wherein the opening is formed by removing the opening region by punching.

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